2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Features
NAND Flash Memory
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
Features
Figure 1:
• Organization:
• Page size:
x8: 2,112 bytes (2,048 + 64 bytes)
x16: 1,056 words (1,024 + 32 words)
• Block size: 64 pages (128K + 4K bytes)
• Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;
8Gb: 8,192 blocks
• Read performance:
• Random read: 25µs
• Sequential read: 30ns (3V x8 only)
• Write performance:
• Page program: 300µs (TYP)
• Block erase: 2ms (TYP)
• Endurance: 100,000 PROGRAM/ERASE cycles
• Data retention: 10 years
• First block (block address 00h) guaranteed to be
valid without ECC (up to 1,000 PROGRAM/ERASE
cycles)
• VCC: 2.7V–3.6V
• Automated PROGRAM and ERASE
• Basic NAND command set:
• PAGE READ, RANDOM DATA READ, READ ID,
READ STATUS, PROGRAM PAGE, RANDOM DATA
INPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE with
RANDOM DATA INPUT, BLOCK ERASE, RESET
• New commands:
• PAGE READ CACHE MODE
• READ UNIQUE ID (contact factory)
• READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
• PROGRAM/ERASE operation completion
• PROGRAM/ERASE pass/fail condition
• Write-protect status
• Ready/busy# (R/B#) pin provides a hardware
method of detecting PROGRAM or ERASE cycle
completion
• PRE pin: prefetch on power up
• WP# pin: hardware write protect
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__1.fm - Rev. I 1/06 EN
48-Pin TSOP Type 1
Options
Marking
• Density:
MT29F2GxxAAB
2Gb (single die)
MT29F4GxxBAB
4Gb (dual-die stack)
MT29F8GxxFAB
8Gb (quad-die stack)
• Device width:
MT29Fxx08x
x8
MT29Fxx16x
x16
• Configuration: # of
# of
# of
die
CE#
R/B#
1
1
1
A
2
1
1
B
4
2
2
F
A
• VCC: 2.7V–3.6V
• Second generation die
B
• Package:
48 TSOP type I (lead-free)
WP
48 TSOP type I (NEW version,
WA
8Gb device only, lead-free)
48 TSOP type I (contact factory)
WG
• Operating temperature:
Commercial (0°C to 70°C)
None
Extended temperature (-40°C to +85°C)
ET
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Part Numbering Information
Part Numbering Information
Micron® NAND Flash devices are available in several different configurations and
densities. (See Figure 2.)
Figure 2:
Part Number Chart
MT 29F 2G 08
A
A
B
WP
ES
Production Status
Micron Technology
Blank = Production
Product Family
ES = Engineering Sample
29F = Single-Supply NAND Flash Memory
MS = Mechanical Sample
Density
Operating Temperature Range
2G = 2Gb
Blank = Commercial (0°C to +70°C)
4G = 4Gb
ET = Extended (–40° to +85°C)
8G = 8Gb
Reserved for Future Use
Device Width
Reserved for Future Use
08 = 8 bits
16 = 16 bits
Package Codes
Classification
WP = 48-pin TSOP I (lead-free)
# of die # of CE# # of R/B#
WA = 48-pin TSOP I (new version,
I/O
A
1
1
1
Common
B
2
1
1
Common
F
4
2
2
Common
8Gb device only, lead-free)
WG = 48-pin TSOP I (contact factory)
Generation
Operating Voltage Range
A = 1st Generation Die
A = 3.3V (2.70V–3.60V)
B = 2nd Generation Die
C = 3rd Generation Die
Valid Part Number Combinations
After building the part number from the part numbering chart above, verify that the part
number is valid using the Micron Parametric Part Search Web site at
http://www.micron.com/partsearch to verify that the part number is offered and valid.
If the device required is not on this list, contact the factory.
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__1.fm - Rev. I 1/06 EN
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Table of Contents
Table of Contents
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Part Numbering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Valid Part Number Combinations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Addressing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Bus Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Control Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Address Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Data Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
READs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Ready/Busy# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Minimum Rp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Power-On AUTO-READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
READ Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
PAGE READ 00h-30h. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
RANDOM DATA READ 05h-E0h. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
PAGE READ CACHE MODE START 31h; PAGE READ CACHE MODE START LAST 3Fh. . . . . . . . . . . . . . . . . .24
READ ID 90h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
READ STATUS 70h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
PROGRAM Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
PROGRAM PAGE 80h-10h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
SERIAL DATA INPUT 80h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
RANDOM DATA INPUT 85h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
PROGRAM PAGE CACHE MODE 80h-15h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Internal Data Move . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
READ FOR INTERNAL DATA MOVE 00h-35h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
INTERNAL DATA MOVE 85h-10h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
BLOCK ERASE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
BLOCK ERASE 60h-D0h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
RESET FFh. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
WRITE PROTECT Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
Error Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
VCC Power Cycling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
Timing Diagrams. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56
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2gb_nand_m29bTOC.fm - Rev. I 1/06 EN
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
List of Figures
List of Figures
Figure 1:
Figure 2:
Figure 3:
Figure 4:
Figure 5:
Figure 6:
Figure 7:
Figure 8:
Figure 9:
Figure 10:
Figure 11:
Figure 12:
Figure 13:
Figure 14:
Figure 15:
Figure 16:
Figure 17:
Figure 18:
Figure 19:
Figure 20:
Figure 21:
Figure 22:
Figure 23:
Figure 24:
Figure 25:
Figure 26:
Figure 27:
Figure 28:
Figure 29:
Figure 30:
Figure 31:
Figure 32:
Figure 33:
Figure 34:
Figure 35:
Figure 36:
Figure 37:
Figure 38:
Figure 39:
Figure 40:
Figure 41:
Figure 42:
Figure 43:
Figure 44:
Figure 45:
Figure 46:
Figure 47:
Figure 48:
Figure 49:
Figure 50:
Figure 51:
48-Pin TSOP Type 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Part Number Chart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
NAND Flash Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Pin Assignment (Top View) 48-Pin TSOP Type 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Memory Map x8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Memory Map x16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Array Organization for MT29F2G08AxB (x8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Array Organization for MT29F2G16AxB (x16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Array Organization for MT29F4G08BxB and MT29F8G08FxB (x8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Array Organization for MT29F4G16BxB (x16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Time Constants . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
READY/BUSY# Open Drain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
tR and tF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Iol vs. Rp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
TC vs. Rp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
First Page Power-On AUTO-READ (3V VCC only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
AC Waveforms During Power Transitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
PAGE READ Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
RANDOM DATA READ Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
PAGE READ CACHE MODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
READ ID Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
Status Register Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
PROGRAM and READ STATUS Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
RANDOM DATA INPUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
PROGRAM PAGE CACHE MODE Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
INTERNAL DATA MOVE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32
INTERNAL DATA MOVE with RANDOM DATA INPUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32
BLOCK ERASE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
ERASE Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
ERASE Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
PROGRAM Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
PROGRAM Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
COMMAND LATCH Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
ADDRESS LATCH Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
INPUT DATA LATCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
SERIAL ACCESS Cycle After READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
STATUS READ Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44
PAGE READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44
READ Operation with CE# “Don’t Care” . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45
RANDOM DATA READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45
PAGE READ CACHE MODE Timing Diagram, Part 1 of 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .46
PAGE READ CACHE MODE Timing Diagram, Part 2 of 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .47
PAGE READ CACHE MODE Timing without R/B#, Part 1 of 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48
PAGE READ CACHE MODE Timing without R/B#, Part 2 of 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49
READ ID Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50
Program Operation with CE# “Don’t Care” . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50
PROGRAM PAGE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51
PROGRAM PAGE Operation with RANDOM DATA INPUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
INTERNAL DATA MOVE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
PROGRAM PAGE CACHE MODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
List of Figures
Figure 52:
Figure 53:
Figure 54:
Figure 55:
PROGRAM PAGE CACHE MODE Ending on 15h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54
BLOCK ERASE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55
RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55
48-Pin TSOP Type I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
List of Tables
List of Tables
Table 1:
Table 2:
Table 3:
Table 4:
Table 5:
Table 6:
Table 7:
Table 8:
Table 9:
Table 10:
Table 11:
Table 12:
Table 13:
Table 14:
Table 15:
Table 16:
Table 17:
Table 18:
Table 19:
Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Array Addressing: MT29F2G08AxB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Array Addressing: MT29F2G16AxB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Array Addressing: MT29F4G08BxB and MT29F8G08FxB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Array Addressing: MT29F4G16BxB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Mode Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Command Set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
Device ID and Configuration Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Status Register Bit Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Status Register Contents After RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
Absolute Maximum Ratings by Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
DC and Operating Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39
Valid Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40
AC Characteristics: Command, Data, and Address Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40
AC Characteristics: Normal Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41
PROGRAM/ERASE Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
General Description
General Description
NAND technology provides a cost-effective solution for applications requiring highdensity solid-state storage. The MT29F2G08AxB and MT29F2G16AxB are 2Gb NAND
Flash memory devices. The MT29F4G08BxB and MT29F4G16BxB are two-die stacks that
operate as a single 4Gb device. The MT29F8G08FAB is a four-die stack that operates as
two independent 4Gb devices (MT29F4G08BxB), providing a total storage capacity of
8Gb in a single, space-saving package. Micron NAND Flash devices include standard
NAND features as well as new features designed to enhance system-level performance.
Micron NAND Flash devices use a highly multiplexed 8- or 16-bit bus (I/O[7:0] or
I/O[15:0]) to transfer data, addresses, and instructions. The five command pins (CLE,
ALE, CE#, RE#, WE#) implement the NAND command bus interface protocol. Three
additional pins control hardware write protection (WP#), monitor device status (R/B#),
and initiate the auto-read feature (PRE—3V device only). Note that the PRE function is
not supported on extended-temperature devices.
This hardware interface creates a low-pin-count device with a standard pinout that is
the same from one density to another, allowing future upgrades to higher densities without board redesign.
MT29F2G and MT29F4G devices contain 2,048 and 4,096 erasable blocks respectively.
Each block is subdivided into 64 programmable pages. Each page consists of 2,112 bytes
(x8) or 1,056 words (x16). The pages are further divided into a 2,048-byte data storage
region with a separate 64-byte area on the x8 device; and on the x16 device, separate
1,024-word and 32-word areas. The 64-byte and 32-word areas are typically used for
error management functions.
The contents of each 2,112-byte page can be programmed in 300µs, and an entire 132Kbyte/66K word block can be erased in 2ms. On-chip control logic automates PROGRAM
and ERASE operations to maximize cycle endurance. ERASE/PROGRAM endurance is
specified at 100,000 cycles when using appropriate error correcting code (ECC) and
error management.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
General Description
Figure 3:
NAND Flash Functional Block Diagram
VCC
I/O [7:0]
I/O [15:0]
I/O
Control
VSS
Address Register
Status Register
Command Register
CE#
Column Decode
ALE
WE#
Row Decode
CLE
Control
Logic
RE#
WP#
Data Register
R/B#
Note:
Figure 4:
Cache Register
The PRE function is not supported on extended-temperature devices.
Pin Assignment (Top View) 48-Pin TSOP Type 1
x16
x8
NC
NC
NC
NC
NC
NC
R/B#
RE#
CE#
NC
NC
Vcc
Vss
NC
NC
CLE
ALE
WE#
WP#
DNU
DNU
DNU
NC
NC
NC
NC
NC
NC
NC
1
R/B2#
R/B#
RE#
CE#
1
CE2#
NC
Vcc
Vss
NC
NC
CLE
ALE
WE#
WP#
DNU
DNU
DNU
NC
NC
1●
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
x8
x16
NC
NC
NC
NC
I/O7
I/O6
I/O5
I/O4
NC
NC
PRE/VSS2
Vcc
Vss
NC
NC
NC
I/O3
I/O2
I/O1
I/O0
NC
NC
NC
NC
Vss
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
NC
PRE/VSS2
Vcc
NC
NC
NC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
Vss
Notes: 1. CE2# and R/B2# on 8Gb device only. These pins are NC for other configurations.
2. The PRE function is not supported on extended-temperature devices.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
General Description
Table 1:
Pin Descriptions
Symbol
Type
Description
ALE
Input
CE#, CE2#
Input
CLE
Input
PRE1
(3V device only)
RE#
WE#
WP#
Input
Address latch enable: During the time ALE is HIGH, address information is
transferred from I/O[7:0] into the on-chip address register upon a LOW-to-HIGH
transition on WE#. When address information is not being loaded, the ALE pin
should be driven LOW.
Chip enable: Gates transfers between the host system and the NAND device. Once
the device starts a PROGRAM or ERASE operation, the chip enable pin can be deasserted. For the 8Gb configuration, CE# controls the first 4Gb of memory; CE2#
controls the second 4Gb. See the Bus Operation section, starting on “Bus
Operation” on page 16 for additional operational details.
Command latch enable: When CLE is HIGH, information is transferred from
I/O[7:0] to the on-chip command register on the rising edge of WE#. When
command information is not being loaded, the CLE pin should be driven LOW.
Power-on read enable: Enables the auto-read function when at Vcc. See “Bus
Operation” on page 16, for additional details.
Read enable: Gates transfers from the NAND device to the host system.
Write enable: Gates transfers from the host system to the NAND device.
Write protect: Pin protects against inadvertent PROGRAM and ERASE operations.
All PROGRAM and ERASE operations are disabled when the WP# pin is LOW.
Data inputs/outputs: The bidirectional I/O pins transfer address, data, and
instruction information. Data is output only during READ operations; at other
times the I/O pins are inputs.
Input
Input
Input
I/O[7:0]
MT29FxG08
I/O
I/O[15:0]
MT29FxG16
R/B#, R/B2#
Output
VCC
VSS
DNU
NC
Supply
Supply
–
–
Ready/busy: An open-drain, active-LOW output, that uses an external pull-up
resistor. The pin is used to indicate when the chip is processing a PROGRAM or
ERASE operation. The pin is also used during a READ operation to indicate when
data is being transferred from the array into the serial data register. Once these
operations have completed, the R/B# returns to the High-Z state. In the 8Gb
configuration, R/B# is for the 4Gb of memory enabled by CE#; R/B2# is for the 4Gb
of memory enabled by CE2#.
VCC: The VCC pin is the power supply pin.
VSS: The VSS pin is the ground connection.
Do not use: Must be left floating.
No connect: NC pins are not internally connected. These pins can be driven or left
unconnected.
Notes: 1. The PRE function is not supported on extended-temperature devices.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Architecture
Architecture
These devices use NAND electrical and command interfaces. Data, commands, and
addresses are multiplexed onto the same pins. This provides a memory device with a
low pin count.
The internal memory array is accessed on a page basis. When doing reads, a page of data
is copied from the memory array into the data register. Once copied to the data register,
data is output sequentially, byte-by-byte on x8 devices, or word-by-word on x16 devices.
The memory array is programmed on a page basis. After the starting address is loaded
into the internal address register, data is sequentially written to the internal data register
up to the end of a page. After all of the page data has been loaded into the data register,
array programming is started.
In order to increase programming bandwidth, this device incorporates a cache register.
In the cache programming mode, data is first copied into the cache register and then
into the data register. Once the data is copied into the data register, programming
begins.
After the data register has been loaded and programming started, the cache register
becomes available for loading additional data. Loading the next page of data into the
cache register takes place while page programming is in process.
The INTERNAL DATA MOVE command also uses the internal cache register. Normally,
moving data from one area of external memory to another uses a large number of external memory cycles. By using the internal cache register and data register, array data can
be copied from one page and then programmed into another without using external
memory cycles.
Addressing
NAND Flash devices do not contain dedicated address pins. Addresses are loaded using
a five-cycle sequence as shown in Figures 7 and 8, on pages 12 and 13 respectively.
Table 2 on page 12 presents address functions internal to the x8 device; Table 3 on
page 13 covers the same functions for the x16 device. See Figures 5 and 6 on page 11 for
additional memory mapping and addressing details.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Addressing
Figure 5:
Memory Map x8
(4Gb: 3FFFF83Fh) 1FFFF83Fh
Spare Address within a page
(4Gb: 3FFC0000h) 1FFC0000h
A11
A5
A0
000BF83Fh
00080000h
0007F83Fh
00040000h
0003F83Fh
0
A28 (4Gb: A29)
A18
Block Address
Figure 6:
A17
page 63-0
A12
Page Address within a block
A11
A0
Column Address within a page
Memory Map x16
(4Gb: 1FFFFC1Fh) FFFF41Fh
Spare Address within a page
(4Gb: 1FFE0000h) FFE0000h
A10
A4
A0
005F41Fh
0040000h
003F41Fh
0020000h
001F41Fh
0
A27 (4Gb: A28)
Block Address
Note:
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A17
A16
page 63-0
A11
Page Address within a block
A10
A0
Column Address
Block address and page address = actual page address.
11
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Addressing
Figure 7:
Array Organization for MT29F2G08AxB (x8)
2,112 bytes
I/O 0
Cache Register
2,048
64
Data Register
2,048
64
I/O 7
64 pages = 1 block
(128K + 4K) bytes
1 Block
2,048 blocks
per device
1 page
= (2K + 64 bytes)
1 block
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
1 device = (2K + 64) bytes x 64 pages
x 2,048 blocks
= 2,112 Mb
Table 2:
Array Addressing: MT29F2G08AxB
Cycle
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
First
Second
Third
Fourth
Fifth
CA7
LOW
RA19
RA27
LOW
CA6
LOW
RA18
RA26
LOW
CA5
LOW
RA17
RA25
LOW
CA4
LOW
RA16
RA24
LOW
CA3
CA11
RA15
RA23
LOW
CA2
CA10
RA14
RA22
LOW
CA1
CA9
RA13
RA21
LOW
CA0
CA8
RA12
RA20
RA28
Note:
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CAx = column address; RAx = row address.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Addressing
Figure 8:
Array Organization for MT29F2G16AxB (x16)
1,056 words
I/O 0
Cache Register
1,024
32
Data Register
1,024
32
I/O 15
64 pages = 1 block
(64K + 2K) words
1 Block
2,048 blocks
per device
1 page
= (1K + 32) words
1 block
= (1K + 32) words x 64 pages
= (64K + 2K) words
1 device = (1K + 32) words x 64 pages
x 2,048 blocks
= 2,112 Mb
Table 3:
Cycle
First
Second
Third
Fourth
Fifth
Array Addressing: MT29F2G16AxB
I/O[15:8]
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
LOW
LOW
LOW
LOW
LOW
CA7
LOW
RA18
RA26
LOW
CA6
LOW
RA17
RA25
LOW
CA5
LOW
RA16
RA24
LOW
CA4
LOW
RA15
RA23
LOW
CA3
LOW
RA14
RA22
LOW
CA2
CA10
RA13
RA21
LOW
CA1
CA9
RA12
RA20
LOW
CA0
CA8
RA11
RA19
RA27
Notes: 1. CAx = column address; RAx = row address.
2. I/O[15:8] are not used during the addressing sequence and should be driven LOW.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Addressing
Figure 9:
Array Organization for MT29F4G08BxB and MT29F8G08FxB (x8)
2,112 bytes
I/O 0
Cache Register
2,048
64
Data Register
2,048
64
I/O 7
64 pages = 1 block
(128K + 4K) bytes
1 Block
4,096 blocks
1 page
= (2K + 64 bytes)
1 block
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
1 device = (2K + 64) bytes x 64 pages
x 4,096 blocks
= 4,224 Mb
Note:
Table 4:
For the 8Gb MT29F8G08F, the 4Gb array organization shown here applies to each chip
enable (CE# and CE2#).
Array Addressing: MT29F4G08BxB and MT29F8G08FxB
CAx = column address; RAx = row address.
Cycle
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
First
Second
Third
Fourth
Fifth
CA7
LOW
RA19
RA27
LOW
CA6
LOW
RA18
RA26
LOW
CA5
LOW
RA17
RA25
LOW
CA4
LOW
RA16
RA24
LOW
CA3
CA11
RA15
RA23
LOW
CA2
CA10
RA14
RA22
LOW
CA1
CA9
RA13
RA21
RA291
CA0
CA8
RA12
RA20
RA28
Notes: 1. Die address boundary: 0 = 0 – 2Gb, 1 = 2Gb – 4Gb.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Addressing
Figure 10:
Array Organization for MT29F4G16BxB (x16)
1,056 words
I/O 0
Cache Register
1,024
32
Data Register
1,024
32
I/O 15
64 pages = 1 block
(64K + 2K) words
1 Block
4,096 blocks
per device
1 page
= (1K + 32) words
1 block
= (1K + 32) words x 64 pages
= (64K + 2K) words
1 device = (1K + 32) words x 64 pages
x 4,096 blocks
= 4,224 Mb
Table 5:
Array Addressing: MT29F4G16BxB
CAx = column address; RAx = row address.
Cycle
First
Second
Third
Fourth
Fifth
I/O[15:8]
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
LOW
LOW
LOW
LOW
LOW
CA7
LOW
RA18
RA26
LOW
CA6
LOW
RA17
RA25
LOW
CA5
LOW
RA16
RA24
LOW
CA4
LOW
RA15
RA23
LOW
CA3
LOW
RA14
RA22
LOW
CA2
CA10
RA13
RA21
LOW
CA1
CA9
RA12
RA20
RA281
CA0
CA8
RA11
RA19
RA27
Notes: 1. Die address boundary: 0 = 0 – 2Gb, 1 = 2Gb – 4Gb.
2. I/O[15:8] are not used during the addressing sequence and should be driven LOW.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Bus Operation
Bus Operation
The bus on the MT29Fxxx devices is multiplexed. Data I/O, addresses, and commands
all share the same pins. I/O pins I/O[15:8] are used only for data in the x16 configuration. Addresses and commands are always supplied on I/O[7:0].
The command sequence normally consists of a command latch cycle, an ADDRESS
LATCH cycle, and a DATA cycle—either READ or WRITE.
Control Signals
CE#, WE#, RE#, CLE, ALE and WP# control Flash device READ and WRITE operations.
On the 8Gb MT29F8G08FAB, CE# and CE2# each control independent 4Gb arrays. CE2#
functions the same as CE# for its own array; all operations described for CE# also apply
to CE2#.
CE# is used to enable the device. When CE# is LOW and the device is not in the busy
state, the Flash memory will accept command, data, and address information.
When the device is not performing an operation, the CE# pin is typically driven HIGH
and the device enters standby mode. The memory will enter standby if CE# goes HIGH
while data is being transferred and the device is not busy. This helps reduce power consumption. See Figure 40 on page 45 and Figure 47 on page 50 for examples of CE# “Don’t
Care” operations.
The CE# “Don’t Care” operation allows the NAND Flash to reside on the same asynchronous memory bus as other Flash or SRAM devices. Other devices on the memory bus
can then be accessed while the NAND Flash is busy with internal operations. This capability is important for designs that require multiple NAND Flash devices on the same
bus. One device can be programmed while another is being read.
A HIGH CLE signal indicates that a command cycle is taking place. A HIGH ALE signal
signifies that an address input cycle is occurring.
Commands
Commands are written to the command register on the rising edge of WE# when:
• CE# and ALE are LOW, and
• CLE is HIGH, and
• The device is not busy
The exceptions to this are the READ STATUS and RESET commands. Commands are
transferred to the command register on the rising edge of WE#. See Figure 34 on page 42.
Commands are input on I/O[7:0] only. For devices with a x16 interface, I/O[15:8] must
be written with zeros when issuing a command.
Address Input
Addresses are written to the address register on the rising edge of WE# when:
• CE# and CLE are LOW, and
• ALE is HIGH, and
• The device is not busy
Addresses are input on I/O[7:0] only. For devices with a x16 interface, I/O[15:8] must be
written with zeros when issuing an address.
Generally all five ADDRESS cycles are written to the device. An exception to this is the
BLOCK ERASE command, which requires only three ADDRESS cycles. See “BLOCK
ERASE Operation” on page 33 for details.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Bus Operation
RANDOM DATA INPUT and OUTPUT commands need only column addresses, so only
two ADDRESS cycles are required. Refer to the command descriptions to determine the
addressing requirements for each command.
Data Input
Data is written to the data register on the rising edge of WE# when:
• CE#, CLE, and ALE are LOW, and
• The device is not busy
Data is input on I/O[7:0] for x8 devices, and I/O[15:0] on x16 devices. See Figure 36 on
page 43 for additional data input details.
READs
After a READ command is sent to the memory device, data is transferred from the memory array to the data register in tR. Typically tR is 25µs. When data is available in the data
register, it is clocked out of the part by RE# going LOW. See Figure 39 on page 44 for
detailed timing information.
The READ STATUS (70h) command or the R/B# signal can be used to determine when
the device is ready. See the STATUS READ command section on page 27 for details.
Ready/Busy#
The R/B# output provides a hardware method of indicating the completion of a PROGRAM/ERASE/READ operation. The signal is typically HIGH, and transitions to LOW
after the appropriate command is written to the device. The signal pin’s open-drain
driver enables multiple R/B# outputs to be OR-tied. The signal requires a pull-up resistor for proper operation. The READ STATUS command can be used in place of R/B#.
Typically R/B# would be connected to an interrupt pin on the system controller. See
Figure 12 on page 18.
On the 8Gb MT29F8G08FAB, R/B# provides an indication for the 4Gb section enabled by
CE#, and R/B2# does the same for the 4Gb section enabled by CE2#. R/B# and R/B2# can
be tied together, or they can be used separately to provide independent indications for
each 4Gb section.
The combination of Rp and capacitive loading of the R/B# circuit determines the rise
time of the R/B# pin. The actual value used for Rp (Rp = resistance of pull-up resistor)
depends on the system timing requirements. Large values of Rp cause R/B# to be
delayed significantly. At the 10- to 90-percent points on the R/B# waveform, rise time is
approximately two time constants (TC).
Figure 11:
Time Constants
TC = R × C
Where R = Rp (resistance of pull-up resistor), and C = total capacitive load.
The fall time of the R/B# signal is determined mainly by the output impedance of the
R/B# pin and the total load capacitance.
Refer to Figure 13 on page 18, and Figure 14 on page 19, which depict approximate Rp
values using a circuit load of 100pF.
The minimum value for Rp is determined by the output drive capability of the R/B# signal, the output voltage swing, and VCC.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Bus Operation
Minimum Rp
VCC (MAX) – VOL (MAX)
Rp (MIN, 3.3V part) =
3.2V
=
IOL + ΣIL
8mA + ΣIL
Where ΣIL is the sum of the input currents of all devices tied to the R/B# pin.
Figure 12:
READY/BUSY# Open Drain
Rp
VCC
R/B#
Open drain output
IOL
GND
Device
Figure 13:
t
R and tF
3.50
3.00
2.50
V
tF
2.00
tR
1.50
1.00
0.50
0.00
-1
0
2
4
0
2
4
6
TC
and tF calculated at 10 percent and 90 percent points.
R dependent on external capacitance and resistive loading and output transistor
impedance.
3. tR primarily dependent on external pull-up resistor and external capacitive loading.
4. tF ≈ 10ns at 3.3V.
5. See TC values in Figure 15 on page 19 for approximate Rp value and TC.
Notes: 1.
2.
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tR
t
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Bus Operation
Figure 14:
IOL vs. Rp
3.50mA
3.00mA
2.50mA
2.00mA
I
1.50mA
1.00mA
0.50mA
0.00mA
0
2000
4000
6000
8000
Rp
Figure 15:
10000
12000
IOL@3.60V (max)
TC vs. Rp
1.20µs
1.00µs
T
800ns
600ns
400ns
200ns
0ns
0
2kΩ
4kΩ
6kΩ
8kΩ
10kΩ
12kΩ
Rp
IOL@3.60V (max)
RC = TC
C = 100pF
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Bus Operation
Table 6:
Mode Selection
RE#
WP#1
PRE2
L
H
X
X
H
L
H
X
X
H
L
L
H
H
X
L
H
L
H
H
X
L
L
L
H
H
X
Data input
L
L
L
H
X
X
Sequential read and data output
L
X
X
X
X
L
X
X
X
X
L
X
X
X
H
H
X
X
X
X
X
H
H
L
0V/VCC
X
X
X
X
0V/VCC
CLE
ALE
CE#
H
L
L
WE#
H
X
X
X
X
Mode
Read mode
Command input
Address input
Write mode
Command input
Address input
During read (busy)
During program (busy)
During erase (busy)
Write protect
Standby
Notes: 1. WP# should be biased to CMOS HIGH or LOW for standby.
2. PRE should be tied to VCC or ground. Do not transition PRE during device operations.
The PRE function is not supported on extended-temperature devices.
3. Mode selection settings for this table: H = Logic level HIGH; L = Logic level LOW;
X = VIH or VIL.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Bus Operation
Power-On AUTO-READ
During power-on, with the PRE pin at VCC, 3V VCC devices automatically transfer the
first page of the memory array to the data register without requiring a command or
address-input sequence. As VCC reaches approximately 2.5V, the internal voltage detector initiates the power-on AUTO-READ function.
R/B# will stay LOW (tRPRE) while the first page of data is copied into the data register.
See Table 18 on page 41 for the tRPRE value. Once the READ is complete and R/B# goes
HIGH, RE# can be pulsed to output the first page of data.
The PRE function is not supported on extended-temperature devices.
Figure 16:
First Page Power-On AUTO-READ (3V VCC only)
≈ 2.5V1
Vcc
CLE
CE#
WE#
ALE
PRE
tRPRE
R/B#
RE#
1st
I/Ox
2nd
3rd
.....
n th
Undefined
Notes: 1. Verified per device characterization; not 100 percent tested on all devices.
2. The PRE function is not supported on extended-temperature devices.
Figure 17:
AC Waveforms During Power Transitions
3V device: ≈ 2.5V
3V device: ≈ 2.5V
Vcc
HIGH
WP#
WE#
10µs
R/B#
Don't Care
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Undefined
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
Command Definitions
Table 7:
Command Set
Operation
PAGE READ
PAGE READ CACHE MODE START1
PAGE READ CACHE MODE START LAST1
READ for INTERNAL DATA MOVE2
RANDOM DATA READ3
READ ID
READ STATUS
PROGRAM PAGE
PROGRAM PAGE CACHE1
PROGRAM for INTERNAL DATA MOVE2
RANDOM DATA INPUT for PROGRAM 4
BLOCK ERASE
RESET
Cycle 1
Cycle 2
Valid During Busy
00h
31h
3Fh
00h
05h
90h
70h
80h
80h
85h
85h
60h
FFh
30h
–
–
35h
E0h
–
–
10h
15h
10h
–
D0h
–
No
No
No
No
No
No
Yes
No
No
No
No
No
Yes
Notes: 1. Do not cross die address boundaries when using cache operations. See Tables 4 and 5 for
definition of die address boundaries.
2. Do not cross die address boundaries when using READ for INTERNAL DATA MOVE and
PROGRAM FOR INTERNAL DATA MOVE. See Tables 4 and 5 for definition of die address
boundaries.
3. RANDOM DATA READ command limited to use within a single page.
4. RANDOM DATA INPUT for PROGRAM command limited to use within a single page.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
READ Operations
PAGE READ 00h-30h
On initial power up, each device defaults to read mode. To enter the read mode while in
operation, write the 00h-30h command sequence to the command register along with
the five ADDRESS cycles.
Writing 00h to the command register starts the ADDRESS LATCH cycle. Five ADDRESS
cycles are input next. Finally the 30h command is loaded into the command register.
While monitoring the read status to determine when the tR (transfer from Flash array to
data register) is complete, the user must re-issue the READ (00h) command to make the
change from STATUS to DATA. (See Figure 44 on page 48 and Figure 45 on page 49 for
examples.) After the READ command has been re-issued, pulsing the RE# line will result
in outputting data, starting from the initial column address.
A serial page read sequence outputs a complete page of data. After 30h is written, the
page data is transferred to the data register, and R/B# goes LOW during the transfer.
When the transfer to the data register is complete, R/B# returns HIGH. At this point, data
can be read from the device. Starting from the initial column address to the end of the
page, read the data by repeatedly pulsing RE# at the maximum tRC rate. (See Figure 18
on page 23.)
Figure 18:
PAGE READ Operation
CLE
CE#
WE#
ALE
tR
R/B#
RE#
I/Ox
00h
30h
Address (5 Cycles)
Data Output (Serial Access)
Don‘t Care
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
RANDOM DATA READ 05h-E0h
The RANDOM DATA READ command enables the user to specify a new column address
so the data at single or multiple addresses can be read. The random read mode is
enabled after a normal PAGE READ (00h-30h sequence).
Random data can be output after the initial page read by writing an 05h-E0h command
sequence along with the new column address (two cycles).
The RANDOM DATA READ command can be issued without limit within the page.
Only data on the current page can be read. Pulsing the RE# pin outputs data sequentially. See Figure 19 on page 24.
Figure 19:
RANDOM DATA READ Operation
tR
R/B#
RE#
I/Ox
00h
Address
(5 Cycles)
30h
Data Output
05h
Address
(2 Cycles)
E0h
Data Output
PAGE READ CACHE MODE START 31h; PAGE READ CACHE MODE START LAST 3Fh
Micron NAND Flash devices have a cache register that can be used to increase READ
operation speed when accessing sequential pages in a block.
First, a normal PAGE READ (00h-30h) command sequence is issued. (See Figure 20 on
page 25 for operation details.) The R/B# signal goes LOW for tR during the time it takes
to transfer the first page of data from the memory to the data register. After R/B# returns
to HIGH, the PAGE READ CACHE MODE START (31h) command is latched into the
command register. R/B# goes LOW for tDCBSYR1 while data is being transferred from
the data register to the cache register. Once the data register contents are transferred to
the cache register, another PAGE READ is automatically started as part of the 31h command. Data is transferred from the next sequential page of the memory array to the data
register during the same time data is being read serially (pulsing of RE#) from the cache
register. If the total time to output data exceeds tR, then the PAGE READ is hidden.
The second and subsequent pages of data are transferred to the cache register by issuing
additional 31h commands. R/B# will stay LOW up to tDCBSYR2. This time can vary,
depending on whether the previous memory-to-data-register transfer was completed
prior to issuing the next 31h command. If the data transfer from memory to the data register is not completed before the 31h command is issued, R/B# stays LOW until the
transfer is complete.
It is not necessary to output a whole page of data before issuing another 31h command.
R/B# will stay LOW until the previous PAGE READ is complete and the data has been
transferred to the cache register.
To read out the last page of data, the PAGE READ CACHE MODE START LAST (3Fh)
command is issued. This command transfers data from the data register to the cache
register without issuing another PAGE READ. (See Figure 20 on page 25.)
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CLE
CE#
WE#
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RE#
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Don‘t Care
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
25
Data Output (Serial Access)
3fh
Data Output (Serial Access)
31h
Data Output (Serial Access)
tDCBSYR2
tDCBSYR2
tDCBSYR1
tR
31h
30h
Address (5 Cycles)
00h
I/Ox
PAGE READ CACHE MODE
Figure 20:
ALE
R/B#
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
READ ID 90h
The READ ID command is used to read the 4 bytes of identifier codes programmed into
the devices. The READ ID command reads a 4-byte table that includes Manufacturer’s
ID, device configuration, and part-specific information. See Table 8 on page 27, which
shows complete listings of all configuration details.
Writing 90h to the command register puts the device into the read ID mode. The command register stays in this mode until another valid command is issued. (See Figure 21.)
Figure 21:
READ ID Operation
CLE
CE#
WE#
tAR
ALE
RE#
tWHR
I/Ox
90h
tREA
00h
Byte 0
Byte 1
Byte 2
Address, 1 Cycle
Manufacturer
ID1
Device
ID1
Don't Care
Byte 31
Notes: 1. See Table 8 on page 27.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
Table 8:
Device ID and Configuration Codes
Options
Byte 0
Byte 1
MT29F2G08AAB
MT29F2G16AAB
MT29F4G08BAB
MT29F4G16BAB
MT29F8G08FAB
Byte 2
Byte value
Byte 3
Page size
Spare area size (bytes)
Block size (w/o spare)
Organization
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Value1
Manufacturer ID
Micron
Device ID
2Gb, x8, 3V
2Gb, x16, 3V
4Gb, x8, 3V
4Gb, x16, 3V
8Gb, x8, 3V
0
0
1
0
1
1
0
0
2Ch
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
1
0
1
0
1
1
1
1
1
1
0
0
1
1
1
1
1
0
0
0
0
0
0
0
0
DAh
CAh
DCh
CCh
DCh
Don’t Care
x
x
x
x
x
x
x
x
XXh
0
1
0
1
0
0
1
1
0
0
1
1
01b
01b
01b
0b
1b
0b
15h
55h
2KB
64
128KB
x8
x16
Reserved
Byte value
Byte value
x8
x16
0
1
0
0
1
1
0
1
0
0
0
0
1
Notes
2
Notes: 1. b = binary, h = hex
2. The MT29F8G08FAB device ID code reflects the configuration of each 4Gb section.
READ STATUS 70h
These NAND Flash devices have an 8-bit status register that the software can read during device operation. On the x16 device, I/O[15:8] are “0” when reading the status register. Table 9 on page 28 describes the status register.
After the READ STATUS command has been issued to the NAND Flash device, all subsequent READ cycles will output data from the status register until another command is
issued. Note that the RE# pin can be toggled multiple times without issuing a new READ
STATUS command, as shown in Figure 21. Each time the RE# pin is toggled, the updated
status will be output on I/O[7:0].
In addition, after a READ STATUS command has been issued to the NAND Flash device,
the status register provides continually updated output on I/O[7:0] as long as CE# and
RE# are held LOW, i.e., RE# does not have to be toggled.
Note that MT29FxGxxxAB devices do not support a READ STATUS operation in which
the READ STATUS (70h) command is repeatedly issued after each RE# toggle.
Additional details regarding READ STATUS implementation are available in Micron
technical note TN-29-13 at: www.micron.com/products/nand/massstorage/technote.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
Figure 22:
Status Register Operation
CE#
tCLEA
tCLR
CLE
WE#
tREA
RE#
Status
70h
I/Ox
Status
Status
Toggle RE# as required
While monitoring the read status to determine when the tR (transfer from Flash array to
data register) is complete, the user must re-issue the READ (00h) command to make the
change from STATUS to DATA. After the READ command has been re-issued, pulsing
the RE# line will output data, starting from the initial column address.
Table 9:
Status Register Bit Definition
SR
Bit
Page
Program
Program Page
Cache Mode
Page Read
Page Read
Cache Mode
Block Erase
0
Pass/fail
Pass/fail (N)
–
–
Pass/fail
1
–
Pass/fail (N-1)
–
–
2
3
4
5
–
–
–
Ready/busy
–
–
–
Ready/busy1
–
–
–
Ready/busy
–
–
–
Ready/busy1
6
Ready/busy
Ready/busy
7
Write protect
Ready/busy
cache2
Write protect
Write protect
Ready/busy
cache2
Write protect
[15:8]
–
–
–
–
Definition
“0” = Successful PROGRAM/ERASE
“1” = Error in PROGRAM/ERASE
–
“0” = Successful PROGRAM/ERASE
“1” = Error in PROGRAM/ERASE
–
“0”
–
“0”
–
“0”
Ready/busy “0” = Busy
“1” = Ready
Ready/busy “0” = Busy
“1” = Ready
Write protect “0” = Protected
“1” = Not protected
–
“0”
Notes: 1. Status register bit 5 is “0” during the actual programming operation. If cache mode is
used, this bit will be “1” when all internal operations are complete.
2. Status register bit 6 is “1” when the cache is ready to accept new data. R/B# follows bit 6.
See Figure 20 on page 25, and Figure 25 on page 30.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
PROGRAM Operations
PROGRAM PAGE 80h-10h
Micron NAND Flash devices are inherently page-programmed devices. Within a block,
the pages must be programmed consecutively from the least significant bit (LSB) page of
the block to most significant bit (MSB) pages of the block. Random page address programming is prohibited.
Micron NAND flash devices also support partial-page programming operations. This
means that any single bit can only be programmed one time before an erase is required;
however, the page can be partitioned such that a maximum of eight programming operations are allowed before an erase is required.
SERIAL DATA INPUT 80h
PAGE PROGRAM operations require loading the SERIAL DATA INPUT (80h) command
into the command register, followed by five ADDRESS cycles, then the data. Serial data
is loaded on consecutive WE# cycles starting at the given address. The PROGRAM (10h)
command is written after the data input is complete. The internal write state machine
automatically executes the proper algorithm and controls all the necessary timing to
program and verify the operation. Write verification only detects “1s” that are not successfully written to “0s.”
R/B# goes LOW for the duration of array programming time, tPROG. The READ STATUS
REGISTER (70h) command and the RESET (FFh) command are the only commands valid
during the programming operation. Bit 6 of the status register will reflect the state of
R/B#. When the device reaches ready, read bit 0 of the status register to determine if the
program operation passed or failed. (See Figure 23.) The command register stays in read
status register mode until another valid command is written to it.
RANDOM DATA INPUT 85h
After the initial data set is input, additional data can be written to a new column address
with the RANDOM DATA INPUT (85h) command. The RANDOM DATA INPUT command can be used any number of times in the same page prior to issuing the PAGE
WRITE (10h) command. See Figure 24 for the proper command sequence.
Figure 23:
PROGRAM and READ STATUS Operation
tPROG
R/B#
I/Ox
80h
Address (5 cycles)
DIN
70h
10h
Status
I/O 0 = 0 PROGRAM successful
I/O 0 = 1 PROGRAM error
Figure 24:
RANDOM DATA INPUT
tPROG
R/B#
I/Ox
80h
Address (5 cycles)
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DIN
85h
DIN
Address (2 cycles)
29
10h
70h
Status
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
PROGRAM PAGE CACHE MODE 80h-15h
Cache programming is actually a buffered programming mode of the standard PAGE
PROGRAM command. Programming is started by loading the SERIAL DATA INPUT
(80h) command to the command register, followed by five cycles of address, and a full or
partial page of data. The data is initially copied into the cache register, and the CACHE
WRITE (15h) command is then latched to the command register. Data is transferred
from the cache register to the data register on the rising edge of WE#. R/B# goes LOW
during this transfer time. After the data has been copied into the data register and R/B#
returns to HIGH, memory array programming begins.
When R/B# returns to HIGH, new data can be written to the cache register by issuing
another CACHE PROGRAM command sequence. The time that R/B# stays LOW will be
controlled by the actual programming time. The first time through equals the time it
takes to transfer the cache register contents to the data register. On the second and subsequent programming passes, transfer from the cache register to the data register is held
off until current data register content has been programmed into the array.
Bit 6 (Cache R/B#) of the status register can be read by issuing the READ STATUS (70h)
command to determine when the cache register is ready to accept new data. The R/B#
pin always follows bit 6.
Bit 5 (R/B#) of the status register can be polled to determine when the actual programming of the array is complete for the current programming cycle.
If just the R/B# pin is used to determine programming completion, the last page of the
program sequence must use the PROGRAM PAGE (10h) command instead of the
CACHE PROGRAM (15h) command. If the CACHE PROGRAM (15h) command is used
every time, including the last page of the programming sequence, status register bit 5
must be used to determine when programming is complete. (See Figure 25.)
Bit 0 of the status register returns the pass/fail for the previous page when bit 6 of the
status register is a “1” (ready state). The pass/fail status of the current PROGRAM operation is returned with bit 0 of the status register when bit 5 of the status register is a “1”
(ready state). (See Figure 25.)
Figure 25:
PROGRAM PAGE CACHE MODE Example
tCBSY
tCBSY
tCBSY
tLPROG1
R/B#
I/Ox
80h
Address/
Data Input
15h
80h
Address/
Data Input
15h
80h
Address/
Data Input
15h
80h
Address/
Data Input
10h
A: Without status reads
tCBSY
tLPROG1
R/B#
I/Ox
80h
Address/
Data Input
15h
70h
Status2
Output
80h
Address/
Data Input
10h
70h
Status2
Output
B: With status reads
Notes: 1. See Note 3, Table 19 on page 41.
2. Check I/O[6:5] for internal Ready/Busy. Check I/O[1:0] for pass fail. RE# can stay LOW or
pulse multiple times after a 70h command.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
Internal Data Move
An internal data move requires two command sequences. Issue a READ for INTERNAL
DATA MOVE (00h-35h) command first, then the INTERNAL DATA MOVE (85h-10h)
command. Data moves are only supported within the die from which data is read.
READ FOR INTERNAL DATA MOVE 00h-35h
This READ command is used in conjunction with the INTERNAL DATA MOVE (85h-10h)
command. First, (00h) is written to the command register, then the internal source
address is written (five cycles). After the address is input, the READ for INTERNAL DATA
MOVE (35h) command writes to the command register. This transfers a page from
memory into the cache register.
The written column addresses are ignored even though all five ADDRESS cycles are
required.
The memory device is now ready to accept the INTERNAL DATA MOVE (85h-10h) command. Please refer to the description of this command in the following section.
INTERNAL DATA MOVE 85h-10h
After the READ for INTERNAL DATA MOVE command has been issued and R/B# goes
HIGH, the INTERNAL DATA MOVE command can be written to the command register.
This command transfers the data from the cache register to the data register and programming of the new destination page begins. After the INTERNAL DATA MOVE command
and address sequence are written to the device, R/B# goes LOW while the internal control logic automatically programs the new page. The READ STATUS command and bit 6
of the status register can be used instead of the R/B# line to determine when the write is
complete. Bit 0 of the status register indicates if the operation was successful.
The RANDOM DATA INPUT (85h) command can be used during the INTERNAL DATA
MOVE command sequence to modify a word or multiple words of the original data.
First, data is copied into the cache register using the 00h-35h command sequence, then
the RANDOM DATA INPUT (85h) command is written along with the address of the data
to be modified next. New data is input on the external data pins. This copies the new
data into the cache register.
When 10h is written to the command register, the original data plus the modified data is
transferred to the data register, and programming of the new page is started. The RANDOM DATA INPUT command can be issued as many times as necessary before starting
the programming sequence with 10h. (See Figures 26 and 27 on page 32.)
Because the INTERNAL DATA MOVE operation does not utilize external memory, ECC
cannot be used to check for errors before programming the data to a new page. This can
lead to a data error if the source page contains a bit error due to charge loss or charge
gain. In the case that multiple INTERNAL DATA MOVE operations are performed, these
bit errors may accumulate without correction. For this reason, it is highly recommended
that systems utilizing the INTERNAL DATA MOVE operation use a robust ECC scheme
that can correct two or more bits per sector.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
Figure 26:
INTERNAL DATA MOVE
tPROG
tR
R/B#
I/Ox
00h
Figure 27:
Address
(5 cycles)
35h
85h
Address
(5 cycles)
10h
70h
Status
INTERNAL DATA MOVE with RANDOM DATA INPUT
tR
tPROG
R/B#
I/Ox
00h
Address
(5 cycles)
35h
85h
Address
(5 cycles)
Data
85h
Address
(2 cycles)
Data
10h
70h
Status
Unlimited number
of repetitions.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
BLOCK ERASE Operation
BLOCK ERASE 60h-D0h
Erasing occurs at the block level. For example, the MT29F2G08xxB device has 2,048
erase blocks organized as 64 2,112-byte (2,048 + 64 bytes) pages per block. Each block is
132K bytes (128K + 4K bytes). The BLOCK ERASE command operates on one block at a
time. (See Figure 28.)
Three cycles of addresses A[28:18] are required for the x8 device, and three cycles of
addresses [27:17] are required for the x16 device. Although addresses A[17:12] (x8) and
A[16:11] (x16) are loaded, they are a “Don’t Care” and are ignored for BLOCK ERASE
operations. (See Figures 5 and 6 on page 11 for addressing details.)
The actual command sequence is a two-step process. The ERASE SETUP (60h) command is first written to the command register. Then three cycles of addresses are written
to the device. Next, the ERASE CONFIRM (D0h) command is written to the command
register. At the rising edge of WE#, R/B# goes LOW and the internal write state machine
automatically controls the timing and erase-verify operations. R/B# stays LOW for the
entire tBERS erase time.
The READ STATUS REGISTER command can be used to check the status of the ERASE
operation. When bit 6 = “1” the erase operation is complete. Bit 0 indicates a pass/fail
condition where “0” = pass. (See Figure 28, and Table 9 on page 28.)
Figure 28:
BLOCK ERASE Operation
CLE
CE#
WE#
ALE
tBERS
R/B#
RE#
I/Ox
60h
Address Input (3 Cycles)
D0h
70h
Status
I/O 0 = 0 ERASE successful
I/O 0 = 1 ERASE error
Don‘t Care
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
RESET Operation
RESET FFh
The RESET command is used to put the memory device into a known condition and to
abort a command sequence in progress.
RANDOM READ, PROGRAM, and ERASE commands can be aborted while the device is
in the busy state. The contents of the memory location being programmed or the block
being erased are no longer valid. The data may be partially erased or programmed, and
is invalid. The command register is cleared and is ready for the next command.
The status register contains the value E0h when WP# is HIGH; otherwise it is written
with a 60h value. R/B# goes low for tRST after the RESET command is written to the
command register. (See Figure 29 and Table 10.)
Figure 29:
RESET Operation
CLE
CE#
tWB
WE#
tRST
R/B#
FF
I/Ox
RESET
Command
Table 10:
Status Register Contents After RESET Operation
Condition
Status
WP# HIGH
WP# LOW
Ready
Ready and write protected
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Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Hex
1
0
1
1
1
1
0
0
0
0
0
0
0
0
0
0
E0h
60h
34
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©2004 Micron Technology, Inc. All rights reserved.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
WRITE PROTECT Operation
The WRITE PROTECT feature protects the device against inadvertent PROGRAM and
ERASE operations. All PROGRAM and ERASE operations are disabled when WP# is LOW.
For WRITE PROTECT timing details, see Figures 30 through 33.
Figure 30:
ERASE Enable
WE#
tWW
I/Ox
60h
D0h
WP#
R/B#
Figure 31:
ERASE Disable
WE#
tWW
I/Ox
60h
D0h
WP#
R/B#
Figure 32:
PROGRAM Enable
WE#
tWW
I/Ox
80h
10h
WP#
R/B#
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Command Definitions
Figure 33:
PROGRAM Disable
WE#
tWW
I/Ox
80h
10h
WP#
R/B#
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Error Management
Error Management
Micron NAND devices are specified to have a minimum of 2,008 (NVB) valid blocks out
of every 2,048 total available blocks. This means the devices may have blocks that are
invalid when they are shipped. An invalid block is one that contains one or more bad
bits. Additional bad blocks may develop with use. However, the total number of available blocks will not fall below NVB during the endurance life of the product.
Although NAND memory devices may contain bad blocks, they can be used quite reliably in systems that provide bad-block mapping, replacement, and error correction
algorithms. This type of software environment ensures data integrity.
Internal circuitry isolates each block from other blocks, so the presence of a bad block
does not affect the operation of the rest of the Flash device.
The first block (physical block address 00h) for each CE# in Micron NAND devices is
guaranteed to be free of defects (up to 1,000 PROGRAM/ERASE cycles) when shipped
from the factory. This provides a reliable location for storing boot code and critical boot
information.
Before NAND Flash devices are shipped from Micron, they are erased. The factory identifies invalid blocks before shipping by programming data other than FFh (x8) or FFFFh
(x16) into the first spare location (column address 2,048 for x8 devices, or 1,024 for x16
devices) of the first or second page of each bad block.
System software should check the first spare address on the first or second page of each
block prior to performing any erase or programming operations on the Flash device. A
bad block table can then be created, allowing system software to map around these
areas. Factory testing is performed under worst-case conditions. Because blocks marked
“bad” may be marginal, it may not be possible to recover this information if the block is
erased.
Over time, some memory locations may fail to program or erase properly. In order to
ensure that data is stored properly over the life of the Flash device, certain precautions
must be taken, such as:
• Always check status after a WRITE, ERASE, or DATA MOVE operation.
• Use some type of error detection and correction algorithm to recover from single-bit
errors.
• Use a bad-block replacement algorithm.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Electrical Characteristics
Electrical Characteristics
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not guaranteed. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
Table 11:
Absolute Maximum Ratings by Device
Device
Symbol
MT29FxGxxxAx
MT29FxGxxxAx
Storage temperature
Short circuit output current, I/Os
Table 12:
VIN
VCC
TSTG
Supply voltage on any pin relative to Vss
Min
Max
Unit
–0.6
+4.6
V
–65
+150
5
°C
mA
Recommended Operating Conditions
Parameter/Condition
Symbol
Min
Typ
Max
Unit
Operating temperature
tA
0
–40
2.7
0
–
–
3.3
0
+70
+85
3.6
0
oC
Commercial
Extended
tA
Vcc
Vss
VCC supply voltage
Supply voltage
oC
V
V
VCC Power Cycling
Micron NAND Flash devices are designed to prevent data corruption during power transitions. VCC is internally monitored. When VCC goes below 2.0V, PROGRAM and ERASE
functions are disabled. WP# provides additional hardware protection. WP# should be
kept at VIL during power cycling. When VCC reaches 2.0V, a minimum of 10µs should be
allowed for the Flash to initialize before executing any commands. (See Figure 17 on
page 21.)
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Electrical Characteristics
Table 13:
DC and Operating Characteristics
Parameter
Sequential read current
Program current
Erase current
Standby current (TTL)
Standby current (CMOS)
MT29F2GxxAAB
Standby current (CMOS)
MT29F4GxxBAB
MT29F8G08FAB
Input leakage current
Output leakage current
Input high voltage
Input low voltage (all inputs)
Output high voltage
Output low voltage
Output low current (R/B#)
Note:
Table 14:
Conditions
Symbol
Min
Typ
Max
Unit
CYCLE = 30ns,
CE# = VIL,
IOUT = 0mA
–
–
CE# = VIH,
PRE = WP# = 0V/VCC
CE# = VCC - 0.2V,
PRE = WP# = 0V/VCC
CE# = VCC - 0.2V,
PRE = WP# = 0V/VCC
Icc1
–
15
30
mA
ICC2
ICC3
ISB1
–
–
–
15
15
–
30
30
1
mA
mA
mA
ISB2
–
10
50
µA
ISB2
–
20
100
µA
ILI
ILO
VIH
–
–
0.8 x Vcc
–
–
–
±10
±10
VCC + 0.3
µA
µA
V
VIL
VOH
VOL
IOL (R/B#)
-0.3
2.4
–
8
–
–
–
10
0.8
–
0.4
–
V
V
V
mA
t
VIN = 0V to VCC
VOUT = 0V to VCC
I/O [7–0], I/O [15–0]
CE#, CLE, ALE, WE#,
RE#, WP#, PRE, R/B#
–
IOH = -400µA
IOL = 2.1mA
VOL = 0.4V
The PRE function is not supported on extended-temperature devices.
Valid Blocks
Parameter
Number of valid blocks
Symbol
Device
Min
Max
Unit
Notes
NVB
MT29F2GxxAAB
MT29F4GxxBAB
MT29F8G08FAB
2,008
4,016
8,032
2,048
4,096
8,192
Blocks
1, 2
Notes: 1. Invalid blocks are blocks that contain one or more bad bits. The device may contain bad
blocks upon shipment. Additional bad blocks may develop over time; however, the total
number of available blocks will not drop below NVB during the endurance life of the
device. Do not erase or program blocks marked invalid by the factory.
2. Block 00h (the first block) is guaranteed to be valid and does not require error correction
up to 1,000 PROGRAM/ERASE cycles.
Table 15:
Capacitance
Description
Symbol
Device
Max
Unit
Notes
Input capacitance
CIN
1, 2
CIO
10
20
40
10
20
40
pF
Input/output capacitance (I/O)
MT29F2GxxAAB
MT29F4GxxBAB
MT29F8G08FAB
MT29F2GxxAAB
MT29F4GxxBAB
MT29F8G08FAB
pF
1, 2
Notes: 1. These parameters are verified in device characterization and are not 100 percent tested.
2. Test conditions: Tc = 25°C; f = 1 MHz; VIN = 0V.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Electrical Characteristics
Table 16:
Test Conditions
Parameter
Input pulse levels: MT29FxGxxxAB
Input rise and fall times
Input and output timing levels
Output load
MT29FxGxxxAB (VCC = 3.0V ±10%)
MT29FxGxxxAB (VCC = 3.3V ±10%)
Value
Notes
0.0V to 3.3V
5ns
VCC/2
1 TTL GATE and CL = 50pF
1 TTL GATE and CL = 100pF
1
Notes: 1. Verified in device characterization; not 100 percent tested.
Table 17:
AC Characteristics: Command, Data, and Address Input
x16
x8
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
ALE to data start
ALE hold time
ALE setup time
CE# hold time
CLE hold time
CLE setup time
CE# setup time
Data hold time
Data setup time
Write cycle time
WE# pulse width HIGH
WE# pulse width
WP# setup time
tADL
100
10
25
10
10
25
35
10
20
45
15
25
30
–
–
–
–
–
–
–
–
–
–
–
–
–
100
5
10
5
5
10
15
5
10
30
10
15
30
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
2
2
2
2
2
2
2
2
2
2
2
tALH
tALS
tCH
tCLH
tCLS
tCS
tDH
tDS
tWC
tWH
tWP
tWW
Notes: 1. Timing for tADL begins in the ADDRESS cycle, on the final rising edge of WE#, and ends
with the first rising edge of WE# for data input.
2. For PROGRAM PAGE CACHE MODE operations, the x16 AC characteristics apply for both
x16 and x8 devices.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Electrical Characteristics
Table 18:
AC Characteristics: Normal Operation
x16
Parameter
Symbol
ALE to RE# delay
CE# access time
CE# HIGH to output High-Z
CLE access time
CLE to RE# delay
Cache busy in page read cache
mode (first 31h)
Cache busy in page read cache
mode (next 31h and 3Fh)
Ouput High-Z to RE# LOW
Data output hold time
Data transfer from Flash array to
data register
READ cycle time
RE# access time
RE# HIGH hold time
RE# HIGH to output High-Z
RE# pulse width
Data transfer from Flash array to
data register at power-up with
PRE enabled @ 3.3V Vcc
Ready to RE# LOW
Reset time
(READ/PROGRAM/ERASE)
WE# HIGH to busy
WE# HIGH to RE# LOW
tAR
Min
Max
Min
10
–
–
–
10
–
–
45
20
45
–
3
tDCBSYR1
t
CEA
CHZ
tCLEA
t
CLR
tDCBSYR1
t
t
DCBSYR2
x8
tIR
tOH
tR
tRC
tREA
tREH
tRHZ
tRP
tRPRE
tRR
tRST
tWB
tWHR
Max
Unit
Notes
10
–
–
–
10
–
23
20
28
–
3
ns
ns
ns
ns
ns
µs
25
tDCBSYR1
25
µs
0
15
–
–
–
25
0
15
–
–
–
25
ns
ns
µs
1
50
–
15
–
25
–
–
30
–
30
–
25
30
–
10
–
15
–
–
18
–
30
–
25
ns
ns
ns
ns
ns
µs
1
1
1
2
1
3
20
–
–
5/10/500
20
–
–
5/10/500
ns
µs
4
–
60
100
–
–
60
100
–
ns
ns
1
2
1
4, 5
Notes: 1. For PROGRAM PAGE CACHE MODE operations, the x16 AC Characteristics apply for both
x16 and x8 devices.
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is
sampled and not 100 percent tested.
3. The PRE function is not supported on extended-temperature devices.
4. If RESET (FFh) command is loaded at ready state, the device goes busy for maximum 5µs.
5. Do not issue a new command during tWB, even if R/B# is ready.
Table 19:
PROGRAM/ERASE Characteristics
Parameter
Number of partial page programs
Block erase time
Busy time for cache program
Last page program time
Page program time
Notes: 1.
2.
3.
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Symbol
Typ
Max
Unit
Notes
NOP
BERS
tCBSY
tLPROG
tPROG
–
2
3
–
300
8
3
700
–
700
Cycle
ms
µs
–
µs
1
t
2
3
Eight total to the same page.
MAX time depends on timing between internal program completion and data in.
tLPROG = tPROG (last page) + tPROG (last – 1 page) – cmd load time (last page) – addr load
time (last page) – data load time (last page).
tCBSY
41
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©2004 Micron Technology, Inc. All rights reserved.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
Timing Diagrams
Figure 34:
COMMAND LATCH Cycle
CLE
tCLS
tCLH
tCS
tCH
CE#
tWP
WE#
tALS
tALH
tDS
tDH
ALE
I/Ox
COMMAND
Don‘t Care
Note:
Figure 35:
x16: I/O[15:8] must be set to “0.
ADDRESS LATCH Cycle
CLE
tCLS
tCS
tWC
CE#
tWH
tWP
WE#
tALS
tALH
tDS
tDH
ALE
I/Ox
Address
Don‘t Care
Note:
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Undefined
x16: I/O [15:8] must be set to “0.”
42
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
Figure 36:
INPUT DATA LATCH
CLE
tCLH
CE#
tALS
tCH
ALE
tWC
tWP
tWP
tWP
WE#
tWH
tDS
tDH
tDS
DIN 0
I/Ox
tDH
tDS
tDH
DIN Final1
DIN 1
Don‘t Care
Notes: 1. DIN Final = 2,111 (x8) or 1,055 (x16).
Figure 37:
SERIAL ACCESS Cycle After READ
tCEA
CE#
tREA
t
tREA
tRP
tREH
tCHZ
REA
tOH
RE#
t
RHZ
tRHZ
tOH
DOUT
I/Ox
tRR
DOUT
DOUT
tRC
R/B#
Don‘t Care
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
Figure 38:
STATUS READ Cycle
tCLEA
tCLR
CLE
tCLS
tCLH
tCS
CE#
tCH
tWP
WE#
tCEA
tWHR
tCHZ
tRP
tOH
RE#
tRHZ
tOH
tDS
tDH
tIR
tREA
70h
I/Ox
Status Output
Don‘t Care
Figure 39:
PAGE READ
CLE
tCLR
CE#
tWC
WE#
tWB
tAR
ALE
tRC
tRHZ
RE#
tRR
I/Ox
00h
Col
Add 1
Col
Add 2
Row
Add 1
Row
Add 2
Row
Add 3
tRP
DOUT
N
30h
DOUT
N+1
DOUT
M
tR
Busy
R/B#
Don‘t Care
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
Figure 40:
READ Operation with CE# “Don’t Care”
CLE
tCEA
CE#
tREA
RE#
ALE
tR
R/B#
WE#
I/Ox
00h
Address (5 Cycles)
30h
Data Output
Don‘t Care
Figure 41:
RANDOM DATA READ
tCLEA
CLE
tCLR
CE#
WE#
tWB
tWHR
tAR
ALE
tRC
tREA
RE#
tRR
I/Ox
00h
Col
Add 1
Col
Add 2
Row
Add 1
Row
Add 2
Row
Add 3
30h
DOUT
DOUT
N
N+1
05h
Col
Add 1
Col
Add 2
E0h
DOUT
DOUT
M
M+1
tR
Busy
R/B#
Don’t Care
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Figure 42:
PAGE READ CACHE MODE Timing Diagram, Part 1 of 2
CLE
tCLS
tCLH
tCS
tCH
CE#
tWC
WE#
tCEA
ALE
tRC
RE#
tWB
tR
tDS tDH
00h
Col
Add 1
Col
Add 2
Row
Add 1
Column Address
00h
Row
Add 2
Row
Add 3
Page Address
M
30h
tREA
DOUT
0
31h
tDCBSYR1
DOUT
1
DOUT
0
31h
DOUT
tDCBSYR2
Page Address
M
Page Address
M+1
46
R/B#
Column Address 0
Column Address 0
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Continued to 1
of next page
Don’t Care
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
I/Ox
tRR
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Figure 43:
PAGE READ CACHE MODE Timing Diagram, Part 2 of 2
CLE
tCLS
tCLH
tCS
tCH
CE#
WE#
tCEA
ALE
tRC
RE#
tWB
tRR
DOUT
tREA
31h
DOUT
0
tDCBSYR2
DOUT
1
47
Page Address
M+1
DOUT
DOUT
0
31h
tDCBSYR2
DOUT
1
Page Address
M+2
DOUT
DOUT
0
3Fh
tDCBSYR2
DOUT
1
DOUT
Page Address
M+x
R/B#
Column Address 0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
1
Continued from 1
of previous page
Column Address 0
Column Address 0
Don’t Care
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
I/Ox
tDS tDH
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Figure 44:
PAGE READ CACHE MODE Timing without R/B#, Part 1 of 2
CLE
tCLS tCLH
tCS
tCH
CE#
tWC
WE#
tCEA
ALE
tRC
RE#
I/Ox
00h
Col
Add 1
Col
Add 2
Row
Add 1
48
Column Address
00h
Row
Add 2
Row
Add 3
Page Address
M
30h
70h
Status
I/O 5 = 0, Busy
= 1, Ready
31h
70h
Status
00h
I/O 6 = 0, Cache Busy
= 1, Cache Ready
DOUT
0
DOUT
1
31h
DOUT
Page Address
M
70h
Status
00h
I/O 6 = 0, Cache Busy
= 1, Cache Ready
Column Address 0
DOUT
0
Page Address
M+1
Column Address 0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
1
Continued to 1
of next page
Don’t Care
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
tREA
tDS tDH
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Figure 45:
PAGE READ CACHE MODE Timing without R/B#, Part 2 of 2
CLE
tCLS
tCLH
tCS
tCH
CE#
WE#
tCEA
ALE
tRC
RE#
I/Ox
31h
DOUT
tREA
70h
00h
Status
49
I/O 6 = 0, Cache Busy
= 1, Cache Ready
DOUT
0
Page Address
M+1
Column Address 0
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©2004 Micron Technology, Inc. All rights reserved.
1
Continued from 1
of previous page
DOUT
1
DOUT
31h
70h
Status
I/O 6 = 0, Cache Busy
= 1, Cache Ready
00h
DOUT
0
DOUT
1
Page Address
M+2
Column Address 0
DOUT
3Fh
70h
Status
I/O 6 = 0, Cache Busy
= 1, Cache Ready
00h
DOUT
0
DOUT
1
DOUT
Page Address
M+x
Column Address 0
Don’t Care
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
tDS tDH
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
Figure 46:
READ ID Operation
CLE
CE#
WE#
tAR
ALE
RE#
tWHR
90h
I/Ox
Figure 47:
tREA
Byte 1
00h
Byte 0
Address, 1 Cycle
Manufacturer ID
1
Byte 2
1
Device ID
Byte 31
Don't Care
Program Operation with CE# “Don’t Care”
CLE
tCS
tCH
CE#
tWP
WE#
ALE
I/Ox
80h
Address (5 Cycles)
Data
Input
Data
Input
10h
Don‘t Care
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
Figure 48:
PROGRAM PAGE Operation
CLE
CE#
tWC
tADL
WE#
tWB
tPROG
ALE
RE#
I/Ox
80h
Col
Add 1
SERIAL DATA
INPUT Command
Col
Add 2
Row
Add 1
Row
Add 2
Row
Add 3
DIN
N
DIN
M
1 up to m Byte
Serial Input
10h
70h
PROGRAM
Command
READ STATUS
Command
Status
R/B#
x8 device: m = 2,111 byte
x16 device: m = 1,055 byte
Don‘t Care
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
Figure 49:
PROGRAM PAGE Operation with RANDOM DATA INPUT
CLE
CE#
tWC
tADL
tADL
WE#
tWB
tPROG
ALE
RE#
I/Ox
80h
Col
Add 1
Col
Add 2
Row
Add 1
Row
Add 2
Row
Add 3
DIN
N
SERIAL DATA
INPUT Command
DIN
N+1
85h
Col
Add 1
Col
Add 2
DIN
N
RANDOM DATA Column Address
Serial Input INPUT Command
DIN
N+1
Serial Input
10h
70h
PROGRAM
Command
READ STATUS
Command
Status
R/B#
Don‘t Care
Figure 50:
INTERNAL DATA MOVE
CLE
CE#
tADL
tWC
WE#
tWB tPROG
tWB
ALE
tR
RE#
I/Ox
00h
Col
Add 1
Col
Add 2
Row
Add 1
Row
Add 2
Row
Add 3
35h
85h
Col
Add 1
Busy
Col
Add 2
Row
Add 1
Row
Add 2
Row
Add 3
Data
1
Data
N
10h
70h
Busy
Status
READ STATUS
Command
R/B#
INTERNAL
DATA MOVE
Don‘t Care
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
Figure 51:
PROGRAM PAGE CACHE MODE
CLE
CE#
tADL
tWC
WE#
tWB tCBSY
tWB tPROG
ALE
RE#
I/Ox
80h
Col
Add 1
Col
Add 2
Row
Add 1
Row
Add 2
Row
Add 3
DIN
N
SERIAL DATA
INPUT
DIN
M
Serial Input
15h
80h
Col
Add 1
Col
Add 2
Row
Add 1
Row
Add 2
Row
Add 3
PROGRAM
DIN
N
DIN
M
10h
70h
Status
PROGRAM
R/B#
Last Page - 1
Last Page
Don‘t Care
Note:
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PROGRAM PAGE CACHE MODE operations must not cross die address boundaries.
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Figure 52:
PROGRAM PAGE CACHE MODE Ending on 15h
CLE
CE#
tADL
tWC
WE#
ALE
RE#
I/Ox
80h
Col
Add 1
Col
Add 2
Row
Add 1
Row
Add 2
Row
Add 3
SERIAL DATA
INPUT
DIN
N
DIN
M
Serial Input
Last Page -1
15h
70h
Status
80h
Col
Add 1
Col
Add 2
Row
Add 1
Row
Add 2
Row
Add 3
PROGRAM
DIN
N
DIN
M
15h
70h
Status
70h
Status
PROGRAM
Last Page
Poll status until:
I/O6 = 1, Ready
To ensure PROGRAM success, last 2 pages:
I/O5 = 1, Ready
I/O0 = 0, Last page PROGRAM successful
I/O1 = 0, Last page -1 PROGRAM successful
54
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
Don‘t Care
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Timing Diagrams
Figure 53:
BLOCK ERASE Operation
CLE
CE#
tWC
WE#
tWB
tBERS
ALE
RE#
I/Ox
60h
Row
Add 1
Row
Add 2
Row
Add 3
Row Address
D0h
70h
ERASE
Command
READ STATUS
Command
Status
Busy
R/B#
AUTO BLOCK
ERASE SETUP
Command
Don‘t Care
Notes: 1. See Table 8 on page 27 for actual values.
Figure 54:
RESET Operation
CLE
CE#
tWB
WE#
tRST
R/B#
I/Ox
FF
RESET
Command
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Package Dimensions
Package Dimensions
Figure 55:
48-Pin TSOP Type I
PLASTIC PACKAGE MATERIAL: NOVOLAC EPOXY
20.00 ±0.25
PLATED LEAD FINISH: 90% Sn, 10% Pb OR 100%Sn
18.40 ±0.08
PACKAGE WIDTH AND LENGTH DO NOT
INCLUDE MOLD PROTRUSION. ALLOWABLE
PROTRUSION IS 0.25 PER SIDE.
0.25
0.50 TYP
PIN #1 INDEX
12.00 ±0.08
0.20 ±0.05
0.25
GAGE
PLANE
0.10
0.15
+0.03
-0.02
SEE DETAIL A
1.20 MAX
0.10
+0.10
-0.05
0.50 ±0.1
DETAIL A
0.80
Notes: 1. All dimensions in millimeters; MIN/MAX, or typical, as noted.
2. For design guidelines using the 8Gb device, see Micron technical note TN-29-09, at:
www.micron.com/products/nand/massstorage/technote.
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range
for production devices. Although considered final, these specifications are subject to change, as further product
development and data characterization sometimes occur.
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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Revision History
Revision History
Rev. I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1/06
• “Options” on page 1 and Figure 2 on page 2: Added new 8Gb-only version of the lead-free 48-pin TSOP.
• “Error Management” on page 37: Clarified addressing and bad block marking description.
• “VCC Power Cycling” on page 38: corrected to 2.0V for PROGRAM and ERASE operation disable.
Rev. H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9/05
• Updated READ STATUS 70h description.
Rev. G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9/05
• Clarified READ STATUS 70h description on page 27.
• Updated Figure 22 on page 28 and moved up under new description.
Rev. F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8/05
• Revised endurance feature on page 1: deleted “with ECC and invalid block mapping.”
• Updated tR functional description.
• Added data retention period.
• Clarified AC characteristics.
Rev. E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7/05
• Replaced DNU definition in Table 1 on page 9.
Rev. D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6/05
• Updated address latch diagram.
Rev. C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5/05
• Added WRITE PROTECT.
• Updated standby current descriptions.
Rev. B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4/05
• Updated package drawing.
Rev. A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4/05
• Initial Release
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