8Gb: x8, x16 Automotive DDR4 SDRAM
Features
Automotive DDR4 SDRAM
MT40A1G8
MT40A512M16
Options1
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
• Configuration
– 1 Gig x 8
– 512 Meg x 16
• 78-ball FBGA package (Pb-free) – x8
– 8mm x 12mm – Rev. B
– 7.5mm x 11mm – Rev. E, R
• 96-ball FBGA package (Pb-free) – x16
– 8mm x 14mm – Rev. B
– 7.5mm x 13.5mm – Rev. E
– 7.5mm x 13mm – Rev. R
• Timing – cycle time
– 0.625ns @ CL = 22 (DDR4-3200)
– 0.750ns @ CL = 18 (DDR4-2666)
– 0.833ns @ CL = 16 (DDR4-2400)
• Product certification
– Automotive
• Operating temperature
– Industrial (–40° ≤ T C ≤ 95°C)
– Automotive (–40° ≤ T C ≤ 105°C)
– Ultra-high (–40° ≤ T C ≤ 125°C)3
• Revision
VDD = V DDQ = 1.2V ±60mV
VPP = 2.5V –125mV/+250mV
On-die, internal, adjustable V REFDQ generation
1.2V pseudo open-drain I/O
Refresh time of 8192-cycle at T C temperature range:
– 64ms at –40°C to 85°C
– 32ms at 85°C to 95°C
– 16ms at 95°C to 105°C
– 8ms at 105°C to 125°C
16 internal banks (x8): 4 groups of 4 banks each
8 internal banks (x16): 2 groups of 4 banks each
8n-bit prefetch architecture
Programmable data strobe preambles
Data strobe preamble training
Command/Address latency (CAL)
Multipurpose register read and write capability
Write leveling
Self refresh mode
Low-power auto self refresh (LPASR)
Temperature controlled refresh (TCR)
Fine granularity refresh
Self refresh abort
Maximum power saving
Output driver calibration
Nominal, park, and dynamic on-die termination
(ODT)
Data bus inversion (DBI) for data bus
Command/Address (CA) parity
Databus write cyclic redundancy check (CRC)
Per-DRAM addressability
Connectivity test
JEDEC JESD-79-4 compliant
sPPR and hPPR capability
MBIST-PPR support (Die Revision R only)
AEC-Q100
PPAP submission
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Notes:
1
Marking
1G8
512M16
WE
SA, AG
JY
LY, AD
TD
-062E
-075E
-083E
A
IT
AT
UT
:B, :E, :R
1. Not all options listed can be combined to
define an offered product. Use the part
catalog search on http://www.micron.com
for available offerings.
2. The ×4 device is not offered and the mode
is not supported by the x8 or x16 device
even though some ×4 mode descriptions exist in the datasheet.
3. The UT option use based on automotive usage model. Contact Micron sales representative if you have questions.
4. -062E is only available for die Rev. E and die
Rev. R.
5. Preliminary for die Rev. R.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
8Gb: x8, x16 Automotive DDR4 SDRAM
Features
Table 1: Key Timing Parameters
Speed Grade1
Data Rate (MT/s)
Target CL-nRCD-nRP
-062E
3200
22-22-22
-075E
2666
18-18-18
13.5
13.5
13.5
-083E
2400
16-16-16
13.32
13.32
13.32
Note:
tAA
tRCD
(ns)
13.75
tRP
(ns)
13.75
(ns)
13.75
1. Refer to the Speed Bin Tables for backward compatibility.
Table 2: Addressing
Parameter
1024 Meg x 8
512 Meg x 16
4
2
BG[1:0]
BG0
4
4
Number of bank groups
Bank group address
Bank count per group
Bank address in bank group
Row addressing
BA[1:0]
BA[1:0]
64K (A[15:0])
64K (A[15:0])
1K (A[9:0])
1K (A[9:0])
1KB
2KB
Column addressing
Page
size1
Note:
1. Page size is per bank, calculated as follows:
Page size = 2COLBITS × ORG/8, where COLBIT = the number of column address bits and ORG = the number of
DQ bits.
Figure 1: Order Part Number Example
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CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
21
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Ball Assignments
Ball Assignments
Figure 4: 78-Ball x4, x8 Ball Assignments
9''
9664
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Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1
$1)1&
1)1&
1. See Ball Descriptions.
2. A comma “,” separates the configuration; a slash “/” defines a mode register selectable
function, command/address function, density, or package dependence.
3. Address bits (including bank groups) are density- and configuration-dependent (see Addressing).
22
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Ball Assignments
Figure 5: 96-Ball x16 Ball Assignments
$
$
9''4
9664
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Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
7
1. See Ball Descriptions.
2. A slash “/” defines a mode register selectable function, command/address function, density, or package dependence.
3. Address bits (including bank groups) are density- and configuration-dependent (see Addressing).
23
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Ball Descriptions
Ball Descriptions
The pin description table below is a comprehensive list of all possible pins for DDR4 devices. All pins listed may not be supported on the device defined in this data sheet. See
the Ball Assignments section to review all pins used on this device.
Table 3: Ball Descriptions
Symbol
Type
Description
A[17:0]
Input
Address inputs: Provide the row address for ACTIVATE commands and the column
address for READ/WRITE commands to select one location out of the memory array in
the respective bank. (A10/AP, A12/BC_n, WE_n/A14, CAS_n/A15, RAS_n/A16 have additional functions, see individual entries in this table.) The address inputs also provide
the op-code during the MODE REGISTER SET command. A16 is used on some 8Gb and
16Gb parts. A17 connection is part-number specific; Contact vendor for more information.
A10/AP
Input
Auto precharge: A10 is sampled during READ and WRITE commands to determine
whether auto precharge should be performed to the accessed bank after a READ or
WRITE operation. (HIGH = auto precharge; LOW = no auto precharge.) A10 is sampled during a PRECHARGE command to determine whether the PRECHARGE applies
to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged,
the bank is selected by the bank group and bank addresses.
A12/BC_n
Input
Burst chop: A12/BC_n is sampled during READ and WRITE commands to determine if
burst chop (on-the-fly) will be performed. (HIGH = no burst chop; LOW = burst chopped). See the Command Truth Table.
ACT_n
Input
Command input: ACT_n indicates an ACTIVATE command. When ACT_n (along with
CS_n) is LOW, the input pins RAS_n/A16, CAS_n/A15, and WE_n/A14 are treated as
row address inputs for the ACTIVATE command. When ACT_n is HIGH (along with
CS_n LOW), the input pins RAS_n/ A16, CAS_n/A15, and WE_n/A14 are treated as normal commands that use the RAS_n, CAS_n, and WE_n signals. See the Command
Truth Table.
BA[1:0]
Input
Bank address inputs: Define the bank (within a bank group) to which an ACTIVATE,
READ, WRITE, or PRECHARGE command is being applied. Also determines which
mode register is to be accessed during a MODE REGISTER SET command.
BG[1:0]
Input
Bank group address inputs: Define the bank group to which an ACTIVATE, READ,
WRITE, or PRECHARGE command is being applied. Also determines which mode register is to be accessed during a MODE REGISTER SET command. BG[1:0] are used in the
x4 and x8 configurations. BG1 is not used in the x16 configuration.
C0/CKE1,
C1/CS1_n,
C2/ODT1
Input
Stack address inputs: These inputs are used only when devices are stacked; that is,
they are used in 2H, 4H, and 8H stacks for x4 and x8 configurations (these pins are
not used in the x16 configuration, and are NC on the x4/x8 SDP). DDR4 will support a
traditional DDP package, which uses these three signals for control of the second die
(CS1_n, CKE1, ODT1). DDR4 is not expected to support a traditional QDP package. For
all other stack configurations, such as a 4H or 8H, it is assumed to be a single-load
(master/slave) type of configuration where C0, C1, and C2 are used as chip ID selects
in conjunction with a single CS_n, CKE, and ODT signal.
CK_t,
CK_c
Input
Clock: Differential clock inputs. All address, command, and control input signals are
sampled on the crossing of the positive edge of CK_t and the negative edge of CK_c.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
24
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Ball Descriptions
Table 3: Ball Descriptions (Continued)
Symbol
Type
Description
CKE
Input
Clock enable: CKE HIGH activates and CKE LOW deactivates the internal clock signals, device input buffers, and output drivers. Taking CKE LOW provides PRECHARGE
POWER-DOWN and SELF REFRESH operations (all banks idle), or active power-down
(row active in any bank). CKE is asynchronous for self refresh exit, however, timing
parameters such as tXS are still calculated from the first rising clock edge where CKE
HIGH satisfies tIS. After VREFCA has become stable during the power-on and initialization sequence, it must be maintained during all operations (including SELF REFRESH).
CKE must be maintained HIGH throughout read and write accesses. Input buffers (excluding CK_t, CK_c, ODT, RESET_n, and CKE) are disabled during power-down. Input
buffers (excluding CKE and RESET_n) are disabled during self refresh.
CS_n
Input
Chip select: All commands are masked when CS_n is registered HIGH. CS_n provides
for external rank selection on systems with multiple ranks. CS_n is considered part of
the command code.
DM_n,
UDM_n
LDM_n
Input
Input data mask: DM_n is an input mask signal for write data. Input data is masked
when DM is sampled LOW coincident with that input data during a write access. DM
is sampled on both edges of DQS. DM is not supported on x4 configurations. The
UDM_n and LDM_n pins are used in the x16 configuration: UDM_n is associated with
DQ[15:8]; LDM_n is associated with DQ[7:0]. The DM, DBI, and TDQS functions are enabled by mode register settings. See the Data Mask section.
ODT
Input
On-die termination: ODT (registered HIGH) enables termination resistance internal
to the DDR4 SDRAM. When enabled, ODT (RTT) is applied only to each DQ, DQS_t,
DQS_c, DM_n/DBI_n/TDQS_t, and TDQS_c signal for the x4 and x8 configurations
(when the TDQS function is enabled via mode register). For the x16 configuration, RTT
is applied to each DQ, UDQS_t, UDQS_c, LDQS_t, LDQS_c, UDM_n, and LDM_n signal.
The ODT pin will be ignored if the mode registers are programmed to disable RTT.
PAR
Input
Parity for command and address: This function can be enabled or disabled via the
mode register. When enabled, the parity signal covers all command and address inputs, including ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, A[17:0], A10/AP, A12/BC_n,
BA[1:0], and BG[1:0] with C0, C1, and C2 on 3DS only devices. Control pins NOT covered by the parity signal are CS_n, CKE, and ODT. Unused address pins that are density- and configuration-specific should be treated internally as 0s by the DRAM parity
logic. Command and address inputs will have parity check performed when commands are latched via the rising edge of CK_t and when CS_n is LOW.
RAS_n/A16,
CAS_n/A15,
WE_n/A14
Input
Command inputs: RAS_n/A16, CAS_n/A15, and WE_n/A14 (along with CS_n and
ACT_n) define the command and/or address being entered. See the ACT_n description in this table.
RESET_n
Input
Active LOW asynchronous reset: Reset is active when RESET_n is LOW, and inactive when RESET_n is HIGH. RESET_n must be HIGH during normal operation. RESET_n
is a CMOS rail-to-rail signal with DC HIGH and LOW at 80% and 20% of VDD (960 mV
for DC HIGH and 240 mV for DC LOW).
TEN
Input
Connectivity test mode: TEN is active when HIGH and inactive when LOW. TEN
must be LOW during normal operation. TEN is a CMOS rail-to-rail signal with DC
HIGH and LOW at 80% and 20% of VDD (960mV for DC HIGH and 240mV for DC
LOW). On Micron 3DS devices, connectivity test mode is not supported and the TEN
pin should be considered NF maintained LOW at all times.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
25
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Ball Descriptions
Table 3: Ball Descriptions (Continued)
Symbol
Type
Description
DQ
I/O
Data input/output: Bidirectional data bus. DQ represents DQ[3:0], DQ[7:0], and
DQ[15:0] for the x4, x8, and x16 configurations, respectively. If write CRC is enabled
via mode register, the write CRC code is added at the end of data burst. Any one or
all of DQ0, DQ1, DQ2, and DQ3 may be used to monitor the internal VREF level during
test via mode register setting MR[4] A[4] = HIGH, training times change when enabled. During this mode, the RTT value should be set to High-Z. This measurement is
for verification purposes and is NOT an external voltage supply pin.
DBI_n,
UDBI_n,
LDBI_n
I/O
DBI input/output: Data bus inversion. DBI_n is an input/output signal used for data
bus inversion in the x8 configuration. UDBI_n and LDBI_n are used in the x16 configuration; UDBI_n is associated with DQ[15:8], and LDBI_n is associated with DQ[7:0]. The
DBI feature is not supported on the x4 configuration. DBI is not supported for 3DS
devices and should be disabled in MR5. DBI can be configured for both READ (output) and WRITE (input) operations depending on the mode register settings. The DM,
DBI, and TDQS functions are enabled by mode register settings. See the Data Bus Inversion section.
DQS_t,
DQS_c,
UDQS_t,
UDQS_c,
LDQS_t,
LDQS_c
I/O
Data strobe: Output with READ data, input with WRITE data. Edge-aligned with
READ data, centered-aligned with WRITE data. For the x16, LDQS corresponds to the
data on DQ[7:0]; UDQS corresponds to the data on DQ[15:8]. For the x4 and x8 configurations, DQS corresponds to the data on DQ[3:0] and DQ[7:0], respectively. DDR4
SDRAM supports a differential data strobe only and does not support a single-ended
data strobe.
ALERT_n
Output
Alert output: This signal allows the DRAM to indicate to the system's memory controller that a specific alert or event has occurred. Alerts will include the command/
address parity error and the CRC data error when either of these functions is enabled
in the mode register.
TDQS_t,
TDQS_c
Output
Termination data strobe: TDQS_t and TDQS_c are used by x8 DRAMs only. When
enabled via the mode register, the DRAM will enable the same RTT termination resistance on TDQS_t and TDQS_c that is applied to DQS_t and DQS_c. When the TDQS
function is disabled via the mode register, the DM/TDQS_t pin will provide the DATA
MASK (DM) function, and the TDQS_c pin is not used. The TDQS function must be disabled in the mode register for both the x4 and x16 configurations. The DM function
is supported only in x8 and x16 configurations.
VDD
Supply
Power supply: 1.2V ±0.060V.
VDDQ
Supply
DQ power supply: 1.2V ±0.060V.
VPP
Supply
DRAM activating power supply: 2.5V –0.125V/+0.250V.
VREFCA
Supply
Reference voltage for control, command, and address pins.
VSS
Supply
Ground.
VSSQ
Supply
DQ ground.
ZQ
Reference
RFU
–
Reserved for future use.
NC
–
No connect: No internal electrical connection is present.
NF
–
No function: Internal connection is present but has no function.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Reference ball for ZQ calibration: This ball is tied to an external 240Ω resistor
(RZQ), which is tied to VSSQ.
26
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Package Dimensions
Package Dimensions
Figure 6: 78-Ball FBGA – x4, x8 (WE)
0.155
Seating plane
A
0.12 A
1.8 CTR
nonconductive
overmold
78X Ø0.47
Dimensions apply
to solder balls postreflow on Ø0.42 SMD
ball pads.
Ball A1 ID
(covered by SR)
Ball A1 ID
3 2 1
9 8 7
A
B
C
D
E
F
G
H
J
K
L
M
N
12 ±0.1
9.6 CTR
0.8 TYP
1.1 ±0.1
0.8 TYP
6.4 CTR
0.34 ±0.05
8 ±0.1
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1. All dimensions are in millimeters.
2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
3. Reference CSN33 for recommended PCB pad dimension for this package.
27
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Package Dimensions
Figure 7: 78-Ball FBGA – x4, x8 (SA)
0.155
Seating plane
A
0.12 A
1.8 CTR
nonconductive
overmold
78X Ø0.47
Dimensions apply
to solder balls postreflow on Ø0.42 SMD
ball pads.
Ball A1 ID
(covered by SR)
9 8 7
Ball A1 ID
3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
11 ±0.1
9.6 CTR
0.8 TYP
1.1 ±0.1
0.8 TYP
6.4 CTR
0.34 ±0.05
7.5 ±0.1
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1. All dimensions are in millimeters.
2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
3. Reference CSN33 for recommended PCB pad dimension for this package.
28
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Package Dimensions
Figure 8: 78-Ball FBGA – x4, x8 (AG)
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7 tMOD (MIN) + DODTLon + tADC
• DLL = Disable, then tWLDQSEN > tMOD (MIN) + tAONAS
Write Leveling Mode Exit
Write leveling mode should be exited as follows:
1. After the last rising strobe edge (see ~T0), stop driving the strobe signals (see
~Tc0). Note that from this point on, DQ pins are in undefined driving mode and
will remain undefined, until tMOD after the respective MR command (Te1).
2. Drive ODT pin LOW (tIS must be satisfied) and continue registering LOW (see
Tb0).
3. After RTT is switched off, disable write leveling mode via the MRS command (see
Tc2).
4. After tMOD is satisfied (Te1), any valid command can be registered. (MR commands can be issued after tMRD [Td1]).
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
80
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Write Leveling
Figure 24: Write Leveling Exit
CK_c
CK_t
Command
T0
T1
T2
DES
DES
DES
Ta0
Tb0
DES
DES
Tc0
Tc1
Tc2
DES
DES
DES
Td0
DES
Td1
Valid
Te0
DES
Te1
Valid
tMRD
MR1
Address
Valid
tIS
Valid
tMOD
ODT
tADC
ODTL (OFF)
RTT(DQS_t)
RTT(DQS_c)
RTT(Park)
tADC
DQS_t,
DQS_c
RTT(DQ)
(MIN)
RTT(NON)
(MAX)
tWLO
DQ1
result = 1
Undefined Driving Mode
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning
Time Break
Don’t Care
1. The DQ result = 1 between Ta0 and Tc0 is a result of the DQS signals capturing CK_t
HIGH just after the T0 state.
2. See previous figure for specific tWLO timing.
81
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8Gb: x8, x16 Automotive DDR4 SDRAM
Command Address Latency
Command Address Latency
DDR4 supports the command address latency (CAL) function as a power savings feature. This feature can be enabled or disabled via the MRS setting. CAL timing is defined
as the delay in clock cycles (tCAL) between a CS_n registered LOW and its corresponding registered command and address. The value of CAL in clocks must be programmed
into the mode register (see MR1 Register Definition table) and is based on the tCAL(ns)/
tCK(ns) rounding algorithms found in the Converting Time-Based Specifications to
Clock-Based Requirements section.
Figure 25: CAL Timing Definition
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
CLK
CS_n
CMD/ADDR
tCAL
CAL gives the DRAM time to enable the command and address receivers before a command is issued. After the command and the address are latched, the receivers can be
disabled if CS_n returns to HIGH. For consecutive commands, the DRAM will keep the
command and address input receivers enabled for the duration of the command sequence.
Figure 26: CAL Timing Example (Consecutive CS_n = LOW)
1
2
3
4
5
6
7
8
9
10
11
12
CLK
CS_n
CMD/ADDR
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8Gb: x8, x16 Automotive DDR4 SDRAM
Command Address Latency
When the CAL mode is enabled, additional time is required for the MRS command to
complete. The earliest the next valid command can be issued is tMOD_CAL, which
should be equal to tMOD + tCAL. The two following figures are examples.
Figure 27: CAL Enable Timing – tMOD_CAL
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Tb0
Tb1
Tb2
Tb3
Command
Valid
MRS
DES
DES
DES
DES
DES
DES
DES
Valid
Valid
Address
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
CK_c
CK_t
CS_n
tCAL
tMOD_CAL
Settings
Old settings
Updating settings
New settings
Time Break
Note:
Don’t Care
1. CAL mode is enabled at T1.
Figure 28: tMOD_CAL, MRS to Valid Command Timing with CAL Enabled
T0
T1
Valid
DES
Ta0
Ta1
Ta2
Tb0
Tb1
Tb2
DES
MRS
DES
DES
DES
DES
Tc0
Tc1
Tc2
DES
Valid
Valid
Valid
Valid
Valid
CK_c
CK_t
Command
tCAL
Address
Valid
Valid
tCAL
Valid
Valid
Valid
Valid
Valid
Valid
CS_n
tMOD_CAL
Settings
Old settings
Updating settings
New settings
Time Break
Note:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Don’t Care
1. MRS at Ta1 may or may not modify CAL, tMOD_CAL is computed based on new tCAL setting if modified.
83
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8Gb: x8, x16 Automotive DDR4 SDRAM
Command Address Latency
When the CAL mode is enabled or being enabled, the earliest the next MRS command
can be issued is tMRD_CAL is equal to tMOD + tCAL. The two following figures are examples.
Figure 29: CAL Enabling MRS to Next MRS Command, tMRD_CAL
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Tb0
Valid
MRS
DES
DES
DES
DES
DES
DES
Tb1
Tb2
Tb3
DES
MRS
DES
Valid
Valid
Valid
CK_c
CK_t
Command
tCAL
Address
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
CS_n
tMRD_CAL
Settings
Old settings
Updating settings
Updating settings
Time Break
Note:
Don’t Care
1. Command address latency mode is enabled at T1.
Figure 30: tMRD_CAL, Mode Register Cycle Time With CAL Enabled
7
7
7D
7D
7D
7E
7E
'(6
'(6
056
'(6
'(6
'(6
7E
7F
7F
7F
'(6
'(6
056
'(6
9DOLG
9DOLG
9DOLG
9DOLG
CK_c
CK_t
Command
9DOLG
W &$/
Address
9DOLG
W &$/
9DOLG
9DOLG
9DOLG
9DOLG
9DOLG
9DOLG
CS_n
W 05'B&$/
Settings
2OGVHWWLQJV
8SGDWLQJVHWWLQJV
1HZVHWWLQJV
7LPH%UHDN
Note:
'RQ¶W&DUH
1. MRS at Ta1 may or may not modify CAL, tMRD_CAL is computed based on new tCAL setting if modified.
CAL Examples: Consecutive READ BL8 with two different CALs and 1tCK preamble in
different bank group shown in the following figures.
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CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Figure 31: Consecutive READ BL8, CAL3, 1tCK Preamble, Different Bank Group
T0
T1
T2
T3
DES
READ
T4
T5
T6
T7
T13
T14
T15
DES
DES
READ
DES
DES
DES
T16
T17
T18
T19
T20
DES
DES
T21
T22
CK_c
CK_t
CS_n
t
t
CAL = 3
DES
Command
CAL = 3
DES
DES
DES
DES
DES
t
CCD_S = 4
Bank Group
Address
Address
BG a
BG b
Bank,
Col n
Bank,
Col b
tRPRE
tRPST
(1nCK)
DQS_t, DQS_c
DQ
DOUT
n
RL = 11
DOUT
n+1
DOUT
n+2
DOUT
n+3
DOUT
n+4
DOUT
n+5
DOUT
n+6
DOUT
n+7
DOUT
b
DOUT
b+7
DOUT
b+2
DOUT
b+3
DOUT
b+4
DOUT
b+5
DOUT
b+6
DOUT
b+7
RL = 11
Transitioning Data
Notes:
Don’t Care
85
BL = 8, AL = 0, CL = 11, CAL = 3, Preamble = 1tCK.
DOUT n = data-out from column n; DOUT b = data-out from column b.
DES commands are shown for ease of illustration, other commands may be valid at these times.
BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ command at T3 and
T7.
5. CA parity = Disable, CS to CA latency = Enable, Read DBI = Disable.
6. Enabling CAL mode does not impact ODT control timings. ODT control timings should be maintained with the
same timing relationship relative to the command/address bus as when CAL is disabled.
1.
2.
3.
4.
&.BF
&.BW
7
7
7
7
7
7
'(6
'(6
5($'
'(6
7
7
7
7
7
7
7
7
7
'(6
'(6
5($'
'(6
'(6
'(6
'(6
'(6
'(6
7
7
7
7
'(6
'(6
'(6
&6BQ
W
&RPPDQG
'(6
&$/
W
&$/
W
&&'B6
%DQN*URXS
$GGUHVV
%*D
%*E
$GGUHVV
%DQN
&ROQ
%DQN
&ROE
'(6
W 5367
W 535( Q&.
'46BW'46BF
'4
'287
Q
5/
'287
Q
'287
Q
'287
Q
'287
Q
'287
Q
'287
Q
'287
Q
'287
E
'287
E
'287
E
'287
E
'287
E
'287
E
'287
E
'287
E
5/
7UDQVLWLRQLQJ'DWD
Notes:
1.
2.
3.
4.
'RQ¶W&DUH
BL = 8, AL = 0, CL = 11, CAL = 4, Preamble = 1tCK.
DOUT n = data-out from column n; DOUT b = data-out from column b.
DES commands are shown for ease of illustration, other commands may be valid at these times.
BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ command at T4 and
T8.
8Gb: x8, x16 Automotive DDR4 SDRAM
Command Address Latency
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Figure 32: Consecutive READ BL8, CAL4, 1tCK Preamble, Different Bank Group
CCMTD-1406124318-10419
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5. CA parity = Disable, CS to CA latency = Enable, Read DBI = Disable.
6. Enabling CAL mode does not impact ODT control timings. ODT control timings should be maintained with the
same timing relationship relative to the command/address bus as when CAL is disabled.
86
8Gb: x8, x16 Automotive DDR4 SDRAM
Command Address Latency
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8Gb: x8, x16 Automotive DDR4 SDRAM
Low-Power Auto Self Refresh Mode
Low-Power Auto Self Refresh Mode
An auto self refresh mode is provided for application ease. Auto self refresh mode is enabled by setting MR2[6] = 1 and MR2[7] = 1. The device will manage self refresh entry
over the supported temperature range of the DRAM. In this mode, the device will
change its self refresh rate as the DRAM operating temperature changes, going lower at
low temperatures and higher at high temperatures.
Manual Self Refresh Mode
If auto self refresh mode is not enabled, the low-power auto self refresh mode register
must be manually programmed to one of the three self refresh operating modes. This
mode provides the flexibility to select a fixed self refresh operating mode at the entry of
the self refresh, according to the system memory temperature conditions. The user is
responsible for maintaining the required memory temperature condition for the mode
selected during the SELF REFRESH operation. The user may change the selected mode
after exiting self refresh and before entering the next self refresh. If the temperature
condition is exceeded for the mode selected, there is a risk to data retention resulting in
loss of data.
Table 27: Auto Self Refresh Mode
MR2[7] MR2[6]
Low-Power
Auto Self Refresh
Mode
SELF REFRESH Operation
Operating Temperature
Range for Self Refresh Mode
(DRAM TCASE)
Variable or fixed normal self refresh rate
maintains data retention at the normal operating temperature. User is required to ensure
that 85°C DRAM TCASE (MAX) is not exceeded
to avoid any risk of data loss.
–40°C to 85°C
Extended
temperature
Variable or fixed high self refresh rate optimizes data retention to support the extended temperature range.
–40°C to 125°C
1
Reduced
temperature
Variable or fixed self refresh rate or any other DRAM power consumption reduction control for the reduced temperature range. User
is required to ensure 45°C DRAM TCASE
(MAX) is not exceeded to avoid any risk of
data loss.
–40°C to 45°C
1
Auto self refresh
Auto self refresh mode enabled. Self refresh
power consumption and data retention are
optimized for any given operating temperature condition.
All of the above
0
0
Normal
1
0
0
1
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8Gb: x8, x16 Automotive DDR4 SDRAM
Low-Power Auto Self Refresh Mode
Figure 33: Auto Self Refresh Ranges
IDD6
2x refresh rate
1x refresh rate
Extended
temperature
range
1/2x refresh rate
Reduced
temperature
range
-40°C
CCMTD-1406124318-10419
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Normal
temperature
range
85°C
45°C
88
105°C
Tc
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
Multipurpose Register
The MULTIPURPOSE REGISTER (MPR) function, MPR access mode, is used to write/
read specialized data to/from the DRAM. The MPR consists of four logical pages, MPR
Page 0 through MPR Page 3, with each page having four 8-bit registers, MPR0 through
MPR3. Page 0 can be read by any of three readout modes (serial, parallel, or staggered)
while Pages 1, 2, and 3 can be read by only the serial readout mode. Page 3 is for DRAM
vendor use only. MPR mode enable and page selection is done with MRS commands.
Data bus inversion (DBI) is not allowed during MPR READ operation.
Once the MPR access mode is enabled (MR3[2] = 1), only the following commands are
allowed: MRS, RD, RDA WR, WRA, DES, REF, and RESET; RDA/WRA have the same functionality as RD/WR which means the auto precharge part of RDA/WRA is ignored. Power-down mode and SELF REFRESH command are not allowed during MPR enable
mode. No other command can be issued within tRFC after a REF command has been
issued; 1x refresh (only) is to be used during MPR access mode. While in MPR access
mode, MPR read or write sequences must be completed prior to a REFRESH command.
Figure 34: MPR Block Diagram
Memory core
(all banks precharged)
Four multipurpose registers (pages),
each with four 8-bit registers:
MR3 [2] = 1
Data patterns (RD/WR)
Error log (RD)
Mode registers (RD)
DRAM manufacture only (RD)
flow
data
PR
M
DQ,s DM_n/DBI_n, DQS_t, DQS_c
Table 28: MR3 Setting for the MPR Access Mode
Address
Operation Mode
A[12:11]
MPR data read format
A2
MPR access
A[1:0]
MPR page selection
Description
00 = Serial ........... 01 = Parallel
10 = Staggered .... 11 = Reserved
0 = Standard operation (MPR not enabled)
1 = MPR data flow enabled
00 = Page 0 .... 01 = Page 1
10 = Page 2 .... 11 = Page 3
Table 29: DRAM Address to MPR UI Translation
MPR Location
[7]
[6]
[5]
[4]
[3]
[2]
[1]
[0]
DRAM address – Ax
A7
A6
A5
A4
A3
A2
A1
A0
MPR UI – UIx
UI0
UI1
UI2
UI3
UI4
UI5
UI6
UI7
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
Table 30: MPR Page and MPRx Definitions
Address
MPR Location
[7]
[6]
[5]
[4]
[3]
[2]
[1]
[0]
Note
Read/
Write
(default
value listed)
MPR Page 0 – Read or Write (Data Patterns)
BA[1:0]
00 = MPR0
0
1
0
1
0
1
0
1
01 = MPR1
0
0
1
1
0
0
1
1
10 = MPR2
0
0
0
0
1
1
1
1
11 = MPR3
0
0
0
0
0
0
0
0
MPR Page 1 – Read-only (Error Log)
BA[1:0]
00 = MPR0
01 = MPR1
A7
A6
CAS_n/A WE_n/A1
15
4
10 = MPR2
PAR
ACT_n
11 = MPR3
CRC error status
CA parity error
status
A5
A4
A3
A2
A1
A0
A13
A12
A11
A10
A9
A8
BG1
BG0
BA1
BA0
A17
RAS_n/A
16
C2
C1
C0
CA parity latency: [5] =
MR5[2], [4] = MR5[1], [3] =
MR5[0]
Read-only
MPR Page 2 – Read-only (MRS Readout)
BA[1:0]
00 = MPR0
hPPR
support
01 = MPR1
VREFDQ
trainging
range
MR6[6]
10 = MPR2
11 = MPR3
sPPR
support
RTT(WR)
MR2[11]
Temperature sensor status2
CRC write
enable
MR2[12]
RTT(WR) MR2[10:9]
VREFDQ training value: [6:1] = MR6[5:0]
CAS latency: [7:3] = MR0[6:4,2,12]
RTT(NOM): [7:5] = MR1[10:8]
Read-only
Geardown
enable
MR3[3]
CAS write latency [2:0] =
MR2[5:3]
RTT(Park): [4:2] = MR5[8:6]
RON: [1:0] =
MR1[2:1]
MPR Page 3 – Read-only (Restricted, except for MPR3 [3:0])
BA[1:0]
00 = MPR0
DC
DC
DC
DC
DC
DC
DC
DC
01 = MPR1
DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
10 = MPR2
DC
DC
11 = MPR3
MBISTPPR Support
DC
Notes:
MBIST-PPR Transparency
DC
DC
DC
DC
MAC
MAC
MAC
MAC
Read-only
1. DC = "Don't Care"
2. MPR[4:3] 00 = Sub 1X refresh; MPR[4:3] 01 = 1X refresh; MPR[4:3] 10 = 2X refresh;
MPR[4:3] 11 = Reserved
MPR Reads
MPR reads are supported using BL8 and BC4 modes. Burst length on-the-fly is not supported for MPR reads. Data bus inversion (DBI) is not allowed during MPR READ opera-
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
tion; the device will ignore the Read DBI enable setting in MR5 [12] when in MPR mode.
READ commands for BC4 are supported with a starting column address of A[2:0] = 000
or 100. After power-up, the content of MPR Page 0 has the default values, which are defined in Table 30. MPR page 0 can be rewritten via an MPR WRITE command. The device maintains the default values unless it is rewritten by the DRAM controller. If the
DRAM controller does overwrite the default values (Page 0 only), the device will maintain the new values unless re-initialized or there is power loss.
Timing in MPR mode:
• Reads (back-to-back) from Page 0 may use tCCD_S or tCCD_L timing between READ
commands
• Reads (back-to-back) from Pages 1, 2, or 3 may not use tCCD_S timing between READ
commands; tCCD_L must be used for timing between READ commands
The following steps are required to use the MPR to read out the contents of a mode register (MPR Page x, MPRy).
1. The DLL must be locked if enabled.
2. Precharge all; wait until tRP is satisfied.
3. MRS command to MR3[2] = 1 (Enable MPR data flow), MR3[12:11] = MPR read format, and MR3[1:0] MPR page.
a. MR3[12:11] MPR read format:
1. 00 = Serial read format
2. 01 = Parallel read format
3. 10 = staggered read format
4. 11 = RFU
b. MR3[1:0] MPR page:
1. 00 = MPR Page 0
2. 01 = MPR Page 1
3. 10 = MPR Page 2
4. 11 = MPR Page 3
4. tMRD and tMOD must be satisfied.
5. Redirect all subsequent READ commands to specific MPRx location.
6. Issue RD or RDA command.
a. BA1 and BA0 indicate MPRx location:
1. 00 = MPR0
2. 01 = MPR1
3. 10 = MPR2
4. 11 = MPR3
b. A12/BC = 0 or 1; BL8 or BC4 fixed-only, BC4 OTF not supported.
1. If BL = 8 and MR0 A[1:0] = 01, A12/BC must be set to 1 during MPR
READ commands.
c. A2 = burst-type dependant:
1. BL8: A2 = 0 with burst order fixed at 0, 1, 2, 3, 4, 5, 6, 7
2. BL8: A2 = 1 not allowed
3. BC4: A2 = 0 with burst order fixed at 0, 1, 2, 3, T, T, T, T
4. BC4: A2 = 1 with burst order fixed at 4, 5, 6, 7, T, T, T, T
d. A[1:0] = 00, data burst is fixed nibble start at 00.
e. Remaining address inputs, including A10, and BG1 and BG0 are "Don’t
Care."
7. After RL = AL + CL, DRAM bursts data from MPRx location; MPR readout format
determined by MR3[A12,11,1,0].
8. Steps 5 through 7 may be repeated to read additional MPRx locations.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
9. After the last MPRx READ burst, tMPRR must be satisfied prior to exiting.
10. Issue MRS command to exit MPR mode; MR3[2] = 0.
11. After the tMOD sequence is completed, the DRAM is ready for normal operation
from the core (such as ACT).
MPR Readout Format
The MPR read data format can be set to three different settings: serial, parallel, and
staggered.
MPR Readout Serial Format
The serial format is required when enabling the MPR function to read out the contents
of an MRx, temperature sensor status, and the command address parity error frame.
However, data bus calibration locations (four 8-bit registers) can be programmed to
read out any of the three formats. The DRAM is required to drive associated strobes
with the read data similar to normal operation (such as using MRS preamble settings).
Serial format implies that the same pattern is returned on all DQ lanes, as shown the
table below, which uses values programmed into the MPR via [7:0] as 0111 1111.
Table 31: MPR Readout Serial Format
Serial
UI0
UI1
UI2
UI3
UI4
UI5
UI6
UI7
DQ0
0
1
1
1
1
1
1
1
DQ1
0
1
1
1
1
1
1
1
DQ2
0
1
1
1
1
1
1
1
DQ3
0
1
1
1
1
1
1
1
DQ0
0
1
1
1
1
1
1
1
DQ1
0
1
1
1
1
1
1
1
DQ2
0
1
1
1
1
1
1
1
DQ3
0
1
1
1
1
1
1
1
DQ4
0
1
1
1
1
1
1
1
DQ5
0
1
1
1
1
1
1
1
DQ6
0
1
1
1
1
1
1
1
DQ7
0
1
1
1
1
1
1
1
DQ0
0
1
1
1
1
1
1
1
DQ1
0
1
1
1
1
1
1
1
DQ2
0
1
1
1
1
1
1
1
DQ3
0
1
1
1
1
1
1
1
DQ4
0
1
1
1
1
1
1
1
DQ5
0
1
1
1
1
1
1
1
DQ6
0
1
1
1
1
1
1
1
DQ7
0
1
1
1
1
1
1
1
x4 Device
x8 Device
x16 Device
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
Table 31: MPR Readout Serial Format (Continued)
Serial
UI0
UI1
UI2
UI3
UI4
UI5
UI6
UI7
DQ8
0
1
1
1
1
1
1
1
DQ9
0
1
1
1
1
1
1
1
DQ10
0
1
1
1
1
1
1
1
DQ11
0
1
1
1
1
1
1
1
DQ12
0
1
1
1
1
1
1
1
DQ13
0
1
1
1
1
1
1
1
DQ14
0
1
1
1
1
1
1
1
DQ15
0
1
1
1
1
1
1
1
MPR Readout Parallel Format
Parallel format implies that the MPR data is returned in the first data UI and then repeated in the remaining UIs of the burst, as shown in the table below. Data pattern location
0 is the only location used for the parallel format. RD/RDA from data pattern locations
1, 2, and 3 are not allowed with parallel data return mode. In this example, the pattern
programmed in the data pattern location 0 is 0111 1111. The x4 configuration only outputs the first four bits (0111 in this example). For the x16 configuration, the same pattern is repeated on both the upper and lower bytes.
Table 32: MPR Readout – Parallel Format
Parallel
UI0
UI1
UI2
UI3
UI4
UI5
UI6
UI7
DQ0
0
0
0
0
0
0
0
0
DQ1
1
1
1
1
1
1
1
1
DQ2
1
1
1
1
1
1
1
1
DQ3
1
1
1
1
1
1
1
1
DQ0
0
0
0
0
0
0
0
0
DQ1
1
1
1
1
1
1
1
1
DQ2
1
1
1
1
1
1
1
1
DQ3
1
1
1
1
1
1
1
1
DQ4
1
1
1
1
1
1
1
1
DQ5
1
1
1
1
1
1
1
1
DQ6
1
1
1
1
1
1
1
1
DQ7
1
1
1
1
1
1
1
1
DQ0
0
0
0
0
0
0
0
0
DQ1
1
1
1
1
1
1
1
1
DQ2
1
1
1
1
1
1
1
1
DQ3
1
1
1
1
1
1
1
1
x4 Device
x8 Device
x16 Device
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
Table 32: MPR Readout – Parallel Format (Continued)
Parallel
UI0
UI1
UI2
UI3
UI4
UI5
UI6
UI7
DQ4
1
1
1
1
1
1
1
1
DQ5
1
1
1
1
1
1
1
1
DQ6
1
1
1
1
1
1
1
1
DQ7
1
1
1
1
1
1
1
1
DQ8
0
0
0
0
0
0
0
0
DQ9
1
1
1
1
1
1
1
1
DQ10
1
1
1
1
1
1
1
1
DQ11
1
1
1
1
1
1
1
1
DQ12
1
1
1
1
1
1
1
1
DQ13
1
1
1
1
1
1
1
1
DQ14
1
1
1
1
1
1
1
1
DQ15
1
1
1
1
1
1
1
1
MPR Readout Staggered Format
Staggered format of data return is defined as the staggering of the MPR data across the
lanes. In this mode, an RD/RDA command is issued to a specific data pattern location
and then the data is returned on the DQ from each of the different data pattern locations. For the x4 configuration, an RD/RDA to data pattern location 0 will result in data
from location 0 being driven on DQ0, data from location 1 being driven on DQ1, data
from location 2 being driven on DQ2, and so on, as shown below. Similarly, an RD/RDA
command to data pattern location 1 will result in data from location 1 being driven on
DQ0, data from location 2 being driven on DQ1, data from location 3 being driven on
DQ2, and so on. Examples of different starting locations are also shown.
Table 33: MPR Readout Staggered Format, x4
x4 READ MPR0 Command
x4 READ MPR1 Command
x4 READ MPR2 Command x4 READ MPR3 Command
Stagger
UI[7:0]
Stagger
UI[7:0]
Stagger
UI[7:0]
Stagger
UI[7:0]
DQ0
MPR0
DQ0
MPR1
DQ0
MPR2
DQ0
MPR3
DQ1
MPR1
DQ1
MPR2
DQ1
MPR3
DQ1
MPR0
DQ2
MPR2
DQ2
MPR3
DQ2
MPR0
DQ2
MPR1
DQ3
MPR3
DQ3
MPR0
DQ3
MPR1
DQ3
MPR2
It is expected that the DRAM can respond to back-to-back RD/RDA commands to the
MPR for all DDR4 frequencies so that a sequence (such as the one that follows) can be
created on the data bus with no bubbles or clocks between read data. In this case, the
system memory controller issues a sequence of RD(MPR0), RD(MPR1), RD(MPR2),
RD(MPR3), RD(MPR0), RD(MPR1), RD(MPR2), and RD(MPR3).
Table 34: MPR Readout Staggered Format, x4 – Consecutive READs
Stagger
UI[7:0]
UI[15:8]
UI[23:16]
UI[31:24]
UI[39:32]
UI[47:40]
UI[55:48]
UI[63:56]
DQ0
MPR0
MPR1
MPR2
MPR3
MPR0
MPR1
MPR2
MPR3
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
Table 34: MPR Readout Staggered Format, x4 – Consecutive READs (Continued)
Stagger
UI[7:0]
UI[15:8]
UI[23:16]
UI[31:24]
UI[39:32]
UI[47:40]
UI[55:48]
UI[63:56]
DQ1
MPR1
MPR2
MPR3
MPR0
MPR1
MPR2
MPR3
MPR0
DQ2
MPR2
MPR3
MPR0
MPR1
MPR2
MPR3
MPR0
MPR1
DQ3
MPR3
MPR0
MPR1
MPR2
MPR3
MPR0
MPR1
MPR2
For the x8 configuration, the same pattern is repeated on the lower nibble as on the upper nibble. READs to other MPR data pattern locations follow the same format as the x4
case. A read example to MPR0 for x8 and x16 configurations is shown below.
Table 35: MPR Readout Staggered Format, x8 and x16
x8 READ MPR0 Command
x16 READ MPR0 Command
x16 READ MPR0 Command
Stagger
UI[7:0]
Stagger
UI[7:0]
Stagger
UI[7:0]
DQ0
MPR0
DQ0
MPR0
DQ8
MPR0
DQ1
MPR1
DQ1
MPR1
DQ9
MPR1
DQ2
MPR2
DQ2
MPR2
DQ10
MPR2
DQ3
MPR3
DQ3
MPR3
DQ11
MPR3
DQ4
MPR0
DQ4
MPR0
DQ12
MPR0
DQ5
MPR1
DQ5
MPR1
DQ13
MPR1
DQ6
MPR2
DQ6
MPR2
DQ14
MPR2
DQ7
MPR3
DQ7
MPR3
DQ15
MPR3
MPR READ Waveforms
The following waveforms show MPR read accesses.
Figure 35: MPR READ Timing
T0
Ta0
Ta1
Tb0
Tc0
Tc1
Tc2
Tc3
Td0
Td1
DES
READ
DES
DES
DES
DES
DES
DES
Te0
Tf0
Tf1
Valid 4
DES
Valid
Valid
CK_c
CK_t
MPE Enable
Command
tRP
Address
Valid
MPE Disable
MRS1
PREA
tMOD
Valid
MRS3
tMPRR
Valid
Add2
Valid
Valid
Valid
Valid
Valid
Valid
tMOD
Valid
CKE
PL5 + AL + CL
DQS_t,
DQS_c
DQ
UI0
UI1
UI2
UI5
UI6
UI7
Time Break
Notes:
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Don’t Care
1. tCCD_S = 4tCK, Read Preamble = 1tCK.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
2. Address setting:
A[1:0] = 00b (data burst order is fixed starting at nibble, always 00b here)
A2 = 0b (for BL = 8, burst order is fixed at 0, 1, 2, 3, 4, 5, 6, 7)
BA1 and BA0 indicate the MPR location
A10 and other address pins are "Don’t Care," including BG1 and BG0. A12 is "Don’t
Care" when MR0 A[1:0] = 00 or 10 and must be 1b when MR0 A[1:0] = 01
3. Multipurpose registers read/write disable (MR3 A2 = 0).
4. Continue with regular DRAM command.
5. Parity latency (PL) is added to data output delay when CA parity latency mode is enabled.
Figure 36: MPR Back-to-Back READ Timing
T0
T1
T2
DES
READ
DES
T3
T4
T5
T6
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Ta8
Ta9
Ta10
DES
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
CK_c
CK_t
Command
tCCD_S1
Address
Valid
Add2
Valid
Add2
CKE
PL3 + AL + CL
DQS_t,
DQS_c
DQ
UI0
UI1
UI2
UI3
UI0
UI1
UI2
UI3
UI4
UI5
UI6
UI7
UI0
UI1
UI2
UI3
UI0
UI1
UI2
UI3
UI4
UI5
UI6
UI7
DQS_t,
DQS_c
DQ
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Don’t Care
1. tCCD_S = 4tCK, Read Preamble = 1tCK.
2. Address setting:
A[1:0] = 00b (data burst order is fixed starting at nibble, always 00b here)
A2 = 0b (for BL = 8, burst order is fixed at 0, 1, 2, 3, 4, 5, 6, 7; for BC = 4, burst order is
fixed at 0, 1, 2, 3, T, T, T, T)
BA1 and BA0 indicate the MPR location
A10 and other address pins are "Don’t Care," including BG1 and BG0. A12 is "Don’t
Care" when MR0 A[1:0] = 00 or 10 and must be 1b when MR0 A[1:0] = 01
3. Parity latency (PL) is added to data output delay when CA parity latency mode is enabled.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
Figure 37: MPR READ-to-WRITE Timing
T0
T1
T2
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
Tb0
Tb1
Tb2
WRITE
DES
DES
Add2
Valid
Valid
CK_c
CK_t
Command
tMPRR
Address
Add1
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
CKE
PL3 + AL + CL
DQS_t,
DQS_c
DQ
UI0
UI1
UI2
UI3
UI4
UI5
UI6
UI7
Time Break
Notes:
Don’t Care
1. Address setting:
A[1:0] = 00b (data burst order is fixed starting at nibble, always 00b here)
A2 = 0b (for BL = 8, burst order is fixed at 0, 1, 2, 3, 4, 5, 6, 7)
BA1 and BA0 indicate the MPR location
A10 and other address pins are "Don’t Care," including BG1 and BG0. A12 is "Don’t
Care" when MR0 A[1:0] = 00 and must be 1b when MR0 A[1:0] = 01
2. Address setting:
BA1 and BA0 indicate the MPR location
A[7:0] = data for MPR
BA1 and BA0 indicate the MPR location
A10 and other address pins are "Don’t Care"
3. Parity latency (PL) is added to data output delay when CA parity latency mode is enabled.
MPR Writes
MPR access mode allows 8-bit writes to the MPR Page 0 using the address bus A[7:0].
Data bus inversion (DBI) is not allowed during MPR WRITE operation. The DRAM will
maintain the new written values unless re-initialized or there is power loss.
The following steps are required to use the MPR to write to mode register MPR Page 0.
1. The DLL must be locked if enabled.
2. Precharge all; wait until tRP is satisfied.
3. MRS command to MR3[2] = 1 (enable MPR data flow) and MR3[1:0] = 00 (MPR
Page 0); writes to 01, 10, and 11 are not allowed.
4. tMRD and tMOD must be satisfied.
5. Redirect all subsequent WRITE commands to specific MPRx location.
6. Issue WR or WRA command:
a. BA1 and BA0 indicate MPRx location
1. 00 = MPR0
2. 01 = MPR1
3. 10 = MPR2
4. 11 = MPR3
b. A[7:0] = data for MPR Page 0, mapped A[7:0] to UI[7:0].
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
7.
8.
9.
10.
11.
c. Remaining address inputs, including A10, and BG1 and BG0 are "Don’t
Care."
tWR_MPR must be satisfied to complete MPR WRITE.
Steps 5 through 7 may be repeated to write additional MPRx locations.
After the last MPRx WRITE, tMPRR must be satisfied prior to exiting.
Issue MRS command to exit MPR mode; MR3[2] = 0.
When the tMOD sequence is completed, the DRAM is ready for normal operation
from the core (such as ACT).
MPR WRITE Waveforms
The following waveforms show MPR write accesses.
Figure 38: MPR WRITE and WRITE-to-READ Timing
T0
Ta0
Ta1
Tb0
Tc0
Tc1
Tc2
Td0
Td1
Td2
Td3
Td4
Td5
DES
WRITE
DES
DES
READ
DES
DES
DES
DES
DES
DES
Valid
Add
Valid
Valid
Valid
Add2
Valid
Valid
CK_c
CK_t
MPR Enable
Command
MRS1
PREA
tRP
Address
Valid
tMOD
Valid
tWR_MPR
Valid
Add2
Valid
CKE
PL3 + AL + CL
DQS_t,
DQS_c
DQ
UI0
UI1
UI2
UI3
UI4
UI5
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
UI6
UI7
Don’t Care
1. Multipurpose registers read/write enable (MR3 A2 = 1).
2. Address setting:
BA1 and BA0 indicate the MPR location
A10 and other address pins are "Don’t Care"
3. Parity latency (PL) is added to data output delay when CA parity latency mode is enabled.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
Figure 39: MPR Back-to-Back WRITE Timing
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Ta8
Ta9
Ta10
WRITE
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
Valid
Valid
Add
Valid
Valid
Valid
Valid
Valid
Valid
CK_c
CK_t
Command
tWR_MPR
Address
Add1
Valid
Valid
Add1
CKE
DQS_t,
DQS_c
DQ
Time Break
Note:
Don’t Care
1. Address setting:
BA1 and BA0 indicate the MPR location
A[7:0] = data for MPR
A10 and other address pins are "Don’t Care"
MPR REFRESH Waveforms
The following waveforms show MPR accesses interaction with refreshes.
Figure 40: REFRESH Timing
T0
Ta0
Ta1
Tb0
Tb1
Tb2
Tb3
DES
REF2
DES
DES
DES
Tb4
Tc0
Tc1
Tc2
Tc3
Tc4
DES
DES
DES
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
CK_c
CK_t
MPR Enable
Command
MRS1
PREA
tRP
Address
Valid
tMOD
Valid
tRFC
Valid
Valid
Valid
Valid
Valid
Time Break
Notes:
CCMTD-1406124318-10419
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Don’t Care
1. Multipurpose registers read/write enable (MR3 A2 = 1). Redirect all subsequent read and
writes to MPR locations.
2. 1x refresh is only allowed when MPR mode is enabled.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
Figure 41: READ-to-REFRESH Timing
T0
T1
T2
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Ta8
Ta9
Command
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
REF2
DES
DES
Address
Add1
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
CK_c
CK_t
CKE
PL + AL + CL
tRFC
(4 + 1) Clocks
BL = 8
DQS_t, DQS_c
DQ
UI0
UI1
UI2
UI3
UI0
UI1
UI2
UI3
UI4
UI5
UI6
UI7
BC = 4
DQS_t, DQS_c
DQ
Time Break
Notes:
Don’t Care
1. Address setting:
A[1:0] = 00b (data burst order is fixed starting at nibble, always 00b here)
A2 = 0b (for BL = 8, burst order is fixed at 0, 1, 2, 3, 4, 5, 6, 7)
BA1 and BA0 indicate the MPR location
A10 and other address pins are "Don’t Care," including BG1 and BG0. A12 is "Don’t
Care" when MR0 A[1:0] = 00 or 10, and must be 1b when MR0 A[1:0] = 01
2. 1x refresh is only allowed when MPR mode is enabled.
Figure 42: WRITE-to-REFRESH Timing
T0
T1
WRITE
DES
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
DES
DES
REF2
DES
DES
DES
Ta6
Ta7
Ta8
Ta9
Ta10
DES
DES
DES
DES
DES
Valid
Valid
Valid
Valid
Valid
CK_c
CK_t
Command
tWR_MPR
Address
Add1
Valid
Valid
tRFC
Valid
Valid
Valid
Valid
Valid
CKE
DQS_t,
DQS_c
DQ
Time Break
Notes:
CCMTD-1406124318-10419
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Don’t Care
1. Address setting:
BA1 and BA0 indicate the MPR location
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8Gb: x8, x16 Automotive DDR4 SDRAM
Multipurpose Register
A[7:0] = data for MPR
A10 and other address pins are "Don’t Care"
2. 1x refresh is only allowed when MPR mode is enabled.
CCMTD-1406124318-10419
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8Gb: x8, x16 Automotive DDR4 SDRAM
Gear-Down Mode
Gear-Down Mode
The DDR4 SDRAM defaults in 1/2 rate (1N) clock mode and uses a low-frequency MRS
command (the MRS command has relaxed setup and hold) followed by a sync pulse
(first CS pulse after MRS setting) to align the proper clock edge for operating the control
lines CS_n, CKE, and ODT when in 1/4 rate (2N) mode. Gear-down mode is only supported at DDR4-2666 and faster. For operation in 1/2 rate mode, neither an MRS command or a sync pulse is required. Gear-down mode may only be entered during initialization or self refresh exit and may only be exited during self refresh exit. CAL mode and
CA parity mode must be disabled prior to gear-down mode entry. The two modes may
be enabled after tSYNC_GEAR and tCMD_GEAR periods have been satisfied. The general sequence for operation in 1/4 rate during initialization is as follows:
1. The device defaults to a 1N mode internal clock at power-up/reset.
2. Assertion of reset.
3. Assertion of CKE enables the DRAM.
4. MRS is accessed with a low-frequency N × tCK gear-down MRS command. (NtCK
static MRS command is qualified by 1N CS_n. )
5. The memory controller will send a 1N sync pulse with a low-frequency N × tCK
NOP command. tSYNC_GEAR is an even number of clocks. The sync pulse is on an
even edge clock boundary from the MRS command.
6. Initialization sequence, including the expiration of tDLLK and tZQinit, starts in 2N
mode after tCMD_GEAR from 1N sync pulse.
The device resets to 1N gear-down mode after entering self refresh. The general sequence for operation in gear-down after self refresh exit is as follows:
1. MRS is set to 1, via MR3[3], with a low-frequency N × tCK gear-down MRS command.
a. The NtCK static MRS command is qualified by 1N CS_n, which meets tXS or
tXS_ABORT.
b. Only a REFRESH command may be issued to the DRAM before the NtCK static MRS command.
2. The DRAM controller sends a 1N sync pulse with a low-frequency N × tCK NOP
command.
a. tSYNC_GEAR is an even number of clocks.
b. The sync pulse is on even edge clock boundary from the MRS command.
3. A valid command not requiring locked DLL is available in 2N mode after
tCMD_GEAR from the 1N sync pulse.
a. A valid command requiring locked DLL is available in 2N mode after tXSDLL
or tDLLK from the 1N sync pulse.
4. If operation is in 1N mode after self refresh exit, N × tCK MRS command or sync
pulse is not required during self refresh exit. The minimum exit delay to the first
valid command is tXS, or tXS_ABORT.
The DRAM may be changed from 2N to 1N by entering self refresh mode, which will reset to 1N mode. Changing from 2N to by any other means can result in loss of data and
make operation of the DRAM uncertain.
When operating in 2N gear-down mode, the following MR settings apply:
•
•
•
•
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CAS latency (MR0[6:4,2]): Even number of clocks
Write recovery and read to precharge (MR0[11:9]): Even number of clocks
Additive latency (MR1[4:3]): CL - 2
CAS WRITE latency (MR2 A[5:3]): Even number of clocks
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8Gb: x8, x16 Automotive DDR4 SDRAM
Gear-Down Mode
• CS to command/address latency mode (MR4[8:6]): Even number of clocks
• CA parity latency mode (MR5[2:0]): Even number of clocks
Figure 43: Clock Mode Change from 1/2 Rate to 1/4 Rate (Initialization)
TdkN + Neven2
TdkN1
CK_c
CK_t
tCKSRX
DRAM
internal CLK
RESET_n
CKE
tXPR_GEAR
tCMD_GEAR
tSYNC_GEAR
1N sync pulse
2N mode
CS_n
tGEAR_setup
Command
tGEAR_hold
tGEAR_setup
MRS
tGEAR_hold
NOP
Valid
Configure DRAM
to 1/4 rate
Time Break
Don’t Care
1. After tSYNC_GEAR from GEAR-DOWN command, internal clock rate is changed at TdkN.
2. After tSYNC_GEAR + tCMD_GEAR from GEAR-DOWN command, both internal clock rate
and command cycle are changed at TdkN + Neven.
Notes:
Figure 44: Clock Mode Change After Exiting Self Refresh
TdkN + Neven2
TdkN1
CK_c
CK_t
DRAM
internal CLK
CKE
tCMD_GEAR
tSYNC_GEAR
tXPR_GEAR
1N sync pulse
2N mode
CS_n
tGEAR_setup
Command
tGEAR_hold
MRS
Configure DRAM
to 1/4 rate
Notes:
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tGEAR_setup
tGEAR_hold
NOP
Valid
Time Break
Don’t Care
1. After tSYNC_GEAR from GEAR-DOWN command, internal clock rate is changed at TdkN.
2. After tSYNC_GEAR + tCMD_GEAR from GEAR-DOWN command, both internal clock rate
and command cycle are changed at TdkN + Neven.
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Figure 45: Comparison Between Gear-Down Disable and Gear-Down Enable
T0
T1
T2
T3
T15
T16
T17
T18
T19
T30
T31
T32
T33
T34
T35
T36
T37
T38
DES
DES
DES
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
AL = 0 (geardown = disable)
Command
ACT
DO
n
DQ
tRCD
= 16
AL = CL - 1 (geardown = disable)
Command
ACT
READ
DO
n+ 1
DO
n+ 2
DO
n+ 3
DO
n+ 4
DO
n+ 5
DO
n+ 6
DO
n+ 7
RL =CL= 16 (AL = 0)
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DO
n
DQ
DES
DO
n+ 1
DO
n+ 2
DES
DO
n+ 3
DO
n+ 4
DES
DO
n+ 5
DO
n+ 6
DES
DO
n+ 7
RL = AL + CL = 31 (AL = CL - 1 = 15)
READ
Command
ACT
READ
DES
DES
DES
DES
DO
n
DQ
DES
DO
n+ 1
DO
n+ 2
DO
n+ 3
DO
n+ 4
DES
DO
n+ 5
DO
n+ 6
DES
DO
n+ 7
AL + CL = RL = 30 (AL = CL - 2 = 14)
104
Time Break
Transitioning Data
Don’t Care
8Gb: x8, x16 Automotive DDR4 SDRAM
Gear-Down Mode
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8Gb: x8, x16 Automotive DDR4 SDRAM
Maximum Power-Saving Mode
Maximum Power-Saving Mode
Maximum power-saving mode provides the lowest power mode where data retention is
not required. When the device is in the maximum power-saving mode, it does not
maintain data retention or respond to any external command, except the MAXIMUM
POWER SAVING MODE EXIT command and during the assertion of RESET_n signal
LOW. This mode is more like a “hibernate mode” than a typical power-saving mode.
The intent is to be able to park the DRAM at a very low-power state; the device can be
switched to an active state via the per-DRAM addressability (PDA) mode.
Maximum Power-Saving Mode Entry
Maximum power-saving mode is entered through an MRS command. For devices with
shared control/address signals, a single DRAM device can be entered into the maximum power-saving mode using the per-DRAM addressability MRS command. Large
CS_n hold time to CKE upon the mode exit could cause DRAM malfunction; as a result,
CA parity, CAL, and gear-down modes must be disabled prior to the maximum powersaving mode entry MRS command.
The MRS command may use both address and DQ information, as defined in the PerDRAM Addressability section. As illustrated in the figure below, after tMPED from the
mode entry MRS command, the DRAM is not responsive to any input signals except
CKE, CS_n, and RESET_n. All other inputs are disabled (external input signals may become High-Z). The system will provide a valid clock until tCKMPE expires, at which time
clock inputs (CK) should be disabled (external clock signals may become High-Z).
Figure 46: Maximum Power-Saving Mode Entry
Ta0
Ta1
Ta2
Tb0
Tb1
Tb3
Tc0
Tc1
Tc2
Tc3
Tc4
Tc5
Tc6
Tc7
Tc8
Tc9
Tc10
Tc11
CK_c
CK_t
tCKMPE
MR4[A1=1]
MPSM Enable)
Command
DES
MRS
DES
DES
DES
tMPED
Address
Valid
CS_n
CKE
CKE LOW makes CS_n a care; CKE LOW followed by CS_n LOW followed by CKE HIGH exits mode
RESET_n
Time Break
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8Gb: x8, x16 Automotive DDR4 SDRAM
Maximum Power-Saving Mode
Maximum Power-Saving Mode Entry in PDA
The sequence and timing required for the maximum power-saving mode with the perDRAM addressability enabled is illustrated in the figure below.
Figure 47: Maximum Power-Saving Mode Entry with PDA
Ta0
Ta1
Ta2
Tb0
Tb1
Tb3
Tb4
Tb5
Tb6
Tb7
Tb8
Tb9
Tc0
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
Tc1
Tc2
Td0
Td1
Td2
CK_c
CK_t
MR4[A1 = 1]
MPSM Enable)
Command
DES
MRS
DES
tCKMPE
CS_n
CKE
tMPED
AL + CWL
DQS_t
DQS_c
tPDA_S
tPDA_H
DQ0
RESET_n
Time Break
Don’t Care
CKE Transition During Maximum Power-Saving Mode
The following figure shows how to maintain maximum power-saving mode even though
the CKE input may toggle. To prevent the device from exiting the mode, CS_n should be
HIGH at the CKE LOW-to-HIGH edge, with appropriate setup (tMPX_S) and hold
(tMPX_H) timings.
Figure 48: Maintaining Maximum Power-Saving Mode with CKE Transition
CLK
CMD
CS_n
tMPX_S
tMPX_HH
CKE
RESET_n
Don’t Care
Maximum Power-Saving Mode Exit
To exit the maximum power-saving mode, CS_n should be LOW at the CKE LOW-toHIGH transition, with appropriate setup (tMPX_S) and hold (tMPX_LH) timings, as
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8Gb: x8, x16 Automotive DDR4 SDRAM
Maximum Power-Saving Mode
shown in the figure below. Because the clock receivers (CK_t, CK_c) are disabled during
this mode, CS_n = LOW is captured by the rising edge of the CKE signal. If the CS_n signal level is detected LOW, the DRAM clears the maximum power-saving mode MRS bit
and begins the exit procedure from this mode. The external clock must be restarted and
be stable by tCKMPX before the device can exit the maximum power-saving mode. During the exit time (tXMP), only NOP and DES commands are allowed: NOP during
tMPX_LH and DES the remainder of tXMP. After tXMP expires, valid commands not requiring a locked DLL are allowed; after tXMP_DLL expires, valid commands requiring a
locked DLL are allowed.
Figure 49: Maximum Power-Saving Mode Exit
Ta0
Ta1
Ta2
Ta3
Tb1
Tb0
Tb2
Tb3
Tc0
NOP
NOP
NOP
Tc1
Tc2
Tc4
Td0
Td1
Td2
Td3
Te0
Te1
NOP
NOP
DES
DES
DES
DES
Valid
DES
DES
CK_c
CK_t
tCKMPX
Command
tMPX_LH
CS_n
tMPX_S
CKE
tXMP
tXMP_DLL
RESET_n
Time Break
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8Gb: x8, x16 Automotive DDR4 SDRAM
Command/Address Parity
Command/Address Parity
Command/address (CA) parity takes the CA parity signal (PAR) input carrying the parity
bit for the generated address and commands signals and matches it to the internally
generated parity from the captured address and commands signals. CA parity is supported in the DLL enabled state only; if the DLL is disabled, CA parity is not supported.
Figure 50: Command/Address Parity Operation
DRAM Controller
DRAM
CMD/ADDR
Even parity
GEN
CMD/ADDR
Even parity
GEN
CMD/ADDR
Even parity bit
Even parity bit
Compare
parity
bit
CA parity is disabled or enabled via an MRS command. If CA parity is enabled by programming a non-zero value to CA parity latency in the MR, the DRAM will ensure that
there is no parity error before executing commands. There is an additional delay required for executing the commands versus when parity is disabled. The delay is programmed in the MR when CA parity is enabled (parity latency) and applied to all commands which are registered by CS_n (rising edge of CK_t and falling CS_n). The command is held for the time of the parity latency (PL) before it is executed inside the device. The command captured by the input clock has an internal delay before executing
and is determined with PL. ALERT_n will go active when the DRAM detects a CA parity
error.
CA parity covers ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, the address bus including
bank address and bank group bits, and C[2:0] on 3DS devices; the control signals CKE,
ODT, and CS_n are not covered. For example, for a 4Gb x4 monolithic device, parity is
computed across BG[1:0], BA[1:0], A16/RAS_n, A15/CAS_n, A14/ WE_n, A[13:0], and
ACT_n. The DRAM treats any unused address pins internally as zeros; for example, if a
common die has stacked pins but the device is used in a monolithic application, then
the address pins used for stacking and not connected are treated internally as zeros.
The convention for parity is even parity; for example, valid parity is defined as an even
number of ones across the inputs used for parity computation combined with the parity signal. In other words, the parity bit is chosen so that the total number of ones in the
transmitted signal, including the parity bit, is even.
If a DRAM device detects a CA parity error in any command qualified by CS_n, it will
perform the following steps:
1. Ignore the erroneous command. Commands in the MAX NnCK window
(tPAR_UNKNOWN) prior to the erroneous command are not guaranteed to be executed. When a READ command in this NnCK window is not executed, the device
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8Gb: x8, x16 Automotive DDR4 SDRAM
Command/Address Parity
2.
3.
4.
5.
6.
7.
8.
does not activate DQS outputs. If WRITE CRC is enabled and a WRITE CRC occurs
during the tPAR_UNKNOWN window, the WRITE CRC Error Status Bit located at
MR5[3] may or may not get set. When CA Parity and WRITE CRC are both enabled
and a CA Parity occurs, the WRITE CRC Error Status Bit should be reset.
Log the error by storing the erroneous command and address bits in the MPR error log.
Set the parity error status bit in the mode register to 1. The parity error status bit
must be set before the ALERT_n signal is released by the DRAM (that is,
tPAR_ALERT_ON + tPAR_ALERT_PW (MIN)).
Assert the ALERT_n signal to the host (ALERT_n is active LOW) within
tPAR_ALERT_ON time.
Wait for all in-progress commands to complete. These commands were received
tPAR_UNKOWN before the erroneous command.
Wait for tRAS (MIN) before closing all the open pages. The DRAM is not executing
any commands during the window defined by (tPAR_ALERT_ON +
tPAR_ALERT_PW).
After tPAR_ALERT_PW (MIN) has been satisfied, the device may de-assert
ALERT_n.
a. When the device is returned to a known precharged state, ALERT_n is allowed to be de-asserted.
After (tPAR_ALERT_PW (MAX)) the DRAM is ready to accept commands for normal operation. Parity latency will be in effect; however, parity checking will not resume until the memory controller has cleared the parity error status bit by writing
a zero. The DRAM will execute any erroneous commands until the bit is cleared;
unless persistent mode is enabled.
• It is possible that the device might have ignored a REFRESH command during
tPAR_ALERT_PW or the REFRESH command is the first erroneous frame, so it is recommended that extra REFRESH cycles be issued, as needed.
• The parity error status bit may be read anytime after tPAR_ALERT_ON +
tPAR_ALERT_PW to determine which DRAM had the error. The device maintains the
error log for the first erroneous command until the parity error status bit is reset to a
zero or a second CA parity occurs prior to resetting.
The mode register for the CA parity error is defined as follows: CA parity latency bits are
write only, the parity error status bit is read/write, and error logs are read-only bits. The
DRAM controller can only program the parity error status bit to zero. If the DRAM controller illegally attempts to write a 1 to the parity error status bit, the DRAM can not be
certain that parity will be checked; the DRAM may opt to block the DRAM controller
from writing a 1 to the parity error status bit.
The device supports persistent parity error mode. This mode is enabled by setting
MR5[9] = 1; when enabled, CA parity resumes checking after the ALERT_n is de-asserted, even if the parity error status bit remains a 1. If multiple errors occur before the error status bit is cleared the error log in MPR Page 1 should be treated as "Don’t Care." In
persistent parity error mode the ALERT_n pulse will be asserted and de-asserted by the
DRAM as defined with the MIN and MAX value tPAR_ALERT_PW. The DRAM controller
must issue DESELECT commands once it detects the ALERT_n signal, this response
time is defined as tPAR_ALERT_RSP. The following figures capture the flow of events on
the CA bus and the ALERT_n signal.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Command/Address Parity
Table 36: Mode Register Setting for CA Parity
CA Parity Latency
MR5[2:0]1
Applicable Speed Bin
000 = Disabled
N/A
001 = 4 clocks
1600, 1866, 2133
010 = 5 clocks
2400, 2666
011 = 6 clocks
2933, 3200
100 = 8 clocks
RFU
101 = Reserved
RFU
110 = Reserved
RFU
111 = Reserved
RFU
Notes:
Erroneous CA
Frame
Parity Error Status Parity Persistent Mode
MR5 [4] 0 = Clear
MR5 [4] 1 = Error
C[2:0], ACT_n, BG1,
BG0, BA[1:0], PAR,
MR5 [9] 0 = DisabledMR5
A17, A16/RAS_n, A15/
[9] 1 = Enabled
CAS_n, A14/WE_n,
A[13:0]
1. Parity latency is applied to all commands.
2. Parity latency can be changed only from a CA parity disabled state; for example, a direct
change from PL = 3 to PL = 4 is not allowed. The correct sequence is PL = 3 to disabled to
PL = 4.
3. Parity latency is applied to WRITE and READ latency. WRITE latency = AL + CWL + PL.
READ latency = AL + CL + PL.
Figure 51: Command/Address Parity During Normal Operation
T0
T1
Valid 2
Valid 2
Ta0
Ta1
Ta2
Tb0
Tc0
Tc1
Td0
Valid 2
Error
Valid
Valid
Valid
DES2
DES2
Te0
Te1
Valid 3
Valid 3
CK_c
CK_t
Command/
Address
t > 2nCK
tPAR_UNKNOWN 2
tPAR_ALERT_ON
tRP
tPAR_ALERT_PW 1
ALERT_n
Valid 2
DES2
Command execution unknown
Error
Valid
Command not executed
Valid 3
Don’t Care
Time Break
Command executed
Notes:
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1. DRAM is emptying queues. Precharge all and parity checking are off until parity error
status bit is cleared.
2. Command execution is unknown; the corresponding DRAM internal state change may
or may not occur. The DRAM controller should consider both cases and make sure that
the command sequence meets the specifications. If WRITE CRC is enabled and a WRITE
CRC occurs during the tPAR_UNKNOWN window, the WRITE CRC Error Status Bit located
at MR5[3] may or may not get set.
3. Normal operation with parity latency (CA parity persistent error mode disabled). Parity
checking is off until parity error status bit is cleared.
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Command/Address Parity
Figure 52: Persistent CA Parity Error Checking Operation
T0
T1
Valid 2
Valid 2
CK_c
Ta0
Ta1
Ta2
Tb0
Valid 2
Error
Valid
Valid
Tc0
Tc1
Td0
Te0
Valid
DES
DES
DES
Te1
CK_t
Command/
Address
tPAR_ALERT_RSP
tPAR_UNKNOWN 2
tPAR_ALERT_ON
Valid 3
tRP
t > 2nCK
tPAR_ALERT_PW 1
ALERT_n
Valid 2
DES
Command execution unknown
Error
Valid
Command not executed
Valid 3
Don’t Care
Command executed
Notes:
Time Break
1. DRAM is emptying queues. Precharge all and parity check re-enable finished by
tPAR_ALERT_PW.
2. Command execution is unknown; the corresponding DRAM internal state change may
or may not occur. The DRAM controller should consider both cases and make sure that
the command sequence meets the specifications. If WRITE CRC is enabled and a WRITE
CRC occurs during the tPAR_UNKNOWN window, the WRITE CRC Error Status Bit located
at MR5[3] may or may not get set
3. Normal operation with parity latency and parity checking (CA parity persistent error
mode enabled).
Figure 53: CA Parity Error Checking – SRE Attempt
T1
T0
CK_c
Ta0
Ta1
Tb0
Tb1
Tc0
Tc1
Td0
Td1
Td2
Td3
Te0
Te1
DES5
Valid 3
CK_t
tCPDED
Command/
Address
DES1, 5
tXP
+ PL
DES1
Error2
DES6
tIS
+ PL
DES6
tIS
CKE
t > 2nCK
tIH
tPAR_ALERT_ON
Note 4
tRP
tPAR_ALERT_PW 1
ALERT_n
DES1, 5
DES6
Error2
DES1
Valid 3
DES5
Command execution unknown
Command not executed
Don’t Care
Command executed
Notes:
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Time Break
1. Only DESELECT command is allowed.
2. SELF REFRESH command error. The DRAM masks the intended SRE command and enters
precharge power-down.
3. Normal operation with parity latency (CA parity persistent error mode disabled). Parity
checking is off until the parity error status bit cleared.
4. The controller cannot disable the clock until it has been capable of detecting a possible
CA parity error.
5. Command execution is unknown; the corresponding DRAM internal state change may
or may not occur. The DRAM controller should consider both cases and make sure that
the command sequence meets the specifications.
6. Only a DESELECT command is allowed; CKE may go HIGH prior to Tc2 as long as DES
commands are issued.
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Command/Address Parity
Figure 54: CA Parity Error Checking – SRX Attempt
T0
Ta0
Ta1
SRX1
DES
DES
Tb0
Tb1
Tc0
Tc1
Tc2
Td0
Td1
Te0
Tf0
Error2
Valid 2
Valid 2
Valid 2
DES2, 3
DES2, 3
Valid 2, 4, 5
Valid 2, 4, 6
Valid 2, 4, 7
CK_c
CK_t
Command/
Address
tRP
t > 2nCK
tIS
CKE
tPAR_UNKNOWN
tPAR_ALERT_ON
tPAR_ALERT_PW
ALERT_n
tXS_FAST 8
tXS
tXSDLL
SRX1
DES
Error
Valid
Valid 4,5,6,7
Valid 3, 5
Command execution unknown
Command not executed
Don’t Care
Time Break
Command executed
Notes:
1. Self refresh abort = disable: MR4 [9] = 0.
2. Input commands are bounded by tXSDLL, tXS, tXS_ABORT, and tXS_FAST timing.
3. Command execution is unknown; the corresponding DRAM internal state change may
or may not occur. The DRAM controller should consider both cases and make sure that
the command sequence meets the specifications.
4. Normal operation with parity latency (CA parity persistent error mode disabled). Parity
checking off until parity error status bit cleared.
5. Only an MRS (limited to those described in the SELF REFRESH Operation section), ZQCS,
or ZQCL command is allowed.
6. Valid commands not requiring a locked DLL.
7. Valid commands requiring a locked DLL.
8. This figure shows the case from which the error occurred after tXS_FAST. An error may
also occur after tXS_ABORT and tXS.
Figure 55: CA Parity Error Checking – PDE/PDX
T1
T0
CK_c
Ta0
Ta1
Tb0
Tb1
Tc0
Tc1
Td0
Td1
Td2
Td3
Te0
Te1
DES4
Valid 3
CK_t
tCPDED
Command/
Address
DES1
Error2
tXP
+ PL
DES1
DES5
tIS
+ PL
DES5
tIS
CKE
t > 2nCK
tIH
tPAR_ALERT_ON
tRP
tPAR_ALERT_PW 1
ALERT_n
DES4
DES5
Command execution unknown
Error2
DES1
Command not executed
Valid 3
Don’t Care
Command executed
Notes:
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Time Break
1. Only DESELECT command is allowed.
2. Error could be precharge or activate.
3. Normal operation with parity latency (CA parity persistent error mode disabled). Parity
checking is off until parity error status bit cleared.
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Command/Address Parity
4. Command execution is unknown; the corresponding DRAM internal state change may
or may not occur. The DRAM controller should consider both cases and make sure that
the command sequence meets the specifications.
5. Only a DESELECT command is allowed; CKE may go HIGH prior to Td2 as long as DES
commands are issued.
Figure 56: Parity Entry Timing Example – tMRD_PAR
Ta0
Ta1
Ta2
Tb0
Tb1
Tb2
DES
MRS
DES
DES
MRS
DES
CK_c
CK_t
Command
Parity latency
PL = 0
Updating setting
PL = N
tMRD_PAR
Enable
parity
Don’t Care
Time Break
Note:
1. tMRD_PAR = tMOD + N; where N is the programmed parity latency.
Figure 57: Parity Entry Timing Example – tMOD_PAR
Ta0
Ta1
Ta2
Tb0
Tb1
Tb2
DES
MRS
DES
DES
Valid
DES
CK_c
CK_t
Command
Parity latency
PL = 0
Updating setting
PL = N
tMOD_PAR
Enable
parity
Time Break
Note:
Don’t Care
1. tMOD_PAR = tMOD + N; where N is the programmed parity latency.
Figure 58: Parity Exit Timing Example – tMRD_PAR
Ta0
Ta1
Ta2
Tb0
Tb1
Tb2
DES
MRS
DES
DES
MRS
DES
CK_c
CK_t
Command
Parity latency
PL = N
Updating setting
tMRD_PAR
Disable
parity
Time Break
Note:
CCMTD-1406124318-10419
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Don’t Care
1. tMRD_PAR = tMOD + N; where N is the programmed parity latency.
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Command/Address Parity
Figure 59: Parity Exit Timing Example – tMOD_PAR
Ta0
Ta1
Ta2
Tb0
Tb1
Tb2
DES
MRS
DES
DES
Valid
DES
CK_c
CK_t
Command
Parity latency
PL = N
Updating setting
tMOD_PAR
Disable
parity
Time Break
Note:
CCMTD-1406124318-10419
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Don’t Care
1. tMOD_PAR = tMOD + N; where N is the programmed parity latency.
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Figure 60: CA Parity Flow Diagram
CA
process start
MR5[2:0] set parity latency (PL)
MR5[4] set parity error status to 0
MR5[9] enable/disable persistent mode
CA
latched in
Yes
CA parity
enabled
Persistent
mode
enabled
Yes
CA parity
error
No
No
No
MR5[4] = 0
@ ADDR/CMD
latched
No
Yes
Yes
CA parity
error
Good CA
processed
Yes
Ignore
bad CMD
Command
execution
unknown
No
Good CA
processed
Ignore
bad CMD
115
Command
execution
unknown
ALERT_n LOW
44 to 144 CKs
MR5[4] = 0 Yes
@ ADDR/CMD
latched
No
Yes
ALERT_n LOW
44 to 144 CKs
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2016 Micron Technology, Inc. All rights reserved.
Log error/
set parity status
Internal
precharge all
Internal
precharge all
ALERT_n HIGH
ALERT_n HIGH
Command
execution
unknown
No
Normal
operation ready
Bad CA
processed
Operation ready?
Command
execution
unknown
Normal operation ready
MR5[4] reset to 0 if desired
Normal operation ready
MR5[4] reset to 0 if desired
8Gb: x8, x16 Automotive DDR4 SDRAM
Command/Address Parity
CA error
Good CA
processed
Log error/
set parity status
8Gb: x8, x16 Automotive DDR4 SDRAM
Per-DRAM Addressability
Per-DRAM Addressability
DDR4 allows programmability of a single, specific DRAM on a rank. As an example, this
feature can be used to program different ODT or V REF values on each DRAM on a given
rank. Because per-DRAM addressability (PDA) mode may be used to program optimal
VREF for the DRAM, the data set up for first DQ0 transfer or the hold time for the last
DQ0 transfer cannot be guaranteed. The DRAM may sample DQ0 on either the first falling or second rising DQS transfer edge. This supports a common implementation between BC4 and BL8 modes on the DRAM. The DRAM controller is required to drive DQ0
to a stable LOW or HIGH state during the length of the data transfer for BC4 and BL8
cases. Note, both fixed and on-the-fly (OTF) modes are supported for BC4 and BL8 during PDA mode.
1. Before entering PDA mode, write leveling is required.
• BL8 or BC4 may be used.
2. Before entering PDA mode, the following MR settings are possible:
3.
4.
5.
6.
7.
8.
• RTT(Park) MR5 A[8:6] = Enable
• RTT(NOM) MR1 A[10:8] = Enable
Enable PDA mode using MR3 [4] = 1. (The default programed value of MR3[4] = 0.)
In PDA mode, all MRS commands are qualified with DQ0. The device captures
DQ0 by using DQS signals. If the value on DQ0 is LOW, the DRAM executes the
MRS command. If the value on DQ0 is HIGH, the DRAM ignores the MRS command. The controller can choose to drive all the DQ bits.
Program the desired DRAM and mode registers using the MRS command and
DQ0.
In PDA mode, only MRS commands are allowed.
The MODE REGISTER SET command cycle time in PDA mode, AL + CWL + BL/2 0.5tCK + tMRD_PDA + PL, is required to complete the WRITE operation to the
mode register and is the minimum time required between two MRS commands.
Remove the device from PDA mode by setting MR3[4] = 0. (This command requires DQ0 = 0.)
Note: Removing the device from PDA mode will require programming the entire MR3
when the MRS command is issued. This may impact some PDA values programmed
within a rank as the EXIT command is sent to the rank. To avoid such a case, the PDA
enable/disable control bit is located in a mode register that does not have any PDA
mode controls.
In PDA mode, the device captures DQ0 using DQS signals the same as in a normal
WRITE operation; however, dynamic ODT is not supported. Extra care is required for
the ODT setting. If RTT(NOM) MR1 [10:8] = enable, device data termination needs to be
controlled by the ODT pin, and applies the same timing parameters (defined below).
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Symbol
Parameter
DODTLon
Direct ODT turnon latency
DODTLoff
Direct ODT turn off latency
tADC
RTT change timing skew
tAONAS
Asynchronous RTT(NOM) turn-on delay
tAOFAS
Asynchronous RTT(NOM) turn-off delay
116
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8Gb: x8, x16 Automotive DDR4 SDRAM
Per-DRAM Addressability
Figure 61: PDA Operation Enabled, BL8
&.BF
&.BW
05$
3'$HQDEOH
056
056
056
W 02'
W 05'B3'$
&:/$/3/
'46BW
'46BF
'4
W 3'$B6
W 3'$B+
'2'7/RII :/
2'7
'2'7/RQ :/
577
577 3DUN
Note:
577 120
577 3DUN
1. RTT(Park) = Enable; RTT(NOM) = Enable; WRITE preamble set = 2tCK; and DLL = On.
Figure 62: PDA Operation Enabled, BC4
CK_c
CK_t
MR3 A4 = 1
(PDA enable)
MRS
MRS
MRS
tMOD
tMRD_PDA
CWL+AL+PL
DQS_t
DQS_c
DQ0
tPDA_S
tPDA_H
DODTLoff = WL-3
ODT
DODTLon = WL-3
RTT
RTT(Park)
Note:
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RTT(NOM)
RTT(Park)
1. RTT(Park) = Enable; RTT(NOM) = Enable; WRITE preamble set = 2tCK; and DLL = On.
117
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8Gb: x8, x16 Automotive DDR4 SDRAM
Per-DRAM Addressability
Figure 63: MRS PDA Exit
&.BF
&.BW
05$
3'$GLVDEOH
056
9DOLG
&:/$/3/
W 02'B3'$
'46BW
'46BF
'4
W 3'$B6
W 3'$B+
'2'7/RII :/
2'7
'2'7/RQ :/
577
577 3DUN
Note:
CCMTD-1406124318-10419
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577 120
577 3DUN
1. RTT(Park) = Enable; RTT(NOM) = Enable; WRITE preamble set = 2tCK; and DLL = On.
118
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8Gb: x8, x16 Automotive DDR4 SDRAM
VREFDQ Calibration
VREFDQ Calibration
The V REFDQ level, which is used by the DRAM DQ input receivers, is internally generated. The DRAM V REFDQ does not have a default value upon power-up and must be set
to the desired value, usually via V REFDQ calibration mode. If PDA or PPR modes (hPPR or
sPPR) are used prior to V REFDQ calibration, V REFDQ should initially be set at the midpoint
between the V DD,max, and the LOW as determined by the driver and ODT termination
selected with wide voltage swing on the input levels and setup and hold times of approximately 0.75UI. The memory controller is responsible for V REFDQ calibration to determine the best internal V REFDQ level. The V REFDQ calibration is enabled/disabled via
MR6[7], MR6[6] selects Range 1 (60% to 92.5% of V DDQ) or Range 2 (45% to 77.5% of
VDDQ), and an MRS protocol using MR6[5:0] to adjust the V REFDQ level up and down.
MR6[6:0] bits can be altered using the MRS command if MR6[7] is enabled. The DRAM
controller will likely use a series of writes and reads in conjunction with V REFDQ adjustments to obtain the best V REFDQ, which in turn optimizes the data eye.
The internal V REFDQ specification parameters are voltage range, step size, V REF step
time, V REF full step time, and V REF valid level. The voltage operating range specifies the
minimum required V REF setting range for DDR4 SDRAM devices. The minimum range is
defined by V REFDQ,min and V REFDQ,max. As noted, a calibration sequence, determined by
the DRAM controller, should be performed to adjust V REFDQ and optimize the timing
and voltage margin of the DRAM data input receivers. The internal V REFDQ voltage value
may not be exactly within the voltage range setting coupled with the V REF set tolerance;
the device must be calibrated to the correct internal V REFDQ voltage.
Figure 64: VREFDQ Voltage Range
VDDQ
VREF,max
VREF
range
VREF,min
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119
VSWING small
System variance
VSWING large
Total range
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8Gb: x8, x16 Automotive DDR4 SDRAM
VREFDQ Calibration
VREFDQ Range and Levels
Table 37: VREFDQ Range and Levels
MR6[5:0]
Range 1 MR6[6] 0
Range 2 MR6[6] 1
MR6[5:0]
Range 1 MR6[6] 0
Range 2 MR6[6] 1
00 0000
60.00%
45.00%
01 1010
76.90%
61.90%
00 0001
60.65%
45.65%
01 1011
77.55%
62.55%
00 0010
61.30%
46.30%
01 1100
78.20%
63.20%
00 0011
61.95%
46.95%
01 1101
78.85%
63.85%
00 0100
62.60%
47.60%
01 1110
79.50%
64.50%
00 0101
63.25%
48.25%
01 1111
80.15%
65.15%
00 0110
63.90%
48.90%
10 0000
80.80%
65.80%
00 0111
64.55%
49.55%
10 0001
81.45%
66.45%
00 1000
65.20%
50.20%
10 0010
82.10%
67.10%
00 1001
65.85%
50.85%
10 0011
82.75%
67.75%
00 1010
66.50%
51.50%
10 0100
83.40%
68.40%
00 1011
67.15%
52.15%
10 0101
84.05%
69.05%
00 1100
67.80%
52.80%
10 0110
84.70%
69.70%
00 1101
68.45%
53.45%
10 0111
85.35%
70.35%
00 1110
69.10%
54.10%
10 1000
86.00%
71.00%
00 1111
69.75%
54.75%
10 1001
86.65%
71.65%
01 0000
70.40%
55.40%
10 1010
87.30%
72.30%
01 0001
71.05%
56.05%
10 1011
87.95%
72.95%
01 0010
71.70%
56.70%
10 1100
88.60%
73.60%
01 0011
72.35%
57.35%
10 1101
89.25%
74.25%
01 0100
73.00%
58.00%
10 1110
89.90%
74.90%
01 0101
73.65%
58.65%
10 1111
90.55%
75.55%
01 0110
74.30%
59.30%
11 0000
91.20%
76.20%
01 0111
74.95%
59.95%
11 0001
91.85%
76.85%
01 1000
75.60%
60.60%
11 0010
92.50%
77.50%
01 1001
76.25%
61.25%
11 0011 to 11 1111 = Reserved
VREFDQ Step Size
The V REF step size is defined as the step size between adjacent steps. V REF step size ranges from 0.5% V DDQ to 0.8% V DDQ. However, for a given design, the device has one value
for V REF step size that falls within the range.
The V REF set tolerance is the variation in the V REF voltage from the ideal setting. This accounts for accumulated error over multiple steps. There are two ranges for V REF set tolerance uncertainty. The range of V REF set tolerance uncertainty is a function of number
of steps n.
The V REF set tolerance is measured with respect to the ideal line, which is based on the
MIN and MAX V REF value endpoints for a specified range. The internal V REFDQ voltage
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8Gb: x8, x16 Automotive DDR4 SDRAM
VREFDQ Calibration
value may not be exactly within the voltage range setting coupled with the V REF set tolerance; the device must be calibrated to the correct internal V REFDQ voltage.
Figure 65: Example of VREF Set Tolerance and Step Size
Actual VREF
output
Straight line
(endpoint fit)
VREF
VREF set
tolerance
VREF set
tolerance
VREF
step size
Digital Code
Note:
1. Maximum case shown.
VREFDQ Increment and Decrement Timing
The V REF increment/decrement step times are defined by V REF,time. V REF,time is defined
from t0 to t1, where t1 is referenced to the V REF voltage at the final DC level within the
VREF valid tolerance (VREF,val_tol). The V REF valid level is defined by V REF,val tolerance to
qualify the step time t1. This parameter is used to insure an adequate RC time constant
behavior of the voltage level change after any V REF increment/decrement adjustment.
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8Gb: x8, x16 Automotive DDR4 SDRAM
VREFDQ Calibration
Figure 66: VREFDQ Timing Diagram for VREF,time Parameter
CK_c
CK_t
MRS
Command
VREF setting
adjustment
DQ VREF
Old VREF setting
Updating VREF setting
New VREF setting
VREF_time
t0
t1
Don’t Care
Note:
1. t0 is referenced to the MRS command clock
t1 is referenced to VREF,tol
VREFDQ calibration mode is entered via an MRS command, setting MR6[7] to 1 (0 disables V REFDQ calibration mode) and setting MR6[6] to either 0 or 1 to select the desired
range (MR6[5:0] are "Don't Care"). After V REFDQ calibration mode has been entered,
VREFDQ calibration mode legal commands may be issued once tVREFDQE has been satisfied. Legal commands for V REFDQ calibration mode are ACT, WR, WRA, RD, RDA, PRE,
DES, and MRS to set V REFDQ values, and MRS to exit V REFDQ calibration mode. Also, after
VREFDQ calibration mode has been entered, “dummy” WRITE commands are allowed
prior to adjusting the V REFDQ value the first time V REFDQ calibration is performed after
initialization.
Setting V REFDQ values requires MR6[7] be set to 1 and MR6[6] be unchanged from the
initial range selection; MR6[5:0] may be set to the desired V REFDQ values. If MR6[7] is set
to 0, MR6[6:0] are not written. V REF,time-short or V REF,time-long must be satisfied after each
MR6 command to set V REFDQ value before the internal V REFDQ value is valid.
If PDA mode is used in conjunction with V REFDQ calibration, the PDA mode requirement that only MRS commands are allowed while PDA mode is enabled is not waived.
That is, the only V REFDQ calibration mode legal commands noted above that may be
used are the MRS commands: MRS to set V REFDQ values and MRS to exit V REFDQ calibration mode.
The last MR6[6:0] setting written to MR6 prior to exiting V REFDQ calibration mode is the
range and value used for the internal V REFDQ setting. V REFDQ calibration mode may be
exited when the DRAM is in idle state. After the MRS command to exit V REFDQ calibration mode has been issued, DES must be issued until tVREFDQX has been satisfied
where any legal command may then be issued. V REFDQ setting should be updated if the
die temperature changes too much from the calibration temperature.
The following are typical script when applying the above rules for V REFDQ calibration
routine when performing V REFDQ calibration in Range 1:
• MR6[7:6]10 [5:0]XXXXXXX.
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8Gb: x8, x16 Automotive DDR4 SDRAM
VREFDQ Calibration
– Subsequent legal commands while in V REFDQ calibration mode: ACT, WR, WRA, RD,
RDA, PRE, DES, and MRS (to set V REFDQ values and exit V REFDQ calibration mode).
• All subsequent V REFDQ calibration MR setting commands are MR6[7:6]10
[5:0]VVVVVV.
– "VVVVVV" are desired settings for V REFDQ.
• Issue ACT/WR/RD looking for pass/fail to determine V CENT (midpoint) as needed.
• To exit V REFDQ calibration, the last two V REFDQ calibration MR commands are:
– MR6[7:6]10 [5:0]VVVVVV* where VVVVVV* = desired value for V REFDQ.
– MR6[7]0 [6:0]XXXXXXX to exit V REFDQ calibration mode.
The following are typical script when applying the above rules for V REFDQ calibration
routine when performing V REFDQ calibration in Range 2:
• MR6[7:6]11 [5:0]XXXXXXX.
– Subsequent legal commands while in V REFDQ calibration mode: ACT, WR, WRA, RD,
RDA, PRE, DES, and MRS (to set V REFDQ values and exit V REFDQ calibration mode).
• All subsequent V REFDQ calibration MR setting commands are MR6[7:6]11
[5:0]VVVVVV.
– "VVVVVV" are desired settings for V REFDQ.
• Issue ACT/WR/RD looking for pass/fail to determine V CENT (midpoint) as needed.
• To exit V REFDQ calibration, the last two V REFDQ calibration MR commands are:
– MR6[7:6]11 [5:0]VVVVVV* where VVVVVV* = desired value for V REFDQ.
– MR6[7]0 [6:0]XXXXXXX to exit V REFDQ calibration mode.
Note: Range may only be set or changed when entering V REFDQ calibration mode;
changing range while in or exiting V REFDQ calibration mode is illegal.
Figure 67: VREFDQ Training Mode Entry and Exit Timing Diagram
T0
T1
DES
MRS
Ta0
Ta1
Tb0
Tb1
Tc0
Tc1
DES
CMD
DES
CMD
DES
MRS1,2
Td0
Td1
Td2
DES
WR
DES
CK_c
CK_t
Command
tVREFDQE
VREFDQ training on
tVREFDQX
New VREFDQ
value or write
New VREFDQ
value or write
VREFDQ training off
Don’t Care
Notes:
CCMTD-1406124318-10419
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1. New VREFDQ values are not allowed with an MRS command during calibration mode entry.
2. Depending on the step size of the latest programmed VREF value, VREF must be satisfied
before disabling VREFDQ training mode.
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8Gb: x8, x16 Automotive DDR4 SDRAM
VREFDQ Calibration
Figure 68: VREF Step: Single Step Size Increment Case
VREF
Voltage
VREF
(VDDQ(DC))
VREF,val_tol
Step size
t1
Time
Figure 69: VREF Step: Single Step Size Decrement Case
VREF
Voltage
t1
Step size
VREF,val_tol
VREF
(VDDQ(DC))
Time
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8Gb: x8, x16 Automotive DDR4 SDRAM
VREFDQ Calibration
Figure 70: VREF Full Step: From VREF,min to VREF,maxCase
VREF
Voltage
VREF,max
VREF,val_tol
Full range
step
VREF
(VDDQ(DC))
t1
VREF,min
Time
Figure 71: VREF Full Step: From VREF,max to VREF,minCase
VREF
Voltage
VREF,max
Full range
step
t1
VREF,val_tol
VREF,min
VREF
(VDDQ(DC))
Time
VREFDQ Target Settings
The V REFDQ initial settings are largely dependant on the ODT termination settings. The
table below shows all of the possible initial settings available for V REFDQ training; it is
unlikely the lower ODT settings would be used in most cases.
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8Gb: x8, x16 Automotive DDR4 SDRAM
VREFDQ Calibration
Table 38: VREFDQ Settings (VDDQ = 1.2V)
RON
34 ohm
48 ohm
ODT
Vx – VIN LOW (mV)
VREFDQ (mv)
VREFDQ (%VDDQ)
34 ohm
600
900
75%
40 ohm
550
875
73%
48 ohm
500
850
71%
60 ohm
435
815
68%
80 ohm
360
780
65%
120 ohm
265
732
61%
240 ohm
150
675
56%
34 ohm
700
950
79%
40 ohm
655
925
77%
48 ohm
600
900
75%
60 ohm
535
865
72%
80 ohm
450
825
69%
120 ohm
345
770
64%
240 ohm
200
700
58%
Figure 72: VREFDQ Equivalent Circuit
VDDQ
VDDQ
ODT
RXer
Vx
VREFDQ
(internal)
RON
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Connectivity Test Mode
Connectivity Test Mode
Connectivity test (CT) mode is similar to boundary scan testing but is designed to significantly speed up the testing of electrical continuity of pin interconnections between
the device and the memory controller on the PC boards. Designed to work seamlessly
with any boundary scan device, CT mode is supported in all ×4, ×8, and ×16 non-3DS
devices (JEDEC states CT mode for ×4 and ×8 is not required on 4Gb and is an optional
feature on 8Gb and above). 3DS devices do not support CT mode and the TEN pin
should be considered RFU maintained LOW at all times.
Contrary to other conventional shift-register-based test modes, where test patterns are
shifted in and out of the memory devices serially during each clock, the CT mode allows
test patterns to be entered on the test input pins in parallel and the test results to be
extracted from the test output pins of the device in parallel. These two functions are also performed at the same time, significantly increasing the speed of the connectivity
check. When placed in CT mode, the device appears as an asynchronous device to the
external controlling agent. After the input test pattern is applied, the connectivity test
results are available for extraction in parallel at the test output pins after a fixed propagation delay time.
Note: A reset of the device is required after exiting CT mode (see RESET and Initialization Procedure).
Pin Mapping
Only digital pins can be tested using the CT mode. For the purposes of a connectivity
check, all the pins used for digital logic in the device are classified as one of the following types:
• Test enable (TEN): When asserted HIGH, this pin causes the device to enter CT mode.
In CT mode, the normal memory function inside the device is bypassed and the I/O
pins appear as a set of test input and output pins to the external controlling agent.
Additionally, the device will set the internal V REFDQ to V DDQ × 0.5 during CT mode
(this is the only time the DRAM takes direct control over setting the internal V REFDQ).
The TEN pin is dedicated to the connectivity check function and will not be used during normal device operation.
• Chip select (CS_n): When asserted LOW, this pin enables the test output pins in the
device. When de-asserted, these output pins will be High-Z. The CS_n pin in the device serves as the CS_n pin in CT mode.
• Test input: A group of pins used during normal device operation designated as test
input pins. These pins are used to enter the test pattern in CT mode.
• Test output: A group of pins used during normal device operation designated as test
output pins. These pins are used for extraction of the connectivity test results in CT
mode.
• RESET_n: This pin must be fixed high level during CT mode, as in normal function.
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Connectivity Test Mode
Table 39: Connectivity Mode Pin Description and Switching Levels
CT Mode
Pins
Pin Name During Normal Memory Operation
Switching Level
Test enable
TEN
CMOS (20%/80% VDD)
Chip select
Test
input
Test
output
Notes
1, 2
VREFCA ±200mV
3
BA[1:0], BG[1:0], A[9:0], A10/AP, A11, A12/BC_n, A13, WE_n/A14,
A
CAS_n/A15, RAS_n/A16, A17, CKE, ACT_n, ODT, CLK_t, CLK_c, PAR
VREFCA ±200mV
3
B LDM_n/LDBI_n, UDM_n/UDBI_n; DM_n/DBI_n
VREFDQ ±200mV
4
C ALERT_n
CMOS (20%/80% VDD)
2, 5
D RESET_n
CMOS (20%/80% VDD)
2
VTT ±100mV
6
CS_n
DQ[15:0], UDQS_t, UDQS_c, LDQS_t, LDQS_c; DQS_t, DQS_c
Notes:
1. TEN: Connectivity test mode is active when TEN is HIGH and inactive when TEN is LOW.
TEN must be LOW during normal operation.
2. CMOS is a rail-to-rail signal with DC HIGH at 80% and DC LOW at 20% of VDD (960mV
for DC HIGH and 240mV for DC LOW.)
3. VREFCA should be VDD/2.
4. VREFDQ should be VDDQ/2.
5. ALERT_n switching level is not a final setting.
6. VTT should be set to VDD/2.
Minimum Terms Definition for Logic Equations
The test input and output pins are related by the following equations, where INV denotes a logical inversion operation and XOR a logical exclusive OR operation:
MT0 = XOR (A1, A6, PAR)
MT1 = XOR (A8, ALERT_n, A9)
MT2 = XOR (A2, A5, A13) or XOR (A2, A5, A13, A17)
MT3 = XOR (A0, A7, A11)
MT4 = XOR (CK_c, ODT, CAS_n/A15)
MT5 = XOR (CKE, RAS_n/A16, A10/AP)
MT6 = XOR (ACT_n, A4, BA1)
MT7 = ×16: XOR (DMU_n/DBIU_n, DML_n/DBIL_n, CK_t)
= x8: XOR (BG1, DML_n/DBIL_n, CK_t)
= x4: XOR (BG1, CK_t)
MT8 = XOR (WE_n/A14, A12 / BC, BA0)
MT9 = XOR (BG0, A3, RESET_n and TEN)
Logic Equations for a x4 Device
DQ0 = XOR (MT0, MT1)
DQ1 = XOR (MT2, MT3)
DQ2 = XOR (MT4, MT5)
DQ3 = XOR (MT6, MT7)
DQS_t = MT8
DQS_c = MT9
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8Gb: x8, x16 Automotive DDR4 SDRAM
Connectivity Test Mode
Logic Equations for a x8 Device
DQ0 = MT0
DQ1 = MT1
DQ2 = MT2
DQ3 = MT3
DQ4 = MT4
DQ5 = MT5
DQ6 = MT6
DQ7 = MT7
DQS_t = MT8
DQS_c = MT9
Logic Equations for a x16 Device
DQ0 = MT0
DQ1 = MT1
DQ2 = MT2
DQ3 = MT3
DQ4 = MT4
DQ5 = MT5
DQ6 = MT6
DQ7 = MT7
DQ8 = INV DQ0
DQ9 = INV DQ1
DQ10 = INV DQ2
DQ11 = INV DQ3
DQ12 = INV DQ4
DQ13 = INV DQ5
DQ14 = INV DQ6
DQ15 = INV DQ7
LDQS_t = MT8
LDQS_c = MT9
UDQS_t = INV LDQS_t
UDQS_c = INV LDQS_c
CT Input Timing Requirements
Prior to the assertion of the TEN pin, all voltage supplies, including V REFCA, must be valid and stable and RESET_n registered high prior to entering CT mode. Upon the assertion of the TEN pin HIGH with RESET_n, CKE, and CS_n held HIGH; CLK_t, CLK_c, and
CKE signals become test inputs within tCTECT_Valid. The remaining CT inputs become
valid tCT_Enable after TEN goes HIGH when CS_n allows input to begin sampling, provided inputs were valid for at least tCT_Valid. While in CT mode, refresh activities in the
memory arrays are not allowed; they are initiated either externally (auto refresh) or internally (self refresh).
The TEN pin may be asserted after the DRAM has completed power-on. After the DRAM
is initialized and V REFDQ is calibrated, CT mode may no longer be used. The TEN pin
may be de-asserted at any time in CT mode. Upon exiting CT mode, the states and the
integrity of the original content of the memory array are unknown. A full reset of the
memory device is required.
After CT mode has been entered, the output signals will be stable within tCT_Valid after
the test inputs have been applied as long as TEN is maintained HIGH and CS_n is maintained LOW.
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Connectivity Test Mode
Figure 73: Connectivity Test Mode Entry
Ta
Tb
Tc
Td
CK_t
Valid input
CK_c
tCKSRX
tCT_IS
tIS
T = 10ns
Valid input
tCT_IS
CKE
Valid input
Valid input
tCTCKE_Valid
T = 200μs
T = 500μs
RESET_n
tCT_IS
TEN
tCTCKE_Valid>10ns
tCT_Enable
tCT_IS >0ns
CS_n
tCT_IS
CT Inputs
Valid input
Valid input
tCT_Valid
tCT_Valid
tCT_Valid
CT Outputs
Valid
Valid
Don’t Care
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8Gb: x8, x16 Automotive DDR4 SDRAM
Excessive Row Activation
Excessive Row Activation
Rows can be accessed a limited number of times within a certain time period before adjacent rows require refresh. The maximum activate count (MAC) is the maximum number of activates that a single row can sustain within a time interval of equal to or less
than the maximum activate window (tMAW) before the adjacent rows need to be refreshed, regardless of how the activates are distributed over tMAW.
Micron's DDR4 devices automatically perform a type of TRR mode in the background
and provide an MPR Page 3 MPR3[3:0] of 1000, indicating there is no restriction to the
number of ACTIVATE commands to a given row in a refresh period provided DRAM timing specifications are not violated. However, specific attempts to by-pass TRR may result in data disturb.
Table 40: MAC Encoding of MPR Page 3 MPR3
[7] [6] [5] [4] [3] [2] [1] [0]
x
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x
x
0
0
0
0
Untested
x
x
x
x
0
0
0
1
tMAC
x
x
x
x
0
0
1
0
tMAC
= 600K
x
x
x
x
0
0
1
1
tMAC
= 500K
0
tMAC
= 400K
tMAC
= 300K
x
Note:
x
MAC
x
x
x
0
1
0
= 700K
x
x
x
x
0
1
0
1
x
x
x
x
0
1
1
0
x
x
x
x
0
1
1
1
x
x
x
x
1
0
0
0
Unlimited
x
x
x
x
1
0
0
1
Reserved
x
x
x
x
:
:
:
:
Reserved
x
x
x
x
1
1
1
1
Reserved
Comments
The device has not been tested for MAC.
Reserved
tMAC
= 200K
There is no restriction to the number of ACTIVATE commands to a given row in a refresh period provided DRAM timing specifications are not violated.
1. MAC encoding in MPR Page 3 MPR3.
131
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8Gb: x8, x16 Automotive DDR4 SDRAM
Post Package Repair
Post Package Repair
Post Package Repair
JEDEC defines two modes of Post Package Repair (PPR): soft Post Package Repair (sPPR)
and hard Post Package Repair (hPPR). sPPR is non-persistent so the repair row maybe
altered; that is, sPPR is NOT a permanent repair and even though it will repair a row, the
repair can be reversed, reassigned via another sPPR, or made permanent via hPPR.
Hard Post Package Repair is persistent so once the repair row is assigned for a hPPR address, further PPR commands to a previous hPPR section should not be performed, that
is, hPPR is a permanent repair; once repaired, it cannot be reversed. The controller provides the failing row address in the hPPR/sPPR sequence to the device to perform the
row repair. hPPR Mode and sPPR Mode may not be enabled at the same time.
JEDEC states hPPR is optional for 4Gb and sPPR is optional for 4Gb and 8Gb parts however Micron 4Gb and 8Gb DDR4 DRAMs should have both sPPR and hPPR support. The
hPPR support is identified via an MPR read from MPR Page 2, MPR0[7] and sPPR support is identified via an MPR read from MPR Page 2, MPR0[6].
The JEDEC minimum support requirement for DDR4 PPR (hPPR or sPPR) is to provide
one row of repair per bank group (BG), x4/x8 have 4 BG and x16 has 2 BG; this is a total
of 4 repair rows available on x4/x8 and 2 repair rows available on x16. Micron PPR support exceeds the JEDEC minimum requirements; Micron DDR4 DRAMs have at least
one row of repair for each bank which is essentially 4 row repairs per BG for a total of 16
repair rows for x4 and x8 and 8 repair rows for x16; a 4x increase in repair rows.
JEDEC requires the user to have all sPPR row repair addresses reset and cleared prior to
enabling hPPR Mode. Micron DDR4 PPR does not have this restriction, the existing
sPPR row repair addresses are not required to be cleared prior to entering hPPR mode.
Each bank in a BG is PPR independent: sPPR or hPPR issued to a bank will not alter a
sPPR row repair existing in a different bank.
sPPR followed by sPPR to same bank
When PPR is issued to a bank for the first time and is a sPPR command, the repair row
will be a sPPR. When a subsequent sPPR is issued to the same bank, the previous sPPR
repair row will be cleared and used for the subsequent sPPR address as the sPPR operation is non-persistent.
sPPR followed by hPPR to same bank
When a PPR is issued to a bank for the first time and is a sPPR command, the repair row
will be a sPPR. When a subsequent hPPR is issued to the same bank, the initial sPPR
repair row will be cleared and used for the hPPR address1. If a further subsequent PPR
(hPPR or sPPR) is issued to the same bank, the further subsequent PPR ( hPPR or sPPR)
repair row will not clear or overwrite the previous hPPR address as the hPPR operation
is persistent.
hPPR followed by hPPR or sPPR to same bank
When a PPR is issued to a bank for the first time and is a hPPR command, the repair row
will be a hPPR. When a subsequent PPR (hPPR or sPPR) is issued to the same bank, the
subsequent PPR ( hPPR or sPPR) repair row will not clear or overwrite the initial hPPR
address as the initial hPPR is persistent.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Hard Post Package Repair
Note: Newer Micron DDR4 designs may not guarantee that an sPPR followed by an
hPPR to the same bank will result the same repair row being used. Contact factory for
more information.
Hard Post Package Repair
All banks must be precharged and idle. DBI and CRC modes must be disabled. Both
sPPR and hPPR must be disabled. sPPR is disabled with MR4[5] = 0. hPPR is disabled
with MR4[13] = 0, which is the normal state, and hPPR is enabled with MR4 [13]= 1,
which is the hPPR enabled state. There are two forms of hPPR mode. Both forms of
hPPR have the same entry requirement as defined in the sections below. The first command sequence uses a WRA command and supports data retention with a REFRESH
operation except for the bank containing the row that is being repaired; JEDEC has relaxed this requirement and allows BA[0] to be a Don't Care regarding the banks which
are not required to maintain data a REFRESH operation during hPPR. The second command sequence uses a WR command (a REFRESH operation can't be performed in this
command sequence). The second command sequence doesn't support data retention
for the target DRAM.
hPPR Row Repair - Entry
As stated above, all banks must be precharged and idle. DBI and CRC modes must be
disabled, and all timings must be followed as shown in the timing diagram that follows.
All other commands except those listed in the following sequences are illegal.
1. Issue MR4[13] 1 to enter hPPR mode enable.
a. All DQ are driven HIGH.
2. Issue four consecutive guard key commands (shown in the table below) to MR0
with each command separated by tMOD. The PPR guard key settings are the same
whether performing sPPR or hPPR mode.
a. Any interruption of the key sequence by other commands, such as ACT, WR,
RD, PRE, REF, ZQ, and NOP, are not allowed.
b. If the guard key bits are not entered in the required order or interrupted with
other MR commands, hPPR will not be enabled, and the programming cycle
will result in a NOP.
c. When the hPPR entry sequence is interrupted and followed by ACT and WR
commands, these commands will be conducted as normal DRAM commands.
d. JEDEC allows A6:0 to be Don't Care on 4Gb and 8Gb devices from a supplier
perspective and the user should rely on vendor datasheet.
Table 41: PPR MR0 Guard Key Settings
MR0
BG1:0
BA1:0
A17:12
A11
A10
A9
A8
A7
A6:0
First guard key
0
0
xxxxxx
1
1
0
0
1
1111111
Second guard key
0
0
xxxxxx
0
1
1
1
1
1111111
Third Guard key
0
0
xxxxxx
1
0
1
1
1
1111111
Fourth guard key
0
0
xxxxxx
0
0
1
1
1
1111111
133
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8Gb: x8, x16 Automotive DDR4 SDRAM
Hard Post Package Repair
hPPR Row Repair – WRA Initiated (REF Commands Allowed)
1. Issue an ACT command with failing BG and BA with the row address to be repaired.
2. Issue a WRA command with BG and BA of failing row address.
a. The address must be at valid levels, but the address is Don't Care.
3. All DQ of the target DRAM should be driven LOW for 4nCK (bit 0 through bit 7)
after WL (WL = CWL + AL + PL) in order for hPPR to initiate repair.
a. Repair will be initiated to the target DRAM only if all DQ during bit 0 through
bit 7 are LOW. The bank under repair does not get the REFRESH command
applied to it.
b. Repair will not be initiated to the target DRAM if any DQ during bit 0 through
bit 7 is HIGH.
1. JEDEC states: All DQs of target DRAM should be LOW for 4tCK. If HIGH
is driven to all DQs of a DRAM consecutively for equal to or longer than
2tCK, then DRAM does not conduct hPPR and retains data if REF command is properly issued; if all DQs are neither LOW for 4tCK nor HIGH
for equal to or longer than 2tCK, then hPPR mode execution is unknown.
c. DQS should function normally.
4. REF command may be issued anytime after the WRA command followed by WL +
4nCK + tWR + tRP.
a. Multiple REF commands are issued at a rate of tREFI or tREFI/2, however
back-to-back REF commands must be separated by at least tREFI/4 when the
DRAM is in hPPR mode.
b. All banks except the bank under repair will perform refresh.
5. Issue PRE after tPGM time so that the device can repair the target row during tPGM
time.
a. Wait tPGM_Exit after PRE to allow the device to recognize the repaired target
row address.
6. Issue MR4[13] 0 command to hPPR mode disable.
a. Wait tPGMPST for hPPR mode exit to complete.
b. After tPGMPST has expired, any valid command may be issued.
The entire sequence from hPPR mode enable through hPPR mode disable may be repeated if more than one repair is to be done.
After completing hPPR mode, MR0 must be re-programmed to a prehPPR mode state if
the device is to be accessed.
After hPPR mode has been exited, the DRAM controller can confirm if the target row
was repaired correctly by writing data into the target row and reading it back.
CCMTD-1406124318-10419
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134
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8Gb: x8, x16 Automotive DDR4 SDRAM
Hard Post Package Repair
Figure 74: hPPR WRA – Entry
7
7
7D
7D
7E
7E
7F
7F
7G
&0'
056
'(6
056
'(6
056
'(6
056
'(6
056
%*
9DOLG
1$
1$
1$
1$
&.BF
7G
7H
7I
7J
'(6
$&7
:5$
'(6
1$
%*I
%*I
1$
&.BW
%$
9DOLG
1$
1$
1$
1$
1$
%$I
%$I
1$
$''5
9DOLG
$
1$
VW.H\
1$
QG .H\
1$
UG .H\
1$
WK .H\
1$
9DOLG
9DOLG
1$
&.(
'46BW
'46BF
'4V
1RUPDO
0RGH
W 5&'
W 02'
W 02'
W 02'
W 02'
W 02'
K335(QWU\
VW*XDUG.H\9DOLGDWH
QG *XDUG.H\9DOLGDWH
UG *XDUG.H\9DOLGDWH
WK *XDUG.H\9DOLGDWH
$OO%DQNV
3UHFKDUJHG
DQGLGOHVWDWH
K3355HSDLU
'RQ¶W&DUH
Figure 75: hPPR WRA – Repair and Exit
Te0
Tf0
CMD
ACT
BG
BGf
BA
ADDR
CK_c
Tg0
Tg1
Th0
Th1
Tj0
Tj1
Tj2
WRA
DES
DES
DES
BGf
N/A
N/A
N/A
BAf
BAf
N/A
N/A
Valid
Valid
N/A
N/A
Tk0
DES
DES
REF/DES
REF/DES
PRE
N/A
N/A
N/A
N/A
Valid
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
Tk1
Tm0
Tm1
Tn0
REF/DES
MRSx
DES
Valid
N/A
Valid
N/A
Valid
Valid
N/A
Valid
N/A
Valid
Valid
N/A
Valid
(A13 = 0)
N/A
Valid
CK_t
CKE
WL = CWL+AL+PL
tWR +tRP + 1nCK
4nCK
DQS_t
DQS_c
DQs1
bit 0
All Banks
Precharged
and idle state
bit 1
bit 6
bit 7
tPGM
tRCD
hPPR Repair
tPGM_Exit
hPPR Repair
hPPR Repair
hPPR Recognition
tPGMPST
hPPR Exit
Normal
mode
Don’t Care
hPPR Row Repair – WR Initiated (REF Commands NOT Allowed)
1. Issue an ACT command with failing BG and BA with the row address to be repaired.
2. Issue a WR command with BG and BA of failing row address.
a. The address must be at valid levels, but the address is Don't Care.
3. All DQ of the target DRAM should be driven LOW for 4nCK (bit 0 through bit 7)
after WL (WL = CWL + AL + PL) in order for hPPR to initiate repair.
a. Repair will be initiated to the target DRAM only if all DQ during bit 0 through
bit 7 are LOW.
b. Repair will not be initiated to the target DRAM if any DQ during bit 0 through
bit 7 is HIGH.
1. JEDEC states: All DQs of target DRAM should be LOW for 4tCK. If HIGH
is driven to all DQs of a DRAM consecutively for equal to or longer than
2tCK, then DRAM does not conduct hPPR and retains data if REF command is properly issued; if all DQs are neither LOW for 4tCK nor HIGH
for equal to or longer than 2tCK, then hPPR mode execution is unknown.
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135
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8Gb: x8, x16 Automotive DDR4 SDRAM
Hard Post Package Repair
c. DQS should function normally.
4. REF commands may NOT be issued at anytime while in PPT mode.
5. Issue PRE after tPGM time so that the device can repair the target row during tPGM
time.
a. Wait tPGM_Exit after PRE to allow the device to recognize the repaired target
row address.
6. Issue MR4[13] 0 command to hPPR mode disable.
a. Wait tPGMPST for hPPR mode exit to complete.
b. After tPGMPST has expired, any valid command may be issued.
The entire sequence from hPPR mode enable through hPPR mode disable may be repeated if more than one repair is to be done.
After completing hPPR mode, MR0 must be re-programmed to a prehPPR mode state if
the device is to be accessed.
After hPPR mode has been exited, the DRAM controller can confirm if the target row
was repaired correctly by writing data into the target row and reading it back.
Figure 76: hPPR WR – Entry
7
7
7D
7D
7E
7E
7F
7F
7G
&0'
056
'(6
056
'(6
056
'(6
056
'(6
056
%*
9DOLG
1$
1$
1$
1$
&.BF
7G
7H
7I
7J
'(6
$&7
:5
'(6
1$
%*I
%*I
1$
&.BW
%$
9DOLG
1$
1$
1$
1$
1$
%$I
%$I
1$
$''5
9DOLG
$
1$
VW.H\
1$
QG .H\
1$
UG .H\
1$
WK .H\
1$
9DOLG
9DOLG
1$
&.(
:/ &:/
'46BW
'46BF
'4V
1RUPDO
0RGH
W 5&'
W 02'
W 02'
W 02'
W 02'
W 02'
K335(QWU\
VW*XDUG.H\9DOLGDWH
QG *XDUG.H\9DOLGDWH
UG *XDUG.H\9DOLGDWH
WK *XDUG.H\9DOLGDWH
$OO%DQNV
3UHFKDUJHG
DQGLGOHVWDWH
K3355HSDLU
'RQ¶W&DUH
Figure 77: hPPR WR – Repair and Exit
Te0
Tf0
CMD
ACT
BG
BGf
BA
ADDR
CK_c
Tg0
Tg1
Th0
Th1
Tj0
Tj1
Tj2
WR
DES
DES
DES
BGf
N/A
N/A
N/A
BAf
BAf
N/A
N/A
Valid
Valid
N/A
N/A
Tk0
DES
DES
DES
DES
PRE
N/A
N/A
N/A
N/A
Valid
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
Tk1
Tm0
Tm1
Tn0
DES
MRSx
DES
Valid
N/A
Valid
N/A
Valid
Valid
N/A
Valid
N/A
Valid
Valid
N/A
Valid
(A13 = 0)
N/A
Valid
CK_t
CKE
WL = CWL + AL + PL
4nCK
DQS_t
DQS_c
DQs1
bit 0
All Banks
Precharged
and idle state
bit 1
bit 6
bit 7
tPGM
tRCD
hPPR Repair
tPGM_Exit
hPPR Repair
hPPR Repair
hPPR Recognition
tPGMPST
hPPR Exit
Normal
mode
Don’t Care
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136
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8Gb: x8, x16 Automotive DDR4 SDRAM
sPPR Row Repair
Table 42: DDR4 hPPR Timing Parameters DDR4-1600 through DDR4-3200
Parameter
Symbol
tPGM
hPPR programming time
hPPR precharge exit time
hPPR exit time
Min
Max
Unit
×4, ×8
1000
–
ms
×16
2000
–
ms
tPGM_Exit
15
–
ns
tPGMPST
50
–
μs
sPPR Row Repair
Soft post package repair (sPPR) is a way to quickly, but temporarily, repair a row element in a bank on a DRAM device, where hPPR takes longer but permanently repairs a
row element. sPPR mode is entered in a similar fashion as hPPR, sPPR uses MR4[5]
while hPPR uses MR4[13]. sPPR is disabled with MR4[5] = 0, which is the normal state,
and sPPR is enabled with MR4[5] = 1, which is the sPPR enabled state.
sPPR requires the same guard key sequence as hPPR to qualify the MR4 PPR entry. After
sPPR entry, an ACT command will capture the target bank and target row, herein seed
row, where the row repair will be made. After tRCD time, a WR command is used to select the individual DRAM, through the DQ bits, to transfer the repair address into an internal register in the DRAM. After a write recovery time and PRE command, the sPPR
mode can be exited and normal operation can resume.
The DRAM will retain the soft repair information as long as V DD remains within the operating region unless rewritten by a subsequent sPPR entry to the same bank. If DRAM
power is removed or the DRAM is reset, the soft repair will revert to the unrepaired
state. hPPR and sPPR should not be enabled at the same time; Micron sPPR does not
have to be disabled and cleared prior to entering hPPR mode, but sPPR must be disabled and cleared prior to entering MBIST-PPR mode.
With sPPR, Micron DDR4 can repair one row per bank. When a subsequent sPPR request is made to the same bank, the subsequently issued sPPR address will replace the
previous sPPR address. When the hPPR resource for a bank is used up, the bank should
be assumed to not have available resources for sPPR. If a repair sequence is issued to a
bank with no repair resource available, the DRAM will ignore the programming sequence.
The bank receiving sPPR change is expected to retain memory array data in all rows except for the seed row and its associated row addresses. If the data in the memory array
in the bank under sPPR repair is not required to be retained, then the handling of the
seed row’s associated row addresses is not of interest and can be ignored. If the data in
the memory array is required to be retained in the bank under sPPR mode, then prior to
executing the sPPR mode, the seed row and its associated row addresses should be
backed up and subsequently restored after sPPR has been completed. sPPR associated
seed row addresses are specified in the Table below; BA0 is not required by Micron
DRAMs however it is JEDEC reserved.
Table 43: sPPR Associated Rows
sPPR Associated Row Address
BA0*
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A17
A16
137
A15
A14
A13
A1
A0
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8Gb: x8, x16 Automotive DDR4 SDRAM
sPPR Row Repair
All banks must be precharged and idle. DBI and CRC modes must be disabled, and all
sPPR timings must be followed as shown in the timing diagram that follows.
All other commands except those listed in the following sequences are illegal.
1. Issue MR4[5] 1 to enter sPPR mode enable.
a. All DQ are driven HIGH.
2. Issue four consecutive guard key commands (shown in the table below) to MR0
with each command separated by tMOD. Please note that JEDEC recently added
the four guard key entry used for hPPR to sPPR entry; early DRAMs may not require four guard key entry code. A prudent controller design should accommodate
either option in case an earlier DRAM is used.
a. Any interruption of the key sequence by other commands, such as ACT, WR,
RD, PRE, REF, ZQ, and NOP, are not allowed.
b. If the guard key bits are not entered in the required order or interrupted with
other MR commands, sPPR will not be enabled, and the programming cycle
will result in a NOP.
c. When the sPPR entry sequence is interrupted and followed by ACT and WR
commands, these commands will be conducted as normal DRAM commands.
d. JEDEC allows A6:0 to be "Don't Care" on 4Gb and 8Gb devices from a supplier perspective and the user should rely on vendor datasheet.
Table 44: PPR MR0 Guard Key Settings
MR0
BG1:0
BA1:0
A17:12
A11
A10
A9
A8
A7
A6:0
First guard key
0
0
xxxxxx
1
1
0
0
1
1111111
Second guard key
0
0
xxxxxx
0
1
1
1
1
1111111
Third guard key
0
0
xxxxxx
1
0
1
1
1
1111111
Fourth guard key
0
0
xxxxxx
0
0
1
1
1
1111111
3. After tMOD, issue an ACT command with failing BG and BA with the row address
to be repaired.
4. After tRCD, issue a WR command with BG and BA of failing row address.
a. The address must be at valid levels, but the address is a "Don't Care."
5. All DQ of the target DRAM should be driven LOW for 4nCK (bit 0 through bit 7)
after WL (WL = CWL + AL + PL) in order for sPPR to initiate repair.
a. Repair will be initiated to the target DRAM only if all DQ during bit 0 through
bit 7 are LOW.
b. Repair will not be initiated to the target DRAM if any DQ during bit 0 through
bit 7 is HIGH.
1. JEDEC states: All DQs of target DRAM should be LOW for 4tCK. If HIGH
is driven to all DQs of a DRAM consecutively for equal to or longer than
the first 2tCK, then DRAM does not conduct hPPR and retains data if
REF command is properly issued; if all DQs are neither LOW for 4tCK
nor HIGH for equal to or longer than the first 2tCK, then hPPR mode execution is unknown.
c. DQS should function normally.
6. REF command may NOT be issued at anytime while in sPPR mode.
7. Issue PRE after tWR time so that the device can repair the target row during tWR
time.
a. Wait tPGM_Exit_s after PRE to allow the device to recognize the repaired target row address.
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8Gb: x8, x16 Automotive DDR4 SDRAM
sPPR Row Repair
8. Issue MR4[5] 0 command to sPPR mode disable.
a. Wait tPGMPST_s for sPPR mode exit to complete.
b. After tPGMPST_s has expired, any valid command may be issued.
The entire sequence from sPPR mode enable through sPPR mode disable may be repeated if more than one repair is to be done.
After sPPR mode has been exited, the DRAM controller can confirm if the target row
was repaired correctly by writing data into the target row and reading it back.
Figure 78: sPPR – Entry
7
7
7D
7D
7E
7E
7F
7F
7G
&0'
056
'(6
056
'(6
056
'(6
056
'(6
056
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9DOLG
1$
1$
1$
1$
%$
9DOLG
1$
1$
1$
1$
$''5
9DOLG
$
1$
VW.H\
1$
QG .H\
1$
UG .H\
1$
&.BF
7G
7H
7I
7J
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:5
1$
%*I
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1$
1$
%$I
%$I
1$
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9DOLG
9DOLG
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Figure 79: sPPR – Repair, and Exit
Te0
Tf0
CMD
ACT
BG
BGf
BA
ADDR
CK_c
Tg0
Tg1
Th0
Th1
Tj0
Tj1
Tj2
Tk0
WR
DES
DES
DES
DES
DES
DES
DES
PRE
BGf
N/A
N/A
N/A
N/A
N/A
N/A
N/A
Valid
BAf
BAf
N/A
N/A
N/A
N/A
N/A
N/A
N/A
Valid
Valid
Valid
N/A
N/A
N/A
N/A
N/A
N/A
N/A
Valid
Tk1
Tm0
Tm1
Tn0
DES
MRS4
DES
Valid
N/A
Valid
N/A
Valid
N/A
Valid
N/A
Valid
N/A
Valid
(A5=0)
N/A
Valid
CK_t
CKE
WL = CWL + AL + PL
tWR
4nCK
DQS_t
DQS_c
DQs1
bit 0
All Banks
Precharged
and idle state
bit 1
bit 6
bit 7
tPGM_s
tRCD
sPPR Repair
sPPR Repair
tPGM_Exit_s
sPPR Repair
tPGMPST_s
sPPR Recognition
sPPR Repair
Normal
Mode
sPPR Exit
Don’t Care
Table 45: DDR4 sPPR Timing Parameters DDR4-1600 through DDR4-3200
Parameter
Symbol
Min
Max
Unit
RCD(MIN)+ WL + 4nCK
+ tWR(MIN)
–
ns
tPGM_Exit_s
20
–
ns
tPGMPST_s
tMOD
–
ns
sPPR programming time
tPGM_s
sPPR precharge exit time
sPPR exit time
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t
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MBIST-PPR
MBIST-PPR
DDR4 devices can support optional memory built-in self-test post-package repair
(MBIST-PPR) to help with hard failures such as single-bit or multi-bit failures in a single
device so that weak cells can be scanned and repaired during the initialization phase.
The DRAM will use vendor-specific patterns to investigate the status of all cell arrays
and automatically perform PPR for weak bits during this operation. This operation introduces proactive, automated PPR by the DRAM, and it is recommended to be done for
a very first boot-up at least. After that, it is at the controller’s discretion whether to activate MBIST. MBIST mode can only be entered from the all banks idle state. The DLL is
required to be enabled and locked prior to MBIST-PPR execution.
MBIST-PPR resources are separated from normal hPPR/sPPR resources. MBIST-PPR resources are typically used for initial scan and repair, and hPPR/sPPR resources must still
satisfy the number of repair elements, one per BG, specified in the DDR4 Bank Group
Timing Examples Table 70 (page 190). Once the MBIST-PPR is completed, the DRAM
will update the status flag in MPR3[7] of MPR page 3. Detailed status is described in the
MPR Page and MPRx Definitions Table 30 (page 90).
The test time of MBIST-PPR will not exceed 10 seconds for all mono-die DRAM densities. For DDP devices, test time will be 20 seconds.
The controller is required to inject an MRS command to enter this operation. The controller sets MR4:A0 to 1, followed by MR0 commands for the guard key. Then the DRAM
enters MBIST-PPR operation. The ALERT_n signal notifies the host of the status of this
operation. When the controller sets MR4:A0 to 1, followed by the MR0 guard key sequence, the DRAM drives ALERT_n to 0. Once the MBIST-PPR is completed, the DRAM
drives ALERT_n to 1 to notify the controller that this operation is completed. DRAM data will not be guaranteed after the MBIST-PPR operation.
Table 46: MBIST-PPR Timing Parameter
Value
Parameter
tSELFHEAL
Min
Max
Unit
s
Monolithic
–
10
DDP
–
20
MBIST-PPR Procedure
The following sequences are required for MBIST-PPR and are shown in the figure below.
1. The DRAM needs to finalize initialization, MR training, and ZQ calibration prior to
entering MBIST-PPR.
2. Four consecutive guard key commands must be issued to MR0, with each command separated by tMOD. The PPR guard key settings are the same whether performing sPPR, hPPR, or MBIST-PPR mode.
3. Anytime after Tk in the Read Termination Disable Window Figure 14 (page 40), the
host must set MR4:A0 to 1, followed by subsequent MR0 guard key sequences
(which is identical to typical hPPR/sPPR guard key sequences and specified in Table 73) to start MBIST-PPR operation, and the DRAM drives the ALERT_n signal to
0.
4. During MBIST-PPR mode, only DESELECT commands are allowed.
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8Gb: x8, x16 Automotive DDR4 SDRAM
MBIST-PPR
5. The ODT pin must be driven LOW during MBIST-PPR to satisfy DODTLoff from
time Tb0 until Tc2. The DRAM may or may not provide RTT_PARK termination
during MBIST-PPR regardless of whether RTT_PARK is enabled in MR5.
Figure 80: MBIST-PPR Sequence
7
7
7D
7D
7E
7E
7E
&0'
056
'(6
056
'(6
'(6
9DOLG
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9DOLG
1$
1$
1$
9DOLG
1$
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9DOLG
1$
1$
1$
9DOLG
1$
$''5
9DOLG
$
1$
WK .H\
1$
1$
9DOLG
1$
&.BF
&.BW
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W ,6
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[ W 02'
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$OO%DQNV
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1RUPDO
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0%,67335
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Table 47: MPR Page3 Configuration for MBIST-PPR
Address
MPR Location
[7]
[6]
[5]
[4]
[3]
[2]
[1]
[0]
Note
BA[1:0]
00 = MPR0
DC
DC
DC
DC
DC
DC
DC
DC
01 = MPR1
DC
DC
DC
DC
DC
DC
DC
DC
Readonly
DC
10 = MPR2
DC
DC
DC
11 = MPR3
MBISTPPR
Support
DC
MBIST-PPR
Transparency
MPR Location
Address Bit
Function
11 = MPR3
7
MBIST-PPR Support
DC
DC
DC
DC
MAC
MAC
MAC
MAC
Data
Notes
0: Don't Support
1: Support
00B: MBIST-PPR hasn't run since init OR no fails found
during most recent MBIST-PPR
11 = MPR3
5:4
MBIST-PPR
Transparency
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1, 2
01B: Repaired all found fails during most recent run
1
10B: Unrepairable fails found during most recent run
1
11B: MBIST-PPR should be run again
Notes:
1
1, 3
1. MPR bits are cleared either by a power-up sequence or re-initialization by RESET_n signal
141
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hPPR/sPPR/MBIST-PPR Support Identifier
2. The host should track whether MBIST-PPR has run since INIT. If MBIST-PPR is performed
and it finds no fails, this transparency state will remain set to 00B
3. This state does not imply that MBIST-PPR is required to run again. This implies that additional repairable fails were found during the most recent MBIST-PPR beyond what could
be repaired in the tSELFHEAL window.
hPPR/sPPR/MBIST-PPR Support Identifier
Table 48: DDR4 Repair Mode Support Identifier
MPR Page 2
MPR0
MPR Page 3
MPR3
A7
A6
A5
A4
A3
A2
A1
A0
UI0
UI1
UI2
UI3
UI4
UI5
UI6
UI7
hPPR1
sPPR2
RTT_WR
A7
A6
A5
A4
A3
A2
A1
A0
UI0
UI1
UI2
UI3
UI4
UI5
UI6
UI7
MAC
MAC
MAC
MAC
MBIST-PPR
Support3
Notes:
1.
2.
3.
4.
Temp sensor
Don't Care MBIST-PPR Transparency
CRC
RTT_WR
0 = hPPR mode is not available, 1 = hPPR mode is available.
0 = sPPR mode is not available, 1 = sPPR mode is available.
0 = MBIST-PPR mode is not available, 1 = MBIST-PPR mode is available.
Gray shaded areas are for reference only.
ACTIVATE Command
The ACTIVATE command is used to open (activate) a row in a particular bank for subsequent access. The values on the BG[1:0] inputs select the bank group, the BA[1:0] inputs
select the bank within the bank group, and the address provided on inputs A[17:0] selects the row within the bank. This row remains active (open) for accesses until a PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same bank. Bank-to-bank command timing for ACTIVATE commands uses two different timing parameters, depending on whether the
banks are in the same or different bank group. tRRD_S (short) is used for timing between banks located in different bank groups. tRRD_L (long) is used for timing between
banks located in the same bank group. Another timing restriction for consecutive ACTIVATE commands [issued at tRRD (MIN)] is tFAW (four activate window). Because there
is a maximum of four banks in a bank group, the tFAW parameter applies across different bank groups (five ACTIVATE commands issued at tRRD_L (MIN) to the same bank
group would be limited by tRC).
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PRECHARGE Command
Figure 81: tRRD Timing
CK_c
CK_t
Command
T0
T1
ACT
DES
T2
T3
T4
T5
T6
DES
DES
ACT
DES
DES
T8
T9
T10
T11
DES
DES
DES
ACT
DES
tRRD_L
tRRD_S
Bank
Group
(BG)
T7
BG a
BG b
BG b
Bank
Bank c
Bank c
Bank d
Address
Row n
Row n
Row n
Don’t Care
Notes:
1. tRRD_S; ACTIVATE-to-ACTIVATE command period (short); applies to consecutive ACTIVATE commands to different bank groups (that is, T0 and T4).
2. tRRD_L; ACTIVATE-to-ACTIVATE command period (long); applies to consecutive ACTIVATE commands to the different banks in the same bank group (that is, T4 and T10).
Figure 82: tFAW Timing
CK_c
CK_t
Command
T0
ACT
Ta0
Valid
ACT
tRRD
Tb0
Valid
ACT
tRRD
Valid
Tc0
Tc1
Tc2
ACT
Valid
Valid
tRRD
Valid
Td0
Td1
ACT
NOP
tFAW
Bank
Group
(BG)
Valid
Valid
Valid
Valid
Valid
Bank
Valid
Valid
Valid
Valid
Valid
Address
Valid
Valid
Valid
Valid
Valid
Don’t Care
Note:
Time Break
1. tFAW; four activate windows.
PRECHARGE Command
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row activation
for a specified time (tRP) after the PRECHARGE command is issued. An exception to
this is the case of concurrent auto precharge, where a READ or WRITE command to a
different bank is allowed as long as it does not interrupt the data transfer in the current
bank and does not violate any other timing parameters.
After a bank is precharged, it is in the idle state and must be activated prior to any READ
or WRITE commands being issued to that bank. A PRECHARGE command is allowed if
there is no open row in that bank (idle state) or if the previously open row is already in
the process of precharging. However, the precharge period will be determined by the
last PRECHARGE command issued to the bank.
The auto precharge feature is engaged when a READ or WRITE command is issued with
A10 HIGH. The auto precharge feature uses the RAS lockout circuit to internally delay
the PRECHARGE operation until the ARRAY RESTORE operation has completed. The
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REFRESH Command
RAS lockout circuit feature allows the PRECHARGE operation to be partially or completely hidden during burst READ cycles when the auto precharge feature is engaged.
The PRECHARGE operation will not begin until after the last data of the burst write sequence is properly stored in the memory array.
REFRESH Command
The REFRESH command (REF) is used during normal operation of the device. This
command is nonpersistent, so it must be issued each time a refresh is required. The device requires REFRESH cycles at an average periodic interval of tREFI. When CS_n,
RAS_n/A16, and CAS_n/A15 are held LOW and WE_n/A14 HIGH at the rising edge of
the clock, the device enters a REFRESH cycle. All banks of the SDRAM must be precharged and idle for a minimum of the precharge time, tRP (MIN), before the REFRESH
command can be applied. The refresh addressing is generated by the internal DRAM refresh controller. This makes the address bits “Don’t Care” during a REFRESH command.
An internal address counter supplies the addresses during the REFRESH cycle. No control of the external address bus is required once this cycle has started. When the REFRESH cycle has completed, all banks of the SDRAM will be in the precharged (idle)
state. A delay between the REFRESH command and the next valid command, except
DES, must be greater than or equal to the minimum REFRESH cycle time tRFC (MIN),
as shown in Figure 83 (page 145).
Note: The tRFC timing parameter depends on memory density.
In general, a REFRESH command needs to be issued to the device regularly every tREFI
interval. To allow for improved efficiency in scheduling and switching between tasks,
some flexibility in the absolute refresh interval is provided for postponing and pullingin the REFRESH command. A limited number REFRESH commands can be postponed
depending on refresh mode: a maximum of 8 REFRESH commands can be postponed
when the device is in 1X refresh mode; a maximum of 16 REFRESH commands can be
postponed when the device is in 2X refresh mode; and a maximum of 32 REFRESH
commands can be postponed when the device is in 4X refresh mode.
When 8 consecutive REFRESH commands are postponed, the resulting maximum interval between the surrounding REFRESH commands is limited to 9 × tREFI (see Figure 84
(page 145)). For both the 2X and 4X refresh modes, the maximum interval between surrounding REFRESH commands allowed is limited to 17 × tREFI2 and 33 × tREFI4, respectively.
A limited number REFRESH commands can be pulled-in as well. A maximum of 8 additional REFRESH commands can be issued in advance or “pulled-in” in 1X refresh mode,
a maximum of 16 additional REFRESH commands can be issued when in advance in 2X
refresh mode, and a maximum of 32 additional REFRESH commands can be issued in
advance when in 4X refresh mode. Each of these REFRESH commands reduces the
number of regular REFRESH commands required later by one. The resulting maximum
interval between two surrounding REFRESH commands is limited to 9 × tREFI (Figure 85 (page 145)), 17 × tRFEI2, or 33 × tREFI4. At any given time, a maximum of 16 REF
commands can be issued within 2 × tREFI, 32 REF2 commands can be issued within 4 ×
tREFI2, and 64 REF4 commands can be issued within 8 × tREFI4 (larger densities are
limited by tRFC1, tRFC2, and tRFC4, respectively, which must still be met).
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REFRESH Command
Figure 83: REFRESH Command Timing
CK_c
T0
T1
REF
DES
Ta0
Ta1
Tb0
Tb1
Tb2
Tb3
Valid
Valid
Valid
Valid
Tc0
Tc1
Tc2
Tc3
REF
Valid
Valid
Valid
CK_t
Command
DES
REF
tRFC
DES
DES
tRFC
Valid
(MIN)
tREFI
(MAX 9 × tREFI)
DRAM must be idle
DRAM must be idle
Time Break
Notes:
Don’t Care
1. Only DES commands are allowed after a REFRESH command is registered until tRFC
(MIN) expires.
2. Time interval between two REFRESH commands may be extended to a maximum of 9 ×
tREFI.
Figure 84: Postponing REFRESH Commands (Example)
tREFI
9 × tREFI
W
tRFC
8 REF-Commands postponed
Figure 85: Pulling In REFRESH Commands (Example)
9 × tREFI
tREFI
W
tRFC
8 REF-Commands pulled-in
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Temperature-Controlled Refresh Mode
Temperature-Controlled Refresh Mode
During normal operation, temperature-controlled refresh (TCR) mode disabled, the device must have a REFRESH command issued once every tREFI, except for what is allowed by posting (see REFRESH Command section). This means a REFRESH command
must be issued once every 0.975μs if T C is greater than 105°C, once every 1.95μs if T C is
greater than 95°C, once every 3.9μs if T C is greater than 85°C, and once every 7.8μs if T C
is less than or equal to 85°C, regardless of which Temperature Mode is selected
(MR4[2]). TCR mode is disabled by setting MR4[3] = 0 while TCR mode is enabled by
setting MR4[3] = 1. When TCR mode is enabled (MR4[3] = 1), the Temperature Mode
must be selected where MR4[2] = 0 enables the Normal Temperature Mode while
MR4[2] = 1 enables the Extended Temperature Mode.
When TCR mode is enabled, the device will register the externally supplied REFRESH
command and adjust the internal refresh period to be longer than tREFI of the normal
temperature range, when allowed, by skipping REFRESH commands with the proper
gear ratio. TCR mode has two Temperature Modes to select between the normal temperature range and the extended temperature range; the correct Temperature Mode
must be selected so the internal control operates correctly. The DRAM must have the
correct refresh rate applied externally; the internal refresh rate is determined by the
DRAM based upon the temperature.
Normal Temperature Mode
REFRESH commands should be issued to the device with the refresh period equal to
of normal temperature range (–40°C to 85°C). The system must guarantee that the
TC does not exceed 85°C when tREFI of the normal temperature range is used. The device may adjust the internal refresh period to be longer than tREFI of the normal temperature range by skipping external REFRESH commands with the proper gear ratio
when T C is below 85°C. The internal refresh period is automatically adjusted inside the
DRAM, and the DRAM controller does not need to provide any additional control.
tREFI
Extended Temperature Mode
REFRESH commands should be issued to the device with the refresh period equal to
of extended temperature range (85°C to 125°C). The system must guarantee that
the T C does not exceed 125°C. Even though the external refresh supports the extended
temperature range, the device may adjust its internal refresh period to be equal to or
longer than tREFI of the normal temperature range (–40°C to 85°C) by skipping external
REFRESH commands with the proper gear ratio when T C is equal to or below 85°C. The
internal refresh period is automatically adjusted inside the DRAM, and the DRAM controller does not need to provide any additional control.
tREFI
Table 49: Normal tREFI Refresh (TCR Enabled)
Normal Temperature Mode
Temperature
External Refresh
Period
TC ≤ 85°C
7.8μs
Internal Refresh
Period
≥7.8μs
85°C < TC ≤ 95°C
N/A
95°C < TC ≤105°C
N/A
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Extended Temperature Mode
External Refresh
Period
3.9μs1
1.95μs
146
Internal Refresh
Period
≥7.8μs
3.9μs
1.95μs
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8Gb: x8, x16 Automotive DDR4 SDRAM
Temperature-Controlled Refresh Mode
Table 49: Normal tREFI Refresh (TCR Enabled) (Continued)
Normal Temperature Mode
External Refresh
Period
Temperature
105°C < TC ≤ 125°C
Internal Refresh
Period
N/A
Note:
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Extended Temperature Mode
External Refresh
Period
Internal Refresh
Period
0.975μs
0.975μs
1. If the external refresh period is slower than 3.9μs, the device will refresh internally at
too slow of a refresh rate and will violate refresh specifications.
147
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8Gb: x8, x16 Automotive DDR4 SDRAM
Temperature-Controlled Refresh Mode
Figure 86: TCR Mode Example1
Controller
External
tREFI
3.9μs
REFRESH
REFRESH
85°C TC 95°C
TC 85°C
REFRESH
REFRESH
Internal
tREFI
3.9μs
REFRESH
Internal
tREFI
7.8μs
REFRESH
REFRESH
REFRESH
REFRESH
REFRESH
REFRESH
REFRESH
REFRESH
REFRESH
REFRESH
REFRESH
Controller issues REFRESH
commands at extended
temperature rate
External REFRESH
commands are not
ignored
At least every other
external REFRESH
ignored
Note:
CCMTD-1406124318-10419
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REFRESH
REFRESH
1. TCR enabled with Extended Temperature Mode selected.
148
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8Gb: x8, x16 Automotive DDR4 SDRAM
Fine Granularity Refresh Mode
Fine Granularity Refresh Mode
Mode Register and Command Truth Table
The REFRESH cycle time (tRFC) and the average refresh interval (tREFI) can be programmed by the MRS command. The appropriate setting in the mode register will set a
single set of REFRESH cycle times and average refresh interval for the device (fixed
mode), or allow the dynamic selection of one of two sets of REFRESH cycle times and
average refresh interval for the device (on-the-fly mode [OTF]). OTF mode must be enabled by MRS before any OTF REFRESH command can be issued.
Table 50: MRS Definition
MR3[8]
MR3[7]
MR3[6]
Refresh Rate Mode
0
0
0
Normal mode (fixed 1x)
0
0
1
Fixed 2x
0
1
0
Fixed 4x
0
1
1
Reserved
1
0
0
Reserved
1
0
1
On-the-fly 1x/2x
1
1
0
On-the-fly 1x/4x
1
1
1
Reserved
There are two types of OTF modes (1x/2x and 1x/4x modes) that are selectable by programming the appropriate values into the mode register. When either of the two OTF
modes is selected, the device evaluates the BG0 bit when a REFRESH command is issued, and depending on the status of BG0, it dynamically switches its internal refresh
configuration between 1x and 2x (or 1x and 4x) modes, and then executes the corresponding REFRESH operation.
Table 51: REFRESH Command Truth Table
Refresh
RAS_n/A CAS_n/A
15
14
WE_n/
A13
BG1
BG0
A10/
AP
A[9:0],
A[12:11],
A[20:16]
MR3[8:6
]
CS_n
ACT_n
Fixed rate
L
H
L
L
H
V
V
V
V
0vv
OTF: 1x
L
H
L
L
H
V
L
V
V
1vv
OTF: 2x
L
H
L
L
H
V
H
V
V
101
OTF: 4x
L
H
L
L
H
V
H
V
V
110
tREFI
and tRFC Parameters
The default refresh rate mode is fixed 1x mode where REFRESH commands should be
issued with the normal rate; that is, tREFI1 = tREFI(base) (for T C ≤ 85°C), and the duration of each REFRESH command is the normal REFRESH cycle time (tRFC1). In 2x
mode (either fixed 2x or OTF 2x mode), REFRESH commands should be issued to the
device at the double frequency (tREFI2 = tREFI(base)/2) of the normal refresh rate. In 4x
mode, the REFRESH command rate should be quadrupled (tREFI4 = tREFI(base)/4). Per
CCMTD-1406124318-10419
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8Gb: x8, x16 Automotive DDR4 SDRAM
Fine Granularity Refresh Mode
each mode and command type, the tRFC parameter has different values as defined in
the following table.
For discussion purposes, the REFRESH command that should be issued at the normal
refresh rate and has the normal REFRESH cycle duration may be referred to as an REF1x
command. The REFRESH command that should be issued at the double frequency
(tREFI2 = tREFI(base)/2) may be referred to as a REF2x command. Finally, the REFRESH
command that should be issued at the quadruple rate (tREFI4 = tREFI(base)/4) may be
referred to as a REF4x command.
In the fixed 1x refresh rate mode, only REF1x commands are permitted. In the fixed 2x
refresh rate mode, only REF2x commands are permitted. In the fixed 4x refresh rate
mode, only REF4x commands are permitted. When the on-the-fly 1x/2x refresh rate
mode is enabled, both REF1x and REF2x commands are permitted. When the OTF
1x/4x refresh rate mode is enabled, both REF1x and REF4x commands are permitted.
Table 52: tREFI and tRFC Parameters
Refresh Mode Parameter
tREFI
1x mode
2Gb
(base)
tREFI1
tREFI2
7.8
7.8
μs
-40°C ≤ TC ≤ 85°C
tREFI(base)
tREFI(base)
μs
85°C ≤ TC ≤ 95°C
tREFI(base)/2
tREFI(base)/2
tREFI(base)/2
μs
95°C ≤ TC ≤ 105°C
tREFI(base)/4
tREFI(base)/4
tREFI(base)/4
μs
105°C ≤ TC ≤ 125°C
tREFI(base)/8
tREFI(base)/8
tREFI(base)/8
μs
160
260
350
ns
-40°C ≤ TC ≤ 85°C
tREFI(base)/2
tREFI(base)/2
tREFI(base)/2
μs
85°C ≤ TC ≤ 95°C
tREFI(base)/4
tREFI(base)/4
tREFI(base)/4
μs
95°C ≤ TC ≤ 105°C
tREFI(base)/8
tREFI(base)/8
tREFI(base)/8
μs
tREFI(base)/16
tREFI(base)/16
tREFI(base)/16
μs
110
160
260
ns
-40°C ≤ TC ≤ 85°C
tREFI(base)/4
tREFI(base)/4
tREFI(base)/4
μs
85°C ≤ TC ≤ 95°C
tREFI(base)/8
tREFI(base)/8
tREFI(base)/8
μs
95°C ≤ TC ≤ 105°C
tREFI(base)/16
tREFI(base)/16
tREFI(base)/16
μs
105°C ≤ TC ≤ 125°C
tREFI(base)/32
tREFI(base)/32
tREFI(base)/32
μs
90
110
160
ns
105°C ≤ TC ≤ 125°C
tREFI4
tRFC4
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Units
7.8
tRFC2
4x mode
8Gb
tREFI(base)
tRFC1
2x mode
4Gb
150
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CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Figure 87: 4Gb with Fine Granularity Refresh Mode Example
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Fine Granularity Refresh Mode
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Fine Granularity Refresh Mode
1. tREFI value is dependent on operating temperature range. See Table 52.
Note:
Changing Refresh Rate
If the refresh rate is changed by either MRS or OTF. New tREFI and tRFC parameters will
be applied from the moment of the rate change. When the REF1x command is issued to
the DRAM, tREF1 and tRFC1 are applied from the time that the command was issued;
when the REF2x command is issued, tREF2 and tRFC2 should be satisfied.
Figure 88: OTF REFRESH Command Timing
CK_c
CK_t
Command
DES
REF1
DES
DES
tRFC1
DES
Valid
Valid
REF2
DES
tRFC2
(MIN)
tREFI1
DES
Valid
DES
REF2
DES
(MIN)
tREFI2
Don’t Care
The following conditions must be satisfied before the refresh rate can be changed. Otherwise, data retention cannot be guaranteed.
• In the fixed 2x refresh rate mode or the OTF 1x/2x refresh mode, an even number of
REF2x commands must be issued because the last change of the refresh rate mode
with an MRS command before the refresh rate can be changed by another MRS command.
• In the OTF1x/2x refresh rate mode, an even number of REF2x commands must be issued between any two REF1x commands.
• In the fixed 4x refresh rate mode or the OTF 1x/4x refresh mode, a multiple-of-four
number of REF4x commands must be issued because the last change of the refresh
rate with an MRS command before the refresh rate can be changed by another MRS
command.
• In the OTF1x/4x refresh rate mode, a multiple-of-four number of REF4x commands
must be issued between any two REF1x commands.
There are no special restrictions for the fixed 1x refresh rate mode. Switching between
fixed and OTF modes keeping the same rate is not regarded as a refresh rate change.
Usage with TCR Mode
If the temperature controlled refresh mode is enabled, only the normal mode (fixed 1x
mode, MR3[8:6] = 000) is allowed. If any other refresh mode than the normal mode is
selected, the temperature controlled refresh mode must be disabled.
Self Refresh Entry and Exit
The device can enter self refresh mode anytime in 1x, 2x, and 4x mode without any restriction on the number of REFRESH commands that have been issued during the
mode before the self refresh entry. However, upon self refresh exit, extra REFRESH command(s) may be required, depending on the condition of the self refresh entry.
The conditions and requirements for the extra REFRESH command(s) are defined as
follows:
CCMTD-1406124318-10419
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8Gb: x8, x16 Automotive DDR4 SDRAM
Fine Granularity Refresh Mode
• In the fixed 2x refresh rate mode or the enable-OTF 1x/2x refresh rate mode, it is recommended there be an even number of REF2x commands before entry into self refresh after the last self refresh exit, REF1x command, or MRS command that set the
refresh mode. If this condition is met, no additional REFRESH commands are required upon self refresh exit. In the case that this condition is not met, either one extra REF1x command or two extra REF2x commands must be issued upon self refresh
exit. These extra REFRESH commands are not counted toward the computation of the
average refresh interval (tREFI).
• In the fixed 4x refresh rate mode or the enable-OTF 1x/4x refresh rate mode, it is recommended there be a multiple-of-four number of REF4x commands before entry into self refresh after the last self refresh exit, REF1x command, or MRS command that
set the refresh mode. If this condition is met, no additional refresh commands are required upon self refresh exit. When this condition is not met, either one extra REF1x
command or four extra REF4x commands must be issued upon self refresh exit. These
extra REFRESH commands are not counted toward the computation of the average
refresh interval (tREFI).
There are no special restrictions on the fixed 1x refresh rate mode.
This section does not change the requirement regarding postponed REFRESH commands. The requirement for the additional REFRESH command(s) described above is
independent of the requirement for the postponed REFRESH commands.
CCMTD-1406124318-10419
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8Gb: x8, x16 Automotive DDR4 SDRAM
SELF REFRESH Operation
SELF REFRESH Operation
The SELF REFRESH command can be used to retain data in the device, even if the rest
of the system is powered down. When in self refresh mode, the device retains data without external clocking. The device has a built-in timer to accommodate SELF REFRESH
operation. The SELF REFRESH command is defined by having CS_n, RAS_n, CAS_n,
and CKE held LOW with WE_n and ACT_n HIGH at the rising edge of the clock.
Before issuing the SELF REFRESH ENTRY command, the device must be idle with all
banks in the precharge state and tRP satisfied. Idle state is defined as: All banks are
closed (tRP, tDAL, and so on, satisfied), no data bursts are in progress, CKE is HIGH, and
all timings from previous operations are satisfied (tMRD, tMOD, tRFC, tZQinit, tZQoper,
tZQCS, and so on). After the SELF REFRESH ENTRY command is registered, CKE must
be held LOW to keep the device in self refresh mode. The DRAM automatically disables
ODT termination, regardless of the ODT pin, when it enters self refresh mode and automatically enables ODT upon exiting self refresh. During normal operation (DLL_on),
the DLL is automatically disabled upon entering self refresh and is automatically enabled (including a DLL reset) upon exiting self refresh.
When the device has entered self refresh mode, all of the external control signals, except
CKE and RESET_n, are “Don’t Care.” For proper SELF REFRESH operation, all power
supply and reference pins (VDD, V DDQ, V SS, V SSQ, V PP, and V REFCA) must be at valid levels.
The DRAM internal V REFDQ generator circuitry may remain on or be turned off depending on the MR6 bit 7 setting. If the internal V REFDQ circuit is on in self refresh, the first
WRITE operation or first write-leveling activity may occur after tXS time after self refresh exit. If the DRAM internal V REFDQ circuitry is turned off in self refresh, it ensures
that the V REFDQ generator circuitry is powered up and stable within the tXSDLL period
when the DRAM exits the self refresh state. The first WRITE operation or first write-leveling activity may not occur earlier than tXSDLL after exiting self refresh. The device initiates a minimum of one REFRESH command internally within the tCKE period once it
enters self refresh mode.
The clock is internally disabled during a SELF REFRESH operation to save power. The
minimum time that the device must remain in self refresh mode is tCKESR/
tCKESR_PAR. The user may change the external clock frequency or halt the external
clock tCKSRE/tCKSRE_PAR after self refresh entry is registered; however, the clock must
be restarted and tCKSRX must be stable before the device can exit SELF REFRESH operation.
The procedure for exiting self refresh requires a sequence of events. First, the clock must
be stable prior to CKE going back HIGH. Once a SELF REFRESH EXIT command (SRX,
combination of CKE going HIGH and DESELECT on the command bus) is registered,
the following timing delay must be satisfied:
Commands that do not require locked DLL:
• tXS = ACT, PRE, PREA, REF, SRE, and PDE.
• tXS_FAST = ZQCL, ZQCS, and MRS commands. For an MRS command, only DRAM
CL, WR/RTP register, and DLL reset in MR0; R TT(NOM) register in MR1; the CWL and
RTT(WR) registers in MR2; and gear-down mode register in MR3; WRITE and READ preamble registers in MR4; RTT(PARK) register in MR5; Data rate and V REFDQ calibration
value registers in MR6 may be accessed provided the DRAM is not in per-DRAM
mode. Access to other DRAM mode registers must satisfy tXS timing. WRITE commands (WR, WRS4, WRS8, WRA, WRAS4, and WRAS8) that require synchronous ODT
and dynamic ODT controlled by the WRITE command require a locked DLL.
CCMTD-1406124318-10419
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8Gb: x8, x16 Automotive DDR4 SDRAM
SELF REFRESH Operation
Commands that require locked DLL in the normal operating range:
• tXSDLL – RD, RDS4, RDS8, RDA, RDAS4, and RDAS8 (unlike DDR3, WR, WRS4, WRS8,
WRA, WRAS4, and WRAS8 because synchronous ODT is required).
Depending on the system environment and the amount of time spent in self refresh, ZQ
CALIBRATION commands may be required to compensate for the voltage and temperature drift described in the ZQ CALIBRATION Commands section. To issue ZQ CALIBRATION commands, applicable timing requirements must be satisfied (see the ZQ Calibration Timing figure).
CKE must remain HIGH for the entire self refresh exit period tXSDLL for proper operation except for self refresh re-entry. Upon exit from self refresh, the device can be put
back into self refresh mode or power-down mode after waiting at least tXS period and
issuing one REFRESH command (refresh period of tRFC). The DESELECT command
must be registered on each positive clock edge during the self refresh exit interval tXS.
ODT must be turned off during tXSDLL.
The use of self refresh mode introduces the possibility that an internally timed refresh
event can be missed when CKE is raised for exit from self refresh mode. Upon exit from
self refresh, the device requires a minimum of one extra REFRESH command before it is
put back into self refresh mode.
Figure 89: Self Refresh Entry/Exit Timing
T0
T1
Ta0
Tb0
Tc0
Td0
Td1
Te0
Tf0
Tg0
Valid
Valid
Valid
CK_c
CK_t
tCKSRX
tCKSRE/tCKSRE_PAR
tIS
tCPDED
CKE
tCKESR/tCKESR_PAR
Valid
ODT
tXS_FAST
Command
DES
SRE
SRX
DES
ADDR
Valid 1
Valid 2
Valid 3
Valid
Valid
Valid
tXS
tRP
tXSDLL
Enter Self Refresh
Exit Self Refresh
Don’t Care
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Time Break
1. Only MRS (limited to those described in the SELF REFRESH Operation section), ZQCS, or
ZQCL commands are allowed.
2. Valid commands not requiring a locked DLL.
3. Valid commands requiring a locked DLL.
155
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8Gb: x8, x16 Automotive DDR4 SDRAM
SELF REFRESH Operation
Figure 90: Self Refresh Entry/Exit Timing with CAL Mode
7
7
7
7
7
7
7
7D
7D
7D
7D
7D 7E
7E
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Notes:
1. tCAL = 3nCK, tCPDED = 4nCK, tCKSRE/tCKSRE_PAR = 8nCK, tCKSRX = 8nCK, tXS_FAST =
tREFC4 (MIN) + 10ns.
2. CS_n = HIGH, ACT_n = "Don't Care," RAS_n/A16 = "Don't Care," CAS_n/A15 = "Don't
Care," WE_n/A14 = "Don't Care."
3. Only MRS (limited to those described in the SELF REFRESH Operations section), ZQCS, or
ZQCL commands are allowed.
4. The figure only displays tXS_FAST timing, but tCAL must also be added to any tXS and
tXSDLL associated commands during CAL mode.
Self Refresh Abort
The exit timing from self refresh exit to the first valid command not requiring a locked
DLL is tXS. The value of tXS is (tRFC1 + 10ns). This delay allows any refreshes started by
the device time to complete. tRFC continues to grow with higher density devices, so tXS
will grow as well. An MRS bit enables the self refresh abort mode. If the bit is disabled,
the controller uses tXS timings (location MR4, bit 9). If the bit is enabled, the device
aborts any ongoing refresh and does not increment the refresh counter. The controller
can issue a valid command not requiring a locked DLL after a delay of tXS_ABORT.
Upon exit from self refresh, the device requires a minimum of one extra REFRESH command before it is put back into self refresh mode. This requirement remains the same
irrespective of the setting of the MRS bit for self refresh abort.
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8Gb: x8, x16 Automotive DDR4 SDRAM
SELF REFRESH Operation
Figure 91: Self Refresh Abort
T0
T1
Ta0
Tb0
Tc0
Td0
Td1
Te0
Tf0
Tg0
Valid
Valid
Valid
CK_c
CK_t
tCKSRX
tCKSRE/tCKSRE_PAR
tIS
tCPDED
CKE
tCKESR/tCKESR_PAR
ODT
Valid
tXS_FAST
Command
DES
SRE
SRX
DES
ADDR
Valid 1
Valid 2
Valid 3
Valid
Valid
Valid
tXS_ABORT
tRP
tXSDLL
Enter Self Refresh
Exit Self Refresh
Don’t Care
Notes:
Time Break
1. Only MRS (limited to those described in the SELF REFRESH Operation section), ZQCS, or
ZQCL commands are allowed.
2. Valid commands not requiring a locked DLL with self refresh abort mode enabled in the
mode register.
3. Valid commands requiring a locked DLL.
Self Refresh Exit with NOP Command
Exiting self refresh mode using the NO OPERATION command (NOP) is allowed under a
specific system application. This special use of NOP allows for a common command/
address bus between active DRAM devices and DRAM(s) in maximum power saving
mode. Self refresh mode may exit with NOP commands provided:
• The device entered self refresh mode with CA parity, CAL, and gear-down disabled.
• tMPX_S and tMPX_LH are satisfied.
• NOP commands are only issued during tMPX_LH window.
No other command is allowed during the tMPX_LH window after an SELF REFRESH EXIT (SRX) command is issued.
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8Gb: x8, x16 Automotive DDR4 SDRAM
SELF REFRESH Operation
Figure 92: Self Refresh Exit with NOP Command
7D
7D
7D
7D
7E
7E
7E
7E
7F
7F
7F
7F
7F
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&6BQ
1RWH
1RWH
&RPPDQG
65;
123
123
123
123
$''5
9DOLG
9DOLG
9DOLG
9DOLG
9DOLG
'(6
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'(6
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9DOLG
9DOLG
W
W
'(6
9DOLG
9DOLG
;6
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Power-Down Mode
Power-Down Mode
Power-down is synchronously entered when CKE is registered LOW (along with a DESELECT command). CKE is not allowed to go LOW when the following operations are in
progress: MRS command, MPR operations, ZQCAL operations, DLL locking, or READ/
WRITE operations. CKE is allowed to go LOW while any other operations, such as ROW
ACTIVATION, PRECHARGE or auto precharge, or REFRESH, are in progress, but the
power-down IDD specification will not be applied until those operations are complete.
The timing diagrams that follow illustrate power-down entry and exit.
For the fastest power-down exit timing, the DLL should be in a locked state when power-down is entered. If the DLL is not locked during power-down entry, the DLL must be
reset after exiting power-down mode for proper READ operation and synchronous ODT
operation. DRAM design provides all AC and DC timing and voltage specification as
well as proper DLL operation with any CKE intensive operations as long as the controller complies with DRAM specifications.
During power-down, if all banks are closed after any in-progress commands are completed, the device will be in precharge power-down mode; if any bank is open after inprogress commands are completed, the device will be in active power-down mode.
Entering power-down deactivates the input and output buffers, excluding CK, CKE, and
RESET_n. In power-down mode, DRAM ODT input buffer deactivation is based on
Mode Register 5, bit 5 (MR5[5]). If it is configured to 0b, the ODT input buffer remains
on and the ODT input signal must be at valid logic level. If it is configured to 1b, the
ODT input buffer is deactivated and the DRAM ODT input signal may be floating and
the device does not provide RTT(NOM) termination. Note that the device continues to
provide RTT(Park) termination if it is enabled in MR5[8:6]. To protect internal delay on the
CKE line to block the input signals, multiple DES commands are needed during the CKE
switch off and on cycle(s); this timing period is defined as tCPDED. CKE LOW will result
in deactivation of command and address receivers after tCPDED has expired.
Table 53: Power-Down Entry Definitions
DRAM Status
DLL
PowerDown Exit
Active
(a bank or more open)
On
Fast
tXP
to any valid command.
Precharged
(all banks precharged)
On
Fast
tXP
to any valid command.
Relevant Parameters
The DLL is kept enabled during precharge power-down or active power-down. In power-down mode, CKE is LOW, RESET_n is HIGH, and a stable clock signal must be maintained at the inputs of the device. ODT should be in a valid state, but all other input signals are "Don't Care." (If RESET_n goes LOW during power-down, the device will be out
of power-down mode and in the reset state.) CKE LOW must be maintained until tCKE
has been satisfied. Power-down duration is limited by 9 × tREFI.
The power-down state is synchronously exited when CKE is registered HIGH (along
with DES command). CKE HIGH must be maintained until tCKE has been satisfied. The
ODT input signal must be at a valid level when the device exits from power-down mode,
independent of MR1 bit [10:8] if RTT(NOM) is enabled in the mode register. If RTT(NOM) is
disabled, the ODT input signal may remain floating. A valid, executable command can
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8Gb: x8, x16 Automotive DDR4 SDRAM
Power-Down Mode
be applied with power-down exit latency, tXP, after CKE goes HIGH. Power-down exit latency is defined in the AC Specifications table.
Figure 93: Active Power-Down Entry and Exit
T0
T1
T2
Valid
DES
DES
Ta0
Ta1
Tb0
Tb1
Tc0
CK_c
CK_t
Command
DES
DES
DES
Valid
Valid
Valid
tPD
tIS
tIH
CKE
tIH
tCKE
tIS
ODT (ODT buffer enabled - MR5[5] = 0)2
Refer to ODT Power-Down Entry/Exit
with ODT Buffer Disable Mode figures
ODT (ODT buffer disabled - MR5[5] = 1)3
Address
Valid
Valid
tCPDED
Enter
power-down
mode
tXP
Exit
power-down
mode
Time Break
Notes:
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Don’t Care
1. Valid commands at T0 are ACT, DES, or PRE with one bank remaining open after completion of the PRECHARGE command.
2. ODT pin driven to a valid state; MR5[5] = 0 (normal setting).
3. ODT pin drive/float timing requirements for the ODT input buffer disable option (for additional power savings during active power-down) is described in the section for ODT Input Buffer Disable Mode for Power-Down (page 167); MR5[5] = 1.
160
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8Gb: x8, x16 Automotive DDR4 SDRAM
Power-Down Mode
Figure 94: Power-Down Entry After Read and Read with Auto Precharge
CK_c
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Ta8
Tb0
Tb1
RD or
RDA
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
Valid
CK_t
Command
tIS
tCPDED
Valid
CKE
Valid
Valid
Address
RL = AL + CL
tPD
DQS_t, DQS_c
DQ BL8
DI
b
DI
b+1
DI
b+2
DI
b+3
DQ BC4
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
tRDPDEN
Power-Down
entry
Transitioning Data
Note:
Don’t Care
Time Break
1. DI n (or b) = data-in from column n (or b).
Figure 95: Power-Down Entry After Write and Write with Auto Precharge
CK_c
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Tb0
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
Tb1
Tb2
Tc0
Tc1
DES
DES
Valid
CK_t
Command
DES
tIS
tCPDED
Valid
CKE
Address
Bank,
Col n
Valid
A10
WL = AL + CWL
tPD
WR
DQS_t, DQS_c
DQ BL8
DI
b
DI
b+1
DI
b+2
DI
b+3
DQ BC4
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
Start internal
precharge
tWRAPDEN
Power-Down
entry
Transitioning Data
Notes:
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7LPH%UHDN
'RQ¶W&DUH
1. DI n (or b) = data-in from column n (or b).
2. Valid commands at T0 are ACT, DES, or PRE with one bank remaining open after completion of the PRECHARGE command.
161
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Power-Down Mode
Figure 96: Power-Down Entry After Write
CK_c
T0
T1
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Tb0
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
Tb1
Tb2
Tc0
Tc1
DES
DES
Valid
CK_t
Command
DES
tIS
tCPDED
Valid
CKE
Address
Bank,
Col n
Valid
A10
WL = AL + CWL
tPD
tWR
DQS_t, DQS_c
DQ BL8
DI
b
DI
b+1
DI
b+2
DI
b+3
DQ BC4
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
tWRPDEN
Power-Down
entry
Transitioning Data
Note:
Time Break
Don’t Care
1. DI n (or b) = data-in from column n (or b).
Figure 97: Precharge Power-Down Entry and Exit
T0
T1
T2
Ta0
Ta1
Tb0
Tb1
Tc0
DES
DES
DES
DES
DES
DES
Valid
Valid
Valid
CK_c
CK_t
Command
tCPDED
tCKE
tIS
tIH
CKE
tIS
tPD
Enter
power-down
mode
tXP
Exit
power-down
mode
Time Break
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Don’t Care
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8Gb: x8, x16 Automotive DDR4 SDRAM
Power-Down Mode
Figure 98: REFRESH Command to Power-Down Entry
T0
T1
T2
Ta0
Tb0
Tb1
REF
DES
DES
DES
DES
CK_c
CK_t
Command
Address
Valid
tCPDED
tIS
tPD
tCKE
CKE
Valid
tREFPDEN
Time Break
Don’t Care
Figure 99: Active Command to Power-Down Entry
T0
T1
T2
Ta0
Tb0
Tb1
ACT
DES
DES
DES
DES
CK_c
CK_t
Command
Address
Valid
tCPDED
tIS
tPD
tCKE
CKE
Valid
tACTPDEN
Time Break
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163
Don’t Care
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8Gb: x8, x16 Automotive DDR4 SDRAM
Power-Down Mode
Figure 100: PRECHARGE/PRECHARGE ALL Command to Power-Down Entry
T0
T1
T2
Ta0
Tb0
Tb1
PRE or
PREA
DES
DES
DES
Valid
CK_c
CK_t
Command
Address
Valid
tCPDED
tIS
tPD
tCKE
CKE
tPREPDEN
Time Break
Don’t Care
Figure 101: MRS Command to Power-Down Entry
T0
T1
Ta0
Ta1
Command
MRS
DES
DES
DES
Address
Valid
Tb0
Tb1
CK_c
CK_t
DES
tCPDED
tIS
tPD
tCKE
CKE
Valid
tMRSPDEN
Time Break
Don’t Care
Power-Down Clarifications – Case 1
When CKE is registered LOW for power-down entry, tPD (MIN) must be satisfied before
CKE can be registered HIGH for power-down exit. The minimum value of parameter
tPD (MIN) is equal to the minimum value of parameter tCKE (MIN) as shown in the
Timing Parameters by Speed Bin table. A detailed example of Case 1 follows.
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Power-Down Mode
Figure 102: Power-Down Entry/Exit Clarifications – Case 1
T0
T1
T2
Ta0
Valid
DES
DES
Tb0
Ta1
Tb1
Tb2
CK_c
CK_t
Command
DES
DES
DES
DES
tPD
tPD
tIH
tIS
tIS
CKE
tIS
tIH
Address
tCKE
Valid
tCPDED
tCPDED
Enter
power-down
mode
Exit
power-down
mode
Enter
power-down
mode
Time Break
Don’t Care
Power-Down Entry, Exit Timing with CAL
Command/Address latency is used and additional timing restrictions are required when
entering power-down, as noted in the following figures.
Figure 103: Active Power-Down Entry and Exit Timing with CAL
7
7
7D
7D
7D
'(6
'(6
9DOLG
'(6
'(6
7E
7E
7F
7F
7G
7G
7H
'(6
'(6
'(6
9DOLG
&.BF
&.BW
&6BQ
&RPPDQG
$GGUHVV
'(6
'(6
9DOLG
W &$/
9DOLG
W,+
W &3'('
W ,6
W ;3
W ,+
W 3'
W &$/
W ,6
&.(
7LPH%UHDN
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165
'RQ¶W&DUH
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8Gb: x8, x16 Automotive DDR4 SDRAM
Power-Down Mode
Figure 104: REFRESH Command to Power-Down Entry with CAL
7
7
7D
7E
7E
7F
'(6
'(6
5()
'(6
'(6
'(6
7F
7G
7G
7H
7H
7I
'(6
'(6
'(6
9DOLG
&.BF
&.BW
&6BQ
&RPPDQG
$GGUHVV
'(6
9DOLG
W &$/
9DOLG
W &3'('
W 5()3'(1
W ,6
&.(
W ;3
W 3'
W ,+
W &$/
W ,6
W,+
7LPH%UHDN
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166
'RQ¶W&DUH
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8Gb: x8, x16 Automotive DDR4 SDRAM
ODT Input Buffer Disable Mode for Power-Down
ODT Input Buffer Disable Mode for Power-Down
DRAM does not provide RTT_NOM termination during power-down when ODT input
buffer deactivation mode is enabled in MR5 bit A5.
To account for DRAM internal delay on CKE line to disable the ODT buffer and block
the sampled output, the host controller must continuously drive ODT to either low or
high when entering power down (from tDODTLoff+1 prior to CKE low till tCPDED after
CKE low).
The ODT signal is allowed to float after tCPDEDmin has expired. In this mode, RTT_NOM
termination corresponding to sampled ODT at the input when CKE is registered low
(and tANPD before that) may be either RTT_NOM or RTT_PARK. tANPD is equal to (WL-1)
and is counted backwards from PDE.
Figure 105: ODT Power-Down Entry with ODT Buffer Disable Mode
diff_CK
CKE
tDODTLoff
tCPDED
+1
(MIN)
Floating
ODT
tADC
DRAM_RTT_sync
(DLL enabled)
CA parity disabled
RTT(NOM)
DRAM_RTT_async
(DLL disabled)
RTT(NOM)
RTT(Park)
tCPDED
DODTLoff
(MIN) + tADC (MAX)
RTT(Park)
tAONAS
(MIN)
tCPDED
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(MIN)
167
(MIN) + tAOFAS (MAX)
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8Gb: x8, x16 Automotive DDR4 SDRAM
ODT Input Buffer Disable Mode for Power-Down
Figure 106: ODT Power-Down Exit with ODT Buffer Disable Mode
diff_CK
CKE
ODT_A
(DLL enabled)
Floating
tADC
tXP
RTT(Park)
DRAM_RTT_A
RTT(NOM)
DODTLon
ODT_B
(DLL disabled)
(MAX)
tADC
(MIN)
Floating
tXP
DRAM_RTT_B
RTT(NOM)
RTT(Park)
tAONAS
(MIN)
tAOFAS
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(MAX)
168
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8Gb: x8, x16 Automotive DDR4 SDRAM
CRC Write Data Feature
CRC Write Data Feature
CRC Write Data
The CRC write data feature takes the CRC generated data from the DRAM controller and
compares it to the internally CRC generated data and determines whether the two
match (no CRC error) or do not match (CRC error).
Figure 107: CRC Write Data Operation
DRAM
DRAM Controller
Data
Data
CRC
engine
CRC
engine
CRC
Code
Data
CRC Code
CRC Code
Compare
CRC
WRITE CRC DATA Operation
A DRAM controller generates a CRC checksum using a 72-bit CRC tree and forms the
write data frames, as shown in the following CRC data mapping tables for the x4, x8, and
x16 configurations. A x4 device has a CRC tree with 32 input data bits used, and the remaining upper 40 bits D[71:32] being 1s. A x8 device has a CRC tree with 64 input data
bits used, and the remaining upper 8 bits dependant upon whether DM_n/DBI_n is
used (1s are sent when not used). A x16 device has two identical CRC trees each, one for
the lower byte and one for the upper byte, with 64 input data bits used by each, and the
remaining upper 8 bits on each byte dependant upon whether DM_n/DBI_n is used (1s
are sent when not used). For a x8 and x16 DRAMs, the DRAM memory controller must
send 1s in transfer 9 location whether or not DM_n/DBI_n is used.
The DRAM checks for an error in a received code word D[71:0] by comparing the received checksum against the computed checksum and reports errors using the
ALERT_n signal if there is a mismatch. The DRAM can write data to the DRAM core
without waiting for the CRC check for full writes when DM is disabled. If bad data is
written to the DRAM core, the DRAM memory controller will try to overwrite the bad
data with good data; this means the DRAM controller is responsible for data coherency
when DM is disabled. However, in the case where both CRC and DM are enabled via
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8Gb: x8, x16 Automotive DDR4 SDRAM
CRC Write Data Feature
MRS (that is, persistent mode), the DRAM will not write bad data to the core when a
CRC error is detected.
DBI_n and CRC Both Enabled
The DRAM computes the CRC for received written data D[71:0]. Data is not inverted
back based on DBI before it is used for computing CRC. The data is inverted back based
on DBI before it is written to the DRAM core.
DM_n and CRC Both Enabled
When both DM and write CRC are enabled in the DRAM mode register, the DRAM calculates CRC before sending the write data into the array. If there is a CRC error, the
DRAM blocks the WRITE operation and discards the data. If a CRC error is encountered
from a WRITE with auto precharge (WRA), the DRAM will not block the precharge. The
Nonconsecutive WRITE (BL8/BC4-OTF) with 2 tCK Preamble and Write CRC in Same or
Different Bank Group and the WRITE (BL8/BC4-OTF/Fixed) with 1tCK Preamble and
Write CRC in Same or Different BankGroup figures in the WRITE Operation section
show timing differences when DM is enabled.
DM_n and DBI_n Conflict During Writes with CRC Enabled
Both write DBI_n and DM_n can not be enabled at the same time; read DBI_n and
DM_n can be enabled at the same time.
CRC and Write Preamble Restrictions
When write CRC is enabled:
• And 1tCK WRITE preamble mode is enabled, a tCCD_S or tCCD_L of 4 clocks is not
allowed.
• And 2tCK WRITE preamble mode is enabled, a tCCD_S or tCCD_L of 6 clocks is not
allowed.
CRC Simultaneous Operation Restrictions
When write CRC is enabled, neither MPR writes nor per-DRAM mode is allowed.
CRC Polynomial
The CRC polynomial used by DDR4 is the ATM-8 HEC, X8 + X2 + X1 + 1.
A combinatorial logic block implementation of this 8-bit CRC for 72 bits of data includes 272 two-input XOR gates contained in eight 6-XOR-gate-deep trees.
The CRC polynomial and combinatorial logic used by DDR4 is the same as used on
GDDR5.
The error coverage from the DDR4 polynomial used is shown in the following table.
Table 54: CRC Error Detection Coverage
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Error Type
Detection Capability
Random single-bit errors
100%
Random double-bit errors
100%
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CRC Write Data Feature
Table 54: CRC Error Detection Coverage (Continued)
Error Type
Detection Capability
Random odd count errors
100%
Random multibit UI vertical column error
detection excluding DBI bits
100%
CRC Combinatorial Logic Equations
module CRC8_D72;
// polynomial: (0 1 2 8)
// data width: 72
// convention: the first serial data bit is D[71]
//initial condition all 0 implied
// "^" = XOR
function [7:0]
nextCRC8_D72;
input [71:0] Data;
input [71:0] D;
reg [7:0] CRC;
begin
D = Data;
CRC[0] =
D[69]^D[68]^D[67]^D[66]^D[64]^D[63]^D[60]^D[56]^D[54]^D[53]^D[52]^D[50]^D[49
]^D[48]^D[45]^D[43]^D[40]^D[39]^D[35]^D[34]^D[31]^D[30]^D[28]^D[23]^D[21]^D[1
9]^D[18]^D[16]^D[14]^D[12]^D[8]^D[7]^D[6]^D[0];
CRC[1] =
D[70]^D[66]^D[65]^D[63]^D[61]^D[60]^D[57]^D[56]^D[55]^D[52]^D[51]^D[48]^D[46
]^D[45]^D[44]^D[43]^D[41]^D[39]^D[36]^D[34]^D[32]^D[30]^D[29]^D[28]^D[24]^D[2
3]^D[22]^D[21]^D[20]^D[18]^D[17]^D[16]^D[15]^D[14]^D[13]^D[12]^D[9]^D[6]^D[1
]^D[0];
CRC[2] =
D[71]^D[69]^D[68]^D[63]^D[62]^D[61]^D[60]^D[58]^D[57]^D[54]^D[50]^D[48]^D[47
]^D[46]^D[44]^D[43]^D[42]^D[39]^D[37]^D[34]^D[33]^D[29]^D[28]^D[25]^D[24]^D[2
2]^D[17]^D[15]^D[13]^D[12]^D[10]^D[8]^D[6]^D[2]^D[1]^D[0];
CRC[3] =
D[70]^D[69]^D[64]^D[63]^D[62]^D[61]^D[59]^D[58]^D[55]^D[51]^D[49]^D[48]^D[47
]^D[45]^D[44]^D[43]^D[40]^D[38]^D[35]^D[34]^D[30]^D[29]^D[26]^D[25]^D[23]^D[1
8]^D[16]^D[14]^D[13]^D[11]^D[9]^D[7]^D[3]^D[2]^D[1];
CRC[4] =
D[71]^D[70]^D[65]^D[64]^D[63]^D[62]^D[60]^D[59]^D[56]^D[52]^D[50]^D[49]^D[48
]^D[46]^D[45]^D[44]^D[41]^D[39]^D[36]^D[35]^D[31]^D[30]^D[27]^D[26]^D[24]^D[1
9]^D[17]^D[15]^D[14]^D[12]^D[10]^D[8]^D[4]^D[3]^D[2];
CRC[5] =
D[71]^D[66]^D[65]^D[64]^D[63]^D[61]^D[60]^D[57]^D[53]^D[51]^D[50]^D[49]^D[47
]^D[46]^D[45]^D[42]^D[40]^D[37]^D[36]^D[32]^D[31]^D[28]^D[27]^D[25]^D[20]^D[1
8]^D[16]^D[15]^D[13]^D[11]^D[9]^D[5]^D[4]^D[3];
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8Gb: x8, x16 Automotive DDR4 SDRAM
CRC Write Data Feature
CRC[6] =
D[67]^D[66]^D[65]^D[64]^D[62]^D[61]^D[58]^D[54]^D[52]^D[51]^D[50]^D[48]^D[47
]^D[46]^D[43]^D[41]^D[38]^D[37]^D[33]^D[32]^D[29]^D[28]^D[26]^D[21]^D[19]^D[1
7]^D[16]^D[14]^D[12]^D[10]^D[6]^D[5]^D[4];
CRC[7] =
D[68]^D[67]^D[66]^D[65]^D[63]^D[62]^D[59]^D[55]^D[53]^D[52]^D[51]^D[49]^D[48
]^D[47]^D[44]^D[42]^D[39]^D[38]^D[34]^D[33]^D[30]^D[29]^D[27]^D[22]^D[20]^D[1
8]^D[17]^D[15]^D[13]^D[11]^D[7]^D[6]^D[5];
nextCRC8_D72 = CRC;
Burst Ordering for BL8
DDR4 supports fixed WRITE burst ordering [A2:A1:A0 = 0:0:0] when write CRC is enabled in BL8 (fixed).
CRC Data Bit Mapping
Table 55: CRC Data Mapping for x4 Devices, BL8
Transfer
Function
0
1
2
3
4
5
6
7
8
9
DQ0
D0
D1
D2
D3
D4
D5
D6
D7
CRC0
CRC4
DQ1
D8
D9
D10
D11
D12
D13
D14
D15
CRC1
CRC5
DQ2
D16
D17
D18
D19
D20
D21
D22
D23
CRC2
CRC6
DQ3
D24
D25
D26
D27
D28
D29
D30
D31
CRC3
CRC7
6
7
8
9
Table 56: CRC Data Mapping for x8 Devices, BL8
Transfer
Function
0
1
DQ0
D0
D1
D2
D3
D4
D5
D6
D7
CRC0
1
DQ1
D8
D9
D10
D11
D12
D13
D14
D15
CRC1
1
DQ2
D16
D17
D18
D19
D20
D21
D22
D23
CRC2
1
DQ3
D24
D25
D26
D27
D28
D29
D30
D31
CRC3
1
DQ4
D32
D33
D34
D35
D36
D37
D38
D39
CRC4
1
DQ5
D40
D41
D42
D43
D44
D45
D46
D47
CRC5
1
DQ6
D48
D49
D50
D51
D52
D53
D54
D55
CRC6
1
DQ7
D56
D57
D58
D59
D60
D61
D62
D63
CRC7
1
DM_n/
DBI_n
D64
D65
D66
D67
D68
D69
D70
D71
1
1
2
3
4
5
A x16 device is treated as two x8 devices; a x16 device will have two identical CRC trees
implemented. CRC[7:0] covers data bits D[71:0], and CRC[15:8] covers data bits
D[143:72].
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8Gb: x8, x16 Automotive DDR4 SDRAM
CRC Write Data Feature
Table 57: CRC Data Mapping for x16 Devices, BL8
Transfer
Function
0
1
2
3
4
5
6
7
8
9
DQ0
D0
D1
D2
D3
D4
D5
D6
D7
CRC0
1
DQ1
D8
D9
D10
D11
D12
D13
D14
D15
CRC1
1
DQ2
D16
D17
D18
D19
D20
D21
D22
D23
CRC2
1
DQ3
D24
D25
D26
D27
D28
D29
D30
D31
CRC3
1
DQ4
D32
D33
D34
D35
D36
D37
D38
D39
CRC4
1
DQ5
D40
D41
D42
D43
D44
D45
D46
D47
CRC5
1
DQ6
D48
D49
D50
D51
D52
D53
D54
D55
CRC6
1
DQ7
D56
D57
D58
D59
D60
D61
D62
D63
CRC7
1
LDM_n/
LDBI_n
D64
D65
D66
D67
D68
D69
D70
D71
1
1
DQ8
D72
D73
D74
D75
D76
D77
D78
D79
CRC8
1
DQ9
D80
D81
D82
D83
D84
D85
D86
D87
CRC9
1
DQ10
D88
D89
D90
D91
D92
D93
D94
D95
CRC10
1
DQ11
D96
D97
D98
D99
D100
D101
D102
D103
CRC11
1
DQ12
D104
D105
D106
D107
D108
D109
D110
D111
CRC12
1
DQ13
D112
D113
D114
D115
D116
D117
D118
D119
CRC13
1
DQ14
D120
D121
D122
D123
D124
D125
D126
D127
CRC14
1
DQ15
D128
D129
D130
D131
D132
D133
D134
D135
CRC15
1
UDM_n/
UDBI_n
D136
D137
D138
D139
D140
D141
D142
D143
1
1
CRC Enabled With BC4
If CRC and BC4 are both enabled, then address bit A2 is used to transfer critical data
first for BC4 writes.
CRC with BC4 Data Bit Mapping
For a x4 device, the CRC tree inputs are 16 data bits, and the inputs for the remaining
bits are 1.
When A2 = 1, data bits D[7:4] are used as inputs for D[3:0], D[15:12] are used as inputs to
D[11:8], and so forth, for the CRC tree.
Table 58: CRC Data Mapping for x4 Devices, BC4
Transfer
Function
0
1
2
3
DQ0
D0
D1
D2
D3
DQ1
D8
D9
D10
DQ2
D16
D17
D18
4
5
6
7
8
9
1
1
1
1
CRC0
CRC4
D11
1
1
1
1
CRC1
CRC5
D19
1
1
1
1
CRC2
CRC6
A2 = 0
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CRC Write Data Feature
Table 58: CRC Data Mapping for x4 Devices, BC4 (Continued)
Transfer
Function
0
1
2
3
4
5
6
7
8
9
DQ3
D24
D25
D26
D27
1
1
1
1
CRC3
CRC7
A2 = 1
DQ0
D4
D5
D6
D7
1
1
1
1
CRC0
CRC4
DQ1
D12
D13
D14
D15
1
1
1
1
CRC1
CRC5
DQ2
D20
D21
D22
D23
1
1
1
1
CRC2
CRC6
DQ3
D28
D29
D30
D31
1
1
1
1
CRC3
CRC7
For a x8 device, the CRC tree inputs are 36 data bits.
When A2 = 0, the input bits D[67:64]) are used if DBI_n or DM_n functions are enabled;
if DBI_n and DM_n are disabled, then D[67:64]) are 1.
When A2 = 1, data bits D[7:4] are used as inputs for D[3:0], D[15:12] are used as inputs to
D[11:8], and so forth, for the CRC tree. The input bits D[71:68]) are used if DBI_n or
DM_n functions are enabled; if DBI_n and DM_n are disabled, then D[71:68]) are 1.
Table 59: CRC Data Mapping for x8 Devices, BC4
Transfer
Function
0
1
2
3
DQ0
D0
D1
D2
D3
DQ1
D8
D9
D10
DQ2
D16
D17
DQ3
D24
DQ4
D32
DQ5
4
5
6
7
8
9
1
1
1
1
CRC0
1
D11
1
1
1
1
CRC1
1
D18
D19
1
1
1
1
CRC2
1
D25
D26
D27
1
1
1
1
CRC3
1
D33
D34
D35
1
1
1
1
CRC4
1
D40
D41
D42
D43
1
1
1
1
CRC5
1
DQ6
D48
D49
D50
D51
1
1
1
1
CRC6
1
DQ7
D56
D57
D58
D59
1
1
1
1
CRC7
1
DM_n/DBI_n
D64
D65
D66
D67
1
1
1
1
1
1
A2 = 0
A2 = 1
DQ0
D4
D5
D6
D7
1
1
1
1
CRC0
1
DQ1
D12
D13
D14
D15
1
1
1
1
CRC1
1
DQ2
D20
D21
D22
D23
1
1
1
1
CRC2
1
DQ3
D28
D29
D30
D31
1
1
1
1
CRC3
1
DQ4
D36
D37
D38
D39
1
1
1
1
CRC4
1
DQ5
D44
D45
D46
D47
1
1
1
1
CRC5
1
DQ6
D52
D53
D54
D55
1
1
1
1
CRC6
1
DQ7
D60
D61
D62
D63
1
1
1
1
CRC7
1
DM_n/DBI_n
D68
D69
D70
D71
1
1
1
1
1
1
There are two identical CRC trees for x16 devices, each have CRC tree inputs of 36 bits.
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CRC Write Data Feature
When A2 = 0, input bits D[67:64] are used if DBI_n or DM_n functions are enabled; if
DBI_n and DM_n are disabled, then D[67:64] are 1s. The input bits D[139:136] are used
if DBI_n or DM_n functions are enabled; if DBI_n and DM_n are disabled, then
D[139:136] are 1s.
When A2 = 1, data bits D[7:4] are used as inputs for D[3:0], D[15:12] are used as inputs
for D[11:8], and so forth, for the CRC tree. Input bits D[71:68] are used if DBI_n or DM_n
functions are enabled; if DBI_n and DM_n are disabled, then D[71:68] are 1s. The input
bits D[143:140] are used if DBI_n or DM_n functions are enabled; if DBI_n and DM_n
are disabled, then D[143:140] are 1s.
Table 60: CRC Data Mapping for x16 Devices, BC4
Transfer
Function
0
1
2
3
4
5
6
7
8
9
A2 = 0
DQ0
D0
D1
D2
D3
1
1
1
1
CRC0
1
DQ1
D8
D9
D10
D11
1
1
1
1
CRC1
1
DQ2
D16
D17
D18
D19
1
1
1
1
CRC2
1
DQ3
D24
D25
D26
D27
1
1
1
1
CRC3
1
DQ4
D32
D33
D34
D35
1
1
1
1
CRC4
1
DQ5
D40
D41
D42
D43
1
1
1
1
CRC5
1
DQ6
D48
D49
D50
D51
1
1
1
1
CRC6
1
DQ7
D56
D57
D58
D59
1
1
1
1
CRC7
1
LDM_n/LDBI_n
D64
D65
D66
D67
1
1
1
1
1
1
DQ8
D72
D73
D74
D75
1
1
1
1
CRC8
1
DQ9
D80
D81
D82
D83
1
1
1
1
CRC9
1
DQ10
D88
D89
D90
D91
1
1
1
1
CRC10
1
DQ11
D96
D97
D98
D99
1
1
1
1
CRC11
1
DQ12
D104
D105
D106
D107
1
1
1
1
CRC12
1
DQ13
D112
D113
D114
D115
1
1
1
1
CRC13
1
DQ14
D120
D121
D122
D123
1
1
1
1
CRC14
1
DQ15
D128
D129
D130
D131
1
1
1
1
CRC15
1
UDM_n/UDBI_n
D136
D137
D138
D139
1
1
1
1
1
1
A2 = 1
DQ0
D4
D5
D6
D7
1
1
1
1
CRC0
1
DQ1
D12
D13
D14
D15
1
1
1
1
CRC1
1
DQ2
D20
D21
D22
D23
1
1
1
1
CRC2
1
DQ3
D28
D29
D30
D31
1
1
1
1
CRC3
1
DQ4
D36
D37
D38
D39
1
1
1
1
CRC4
1
DQ5
D44
D45
D46
D47
1
1
1
1
CRC5
1
DQ6
D52
D53
D54
D55
1
1
1
1
CRC6
1
DQ7
D60
D61
D62
D63
1
1
1
1
CRC7
1
LDM_n/LDBI_n
D68
D69
D70
D71
1
1
1
1
1
1
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CRC Write Data Feature
Table 60: CRC Data Mapping for x16 Devices, BC4 (Continued)
Transfer
Function
0
1
2
3
4
5
6
7
8
9
DQ8
D76
D77
D78
D79
1
1
1
1
CRC8
1
DQ9
D84
D85
D86
D87
1
1
1
1
CRC9
1
DQ10
D92
D93
D94
D95
1
1
1
1
CRC10
1
DQ11
D100
D101
D102
D103
1
1
1
1
CRC11
1
DQ12
D108
D109
D110
D111
1
1
1
1
CRC12
1
DQ13
D116
D117
D118
D119
1
1
1
1
CRC13
1
DQ14
D124
D125
D126
D127
1
1
1
1
CRC14
1
DQ15
D132
D133
D134
D135
1
1
1
1
CRC15
1
UDM_n/UDBI_n
D140
D141
D142
D143
1
1
1
1
1
1
CRC Equations for x8 Device in BC4 Mode with A2 = 0 and A2 = 1
The following example is of a CRC tree when x8 is used in BC4 mode (x4 and x16 CRC
trees have similar differences).
CRC[0], A2=0 =
1^1^D[67]^D[66]^D[64]^1^1^D[56]^1^1^1^D[50]^D[49]^D[48]^1^D[43]^D[40]^1^D[3
5]^D[34]^1^1^1^1^1^D[19]^D[18]^D[16]^1^1^D[8] ^1^1^ D[0] ;
CRC[0], A2=1 =
1^1^D[71]^D[70]^D[68]^1^1^D[60]^1^1^1^D[54]^D[53]^D[52]^1^D[47]^D[44]^1^D[3
9]^D[38]^1^1^1^1^1^D[23]^D[22]^D[20]^1^1^D[12]^1^1^D[4] ;
CRC[1], A2=0 =
1^D[66]^D[65]^1^1^1^D[57]^D[56]^1^1^D[51]^D[48]^1^1^1^D[43]^D[41]^1^1^D[34
]^D[32]^1^1^1^D[24]^1^1^1^1^D[18]^D[17]^D[16]^1^1^1^1^D[9] ^1^ D[1]^D[0];
CRC[1], A2=1 =
1^D[70]^D[69]^1^1^1^D[61]^D[60]^1^1^D[55]^D[52]^1^1^1^D[47]^D[45]^1^1^D[38
]^D[36]^1^1^1^D[28]^1^1^1^1^D[22]^D[21]^D[20]^1^1^1^1^D[13]^1^D[5]^D[4];
CRC[2], A2=0 =
1^1^1^1^1^1^1^D[58]^D[57]^1^D[50]^D[48]^1^1^1^D[43]^D[42]^1^1^D[34]^D[33]^1
^1^D[25]^D[24]^1^D[17]^1^1^1^D[10]^D[8] ^1^D[2]^D[1]^D[0];
CRC[2], A2=1 =
1^1^1^1^1^1^1^D[62]^D[61]^1^D[54]^D[52]^1^1^1^D[47]^D[46]^1^1^D[38]^D[37]^1
^1^D[29]^D[28]^1^D[21]^1^1^1^D[14]^D12]^1^D[6]^D[5]^D[4];
CRC[3], A2=0 =
1^1^D[64]^1^1^1^D[59]^D[58]^1^D[51]^D[49]^D[48]^1^1^1^D[43]^D[40]^1^D[35]^
D[34]^1^1^D[26]^D[25]^1^D[18]^D[16]^1^1^D[11]^D[9] ^1^D[3]^D[2]^D[1];
CRC[3], A2=1 =
1^1^D[68]^1^1^1^D[63]^D[62]^1^D[55]^D[53]^D[52]^1^1^1^D[47]^D[44]^1^D[39]^
D[38]^1^1^D[30]^D[29]^1^D[22]^D[20]^1^1^D[15]^D[13]^1^D[7]^D[6]^D[5];
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CRC Write Data Feature
CRC[4], A2=0 =
1^1^D[65]^D[64]^1^1^1^D[59]^D[56]^1^D[50]^D[49]^D[48]^1^1^1^D[41]^1^1^D[35
]^1^1^D[27]^D[26]^D[24]^D[19]^D[17]^1^1^1^D[10]^D[8] ^1^D[3]^D[2];
CRC[4], A2=1 =
1^1^D[69]^D[68]^1^1^1^D[63]^D[60]^1^D[54]^D[53]^D[52]^1^1^1^D[45]^1^1^D[39
]^1^1^D[31]^D[30]^D[28]^D[23]^D[21]^1^1^1^D[14]^D[12]^1^D[7]^D[6];
CRC[5], A2=0 =
1^D[66]^D[65]^D[64]^1^1^1^D[57]^1^D[51]^D[50]^D[49]^1^1^1^D[42]^D[40]^1^1^
D[32]^1^1^D[27]^D[25]^1^D[18]^D[16]^1^1^D[11]^D[9] ^1^1^D[3];
CRC[5], A2=1 =
1^D[70]^D[69]^D[68]^1^1^1^D[61]^1^D[55]^D[54]^D[53]^1^1^1^D[46]^D[44]^1^1^
D[36]^1^1^D[31]^D[29]^1^D[22]^D[20]^1^1^D[15]^D[13]^1^1^D[7];
CRC[6], A2=0 =
D[67]^D[66]^D[65]^D[64]^1^1^D[58]^1^1^D[51]^D[50]^D[48]^1^1^D[43]^D[41]^1^1
^D[33]^D[32]^1^1^D[26]^1^D[19]^D[17]^D[16]^1^1^D[10]^1^1^1;
CRC[6], A2=1 =
D[71]^D[70]^D[69]^D[68]^1^1^D[62]^1^1^D[55]^D[54]^D[52]^1^1^D[47]^D[45]^1^1
^D[37]^D[36]^1^1^D[30]^1^D[23]^D[21]^D[20]^1^1^D[14]^1^1^1;
CRC[7], A2=0 =
1^D[67]^D[66]^D[65]^1^1^D[59]^1^1^1^D[51]^D[49]^D[48]^1^1^D[42]^1^1^D[34]^
D[33]^1^1^D[27]^1^1^D[18]^D[17]^1^1^D[11]^1^1^1;
CRC[7], A2=1 =
1^D[71]^D[70]^D[69]^1^1^D[63]^1^1^1^D[55]^D[53]^D[52]^1^1^D[46]^1^1^D[38]^
D[37]^1^1^D[31]^1^1^D[22]^D[21]^1^1^D[15]^1^1^1;
CRC Error Handling
The CRC error mechanism shares the same ALERT_n signal as CA parity for reporting
write errors to the DRAM. The controller has two ways to distinguish between CRC errors and CA parity errors: 1) Read DRAM mode/MPR registers, and 2) Measure time
ALERT_n is LOW. To speed up recovery for CRC errors, CRC errors are only sent back as
a "short" pulse; the maximum pulse width is roughly ten clocks (unlike CA parity where
ALERT_n is LOW longer than 45 clocks). The ALERT_n LOW could be longer than the
maximum limit at the controller if there are multiple CRC errors as the ALERT_n signals
are connected by a daisy chain bus. The latency to ALERT_n signal is defined as
tCRC_ALERT in the following figure.
The DRAM will set the error status bit located at MR5[3] to a 1 upon detecting a CRC
error, which will subsequently set the CRC error status flag in the MPR error log HIGH
(MPR Page1, MPR3[7]). The CRC error status bit (and CRC error status flag) remains set
at 1 until the DRAM controller clears the CRC error status bit using an MRS command
to set MR5[3] to a 0. The DRAM controller, upon seeing an error as a pulse width, will
retry the write transactions. The controller should consider the worst-case delay for
ALERT_n (during initialization) and backup the transactions accordingly. The DRAM
controller may also be made more intelligent and correlate the write CRC error to a specific rank or a transaction.
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8Gb: x8, x16 Automotive DDR4 SDRAM
CRC Write Data Feature
Figure 108: CRC Error Reporting
CK_c
CK_t
DQIN
T0
T1
Dx
T2
Dx+1
T3
Dx+2 Dx+3
Dx+4
T4
Dx+5
Dx+6
T5
Dx+7
CRCy
T6
Ta0
Ta1
Ta2
Ta3
Tb0
Tb1
1
CRC ALERT_PW (MAX)
tCRC_ALERT
ALERT_n
CRC ALERT_PW (MIN)
Transition Data
Notes:
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Don’t Care
1. D[71:1] CRC computed by DRAM did not match CRC[7:0] at T5 and started error generating process at T6.
2. CRC ALERT_PW is specified from the point where the DRAM starts to drive the signal
LOW to the point where the DRAM driver releases and the controller starts to pull the
signal up.
3. Timing diagram applies to x4, x8, and x16 devices.
178
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CRC Write Data Flow Diagram
Figure 109: CA Parity Flow Diagram
DRAM write
process start
MR2 12 enable CRC
MR5 3 set CRC error clear to 0
MR5 10 enable/disable DM
MR3[10:9] WCL if DM enabled
Capture data
CRC
enabled
Persistent
mode
enabled
Yes
DRAM
CRC same as
controller
CRC
Yes
Yes
No
No
Transfer data
internally
Transfer data
internally
Transfer Data
Internally
DRAM
CRC same as
controller
CRC
Yes
CA error
179
Yes
No
No
MR5[3] = 0
at WRITE
ALERT_n LOW
6 to 10 CKs
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WRITE burst
completed
WRITE burst
completed
No
MR5[A3] and
PAGE1 MPR3[7]
remain set to 1
Yes
MR5[3] = 0
at WRITE
Set error flag
MR5[A3] 1
ALERT_n LOW
6 to 10 CKs
Set error status
PAGE1 MPR3[7] 1
WRITE burst
completed
Bad data written
MR5 3 reset to 0 if desired
ALERT_n HIGH
WRITE burst
completed
No
MR5[A3] and
PAGE1 MPR3[7]
remain set to 1
Yes
Set error flag
MR5[A3] 1
Set error status
PAGE1 MPR3[7] 1
WRITE burst
rejected
Bad data not written
MR5 3 reset to 0 if desired
8Gb: x8, x16 Automotive DDR4 SDRAM
CRC Write Data Feature
ALERT_n HIGH
WRITE burst
completed
No
8Gb: x8, x16 Automotive DDR4 SDRAM
Data Bus Inversion
Data Bus Inversion
The DATA BUS INVERSION (DBI) function is supported only for x8 and x16 configurations (it is not supported on x4 devices). DBI opportunistically inverts data bits, and in
conjunction with the DBI_n I/O, less than half of the DQs will switch LOW for a given
DQS strobe edge. The DBI function shares a common pin with the DATA MASK (DM)
and TDQS functions. The DBI function applies to either or both READ and WRITE operations: Write DBI cannot be enabled at the same time the DM function is enabled, and
DBI is not allowed during MPR READ operation. Valid configurations for TDQS, DM,
and DBI functions are shown below.
Table 61: DBI vs. DM vs. TDQS Function Matrix
Read DBI
Write DBI
Data Mask (DM)
TDQS (x8 only)
Enabled (or Disabled)
MR5[12]=1 (or
MR5[12] = 0)
Disabled
MR5[11] = 0
Disabled
MR5[10] = 0
Disabled
MR1[11] = 0
Enabled
MR5[11] = 1
Disabled
MR5[10] = 0
Disabled
MR1[11] = 0
Disabled
MR5[11] = 0
Enabled
MR5[10] = 1
Disabled
MR1[11] = 0
Disabled
MR5[11] = 0
Disabled
MR5[10] = 0
Enabled
MR1[11] = 1
Disabled
MR5[12] = 0
DBI During a WRITE Operation
If DBI_n is sampled LOW on a given byte lane during a WRITE operation, the DRAM inverts write data received on the DQ inputs prior to writing the internal memory array. If
DBI_n is sampled HIGH on a given byte lane, the DRAM leaves the data received on the
DQ inputs noninverted. The write DQ frame format is shown below for x8 and x16 configurations (the x4 configuration does not support the DBI function).
Table 62: DBI Write, DQ Frame Format (x8)
Transfer
Function
0
1
2
3
4
5
6
7
DQ[7:0]
Byte 0
Byte 1
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
Byte 7
DM_n or
DBI_n
DM0 or
DBI0
DM1 or
DBI1
DM2 or
DBI2
DM3 or
DBI3
DM4 or
DBI4
DM5 or
DBI5
DM6 or
DBI6
DM7 or
DBI7
Table 63: DBI Write, DQ Frame Format (x16)
Transfer, Lower (L) and Upper(U)
Function
0
1
2
3
4
5
6
7
DQ[7:0]
LByte 0
LByte 1
LByte 2
LByte 3
LByte 4
LByte 5
LByte 6
LByte 7
LDM_n or
LDBI_n
LDM0 or
LDBI0
LDM1 or
LDBI1
LDM2 or
LDBI2
LDM3 or
LDBI3
LDM4 or
LDBI4
LDM5 or
LDBI5
LDM6 or
LDBI6
LDM7 or
LDBI7
DQ[15:8]
UByte 0
UByte 1
UByte 2
UByte 3
UByte 4
UByte 5
UByte 6
UByte 7
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8Gb: x8, x16 Automotive DDR4 SDRAM
Data Bus Inversion
Table 63: DBI Write, DQ Frame Format (x16) (Continued)
Transfer, Lower (L) and Upper(U)
Function
0
1
2
3
4
5
6
7
UDM_n or
UDBI_n
UDM0 or
UDBI0
UDM1 or
UDBI1
UDM2 or
UDBI2
UDM3 or
UDBI3
UDM4 or
UDBI4
UDM5 or
UDBI5
UDM6 or
UDBI6
UDM7 or
UDBI7
DBI During a READ Operation
If the number of 0 data bits within a given byte lane is greater than four during a READ
operation, the DRAM inverts read data on its DQ outputs and drives the DBI_n pin
LOW; otherwise, the DRAM does not invert the read data and drives the DBI_n pin
HIGH. The read DQ frame format is shown below for x8 and x16 configurations (the x4
configuration does not support the DBI function).
Table 64: DBI Read, DQ Frame Format (x8)
Transfer Byte
Function
0
1
2
3
4
5
6
7
DQ[7:0]
Byte 0
Byte 1
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
Byte 7
DBI_n
DBI0
DBI1
DBI2
DBI3
DBI4
DBI5
DBI6
DBI7
Table 65: DBI Read, DQ Frame Format (x16)
Transfer Byte, Lower (L) and Upper(U)
Function
0
1
2
3
4
5
6
7
DQ[7:0]
LByte 0
LByte 1
LByte 2
LByte 3
LByte 4
LByte 5
LByte 6
LByte 7
LDBI_n
LDBI0
LDBI1
LDBI2
LDBI3
LDBI4
LDBI5
LDBI6
LDBI7
DQ[15:8]
UByte 0
UByte 1
UByte 2
UByte 3
UByte 4
UByte 5
UByte 6
UByte 7
UDBI_n
UDBI0
UDBI1
UDBI2
UDBI3
UDBI4
UDBI5
UDBI6
UDBI7
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8Gb: x8, x16 Automotive DDR4 SDRAM
Data Mask
Data Mask
The DATA MASK (DM) function, also described as PARTIAL WRITE, is supported only
for x8 and x16 configurations (it is not supported on x4 devices). The DM function
shares a common pin with the DBI_n and TDQS functions. The DM function applies
only to WRITE operations and cannot be enabled at the same time the WRITE DBI
function is enabled. The valid configurations for the TDQS, DM, and DBI functions are
shown here.
Table 66: DM vs. TDQS vs. DBI Function Matrix
Data Mask (DM)
TDQS (x8 only)
Write DBI
Read DBI
Enabled
MR5[10] = 1
Disabled
MR1[11] = 0
Disabled
MR5[11] = 0
Enabled or Disabled
MR5[12] = 1 or
MR5[12] = 0
Disabled
MR5[10] = 0
Enabled
MR1[11] = 1
Disabled
MR5[11] = 0
Disabled
MR5[12] = 0
Disabled
MR1[11] = 0
Enabled
MR5[11] = 1
Enabled or Disabled
MR5[12] = 1 or
MR5[12] = 0
Disabled
MR1[11] = 0
Disabled
MR5[11] = 0
Enabled (or Disabled)
MR5[12] = 1 (or
MR5[12] = 0)
When enabled, the DM function applies during a WRITE operation. If DM_n is sampled
LOW on a given byte lane, the DRAM masks the write data received on the DQ inputs. If
DM_n is sampled HIGH on a given byte lane, the DRAM does not mask the data and
writes this data into the DRAM core. The DQ frame format for x8 and x16 configurations
is shown below. If both CRC write and DM are enabled (via MRS), the CRC will be
checked and valid prior to the DRAM writing data into the DRAM core. If a CRC error
occurs while the DM feature is enabled, CRC write persistent mode will be enabled and
data will not be written into the DRAM core. In the case of CRC write enabled and DM
disabled (via MRS), that is, CRC write nonpersistent mode, data is written to the DRAM
core even if a CRC error occurs.
Table 67: Data Mask, DQ Frame Format (x8)
Transfer
Function
0
1
2
3
4
5
6
7
DQ[7:0]
Byte 0
Byte 1
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
Byte 7
DM_n or
DBI_n
DM0 or
DBI0
DM1 or
DBI1
DM2 or
DBI2
DM3 or
DBI3
DM4 or
DBI4
DM5 or
DBI5
DM6 or
DBI6
DM7 or
DBI7
Table 68: Data Mask, DQ Frame Format (x16)
Transfer, Lower (L) and Upper (U)
Function
0
1
2
3
4
5
6
7
DQ[7:0]
LByte 0
LByte 1
LByte 2
LByte 3
LByte 4
LByte 5
LByte 6
LByte 7
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8Gb: x8, x16 Automotive DDR4 SDRAM
Data Mask
Table 68: Data Mask, DQ Frame Format (x16) (Continued)
Transfer, Lower (L) and Upper (U)
Function
0
1
2
3
4
5
6
7
LDM_n or
LDBI_n
LDM0 or
LDBI0
LDM1 or
LDBI1
LDM2 or
LDBI2
LDM3 or
LDBI3
LDM4 or
LDBI4
LDM5 or
LDBI5
LDM6 or
LDBI6
LDM7 or
LDBI7
DQ[15:8]
UByte 0
UByte 1
UByte 2
UByte 3
UByte 4
UByte 5
UByte 6
UByte 7
UDM_n or
UDBI_n
UDM0 or
UDBI0
UDM1 or
UDBI1
UDM2 or
UDBI2
UDM3 or
UDBI3
UDM4 or
UDBI4
UDM5 or
UDBI5
UDM6 or
UDBI6
UDM7 or
UDBI7
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8Gb: x8, x16 Automotive DDR4 SDRAM
Programmable Preamble Modes and DQS Postambles
Programmable Preamble Modes and DQS Postambles
The device supports programmable WRITE and READ preamble modes, either the normal 1tCK preamble mode or special 2tCK preamble mode. The 2 tCK preamble mode
places special timing constraints on many operational features as well as being supported for data rates of DDR4-2400 and faster. The WRITE preamble 1 tCK or 2tCK mode
can be selected independently from READ preamble 1tCK or 2tCK mode.
READ preamble training is also supported; this mode can be used by the DRAM controller to train or "read level" the DQS receivers.
There are tCCD restrictions under some circumstances:
• When 2tCK READ preamble mode is enabled, a tCCD_S or tCCD_L of 5 clocks is not
allowed.
• When 2tCK WRITE preamble mode is enabled and write CRC is not enabled, a tCCD_S
or tCCD_L of 5 clocks is not allowed.
• When 2tCK WRITE preamble mode is enabled and write CRC is enabled, a tCCD_S or
tCCD_L of 6 clocks is not allowed.
WRITE Preamble Mode
MR4[12] = 0 selects 1tCK WRITE preamble mode while MR4[12] = 1 selects 2 tCK WRITE
preamble mode. Examples are shown in the figures below.
Figure 110: 1tCK vs. 2tCK WRITE Preamble Mode
1tCK Mode
WR
WL
CK_c
CK_t
Preamble
DQS_t,
DQS_c
DQ
D0
D1
D2
D3
D4
D5
D6
D7
D0
D1
D2
D3
D4
D5
D6
D7
2tCK Mode
WR
WL
CK_c
CK_t
Preamble
DQS_t,
DQS_c
DQ
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8Gb: x8, x16 Automotive DDR4 SDRAM
Programmable Preamble Modes and DQS Postambles
CWL has special considerations when in the 2tCK WRITE preamble mode. The CWL value selected in MR2[5:3], as seen in table below, requires at least one additional clock
when the primary CWL value and 2tCK WRITE preamble mode are used; no additional
clocks are required when the alternate CWL value and 2tCK WRITE preamble mode are
used.
Table 69: CWL Selection
CWL - Primary Choice
Speed Bin
1tCK
2tCK
Preamble
CWL - Alternate Choice
1tCK
Preamble
2tCK Preamble
Preamble
DDR4-1600
9
N/A
11
N/A
DDR4-1866
10
N/A
12
N/A
DDR4-2133
11
N/A
14
N/A
DDR4-2400
12
14
16
16
DDR4-2666
14
16
18
18
DDR4-2933
16
18
20
20
DDR4-3200
16
18
20
20
1. CWL programmable requirement for MR2[5:3].
Note:
When operating in 2tCK WRITE preamble mode, tWTR (command based) and tWR
(MR0[11:9]) must be programmed to a value 1 clock greater than the tWTR and tWR setting normally required for the applicable speed bin to be JEDEC compliant; however,
Micron's DDR4 DRAMs do not require these additional tWTR and tWR clocks. The
CAS_n-to-CAS_n command delay to either a different bank group (tCCD_S) or the same
bank group (tCCD_L) have minimum timing requirements that must be satisfied between WRITE commands and are stated in the Timing Parameters by Speed Bin tables.
Figure 111: 1tCK vs. 2tCK WRITE Preamble Mode, tCCD = 4
1t CK Mode
CMD
WRITE
WRITE
CK_c
CK_t
tCCD
=4
WL
DQS_t,
DQS_c
Preamble
D0
DQ
D1
D2
D3
D4
D5
D6
D7
D0
D1
D2
D3
D1
D2
D3
D4
D5
D6
D7
D0
D1
2t CK Mode
CMD
WRITE
WRITE
CK_c
CK_t
tCCD
DQS_t,
DQS_c
=4
WL
Preamble
D0
DQ
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8Gb: x8, x16 Automotive DDR4 SDRAM
Programmable Preamble Modes and DQS Postambles
Figure 112: 1tCK vs. 2tCK WRITE Preamble Mode, tCCD = 5
1t CK Mode
CMD
WRITE
WRITE
CK_c
CK_t
tCCD
=5
WL
DQS_t,
DQS_c
Preamble
Preamble
D0
DQ
D1
D2
D3
D4
D5
D6
D7
D0
D1
D2
D3
2t CK Mode: t CCD = 5 is not allowed in 2t CK mode.
Note:
1. tCCD_S and tCCD_L = 5 tCKs is not allowed when in 2tCK WRITE preamble mode.
Figure 113: 1tCK vs. 2 tCK WRITE Preamble Mode, tCCD = 6
1t CK Mode
CMD
WRITE
WRITE
CK_c
CK_t
tCCD
WL
=6
DQS_t,
DQS_c
Preamble
Preamble
D0
DQ
D1
D2
D3
D4
D5
D6
D7
D5
D6
D7
D0
D1
D2
D3
D0
D1
D2
D3
2t CK Mode
CMD
WRITE
WRITE
CK_c
CK_t
tCCD
DQS_t,
DQS_c
WL
=6
Preamble
Preamble
D0
DQ
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D1
D2
D3
D4
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8Gb: x8, x16 Automotive DDR4 SDRAM
Programmable Preamble Modes and DQS Postambles
READ Preamble Mode
MR4[11] = 0 selects 1tCK READ preamble mode and MR4[11] = 1 selects 2tCK READ preamble mode. Examples are shown in the following figure.
Figure 114: 1tCK vs. 2tCK READ Preamble Mode
1tCK Mode
RD
CL
CK_c
CK_t
Preamble
DQS_t,
DQS_c
DQ
D0
D1
D2
D3
D4
D5
D6
D7
D0
D1
D2
D3
D4
D5
D6
D7
2tCK Mode
RD
CL
CK_c
CK_t
Preamble
DQS_t,
DQS_c
DQ
READ Preamble Training
DDR4 supports READ preamble training via MPR reads; that is, READ preamble training is allowed only when the DRAM is in the MPR access mode. The READ preamble
training mode can be used by the DRAM controller to train or "read level" its DQS receivers. READ preamble training is entered via an MRS command (MR4[10] = 1 is enabled and MR4[10] = 0 is disabled). After the MRS command is issued to enable READ
preamble training, the DRAM DQS signals are driven to a valid level by the time tSDO is
satisfied. During this time, the data bus DQ signals are held quiet, that is, driven HIGH.
The DQS_t signal remains driven LOW and the DQS_c signal remains driven HIGH until
an MPR Page0 READ command is issued (MPR0 through MPR3 determine which pattern is used), and when CAS latency (CL) has expired, the DQS signals will toggle normally depending on the burst length setting. To exit READ preamble training mode, an
MRS command must be issued, MR4[10] = 0.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Programmable Preamble Modes and DQS Postambles
Figure 115: READ Preamble Training
CMD
MRS
MPR RD
tSDO
CL
DQS_t
DQS_c,
DQs (Quiet/Driven HIGH)
D0
D1
D2
D3
D4
D5
D6
D7
WRITE Postamble
Whether the 1tCK or 2tCK WRITE preamble mode is selected, the WRITE postamble remains the same at ½tCK.
Figure 116: WRITE Postamble
1tCK Mode
WR
WL
CK_c
CK_t
Postamble
DQS_t,
DQS_c
D0
DQ
D1
D2
D3
D4
D5
D6
D7
2tCK Mode
WR
WL
CK_c
CK_t
Postamble
DQS_t,
DQS_c
DQ
D0
D1
D2
D3
D4
D5
D6
D7
READ Postamble
Whether the 1tCK or 2tCK READ preamble mode is selected, the READ postamble remains the same at ½tCK.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Programmable Preamble Modes and DQS Postambles
Figure 117: READ Postamble
1tCK Mode
RD
CL
CK_c
CK_t
Postamble
DQS_t,
DQS_c
D0
DQ
D1
D2
D3
D4
D5
D6
D7
2tCK Mode
RD
CL
CK_c
CK_t
Postamble
DQS_t,
DQS_c
DQ
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D0
189
D1
D2
D3
D4
D5
D6
D7
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8Gb: x8, x16 Automotive DDR4 SDRAM
Bank Access Operation
Bank Access Operation
DDR4 supports bank grouping: x4/x8 DRAMs have four bank groups (BG[1:0]), and
each bank group is comprised of four subbanks (BA[1:0]); x16 DRAMs have two bank
groups (BG[0]), and each bank group is comprised of four subbanks. Bank accesses to
different banks' groups require less time delay between accesses than bank accesses to
within the same bank's group. Bank accesses to different bank groups require tCCD_S
(or short) delay between commands while bank accesses within the same bank group
require tCCD_L (or long) delay between commands.
Figure 118: Bank Group x4/x8 Block Diagram
Bank 3
Bank 2
Bank 1
Bank 0
Memory Array
Bank Group 0
CMD/ADDR
Bank 3
Bank 2
Bank 1
Bank 0
Memory Array
Bank 3
Bank 2
Bank 1
Bank 0
Memory Array
Bank Group 1
Bank Group 2
Bank 3
Bank 2
Bank 1
Bank 0
Memory Array
Bank Group 3
CMD/ADDR
register
Sense amplifiers
Sense amplifiers
Sense amplifiers
Sense amplifiers
Local I/O gating
Local I/O gating
Local I/O gating
Local I/O gating
Global I/O gating
Data I/O
1. Bank accesses to different bank groups require tCCD_S.
2. Bank accesses within the same bank group require tCCD_L.
Notes:
Table 70: DDR4 Bank Group Timing Examples
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Parameter
DDR4-1600
DDR4-2133
DDR4-2400
tCCD_S
4nCK
4nCK
4nCK
tCCD_L
4nCK or 6.25ns
4nCK or 5.355ns
4nCK or 5ns
tRRD_S
(½K)
4nCK or 5ns
4nCK or 3.7ns
4nCK or 3.3ns
tRRD_L
(½K)
4nCK or 6ns
4nCK or 5.3ns
4nCK or 4.9ns
tRRD_S
(1K)
4nCK or 5ns
4nCK or 3.7ns
4nCK or 3.3ns
tRRD_L
(1K)
4nCK or 6ns
4nCK or 5.3ns
4nCK or 4.9ns
tRRD_S
(2K)
4nCK or 6ns
4nCK or 5.3ns
4nCK or 5.3ns
tRRD_L
(2K)
4nCK or 7.5ns
4nCK or 6.4ns
4nCK or 6.4ns
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8Gb: x8, x16 Automotive DDR4 SDRAM
Bank Access Operation
Table 70: DDR4 Bank Group Timing Examples (Continued)
Notes:
Parameter
DDR4-1600
DDR4-2133
DDR4-2400
tWTR_S
2nCK or 2.5ns
2nCK or 2.5ns
2nCK or 2.5ns
tWTR_L
4nCK or 7.5ns
4nCK or 7.5ns
4nCK or 7.5ns
1. Refer to Timing Tables for actual specification values, these values are shown for reference only and are not verified for accuracy.
2. Timings with both nCK and ns require both to be satisfied; that is, the larger time of the
two cases must be satisfied.
Figure 119: READ Burst tCCD_S and tCCD_L Examples
CK_c
CK_t
Command
T0
T1
READ
DES
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
DES
DES
READ
DES
DES
DES
DES
DES
READ
DES
tCCD_L
tCCD_S
Bank Group
(BG)
BG a
BG b
BG b
Bank
Bank c
Bank c
Bank c
Address
Col n
Col n
Col n
Don’t Care
Notes:
1. tCCD_S; CAS_n-to-CAS_n delay (short). Applies to consecutive CAS_n to different bank
groups (T0 to T4).
2. tCCD_L; CAS_n-to-CAS_n delay (long). Applies to consecutive CAS_n to the same bank
group (T4 to T10).
Figure 120: Write Burst tCCD_S and tCCD_L Examples
CK_c
CK_t
Command
T0
T1
WRITE
DES
T2
T3
T4
T5
T6
DES
DES
WRITE
DES
DES
T7
T8
T9
T10
T11
DES
DES
DES
WRITE
DES
tCCD_L
tCCD_S
Bank Group
(BG)
BG a
BG b
BG b
Bank
Bank c
Bank c
Bank c
Coln
Coln
Coln
Address
Don’t Care
Notes:
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1. tCCD_S; CAS_n-to-CAS_n delay (short). Applies to consecutive CAS_n to different bank
groups (T0 to T4).
2. tCCD_L; CAS_n-to-CAS_n delay (long). Applies to consecutive CAS_n to the same bank
group (T4 to T10).
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Bank Access Operation
Figure 121: tRRD Timing
CK_c
CK_t
Command
T0
T1
ACT
DES
T2
T3
T4
T5
T6
DES
DES
ACT
DES
DES
T8
T9
T10
T11
DES
DES
DES
ACT
DES
tRRD_L
tRRD_S
Bank
Group
(BG)
T7
BG a
BG b
BG b
Bank
Bank c
Bank c
Bank d
Address
Row n
Row n
Row n
Don’t Care
1. tRRD_S; ACTIVATE-to-ACTIVATE command period (short); applies to consecutive ACTIVATE commands to different bank groups (T0 and T4).
2. tRRD_L; ACTIVATE-to-ACTIVATE command period (long); applies to consecutive ACTIVATE commands to the different banks in the same bank group (T4 and T10).
Notes:
Figure 122: tWTR_S Timing (WRITE-to-READ, Different Bank Group, CRC and DM Disabled)
T0
T1
T2
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Tb0
Tb1
WRITE
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
READ
Valid
CK_c
CK_t
Command
tWTR_S
Bank
Group
Bank
Address
BGa
BGb
Bank c
Bank c
Col n
Col n
tWPRE
tWPST
DQS, DQS_c
DI
n
DQ
DI
n+ 1
DI
n+ 2
DI
n+ 3
DI
n+ 4
DI
n+ 5
DI
n+ 6
DI
n+ 7
WL
RL
Time Break
Note:
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Transitioning Data
Don’t Care
1. tWTR_S: delay from start of internal write transaction to internal READ command to a
different bank group.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Bank Access Operation
Figure 123: tWTR_L Timing (WRITE-to-READ, Same Bank Group, CRC and DM Disabled)
T0
T1
T2
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Tb0
Tb1
WRITE
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
READ
Valid
CK_c
CK_t
Command
tWTR_L
Bank
Group
Bank
Address
BGa
BGa
Bank c
Bank c
Col n
Col n
tWPRE
tWPST
DQS, DQS_c
DI
n
DQ
DI
n+ 1
DI
n+ 2
DI
n+ 3
DI
n+ 4
DI
n+ 5
DI
n+ 6
DI
n+ 7
WL
RL
Time Break
Note:
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Transitioning Data
Don’t Care
1. tWTR_L: delay from start of internal write transaction to internal READ command to the
same bank group.
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READ Operation
READ Operation
Read Timing Definitions
The read timings shown below are applicable in normal operation mode, that is, when
the DLL is enabled and locked.
Note: tDQSQ = both rising/falling edges of DQS; no tAC defined.
Rising data strobe edge parameters:
• tDQSCK (MIN)/(MAX) describes the allowed range for a rising data strobe edge relative to CK.
• tDQSCK is the actual position of a rising strobe edge relative to CK.
• tQSH describes the DQS differential output HIGH time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
Falling data strobe edge parameters:
• tQSL describes the DQS differential output LOW time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Figure 124: Read Timing Definition
CK_c
CK_t
tDQSCK
tDQSCK
tDQSCK
(MIN) tDQSCK (MAX) tDQSCK (MIN) tDQSCK (MAX)
MAX
center
tDQSCK
MIN
tDQSCKi
tDQSCKi
Rising strobe
region
window
Rising strobe
region
window
tDQSCKi
tDQSCKi
Rising strobe
region
window
Rising strobe
region
window
tDQSCKi
tDQSCKi
Rising strobe
region
window
Rising strobe
region
window
tDQSCK
tDQSCK
tQSH/DQS_c
tQSH/DQS_t
DQS_c
DQS_t
tQH
tQH
tDQSQ
tDQSQ
Associated
DQ Pins
Table 71: Read-to-Write and Write-to-Read Command Intervals
Access Type
Bank Group
Timing Parameters
Note
Read-to-Write, minimum
Same
CL - CWL + RBL/2 + 1tCK + tWPRE
1, 2
Different
CL - CWL + RBL/2 +
Same
Write-to-Read, minimum
Different
1tCK
+
tWPRE
1, 2
CWL + WBL/2 +
tWTR_L
1, 3
CWL + WBL/2 +
tWTR_S
1, 3
1. These timings require extended calibrations times tZQinit and tZQCS.
2. RBL: READ burst length associated with READ command, RBL = 8 for fixed 8 and on-thefly mode 8 and RBL = 4 for fixed BC4 and on-the-fly mode BC4.
3. WBL: WRITE burst length associated with WRITE command, WBL = 8 for fixed 8 and onthe-fly mode 8 or BC4 and WBL = 4 for fixed BC4 only.
Notes:
Read Timing – Clock-to-Data Strobe Relationship
The clock-to-data strobe relationship shown below is applicable in normal operation
mode, that is, when the DLL is enabled and locked.
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Rising data strobe edge parameters:
• tDQSCK (MIN)/(MAX) describes the allowed range for a rising data strobe edge relative to CK.
t
• DQSCK is the actual position of a rising strobe edge relative to CK.
• tQSH describes the data strobe high pulse width.
• tHZ(DQS) DQS strobe going to high, nondrive level (shown in the postamble section
of the figure below).
Falling data strobe edge parameters:
• tQSL describes the data strobe low pulse width.
• tLZ(DQS) DQS strobe going to low, initial drive level (shown in the preamble section
of the figure below).
Figure 125: Clock-to-Data Strobe Relationship
RL measured
to this point
CK_t
CK_c
tDQSCK (MIN)
tDQSCK (MIN)
tDQSCK (MIN)
tDQSCK (MIN)
tHZ(DQS) MIN
tLZ(DQS) MIN
DQS_t, DQS_c
Early Strobe
tQSH
tQSL
tQSH
tQSL
tQSH
tQSL
Bit 0
Bit 1
Bit 2
Bit 3
Bit 4
Bit 5
Bit 6
tRPRE
Bit 7
tRPST
tDQSCK (MAX)
tDQSCK (MAX)
tDQSCK (MAX)
tDQSCK (MAX)
tLZ(DQS) MAX
DQS_t, DQS_c
Late Strobe
Bit 0
tRPRE
Notes:
Bit 1
tQSL
Bit 2
tQSH
Bit 3
Bit 4
Bit 5
Bit 6
tRPST
Bit 7
tQSL
1. Within a burst, the rising strobe edge will vary within tDQSCKi while at the same voltage and temperature. However, when the device, voltage, and temperature variations
are incorporated, the rising strobe edge variance window can shift between tDQSCK
(MIN) and tDQSCK (MAX).
2.
3.
4.
5.
6.
7.
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tQSH
tHZ(DQS) MAX
A timing of this window's right edge (latest) from rising CK_t, CK_c is limited by a device's actual tDQSCK (MAX). A timing of this window's left inside edge (earliest) from rising CK_t, CK_c is limited by tDQSCK (MIN).
Notwithstanding Note 1, a rising strobe edge with tDQSCK (MAX) at T(n) can not be immediately followed by a rising strobe edge with tDQSCK (MIN) at T(n + 1) because other
timing relationships (tQSH, tQSL) exist: if tDQSCK(n + 1) < 0: tDQSCK(n) < 1.0 tCK - (tQSH
(MIN) + tQSL (MIN)) - | tDQSCK(n + 1) |.
The DQS_t, DQS_c differential output HIGH time is defined by tQSH, and the DQS_t,
DQS_c differential output LOW time is defined by tQSL.
tLZ(DQS) MIN and tHZ(DQS) MIN are not tied to tDQSCK (MIN) (early strobe case), and
tLZ(DQS) MAX and tHZ(DQS) MAX are not tied to tDQSCK (MAX) (late strobe case).
The minimum pulse width of READ preamble is defined by tRPRE (MIN).
The maximum READ postamble is bound by tDQSCK (MIN) plus tQSH (MIN) on the left
side and tHZDSQ (MAX) on the right side.
The minimum pulse width of READ postamble is defined by tRPST (MIN).
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
8. The maximum READ preamble is bound by tLZDQS (MIN) on the left side and tDQSCK
(MAX) on the right side.
Read Timing – Data Strobe-to-Data Relationship
The data strobe-to-data relationship is shown below and is applied when the DLL is enabled and locked.
Note: tDQSQ: both rising/falling edges of DQS; no tAC defined.
Rising data strobe edge parameters:
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
Falling data strobe edge parameters:
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
Data valid window parameters:
• tDVWd is the Data Valid Window per device per UI and is derived from [ tQH - tDQSQ]
of each UI on a given DRAM
• tDVWp is the Data Valid Window per pin per UI and is derived [ tQH - tDQSQ] of each
UI on a pin of a given DRAM
Figure 126: Data Strobe-to-Data Relationship
T0
T1
READ
DES
T2
T9
T10
T11
T12
T13
T14
T15
T16
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command3
RL = AL + CL
Address4
Bank,
Col n
tDQSQ
tRPRE
tDQSQ
(MAX)
(MAX)
tRPST
(1nCK)
DQS_t, DQS_c
tQH
DQ2
(Last data )
tQH
DOUT
n
DOUT
n+1
DOUT
n+2
DOUT
n+3
DOUT
n+4
DOUT
n+5
DOUT
n+6
DOUT
n+7
tDVWp
DQ2
(First data no longer)
DOUT
n
DOUT
n+1
DOUT
n+2
DOUT
n+3
DOUT
n+4
DOUT
n+5
DOUT
n+6
DOUT
n+7
tDVWp
DOUT
n
All DQ collectively
DOUT
n+1
DOUT
n+2
DOUT
n+3
DOUT
n+4
DOUT
n+5
tDVWd
Notes:
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DOUT
n+6
DOUT
n+7
tDVWd
Don’t Care
1. BL = 8, RL = 11 (AL = 0, CL = 1), Premable = 1tCK.
2. DOUTn = data-out from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during
READ commands at T0.
5. Output timings are referenced to VDDQ, and DLL on for locking.
6. tDQSQ defines the skew between DQS to data and does not define DQS to clock.
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READ Operation
7. Early data transitions may not always happen at the same DQ. Data transitions of a DQ
can vary (either early or late) within a burst.
tLZ(DQS), tLZ(DQ), tHZ(DQS),
and tHZ(DQ) Calculations
tHZ
and tLZ transitions occur in the same time window as valid data transitions. These
parameters are referenced to a specific voltage level that specifies when the device output is no longer driving tHZ(DQS) and tHZ(DQ), or begins driving tLZ(DQS) and
tLZ(DQ). The figure below shows a method to calculate the point when the device is no
longer driving tHZ(DQS) and tHZ(DQ), or begins driving tLZ(DQS) and tLZ(DQ), by
measuring the signal at two different voltages. The actual voltage measurement points
are not critical as long as the calculation is consistent. tLZ(DQS), tLZ(DQ), tHZ(DQS),
and tHZ(DQ) are defined as singled-ended parameters.
Figure 127: tLZ and tHZ Method for Calculating Transitions and Endpoints
tLZ(DQ):
CK_t, CK_c rising crossing at RL
tHZ(DQ)
tHZ(DQ)
with BL8: CK_t, CK_c rising crossing at RL + 4CK
with BC4: CK_t, CK_c rising crossing at RL + 2CK
CK_t
CK_c
Begin point:
Extrapolated point at VDDQ
DQ
tLZ
tHZ
VDDQ
VDDQ
VSW2
DQ
VSW2
0.7 × VDDQ
0.7 × VDDQ
VSW1
VSW1
0.4 × VDDQ
0.4 × VDDQ
Begin point: Extrapolated point (low level)
Notes:
CCMTD-1406124318-10419
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1. Vsw1 = (0.70 - 0.04) × VDDQ for both tLZ and tHZ.
2. Vsw2 = (0.70 + 0.04) × VDDQ for both tLZ and tHZ.
3. Extrapolated point (low level) = VDDQ/(50 + 34) × 34 = 0.4 × VDDQ
Driver impedance = RZQ/7 = 34Ω
VTT test load = 50Ω to VDDQ.
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READ Operation
tRPRE
Calculation
Figure 128: tRPRE Method for Calculating Transitions and Endpoints
CK_t
VDD /2
CK_c
Single-ended signal provided as background information
VDDQ
DQS_t
0.7 × VDDQ
0.4 × VDDQ
DQS_c
VDDQ
0.7 × VDDQ
0.4 × VDDQ
DQS_t
DQS_t
DQS_c
VDDQ
0.7 × VDDQ
DQS_c
0.4 × VDDQ
Resulting differential signal relevant for tRPRE specification
0.6 × VDDQ
VSW2
0.3 × VDDQ
VSW1
DQS_t, DQS_c
t
RPRE begins (t1)
Notes:
CCMTD-1406124318-10419
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t
RPRE ends (t2)
0V
1. Vsw1 = (0.3 - 0.04) × VDDQ.
2. Vsw2 = (0.30 + 0.04) × VDDQ.
3. DQS_t and DQS_c low level = VDDQ/(50 + 34) × 34 = 0.4 × VDDQ
Driver impedance = RZQ/7 = 34Ω
VTT test load = 50Ω to VDDQ.
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
tRPST
Calculation
Figure 129: tRPST Method for Calculating Transitions and Endpoints
CK_t
VDD /2
CK_c
Single-ended signal provided as background information
VDDQ
0.7 × VDDQ
0.4 × VDDQ
DQS_t
VDDQ
DQS_c
0.7 × VDDQ
0.4 × VDDQ
DQS_c
VDDQ
0.7 × VDDQ
DQS_t
Resulting differential signal relevant fortRPST specification
tRPST
beginst(1)
0V
VSW2
–0.3 × VDDQ
VSW1
–0.6 × VDDQ
DQS_t, DQS_c
tRPST
Notes:
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ends t(2)
1. Vsw1 = (–0.3 - 0.04) × VDDQ.
2. Vsw2 = (–0.30 + 0.04) × VDDQ.
3. DQS_t and DQS_c low level = VDDQ/(50 + 34) × 34 = 0.4 × VDDQ
Driver impedance = RZQ/7 = 34Ω
VTT test load = 50Ω to VDDQ.
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
READ Burst Operation
DDR4 READ commands support bursts of BL8 (fixed), BC4 (fixed), and BL8/BC4 onthe-fly (OTF); OTF uses address A12 to control OTF when OTF is enabled:
• A12 = 0, BC4 (BC4 = burst chop)
• A12 = 1, BL8
READ commands can issue precharge automatically with a READ with auto precharge
command (RDA), and is enabled by A10 HIGH:
• READ command with A10 = 0 (RD) performs standard read, bank remains active after
READ burst.
• READ command with A10 = 1 (RDA) performs read with auto precharge, bank goes in
to precharge after READ burst.
Figure 130: READ Burst Operation, RL = 11 (AL = 0, CL = 11, BL8)
T0
T1
T2
Ta0
Ta1
Ta2
Ta3
Ta4
Ta5
Ta6
Ta7
Ta8
Ta9
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
Bank Group
Address
BGa
Address
Bank
col n
tRPRE
tRPST
DQS_t
DQS_c
DO
n
DQ
DO
n+ 1
DO
n+ 2
DO
n+ 3
DO
n+ 4
DO
n+ 5
DO
n+ 6
DO
n+ 7
CL = 11
RL = AL + CL
Time Break
Notes:
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Transitioning Data
Don’t Care
1. BL8, RL = 0, AL = 0, CL = 11, Preamble = 1tCK.
2. DO n = data-out from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
command at T0.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
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READ Operation
Figure 131: READ Burst Operation, RL = 21 (AL = 10, CL = 11, BL8)
T0
T1
Ta0
Ta1
Ta2
Ta3
Tb0
Tb1
Tb2
Tb3
Tb4
Tb5
Tb6
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
Bank Group
Address
BGa
Address
Bank
col n
tRPRE
tRPST
DQS_t
DQS_c
DO
n
DQ
AL = 10
DO
n+ 1
DO
n+ 2
DO
n+ 3
DO
n+ 4
DO
n+ 5
DO
n+ 6
DO
n+ 7
CL = 11
RL = AL + CL
Time Break
Notes:
CCMTD-1406124318-10419
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Transitioning Data
Don’t Care
1. BL8, RL = 21, AL = (CL - 1), CL = 11, Preamble = 1tCK.
2. DO n = data-out from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
command at T0.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
READ Operation Followed by Another READ Operation
Figure 132: Consecutive READ (BL8) with 1tCK Preamble in Different Bank Group
T0
T1
READ
DES
T3
T4
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T2
CK_c
CK_t
Command
DES
tCCD_S
=4
Bank Group
Address
BGa
BGb
Address
Bank
Col n
Bank
Col b
tRPRE
tRPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DO
b
DO
b+1
DO
b+2
DO
b+3
DO
b+4
DO
b+5
DO
b+6
DO
b+7
RL = 11
Time Break
Transitioning Data
Don’t Care
1. BL8, AL = 0, CL = 11, Preamble = 1tCK.
2. DO n (or b) = data-out from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
commands at T0 and T4.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
Notes:
Figure 133: Consecutive READ (BL8) with 2tCK Preamble in Different Bank Group
T0
T1
READ
DES
T3
T4
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T2
CK_c
CK_t
Command
DES
tCCD_S
=4
Bank Group
Address
BGa
BGb
Address
Bank
Col n
Bank
Col b
tRPRE
tRPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DO
b
DO
b+1
DO
b+2
DO
b+3
DO
b+4
DO
b+5
DO
b+6
DO
b+7
RL = 11
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL8, AL = 0, CL = 11, Preamble = 2tCK.
2. DO n (or b) = data-out from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
commands at T0 and T4.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
203
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Figure 134: Nonconsecutive READ (BL8) with 1tCK Preamble in Same or Different Bank Group
T0
T1
READ
DES
T2
T3
T4
DES
DES
T5
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
DES
tCCD_S/L
=5
Bank Group
Address
BGa
BGb
Address
Bank
Col n
Bank
Col b
tRPRE
tRPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DO
b
DO
b+1
DO
b+2
DO
b+3
DO
b+4
DO
b+5
DO
b+6
DO
b+7
RL = 11
Time Break
Don’t Care
Transitioning Data
1. BL8, AL = 0, CL = 11, Preamble = 1tCK, tCCD_S/L = 5.
2. DO n (or b) = data-out from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
commands at T0 and T5.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
Notes:
Figure 135: Nonconsecutive READ (BL8) with 2tCK Preamble in Same or Different Bank Group
T0
T1
READ
DES
T5
T6
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T2
CK_c
CK_t
Command
DES
tCCD_S/L
=6
Bank Group
Address
BGa
BGa or
BGb
Address
Bank
Col n
Bank
Col b
tRPRE
tRPRE
tRPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DO
b
DO
b+1
DO
b+2
DO
b+3
DO
b+4
DO
b+5
DO
b+6
DO
b+7
RL = 11
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL8, AL = 0, CL = 11, Preamble = 2tCK, tCCD_S/L = 6.
2. DO n (or b) = data-out from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during
READ commands at T0 and T6.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
6. 6 tCCD_S/L = 5 isn’t allowed in 2tCK preamble mode.
204
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Figure 136: READ (BC4) to READ (BC4) with 1tCK Preamble in Different Bank Group
T0
T1
READ
DES
T3
T4
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T2
CK_c
CK_t
Command
DES
tCCD_S
=4
Bank Group
Address
BGa
BGb
Address
Bank
Col n
Bank
Col b
tRPRE
tRPST
tRPRE
tRPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
b
DO
b+1
DO
b+2
DO
b+3
RL = 11
Time Break
Transitioning Data
Don’t Care
1. BL8, AL = 0, CL = 11, Preamble = 1tCK.
2. DO n (or b) = data-out from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during READ
commands at T0 and T4.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
Notes:
Figure 137: READ (BC4) to READ (BC4) with 2tCK Preamble in Different Bank Group
T0
T1
READ
DES
T3
T4
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T2
CK_c
CK_t
Command
DES
tCCD_S
=4
Bank Group
Address
BGa
BGb
Address
Bank
Col n
Bank
Col b
tRPRE
tRPRE
tRPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
b
DO
b+1
DO
b+2
DO
b+3
RL = 11
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL8, AL = 0, CL = 11, Preamble = 2tCK.
2. DO n (or b) = data-out from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during READ
commands at T0 and T4.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
205
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Figure 138: READ (BL8) to READ (BC4) OTF with 1tCK Preamble in Different Bank Group
T0
T1
READ
DES
T3
T4
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T2
CK_c
CK_t
Command
DES
tCCD_S
=4
Bank Group
Address
BGa
BGb
Address
Bank
Col n
Bank
Col b
t RPRE
tRPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DO
b
DO
b+1
DO
b+2
DO
b+3
RL = 11
Time Break
Notes:
Transitioning Data
Don’t Care
1. BL = 8, AL = 0, CL = 11, Preamble = 1tCK.
2. DO n (or b) = data-out from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by MR0[1:0] = 01 and A12 = 1 during READ commands at T0. BC4
setting activated by MR0[1:0] = 01 and A12 = 0 during READ commands at T4.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
Figure 139: READ (BL8) to READ (BC4) OTF with 2tCK Preamble in Different Bank Group
T0
T1
READ
DES
T2
T3
T4
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
DES
tCCD_S
=4
Bank Group
Address
BGa
BGb
Address
Bank
Col n
Bank
Col b
tRPRE
tRPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DO
b
DO
b+1
DO
b+2
DO
b+3
RL = 11
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8, AL =0, CL = 11, Preamble = 2tCK.
2. DO n (or b) = data-out from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by MR0[1:0] = 01 and A12 = 1 during READ commands at T0. BC4
setting activated by MR0[1:0] = 01 and A12 = 0 during READ commands at T4.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
206
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Figure 140: READ (BC4) to READ (BL8) OTF with 1tCK Preamble in Different Bank Group
T0
T1
READ
DES
T2
T3
T4
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
DES
tCCD_S
Bank Group
Address
Address
=4
BGa
BGb
Bank
Col n
Bank
Col b
tRPST
tRPRE
tRPST
tRPRE
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
b
DO
b+1
DO
b+2
DO
b+3
DO
b+4
DO
b+5
DO
b+6
DO
b+7
RL = 11
Time Break
Notes:
Transitioning Data
Don’t Care
1. BL = 8, AL =0, CL = 11, Preamble = 1tCK.
2. DO n (or b) = data-out from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during READ commands at T0. BL8
setting activated by MR0[1:0] = 01 and A12 = 1 during READ commands at T4.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
Figure 141: READ (BC4) to READ (BL8) OTF with 2tCK Preamble in Different Bank Group
T0
T1
READ
DES
T2
T3
T4
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
tCCD_S
Bank Group
Address
Address
=4
BGa
BGb
Bank
Col n
Bank
Col b
tRPST
tRPRE
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
b
DO
b+1
DO
b+2
DO
b+3
DO
b+4
DO
b+5
DO
b+6
DO
b+7
RL = 11
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8, AL = 0, CL = 11, Preamble = 2tCK.
2. DO n (or b) = data-out from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during READ commands at T0. BL8
setting activated by MR0[1:0] = 01 and A12 = 1 during READ commands at T4.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
207
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
READ Operation Followed by WRITE Operation
Figure 142: READ (BL8) to WRITE (BL8) with 1tCK Preamble in Same or Different Bank Group
T0
T1
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T22
CK_c
CK_t
Command
READ
DES
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 2 tCK
Bank Group
Address
Address
tWTR
4 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPRE
tWPST
tWPRE
tRPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
WL = 9
Time Break
Notes:
Transitioning Data
Don’t Care
1. BL = 8, RL = 11 (CL = 11, AL = 0), READ preamble = 1tCK, WL = 9 (CWL = 9, AL = 0), WRITE
preamble = 1tCK.
2. DO n = data-out from column n; DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
commands at T0 and WRITE commands at T8.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
Figure 143: READ (BL8) to WRITE (BL8) with 2tCK Preamble in Same or Different Bank Group
T0
T1
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
T22
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
READ
READ to WRITE command delay
= RL +BL/2 - WL + 3 tCK
Bank Group
Address
Address
4 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
t
t
RPRE
RPST
t
t
WPRE
t
WR
t
WTR
WPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
WL = 10
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8, RL = 11 (CL = 11, AL = 0), READ preamble = 2tCK, WL = 10 (CWL = 9+1 [see Note
5], AL = 0), WRITE preamble = 2tCK.
2. DO n = data-out from column n; DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
208
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
commands at T0 and WRITE commands at T8.
5. When operating in 2tCK WRITE preamble mode, CWL may need to be programmed to a
value at least 1 clock greater than the lowest CWL setting.
6. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
Figure 144: READ (BC4) OTF to WRITE (BC4) OTF with 1tCK Preamble in Same or Different Bank
Group
T0
T1
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
READ
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 2 tCK
Bank Group
Address
Address
tWTR
4 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPRE
tRPST
tWPST
tWPRE
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
WL = 9
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BC = 4, RL = 11 (CL = 11, AL = 0), READ preamble = 1tCK, WL = 9 (CWL = 9, AL = 0),
WRITE preamble = 1tCK.
2. DO n = data-out from column n; DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 (OTF) setting activated by MR0[1:0] = 01 and A12 = 0 during READ commands at T0
and WRITE commands at T6.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
209
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Figure 145: READ (BC4) OTF to WRITE (BC4) OTF with 2tCK Preamble in Same or Different Bank
Group
T0
T1
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
READ
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 3 tCK
Bank Group
Address
Address
tWTR
4 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPRE
tWPST
tWPRE
tRPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
WL = 10
Time Break
Notes:
Transitioning Data
Don’t Care
1. BC = 4, RL = 11 (CL = 11, AL = 0), READ preamble = 2tCK, WL = 10 (CWL = 9 + 1 [see Note
5], AL = 0), WRITE preamble = 2tCK.
2. DO n = data-out from column n; DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 (OTF) setting activated by MR0[1:0] = 01 and A12 = 0 during READ commands at T0
and WRITE commands at T6.
5. When operating in 2tCK WRITE preamble mode, CWL may need to be programmed to a
value at least 1 clock greater than the lowest CWL setting.
6. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
Figure 146: READ (BC4) Fixed to WRITE (BC4) Fixed with 1tCK Preamble in Same or Different Bank
Group
T0
T1
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T19
T20
DES
DES
CK_c
CK_t
Command
READ
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 2 tCK
Bank Group
Address
Address
tWTR
2 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPRE
tRPST
tWPST
tWPRE
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
WL = 9
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BC = 4, RL = 11 (CL = 11, AL = 0), READ preamble = 1tCK, WL = 9 (CWL = 9, AL = 0),
WRITE preamble = 1tCK.
2. DO n = data-out from column n; DI b = data-in from column b.
210
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 (fixed) setting activated by MR0[1:0] = 01.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
Figure 147: READ (BC4) Fixed to WRITE (BC4) Fixed with 2tCK Preamble in Same or Different Bank
Group
T0
T1
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
READ
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 3 tCK
Bank Group
Address
Address
tWTR
2 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPRE
tRPST
tWPST
tWPRE
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
WL = 10
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BC = 4, RL = 11 (CL = 11, AL = 0), READ preamble = 2tCK, WL = 9 (CWL = 9 + 1 [see Note
5], AL = 0), WRITE preamble = 2tCK.
2. DO n = data-out from column n; DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 (fixed) setting activated by MR0[1:0] = 10.
5. When operating in 2tCK WRITE preamble mode, CWL may need to be programmed to a
value at least 1 clock greater than the lowest CWL setting.
6. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
211
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Figure 148: READ (BC4) to WRITE (BL8) OTF with 1tCK Preamble in Same or Different Bank Group
T0
T1
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T20
CK_c
CK_t
Command
READ
DES
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 2 tCK
Bank Group
Address
Address
tWTR
4 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPST
tRPRE
tWPST
tWPRE
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
WL = 9
Time Break
Notes:
Transitioning Data
Don’t Care
1. BL = 8, RL = 11 (CL = 11, AL = 0), READ preamble = 1tCK, WL = 9 (CWL = 9, AL = 0), WRITE
preamble = 1tCK.
2. DO n = data-out from column n; DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE commands at T0.
BL8 setting activated by MR0[1:0] = 01 and A12 = 1 during READ commands at T6.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
Figure 149: READ (BC4) to WRITE (BL8) OTF with 2tCK Preamble in Same or Different Bank Group
T0
T1
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
READ
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 3 tCK
Bank Group
Address
Address
tWTR
4 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPST
tRPRE
tWPST
tWPRE
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
WL = 10
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8, RL = 11 (CL = 11, AL = 0), READ preamble = 2tCK, WL = 10 (CWL = 9 + 1 [see Note
5], AL = 0), WRITE preamble = 2tCK.
2. DO n = data-out from column n; DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE commands at T0.
BL8 setting activated by MR0[1:0] = 01 and A12 = 1 during READ commands at T6.
212
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
Figure 150: READ (BL8) to WRITE (BC4) OTF with 1tCK Preamble in Same or Different Bank Group
T0
T1
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T22
CK_c
CK_t
Command
READ
DES
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 2 tCK
Bank Group
Address
Address
tWTR
4 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPRE
tWPST
tWPRE
tRPST
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
WL = 9
Time Break
Notes:
Transitioning Data
Don’t Care
1. BL = 8, RL = 11 (CL = 11, AL = 0), READ preamble = 1tCK, WL = 9 (CWL = 9, AL = 0), WRITE
preamble = 1tCK.
2. DO n = data-out from column n; DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by MR0[1:0] = 01 and A12 = 1 during READ commands at T0.
BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE commands at T8.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
Figure 151: READ (BL8) to WRITE (BC4) OTF with 2tCK Preamble in Same or Different Bank Group
T0
T1
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
T22
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
READ
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 3 tCK
Bank Group
Address
Address
4 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPRE
tRPST
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
RL = 11
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
WL = 10
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8, RL = 11 (CL = 11, AL = 0), READ preamble = 2tCK, WL = 10 (CWL = 9 + 1 [see Note
5], AL = 0), WRITE preamble = 2tCK.
2. DO n = data-out from column n; DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
213
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
4. BL8 setting activated by MR0[1:0] = 01 and A12 = 1 during READ commands at T0.
BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE commands at T8.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
READ Operation Followed by PRECHARGE Operation
The minimum external READ command to PRECHARGE command spacing to the same
bank is equal to AL + tRTP with tRTP being the internal READ command to PRECHARGE
command delay. Note that the minimum ACT to PRE timing, tRAS, must be satisfied as
well. The minimum value for the internal READ command to PRECHARGE command
delay is given by tRTP (MIN) = MAX (4 × nCK, 7.5ns). A new bank ACTIVATE command
may be issued to the same bank if the following two conditions are satisfied simultaneously:
• The minimum RAS precharge time (tRP [MIN]) has been satisfied from the clock at
which the precharge begins.
• The minimum RAS cycle time (tRC [MIN]) from the previous bank activation has been
satisfied.
Figure 152: READ to PRECHARGE with 1tCK Preamble
T0
T1
T2
T3
T6
T7
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
READ
DES
DES
DES
PRE
DES
DES
DES
DES
DES
DES
DES
DES
ACT
DES
DES
DES
CK_c
CK_t
Command
Bank Group
Address
Address
BGa
or BGb
BGa
Bank a
Col n
BGa
Bank a
(or all)
tRTP
Bank a
Row b
tRP
RL = AL + CL
BC4 Opertaion
DQS_t,
DQS_c
DQ
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n
DO
n+1
DO
n+2
DO
n+3
BL8 Opertaion
DQS_t,
DQS_c
DQ
DO
n+4
DO
n+5
DO
n+6
DO
n+7
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. RL = 11 (CL = 11, AL = 0 ), Preamble = 1tCK, tRTP = 6, tRP = 11.
2. DO n = data-out from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. The example assumes that tRAS (MIN) is satisfied at the PRECHARGE command time (T7)
and that tRC (MIN) is satisfied at the next ACTIVATE command time (T18).
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
214
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Figure 153: READ to PRECHARGE with 2tCK Preamble
T0
T1
T2
T3
T6
T7
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
READ
DES
DES
DES
PRE
DES
DES
DES
DES
DES
DES
DES
DES
ACT
DES
DES
DES
CK_c
CK_t
Command
Bank Group
Address
BGa or
BGb
BGa
Bank a
Col n
Address
BGa
Bank a
(or all)
Bank a
Row b
tRTP
tRP
RL = AL + CL
BC4 Opertaion
DQS_t,
DQS_c
DQ
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n
DO
n+1
DO
n+2
DO
n+3
BL8 Opertaion
DQS_t,
DQS_c
DQ
DO
n+4
DO
n+5
DO
n+6
DO
n+7
Time Break
Notes:
Transitioning Data
Don’t Care
1. RL = 11 (CL = 11, AL = 0 ), Preamble = 2tCK, tRTP = 6, tRP = 11.
2. DO n = data-out from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. The example assumes that tRAS (MIN) is satisfied at the PRECHARGE command time (T7)
and that tRC (MIN) is satisfied at the next ACTIVATE command time (T18).
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
Figure 154: READ to PRECHARGE with Additive Latency and 1tCK Preamble
T0
T1
T2
T3
T10
T11
T12
T13
T16
T19
T20
T21
T22
T23
T24
T25
T26
T27
DES
READ
DES
DES
DES
DES
DES
DES
PRE
DES
DES
DES
DES
DES
DES
DES
DES
ACT
CK_c
CK_t
Command
Bank Group
Address
Address
BGa or
BGb
BGa
Bank a
Col n
BGa
Bank a
(or all)
AL = CL - 2 = 9
tRTP
Bank a
Row b
tRP
CL = 11
BC4 Opertaion
DQS_t,
DQS_c
DQ
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n
DO
n+1
DO
n+2
DO
n+3
BL8 Opertaion
DQS_t,
DQS_c
DQ
DO
n+4
DO
n+5
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
DO
n+6
DO
n+7
Transitioning Data
Don’t Care
1. RL =20 (CL = 11, AL = CL - 2), Preamble = 1tCK, tRTP = 6, tRP = 11.
2. DO n = data-out from column n.
215
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. The example assumes that tRAS (MIN) is satisfied at the PRECHARGE command time
(T16) and that tRC (MIN) is satisfied at the next ACTIVATE command time (T27).
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
Figure 155: READ with Auto Precharge and 1tCK Preamble
T0
T1
T2
T3
T6
T7
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
RDA
DES
DES
DES
PRE
DES
DES
DES
DES
DES
DES
DES
DES
ACT
DES
DES
DES
CK_c
CK_t
Command
Bank Group
Address
Address
BGa or
BGb
BGa
Bank a
Col n
BGa
Bank a
Col n
tRTP
Bank a
Row b
tRP
RL = AL + CL
BC4 Opertaion
DQS_t,
DQS_c
DQ
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n
DO
n+1
DO
n+2
DO
n+3
BL8 Opertaion
DQS_t,
DQS_c
DQ
DO
n+4
DO
n+5
DO
n+6
DO
n+7
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. RL = 11 (CL = 11, AL = 0 ), Preamble = 1tCK, tRTP = 6, tRP = 11.
2. DO n = data-out from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. tRTP = 6 setting activated by MR0[A11:9 = 001].
5. The example assumes that tRC (MIN) is satisfied at the next ACTIVATE command time
(T18).
6. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
216
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Figure 156: READ with Auto Precharge, Additive Latency, and 1tCK Preamble
T0
T1
T2
T3
T10
T11
T12
T13
T16
T19
T20
T21
T22
T23
T24
T25
T26
T27
DES
RDA
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
ACT
CK_c
CK_t
Command
Bank Group
Address
BGa
BGa
Bank a
Col n
Address
Bank a
Row b
tRTP
AL = CL - 2 = 9
tRP
CL = 11
BC4 Opertaion
DQS_t,
DQS_c
DQ
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n
DO
n+1
DO
n+2
DO
n+3
BL8 Opertaion
DQS_t,
DQS_c
DQ
DO
n+4
DO
n+5
DO
n+6
Time Break
Notes:
DO
n+7
Transitioning Data
Don’t Care
1. RL = 20 (CL = 11, AL = CL - 2), Preamble = 1tCK, tRTP = 6, tRP = 11.
2. DO n = data-out from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. tRTP = 6 setting activated by MR0[11:9] = 001.
5. The example assumes that tRC (MIN) is satisfied at the next ACTIVATE command time
(T27).
6. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
READ Operation with Read Data Bus Inversion (DBI)
Figure 157: Consecutive READ (BL8) with 1tCK Preamble and DBI in Different Bank Group
T0
T1
READ
DES
T2
T3
T4
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
DES
tCCD_S
=4
Bank Group
Address
BGa
BGb
Address
Bank
Col n
Bank
Col b
tRPRE
tRPST
DQS_t,
DQS_c
RL = 11 + 2 (Read DBI adder)
DQ
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DO
b
DO
b+1
DO
b+2
DO
DO
DO
b + 3 b +4 _ b + 5
DO
b+6
DO
b+7
DBI
n
DBI
n+1
DBI
n+2
DBI
n+3
DBI
n+4
DBI
n+5
DBI
n+6
DBI
n+7
DBI
b
DBI
b+1
DBI
b+2
DBI
b+3
DBI
b+6
DBI
b+7
RL = 11 + 2 (Read DBI adder)
DBI_n
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
DBI
DBI
b+4 b+5
Transitioning Data
Don’t Care
1. BL = 8, AL = 0, CL = 11, Preamble = 1tCK, RL = 11 + 2 (Read DBI adder).
217
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
2. DO n (or b) = data-out from column n (or b); DBI n (or b) = data bus inversion from column n (or b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
commands at T0 and T4.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Enable.
READ Operation with Command/Address Parity (CA Parity)
Figure 158: Consecutive READ (BL8) with 1tCK Preamble and CA Parity in Different Bank Group
T0
T1
READ
DES
T2
T3
T4
T7
T8
T13
T14
T15
T16
T17
T18
T19
T20
T21
T20
T21
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
DES
tCCD_S
=4
Bank Group
Address
BGa
BGb
Address
Parity
Bank
Col n
Bank
Col b
tRPRE
tRPST
DQS_t,
DQS_c
RL = 15
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DO
b
DO
b+1
DO
b+2
DO
DO
DO
b + 3 b +4 _ b + 5
DO
b+6
DO
b+7
RL = 15
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8, AL = 0, CL = 11, PL = 4, (RL = CL + AL + PL = 15), Preamble = 1tCK.
2. DO n (or b) = data-out from column n (or b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[A1:A0 = 00] or MR0[A1:A0 = 01] and A12 = 1 during
READ commands at T0 and T4.
5. CA parity = Enable, CS to CA latency = Disable, Read DBI = Disable.
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Figure 159: READ (BL8) to WRITE (BL8) with 1tCK Preamble and CA Parity in Same or Different Bank
Group
T0
T1
T7
T8
T9
T14
T15
T16
T17
T18
T19
T20
T21
T22
T23
T24
T25
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T26
CK_c
CK_t
Command
READ
DES
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 2 tCK
Bank Group
Address
Address
Parity
4 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPRE
tRPST
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
RL = 15
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
WL = 13
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8, AL = 0, CL = 11, PL = 4, (RL = CL + AL + PL = 15), READ preamble = 1tCK, CWL = 9,
AL = 0, PL = 4, (WL = CL + AL + PL = 13), WRITE preamble = 1tCK.
2. DO n = data-out from column n, DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
commands at T0 and WRITE command at T8.
5. CA parity = Enable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
219
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
READ Followed by WRITE with CRC Enabled
Figure 160: READ (BL8) to WRITE (BL8 or BC4: OTF) with 1tCK Preamble and Write CRC in Same or
Different Bank Group
T0
T1
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
READ
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T22
CK_c
CK_t
Command
DES
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 2 tCK
Bank Group
Address
Address
4 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPRE
tRPST
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
RL = 11
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
CRC
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
CRC
DQ x4,
READ: BL = 8,
WRITE: BC = 4 (OTF)
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
CRC
DQ x8/X16,
READ: BL = 8,
WRITE: BC = 4 (OTF)
DO
n
DO
n+1
DO
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
CRC
DQ x4,
BL = 8
CRC
WL = 9
DQ x8/X16,
BL = 8
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
CRC
Don’t Care
1. BL = 8 (or BC = 4: OTF for Write), RL = 11 (CL = 11, AL = 0), READ preamble = 1tCK, WL =
9 (CWL = 9, AL = 0), WRITE preamble = 1tCK.
2. DO n = data-out from column n, DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
commands at T0 and WRITE commands at T8.
5. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE commands at T8.
6. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Enable.
220
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
Figure 161: READ (BC4: Fixed) to WRITE (BC4: Fixed) with 1tCK Preamble and Write CRC in Same or
Different Bank Group
T0
T1
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
READ
tWR
READ to WRITE command delay
= RL +BL/2 - WL + 2 tCK
Bank Group
Address
Address
tWTR
2 Clocks
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tRPRE
tWPST
tWPRE
tRPST
DQS_t,
DQS_c
RL = 11
DQ x4,
BC = 4 (Fixed)
DO
n
DO
n+1
DO
n+2
DO
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
CRC
DO
n
DO
n+1
DO
n+2
DO
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
CRC
CRC
WL = 9
DQ x8/X16,
BC = 4 (Fixed)
Time Break
Notes:
Transitioning Data
Don’t Care
1. BC = 4 (Fixed), RL = 11 (CL = 11, AL = 0), READ preamble = 1tCK, WL = 9 (CWL = 9, AL =
0), WRITE preamble = 1tCK.
2. DO n = data-out from column n, DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 10.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Enable.
READ Operation with Command/Address Latency (CAL) Enabled
Figure 162: Consecutive READ (BL8) with CAL (3tCK) and 1tCK Preamble in Different Bank Group
T0
T1
T2
T3
T4
T5
T6
T7
T8
T13
T14
T15
T17
T18
T19
T21
T22
T23
DES
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
tCAL
Command
w/o CS_n
DES
tCAL
=3
DES
READ
DES
DES
=3
CS_n
tCCD_S
Bank Group
Address
Address
=4
BGa
BGb
Bank
Col n
Bank
Col b
tRPST
tRPRE
DQS_t,
DQS_c
RL = 11
DI
n
DQ
DI
n+1
DI
n+2
DI
n+5
DI
n+6
DI
n+7
DI
b
DI
b+1
DI
b+2
DI
b+5
DI
b+6
DI
b+7
RL = 11
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8, RL = 11 (CL = 11, AL = 0), READ preamble = 1tCK.
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8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
2. DI n (or b) = data-in from column n (or b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
commands at T3 and T7.
5. CA parity = Disable, CS to CA latency = Enable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
6. Enabling CAL mode does not impact ODT control timings. The same timing relationship
relative to the command/address bus as when CAL is disabled should be maintained.
Figure 163: Consecutive READ (BL8) with CAL (4tCK) and 1tCK Preamble in Different Bank Group
T0
T1
T2
T3
T4
T5
READ
DES
DES
T6
T7
T8
T14
T15
T16
T18
T19
T21
T22
T23
T24
READ
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
tCAL
Command
w/o CS_n
DES
tCAL
=4
DES
=4
DES
CS_n
tCCD_S
Bank Group
Address
Address
=4
BGa
BGb
Bank
Col n
Bank
Col b
tRPST
tRPRE
DQS_t,
DQS_c
RL = 11
DI
n
DQ
DI
n+1
DI
n+2
DI
n+5
DI
n+6
DI
n+7
DI
b
DI
b+1
DI
b+2
DI
b+5
DI
b+6
DI
b+7
RL = 11
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8, RL = 11 (CL = 11, AL = 0), READ preamble = 1tCK.
2. DI n (or b) = data-in from column n (or b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ
commands at T3 and T8.
5. CA parity = Disable, CS to CA latency = Enable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
6. Enabling CAL mode does not impact ODT control timings. The same timing relationship
relative to the command/address bus as when CAL is disabled should be maintained.
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
WRITE Operation
Write Timing Definitions
The write timings shown in the following figures are applicable in normal operation
mode, that is, when the DLL is enabled and locked.
Write Timing – Clock-to-Data Strobe Relationship
The clock-to-data strobe relationship is shown below and is applicable in normal operation mode, that is, when the DLL is enabled and locked.
Rising data strobe edge parameters:
• tDQSS (MIN) to tDQSS (MAX) describes the allowed range for a rising data strobe edge
relative to CK.
• tDQSS is the actual position of a rising strobe edge relative to CK.
• tDQSH describes the data strobe high pulse width.
• tWPST strobe going to HIGH, nondrive level (shown in the postamble section of the
graphic below).
Falling data strobe edge parameters:
• tDQSL describes the data strobe low pulse width.
• tWPRE strobe going to LOW, initial drive level (shown in the preamble section of the
graphic below).
CCMTD-1406124318-10419
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 164: Write Timing Definition
CK_c
CK_t
Command3
T0
T1
T2
T7
T8
T9
T10
WRITE
DES
DES
DES
DES
DES
DES
T11
T12
T13
T14
DES
DES
DES
DES
WL = AL + CWL
Address4
Bank,
Col n
tDQSS tDSH
tDQSS
tDSH
tDSH
tDSH
tWPSTaa
tWPRE(1nCK)
(MIN)
DQS_t, DQS_c
tDQSL
tDQSH
tDQSH
tDQSL
tDQSH
tDQSH
tDQSL
tDQSH
tDQSL
tDSS
DQ2
tDSS
DIN
n
tDSS
DIN
n+ 2
tDSS
DIN
n+ 4
DIN
n+ 3
tDSH
tDQSS
tDQSL
(MIN)
DIN
n+ 6
tDSH
DIN
n+ 7
tDSH
tDSH
tWPST
tWPRE(1nCK)
(nominal)
(MIN)
tDSS
(MIN)
DQS_t, DQS_c
tDQSL
tDQSH
tDQSH
tDQSL
tDQSH
tDQSL
tDQSH
tDQSL
tDQSH
tDQSL
(MIN)
tDSS
DQ2
tDSS
tDSS
DIN
n+ 2
DIN
n
DIN
n+ 3
tDSS
DIN
n+ 4
(MIN)
tDSS
DIN
n+ 6
DIN
n+ 7
tDQSS
tDSH
tDQSS
tDSH
tDSH
tDSH
tWPRE(1nCK)
(MAX)
tWPST
(MIN)
tDQSL
(MIN)
DQS_t, DQS_c
tDQSL
tDQSH
tDQSH
tDQSL
tDQSH
tDQSL
tDQSH
tDQSL
tDQSH
(MIN)
tDSS
tDSS
DIN
n
DQ2
tDSS
DIN
n+ 2
DIN
n+ 3
tDSS
DIN
n+ 4
tDSS
DIN
n+ 6
DIN
n+ 7
DM_n
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL8, WL = 9 (AL = 0, CWL = 9).
2. DINn = data-in from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE command at T0.
5. tDQSS must be met at each rising clock edge.
224
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
tWPRE
Calculation
Figure 165: tWPRE Method for Calculating Transitions and Endpoints
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Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
W :35(HQGV W
9
1. Vsw1 = (0.1) × VIH,diff,DQS.
2. Vsw2 = (0.9) × VIH,diff,DQS.
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
tWPST
Calculation
Figure 166: tWPST Method for Calculating Transitions and Endpoints
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Notes:
1. Vsw1 =(0.9) × VIL,diff,DQS.
2. Vsw2 = (0.1) × VIL,diff,DQS.
Write Timing – Data Strobe-to-Data Relationship
The DQ input receiver uses a compliance mask (Rx) for voltage and timing as shown in
the figure below. The receiver mask (Rx mask) defines the area where the input signal
must not encroach in order for the DRAM input receiver to be able to successfully capture a valid input signal. The Rx mask is not the valid data-eye. TdiVW and V diVW define
the absolute maximum Rx mask.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 167: Rx Compliance Mask
VDIVW
Rx Mask
VCENTDQ,midpoint
TdiVW
VCENTDQ,midpoint is defined as the midpoint between the largest V REFDQ voltage level and
the smallest V REFDQ voltage level across all DQ pins for a given DRAM. Each DQ pin's
VREFDQ is defined by the center (widest opening) of the cumulative data input eye as depicted in the following figure. This means a DRAM's level variation is accounted for
within the DRAM Rx mask. The DRAM V REFDQ level will be set by the system to account
for RON and ODT settings.
Figure 168: VCENT_DQ VREFDQ Voltage Variation
DQx
DQy
(smallest VREFDQ Level)
DQz
(largest VREFDQ Level)
VCENTDQz
VCENTDQx
VCENTDQ,midpoint
VCENTDQy
VREF variation
(component)
The following figure shows the Rx mask requirements both from a midpoint-to-midpoint reference (left side) and from an edge-to-edge reference. The intent is not to add
any new requirement or specification between the two but rather how to convert the
relationship between the two methodologies. The minimum data-eye shown in the
composite view is not actually obtainable due to the minimum pulse width requirement.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 169: Rx Mask DQ-to-DQS Timings
DQS, DQs Data-In at DRAM Ball
DQS, DQs Data-In at DRAM Ball
Rx Mask
Rx Mask – Alternative View
DQS_c
DQS_c
DQS_t
DQS_t
VdiVW
DRAMa
DQx–z
Rx Mask
DRAMa
DQx–z
VdiVW
0.5 × TdiVW 0.5 × TdiVW
0.5 × TdiVW 0.5 × TdiVW
Rx Mask
TdiVW
TdiVW
tDQS2DQ
+0.5 × TdiVW
DRAMb
DQy
Rx Mask
VdiVW
Rx Mask
TdiVW
tDQ2DQ
VdiVW
DRAMb
DQz
tDQ2DQ
Rx Mask
DRAMb
DQz
Rx Mask
VdiVW
DRAMb
DQy
VdiVW
tDQS2DQ
TdiVW
tDQ2DQ
tDQ2DQ
Rx Mask
TdiVW
tDQ2DQ
VdiVW
DRAMc
DQy
Rx Mask
DRAMc
DQz
DRAMc
DQy
Rx Mask
TdiVW
VdiVW
Rx Mask
VdiVW
DRAMc
DQz
+0.5 × TdiVW
VdiVW
tDQS2DQ
tDQS2DQ
tDQ2DQ
Notes:
1. DQx represents an optimally centered mask.
DQy represents earliest valid mask.
DQz represents latest valid mask.
2. DRAMa represents a DRAM without any DQS/DQ skews.
DRAMb represents a DRAM with early skews (negative tDQS2DQ).
DRAMc represents a DRAM with delayed skews (positive tDQS2DQ).
3. This figure shows the skew allowed between DRAM-to-DRAM and between DQ-to-DQ
for a DRAM. Signals assume data is center-aligned at DRAM latch.
TdiPW is not shown; composite data-eyes shown would violate TdiPW.
VCENTDQ,midpoint is not shown but is assumed to be midpoint of VdiVW.
The previous figure shows the basic Rx mask requirements. Converting the Rx mask requirements to a classical DQ-to-DQS relationship is shown in the following figure. It
should become apparent that DRAM write training is required to take full advantage of
the Rx mask.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 170: Rx Mask DQ-to-DQS DRAM-Based Timings
DQS, DQs Data-In at DRAM Ball
DQS, DQs Data-In at DRAM Ball
Rx Mask vs. Composite Data-Eye
Rx Mask vs. UI Data-Eye
DQS_c
DQS_c
DQS_t
DQS_t
tDSx
Rx Mask
VdiVW
DRAMa
DQx , y, z
TdiVW
DRAMa
DQx–z
TdiPW
tDHx
Rx Mask
VdiVW
TdiPW
TdiVW
TdiPW
tDSy
tDHy
DRAMb
DQz
Rx Mask
TdiVW
tDQ2DQ
Rx Mask
tDQ2DQ
TdiVW
VdiVW
DRAMb
DQy
VdiVW
*Skew
TdiPW
tDSz
tDHz
DRAMc
DQz
tDQ2DQ
Rx Mask
Rx Mask
TdiVW
TdiVW
tDQ2DQ
VdiVW
DRAMc
DQy
VdiVW
*Skew
TdiPW
Notes:
1. DQx represents an optimally centered mask.
DQy represents earliest valid mask.
DQz represents latest valid mask.
2. *Skew = tDQS2DQ + 0.5 × TdiVW
DRAMa represents a DRAM without any DQS/DQ skews.
DRAMb represents a DRAM with the earliest skews (negative tDQS2DQ, tDQSy > *Skew).
DRAMc represents a DRAM with the latest skews (positive tDQS2DQ, tDQHz > *Skew).
t
3. DS/tDH are traditional data-eye setup/hold edges at DC levels.
tDS and tDH are not specified; tDH and tDS may be any value provided the pulse width
and Rx mask limits are not violated.
tDH (MIN) > TdiVW + tDS (MIN) + tDQ2DQ.
The DDR4 SDRAM's input receivers are expected to capture the input data with an Rx
mask of TdiVW provided the minimum pulse width is satisfied. The DRAM controller
will have to train the data input buffer to utilize the Rx mask specifications to this maxi-
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
mum benefit. If the DRAM controller does not train the data input buffers, then the
worst case limits have to be used for the Rx mask (TdiVW + 2 × tDQS2DQ), which will
generally be the classical minimum ( tDS and tDH) and is required as well.
Figure 171: Example of Data Input Requirements Without Training
TdiVW + 2 × tDQS2DQ
VdiVW
VIH(DC)
0.5 × VdiVW
Rx Mask
VCENTDQ,midpoint
0.5 × VdiVW
VIL(DC)
tDS
tDH
0.5 × TdiVW + tDQS2DQ 0.5 × TdiVW + tDQS2DQ
DQS_c
DQS_t
WRITE Burst Operation
The following write timing diagrams are intended to help understand each write parameter's meaning and are only examples. Each parameter will be defined in detail separately. In these write timing diagrams, CK and DQS are shown aligned, and DQS and
DQ are shown center-aligned for the purpose of illustration.
DDR4 WRITE command supports bursts of BL8 (fixed), BC4 (fixed), and BL8/BC4 onthe-fly (OTF); OTF uses address A12 to control OTF when OTF is enabled:
• A12 = 0, BC4 (BC4 = burst chop)
• A12 = 1, BL8
WRITE commands can issue precharge automatically with a WRITE with auto precharge (WRA) command, which is enabled by A10 HIGH.
• WRITE command with A10 = 0 (WR) performs standard write, bank remains active after WRITE burst
• WRITE command with A10 = 1 (WRA) performs write with auto precharge, bank goes
into precharge after WRITE burst
The DATA MASK (DM) function is supported for the x8 and x16 configurations only (the
DM function is not supported on x4 devices). The DM function shares a common pin
with the DBI_n and TDQS functions. The DM function only applies to WRITE operations and cannot be enabled at the same time the DBI function is enabled.
• If DM_n is sampled LOW on a given byte lane, the DRAM masks the write data received on the DQ inputs.
CCMTD-1406124318-10419
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
• If DM_n is sampled HIGH on a given byte lane, the DRAM does not mask the data and
writes this data into the DRAM core.
• If CRC write is enabled, then DM enabled (via MRS) will be selected between write
CRC nonpersistent mode (DM disabled) and write CRC persistent mode (DM enabled).
Figure 172: WRITE Burst Operation, WL = 9 (AL = 0, CWL = 9, BL8)
T0
T1
T2
T7
T8
T9
WRITE
DES
DES
DES
DES
DES
T10
T11
T12
T13
T14
T15
T16
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
Bank Group
Address
BGa
Address
Bank
Col n
DES
tWPST
tWPRE
DQS_t,
DQS_c
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
WL = AL + CWL = 9
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL8, WL = 0, AL = 0, CWL = 9, Preamble = 1tCK.
2. DI n = Data-in from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE command at T0.
5. CA parity = Disable, CS to CA Latency = Disable, Read DBI = Disable.
231
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 173: WRITE Burst Operation, WL = 19 (AL = 10, CWL = 9, BL8)
T0
T1
T2
T9
T10
T11
T17
T18
T19
T20
T21
T22
T23
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
Bank Group
Address
BGa
Bank
Col n
Address
tWPST
tWPRE
DQS_t,
DQS_c
DI
n
DQ
AL = 10
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
CWL = 9
WL = AL + CWL = 19
Time Break
Notes:
Don’t Care
Transitioning Data
1. BL8, WL = 19, AL = 10 (CL - 1), CWL = 9, Preamble = 1tCK.
2. DI n = data-in from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE command at T0.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable.
WRITE Operation Followed by Another WRITE Operation
Figure 174: Consecutive WRITE (BL8) with 1tCK Preamble in Different Bank Group
T0
T1
T2
T3
T4
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
WRITE
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
tWR
tCCD_S
Bank Group
Address
Address
4 Clocks
=4
BGa
BGb
Bank
Col n
Bank
Col b
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
WL = AL + CWL = 9
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL8, AL = 0, CWL = 9, Preamble = 1tCK.
2. DI n (or b) = data-in from column n (or column b).
232
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE commands at T0 and T4.
5. CA parity = Disable, CS to CA latency = Disable, Write DBI = Disable, Write CRC = Disable.
6. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T17.
Figure 175: Consecutive WRITE (BL8) with 2tCK Preamble in Different Bank Group
T0
T1
T2
T3
T4
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
WRITE
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
tWR
tCCD_S
Bank Group
Address
Address
4 Clocks
=4
BGa
BGb
Bank
Col n
Bank
Col b
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 10
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
WL = AL + CWL = 10
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL8, AL = 0, CWL = 9 + 1 = 10 (see Note 7), Preamble = 2tCK.
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE commands at T0 and T4.
5. CA parity = Disable, CS to CA latency = Disable, Write DBI = Disable, Write CRC = Disable.
6. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T17.
7. When operating in 2tCK WRITE preamble mode, CWL may need to be programmed to a
value at least 1 clock greater than the lowest CWL setting supported in the applicable
tCK range, which means CWL = 9 is not allowed when operating in 2tCK WRITE preamble mode.
233
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WRITE Operation
Figure 176: Nonconsecutive WRITE (BL8) with 1tCK Preamble in Same or Different Bank Group
T0
T1
T2
T3
T4
T5
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
WRITE
DES
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
tWR
tCCD_S/L
Bank Group
Address
Address
4 Clocks
=5
BGa
BGa
or BGb
Bank
Col n
Bank
Col b
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
WL = AL + CWL = 9
Time Break
Notes:
Don’t Care
Transitioning Data
1. BL8, AL = 0, CWL = 9, Preamble = 1tCK, tCCD_S/L = 5tCK.
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE commands at T0 and T5.
5. CA parity = Disable, CS to CA latency = Disable, Write DBI = Disable, Write CRC = Disable.
6. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T18.
Figure 177: Nonconsecutive WRITE (BL8) with 2tCK Preamble in Same or Different Bank Group
T0
T1
T2
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
WRITE
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
tWR
tCCD_S/L
Bank Group
Address
Address
4 Clocks
=6
BGa
BGa
or BGb
Bank
Col n
Bank
Col b
tWPRE
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 10
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
WL = AL + CWL = 10
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL8, AL = 0, CWL = 9 + 1 = 10 (see Note 8), Preamble = 2tCK, tCCD_S/L = 6tCK.
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE commands at T0 and T6.
234
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
5. CA parity = Disable, CS to CA latency = Disable, Write DBI = Disable, Write CRC = Disable.
6. tCCD_S/L = 5 isn’t allowed in 2tCK preamble mode.
7. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T20.
8. When operating in 2tCK WRITE preamble mode, CWL may need to be programmed to a
value at least 1 clock greater than the lowest CWL setting supported in the applicable
tCK range, which means CWL = 9 is not allowed when operating in 2tCK WRITE preamble mode.
Figure 178: WRITE (BC4) OTF to WRITE (BC4) OTF with 1tCK Preamble in Different Bank Group
T0
T1
T2
T3
T4
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
WRITE
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
tWR
tCCD_S
Bank Group
Address
Address
4 Clocks
=4
BGa
BGb
Bank
Col n
Bank
Col b
tWPST
tWPRE
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
WL = AL + CWL = 9
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BC4, AL = 0, CWL = 9, Preamble = 1tCK.
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE commands at T0 and
T4.
5. CA parity = Disable, CS to CA latency = Disable, Write DBI = Disable, Write CRC = Disable.
6. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T17.
235
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 179: WRITE (BC4) OTF to WRITE (BC4) OTF with 2tCK Preamble in Different Bank Group
T0
T1
T2
T3
T4
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
WRITE
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T19
CK_c
CK_t
Command
DES
tWR
tCCD_S
Bank Group
Address
Address
4 Clocks
=4
BGa
BGb
Bank
Col n
Bank
Col b
tWPRE
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 10
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
WL = AL + CWL = 10
Time Break
Notes:
Transitioning Data
Don’t Care
1. BC4, AL = 0, CWL = 9 + 1 = 10 (see Note 7), Preamble = 2tCK.
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 1 during WRITE commands at T0 and
T4.
5. CA parity = Disable, CS to CA latency = Disable, Write DBI = Disable, Write CRC = Disable.
6. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T18.
7. When operating in 2tCK WRITE preamble mode, CWL may need to be programmed to a
value at least 1 clock greater than the lowest CWL setting supported in the applicable
tCK range, which means CWL = 9 is not allowed when operating in 2tCK WRITE preamble mode.
Figure 180: WRITE (BC4) Fixed to WRITE (BC4) Fixed with 1tCK Preamble in Different Bank Group
T0
T1
T2
T3
T4
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
WRITE
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
tWR
tCCD_S
Bank Group
Address
Address
2 Clocks
=4
BGa
BGb
Bank
Col n
Bank
Col b
tWPST
tWPRE
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
WL = AL + CWL = 9
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BC4, AL = 0, CWL = 9, Preamble = 1tCK.
2. DI n (or b) = data-in from column n (or column b).
236
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WRITE Operation
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 (fixed) setting activated by MR0[1:0] = 10.
5. CA parity = Disable, CS to CA latency = Disable, Write DBI = Disable, Write CRC = Disable.
6. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T15.
Figure 181: WRITE (BL8) to WRITE (BC4) OTF with 1tCK Preamble in Different Bank Group
T0
T1
T2
T3
T4
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
WRITE
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T19
CK_c
CK_t
Command
DES
t
4 Clocks
t
CCD_S = 4
Bank Group
Address
Address
BGa
BGb
Bank
Col n
Bank
Col b
t
t
WPRE
WR
t
WTR
WPST
DQS_t,
DQS_c
WL = AL + CWL = 9
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
WL = AL + CWL = 9
Time Break
Notes:
Transitioning Data
Don’t Care
1. BL = 8/BC = 4, AL = 0, CL = 9, Preamble = 1tCK.
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by MR0[1:0] = 01 and A12 = 1 during WRITE command at T0.
BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE command at T4.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write CRC = Disable.
6. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T17.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 182: WRITE (BC4) OTF to WRITE (BL8) with 1tCK Preamble in Different Bank Group
T0
T1
T2
T3
T4
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
WRITE
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T19
CK_c
CK_t
Command
DES
tWR
tCCD_S
Bank Group
Address
Address
4 Clocks
=4
BGa
BGb
Bank
Col n
Bank
Col b
tWPST
tWPRE
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
WL = AL + CWL = 9
Time Break
Don’t Care
Transitioning Data
1. BL = 8/BC = 4, AL = 0, CL = 9, Preamble = 1tCK.
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE command at T0.
Notes:
BL8 setting activated by MR0[1:0] = 01 and A12 = 1 during WRITE command at T4.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write CRC = Disable.
6. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T17.
WRITE Operation Followed by READ Operation
Figure 183: WRITE (BL8) to READ (BL8) with 1tCK Preamble in Different Bank Group
T0
T1
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T24
T25
T26
T27
T28
T29
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
READ
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
4 Clocks
Bank Group
Address
Address
tWTR_S
BGa
=2
BGb
Bank
Col n
Bank
Col b
tWPST
tWPRE
tRPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
RL = AL + CL = 11
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
DI
b
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
DI
b+1
DI
b+2
DI
b+3
Transitioning Data
DI
b+4
DI
b+5
DI
b+6
Don’t Care
1. BL = 8, WL = 9 (CWL = 9, AL = 0), CL = 11, READ preamble = 1tCK, WRITE preamble =
1tCK.
2. DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE command at T0 and READ command at T15.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
6. The write timing parameter (tWTR_S) is referenced from the first rising clock edge after
the last write data shown at T13.
Figure 184: WRITE (BL8) to READ (BL8) with 1tCK Preamble in Same Bank Group
T0
T1
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T26
T27
T28
T29
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
READ
DES
DES
DES
DES
DES
CK_c
CK_t
Command
4 Clocks
Bank Group
Address
Address
tWTR_L
BGa
=4
BGa
Bank
Col n
Bank
Col b
tWPST
tWPRE
tRPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
RL = AL + CL = 11
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
DI
b
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
DI
b+1
DI
b+2
Don’t Care
1. BL = 8, WL = 9 (CWL = 9, AL = 0), CL = 11, READ preamble = 1tCK, WRITE preamble =
1tCK.
2. DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE command at T0 and READ command at T17.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
6. The write timing parameter (tWTR_L) is referenced from the first rising clock edge after
the last write data shown at T13.
239
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 185: WRITE (BC4) OTF to READ (BC4) OTF with 1tCK Preamble in Different Bank Group
T0
T1
T7
T8
T9
T10
WRITE
DES
DES
DES
DES
DES
T11
T12
T13
DES
DES
DES
T14
T15
T16
T24
T25
T26
T27
T28
T29
DES
READ
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
4 Clocks
Bank Group
Address
Address
tWTR_S
=2
BGa
BGb
Bank
Col n
Bank
Col b
tWPST
tWPRE
tRPST
tRPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
RL = AL + CL = 11
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
b
Time Break
DI
b+1
DI
b+2
DI
b+3
Transitioning Data
Don’t Care
1. BC = 4, WL = 9 (CWL = 9, AL = 0), CL = 11, READ preamble = 1tCK, WRITE preamble =
1tCK.
2. DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE command at T0 and
READ command at T15.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
6. The write timing parameter (tWTR_S) is referenced from the first rising clock edge after
the last write data shown at T13.
Notes:
Figure 186: WRITE (BC4) OTF to READ (BC4) OTF with 1tCK Preamble in Same Bank Group
T0
T1
T7
T8
T9
T10
WRITE
DES
DES
DES
DES
DES
T11
T12
T13
T14
DES
DES
DES
DES
T15
T16
T17
T18
T26
T27
T28
T29
DES
DES
READ
DES
DES
DES
DES
DES
CK_c
CK_t
Command
4 Clocks
Bank Group
Address
Address
tWTR_L
BGa
=4
BGa
Bank
Col n
Bank
Col b
tWPST
tWPRE
tRPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
RL = AL + CL = 11
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
b
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
DI
b+1
DI
b+2
Don’t Care
1. BC = 4, WL = 9 (CWL = 9, AL = 0), CL = 11, READ preamble = 1tCK, WRITE preamble =
1tCK.
2. DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE command at T0 and
READ command at T17.
240
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
6. The write timing parameter (tWTR_L) is referenced from the first rising clock edge after
the last write data shown at T13.
Figure 187: WRITE (BC4) Fixed to READ (BC4) Fixed with 1 tCK Preamble in Different Bank Group
T0
T1
T7
T8
T9
WRITE
DES
DES
DES
DES
T10
T11
DES
DES
T12
T13
T14
T22
T23
T24
T25
T26
T27
T28
T29
DES
DES
DES
DES
DES
READ
DES
DES
DES
DES
DES
CK_c
CK_t
Command
2 Clocks
Bank Group
Address
Address
tWTR_S
=2
BGa
BGb
Bank
Col n
Bank
Col b
tWPST
tWPRE
tRPST
tRPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
RL = AL + CL = 11
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
b
DI
b+1
DI
b+2
DI
b+3
Time Break
Transitioning Data
Don’t Care
1. BC = 4, WL = 9 (CWL = 9, AL = 0), CL = 11, READ preamble = 1 tCK, WRITE preamble =
1tCK.
2. DI b = data-in from column b.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 10.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
6. The write timing parameter (tWTR_S) is referenced from the first rising clock edge after
the last write data shown at T11.
Notes:
Figure 188: WRITE (BC4) Fixed to READ (BC4) Fixed with 1tCK Preamble in Same Bank Group
T0
T1
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T24
T25
T26
T27
T28
T29
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
READ
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
2 Clocks
Bank Group
Address
Address
tWTR_L
=4
BGa
BGa
Bank
Col n
Bank
Col b
tWPST
tWPRE
tRPST
tRPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
RL = AL + CL = 11
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
b
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
DI
b+1
DI
b+2
DI
b+3
Transitioning Data
Don’t Care
1. BC = 4, WL = 9 (CWL = 9, AL = 0), C L = 11, READ preamble = 1tCK, WRITE preamble =
1tCK.
2. DI b = data-in from column b.
241
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 10.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write DBI = Disable,
Write CRC = Disable.
6. The write timing parameter (tWTR_L) is referenced from the first rising clock edge after
the last write data shown at T11.
WRITE Operation Followed by PRECHARGE Operation
The minimum external WRITE command to PRECHARGE command spacing is equal to
WL (AL + CWL) plus either 4tCK (BL8/BC4-OTF) or 2tCK (BC4-fixed) plus tWR. The minimum ACT to PRE timing, tRAS, must be satisfied as well.
Figure 189: WRITE (BL8/BC4-OTF) to PRECHARGE with 1tCK Preamble
T0
T1
T2
WRITE
DES
DES
T3
T4
T7
T8
T9
T10
DES
DES
DES
DES
DES
DES
T11
T12
T13
T14
T22
DES
DES
DES
DES
DES
T23
T24
T25
DES
DES
PRE
T26
CK_c
CK_t
Command
WL = AL + CWL = 9
tWR
4 Clocks
BGa, Bank b
Col n
DES
tRP
= 12
BGa, Bank b
(or all)
Address
BC4 (OTF) Opertaion
DQS_t,
DQS_c
DQ
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
n
DI
n+1
DI
n+2
DI
n+3
BL8 Opertaion
DQS_t,
DQS_c
DQ
DI
n+4
DI
n+5
DI
n+6
DI
n+7
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8 with BC4-OTF, WL = 9 (CWL = 9, AL = 0 ), Preamble = 1tCK, tWR = 12.
2. DI n = data-in from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE command at T0. BL8
setting activated by MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during WRITE command
at T0.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, CRC = Disable.
6. The write recovery time (tWR) is referenced from the first rising clock edge after the last
write data shown at T13. tWR specifies the last burst WRITE cycle until the PRECHARGE
command can be issued to the same bank.
242
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8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 190: WRITE (BC4-Fixed) to PRECHARGE with 1tCK Preamble
T0
T1
T2
WRITE
DES
DES
T3
T4
T7
T8
T9
DES
DES
DES
DES
DES
T10
T11
T12
T13
DES
DES
DES
DES
T14
T22
T23
DES
DES
PRE
T24
T25
T26
DES
DES
DES
CK_c
CK_t
Command
WL = AL + CWL = 9
tWR
2 Clocks
tRP
= 12
BGa, Bank b
Col n
BGa, Bank b
(or all)
Address
BC4 (Fixed) Opertaion
DQS_t,
DQS_c
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
Time Break
Notes:
Transitioning Data
Don’t Care
1. BC4 = fixed, WL = 9 (CWL = 9, AL = 0 ), Preamble = 1tCK, tWR = 12.
2. DI n = data-in from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 10.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, CRC = Disable.
6. The write recovery time (tWR) is referenced from the first rising clock edge after the last
write data shown at T11. tWR specifies the last burst WRITE cycle until the PRECHARGE
command can be issued to the same bank.
Figure 191: WRITE (BL8/BC4-OTF) to Auto PRECHARGE with 1tCK Preamble
T0
T1
T2
WRITE
DES
DES
T3
T4
T7
T8
T9
T10
DES
DES
DES
DES
DES
DES
T11
T12
T13
T14
T22
DES
DES
DES
DES
DES
T23
T24
T25
DES
DES
DES
T26
CK_c
CK_t
Command
WL = AL + CWL = 9
tWR
4 Clocks
DES
tRP
= 12
BGa, Bank b
Col n
Address
BC4 (OTF) Opertaion
DQS_t,
DQS_c
DQ
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
n
DI
n+1
DI
n+2
DI
n+3
BL8 Opertaion
DQS_t,
DQS_c
DQ
DI
n+4
DI
n+5
DI
n+6
DI
n+7
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8 with BC4-OTF, WL = 9 (CWL = 9, AL = 0 ), Preamble = 1tCK, tWR = 12.
2. DI n = data-in from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE command at T0.
BL8 setting activated by MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during WRITE command at T0.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, CRC = Disable.
243
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
6. The write recovery time (tWR) is referenced from the first rising clock edge after the last
write data shown at T13. tWR specifies the last burst WRITE cycle until the PRECHARGE
command can be issued to the same bank.
Figure 192: WRITE (BC4-Fixed) to Auto PRECHARGE with 1tCK Preamble
T0
T1
T2
WRITE
DES
DES
T3
T4
T7
T8
T9
DES
DES
DES
DES
DES
T10
T11
T12
T13
DES
DES
DES
DES
T14
T22
T23
T24
DES
DES
DES
DES
T25
T26
DES
DES
CK_c
CK_t
Command
WL = AL + CWL = 9
tWR
2 Clocks
tRP
= 12
BGa, Bank b
Col n
Address
BC4 (Fixed) Opertaion
DQS_t,
DQS_c
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BC4 = fixed, WL = 9 (CWL = 9, AL = 0 ), Preamble = 1tCK, tWR = 12.
2. DI n = data-in from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 10.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, CRC = Disable.
6. The write recovery time (tWR) is referenced from the first rising clock edge after the last
write data shown at T11. tWR specifies the last burst WRITE cycle until the PRECHARGE
command can be issued to the same bank.
244
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
WRITE Operation with WRITE DBI Enabled
Figure 193: WRITE (BL8/BC4-OTF) with 1tCK Preamble and DBI
T0
T1
T2
WRITE
DES
DES
T3
T4
T5
T6
T7
T8
T9
T10
DES
DES
DES
DES
DES
DES
DES
DES
T11
T12
T13
T14
DES
DES
DES
DES
T15
T16
T17
DES
DES
DES
CK_c
CK_t
Command
WL = AL + CWL = 9
tWR
4 Clocks
tWTR
Address
BGa
Address
Bank,
Col n
BC4 (OTF) Opertaion
DQS_t,
DQS_c
DQ
DI
n
DI
n+1
DI
n+2
DI
n+3
DBI_n
DI
n
DI
n+1
DI
n+2
DI
n+3
DQ
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
DBI_n
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
BL8 Opertaion
DQS_t,
DQS_c
Transitioning Data
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Don’t Care
1. BL = 8 with BC4-OTF, WL = 9 (CWL = 9, AL = 0 ), Preamble = 1tCK.
2. DI n = data-in from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE command at T0.
BL8 setting activated by MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during WRITE command at T0.
5. CA parity = Disable, CS to CA latency = Disable, Write DBI = Enabled, Write CRC = Disabled.
6. The write recovery time (tWR_DBI) is referenced from the first rising clock edge after the
last write data shown at T13.
245
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 194: WRITE (BC4-Fixed) with 1tCK Preamble and DBI
T0
T1
T2
WRITE
DES
DES
T3
T4
T5
T6
T7
T8
T9
DES
DES
DES
DES
DES
DES
DES
T10
T11
T12
T13
T14
DES
DES
DES
DES
DES
T15
T16
T17
DES
DES
DES
CK_c
CK_t
Command
WL = AL + CWL = 9
tWR
2 Clocks
tWTR
Address
BGa
Address
Bank,
Col n
BC4 (Fixed) Opertaion
DQS_t,
DQS_c
DQ
DI
n
DI
n+1
DI
n+2
DI
n+3
DBI_n
DI
n
DI
n+1
DI
n+2
DI
n+3
Transitioning Data
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Don’t Care
1. BC4 = fixed, WL = 9 (CWL = 9, AL = 0 ), Preamble = 1tCK.
2. DI n = data-in from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 10.
5. CA parity = Disable, CS to CA latency = Disable, Write DBI = Enabled, Write CRC = Disabled.
246
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
WRITE Operation with CA Parity Enabled
Figure 195: Consecutive Write (BL8) with 1tCK Preamble and CA Parity in Different Bank Group
T0
T1
T2
T3
T4
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
T22
T23
WRITE
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
tWR
tCCD_S
Bank Group
Address
4 Clocks
=4
BGa
BGb
Address
Bank
Col n
Bank
Col b
Parity
Valid
Valid
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = PL + AL + CWL = 13
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
WL = PL + AL + CWL = 13
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL = 8, WL = 9 (CWL = 13, AL = 0 ), Preamble = 1tCK.
2. DI n = data-in from column n.
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during WRITE commands at T0 and T4.
5. CA parity = Enable, CS to CA latency = Disable, Write DBI = Enabled, Write CRC = Disable.
6. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T21.
247
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
WRITE Operation with Write CRC Enabled
Figure 196: Consecutive WRITE (BL8/BC4-OTF) with 1tCK Preamble and Write CRC in Same or Different Bank Group
T0
T1
T2
T3
T4
T5
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
WRITE
DES
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T19
CK_c
CK_t
Command
DES
tWR
tCCD_S/L
Bank Group
Address
Address
4 Clocks
=5
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
CRC
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
CRC
DQ x4,
BC = 4 (OTF)
DI
n
DI
n+1
DI
n+2
DI
n+3
CRC
DQ x8/X16,
BC = 4 (OTF)
DI
n
DI
n+1
DI
n+2
DI
n+3
CRC
DQ x4,
BL = 8
CRC
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
CRC
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
CRC
DI
b
DI
b+1
DI
b+2
DI
b+3
CRC
DI
b
DI
b+1
DI
b+2
DI
b+3
CRC
CRC
WL = AL + CWL = 9
DQ x8/X16,
BL = 8
CRC
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
CRC
Don’t Care
1. BL8/BC4-OTF, AL = 0, CWL = 9, Preamble = 1tCK, tCCD_S/L = 5tCK.
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE commands at T0 and T5.
5. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE commands at T0 and
T5.
6. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write CRC = Enable.
7. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T18.
248
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 197: Consecutive WRITE (BC4-Fixed) with 1tCK Preamble and Write CRC in Same or Different
Bank Group
T0
T1
T2
T3
T4
T5
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
WRITE
DES
DES
DES
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T18
T19
DES
DES
CK_c
CK_t
Command
tWR
tCCD_S/L
Bank Group
Address
Address
2 Clocks
=5
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
DQ x4,
BC = 4 (Fixed)
DI
n
DI
n+1
DI
n+2
DI
n+3
CRC
DI
n
DI
n+1
DI
n+2
DI
n+3
CRC
CRC
DI
b
DI
b+1
DI
b+2
DI
b+3
CRC
DI
b
DI
b+1
DI
b+2
DI
b+3
CRC
CRC
WL = AL + CWL = 9
DQ x8/X16,
BC = 4 (Fixed)
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BC4-fixed, AL = 0, CWL = 9, Preamble = 1tCK, tCCD_S/L = 5tCK.
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BC4 setting activated by MR0[1:0] = 10 during WRITE commands at T0 and T5.
5. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write CRC = Enable,
DM = Disable.
6. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T16.
249
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 198: Nonconsecutive WRITE (BL8/BC4-OTF) with 1tCK Preamble and Write CRC in Same or Different Bank Group
7
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7
7
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7
7
7
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7
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Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
7UDQVLWLRQLQJ'DWD
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1. BL8/BC4-OTF, AL = 0, CWL = 9, Preamble = 1tCK, tCCD_S/L = 6tCK.
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE commands at T0 and T6.
5. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE commands at T0 and
T6.
6. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write CRC = Enable,
DM = Disable.
7. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T19.
250
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 199: Nonconsecutive WRITE (BL8/BC4-OTF) with 2tCK Preamble and Write CRC in Same or Different Bank Group
T0
T1
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
WRITE
DES
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T22
CK_c
CK_t
Command
DES
tWR
tCCD_S/L
Bank Group
Address
Address
4 Clocks
=7
BGa
BGa or
BGb
Bank
Col n
Bank
Col b
tWPRE
tWTR
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 10
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
CRC
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
CRC
DQ x4,
BC = 4 (OTF)
DI
n
DI
n+1
DI
n+2
DI
n+3
CRC
DQ x8/X16,
BC = 4 (OTF)
DI
n
DI
n+1
DI
n+2
DI
n+3
CRC
DQ x4,
BL = 8
CRC
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
CRC
DI
b
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
CRC
DI
b
DI
b+1
DI
b+2
DI
b+3
CRC
DI
b
DI
b+1
DI
b+2
DI
b+3
CRC
CRC
WL = AL + CWL = 10
DQ x8/X16,
BL = 8
CRC
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
CRC
Don’t Care
1. BL8/BC4-OTF, AL = 0, CWL = 9 + 1 = 10 (see Note 9), Preamble = 2tCK, tCCD_S/L = 7tCK
(see Note 7).
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE commands at T0 and T7.
5. BC4 setting activated by MR0[1:0] = 01 and A12 = 0 during WRITE commands at T0 and
T7.
6. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write CRC = Enable,
DM = Disable.
7. tCCD_S/L = 6tCK is not allowed in 2tCK preamble mode if minimum tCCD_S/L allowed in
1tCK preamble mode would have been 6 clocks.
8. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from
the first rising clock edge after the last write data shown at T21.
9. When operating in 2tCK WRITE preamble mode, CWL may need to be programmed to a
value at least 1 clock greater than the lowest CWL setting supported in the applicable
tCK range. That means CWL = 9 is not allowed when operating in 2tCK WRITE preamble
mode.
251
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
WRITE Operation
Figure 200: WRITE (BL8/BC4-OTF/Fixed) with 1tCK Preamble and Write CRC in Same or Different Bank
Group
T0
T1
T2
T6
T7
T8
T9
T10
T11
T12
T13
T14
WRITE
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
DES
T15
T16
T17
T18
T19
T20
DES
DES
DES
DES
DES
DES
CK_c
CK_t
Command
tWR_CRC_DM
4 Clocks
Bank Group
Address
Address
tWTR_S_CRC_DM/tWTR_L_CRC_DM
BGa
Bank
Col n
tWPST
tWPRE
DQS_t,
DQS_c
WL = AL + CWL = 9
DQ x4,
BL = 8
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
CRC
DQ x8/X16,
BL = 8
DI
n
DI
n+1
DI
n+2
DI
n+3
DI
n+4
DI
n+5
DI
n+6
DI
n+7
CRC
DM
n
DM
n+1
DM
n+2
DM
n+3
DM
n+4
DM
n+5
DM
n+6
DM
n+7
DQ x4,
BC = 4 (OTF/Fixed)
DI
n
DI
n+1
DI
n+2
DI
n+3
CRC
DQ x8/X16,
BC = 4 (OTF/Fixed)
DI
n
DI
n+1
DI
n+2
DI
n+3
CRC
DM
n
DM
n+1
DM
n+2
DM
n+3
DMx4/x8/x16
BL = 8
DM x4/x8/x16
BC = 4 (OTF / Fixed)
CRC
CRC
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Transitioning Data
Don’t Care
1. BL8/BC4, AL = 0, CWL = 9, Preamble = 1tCK.
2. DI n (or b) = data-in from column n (or column b).
3. DES commands are shown for ease of illustration; other commands may be valid at
these times.
4. BL8 setting activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
WRITE command at T0.
5. BC4 setting activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during
WRITE command at T0.
6. CA parity = Disable, CS to CA latency = Disable, Read DBI = Disable, Write CRC = Enable,
DM = Enable.
7. The write recovery time (tWR_CRC_DM) and write timing parameter (tWTR_S_CRC_DM/
tWTR_L_CRC_DM) are referenced from the first rising clock edge after the last write data shown at T13.
252
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8Gb: x8, x16 Automotive DDR4 SDRAM
Write Timing Violations
Write Timing Violations
Motivation
Generally, if timing parameters are violated, a complete reset/initialization procedure
has to be initiated to make sure that the device works properly. However, for certain minor violations, it is desirable that the device is guaranteed not to "hang up" and that errors are limited to that specific operation. A minor violation does not include a major
timing violation (for example, when a DQS strobe misses in the tDQSCK window).
For the following, it will be assumed that there are no timing violations with regard to
the WRITE command itself (including ODT, and so on) and that it does satisfy all timing
requirements not mentioned below.
Data Setup and Hold Violations
If the data-to-strobe timing requirements (tDS, tDH) are violated, for any of the strobe
edges associated with a WRITE burst, then wrong data might be written to the memory
location addressed with this WRITE command.
In the example, the relevant strobe edges for WRITE Burst A are associated with the
clock edges: T5, T5.5, T6, T6.5, T7, T7.5, T8, and T8.5.
Subsequent reads from that location might result in unpredictable read data; however,
the device will work properly otherwise.
Strobe-to-Strobe and Strobe-to-Clock Violations
If the strobe timing requirements (tDQSH, tDQSL, tWPRE, tWPST) or the strobe to clock
timing requirements (tDSS, tDSH, tDQSS) are violated, for any of the strobe edges associated with a WRITE burst, then wrong data might be written to the memory location
addressed with the offending WRITE command. Subsequent reads from that location
might result in unpredictable read data; however, the device will work properly otherwise with the following constraints:
• Both write CRC and data burst OTF are disabled; timing specifications other than
tDQSH, tDQSL, tWPRE, tWPST, tDSS, tDSH, tDQSS are not violated.
• The offending write strobe (and preamble) arrive no earlier or later than six DQS transition edges from the WRITE latency position.
• A READ command following an offending WRITE command from any open bank is
allowed.
• One or more subsequent WR or a subsequent WRA (to same bank as offending WR)
may be issued tCCD_L later, but incorrect data could be written. Subsequent WR and
WRA can be either offending or non-offending writes. Reads from these writes may
provide incorrect data.
• One or more subsequent WR or a subsequent WRA (to a different bank group) may be
issued tCCD_S later, but incorrect data could be written. Subsequent WR and WRA
can be either offending or non-offending writes. Reads from these writes may provide
incorrect data.
• After one or more precharge commands (PRE or PREA) are issued to the device after
an offending WRITE command and all banks are in precharged state (idle state), a
subsequent, non-offending WR or WRA to any open bank will be able to write correct
data.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
253
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
ZQ CALIBRATION Commands
ZQ CALIBRATION Commands
A ZQ CALIBRATION command is used to calibrate DRAM RON and ODT values. The device needs a longer time to calibrate the output driver and on-die termination circuits
at initialization and a relatively smaller time to perform periodic calibrations.
The ZQCL command is used to perform the initial calibration during the power-up initialization sequence. This command may be issued at any time by the controller depending on the system environment. The ZQCL command triggers the calibration engine inside the DRAM and, after calibration is achieved, the calibrated values are transferred from the calibration engine to DRAM I/O, which is reflected as an updated output driver and ODT values.
The first ZQCL command issued after reset is allowed a timing period of tZQinit to perform the full calibration and the transfer of values. All other ZQCL commands except
the first ZQCL command issued after reset are allowed a timing period of tZQoper.
The ZQCS command is used to perform periodic calibrations to account for voltage and
temperature variations. A shorter timing window is provided to perform the calibration
and transfer of values as defined by timing parameter tZQCS. One ZQCS command can
effectively correct a minimum of 0.5% (ZQ correction) of RON and RTT impedance error
within 64 nCK for all speed bins assuming the maximum sensitivities specified in the
Output Driver and ODT Voltage and Temperature Sensitivity tables. The appropriate interval between ZQCS commands can be determined from these tables and other application-specific parameters. One method for calculating the interval between ZQCS
commands, given the temperature (Tdrift_rate) and voltage (Vdrift_rate) drift rates that the
device is subjected to in the application, is illustrated. The interval could be defined by
the following formula:
ZQcorrection
(Tsense x Tdrift_rate) + (Vsense x Tdrift_rate)
Where T sense = MAX(dRTTdT, dRONdTM) and V sense = MAX(dRTTdV, dRONdVM) define
the temperature and voltage sensitivities.
For example, if T sens = 1.5%/°C, V sens = 0.15%/mV, T driftrate = 1 °C/sec and V driftrate = 15
mV/sec, then the interval between ZQCS commands is calculated as:
0.5
= 0.133 §128ms
(1.5 × 1) + (0.15 × 15)
No other activities should be performed on the DRAM channel by the controller for the
duration of tZQinit, tZQoper, or tZQCS. The quiet time on the DRAM channel allows accurate calibration of output driver and on-die termination values. After DRAM calibration is achieved, the device should disable the ZQ current consumption path to reduce
power.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued
by the controller.
ZQ CALIBRATION commands can also be issued in parallel to DLL lock time when
coming out of self refresh. Upon self refresh exit, the device will not perform an I/O caliCCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
254
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
ZQ CALIBRATION Commands
bration without an explicit ZQ CALIBRATION command. The earliest possible time for a
ZQ CALIBRATION command (short or long) after self refresh exit is tXS, tXS_Abort, or
tXS_FAST depending on operation mode.
In systems that share the ZQ resistor between devices, the controller must not allow any
overlap of tZQoper, tZQinit, or tZQCS between the devices.
Figure 201: ZQ Calibration Timing
T0
T1
Ta0
Ta1
Ta2
Ta3
Tb0
Tb1
Tc0
Tc1
Tc2
ZQCL
DES
DES
DES
Valid
Valid
ZQCS
DES
DES
DES
Valid
Address
Valid
Valid
Valid
A10
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
CK_c
CK_t
Command
CKE
Note 1
Note 2
ODT
DQ Bus
High-Z or RTT(Park)
Activities
High-Z or RTT(Park)
Activities
Note 3
tZQinit_tZQoper
tZQCS
Time Break
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Don’t Care
1. CKE must be continuously registered HIGH during the calibration procedure.
2. During ZQ calibration, the ODT signal must be held LOW and DRAM continues to provide RTT_PARK.
3. All devices connected to the DQ bus should be High-Z during the calibration procedure.
255
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
On-Die Termination
On-Die Termination
The on-die termination (ODT) feature enables the device to change termination resistance for each DQ, DQS, and DM_n/DBI_n signal for x4 and x8 configurations (and
TDQS for the x8 configuration when enabled via A11 = 1 in MR1) via the ODT control
pin, WRITE command, or default parking value with MR setting. For the x16 configuration, ODT is applied to each UDQ, LDQ, UDQS, LDQS, UDM_n/UDBI_n, and LDM_n/
LDBI_n signal. The ODT feature is designed to improve the signal integrity of the memory channel by allowing the DRAM controller to independently change termination resistance for any or all DRAM devices. If DBI read mode is enabled while the DRAM is in
standby, either DM mode or DBI write mode must also be enabled if RTT(NOM) or
RTT(Park) is desired. More details about ODT control modes and ODT timing modes can
be found further along in this document.
The ODT feature is turned off and not supported in self refresh mode.
Figure 202: Functional Representation of ODT
ODT
To other
circuitry
such as
RCV,
...
VDDQ
RTT
Switch
DQ, DQS, DM, TDQS
The switch is enabled by the internal ODT control logic, which uses the external ODT
pin and other control information. The value of R TT is determined by the settings of
mode register bits (see Mode Register). The ODT pin will be ignored if the mode register
MR1 is programmed to disable RTT(NOM) [MR1[10,9,8] = 0,0,0] and in self refresh mode.
ODT Mode Register and ODT State Table
The ODT mode of the DDR4 device has four states: data termination disable, RTT(NOM),
RTT(WR), and RTT(Park). The ODT mode is enabled if any of MR1[10:8] (R TT(NOM)),
MR2[11:9] (RTT(WR)), or MR5[8:6] (RTT(Park)) are non-zero. When enabled, the value of
RTT is determined by the settings of these bits.
RTT control of each RTT condition is possible with a WR or RD command and ODT pin.
• RTT(WR): The DRAM (rank) that is being written to provide termination regardless of
ODT pin status (either HIGH or LOW).
• RTT(NOM): DRAM turns ON RTT(NOM) if it sees ODT asserted HIGH (except when ODT
is disabled by MR1).
• RTT(Park): Default parked value set via MR5 to be enabled and RTT(NOM) is not turned
on.
• The Termination State Table that follows shows various interactions.
The RTT values have the following priority:
•
•
•
•
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Data termination disable
RTT(WR)
RTT(NOM)
RTT(Park)
256
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
ODT Mode Register and ODT State Table
Table 72: Termination State Table
Case
RTT(Park)
RTT(NOM)1
RTT(WR)2
ODT Pin
ODT READS3
ODT Standby7
ODT WRITES
A4
Disabled
Disabled
Disabled
Don't Care
Off (High-Z)
Off (High-Z)
Off (High-Z)
Enabled
Don't Care
Off (High-Z)
Off (High-Z)
RTT(WR)
RTT(Park)
RTT(Park)
B5
Enabled
Disabled
Disabled
Don't Care
Off (High-Z)
Enabled
Don't Care
Off (High-Z)
RTT(Park)
RTT(WR)
C6
Disabled
Enabled
Disabled
Low
Off (High-Z)
Off (High-Z)
Off (High-Z)
High
Off (High-Z)
RTT(NOM)
RTT(NOM)
Low
Off (High-Z)
Off (High-Z)
RTT(WR)
High
Off (High-Z)
RTT(NOM)
RTT(WR)
Low
Off (High-Z)
RTT(Park)
RTT(Park)
High
Off (High-Z)
RTT(NOM)
RTT(NOM)
Low
Off (High-Z)
RTT(Park)
RTT(WR)
High
Off (High-Z)
RTT(NOM)
RTT(WR)
Enabled
D6
Enabled
Enabled
Disabled
Enabled
Notes:
1. If RTT(NOM) MR is disabled, power to the ODT receiver will be turned off to save power.
2. If RTT(WR) is enabled, RTT(WR) will be activated by a WRITE command for a defined period
time independent of the ODT pin and MR setting of RTT(Park)/RTT(NOM). This is described in
the Dynamic ODT section.
3. When a READ command is executed, the DRAM termination state will be High-Z for a
defined period independent of the ODT pin and MR setting of RTT(Park)/RTT(NOM). This is
described in the ODT During Read section.
4. Case A is generally best for single-rank memories.
5. Case B is generally best for dual-rank, single-slotted memories.
6. Case C and Case D are generally best for multi-slotted memories.
7. The ODT feature is turned off and not supported in self refresh mode.
ODT Read Disable State Table
Upon receiving a READ command, the DRAM driving data disables ODT after RL - (2 or
3) clock cycles, where 2 = 1tCK preamble mode and 3 = 2tCK preamble mode. ODT stays
off for a duration of BL/2 + (2 or 3) + (0 or 1) clock cycles, where 2 = 1tCK preamble
mode, 3 = 2tCK preamble mode, 0 = CRC disabled, and 1 = CRC enabled.
Table 73: Read Termination Disable Window
Preamble
CRC
Start ODT Disable After
Read
Duration of ODT Disable
1tCK
Disabled
RL - 2
BL/2 + 2
Enabled
RL - 2
BL/2 + 3
Disabled
RL - 3
BL/2 + 3
Enabled
RL - 3
BL/2 + 4
2tCK
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Synchronous ODT Mode
Synchronous ODT Mode
Synchronous ODT mode is selected whenever the DLL is turned on and locked. Based
on the power-down definition, these modes include the following:
•
•
•
•
•
Any bank active with CKE HIGH
Refresh with CKE HIGH
Idle mode with CKE HIGH
Active power-down mode
Precharge power-down mode
In synchronous ODT mode, RTT(NOM) will be turned on DODTLon clock cycles after
ODT is sampled HIGH by a rising clock edge and turned off DODTLoff clock cycles after
ODT is registered LOW by a rising clock edge. The ODT latency is determined by the
programmed values for: CAS WRITE latency (CWL), additive latency (AL), and parity latency (PL), as well as the programmed state of the preamble.
ODT Latency and Posted ODT
The ODT latencies for synchronous ODT mode are summarized in the table below. For
details, refer to the latency definitions.
Table 74: ODT Latency at DDR4-1600/-1866/-2133/-2400/-2666/-3200
Applicable when write CRC is disabled
Symbol
Parameter
1tCK Preamble
2tCK Preamble
Unit
tCK
DODTLon
Direct ODT turn-on latency
CWL + AL + PL - 2
CWL + AL + PL - 3
DODTLoff
Direct ODT turn-off latency
CWL + AL + PL - 2
CWL + AL + PL - 3
RODTLoff
READ command to internal ODT turn-off
latency
CL + AL + PL - 2
CL + AL + PL - 3
RODTLon4
READ command to RTT(Park) turn-on latency in BC4-fixed
RODTLoff + 4
RODTLoff + 5
RODTLon8
READ command to RTT(Park) turn-on latency in BL8/BC4-OTF
RODTLoff + 6
RODTLoff + 7
ODTH4
ODT Assertion time, BC4 mode
4
5
ODTH8
ODT Assertion time, BL8 mode
6
7
Timing Parameters
In synchronous ODT mode, the following parameters apply:
• DODTLon, DODTLoff, RODTLoff, RODTLon4, RODTLon8, and tADC (MIN)/(MAX).
• tADC (MIN) and tADC (MAX) are minimum and maximum RTT change timing skew
between different termination values. These timing parameters apply to both the synchronous ODT mode and the data termination disable mode.
When ODT is asserted, it must remain HIGH until minimum ODTH4 (BC = 4) or
ODTH8 (BL = 8) is satisfied. If write CRC mode or 2tCK preamble mode is enabled,
ODTH should be adjusted to account for it. ODTHx is measured from ODT first registered HIGH to ODT first registered LOW or from the registration of a WRITE command.
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Synchronous ODT Mode
Figure 203: Synchronous ODT Timing with BL8
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
diff_CK
Command
ODT
DODTLon = WL - 2
DODTLoff = WL - 2
t ADC
DRAM_RTT
tADC
(MAX)
tADC
tADC
(MIN)
RTT(Park)
RTT(NOM)
(MAX)
(MIN)
RTT(Park)
Transitioning
Notes:
1. Example for CWL = 9, AL = 0, PL = 0; DODTLon = AL + PL + CWL - 2 = 7; DODTLoff = AL +
PL + CWL - 2 = 7.
2. ODT must be held HIGH for at least ODTH8 after assertion (T1).
Figure 204: Synchronous ODT with BC4
T0
T1
T2
T3
T4
T5
T18
T19
T20
T21
T22
T23
T36
T37
T38
T39
T40
T41
42
diff_CK
WRS4
Command
ODTH4
ODT
DODTLoff = WL - 2
ODTLcnw= WL - 2
ODTLcwn4 = ODTLcnw + 4
DODTLon = CWL - 2
tADC
(MAX)
tADC
RTT(Park)
(MIN)
tADC
(MAX)
tADC
(MIN)
RTT(NOM)
RTT(Park)
tADC
(MAX)
tADC
(MIN)
RTT(WR)
tADC
tADC
(MAX)
(MIN)
RTT(Park)
DRAM_RTT
Transitioning
Notes:
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1. Example for CWL = 9, AL = 10, PL = 0; DODTLon/off = AL + PL+ CWL - 2 = 17; ODTcnw =
AL + PL+ CWL - 2 = 17.
2. ODT must be held HIGH for at least ODTH4 after assertion (T1).
259
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Synchronous ODT Mode
ODT During Reads
Because the DRAM cannot terminate with RTT and drive with RON at the same time, RTT
may nominally not be enabled until the end of the postamble as shown in the example
below. At cycle T26 the device turns on the termination when it stops driving, which is
determined by tHZ. If the DRAM stops driving early (that is, tHZ is early), then tADC
(MIN) timing may apply. If the DRAM stops driving late (that is, tHZ is late), then the
DRAM complies with tADC (MAX) timing.
Using CL = 11 as an example for the figure below: PL = 0, AL = CL - 1 = 10, RL = PL + AL +
CL = 21, CWL= 9; RODTLoff = RL - 2 = 19, DODTLon = PL + AL + CWL - 2 = 17, 1tCK
preamble.
Figure 205: ODT During Reads
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
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W &.3UHDPEOH
W $'& 0,1
577 120
577 3DUN
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577 120
577 3DUN
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577 3DUN
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W &.3UHDPEOH
W $'& 0$;
W $'& 0,1
W $'& 0$;
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577 120
577 3DUN
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4$ 4$ 4$ 4$ 4$ 4$ 4$ 4$
7UDQVLWLRQLQJ
CCMTD-1406124318-10419
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Dynamic ODT
Dynamic ODT
In certain application cases and to further enhance signal integrity on the data bus, it is
desirable that the termination strength of the device can be changed without issuing an
MRS command. This requirement is supported by the dynamic ODT feature.
Functional Description
Dynamic ODT mode is enabled if bit A9 or A10 of MR2 is set to 1.
• Three RTT values are available: RTT(NOM), RTT(WR), and RTT(Park).
– The value for RTT(NOM) is preselected via bits MR1[10:8].
– The value for RTT(WR) is preselected via bits MR2[11:9].
– The value for RTT(Park) is preselected via bits MR5[8:6].
• During operation without WRITE commands, the termination is controlled as follows:
– Nominal termination strength RTT(NOM) or RTT(Park) is selected.
– RTT(NOM) on/off timing is controlled via ODT pin and latencies DODTLon and
DODTLoff, and RTT(Park) is on when ODT is LOW.
• When a WRITE command (WR, WRA, WRS4, WRS8, WRAS4, and WRAS8) is registered, and if dynamic ODT is enabled, the termination is controlled as follows:
– Latency ODTLcnw after the WRITE command, termination strength R TT(WR) is selected.
– Latency ODTLcwn8 (for BL8, fixed by MRS or selected OTF) or ODTLcwn4 (for
BC4, fixed by MRS or selected OTF) after the WRITE command, termination
strength RTT(WR) is de-selected.
One or two clocks will be added into or subtracted from ODTLcwn8 and ODTLcwn4,
depending on write CRC mode and/or 2tCK preamble enablement.
The following table shows latencies and timing parameters relevant to the on-die termination control in dynamic ODT mode. The dynamic ODT feature is not supported in
DLL-off mode. An MRS command must be used to set RTT(WR) to disable dynamic ODT
externally (MR2[11:9] = 000).
Table 75: Dynamic ODT Latencies and Timing (1tCK Preamble Mode and CRC Disabled)
Name and Description
Abbr. Defined from
Defined to
1600/1866/
2133/2400
2666
2933/3200
Unit
ODT latency for
change from RTT(Park)/
RTT(NOM) to RTT(WR)
Change RTT
ODTLc Registering exnw
ternal WRITE strength from
command
RTT(Park)/
RTT(NOM) to
RTT(WR)
ODTLcnw = WL - 2
tCK
ODT latency for
change from RTT(WR) to
RTT(Park)/RTT(NOM) (BC =
4)
Change RTT
ODTLc Registering exwn4
ternal WRITE strength from
command
RTT(WR) to
RTT(Park)/
RTT(NOM)
ODTLcwn4 = 4 + ODTLcnw
tCK
ODT latency for
change from RTT(WR) to
RTT(Park)/RTT(NOM) (BL =
8)
Change RTT
ODTLc Registering exwn8
ternal WRITE strength from
command
RTT(NOM) to
RTT(WR)
ODTLcwn8 = 6 + ODTLcnw
tCK
(AVG)
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Dynamic ODT
Table 75: Dynamic ODT Latencies and Timing (1tCK Preamble Mode and CRC Disabled) (Continued)
Name and Description
Abbr. Defined from
RTT change skew
tADC
1600/1866/
2133/2400
Defined to
ODTLcnw
ODTLcwn
RTT valid
2666
tADC
2933/3200
tADC
(MIN) =
0.30
tADC (MAX) =
0.70
Unit
tADC
tCK
(MIN) =
0.26
(AVG)
tADC (MAX) =
0.74
(MIN) =
0.28
tADC (MAX) =
0.72
Table 76: Dynamic ODT Latencies and Timing with Preamble Mode and CRC Mode Matrix
1tCK Parameter
2tCK Parameter
Symbol
CRC Off
CRC On
CRC Off
CRC On
Unit
ODTLcnw1
WL - 2
WL - 2
WL - 3
WL - 3
tCK
ODTLcwn4
ODTLcnw + 4
ODTLcnw + 7
ODTLcnw + 5
ODTLcnw + 8
ODTLcwn8
ODTLcnw + 6
ODTLcnw + 7
ODTLcnw + 7
ODTLcnw + 8
1. ODTLcnw = WL - 2 (1tCK preamble) or WL - 3 (2tCK preamble).
Note:
Figure 206: Dynamic ODT (1t CK Preamble; CL = 14, CWL = 11, BL = 8, AL = 0, CRC Disabled)
T0
T1
T2
T5
T6
T7
T8
T9
T10
T11
T14
T15
T16
T17
T18
T19
T20
T21
T22
T23
T24
diff_CK
Command
WR
ODT
DODTLon = WL - 2
DODTLoff = WL - 2
tADC
tADC
(MAX)
RTT(Park)
RTT
tADC
(MAX)
RTT(Park)
RTT(WR)
tADC
tADC
(MIN)
(MIN)
tADC
tADC
(MAX)
RTT(NOM)
(MIN)
(MAX)
RTT(Park)
tADC
(MIN)
ODTLcnw
ODTLcwn
Transitioning
Notes:
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1. ODTLcnw = WL - 2 (1tCK preamble) or WL - 3 (2tCK preamble).
2. If BC4, then ODTLcwn = WL + 4 if CRC disabled or WL + 5 if CRC enabled; If BL8, then
ODTLcwn = WL + 6 if CRC disabled or WL + 7 if CRC enabled.
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Dynamic ODT
Figure 207: Dynamic ODT Overlapped with RTT(NOM) (CL = 14, CWL = 11, BL = 8, AL = 0, CRC Disabled)
T0
T1
T2
T5
T6
T7
T9
T10
T11
T12
T15
T16
T17
T18
T19
T20
T21
T22
T23
T24
T25
diff_CK
Command
WR
ODT
ODTLcnw
ODTLcwn8
tADC
tADC
(MAX)
RTT_NOM
RTT
tADC
(MAX)
RTT_WR
tADC
RTT_NOM
tADC
(MIN)
(MIN)
(MAX)
RTT_PARK
tADC
(MIN)
DODTLoff = CWL -2
Note:
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1. Behavior with WR command issued while ODT is registered HIGH.
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Asynchronous ODT Mode
Asynchronous ODT Mode
Asynchronous ODT mode is selected when the DRAM runs in DLL-off mode. In asynchronous ODT timing mode, the internal ODT command is not delayed by either additive latency (AL) or the parity latency (PL) relative to the external ODT signal (RTT(NOM)).
In asynchronous ODT mode, two timing parameters apply: tAONAS (MIN/MAX), and
tAOFAS (MIN/MAX).
RTT(NOM) Turn-on Time
• Minimum RTT(NOM) turn-on time (tAONAS [MIN]) is when the device termination circuit leaves RTT(Park) and ODT resistance begins to turn on.
• Maximum RTT(NOM) turn-on time (tAONAS [MAX]) is when the ODT resistance has
reached RTT(NOM).
• tAONAS (MIN) and tAONAS (MAX) are measured from ODT being sampled HIGH.
RTT(NOM) Turn-off Time
• Minimum RTT(NOM) turn-off time (tAOFAS [MIN]) is when the device's termination
circuit starts to leave RTT(NOM).
• Maximum RTT(NOM) turn-off time (tAOFAS [MAX]) is when the on-die termination has
reached RTT(Park).
• tAOFAS (MIN) and tAOFAS (MAX) are measured from ODT being sampled LOW.
Figure 208: Asynchronous ODT Timings with DLL Off
T0
T1
T2
T3
T4
T5
T6
Ti
Ti + 1
Ti + 2
Ti + 3
Ti + 4
Ti + 5
Ti + 6
Ta
Tb
diff_CK
CKE
tIH
tIS
tIH
tIS
ODT
tAONAS
RTT
(MAX)
tAONAS
RTT(Park)
(MIN)
RTT(NOM)
tAONAS
(MIN)
tAONAS
(MAX)
Transitioning
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Electrical Specifications
Electrical Specifications
Absolute Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Although "unlimited" row accesses to the same row is allowed
within the refresh period; excessive row accesses to the same row over a long term can
result in degraded operation.
Table 77: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
Notes
V
1
VDD
Voltage on VDD pin relative to VSS
–0.4
1.5
VDDQ
Voltage on VDDQ pin relative to VSS
–0.4
1.5
V
1
VPP
Voltage on VPP pin relative to VSS
–0.4
3.0
V
3
VIN, VOUT
Voltage on any pin relative to VSS
–0.4
1.5
V
Storage temperature
–55
150
°C
TSTG
2
1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be
greater than 0.6 × VDDQ. When VDD and VDDQ are 85
125
°C
2
Notes:
1. The normal temperature range specifies the temperatures at which all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between –40°C to 85°C under all operating conditions for the commercial offering.
2. Some applications require operation of the commercial and industrial temperature
DRAMs in the extended temperature range (between 85°C and 125°C case temperature). Full specifications are supported in this range, but the following additional conditions apply:
• REFRESH commands must be doubled in frequency, reducing the refresh interval tREFI
to 3.9μs. It is also possible to specify a component with 1X refresh (tREFI to 7.8μs) in
the extended temperature range.
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Electrical Characteristics – AC and DC Operating Conditions
• REFRESH command must be issued once every 0.975μs if TC is greater than 105°C, once
every 1.95μs if TC is greater than or equal to 95°C, once every 3.9μs if TC is greater
than 85°C, and once every 7.8μs if TC is less than 85°C.
Electrical Characteristics – AC and DC Operating Conditions
Supply Operating Conditions
Table 79: Recommended Supply Operating Conditions
Rating
Symbol
Parameter
Min
Typ
Max
Unit
Notes
VDD
Supply voltage
1.14
1.2
1.26
V
1, 2, 3, 4, 5
VDDQ
Supply voltage for output
1.14
1.2
1.26
V
1, 2, 6
Wordline supply voltage
2.375
2.5
2.750
V
7
VPP
Notes:
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
3. VDD slew rate between 300mV and 80% of VDD,min shall be between 0.004 V/ms and 600
V/ms, 20 MHz band-limited measurement.
4. VDD ramp time from 300mV to VDD,min shall be no longer than 200ms.
5. A stable valid VDD level is a set DC level (0 Hz to 250 KHz) and must be no less than
VDD,min and no greater than VDD,max. If the set DC level is altered anytime after initialization, the DLL reset and calibrations must be performed again after the new set DC level
is final. AC noise of ±60mV (greater than 250 KHz) is allowed on VDD provided the noise
doesn't alter VDD to less than VDD,min or greater than VDD,max.
6. A stable valid VDDQ level is a set DC level (0 Hz to 250 KHz) and must be no less than
VDDQ,min and no greater than VDDQ,max. If the set DC level is altered anytime after initialization, the DLL reset and calibrations must be performed again after the new set DC
level is final. AC noise of ±60mV (greater than 250 KHz) is allowed on VDDQ provided the
noise doesn't alter VDDQ to less than VDDQ,min or greater than VDDQ,max.
7. A stable valid VPP level is a set DC level (0 Hz to 250 KHz) and must be no less than
VPP,min and no greater than VPP,max. If the set DC level is altered anytime after initialization, the DLL reset and calibrations must be performed again after the new set DC level
is final. AC noise of ±120mV (greater than 250 KHz) is allowed on VPP provided the noise
doesn't alter VPP to less than VPP,min or greater than VPP,max.
Table 80: VDD Slew Rate
Symbol
Min
Max
Unit
Notes
VDD_sl
0.004
600
V/ms
1, 2
VDD_on
–
200
ms
3
Notes:
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1. Measurement made between 300mV and 80% VDD (minimum level).
2. The DC bandwidth is limited to 20 MHz.
3. Maximum time to ramp VDD from 300 mV to VDD minimum.
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Electrical Characteristics – AC and DC Operating Conditions
Leakages
Table 81: Leakages
Condition
Symbol
Min
Max
Unit
Notes
Input leakage (excluding ZQ and TEN)
IIN
–2
2
μA
1
ZQ leakage
IZQ
–50
10
μA
1
TEN leakage
ITEN
–6
10
μA
1, 2
VREFCA leakage
IVREFCA
–2
2
μA
3
Output leakage: VOUT = VDDQ
IOZpd
–
10
μA
4
Output leakage: VOUT = VSSQ
IOZpu
–50
–
μA
4, 5
Notes:
1.
2.
3.
4.
5.
Input under test 0V < VIN < 1.1V.
Additional leakage due to weak pull-down.
VREFCA = VDD/2, VDD at valid level after initialization.
DQs are disabled.
ODT is disabled with the ODT input HIGH.
VREFCA Supply
VREFCA is to be supplied to the DRAM and equal to V DD/2. The V REFCA is a reference supply input and therefore does not draw biasing current.
The DC-tolerance limits and AC-noise limits for the reference voltages V REFCA are illustrated in the figure below. The figure shows a valid reference voltage V REF(t) as a function
of time (VREF stands for V REFCA). V REF(DC) is the linear average of V REF(t) over a very long
period of time (1 second). This average has to meet the MIN/MAX requirements. Furthermore, V REF(t) may temporarily deviate from V REF(DC) by no more than ±1% V DD for
the AC-noise limit.
Figure 209: VREFDQ Voltage Range
Voltage
VDD
VREF(t)
VREF AC-noise
VREF(DC) MAX
VREF(DC)
VDD/2
VREF(DC) MIN
VSS
Time
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Electrical Characteristics – AC and DC Operating Conditions
The voltage levels for setup and hold time measurements are dependent on V REF. V REF is
understood as V REF(DC), as defined in the above figure. This clarifies that DC-variations
of V REF affect the absolute voltage a signal has to reach to achieve a valid HIGH or LOW
level, and therefore, the time to which setup and hold is measured. System timing and
voltage budgets need to account for V REF(DC) deviations from the optimum position
within the data-eye of the input signals. This also clarifies that the DRAM setup/hold
specification and derating values need to include time and voltage associated with V REF
AC-noise. Timing and voltage effects due to AC-noise on V REF up to the specified limit
(±1% of V DD) are included in DRAM timings and their associated deratings.
VREFDQ Supply and Calibration Ranges
The device internally generates its own V REFDQ. DRAM internal V REFDQ specification parameters: voltage range, step size, V REF step time, V REF full step time, and V REF valid level
are used to help provide estimated values for the internal V REFDQ and are not pass/fail
limits. The voltage operating range specifies the minimum required range for DDR4
SDRAM devices. The minimum range is defined by V REFDQ,min and V REFDQ,max. A calibration sequence should be performed by the DRAM controller to adjust V REFDQ and
optimize the timing and voltage margin of the DRAM data input receivers.
Table 82: VREFDQ Specification
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Range 1 VREFDQ operating points
VREFDQ R1
60%
–
92%
VDDQ
1, 2
Range 2 VREFDQ operating points
VREFDQ R2
45%
–
77%
VDDQ
1, 2
VREF,step
0.5%
0.65%
0.8%
VDDQ
3
VREF,set_tol
–1.625%
0%
1.625%
VDDQ
4, 5, 6
–0.15%
0%
0.15%
VDDQ
4, 7, 8
VREF step size
VREF set tolerance
VREF step time
VREF valid tolerance
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
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VREF,time
–
–
150
ns
9, 10, 11
VREF_val_tol
–0.15%
0%
0.15%
VDDQ
12
VREF(DC) voltage is referenced to VDDQ(DC). VDDQ(DC) is 1.2V.
DRAM range 1 or range 2 is set by the MRS6[6]6.
VREF step size increment/decrement range. VREF at DC level.
VREF,new = VREF,old ±n × VREF,step; n = number of steps. If increment, use “+,” if decrement,
use “-.”
For n >4, the minimum value of VREF setting tolerance = VREF,new - 1.625% × VDDQ. The
maximum value of VREF setting tolerance = VREF,new + 1.625% × VDDQ.
Measured by recording the MIN and MAX values of the VREF output over the range,
drawing a straight line between those points, and comparing all other VREF output settings to that line.
For n ≤4, the minimum value of VREF setting tolerance = VREF,new - 0.15% × VDDQ. The
maximum value of VREF setting tolerance = VREF,new + 0.15% × VDDQ.
Measured by recording the MIN and MAX values of the VREF output across four consecutive steps (n = 4), drawing a straight line between those points, and comparing all VREF
output settings to that line.
Time from MRS command to increment or decrement one step size for VREF.
Time from MRS command to increment or decrement more than one step size up to the
full range of VREF.
If the VREF monitor is enabled, VREF must be derated by +10ns if DQ bus load is 0pF and
an additional +15 ns/pF of DQ bus loading.
268
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Electrical Characteristics – AC and DC Operating Conditions
12. Only applicable for DRAM component-level test/characterization purposes. Not applicable for normal mode of operation. VREF valid qualifies the step times, which will be characterized at the component level.
VREFDQ Ranges
MR6[6] selects range 1 (60% to 92.5% of V DDQ) or range 2 (45% to 77.5% of V DDQ), and
MR6[5:0] sets the V REFDQ level, as listed in the following table. The values in MR6[6:0]
will update the V DDQ range and level independent of MR6[7] setting. It is recommended
MR6[7] be enabled when changing the settings in MR6[6:0], and it is highly recommended MR6[7] be enabled when changing the settings in MR6[6:0] multiple times during a
calibration routine.
Table 83: VREFDQ Range and Levels
MR6[5:0]
MR6[6] 0 =
Range 1
MR6[6] 1 =
Range 2
MR6[5:0]
MR6[6] 0 =
Range 1
MR6[6] 1 =
Range 2
00 0000
60.00%
45.00%
01 1010
76.90%
61.90%
00 0001
60.65%
45.65%
01 1011
77.55%
62.55%
00 0010
61.30%
46.30%
01 1100
78.20%
63.20%
00 0011
61.95%
46.95%
01 1101
78.85%
63.85%
00 0100
62.60%
47.60%
01 1110
79.50%
64.50%
00 0101
63.25%
48.25%
01 1111
80.15%
65.15%
00 0110
63.90%
48.90%
10 0000
80.80%
65.80%
00 0111
64.55%
49.55%
10 0001
81.45%
66.45%
00 1000
65.20%
50.20%
10 0010
82.10%
67.10%
00 1001
65.85%
50.85%
10 0011
82.75%
67.75%
00 1010
66.50%
51.50%
10 0100
83.40%
68.40%
00 1011
67.15%
52.15%
10 0101
84.05%
69.05%
00 1100
67.80%
52.80%
10 0110
84.70%
69.70%
00 1101
68.45%
53.45%
10 0111
85.35%
70.35%
00 1110
69.10%
54.10%
10 1000
86.00%
71.00%
00 1111
69.75%
54.75%
10 1001
86.65%
71.65%
01 0000
70.40%
55.40%
10 1010
87.30%
72.30%
01 0001
71.05%
56.05%
10 1011
87.95%
72.95%
01 0010
71.70%
56.70%
10 1100
88.60%
73.60%
01 0011
72.35%
57.35%
10 1101
89.25%
74.25%
01 0100
73.00%
58.00%
10 1110
89.90%
74.90%
01 0101
73.65%
58.65%
10 1111
90.55%
75.55%
01 0110
74.30%
59.30%
11 0000
91.20%
76.20%
01 0111
74.95%
59.95%
11 0001
91.85%
76.85%
01 1000
75.60%
60.60%
11 0010
92.50%
77.50%
01 1001
76.25%
61.25%
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11 0011 to 11 1111 are reserved
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Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Electrical Characteristics – AC and DC Single-Ended Input Measurement
Levels
RESET_n Input Levels
Table 84: RESET_n Input Levels (CMOS)
Parameter
Symbol
Min
Max
Unit
Note
AC input high voltage
VIH(AC)_RESET
0.8 × VDD
VDD
V
1
DC input high voltage
VIH(DC)_RESET
0.7 × VDD
VDD
V
2
DC input low voltage
VIL(DC)_RESET
VSS
0.3 × VDD
V
3
AC input low voltage
VIL(AC)_RESET
VSS
0.2 × VDD
V
4
tR_RESET
–
1
μs
5
RESET pulse width after power-up
tPW_RESET_S
1
–
μs
6, 7
RESET pulse width during power-up
tPW_RESET_L
200
–
μs
6
Rising time
Notes:
1. Overshoot should not exceed the VIN shown in the Absolute Maximum Ratings table.
2. After RESET_n is registered HIGH, the RESET_n level must be maintained above
VIH(DC)_RESET, otherwise operation will be uncertain until it is reset by asserting RESET_n
signal LOW.
3. After RESET_n is registered LOW, the RESET_n level must be maintained below VIL(DC)_REt
SET during PW_RESET, otherwise the DRAM may not be reset.
4. Undershoot should not exceed the VIN shown in the Absolute Maximum Ratings table.
5. Slope reversal (ring-back) during this level transition from LOW to HIGH should be mitigated as much as possible.
6. RESET is destructive to data contents.
7. See RESET Procedure at Power Stable Condition figure.
Figure 210: RESET_n Input Slew Rate Definition
tPW_RESET
VIH(AC)_RESET,min
VIH(DC)_RESET,min
VIL(DC)_RESET,max
VIL(AC)_RESET,max
tR_RESET
Command/Address Input Levels
Table 85: Command and Address Input Levels: DDR4-1600 Through DDR4-2400
Parameter
Symbol
Min
Max
Unit
Note
AC input high voltage
VIH(AC)
VREF + 100
VDD5
mV
1, 2, 3
DC input high voltage
VIH(DC)
VREF + 75
VDD
mV
1, 2
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Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Table 85: Command and Address Input Levels: DDR4-1600 Through DDR4-2400 (Continued)
Parameter
Symbol
Min
Max
Unit
Note
DC input low voltage
VIL(DC)
VSS
VREF - 75
mV
1, 2
AC input low voltage
VIL(AC)
VSS5
VREF - 100
mV
1, 2, 3
VREFFCA(DC)
0.49 × VDD
0.51 × VDD
V
4
Reference voltage for CMD/ADDR inputs
Notes:
1.
2.
3.
4.
For input except RESET_n. VREF = VREFCA(DC).
VREF = VREFCA(DC).
Input signal must meet VIL/VIH(AC) to meet tIS timings and VIL/VIH(DC) to meet tIH timings.
The AC peak noise on VREF may not allow VREF to deviate from VREFCA(DC) by more than
±1% VDD (for reference: approximately ±12mV).
5. Refer to “Overshoot and Undershoot Specifications.”
Table 86: Command and Address Input Levels: DDR4-2666
Parameter
Symbol
Min
Max
Unit
Note
AC input high voltage
VIH(AC)
VREF + 90
VDD5
mV
1, 2, 3
DC input high voltage
VIH(DC)
VREF + 65
VDD
mV
1, 2
DC input low voltage
VIL(DC)
VSS
VREF - 65
mV
1, 2
AC input low voltage
VIL(AC)
VSS5
VREF - 90
mV
1, 2, 3
VREFFCA(DC)
0.49 × VDD
0.51 × VDD
V
4
Reference voltage for CMD/ADDR inputs
Notes:
1.
2.
3.
4.
For input except RESET_n. VREF = VREFCA(DC).
VREF = VREFCA(DC).
Input signal must meet VIL/VIH(AC) to meet tIS timings and VIL/VIH(DC) to meet tIH timings.
The AC peak noise on VREF may not allow VREF to deviate from VREFCA(DC) by more than
±1% VDD (for reference: approximately ±12mV).
5. Refer to “Overshoot and Undershoot Specifications.”
Table 87: Command and Address Input Levels: DDR4-2933 and DDR4-3200
Parameter
Symbol
Min
Max
Unit
Note
AC input high voltage
VIH(AC)
VREF + 90
VDD5
mV
1, 2, 3
DC input high voltage
VIH(DC)
VREF + 65
VDD
mV
1, 2
DC input low voltage
VIL(DC)
VSS
VREF - 65
mV
1, 2
AC input low voltage
VIL(AC)
VSS5
VREF - 90
mV
1, 2, 3
VREFFCA(DC)
0.49 × VDD
0.51 × VDD
V
4
Reference voltage for CMD/ADDR inputs
Notes:
CCMTD-1406124318-10419
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1.
2.
3.
4.
For input except RESET_n. VREF = VREFCA(DC).
VREF = VREFCA(DC).
Input signal must meet VIL/VIH(AC) to meet tIS timings and VIL/VIH(DC) to meet tIH timings.
The AC peak noise on VREF may not allow VREF to deviate from VREFCA(DC) by more than
±1% VDD (for reference: approximately ±12mV).
5. Refer to “Overshoot and Undershoot Specifications.”
271
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Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Table 88: Single-Ended Input Slew Rates
Parameter
Single-ended input slew rate – CA
Notes:
1.
2.
3.
4.
Symbol
Min
Max
Unit
Note
SRCA
1.0
7.0
V/ns
1, 2, 3, 4
For input except RESET_n.
VREF = VREFCA(DC).
tIS/tIH timings assume SR
CA = 1V/ns.
Measured between VIH(AC) and VIL(AC) for falling edges and between VIL(AC) and VIH(AC)
for rising edges
Figure 211: Single-Ended Input Slew Rate Definition
TRse
TFse
VIH(AC)
VIH(DC)
VREFCA
VIL(DC)
VIL(AC)
Command, Control, and Address Setup, Hold, and Derating
The total tIS (setup time) and tIH (hold time) required is calculated to account for slew
rate variation by adding the data sheet tIS (base) values, the V IL(AC)/VIH(AC) points, and
tIH (base) values, the V
t
t
IL(DC)/VIH(DC) points; to the Δ IS and Δ IH derating values, respectively. The base values are derived with single-end signals at 1V/ns and differential
clock at 2 V/ns. Example: tIS (total setup time) = tIS (base) + ΔtIS. For a valid transition,
the input signal has to remain above/below V IH(AC)/VIL(AC) for the time defined by tVAC.
Although the total setup time for slow slew rates might be negative (for example, a valid
input signal will not have reached V IH(AC)/VIL(AC) at the time of the rising clock transition), a valid input signal is still required to complete the transition and to reach
VIH(AC)/VIL(AC). For slew rates that fall between the values listed in derating tables, the
derating values may be obtained by linear interpolation.
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V IL(DC)max and the first crossing of V IH(AC)min that does not ring back below V IH(DC)min . Setup (tIS) nominal slew rate for a falling signal is defined as the slew
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8Gb: x8, x16 Automotive DDR4 SDRAM
Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
rate between the last crossing of V IH(DC)min and the first crossing of V IL(AC)max that does
not ring back above V IL(DC)max.
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V IL(DC)max and the first crossing of V IH(AC)min that does not ring back below V IH(DC)min. Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate
between the last crossing of V IH(DC)min and the first crossing of V IL(AC)minthat does not
ring back above V IL(DC)max.
Table 89: Command and Address Setup and Hold Values Referenced – AC/DC-Based
Symbol
tIS(base,
1600
1866
2133
2400
2666
2933
3200
Unit
Reference
115
100
80
62
–
–
–
ps
VIH(AC)/VIL(AC)
AC100)
tIH(base,
DC75)
140
125
105
87
–
–
–
ps
VIH(DC)/VIL(DC)
tIS(base,
AC90)
–
–
–
–
55
48
40
ps
VIH(AC)/VIL(AC)
tIH(base,
DC65)
tIS/tIH(Vref)
–
–
–
–
80
73
65
ps
VIH(DC)/VIL(DC)
215
200
180
162
145
138
130
ps
VIH(DC)/VIL(DC)
Table 90: Derating Values for tIS/tIH – AC100DC75-Based
ΔtIS with AC100 Threshold, ΔtIH with DC75 Threshold Derating (ps) – AC/DC-Based
CMD/
ADDR
Slew Rate
V/ns
CK, CK# Differential Slew Rate
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIH
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
7.0
76
54
76
55
77
56
79
58
82
60
86
64
94
73
111
89
6.0
73
53
74
53
75
54
77
56
79
58
83
63
92
71
108
88
5.0
70
50
71
51
72
52
74
54
76
56
80
60
88
68
105
85
4.0
65
46
66
47
67
48
69
50
71
52
75
56
83
65
100
81
3.0
57
40
57
41
58
42
60
44
63
46
67
50
75
58
92
75
2.0
40
28
41
28
42
29
44
31
46
33
50
38
58
46
75
63
1.5
23
15
24
16
25
17
27
19
29
21
33
25
42
33
58
50
1.0
–10
–10
–9
–9
–8
–8
–6
–6
–4
–4
0
0
8
8
25
25
0.9
–17
–14
–16
–14
–15
–13
–13
–10
–11
–8
–7
–4
1
4
18
21
0.8
–26
–19
–25
–19
–24
–18
–22
–16
–20
–14
–16
–9
–7
–1
9
16
0.7
–37
–26
–36
–25
–35
–24
–33
–22
–31
–20
–27
–16
–18
–8
–2
9
0.6
–52
–35
–51
–34
–50
–33
–48
–31
–46
–29
–42
–25
–33
–17
–17
0
0.5
–73
–48
–72
–47
–71
–46
–69
–44
–67
–42
–63
–38
–54
–29
–38
–13
0.4
–104
–66
–103
–66
–102
–65
–100
–63
–98
–60
–94
–56
–85
–48
–69
–31
10.0 V/ns
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8.0 V/ns
6.0 V/ns
4.0 V/ns
273
3.0 V/ns
2.0 V/ns
1.5 V/ns
1.0 V/ns
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Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Table 91: Derating Values for tIS/tIH – AC90/DC65-Based
ΔtIS with AC90 Threshold, ΔtIH with DC65 Threshold Derating (ps) – AC/DC-Based
CMD/
ADDR
Slew Rate
V/ns
CK, CK# Differential Slew Rate
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIH
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
7.0
68
47
69
47
70
48
72
50
73
52
77
56
85
63
100
78
6.0
66
45
67
46
68
47
69
49
71
50
75
54
83
62
98
77
5.0
63
43
64
44
65
45
66
46
68
48
72
52
80
60
95
75
4.0
59
40
59
40
60
41
62
43
64
45
68
49
75
56
90
71
3.0
51
34
52
35
53
36
54
38
56
40
60
43
68
51
83
66
2.0
36
24
37
24
38
25
39
27
41
29
45
33
53
40
68
55
1.5
21
13
22
13
23
14
24
16
26
18
30
22
38
29
53
44
1.0
–9
–9
–8
–8
–8
–8
–6
–6
–4
–4
0
0
8
8
23
23
0.9
–15
–13
–15
–12
–14
–11
–12
–9
–10
–7
–6
–4
1
4
16
19
0.8
–23
–17
–23
–17
–22
–16
–20
–14
–18
–12
–14
–8
–7
–1
8
14
0.7
–34
–23
–33
–22
–32
–21
–30
–20
–28
–18
–25
–14
–17
–6
–2
9
0.6
–47
–31
–47
–30
–46
–29
–44
–27
–42
–25
–38
–22
–31
–14
–16
1
0.5
–67
–42
–66
–41
–65
–40
–63
–38
–61
–36
–58
–33
–50
–25
–35
–10
0.4
–95
–58
–95
–57
–94
–56
–92
–54
–90
–53
–86
–49
–79
–41
–64
–26
10.0 V/ns
8.0 V/ns
6.0 V/ns
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.5 V/ns
1.0 V/ns
Data Receiver Input Requirements
The following parameters apply to the data receiver Rx MASK operation detailed in the
Write Timing section, Data Strobe-to-Data Relationship.
The rising edge slew rates are defined by srr1 and srr2. The slew rate measurement
points for a rising edge are shown in the figure below. A LOW-to-HIGH transition time,
tr1, is measured from 0.5 × V diVW,max below V CENTDQ,midpoint to the last transition
through 0.5 × V diVW,max above V CENTDQ,midpoint; tr2 is measured from the last transition
through 0.5 × V diVW,max above V CENTDQ,midpoint to the first transition through the 0.5 ×
VIHL(AC)min above V CENTDQ,midpoint.
The falling edge slew rates are defined by srf1 and srf2. The slew rate measurement
points for a falling edge are shown in the figure below. A HIGH-to-LOW transition time,
tf1, is measured from 0.5 × V diVW,max above V CENTDQ,midpoint to the last transition
through 0.5 × V diVW,max below V CENTDQ,midpoint; tf2 is measured from the last transition
through 0.5 × V diVW,max below V CENTDQ,midpoint to the first transition through the 0.5 ×
VIHL(AC)min below V CENTDQ,midpoint.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Figure 212: DQ Slew Rate Definitions
VCENTDQ,midpoint
0.5 × VdiVW,max
VdiVW,max
0.5 ×
VIHL(AC)min
tr1
tf1
0.5 × VdiVW,max
Rx Mask
VCENTDQ,midpoint
0.5 × VdiVW,max
VdiVW,max
0.5 ×
VIHL(AC)min
0.5 ×
VIHL(AC)min
0.5 × VdiVW,max
Rx Mask
0.5 ×
VIHL(AC)min
VIHL(AC)min
VIHL(AC)min
tr2
tf2
Notes:
1.
2.
3.
4.
Rising edge slew rate equation srr1 = VdiVW,max/(tr1).
Rising edge slew rate equation srr2 = (VIHL(AC)min - VdiVW,max )/(2 × tr2).
Falling edge slew rate equation srf1 = VdiVW,max/(tf1).
Falling edge slew rate equation srf2 = (VIHL(AC)min - VdiVW,max )/(2 × tf2).
Table 92: DQ Input Receiver Specifications
Note 1 applies to the entire table
DDR4-1600,
1866, 2133
DDR4-2400
DDR4-2666
DDR4-2933
DDR4-3200
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Not
es
VIN Rx mask input
peak-to-peak
VdiVW
–
136
–
130
–
120
–
115
–
110
mV
2, 3
DQ Rx input timing window
TdiVW
–
0.2
–
0.2
–
0.22
–
0.23
–
0.23
UI
2, 3
DQ AC input
swing peak-topeak
VIHL(AC)
186
–
160
–
150
–
145
–
140
–
mV
4, 5
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Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Table 92: DQ Input Receiver Specifications (Continued)
Note 1 applies to the entire table
DDR4-1600,
1866, 2133
DDR4-2400
DDR4-2666
DDR4-2933
DDR4-3200
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Not
es
DQ input pulse
width
TdiPW
0.58
–
0.58
–
0.58
–
0.58
–
0.58
–
UI
6
DQS-to-DQ Rx
mask offset
tDQS2D
–0.17
0.17
–0.17
0.17
–0.19
0.19
–0.22
0.22
–0.22
0.22
UI
7
DQ-to-DQ Rx mask
offset
tDQ2DQ
–
0.1
–
0.1
–
0.105
–
0.115
–
0.125
UI
8
srr1, srf1
Input slew rate
over VdiVW if tCK ≥
0.937ns
1
9
1
9
1
9
1
9
1
9
V/ns
9
Input slew rate
over VdiVW if
0.937ns > tCK ≥
0.625ns
srr1, srf1
–
–
1.25
9
1.25
9
1.25
9
1.25
9
V/ns
9
Rising input slew
rate over 1/2
VIHL(AC)
srr2
0.2 ×
srr1
9
0.2 ×
srr1
9
0.2 ×
srr1
9
0.2 ×
srr1
9
0.2 ×
srr1
9
V/ns
10
Falling input slew
rate over 1/2
VIHL(AC)
srf2
0.2 ×
srf1
9
0.2 ×
srf1
9
0.2 ×
srf1
9
0.2 ×
srf1
9
0.2 ×
srf1
9
V/ns
10
Q
Notes:
1. All Rx mask specifications must be satisfied for each UI. For example, if the minimum input pulse width is violated when satisfying TdiVW (MIN), VdiVW,max, and minimum slew
rate limits, then either TdiVW (MIN) or minimum slew rates would have to be increased
to the point where the minimum input pulse width would no longer be violated.
2. Data Rx mask voltage and timing total input valid window where VdiVW is centered
around VCENTDQ,midpoint after VREFDQ training is completed. The data Rx mask is applied
per bit and should include voltage and temperature drift terms. The input buffer design
specification is to achieve at least a BER =1e- 16 when the Rx mask is not violated.
3. Defined over the DQ internal VREF range 1.
4. Overshoot and undershoot specifications apply.
5. DQ input pulse signal swing into the receiver must meet or exceed VIHL(AC)min. VIHL(AC)min
is to be achieved on an UI basis when a rising and falling edge occur in the same UI (a
valid TdiPW).
6. DQ minimum input pulse width defined at the VCENTDQ,midpoint.
7. DQS-to-DQ Rx mask offset is skew between DQS and DQ within a nibble (x4) or word
(x8, x16 [for x16, the upper and lower bytes are treated as separate x8s]) at the SDRAM
balls over process, voltage, and temperature.
8. DQ-to-DQ Rx mask offset is skew between DQs within a nibble (x4) or word (x8, x16) at
the SDRAM balls for a given component over process, voltage, and temperature.
9. Input slew rate over VdiVW mask centered at VCENTDQ,midpoint. Slowest DQ slew rate to
fastest DQ slew rate per transition edge must be within 1.7V/ns of each other.
10. Input slew rate between VdiVW mask edge and VIHL(AC)min points.
The following figure shows the Rx mask relationship to the input timing specifications
relative to system tDS and tDH. The classical definition for tDS/tDH required a DQ rising
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Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
and falling edges to not violate tDS and tDH relative to the DQS strobe at any time; however, with the Rx mask tDS and tDH can shift relative to the DQS strobe provided the
input pulse width specification is satisfied and the Rx mask is not violated.
Figure 213: Rx Mask Relative to tDS/tDH
TdiPW
VIH(DC)
VdiVW
0.5 × VdiVW
VCENTDQ,pin mean
Rx
Mask
0.5 × VdiVW
VIL(DC)
tf1
tr1
TdiVW
tDS
tDH
= Greater of 0.5 × TdiVW
or
0.5 × (TdiPW + VdiVW/tf1)
= Greater of 0.5 × TdiVW
or
0.5 × (TdiPW + VdiVW/tr1)
DQS_c
DQS_t
The following figure and table show an example of the worst case Rx mask required if
the DQS and DQ pins do not have DRAM controller to DRAM write DQ training. The
figure and table show that without DRAM write DQ training, the Rx mask would increase from 0.2UI to essentially 0.54UI. This would also be the minimum tDS and tDH
required as well.
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Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Figure 214: Rx Mask Without Write Training
TdiVW + 2 × tDQS2DQ
VdiVW
VIH(DC)
0.5 × VdiVW
Rx Mask
VCENTDQ,midpoint
0.5 × VdiVW
VIL(DC)
tDS
tDH
0.5 × TdiVW + tDQS2DQ 0.5 × TdiVW + tDQS2DQ
DQS_c
DQS_t
Table 93: Rx Mask and tDS/tDH without Write Training
Rx Mask
with Write
Train
(ps)
DDR4
VIHL(AC)
(mV)
TdiPW
(UI)
VdiVW
(mV)
TdiVW
(UI)
tDQS2DQ
tDQ2DQ
(UI)
(UI)
1600
186
0.58
136
0.2
±0.17
0.1
125
1866
186
0.58
136
0.2
±0.17
0.1
107.1
289
2133
186
0.58
136
0.2
±0.17
0.1
94
253
2400
160
0.58
130
0.2
±0.17
0.1
83.3
225
2666
150
0.58
120
0.22
±0.19
0.105
82.5
225
2933
145
0.58
115
0.23
±0.22
0.115
78.4
228
3200
140
0.58
110
0.23
±0.22
0.125
71.8
209
Note:
tDS
+ tDH
(ps)
338
1. VIHL(AC), VdiVW, and VILH(DC) referenced to VCENTDQ,midpoint.
Connectivity Test (CT) Mode Input Levels
Table 94: TEN Input Levels (CMOS)
Parameter
Symbol
Min
Max
Unit
Note
TEN AC input high voltage
VIH(AC)_TEN
0.8 × VDD
VDD
V
1
TEN DC input high voltage
VIH(DC)_TEN
0.7 × VDD
VDD
V
TEN DC input low voltage
VIL(DC)_TEN
VSS
0.3 × VDD
V
TEN AC input low voltage
VIL(AC)_TEN
VSS
0.2 × VDD
V
tF_TEN
–
10
ns
TEN falling time
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Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Table 94: TEN Input Levels (CMOS) (Continued)
Parameter
TEN rising time
Symbol
Min
Max
Unit
tR_TEN
–
10
ns
Note
1. Overshoot should not exceed the VIN values in the Absolute Maximum Ratings table.
2. Undershoot should not exceed the VIN values in the Absolute Maximum Ratings table.
Notes:
Figure 215: TEN Input Slew Rate Definition
VIH(AC)_TENmin
VIH(DC)_TENmin
VIL(DC)_TENmin
VIL(AC)_TENmin
tF_TEN
tR_TEN
Table 95: CT Type-A Input Levels
Parameter
Symbol
Min
Max
Unit
Note
CTipA AC input high voltage
VIH(AC)
VREF + 200
VDD11
V
2, 3
CTipA DC input high voltage
VIH(DC)
VREF + 150
VDD
V
2, 3
CTipA DC input low voltage
VIL(DC)
VSS
VREF - 150
V
2, 3
1
VIL(AC)
VSS1
VREF - 200
V
2, 3
CTipA falling time
tF_CTipA
–
5
ns
2
CTipA rising time
tR_CTipA
–
5
ns
2
CTipA AC input low voltage
Notes:
1. Refer to Overshoot and Undershoot Specifications.
2. CT Type-A inputs: CS_n, BG[1:0], BA[1:0], A[9:0], A10/AP, A11, A12/BC_n, A13, WE_n/A14,
CAS_n/A15, RAS_n/A16, A17, CKE, ACT_n, ODT, CLK_t, CLK_C, PAR.
3. VREFCA = 0.5 × VDD.
Figure 216: CT Type-A Input Slew Rate Definition
VIH(AC)_CTipAmin
VIH(DC)_CTipAmin
VREFCA
VIL(DC)_CTipAmax
VIL(AC)_CTipAmax
tR_CTipA
tF_CTipA
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Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Table 96: CT Type-B Input Levels
Parameter
Symbol
Min
Max
Unit
Note
CTipB AC input high voltage
VIH(AC)
VREF + 300
VDD11
V
2, 3
CTipB DC input high voltage
VIH(DC)
VREF + 200
VDD
V
2, 3
CTipB DC input low voltage
VIL(DC)
VSS
VREF - 200
V
2, 3
1
VIL(AC)
VSS1
VREF - 300
V
2, 3
CTipB falling time
tF_CTipB
–
5
ns
2
CTipB rising time
tR_CTipB
–
5
ns
2
CTipB AC input low voltage
Notes:
1. Refer to Overshoot and Undershoot Specifications.
2. CT Type-B inputs: DML_n/DBIL_n, DMU_n/DBIU_n and DM_n/DBI_n.
3. VREFDQ should be 0.5 × VDD
Figure 217: CT Type-B Input Slew Rate Definition
VIH(AC)_CTipBmin
VIH(DC)_CTipBmin
VREFDQ
VIL(DC)_CTipBmax
VIL(AC)_CTipBmax
tF_CTipB
tR_CTipB
Table 97: CT Type-C Input Levels (CMOS)
Parameter
Symbol
Min
Max
Unit
Note
1
V
2
CTipC AC input high voltage
VIH(AC)_CTipC
0.8 × VDD
VDD
CTipC DC input high voltage
VIH(DC)_CTipC
0.7 × VDD
VDD
V
2
CTipC DC input low voltage
VIL(DC)_CTipC
VSS
0.3 × VDD
V
2
CTipC AC input low voltage
VIL(AC)_CTipC
VSS1
0.2 × VDD
V
2
CTipC falling time
tF_CTipC
–
10
ns
2
CTipC rising time
tR_CTipC
–
10
ns
2
Notes:
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1. Refer to Overshoot and Undershoot Specifications.
2. CT Type-C inputs: Alert_n.
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Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Figure 218: CT Type-C Input Slew Rate Definition
VIH(AC)_TENmin
VIH(DC)_TENmin
VIL(DC)_TENmin
VIL(AC)_TENmin
tF_TEN
tR_TEN
Table 98: CT Type-D Input Levels
Parameter
Symbol
Min
Max
Unit
Note
CTipD AC input high voltage
VIH(AC)_CTipD
0.8 × VDD
VDD
V
4
CTipD DC input high voltage
VIH(DC)_CTipD
0.7 × VDD
VDD
V
2
CTipD DC input low voltage
VIL(DC)_CTipD
VSS
0.3 × VDD
V
1
CTipD AC input low voltage
VIL(AC)_CTipD
VSS
0.2 × VDD
V
5
tR_RESET
–
1
μs
3
RESET pulse width - after power-up
tPW_RESET_S
1
–
μs
RESET pulse width - during power-up
tPW_RESET_L
200
–
μs
Rising time
Notes:
1. After RESET_n is registered LOW, the RESET_n level must be maintained below VIL(DC)_REt
SET during PW_RESET, otherwise, the DRAM may not be reset.
2. After RESET_n is registered HIGH, the RESET_n level must be maintained above
VIH(DC)_RESET, otherwise, operation will be uncertain until it is reset by asserting RESET_n
signal LOW.
3. Slope reversal (ring-back) during this level transition from LOW to HIGH should be mitigated as much as possible.
4. Overshoot should not exceed the VIN values in the Absolute Maximum Ratings table.
5. Undershoot should not exceed the VIN values in the Absolute Maximum Ratings table.
6. CT Type-D inputs: RESET_n; same requirements as in normal mode.
Figure 219: CT Type-D Input Slew Rate Definition
tPW_RESET
VIH(AC)_RESETmin
VIH(DC)_RESETmin
VIL(DC)_RESETmax
VIL(AC)_RESETmax
tR_RESET
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Electrical Characteristics – AC and DC Differential Input Measurement Levels
Electrical Characteristics – AC and DC Differential Input Measurement
Levels
Differential Inputs
Figure 220: Differential AC Swing and “Time Exceeding AC-Level” tDVAC
tDVAC
VIH,diff(AC)min
VIH,diff,min
CK_t, CK_c
0.0
VIL,diff,max
VIL,diff(AC)max
tDVAC
Half cycle
Notes:
1. Differential signal rising edge from VIL,diff,max to VIH,diff(AC)min must be monotonic slope.
2. Differential signal falling edge from IH,diff,min to VIL,diff(AC)max must be monotonic slope.
Table 99: Differential Input Swing Requirements for CK_t, CK_c
DDR4-2400 /
2666
Parameter
Symbol
DDR4-1600 /
1866 / 2133
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Note
s
Differential input high
VIHdiff
150
Note 3
135
Note 3
125
Note 3
110
Note 3
mV
1
Differential input low
VILdiff
Note 3
–150
Note 3
-135
Note 3
-125
Note 3
-110
mV
1
Differential input high
(AC)
VIH-
2×
(VIH(AC)
- VREF)
Note 3
2×
(VIH(AC)
- VREF)
Note 3
2×
(VIH(AC)
- VREF)
Note 3
2×
(VIH(AC)
- VREF)
Note 3
V
2
diff(AC)
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DDR4-2933
DDR4-3200
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Electrical Characteristics – AC and DC Differential Input Measurement Levels
Table 99: Differential Input Swing Requirements for CK_t, CK_c (Continued)
Parameter
Differential input low
(AC)
Symbol
DDR4-1600 /
1866 / 2133
DDR4-2400 /
2666
Min
Min
VIL-
Note 3
diff(AC)
Notes:
Max
Max
DDR4-2933
Min
Max
DDR4-3200
Min
Max
Unit
Note
s
V
2
Note 3
2×
Note 3
2×
Note 3
2×
2×
(VIL(AC) (VIL(AC) (VIL(AC) (VIL(AC) VREF)
VREF)
VREF)
VREF)
1. Used to define a differential signal slew-rate.
2. For CK_t, CK_c use VIH(AC) and VIL(AC) of ADD/CMD and VREFCA.
3. These values are not defined; however, the differential signals (CK_t, CK_c) need to be
within the respective limits, VIH(DC)max and VIL(DC)min for single-ended signals as well as
the limitations for overshoot and undershoot.
Table 100: Minimum Time AC Time tDVAC for CK
tDVAC
Note:
(ps) at |VIH,diff(AC) to VIL,diff(AC)|
Slew Rate (V/ns)
200mV
TBDmV
>4.0
120
TBD
4.0
115
TBD
3.0
110
TBD
2.0
105
TBD
1.9
100
TBD
1.6
95
TBD
1.4
90
TBD
1.2
85
TBD
1.0
80
TBD
VDD/2 + 145mV
N/A
120mV
VDD/2 + 100mV ≤ VSEH ≤ VDD/2 + 145mV
N/A
(VSEH - VDD/2) - 25mV
VDD/2 - 145mV ≤ VSEL ≤ VDD/2 - 100mV
–(VDD/2 - VSEL) + 25mV
N/A
VSEL < VDD/2 - 145mV
–120mV
N/A
Table 104: Cross Point Voltage For CK Differential Input Signals at DDR4-2666 through DDR4-3200
DDR4-2666, 2933, 3200
Parameter
Differential input
cross point voltage relative to
VDD/2 for CK_t,
CK_c
Sym
Input Level
Min
Max
VIX(CK)
VSEH > VDD/2 + 145mV
N/A
110mV
VDD/2 + 90mV ≤ VSEH ≤ VDD/2 + 145mV
N/A
(VSEH - VDD/2) - 30mV
VDD/2 - 145mV ≤ VSEL ≤ VDD/2 - 90mV
–(VDD/2 - VSEL) + 30mV
N/A
VSEL < VDD/2 - 145mV
–110mV
N/A
DQS Differential Input Signal Definition and Swing Requirements
DQS_t, DQS_c: Differential Input Voltage
Figure 224: Differential Input Signal Definition for DQS_t, DQS_c
VIH,diff,peak
Half cycle
0.0V
Half cycle
VIL,diff,peak
Table 105: DDR4-1600 through DDR4-2400 Differential Input Swing Requirements for DQS_t, DQS_c
DDR4-1600, 1866,
2133
Parameter
Peak differential input high voltage
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DDR4-2400
Symbol
Min
Max
Min
Max
Unit
Notes
VIH,diff,peak
186
VDDQ
160
VDDQ
mV
1, 2
286
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Electrical Characteristics – AC and DC Differential Input Measurement Levels
Table 105: DDR4-1600 through DDR4-2400 Differential Input Swing Requirements for DQS_t, DQS_c
(Continued)
DDR4-1600, 1866,
2133
Parameter
Peak differential input low voltage
DDR4-2400
Symbol
Min
Max
Min
Max
Unit
Notes
VIL,diff,peak
VSSQ
–186
VSSQ
–160
mV
1, 2
1. Minimum and maximum limits are relative to single-ended portion and can be exceeded
within allowed overshoot and undershoot limits.
2. Minimum value point is used to determine differential signal slew-rate.
Notes:
Table 106: DDR4-2633 through DDR4-3200 Differential Input Swing Requirements for DQS_t, DQS_c
Parameter
DDR4-2666
DDR4-2933
DDR4-3200
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Peak differential input high voltage
VIH,diff,peak
150
VDDQ
145
VDDQ
140
VDDQ
mV
1, 2
Peak differential input low voltage
VIL,diff,peak
VSSQ
–150
VSSQ
–145
VSSQ
–140
mV
1, 2
1. Minimum and maximum limits are relative to single-ended portion and can be exceeded
within allowed overshoot and undershoot limits.
2. Minimum value point is used to determine differential signal slew-rate.
Notes:
The peak voltage of the DQS signals are calculated using the following equations:
VIH,dif,Peak voltage = MAX(ft)
VIL,dif,Peak voltage = MIN(ft)
(ft) = DQS_t, DQS_c.
The MAX(f(t)) or MIN(f(t)) used to determine the midpoint from which to reference the
±35% window of the exempt non-monotonic signaling shall be the smallest peak voltage observed in all UIs.
DQS_t, DQS_c: Single-Ended Input Voltages
Figure 225: DQS_t, DQS_c Input Peak Voltage Calculation and Range of Exempt non-Monotonic Signaling
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DQS_t
+35%
+50%
MIN(ft)
MAX(ft)
–35%
–50%
DQS_c
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Electrical Characteristics – AC and DC Differential Input Measurement Levels
DQS Differential Input Cross Point Voltage
To achieve tight RxMask input requirements as well as output skew parameters with respect to strobe, the cross point voltage of differential input signals (DQS_t, DQS_c) must
meet V IX_DQS,ratio in the table below. The differential input cross point voltage V IX_DQS
(VIX_DQS_FR and V IX_DQS_RF) is measured from the actual cross point of DQS_t, DQS_c
relative to the V DQS,mid of the DQS_t and DQS_c signals.
VDQS,mid is the midpoint of the minimum levels achieved by the transitioning DQS_t
and DQS_c signals, and noted by V DQS_trans. V DQS_trans is the difference between the lowest horizontal tangent above V DQS,mid of the transitioning DQS signals and the highest
horizontal tangent below V DQS,mid of the transitioning DQS signals. A non-monotonic
transitioning signal’s ledge is exempt or not used in determination of a horizontal tangent provided the said ledge occurs within ±35% of the midpoint of either V IH.DIFF.Peak
voltage (DQS_t rising) or V IL.DIFF.Peak voltage (DQS_c rising), as shown in the figure below.
A secondary horizontal tangent resulting from a ring-back transition is also exempt in
determination of a horizontal tangent. That is, a falling transition’s horizontal tangent is
derived from its negative slope to zero slope transition (point A in the figure below), and
a ring-back’s horizontal tangent is derived from its positive slope to zero slope transition (point B in the figure below) and is not a valid horizontal tangent; a rising transition’s horizontal tangent is derived from its positive slope to zero slope transition (point
C in the figure below), and a ring-back’s horizontal tangent derived from its negative
slope to zero slope transition (point D in the figure below) and is not a valid horizontal
tangent.
Figure 226: VIXDQS Definition
Lowest horizontal tanget above VDQS,mid
of the transitioning signals
VIX_DQS,FR
VIX_DQS,RF
VDQS,mid
VIX_DQS,FR
VIX_DQS,RF
B
VDQS_trans
D
VDQS_trans/2
DQS_t, DQS_c: Single-Ended Input Voltages
C
DQS_t
DQS_c
A
Highest horizontal tanget below VDQS,mid
of the transitioning signals
VSSQ
Table 107: Cross Point Voltage For Differential Input Signals DQS
DDR4-1600, 1866, 2133, 2400,
2666, 2933, 3200
Parameter
DQS_t and DQS_c crossing relative to the
midpoint of the DQS_t and DQS_c signal
swings
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Symbol
Min
Max
Unit
Notes
VIX_DQS,ratio
–
25
%
1, 2
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Electrical Characteristics – AC and DC Differential Input Measurement Levels
Table 107: Cross Point Voltage For Differential Input Signals DQS (Continued)
DDR4-1600, 1866, 2133, 2400,
2666, 2933, 3200
Parameter
VDQS,mid to Vcent(midpoint) offset
Symbol
Min
Max
Unit
Notes
VDQS,mid_to_Vcent
–
Note 3
mV
2
1. VIX_DQS,ratio is DQS VIX crossing (VIX_DQS,FR or VIX_DQS,RF) divided by VDQS_trans. VDQS_trans is
the difference between the lowest horizontal tangent above VDQS,midd of the transitioning DQS signals and the highest horizontal tangent below VDQS,mid of the transitioning
DQS signals.
2. VDQS,mid will be similar to the VREFDQ internal setting value (Vcent(midpoint) offset) obtained during VREF Training if the DQS and DQs drivers and paths are matched.
3. The maximum limit shall not exceed the smaller of VIH,diff,DQS minimum limit or 50mV.
Notes:
Slew Rate Definitions for DQS Differential Input Signals
Table 108: DQS Differential Input Slew Rate Definition
Measured
Description
From
To
Defined by
Differential input slew rate for rising edge
V IL,diff,DQS
V IH,diff,DQS
|VIH,diff,DQS - VIL,diff,DQS_ΔTRdiff
Differential input slew rate for falling edge
V IH,diff,DQS
V IL,diff,DQS
|VIHdiffDQS - VIL,diff,DQS_ΔTFdiff
1. The differential signal DQS_t, DQS_c must be monotonic between these thresholds.
Note:
DQS_t, DQS_c: Differential Input Voltage
Figure 227: Differential Input Slew Rate and Input Level Definition for DQS_t, DQS_c
VIH,diff,peak
VIH,diff,DQS
0.0V
VIL,diff,DQS
TRdiff
TFdiff
VIL,diff,peak
Table 109: DDR4-1600 through DDR4-2400 Differential Input Slew Rate and Input Levels for DQS_t,
DQS_c
DDR4-1600, 1866, 2133
Parameter
DDR4-2400
Symbol
Min
Max
Min
Max
Unit
Notes
Peak differential input high voltage
VIH,diff,peak
186
VDDQ
160
VDDQ
mV
1
Differential input high voltage
VIH,diff,DQS
136
–
130
–
mV
2, 3
Differential input low voltage
VIL,diff,DQS
–
–136
–
–130
mV
2, 3
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Electrical Characteristics – AC and DC Differential Input Measurement Levels
Table 109: DDR4-1600 through DDR4-2400 Differential Input Slew Rate and Input Levels for DQS_t,
DQS_c (Continued)
DDR4-1600, 1866, 2133
Parameter
Peak differential input low voltage
DQS differential input slew rate
Notes:
DDR4-2400
Symbol
Min
Max
Min
Max
Unit
Notes
VIL,diff,peak
-VDDQ
–186
-VDDQ
–160
mV
1
SRIdiff
3.0
18
3.0
18
V/ns
4, 5
1. Minimum and maximum limits are relative to single-ended portion and can be exceeded
within allowed overshoot and undershoot limits.
2. Differential signal rising edge from VIL,diff,DQS to VIH,diff,DQS must be monotonic slope.
3. Differential signal falling edge from VIH,diff,DQS to VIL,diff,DQS must be monotonic slope.
4. Differential input slew rate for rising edge from VIL,diff,DQS to VIH,diff,DQS is defined by |
VIL,diff,min - VIH,diff,max_ΔTRdiff.
5. Differential input slew rate for falling edge from VIH,diff,DQS to VIL,diff,DQS is defined by |
VIL,diff,min - VIH,diff,max_ΔTFdiff.
Table 110: DDR4-2666 through DDR4-3200 Differential Input Slew Rate and Input Levels for DQS_t,
DQS_c
DDR4-2666
Parameter
DDR4-2933
DDR4-3200
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Peak differential input
high voltage
VIH,diff,peak
150
VDDQ
145
VDDQ
140
VDDQ
mV
1
Differential input high
voltage
VIH,diff,DQS
130
–
115
–
110
–
mV
2, 3
Differential input low
voltage
VIL,diff,DQS
–
–130
–
–115
–
–110
mV
2, 3
Peak differential input
low voltage
VIL,diff,peak
VSSQ
–150
VSSQ
–145
VSSQ
–140
mV
1
DQS differential input
slew rate
SRIdiff
2.5
18
2.5
18
2.5
18
V/ns
4, 5
Notes:
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1. Minimum and maximum limits are relative to single-ended portion and can be exceeded
within allowed overshoot and undershoot limits.
2. Differential signal rising edge from VIL,diff,DQS to VIH,diff,DQS must be monotonic slope.
3. Differential signal falling edge from VIH,diff,DQS to VIL,diff,DQS must be monotonic slope.
4. Differential input slew rate for rising edge from VIL,diff,DQS to VIH,diff,DQS is defined by |
VIL,diff,min - VIH,diff,max_ΔTRdiff.
5. Differential input slew rate for falling edge from VIH,diff,DQS to VIL,diff,DQS is defined by |
VIL,diff,min - VIH,diff,max_ΔTFdiff.
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Electrical Characteristics – Overshoot and Undershoot Specifications
Electrical Characteristics – Overshoot and Undershoot Specifications
Address, Command, and Control Overshoot and Undershoot Specifications
Table 111: ADDR, CMD, CNTL Overshoot and Undershoot/Specifications
DDR41600
Description
DDR41866
DDR42133
DDR42400
DDR42666
DDR4- DDR42933 3200
Unit
Address and control pins (A[17:0], BG[1:0], BA[1:0], CS_n, RAS_n, CAS_n, WE_n, CKE, ODT, C2-0)
Area A: Maximum peak amplitude above VDD
absolute MAX
0.06
0.06
0.06
0.06
0.06
0.06
0.06
V
Area B: Amplitude allowed between VDD and
VDD absolute MAX
0.24
0.24
0.24
0.24
0.24
0.24
0.24
V
Area C: Maximum peak amplitude allowed for
undershoot below VSS
0.30
0.30
0.30
0.30
0.30
0.30
0.30
V
Area A maximum overshoot area per 1tCK
0.0083
0.0071
0.0062
0.0055
0.0055
0.0055
0.0055
V/ns
1tCK
0.2550
0.2185
0.1914
0.1699
0.1699
0.1699
0.1699
V/ns
0.2644
0.2265
0.1984
0.1762
0.1762
0.1762
0.1762
V/ns
Area B maximum overshoot area per
Area C maximum undershoot area per
1tCK
Figure 228: ADDR, CMD, CNTL Overshoot and Undershoot Definition
Absolute MAX overshoot
Volts (V)
VDD absolute MAX
VDD
A
Overshoot area above VDD absolute MAX
B
Overshoot area below VDD absolute MAX
and above VDD MAX
1tCK
VSS
C
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Undershoot area below VSS
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Electrical Characteristics – Overshoot and Undershoot Specifications
Clock Overshoot and Undershoot Specifications
Table 112: CK Overshoot and Undershoot/ Specifications
DDR41600
DDR41866
DDR42133
DDR42400
DDR42666
Area A: Maximum peak amplitude above VDD
absolute MAX
0.06
0.06
0.06
0.06
0.06
0.06
0.06
V
Area B: Amplitude allowed between VDD and
VDD absolute MAX
0.24
0.24
0.24
0.24
0.24
0.24
0.24
V
Area C: Maximum peak amplitude allowed for
undershoot below VSS
0.30
0.30
0.30
0.30
0.30
0.30
0.30
V
Area A maximum overshoot area per 1UI
0.0038
0.0032
0.0028
0.0025
0.0025
0.0025
0.0025
V/ns
Area B maximum overshoot area per 1UI
0.1125
0.0964
0.0844
0.0750
0.0750
0.0750
0.0750
V/ns
Area C maximum undershoot area per 1UI
0.1144
0.0980
0.0858
0.0762
0.0762
0.0762
0.0762
V/ns
Description
DDR4- DDR42933 3200
Unit
CLK_t, CLK_n
Figure 229: CK Overshoot and Undershoot Definition
Absolute MAX overshoot
Volts (V)
VDD absolute MAX
A
Overshoot area above VDD absolute MAX
B
Overshoot area below VDD absolute MAX
and above VDD MAX
VDD
1UI
VSS
C
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Electrical Characteristics – AC and DC Output Measurement
Levels
Data, Strobe, and Mask Overshoot and Undershoot Specifications
Table 113: Data, Strobe, and Mask Overshoot and Undershoot/ Specifications
DDR41600
Description
DDR41866
DDR42133
DDR42400
DDR42666
DDR4- DDR42933 3200
Unit
DQS_t, DQS_n, LDQS_t, LDQS_n, UDQS_t, UDQS_n, DQ[0:15], DM/DBI, UDM/UDBI, LDM/LDBI,
Area A: Maximum peak amplitude above VDDQ
absolute MAX
0.16
0.16
0.16
0.16
0.16
0.16
0.16
V
Area B: Amplitude allowed between VDDQ and
VDDQ absolute MAX
0.24
0.24
0.24
0.24
0.24
0.24
0.24
V
Area C: Maximum peak amplitude allowed for
undershoot below VSSQ
0.30
0.30
0.30
0.30
0.30
0.30
0.30
V
Area D: Maximum peak amplitude below VSSQ
absolute MIN
0.10
0.10
0.10
0.10
0.10
0.10
0.10
V
Area A maximum overshoot area per 1UI
0.0150
0.0129
0.0113
0.0100
0.0100
0.0100
0.0100
V/ns
Area B maximum overshoot area per 1UI
0.1050
0.0900
0.0788
0.0700
0.0700
0.0700
0.0700
V/ns
Area C maximum undershoot area per 1UI
0.1050
0.0900
0.0788
0.0700
0.0700
0.0700
0.0700
V/ns
Area D maximum undershoot area per 1UI
0.0150
0.0129
0.0113
0.0100
0.0100
0.0100
0.0100
V/ns
Figure 230: Data, Strobe, and Mask Overshoot and Undershoot Definition
Absolute MAX overshoot
Volts (V)
VDDQ absolute MAX
A
Overshoot area above VDDQ absolute MAX
B
Overshoot area below VDDQ absolute MAX
and above VDDQ MAX
VDDQ
1UI
VSSQ
C
VSSQ absolute MIN
Undershoot area below VSSQ MIN and
above VSSQ absolute MIN
D
Undershoot area below VSSQ absolute MIN
Absolute MAX undershoot
Electrical Characteristics – AC and DC Output Measurement Levels
Single-Ended Outputs
Table 114: Single-Ended Output Levels
Parameter
Symbol
DDR4-1600 to DDR4-3200
Unit
DC output high measurement level (for IV curve linearity)
VOH(DC)
1.1 × VDDQ
V
DC output mid measurement level (for IV curve linearity)
VOM(DC)
0.8 × VDDQ
V
DC output low measurement level (for IV curve linearity)
VOL(DC)
0.5 × VDDQ
V
AC output high measurement level (for output slew rate)
VOH(AC)
(0.7 + 0.15) × VDDQ
V
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Electrical Characteristics – AC and DC Output Measurement
Levels
Table 114: Single-Ended Output Levels (Continued)
Parameter
AC output low measurement level (for output slew rate)
Symbol
DDR4-1600 to DDR4-3200
Unit
VOL(AC)
(0.7 - 0.15) × VDDQ
V
1. The swing of ±0.15 × VDDQ is based on approximately 50% of the static single-ended
output peak-to-peak swing with a driver impedance of RZQ/7 and an effective test load
of 50Ω to VTT = VDDQ.
Note:
Using the same reference load used for timing measurements, output slew rate for falling and rising edges is defined and measured between V OL(AC) and V OH(AC) for singleended signals.
Table 115: Single-Ended Output Slew Rate Definition
Measured
Description
From
To
Defined by
Single-ended output slew rate for rising edge
VOL(AC)
VOH(AC)
[VOH(AC) - VOL(AC)@ΔTRse
Single-ended output slew rate for falling edge
VOH(AC)
VOL(AC)
[VOH(AC) - VOL(AC)@ΔTFse
Figure 231: Single-ended Output Slew Rate Definition
TRse
Single-Ended Output Voltage (DQ)
VOH(AC)
VOL(AC)
TFse
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Electrical Characteristics – AC and DC Output Measurement
Levels
Table 116: Single-Ended Output Slew Rate
For RON = RZQ/7
DDR4-1600/ 1866 / 2133 /
2400
Parameter
DDR4-2666
DDR4-2933 / 3200
Symbol
Min
Max
Min
Max
Min
Max
Unit
SRQse
4
9
4
9
4
9
V/ns
Single-ended output
slew rate
1. SR = slew rate; Q = query output; se = single-ended signals.
2. In two cases a maximum slew rate of 12V/ns applies for a single DQ signal within a byte
lane:
Notes:
• Case 1 is defined for a single DQ signal within a byte lane that is switching into a certain direction (either from HIGH-to-LOW or LOW-to-HIGH) while all remaining DQ signals in the same byte lane are static (they stay at either HIGH or LOW).
• Case 2 is defined for a single DQ signal within a byte lane that is switching into a certain direction (either from HIGH-to-LOW or LOW-to-HIGH) while all remaining DQ signals in the same byte lane are switching into the opposite direction (from LOW-toHIGH or HIGH-to-LOW, respectively). For the remaining DQ signal switching into the
opposite direction, the standard maximum limit of 9 V/ns applies.
Differential Outputs
Table 117: Differential Output Levels
Parameter
Symbol
DDR4-1600 to DDR4-3200
Unit
AC differential output high measurement level (for output slew
rate)
VOH,diff(AC)
0.3 × VDDQ
V
AC differential output low measurement level (for output slew
rate)
VOL,diff(AC)
–0.3 × VDDQ
V
Note:
1. The swing of ±0.3 × VDDQ is based on approximately 50% of the static single-ended output peak-to-peak swing with a driver impedance of RZQ/7 and an effective test load of
50Ω to VTT = VDDQ at each differential output.
Using the same reference load used for timing measurements, output slew rate for falling and rising edges is defined and measured between V OL,diff(AC) and V OH,diff(AC) for differential signals.
Table 118: Differential Output Slew Rate Definition
Measured
Description
From
To
Defined by
Differential output slew rate for rising edge
VOL,diff(AC)
VOH,diff(AC)
[VOH,diff(AC) - VOL,diff(AC)@ΔTRdiff
Differential output slew rate for falling edge
VOH,diff(AC)
VOL,diff(AC)
[VOH,diff(AC) - VOL,diff(AC)@ΔTFdiff
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Electrical Characteristics – AC and DC Output Measurement
Levels
Figure 232: Differential Output Slew Rate Definition
Differential Input Voltage (DQS_t, DQS_c)
TRdiff
VOH,diff(AC)
VOL,diff(AC)
TFdiff
Table 119: Differential Output Slew Rate
For RON = RZQ/7
DDR4-1600 / 1866 /
2133 / 2400
Parameter
Differential output slew
rate
Note:
DDR4-2666
DDR4-2933 / 3200
Symbol
Min
Max
Min
Max
Min
Max
Unit
SRQdiff
8
18
8
18
8
18
V/ns
1. SR = slew rate; Q = query output; diff = differential signals.
Reference Load for AC Timing and Output Slew Rate
The effective reference load of 50Ω to V TT = V DDQ and driver impedance of RZQ/7 for
each output was used in defining the relevant AC timing parameters of the device as
well as output slew rate measurements.
RON nominal of DQ, DQS_t and DQS_c drivers uses 34 ohms to specify the relevant AC
timing parameter values of the device. The maximum DC high level of output signal =
1.0 × V DDQ, the minimum DC low level of output signal = { 34 /( 34 + 50 ) } × V DDQ = 0.4 ×
VDDQ.
The nominal reference level of an output signal can be approximated by the following:
The center of maximum DC high and minimum DC low = { ( 1 + 0.4 ) / 2 } × V DDQ = 0.7 ×
VDDQ. The actual reference level of output signal might vary with driver R ON and reference load tolerances. Thus, the actual reference level or midpoint of an output signal is
at the widest part of the output signal’s eye.
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Electrical Characteristics – AC and DC Output Measurement
Levels
Figure 233: Reference Load For AC Timing and Output Slew Rate
VDDQ
VTT = VDDQ
DQ, DQS_t, DQS_c,
DM, TDQS_t, TDQS_c
CK_t, CK_c
DUT
RTT = 50ȍ
VSSQ
Timing reference point
Connectivity Test Mode Output Levels
Table 120: Connectivity Test Mode Output Levels
Parameter
Symbol
DDR4-1600 to DDR4-3200
Unit
DC output high measurement level (for IV curve linearity)
VOH(DC)
1.1 × VDDQ
V
DC output mid measurement level (for IV curve linearity)
VOM(DC)
0.8 × VDDQ
V
DC output low measurement level (for IV curve linearity)
VOL(DC)
0.5 × VDDQ
V
DC output below measurement level (for IV curve linearity)
VOB(DC)
0.2 × VDDQ
V
AC output high measurement level (for output slew rate)
VOH(AC)
VTT + (0.1 × VDDQ)
V
AC output low measurement level (for output slew rate)
VOL(AC)
VTT - (0.1 × VDDQ)
V
Note:
1. Driver impedance of RZQ/7 and an effective test load of 50Ω to VTT = VDDQ.
Figure 234: Connectivity Test Mode Reference Test Load
VDDQ
CT_Inputs
DUT
DQ, DQS_t, DQS_c,
LDQS_t, LDQS_c, UDQS_t, UDQS_c,
DM, LDM, HDM, TDQS_t, TDQS_c
0.5 × VDDQ
RTT = 50 ȍ
VSSQ
Timing reference point
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Electrical Characteristics – AC and DC Output Driver Characteristics
Figure 235: Connectivity Test Mode Output Slew Rate Definition
VOH(AC)
VTT
0.5 x VDD
VOL(AC)
TFoutput_CT
TRoutput_CT
Table 121: Connectivity Test Mode Output Slew Rate
DDR4-1600 / 1866 /
2133 / 2400
Parameter
DDR4-2666
DDR4-2933 /
3200
Symbol
Min
Max
Min
Max
Min
Max
Unit
Output signal falling time
TF_output_CT
–
10
–
10
–
10
ns/V
Output signal rising time
TR_output_CT
–
10
–
10
–
10
ns/V
Electrical Characteristics – AC and DC Output Driver Characteristics
Connectivity Test Mode Output Driver Electrical Characteristics
The DDR4 driver supports special values during connectivity test mode. These R ON values are referenced in this section. A functional representation of the output buffer is
shown in the figure below.
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Electrical Characteristics – AC and DC Output Driver Characteristics
Figure 236: Output Driver During Connectivity Test Mode
Chip in drive mode
Output driver
VDDQ
IPU_CT
To
other
circuitry
like
RCV,
...
RONPU_CT
DQ
RONPD_CT
IPD_CT
IOUT
VOUT
VSSQ
The output driver impedance, RON, is determined by the value of the external reference
resistor RZQ as follows: RON = RZQ/7. This targets 34Ω with nominal RZQ Ω; however,
connectivity test mode uses uncalibrated drivers and only a maximum target is defined.
Mismatch between pull up and pull down is undefined.
The individual pull-up and pull-down resistors (RONPu_CT and RONPd_CT) are defined as
follows:
RONPu_CT when RONPd_CT is off:
52138B&7
9''49287
,287
RONPD_CT when RONPU_CT is off:
5213'B&7
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,287
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Electrical Characteristics – AC and DC Output Driver Characteristics
Table 122: Output Driver Electrical Characteristics During Connectivity Test Mode
Assumes RZQ Ω; ZQ calibration not required
RON,nom_CT
Resistor
RONPD_CT
Ω
RONPU_CT
VOUT
Min
Nom
Max
Unit
VOB(DC) = 0.2 × VDDQ
N/A
N/A
1.9
RZQ/7
VOL(DC) = 0.5 × VDDQ
N/A
N/A
2.0
RZQ/7
VOM(DC) = 0.8 × VDDQ
N/A
N/A
2.2
RZQ/7
VOH(DC) = 1.1 × VDDQ
N/A
N/A
2.5
RZQ/7
VOB(DC) = 0.2 × VDDQ
N/A
N/A
1.9
RZQ/7
VOL(DC) = 0.5 × VDDQ
N/A
N/A
2.0
RZQ/7
VOM(DC) = 0.8 × VDDQ
N/A
N/A
2.2
RZQ/7
VOH(DC) = 1.1 × VDDQ
N/A
N/A
2.5
RZQ/7
Output Driver Electrical Characteristics
The DDR4 driver supports two RON values. These R ON values are referred to as strong
mode (low RON Ω) and weak mode (high RON Ω). A functional representation of
the output buffer is shown in the figure below.
Figure 237: Output Driver: Definition of Voltages and Currents
Chip in drive mode
Output driver
VDDQ
IPU
To
other
circuitry
like
RCV,
...
RONPU
DQ
IOUT
RONPD
VOUT
IPD
VSSQ
The output driver impedance, RON, is determined by the value of the external reference
resistor RZQ as follows: RON(34) = RZQ/7, or RON(48) = RZQ/5. This provides either a nominal 34.3Ω ±10% or 48Ω ±10% with nominal RZQ Ω
The individual pull-up and pull-down resistors (RONPu and RONPd) are defined as follows:
RONPu when RONPd is off:
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Electrical Characteristics – AC and DC Output Driver Characteristics
RONPU =
VDDQ - VOUT
IOUT
RONPD when RONPU is off:
RONPD =
VOUT
IOUT
Table 123: Strong Mode (34Ω
Ω) Output Driver Electrical Characteristics
Assumes RZQ Ω; Entire operating temperature range after proper ZQ calibration
RON,nom
Resistor
VOUT
Min
Nom
RON34PD
Ω
RON34PU
Max
Unit
Notes
VOL(DC) = 0.5 × VDDQ
0.73
1.00
1.10
RZQ/7
1, 2, 3
VOM(DC) = 0.8 × VDDQ
0.83
1.00
1.10
RZQ/7
1, 2, 3
VOH(DC) = 1.1 × VDDQ
0.83
1.00
1.25
RZQ/7
1, 2, 3
VOL(DC) = 0.5 × VDDQ
0.90
1.00
1.25
RZQ/7
1, 2, 3
VOM(DC) = 0.8 × VDDQ
0.90
1.00
1.10
RZQ/7
1, 2, 3
VOH(DC) = 1.1 × VDDQ
0.80
1.00
1.10
RZQ/7
1, 2, 3
Mismatch between pull-up and pulldown, MMPUPD
VOM(DC) = 0.8 × VDDQ
10
–
23
%
1, 2, 3, 4,
6, 7
Mismatch between DQ to DQ within
byte variation pull-up, MMPUdd
VOM(DC) = 0.8 × VDDQ
–
–
10
%
1, 2, 3, 4,
5
Mismatch between DQ to DQ within
byte variation pull-down, MMPDdd
VOM(DC) = 0.8 × VDDQ
-
–
10
%
1, 2, 3, 4,
6, 7
Notes:
1. The tolerance limits are specified after calibration with stable voltage and temperature.
For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following section on voltage and temperature sensitivity.
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ =
VSS.
3. Micron recommends calibrating pull-down and pull-up output driver impedances at 0.8
× VDDQ. Other calibration schemes may be used to achieve the linearity specification
shown above; for example, calibration at 0.5 × VDDQ and 1.1 VDDQ.
4. DQ-to-DQ mismatch within byte variation for a given component including DQS_t and
DQS_c (characterized).
5. Measurement definition for mismatch between pull-up and pull-down, MMPUPD:
Measure both RONPU and RONPD at 0.8 × VDDQ separately; RON,nom is the nominal RON value:
MMPUPD =
RONPU - RONPD
RON,nom
× 100
6. RON variance range ratio to RON nominal value in a given component, including DQS_t
and DQS_c:
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Electrical Characteristics – AC and DC Output Driver Characteristics
MMPUDD =
MMPDDD =
RONPU,max - RONPU,min
RON,nom
RONPD,max - RONPD,min
RON,nom
× 100
× 100
7. The lower and upper bytes of a x16 are each treated on a per byte basis.
8. The minimum values are derated by 9% when the device operates between –40°C and
0°C (TC).
Table 124: Weak Mode (48Ω
Ω) Output Driver Electrical Characteristics
Assumes RZQ Ω; Entire operating temperature range after proper ZQ calibration
RON,nom
Resistor
VOUT
Min
Nom
Ω
Max
Unit
Notes
VOL(DC) = 0.5 × VDDQ
0.73
1.00
1.10
RZQ/5
1, 2, 3
VOM(DC) = 0.8 × VDDQ
0.83
1.00
1.10
RZQ/5
1, 2, 3
VOH(DC) = 1.1 × VDDQ
0.83
1.00
1.25
RZQ/5
1, 2, 3
VOL(DC) = 0.5 × VDDQ
0.90
1.00
1.25
RZQ/5
1, 2, 3
VOM(DC) = 0.8 × VDDQ
0.90
1.00
1.10
RZQ/5
1, 2, 3
VOH(DC) = 1.1 × VDDQ
0.80
1.00
1.10
RZQ/5
1, 2, 3
Mismatch between pull-up and
pull-down, MMPUPD
VOM(DC) = 0.8 × VDDQ
10
–
23
%
1, 2, 3, 4,
6, 7
Mismatch between DQ to DQ
within byte variation pull-up,
MMPUdd
VOM(DC) = 0.8 × VDDQ
–
–
10
%
1, 2, 3, 4, 5
Mismatch between DQ to DQ
within byte variation pull-down,
MMPDdd
VOM(DC) = 0.8 × VDDQ
–
–
10
%
1, 2, 3, 4,
6, 7
RON48PD
RON48PU
Notes:
1. The tolerance limits are specified after calibration with stable voltage and temperature.
For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following section on voltage and temperature sensitivity.
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ =
VSS.
3. Micron recommends calibrating pull-down and pull-up output driver impedances at 0.8
× VDDQ. Other calibration schemes may be used to achieve the linearity specification
shown above; for example, calibration at 0.5 × VDDQ and 1.1 VDDQ.
4. DQ-to-DQ mismatch within byte variation for a given component including DQS_t and
DQS_c (characterized).
5. Measurement definition for mismatch between pull-up and pull-down, MMPUPD:
Measure both RONPU and RONPD at 0.8 × VDDQ separately; RON,nom is the nominal RON value:
MMPUPD =
RONPU - RONPD
× 100
RON,nom
6. RON variance range ratio to RON nominal value in a given component, including DQS_t
and DQS_c:
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Electrical Characteristics – AC and DC Output Driver Characteristics
MMPUDD =
MMPDDD =
RONPU,max - RONPU,min
RON,nom
RONPD,max - RONPD,min
RON,nom
× 100
× 100
7. The lower and upper bytes of a x16 are each treated on a per byte basis.
8. The minimum values are derated by 9% when the device operates between –40°C and
0°C (TC).
Output Driver Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to the equations and tables below.
ΔT = T - T(@calibration); ΔV = V DDQ - V DDQ(@ calibration); V DD = V DDQ
Table 125: Output Driver Sensitivity Definitions
Symbol
Min
Max
Unit
RONPU@ VOH(DC)
0.6 - dRONdTH × |ΔT| - dRONdVH × |ΔV|
1.1 _ dRONdTH × |ΔT| + dRONdVH × |ΔV|
RZQ/6
RON@ VOM(DC)
0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV|
1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV|
RZQ/6
RONPD@ VOL(DC)
0.6 - dRONdTL × |ΔT| - dRONdVL × |ΔV|
1.1 + dRONdTL × |ΔT| + dRONdVL × |ΔV|
RZQ/6
Table 126: Output Driver Voltage and Temperature Sensitivity
Voltage and Temperature Range
Symbol
Min
Max
Unit
dRONdTM
0
1.5
%/°C
dRONdVM
0
0.15
%/mV
dRONdTL
0
1.5
%/°C
dRONdVL
0
0.15
%/mV
dRONdTH
0
1.5
%/°C
dRONdVM
0
0.15
%/mV
Alert Driver
A functional representation of the alert output buffer is shown in the figure below. Output driver impedance, RON, is defined as follows.
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Electrical Characteristics – On-Die Termination Characteristics
Figure 238: Alert Driver
Alert driver
'5$0
Alert
RONPD
IOUT
IPD
VOUT
VSSQ
RONPD when RONPU is off:
VOUT
RONPD =
IOUT
Table 127: Alert Driver Voltage
RON,nom
Register
N/A
RONPD
Note:
VOUT
Min
Nom
Max
Unit
VOL(DC) = 0.1 × VDDQ
0.3
N/A
1.2
RZQ/7
VOM(DC) = 0.8 × VDDQ
0.4
N/A
1.2
RZQ/7
VOH(DC) = 1.1 × VDDQ
0.4
N/A
1.4
RZQ/7
1. VDDQ voltage is at VDDQ(DC).
Electrical Characteristics – On-Die Termination Characteristics
ODT Levels and I-V Characteristics
On-die termination (ODT) effective resistance settings are defined and can be selected
by any or all of the following options:
• MR1[10:8] (RTT(NOM)): Disable, 240 ohms, 120 ohms, 80 ohms, 60 ohms, 48 ohms, 40
ohms, and 34 ohms.
• MR2[11:9] (RTT(WR)): Disable, 240 ohms,120 ohms, and 80 ohms.
• MR5[8:6] (RTT(Park)): Disable, 240 ohms, 120 ohms, 80 ohms, 60 ohms, 48 ohms, 40
ohms, and 34 ohms.
ODT is applied to the following inputs:
• x4: DQ, DM_n, DQS_t, and DQS_c inputs.
• x8: DQ, DM_n, DQS_t, DQS_c, TDQS_t, and TDQS_c inputs.
• x16: DQ, LDM_n, UDM_n, LDQS_t, LDQS_c, UDQS_t, and UDQS_c inputs.
A functional representation of ODT is shown in the figure below.
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Electrical Characteristics – On-Die Termination Characteristics
Figure 239: ODT Definition of Voltages and Currents
Chip in termination mode
ODT
To other
circuitry
like RCV,
...
VDDQ
RTT
DQ
IOUT
VOUT
VSSQ
Table 128: ODT DC Characteristics
RTT
VOUT
Min
Nom
Max
Unit
Notes
240 ohm
VOL(DC) = 0.5 × VDDQ
0.9
1
1.25
RZQ
1, 2, 3
120 ohm
80 ohm
60 ohm
48 ohm
40 ohm
34 ohm
DQ-to-DQ mismatch
within byte
VOM(DC) = 0.8 × VDDQ
0.9
1
1.1
RZQ
1, 2, 3
VOH(DC) = 1.1 × VDDQ
0.8
1
1.1
RZQ
1, 2, 3
VOL(DC) = 0.5 × VDDQ
0.9
1
1.25
RZQ/2
1, 2, 3
VOM(DC) = 0.8 × VDDQ
0.9
1
1.1
RZQ/2
1, 2, 3
VOH(DC) = 1.1 × VDDQ
0.8
1
1.1
RZQ/2
1, 2, 3
VOL(DC) = 0.5 × VDDQ
0.9
1
1.25
RZQ/3
1, 2, 3
VOM(DC) = 0.8 × VDDQ
0.9
1
1.1
RZQ/3
1, 2, 3
VOH(DC) = 1.1 × VDDQ
0.8
1
1.1
RZQ/3
1, 2, 3
VOL(DC) = 0.5 × VDDQ
0.9
1
1.25
RZQ/4
1, 2, 3
VOM(DC) = 0.8 × VDDQ
0.9
1
1.1
RZQ/4
1, 2, 3
VOH(DC) = 1.1 × VDDQ
0.8
1
1.1
RZQ/4
1, 2, 3
VOL(DC) = 0.5 × VDDQ
0.9
1
1.25
RZQ/5
1, 2, 3
VOM(DC) = 0.8 × VDDQ
0.9
1
1.1
RZQ/5
1, 2, 3
VOH(DC) = 1.1 × VDDQ
0.8
1
1.1
RZQ/5
1, 2, 3
VOL(DC) = 0.5 × VDDQ
0.9
1
1.25
RZQ/6
1, 2, 3
VOM(DC) = 0.8 × VDDQ
0.9
1
1.1
RZQ/6
1, 2, 3
VOH(DC) = 1.1 × VDDQ
0.8
1
1.1
RZQ/6
1, 2, 3
VOL(DC) = 0.5 × VDDQ
0.9
1
1.25
RZQ/7
1, 2, 3
VOM(DC) = 0.8 × VDDQ
0.9
1
1.1
RZQ/7
1, 2, 3
VOH(DC) = 1.1 × VDDQ
0.8
1
1.1
RZQ/7
1, 2, 3
VOM(DC) = 0.8 × VDDQ
0
–
10
%
1, 2, 4, 5, 6
Notes:
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1. The tolerance limits are specified after calibration to 240 ohm ±1% resistor with stable
voltage and temperature. For the behavior of the tolerance limits if temperature or
voltage changes after calibration, see ODT Temperature and Voltage Sensitivity.
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Electrical Characteristics – On-Die Termination Characteristics
2. Micron recommends calibrating pull-up ODT resistors at 0.8 × VDDQ. Other calibration
schemes may be used to achieve the linearity specification shown here.
3. The tolerance limits are specified under the condition that VDDQ = VDD and VSSQ = VSS.
4. The DQ-to-DQ mismatch within byte variation for a given component including DQS_t
and DQS_c.
5. RTT variance range ratio to RTT nominal value in a given component, including DQS_t
and DQS_c.
DQ-to-DQ mismatch =
RTT(MAX) - RTT(MIN)
RTT(NOM)
× 100
6. DQ-to-DQ mismatch for a x16 device is treated as two separate bytes.
7. For IT, AT, and UT devices, the minimum values are derated by 9% when the device operates between –40°C and 0°C (TC).
ODT Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to the following equations and tables.
ΔT = T - T(@ calibration); ΔV = V DDQ - V DDQ(@ calibration); V DD = V DDQ
Table 129: ODT Sensitivity Definitions
Parameter
Min
Max
Unit
RTT@
0.9 - dRTTdT × |ΔT| - dRTTdV × |ΔV|
1.6 + dRTTdTH × |ΔT| + dRTTdVH × |ΔV|
RZQ/n
Table 130: ODT Voltage and Temperature Sensitivity
Parameter
Min
Max
Unit
dRTTdT
0
1.5
%/°C
dRTTdV
0
0.15
%/mV
ODT Timing Definitions
The reference load for ODT timings is different than the reference load used for timing
measurements.
Figure 240: ODT Timing Reference Load
VDDQ
DQ, DQS_t, DQS_c,
DM, TDQS_t, TDQS_c
CK_t, CK_c
DUT
VSSQ
RTT = 50ȍ
VTT = VSSQ
Timing reference point
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Electrical Characteristics – On-Die Termination Characteristics
ODT Timing Definitions
Definitions for tADC, tAONAS, and tAOFAS are provided in the Table 131 (page 307) and
shown in Figure 241 (page 308) and Figure 243 (page 309). Measurement reference settings are provided in the subsequent Table 132 (page 307).
The tADC for the dynamic ODT case and read disable ODT cases are represented by
tADC of Direct ODT Control case.
Table 131: ODT Timing Definitions
Parameter
tADC
Begin Point Definition
End Point Definition
Figure
Rising edge of CK_t, CK_c defined by the end point of
DODTLoff
Extrapolated point at VRTT,nom
Figure 241
(page 308)
Rising edge of CK_t, CK_c defined by the end point of
DODTLon
Extrapolated point at VSSQ
Figure 241
(page 308)
Rising edge of CK_t, CK_c defined by the end point of
ODTLcnw
Extrapolated point at VRTT,nom
Figure 242
(page 308)
Rising edge of CK_t, CK_c defined by the end point of
ODTLcwn4 or ODTLcwn8
Extrapolated point at VSSQ
Figure 242
(page 308)
tAONAS
Rising edge of CK_t, CK_c with ODT being first registered
HIGH
Extrapolated point at VSSQ
Figure 243
(page 309)
tAOFAS
Rising edge of CK_t, CK_c with ODT being first registered
LOW
Extrapolated point at VRTT,nom
Figure 243
(page 309)
Table 132: Reference Settings for ODT Timing Measurements
Measure
Parameter
RTT(Park)
RTT(NOM)
RTT(WR)
VSW1
VSW2
Note
tADC
Disable
RZQ Ω
–
0.20V
0.40V
1, 2, 4
–
RZQ Ω
High-Z
0.20V
0.40V
1, 3, 5
tAONAS
Disable
RZQ Ω
–
0.20V
0.40V
1, 2, 6
tAOFAS
Disable
RZQ Ω
–
0.20V
0.40V
1, 2, 6
Notes:
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1. MR settings are as follows: MR1 has A10 = 1, A9 = 1, A8 = 1 for RTT(NOM) setting; MR5 has
A8 = 0, A7 = 0, A6 = 0 for RTT(Park) setting; and MR2 has A11 = 0, A10 = 1, A9 = 1 for
RTT(WR) setting.
2. ODT state change is controlled by ODT pin.
3. ODT state change is controlled by a WRITE command.
4. Refer to Figure 241 (page 308).
5. Refer to Figure 242 (page 308).
6. Refer to Figure 243 (page 309).
307
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Electrical Characteristics – On-Die Termination Characteristics
Figure 241: tADC Definition with Direct ODT Control
DODTLoff
Begin point: Rising edge
of CK_t, CK_c defined
by the end point of
DODTLoff
DODTLon
Begin point: Rising edge
of CK_t, CK_c defined
by the end point of
DODTLon
CK_c
CK_t
tADC
VRTT,nom
tADC
End point: Extrapolated
point at VRTT,nom
VRTT,nom
Vsw2
DQ, DM
DQS_t, DQS_c
TDQS_t, TDQS_c
Vsw1
VSSQ
VSSQ
End point: Extrapolated
point at VSSQ
Figure 242: tADC Definition with Dynamic ODT Control
ODTLcnw
Begin point: Rising edge
of CK_t, CK_c defined
by the end point of
ODTLcnw
ODTLcnw4/8
Begin point: Rising edge
of CK_t, CK_c defined
by the end point of
ODTLcnw4 or ODTLcnw8
CK_c
CK_t
tADC
VRTT,nom
tADC
End point: Extrapolated
point at VRTT,nom
Vsw2
DQ, DM
DQS_t, DQS_c
TDQS_t, TDQS_c
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VRTT,nom
Vsw1
VSSQ
308
VSSQ
End point: Extrapolated
point at VSSQ
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8Gb: x8, x16 Automotive DDR4 SDRAM
Electrical Characteristics – On-Die Termination Characteristics
Figure 243: tAOFAS and tAONAS Definitions
Rising edge of CK_t, CK_c
with ODT being first
registered LOW
Rising edge of CK_t, CK_c
with ODT being first
registered HIGH
CK_c
CK_t
tAOFAS
VRTT,nom
tAONAS
End point: Extrapolated
point at VRTT_NOM
Vsw2
DQ, DM
DQS_t, DQS_c
TDQS_t, TDQS_c
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VRTT,nom
Vsw1
VSSQ
309
VSSQ
End point: Extrapolated
point at VSSQ
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8Gb: x8, x16 Automotive DDR4 SDRAM
DRAM Package Electrical Specifications
DRAM Package Electrical Specifications
Table 133: DRAM Package Electrical Specifications for x4 and x8 Devices
1600/1866/2133/
2400/2666
Parameter
Input/
output
DQS_t,
DQS_c
Input CTRL
pins
Input CMD
ADD pins
CK_t, CK_c
2933
3200
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
ZIO
45
85
48
85
48
85
ohm
1, 2, 4
TdIO
14
42
14
40
14
40
ps
1, 3, 4
Lpkg
LIO
–
3.3
–
3.3
–
3.3
nH
10
Cpkg
CIO
–
0.78
–
0.78
–
0.78
pF
11
Zpkg
Package delay
ZIO DQS
45
85
48
85
48
85
ohm
1, 2
Package delay
TdIO DQS
14
42
14
40
14
40
ps
1, 3
Delta Zpkg
DZIO DQS
–
10
–
10
–
10
ohm
1, 2, 6
Delta delay
DTdIO DQS
–
5
–
5
–
5
ps
1, 3, 6
Zpkg
Lpkg
LIO DQS
–
3.3
–
3.3
–
3.3
nH
10
Cpkg
CIO DQS
–
0.78
–
0.78
–
0.78
pF
11
Zpkg
ZI CTRL
50
90
50
90
50
90
ohm
1, 2, 8
TdI CTRL
14
42
14
40
14
40
ps
1, 3, 8
Package delay
Lpkg
LI CTRL
–
3.4
–
3.4
–
3.4
nH
10
Cpkg
CI CTRL
–
0.7
–
0.7
–
0.7
pF
11
Zpkg
ZI ADD CMD
50
90
50
90
50
90
ohm
1, 2, 7
TdI ADD CMD
14
45
14
40
14
40
ps
1, 3, 7
Package delay
Lpkg
LI ADD CMD
–
3.6
–
3.6
–
3.6
nH
10
Cpkg
CI ADD CMD
–
0.74
–
0.74
–
0.74
pF
11
Zpkg
ZCK
50
90
50
90
50
90
ohm
1, 2
TdCK
14
42
14
42
14
42
ps
1, 3
Delta Zpkg
DZDCK
–
10
–
10
–
10
ohm
1, 2, 5
Delta delay
DTdDCK
–
5
–
5
–
5
ps
1, 3, 5
Lpkg
LI CLK
–
3.4
–
3.4
–
3.4
nH
10
Cpkg
CI CLK
–
0.7
–
0.7
–
0.7
pF
11
Package delay
ZQ Zpkg
ZO ZQ
–
100
–
100
–
100
ohm
1, 2
ZQ delay
TdO ZQ
20
90
20
90
20
90
ps
1, 3
ALERT Zpkg
ZO ALERT
40
100
40
100
40
100
ohm
1, 2
ALERT delay
TdO ALERT
20
55
20
55
20
55
ps
1, 3
Notes:
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8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1. This parameter is not subject to a production test; it is verified by design and characterization and are provided for reference; system signal simulations should not use these
values but use the Micron package model. The package parasitic (L and C) are validated
using package only samples. The capacitance is measured with VDD, VDDQ, VSS, and VSSQ
shorted with all other signal pins floating. The inductance is measured with VDD, VDDQ,
VSS, and VSSQ shorted and all other signal pins shorted at the die, not pin, side.
2. Package-only impedance (Zpkg) is calculated based on the Lpkg and Cpkg total for a
given pin where: Zpkg (total per pin) = SQRT (Lpkg/Cpkg).
310
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8Gb: x8, x16 Automotive DDR4 SDRAM
DRAM Package Electrical Specifications
3. Package-only delay (Tpkg) is calculated based on Lpkg and Cpkg total for a given pin
where: Tdpkg (total per pin) = SQRT (Lpkg × Cpkg).
4. ZIO and TdIO apply to DQ, DM, TDQS_t and TDQS_c.
5. Absolute value of ZCK_t, ZCK_c for impedance (Z) or absolute value of TdCK_t, TdCK_c
for delay (Td).
6. Absolute value of ZIO (DQS_t), ZIO (DQS_c) for impedance (Z) or absolute value of TdIO
(DQS_t), TdIO (DQS_c) for delay (Td).
7. ZI ADD CMD and TdI ADD CMD apply to A[17:0], BA[1:0], BG[1:0], RAS_n CAS_n, WE_n,
ACT_n, and PAR.
8. ZI CTRL and TdI CTRL apply to ODT, CS_n, and CKE.
9. Package implementations will meet specification if the Zpkg and package delay fall
within the ranges shown, and the maximum Lpkg and Cpkg do not exceed the maximum values shown.
10. It is assumed that Lpkg can be approximated as Lpkg = ZO × Td.
11. It is assumed that Cpkg can be approximated as Cpkg = Td/ZO.
Table 134: DRAM Package Electrical Specifications for x16 Devices
1600/1866/2133/
2400/2666
Parameter
Input/
output
LDQS_t/
LDQS_c/
UDQS_t/
UDQS_c
LDQS_t/
LDQS_c,
UDQS_t/
UDQS_c,
Input CTRL
pins
Input CMD
ADD pins
CK_t, CK_c
Zpkg
2933
3200
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
ZIO
45
85
45
85
45
85
ohm
1, 2, 4
TdIO
14
45
14
45
14
45
ps
1, 3, 4
Lpkg
LIO
–
3.4
–
3.4
–
3.4
nH
11
Cpkg
CIO
–
0.82
–
0.82
–
0.82
pF
11
Zpkg
ZIO DQS
45
85
45
85
45
85
ohm
1, 2
Package delay
TdIO DQS
14
45
14
45
14
45
ps
1, 3
Lpkg
LIO DQS
–
3.4
–
3.4
–
3.4
nH
11
Cpkg
CIO DQS
–
0.82
–
0.82
–
0.82
pF
11
Delta Zpkg
DZIO DQS
–
10.5
–
10.5
–
10.5
ohm
1, 2, 6
Delta delay
DTdIO DQS
–
5
–
5
–
5
ps
1, 3, 6
Package delay
Zpkg
ZI CTRL
50
90
50
90
50
90
ohm
1, 2, 8
TdI CTRL
14
42
14
42
14
42
ps
1, 3, 8
Lpkg
LI CTRL
–
3.4
–
3.4
–
3.4
nH
11
Cpkg
CI CTRL
–
0.7
–
0.7
–
0.7
pF
11
Package delay
ZI ADD CMD
50
90
50
90
50
90
ohm
1, 2, 7
TdI ADD CMD
14
52
14
52
14
52
ps
1, 3, 7
Lpkg
LI ADD CMD
–
3.9
–
3.9
–
3.9
nH
11
Cpkg
CI ADD CMD
–
0.86
–
0.86
–
0.86
pF
11
Zpkg
Package delay
ZCK
50
90
50
90
50
90
ohm
1, 2
TdCK
14
42
14
42
14
42
ps
1, 3
Delta Zpkg
DZDCK
–
10.5
–
10.5
–
10.5
ohm
1, 2, 5
Delta delay
DTdDCK
–
5
–
5
–
5
ps
1, 3, 5
Zpkg
Package delay
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8Gb: x8, x16 Automotive DDR4 SDRAM
DRAM Package Electrical Specifications
Table 134: DRAM Package Electrical Specifications for x16 Devices (Continued)
1600/1866/2133/
2400/2666
Parameter
Input CLK
2933
3200
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Lpkg
LI CLK
–
3.4
–
3.4
–
3.4
nH
11
Cpkg
CI CLK
–
0.7
–
0.7
–
0.7
pF
11
ZQ Zpkg
ZO ZQ
–
100
–
100
–
100
ohm
1, 2
ZQ delay
TdO ZQ
20
90
20
90
20
90
ps
1, 3
ALERT Zpkg
ZO ALERT
40
100
40
100
40
100
ohm
1, 2
ALERT delay
TdO ALERT
20
55
20
55
20
55
ps
1, 3
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1. This parameter is not subject to a production test; it is verified by design and characterization and are provided for reference; system signal simulations should not use these
values but use the Micron package model. The package parasitic (L and C) are validated
using package only samples. The capacitance is measured with VDD, VDDQ, VSS, and VSSQ
shorted with all other signal pins floating. The inductance is measured with VDD, VDDQ,
VSS, and VSSQ shorted and all other signal pins shorted at the die, not pin, side.
2. Package-only impedance (Zpkg) is calculated based on the Lpkg and Cpkg total for a
given pin where: Zpkg (total per pin) = SQRT (Lpkg/Cpkg).
3. Package-only delay (Tpkg) is calculated based on Lpkg and Cpkg total for a given pin
where: Tdpkg (total per pin) = SQRT (Lpkg × Cpkg).
4. ZIO and TdIO apply to DQ, DM, TDQS_t and TDQS_c.
5. Absolute value of ZCK_t, ZCK_c for impedance (Z) or absolute value of TdCK_t, TdCK_c
for delay (Td).
6. Absolute value of ZIO (DQS_t), ZIO (DQS_c) for impedance (Z) or absolute value of TdIO
(DQS_t), TdIO (DQS_c) for delay (Td).
7. ZI ADD CMD and TdI ADD CMD apply to A[17:0], BA[1:0], BG[1:0], RAS_n CAS_n, WE_n,
ACT_n, and PAR.
8. ZI CTRL and TdI CTRL apply to ODT, CS_n, and CKE.
9. Package implementations will meet specification if the Zpkg and package delay fall
within the ranges shown, and the maximum Lpkg and Cpkg do not exceed the maximum values shown.
10. It is assumed that Lpkg can be approximated as Lpkg = ZO × Td.
11. It is assumed that Cpkg can be approximated as Cpkg = Td/ZO.
312
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8Gb: x8, x16 Automotive DDR4 SDRAM
DRAM Package Electrical Specifications
Table 135: Pad Input/Output Capacitance
DDR4-1600,
1866, 2133
DDR4-2400,
2666
DDR4-2933
DDR4-3200
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Input/output capacitance:
DQ, DM, DQS_t, DQS_c,
TDQS_t, TDQS_c
CIO
0.55
1.4
0.55
1.15
0.55
1.00
0.55
1.00
pF
1, 2, 3
Input capacitance: CK_t and
CK_c
CCK
0.2
0.8
0.2
0.7
0.2
0.7
0.15
0.7
pF
2, 3
Input capacitance delta: CK_t
and CK_c
CDCK
-
0.05
-
0.05
-
0.05
-
0.05
pF
2, 3, 6
Input/output capacitance delta: DQS_t and DQS_c
CDDQS
-
0.05
-
0.05
-
0.05
-
0.05
pF
2, 3, 5
Input capacitance: CTRL,
ADD, CMD input-only pins
CI
0.2
0.8
0.2
0.7
0.2
0.6
0.15
0.55
pF
2, 3, 4
Input capacitance delta: All
CTRL input-only pins
CDI_CTRL
–0.1
0.1
–0.1
0.1
–0.1
0.1
–0.1
0.1
pF
2, 3, 8,
9
Input capacitance delta: All
ADD/CMD input-only pins
CDI_ADD_CM
–0.1
0.1
–0.1
0.1
–0.1
0.1
–0.1
0.1
pF
1, 2, 10,
11
CDIO
–0.1
0.1
–0.1
0.1
–0.1
0.1
–0.1
0.1
pF
1, 2, 3,
4
CALERT
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
pF
2, 3
Input/output capacitance: ZQ
pin
CZQ
–
2.3
–
2.3
–
2.3
–
2.3
pF
2, 3, 12
Input/output capacitance:
TEN pin
CTEN
0.2
2.3
0.2
2.3
0.2
2.3
0.15
2.3
pF
2, 3, 13
Parameter
Input/output capacitance delta: DQ, DM, DQS_t, DQS_c,
TDQS_t, TDQS_c
Input/output capacitance:
ALERT pin
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
D
1. Although the DM, TDQS_t, and TDQS_c pins have different functions, the loading
matches DQ and DQS.
2. This parameter is not subject to a production test; it is verified by design and characterization and are provided for reference; system signal simulations should not use these
values but use the Micron package model. The capacitance, if and when, is measured according to the JEP147 specification, “Procedure for Measuring Input Capacitance Using
a Vector Network Analyzer (VNA),” with VDD, VDDQ, VSS, and VSSQ applied and all other
pins floating (except the pin under test, CKE, RESET_n and ODT, as necessary). VDD =
VDDQ = 1.2V, VBIAS = VDD/2 and on-die termination off. Measured data is rounded using
industry standard half-rounded up methodology to the nearest hundredth of the MSB.
3. This parameter applies to monolithic die, obtained by de-embedding the package L and
C parasitics.
4. CDIO = CIO(DQ, DM) - 0.5 × (CIO(DQS_t) + CIO(DQS_c)).
5. Absolute value of CIO (DQS_t), CIO (DQS_c)
6. Absolute value of CCK_t, CCK_c
7. CI applies to ODT, CS_n, CKE, A[17:0], BA[1:0], BG[1:0], RAS_n, CAS_n, ACT_n, PAR and
WE_n.
8. CDI_CTRL applies to ODT, CS_n, and CKE.
313
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8Gb: x8, x16 Automotive DDR4 SDRAM
Thermal Characteristics
9.
10.
11.
12.
13.
CDI_CTRL = CI(CTRL) - 0.5 × (CI(CLK_t) + CI(CLK_c)).
CDI_ADD_CMD applies to A[17:0], BA1:0], BG[1:0], RAS_n, CAS_n, ACT_n, PAR and WE_n.
CDI_ADD_CMD = CI(ADD_CMD) - 0.5 × (CI(CLK_t) + CI(CLK_c)).
Maximum external load capacitance on ZQ pin: 5pF.
Only applicable if TEN pin does not have an internal pull-up.
Thermal Characteristics
Table 136: Thermal Characteristics
Value
Units
Symbol
Notes
Operating case temperature:
Commercial
0 to +85
°C
TC
1, 2, 3
0 to +95
°C
TC
1, 2, 3, 4
Operating case temperature:
Industrial
–40 to +95
°C
TC
1, 2, 3, 4
Operating case temperature:
Automotive
–40 to
+105
°C
TC
1, 2, 3, 4
Operating case temperature:
Ultra-high
–40 to
+125
°C
TC
1, 2, 3, 4
ΘJC
5
Parameter/Condition
78-ball “WE”
Junction-to-case (TOP)
3.5
Junction-to-board
21
Junction-to-case (TOP)
4.1
Junction-to-board
16.2
78-ball “SA”,
"AG"
Junction-to-case (TOP)
4.9
Junction-to-board
14.2
96-ball “LY”,
"AD"
Junction-to-case (TOP)
4.8
Junction-to-board
15.2
Junction-to-case (TOP)
4.9
Junction-to-board
14.2
Junction-to-case (TOP)
TBD
Junction-to-board
TBD
Rev B
96-ball “JY”
Rev E
78-ball "AG"
Rev R
96-ball “TD"
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
ΘJB
ΘJC
5
ΘJB
ΘJC
5
ΘJB
ΘJC
5
ΘJB
ΘJC
5
ΘJB
ΘJC
5
ΘJB
1. MAX operating case temperature. TC is measured in the center of the package.
2. A thermal solution must be designed to ensure the DRAM device does not exceed the
maximum TC during operation.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC during operation.
4. If TC exceeds 85°C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9μs
interval refresh rate.
5. The thermal resistance data is based off of a number of samples from multiple lots and
should be viewed as a typical number.
314
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Measurement Conditions
Figure 244: Thermal Measurement Point
TC test point
(L/2)
L
(W/2)
W
Current Specifications – Measurement Conditions
IDD, IPP, and IDDQ Measurement Conditions
IDD, IPP, and IDDQ measurement conditions, such as test load and patterns, are defined
in this section.
• IDD currents (IDD0, IDD1, IDD2N, IDD2NT, IDD2P, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, IDD5R,
IDD6N, IDD6E, IDD6R, IDD6A, IDD7, DD8 and IDD9) are measured as time-averaged currents
with all V DD balls of the device under test grouped together.
• IPP currents are IPP3N for standby cases (IDD2N, IDD2NT, IDD2P, IDD2Q, IDD3N, IDD3P, IDD8),
IPP0 for active cases (IDD0,IDD1, IDD4R, IDD4W), IPP5R for the distributed refresh case
(IDD5R), IPP6x for self refresh cases (IDD6N, IDD6E, IDD6R, IDD6A), IPP7 for the operating
bank interleave read case (IDD7) and IPP9 for the MBIST-PPR operation case. These
have the same definitions as the IDD currents referenced but are measured on the V PP
supply.
• IDDQ currents are measured as time-averaged currents with V DDQ balls of the device
under test grouped together. Micron does not specify IDDQ currents.
• IPP and IDDQ currents are not included in IDD currents, IDD and IDDQ currents are not
included in IPP currents, and IDD and IPP currents are not included in IDDQ currents.
Note: IDDQ values cannot be directly used to calculate the I/O power of the device. They
can be used to support correlation of simulated I/O power to actual I/O power. In
DRAM module application, IDDQ cannot be measured separately because V DD and V DDQ
are using a merged-power layer in the module PCB.
The following definitions apply for IDD, IPP and IDDQ measurements.
•
•
•
•
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
“0” and “LOW” are defined as V IN ≤VIL(AC)max
“1” and “HIGH” are defined as V IN ≥VIH(AC)min
“Midlevel” is defined as inputs V REF = V DD/2
Timings used for IDD, IPP and IDDQ measurement-loop patterns are provided in the
Current Test Definition and Patterns section.
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Measurement Conditions
• Basic IDD, IPP, and IDDQ measurement conditions are described in the Current Test
Definition and Patterns section.
• Detailed IDD, IPP, and IDDQ measurement-loop patterns are described in the Current
Test Definition and Patterns section.
• Current measurements are done after properly initializing the device. This includes,
but is not limited to, setting:
RON = RZQ/7 (34 ohm in MR1);
Qoff = 0B (output buffer enabled in MR1);
RTT(NOM) = RZQ/6 (40 ohm in MR1);
RTT(WR) = RZQ/2 (120 ohm in MR2);
RTT(Park) = disabled;
TDQS feature disabled in MR1; CRC disabled in MR2; CA parity feature disabled in
MR3; Gear-down mode disabled in MR3; Read/Write DBI disabled in MR5; DM disabled in MR5
• Define D = {CS_n, RAS_n, CAS_n, WE_n}: = {HIGH, LOW, LOW, LOW}; apply BG/BA
changes when directed.
• Define D_n = {CS_n, RAS_n, CAS_n, WE_n}: = {HIGH, HIGH, HIGH, HIGH}; apply invert of BG/BA changes when directed above.
Note: The measurement-loop patterns must be executed at least once before actual current measurements can be taken, with the exception of IDD9 which may be measured
any time after MBIST-PPR entry.
Figure 245: Measurement Setup and Test Load for IDDx, IPPx, and IDDQx
IDD
VDD
RESET_n
CK_t/CK_c
IPP
IDDQ
VPP
VDDQ
DDR4
SDRAM
CKE
CS_n
C
ACT_n, RAS_n, CAS_n, WE_n
A, BG, BA
ODT
ZQ
V
DQ
DM_n
VSSQ
SS
CCMTD-1406124318-10419
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DQS_t, DQS_c
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Measurement Conditions
Figure 246: Correlation: Simulated Channel I/O Power to Actual Channel I/O Power
Applic ation-s pe c ific
memory c ha nne l
env ironmen t
C hanne l I/O
pow er simulation
I DD Q
tes t loa d
I DD Q
simulation
IDD Q
meas ure ment
C or relation
C orre c tion
C hanne l I/O
pow er n umber
Note:
1. Supported by IDDQ measurement.
IDD Definitions
Table 137: Basic IDD, IPP, and IDDQ Measurement Conditions
Symbol
Description
IDD0
Operating One Bank Active-Precharge Current (AL = 0)
CKE: HIGH; External clock: On; tCK, nRC, nRAS, CL: see the previous table; BL: 8;1 AL: 0; CS_n: HIGH between
ACT and PRE; Command, address, bank group address, bank address inputs: partially toggling according to the
next table; Data I/O: VDDQ; DM_n: stable at 0; Bank activity: cycling with one bank active at a time: 0, 0, 1, 1, 2,
2, ... (see the IDD0 Measurement-Loop Pattern table); Output buffer and RTT: enabled in mode registers;2 ODT
signal: stable at 0; Pattern details: see the IDD0 Measurement-Loop Pattern table
IPP0
Operating One Bank Active-Precharge IPP Current (AL = 0)
Same conditions as IDD0 above
IDD1
Operating One Bank Active-Read-Precharge Current (AL = 0)
CKE: HIGH; External clock: on; tCK, nRC, nRAS, nRCD, CL: see the previous table; BL: 8;1, 5 AL: 0; CS_n: HIGH
between ACT, RD, and PRE; Command, address, bank group address, bank address inputs, Data I/O: partially
toggling according to the IDD1 Measurement-Loop Pattern table; DM_n: stable at 0; Bank activity: cycling with
one bank active at a time: 0, 0, 1, 1, 2, 2, ... (see the following table); Output buffer and RTT: enabled in mode
registers;2 ODT Signal: stable at 0; Pattern details: see the IDD1 Measurement-Loop Pattern table
IDD2N
Precharge Standby Current (AL = 0)
CKE: HIGH; External clock: On; tCK, CL: see the previous table; BL: 8;1 AL: 0; CS_n: stable at 1; Command, address, bank group address, bank address Inputs: partially toggling according to the IDD2N and IDD3N Measurement-Loop Pattern table; Data I/O: VDDQ; DM_n: stable at 1; Bank activity: all banks closed; Output buffer and
RTT: enabled in mode registers;2 ODT signal: stable at 0; Pattern details: see the IDD2N and IDD3N MeasurementLoop Pattern table
CCMTD-1406124318-10419
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Measurement Conditions
Table 137: Basic IDD, IPP, and IDDQ Measurement Conditions (Continued)
Symbol
Description
IDD2NT
Precharge Standby ODT Current
CKE: HIGH; External clock: on; tCK, CL: see the previous table; BL: 8;1 AL: 0; CS_n: stable at 1; Command, address, bank gropup address, bank address inputs: partially toggling according to the IDD2NT Measurement-Loop
Pattern table; Data I/O: VSSQ; DM_n: stable at 1; Bank activity: all banks closed; Output buffer and RTT: enabled
in mode registers;2 ODT signal: toggling according to the IDD2NT Measurement-Loop Pattern table; Pattern details: see the IDD2NT Measurement-Loop Pattern table
IDD2P
Precharge Power-Down Current
CKE: LOW; External clock: on; tCK, CL: see the previous table; BL: 8;1 AL: 0; CS_n: stable at 1; Command, address, bank group address, bank address inputs: stable at 0; Data I/O: VDDQ; DM_n: stable at 1; Bank activity: all
banks closed; Output buffer and RTT: Enabled in mode registers;2 ODT signal: stable at 0
IDD2Q
Precharge Quiet Standby Current
CKE: HIGH; External clock: on; tCK, CL: see the previous table; BL: 8;1 AL: 0; CS_n: stable at 1; Command, address, bank group address, bank address inputs: stable at 0; Data I/O: VDDQ; DM_n: stable at 1; Bank activity: all
banks closed; Output buffer and RTT: Enabled in mode registers;2 ODT signal: stable at 0
IDD3N
Active Standby Current (AL = 0)
CKE: HIGH; External clock: on; tCK, CL: see the previous table; BL: 8;1 AL: 0; CS_n: stable at 1; Command, address, bank group address, bank address inputs: partially toggling according to the IDD2N and IDD3N Measurement-Loop Pattern table; Data I/O: VDDQ; DM_n: stable at 1; Bank activity: all banks open; Output buffer and
RTT: Enabled in mode registers;2 ODT signal: stable at 0; Pattern details: see the IDD2N and IDD3N MeasurementLoop Pattern table
IPP3N
Active Standby IPP3N Current (AL = 0)
Same conditions as IDD3N above
IDD3P
Active Power-Down Current (AL = 0)
CKE: LOW; External clock: on; tCK, CL: see the previous table; BL: 8;1 AL: 0; CS_n: stable at 1; Command, address, bank group address, bank address inputs: stable at 1; Data I/O: VDDQ; DM_n: stable at 1; Bank activity: all
banks open; Output buffer and RTT: Enabled in mode registers;2 ODT signal: stable at 0
IDD4R
Operating Burst Read Current (AL = 0)
CKE: HIGH; External clock: on; tCK, CL: see the previous table; BL: 8;15 AL: 0; CS_n: HIGH between RD; Command, address, bank group address, bank address inputs: partially toggling according to the IDD4R Measurement-Loop Pattern table; Data I/O: seamless read data burst with different data between one burst and the
next one according to the IDD4R Measurement-Loop Pattern table; DM_n: stable at 1; Bank activity: all banks
open, RD commands cycling through banks: 0, 0, 1, 1, 2, 2, ... (see the IDD4R Measurement-Loop Pattern table);
Output buffer and RTT: Enabled in mode registers;2 ODT signal: stable at 0; Pattern details: see the IDD4R Measurement-Loop Pattern table
IDD4W
Operating Burst Write Current (AL = 0)
CKE: HIGH; External clock: on; tCK, CL: see the previous table; BL: 8;1 AL: 0; CS_n: HIGH between WR; Command, address, bank group address, bank address inputs: partially toggling according to the IDD4W Measurement-Loop Pattern table; Data I/O: seamless write data burst with different data between one burst and the
next one according to the IDD4W Measurement-Loop Pattern table; DM: stable at 0; Bank activity: all banks
open, WR commands cycling through banks: 0, 0, 1, 1, 2, 2, ... (see IDD4W Measurement-Loop Pattern table);
Output buffer and RTT: enabled in mode registers (see note2); ODT signal: stable at HIGH; Pattern details: see
the IDD4W Measurement-Loop Pattern table
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Measurement Conditions
Table 137: Basic IDD, IPP, and IDDQ Measurement Conditions (Continued)
Symbol
Description
IDD5R
Distributed Refresh Current (1X REF)
CKE: HIGH; External clock: on; tCK, CL, nREFI: see the previous table; BL: 8;1 AL: 0; CS_n: HIGH between REF;
Command, address, bank group address, bank address inputs: partially toggling according to the IDD5R Measurement-Loop Pattern table; Data I/O: VDDQ; DM_n: stable at 1; Bank activity: REF command every nREFI (see
the IDD5R Measurement-Loop Pattern table); Output buffer and RTT: enabled in mode registers2; ODT signal:
stable at 0; Pattern details: see the IDD5R Measurement-Loop Pattern table
IPP5R
Distributed Refresh Current (1X REF)
Same conditions as IDD5R above
IDD6N
Self Refresh Current: Normal Temperature Range
TC: 0–85°C; Auto self refresh (ASR): disabled;3 Self refresh temperature range (SRT): normal;4 CKE: LOW; External clock: off; CK_t and CK_c: LOW; CL: see the table above; BL: 8;1 AL: 0; CS_n, command, address, bank group
address, bank address, data I/O: VDDQ; DM_n: stable at 1; Bank activity: SELF REFRESH operation; Output buffer
and RTT: enabled in mode registers;2 ODT signal: midlevel
IDD6E
Self Refresh Current: Extended Temperature Range 4
TC: 0–95°C; Auto self refresh (ASR): disabled4; Self refresh temperature range (SRT): extended;4 CKE: LOW; External clock: off; CK_t and CK_c: LOW; CL: see the previous table; BL: 8;1 AL: 0; CS_n, command, address, group
bank address, bank address, data I/O: VDDQ; DM_n: stable at 1; Bank activity: EXTENDED TEMPERATURE SELF
REFRESH operation; Output buffer and RTT: enabled in mode registers;2 ODT signal: midlevel
IPP6x
Self Refresh IPP Current
Same conditions as IDD6E above
IDD6R
Self Refresh Current: Reduced Temperature Range
TC: 0–45°C; Auto self refresh (ASR): disabled; Self refresh temperature range (SRT): reduced;4 CKE: LOW; External clock: off; CK_t and CK_c: LOW; CL: see the previous table; BL: 8;1 AL: 0; CS_n, command, address, bank
group address, bank address, data I/O: VDDQ; DM_n: stable at 1; Bank activity: EXTENDED TEMPERATURE SELF
REFRESH operation; Output buffer and RTT: enabled in mode registers;2 ODT signal: midlevel
IDD7
Operating Bank Interleave Read Current
CKE: HIGH; External clock: on; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see the previous table; BL: 8;15 AL: CL 1; CS_n: HIGH between ACT and RDA; Command, address, group bank adress, bank address inputs: partially
toggling according to the IDD7 Measurement-Loop Pattern table; Data I/O: read data bursts with different data
between one burst and the next one according to the IDD7 Measurement-Loop Pattern table; DM: stable at 1;
Bank activity: two times interleaved cycling through banks (0, 1, ...7) with different addressing, see the IDD7
Measurement-Loop Pattern table; Output buffer and RTT: enabled in mode registers;2 ODT signal: stable at 0;
Pattern details: see the IDD7 Measurement-Loop Pattern table
IPP7
Operating Bank Interleave Read IPP Current
Same conditions as IDD7 above
IDD8
Maximum Power Down Current
Place DRAM in MPSM then CKE: HIGH; External clock: on; tCK, CL: see the previous table; BL: 8;1 AL: 0; CS_n:
stable at 1; Command, address, bank group address, bank address inputs: stable at 0; Data I/O: VDDQ; DM_n:
stable at 1; Bank activity: all banks closed; Output buffer and RTT: Enabled in mode registers;2 ODT signal: stable at 0
IDD9
MBIST-PPR Current 7
Device in MBIST-PPR mode; External clock: on; CS_n: stable at 1 after MBIST-PPR entry; Command, address,
bank group address, bank address inputs: stable at 1; Data I/O: VDDQ; DM_n: stable at 1; Bank activity: all
banks closed; Output buffer and RTT: Enabled in mode registers;2 ODT signal: stable at 0
CCMTD-1406124318-10419
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Measurement Conditions
Table 137: Basic IDD, IPP, and IDDQ Measurement Conditions (Continued)
Symbol
Description
IPP9
MBIST-PPR IPP Current
Same condition with IDD9 above
Notes:
1. Burst length: BL8 fixed by MRS: set MR0[1:0] 00.
2. Output buffer enable: set MR1[12] 0 (output buffer enabled); set MR1[2:1] 00 (RON =
RZQ/7); RTT(NOM) enable: set MR1[10:8] 011 (RZQ/6); RTT(WR) enable: set MR2[11:9] 001
(RZQ/2), and RTT(Park) enable: set MR5[8:6] 000 (disabled).
3. Auto self refresh (ASR): set MR2[6] 0 to disable or MR2[6] 1 to enable feature.
4. Self refresh temperature range (SRT): set MR2[7] 0 for normal or MR2[7] 1 for extended
temperature range.
5. READ burst type: Nibble sequential, set MR0[3] 0.
6. In the dual-rank DDP case, note the following IDD measurement considerations:
• For all IDD measurements except IDD6, the unselected rank should be in an IDD2P condition.
• For all IPP measurements except IPP6, the unselected rank should be in an IDD3N condition.
• For all IDD6/IPP6 measurements, both ranks should be in the same IDD6 condition.
7. When measuring IDD9/IPP9 after entering MBIST-PPR mode and ALERT_N driving LOW,
there is a chance that the DRAM may perform an internal hPPR if fails are found after
internal self-test is completed and before ALERT_N fires HIGH.
CCMTD-1406124318-10419
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
Current Specifications – Patterns and Test Conditions
Current Test Definitions and Patterns
Sub-Loop
Cycle
Number
Command
CS_n
ACT_n
RAS_n/A16
CAS_n/A15
WE_n/A14
ODT
BG[1:0]2
BA[1:0]
A12/BC_n
A[17,13,11]]
A[10]/AP
A[9:7]
A[6:3]
A[2:0]
CKE
CK_t, CK_c
Table 138: IDD0 and IPP0 Measurement-Loop Pattern1
Data3
0
0
ACT
0
0
0
0
0
0
0
0
0
0
0
0
0
0
–
1, 2
D, D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
–
3, 4
D_n,
D_n
1
1
1
1
1
0
3
3
0
0
0
7
F
0
–
PRE
0
1
0
...
Repeat pattern 1...4 until nRAS - 1; truncate if necessary
Static High
Toggling
nRAS
1
0
0
0
0
0
0
0
0
0
0
...
Repeat pattern 1...4 until nRC - 1; truncate if necessary
1
1 × nRC
Repeat sub-loop 0, use BG[1:0] = 1, use BA[1:0] = 1 instead
2
2 × nRC
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 2 instead
3
3 × nRC
Repeat sub-loop 0, use BG[1:0] = 1, use BA[1:0] = 3 instead
4
4 × nRC
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 1 instead
5
5 × nRC
Repeat sub-loop 0, use BG[1:0] = 1, use BA[1:0] = 2 instead
6
6 × nRC
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 3 instead
7
7 × nRC
Repeat sub-loop 0, use BG[1:0] = 1, use BA[1:0] = 0 instead
8
8 × nRC
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 0 instead4
9
9 × nRC
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 1 instead4
10
10 × nRC
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 2 instead4
11
11 × nRC
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 3 instead4
12
12 × nRC
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 1 instead4
13
13 × nRC
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 2 instead4
14
14 × nRC
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 3 instead4
15
15 × nRC
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 0 instead4
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1.
2.
3.
4.
–
DQS_t, DQS_c are VDDQ.
BG1 is a "Don't Care" for x16 devices.
DQ signals are VDDQ.
For x4 and x8 only.
321
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
Sub-Loop
Cycle
Number
Command
CS_n
ACT_n
RAS_n/A16
CAS_n/A15
WE_n/A14
ODT
BG[1:0]2
BA[1:0]
A12/BC_n
A[17,13,11]]
A[10]/AP
A[9:7]
A[6:3]
A[2:0]
CKE
CK_c, CK_t,
Table 139: IDD1 Measurement – Loop Pattern1
Data3
0
0
ACT
0
0
0
0
0
0
0
0
0
0
0
0
0
0
–
1, 2
D, D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
–
3, 4
D_n, D_n
1
1
1
1
1
0
3
3
0
0
0
7
F
0
–
RD
0
...
Repeat pattern 1...4 until nRCD - AL - 1; truncate if necessary
nRCD - AL
...
PRE
...
1
0
0
0
0
0
0
0
0
0
0
1
0
1
0
0
0
0
0
0
0
0
0
0
D0 = 00, D1 =
FF,
D2 = FF, D3 =
00,
D4 = FF, D5 =
00,
D5 = 00, D7 = FF
1 × nRC + 0
ACT
0
0
0
1
1
0
1
1
0
0
0
0
0
0
–
1 × nRC + 1,
2
D, D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
–
1
1
1
1
1
0
3
3
0
0
0
7
F
0
–
...
Repeat pattern nRC + 1...4 until 1 × nRC + nRAS - 1; truncate if necessary
1 × nRC
+nRCD - AL
Static High
0
Repeat pattern 1...4 until nRC - 1; truncate if necessary
1 × nRC + 3, D_n, D_n
4
Toggling
1
Repeat pattern 1...4 until nRAS - 1; truncate if necessary
nRAS
1
1
RD
...
0
1
1
0
1
0
1
1
0
0
0
0
0
0
0
0
Repeat pattern 1...4 until nRAS - 1; truncate if necessary
1 × nRC +
nRAS
...
PRE
0
1
0
1
0
0
1
1
0
0
0
0
Repeat pattern nRC + 1...4 until 2 × nRC - 1; truncate if necessary
2
2 × nRC
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 2 instead
3
3 × nRC
Repeat sub-loop 0, use BG[1:0] = 1, use BA[1:0] = 3 instead
4
4 × nRC
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 1 instead
5
5 × nRC
Repeat sub-loop 0, use BG[1:0] = 1, use BA[1:0] = 2 instead
6
6 × nRC
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 3 instead
7
7 × nRC
Repeat sub-loop 0, use BG[1:0] = 1, use BA[1:0] = 0 instead
8
9 × nRC
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 0 instead4
9
10 × nRC
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 1 instead4
10
11 × nRC
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 2 instead4
11
12 × nRC
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 3 instead4
12
13 × nRC
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 1 instead4
13
14 × nRC
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 2 instead4
14
15 × nRC
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 3 instead4
15
16 × nRC
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 0 instead4
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
D0 = FF, D1 =
00,
D2 = 00, D3 =
FF,
D4 = 00, D5 =
FF,
D5 = FF, D7 = 00
1. DQS_t, DQS_c are VDDQ when not toggling.
322
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
2. BG1 is a "Don't Care" for x16 devices.
3. DQ signals are VDDQ except when burst sequence drives each DQ signal by a READ command.
4. For x4 and x8 only.
Sub-Loop
Cycle
Number
Command
CS_n
ACT_n
RAS_n/A16
CAS_n/A15
WE_n/A14
ODT
BG[1:0]2
BA[1:0]
A12/BC_n
A[17,13,11]]
A[10]/AP
A[9:7]
A[6:3]
A[2:0]
CKE
Static High
Toggling
CK_c, CK_t,
Table 140: IDD2N, IDD3N, and IPP3P Measurement – Loop Pattern1
Data3
0
0
D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
–
1
D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
–
2
D_n
1
1
1
1
1
0
3
3
0
0
0
7
F
0
–
3
D_n
1
1
1
1
1
0
3
3
0
0
0
7
F
0
–
1
4–7
Repeat sub-loop 0, use BG[1:0] = 1, use BA[1:0] = 1 instead
2
8–11
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 2 instead
3
12–15
Repeat sub-loop 0, use BG[1:0] = 1, use BA[1:0] = 3 instead
4
16–19
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 1 instead
5
20–23
Repeat sub-loop 0, use BG[1:0] = 1, use BA[1:0] = 2 instead
6
24–27
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 3 instead
7
28–31
Repeat sub-loop 0, use BG[1:0] = 1, use BA[1:0] = 0 instead
8
32–35
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 0 instead4
9
36–39
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 1 instead4
10
40–43
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 2 instead4
11
44–47
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 3 instead4
12
48–51
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 1 instead4
13
52–55
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 2 instead4
14
56–59
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 3 instead4
15
60–63
Repeat sub-loop 0, use BG[1:0] = 3, use BA[1:0] = 0 instead4
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1.
2.
3.
4.
DQS_t, DQS_c are VDDQ.
BG1 is a "Don't Care" for x16 devices.
DQ signals are VDDQ.
For x4 and x8 only.
323
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
Sub-Loop
Cycle
Number
Command
CS_n
ACT_n
RAS_n/A16
CAS_n/A15
WE_n/A14
ODT
BG[1:0]2
BA[1:0]
A12/BC_n
A[17,13,11]]
A[10]/AP
A[9:7]
A[6:3]
A[2:0]
CKE
Static High
Toggling
CK_c, CK_t,
Table 141: IDD2NT Measurement – Loop Pattern1
Data3
0
0
D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
–
1
D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
–
2
D_n
1
1
1
1
1
0
3
3
0
0
0
7
F
0
–
3
D_n
1
1
1
1
1
0
3
3
0
0
0
7
F
0
–
1
4–7
Repeat sub-loop 0 with ODT = 1, use BG[1:0] = 1, use BA[1:0] = 1 instead
2
8–11
Repeat sub-loop 0 with ODT = 0, use BG[1:0] = 0, use BA[1:0] = 2 instead
3
12–15
Repeat sub-loop 0 with ODT = 1, use BG[1:0] = 1, use BA[1:0] = 3 instead
4
16–19
Repeat sub-loop 0 with ODT = 0, use BG[1:0] = 0, use BA[1:0] = 1 instead
5
20–23
Repeat sub-loop 0 with ODT = 1, use BG[1:0] = 1, use BA[1:0] = 2 instead
6
24–27
Repeat sub-loop 0 with ODT = 0, use BG[1:0] = 0, use BA[1:0] = 3 instead
7
28–31
Repeat sub-loop 0 with ODT = 1, use BG[1:0] = 1, use BA[1:0] = 0 instead
8
32–35
Repeat sub-loop 0 with ODT = 0, use BG[1:0] = 2, use BA[1:0] = 0 instead4
9
36–39
Repeat sub-loop 0 with ODT = 1, use BG[1:0] = 3, use BA[1:0] = 1 instead4
10
40–43
Repeat sub-loop 0 with ODT = 0, use BG[1:0] = 2, use BA[1:0] = 2 instead4
11
44–47
Repeat sub-loop 0 with ODT = 1, use BG[1:0] = 3, use BA[1:0] = 3 instead4
12
48–51
Repeat sub-loop 0 with ODT = 0, use BG[1:0] = 2, use BA[1:0] = 1 instead4
13
52–55
Repeat sub-loop 0 with ODT = 1, use BG[1:0] = 3, use BA[1:0] = 2 instead4
14
56–59
Repeat sub-loop 0 with ODT = 0, use BG[1:0] = 2, use BA[1:0] = 3 instead4
15
60–63
Repeat sub-loop 0 with ODT = 1, use BG[1:0] = 3, use BA[1:0] = 0 instead4
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1.
2.
3.
4.
DQS_t, DQS_c are VSSQ.
BG1 is a "Don't Care" for x16 devices.
DQ signals are VSSQ.
For x4 and x8 only.
324
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
Sub-Loop
Cycle
Number
Command
CS_n
ACT_n
RAS_n/A16
CAS_n/A15
WE_n/A14
ODT
BG[1:0]2
BA[1:0]
A12/BC_n
A[17,13,11]]
A[10]/AP
A[9:7]
A[6:3]
A[2:0]
CKE
CK_c, CK_t,
Table 142: IDD4R Measurement – Loop Pattern1
0
0
RD
0
1
1
0
1
0
0
0
0
0
0
0
0
0
1
D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
2, 3
D_n,
D_n
1
1
1
1
1
0
3
3
0
0
0
7
F
0
4
RD
0
1
1
0
1
0
1
1
0
0
0
7
F
0
5
D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
6, 7
D_n,
D_n
1
1
1
1
1
0
3
3
0
0
0
7
F
0
Static High
Toggling
1
2
8–11
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 2 instead
3
12–15
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 3 instead
4
16–19
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 1 instead
5
20–23
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 2 instead
6
24–27
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 3 instead
7
28–31
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 0 instead
8
32–35
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 0 instead4
9
36–39
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 1 instead4
10
40–43
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 2 instead4
11
44–47
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 3 instead4
12
48–51
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 1 instead4
13
52–55
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 2 instead4
14
56–59
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 3 instead4
15
60–63
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 0 instead4
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Data3
D0 = 00, D1 =
FF,
D2 = FF, D3 =
00,
D4 = FF, D5 =
00,
D5 = 00, D7 =
FF
D0 = FF, D1 = 00
D2 = 00, D3 =
FF
D4 = 00, D5 =
FF
D5 = FF, D7 = 00
1. DQS_t, DQS_c are VDDQ when not toggling.
2. BG1 is a "Don't Care" for x16 devices.
3. Burst sequence driven on each DQ signal by a READ command. Outside burst operation,
DQ signals are VDDQ.
4. For x4 and x8 only.
325
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
Cycle
Number
Command
CS_n
ACT_n
WE_n/A14
ODT
BG[1:0]2
BA[1:0]
A12/BC_n
A[17,13,1
1]]
A[10]/AP
A[9:7]
A[6:3]
A[2:0]
0
0
WR
0
1
1
0
0
1
0
0
0
0
0
0
0
0
1
D
1
0
0
0
0
1
0
0
0
0
0
0
0
0
2, 3
D_n,
D_n
1
1
1
1
0
1
3
3
0
0
0
7
F
0
4
WR
0
1
1
0
0
1
1
1
0
0
0
7
F
0
Static High
Toggling
1
RAS_n/A1
6
CAS_n/A1
5
Sub-Loop
CKE
CK_c,
CK_t,
Table 143: IDD4W Measurement – Loop Pattern1
5
D
1
0
0
0
0
1
0
0
0
0
0
0
0
0
6, 7
D_n,
D_n
1
1
1
1
0
1
3
3
0
0
0
7
F
0
2
8–11
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 2 instead
3
12–15
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 3 instead
4
16–19
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 1 instead
5
20–23
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 2 instead
6
24–27
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 3 instead
7
28–31
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 0 instead
8
32–35
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 0 instead4
9
36–39
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 1 instead4
10
40–43
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 2 instead4
11
44–47
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 3 instead4
12
48–51
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 1 instead4
13
52–55
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 2 instead4
14
56–59
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 3 instead4
15
60–63
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 0 instead4
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Data3
D0 = 00, D1 = FF,
D2 = FF, D3 = 00,
D4 = FF, D5 = 00,
D5 = 00, D7 = FF
D0 = FF, D1 = 00
D2 = 00, D3 = FF
D4 = 00, D5 = FF
D5 = FF, D7 = 00
1. DQS_t, DQS_c are VDDQ when not toggling.
2. BG1 is a "Don't Care" for x16 devices.
3. Burst sequence driven on each DQ signal by WRITE command. Outside burst operation,
DQ signals are VDDQ.
4. For x4 and x8 only.
326
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
Sub-Loop
Cycle
Number
Command
CS_n
ACT_n
RAS_n/A16
CAS_n/A15
WE_n/A14
ODT
BG[1:0]3
BA[1:0]
A12/BC_n
A[17,13,11]]
A[10]/AP
A[9:7]
A[6:3]
A[2:0]
CKE
CK_c, CK_t,
Table 144: IDD4Wc Measurement – Loop Pattern1
0
0
WR
0
1
1
0
0
1
0
0
0
0
0
0
0
0
1, 2
D, D
1
0
0
0
0
1
0
0
0
0
0
0
0
0
3, 4
D_n,
D_n
1
1
1
1
0
1
3
3
0
0
0
7
F
0
Static High
Toggling
1
5
WR
0
1
1
0
0
1
1
1
0
0
0
7
F
0
6, 7
D, D
1
0
0
0
0
1
0
0
0
0
0
0
0
0
8, 9
D_n,
D_n
1
1
1
1
0
1
3
3
0
0
0
7
F
0
2
10–14
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 2 instead
3
15–19
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 3 instead
4
20–24
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 1 instead
5
25–29
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 2 instead
6
30–34
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 3 instead
7
35–39
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 0 instead
8
40–44
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 0 instead4
9
45–49
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 1 instead4
10
50–54
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 2 instead4
11
55–59
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 3 instead4
12
60–64
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 1 instead4
13
65–69
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 2 instead4
14
70–74
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 3 instead4
15
75–79
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 0 instead4
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Data4
D0 = 00, D1 = FF,
D2 = FF, D3 = 00,
D4 = FF, D5 = 00,
D8 = CRC
D0 = FF, D1 = 00,
D2 = 00, D3 = FF,
D4 = 00, D5 = FF,
D5 = FF, D7 = 00
D8 = CRC
1.
2.
3.
4.
Pattern provided for reference only.
DQS_t, DQS_c are VDDQ when not toggling.
BG1 is a "Don't Care" for x16 devices.
Burst sequence driven on each DQ signal by WRITE command. Outside burst operation,
DQ signals are VDDQ.
5. For x4 and x8 only.
327
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
Sub-Loop
Cycle
Number
Command
CS_n
ACT_n
RAS_n/A16
CAS_n/A15
WE_n/A14
ODT
BG[1:0]2
BA[1:0]
A12/BC_n
A[17,13,11]]
A[10]/AP
A[9:7]
A[6:3]
A[2:0]
CKE
Data3
0
0
REF
0
1
0
0
1
0
0
0
0
0
0
0
0
0
–
1
1
D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
–
2
D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
–
3
D_n
1
1
1
1
1
0
3
3
0
0
0
7
F
0
–
4
D_n
1
1
1
1
1
0
3
3
0
0
0
7
F
0
–
Static High
Toggling
CK_c, CK_t,
Table 145: IDD5R Measurement – Loop Pattern1
2
5–8
Repeat pattern 1...4, use BG[1:0] = 1, use BA[1:0] = 1 instead
9–12
Repeat pattern 1...4, use BG[1:0] = 0, use BA[1:0] = 2 instead
13–16
Repeat pattern 1...4, use BG[1:0] = 1, use BA[1:0] = 3 instead
17–20
Repeat pattern 1...4, use BG[1:0] = 0, use BA[1:0] = 1 instead
21–24
Repeat pattern 1...4, use BG[1:0] = 1, use BA[1:0] = 2 instead
25–28
Repeat pattern 1...4, use BG[1:0] = 0, use BA[1:0] = 3 instead
29–32
Repeat pattern 1...4, use BG[1:0] = 1, use BA[1:0] = 0 instead
33–36
Repeat pattern 1...4, use BG[1:0] = 2, use BA[1:0] = 0 instead4
37–40
Repeat pattern 1...4, use BG[1:0] = 3, use BA[1:0] = 1 instead4
41–44
Repeat pattern 1...4, use BG[1:0] = 2, use BA[1:0] = 2 instead4
45–48
Repeat pattern 1...4, use BG[1:0] = 3, use BA[1:0] = 3 instead4
49–52
Repeat pattern 1...4, use BG[1:0] = 2, use BA[1:0] = 1 instead4
53–56
Repeat pattern 1...4, use BG[1:0] = 3, use BA[1:0] = 2 instead4
57–60
Repeat pattern 1...4, use BG[1:0] = 2, use BA[1:0] = 3 instead4
61–64
Repeat pattern 1...4, use BG[1:0] = 3, use BA[1:0] = 0 instead4
65...nREFI 1
Repeat sub-loop 1; truncate if necessary
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1.
2.
3.
4.
DQS_t, DQS_c are VDDQ.
BG1 is a "Don't Care" for x16 devices.
DQ signals are VDDQ.
For x4 and x8 only.
328
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
Sub-Loop
Cycle
Number
Command
CS_n
ACT_n
RAS_n/A16
CAS_n/A15
WE_n/A14
ODT
BG[1:0]2
BA[1:0]
A12/BC_n
A[17,13,11]]
A[10]/AP
A[9:7]
A[6:3]
A[2:0]
CKE
CK_t, CK_c
Table 146: IDD7 Measurement – Loop Pattern1
Data3
0
0
ACT
0
0
0
0
0
0
0
0
0
0
0
0
0
0
–
1
RDA
0
1
1
0
1
0
0
0
0
0
1
0
0
0
2
D
1
0
0
0
0
0
0
0
0
0
0
0
0
0
–
3
D_n
1
1
1
1
1
0
3
3
0
0
0
7
F
0
–
...
Static High
Toggling
1
Repeat pattern 2...3 until nRRD - 1, if nRRD > 4. Truncate if necessary
nRRD
ACT
0
0
0
0
0
0
1
1
0
0
0
0
0
0
nRRD+1
RDA
0
1
1
0
1
0
1
1
0
0
1
0
0
0
–
...
Repeat pattern 2...3 until 2 × nRRD - 1, if nRRD > 4. Truncate if necessary
2
2 × nRRD
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 2 instead
3
3 × nRRD
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 3 instead
4
4 × nRRD
Repeat pattern 2...3 until nFAW - 1, if nFAW > 4 × nRRD. Truncate if necessary
5
nFAW
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 1 instead
6
nFAW + nRRD
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 2 instead
7
nFAW + 2 × nRRD
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 3 instead
8
nFAW + 3 × nRRD
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 0 instead
9
nFAW + 4 × nRRD
Repeat sub-loop 4
10
2 × nFAW
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 0 instead
11
2 × nFAW + nRRD
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 1 instead
12
2 × nFAW + 2 ×
nRRD
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 2 instead
13
2 × nFAW + 3 ×
nRRD
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 3 instead
14
2 × nFAW + 4 ×
nRRD
Repeat sub-loop 4
15
3 × nFAW
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 1 instead
16
3 × nFAW + nRRD
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 2 instead
17
3 × nFAW + 2 ×
nRRD
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 3 instead
18
3 × nFAW + 3 ×
nRRD
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 0 instead
19
3 × nFAW + 4 ×
nRRD
Repeat sub-loop 4
20
4 × nFAW
Repeat pattern 2...3 until nRC - 1, if nRC > 4 × nFAW. Truncate if necessary
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1. DQS_t, DQS_c are VDDQ.
2. BG1 is a "Don't Care" for x16 devices.
3. DQ signals are VDDQ except when burst sequence drives each DQ signal by a READ command.
329
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
4. For x4 and x8 only.
IDD Specifications
20-20-20
20-20-20
22-22-22
20-20-20
24-24-24
12
12
13
14
14
15
16
16
17
18
18
19
20
20
21
22
20
22
24
CK
CWL
9
11
11
10
12
12
11
14
14
16
16
16
18
18
18
14
18
18
16
20
20
CK
nRCD
10
11
12
12
13
14
14
15
16
16
17
18
18
19
20
19
20
21
20
22
24
CK
nRC
38
39
40
44
45
46
50
51
52
55
56
57
61
62
63
66
67
68
72
74
76
CK
nRP
10
11
12
12
13
14
14
15
16
16
17
18
18
19
20
19
20
21
20
22
24
CK
nRAS
0.937
0.833
0.75
0.682
22-22-22
18-18-18
11
1.071
21-21-21
18-18-18
10
1.25
19-19-19
16-16-16
CL
tCK
17-17-17
16-16-16
Uni
t
Symbol
15-15-15
DDR4-3200
14-14-14
DDR4-2933
14-14-14
DDR4-2666
13-13-13
DDR4-2400
12-12-12
DDR4-2133
12-12-12
DDR4-1866
11-11-11
DDR4-1600
10-10-10
Table 147: Timings used for IDD, IPP, and IDDQ Measurement – Loop Patterns
0.625
ns
28
32
36
39
43
47
52
CK
x41
16
16
16
16
16
16
16
CK
x8
20
22
23
26
28
31
34
CK
x1
6
28
28
32
36
40
44
48
CK
nRRD x4
_S
x8
4
4
4
4
4
4
4
CK
4
4
4
4
4
4
4
CK
x1
6
5
6
6
7
8
8
9
CK
nRRD x4
_L
x8
5
5
6
6
7
8
8
CK
5
5
6
6
7
8
8
CK
x1
6
6
6
7
8
9
10
11
CK
nCCD_S
4
4
4
4
4
4
4
CK
nCCD_L
5
5
6
6
7
8
8
CK
nWTR_S
2
3
3
3
4
4
4
CK
nWTR_L
6
7
8
9
10
11
12
CK
nFA
W
nREFI
6,240
7,283
8,325
9,364
10,400
11,437
12,480
CK
nRFC 2Gb
128
150
171
193
214
235
256
CK
nRFC 4Gb
208
243
278
313
347
382
416
CK
nRFC 8Gb
280
327
374
421
467
514
560
CK
nRFC
16Gb
280
327
374
421
467
514
560
CK
Note:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1. 1KB based x4 use same numbers of clocks for nFAW as the x8.
330
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2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
Current Specifications – Limits
Table 148: IDD, IPP, and IDDQ Current Limits – Rev. B (0°C ≤ TC ≤ 95°C)
Symbol
IDD0: One bank ACTIVATE-to-PRECHARGE current
IPP0: One bank ACTIVATE-to-PRECHARGE IPP
current
Width
DDR4-2400
DDR4-2666
Unit
x8
48
51
mA
x16
80
85
mA
x8
3
3
mA
x16
4
4
IDD1: One bank ACTIVATE-to-READ-to- PRECHARGE current
x8
60
63
mA
x16
100
105
mA
IDD2N: Precharge standby current
ALL
34
35
mA
x8
50
50
mA
x16
75
75
mA
IDD2P: Precharge power-down current
ALL
25
25
mA
IDD2Q: Precharge quiet standby current
ALL
30
30
mA
x8
43
46
mA
x16
47
50
IDD2NT: Precharge standby ODT current
IDD3N: Active standby current
IPP3N: Active standby IPP current
IDD3P: Active power-down current
IDD4R: Burst read current
IDD4W: Burst write current
IDD5R: Distributed refresh current (1X REF)
ALL
3
3
mA
x8
37
39
mA
x16
41
43
x8
138
149
mA
x16
255
275
mA
x8
126
135
mA
x16
248
264
mA
x8
54
55
mA
x16
57
58
IPP5R: Distributed refresh IPP current (1X REF)
ALL
5
5
mA
IDD6N: Self refresh
current1
ALL
30
30
mA
IDD6E: Self refresh
current2
ALL
35
35
mA
IDD6R: Self refresh
current3, 4
ALL
20
20
mA
IDD6A: Auto self refresh current, 25°C 4
ALL
8.6
8.6
mA
IDD6A: Auto self refresh current, 45°C
4
ALL
20
20
mA
IDD6A: Auto self refresh current, 75°C
4
ALL
30
30
mA
IPP6x: Auto self refresh
current23
IDD7: Bank interleave read current
IPP7: Bank interleave read IPP current
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
ALL
5
5
mA
x8
177
182
mA
x16
252
262
mA
x8
15
15
mA
x16
20
20
mA
331
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
Table 148: IDD, IPP, and IDDQ Current Limits – Rev. B (0°C ≤ TC ≤ 95°C) (Continued)
Symbol
IDD8: Maximum power-down current
Notes:
Width
DDR4-2400
DDR4-2666
Unit
x8
25
25
mA
x16
25
25
1. Applicable for MR2 settings A7 = 0 and A6 = 0; Manual mode with normal temperature
range of operation (–40–85°C).
2. Applicable for MR2 settings A7 = 1 and A6 = 0; Manual mode with extended temperature range of operation (–40–95°C).
3. Applicable for MR2 settings A7 = 0 and A6 = 1; Manual mode with reduced temperature
range of operation (–40–45°C).
4. IDD6E, DD6R, and IDD6A values are verified by design and characterization, and may not be
subject to production test.
5. When additive latency is enabled for IDD0, current changes by approximately 0%.
6. When additive latency is enabled for IDD1, current changes by approximately +5% (x8),
+4% (x16).
7. When additive latency is enabled for IDD2N, current changes by approximately +0%.
8. When DLL is disabled for IDD2N, current changes by approximately –23%.
9. When CAL is enabled for IDD2N, current changes by approximately –25%.
10. When gear-down is enabled for IDD2N, current changes by approximately 0%.
11. When CA parity is enabled for IDD2N, current changes by approximately +7%.
12. When additive latency is enabled for IDD3N, current changes by approximately +1%.
13. When additive latency is enabled for IDD4R, current changes by approximately +5%.
14. When read DBI is enabled for IDD4R, current changes by approximately 0%.
15. When additive latency is enabled for IDD4W, current changes by approximately +3% (x8),
+4% (x16).
16. When write DBI is enabled for IDD4W, current changes by approximately 0%.
17. When write CRC is enabled for IDD4W, current changes by approximately 10% (x8), 10%
(x16).
18. When CA parity is enabled for IDD4W, current changes by approximately +12% (x8),
+12% (x16).
19. When 2X REF is enabled for IDD5R, current changes by approximately –14%.
20. When 4X REF is enabled for IDD5R, current changes by approximately –33%.
21. IPP0 test and limit is applicable for IDD0 and IDD1 conditions.
22. IPP3N test and limit is applicable for all IDD2x, IDD3x, IDD4x, and IDD8 conditions; That is, testing IPP3N should satisfy the IPPs for the noted IDD tests.
23. IPP6x is applicable to IDD6N, IDD6E, IDD6R, and IDD6A conditions.
24. When Tc < 0°C: IDD2P and IDD3P must be derated by 6%; IDD4R and IDD4W must be derated
by 4%; IDD6, IDD6E, and IDD7 must be derated by 11%.
Table 149: IDD, IPP, and IDDQ Current Limits – Rev. B (0°C ≤ TC ≤ 105°C)
Symbol
Width
DDR4-2400
DDR4-2666
Unit
IDD0: One bank ACTIVATE-to-PRECHARGE current
x8
50
53
mA
x16
83
88
mA
IPP0: One bank ACTIVATE-to-PRECHARGE IPP
current
x8
3
3
mA
x16
4
4
CCMTD-1406124318-10419
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332
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
Table 149: IDD, IPP, and IDDQ Current Limits – Rev. B (0°C ≤ TC ≤ 105°C) (Continued)
Symbol
IDD1: One bank ACTIVATE-to-READ-to- PRECHARGE current
IDD2N: Precharge standby current
IDD2NT: Precharge standby ODT current
IDD2P: Precharge power-down current
IDD2Q: Precharge quiet standby current
IDD3N: Active standby current
IPP3N: Active standby IPP current
IDD3P: Active power-down current
IDD4R: Burst read current
IDD4W: Burst write current
IDD5R: Burst refresh current (1X REF)
IPP5R: Burst refresh IPP current (1X REF)
IDD6N: Self refresh
current1
IDD6E: Self refresh current2
IDD6R: Self refresh
current3, 4
Width
DDR4-2400
DDR4-2666
Unit
x8
62
65
mA
x16
103
108
mA
x8
36
37
mA
x16
37
38
x8
52
52
mA
x16
78
78
mA
x8
27
27
mA
x16
28
28
x8
32
32
x16
33
33
x8
45
48
mA
mA
x16
50
53
ALL
3
3
mA
x8
39
41
mA
x16
44
46
x8
140
151
mA
x16
259
279
mA
x8
129
138
mA
x16
253
269
mA
mA
x8
76
77
x16
83
84
ALL
7
7
mA
x8
32
32
mA
x16
33
33
x8
37
37
x16
38
38
x8
22
22
mA
mA
x16
23
23
IDD6A: Auto self refresh current, 25°C 4
ALL
8.6
8.6
mA
IDD6A: Auto self refresh current, 45°C
4
ALL
20
20
mA
IDD6A: Auto self refresh current, 75°C
4
ALL
30
30
mA
IPP6x: Auto self refresh
current23
IDD7: Bank interleave read current
IPP7: Bank interleave read IPP current
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
ALL
5
5
mA
x8
179
184
mA
x16
254
264
mA
x8
15
15
mA
x16
20
20
mA
333
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
Table 149: IDD, IPP, and IDDQ Current Limits – Rev. B (0°C ≤ TC ≤ 105°C) (Continued)
Symbol
IDD8: Maximum power-down current
Notes:
Width
DDR4-2400
DDR4-2666
Unit
x8
27
27
mA
x16
28
28
1. Applicable for MR2 settings A7 = 0 and A6 = 0; Manual mode with normal temperature
range of operation (–40–85°C).
2. Applicable for MR2 settings A7 = 1 and A6 = 0; Manual mode with extended temperature range of operation (–40–105°C).
3. Applicable for MR2 settings A7 = 0 and A6 = 1; Manual mode with reduced temperature
range of operation (–40–45°C).
4. IDD6R and IDD6A values are typical.
5. When additive latency is enabled for IDD0, current changes by approximately 0%.
6. When additive latency is enabled for IDD1, current changes by approximately +5% (x8),
+4% (x16).
7. When additive latency is enabled for IDD2N, current changes by approximately +0%.
8. When DLL is disabled for IDD2N, current changes by approximately –23%.
9. When CAL is enabled for IDD2N, current changes by approximately –25%.
10. When gear-down is enabled for IDD2N, current changes by approximately 0%.
11. When CA parity is enabled for IDD2N, current changes by approximately +7%.
12. When additive latency is enabled for IDD3N, current changes by approximately +1%.
13. When additive latency is enabled for IDD4R, current changes by approximately +5%.
14. When read DBI is enabled for IDD4R, current changes by approximately 0%.
15. When additive latency is enabled for IDD4W, current changes by approximately +3% (x8),
+4% (x16).
16. When write DBI is enabled for IDD4W, current changes by approximately 0%.
17. When write CRC is enabled for IDD4W, current changes by approximately 10% (x8), 10%
(x16).
18. When CA parity is enabled for IDD4W, current changes by approximately +12% (x8),
+12% (x16).
19. When 2X REF is enabled for IDD5R, current changes by approximately –14%.
20. When 4X REF is enabled for IDD5R, current changes by approximately –33%.
21. IPP0 test and limit is applicable for IDD0 and IDD1 conditions.
22. IPP3N test and limit is applicable for all IDD2x, IDD3x, IDD4x, and IDD8 conditions; That is, testing IPP3N should satisfy the IPPs for the noted IDD tests.
23. IPP6x is applicable to IDD6N, IDD6E, IDD6R, and IDD6A conditions.
24. When TC < 0°C: IDD2P and IDD3P must be derated by 6%; IDD4R and IDD4W must be derated
by 4%; IDD6, IDD6E, and IDD7 must be derated by 11%.
Table 150: IDD, IPP, and IDDQ Current Limits – Rev. B (0°C ≤ TC ≤ 125°C)
Symbol
IDD0: One bank ACTIVATE-to-PRECHARGE current
IPP0: One bank ACTIVATE-to-PRECHARGE IPP
current
IDD1: One bank ACTIVATE-to-READ-to- PRECHARGE current
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Width
DDR4-2400
DDR4-2666
Unit
x8
68
68
mA
x16
95
95
mA
x8
3
3
mA
x16
4
4
x8
80
80
mA
x16
115
115
mA
334
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
Table 150: IDD, IPP, and IDDQ Current Limits – Rev. B (0°C ≤ TC ≤ 125°C) (Continued)
Symbol
IDD2N: Precharge standby current
IDD2NT: Precharge standby ODT current
IDD2P: Precharge power-down current
IDD2Q: Precharge quiet standby current
IDD3N: Active standby current
IPP3N: Active standby IPP current
IDD3P: Active power-down current
IDD4R: Burst read current
IDD4W: Burst write current
IDD5R: Burst refresh current (1X REF)
IPP5R: Burst refresh IPP current (1X REF)
IDD6N: Self refresh current1
IDD6E: Self refresh
current2
IDD6R: Self refresh current3, 4
Width
DDR4-2400
DDR4-2666
Unit
x8
53
53
mA
x16
55
55
x8
77
77
mA
x16
85
85
mA
x8
45
45
mA
x16
45
45
x8
49
49
x16
49
49
x8
76
76
x16
76
76
ALL
3
3
mA
mA
mA
mA
x8
69
69
x16
69
69
x8
170
170
mA
x16
290
290
mA
x8
161
161
mA
x16
284
284
mA
x8
133
133
mA
x16
147
147
ALL
12
12
mA
x8
51
51
mA
x16
51
51
x8
59
59
x16
59
59
x8
47
47
mA
mA
x16
47
47
IDD6A: Auto self refresh current, 25°C
4
ALL
8.6
8.6
mA
IDD6A: Auto self refresh current, 45°C
4
ALL
20
20
mA
IDD6A: Auto self refresh current, 75°C 4
ALL
30
30
mA
ALL
5
5
mA
x8
192
192
mA
x16
273
273
mA
x8
15
15
mA
x16
20
20
mA
x8
42
42
mA
x16
42
42
IPP6x: Auto self refresh
current23
IDD7: Bank interleave read current
IPP7: Bank interleave read IPP current
IDD8: Maximum power-down current
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1. Applicable for MR2 settings A7 = 0 and A6 = 0; Manual mode with normal temperature
range of operation (–40–85°C).
335
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
2. Applicable for MR2 settings A7 = 1 and A6 = 0; Manual mode with extended temperature range of operation (–40–125°C).
3. Applicable for MR2 settings A7 = 0 and A6 = 1; Manual mode with reduced temperature
range of operation (–40–45°C).
4. IDD6R and IDD6A values are typical.
5. When additive latency is enabled for IDD0, current changes by approximately 0%.
6. When additive latency is enabled for IDD1, current changes by approximately +5% (x8),
+4% (x16).
7. When additive latency is enabled for IDD2N, current changes by approximately +0%.
8. When DLL is disabled for IDD2N, current changes by approximately –23%.
9. When CAL is enabled for IDD2N, current changes by approximately –25%.
10. When gear-down is enabled for IDD2N, current changes by approximately 0%.
11. When CA parity is enabled for IDD2N, current changes by approximately +7%.
12. When additive latency is enabled for IDD3N, current changes by approximately +1%.
13. When additive latency is enabled for IDD4R, current changes by approximately +5%.
14. When read DBI is enabled for IDD4R, current changes by approximately 0%.
15. When additive latency is enabled for IDD4W, current changes by approximately +3% (x8),
+4% (x16).
16. When write DBI is enabled for IDD4W, current changes by approximately 0%.
17. When write CRC is enabled for IDD4W, current changes by approximately 10% (x8), 10%
(x16).
18. When CA parity is enabled for IDD4W, current changes by approximately +12% (x8),
+12% (x16).
19. When 2X REF is enabled for IDD5R, current changes by approximately –14%.
20. When 4X REF is enabled for IDD5R, current changes by approximately –33%.
21. IPP0 test and limit is applicable for IDD0 and IDD1 conditions.
22. IPP3N test and limit is applicable for all IDD2x, IDD3x, IDD4x, and IDD8 conditions; That is, testing IPP3N should satisfy the IPPs for the noted IDD tests.
23. IPP6x is applicable to IDD6N, IDD6E, IDD6R, and IDD6A conditions.
24. When TC < 0°C: IDD2P and IDD3P must be derated by 6%; IDD4R and IDD4W must be derated
by 4%; IDD6, IDD6E, and IDD7 must be derated by 11%.
Table 151: IDD, IPP, and IDDQ Current Limits – Rev. E (0°C ≤ TC ≤ 95°C)
Symbol
IDD0: One bank ACTIVATE-to-PRECHARGE current
IPP0: One bank ACTIVATE-to-PRECHARGE IPP current
Width
DDR4-2400
DDR4-2666
DDR4-3200
Unit
x8
43
45
49
mA
x16
50
52
56
mA
x8
3
3
3
mA
x16
4
4
4
x8
59
61
65
mA
x16
77
79
83
mA
IDD2N: Precharge standby current
ALL
31
32
34
mA
IDD2NT: Precharge standby ODT current
x8
40
42
46
mA
x16
48
51
57
mA
IDD2P: Precharge power-down current
ALL
25
25
25
mA
IDD2Q: Precharge quiet standby current
ALL
27
27
27
mA
IDD1: One bank ACTIVATE-to-READ-toPRECHARGE current
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
336
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
Table 151: IDD, IPP, and IDDQ Current Limits – Rev. E (0°C ≤ TC ≤ 95°C) (Continued)
Symbol
IDD3N: Active standby current
IPP3N: Active standby IPP current
IDD3P: Active power-down current
IDD4R: Burst read current
IDD4W: Burst write current
Width
DDR4-2400
DDR4-2666
DDR4-3200
Unit
x8
39
41
45
mA
x16
40
42
46
ALL
3
3
3
mA
mA
x8
31
32
34
x16
32
33
35
x8
150
161
184
mA
x16
261
282
322
mA
x8
127
136
155
mA
x16
205
223
258
mA
IDD5R: Distributed refresh current (1X
REF)
ALL
67
68
70
mA
IPP5R: Distributed refresh IPP current
(1X REF)
ALL
5
5
5
mA
IDD6N: Self refresh current1
ALL
34
34
34
mA
IDD6E: Self refresh current2
ALL
58
58
58
mA
ALL
21
21
21
mA
ALL
8.6
8.6
8.6
mA
IDD6R: Self refresh
current3, 4
IDD6A: Auto self refresh current, 25°C
4
IDD6A: Auto self refresh current, 45°C
4
ALL
21
21
21
mA
IDD6A: Auto self refresh current, 75°C 4
ALL
31
31
31
mA
IDD6A: Auto self refresh current, 95°C 4
ALL
58
58
58
mA
ALL
5
5
5
mA
IPP6x: Auto self refresh
current23
IDD7: Bank interleave read current
IPP7: Bank interleave read IPP current
IDD8: Maximum power-down current
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
x8
175
180
190
mA
x16
243
252
270
mA
x8
13
13
13
mA
x16
18
18
18
mA
ALL
18
18
18
mA
1. Applicable for MR2 settings A7 = 0 and A6 = 0; Manual mode with normal temperature
range of operation (–40–85°C).
2. Applicable for MR2 settings A7 = 1 and A6 = 0; Manual mode with extended temperature range of operation (–40–95°C).
3. Applicable for MR2 settings A7 = 0 and A6 = 1; Manual mode with reduced temperature
range of operation (–40–45°C).
4. IDD6E, DD6R, and IDD6A values are verified by design and characterization, and may not be
subject to production test.
5. When additive latency is enabled for IDD0, current changes by approximately 1%.
6. When additive latency is enabled for IDD1, current changes by approximately +8% (x8),
+7% (x16).
7. When additive latency is enabled for IDD2N, current changes by approximately +1%.
8. When DLL is disabled for IDD2N, current changes by approximately –6%.
9. When CAL is enabled for IDD2N, current changes by approximately –30%.
10. When gear-down is enabled for IDD2N, current changes by approximately 0%.
337
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
26.
When CA parity is enabled for IDD2N, current changes by approximately +10%.
When additive latency is enabled for IDD3N, current changes by approximately +1%.
When additive latency is enabled for IDD4R, current changes by approximately +4%.
When read DBI is enabled for IDD4R, current changes by approximately –14%.
When additive latency is enabled for IDD4W, current changes by approximately +3% (x8),
+4% (x16).
When write DBI is enabled for IDD4W, current changes by approximately –20%.
When write CRC is enabled for IDD4W, current changes by approximately –5% (x8), –5%
(x16).
When CA parity is enabled for IDD4W, current changes by approximately +12% (x8),
+12% (x16).
When 2X REF is enabled for IDD5R, current changes by approximately 0%.
When 4X REF is enabled for IDD5R, current changes by approximately 0%.
When 2X REF is enabled for IPP5R, current changes by approximately 0%.
When 4X REF is enabled for IPP5R, current changes by approximately 0%.
IPP0 test and limit is applicable for IDD0 and IDD1 conditions.
IPP3N test and limit is applicable for all IDD2x, IDD3x, IDD4x, and IDD8 conditions; That is, testing IPP3N should satisfy the IPPs for the noted IDD tests.
IPP6x is applicable to IDD6N, IDD6E, IDD6R, and IDD6A conditions.
When TC < 0°C: IDD2P and IDD3P must be derated by 6%; IDD4R and IDD4W must be derated
by 4%; IDD6, IDD6E, and IDD7 must be derated by 11%.
Table 152: IDD, IPP, and IDDQ Current Limits – Rev. E (0°C ≤ TC ≤ 105°C)
Symbol
Width
DDR4-2400
DDR4-2666
DDR4-3200
Unit
IDD0: One bank ACTIVATE-to-PRECHARGE current
x8
45
47
51
mA
x16
52
54
58
mA
IPP0: One bank ACTIVATE-to-PRECHARGE IPP current
x8
3
3
3
mA
x16
4
4
4
IDD1: One bank ACTIVATE-to-READ-toPRECHARGE current
x8
61
63
67
mA
x16
79
81
85
mA
IDD2N: Precharge standby current
ALL
33
34
36
mA
IDD2NT: Precharge standby ODT current
x8
42
44
48
mA
x16
49
53
59
mA
IDD2P: Precharge power-down current
ALL
26
26
26
mA
IDD2Q: Precharge quiet standby current
ALL
29
29
29
mA
x8
41
43
47
mA
x16
42
44
48
ALL
3
3
3
mA
mA
IDD3N: Active standby current
IPP3N: Active standby IPP current
IDD3P: Active power-down current
IDD4R: Burst read current
IDD4W: Burst write current
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
x8
34
35
37
x16
35
36
38
x8
155
166
189
mA
x16
265
292
326
mA
x8
132
141
160
mA
x16
210
228
263
mA
338
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
Table 152: IDD, IPP, and IDDQ Current Limits – Rev. E (0°C ≤ TC ≤ 105°C) (Continued)
Symbol
Width
DDR4-2400
DDR4-2666
DDR4-3200
Unit
IDD5R: Distributed refresh current (1X
REF)
ALL
97
98
100
mA
IPP5R: Distributed refresh IPP current
(1X REF)
ALL
5
5
5
mA
IDD6N: Self refresh current1
ALL
34
34
34
mA
current2
ALL
80
80
80
mA
ALL
21
21
21
mA
IDD6A: Auto self refresh current, 25°C
4
ALL
8.6
8.6
8.6
mA
IDD6A: Auto self refresh current, 45°C
4
ALL
21
21
21
mA
IDD6A: Auto self refresh current, 75°C
4
ALL
31
31
31
mA
IDD6A: Auto self refresh current, 95°C 4
ALL
59
59
59
mA
ALL
6
6
6
mA
x8
180
185
195
mA
x16
248
257
275
mA
x8
13
13
13
mA
x16
18
18
18
mA
ALL
20
20
20
mA
IDD6E: Self refresh
IDD6R: Self refresh current3, 4
IPP6x: Auto self refresh
current23
IDD7: Bank interleave read current
IPP7: Bank interleave read IPP current
IDD8: Maximum power-down current
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1. Applicable for MR2 settings A7 = 0 and A6 = 0; Manual mode with normal temperature
range of operation (–40–85°C).
2. Applicable for MR2 settings A7 = 1 and A6 = 0; Manual mode with extended temperature range of operation (–40–105°C).
3. Applicable for MR2 settings A7 = 0 and A6 = 1; Manual mode with reduced temperature
range of operation (–40–45°C).
4. IDD6E, DD6R, and IDD6A values are verified by design and characterization, and may not be
subject to production test.
5. When additive latency is enabled for IDD0, current changes by approximately 1%.
6. When additive latency is enabled for IDD1, current changes by approximately +8% (x8),
+7% (x16).
7. When additive latency is enabled for IDD2N, current changes by approximately +1%.
8. When DLL is disabled for IDD2N, current changes by approximately –6%.
9. When CAL is enabled for IDD2N, current changes by approximately –30%.
10. When gear-down is enabled for IDD2N, current changes by approximately 0%.
11. When CA parity is enabled for IDD2N, current changes by approximately +10%.
12. When additive latency is enabled for IDD3N, current changes by approximately +1%.
13. When additive latency is enabled for IDD4R, current changes by approximately +4%.
14. When read DBI is enabled for IDD4R, current changes by approximately –14%.
15. When additive latency is enabled for IDD4W, current changes by approximately +3% (x8),
+4% (x16).
16. When write DBI is enabled for IDD4W, current changes by approximately –20%.
17. When write CRC is enabled for IDD4W, current changes by approximately –5% (x8), –5%
(x16).
18. When CA parity is enabled for IDD4W, current changes by approximately +12% (x8),
+12% (x16).
19. When 2X REF is enabled for IDD5R, current changes by approximately 0%.
339
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
20.
21.
22.
23.
24.
When 4X REF is enabled for IDD5R, current changes by approximately 0%.
When 2X REF is enabled for IPP5R, current changes by approximately 0%.
When 4X REF is enabled for IPP5R, current changes by approximately 0%.
IPP0 test and limit is applicable for IDD0 and IDD1 conditions.
IPP3N test and limit is applicable for all IDD2x, IDD3x, IDD4x, and IDD8 conditions; That is, testing IPP3N should satisfy the IPPs for the noted IDD tests.
25. IPP6x is applicable to IDD6N, IDD6E, IDD6R, and IDD6A conditions.
26. When TC < 0°C: IDD2P and IDD3P must be derated by 6%; IDD4R and IDD4W must be derated
by 4%; IDD6, IDD6E, and IDD7 must be derated by 11%.
Table 153: IDD, IPP, and IDDQ Current Limits – Rev. E (0°C ≤ TC ≤ 125°C)
Symbol
IDD0: One bank ACTIVATE-to-PRECHARGE current
IPP0: One bank ACTIVATE-to-PRECHARGE IPP current
Width
DDR4-2400
DDR4-2666
DDR4-3200
Unit
x8
47
49
53
mA
x16
54
56
60
mA
x8
3
3
3
mA
x16
4
4
4
IDD1: One bank ACTIVATE-to-READ-toPRECHARGE current
x8
63
65
69
mA
x16
81
83
87
mA
IDD2N: Precharge standby current
ALL
35
36
38
mA
x8
44
46
50
mA
x16
50
55
61
mA
IDD2NT: Precharge standby ODT current
IDD2P: Precharge power-down current
ALL
27
27
27
mA
IDD2Q: Precharge quiet standby current
ALL
31
31
31
mA
x8
43
45
49
mA
x16
44
46
50
IDD3N: Active standby current
IPP3N: Active standby IPP current
ALL
3
3
3
mA
x8
37
38
40
mA
x16
38
39
41
x8
160
171
194
mA
x16
269
302
330
mA
x8
137
146
165
mA
x16
215
233
268
mA
IDD5R: Distributed refresh current (1X
REF)
ALL
170
171
172
mA
IPP5R: Distributed refresh IPP current
(1X REF)
ALL
10
10
10
mA
IDD6N: Self refresh current1
ALL
34
34
34
mA
IDD6E: Self refresh
current2
ALL
155
155
155
mA
IDD6R: Self refresh
current3, 4
IDD3P: Active power-down current
IDD4R: Burst read current
IDD4W: Burst write current
ALL
21
21
21
mA
4
ALL
8.6
8.6
8.6
mA
IDD6A: Auto self refresh current, 45°C 4
ALL
21
21
21
mA
4
ALL
31
31
31
mA
IDD6A: Auto self refresh current, 25°C
IDD6A: Auto self refresh current, 75°C
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
Table 153: IDD, IPP, and IDDQ Current Limits – Rev. E (0°C ≤ TC ≤ 125°C) (Continued)
Symbol
Width
IDD6A: Auto self refresh current, 95°C 4
IPP6x: Auto self refresh
current23
IDD7: Bank interleave read current
IPP7: Bank interleave read IPP current
IDD8: Maximum power-down current
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
DDR4-2400
DDR4-2666
DDR4-3200
ALL
Unit
mA
ALL
7
7
7
mA
x8
185
190
200
mA
x16
253
262
280
mA
x8
13
13
13
mA
x16
18
18
18
mA
ALL
22
22
22
mA
1. Applicable for MR2 settings A7 = 0 and A6 = 0; Manual mode with normal temperature
range of operation (–40–85°C).
2. Applicable for MR2 settings A7 = 1 and A6 = 0; Manual mode with extended temperature range of operation (–40–125°C).
3. Applicable for MR2 settings A7 = 0 and A6 = 1; Manual mode with reduced temperature
range of operation (–40–45°C).
4. IDD6E, DD6R, and IDD6A values are verified by design and characterization, and may not be
subject to production test.
5. When additive latency is enabled for IDD0, current changes by approximately 1%.
6. When additive latency is enabled for IDD1, current changes by approximately +8% (x8),
+7% (x16).
7. When additive latency is enabled for IDD2N, current changes by approximately +1%.
8. When DLL is disabled for IDD2N, current changes by approximately –6%.
9. When CAL is enabled for IDD2N, current changes by approximately –30%.
10. When gear-down is enabled for IDD2N, current changes by approximately 0%.
11. When CA parity is enabled for IDD2N, current changes by approximately +10%.
12. When additive latency is enabled for IDD3N, current changes by approximately +1%.
13. When additive latency is enabled for IDD4R, current changes by approximately +4%.
14. When read DBI is enabled for IDD4R, current changes by approximately –14%.
15. When additive latency is enabled for IDD4W, current changes by approximately +3% (x8),
+4% (x16).
16. When write DBI is enabled for IDD4W, current changes by approximately –20%.
17. When write CRC is enabled for IDD4W, current changes by approximately –5% (x8), –5%
(x16).
18. When CA parity is enabled for IDD4W, current changes by approximately +12% (x8),
+12% (x16).
19. When 2X REF is enabled for IDD5R, current changes by approximately 0%.
20. When 4X REF is enabled for IDD5R, current changes by approximately 0%.
21. When 2X REF is enabled for IPP5R, current changes by approximately 0%.
22. When 4X REF is enabled for IPP5R, current changes by approximately 0%.
23. IPP0 test and limit is applicable for IDD0 and IDD1 conditions.
24. IPP3N test and limit is applicable for all IDD2x, IDD3x, IDD4x, and IDD8 conditions; That is, testing IPP3N should satisfy the IPPs for the noted IDD tests.
25. IPP6x is applicable to IDD6N, IDD6E, IDD6R, and IDD6A conditions.
26. When TC < 0°C: IDD2P and IDD3P must be derated by 6%; IDD4R and IDD4W must be derated
by 4%; IDD6, IDD6E, and IDD7 must be derated by 11%.
341
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
Table 154: IDD, IPP, and IDDQ Current Limits; Die Rev. R (–40° ≤ TC ≤ 85°C)
Symbol
Width
DDR4-2133
DDR4-2400
DDR4-2666
DDR4-2933
DDR4-3200
Unit
IDD0: One bank ACTIVATE-toPRECHARGE current
x4
38
40
42
44
46
mA
x8
40
42
44
46
48
mA
x16
51
53
55
57
59
mA
IPP0: One bank ACTIVATE-toPRECHARGE IPP current
x4, x8
4
4
4
4
4
mA
x16
5
5
5
5
5
mA
IDD1: One bank ACTIVATE-toREAD-to- PRECHARGE current
x4
43
45
47
49
51
mA
x8
47
49
51
53
55
mA
x16
61
63
65
67
69
mA
IDD2N: Precharge standby
current
ALL
34
35
36
37
38
mA
IDD2NT: Precharge standby
ODT current
x4, x8
33
35
37
39
41
mA
x16
38
40
42
44
46
mA
IDD2P: Precharge powerdown current
ALL
30
30
30
30
30
mA
IDD2Q: Precharge quiet standby current
ALL
34
34
34
34
34
mA
IDD3N: Active standby current
x4
34
36
38
40
42
mA
x8
35
37
39
41
43
mA
IPP3N: Active standby IPP current
IDD3P: Active power-down
current
IDD4R: Burst read current
IDD4W: Burst write current
x16
36
38
40
42
44
mA
ALL
3
3
3
3
3
mA
x4
28
29
30
31
32
mA
x8
29
30
31
32
33
mA
x16
30
31
32
33
34
mA
x4
74
80
88
95
103
mA
x8
92
98
105
113
123
mA
x16
130
139
151
164
176
mA
x4
62
66
70
76
82
mA
x8
79
85
91
98
106
mA
x16
102
109
119
127
138
mA
IDD5R: Distributed refresh
current (1X REF)
ALL
44
45
45
46
47
mA
IPP5R: Distributed refresh IPP
current (1X REF)
ALL
5
5
5
5
5
mA
IDD6N: Self refresh current; –
40–85°C on page
ALL
32
32
32
32
32
mA
IDD6E: Self refresh current; –
40–95°C on page , on page
ALL
52
52
52
52
52
mA
IDD6R: Self refresh current; –
40–45°C on page , on page
ALL
19
19
19
19
19
mA
CCMTD-1406124318-10419
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
Table 154: IDD, IPP, and IDDQ Current Limits; Die Rev. R (–40° ≤ TC ≤ 85°C) (Continued)
Width
DDR4-2133
DDR4-2400
DDR4-2666
DDR4-2933
DDR4-3200
Unit
IDD6A: Auto self refresh current (25°C) on page
Symbol
ALL
8
8
8
8
8
mA
IDD6A: Auto self refresh current (45°C) on page
ALL
19
19
19
19
19
mA
IDD6A: Auto self refresh current (75°C) on page
ALL
29
29
29
29
29
mA
IDD6A: Auto self refresh current (95°C) on page
ALL
52
52
52
52
52
mA
IPP6x: Auto self refresh IPP
current; –40–95°C on page
ALL
5
5
5
5
5
mA
IDD7: Bank interleave read
current
x4
154
169
186
200
215
mA
x8
135
140
145
150
155
mA
x16
165
179
196
210
225
mA
x4
13
13
13
13
13
mA
x8
8
8
8
8
8
mA
x16
13
13
13
13
13
mA
IDD8: Maximum power-down
current
ALL
24
24
24
24
24
mA
IDD9: Maximum power-down
current
ALL
TBD
TBD
TBD
TBD
TBD
mA
IPP9: Maximum power-down
IPP current
ALL
TBD
TBD
TBD
TBD
TBD
mA
IPP7: Bank interleave read IPP
current
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1. Applicable for MR2 settings A7 = 0 and A6 = 0; Manual mode with normal temperature
range of operation (–40–85°C).
2. Applicable for MR2 settings A7 = 1 and A6 = 0; Manual mode with extended temperature range of operation (–40–95°C).
3. Applicable for MR2 settings A7 = 0 and A6 = 1; Manual mode with reduced temperature
range of operation (–40–45°C).
4. IDD6E, IDD6R, and IDD6A values are verified by design and characterization, and may not be
subject to production test.
5. When additive latency is enabled for IDD0, current changes by approximately +1%.
6. When additive latency is enabled for IDD1, current changes by approximately +5%.
7. When additive latency is enabled for IDD2N, current changes by approximately 2%.
8. When DLL is disabled for IDD2N, current changes by approximately +19%.
9. When CAL is enabled for IDD2N, current changes by approximately –20%.
10. When gear-down is enabled for IDD2N, current changes by approximately +2%.
11. When CA parity is enabled for IDD2N, current changes by approximately +10%.
12. When additive latency is enabled for IDD3N, current changes by approximately –2%.
13. When additive latency is enabled for IDD4R, current changes by approximately +4%.
14. When read DBI is enabled for IDD4R, current changes by approximately –14%
15. When additive latency is enabled for IDD4W, current changes by approximately +6%.
16. When write DBI is enabled for IDD4W, current changes by approximately +1%.
17. When write CRC is enabled for IDD4W, current changes by approximately –5%.
343
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8Gb: x8, x16 Automotive DDR4 SDRAM
Current Specifications – Limits
18.
19.
20.
21.
22.
23.
24.
When CA parity is enabled for IDD4W, current changes by approximately +14%.
When 2X REF is enabled for IDD5R, current changes by approximately 0%.
When 4X REF is enabled for IDD5R, current changes by approximately 0%.
When 2X REF is enabled for IPP5R, current changes by approximately 0%.
When 4X REF is enabled for IPP5R, current changes by approximately 0%.
IPP0 test and limit is applicable for IDD0 and IDD1 conditions.
IPP3N test and limit is applicable for all IDD2x, IDD3x, IDD4x, and IDD8 conditions; That is, testing IPP3N should satisfy the IPPs for the noted IDD tests.
25. DDR4-1600 and DDR4-1866 use the same IDD limits as DDR4-2133.
26. The IDD values must be derated (increased) when operating between 85°C < TC ≤ 95°C:
IDD0, IDD1, IDD2N ,IDD2P,IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, and IDD4W, must be derated by
+10%. IDD5R and IPP5R must be derated by +43%; IPP0 must be derated by +13%. IPP3N
must be derated by +22%. IPP7 must be derated by +3%. These values are verified by design and characterization, and may not be subject to production test.
27. IPP6x is applicable to IDD6N, IDD6E, IDD6R, and IDD6A conditions.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
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8Gb: x8, x16 Automotive DDR4 SDRAM
Speed Bin Tables
Speed Bin Tables
DDR4 DRAM timing is primarily covered by two types of tables: the Speed Bin tables in
this section and the tables found in the Electrical Characteristics and AC Timing Parameters section. The timing parameter tables define the applicable timing specifications
based on the speed rating. The Speed Bin tables on the following pages list the tAA,
tRCD, tRP, tRAS, and tRC limits of a given speed mark and are applicable to the CL settings in the lower half of the table provided they are applied in the correct clock range,
which is noted.
Backward Compatibility
Although the speed bin tables list the slower data rates, tAA, CL, and CWL, it is difficult
to determine whether a faster speed bin supports all of the tAA, CL, and CWL combinations across all the data rates of a slower speed bin. To assist in this process, please refer
to the Backward Compatibility table.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
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Note 1 applies to the entire table.
Component
Speed Bin
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Table 155: Backward Compatibility
Speed Bin Supported
-125
-125
yes
-125E
yes2
-125E
-107
-107E
-093
-093E -083D
-083
-083E -075D
-075
-075E -068D
-068
-068E
-062
-062E -062Y
yes
-107
yes
-107E
yes2
yes
-093
yes
yes
-093E
yes2
yes2
-083D
yes
yes
yes
yes2
yes
yes
yes
yes
yes2
yes
yes
yes
yes
346
yes
-083E
yes2
-075D
yes
-075
yes
-075E
yes
-068D
yes
yes
yes
yes
-068
yes
yes
yes
yes
yes
yes
yes
yes
yes
-068E
yes
yes
yes
yes
yes
yes
yes
yes
yes
-062
yes
yes
yes
yes
-062E
yes
yes
yes
yes
yes
-062Y
yes
yes
yes
yes
yes2
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes2
yes
yes
yes
yes
yes2
yes
yes
yes
yes
yes
yes2
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
yes
8Gb: x8, x16 Automotive DDR4 SDRAM
Speed Bin Tables
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
-083
8Gb: x8, x16 Automotive DDR4 SDRAM
Speed Bin Tables
Notes:
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
1. The backward compatibility table is not meant to guarantee that any new device will be
a drop in replacement for an existing part number. Customers should review the operating conditions for any device to determine its suitability for use in their design.
2. This condition exceeds the JEDEC requirement in order to allow additional flexibility for
components. However, JEDEC SPD compliance may force modules to only support the JEDEC-defined value. Refer to the SPD documentation for further clarification.
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CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. J 02/2021 EN
Table 156: DDR4-1600 Speed Bins and Operating Conditions
Notes 1–3 apply to the entire table
DDR4-1600 Speed Bin
-125E
CL-nRCD-nRP
-125
11-11-11
Parameter
Symbol
Internal READ command to first data
Internal READ command to first data with read DBI enabled
ACTIVATE-to-internal READ or WRITE delay time
PRECHARGE command period
12-12-12
Min
Max
Min
tAA
Max
Unit
13.75
(13.50)4
19.006
15.00
19.006
ns
tAA_DBI
tAA
tAA
tAA
tAA
ns
(MIN) +
2nCK
(MAX) +
2nCK
(MIN) +
2nCK
(MAX) +
2nCK
tRCD
13.75
(13.50)4
–
15.00
–
ns
tRP
13.75
(13.50)4
–
15.00
–
ns
9 × tREFI
35
9 × tREFI
ns
–
ns
Max
Unit
ACTIVATE-to-PRECHARGE command period
tRAS
35
ACTIVATE-to-ACTIVATE or REFRESH command period
tRC5
tRAS
+
–
tRP
348
Equivalent
Speed Bin
tAAmin(ns):
non-DB
READ CL:
nonDBI
READ
CL: DBI
WRITE
CWL
1333
-
13.50
9
11
9
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2016 Micron Technology, Inc. All rights reserved.
1600
15.00
10
Max
(AVG)
1.500
1.9006
1.9006
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