MT28F004B3WG-8T

4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply (Smart 3) FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1 • Compatible with 0.3µm Smart 3 device • Advanced 0.18µm CMOS floating-gate process • Address access time: 80ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • Byte- or word-wide READ and WRITE (MT28F400B3, 256K x 16/512K x 8) • Byte-wide READ and WRITE only (MT28F004B3, 512K x 8) • TSOP and SOP packaging options 40-Pin TSOP Type I 48-Pin TSOP Type I 44-Pin SOP OPTIONS • Timing 80ns access • Configurations 512K x 8 256K x 16/512K x 8 • Boot Block Starting Word Address Top (3FFFFh) Bottom (00000h) • Operating Temperature Range Commercial (0ºC to +70ºC) Extended (-40ºC to +85ºC) • Packages 44-pin SOP (MT28F400B3) 48-pin TSOP Type I (MT28F400B3) 40-pin TSOP Type I (MT28F004B3) NOTE: MARKING -8 MT28F004B3 MT28F400B3 T B None ET SG WG VG GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process. The MT28F004B3 and MT28F400B3 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures. Refer to Micron’s Web site (www.micron.com/flash) for the latest data sheet. 1. This generation of devices does not support 12V VPP compatibility production programming; however, 5V V PP application production programming can be used with no loss of performance. Part Number Example: MT28F400B3SG-8 T 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 1 ©2001, Micron Technology, Inc. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY PIN ASSIGNMENT (Top View) 48-PIN TSOP TYPE I A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RP# VPP WP# NC NC A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# VSS DQ15/(A-1) DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 VPP WP# A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44-PIN SOP 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RP# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# VSS DQ15/(A-1) DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC ORDER NUMBER AND PART MARKING MT28F400B3WG-8 B MT28F400B3WG-8 T MT28F400B3WG-8 BET MT28F400B3WG-8 TET ORDER NUMBER AND PART MARKING MT28F400B3SG-8 B MT28F400B3SG-8 T MT28F400B3SG-8 BET MT28F400B3SG-8 TET 40-PIN TSOP TYPE I A16 A15 A14 A13 A12 A11 A9 A8 WE# RP# VPP WP# A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 VSS NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 OE# VSS CE# A0 ORDER NUMBER AND PART MARKING MT28F004B3VG-8 B MT28F004B3VG-8 T MT28F004B3VG-8 BET MT28F004B3VG-8 TET 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FUNCTIONAL BLOCK DIAGRAM 8 Input Buffer BYTE#1 I/O Control Logic 7 16KB Boot Block 18 (19) 9 9 (10) Input Buffer Addr. A0–A17/(A18) A9 Buffer/ Latch 8KB Parameter Block 8KB Parameter Block 96KB Main Block Input Buffer A-1 Input Data Latch/Mux 16 128KB Main Block X - Decoder/Block Erase Control Addr. Power (Current) Control Counter 128KB Main Block DQ15/(A - 1)1 DQ8–DQ141 128KB Main Block WP# CE# OE# WE# RP# VCC VPP VPP Switch/ Pump Command Execution Logic State Machine YDecoder 7 Y - Select Gates 8 Sense Amplifiers Write/Erase-Bit Compare and Verify DQ0–DQ7 Output Buffer DQ15 Status Register Identification Register 7 Output Buffer 8 Output Buffer MUX 8 NOTE: 1. Does not apply to MT28F004B3. 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY PIN DESCRIPTIONS 44-PIN SOP 40-PIN TSOP 48-PIN TSOP NUMBERS NUMBERS NUMBERS SYMBOL 43 9 11 WE# TYPE Input DESCRIPTION Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is LOW, the cycle is either a WRITE to the command execution logic (CEL) or to the memory array. Write Protect: Unlocks the boot block when HIGH if VPP = VPPH1 (3.3V) or VPPH2 (5V) and RP# = VIH during a WRITE or ERASE. Does not affect WRITE or ERASE operation on other blocks. Chip Enable: Activates the device when LOW. When CE# is HIGH, the device is disabled and goes into standby power mode. Reset/Power-Down: When LOW, RP# clears the status register, sets the internal state machine (ISM) to the array read mode and places the device in deep powerdown mode. All inputs, including CE#, are “Don’t Care,” and all outputs are High-Z. RP# unlocks the boot block and overrides the condition of WP# when at VHH (12V), and must be held at VIH during all other modes of operation. Output Enable: Enables data output buffers when LOW. When OE# is HIGH, the output buffers are disabled. Byte Enable: If BYTE# = HIGH, the upper byte is active through DQ8–DQ15. If BYTE# = LOW, DQ8–DQ14 are High-Z, and all data is accessed through DQ0–DQ7. DQ15/(A-1) becomes the least significant address input. Address Inputs: Select a unique, 16-bit word or 8-bit byte. The DQ15/(A-1) input becomes the lowest order address when BYTE# = LOW (MT28F400B3) to allow for a selection of an 8-bit byte from the 524,288 available. 2 12 14 WP# Input 12 22 26 CE# Input 44 10 12 RP# Input 14 24 28 OE# Input 33 – 47 BYTE# Input 11, 10, 9, 8, 21, 20, 19, 7, 6, 5, 4, 18, 17, 16, 42, 41, 40, 15, 14, 8, 7, 39, 38, 37, 36, 6, 5, 4, 3, 36, 35, 34, 3 2, 1, 40, 13 31 – 15, 17, 19, 21, 24, 26, 28, 30 16, 18, 20, 22, 25, 27, 29 1 23 13, 32 – Input/ Data I/O: MSB of data when BYTE# = HIGH. Address Output Input: LSB of address input when BYTE# = LOW during READ or WRITE operation. 25-28, 32-35 29, 31, 33, DQ0–DQ7 Input/ Data I/Os: Data output pins during any READ operation 35, 38, 40, Output or data input pins during a WRITE. These pins are used 42, 44 to inputcommands to the CEL. – 30, 32, 34, DQ8–DQ14 Input/ Data I/Os: Data output pins during any READ operation 36, 39, 41, Output or data input pins during a WRITE when BYTE# = HIGH. 43 These pins are High-Z when BYTE# is LOW. 11 13 VPP Supply Write/Erase Supply Voltage: From a WRITE or ERASE CONFIRM until completion of the WRITE or ERASE, V PP must be at VPPH1 (3.3V) or VPPH2 (5V). VPP = “Don’t Care” during all other operations. 30, 31 37 VCC Supply Power Supply: +3.3V ±0.3V. 23, 39 27, 46 VSS Supply Ground. 29, 37, 38 9, 10, 15, 16 NC – No Connect: These pins may be driven or left unconnected. 25, 24, 23, 22, 21, 20, 19, 18, 8, 7, 6, 5, 4, 3, 2, 1, 48, 17 45 A0–A17/ (A18) Input DQ15/ (A-1) 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY TRUTH TABLE (MT28F400B3)1 FUNCTION Standby RESET READ READ (word mode) READ (byte mode) Output Disable ERASE SETUP ERASE CONFIRM3 mode)4 WRITE SETUP WRITE (word WRITE (byte READ mode)4 BLOCK)2, 7 H VHH H H VHH H VHH H H H H H H H H L L L L L L L L L L L L L L L H H H H H H H H H L L L L L L L L L L L L L L L H H H H H H X X H X X H X H X X X X X X X X X X X H H L L X H L H L H L X X X X X X X X X L L H H H H X X X X X X X X X VID VID VID VID VID VID X VPPH VPPH X VPPH VPPH VPPH VPPH X X X X X X X 20h D0h D0h 10h/40h Data-In Data-In Data-In Data-In FFh 89h 89h 70h 70h 71h 71h X X X X Data-In Data-In X X X 00h High-Z 44h High-Z 44h High-Z X X X X Data-In Data-In A-1 A-1 X – X – X – X H H H H H H H H H L L L L L L L L L L L H H H H H H H H H H L L L L L L X X X X X X X X X H L X X X X H L X X X X X X X X X X X X X X X X X X X X X X X VPPH X VPPH VPPH X Data-Out Data-Out Data-Out Data-Out High-Z High-Z 20h D0h 10h/40h Data-In Data-In FFh High-Z X X X Data-In X X A-1 High-Z X X X Data-In A-1 X RP# H L CE# H X OE# X X WE# WP# BYTE# A0 X X X X X X X X A9 X X VPP X X DQ0–DQ7 DQ8–DQ14 DQ15/A-1 High-Z High-Z High-Z High-Z High-Z High-Z WRITE/ERASE (EXCEPT BOOT BLOCK)2 ARRAY5 WRITE/ERASE (BOOT ERASE SETUP ERASE ERASE CONFIRM3 CONFIRM3, 6 WRITE SETUP WRITE (word mode)4 WRITE (word mode)4, 6 WRITE (byte WRITE (byte READ mode)4 mode)4, 6 ARRAY5 DEVICE IDENTIFICATION8, 9 Manufacturer Compatibility (word mode)10 Manufacturer Compatibility (byte mode) Device (word mode, top boot)10 Device (byte mode, top boot) Device (word mode, bottom boot) 10 Device (byte mode, bottom boot) NOTE: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. L = VIL (LOW), H = VIH (HIGH), X = VIL or VIH (“Don’t Care”). VPPH = VPPH1 (3.3V) or VPPH2 (5V). Operation must be preceded by ERASE SETUP command. Operation must be preceded by WRITE SETUP command. The READ ARRAY command must be issued before reading the array after writing or erasing. When WP# = VIH, RP# may be at VIH or VHH. VHH = 12V. VID = 12V; may also be read by issuing the IDENTIFY DEVICE command. A1–A8, A10–A17 = VIL. Value reflects DQ8–DQ15. 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY TRUTH TABLE (MT28F004B3)1 FUNCTION Standby RESET READ READ Output Disable ERASE SETUP ERASE CONFIRM3 WRITE SETUP WRITE4 READ ARRAY5 BLOCK)2, 7 H VHH H H VHH H H H H H IDENTIFICATION8, 9 L L L L L L H H H X X X L H H VID VID VID X X X 89h 78h 79h L L L L L L L H H H H H H H L L L L L L L X X H X X H X X X X X X X X X X X X X X X X VPPH VPPH X VPPH VPPH X 20h D0h D0h 10h/40h Data-In Data-In FFh WRITE/ERASE (BOOT ERASE SETUP ERASE CONFIRM3 ERASE CONFIRM3, 6 WRITE SETUP WRITE4 WRITE4, 6 READ ARRAY5 DEVICE Manufacturer Compatibility Device (top boot) Device (bottom boot) NOTE: 1. 2. 3. 4. 5. 6. 7. 8. 9. RP# H L H H H H H H H CE# H X L L L L L L L OE# X X L H H H H H H WE# X X H H L L L L L WP# X X X X X X X X X A0 X X X X X X X X X A9 X X X X X X X X X VPP X X X X X VPPH X VPPH X DQ0–DQ7 High-Z High-Z Data-Out High-Z 20h D0h 10h/40h Data-In FFh WRITE/ERASE (EXCEPT BOOT BLOCK)2 L = VIL, H = VIH, X = VIL or VIH. VPPH = VPPH1 = 3.3V or VPPH2 = 5V. Operation must be preceded by ERASE SETUP command. Operation must be preceded by WRITE SETUP command. The READ ARRAY command must be issued before reading the array after writing or erasing. When WP# = VIH, RP# may be at VIH or VHH. VHH = 12V. VID = 12V; may also be read by issuing the IDENTIFY DEVICE command. A1–A8, A10–A18 = VIL. 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FUNCTIONAL DESCRIPTION The MT28F004B3 and MT28F400B3 Flash devices incorporate a number of features ideally suited for system firmware. The memory array is segmented into individual erase blocks. Each block may be erased without affecting data stored in other blocks. These memory blocks are read, written and erased with commands to the command execution logic (CEL). The CEL controls the operation of the internal state machine (ISM), which completely controls all WRITE, BLOCK ERASE and VERIFY operations. The ISM protects each memory location from over-erasure and optimizes each memory location for maximum data retention. In addition, the ISM greatly simplifies the control necessary for writing the device insystem or in an external programmer. The Functional Description provides detailed information on the operation of the MT28F004B3 and MT28F400B3 and is organized into these sections: • • • • • • • • • • • Overview Memory Architecture Output (READ) Operations Input Operations Command Set ISM Status Register Command Execution Error Handling WRITE/ERASE Cycle Endurance Power Usage Power-Up HARDWARE-PROTECTED BOOT BLOCK This block of the memory array can be erased or written only when the RP# pin is taken to VHH or when the WP# pin is brought HIGH. This provides additional security for the core firmware during in-system firmware updates should an unintentional power fluctuation or system reset occur. The MT28F004B3 and MT28F400B3 are available with the boot block starting at the bottom of the address space (“B” suffix) or the top of the address space (“T” suffix). SELECTABLE BUS SIZE (MT28F400B3 ONLY) The MT28F400B3 allows selection of an 8-bit (512K x 8) or 16-bit (256K x 16) data bus for reading and writing the memory. The BYTE# pin is used to select the bus width. In the x16 configuration, control data is read or written only on the lower eight bits (DQ0–DQ7). Data written to the memory array utilizes all active data pins for the selected configuration. When the x8 configuration is selected, data is written in byte form; when the x16 configuration is selected, data is written in word form. INTERNAL STATE MACHINE (ISM) BLOCK ERASE and BYTE/WORD WRITE timing are simplified with an ISM that controls all erase and write algorithms in the memory array. The ISM ensures protection against overerasure and optimizes write margin to each cell. During WRITE operations, the ISM automatically increments and monitors WRITE attempts, verifies write margin on each memory cell and updates the ISM status register. When BLOCK ERASE is performed, the ISM automatically overwrites the entire addressed block (eliminates overerasure), increments and monitors ERASE attempts, and sets bits in the ISM status register. ISM STATUS REGISTER The ISM status register enables an external processor to monitor the status of the ISM during WRITE and ERASE operations. Two bits of the 8-bit status register are set and cleared entirely by the ISM. These bits indicate whether the ISM is busy with a WRITE or ERASE task and when an ERASE has been suspended. Additional error information is set in three other bits: VPP status, write status and erase status. COMMAND EXECUTION LOGIC (CEL) The CEL receives and interprets commands to the device. These commands control the operation of the ISM and the read path (i.e., memory array, ID register or status register). Commands may be issued to the CEL while the ISM is active. However, there are restrictions on OVERVIEW SMART 3 TECHNOLOGY (B3) Smart 3 technology allows maximum flexibility for insystem READ, WRITE and ERASE operations. WRITE and ERASE operations may be executed with a VPP voltage of 3.3V or 5V. Due to process technology advances, 5V V PP is optimal for application and production programming. SEVEN INDEPENDENTLY ERASABLE MEMORY BLOCKS The MT28F004B3 and MT28F400B3 are organized into seven independently erasable memory blocks that allow portions of the memory to be erased without affecting the rest of the memory data. A special boot block is hardware-protected against inadvertent erasure or writing by requiring either a super-voltage on the RP# pin or driving the WP# pin HIGH. One of these two conditions must exist along with the VPP voltage (3.3V or 5V) on the VPP pin before a WRITE or ERASE is performed on the boot block. The remaining blocks require only the VPP voltage be present on the VPP pin before writing or erasing. 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY what commands are allowed in this condition. See the Command Execution section for more detail. DEEP POWER-DOWN MODE To allow for maximum power conservation, the MT28F004B3 and MT28F400B3 feature a very low current, deep power-down mode. To enter this mode, the RP# pin is taken to VSS ±0.2V. In this mode, the current draw is a maximum of 8µA at 3.3V VCC. Entering deep power-down also clears the status register and sets the ISM to the read array mode. quires that a super-voltage (VHH) be applied to RP# or that the WP# pin be driven HIGH before erasure is commenced. The boot block is intended for the core firmware required for basic system functionality. The remaining six blocks do not require either of these two conditions be met before WRITE or ERASE operations. BOOT BLOCK The hardware-protected boot block provides extra security for the most sensitive portions of the firmware. This 16KB block may only be erased or written when the RP# pin is at the specified boot block unlock voltage (VHH) of 12V or when the WP# pin is VIH. During a WRITE or ERASE of the boot block, the RP# pin must be held at VHH or the WP# pin held HIGH until the ERASE or WRITE is completed. The VPP pin must be at VPPH (3.3V or 5V) when the boot block is written to or erased. The MT28F004B3 and MT28F400B3 are available in two configurations and top or bottom boot block. The top boot block version supports processors of the x86 variety. The bottom boot block version is intended for 680X0 and RISC applications. Figure 1 illustrates the memory address maps associated with these two versions. MEMORY ARCHITECTURE The MT28F004B3 and MT28F400B3 memory array architecture is designed to allow sections to be erased without disturbing the rest of the array. The array is divided into seven addressable blocks that vary in size and are independently erasable. When blocks rather than the entire array are erased, total device endurance is enhanced, as is system flexibility. Only the ERASE function is block-oriented. All READ and WRITE operations are done on a random-access basis. The boot block is protected from unintentional ERASE or WRITE with a hardware protection circuit which reWORD ADDRESS BYTE ADDRESS 3FFFFh 7FFFFh WORD ADDRESS 3FFFFh 3E000h 3DFFFh 3D000h 3CFFFh 3C000h 3BFFFh BYTE ADDRESS 7FFFFh 16KB Boot Block 128KB Main Block 30000h 2FFFFh 60000h 5FFFFh 7C000h 7BFFFh 7A000h 79FFFh 78000h 77FFFh 8KB Parameter Block 8KB Parameter Block 96KB Main Block 128KB Main Block 30000h 2FFFFh 60000h 5FFFFh 20000h 1FFFFh 40000h 3FFFFh 128KB Main Block 128KB Main Block 20000h 1FFFFh 40000h 3FFFFh 10000h 0FFFFh 20000h 1FFFFh 128KB Main Block 96KB Main Block 04000h 03FFFh 03000h 02FFFh 02000h 01FFFh 00000h 08000h 07FFFh 06000h 05FFFh 04000h 03FFFh 00000h 10000h 0FFFFh 20000h 1FFFFh 8KB Parameter Block 8KB Parameter Block 16KB Boot Block 128KB Main Block 00000h 00000h Bottom Boot MT28F004B3/400B3xx-xxB Top Boot MT28F004B3/400B3xx-xxT Figure 1 Memory Address Maps 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY PARAMETER BLOCKS The two 8KB parameter blocks store less sensitive and more frequently changing system parameters and also may store configuration or diagnostic coding. These blocks are enabled for erasure when the VPP pin is at VPPH. No super-voltage unlock or WP# control is required. MAIN MEMORY BLOCKS The four remaining blocks are general-purpose memory blocks and do not require a super-voltage on RP# or WP# control to be erased or written. These blocks are intended for code storage, ROM-resident applications or operating systems that require in-system update capability. latched on the falling edge of OE# or CE#, whichever occurs last. If the contents of the status register change during a READ of the status register, either OE# or CE# may be toggled while the other is held LOW to update the output. Following a WRITE or ERASE, the device automatically enters the status register read mode. In addition, a READ during a WRITE or ERASE produces the status register contents on DQ0–DQ7. When the device is in the erase suspend mode, a READ operation produces the status register contents until another command is issued. In certain other modes, READ STATUS REGISTER may be given to return to the status register read mode. All commands and their operations are described in the Command Set and Command Execution sections. IDENTIFICATION REGISTER A READ of the two 8-bit device identification registers requires the same input sequencing as a READ of the array. WE# must be HIGH, and OE# and CE# must be LOW. However, ID register data is output only on DQ0– DQ7, regardless of the condition of BYTE# on the MT28F400B3. A0 is used to decode between the two bytes of the device ID register; all other address inputs are “Don’t Care.” When A0 is LOW, the manufacturer compatibility ID is output, and when A0 is HIGH, the device ID is output. DQ8–DQ15 are High-Z when BYTE# is LOW. When BYTE# is HIGH, DQ8–DQ15 are 00h when the manufacturer compatibility ID is read and 44h when the device ID is read. To get to the identification register read mode, READ IDENTIFICATION may be issued while the device is in certain other modes. In addition, the identification register read mode can be reached by applying a super-voltage (VID) to the A9 pin. Using this method, the ID register can be read while the device is in any mode. When A9 is returned to VIL or VIH, the device returns to the previous mode. OUTPUT (READ) OPERATIONS The MT28F004B3 and MT28F400B3 feature three different types of READs. Depending on the current mode of the device, a READ operation produces data from the memory array, status register or device identification register. In each of these three cases, the WE#, CE# and OE# inputs are controlled in a similar manner. Moving between modes to perform a specific READ is described in the Command Execution section. MEMORY ARRAY To read the memory array, WE# must be HIGH, and OE# and CE# must be LOW. Valid data is output on the DQ pins when these conditions have been met and a valid address is given. Valid data remains on the DQ pins until the address changes, or until OE# or CE# goes HIGH, whichever occurs first. The DQ pins continue to output new data after each address transition as long as OE# and CE# remain LOW. The MT28F400B3 features selectable bus widths. When the memory array is accessed as a 256K x 16, BYTE# is HIGH, and data is output on DQ0–DQ15. To access the memory array as a 512K x 8, BYTE# must be LOW, DQ8– DQ14 must be High-Z, and all data must be output on DQ0–DQ7. The DQ15/A-1 pin becomes the lowest order address input so that 524,288 locations can be read. After power-up or RESET, the device is automatically in the array read mode. All commands and their operations are described in the Command Set and Command Execution sections. STATUS REGISTER Performing a READ of the status register requires the same input sequencing as a READ of the array except that the address inputs are “Don’t Care.” The status register contents are always output on DQ0–DQ7, regardless of the condition of BYTE# on the MT28F400B3. DQ8–DQ15 are LOW when BYTE# is HIGH, and DQ8–DQ14 are HighZ when BYTE# is LOW. Data from the status register is 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 INPUT OPERATIONS The DQ pins are used either to input data to the array or to input a command to the CEL. A command input issues an 8-bit command to the CEL to control the mode of operation of the device. A WRITE is used to input data to the memory array. The following section describes both types of inputs. More information describing how to use the two types of inputs to write or erase the device is provided in the Command Execution section. COMMANDS To perform a command input, OE# must be HIGH, and CE# and WE# must be LOW. Addresses are “Don’t Care” but must be held stable, except during an ERASE CONFIRM (described in a later section). The 8-bit com- 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY mand is input on DQ0–DQ7, while DQ8–DQ15 are “Don’t Care” on the MT28F400B3. The command is latched on the rising edge of CE# (CE#-controlled) or WE# (WE#-controlled), whichever occurs first. The condition of BYTE# on the MT28F400B3 has no effect on a command input. MEMORY ARRAY A WRITE to the memory array sets the desired bits to logic 0s but cannot change a given bit to a logic 1 from a logic 0. Setting any bits to a logic 1 requires that the entire block be erased. To perform a WRITE, OE# must be HIGH, CE# and WE# must be LOW, and VPP must be set to VPPH1 or VPPH2. Writing to the boot block also requires that the RP# pin be at VHH or WP# be HIGH. A0–A17/(A18) provide the address to be written, while the data to be written to the array is input on the DQ pins. The data and addresses are latched on the rising edge of CE# (CE#-controlled) or WE# (WE#-controlled), whichever occurs first. A WRITE must be preceded by a WRITE SETUP command. Details on how to input data to the array are described in the Write Sequence section. Selectable bus sizing applies to WRITEs as it does to READs on the MT28F400B3. When BYTE# is LOW (byte mode), data is input on DQ0–DQ7, DQ8–DQ14 are HighZ and DQ15 becomes the lowest order address input. When BYTE# is HIGH (word mode), data is input on DQ0– DQ15. COMMAND SET To simplify writing of the memory blocks, the MT28F004B3 and MT28F400B3 incorporate an ISM that controls all internal algorithms for the WRITE and ERASE cycles. An 8-bit command set is used to control the device. Details on how to sequence commands are provided in the Command Execution section. Table 1 lists the valid commands. ISM STATUS REGISTER The 8-bit ISM status register (see Table 2) is polled to check for WRITE or ERASE completion or any related errors. During or following a WRITE, ERASE or ERASE SUSPEND, a READ operation outputs the status register Table 1 Command Set COMMAND RESERVED HEX CODE DESCRIPTION 00h This command and all unlisted commands are invalid and should not be called. These commands are reserved to allow for future feature enhancements. Must be issued after any other command cycle before the array can be read. It is not necessary to issue this command after power-up or RESET. Allows the device ID and manufacturer compatibility ID to be read. A0 is used to decode between the manufacturer compatibility ID (A0 = LOW) and device ID (A0 = HIGH). Allows the status register to be read. Please refer to Table 2 for more information on the status register bits. Clears status register bits 3-5, which cannot be cleared by the ISM. The first command given in the two-cycle ERASE sequence. The ERASE is not completed unless followed by ERASE CONFIRM. The second command given in the two-cycle ERASE sequence. Must follow an ERASE SETUP command to be valid. Also used during an ERASE SUSPEND to resume the ERASE. The first command given in the two-cycle WRITE sequence. The write data and address are given in the following cycle to complete the WRITE. Requests a halt of the ERASE and puts the device into the erase suspend mode. When the device is in this mode, only READ STATUS REGISTER, READ ARRAY and ERASE RESUME commands may be executed. READ ARRAY IDENTIFY DEVICE FFh 90h READ STATUS REGISTER CLEAR STATUS REGISTER ERASE SETUP ERASE CONFIRM/RESUME 70h 50h 20h D0h WRITE SETUP ERASE SUSPEND 40h or 10h B0h 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY contents on DQ0–DQ7 without prior command. While the status register contents are read, the outputs are not updated if there is a change in the ISM status unless OE# or CE# is toggled. If the device is not in the write, erase, erase suspend or status register read mode, READ STATUS REGISTER (70h) can be issued to view the status register contents. All of the defined bits are set by the ISM, but only the ISM and erase suspend status bits are reset by the ISM. The erase, write and VPP status bits must be cleared using CLEAR STATUS REGISTER. If the VPP status bit (SR3) is set, the CEL does not allow further WRITE or ERASE operations until the status register is cleared. This enables the user to choose when to poll and clear the status register. For example, the host system may perform multiple BYTE WRITE operations before checking the status register instead of checking after each individual WRITE. Asserting the RP# signal or powering down the device also clears the status register. Table 2 Status Register Bit Definitions ISMS 7 ESS 6 ES 5 WS 4 VPPS 3 R 2–0 STATUS BIT # SR7 STATUS REGISTER BIT ISM STATUS (ISMS) 1 = Ready 0 = Busy ERASE SUSPEND STATUS (ESS) 1 = ERASE suspended 0 = ERASE in progress/completed ERASE STATUS (ES) 1 = BLOCK ERASE error 0 = Successful BLOCK ERASE DESCRIPTION The ISMS bit displays the active status of the state machine during WRITE or BLOCK ERASE operations. The controlling logic polls this bit to determine when the erase and write status bits are valid. Issuing an ERASE SUSPEND places the ISM in the suspend mode and sets this and the ISMS bit to “1.” The ESS bit remains “1” until an ERASE RESUME is issued. ES is set to “1” after the maximum number of ERASE cycles is executed by the ISM without a successful verify. ES is only cleared by a CLEAR STATUS REGISTER command or after a RESET. SR6 SR5 SR4 WRITE STATUS (WS) WS is set to “1” after the maximum number of WRITE cycles is 1 = WORD/BYTE WRITE error executed by the ISM without a successful verify. WS is only cleared 0 = Successful WORD/BYTE WRITE by a CLEAR STATUS REGISTER command or after a RESET. VPP STATUS (VPPS) 1 = No VPP voltage detected 0 = VPP present RESERVED VPPS detects the presence of a VPP voltage. It does not monitor VPP continuously, nor does it indicate a valid VPP voltage. The VPP pin is sampled for 3.3V or 5V after WRITE or ERASE CONFIRM is given. VPPS must be cleared by CLEAR STATUS REGISTER or by a RESET. Reserved for future use. SR3 SR0-2 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY COMMAND EXECUTION Commands are issued to bring the device into different operational modes. Each mode allows specific operations to be performed. Several modes require a sequence of commands to be written before they are reached. The following section describes the properties of each mode, and Table 3 lists all command sequences required to perform the desired operation. READ ARRAY The array read mode is the initial state of the device upon power-up and after a RESET. If the device is in any other mode, READ ARRAY (FFh) must be given to return to the array read mode. Unlike the WRITE SETUP command (40h), READ ARRAY does not need to be given before each individual read access. IDENTIFY DEVICE IDENTIFY DEVICE (90h) may be written to the CEL to enter the identify device mode. While the device is in this mode, any READ produces the device ID when A0 is HIGH and manufacturer compatibility ID when A0 is LOW. The device remains in this mode until another command is given. WRITE SEQUENCE Two consecutive cycles are needed to write data to the array. WRITE SETUP (40h or 10h) is given in the first cycle. The next cycle is the WRITE, during which the write address and data are issued and VPP is brought to VPPH. Writing to the boot block also requires that the RP# pin be brought to VHH or that the WP# pin be brought HIGH at the same time VPP is brought to VPPH. The ISM now begins to write the word or byte. VPP must be held at VPPH until the WRITE is completed (SR7 = 1). While the ISM executes the WRITE, the ISM status bit (SR7) is at “0,” and the device does not respond to any commands. Any READ operation produces the status register contents on DQ0–DQ7. When the ISM status bit (SR7) is set to a logic 1, the WRITE has been completed, and the device goes into the status register read mode until another command is given. After the ISM has initiated the WRITE, it cannot be aborted except by a RESET or by powering down the part. Doing either during a WRITE corrupts the data being written. If only the WRITE SETUP command has been given, the WRITE may be nullified by performing a null WRITE. To execute a null WRITE, FFh must be written when BYTE# is LOW, or FFFFh must be written when BYTE# is HIGH. When the ISM status bit (SR7) has been set, the device is in the status register read mode until another command is issued. Table 3 Command Sequences BUS FIRST SECOND CYCLES CYCLE CYCLE REQ’D OPERATION ADDRESS DATA OPERATION ADDRESS DATA 1 3 2 1 2 2 2 2 WRITE WRITE WRITE WRITE WRITE WRITE WRITE WRITE X X X X X X X X FFh 90h 70h 50h 20h B0h 40h 10h WRITE WRITE WRITE WRITE BA X WA WA D0h D0h WD WD 6, 7 6, 7 5, 6 READ READ IA X ID SRD COMMANDS READ ARRAY IDENTIFY DEVICE READ STATUS REGISTER CLEAR STATUS REGISTER ERASE SETUP/CONFIRM ERASE SUSPEND/RESUME WRITE SETUP/WRITE ALTERNATE WORD/BYTE WRITE NOTE: 1. 2. 3. 4. 5. 6. 7. NOTES 1 2, 3 4 Must follow WRITE or ERASE CONFIRM commands to the CEL to enable Flash array READ cycles. IA = Identify Address: 00h for manufacturer compatibility ID; 01h for device ID. ID = Identify Data. SRD = Status Register Data. On x16 (X00) devices BA = Block Address (A12–A17), on x8 (00X) devices BA = Block Address (A13–A17/[A18]). Addresses are “Don’t Care” in first cycle but must be held stable. WA = Address to be written; WD = Data to be written to WA. 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY ERASE SEQUENCE Executing an ERASE sequence sets all bits within a block to logic 1. The command sequence necessary to execute an ERASE is similar to that of a WRITE. To provide added security against accidental block erasure, two consecutive command cycles are required to initiate an ERASE of a block. In the first cycle, addresses are “Don’t Care,” and ERASE SETUP (20h) is given. In the second cycle, VPP must be brought to VPPH, an address within the block to be erased must be issued, and ERASE CONFIRM (D0h) must be given. If a command other than ERASE CONFIRM is given, the write and erase status bits (SR4 and SR5) are set, and the device is in the status register read mode. After the ERASE CONFIRM (D0h) is issued, the ISM starts the ERASE of the addressed block. Any READ operation outputs the status register contents on DQ0– DQ7. VPP must be held at VPPH until the ERASE is completed (SR7 = 1). When the ERASE is completed, the device is in the status register read mode until another command is issued. Erasing the boot block also requires that either the RP# pin be set to VHH or the WP# pin be held HIGH at the same time VPP is set to VPPH. ERASE SUSPENSION The only command that may be issued while an ERASE is in progress is ERASE SUSPEND. This command enables other commands to be executed while pausing the ERASE in progress. When the device has reached the erase suspend mode, the erase suspend status bit (SR6) and ISM status bit (SR7) are set. The device may now be given a READ ARRAY, ERASE RESUME or READ STATUS REGISTER command. After READ ARRAY has been issued, any location not within the block being erased may be read. If ERASE RESUME is issued before SR6 has been set, the device immediately proceeds with the ERASE in progress. ERROR HANDLING After the ISM status bit (SR7) has been set, the VPP (SR3), write (SR4) and erase (SR5) status bits may be checked. If one or a combination of these three bits has been set, an error has occurred. The ISM cannot reset these three bits. To clear these bits, CLEAR STATUS REGISTER (50h) must be given. If the VPP status bit (SR3) is set, further WRITE or ERASE operations cannot resume until the status register is cleared. Table 4 lists the combination of errors. Table 4 Status Register Error Code Description1 SR5 0 0 0 0 1 1 1 1 STATUS BITS SR4 SR3 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 ERROR DESCRIPTION No errors VPP voltage error WRITE error WRITE error, VPP voltage not valid at time of WRITE ERASE error ERASE error, VPP voltage not valid at time of ERASE CONFIRM Command sequencing error or WRITE/ERASE error Command sequencing error, VPP voltage error, with WRITE and ERASE errors NOTE: 1. SR3-SR5 must be cleared using CLEAR STATUS REGISTER. 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY WRITE/ERASE CYCLE ENDURANCE The MT28F004B3 and MT28F400B3 are designed and fabricated to meet advanced firmware storage requirements. To ensure this level of reliability, VPP must be at 3.3V ±0.3V or 5V ±10% during WRITE or ERASE cycles. Due to process technology advances, 5V VPP is optimal for application and production programming. POWER-UP The likelihood of unwanted WRITE or ERASE operations is minimized because two consecutive cycles are required to execute either operation. However, to reset the ISM and to provide additional protection while VCC is ramping, one of the following conditions must be met: • RP# must be held LOW until VCC is at valid functional level; or • CE# or WE# may be held HIGH and RP# must be toggled from VCC-GND-VCC. After a power-up or RESET, the status register is reset, and the device enters the array read mode. POWER USAGE The MT28F004B3 and MT28F400B3 offer several power-saving features that may be utilized in the array read mode to conserve power. Deep power-down mode is enabled by bringing RP# LOW. Current draw (ICC) in this mode is a maximum of 8µA at 3.3V VCC. When CE# is HIGH, the device enters standby mode. In this mode, maximum ICC current is 100µA at 3.3V VCC. If CE# is brought HIGH during a WRITE or ERASE, the ISM continues to operate, and the device consumes the respective active power until the WRITE or ERASE is completed. RP# Note 1 VCC (3.3V) t AA Address VALID Data t RWH VALID UNDEFINED NOTE: 1. VCC must be within the valid operating range before RP# goes HIGH. Figure 2 Power-Up/Reset Timing Diagram 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY SELF-TIMED WRITE SEQUENCE (WORD OR BYTE WRITE)1 Start COMPLETE WRITE STATUS-CHECK SEQUENCE Start (WRITE completed) WRITE 40h or 10h SR3 = 0? YES NO VPP Error 4, 5 VPP = 5V SR4 = 0? YES NO BYTE/WORD WRITE Error5 WRITE Word or Byte Address/Data WRITE Successful STATUS REGISTER READ SR7 = 1? YES Complete Status2 Check (optional) NO WRITE Complete 3 NOTE: 1. Sequence may be repeated for additional BYTE or WORD WRITEs. 2. Complete status check is not required. However, if SR3 = 1, further WRITEs are inhibited until the status register is cleared. 3. Device will be in status register read mode. To return to the array read mode, the FFh command must be issued. 4. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE or ERASE operations are allowed by the CEL. 5. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER. 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY SELF-TIMED BLOCK ERASE SEQUENCE1 Start COMPLETE BLOCK ERASE STATUS-CHECK SEQUENCE Start (ERASE completed) WRITE 20h SR3 = 0? YES NO VPP Error 5, 6 VPP = 3.3V or 5V SR4, 5 = 1? NO YES Command Sequence Error6 WRITE D0h, Block Address SR5 = 0? NO BLOCK ERASE Error6 ERASE Busy STATUS REGISTER READ YES ERASE Successful NO NO SR7 = 1? YES Complete Status 2 Check (optional) Suspend ERASE? YES Suspend 4 Sequence ERASE Resumed ERASE Complete 3 NOTE: 1. Sequence may be repeated to erase additional blocks. 2. Complete status check is not required. However, if SR3 = 1, further ERASEs are inhibited until the status register is cleared. 3. To return to the array read mode, the FFh command must be issued. 4. Refer to the ERASE SUSPEND flowchart for more information. 5. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE or ERASE operations are allowed by the CEL. 6. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER. 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY ERASE SUSPEND/RESUME SEQUENCE Start (ERASE in progress) WRITE B0h (ERASE SUSPEND) VPP = 3.3V or 5V STATUS REGISTER READ SR7 = 1? YES NO SR6 = 1? YES WRITE FFh (READ ARRAY) NO ERASE Completed Done Reading? YES WRITE D0h (ERASE RESUME) NO Resume ERASE 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb SMART 3 BOOT BLOCK FLASH MEMORY ABSOLUTE MAXIMUM RATINGS* Voltage on VCC Supply Relative to VSS ..................................... -0.5V to +4V** Input Voltage Relative to VSS .................... -0.5V to +4V** VPP Voltage Relative to VSS ........................ -0.5V to +5.5V† RP# or A9 Pin Voltage Relative to VSS ................................. -0.5V to +12.6V†† Temperature Under Bias .......................... -40ºC to +85ºC Storage Temperature (plastic) ............... -55ºC to +125ºC Power Dissipation ......................................................... 1W *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **VCC, input and I/O pins may transition to -2V for