Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
NAND Flash Memory
MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,
MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,
MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,
MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,
MT29F16G08AJADAWP
Features
• First block (block address 00h) is valid when shipped from factory with ECC. For minimum required
ECC, see Error Management.
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
• RESET (FFh) required as first command after power-on
• Alternate method of device initialization (Nand_Init) after power up (contact factory)
• Internal data move operations supported within the
plane from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 100,000 PROGRAM/ERASE cycles
• Operating voltage range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40°C to +85°C
– Automotive Industrial (AIT): –40°C to +85°C
– Automotive (AAT): –40°C to +105°C
• Package
– 48-pin TSOP type 1, CPL 2
– 63-ball VFBGA
• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks
16Gb: 16,384 blocks
• Asynchronous I/O performance
– tRC/tWC: 20ns (3.3V), 25ns (1.8V)
• Array performance
– Read page: 25µs 3
– Program page: 200µs (TYP: 1.8V, 3.3V)3
– Erase block: 700µs (TYP)
• Command set: ONFI NAND Flash Protocol
• Advanced command set
– Program page cache mode4
– Read page cache mode 4
– One-time programmable (OTP) mode
– Two-plane commands 4
– Interleaved die (LUN) operations
– Read unique ID
– Block lock (1.8V only)
– Internal data move
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Ready/Busy# (R/B#) signal provides a hardware
method of detecting operation completion
• WP# signal: Write protect entire device
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Notes:
1
1. The ONFI 1.0 specification is available at
www.onfi.org.
2. CPL = Center parting line.
3. See Program and Erase Characteristics for
tR_ECC and tPROG_ECC specifications.
4. These commands supported only with ECC
disabled.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Marketing Part Number Chart
MT 29F 4G 08
A
B
A
D
A WP
Micron Technology
IT
ES
:D
Design Revision (shrink)
Product Family
Production Status
29F = NAND Flash memory
Blank = Production
Density
MS = Mechanical sample
4G = 4Gb
QS = Qualification sample
ES = Engineering sample
8G = 8Gb
16G = 16Gb
Special Options
Blank
Device Width
X = Product longevity program (PLP)
08 = 8-bit
16 = 16-bit
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
Level
IT = Industrial (–40°C to +85°C)
AIT = Automotive Industrial (–40°C to +85°C)
AAT = Automotive (–40°C to +105°C)
A = SLC
Classification
Mark Die
nCE
RnB
B
1
1
1
I/O Channels
1
Speed Grade
D
2
1
1
1
Blank
J
4
2
2
1
Package Code
Operating Voltage Range
WP = 48-pin TSOP Type 1
A = 3.3V (2.7–3.6V)
HC = 63-ball VFBGA (10.5 x 13 x 1.0mm)
B = 1.8V (1.7–1.95V)
H4 = 63-ball VFBGA (9 x 11 x 1.0mm)
Interface
Feature Set
A = Async only
D = Feature set D
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Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
Contents
Important Notes and Warnings ......................................................................................................................... 8
General Description ......................................................................................................................................... 9
Signal Descriptions ........................................................................................................................................... 9
Signal Assignments ......................................................................................................................................... 10
Package Dimensions ....................................................................................................................................... 13
Architecture ................................................................................................................................................... 16
Device and Array Organization ........................................................................................................................ 17
Asynchronous Interface Bus Operation ........................................................................................................... 21
Asynchronous Enable/Standby ................................................................................................................... 21
Asynchronous Commands .......................................................................................................................... 21
Asynchronous Addresses ............................................................................................................................ 23
Asynchronous Data Input ........................................................................................................................... 24
Asynchronous Data Output ......................................................................................................................... 25
Write Protect# ............................................................................................................................................ 26
Ready/Busy# .............................................................................................................................................. 27
Device Initialization ....................................................................................................................................... 31
Command Definitions .................................................................................................................................... 32
Reset Operations ............................................................................................................................................ 35
RESET (FFh) ............................................................................................................................................... 35
Identification Operations ................................................................................................................................ 36
READ ID (90h) ............................................................................................................................................ 36
READ ID Parameter Tables .............................................................................................................................. 37
READ PARAMETER PAGE (ECh) ...................................................................................................................... 40
Parameter Page Data Structure Tables ............................................................................................................. 41
NAND Component Parameter Page Data Structure Tables ................................................................................ 46
READ UNIQUE ID (EDh) ................................................................................................................................ 49
Feature Operations ......................................................................................................................................... 50
SET FEATURES (EFh) .................................................................................................................................. 51
GET FEATURES (EEh) ................................................................................................................................. 52
Status Operations ........................................................................................................................................... 55
READ STATUS (70h) ................................................................................................................................... 56
READ STATUS ENHANCED (78h) ................................................................................................................ 56
Column Address Operations ........................................................................................................................... 58
RANDOM DATA READ (05h-E0h) ................................................................................................................ 58
RANDOM DATA READ TWO-PLANE (06h-E0h) ............................................................................................ 59
RANDOM DATA INPUT (85h) ...................................................................................................................... 60
PROGRAM FOR INTERNAL DATA INPUT (85h) ........................................................................................... 61
Read Operations ............................................................................................................................................. 63
READ MODE (00h) ..................................................................................................................................... 65
READ PAGE (00h-30h) ................................................................................................................................ 65
READ PAGE CACHE SEQUENTIAL (31h) ...................................................................................................... 66
READ PAGE CACHE RANDOM (00h-31h) .................................................................................................... 67
READ PAGE CACHE LAST (3Fh) .................................................................................................................. 69
READ PAGE TWO-PLANE 00h-00h-30h ....................................................................................................... 70
Program Operations ....................................................................................................................................... 72
PROGRAM PAGE (80h-10h) ......................................................................................................................... 73
PROGRAM PAGE CACHE (80h-15h) ............................................................................................................. 73
PROGRAM PAGE TWO-PLANE (80h-11h) .................................................................................................... 76
Erase Operations ............................................................................................................................................ 78
ERASE BLOCK (60h-D0h) ............................................................................................................................ 78
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Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
ERASE BLOCK TWO-PLANE (60h-D1h) ....................................................................................................... 79
Internal Data Move Operations ....................................................................................................................... 80
READ FOR INTERNAL DATA MOVE (00h-35h) ............................................................................................. 81
PROGRAM FOR INTERNAL DATA MOVE (85h–10h) ..................................................................................... 82
PROGRAM FOR INTERNAL DATA MOVE TWO-PLANE (85h-11h) ................................................................. 83
Block Lock Feature ......................................................................................................................................... 84
WP# and Block Lock ................................................................................................................................... 84
UNLOCK (23h-24h) .................................................................................................................................... 84
LOCK (2Ah) ................................................................................................................................................ 87
LOCK TIGHT (2Ch) ..................................................................................................................................... 88
BLOCK LOCK READ STATUS (7Ah) .............................................................................................................. 89
One-Time Programmable (OTP) Operations .................................................................................................... 91
Legacy OTP Commands .............................................................................................................................. 91
OTP DATA PROGRAM (80h-10h) ................................................................................................................. 92
RANDOM DATA INPUT (85h) ...................................................................................................................... 93
OTP DATA PROTECT (80h-10) ..................................................................................................................... 94
OTP DATA READ (00h-30h) ......................................................................................................................... 96
Two-Plane Operations .................................................................................................................................... 98
Two-Plane Addressing ................................................................................................................................ 98
Interleaved Die (Multi-LUN) Operations ......................................................................................................... 107
Error Management ........................................................................................................................................ 108
Internal ECC and Spare Area Mapping for ECC ............................................................................................... 110
Electrical Specifications ................................................................................................................................. 112
Electrical Specifications – DC Characteristics and Operating Conditions .......................................................... 114
Electrical Specifications – AC Characteristics and Operating Conditions .......................................................... 116
Electrical Specifications – Program/Erase Characteristics ................................................................................ 119
Asynchronous Interface Timing Diagrams ...................................................................................................... 120
Revision History ............................................................................................................................................ 132
Rev. R – 02/18 ............................................................................................................................................ 132
Rev. Q – 04/14 ............................................................................................................................................ 132
Rev. P – 02/14 ............................................................................................................................................ 132
Rev. O – 08/13 ............................................................................................................................................ 132
Rev. N – 10/12 ............................................................................................................................................ 132
Rev. M – 02/12 ........................................................................................................................................... 132
Rev. L – 1/12 .............................................................................................................................................. 132
Rev. K – 11/11 ............................................................................................................................................ 132
Rev. J – 09/11 ............................................................................................................................................. 132
Rev. I – 07/11 ............................................................................................................................................. 132
Rev. H – 12/10 ............................................................................................................................................ 133
Rev. G – 10/10 ............................................................................................................................................ 133
Rev. F – 06/10 ............................................................................................................................................ 133
Rev. E – 05/10 ............................................................................................................................................ 133
Rev. D – 03/10 ............................................................................................................................................ 133
Rev. C – 01/10 ............................................................................................................................................ 133
Rev. B – 10/09 ............................................................................................................................................ 133
Rev. A – 07/09 ............................................................................................................................................ 134
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Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
List of Tables
Table 1: Signal Definitions ............................................................................................................................... 9
Table 2: Array Addressing – MT29F4G08 (x8) .................................................................................................. 17
Table 3: Array Addressing – MT29F4G16 (x16) ................................................................................................. 18
Table 4: Array Addressing – MT29F8G08 and MT29F16G08 (x8) ....................................................................... 19
Table 5: Array Addressing – MT29F8G16 ( x16) ................................................................................................ 20
Table 6: Asynchronous Interface Mode Selection ............................................................................................ 21
Table 7: Command Set .................................................................................................................................. 32
Table 8: Two-Plane Command Set .................................................................................................................. 34
Table 9: READ ID Parameters for Address 00h ................................................................................................. 37
Table 10: READ ID Parameters for Address 20h ............................................................................................... 39
Table 11: Parameter Page Data Structure ........................................................................................................ 41
Table 12: Parameter Page Data Structure ........................................................................................................ 46
Table 13: Feature Address Definitions ............................................................................................................. 50
Table 14: Feature Address 90h – Array Operation Mode ................................................................................... 51
Table 15: Feature Addresses 01h: Timing Mode ............................................................................................... 53
Table 16: Feature Addresses 80h: Programmable I/O Drive Strength ................................................................ 54
Table 17: Feature Addresses 81h: Programmable R/B# Pull-Down Strength ...................................................... 54
Table 18: Status Register Definition ................................................................................................................ 55
Table 19: Block Lock Address Cycle Assignments ............................................................................................ 86
Table 20: Block Lock Status Register Bit Definitions ........................................................................................ 89
Table 21: Error Management Details ............................................................................................................. 108
Table 22: Absolute Maximum Ratings ............................................................................................................ 112
Table 23: Recommended Operating Conditions ............................................................................................. 112
Table 24: Valid Blocks ................................................................................................................................... 112
Table 25: Capacitance ................................................................................................................................... 113
Table 26: Test Conditions .............................................................................................................................. 113
Table 27: DC Characteristics and Operating Conditions (3.3V) ....................................................................... 114
Table 28: DC Characteristics and Operating Conditions (1.8V) ....................................................................... 115
Table 29: AC Characteristics: Command, Data, and Address Input (3.3V) ........................................................ 116
Table 30: AC Characteristics: Command, Data, and Address Input (1.8V) ........................................................ 116
Table 31: AC Characteristics: Normal Operation (3.3V) .................................................................................. 117
Table 32: AC Characteristics: Normal Operation (1.8V) .................................................................................. 117
Table 33: Program/Erase Characteristics ....................................................................................................... 119
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Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
List of Figures
Figure 1: Marketing Part Number Chart ............................................................................................................ 2
Figure 2: 48-Pin TSOP – Type 1 (Top View) ...................................................................................................... 10
Figure 3: 63-Ball VFBGA, x8 (Balls Down, Top View) ........................................................................................ 11
Figure 4: 63-Ball VFBGA, x16 (Balls Down, Top View) ...................................................................................... 12
Figure 5: 48-Pin TSOP – Type 1, CPL ............................................................................................................... 13
Figure 6: 63-Ball VFBGA (10.5mm x 13mm) .................................................................................................... 14
Figure 7: 63-Ball VFBGA (9mm x 11mm) ......................................................................................................... 15
Figure 8: NAND Flash Die (LUN) Functional Block Diagram ............................................................................ 16
Figure 9: Array Organization – MT29F4G08 (x8) .............................................................................................. 17
Figure 10: Array Organization – MT29F4G16 (x16) .......................................................................................... 18
Figure 11: Array Organization – MT29F8G08 and MT29F16G08 (x8) ................................................................. 19
Figure 12: Array Organization – MT29F8G16 (x16) .......................................................................................... 20
Figure 13: Asynchronous Command Latch Cycle ............................................................................................ 22
Figure 14: Asynchronous Address Latch Cycle ................................................................................................ 23
Figure 15: Asynchronous Data Input Cycles .................................................................................................... 24
Figure 16: Asynchronous Data Output Cycles ................................................................................................. 25
Figure 17: Asynchronous Data Output Cycles (EDO Mode) ............................................................................. 26
Figure 18: READ/BUSY# Open Drain .............................................................................................................. 28
Figure 19: tFall and tRise (3.3V V CC) ................................................................................................................ 28
Figure 20: tFall and tRise (1.8V V CC) ................................................................................................................ 29
Figure 21: IOL vs. Rp (VCC = 3.3V V CC) .............................................................................................................. 29
Figure 22: IOL vs. Rp (1.8V V CC) ....................................................................................................................... 30
Figure 23: TC vs. Rp ....................................................................................................................................... 30
Figure 24: R/B# Power-On Behavior ............................................................................................................... 31
Figure 25: RESET (FFh) Operation .................................................................................................................. 35
Figure 26: READ ID (90h) with 00h Address Operation .................................................................................... 36
Figure 27: READ ID (90h) with 20h Address Operation .................................................................................... 36
Figure 28: READ PARAMETER (ECh) Operation .............................................................................................. 40
Figure 29: READ UNIQUE ID (EDh) Operation ............................................................................................... 49
Figure 30: SET FEATURES (EFh) Operation .................................................................................................... 51
Figure 31: GET FEATURES (EEh) Operation .................................................................................................... 52
Figure 32: READ STATUS (70h) Operation ...................................................................................................... 56
Figure 33: READ STATUS ENHANCED (78h) Operation ................................................................................... 57
Figure 34: RANDOM DATA READ (05h-E0h) Operation ................................................................................... 58
Figure 35: RANDOM DATA READ TWO-PLANE (06h-E0h) Operation .............................................................. 59
Figure 36: RANDOM DATA INPUT (85h) Operation ........................................................................................ 60
Figure 37: PROGRAM FOR INTERNAL DATA INPUT (85h) Operation .............................................................. 62
Figure 38: READ PAGE (00h-30h) Operation ................................................................................................... 66
Figure 39: READ PAGE (00h-30h) Operation with Internal ECC Enabled .......................................................... 66
Figure 40: READ PAGE CACHE SEQUENTIAL (31h) Operation ......................................................................... 67
Figure 41: READ PAGE CACHE RANDOM (00h-31h) Operation ....................................................................... 68
Figure 42: READ PAGE CACHE LAST (3Fh) Operation ..................................................................................... 69
Figure 43: READ PAGE TWO-PLANE (00h-00h-30h) Operation ........................................................................ 71
Figure 44: PROGRAM PAGE (80h-10h) Operation ............................................................................................ 73
Figure 45: PROGRAM PAGE CACHE (80h–15h) Operation (Start) ..................................................................... 75
Figure 46: PROGRAM PAGE CACHE (80h–15h) Operation (End) ...................................................................... 75
Figure 47: PROGRAM PAGE TWO-PLANE (80h–11h) Operation ....................................................................... 76
Figure 48: ERASE BLOCK (60h-D0h) Operation .............................................................................................. 78
Figure 49: ERASE BLOCK TWO-PLANE (60h–D1h) Operation .......................................................................... 79
Figure 50: READ FOR INTERNAL DATA MOVE (00h-35h) Operation ................................................................ 81
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Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
Figure 51: READ FOR INTERNAL DATA MOVE (00h–35h) with RANDOM DATA READ (05h–E0h) ..................... 81
Figure 52: INTERNAL DATA MOVE (85h-10h) with Internal ECC Enabled ........................................................ 82
Figure 53: INTERNAL DATA MOVE (85h-10h) with RANDOM DATA INPUT with Internal ECC Enabled ............ 82
Figure 54: PROGRAM FOR INTERNAL DATA MOVE (85h–10h) Operation ........................................................ 82
Figure 55: PROGRAM FOR INTERNAL DATA MOVE (85h-10h) with RANDOM DATA INPUT (85h) .................... 83
Figure 56: PROGRAM FOR INTERNAL DATA MOVE TWO-PLANE (85h-11h) Operation .................................... 83
Figure 57: Flash Array Protected: Invert Area Bit = 0 ........................................................................................ 85
Figure 58: Flash Array Protected: Invert Area Bit = 1 ........................................................................................ 85
Figure 59: UNLOCK Operation ....................................................................................................................... 86
Figure 60: LOCK Operation ............................................................................................................................ 87
Figure 61: LOCK TIGHT Operation ................................................................................................................. 88
Figure 62: PROGRAM/ERASE Issued to Locked Block ...................................................................................... 89
Figure 63: BLOCK LOCK READ STATUS .......................................................................................................... 89
Figure 64: BLOCK LOCK Flowchart ................................................................................................................ 90
Figure 65: OTP DATA PROGRAM (After Entering OTP Operation Mode) ........................................................... 93
Figure 66: OTP DATA PROGRAM Operation with RANDOM DATA INPUT (After Entering OTP Operation Mode) ...
94
Figure 67: OTP DATA PROTECT Operation (After Entering OTP Protect Mode) ................................................. 95
Figure 68: OTP DATA READ ........................................................................................................................... 96
Figure 69: OTP DATA READ with RANDOM DATA READ Operation ................................................................. 97
Figure 70: TWO-PLANE PAGE READ .............................................................................................................. 99
Figure 71: TWO-PLANE PAGE READ with RANDOM DATA READ ................................................................... 100
Figure 72: TWO-PLANE PROGRAM PAGE ...................................................................................................... 100
Figure 73: TWO-PLANE PROGRAM PAGE with RANDOM DATA INPUT .......................................................... 101
Figure 74: TWO-PLANE PROGRAM PAGE CACHE MODE ............................................................................... 102
Figure 75: TWO-PLANE INTERNAL DATA MOVE ........................................................................................... 103
Figure 76: TWO-PLANE INTERNAL DATA MOVE with TWO-PLANE RANDOM DATA READ ............................ 104
Figure 77: TWO-PLANE INTERNAL DATA MOVE with RANDOM DATA INPUT ............................................... 105
Figure 78: TWO-PLANE BLOCK ERASE ......................................................................................................... 106
Figure 79: TWO-PLANE/MULTIPLE-DIE READ STATUS Cycle ........................................................................ 106
Figure 80: Spare Area Mapping (x8) ............................................................................................................... 110
Figure 81: Spare Area Mapping (x16) ............................................................................................................. 111
Figure 82: RESET Operation .......................................................................................................................... 120
Figure 83: READ STATUS Cycle ..................................................................................................................... 120
Figure 84: READ STATUS ENHANCED Cycle .................................................................................................. 121
Figure 85: READ PARAMETER PAGE ............................................................................................................. 121
Figure 86: READ PAGE .................................................................................................................................. 122
Figure 87: READ PAGE Operation with CE# “Don’t Care” ............................................................................... 123
Figure 88: RANDOM DATA READ .................................................................................................................. 124
Figure 89: READ PAGE CACHE SEQUENTIAL ................................................................................................ 125
Figure 90: READ PAGE CACHE RANDOM ...................................................................................................... 126
Figure 91: READ ID Operation ...................................................................................................................... 127
Figure 92: PROGRAM PAGE Operation .......................................................................................................... 127
Figure 93: PROGRAM PAGE Operation with CE# “Don’t Care” ........................................................................ 128
Figure 94: PROGRAM PAGE Operation with RANDOM DATA INPUT .............................................................. 128
Figure 95: PROGRAM PAGE CACHE .............................................................................................................. 129
Figure 96: PROGRAM PAGE CACHE Ending on 15h ........................................................................................ 129
Figure 97: INTERNAL DATA MOVE ............................................................................................................... 130
Figure 98: INTERNAL DATA MOVE (85h-10h) with Internal ECC Enabled ....................................................... 130
Figure 99: INTERNAL DATA MOVE (85h-10h) with Random Data Input with Internal ECC Enabled ................. 131
Figure 100: ERASE BLOCK Operation ............................................................................................................ 131
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Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Important Notes and Warnings
Important Notes and Warnings
Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,
including without limitation specifications and product descriptions. This document supersedes and replaces all
information supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorized
by Micron.
Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron
products are not designed or intended for use in automotive applications unless specifically designated by Micron
as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'
fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage
resulting from any use of non-automotive-grade products in automotive applications.
Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage
("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of the
Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron
component for any critical application, customer and distributor shall indemnify and hold harmless Micron and
its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the
Micron product.
Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,
applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE
WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR
PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included
in customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component.
Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential
damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such damages are based on tort, warranty,
breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly
authorized representative.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
General Description
General Description
Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer
commands, address, and data. There are five control signals used to implement the
asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control
hardware write protection and monitor device status (R/B#).
This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.
A target is the unit of memory accessed by a chip enable signal. A target contains one or
more NAND Flash die. A NAND Flash die is the minimum unit that can independently
execute commands and report status. A NAND Flash die, in the ONFI specification, is
referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable
signal. For further details, see Device and Array Organization.
This device has an internal 4-bit ECC that can be enabled using the GET/SET features.
See Internal ECC and Spare Area Mapping for ECC for more information.
Signal Descriptions
Table 1: Signal Definitions
Signal1
Type
Description2
ALE
Input
Address latch enable: Loads an address from I/O[7:0] into the address register.
CE#
CE#2
Input
Chip enable: Enables or disables one or more die (LUNs) in a target.
For the 16Gb device, CE# controls the first 8Gb of memory; CE2# controls the second 8Gb
of memory.
CLE
Input
Command latch enable: Loads a command from I/O[7:0] into the command register.
LOCK
Input
When LOCK is HIGH during power-up, the BLOCK LOCK function is enabled. To disable the
BLOCK LOCK, connect LOCK to VSS during power-up, or leave it disconnected (internal
pull-down).
RE#
Input
Read enable: Transfers serial data from the NAND Flash to the host system.
WE#
Input
Write enable: Transfers commands, addresses, and serial data from the host system to the
NAND Flash.
WP#
Input
Write protect: Enables or disables array PROGRAM and ERASE operations.
I/O[7:0] (x8)
I/O[15:0] (x16)
I/O
Data inputs/outputs: The bidirectional I/Os transfer address, data, and command information.
R/B#
R/B#2
Output
Ready/busy: An open-drain, active-low output that requires an external pull-up resistor.
This signal indicates target array activity.
For the 16Gb device, R/B# indicates the status of the first 8Gb of memory; R/B# indicates
the status of the second 8Gb of memory.
VCC
Supply
VCC: Core power supply
VSS
Supply
VSS: Core ground connection
NC
–
No connect: NCs are not internally connected. They can be driven or left unconnected.
DNU
–
Do not use: DNUs must be left unconnected.
Notes:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
1. See Device and Array Organization for detailed signal connections.
9
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Signal Assignments
2. See Asynchronous Interface Bus Operation for detailed asynchronous interface signal
descriptions.
Signal Assignments
Figure 2: 48-Pin TSOP – Type 1 (Top View)
x16
x8
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
R/B#23 R/B2#3
R/B#
R/B#
RE#
RE#
CE#
CE#
CE2#3 CE2#3
NC
NC
VCC
VCC
VSS
VSS
NC
NC
NC
NC
CLE
CLE
ALE
ALE
WE# WE#
WP# WP#
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
Notes:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
x8
x16
VSS1
DNU
NC
NC
I/O7
I/O6
I/O5
I/O4
NC
VCC1
DNU2
VCC
VSS
NC
VCC1
NC
I/O3
I/O2
I/O1
I/O0
NC
NC
DNU
VSS1
VSS
I/O15
I/O14
I/O13
I/O7
I/O6
I/O5
I/O4
I/O12
VCC
DNU2
VCC
VSS
NC
VCC
I/O11
I/O3
I/O2
I/O1
I/O0
I/O10
I/O9
I/O8
VSS
1. These pins might not be bonded in the package; however, Micron recommends that the
customer connect these pins to the designated external sources for ONFI compatibility.
2. For the 3V device, pin 38 is DNU. For the 1.8V device, pin 38 is LOCK.
3. R/B2# and CE2# are available on 16Gb devices only. They are NC for other configurations.
10
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Signal Assignments
Figure 3: 63-Ball VFBGA, x8 (Balls Down, Top View)
1
2
A
NC
NC
B
NC
3
4
6
5
7
8
C
WP#
ALE
Vss
CE#
WE#
R/B#
D
Vcc2
RE#
CLE
NC
NC
NC
E
NC
NC
NC
NC
NC
NC
F
NC
NC
NC
NC
Vss2
NC
G
DNU
Vcc2
LOCK1
NC
NC
DNU
H
NC
I/O0
NC
NC
NC
Vcc
J
NC
I/O1
NC
Vcc
I/O5
I/O7
K
Vss
I/O2
I/O3
I/O4
I/O6
Vss
9
10
NC
NC
NC
NC
L
NC
NC
NC
NC
M
NC
NC
NC
NC
Notes:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
1. For the 3V device, G5 changes to DNU. NO LOCK function is available on the 3.3V device.
2. These pins might not be bonded in the package; however, Micron recommends that the
customer connect these pins to the designated external sources for ONFI compatibility.
11
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© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Signal Assignments
Figure 4: 63-Ball VFBGA, x16 (Balls Down, Top View)
1
2
A
NC
NC
B
NC
3
4
6
5
7
8
C
WP#
ALE
Vss
CE#
WE#
R/B#
D
Vcc
RE#
CLE
NC
NC
NC
E
NC
NC
NC
NC
NC
NC
F
NC
NC
NC
NC
Vss
NC
G
DNU
Vcc
LOCK1
I/O13
I/O15
DNU
H
I/O8
I/O0
I/O10
I/O12
I/O14
Vcc
J
I/O9
I/O1
I/O11
Vcc
I/O5
I/O7
K
Vss
I/O2
I/O3
I/O4
I/O6
Vss
9
10
NC
NC
NC
NC
L
NC
NC
NC
NC
M
NC
NC
NC
NC
Note:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
1. For the 3V device, G5 changes to DNU. NO LOCK function is available on the 3.3V device.
12
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© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Package Dimensions
Package Dimensions
Figure 5: 48-Pin TSOP – Type 1, CPL
20.00 ±0.25
18.40 ±0.08
48
0.25
for reference only
0.50 TYP
for reference
only
1
Mold compound:
Epoxy novolac
Plated lead finish:
100% Sn
Package width and length
do not include mold
protrusion. Allowable
protrusion is 0.25 per side.
12.00 ±0.08
0.27 MAX
0.17 MIN
24
25
0.25
0.10
0.15
+0.03
-0.02
Gage
plane
See detail A
1.20 MAX
0.10
+0.10
-0.05
0.50 ±0.1
0.80
Detail A
Note:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
1. All dimensions are in millimeters.
13
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© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Package Dimensions
Figure 6: 63-Ball VFBGA (10.5mm x 13mm)
0.65 ±0.05
Seating
plane
0.12 A
A
63X Ø0.45
Solder ball material:
SAC305 (96.5% Sn,
3% Ag, 0.5% Cu).
Dimensions apply to
solder balls postreflow on Ø0.4 SMD
ball pads.
10
9
8
7
6
5
4
3
2
Ball A1 ID
1
Ball A1 ID
A
B
C
D
E
F
8.8 CTR
G
13 ±0.1
H
J
K
L
0.8 TYP
M
0.8 TYP
1.0 MAX
7.2 CTR
0.25 MIN
Bottom side saw fiducials may or
may not be covered with soldermask.
10.5 ±0.1
Note:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
1. All dimensions are in millimeters.
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Package Dimensions
Figure 7: 63-Ball VFBGA (9mm x 11mm)
Seating
plane
0.1 A
A
63X Ø0.45
Dimensions apply
to solder balls postreflow on Ø0.4 SMD
ball pads.
Solder ball material:
SAC305 (96.5% Sn,
3% Ag, 0.5% Cu).
10 9
8
7
6
5
4
3
2
Ball A1 ID
(covered by SR)
1
Ball A1 ID
A
B
C
D
E
F
8.8 CTR
G
11 ±0.1
H
J
K
L
0.8 TYP
M
1.0 MAX
0.8 TYP
0.25 MIN
7.2 CTR
9 ±0.1
Note:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
1. All dimensions are in millimeters.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Architecture
Architecture
These devices use NAND Flash electrical and command interfaces. Data, commands,
and addresses are multiplexed onto the same pins and received by I/O control circuits.
The commands received at the I/O control circuits are latched by a command register
and are transferred to control logic circuits for generating internal signals to control device operations. The addresses are latched by an address register and sent to a row decoder to select a row address, or to a column decoder to select a column address.
Data is transferred to or from the NAND Flash memory array, byte by byte (x8) or word
by word (x16), through a data register and a cache register.
The NAND Flash memory array is programmed and read using page-based operations
and is erased using block-based operations. During normal page operations, the data
and cache registers act as a single register. During cache operations, the data and cache
registers operate independently to increase data throughput. The status register reports
the status of die operations.
Figure 8: NAND Flash Die (LUN) Functional Block Diagram
VCC
I/Ox
I/O
control
VSS
Address register
Status register
Command register
CE#
Column decode
CLE
WE#
Control
logic
Row decode
ALE
RE#
WP#
LOCK1
NAND Flash
array
(2 planes)
Data register
R/B#
Cache register
ECC
Note:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
1. The LOCK pin is used on the 1.8V device.
16
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Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Device and Array Organization
Device and Array Organization
Figure 9: Array Organization – MT29F4G08 (x8)
2112 bytes
2112 bytes
DQ7
Cache Register
2048
64
2048
64
Data Register
2048
64
2048
64
2048 blocks
per plane
1 block
DQ0
1 page
= (2K + 64 bytes)
1 block
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
1 plane
= (128K + 4K) bytes x 2048 blocks
= 2112Mb
1 block
4096 blocks
per device
1 device = 2112Mb x 2 planes
= 4224Mb
Plane of
even-numbered blocks
(0, 2, 4, 6, ..., 4092, 4094)
Plane of
odd-numbered blocks
(1, 3, 5, 7, ..., 4093, 4095)
Table 2: Array Addressing – MT29F4G08 (x8)
Cycle
I/07
I/06
I/05
I/04
I/03
I/02
I/01
I/00
First
CA7
CA6
CA5
CA4
CA3
CA2
CA1
CA0
Second
LOW
LOW
LOW
LOW
CA11
CA10
CA9
CA8
Third
BA7
BA6
PA5
PA4
PA3
PA2
PA1
PA0
Fourth
BA15
BA14
BA13
BA12
BA11
BA10
BA9
BA8
Fifth
LOW
LOW
LOW
LOW
LOW
LOW
BA17
BA16
Notes:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
1. Block address concatenated with page address = actual page address. CAx = column address; PAx = page address; BAx = block address.
2. If CA11 is 1, then CA[10:6] must be 0.
3. BA6 controls plane selection.
17
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Device and Array Organization
Figure 10: Array Organization – MT29F4G16 (x16)
1056 words
1056 words
DQ15
Cache Register
1024
32
1024
32
Data Register
1024
32
1024
32
2048 blocks
per plane
1 block
DQ0
1 page
= (1K + 32 words)
1 block
= (1K + 32) words x 64 pages
= (64K + 2K) words
1 plane
= (64K + 2K) words x 2048 blocks
= 2112Mb
1 device
= 2112Mb x 2 planes
= 4224Mb
1 block
4096 blocks
per device
Plane of
even-numbered blocks
(0, 2, 4, 6, ..., 4092, 4094)
Plane of
odd-numbered blocks
(1, 3, 5, 7, ..., 4093, 4095)
Table 3: Array Addressing – MT29F4G16 (x16)
Cycle
I/O[15:8]
I/07
I/06
I/05
I/04
I/03
I/02
I/01
I/00
First
LOW
CA7
CA6
CA5
CA4
CA3
CA2
CA1
CA0
Second
LOW
LOW
LOW
LOW
LOW
LOW
CA10
CA9
CA8
Third
LOW
BA7
BA6
PA5
PA4
PA3
PA2
PA1
PA0
Fourth
LOW
BA15
BA14
BA13
BA12
BA11
BA10
BA9
BA8
Fifth
LOW
LOW
LOW
LOW
LOW
LOW
LOW
BA17
BA16
Notes:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
1. Block address concatenated with page address = actual page address. CAx = column address; PAx = page address; BAx = block address.
2. If CA10 = 1, then CA[9:5] must be 0.
3. BA6 controls plane selection.
18
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Device and Array Organization
Figure 11: Array Organization – MT29F8G08 and MT29F16G08 (x8)
Die 0
2112 bytes
Die 1
2112 bytes
2112 bytes
2112 bytes
I/O7
Cache Register
2048
64
2048
64
2048
64
2048
64
Data Register
2048
64
2048
64
2048
64
2048
64
I/O0
1 page = (2K + 64 bytes)
2048 blocks
per plane
1 block
1 block
1 block
1 block
1 block = (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
1 plane = (128K + 4K) bytes x 2048 blocks
= 2112Mb
4096 blocks
per die
1 die
Plane 0: evennumbered blocks
(0, 2, 4, 6, ...,
4092, 4094)1
Note:
Plane 1: oddnumbered blocks
(1, 3, 5, 7, ...,
4093, 4095)
Plane 0: evennumbered blocks
(4096, 4098, ...,
8188, 8190)
Plane 1: oddnumbered blocks
(4097, 4099, ...,
8189, 8191)
= 2112Mb x 2 planes
= 4224Mb
1 device = 4224Mb x 2 die
= 8448Mb
1. Die 0, Plane 0: BA18 = 0; BA6 = 0. Die 0, Plane 1: BA18 = 0; BA6 = 1.
Die 1, Plane 0: BA18 = 1; BA6 = 0. Die 1, Plane 1: BA18 = 1; BA6 = 1.
Table 4: Array Addressing – MT29F8G08 and MT29F16G08 (x8)
Cycle
I/07
I/06
I/05
I/04
I/03
I/02
I/01
I/00
First
CA7
CA6
CA5
CA4
CA3
CA2
CA1
CA0
Second
LOW
LOW
LOW
LOW
CA11
CA10
CA9
CA8
Third
BA7
BA6
PA5
PA4
PA3
PA2
PA1
PA0
Fourth
BA15
BA14
BA13
BA12
BA11
BA10
BA9
BA8
Fifth
LOW
LOW
LOW
LOW
LOW
BA183
BA17
BA16
Notes:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
1. CAx = column address; PAx = page address; BAx = block address.
2. If CA11 is 1, then CA[10:6] must be 0.
3. Die address boundary: 0 = 0–4Gb; 1 = 4Gb–8Gb.
19
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Device and Array Organization
Figure 12: Array Organization – MT29F8G16 (x16)
Die 0
1056 words
Die 1
1056 words
1056 words
1056 words
I/O7
Cache Register
1024
32
1024
32
1024
32
1024
32
Data Register
1024
32
1024
32
1024
32
1024
32
I/O0
1 page = (1K + 32 words)
2048 blocks
per plane
1 block
1 block
1 block
1 block
1 block = (1K + 32) words x 64 pages
= (64K + 2K) words
1 plane = (128K + 4K) bytes x 2048 blocks
= 2112Mb
4096 blocks
per die
1 die
Plane 0: evennumbered blocks
(0, 2, 4, 6, ...,
4092, 4094)1
Plane 1: oddnumbered blocks
(1, 3, 5, 7, ...,
4093, 4095)
Plane 0: evennumbered blocks
(4096, 4098, ...,
8188, 8190)
Plane 1: oddnumbered blocks
(4097, 4099, ...,
8189, 8191)
= 2112Mb x 2 planes
= 4224Mb
1 device = 4224Mb x 2 die
= 8448Mb
1. Die 0, Plane 0: BA18 = 0; BA6 = 0. Die 0, Plane 1: BA18 = 0; BA6 = 1.
Die 1, Plane 0: BA18 = 1; BA6 = 0. Die 1, Plane 1: BA18 = 1; BA6 = 1.
Note:
Table 5: Array Addressing – MT29F8G16 ( x16)
Cycle
I/O[15:8]
I/07
I/06
I/05
I/04
I/03
I/02
I/01
I/O0
First
LOW
CA7
CA6
CA5
CA4
CA3
CA2
CA1
CA0
Second
LOW
LOW
LOW
LOW
LOW
LOW
CA10
CA9
CA8
Third
LOW
BA7
BA6
PA5
PA4
PA3
PA2
PA1
PA0
Fourth
LOW
BA15
BA14
BA13
BA12
BA11
BA10
BA9
PA8
Fifth
LOW
LOW
LOW
LOW
LOW
LOW
BA183
BA17
BA16
Notes:
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN
1. Block address concatenated with page address = actual page address. CAx = column address; PAx = page address; BAx = block address.
2. If CA10 = 1, then CA[9:5] must be 0.
3. Die address boundary: 0 = 0–4Gb; 1 = 4Gb–8Gb.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Bus Operation
Asynchronous Interface Bus Operation
The bus on the device is multiplexed. Data I/O, addresses, and commands all share the
same pins. I/O[15:8] are used only for data in the x16 configuration. Addresses and
commands are always supplied on I/O[7:0].
The command sequence typically consists of a COMMAND LATCH cycle, address input
cycles, and one or more data cycles, either READ or WRITE.
Table 6: Asynchronous Interface Mode Selection
Mode1
CE#
CLE
ALE
WE#
RE#
I/Ox
WP#
Standby2
H
X
X
X
X
X
0V/VCC
Command input
L
H
L
H
X
H
Address input
L
L
H
H
X
H
Data input
L
L
L
H
X
H
Data output
L
L
L
H
X
X
Write protect
X
X
X
X
X
L
X
1. Mode selection settings for this table: H = Logic level HIGH; L = Logic level LOW; X = VIH
or VIL.
2. WP# should be biased to CMOS LOW or HIGH for standby.
Notes:
Asynchronous Enable/Standby
When the device is not performing an operation, the CE# pin is typically driven HIGH
and the device enters standby mode. The memory will enter standby if CE# goes HIGH
while data is being transferred and the device is not busy. This helps reduce power consumption.
The CE# “Don’t Care” operation enables the NAND Flash to reside on the same asynchronous memory bus as other Flash or SRAM devices. Other devices on the memory
bus can then be accessed while the NAND Flash is busy with internal operations. This
capability is important for designs that require multiple NAND Flash devices on the
same bus.
A HIGH CLE signal indicates that a command cycle is taking place. A HIGH ALE signal
signifies that an ADDRESS INPUT cycle is occurring.
Asynchronous Commands
An asynchronous command is written from I/O[7:0] to the command register on the rising edge of WE# when CE# is LOW, ALE is LOW, CLE is HIGH, and RE# is HIGH.
Commands are typically ignored by die (LUNs) that are busy (RDY = 0); however, some
commands, including READ STATUS (70h) and READ STATUS ENHANCED (78h), are
accepted by die (LUNs) even when they are busy.
For devices with a x16 interface, I/O[15:8] must be written with zeros when a command
is issued.
PDF: 09005aef83b25735
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Bus Operation
Figure 13: Asynchronous Command Latch Cycle
CLE
tCLS
tCS
tCLH
tCH
CE#
tWP
WE#
tALS
tALH
tDS
tDH
ALE
I/Ox
COMMAND
Don’t Care
PDF: 09005aef83b25735
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Bus Operation
Asynchronous Addresses
An asynchronous address is written from I/O[7:0] to the address register on the rising
edge of WE# when CE# is LOW, ALE is HIGH, CLE is LOW, and RE# is HIGH.
Bits that are not part of the address space must be LOW (see Device and Array Organization). The number of cycles required for each command varies. Refer to the command
descriptions to determine addressing requirements.
Addresses are typically ignored by die (LUNs) that are busy (RDY = 0); however, some
addresses are accepted by die (LUNs) even when they are busy; for example, like address cycles that follow the READ STATUS ENHANCED (78h) command.
Figure 14: Asynchronous Address Latch Cycle
CLE
tCLS
tCS
CE#
tWP
tWC
tWH
WE#
tALS
tALH
ALE
tDS tDH
I/Ox
Col
add 1
Col
add 2
Row
add 1
Row
add 2
Don’t Care
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Row
add 3
Undefined
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Bus Operation
Asynchronous Data Input
Data is written from I/O[7:0] to the cache register of the selected die (LUN) on the rising
edge of WE# when CE# is LOW, ALE is LOW, CLE is LOW, and RE# is HIGH.
Data input is ignored by die (LUNs) that are not selected or are busy (RDY = 0). Data is
written to the data register on the rising edge of WE# when CE#, CLE, and ALE are LOW,
and the device is not busy.
Data is input on I/O[7:0] on x8 devices and on I/O[15:0] on x16 devices.
Figure 15: Asynchronous Data Input Cycles
CLE
tCLH
CE#
tALS
tCH
ALE
tWC
tWP
tWP
tWP
WE#
tWH
tDS
I/Ox
tDH
DIN M
tDS
tDH
DIN M+1
tDS
tDH
DIN N
Don’t Care
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Bus Operation
Asynchronous Data Output
Data can be output from a die (LUN) if it is in a READY state. Data output is supported
following a READ operation from the NAND Flash array. Data is output from the cache
register of the selected die (LUN) to I/O[7:0] on the falling edge of RE# when CE# is
LOW, ALE is LOW, CLE is LOW, and WE# is HIGH.
If the host controller is using a tRC of 30ns or greater, the host can latch the data on the
rising edge of RE# (see the figure below for proper timing). If the host controller is using
a tRC of less than 30ns, the host can latch the data on the next falling edge of RE#.
Using the READ STATUS ENHANCED (78h) command prevents data contention following an interleaved die (multi-LUN) operation. After issuing the READ STATUS ENHANCED (78h) command, to enable data output, issue the READ MODE (00h) command.
Data output requests are typically ignored by a die (LUN) that is busy (RDY = 0); however, it is possible to output data from the status register even when a die (LUN) is busy by
first issuing the READ STATUS or READ STATUS ENHANCED (78h) command.
Figure 16: Asynchronous Data Output Cycles
tCEA
CE#
tREA
tREA
tRP
tCHZ
tREA
tREH
tCOH
RE#
tRHZ
tRHZ
tRHOH
DOUT
I/Ox
tRR
DOUT
DOUT
tRC
RDY
Don’t Care
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Bus Operation
Figure 17: Asynchronous Data Output Cycles (EDO Mode)
CE#
tRC
tRP
tCHZ
tREH
tCOH
RE#
tREA
tCEA
I/Ox
tREA
tRHZ
tRLOH
tRHOH
DOUT
DOUT
DOUT
tRR
RDY
Don’t Care
Write Protect#
The write protect# (WP#) signal enables or disables PROGRAM and ERASE operations
to a target. When WP# is LOW, PROGRAM and ERASE operations are disabled. When
WP# is HIGH, PROGRAM and ERASE operations are enabled. When WP# is LOW or toggled LOW during a READ operation, read will be performed as normal. It is recommended that the host drive WP# LOW during power-on until V CC is stable to prevent inadvertent PROGRAM and ERASE operations (see Device Initialization for additional details).
If WP# is toggled during PROGRAM or ERASE (while RB# is LOW), then the following
will occur
• The PROGRAM or ERASE operation is aborted
• In asynchronous mode, toggling WP# LOW during a NAND PROGRAM or ERASE operation will act like a RESET (FFh) command. In synchronous mode, it will act like a
SYNCHRONOUS RESET (FCh) command
• The data that was being programmed or erased (targeted page or block) is not valid
anymore
• The status register will be set to 60h until a RESET, new operation, or new power up
command is given
After a command sequence is complete and the target is ready, WP# can be transitioned. After WP# is transitioned, the host must wait tWW before issuing a new command.
The WP# signal is always an active input, even when CE# is HIGH. This signal should
not be multiplexed with other signals.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Bus Operation
Ready/Busy#
The ready/busy# (R/B#) signal provides a hardware method of indicating whether a target is ready or busy. A target is busy when one or more of its die (LUNs) are busy
(RDY = 0). A target is ready when all of its die (LUNs) are ready (RDY = 1). Because each
die (LUN) contains a status register, it is possible to determine the independent status
of each die (LUN) by polling its status register instead of using the R/B# signal (see Status Operations for details regarding die (LUN) status).
This signal requires a pull-up resistor, Rp, for proper operation. R/B# is HIGH when the
target is ready, and transitions LOW when the target is busy. The signal's open-drain
driver enables multiple R/B# outputs to be OR-tied. Typically, R/B# is connected to an
interrupt pin on the system controller.
The combination of Rp and capacitive loading of the R/B# circuit determines the rise
time of the R/B# signal. The actual value used for Rp depends on the system timing requirements. Large values of Rp cause R/B# to be delayed significantly. Between the 10%
and 90% points on the R/B# waveform, the rise time is approximately two time constants (TC).
TC = R × C
Where R = Rp (resistance of pull-up resistor), and C = total capacitive load.
The fall time of the R/B# signal is determined mainly by the output impedance of the
R/B# signal and the total load capacitance. Approximate Rp values using a circuit load
of 100pF are provided in Figure 23 (page 30).
The minimum value for Rp is determined by the output drive capability of the R/B# signal, the output voltage swing, and V CC.
V (MAX) - VOL (MAX)
Rp = CC
IOL + ΣIL
Where ΣIL is the sum of the input currents of all devices tied to the R/B# pin.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Bus Operation
Figure 18: READ/BUSY# Open Drain
Rp
VCC
R/B#
Open drain output
IOL
VSS
Device
Figure 19: tFall and tRise (3.3V VCC)
3.50
3.00
2.50
V
tFall tRise
2.00
1.50
1.00
0.50
0.00
–1
0
2
4
0
TC
Notes:
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2
4
6
VCC 3.3V
1. tFall and tRise calculated at 10% and 90% points.
2. tRise dependent on external capacitance and resistive loading and output transistor impedance.
3. tRise primarily dependent on external pull-up resistor and external capacitive loading.
4. tFall = 10ns at 3.3V.
5. See TC values in Figure 23 (page 30) for approximate Rp value and TC.
28
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Bus Operation
Figure 20: tFall and tRise (1.8V VCC)
3.50
3.00
2.50
V
tFall
2.00
tRise
1.50
1.00
0.50
0.00
-1
0
2
4
0
2
4
TC
1.
2.
3.
4.
Notes:
6
VCC1.8V
tFall
and tRise are calculated at 10% and 90% points.
is primarily dependent on external pull-up resistor and external capacitive loading.
tFall ≈ 7ns at 1.8V.
See TC values in Figure 23 (page 30) for TC and approximate Rp value.
tRise
Figure 21: IOL vs. Rp (VCC = 3.3V VCC)
3.50
3.00
2.50
2.00
I (mA)
1.50
1.00
0.50
0.00
0
2000
400 0
6000
8000
10,000
12,000
Rp (Ω)
IOL at VCC (MAX)
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Bus Operation
Figure 22: IOL vs. Rp (1.8V VCC)
3.50
3.00
2.50
2.00
I (mA)
1.50
1.00
0.50
0.00
0
2000
4000
6000
8000
10,000
12,000
Rp (Ω)
IOL at VCC (MAX)
Figure 23: TC vs. Rp
1200
1000
800
TC (ns)
600
400
200
0
0
2000
4000
6000
8000
Rp (W)
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30
10,000
12,000
IOL at VCC (MAX)
RC = TC
C = 100pF
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Device Initialization
Device Initialization
Micron NAND Flash devices are designed to prevent data corruption during power
transitions. V CC is internally monitored. (The WP# signal supports additional hardware
protection during power transitions.) When ramping V CC, use the following procedure
to initialize the device:
1. Ramp V CC.
2. The host must wait for R/B# to be valid and HIGH before issuing RESET (FFh) to
any target. The R/B# signal becomes valid when 50µs has elapsed since the beginning the V CC ramp, and 10µs has elapsed since V CC reaches V CC,min.
3. If not monitoring R/B#, the host must wait at least 100µs after V CC reaches V CC,min.
If monitoring R/B#, the host must wait until R/B# is HIGH.
4. The asynchronous interface is active by default for each target. Each LUN draws
less than an average of 10mA (IST) measured over intervals of 1ms until the RESET
(FFh) command is issued.
5. The RESET (FFh) command must be the first command issued to all targets (CE#s)
after the NAND Flash device is powered on. Each target will be busy for 1ms after a
RESET command is issued. The RESET busy time can be monitored by polling
R/B# or issuing the READ STATUS (70h) command to poll the status register.
6. The device is now initialized and ready for normal operation.
Figure 24: R/B# Power-On Behavior
50µs (MIN)
VCC
VCC = VCC (MIN)
10µs
(MAX)
R/B#
100µs (MAX)
VCC ramp
starts
Reset (FFh)
is issued
Invalid
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Command Definitions
Command Definitions
Table 7: Command Set
Command
Cycle #1
Number of
Valid
Address
Cycles
Data
Input
Cycles
FFh
0
–
–
Yes
Yes
READ ID
90h
1
–
–
No
No
READ PARAMETER PAGE
ECh
1
–
–
No
No
READ UNIQUE ID
EDh
1
–
–
No
No
GET FEATURES
EEh
1
–
–
No
No
SET FEATURES
EFh
1
4
–
No
No
READ STATUS
70h
0
–
–
Yes
READ STATUS ENHANCED
78h
3
–
–
Yes
Yes
Command
Valid While
Command Selected LUN
Cycle #2
is Busy1
Valid While
Other LUNs
are Busy2
Notes
Reset Operations
RESET
Identification Operation
Feature Operations
Status Operations
Column Address Operations
RANDOM DATA READ
05h
2
–
E0h
No
Yes
RANDOM DATA INPUT
85h
2
Optional
–
No
Yes
PROGRAM FOR
INTERNAL DATA MOVE
85h
5
Optional
–
No
Yes
READ MODE
00h
0
–
–
No
Yes
READ PAGE
00h
5
–
30h
No
Yes
READ PAGE CACHE SEQUENTIAL
31h
0
–
–
No
Yes
4, 5
READ PAGE CACHE
RANDOM
00h
5
–
31h
No
Yes
4, 5
READ PAGE CACHE LAST
3Fh
0
–
–
No
Yes
4, 5
PROGRAM PAGE
80h
5
Yes
10h
No
Yes
PROGRAM PAGE CACHE
80h
5
Yes
15h
No
Yes
60h
3
–
D0h
No
Yes
5
–
35h
No
Yes
3
READ OPERATIONS
Program Operations
4, 6
Erase Operations
ERASE BLOCK
Internal Data Move Operations
READ FOR INTERNAL
DATA MOVE
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00h
32
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Command Definitions
Table 7: Command Set (Continued)
Command
Cycle #1
Number of
Valid
Address
Cycles
Data
Input
Cycles
85h
5
Optional
10h
No
Yes
23h
3
–
–
No
Yes
BLOCK UNLOCK HIGH
24h
3
–
–
No
Yes
BLOCK LOCK
2Ah
–
–
–
No
Yes
BLOCK LOCK-TIGHT
2Ch
–
–
–
No
Yes
BLOCK LOCK READ
STATUS
7Ah
3
–
–
No
Yes
Command
PROGRAM FOR INTERNAL DATA MOVE
Valid While
Command Selected LUN
Cycle #2
is Busy1
Valid While
Other LUNs
are Busy2
Notes
Block Lock Operations
BLOCK UNLOCK LOW
One-Time Programmable (OTP) Operations
OTP DATA LOCK BY
PAGE (ONFI)
80h
5
No
10h
No
No
7
OTP DATA PROGRAM
(ONFI)
80h
5
Yes
10h
No
No
7
OTP DATA READ (ONFI)
00h
5
No
30h
No
No
7
Notes:
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1. Busy means RDY = 0.
2. These commands can be used for interleaved die (multi-LUN) operations (see Interleaved
Die (Multi-LUN) Operations (page 107)).
3. Do not cross plane address boundaries when using READ for INTERNAL DATA MOVE and
PROGRAM for INTERNAL DATA MOVE.
4. These commands supported only with ECC disabled.
5. Issuing a READ PAGE CACHE series (31h, 00h-31h, 3Fh) command when the array is busy
(RDY = 1, ARDY = 0) is supported if the previous command was a READ PAGE (00h-30h)
or READ PAGE CACHE series command; otherwise, it is prohibited.
6. Issuing a PROGRAM PAGE CACHE (80h-15h) command when the array is busy (RDY = 1,
ARDY = 0) is supported if the previous command was a PROGRAM PAGE CACHE
(80h-15h) command; otherwise, it is prohibited.
7. OTP commands can be entered only after issuing the SET FEATURES command with the
feature address.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Command Definitions
Table 8: Two-Plane Command Set
Note 4 applies to all parameters and conditions
Number of
ComValid
mand
Address
Command
Cycle #1
Cycles
Command
Cycle #2
Number of
Valid
Address
Cycles
Command
Cycle #3
Valid While Valid While
Selected
Other LUNs
LUN is Busy
are Busy Notes
READ PAGE TWOPLANE
00h
5
00h
5
30h
No
Yes
READ FOR TWOPLANE INTERNAL
DATA MOVE
00h
5
00h
5
35h
No
Yes
1
RANDOM DATA
READ TWO-PLANE
06h
5
E0h
–
–
No
Yes
2
PROGRAM PAGE
TWO-PLANE
80h
5
11h-80h
5
10h
No
Yes
PROGRAM PAGE
CACHE MODE TWOPLANE
80h
5
11h-80h
5
15h
No
Yes
PROGRAM FOR
TWO-PLANE INTERNAL DATA MOVE
85h
5
11h-85h
5
10h
No
Yes
1
BLOCK ERASE TWOPLANE
60h
3
D1h-60h
3
D0h
No
Yes
3
Notes:
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1. Do not cross plane boundaries when using READ FOR INTERNAL DATA MOVE TWOPLANE or PROGRAM FOR TWO-PLANE INTERNAL DATA MOVE.
2. The RANDOM DATA READ TWO-PLANE command is limited to use with the PAGE READ
TWO-PLANE command.
3. D1h command can be omitted.
4. These commands supported only with ECC disabled.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Reset Operations
Reset Operations
RESET (FFh)
The RESET command is used to put the memory device into a known condition and to
abort the command sequence in progress.
READ, PROGRAM, and ERASE commands can be aborted while the device is in the busy
state. The contents of the memory location being programmed or the block being
erased are no longer valid. The data may be partially erased or programmed, and is invalid. The command register is cleared and is ready for the next command. The data
register and cache register contents are marked invalid.
The status register contains the value E0h when WP# is HIGH; otherwise it is written
with a 60h value. R/B# goes LOW for tRST after the RESET command is written to the
command register.
The RESET command must be issued to all CE#s as the first command after power-on.
The device will be busy for a maximum of 1ms.
Figure 25: RESET (FFh) Operation
Cycle type
I/O[7:0]
Command
FF
tWB
tRST
R/B#
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Identification Operations
Identification Operations
READ ID (90h)
The READ ID (90h) command is used to read identifier codes programmed into the target. This command is accepted by the target only when all die (LUNs) on the target are
idle.
Writing 90h to the command register puts the target in read ID mode. The target stays in
this mode until another valid command is issued.
When the 90h command is followed by an 00h address cycle, the target returns a 5-byte
identifier code that includes the manufacturer ID, device configuration, and part-specific information.
When the 90h command is followed by a 20h address cycle, the target returns the 4-byte
ONFI identifier code.
Figure 26: READ ID (90h) with 00h Address Operation
Cycle type
Command
Address
DOUT
DOUT
DOUT
DOUT
DOUT
Byte 0
Byte 1
Byte 2
Byte 3
Byte 4
tWHR
I/O[7:0]
90h
00h
1. See READ ID Parameter tables for byte definitions.
Note:
Figure 27: READ ID (90h) with 20h Address Operation
Cycle type
Command
Address
DOUT
DOUT
DOUT
DOUT
4Fh
4Eh
46h
49h
tWHR
I/O[7:0]
Note:
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90h
20h
1. See READ ID Parameter tables for byte definitions.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
READ ID Parameter Tables
READ ID Parameter Tables
Table 9: READ ID Parameters for Address 00h
b = binary; h = hexadecimal
Options
I/07
I/06
I/05
I/04
I/03
I/02
I/01
I/00
Value
Micron
0
0
1
0
1
1
0
0
2Ch
MT29F4G08ABADA
4Gb, x8, 3.3V
1
1
0
1
1
1
0
0
DCh
MT29F4G16ABADA
4Gb, x16, 3.3V
1
1
0
0
1
1
0
0
CCh
MT29F4G08ABBDA
4Gb, x8, 1.8V
1
0
1
0
1
1
0
0
ACh
MT29F4G16ABBDA
4Gb, x16, 1.8V
1
0
1
1
1
1
0
0
BCh
MT29F8G08ADBDA
8Gb, x8, 1.8V
1
0
1
0
0
0
1
1
A3h
MT29F8G16ADBDA
8Gb, x16, 1.8V
1
0
1
1
0
0
1
1
B3h
MT29F8G08ADADA
8Gb, x8, 3.3V
1
1
0
1
0
0
1
1
D3h
MT29F8G16ADADA
8Gb, x16, 3.3V
1
1
0
0
0
0
1
1
C3h
MT29F16G08AJADA
16Gb, x8, 3.3V
1
1
0
1
0
0
1
1
D3h
1
0
0
00b
2
0
1
01b
Byte 0 – Manufacturer ID
Manufacturer
Byte 1 – Device ID
Byte 2
Number of die per CE
Cell type
SLC
0
Number of simultaneously
programmed pages
2
Interleaved operations between multiple die
Not supported
Cache programming
Supported
1
Byte value
MT29F4G08ABADA
1
0
0
1
0
0
0
0
90h
MT29F4G16ABADA
1
0
0
1
0
0
0
0
90h
MT29F4G08ABBDA
1
0
0
1
0
0
0
0
90h
MT29F4G16ABBDA
1
0
0
1
0
0
0
0
90h
MT29F8G08ADBDA
1
1
0
1
0
0
0
1
D1h
MT29F8G16ADBDA
1
1
0
1
0
0
0
1
D1h
MT29F8G08ADADA
1
1
0
1
0
0
0
1
D1h
MT29F8G16ADADA
1
1
0
1
0
0
0
1
D1h
MT29F16G08AJADA
1
1
0
1
0
0
0
1
D1h
0
1
01b
0
0
00b
1
01b
0
0b
1b
Byte 3
Page size
2KB
Spare area size (bytes)
64B
Block size (without spare)
128KB
Organization
x8
0
0b
x16
1
1b
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1
0
37
1
1b
01b
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© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
READ ID Parameter Tables
Table 9: READ ID Parameters for Address 00h (Continued)
b = binary; h = hexadecimal
Options
Serial access
(MIN)
I/07
I/06
I/05
I/04
I/03
I/02
I/01
I/00
Value
1.8V
25ns
0
0
0xxx0b
3.3V
20ns
1
0
1xxx0b
MT29F4G08ABADA
1
0
0
1
0
1
0
1
95h
MT29F4G16ABADA
1
1
0
1
0
1
0
1
D5h
MT29F4G08ABBDA
0
0
0
1
0
1
0
1
15h
MT29F4G16ABBDA
0
1
0
1
0
1
0
1
55h
MT29F8G08ADBDA
0
0
0
1
0
1
0
1
15h
MT29F8G16ADBDA
0
1
0
1
0
1
0
1
55h
MT29F8G08ADADA
1
0
0
1
0
1
0
1
95h
MT29F8G16ADADA
1
1
0
1
0
1
0
1
D5h
MT29F16G08AJADA
1
0
0
1
0
1
0
1
95h
1
0
10b
Byte value
Byte 4
Internal ECC level
4-bit ECC/512 (main) +
4 (spare) + 8 (parity)
bytes
Planes per CE#
2
4
1
0
01b
10b
2Gb
Internal ECC
ECC disabled
0
0b
ECC enabled
1
1b
MT29F4G08ABADA
0
1
0
1
0
1
1
0
56h
MT29F4G16ABADA
0
1
0
1
0
1
1
0
56h
MT29F4G08ABBDA
0
1
0
1
0
1
1
0
56h
MT29F4G16ABBDA
0
1
0
1
0
1
1
0
56h
MT29F8G08ADBDA
0
1
0
1
1
0
1
0
5Ah
MT29F8G16ADBDA
0
1
0
1
1
0
1
0
5Ah
MT29F8G08ADADA
0
1
0
1
1
0
1
0
5Ah
MT29F8G16ADADA
0
1
0
1
1
0
1
0
5Ah
MT29F16G08AJADA
0
1
0
1
1
0
1
0
5Ah
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38
0
1
Plane size
Byte value
1
0
1
101b
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
READ ID Parameter Tables
Table 10: READ ID Parameters for Address 20h
h = hexadecimal
Byte
Options
I/07
I/06
I/05
I/04
I/03
I/02
I/01
I/00
Value
0
“O”
0
1
0
0
1
1
1
1
4Fh
1
“N”
0
1
0
0
1
1
1
0
4Eh
2
“F”
0
1
0
0
0
1
1
0
46h
3
“I”
0
1
0
0
1
0
0
1
49h
4
Undefined
X
X
X
X
X
X
X
X
XXh
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© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
READ PARAMETER PAGE (ECh)
READ PARAMETER PAGE (ECh)
The READ PARAMETER PAGE (ECh) command is used to read the ONFI parameter page
programmed into the target. This command is accepted by the target only when all die
(LUNs) on the target are idle.
Writing ECh to the command register puts the target in read parameter page mode. The
target stays in this mode until another valid command is issued.
When the ECh command is followed by an 00h address cycle, the target goes busy for tR.
If the READ STATUS (70h) command is used to monitor for command completion, the
READ MODE (00h) command must be used to re-enable data output mode. Use of the
READ STATUS ENHANCED (78h) command is prohibited while the target is busy and
during data output.
To insure data integrity, x8 devices contain at least eight copies of the parameter page,
and x16 devices contain at least four copies of the parameter page. Each parameter
page is 256 bytes. If the initial READ PARAMETER PAGE (ECh) command fails to retrieve
a correct copy of the parameter page, the command can be reissued until a correct copy
is retrieved. If desired, the RANDOM DATA READ (05h-E0h) command can be used to
change the location of data output.
Figure 28: READ PARAMETER (ECh) Operation
Cycle type
I/O[7:0]
Command
Address
ECh
00h
tWB
tR
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
P00
P10
…
P01
P11
…
tRR
R/B#
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© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Parameter Page Data Structure Tables
Parameter Page Data Structure Tables
Table 11: Parameter Page Data Structure
Byte
Description
Value
0–3
Parameter page signature
4Fh, 4Eh, 46h, 49h
4–5
Revision number
6–7
Features supported
8–9
02h, 00h
MT29F4G08ABBDAH4
18h, 00h
MT29F4G08ABBDAHC
18h, 00h
MT29F4G16ABBDAHC
19h, 00h
MT29F4G16ABBDAH4
19h, 00h
MT29F8G08ADBDAH4
1Ah, 00h
MT29F8G16ADBDAH4
1Bh, 00h
MT29F4G08ABADAWP
18h, 00h
MT29F4G08ABADAH4
18h, 00h
MT29F4G16ABADAWP
19h, 00h
MT29F4G16ABADAH4
19h, 00h
MT29F8G08ADADAH4
1Ah, 00h
MT29F8G16ADADAH4
1Bh, 00h
MT29F16G08AJADAWP
1Ah, 00h
Optional commands supported
3Fh, 00h
10–31
Reserved
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h
32–43
Device manufacturer
4Dh, 49h, 43h, 52h, 4Fh, 4Eh, 20h, 20h, 20h, 20h, 20h,
20h
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© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Parameter Page Data Structure Tables
Table 11: Parameter Page Data Structure (Continued)
Byte
Description
44–63
Device model
64
Value
MT29F4G08ABBDAH4
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 30h, 38h, 41h, 42h,
42h, 44h, 41h, 48h, 34h, 20h, 20h, 20h, 20h
MT29F4G08ABBDAHC
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 30h, 38h, 41h, 42h,
42h, 44h, 41h, 48h, 43h, 20h, 20h, 20h, 20h
MT29F4G16ABBDAHC
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 31h, 36h, 41h, 42h,
42h, 44h, 41h, 48h, 43h, 20h, 20h, 20h, 20h
MT29F4G16ABBDAH4
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 31h, 36h, 41h, 42h,
42h, 44h, 41h, 48h, 34h, 20h, 20h, 20h, 20h
MT29F8G08ADBDAH4
4Dh, 54h, 32h, 39h, 46h, 38h, 47h, 30h, 38h, 41h, 44h,
42h, 44h, 41h, 48h, 34h, 20h, 20h, 20h, 20h
MT29F8G16ADBDAH4
4Dh, 54h, 32h, 39h, 46h, 38h, 47h, 31h, 36h, 41h, 44h,
42h, 44h, 41h, 48h, 34h, 20h, 20h, 20h, 20h
MT29F4G08ABADAWP
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 30h, 38h, 41h, 42h,
41h, 44h, 41h, 57h, 50h, 20h, 20h, 20h, 20
MT29F4G08ABADAH4
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 30h, 38h, 41h, 42h,
41h, 44h, 41h, 48h, 34h, 20h, 20h, 20h, 20h
MT29F4G16ABADAWP
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 31h, 36h, 41h, 42h,
41h, 44h, 41h, 57h, 50h, 20h, 20h, 20h, 20h
MT29F4G16ABADAH4
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 31h, 36h, 41h, 42h,
41h, 44h, 41h, 48h, 34h, 20h, 20h, 20h, 20h
MT29F8G08ADADAH4
4Dh, 54h, 32h, 39h, 46h, 38h, 47h, 30h, 38h, 41h, 44h,
41h, 44h, 41h, 48h, 34h, 20h, 20h, 20h, 20h
MT29F8G16ADADAH4
4Dh, 54h, 32h, 39h, 46h, 38h, 47h, 31h, 36h, 41h, 44h,
41h, 44h, 41h, 48h, 34h, 20h, 20h, 20h, 20h
MT29F16G08AJADAWP
4Dh, 54h, 32h, 39h, 46h, 31h, 36h, 47h, 30h, 38h, 41h,
4Ah, 41h, 44h, 41h, 57h, 50h, 20h, 20h, 20h
Manufacturer ID
2Ch
65–66
Date code
00h, 00h
67–79
Reserved
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h
80–83
Number of data bytes per page
00h, 08h, 00h, 00h
84–85
Number of spare bytes per page
40h, 00h
86–89
Number of data bytes per partial page
00h, 02h, 00h, 00h
90–91
Number of spare bytes per partial page
10h, 00h
92–95
Number of pages per block
40h, 00h, 00h, 00h
96–99
Number of blocks per unit
00h, 10h, 00h, 00h
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Parameter Page Data Structure Tables
Table 11: Parameter Page Data Structure (Continued)
Byte
100
Description
Number of logical units
Value
MT29F4G08ABBDAH4
01h
MT29F4G08ABBDAHC
01h
MT29F4G16ABBDAHC
01h
MT29F4G16ABBDAH4
01h
MT29F8G08ADBDAH4
02h
MT29F8G16ADBDAH4
02h
MT29F4G08ABADAWP
01h
MT29F4G08ABADAH4
01h
MT29F4G16ABADAWP
01h
MT29F4G16ABADAH4
01h
MT29F8G08ADADAH4
02h
MT29F8G16ADADAH4
02h
MT29F16G08AJADAWP
04h
101
Number of address cycles
23h
102
Number of bits per cell
01h
103–104 Bad blocks maximum per unit
50h, 00h
105–106 –
–
107
Guaranteed valid blocks at beginning of target
01h
108–109 Block endurance for guaranteed valid blocks
00h, 00h
110
Number of programs per page
04h
111
Partial programming attributes
00h
112
Number of bits ECC bits
04h
113
Number of interleaved address bits
01h
114
Interleaved operation attributes
0Eh
115–127 Reserved
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00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h
43
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© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Parameter Page Data Structure Tables
Table 11: Parameter Page Data Structure (Continued)
Byte
128
Description
I/O pin capacitance
129–130 Timing mode support
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Value
MT29F4G08ABBDAH4
0Ah
MT29F4G08ABBDAHC
0Ah
MT29F4G16ABBDAHC
0Ah
MT29F4G16ABBDAH4
0Ah
MT29F8G08ADBDAH4
14h
MT29F8G16ADBDAH4
14h
MT29F4G08ABADAWP
0Ah
MT29F4G08ABADAH4
0Ah
MT29F4G16ABADAWP
0Ah
MT29F4G16ABADAH4
0Ah
MT29F8G08ADADAH4
14h
MT29F8G16ADADAH4
14h
MT29F16G08AJADAWP
28h
MT29F4G08ABBDAH4
1Fh, 00h
MT29F4G08ABBDAHC
1Fh, 00h
MT29F4G16ABBDAHC
1Fh, 00h
MT29F4G16ABBDAH4
1Fh, 00h
MT29F8G08ADBDAH4
1Fh, 00h
MT29F8G16ADBDAH4
1Fh, 00h
MT29F4G08ABADAWP
3Fh, 00h
MT29F4G08ABADAH4
3Fh, 00h
MT29F4G16ABADAWP
3Fh, 00h
MT29F4G16ABADAH4
3Fh, 00h
MT29F8G08ADADAH4
3Fh, 00h
MT29F8G16ADADAH4
3Fh, 00h
MT29F16G08AJADAWP
3Fh, 00h
44
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Parameter Page Data Structure Tables
Table 11: Parameter Page Data Structure (Continued)
Byte
Description
131–132 Program cache timing
mode support
133–134
tPROG
135–136
tBERS
137–138
tR
139–140
tCCs
Value
MT29F4G08ABBDAH4
1Fh, 00h
MT29F4G08ABBDAHC
1Fh, 00h
MT29F4G16ABBDAHC
1Fh, 00h
MT29F4G16ABBDAH4
1Fh, 00h
MT29F8G08ADBDAH4
1Fh, 00h
MT29F8G16ADBDAH4
1Fh, 00h
MT29F4G08ABADAWP
3Fh, 00h
MT29F4G08ABADAH4
3Fh, 00h
MT29F4G16ABADAWP
3Fh, 00h
MT29F4G16ABADAH4
3Fh, 00h
MT29F8G08ADADAH4
3Fh, 00h
MT29F8G16ADADAH4
3Fh, 00h
MT29F16G08AJADAWP
3Fh, 00h
(MAX) page program time
58h, 02h
(MAX) block erase time
B8h, 0Bh
(MAX) page read time
19h, 00h
(MIN)
64h, 00h
141–163 Reserved
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h
164–165 Vendor-specific revision number
01h, 00h
166–253 Vendor-specific
01h, 00h, 00h, 02h, 04h, 80h, 01h, 81h, 04h, 01h, 02h,
01h,0Ah, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h,00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h,00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h,00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h, 00h,00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h, 00h, 00h,00h, 00h, 00h, 00h
254–255 Integrity CRC
Set at test
256–511 Value of bytes 0–255
512–767 Value of bytes 0–255
768+
Additional redundant parameter pages
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
NAND Component Parameter Page Data Structure Tables
NAND Component Parameter Page Data Structure Tables
Table 12: Parameter Page Data Structure
Byte
Description
Value
0–3
Parameter page signature
4Fh, 4Eh, 46h, 49h
4–5
Revision number
6–7
Features supported
8–9
02h, 00h
MT29F4G08ABBDA3W
18h, 00h
MT29F4G16ABBDA3W
19h, 00h
MT29F8G08ADBDA3W
1Ah, 00h
MT29F8G16ADBDA3W
1Bh, 00h
MT29F4G08ABADA3W
18h, 00h
MT29F4G16ABADA3W
19h, 00h
MT29F8G08ADADA3W
1Ah, 00h
MT29F8G16ADADA3W
1Bh, 00h
Optional commands supported
3Fh, 00h
10–31
Reserved
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h
32–43
Device manufacturer
4Dh, 49h, 43h, 52h, 4Fh, 4Eh, 20h, 20h, 20h, 20h, 20h,
20h
44–63
Device model
64
MT29F4G08ABBDA3W
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 30h, 38h, 41h, 42h,
42h, 44h, 41h, 33h, 57h, 20h, 20h, 20h, 20h
MT29F4G16ABBDA3W
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 31h, 36h, 41h, 42h,
42h, 44h, 41h, 33h, 57h, 20h, 20h, 20h, 20h
MT29F8G08ADBDA3W
4Dh, 54h, 32h, 39h, 46h, 38h, 47h, 30h, 38h, 41h, 44h,
42h, 44h, 41h, 33h, 57h, 20h, 20h, 20h, 20h
MT29F8G16ADBDA3W
4Dh, 54h, 32h, 39h, 46h, 38h, 47h, 31h, 36h, 41h, 44h,
42h, 44h, 41h, 33h, 57h, 20h, 20h, 20h, 20h
MT29F4G08ABADA3W
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 30h, 38h, 41h, 42h,
41h, 44h, 41h, 33h, 57h, 20h, 20h, 20h, 20h
MT29F4G16ABADA3W
4Dh, 54h, 32h, 39h, 46h, 34h, 47h, 31h, 36h, 41h, 42h,
41h, 44h, 41h, 33h, 57h, 20h, 20h, 20h, 20h
MT29F8G08ADADA3W
4Dh, 54h, 32h, 39h, 46h, 38h, 47h, 30h, 38h, 41h, 44h,
41h, 44h, 41h, 33h, 57h, 20h, 20h, 20h, 20h
MT29F8G16ADADA3W
4Dh, 54h, 32h, 39h, 46h, 38h, 47h, 31h, 36h, 41h, 44h,
41h, 44h, 41h, 33h, 57h, 20h, 20h, 20h, 20h
Manufacturer ID
2Ch
65–66
Date code
00h, 00h
67–79
Reserved
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h
80–83
Number of data bytes per page
00h, 08h, 00h, 00h
84–85
Number of spare bytes per page
40h, 00h
86–89
Number of data bytes per partial page
00h, 02h, 00h, 00h
90–91
Number of spare bytes per partial page
10h, 00h
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
NAND Component Parameter Page Data Structure Tables
Table 12: Parameter Page Data Structure (Continued)
Byte
Description
Value
92–95
Number of pages per block
40h, 00h, 00h, 00h
96–99
Number of blocks per unit
00h, 10h, 00h, 00h
100
Number of logical units
MT29F4G08ABBDA3W
01h
MT29F4G16ABBDA3W
01h
MT29F8G08ADBDA3W
02h
MT29F8G16ADBDA3W
02h
MT29F4G08ABADA3W
01h
MT29F4G16ABADA3W
01h
MT29F8G08ADADA3W
02h
MT29F8G16ADADA3W
02h
101
Number of address cycles
23h
102
Number of bits per cell
01h
103–104 Bad blocks maximum per unit
50h, 00h
105–106 Block endurance
01h, 05h
107
Guaranteed valid blocks at beginning of target
01h
108–109 Block endurance for guaranteed valid blocks
00h, 00h
110
Number of programs per page
04h
111
Partial programming attributes
00h
112
Number of bits ECC bits
04h
113
Number of interleaved address bits
01h
114
Interleaved operation attributes
0Eh
115–127 Reserved
128
I/O pin capacitance
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00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h
MT29F4G08ABBDA3W
0Ah
MT29F4G16ABBDA3W
0Ah
MT29F8G08ADBDA3W
14h
MT29F8G16ADBDA3W
14h
MT29F4G08ABADA3W
0Ah
MT29F4G16ABADA3W
0Ah
MT29F8G08ADADA3W
14h
MT29F8G16ADADA3W
14h
47
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
NAND Component Parameter Page Data Structure Tables
Table 12: Parameter Page Data Structure (Continued)
Byte
Description
129–130 Timing mode support
131–132 Program cache timing
mode support
133–134
tPROG
135–136
tBERS
137–138
tR
139–140
tCCs
Value
MT29F4G08ABBDA3W
1Fh, 00h
MT29F4G16ABBDA3W
1Fh, 00h
MT29F8G08ADBDA3W
1Fh, 00h
MT29F8G16ADBDA3W
1Fh, 00h
MT29F4G08ABADA3W
3Fh, 00h
MT29F4G16ABADA3W
3Fh, 00h
MT29F8G08ADADA3W
3Fh, 00h
MT29F8G16ADADA3W
3Fh, 00h
MT29F4G08ABBDA3W
1Fh, 00h
MT29F4G16ABBDA3W
1Fh, 00h
MT29F8G08ADBDA3W
1Fh, 00h
MT29F8G16ADBDA3W
1Fh, 00h
MT29F4G08ABADA3W
3Fh, 00h
MT29F4G16ABADA3W
3Fh, 00h
MT29F8G08ADADA3W
3Fh, 00h
MT29F8G16ADADA3W
3Fh, 00h
(MAX) page program time
58h, 02h
(MAX) block erase time
B8h, 0Bh
(MAX) page read time
19h, 00h
(MIN)
64h, 00h
141–163 Reserved
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h
164–165 Vendor-specific revision number
01h, 00h
166–253 Vendor-specific
01h, 00h, 00h, 02h, 04h, 80h, 01h, 81h, 04h, 01h, 02h,
01h,0Ah, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h,00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h,00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h,00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h,00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h, 00h,00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h, 00h, 00h,00h, 00h, 00h, 00h
254–255 Integrity CRC
Set at test
256–511 Value of bytes 0–255
512–767 Value of bytes 0–255
768+
Additional redundant parameter pages
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
READ UNIQUE ID (EDh)
READ UNIQUE ID (EDh)
The READ UNIQUE ID (EDh) command is used to read a unique identifier programmed
into the target. This command is accepted by the target only when all die (LUNs) on the
target are idle.
Writing EDh to the command register puts the target in read unique ID mode. The target stays in this mode until another valid command is issued.
When the EDh command is followed by an 00h address cycle, the target goes busy for
If the READ STATUS (70h) command is used to monitor for command completion,
the READ MODE (00h) command must be used to re-enable data output mode.
tR.
After tR completes, the host enables data output mode to read the unique ID. When the
asynchronous interface is active, one data byte is output per RE# toggle.
Sixteen copies of the unique ID data are stored in the device. Each copy is 32 bytes. The
first 16 bytes of a 32-byte copy are unique data, and the second 16 bytes are the complement of the first 16 bytes. The host should XOR the first 16 bytes with the second 16
bytes. If the result is 16 bytes of FFh, then that copy of the unique ID data is correct. In
the event that a non-FFh result is returned, the host can repeat the XOR operation on a
subsequent copy of the unique ID data. If desired, the RANDOM DATA READ (05h-E0h)
command can be used to change the data output location.
The upper eight I/Os on a x16 device are not used and are a “Don’t Care” for x16 devices.
Figure 29: READ UNIQUE ID (EDh) Operation
Cycle type
I/O[7:0]
Command
Address
EDh
00h
tWB
tR
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
U00
U10
…
U01
U11
…
tRR
R/B#
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Feature Operations
Feature Operations
The SET FEATURES (EFh) and GET FEATURES (EEh) commands are used to modify the
target's default power-on behavior. These commands use a one-byte feature address to
determine which subfeature parameters will be read or modified. Each feature address
(in the 00h to FFh range) is defined in below. The SET FEATURES (EFh) command
writes subfeature parameters (P1–P4) to the specified feature address. The GET FEATURES command reads the subfeature parameters (P1–P4) at the specified feature address.
When a feature is set, by default it remains active until the device is power cycled. It is
volatile. Unless otherwise specified in the features table, once a device is set it remains
set, even if a RESET (FFh) command is issued. GET/SET FEATURES commands can be
used after required RESET to enable features before system BOOT ROM process.
Internal ECC can be enabled/disabled using SET FEATURES (EFh). The SET FEATURES
command (EFh), followed by address 90h, followed by four data bytes (only the first data byte is used) will enable/disable internal ECC.
The sequence to enable internal ECC with SET FEATURES is EFh(cmd)-90h(addr)08h(data)-00h(data)-00h(data)-00h(data)-wait(tFEAT).
The sequence to disable internal ECC with SET FEATURES is EFh(cmd)-90h(addr)00h(data)-00h(data)-00h(data)-00h(data)-wait(tFEAT). The GET FEATURES command
is EEh.
Table 13: Feature Address Definitions
Feature Address
Reserved
01h
Timing mode
02h–7Fh
Reserved
80h
Programmable output drive strength
81h
Programmable RB# pull-down strength
82h–FFh
90h
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Definition
00h
Reserved
Array operation mode
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Feature Operations
Table 14: Feature Address 90h – Array Operation Mode
Subfeature
Parameter
Options
1/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Value
Notes
1
P1
Operation
mode option
Normal
Reserved (0)
0
00h
OTP
operation
Reserved (0)
1
01h
1
1
03h
OTP
protection
Reserved (0)
Disable ECC
Reserved (0)
0
0
0
0
00h
1
Enable ECC
Reserved (0)
1
0
0
0
08h
1
P2
Reserved
Reserved (0)
00h
Reserved (0)
00h
Reserved (0)
00h
P3
Reserved
P4
Reserved
1. These bits are reset to 00h on power cycle.
Note:
SET FEATURES (EFh)
The SET FEATURES (EFh) command writes the subfeature parameters (P1–P4) to the
specified feature address to enable or disable target-specific features. This command is
accepted by the target only when all die (LUNs) on the target are idle.
Writing EFh to the command register puts the target in the set features mode. The target
stays in this mode until another command is issued.
The EFh command is followed by a valid feature address. The host waits for tADL before
the subfeature parameters are input. When the asynchronous interface is active, one
subfeature parameter is latched per rising edge of WE#.
After all four subfeature parameters are input, the target goes busy for tFEAT. The READ
STATUS (70h) command can be used to monitor for command completion.
Feature address 01h (timing mode) operation is unique. If SET FEATURES is used to
modify the interface type, the target will be busy for tITC.
Figure 30: SET FEATURES (EFh) Operation
Cycle type
Command
Address
DIN
DIN
DIN
DIN
P1
P2
P3
P4
tADL
I/O[7:0]
EFh
FA
tWB
tFEAT
R/B#
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Feature Operations
GET FEATURES (EEh)
The GET FEATURES (EEh) command reads the subfeature parameters (P1–P4) from the
specified feature address. This command is accepted by the target only when all die
(LUNs) on the target are idle.
Writing EEh to the command register puts the target in get features mode. The target
stays in this mode until another valid command is issued.
When the EEh command is followed by a feature address, the target goes busy for tFEAT.
If the READ STATUS (70h) command is used to monitor for command completion, the
READ MODE (00h) command must be used to re-enable data output mode.
After tFEAT completes, the host enables data output mode to read the subfeature parameters.
Figure 31: GET FEATURES (EEh) Operation
Cycle type
I/Ox
Command
Address
EEh
FA
tWB
tFEAT
DOUT
DOUT
DOUT
DOUT
P1
P2
P3
P4
tRR
R/B#
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Feature Operations
Table 15: Feature Addresses 01h: Timing Mode
Subfeature
Parameter
Options
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Value
Notes
P1
Timing mode
Mode 0
(default)
Reserved (0)
0
0
0
00h
1, 2
Mode 1
Reserved (0)
0
0
1
01h
2
Mode 2
Reserved (0)
0
1
0
02h
2
Mode 3
Reserved (0)
0
1
1
03h
2
Mode 4
Reserved (0)
1
0
0
04h
2
Mode 5
Reserved (0)
1
0
1
05h
3
P2
Reserved (0)
00h
Reserved (0)
00h
Reserved (0)
00h
P3
P4
Notes:
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1. The timing mode feature address is used to change the default timing mode. The timing
mode should be selected to indicate the maximum speed at which the device will receive commands, addresses, and data cycles. The five supported settings for the timing
mode are shown. The default timing mode is mode 0. The device returns to mode 0
when the device is power cycled. Supported timing modes are reported in the parameter page.
2. Supported for both 1.8V and 3.3V.
3. Supported for 3.3V only.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Feature Operations
Table 16: Feature Addresses 80h: Programmable I/O Drive Strength
Subfeature
Parameter
Options
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Value
Notes
1
P1
I/O drive strength
Full (default)
Reserved (0)
0
0
00h
Three-quarters
Reserved (0)
0
1
01h
One-half
Reserved (0)
1
0
02h
One-quarter
Reserved (0)
1
1
03h
P2
Reserved (0)
00h
Reserved (0)
00h
Reserved (0)
00h
P3
P4
Note:
1. The programmable drive strength feature address is used to change the default I/O
drive strength. Drive strength should be selected based on expected loading of the
memory bus. This table shows the four supported output drive strength settings. The
default drive strength is full strength. The device returns to the default drive strength
mode when the device is power cycled. AC timing parameters may need to be relaxed if
I/O drive strength is not set to full.
Table 17: Feature Addresses 81h: Programmable R/B# Pull-Down Strength
Subfeature
Parameter
Options
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Value
Notes
Full (default)
0
0
00h
1
Three-quarters
0
1
01h
One-half
1
0
02h
One-quarter
1
1
03h
P1
R/B# pull-down
strength
P2
Reserved (0)
00h
Reserved (0)
00h
Reserved (0)
00h
P3
P4
Note:
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1. This feature address is used to change the default R/B# pull-down strength. Its strength
should be selected based on the expected loading of R/B#. Full strength is the default,
power-on value.
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Status Operations
Status Operations
Each die (LUN) provides its status independently of other die (LUNs) on the same target
through its 8-bit status register.
After the READ STATUS (70h) or READ STATUS ENHANCED (78h) command is issued,
status register output is enabled. The contents of the status register are returned on I/
O[7:0] for each data output request.
When the asynchronous interface is active and status register output is enabled,
changes in the status register are seen on I/O[7:0] as long as CE# and RE# are LOW; it is
not necessary to toggle RE# to see the status register update.
While monitoring the status register to determine when a data transfer from the Flash
array to the data register (tR) is complete, the host must issue the READ MODE (00h)
command to disable the status register and enable data output (see Read Operations).
The READ STATUS (70h) command returns the status of the most recently selected die
(LUN). To prevent data contention during or following an interleaved die (multi-LUN)
operation, the host must enable only one die (LUN) for status output by using the READ
STATUS ENHANCED (78h) command (see Interleaved Die (Multi-LUN) Operations).
With internal ECC enabled, a READ STATUS command is required after completion of
the data transfer (tR_ECC) to determine whether an uncorrectable read error occurred.
Table 18: Status Register Definition
SR
Bit
Program
Page
Program Page
Cache Mode
Page Read
Page Read
Cache Mode
7
Write protect
Write protect
Write protect
Write protect
6
RDY
RDY1 cache
RDY
RDY1 cache
RDY
0 = Busy
1 = Ready
5
ARDY
ARDY2
ARDY
ARDY2
ARDY
Don't Care
4
–
–
–
–
–
Don't Care
3
–
–
Rewrite
recommended3
–
–
0 = Normal or uncorrectable
1 = Rewrite recommended
Block Erase
Description
Write protect 0 = Protected
1 = Not protected
2
–
–
–
–
–
Don't Care
1
FAILC (N - 1)
FAILC (N - 1)
Reserved
–
–
Don't Care
FAIL (N)
FAIL4
–
FAIL
0
FAIL
Notes:
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0 = Successful PROGRAM/
ERASE/READ
1 = Error in PROGRAM/
ERASE/READ
1. Status register bit 6 is 1 when the cache is ready to accept new data. R/B# follows bit 6.
2. Status register bit 5 is 0 during the actual programming operation. If cache mode is
used, this bit will be 1 when all internal operations are complete.
3. A status register bit defined as Rewrite Recommended signifies that the page includes
acertain number of READ errors per sector (512B (main) + 4B (spare) + 8B (parity). A rewriteof this page is recommended. (Up to a 4-bit error has been corrected if internal
ECC was enabled.)
4. A status register bit defined as FAIL signifies that an uncorrectable READ error has occurred.
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Status Operations
READ STATUS (70h)
The READ STATUS (70h) command returns the status of the last-selected die (LUN) on
a target. This command is accepted by the last-selected die (LUN) even when it is busy
(RDY = 0).
If there is only one die (LUN) per target, the READ STATUS (70h) command can be used
to return status following any NAND command.
In devices that have more than one die (LUN) per target, during and following interleaved die (multi-LUN) operations, the READ STATUS ENHANCED (78h) command
must be used to select the die (LUN) that should report status. In this situation, using
the READ STATUS (70h) command will result in bus contention, as two or more die
(LUNs) could respond until the next operation is issued. The READ STATUS (70h) command can be used following all single-die (LUN) operations.
Figure 32: READ STATUS (70h) Operation
Cycle type
Command
DOUT
tWHR
I/O[7:0]
70h
SR
READ STATUS ENHANCED (78h)
The READ STATUS ENHANCED (78h) command returns the status of the addressed die
(LUN) on a target even when it is busy (RDY = 0). This command is accepted by all die
(LUNs), even when they are BUSY (RDY = 0).
Writing 78h to the command register, followed by three row address cycles containing
the page, block, and LUN addresses, puts the selected die (LUN) into read status mode.
The selected die (LUN) stays in this mode until another valid command is issued. Die
(LUNs) that are not addressed are deselected to avoid bus contention.
The selected LUN's status is returned when the host requests data output. The RDY and
ARDY bits of the status register are shared for all planes on the selected die (LUN). The
FAILC and FAIL bits are specific to the plane specified in the row address.
The READ STATUS ENHANCED (78h) command also enables the selected die (LUN) for
data output. To begin data output following a READ-series operation after the selected
die (LUN) is ready (RDY = 1), issue the READ MODE (00h) command, then begin data
output. If the host needs to change the cache register that will output data, use the
RANDOM DATA READ TWO-PLANE (06h-E0h) command after the die (LUN) is ready.
Use of the READ STATUS ENHANCED (78h) command is prohibited during the poweron RESET (FFh) command and when OTP mode is enabled. It is also prohibited following some of the other reset, identification, and configuration operations. See individual
operations for specific details.
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Status Operations
Figure 33: READ STATUS ENHANCED (78h) Operation
Cycle type
Command
Address
Address
Address
DOUT
tWHR
I/Ox
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78h
R1
R2
57
R3
SR
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Column Address Operations
Column Address Operations
The column address operations affect how data is input to and output from the cache
registers within the selected die (LUNs). These features provide host flexibility for managing data, especially when the host internal buffer is smaller than the number of data
bytes or words in the cache register.
When the asynchronous interface is active, column address operations can address any
byte in the selected cache register.
RANDOM DATA READ (05h-E0h)
The RANDOM DATA READ (05h-E0h) command changes the column address of the selected cache register and enables data output from the last selected die (LUN). This
command is accepted by the selected die (LUN) when it is ready (RDY = 1; ARDY = 1). It
is also accepted by the selected die (LUN) during CACHE READ operations
(RDY = 1; ARDY = 0).
Writing 05h to the command register, followed by two column address cycles containing
the column address, followed by the E0h command, puts the selected die (LUN) into
data output mode. After the E0h command cycle is issued, the host must wait at least
tWHR before requesting data output. The selected die (LUN) stays in data output mode
until another valid command is issued.
In devices with more than one die (LUN) per target, during and following interleaved
die (multi-LUN) operations, the READ STATUS ENHANCED (78h) command must be
issued prior to issuing the RANDOM DATA READ (05h-E0h). In this situation, using the
RANDOM DATA READ (05h-E0h) command without the READ STATUS ENHANCED
(78h) command will result in bus contention because two or more die (LUNs) could
output data.
Figure 34: RANDOM DATA READ (05h-E0h) Operation
Cycle type
DOUT
DOUT
Command
Address
Address
Command
tRHW
I/O[7:0]
Dn
Dn + 1
DOUT
DOUT
DOUT
Dk
Dk + 1
Dk + 2
tWHR
05h
C1
C2
E0h
SR[6]
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Column Address Operations
RANDOM DATA READ TWO-PLANE (06h-E0h)
The RANDOM DATA READ TWO-PLANE (06h-E0h) command enables data output on
the addressed die’s (LUN’s) cache register at the specified column address. This command is accepted by a die (LUN) when it is ready (RDY = 1; ARDY = 1).
Writing 06h to the command register, followed by two column address cycles and three
row address cycles, followed by E0h, enables data output mode on the address LUN’s
cache register at the specified column address. After the E0h command cycle is issued,
the host must wait at least tWHR before requesting data output. The selected die (LUN)
stays in data output mode until another valid command is issued.
Following a two-plane read page operation, the RANDOM DATA READ TWO-PLANE
(06h-E0h) command is used to select the cache register to be enabled for data output.
After data output is complete on the selected plane, the command can be issued again
to begin data output on another plane.
In devices with more than one die (LUN) per target, after all of the die (LUNs) on the
target are ready (RDY = 1), the RANDOM DATA READ TWO-PLANE (06h-E0h) command
can be used following an interleaved die (multi-LUN) read operation. Die (LUNs) that
are not addressed are deselected to avoid bus contention.
In devices with more than one die (LUN) per target, during interleaved die (multi-LUN)
operations where more than one or more die (LUNs) are busy (RDY = 1; ARDY = 0 or
RDY = 0; ARDY = 0), the READ STATUS ENHANCED (78h) command must be issued to
the die (LUN) to be selected prior to issuing the RANDOM DATA READ TWO-PLANE
(06h-E0h). In this situation, using the RANDOM DATA READ TWO-PLANE (06h-E0h)
command without the READ STATUS ENHANCED (78h) command will result in bus
contention, as two or more die (LUNs) could output data.
If there is a need to update the column address without selecting a new cache register
or LUN, the RANDOM DATA READ (05h-E0h) command can be used instead.
Figure 35: RANDOM DATA READ TWO-PLANE (06h-E0h) Operation
Cycle
type
I/O[7:0]
DOUT
DOUT
Command
Address
Address
Address
Address
Address
Command
tRHW
Dn
Dn + 1
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DOUT
DOUT
DOUT
Dk
Dk + 1
Dk + 2
tWHR
06h
C1
C2
R1
R2
59
R3
E0h
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Column Address Operations
RANDOM DATA INPUT (85h)
The RANDOM DATA INPUT (85h) command changes the column address of the selected cache register and enables data input on the last-selected die (LUN). This command
is accepted by the selected die (LUN) when it is ready (RDY = 1; ARDY = 1). It is also accepted by the selected die (LUN) during cache program operations
(RDY = 1; ARDY = 0).
Writing 85h to the command register, followed by two column address cycles containing
the column address, puts the selected die (LUN) into data input mode. After the second
address cycle is issued, the host must wait at least tADL before inputting data. The selected die (LUN) stays in data input mode until another valid command is issued.
Though data input mode is enabled, data input from the host is optional. Data input
begins at the column address specified.
The RANDOM DATA INPUT (85h) command is allowed after the required address cycles
are specified, but prior to the final command cycle (10h, 11h, 15h) of the following commands while data input is permitted: PROGRAM PAGE (80h-10h), PROGRAM PAGE
CACHE (80h-15h), PROGRAM FOR INTERNAL DATA MOVE (85h-10h), and PROGRAM
FOR TWO-PLANE INTERNAL DATA MOVE (85h-11h).
In devices that have more than one die (LUN) per target, the RANDOM DATA INPUT
(85h) command can be used with other commands that support interleaved die (multiLUN) operations.
Figure 36: RANDOM DATA INPUT (85h) Operation
As defined for PAGE
(CACHE) PROGRAM
Cycle type
DIN
DIN
As defined for PAGE
(CACHE) PROGRAM
Command
Address
Address
DIN
DIN
DIN
Dk
Dk + 1
Dk + 2
tADL
I/O[7:0]
Dn
Dn + 1
85h
C1
C2
RDY
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Column Address Operations
PROGRAM FOR INTERNAL DATA INPUT (85h)
The PROGRAM FOR INTERNAL DATA INPUT (85h) command changes the row address
(block and page) where the cache register contents will be programmed in the NAND
Flash array. It also changes the column address of the selected cache register and enables data input on the specified die (LUN). This command is accepted by the selected
die (LUN) when it is ready (RDY = 1; ARDY = 1). It is also accepted by the selected die
(LUN) during cache programming operations (RDY = 1; ARDY = 0).
Write 85h to the command register. Then write two column address cycles and three
row address cycles. This updates the page and block destination of the selected device
for the addressed LUN and puts the cache register into data input mode. After the fifth
address cycle is issued the host must wait at least tADL before inputting data. The selected LUN stays in data input mode until another valid command is issued. Though data
input mode is enabled, data input from the host is optional. Data input begins at the
column address specified.
The PROGRAM FOR INTERNAL DATA INPUT (85h) command is allowed after the required address cycles are specified, but prior to the final command cycle (10h, 11h, 15h)
of the following commands while data input is permitted: PROGRAM PAGE (80h-10h),
PROGRAM PAGE TWO-PLANE (80h-11h), PROGRAM PAGE CACHE (80h-15h), PROGRAM FOR INTERNAL DATA MOVE (85h-10h), and PROGRAM FOR TWO-PLANE INTERNAL DATA MOVE (85h-11h). When used with these commands, the LUN address
and plane select bits are required to be identical to the LUN address and plane select
bits originally specified.
The PROGRAM FOR INTERNAL DATA INPUT (85h) command enables the host to modify the original page and block address for the data in the cache register to a new page
and block address.
In devices that have more than one die (LUN) per target, the PROGRAM FOR INTERNAL
DATA INPUT (85h) command can be used with other commands that support interleaved die (multi-LUN) operations.
The PROGRAM FOR INTERNAL DATA INPUT (85h) command can be used with the
RANDOM DATA READ (05h-E0h) or RANDOM DATA READ TWO-PLANE (06h-E0h)
commands to read and modify cache register contents in small sections prior to programming cache register contents to the NAND Flash array. This capability can reduce
the amount of buffer memory used in the host controller.
The RANDOM DATA INPUT (85h) command can be used during the PROGRAM FOR
INTERNAL DATA MOVE command sequence to modify one or more bytes of the original data. First, data is copied into the cache register using the 00h-35h command sequence, then the RANDOM DATA INPUT (85h) command is written along with the address of the data to be modified next. New data is input on the external data pins. This
copies the new data into the cache register.
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Column Address Operations
Figure 37: PROGRAM FOR INTERNAL DATA INPUT (85h) Operation
Cycle type
DIN
DIN
Command
Address
Address
Address
Address
Address
Command
DIN
DIN
DIN
Dk
Dk + 1
Dk + 2
tADL
I/O[7:0]
Dn
Dn + 1
85h
C1
C2
R1
R2
R3
10h
RDY
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Read Operations
Read Operations
The READ PAGE (00h-30h) command, when issued by itself, reads one page from the
NAND Flash array to its cache register and enables data output for that cache register.
During data output the following commands can be used to read and modify the data in
the cache registers: RANDOM DATA READ (05h-E0h) and RANDOM DATA INPUT (85h).
Read Cache Operations
To increase data throughput, the READ PAGE CACHE series (31h, 00h-31h) commands
can be used to output data from the cache register while concurrently copying a page
from the NAND Flash array to the data register.
To begin a read page cache sequence, begin by reading a page from the NAND Flash array to its corresponding cache register using the READ PAGE (00h-30h) command.
R/B# goes LOW during tR and the selected die (LUN) is busy (RDY = 0, ARDY = 0). After
tR (R/B# is HIGH and RDY = 1, ARDY = 1), issue either of these commands:
• READ PAGE CACHE SEQUENTIAL (31h) – copies the next sequential page from the
NAND Flash array to the data register
• READ PAGE CACHE RANDOM (00h-31h) – copies the page specified in this command
from the NAND Flash array to its corresponding data register
After the READ PAGE CACHE series (31h, 00h-31h) command has been issued, R/B#
goes LOW on the target, and RDY = 0 and ARDY = 0 on the die (LUN) for tRCBSY while
the next page begins copying data from the array to the data register. After tRCBSY,
R/B# goes HIGH and the die’s (LUN’s) status register bits indicate the device is busy
with a cache operation (RDY = 1, ARDY = 0). The cache register becomes available and
the page requested in the READ PAGE CACHE operation is transferred to the data register. At this point, data can be output from the cache register, beginning at column address 0. The RANDOM DATA READ (05h-E0h) command can be used to change the column address of the data output by the die (LUN).
After outputting the desired number of bytes from the cache register, either an additional READ PAGE CACHE series (31h, 00h-31h) operation can be started or the READ
PAGE CACHE LAST (3Fh) command can be issued.
If the READ PAGE CACHE LAST (3Fh) command is issued, R/B# goes LOW on the target,
and RDY = 0 and ARDY = 0 on the die (LUN) for tRCBSY while the data register is copied
into the cache register. After tRCBSY, R/B# goes HIGH and RDY = 1 and
ARDY = 1, indicating that the cache register is available and that the die (LUN) is ready.
Data can then be output from the cache register, beginning at column address 0. The
RANDOM DATA READ (05h-E0h) command can be used to change the column address
of the data being output.
For READ PAGE CACHE series (31h, 00h-31h, 3Fh), during the die (LUN) busy time,
tRCBSY, when RDY = 0 and ARDY = 0, the only valid commands are status operations
(70h, 78h) and RESET (FFh). When RDY = 1 and ARDY = 0, the only valid commands
during READ PAGE CACHE series (31h, 00h-31h) operations are status operations (70h,
78h), READ MODE (00h), READ PAGE CACHE series (31h, 00h-31h), RANDOM DATA
READ (05h-E0h), and RESET (FFh).
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Read Operations
Two-Plane Read Operations
Two-plane read page operations improve data throughput by copying data from more
than one plane simultaneously to the specified cache registers. This is done by prepending one or more READ PAGE TWO-PLANE (00h-00h-30h) commands in front of
the READ PAGE (00h-30h) command.
When the die (LUN) is ready, the RANDOM DATA READ TWO-PLANE (06h-E0h) command determines which plane outputs data. During data output, the following commands can be used to read and modify the data in the cache registers: RANDOM DATA
READ (05h-E0h) and RANDOM DATA INPUT (85h).
Two-Plane Read Cache Operations
Two-plane read cache operations can be used to output data from more than one cache
register while concurrently copying one or more pages from the NAND Flash array to
the data register. This is done by prepending READ PAGE TWO-PLANE (00h-00h-30h)
commands in front of the PAGE READ TWO-PLANE CACHE (00h-00h-31h) command.
To begin a two-plane read page cache sequence, begin by issuing a READ PAGE TWOPLANE operation using the READ PAGE TWO-PLANE (00h-00h-30h) and READ PAGE
(00h-30h) commands. R/B# goes LOW during tR and the selected die (LUN) is busy
(RDY = 0, ARDY = 0). After tR (R/B# is HIGH and RDY = 1, ARDY = 1), issue either of these
commands:
• READ PAGE CACHE SEQUENTIAL (31h) – copies the next sequential pages from the
previously addressed planes from the NAND Flash array to the data registers.
• READ PAGE TWO-PLANE (00h-00h-30h) [in some cases, followed by READ PAGE
TWO-PLANE CACHE (00h-00h-31h)] – copies the pages specified from the NAND
Flash array to the corresponding data registers.
After the READ PAGE CACHE series (31h, 00h-00h-31h) command has been issued,
R/B# goes LOW on the target, and RDY = 0 and ARDY = 0 on the die (LUN) for tRCBSY
while the next pages begin copying data from the array to the data registers. After
tRCBSY,
R/B# goes HIGH and the LUN’s status register bits indicate the device is busy with a
cache operation (RDY = 1, ARDY = 0). The cache registers become available and the pages requested in the READ PAGE CACHE operation are transferred to the data registers.
Issue the RANDOM DATA READ TWO-PLANE (06h-E0h) command to determine which
cache register will output data. After data is output, the RANDOM DATA READ TWOPLANE (06h-E0h) command can be used to output data from other cache registers. After a cache register has been selected, the RANDOM DATA READ (05h-E0h) command
can be used to change the column address of the data output.
After outputting data from the cache registers, either an additional TWO-PLANE READ
CACHE series (31h, 00h-00h-31h) operation can be started or the READ PAGE CACHE
LAST (3Fh) command can be issued.
If the READ PAGE CACHE LAST (3Fh) command is issued, R/B# goes LOW on the target,
and RDY = 0 and ARDY = 0 on the die (LUN) for tRCBSY while the data registers are copied into the cache registers. After tRCBSY, R/B# goes HIGH and RDY = 1 and ARDY = 1,
indicating that the cache registers are available and that the die (LUN) is ready. Issue the
RANDOM DATA READ TWO-PLANE (06h-E0h) command to determine which cache
register will output data. After data is output, the RANDOM DATA READ TWO-PLANE
(06h-E0h) command can be used to output data from other cache registers. After a
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Read Operations
cache register has been selected, the RANDOM DATA READ (05h-E0h) command can
be used to change the column address of the data output.
For READ PAGE CACHE series (31h, 00h-31h, 3Fh), during the die (LUN) busy time,
tRCBSY, when RDY = 0 and ARDY = 0, the only valid commands are status operations
(70h, 78h) and RESET (FFh). When RDY = 1 and ARDY = 0, the only valid commands
during READ PAGE CACHE series (31h, 00h-31h) operations are status operations (70h,
78h), READ MODE (00h), two-plane read cache series (31h, 00h-00h-30h, 00h-00h-31h),
RANDOM DATA READ (06h-E0h, 05h-E0h), and RESET (FFh).
READ MODE (00h)
The READ MODE (00h) command disables status output and enables data output for
the last-selected die (LUN) and cache register after a READ operation (00h-30h,
00h-3Ah, 00h-35h) has been monitored with a status operation (70h, 78h). This command is accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1). It is also accepted by the die (LUN) during READ PAGE CACHE (31h, 00h-31h) operations
(RDY = 1 and ARDY = 0).
In devices that have more than one die (LUN) per target, during and following interleaved die (multi-LUN) operations, the READ STATUS ENHANCED (78h) command
must be used to select only one die (LUN) prior to issuing the READ MODE (00h) command. This prevents bus contention.
READ PAGE (00h-30h)
The READ PAGE (00h–30h) command copies a page from the NAND Flash array to its
respective cache register and enables data output. This command is accepted by the die
(LUN) when it is ready (RDY = 1, ARDY = 1).
To read a page from the NAND Flash array, write the 00h command to the command
register, then write n address cycles to the address registers, and conclude with the 30h
command. The selected die (LUN) will go busy (RDY = 0, ARDY = 0) for tR as data is
transferred.
To determine the progress of the data transfer, the host can monitor the target's R/B#
signal or, alternatively, the status operations (70h, 78h) can be used. If the status operations are used to monitor the LUN's status, when the die (LUN) is ready
(RDY = 1, ARDY = 1), the host disables status output and enables data output by issuing
the READ MODE (00h) command. When the host requests data output, output begins
at the column address specified.
During data output the RANDOM DATA READ (05h-E0h) command can be issued.
When internal ECC is enabled, the READ STATUS (70h) command is required after the
completion of the data transfer (tR_ECC) to determine whether an uncorrectable read
error occured. (tR_ECC is the data transferred with internal ECC enabled.)
In devices that have more than one die (LUN) per target, during and following interleaved die (multi-LUN) operations the READ STATUS ENHANCED (78h) command
must be used to select only one die (LUN) prior to the issue of the READ MODE (00h)
command. This prevents bus contention.
The READ PAGE (00h-30h) command is used as the final command of a two-plane read
operation. It is preceded by one or more READ PAGE TWO-PLANE (00h-00h-30h) com-
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Read Operations
mands. Data is transferred from the NAND Flash array for all of the addressed planes to
their respective cache registers. When the die (LUN) is ready
(RDY = 1, ARDY = 1), data output is enabled for the cache register linked to the plane
addressed in the READ PAGE (00h-30h) command. When the host requests data output,
output begins at the column address last specified in the READ PAGE (00h-30h) command. The RANDOM DATA READ TWO-PLANE (06h-E0h) command is used to enable
data output in the other cache registers.
Figure 38: READ PAGE (00h-30h) Operation
Cycle type
I/O[7:0]
Command
Address
Address
Address
Address
Address
Command
00h
C1
C2
R1
R2
R3
30h
tWB
tR
DOUT
DOUT
DOUT
Dn
Dn+1
Dn+2
tRR
RDY
Figure 39: READ PAGE (00h-30h) Operation with Internal ECC Enabled
tR_ECC
RDY
I/O[7:0]
00h
Address
Address
Address
Address
Address
30h
70h
Status
00h
DOUT (serial access)
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
READ PAGE CACHE SEQUENTIAL (31h)
The READ PAGE CACHE SEQUENTIAL (31h) command reads the next sequential page
within a block into the data register while the previous page is output from the cache
register. This command is accepted by the die (LUN) when it is ready
(RDY = 1, ARDY = 1). It is also accepted by the die (LUN) during READ PAGE CACHE
(31h, 00h-31h) operations (RDY = 1 and ARDY = 0).
To issue this command, write 31h to the command register. After this command is issued, R/B# goes LOW and the die (LUN) is busy (RDY = 0, ARDY = 0) for tRCBSY. After
tRCBSY, R/B# goes HIGH and the die (LUN) is busy with a cache operation
(RDY = 1, ARDY = 0), indicating that the cache register is available and that the specified
page is copying from the NAND Flash array to the data register. At this point, data can
be output from the cache register beginning at column address 0. The RANDOM DATA
READ (05h-E0h) command can be used to change the column address of the data being
output from the cache register.
The READ PAGE CACHE SEQUENTIAL (31h) command can be used to cross block
boundaries. If the READ PAGE CACHE SEQUENTIAL (31h) command is issued after the
last page of a block is read into the data register, the next page read will be the next logical block in which the 31h command was issued. Do not issue the READ PAGE CACHE
SEQUENTIAL (31h) to cross die (LUN) boundaries. Instead, issue the READ PAGE
CACHE LAST (3Fh) command.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Read Operations
Figure 40: READ PAGE CACHE SEQUENTIAL (31h) Operation
Cycle type
I/O[7:0]
Command
Address x5
Command
00h
Page Address M
30h
tWB
Command
31h
tR
RR
tWB
tRCBSY
DOUT
DOUT
DOUT
Command
D0
…
Dn
31h
tWB
tRR
DOUT
D0
tRCBSY
tRR
RDY
Page M
Page M+1
READ PAGE CACHE RANDOM (00h-31h)
The READ PAGE CACHE RANDOM (00h-31h) command reads the specified block and
page into the data register while the previous page is output from the cache register.
This command is accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1). It is
also accepted by the die (LUN) during READ PAGE CACHE (31h, 00h-31h) operations
(RDY = 1 and ARDY = 0).
To issue this command, write 00h to the command register, then write n address cycles
to the address register, and conclude by writing 31h to the command register. The column address in the address specified is ignored. The die (LUN) address must match the
same die (LUN) address as the previous READ PAGE (00h-30h) command or, if applicable, the previous READ PAGE CACHE RANDOM (00h-31h) command.
After this command is issued, R/B# goes LOW and the die (LUN) is busy
(RDY = 0, ARDY = 0) for tRCBSY. After tRCBSY, R/B# goes HIGH and the die (LUN) is busy
with a cache operation (RDY = 1, ARDY = 0), indicating that the cache register is available and that the specified page is copying from the NAND Flash array to the data register. At this point, data can be output from the cache register beginning at column address 0. The RANDOM DATA READ (05h-E0h) command can be used to change the column address of the data being output from the cache register.
In devices that have more than one die (LUN) per target, during and following interleaved die (multi-LUN) operations the READ STATUS ENHANCED (78h) command followed by the READ MODE (00h) command must be used to select only one die (LUN)
and prevent bus contention.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Read Operations
Figure 41: READ PAGE CACHE RANDOM (00h-31h) Operation
Cycle type
I/O[7:0]
Command
Address x5
Command
00h
Page Address M
30h
tWB
tR
Command
Address x5
Command
00h
Page Address N
31h
tWB
RR
tRCBSY
DOUT
DOUT
DOUT
Command
D0
…
Dn
00h
tRR
RDY
Page M
1
Cycle type
I/O[7:0]
DOUT
Command
Address x5
Command
Dn
00h
Page Address P
31h
tWB
DOUT
D0
tRCBSY
tRR
RDY
Page N
1
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Read Operations
READ PAGE CACHE LAST (3Fh)
The READ PAGE CACHE LAST (3Fh) command ends the read page cache sequence and
copies a page from the data register to the cache register. This command is accepted by
the die (LUN) when it is ready (RDY = 1, ARDY = 1). It is also accepted by the die (LUN)
during READ PAGE CACHE (31h, 00h-31h) operations (RDY = 1 and ARDY = 0).
To issue the READ PAGE CACHE LAST (3Fh) command, write 3Fh to the command register. After this command is issued, R/B# goes LOW and the die (LUN) is busy
(RDY = 0, ARDY = 0) for tRCBSY. After tRCBSY, R/B# goes HIGH and the die (LUN) is
ready (RDY = 1, ARDY = 1). At this point, data can be output from the cache register, beginning at column address 0. The RANDOM DATA READ (05h-E0h) command can be
used to change the column address of the data being output from the cache register.
In devices that have more than one LUN per target, during and following interleaved die
(multi-LUN) operations the READ STATUS ENHANCED (78h) command followed by
the READ MODE (00h) command must be used to select only one die (LUN) and prevent bus contention.
Figure 42: READ PAGE CACHE LAST (3Fh) Operation
As defined for
READ PAGE CACHE
(SEQUENTIAL OR RANDOM)
Cycle type
I/O[7:0]
Command
31h
tWB
tRCBSY
DOUT
DOUT
DOUT
Command
D0
…
Dn
3Fh
tRR
tWB
tRCBSY
DOUT
DOUT
DOUT
D0
…
Dn
tRR
RDY
Page Address N
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Read Operations
READ PAGE TWO-PLANE 00h-00h-30h
The READ PAGE TWO-PLANE (00h-00h-30h) operation is similar to the PAGE READ
(00h-30h) operation. It transfers two pages of data from the NAND Flash array to the data registers. Each page must be from a different plane on the same die.
To enter the READ PAGE TWO-PLANE mode, write the 00h command to the command
register, and then write five address cycles for plane 0 (BA6 = 0). Next, write the 00h
command to the command register, and five address cycles for plane 1 (BA6 = 1). Finally, issue the 30h command. The first-plane and second-plane addresses must meet the
two-plane addressing requirements, and, in addition, they must have identical column
addresses.
After the 30h command is written, page data is transferred from both planes to their respective data registers in tR. During these transfers, R/B# goes LOW. When the transfers
are complete, R/B# goes HIGH. To read out the data from the plane 0 data register,
pulse RE# repeatedly. After the data cycle from the plane 0 address completes, issue a
RANDOM DATA READ TWO-PLANE (06h-E0h) command to select the plane 1 address,
then repeatedly pulse RE# to read out the data from the plane 1 data register.
Alternatively, the READ STATUS (70h) command can monitor data transfers. When the
transfers are complete, status register bit 6 is set to 1. To read data from the first of the
two planes, the user must first issue the RANDOM DATA READ TWO-PLANE (06h-E0h)
command and pulse RE# repeatedly.
When the data cycle is complete, issue a RANDOM DATA READ TWO-PLANE (06h-E0h)
command to select the other plane. To output the data beginning at the specified column address, pulse RE# repeatedly.
Use of the READ STATUS ENHANCED (78h) command is prohibited during and following a PAGE READ TWO-PLANE operation.
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Read Operations
Figure 43: READ PAGE TWO-PLANE (00h-00h-30h) Operation
CLE
WE#
ALE
RE#
Page address M
00h
I/Ox
Col
add 1
Col
add 2
Row
add 1
Column address J
Row
add 2
Page address M
Row
add 3
Col
add 1
00h
Plane 0 address
Col
add 2
Row
add 1
Column address J
Row
add 2
Row
add 3
30h
tR
Plane 1 address
R/B#
1
CLE
WE#
ALE
RE#
I/Ox
DOUT 0
DOUT 1
DOUT
06h
Col
add 1
Col
add 2
Row
add 1
Plane 0 data
Row
add 2
Row
add 3
Plane 1 address
E0h
DOUT 0
DOUT 1
DOUT
Plane 1 data
R/B#
1
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Program Operations
Program Operations
Program operations are used to move data from the cache or data registers to the NAND
array. During a program operation the contents of the cache and/or data registers are
modified by the internal control logic.
Within a block, pages must be programmed sequentially from the least significant page
address to the most significant page address (0, 1, 2, ….., 63). During a program operation, the contents of the cache and/or data registers are modified by the internal control
logic.
Program Operations
The PROGRAM PAGE (80h-10h) command, when not preceded by the PROGRAM PAGE
TWO-PLANE (80h-11h) command, programs one page from the cache register to the
NAND Flash array. When the die (LUN) is ready (RDY = 1, ARDY = 1), the host should
check the FAIL bit to verify that the operation has completed successfully.
Program Cache Operations
The PROGRAM PAGE CACHE (80h-15h) command can be used to improve program operation system performance. When this command is issued, the die (LUN) goes busy
(RDY = 0, ARDY = 0) while the cache register contents are copied to the data register,
and the die (LUN) is busy with a program cache operation (RDY = 1, ARDY = 0. While
the contents of the data register are moved to the NAND Flash array, the cache register
is available for an additional PROGRAM PAGE CACHE (80h-15h) or PROGRAM PAGE
(80h-10h) command.
For PROGRAM PAGE CACHE series (80h-15h) operations, during the die (LUN) busy
times, tCBSY and tLPROG, when RDY = 0 and ARDY = 0, the only valid commands are
status operations (70h, 78h) and reset (FFh). When RDY = 1 and ARDY = 0, the only valid
commands during PROGRAM PAGE CACHE series (80h-15h) operations are status operations (70h, 78h), PROGRAM PAGE CACHE (80h-15h), PROGRAM PAGE (80h-10h),
RANDOM DATA INPUT (85h), PROGRAM FOR INTERNAL DATA INPUT (85h), and RESET (FFh).
Two-Plane Program Operations
The PROGRAM PAGE TWO-PLANE (80h-11h) command can be used to improve program operation system performance by enabling multiple pages to be moved from the
cache registers to different planes of the NAND Flash array. This is done by prepending
one or more PROGRAM PAGE TWO-PLANE (80h-11h) commands in front of the PROGRAM PAGE (80h-10h) command.
Two-Plane Program Cache Operations
The PROGRAM PAGE TWO-PLANE (80h-11h) command can be used to improve program cache operation system performance by enabling multiple pages to be moved
from the cache registers to the data registers and, while the pages are being transferred
from the data registers to different planes of the NAND Flash array, free the cache registers to receive data input from the host. This is done by prepending one or more PROGRAM PAGE TWO-PLANE (80h-11h) commands in front of the PROGRAM PAGE
CACHE (80h-15h) command.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Program Operations
PROGRAM PAGE (80h-10h)
The PROGRAM PAGE (80h-10h) command enables the host to input data to a cache register, and moves the data from the cache register to the specified block and page address in the array of the selected die (LUN). This command is accepted by the die (LUN)
when it is ready (RDY = 1, ARDY = 1). It is also accepted by the die (LUN) when it is busy
with a PROGRAM PAGE CACHE (80h-15h) operation (RDY = 1, ARDY = 0).
To input a page to the cache register and move it to the NAND array at the block and
page address specified, write 80h to the command register. Unless this command has
been preceded by a PROGRAM PAGE TWO-PLANE (80h-11h) command, issuing the 80h
to the command register clears all of the cache registers' contents on the selected target.
Then write n address cycles containing the column address and row address. Data input
cycles follow. Serial data is input beginning at the column address specified. At any time
during the data input cycle the RANDOM DATA INPUT (85h) and PROGRAM FOR INTERNAL DATA INPUT (85h) commands may be issued. When data input is complete,
write 10h to the command register. The selected LUN will go busy
(RDY = 0, ARDY = 0) for tPROG as data is transferred.
To determine the progress of the data transfer, the host can monitor the target's R/B#
signal or, alternatively, the status operations (70h, 78h) may be used. When the die
(LUN) is ready (RDY = 1, ARDY = 1), the host should check the status of the FAIL bit.
In devices that have more than one die (LUN) per target, during and following interleaved die (multi-LUN) operations, the READ STATUS ENHANCED (78h) command
must be used to select only one die (LUN) for status output. Use of the READ STATUS
(70h) command could cause more than one die (LUN) to respond, resulting in bus contention.
The PROGRAM PAGE (80h-10h) command is used as the final command of a two-plane
program operation. It is preceded by one or more PROGRAM PAGE TWO-PLANE
(80h-11h) commands. Data is transferred from the cache registers for all of the addressed planes to the NAND array. The host should check the status of the operation by
using the status operations (70h, 78h).
When internal ECC is enabled, the duration of array programming time is tPROG_ECC.
During tPROG_ECC, the internal ECC generates parity bits when error detection is complete.
Figure 44: PROGRAM PAGE (80h-10h) Operation
Cycle type
Command
Address
Address
Address
Address
Address
DIN
DIN
DIN
DIN
Command
D0
D1
…
Dn
10h
Command
DOUT
70h
Status
tADL
I/O[7:0]
80h
C1
C2
R1
R2
R3
tWB
tPROG
or
tPROG_ECC
RDY
PROGRAM PAGE CACHE (80h-15h)
The PROGRAM PAGE CACHE (80h-15h) command enables the host to input data to a
cache register; copies the data from the cache register to the data register; then moves
the data register contents to the specified block and page address in the array of the selected die (LUN). After the data is copied to the data register, the cache register is availa-
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Program Operations
ble for additional PROGRAM PAGE CACHE (80h-15h) or PROGRAM PAGE (80h-10h)
commands. The PROGRAM PAGE CACHE (80h-15h) command is accepted by the die
(LUN) when it is ready (RDY =1, ARDY = 1). It is also accepted by the die (LUN) when
busy with a PROGRAM PAGE CACHE (80h-15h) operation (RDY = 1, ARDY = 0).
To input a page to the cache register to move it to the NAND array at the block and page
address specified, write 80h to the command register. Unless this command has been
preceded by a PROGRAM PAGE TWO-PLANE (80h-11h) command, issuing the 80h to
the command register clears all of the cache registers' contents on the selected target.
Then write n address cycles containing the column address and row address. Data input
cycles follow. Serial data is input beginning at the column address specified. At any time
during the data input cycle the RANDOM DATA INPUT (85h) and PROGRAM FOR INTERNAL DATA INPUT (85h) commands may be issued. When data input is complete,
write 15h to the command register. The selected LUN will go busy
(RDY = 0, ARDY = 0) for tCBSY to allow the data register to become available from a previous program cache operation, to copy data from the cache register to the data register,
and then to begin moving the data register contents to the specified page and block address.
To determine the progress of tCBSY, the host can monitor the target's R/B# signal or, alternatively, the status operations (70h, 78h) can be used. When the LUN’s status shows
that it is busy with a PROGRAM CACHE operation (RDY = 1, ARDY = 0), the host should
check the status of the FAILC bit to see if a previous cache operation was successful.
If, after tCBSY, the host wants to wait for the program cache operation to complete,
without issuing the PROGRAM PAGE (80h-10h) command, the host should monitor ARDY until it is 1. The host should then check the status of the FAIL and FAILC bits.
In devices with more than one die (LUN) per target, during and following interleaved
die (multi-LUN) operations, the READ STATUS ENHANCED (78h) command must be
used to select only one die (LUN) for status output. Use of the READ STATUS (70h) command could cause more than one die (LUN) to respond, resulting in bus contention.
The PROGRAM PAGE CACHE (80h-15h) command is used as the final command of a
two-plane program cache operation. It is preceded by one or more PROGRAM PAGE
TWO-PLANE (80h-11h) commands. Data for all of the addressed planes is transferred
from the cache registers to the corresponding data registers, then moved to the NAND
Flash array. The host should check the status of the operation by using the status operations (70h, 78h).
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Program Operations
Figure 45: PROGRAM PAGE CACHE (80h–15h) Operation (Start)
Cycle type
Command
Address
Address
Address
Address
Address
DIN
DIN
DIN
DIN
Command
D0
D1
…
Dn
15h
tADL
I/O[7:0]
80h
C1
C2
R1
R2
R3
tWB
tCBSY
RDY
1
Cycle type
Command
Address
Address
Address
Address
Address
DIN
DIN
DIN
DIN
Command
D0
D1
…
Dn
15h
tADL
I/O[7:0]
80h
C1
C2
R1
R2
R3
tWB
tCBSY
RDY
1
Figure 46: PROGRAM PAGE CACHE (80h–15h) Operation (End)
As defined for
PAGE CACHE PROGRAM
Cycle type
Command
Address
Address
Address
Address
Address
DIN
DIN
DIN
DIN
Command
D0
D1
…
Dn
15h
tADL
I/O[7:0]
80h
C1
C2
R1
R2
R3
tWB
tCBSY
RDY
1
Cycle type
Command
Address
Address
Address
Address
Address
DIN
DIN
DIN
DIN
Command
D0
D1
…
Dn
10h
tADL
I/O[7:0]
80h
C1
C2
R1
R2
R3
tWB
tLPROG
RDY
1
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Program Operations
PROGRAM PAGE TWO-PLANE (80h-11h)
The PROGRAM PAGE TWO-PLANE (80h-11h) command enables the host to input data
to the addressed plane's cache register and queue the cache register to ultimately be
moved to the NAND Flash array. This command can be issued one or more times. Each
time a new plane address is specified that plane is also queued for data transfer. To input data for the final plane and to begin the program operation for all previously
queued planes, issue either the PROGRAM PAGE (80h-10h) command or the PROGRAM
PAGE CACHE (80h-15h) command. All of the queued planes will move the data to the
NAND Flash array. This command is accepted by the die (LUN) when it is ready
(RDY = 1).
To input a page to the cache register and queue it to be moved to the NAND Flash array
at the block and page address specified, write 80h to the command register. Unless this
command has been preceded by a PROGRAM PAGE TWO-PLANE (80h-11h) command,
issuing the 80h to the command register clears all of the cache registers' contents on the
selected target. Write five address cycles containing the column address and row address; data input cycles follow. Serial data is input beginning at the column address
specified. At any time during the data input cycle, the RANDOM DATA INPUT (85h) and
PROGRAM FOR INTERNAL DATA INPUT (85h) commands can be issued. When data
input is complete, write 11h to the command register. The selected die (LUN) will go
busy (RDY = 0, ARDY = 0) for tDBSY.
To determine the progress of tDBSY, the host can monitor the target's R/B# signal or,
alternatively, the status operations (70h, 78h) can be used. When the LUN's status
shows that it is ready (RDY = 1), additional PROGRAM PAGE TWO-PLANE (80h-11h)
commands can be issued to queue additional planes for data transfer. Alternatively, the
PROGRAM PAGE (80h-10h) or PROGRAM PAGE CACHE (80h-15h) commands can be issued.
When the PROGRAM PAGE (80h-10h) command is used as the final command of a twoplane program operation, data is transferred from the cache registers to the NAND
Flash array for all of the addressed planes during tPROG. When the die (LUN) is ready
(RDY = 1, ARDY = 1), the host should check the status of the FAIL bit for each of the
planes to verify that programming completed successfully.
When the PROGRAM PAGE CACHE (80h-15h) command is used as the final command
of a program cache two-plane operation, data is transferred from the cache registers to
the data registers after the previous array operations finish. The data is then moved
from the data registers to the NAND Flash array for all of the addressed planes. This occurs during tCBSY. After tCBSY, the host should check the status of the FAILC bit for
each of the planes from the previous program cache operation, if any, to verify that programming completed successfully.
For the PROGRAM PAGE TWO-PLANE (80h-11h), PROGRAM PAGE (80h-10h), and PROGRAM PAGE CACHE (80h-15h) commands, see Two-Plane Operations for two-plane addressing requirements.
Figure 47: PROGRAM PAGE TWO-PLANE (80h–11h) Operation
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Program Operations
Cycle type
Command
Address
Address
Address
Address
Address
DIN
DIN
DIN
Command
Command
Address
D0
…
Dn
11h
80h
...
tADL
I/O[7:0]
80h
C1
C2
R1
R2
R3
tWB tDBSY
RDY
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Erase Operations
Erase Operations
Erase operations are used to clear the contents of a block in the NAND Flash array to
prepare its pages for program operations.
Erase Operations
The ERASE BLOCK (60h-D0h) command, when not preceded by the ERASE BLOCK
TWO-PLANE (60h-D1h) command, erases one block in the NAND Flash array. When the
die (LUN) is ready (RDY = 1, ARDY = 1), the host should check the FAIL bit to verify that
this operation completed successfully.
TWO-PLANE ERASE Operations
The ERASE BLOCK TWO-PLANE (60h-D1h) command can be used to further system
performance of erase operations by allowing more than one block to be erased in the
NAND array. This is done by prepending one or more ERASE BLOCK TWO-PLANE (60hD1h) commands in front of the ERASE BLOCK (60h-D0h) command. See Two-Plane
Operations for details.
ERASE BLOCK (60h-D0h)
The ERASE BLOCK (60h-D0h) command erases the specified block in the NAND Flash
array. This command is accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1).
To erase a block, write 60h to the command register. Then write three address cycles
containing the row address; the page address is ignored. Conclude by writing D0h to the
command register. The selected die (LUN) will go busy (RDY = 0, ARDY = 0) for tBERS
while the block is erased.
To determine the progress of an ERASE operation, the host can monitor the target's
R/B# signal, or alternatively, the status operations (70h, 78h) can be used. When the die
(LUN) is ready (RDY = 1, ARDY = 1) the host should check the status of the FAIL bit.
In devices that have more than one die (LUN) per target, during and following interleaved die (multi-LUN) operations, the READ STATUS ENHANCED (78h) command
must be used to select only one die (LUN) for status output. Use of the READ STATUS
(70h) command could cause more than one die (LUN) to respond, resulting in bus contention.
The ERASE BLOCK (60h-D0h) command is used as the final command of an erase twoplane operation. It is preceded by one or more ERASE BLOCK TWO-PLANE (60h-D1h)
commands. All blocks in the addressed planes are erased. The host should check the
status of the operation by using the status operations (70h, 78h). See Two-Plane Operations for two-plane addressing requirements.
Figure 48: ERASE BLOCK (60h-D0h) Operation
Cycle type
I/O[7:0]
Command
Address
Address
Address
Command
60h
R1
R2
R3
D0h
tWB
tBERS
RDY
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Erase Operations
ERASE BLOCK TWO-PLANE (60h-D1h)
The ERASE BLOCK TWO-PLANE (60h-D1h) command queues a block in the specified
plane to be erased in the NAND Flash array. This command can be issued one or more
times. Each time a new plane address is specified, that plane is also queued for a block
to be erased. To specify the final block to be erased and to begin the ERASE operation
for all previously queued planes, issue the ERASE BLOCK (60h-D0h) command. This
command is accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1).
To queue a block to be erased, write 60h to the command register, then write three address cycles containing the row address; the page address is ignored. Conclude by writing D1h to the command register. The selected die (LUN) will go busy (RDY = 0, ARDY =
0) for tDBSY.
To determine the progress of tDBSY, the host can monitor the target's R/B# signal, or
alternatively, the status operations (70h, 78h) can be used. When the LUN's status
shows that it is ready (RDY = 1, ARDY = 1), additional ERASE BLOCK TWO-PLANE (60hD1h) commands can be issued to queue additional planes for erase. Alternatively, the
ERASE BLOCK (60h-D0h) command can be issued to erase all of the queued blocks.
For two-plane addressing requirements for the ERASE BLOCK TWO-PLANE (60h-D1h)
and ERASE BLOCK (60h-D0h) commands, see Two-Plane Operations.
Figure 49: ERASE BLOCK TWO-PLANE (60h–D1h) Operation
Cycle type
I/O[7:0]
Command
Address
Address
Address
Command
60h
R1
R2
R3
D1h
tWB
Command
Address
60h
...
tDBSY
RDY
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Internal Data Move Operations
Internal Data Move Operations
Internal data move operations make it possible to transfer data within a device from
one page to another using the cache register. This is particularly useful for block management and wear leveling.
The INTERNAL DATA MOVE operation is a two-step process consisting of a READ FOR
INTERNAL DATA MOVE (00h-35h) and a PROGRAM FOR INTERNAL DATA MOVE
(85h-10h) command. To move data from one page to another on the same plane, first
issue the READ FOR INTERNAL DATA MOVE (00h-35h) command. When the die (LUN)
is ready (RDY = 1, ARDY = 1), the host can transfer the data to a new page by issuing the
PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command. When the die (LUN) is
again ready (RDY = 1, ARDY = 1), the host should check the FAIL bit to verify that this
operation completed successfully.
To prevent bit errors from accumulating over multiple INTERNAL DATA MOVE operations, it is recommended that the host read the data out of the cache register after the
READ FOR INTERNAL DATA MOVE (00h-35h) completes and prior to issuing the PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command. The RANDOM DATA READ
(05h-E0h) command can be used to change the column address. The host should check
the data for ECC errors and correct them. When the PROGRAM FOR INTERNAL DATA
MOVE (85h-10h) command is issued, any corrected data can be input. The PROGRAM
FOR INTERNAL DATA INPUT (85h) command can be used to change the column address.
It is not possible to use the READ FOR INTERNAL DATA MOVE operation to move data
from one plane to another or from one die (LUN) to another. Instead, use a READ PAGE
(00h-30h) or READ FOR INTERNAL DATA MOVE (00h-35h) command to read the data
out of the NAND, and then use a PROGRAM PAGE (80h-10h) command with data input
to program the data to a new plane or die (LUN).
Between the READ FOR INTERNAL DATA MOVE (00h-35h) and PROGRAM FOR INTERNAL DATA MOVE (85h-10h) commands, the following commands are supported: status
operations (70h, 78h) and column address operations (05h-E0h, 06h-E0h, 85h). The RESET operation (FFh) can be issued after READ FOR INTERNAL DATA MOVE (00h-35h),
but the contents of the cache registers on the target are not valid.
In devices that have more than one die (LUN) per target, once the READ FOR INTERNAL DATA MOVE (00h-35h) is issued, interleaved die (multi-LUN) operations are prohibited until after the PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command is
issued.
Two-Plane Read for Internal Data Move Operations
Two-plane internal data move read operations improve read data throughput by copying data simultaneously from more than one plane to the specified cache registers. This
is done by issuing the READ PAGE TWO-PLANE (00h-00h-30h) command or the READ
FOR INTERNAL DATA MOVE (00h-00h-35h) command.
The INTERNAL DATA MOVE PROGRAM TWO-PLANE (85h-11h) command can be used
to further system performance of PROGRAM FOR INTERNAL DATA MOVE operations
by enabling movement of multiple pages from the cache registers to different planes of
the NAND Flash array. This is done by prepending one or more PROGRAM FOR INTERNAL DATA MOVE (85h-11h) commands in front of the PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command. See Two-Plane Operations for details.
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Internal Data Move Operations
READ FOR INTERNAL DATA MOVE (00h-35h)
The READ FOR INTERNAL DATA MOVE (00h-35h) command is functionally identical to
the READ PAGE (00h-30h) command, except that 35h is written to the command register instead of 30h.
Though it is not required, it is recommended that the host read the data out of the device to verify the data prior to issuing the PROGRAM FOR INTERNAL DATA MOVE
(85h-10h) command to prevent the propagation of data errors.
If internal ECC is enabled, the data does not need to be toggled out by the host to be
corrected and moving data can then be written to a new page without data reloading,
which improves system performance.
Figure 50: READ FOR INTERNAL DATA MOVE (00h-35h) Operation
Cycle type
Command
Address
Address
Address
Address
Address
Command
00h
C1
C2
R1
R2
R3
35h
I/O[7:0]
tWB
tR
DOUT
DOUT
DOUT
Dn
Dn+1
Dn+2
tRR
RDY
Figure 51: READ FOR INTERNAL DATA MOVE (00h–35h) with RANDOM DATA READ (05h–E0h)
Cycle type
I/O[7:0]
Command
Address
Address
Address
Address
Address
Command
00h
C1
C2
R1
R2
R3
35h
tWB
tR
DOUT
DOUT
DOUT
D0
…
Dj + n
tRR
RDY
1
Cycle type
Command
Address
Address
Command
DOUT
DOUT
DOUT
Dk
Dk + 1
Dk + 2
tWHR
I/O[7:0]
05h
C1
C2
E0h
RDY
1
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Internal Data Move Operations
Figure 52: INTERNAL DATA MOVE (85h-10h) with Internal ECC Enabled
tR_ECC
tPROG_ECC
R/B#
I/O[7:0]
00h
Address
(5 cycles)
35h
70h
Source address
Status
DOUT
00h
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
85h
Address
(5 cycles)
10h
70h
Destination address
DOUT is optional
Status
00h
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
Figure 53: INTERNAL DATA MOVE (85h-10h) with RANDOM DATA INPUT with Internal ECC Enabled
tR_ECC
tPROG_ECC
R/B#
I/O[7:0]
00h
Address
(5 cycles)
35h
Source address
70h
Status
DOUT
00h
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
Address
(5 cycles) Data 85h
85h
DOUT is optional
Address
(2 cycles) Data 10h
70h
Destination address
Column address 1, 2
(Unlimitted repetitions are possible)
PROGRAM FOR INTERNAL DATA MOVE (85h–10h)
The PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command is functionally identical to the PROGRAM PAGE (80h-10h) command, except that when 85h is written to the
command register, cache register contents are not cleared.
Figure 54: PROGRAM FOR INTERNAL DATA MOVE (85h–10h) Operation
Cycle type
I/O[7:0]
Command
Address
Address
Address
Address
Address
Command
85h
C1
C2
R1
R2
R3
10h
tWB
tPROG
RDY
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Internal Data Move Operations
Figure 55: PROGRAM FOR INTERNAL DATA MOVE (85h-10h) with RANDOM DATA INPUT (85h)
Cycle type
Command
Address
Address
Address
Address
Address
DIN
DIN
Di
Di + 1
tWHR
I/O[7:0]
85h
C1
C2
R1
R2
R3
RDY
1
Cycle type
Command
Address
Address
DIN
DIN
DIN
Command
Dj
Dj + 1
Dj + 2
10h
tWHR
I/O[7:0]
85h
C1
C2
tWB
tPROG
RDY
1
PROGRAM FOR INTERNAL DATA MOVE TWO-PLANE (85h-11h)
The PROGRAM FOR INTERNAL DATA MOVE TWO-PLANE (85h-11h) command is functionally identical to the PROGRAM PAGE TWO-PLANE (85h-11h) command, except that
when 85h is written to the command register, cache register contents are not cleared.
See Program Operations for further details.
Figure 56: PROGRAM FOR INTERNAL DATA MOVE TWO-PLANE (85h-11h) Operation
Cycle type
Command
Address
Address
Address
Address
Address
DIN
DIN
DIN
Command
Command
Address
D0
…
Dn
11h
85h
...
tADL
I/O[7:0]
85h
C1
C2
R1
R2
R3
tWB tDBSY
RDY
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Block Lock Feature
Block Lock Feature
The block lock feature protects either the entire device or ranges of blocks from being
programmed and erased. Using the block lock feature is preferable to using WP# to prevent PROGRAM and ERASE operations.
Block lock is enabled and disabled at power-on through the LOCK pin. At power-on, if
LOCK is LOW, all BLOCK LOCK commands are disabled. However if LOCK is HIGH at
power-on, the BLOCK LOCK commands are enabled and, by default, all the blocks on
the device are protected, or locked, from PROGRAM and ERASE operations, even if WP#
is HIGH.
Before the contents of the device can be modified, the device must first be unlocked.
Either a range of blocks or the entire device may be unlocked. PROGRAM and ERASE
operations complete successfully only in the block ranges that have been unlocked.
Blocks, once unlocked, can be locked again to protect them from further PROGRAM
and ERASE operations.
Blocks that are locked can be protected further, or locked tight. When locked tight, the
device’s blocks can no longer be locked or unlocked.
WP# and Block Lock
The following is true when the block lock feature is enabled:
• Holding WP# LOW locks all blocks, provided the blocks are not locked tight.
• If WP# is held LOW to lock blocks, then returned to HIGH, a new UNLOCK command
must be issued to unlock blocks.
UNLOCK (23h-24h)
By default at power-on, if LOCK is HIGH, all the blocks are locked and protected from
PROGRAM and ERASE operations. The UNLOCK (23h) command is used to unlock a
range of blocks. Unlocked blocks have no protection and can be programmed or erased.
The UNLOCK command uses two registers, a lower boundary block address register and
an upper boundary block address register, and the invert area bit to determine what
range of blocks are unlocked. When the invert area bit = 0, the range of blocks within
the lower and upper boundary address registers are unlocked. When the invert area bit
= 1, the range of blocks outside the boundaries of the lower and upper boundary address registers are unlocked. The lower boundary block address must be less than the
upper boundary block address. The figures below show examples of how the lower and
upper boundary address registers work with the invert area bit.
To unlock a range of blocks, issue the UNLOCK (23h) command followed by the appropriate address cycles that indicate the lower boundary block address. Then issue the
24h command followed by the appropriate address cycles that indicate the upper boundary block address. The least significant page address bit, PA0, should be set to 1 if setting the invert area bit; otherwise, it should be 0. The other page address bits should be
0.
Only one range of blocks can be specified in the lower and upper boundary block address registers. If after unlocking a range of blocks the UNLOCK command is again issued, the new block address range determines which blocks are unlocked. The previous
unlocked block address range is not retained.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Block Lock Feature
Figure 57: Flash Array Protected: Invert Area Bit = 0
Block 4095
Block 4094
Block 4093
Block 4092
Block 4091
Block 4090
Block 4089
Block 4088
Block. 4087
..
..
..
..
..
..
.
Block 0002
Block 0001
Block 0000
Protected
area
FFCh
Upper block boundary
FF8h
Lower block boundary
Unprotected
area
Protected
area
Figure 58: Flash Array Protected: Invert Area Bit = 1
Block 4095
Block 4094
Block 4093
Block 4092
Block 4091
Block 4090
Block 4089
Block 4088
Block. 4087
..
..
..
..
..
..
.
Block 0002
Block 0001
Block 0000
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Unprotected
Area
FFCh
Upper block boundary
FF8h
Lower block boundary
Protected
area
Unprotected
area
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Block Lock Feature
Table 19: Block Lock Address Cycle Assignments
I/O[15:8]1
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
First
LOW
BA7
BA6
LOW
LOW
LOW
LOW
LOW
Invert area bit2
Second
LOW
BA15
BA14
BA13
BA12
BA11
BA10
BA9
BA8
Third
LOW
LOW
LOW
LOW
LOW
LOW
LOW
BA17
BA16
ALE Cycle
1. I/O[15:8] is applicable only for x16 devices.
2. Invert area bit is applicable for 24h command; it may be LOW or HIGH for 23h command.
Notes:
Figure 59: UNLOCK Operation
WP#
CLE
CE#
WE#
ALE
RE#
I/Ox
23h
Unlock
Block
Block
Block
add 1
add 2
add 3
Lower boundary
24h
Block
Block
Block
add 1
add 2
add 3
Upper boundary
R/B#
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Block Lock Feature
LOCK (2Ah)
By default at power-on, if LOCK is HIGH, all the blocks are locked and protected from
PROGRAM and ERASE operations. If portions of the device are unlocked using the UNLOCK (23h) command, they can be locked again using the LOCK (2Ah) command. The
LOCK command locks all of the blocks in the device. Locked blocks are write-protected
from PROGRAM and ERASE operations.
To lock all of the blocks in the device, issue the LOCK (2Ah) command.
When a PROGRAM or ERASE operation is issued to a locked block, R/B# goes LOW for
PROGRAM or ERASE operation does not complete. Any READ STATUS command reports bit 7 as 0, indicating that the block is protected.
tLBSY. The
The LOCK (2Ah) command is disabled if LOCK is LOW at power-on or if the device is
locked tight.
Figure 60: LOCK Operation
CLE
CE#
WE#
I/Ox
2Ah
LOCK command
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Block Lock Feature
LOCK TIGHT (2Ch)
The LOCK TIGHT (2Ch) command prevents locked blocks from being unlocked and also prevents unlocked blocks from being locked. When this command is issued, the UNLOCK (23h) and LOCK (2Ah) commands are disabled. This provides an additional level
of protection against inadvertent PROGRAM and ERASE operations to locked blocks.
To implement LOCK TIGHT in all of the locked blocks in the device, verify that WP# is
HIGH and then issue the LOCK TIGHT (2Ch) command.
When a PROGRAM or ERASE operation is issued to a locked block that has also been
locked tight, R/B# goes LOW for tLBSY. The PROGRAM or ERASE operation does not
complete. The READ STATUS (70h) command reports bit 7 as 0, indicating that the
block is protected. PROGRAM and ERASE operations complete successfully to blocks
that were not locked at the time the LOCK TIGHT command was issued.
After the LOCK TIGHT command is issued, the command cannot be disabled via a software command. Lock tight status can be disabled only by power cycling the device or
toggling WP#. When the lock tight status is disabled, all of the blocks become locked,
the same as if the LOCK (2Ah) command had been issued.
The LOCK TIGHT (2Ch) command is disabled if LOCK is LOW at power-on.
Figure 61: LOCK TIGHT Operation
LOCK
WP#
CLE
CE#
WE#
I/Ox
2Ch
LOCK TIGHT
command
R/B#
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Block Lock Feature
Figure 62: PROGRAM/ERASE Issued to Locked Block
LBSY
t
R/B#
I/Ox
PROGRAM or ERASE
CONFIRM
Add ress/data input
70h
Locked block
60h
READ STATUS
BLOCK LOCK READ STATUS (7Ah)
The BLOCK LOCK READ STATUS (7Ah) command is used to determine the protection
status of individual blocks. The address cycles have the same format, as shown below,
and the invert area bit should be set LOW. On the falling edge of RE# the I/O pins output
the block lock status register, which contains the information on the protection status
of the block.
Table 20: Block Lock Status Register Bit Definitions
Block Lock Status Register Definitions
I/O[7:3]
I/O2 (Lock#)
I/O1 (LT#)
I/O0 (LT)
Block is locked tight
X
0
0
1
Block is locked
X
0
1
0
Block is unlocked, and device is locked tight
X
1
0
1
Block is unlocked, and device is not locked tight
X
1
1
0
Figure 63: BLOCK LOCK READ STATUS
CLE
CE#
WE#
tWHR
ALE
RE#
I/Ox
7Ah
BLOCK LOCK
READ STATUS
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Add 1
Add 2
Add 3
Status
Block address
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Block Lock Feature
Figure 64: BLOCK LOCK Flowchart
Power-up
Power-up with
LOCK HIGH
Power-up with
LOCK LOW
(default)
Entire NAND Flash
array locked
BLOCK LOCK function
disabled
LOCK TIGHT Cmd
with WP# and
LOCK HIGH
Entire NAND Flash
array locked tight
UNLOCK Cmd with
invert area bit = 1
UNLOCK Cmd with
invert area bit = 0
WP# LOW
>100ns or
LOCK Cmd
WP# LOW
>100ns or
LOCK Cmd
Unlocked range
Locked range
Locked range
Unlocked range
UNLOCK Cmd with
invert area bit = 0
UNLOCK Cmd with invert area bit = 1
Unlocked range
UNLOCK Cmd
with invert area
bit = 1
UNLOCK Cmd with invert area bit = 0
LOCK TIGHT Cmd
with WP# and
LOCK HIGH
Locked range
LOCK TIGHT Cmd
with WP# and
LOCK HIGH
Unlocked range
Locked tight range
Locked tight range
Unlocked range
Unlocked range
Locked-tight range
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
One-Time Programmable (OTP) Operations
One-Time Programmable (OTP) Operations
This Micron NAND Flash device offers a protected, one-time programmable NAND
Flash memory area. Thirty full pages (2112 bytes per page) of OTP data are available on
the device, and the entire range is guaranteed to be good. The OTP area is accessible
only through the OTP commands. Customers can use the OTP area any way they
choose; typical uses include programming serial numbers or other data for permanent
storage.
The OTP area leaves the factory in an unwritten state (all bits are 1s). Programming or
partial-page programming enables the user to program only 0 bits in the OTP area. The
OTP area cannot be erased, whether it is protected or not. Protecting the OTP area prevents further programming of that area.
Micron provides a unique way to program and verify data before permanently protecting it and preventing future changes. The OTP area is only accessible while in OTP operation mode. To set the device to OTP operation mode, issue the SET FEATURE (EFh)
command to feature address 90h and write 01h to P1, followed by three cycles of 00h to
P2-P4. For parameters to enter OTP mode, see Features Operations.
When the device is in OTP operation mode, all subsequent PAGE READ (00h-30h) and
PROGRAM PAGE (80h-10h) commands are applied to the OTP area. The OTP area is assigned to page addresses 02h-1Fh. To program an OTP page, issue the PROGRAM PAGE
(80h-10h) command. The pages must be programmed in the ascending order. Similarly,
to read an OTP page, issue the PAGE READ (00h-30h) command.
Protecting the OTP is done by entering OTP protect mode. To set the device to OTP protect mode, issue the SET FEATURE (EFh) command to feature address 90h and write
03h to P1, followed by three cycles of 00h to P2-P4.
To determine whether the device is busy during an OTP operation, either monitor R/B#
or use the READ STATUS (70h) command.
To exit OTP operation or protect mode, write 00h to P1 at feature address 90h.
Legacy OTP Commands
For legacy OTP commands, OTP DATA PROGRAM (A0h-10h), OTP DATA PROTECT
(A5h-10h), and OTP DATA READ (AFh-30h), refer to the MT29F4GxxAxC data sheet.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
One-Time Programmable (OTP) Operations
OTP DATA PROGRAM (80h-10h)
The OTP DATA PROGRAM (80h-10h) command is used to write data to the pages within
the OTP area. An entire page can be programmed at one time, or a page can be partially
programmed up to eight times. Only the OTP area allows up to eight partial-page programs. The rest of the blocks support only four partial-page programs. There is no
ERASE operation for OTP pages.
PROGRAM PAGE enables programming into an offset of an OTP page using two bytes of
the column address (CA[12:0]). The command is compatible with the RANDOM DATA
INPUT (85h) command. The PROGRAM PAGE command will not execute if the OTP
area has been protected.
To use the PROGRAM PAGE command, issue the 80h command. Issue n address cycles.
The first two address cycles are the column address. For the remaining cycles, select a
page in the range of 02h-00h through 1Fh-00h. Next, write from 1–2112 bytes of data.
After data input is complete, issue the 10h command. The internal control logic automatically executes the proper programming algorithm and controls the necessary timing for programming and verification.
R/B# goes LOW for the duration of the array programming time (tPROG). The READ
STATUS (70h) command is the only valid command for reading status in OTP operation
mode. Bit 5 of the status register reflects the state of R/B#. When the device is ready,
read bit 0 of the status register to determine whether the operation passed or failed (see
Status Operations). Each OTP page can be programmed to 8 partial-page programming.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
One-Time Programmable (OTP) Operations
RANDOM DATA INPUT (85h)
After the initial OTP data set is input, additional data can be written to a new column
address with the RANDOM DATA INPUT (85h) command. The RANDOM DATA INPUT
command can be used any number of times in the same page prior to the OTP PAGE
WRITE (10h) command being issued.
Figure 65: OTP DATA PROGRAM (After Entering OTP Operation Mode)
CLE
CE#
tWC
WE#
tWB
tPROG
ALE
RE#
I/Ox
Col
add 1
80h
OTP DATA INPUT
command
Col
add 2
OTP
page1
OTP address1
00h
00h
DIN
n
DIN
m
1 up to m bytes
serial input
10h
70h
PROGRAM
command
READ STATUS
command
Status
R/B#
x8 device: m = 2112 bytes
x16 device: m = 1056 words
OTP data written
(following good status confirmation)
Don’t Care
Note:
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1. The OTP page must be within the 02h–1Fh range.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
One-Time Programmable (OTP) Operations
Figure 66: OTP DATA PROGRAM Operation with RANDOM DATA INPUT (After Entering OTP Operation Mode)
CLE
CE#
tWC
tADL
tADL
WE#
tWB
tPROG
ALE
RE#
I/Ox
80h
Col
add1
OTP
Col
add2 page1
00h
00h
SERIAL DATA
INPUT command
DIN
Col
Col
85h
add1 add2
n+1
Serial input RANDOM DATA Column address
INPUT command
DIN
n
DIN
n
DIN
10h
n+1
Serial input
PROGRAM
command
70h
Status
READ STATUS
command
R/B#
Don‘t Care
OTP DATA PROTECT (80h-10)
The OTP DATA PROTECT (80h-10h) command is used to prevent further programming
of the pages in the OTP area. To protect the OTP area, the target must be in OTP operation mode.
To protect all data in the OTP area, issue the 80h command. Issue n address cycles including the column address, OTP protect page address and block address; the column
and block addresses are fixed to 0. Next, write 00h data for the first byte location and
issue the 10h command. R/B# goes LOW for the duration of the array programming
time, tPROG.
After the data is protected, it cannot be programmed further. When the OTP area is protected, the pages within the area are no longer programmable and cannot be unprotected.
The READ STATUS (70h) command is the only valid command for reading status in OTP
operation mode. The RDY bit of the status register will reflect the state of R/B#. Use of
the READ STATUS ENHANCED (78h) command is prohibited.
When the target is ready, read the FAIL bit of the status register to determine if the operation passed or failed.
If the OTP DATA PROTECT (80h-10h) command is issued after the OTP area has already
been protected, R/B# goes LOW for tOBSY. After tOBSY, the status register is set to 60h.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
One-Time Programmable (OTP) Operations
Figure 67: OTP DATA PROTECT Operation (After Entering OTP Protect Mode)
CLE
CE#
tWC
WE#
tWB
tPROG
ALE
RE#
I/Ox
Col
00h
80h
OTP DATA
PROTECT command
Col
00h
OTP
page
00h
00h
DIN
OTP address
10h
70h
PROGRAM
command
READ STATUS
command
R/B#
Status
OTP data protected1
Don’t Care
Note:
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1. OTP data is protected following a good status confirmation.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
One-Time Programmable (OTP) Operations
OTP DATA READ (00h-30h)
To read data from the OTP area, set the device to OTP operation mode, then issue the
PAGE READ (00h-30h) command. Data can be read from OTP pages within the OTP area
whether the area is protected or not.
To use the PAGE READ command for reading data from the OTP area, issue the 00h
command, and then issue five address cycles: for the first two cycles, the column address; and for the remaining address cycles, select a page in the range of 02h-00h-00h
through 1Fh-00h-00h. Lastly, issue the 30h command. The PAGE READ CACHE MODE
command is not supported on OTP pages.
R/B# goes LOW (tR) while the data is moved from the OTP page to the data register. The
READ STATUS (70h) command is the only valid command for reading status in OTP operation mode. Bit 5 of the status register reflects the state of R/B# (see Status Operations).
Normal READ operation timings apply to OTP read accesses. Additional pages within
the OTP area can be selected by repeating the OTP DATA READ command.
The PAGE READ command is compatible with the RANDOM DATA OUTPUT (05h-E0h)
command.
Only data on the current page can be read. Pulsing RE# outputs data sequentially.
Figure 68: OTP DATA READ
CLE
CE#
WE#
ALE
RE#
I/Ox
00h
Col
add 1
Col
add 2
OTP
page1
00h
00h
DOUT
n
30h
DOUT
n+1
DOUT
m
tR
OTP address
Busy
R/B#
Don’t Care
Note:
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1. The OTP page must be within the 02h–1Fh range.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
One-Time Programmable (OTP) Operations
Figure 69: OTP DATA READ with RANDOM DATA READ Operation
CLE
t CLR
CE#
WE#
t WB
t AR
t WHR
ALE
t REA
t RC
RE#
t RR
I/Ox
00h
Col
add 1
Col
add 2
Column addressn
R/B#
OTP
page 1
00h
00h
DOUT
n
30h
DOUT
n+1
05h
tR
Col
add 1
Col
add 2
E0h
DOUT
m
DOUT
m+1
Column addressm
Busy
Don’t Care
Note:
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1. The OTP page must be within the range 02h–1Fh.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Two-Plane Operations
Two-Plane Operations
Each NAND Flash logical unit (LUN) is divided into multiple physical planes. Each
plane contains a cache register and a data register independent of the other planes. The
planes are addressed via the low-order block address bits. Specific details are provided
in Device and Array Organization.
Two-plane operations make better use of the NAND Flash arrays on these physical
planes by performing concurrent READ, PROGRAM, or ERASE operations on multiple
planes, significantly improving system performance. Two-plane operations must be of
the same type across the planes; for example, it is not possible to perform a PROGRAM
operation on one plane with an ERASE operation on another.
When issuing two-plane program or erase operations, use the READ STATUS (70h)
command and check whether the previous operation(s) failed. If the READ STATUS
(70h) command indicates that an error occurred (FAIL = 1 and/or FAILC = 1), use the
READ STATUS ENHANCED (78h) command to determine which plane operation failed.
Two-Plane Addressing
Two-plane commands require multiple, five-cycle addresses, one address per operational plane. For a given two-plane operation, these addresses are subject to the following requirements:
• The LUN address bit(s) must be identical for all of the issued addresses.
• The plane select bit, BA[6], must be different for each issued address.
• The page address bits, PA[5:0], must be identical for each issued address.
The READ STATUS (70h) command should be used following two-plane program page
and erase block operations on a single die (LUN).
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Two-Plane Operations
Figure 70: TWO-PLANE PAGE READ
CLE
WE#
ALE
RE#
Page address M
00h
I/Ox
Col
add 1
Col
add 2
Row
add 1
Column address J
Row
add 2
Page address M
Row
add 3
Col
add 1
00h
Plane 0 address
Col
add 2
Row
add 1
Column address J
Row
add 2
Row
add 3
30h
tR
Plane 1 address
R/B#
1
CLE
WE#
ALE
RE#
I/Ox
DOUT 0
DOUT 1
DOUT
06h
Col
add 1
Col
add 2
Row
add 1
Plane 0 data
Row
add 2
Row
add 3
Plane 1 address
E0h
DOUT 0
DOUT 1
DOUT
Plane 1 data
R/B#
1
Notes:
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1. Column and page addresses must be the same.
2. The least significant block address bit, BA6, must be different for the first- and secondplane addresses.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Two-Plane Operations
Figure 71: TWO-PLANE PAGE READ with RANDOM DATA READ
tR
R/B#
RE#
I/Ox
00h
Address (5 cycles) 00h
Address (5 cycles) 30h
Plane 0 address
Data output
Plane 1 address
05h
Address
(2 cycles)
E0h
Data output
Plane 0 data
Plane 0 data
1
R/B#
RE#
06h
I/Ox
Address (5 cycles) E0h
Data output
Plane 1 address
05h
Address
(2 cycles)
E0h
Data output
Plane 1 data
Plane 1 data
1
Figure 72: TWO-PLANE PROGRAM PAGE
tDBSY
tPROG
R/B#
I/Ox
80h
Address (5 cycles) Data
1st-plane address
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input 11h
80h
Address (5 cycles)
Data
input 10h
70h
Status
2nd-plane address
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Two-Plane Operations
Figure 73: TWO-PLANE PROGRAM PAGE with RANDOM DATA INPUT
tDBSY
R/B#
I/Ox
80h
Address (5 cycles)
Data
85h
input
Address (2 cycles)
Data
input
Different column
address than previous
5 address cycles, for
1st plane only
1st-plane address
11h
80h
Address (5 cycles)
Data
input
2nd-plane address
1
Unlimited number of repetitions
tPROG
R/B#
85h
I/Ox
1
Address (2 cycles)
Data
input
10h
Different column
address than previous
5 address cycles, for
2nd plane only
Unlimited number of repetitions
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Two-Plane Operations
Figure 74: TWO-PLANE PROGRAM PAGE CACHE MODE
tDBSY
tCBSY
R/B#
80h
I/Ox
Address/data input
11h
80h
1st plane
Address/data input
15h
2nd plane
1
tDBSY
tCBSY
R/B#
80h
I/Ox
Address/data input
11h
80h
1st plane
Address/data input
15h
2nd plane
1
2
tDBSY
tLPROG
R/B#
80h
I/Ox
Address/data input
11h
80h
1st plane
Address/data input
10h
2nd plane
2
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Two-Plane Operations
Figure 75: TWO-PLANE INTERNAL DATA MOVE
tR
tDBSY
R/B#
00h
I/Ox
Address (5 cycles) 00h
1st-plane source
Address (5 cycles) 35h
85h
2nd-plane source
Address (5 cycles) 11h
1st-plane destination
1
tPROG
R/B#
85h
I/Ox
Address (5 cycles) 10h
70h
Status
2nd-plane destination
1
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Two-Plane Operations
Figure 76: TWO-PLANE INTERNAL DATA MOVE with TWO-PLANE RANDOM DATA READ
tR
R/B#
RE#
I/Ox
00h Address (5 cycles) 00h Address (5 cycles) 35h
1st-plane source
Data output
2nd-plane source
06h
Data from 1st-plane source
Address (5 cycles) E0h
2nd-plane source address 1
R/B#
RE#
I/Ox
Data output
05h
Data from
2nd-plane source
1
Address (2 cycles) E0h
Data output
2nd-plane
source column address
Data from 2nd-plane source
from new column address
2
Optional
tDBSY
tPROG
R/B#
RE#
I/Ox
85h
2
Address (5 cycles) 11h
1st-plane destination
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85h
Address (5 cycles) 10h
70h
Status
2nd-plane destination
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Two-Plane Operations
Figure 77: TWO-PLANE INTERNAL DATA MOVE with RANDOM DATA INPUT
tR
R/B#
00h
I/Ox
Address (5 cycles)
00h
Address (5 cycles)
1st-plane source
35h
85h
2nd-plane source
Address (5 cycles)
Data
85h
1st-plane destination
Optional
Address (2 cycles)
Data
11h
Unlimited number
of repetitions
1
tPROG
tDBSY
R/B#
85h
I/Ox
Address (5 cycles)
Data
Optional
2nd-plane destination
85h
Address (2 cycles)
Data
10h
70h
Status
Unlimited number
of repetitions
1
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Two-Plane Operations
Figure 78: TWO-PLANE BLOCK ERASE
CLE
CE#
WE#
ALE
tDBSY
tBERS
R/B#
RE#
I/Ox
60h
Address input (3 cycles)
D1h
60h
1st plane
Address input (3 cycles)
D0h
70h
Status
or 78h
2nd plane
Don‘t Care
Optional
Figure 79: TWO-PLANE/MULTIPLE-DIE READ STATUS Cycle
CE#
CLE
WE#
tAR
ALE
RE#
tWHR
I/Ox
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78h
Address (3 cycles)
106
tREA
Status output
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Interleaved Die (Multi-LUN) Operations
Interleaved Die (Multi-LUN) Operations
In devices that have more than one die (LUN) per target, it is possible to improve performance by interleaving operations between the die (LUNs). An interleaved die (multiLUN) operation is one that is issued to an idle die (LUN) (RDY = 1) while another die
(LUN) is busy (RDY = 0).
Interleaved die (multi-LUN) operations are prohibited following RESET (FFh), identification (90h, ECh, EDh), and configuration (EEh, EFh) operations until ARDY =1 for all of
the die (LUNs) on the target.
During an interleaved die (multi-LUN) operation, there are two methods to determine
operation completion. The R/B# signal indicates when all of the die (LUNs) have finished their operations. R/B# remains LOW while any die (LUN) is busy. When R/B# goes
HIGH, all of the die (LUNs) are idle and the operations are complete. Alternatively, the
READ STATUS ENHANCED (78h) command can report the status of each die (LUN) individually.
If a die (LUN) is performing a cache operation, like PROGRAM PAGE CACHE (80h-15h),
then the die (LUN) is able to accept the data for another cache operation when status
register bit 6 is 1. All operations, including cache operations, are complete on a die
when status register bit 5 is 1.
During and following interleaved die (multi-LUN) operations, the READ STATUS (70h)
command is prohibited. Instead, use the READ STATUS ENHANCED (78h) command to
monitor status. This command selects which die (LUN) will report status. When twoplane commands are used with interleaved die (multi-LUN) operations, the two-plane
commands must also meet the requirements in Two-Plane Operations.
See Command Definitions for the list of commands that can be issued while other die
(LUNs) are busy.
During an interleaved die (multi-LUN) operation that involves a PROGRAM series
(80h-10h, 80h-15h) operation and a READ operation, the PROGRAM series operation
must be issued before the READ series operation. The data from the READ series operation must be output to the host before the next PROGRAM series operation is issued.
This is because the 80h command clears the cache register contents of all cache registers on all planes.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Error Management
Error Management
Each NAND Flash die (LUN) is specified to have a minimum number of valid blocks
(NVB) of the total available blocks. This means the die (LUNs) could have blocks that
are invalid when shipped from the factory. An invalid block is one that contains at least
one page that has more bad bits than can be corrected by the minimum required ECC.
Additional blocks can develop with use. However, the total number of available blocks
per die (LUN) will not fall below NVB during the endurance life of the product.
Although NAND Flash memory devices could contain bad blocks, they can be used
quite reliably in systems that provide bad block management and error-correction algorithms. This type of software environment ensures data integrity.
Internal circuitry isolates each block from other blocks, so the presence of a bad block
does not affect the operation of the rest of the NAND Flash array.
NAND Flash devices are shipped from the factory erased. The factory identifies invalid
blocks before shipping by attempting to program the bad block mark into every location in the first page of each invalid block. It may not be possible to program every location with the bad block mark. However, the first spare area location in each bad block is
guaranteed to contain the bad block mark. This method is compliant with ONFI Factory
Defect Mapping requirements. See the following table for the first spare area location
and the bad block mark.
System software should check the first spare area location on the first page of each
block prior to performing any PROGRAM or ERASE operations on the NAND Flash device. A bad block table can then be created, enabling system software to map around
these areas. Factory testing is performed under worst-case conditions. Because invalid
blocks could be marginal, it may not be possible to recover this information if the block
is erased.
Over time, some memory locations may fail to program or erase properly. In order to
ensure that data is stored properly over the life of the NAND Flash device, the following
precautions are required:
• Always check status after a PROGRAM or ERASE operation
• Under typical conditions, use the minimum required ECC (see table below)
• Use bad block management and wear-leveling algorithms
The first block (physical block address 00h) for each CE# is guaranteed to be valid
with ECC when shipped from the factory.
Table 21: Error Management Details
Description
Requirement
Minimum number of valid blocks (NVB) per LUN
4016
Total available blocks per LUN
4096
First spare area location
x8: byte 2048
x16: word 1024
Bad-block mark
x8: 00h
x16: 0000h
Minimum required ECC
4-bit ECC per 528 bytes
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Error Management
Table 21: Error Management Details (Continued)
Description
Requirement
Minimum ECC with internal ECC enabled
4-bit ECC per 516 bytes (user data) + 8
bytes (parity data)
Minimum required ECC for block 0 if PROGRAM/
ERASE cycles are less than 1000
1-bit ECC per 528 bytes
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Internal ECC and Spare Area Mapping for ECC
Internal ECC and Spare Area Mapping for ECC
Internal ECC enables 5-bit detection and 4-bit error correction in 512 bytes (x8) or 256
words (x16) of the main area and 4 bytes (x8) or 2 words (x16) of metadata I in the spare
area. The metadata II area, which consists of two bytes (x8) and one word (x16), is not
ECC protected. During the busy time for PROGRAM operations, internal ECC generates
parity bits when error detection is complete.
During READ operations the device executes the internal ECC engine (5-bit detection
and 4-bit error correction). When the READ operaton is complete, read status bit 0 must
be checked to determine whether errors larger than four bits have occurred.
Following the READ STATUS command, the device must be returned to read mode by
issuing the 00h command.
Limitations of internal ECC include the spare area, defined in the figures below, and
ECC parity areas that cannot be written to. Each ECC user area (referred to as main and
spare) must be written within one partial-page program so that the NAND device can
calculate the proper ECC parity. The number of partial-page programs within a page
cannot exceed four.
Figure 80: Spare Area Mapping (x8)
Max Byte Min Byte
Address Address ECC Protected
1FFh
000h
Yes
3FFh
200h
Yes
5FFh
400h
Yes
7FFh
600h
Yes
801h
800h
No
803h
802h
No
807h
804h
Yes
80Fh
808h
Yes
811h
810h
No
813h
812h
No
817h
814h
Yes
81Fh
818h
Yes
821h
820h
No
823h
822h
No
827h
824h
Yes
82Fh
828h
Yes
831h
830h
No
833h
832h
No
837h
834h
Yes
83Fh
838h
Yes
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Area
Main 0
Main 1
Main 2
Main 3
Spare 0
Spare 0
Spare 1
Spare 1
Spare 2
Spare 2
Spare 3
Spare 3
Description
User data
User data
User data
User data
Reserved
User metadata II
User metadata I
ECC for main/spare 0
Reserved
User metadata II
User metadata I
ECC for main/spare 1
Reserved
User metadata II
User metadata I
ECC for main/spare 2
User data
User metadata II
User metadata I
ECC for main/spare 3
110
Bad Block
Information
ECC
Parity
User Data
(Metadata)
2 bytes
8 bytes
6 bytes
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Internal ECC and Spare Area Mapping for ECC
Figure 81: Spare Area Mapping (x16)
Max word Min word
Address Address ECC Protected
0FFh
000h
Yes
1FFh
100h
Yes
2FFh
200h
Yes
3FFh
300h
Yes
400h
400h
No
401h
401h
No
403h
402h
Yes
407h
404h
Yes
408h
408h
No
409h
409h
No
40Bh
40Ah
Yes
40Fh
40Ch
Yes
410h
410h
No
411h
411h
No
413h
412h
Yes
417h
414h
Yes
418h
418h
No
419h
419h
No
41Bh
41Ah
Yes
41Fh
41Ch
Yes
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Area
Main 0
Main 1
Main 2
Main 3
Spare 0
Spare 0
Spare 1
Spare 1
Spare 2
Spare 2
Spare 3
Spare 3
Description
User data
User data
User data
User data
Reserved
User metadata II
User metadata I
ECC for main/spare 0
Reserved
User metadata II
User metadata I
ECC for main/spare 1
Reserved
User metadata II
User metadata I
ECC for main/spare 2
User data
User metadata II
User metadata I
ECC for main/spare 3
111
Bad Block
Information
ECC
Parity
User Data
(Metadata)
1 word
4 words
3 words
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Electrical Specifications
Electrical Specifications
Stresses greater than those listed can cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not guaranteed. Exposure to absolute maximum rating conditions for extended periods can affect reliability.
Table 22: Absolute Maximum Ratings
Voltage on any pin relative to Vss
Parameter/Condition
Voltage input
Symbol
Min
Max
Unit
VIN
–0.6
2.4
V
–0.6
4.6
V
1.8V
3.3V
VCC supply voltage
1.8V
VCC
–0.6
2.4
V
–0.6
4.6
V
TSTG
–65
150
°C
–
–
5
mA
3.3V
Storage temperature
Short circuit output current, I/Os
Table 23: Recommended Operating Conditions
Parameter/Condition
Symbol
Min
Typ
Max
Unit
TA
0
–
70
°C
Operating temperature Commercial
Industrial
VCC supply voltage
1.8V
VCC
3.3V
Ground supply voltage
VSS
–40
–
85
°C
1.7
1.8
1.95
V
2.7
3.3
3.6
V
0
0
0
V
Table 24: Valid Blocks
Parameter
Symbol
Device
Min
Max
Unit
Notes
Valid block
number
NVB
MT29F4G
4016
4096
Blocks
1, 2
MT29F8G
8032
8192
Blocks
1, 2, 3
Notes:
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1. Invalid blocks are blocks that contain one or more bad bits. The device may contain bad
blocks upon shipment. Additional bad blocks may develop over time; however, the total
number of available blocks will not drop below NVB during the endurance life of the
device. Do not erase or program blocks marked invalid by the factory.
2. Block 00h (the first block) is guaranteed to be valid with ECC when shipped from the
factory.
3. Each 4Gb section has a maximum of 80 invalid blocks.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Electrical Specifications
Table 25: Capacitance
Notes 1–3 apply to all parameters and conditions
Description
Symbol
Max
Unit
Input capacitance
CIN
10
pF
Input/output capacitance (I/O)
CIO
10
pF
1. These parameters are verified in device characterization and are not 100% tested.
2. Test conditions: TC = 25°C; f = 1 MHz; VIN = 0V.
3. Capacitance (CIN = CIO = 20pF) for MT29F8G and (CIN = CIO = 40pF) for MT29F16G.
Notes:
Table 26: Test Conditions
Parameter
Value
Input pulse levels
Notes
0.0V to VCC
Input rise and fall times
1.8V
2.5ns
3.3V
5.0ns
Input and output timing levels
Output load
VCC/2
1 TTL GATE and CL = 30pF (1.8V)
1
1 TTL GATE and CL = 50pF (3.3V)
Output load
1 TTL GATE and CL = 30pF (1.8V)
1
1 TTL GATE and CL = 50pF (3.3V)
Note:
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1. Verified in device characterization, not 100% tested.
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Electrical Specifications – DC Characteristics and Operating
Conditions
Electrical Specifications – DC Characteristics and Operating Conditions
Table 27: DC Characteristics and Operating Conditions (3.3V)
Parameter
Conditions
Sequential READ current
tRC
=
tRC
(MIN); CE# = VIL;
IOUT = 0mA
Symbol
Min
Typ
Max
Unit
ICC1
–
25
35
mA
Notes
PROGRAM current
–
ICC2
–
25
35
mA
ERASE current
–
ICC3
–
25
35
mA
CE# = VIH;
WP# = 0V/VCC
ISB1
–
–
1
mA
Standby current (CMOS)
CE# = VCC - 0.2V;
WP# = 0V/VCC
ISB2
–
20
100
µA
Staggered power-up current
Rise time = 1ms
Line capacitance = 0.1µF
IST
–
–
10 per die
mA
VIN = 0V to VCC
ILI
–
–
±10
µA
VOUT = 0V to VCC
ILO
–
–
±10
µA
I/O[7:0], I/O[15:0],
CE#, CLE, ALE, WE#, RE#,
WP#
VIH
0.8 x VCC
–
VCC + 0.3
V
–
VIL
–0.3
–
0.2 x VCC
V
Output high voltage
IOH = –400µA
VOH
0.67 x VCC
–
–
V
3
Output low voltage
IOL = 2.1mA
VOL
–
–
0.4
V
3
Output low current
VOL = 0.4V
IOL (R/B#)
8
10
–
mA
4
Standby current (TTL)
Input leakage current
Output leakage current
Input high voltage
Input low voltage, all inputs
Notes:
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1
2
1. ISB1 = 15mA if operating temperature is 105°C.
2. Measurement is taken with 1ms averaging intervals and begins after VCC reaches
VCC(MIN).
3. VOH and VOL may need to be relaxed if I/O drive strength is not set to full.
4. IOL (R/B#) may need to be relaxed if R/B pull-down strength is not set to full.
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Electrical Specifications – DC Characteristics and Operating
Conditions
Table 28: DC Characteristics and Operating Conditions (1.8V)
Parameter
Conditions
Sequential READ current
tRC
=
tRC
(MIN); CE# = VIL;
IOUT = 0mA
Symbol
Min
Typ
Max
Unit
Notes
ICC1
–
13
20
mA
1, 2
PROGRAM current
–
ICC2
–
10
20
mA
1, 2
ERASE current
–
ICC3
–
10
20
mA
1, 2
CE# = VIH;
WP# = 0V/VCC
ISB1
–
–
1
mA
Standby current (CMOS)
CE# = VCC - 0.2V;
WP# = 0V/VCC
ISB2
–
10
50
µA
Staggered power-up current
Rise time = 1ms
Line capacitance = 0.1µF
IST
–
–
10 per die
mA
VIN = 0V to VCC
ILI
–
–
±10
µA
VOUT = 0V to VCC
ILO
–
–
±10
µA
I/O[7:0], I/O[15:0],
CE#, CLE, ALE, WE#, RE#,
WP#
VIH
0.8 x VCC
–
VCC + 0.3
V
–
VIL
–0.3
–
0.2 x VCC
V
Output high voltage
IOH = –100µA
VOH
VCC - 0.1
–
–
V
4
Output low voltage
IOL = +100µA
VOL
–
–
0.1
V
4
VOL = 0.2V
IOL (R/B#)
3
4
–
mA
5
Standby current (TTL)
Input leakage current
Output leakage current
Input high voltage
Input low voltage, all inputs
Output low current (R/B#)
Notes:
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3
1. Typical and maximum values are for single-plane operation only. If device supports dualplane operation, values are 20mA (TYP) and 40mA (MAX).
2. Values are for single-die operations. Values could be higher for interleaved-die operations.
3. Measurement is taken with 1ms averaging intervals and begins after VCC reaches
VCC(MIN).
4. Test conditions for VOH and VOL.
5. DC characteristics may need to be relaxed if R/B# pull-down strength is not set to full.
115
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Electrical Specifications – AC Characteristics and Operating
Conditions
Electrical Specifications – AC Characteristics and Operating Conditions
Table 29: AC Characteristics: Command, Data, and Address Input (3.3V)
Note 1 applies to all
Parameter
Symbol
Min
Max
Unit
Notes
ALE to data start
tADL
70
–
ns
2
ALE hold time
tALH
5
–
ns
ALE setup time
tALS
10
–
ns
CE# hold time
tCH
5
–
ns
CLE hold time
tCLH
5
–
ns
CLE setup time
tCLS
10
–
ns
CE# setup time
tCS
15
–
ns
Data hold time
tDH
5
–
ns
Data setup time
tDS
7
–
ns
WRITE cycle time
tWC
20
–
ns
2
WE# pulse width HIGH
tWH
7
–
ns
2
WE# pulse width
tWP
10
–
ns
2
WP# transition to WE# LOW
tWW
100
–
ns
Notes:
1. Operating mode timings meet ONFI timing mode 5 parameters.
2. Timing for tADL begins in the address cycle, on the final rising edge of WE#, and ends
with the first rising edge of WE# for data input.
Table 30: AC Characteristics: Command, Data, and Address Input (1.8V)
Note 1 applies to all
Parameter
Symbol
Min
Max
Unit
Notes
ALE to data start
tADL
70
–
ns
2
ALE hold time
tALH
5
–
ns
ALE setup time
tALS
10
–
ns
CE# hold time
tCH
5
–
ns
CLE hold time
tCLH
5
–
ns
CLE setup time
tCLS
10
–
ns
CE# setup time
tCS
20
–
ns
Data hold time
tDH
5
–
ns
Data setup time
tDS
10
–
ns
WRITE cycle time
tWC
25
–
ns
2
WE# pulse width HIGH
tWH
10
–
ns
2
WE# pulse width
tWP
12
–
ns
2
WP# transition to WE# LOW
tWW
100
–
ns
Notes:
PDF: 09005aef83b25735
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1. Operating mode timings meet ONFI timing mode 4 parameters.
2. Timing for tADL begins in the address cycle on the final rising edge of WE#, and ends
with the first rising edge of WE# for data input.
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Electrical Specifications – AC Characteristics and Operating
Conditions
Table 31: AC Characteristics: Normal Operation (3.3V)
Note 1 applies to all
Parameter
Symbol
Min
tAR
Max
Unit
CE# access time
tCEA
10
–
ns
–
25
ns
CE# HIGH to output High-Z
tCHZ
–
50
ns
CLE to RE# delay
tCLR
10
–
ns
CE# HIGH to output hold
tCOH
15
–
ns
Output High-Z to RE# LOW
tIR
0
–
ns
READ cycle time
tRC
20
–
ns
RE# access time
tREA
–
16
ns
RE# HIGH hold time
tREH
7
–
ns
tRHOH
15
–
ns
RE# HIGH to WE# LOW
tRHW
100
–
ns
RE# HIGH to output High-Z
tRHZ
ALE to RE# delay
RE# HIGH to output hold
–
100
ns
tRLOH
5
–
ns
RE# pulse width
tRP
10
–
ns
Ready to RE# LOW
tRR
20
–
ns
Reset time (READ/PROGRAM/ERASE)
tRST
–
5/10/500
µs
WE# HIGH to busy
tWB
–
100
ns
tWHR
60
–
ns
RE# LOW to output hold
WE# HIGH to RE# LOW
Notes:
Notes
2
2
3
1. AC characteristics may need to be relaxed if I/O drive strength is not set to full.
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is
sampled and not 100% tested.
3. The first time the RESET (FFh) command is issued while the device is idle, the device will
go busy for a maximum of 1ms. Thereafter, the device goes busy for a maximum of 5µs.
Table 32: AC Characteristics: Normal Operation (1.8V)
Note 1 applies to all
Parameter
Symbol
Min
tAR
10
–
ns
CE# access time
tCEA
–
25
ns
CE# HIGH to output High-Z
tCHZ
–
50
ns
CLE to RE# delay
tCLR
10
–
ns
CE# HIGH to output hold
tCOH
15
–
ns
Output High-Z to RE# LOW
tIR
0
–
ns
READ cycle time
tRC
25
–
ns
RE# access time
tREA
–
22
ns
RE# HIGH hold time
tREH
10
–
ns
tRHOH
15
–
ns
tRHW
100
–
ns
ALE to RE# delay
RE# HIGH to output hold
RE# HIGH to WE# LOW
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117
Max
Unit
Notes
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Electrical Specifications – AC Characteristics and Operating
Conditions
Table 32: AC Characteristics: Normal Operation (1.8V) (Continued)
Note 1 applies to all
Parameter
RE# HIGH to output High-Z
RE# LOW to output hold
Symbol
Min
Max
Unit
Notes
tRHZ
–
65
ns
2
tRLOH
3
–
ns
RE# pulse width
tRP
12
–
ns
Ready to RE# LOW
tRR
20
–
ns
Reset time (READ/PROGRAM/ERASE)
tRST
–
5/10/500
µs
WE# HIGH to busy
tWB
–
100
ns
tWHR
80
–
ns
WE# HIGH to RE# LOW
Notes:
PDF: 09005aef83b25735
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3
1. AC characteristics may need to be relaxed if I/O drive strength is not set to full.
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is
sampled and not 100% tested.
3. The first time the RESET (FFh) command is issued while the device is idle, the device will
be busy for a maximum of 1ms. Thereafter, the device is busy for a maximum of 5µs.
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Electrical Specifications – Program/Erase Characteristics
Electrical Specifications – Program/Erase Characteristics
Table 33: Program/Erase Characteristics
Parameter
Number of partial-page programs
Symbol
Typ
Max
Unit
Notes
4
cycles
1
NOP
–
BLOCK ERASE operation time
tBERS
0.7
3
ms
Busy time for PROGRAM CACHE operation
tCBSY
3
600
µs
tRCBSY
3
25
µs
Busy time for SET FEATURES and GET FEATURES operations
tFEAT
–
1
µs
Busy time for OTP DATA PROGRAM operation if OTP is protected
tOBSY
–
30
µs
Busy time for PROGRAM/ERASE on locked blocks
tLBSY
–
3
µs
PROGRAM PAGE operation time, internal ECC disabled
tPROG
200
600
µs
8
PROGRAM PAGE operation time, internal ECC enabled
tPROG_ECC
220
600
µs
3, 8
Data transfer from Flash array to data register, internal ECC
disabled
tR
–
25
µs
6, 7
Data transfer from Flash array to data register, internal ECC
enabled
tR_ECC
45
70
µs
3, 5
Busy time for OTP DATA PROGRAM operation if OTP is protected, internal ECC enabled
tOBSY_ECC
–
50
µs
Busy time for TWO-PLANE PROGRAM PAGE or TWO-PLANE
BLOCK ERASE operation
tDBSY
0.5
1
µs
Cache read busy time
Notes:
PDF: 09005aef83b25735
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2
1. Four total partial-page programs to the same page. If ECC is enabled, then the device is
limited to one partial-page program per ECC user area, not exceeding four partial-page
programs per page.
2. tCBSY MAX time depends on timing between internal program completion and data-in.
3. Parameters are with internal ECC enabled.
4. Typical is nominal voltage and room temperature.
5. Typical tR_ECC is under typical process corner, nominal voltage, and at room temperature.
6. Data transfer from Flash array to data register with internal ECC disabled.
7. AC characteristics may need to be relaxed if I/O drive strength is not set to full.
8. Typical program time is defined as the time within which more than 50% of the pages
are programmed at nominal voltage and room temperature.
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Asynchronous Interface Timing Diagrams
Asynchronous Interface Timing Diagrams
Figure 82: RESET Operation
CLE
CE#
tWB
WE#
tRST
R/B#
I/O[7:0]
FFh
RESET
command
Figure 83: READ STATUS Cycle
tCLR
CLE
CE#
tCLS
tCLH
tCS
tWP
tCH
WE#
tCEA
tWHR
tRP
tCOH
tCHZ
RE#
tRHZ
tDS
I/O[7:0]
tDH
tIR
tREA
tRHOH
Status
output
70h
Don’t Care
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Timing Diagrams
Figure 84: READ STATUS ENHANCED Cycle
tCS
CE#
tCLS
tCLH
CLE
tWC
tWP
tWP
tWH
tCH
WE#
tALH
tALS
tALH
tAR
tCHZ
tCEA
tCOH
ALE
RE#
tRHZ
tDS
I/O[7:0]
tDH
tWHR
Row add 1
78h
Row add 2
tREA
tRHOH
Status output
Row add 3
Don’t Care
Figure 85: READ PARAMETER PAGE
CLE
WE#
tWB
ALE
tRC
RE#
tRR
I/O[7:0]
ECh
R/B#
PDF: 09005aef83b25735
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00h
tR or tR_ECC
tRP
P00
121
P10
P2550
P01
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Timing Diagrams
Figure 86: READ PAGE
CLE
tCLR
CE#
tWC
WE#
tWB
tAR
ALE
tR
RE#
tRC
or tR_ECC
tRP
tRR
I/Ox
00h
Col
add 1
Col
add 2
Row
add 1
Row
add 2
Row
add 3
DOUT
N
30h
tRHZ
DOUT
N+1
DOUT
M
Busy
RDY
Don’t Care
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Timing Diagrams
Figure 87: READ PAGE Operation with CE# “Don’t Care”
CLE
CE#
RE#
ALE
tR
or tR_ECC
RDY
WE#
I/Ox
00h
Address (5 cycles)
30h
Data output
tCEA
CE#
tREA
tCOH
RE#
Don’t Care
Out
I/Ox
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tCHZ
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Timing Diagrams
Figure 88: RANDOM DATA READ
CLE
tCLR
CE#
WE#
tRHW
tWHR
ALE
tRC
tREA
RE#
I/Ox
DOUT
N-1
DOUT
N
05h
Col
add 1
Col
add 2
E0h
DOUT
M
DOUT
M+1
Column address M
RDY
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Timing Diagrams
Figure 89: READ PAGE CACHE SEQUENTIAL
CLE
tCLS
tCLS
tCLH
tCS
tCH
tCS
tCLH
tCH
CE#
tWC
WE#
tCEA
tRHW
ALE
tRC
RE#
tDH
tDS
tR
tWB
I/Ox
Col
add 1
00h
Col
add 2
Row
add 1
Column address
00h
Row
add 2
Row
add 3
tRR
30h
Dout
0
31h
Page address
M
tWB
tREA
tDS
Dout
1
Dout
tDH
31h
Page address
M
tRCBSY
RDY
Column address 0
1
CLE
tCLS
tCLH
tCS
tCH
CE#
WE#
tRHW
tRHW
tCEA
ALE
tRC
tRC
RE#
tWB
tREA
tDS
tRR
tDH
I/Ox
Dout
0
Dout
1
Dout
Page address
M
tREA
Dout
0
31h
tRCBSY
Dout
1
Dout
Page address
M+1
Dout
0
3Fh
tRCBSY
Dout
1
Dout
Page address
M+2
RDY
Column address 0
Column address 0
Column address 0
1
PDF: 09005aef83b25735
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Don’t Care
125
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Timing Diagrams
Figure 90: READ PAGE CACHE RANDOM
CLE
tCLS
tCLH
tCH
tCS
CE#
tWC
WE#
ALE
RE#
tDH
tWB
tDS
I/Ox
Col
add 1
00h
Row
add 1
Col
add 2
Column address
00h
Row
add 2
Row
add 3
tR
30h
Col
add 1
00h
Page address
M
Row
add 1
Col
add 2
Column address
00h
Row
add 2
Page address
N
RDY
1
CLE
tCLS
tCLH
tCS
tCH
CE#
WE#
tCEA
ALE
tRC
tWB
RE#
tDS
tDH
I/Ox
tRHW
Col
add 1
Row
add 1
Col
add 2
Column address
00h
Row
add 2
Row
add 3
Page address
N
RDY
tRR
tREA
Dout
0
31h
Dout
1
Page address
M
tRCBSY
Column address 0
1
PDF: 09005aef83b25735
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Dout
Dout
0
3Fh
tRCBSY
Dout
1
Dout
Page address
N
Column address 0
Don’t Care
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Timing Diagrams
Figure 91: READ ID Operation
CLE
CE#
WE#
tAR
ALE
RE#
tWHR
I/Ox
90h
tREA
Byte 1
Byte 0
00h or 20h
Byte 2
Byte 3
Byte 4
Address, 1 cycle
Figure 92: PROGRAM PAGE Operation
CLE
CE#
tWC
tADL
WE#
tWB
tPROG
or
tWHR
tPROG_ECC
ALE
RE#
I/Ox
80h
Col
add 1
Col
add 2
Row
add 1
Row
add 2
Row
add 3
DIN
N
DIN
M
10h
70h
Status
1 up to m byte
serial Input
RDY
Don’t Care
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Timing Diagrams
Figure 93: PROGRAM PAGE Operation with CE# “Don’t Care”
CLE
CE#
WE#
ALE
I/Ox
Address (5 cycles)
80h
Data
Data
input
input
10h
tCH
tCS
CE#
tWP
WE#
Don’t Care
Figure 94: PROGRAM PAGE Operation with RANDOM DATA INPUT
CLE
CE#
tADL
tWC
tADL
WE#
tPROG or
tWB tPROG_ECC
tWHR
ALE
RE#
I/Ox
80h
Col
add 1
Col
add 2
Row
add 1
Row
add 2
Row
add 3
DIN
M
DIN
N
Serial input
85h
Col
add 1
Col
add 2
CHANGE WRITE Column address
COLUMN command
DIN
P
DIN
Q
Serial input
10h
70h
Status
READ STATUS
command
RDY
Don’t Care
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Asynchronous Interface Timing Diagrams
Figure 95: PROGRAM PAGE CACHE
CLE
CE#
tADL
tWC
WE#
tWB tCBSY
tWB tLPROG
tWHR
ALE
RE#
I/Ox
80h
Row Row Row
Col
Col
add 1 add 2 add 1 add 2 add 3
Din
N
Din
M
15h
80h
Col
Col Row Row Row
add 1 add 2 add 1 add 2 add 3
Din
N
Din
M
10h
70h
Status
Serial input
RDY
Last page - 1
Last page
Don’t Care
Figure 96: PROGRAM PAGE CACHE Ending on 15h
CLE
CE#
tADL
tADL
tWC
WE#
tWHR
tWHR
ALE
RE#
I/Ox
80h
Col Row Row Row
Col
add 1 add 2 add 1 add 2 add 3
Din
Din
N
M
Serial input
15h
70h
Status
80h
Col Row Row Row Din
Col
add 1 add 2 add 1 add 2 add 3 N
Last page – 1
Din
M
15h
70h
Status
70h
Status
Last page
Poll status until:
I/O6 = 1, Ready
To verify successful completion of the last 2 pages:
I/O5 = 1, Ready
I/O0 = 0, Last page PROGRAM successful
I/O1 = 0, Last page – 1 PROGRAM successful
Don’t Care
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Timing Diagrams
Figure 97: INTERNAL DATA MOVE
CLE
CE#
tADL
tWC
WE#
tWB tPROG
tWB
tWHR
ALE
RE#
I/Ox
tR
Col
add 1
00h
Col
add 2
Row
add 1
Row
add 2
Row
add 3
35h
(or 30h)
85h
Col
Row Row Row
Col
add 1 add 2 add 1 add 2 add 3
Data
1
Data
N
10h
Status
70h
READ STATUS
Busy command
Busy
RDY
Data Input
Optional
Don’t Care
Figure 98: INTERNAL DATA MOVE (85h-10h) with Internal ECC Enabled
tR_ECC
tPROG_ECC
R/B#
I/O[7:0]
00h
Address
(5 cycles)
35h
Source address
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70h
Status
00h
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
DOUT
85h
DOUT is optional
130
Address
(5 cycles)
10h
Destination address
70h
Status
00h
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Timing Diagrams
Figure 99: INTERNAL DATA MOVE (85h-10h) with Random Data Input with Internal ECC Enabled
tR_ECC
tPROG_ECC
R/B#
I/O[7:0]
00h
Address
(5 cycles)
35h
70h
Source address
Status
DOUT
00h
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
85h
DOUT is optional
Address
(5 cycles) Data 85h
Address
(2 cycles) Data 10h
70h
Destination address
Column address 1, 2
(Unlimitted repetitions are possible)
Figure 100: ERASE BLOCK Operation
CLE
CE#
WC
t
WE#
WB
WHR
t
t
ALE
RE#
BERS
t
I/O[7:0]
60h
Row
add 1
Row
add 2
Row
add 3
D0h
70h
Row address
RDY
Status
READ STATUS
command
Busy
I/O0 = 0, Pass
I/O0 = 1, Fail
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Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Revision History
Revision History
Rev. R – 02/18
• Added Important Notes and Warnings section for further clarification aligning to industry standards
Rev. Q – 04/14
• Updated the ONFI statement in the READ PARAMETER PAGE (ECh) section
• Updated the LOCK TIGHT command section
Rev. P – 02/14
• Added information for automotive grade and automotive industrial grade parts
Rev. O – 08/13
• Updated Block Lock Feature and Lock Tight in Block Lock Feature
Rev. N – 10/12
• Updated part number chart with option X for product longevity program (PLP) under
Special Options
Rev. M – 02/12
• Updated ISB2 spec in 3.3V DC Characteristics and Operating Conditions table
Rev. L – 1/12
• Updated 63-ball package dimension drawing
• Corrected the P1 values in the Feature Addresses 01h: Timing Mode table
Rev. K – 11/11
• Command Definitions topic, Command Set table: Changed OTP DATA LOCK BY
BLOCK (ONFI) to OTP DATA LOCK BY PAGE (ONFI); fixed unresolved xref to c_interleaved_die_multi-lun_operations.dita in note 2
• One-Time Programmable (OTP) Operations topic, OTP DATA PROTECT (80h-10) section: Updated content
Rev. J – 09/11
• Deleted OCPL notation from 48-Pin TSOP – Type 1 figure
• Removed former 48-Pin TSOP – Type 1, CPL figure
Rev. I – 07/11
•
•
•
•
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Added 16Gb and 16Gb part numbers to document
Updated part number chart to include 16Gb
Added 16Gb density to Device and Array Organization
Clarification to Notes for Electrical Specifications table
132
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Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Revision History
Rev. H – 12/10
• Updated status bit 1 under Program Page in Status Operations
Rev. G – 10/10
• Removed the words "or by factory (always enabled)" from the General Description
Rev. F – 06/10
• Replaced blank with 3 for number of valid address cycles on Block Erase Two-Plane in
the Two-Plane Command Set Table
Rev. E – 05/10
•
•
•
•
•
Changed status to Production
Added part numbers to document
Removed Endurance spec from Features and Parameter Page Data Structure Table
Filled in missing values to READ ID Table
Changed tBERS from .5 to .7 in Electrical Specifications – Program/Erase Characteristics
• Replaced Status Register Definition table with the correct one for ECC
Rev. D – 03/10
• Updated value for byte 113 to 01h; value for byte 114 to 0Eh in Parameter Page Data
Structure Tables
• Updated note 6 in Electrical Specifications - Program/Erase Characteristics to say
"disabled"
• Fixed note typo in Features
• Updated OTP Protect - changed to protect by block; removed protect by page
• Updated 1.8V Active Current specs for single die and fixed typos in DC tables
Rev. C – 01/10
• Updated READ ID Tables to include the following value changes: Byte 1 –
MT29F4G08ABBDA (4Gb, x8, 1.8V) Value: ACh, MT29F4G16ABBDA (4Gb, x16, 1.8V)
Value: BCh; Byte 2 – MT29F4G08ABBDA Value: 90h, MT29F4G16ABBDA Value: 90h;
Byte 3 – MT29F4G08ABBDA Value: 15h, MT29F4G16ABBDA Value: 55h; Byte 4 –
MT29F4G08ABBDA Value: 56h, MT29F4G16ABBDA Value: 56h; Removed H4 from
part numbers
• Added Bare Die Parameter Page Data Structure Table
• Removed Boot Block
Rev. B – 10/09
• Removed part numbers: MT29F4G08ABBDAWP and MT29F4G16ABBDAWP
• Updated "Internal Data Move with Internal ECC Enabled" graphic spec from tR to
tR_ECC
• Updated "Internal Data Move with Random Data Input with Internal ECC Enabled"
graphic spec from tR to tR_ECC
• Updated Boot Block Operation to include dual-plane restrictions
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Revision History
• Added tRCBSY spec to Electrical Specifications - Program/Erase Characteristics
• Added note for tPROG and tPROG_ECC specifications to Electrical Specifications Program/Erase Characteristics
• Moved note from tRHW to tRHZ in AC Characteristics and Operating Conditions
Rev. A – 07/09
• Initial release; Advance status
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www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
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