MT16KSF51264HZ-1G4D1

2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM Features 1.35V DDR3 SDRAM SODIMM MT16KSF25664HZ – 2GB MT16KSF51264HZ – 4GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C F) • DDR3L functionality and operations supported as defined in the component data sheet • 204-pin, small outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 • 2GB (256 Meg x 64), 4GB (512 Meg x 64) • VDD = 1.35V (1.283V to 1.45V) • VDD = 1.5V (1.425V to 1.575V) • Backward compatible to V DD = +1.5V ±0.075V • VDDSPD = +3.0V to +3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Dual rank • On-board I2C temperature sensor with integrated serial presence-detect (SPD) EEPROM • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) • Selectable BC4 or BL8 on-the-fly (OTF) • Gold edge contacts • Halogen-free • Fly-by topology • Terminated control, command, and address bus Module height: 30.0mm (1.18in) Options Marking • Operating temperature – Commercial (0°C ≤ T A ≤ +70°C) • Package – 240-pin DIMM (halogen-free) • Frequency/CAS latency – 1.25ns @ CL = 11 (DDR3-1600) – 1.5ns @ CL = 9 (DDR3-1333) – 1.87ns @ CL = 7 (DDR3-1066) – 1.87ns @ CL = 8 (DDR3-1066)1 – 2.5ns @ CL = 5 (DDR3-800)1 – 2.5ns @ CL = 6 (DDR3-800)1 Note: None Z -1G6 -1G4 -1G1 -1G0 -80C -80B 1. Not recommended for new designs. Table 1: Key Timing Parameters Data Rate (MT/s) tRCD tRP tRC Speed Grade Industry Nomenclature CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 – 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 – – – 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 – – – 1066 – 800 667 15 15 52.5 -80B PC3-6400 – – – – – 800 667 15 15 52.5 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN CL = 11 CL = 10 Products and specifications discussed herein are subject to change by Micron without notice. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM Features Table 2: Addressing Parameter Refresh count Row address 2GB 4GB 8K 8K 16K A[13:0] 32K A[14:0] Device bank address 8 BA[2:0] 8 BA[2:0] Device configuration 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) Column address 1K A[9:0] 1K A[9:0] Module rank address 2 S#[1:0] 2 S#[1:0] Table 3: Part Numbers and Timing Parameters – 2GB Modules Base device: MT41K128M8HX,1 1Gb 1.35V DDR3 SDRAM Module Part Number2 Density Configuration Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) 1.25ns/1600 MT/s 11-11-11 MT16KSF25664HZ-1G6__ 2GB 256 Meg x 64 12.8 GB/s MT16KSF25664HZ-1G4__ 2GB 256 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT16KSF25664HZ-1G1__ 2GB 256 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 MT16KSF25664HZ-1G0__ 2GB 256 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 8-8-8 Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) 1.25ns/1600 MT/s 11-11-11 Table 4: Part Numbers and Timing Parameters – 4GB Modules Base device: MT41K256M8HX,1 2Gb 1.35V DDR3 SDRAM Module Part Number2 Density Configuration MT16KSF51264HZ-1G6__ 4GB 512 Meg x 64 12.8 GB/s MT16KSF51264HZ-1G4__ 4GB 512 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT16KSF51264HZ-1G1__ 4GB 512 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 MT16KSF51264HZ-1G0__ 4GB 512 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 8-8-8 Notes: 1. The data sheet for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16KSF51264HZ-1G1D1. PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM Pin Assignments Pin Assignments Table 5: Pin Assignments 204-Pin DDR3 SODIMM Front 204-Pin DDR3 SODIMM Back Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 VREFDQ 53 DQ19 105 VDD 157 DQ42 2 VSS 54 VSS 106 VDD 158 DQ46 3 VSS 55 VSS 107 A10 159 DQ43 4 DQ4 56 DQ28 108 BA1 160 DQ47 5 DQ0 57 DQ24 109 BA0 161 VSS 6 DQ5 58 DQ29 110 RAS# 162 VSS 7 DQ1 59 DQ25 111 VDD 163 DQ48 8 VSS 60 VSS 112 VDD 164 DQ52 9 VSS 61 VSS 113 WE# 165 DQ49 10 DQS0# 62 DQ3# 114 S0# 166 DQ53 11 DM0 63 DM3 115 CAS# 167 VSS 12 DQS0 64 DQ3 116 ODT0 168 VSS 13 VSS 65 VSS 117 VDD 169 DQS6# 14 VSS 66 VSS 118 VDD 170 DM6 15 DQ2 67 DQ26 119 A13 171 DQS6 16 DQ6 68 DQ30 120 ODT1 172 VSS 17 DQ3 69 DQ27 121 S1# 173 VSS 18 DQ7 70 DQ31 122 NC 174 DQ54 19 VSS 71 VSS 123 VDD 175 DQ50 20 VSS 72 VSS 124 VDD 176 DQ55 21 DQ8 73 CKE0 125 NC 177 DQ51 22 DQ12 74 CKE1 126 VREFCA 178 VSS 23 DQ9 75 VDD 127 VSS 179 VSS 24 DQ13 76 VDD 128 VSS 180 DQ60 25 VSS 77 NC 129 DQ32 181 DQ56 26 VSS 78 NF 130 DQ36 182 DQ61 27 DQS1# 79 BA2 131 DQ33 183 DQ57 28 DM1 80 NF/A14 132 DQ37 184 VSS 29 DQS1 81 VDD 133 VSS 185 VSS 30 RESET# 82 VDD 134 VSS 186 DQS7# 31 VSS 83 A12 135 DQS4# 187 DM7 32 VSS 84 A11 136 DM4 188 DQS7 33 DQ10 85 A9 137 DQS4 189 VSS 34 DQ14 86 A7 138 VSS 190 VSS 35 DQ11 87 VDD 139 VSS 191 DQ58 36 DQ15 88 VDD 140 DQ38 192 DQ62 37 VSS 89 A8 141 DQ34 193 DQ59 38 VSS 90 A6 142 DQ39 194 DQ63 39 DQ16 91 A5 143 DQ35 195 VSS 40 DQ20 92 A4 144 VSS 196 VSS 41 DQ17 93 VDD 145 VSS 197 SA0 42 DQ21 94 VDD 146 DQ44 198 EVENT# 43 VSS 95 A3 147 DQ40 199 VDDSPD 44 VSS 96 A2 148 DQ45 200 SDA 45 DQS2# 97 A1 149 DQ41 201 SA1 46 DM2 98 A0 150 VSS 202 SCL 47 DQS2 99 VDD 151 VSS 203 VTT 48 VSS 100 VDD 152 DQS5# 204 VTT 49 VSS 101 CK0 153 DM5 – – 50 DQ22 102 CK1 154 DQS5 – – 51 DQ18 103 CK0# 155 VSS – – 52 DQ23 104 CK1# 156 VSS – – PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM Pin Descriptions Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR3 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 6: Pin Descriptions Symbol Type Description Ax Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. See the Pin Assignments table for density-specific addressing information. BAx Input Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. CKx, CKx# Input Clock: Differential clock inputs. All control, command, and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. CKEx Input Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. DMx Input Data mask (x8 devices only): DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH, along with that input data, during a write access. Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins. ODTx Input On-die termination: Enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command. Par_In Input Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered. RESET# Input (LVCMOS) Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as though a normal power-up was executed. Sx# Input Chip select: Enables (registered LOW) and disables (registered HIGH) the command decoder. SAx Input Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address range on the I2C bus. SCL Input Serial clock for temperature sensor/SPD EEPROM: Used to synchronize communication to and from the temperature sensor/SPD EEPROM on the I2C bus. CBx I/O Check bits: Used for system error detection and correction. DQx I/O Data input/output: Bidirectional data bus. DQSx, DQSx# I/O Data strobe: Differential data strobes. Output with read data; edge-aligned with read data; input with write data; center-aligned with write data. PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM Pin Descriptions Table 6: Pin Descriptions (Continued) Symbol Type SDA I/O Description Serial data: Used to transfer addresses and data into and out of the temperature sensor/SPD EEPROM on the I2C bus. TDQSx, TDQSx# Output Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD MODE command to the extended mode register (EMR). When TDQS is enabled, DM is disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no function. Err_Out# Output Parity error output: Parity error found on the command and address bus. (open drain) EVENT# Output Temperature event: The EVENT# pin is asserted by the temperature sensor when crit(open drain) ical temperature thresholds have been exceeded. VDD Supply Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The component VDD and VDDQ are connected to the module VDD. VDDSPD Supply Temperature sensor/SPD EEPROM power supply: 3.0–3.6V. VREFCA Supply Reference voltage: Control, command, and address VDD/2. VREFDQ Supply Reference voltage: DQ, DM VDD/2. VSS Supply Ground. VTT Supply Termination voltage: Used for control, command, and address VDD/2. NC – No connect: These pins are not connected on the module. NF – No function: These pins are connected within the module, but provide no functionality. PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM DQ Map DQ Map Table 7: Component-to-Module DQ Map (Front) Component Reference Number Component DQ U1 U5 U7 U9 PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN Module DQ Module Pin Number Component Reference Number Component DQ Module DQ Module Pin Number 0 2 15 U2 0 18 51 1 5 6 1 21 42 2 3 17 2 19 53 3 0 5 3 16 39 4 6 16 4 22 50 5 4 4 5 20 40 6 7 18 6 23 52 7 1 7 7 17 41 0 42 157 0 58 191 1 45 148 1 61 182 2 43 159 2 59 193 3 40 147 3 56 181 4 46 158 4 62 192 5 44 146 5 60 180 6 47 160 6 63 194 7 41 149 7 57 183 0 13 24 0 26 67 1 10 33 1 29 58 2 8 21 2 27 69 3 11 35 3 24 57 4 9 23 4 30 68 5 15 36 5 28 56 6 12 22 6 31 70 7 14 34 7 25 59 0 34 141 0 53 166 1 37 132 1 50 175 2 35 143 2 48 163 3 32 129 3 51 177 4 38 140 4 49 165 5 36 130 5 55 176 6 39 142 6 52 164 7 33 131 7 54 174 U6 U8 U10 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM DQ Map Table 8: Component-to-Module DQ Map (Back) Component Reference Number Component DQ U11 U15 U17 U19 PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN Module DQ Module Pin Number Component Reference Number Component DQ Module DQ Module Pin Number 0 61 182 U12 0 45 148 1 58 191 1 42 157 2 56 181 2 40 147 3 59 193 3 43 159 4 57 183 4 41 149 5 63 194 5 47 160 6 60 180 6 44 146 7 62 192 7 46 158 0 21 42 0 5 6 1 18 51 1 2 15 2 16 39 2 0 5 3 19 53 3 3 17 4 17 41 4 1 7 5 23 52 5 7 18 6 20 40 6 4 4 7 22 50 0 50 175 1 53 2 U16 7 6 16 0 37 132 166 1 34 141 51 177 2 32 129 3 48 163 3 35 143 4 54 174 4 33 131 5 52 164 5 39 142 6 55 176 6 36 130 7 49 165 7 38 140 0 29 58 0 10 33 1 26 67 1 13 24 2 24 57 2 11 35 3 27 69 3 8 21 4 25 59 4 14 34 5 31 70 5 12 22 6 28 56 6 15 36 7 30 68 7 9 23 U18 U20 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM Functional Block Diagram Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0# DQS0 DM0 DQS4# DQS4 DM4 DM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1# DQS1 DM1 VSS DQ DQ DQ DQ DQ DQ DQ DQ ZQ DM CS# DQ DQ DQ DQ DQ DQ DQ DQ DQ DM DQS# DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 U16 ZQ DQS5# DQS5 DM5 VSS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 VSS DQ DQ DQ DQ DQ DQ DQ DQ ZQ CS# DQ DQS# DM CS# DQ DQ DQ DQ DQ DQ DQ DQ U7 DQ DQS6# DQS6 DM6 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 VSS DQ DQ DQ DQ DQ DQ DQ DQ ZQ DQS# DM CS# DQ DQ DQ DQ DQ DQ DQ DQ U2 DQ DM DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 VSS DQ DQ DQ DQ DQ DQ DQ DQ ZQ CS# DQ DQS# DM CS# DQ DQ DQ DQ DQ DQ DQ DQ U19 VSS DQS7# DQS7 DM7 DQ VSS DQS# U18 CS# DQ DQS# DM DQ DQ DQ DQ DQ DQ DQ DQ CS# DQ DQS# U5 CS# DQ DQS# DM DQ DQ DQ DQ DQ DQ DQ DQ U17 CS# DQ DQS# U10 ZQ VSS DM DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 ZQ DQ ZQ DQ DQ DQ DQ DQ DQ DQ DQ ZQ DQS# U8 CS# VSS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 VSS DM DQ DQ DQ DQ DQ DQ DQ DQ U12 DM ZQ DQS# ZQ DQ DQ DQ DQ DQ DQ DQ DQ ZQ DQS# U15 DQ VSS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 U20 CS# U9 DM VSS CS# DQ VSS DQ DQ DQ DQ DQ DQ DQ DQ ZQ DQS# ZQ DM DQS3# DQS3 DM3 DQS# U1 DM DQS2# DQS2 DM2 CS# DQ VSS DQ DQ DQ DQ DQ DQ DQ DQ ZQ CS# DQ DQS# U11 DM DQ DQ DQ DQ DQ DQ DQ DQ CS# DQ DQS# U6 ZQ VSS VSS Rank 0 = U1, U2, U7, U9, U11, U12, U17, U19 Rank 1 = U5, U6, U8, U10, U15, U16, U18, U20 BA[2:0] A[14/13:0] RAS# CAS# WE# CKE0 CKE1 ODT0 ODT1 RESET# BA[2:0]: DDR3 SDRAM A[14/13:0] DDR3 SDRAM RAS#: DDR3 SDRAM CAS#: DDR3 SDRAM SCL EVT A0 WE#: DDR3 SDRAM CKE0: Rank 0 CKE1: Rank 1 ODT0: Rank 0 ODT1: Rank 1 EVENT# VDDSPD RST#: DDR3 SDRAM S#[1:0] CK CK# Note: PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN DDR3 SDRAM SDA A1 A2 SA0 SA1 Clock, control, command, and address line terminations: CKE[1:0], A[14/13:0], RAS#, CAS#, WE#, ODT[1:0], BA[2:0], U3 Temperature sensor/ SPD EEPROM CK0 CK0# Rank 0 CK1 CK1# Rank 1 VSS Temperature sensor/SPD EEPROM VDD DDR3 SDRAM VTT Control, command, and address termination VREFCA DDR3 SDRAM VREFDQ DDR3 SDRAM VSS DDR3 SDRAM VTT DDR3 SDRAM VDD 1. The ZQ ball on each DDR3 component is connected to an external 240Ω ±1% resistor that is tied to ground. It is used for the calibration of the component’s ODT and output driver. 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM General Description General Description DDR3 SDRAM modules are high-speed, CMOS dynamic random access memory modules that use internally configured 8-bank DDR3 SDRAM devices. DDR3 SDRAM modules use DDR architecture to achieve high-speed operation. DDR3 architecture is essentially an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM module effectively consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. DDR3 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals. Fly-By Topology DDR3 modules use faster clock speeds than earlier DDR technologies, making signal quality more important than ever. For improved signal quality, the clock, control, command, and address buses have been routed in a fly-by topology, where each clock, control, command, and address pin on each DRAM is connected to a single trace and terminated (rather than a tree structure, where the termination is off the module near the connector). Inherent to fly-by topology, the timing skew between the clock and DQS signals can be easily accounted for by using the write-leveling feature of DDR3. Serial Presence-Detect EEPROM Operation DDR3 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to comply with JEDEC standard JC-45, "Appendix X: Serial Presence Detect (SPD) for DDR3 SDRAM Modules." These bytes identify module-specific timing parameters, configuration information, and physical attributes. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations between the master (system logic) and the slave EEPROM device occur via a standard I2C bus using the DIMM’s SCL (clock) SDA (data), and SA (address) pins. Write protect (WP) is connected to V SS, permanently disabling hardware write protection. For further information refer to Micron technical note TN-04-42, "Memory Module Serial Presence-Detect." PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM Electrical Specifications Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each device's data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 9: Absolute Maximum Ratings Symbol Parameter Min Max Units VDD VDD supply voltage relative to VSS –0.4 1.975 V VIN, VOUT Voltage on any pin relative to VSS –0.4 1.975 V Table 10: Operating Conditions Symbol VDD Parameter Min Nom Max Units VDD supply voltage 1.283 1.35 1.45 V 1.425 1.5 1.575 V VREFCA(DC) Input reference voltage command/address bus 0.49 × VDD 0.5 × VDD 0.51 × VDD V VREFDQ(DC) I/O reference voltage DQ bus 0.49 × VDD 0.5 × VDD 0.51 × VDD V –600 – 600 mA 0.49 × VDD 20mV 0.5 × VDD 0.51 × VDD + 20mV V Address inputs, RAS#, CAS#, WE#, BA –32 0 32 µA S#, CKE, ODT, CK, CK# –16 0 16 DM –4 0 4 Output leakage current; 0V DQ, DQS, ≤ VOUT ≤ VDD; DQ and ODT DQS# are disabled; ODT is HIGH –10 0 10 µA VREF supply leakage current; VREFDQ = VDD/2 or VREFCA = VDD/2 (All other pins not under test = 0V) –16 0 16 µA IVTT Termination reference current from VTT VTT Termination reference voltage (DC) – command/address bus II IOZ IVREF Input leakage current; Any input 0V ≤ VIN ≤ VDD; VREF input 0V ≤ VIN ≤ 0.95V (All other pins not under test = 0V) Notes 1 2 TA Module ambient operating temperature 0 – 70 °C 3 TC DDR3 SDRAM component case operating temperature 0 – 95 °C 3, 4, 5 Notes: PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 1. Module is backward-compatible with 1.5V operation. Refer to device specification for details and operation guidance. 2. VTT termination voltage in excess of the stated limit will adversely affect the command and address signals’ voltage margin and will reduce timing margins. 3. TA and TC are simultaneous requirements. 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM Electrical Specifications 4. For further information, refer to technical note TN-00-08: “Thermal Applications,” available on Micron’s Web site. 5. The refresh rate is required to double when 85°C < TC ≤ 95°C. PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM DRAM Operating Conditions DRAM Operating Conditions Recommended AC operating conditions are given in the DDR3 component data sheets. Component specifications are available on Micron’s web site. Module speed grades correlate with component speed grades, as shown below. Table 11: Module and Component Speed Grades DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade Component Speed Grade -2G1 -093 -1G9 -107 -1G6 -125 -1G4 -15E -1G1 -187E -1G0 -187 -80C -25E -80B -25 Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system's memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM IDD Specifications IDD Specifications Table 12: DDR3 IDD Specifications and Conditions – 2GB (Die Revision F) Values are for the MT41K128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD01 TBD 840 744 mA Operating current 1: One bank ACTIVATE-to-READto-PRECHARGE IDD11 TBD 960 864 mA mA Precharge power-down current: Slow exit IDD2P02 TBD 160 128 Precharge power-down current: Fast exit IDD2P1 2 TBD 480 400 mA Precharge quiet standby current IDD2Q2 TBD 880 720 mA Precharge standby current IDD2N2 TBD 880 720 mA IDD2NT 1 TBD 680 584 mA Active power-down current IDD3P 2 TBD 592 480 mA Active standby current IDD3N2 TBD 960 800 mA 1 TBD 1240 1024 mA 1 TBD 1240 1024 mA 2 Precharge standby ODT current Burst read operating current IDD4R Burst write operating current IDD4W Refresh current IDD5B TBD 1540 1464 mA Self refresh temperature current: MAX TC = 85°C IDD62 TBD 96 96 mA IDD6ET TBD 144 144 mA IDD71 TBD 2960 2384 mA 2 TBD 192 160 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C All banks interleaved read current Reset current 2 IDD8 Notes: 1. One module rank in the active IDD, the other rank in IDD2P0. 2. All ranks in this IDD condition. Table 13: DDR3 IDD Specifications and Conditions – 2GB (Die Revision G) Values are for the MT41K128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD01 696 656 616 mA Operating current 1: One bank ACTIVATE-to-READto-PRECHARGE IDD11 816 776 736 mA IDD2P02 192 192 192 mA 2 560 480 400 mA 2 720 720 640 mA Precharge standby current IDD2N 2 720 720 640 mA Precharge standby ODT current IDD2NT1 536 496 496 mA Active power-down current IDD3P2 560 560 480 mA Precharge power-down current: Slow exit Precharge power-down current: Fast exit Precharge quiet standby current PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN IDD2P1 IDD2Q 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM IDD Specifications Table 13: DDR3 IDD Specifications and Conditions – 2GB (Die Revision G) (Continued) Values are for the MT41K128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter Symbol 1600 1333 1066 Units IDD3N2 Active standby current 720 720 Burst read operating current IDD4R 1 1256 Burst write operating current IDD4W1 1296 2 Refresh current 640 mA 1136 976 mA 1176 1016 mA 1496 1456 1416 mA 128 128 128 mA IDD6ET 160 160 160 mA IDD71 2096 2056 1696 mA 224 224 224 mA IDD5B Self refresh temperature current: MAX TC = 85°C Self refresh temperature current (SRT-enabled): MAX TC = 95°C All banks interleaved read current 2 IDD6 2 2 Reset current IDD8 Notes: 1. One module rank in the active IDD, the other rank in IDD2P0. 2. All ranks in this IDD condition. Table 14: DDR3 IDD Specifications and Conditions – 4GB (Die Revision D) Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD01 TBD 776 696 mA Operating current 1: One bank ACTIVATE-to-READto-PRECHARGE IDD11 TBD 896 856 mA mA Precharge power-down current: Slow exit IDD2P02 TBD 192 192 Precharge power-down current: Fast exit IDD2P1 2 TBD 480 400 mA Precharge quiet standby current IDD2Q2 TBD 560 480 mA Precharge standby current IDD2N2 TBD 592 512 mA IDD2NT 1 TBD 456 416 mA Active power-down current IDD3P 2 TBD 560 480 mA Active standby current IDD3N2 TBD 640 560 mA 1 TBD 1376 1216 mA 1 TBD 1416 1256 mA 2 Precharge standby ODT current Burst read operating current IDD4R Burst write operating current IDD4W Refresh current IDD5B TBD 1696 1616 mA Self refresh temperature current: MAX TC = 85°C IDD62 TBD 192 192 mA IDD6ET2 TBD 240 240 mA IDD71 TBD 3176 2776 mA 2 TBD 224 224 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C All banks interleaved read current Reset current IDD8 Notes: PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 1. One module rank in the active IDD, the other rank in IDD2P0. 2. All ranks in this IDD condition. 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM IDD Specifications Table 15: DDR3 IDD Specifications and Conditions – 4GB (Die Revision H) Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD01 696 656 616 mA Operating current 1: One bank ACTIVATE-to-READto-PRECHARGE IDD11 856 816 776 mA IDD2P02 192 192 192 mA 2 592 512 432 mA 2 672 592 512 mA Precharge standby current IDD2N 2 688 608 544 mA Precharge standby ODT current IDD2NT1 512 472 432 mA Active power-down current IDD3P2 752 672 592 mA 2 832 752 672 mA Burst read operating current IDD4R 1 1336 1216 1096 mA Burst write operating current IDD4W1 1336 1216 1096 mA Refresh current IDD5B1 1616 1576 1536 mA 192 192 192 mA IDD6ET 240 240 240 mA IDD71 2136 2016 1896 mA 224 224 224 mA Precharge power-down current: Slow exit Precharge power-down current: Fast exit Precharge quiet standby current Active standby current IDD2P1 IDD2Q IDD3N Self refresh temperature current: MAX TC = 85°C Self refresh temperature current (SRT-enabled): MAX TC = 95°C All banks interleaved read current IDD6 2 2 2 Reset current IDD8 Notes: 1. One module rank in the active IDD, the other rank in IDD2P0. 2. All ranks in this IDD condition. Table 16: DDR3 IDD Specifications and Conditions – 4GB (Die Revision M) Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD01 576 536 496 mA Operating current 1: One bank ACTIVATE-to-READto-PRECHARGE IDD11 696 656 616 mA IDD2P02 192 192 192 mA Precharge power-down current: Fast exit IDD2P1 2 528 448 368 mA Precharge quiet standby current IDD2Q2 528 448 368 mA Precharge standby current IDD2N2 560 480 400 mA 1 416 376 336 mA Precharge power-down current: Slow exit Precharge standby ODT current IDD2NT Active power-down current IDD3P 2 752 672 592 mA Active standby current IDD3N2 832 752 672 mA 1216 1096 976 mA Burst read operating current PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 1 IDD4R 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM IDD Specifications Table 16: DDR3 IDD Specifications and Conditions – 4GB (Die Revision M) (Continued) Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet Parameter Symbol 1600 1333 1066 Units Burst write operating current IDD4W1 1096 976 856 1 mA Refresh current IDD5B 1616 1576 1536 mA Self refresh temperature current: MAX TC = 85°C IDD62 192 192 192 mA IDD6ET2 240 240 240 mA IDD71 1856 1736 1616 mA 224 224 224 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C All banks interleaved read current Reset current IDD8 Notes: PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 2 1. One module rank in the active IDD, the other rank in IDD2P0. 2. All ranks in this IDD condition. 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM Temperature Sensor with Serial Presence-Detect EEPROM Temperature Sensor with Serial Presence-Detect EEPROM The temperature sensor continuously monitors the module's temperature and can be read back at any time over the I2C bus shared with the SPD EEPROM. Refer to JEDEC standard No. 21-C page 4.7-1, "Definition of the TSE2002av, Serial Presence Detect with Temperature Sensor." Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 17: Temperature Sensor with SPD EEPROM Operating Conditions Parameter/Condition Symbol Min Max Units VDDSPD 3.0 3.6 V Supply current: VDD = 3.3V IDD – 2.0 mA Input high voltage: Logic 1; SCL, SDA VIH VDDSPD x 0.7 VDDSPD + 1 V Input low voltage: Logic 0; SCL, SDA VIL –0.5 VDDSPD x 0.3 V Output low voltage: IOUT = 2.1mA VOL – 0.4 V Input current IIN –5.0 5.0 µA Temperature sensing range – –40 125 °C Temperature sensor accuracy (class B) – –1.0 1.0 °C Supply voltage Table 18: Temperature Sensor and SPD EEPROM Serial Interface Timing Parameter/Condition Symbol Min Max Units tBUF 4.7 – µs SDA fall time tF 20 300 ns SDA rise time tR – 1000 ns tHD:DAT 200 900 ns Time bus must be free before a new transition can start Data hold time Start condition hold time tH:STA 4.0 – µs Clock HIGH period tHIGH 4.0 50 µs Clock LOW period tLOW 4.7 – µs tSCL 10 100 kHz Data setup time tSU:DAT 250 – ns Start condition setup time tSU:STA 4.7 – µs Stop condition setup time tSU:STO 4.0 – µs SCL clock frequency PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM Temperature Sensor with Serial Presence-Detect EEPROM EVENT# Pin The temperature sensor also adds the EVENT# pin (open-drain). Not used by the SPD EEPROM, EVENT# is a temperature sensor output used to flag critical events that can be set up in the sensor’s configuration register. EVENT# has three defined modes of operation: interrupt mode, compare mode, and critical temperature mode. Event thresholds are programmed in the 0x01 register using a hysteresis. The alarm window provides a comparison window, with upper and lower limits set in the alarm upper boundary register and the alarm lower boundary register, respectively. When the alarm window is enabled, EVENT# will trigger whenever the temperature is outside the MIN or MAX values set by the user. The interrupt mode enables software to reset EVENT# after a critical temperature threshold has been detected. Threshold points are set in the configuration register by the user. This mode triggers the critical temperature limit and both the MIN and MAX of the temperature window. The compare mode is similar to the interrupt mode, except EVENT# cannot be reset by the user and returns to the logic HIGH state only when the temperature falls below the programmed thresholds. Critical temperature mode triggers EVENT# only when the temperature has exceeded the programmed critical trip point. When the critical trip point has been reached, the temperature sensor goes into comparator mode, and the critical EVENT# cannot be cleared through software. PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM Module Dimensions Module Dimensions Figure 3: 204-Pin DDR3 SODIMM 3.8 (0.15) MAX Front view 67.75 (2.667) 67.45 (2.656) 2.0 (0.079) R (2X) U1 U2 U3 U5 U6 30.15 (1.187) 29.85 (1.175) 1.8 (0.071) (2X) U7 U9 U8 U10 20.0 (0.787) TYP 6.0 (0.236) TYP 1.0 (0.039) TYP 2.0 (0.079) TYP Pin 1 0.45 (0.018) TYP 1.1 (0.043) 0.9 (0.035) 0.60 (0.024) TYP Pin 203 63.6 (2.504) TYP Back view U11 U12 U15 U16 U17 U18 U19 U20 4.0 (0.157) TYP 2.55 (0.1) TYP 3.0 (0.12) TYP Pin 204 39.0 (1.535) TYP Pin 2 21.0 (0.827) TYP 24.8 (0.976) TYP Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef83b11a03 ksf16c256_512x64hz – Rev. D 4/13 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved.