MT41J64M16JT-125:G

1Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration – 256 Meg x 4 – 128 Meg x 8 – 64 Meg x 16 • FBGA package (Pb-free) – x4, x8 – 78-ball (8mm x 11.5mm) Rev. G – 78-ball (8mm x 10.5mm) Rev. J • FBGA package (Pb-free) – x16 – 96-ball (8mm x 14mm) Rev. G – 96-ball (8mm x 14mm) Rev. J • Timing – cycle time – 938ps @ CL = 14 (DDR3-2133) – 1.07ns @ CL = 13 (DDR3-1866) – 1.25ns @ CL = 11 (DDR3-1600) – 1.5ns @ CL = 9 (DDR3-1333) – 1.87ns @ CL = 7 (DDR3-1066) • Operating temperature – Commercial (0°C ≤ T C ≤ +95°C) – Industrial (–40°C ≤ T C ≤ +95°C) • Revision VDD = V DDQ = 1.5V ±0.075V 1.5V center-terminated push/pull I/O Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) POSTED CAS ADDITIVE latency (AL) Programmable CAS WRITE latency (CWL) based on tCK Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) Selectable BC4 or BL8 on-the-fly (OTF) Self refresh mode TC of 0°C to 95°C – 64ms, 8192 cycle refresh at 0°C to 85°C – 32ms, 8192 cycle refresh at 85°C to 95°C Self refresh temperature (SRT) Automatic self refresh (ASR) Write leveling Multipurpose register Output driver calibration Note: 256M4 128M8 64M16 JP DA JT TW -093 -107 -125 -15E -187E None IT :G / :J 1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL -0931, 2, 3, 4 2133 14-14-14 13.09 13.09 13.09 -1071, 2, 3 1866 13-13-13 13.91 13.91 13.91 1, 2 tRCD (ns) tRP (ns) CL (ns) 1600 11-11-11 13.75 13.75 13.75 -15E 1 1333 9-9-9 13.5 13.5 13.5 -187E 1066 7-7-7 13.1 13.1 13.1 -125 Notes: 1. 2. 3. 4. Backward compatible to 1066, CL = 7 (-187E). Backward compatible to 1333, CL = 9 (-15E). Backward compatible to 1600, CL = 11 (-125). Backward compatible to 1866, CL = 13 (-107). PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 1Gb: x4, x8, x16 DDR3 SDRAM Features Table 2: Addressing Parameter Configuration 256 Meg x 4 128 Meg x 8 64 Meg x 16 32 Meg x 4 x 8 banks 16 Meg x 8 x 8 banks 8 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row addressing 16K (A[13:0]) 16K (A[13:0]) 8K (A[12:0]) Bank addressing 8 (BA[2:0]) 8 (BA[2:0]) 8 (BA[2:0]) 2K (A[11, 9:0]) 1K (A[9:0]) 1K (A[9:0]) 1KB 1KB 2KB Column addressing Page Size Figure 1: DDR3 Part Numbers Example Part Number: MT41J256M4DA-107:J Configuration Package Speed Revision { MT41J : :G / :J Revision Temperature Configuration 256 Meg x 4 256M4 Commercial 128 Meg x 8 128M8 Industrial temperature 64 Meg x 16 64M16 Package Note: Rev. Mark -093 Speed Grade tCK = 0.098ns, CL = 14 78-ball 8mm x 11.5mm FBGA G JP -107 tCK = 1.07ns, CL = 13 78-ball 8mm x 10.5mm FBGA J DA -125 tCK = 1.25ns, CL = 11 96-ball 8mm x 14mm FBGA G JT -15E 96-ball 8mm x 14mm FBGA J TW -187E tCK = 1.5ns, CL = 9 tCK = 1.87ns, CL = 7 None IT 1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Features Contents State Diagram ................................................................................................................................................ 11 Functional Description ................................................................................................................................... 12 Industrial Temperature ............................................................................................................................... 12 General Notes ............................................................................................................................................ 12 Functional Block Diagrams ............................................................................................................................. 14 Ball Assignments and Descriptions ................................................................................................................. 16 Package Dimensions ....................................................................................................................................... 22 Electrical Specifications .................................................................................................................................. 26 Absolute Ratings ......................................................................................................................................... 26 Input/Output Capacitance .......................................................................................................................... 27 Thermal Characteristics .................................................................................................................................. 28 Electrical Specifications – I DD Specifications and Conditions ........................................................................... 30 Electrical Characteristics – IDD Specifications .................................................................................................. 41 Electrical Specifications – DC and AC .............................................................................................................. 44 DC Operating Conditions ........................................................................................................................... 44 Input Operating Conditions ........................................................................................................................ 44 AC Overshoot/Undershoot Specification ..................................................................................................... 48 Slew Rate Definitions for Single-Ended Input Signals ................................................................................... 51 Slew Rate Definitions for Differential Input Signals ...................................................................................... 53 ODT Characteristics ....................................................................................................................................... 54 ODT Resistors ............................................................................................................................................ 55 ODT Sensitivity .......................................................................................................................................... 56 ODT Timing Definitions ............................................................................................................................. 56 Output Driver Impedance ............................................................................................................................... 60 34 Ohm Output Driver Impedance .............................................................................................................. 61 34 Ohm Driver ............................................................................................................................................ 62 34 Ohm Output Driver Sensitivity ................................................................................................................ 63 Alternative 40 Ohm Driver .......................................................................................................................... 64 40 Ohm Output Driver Sensitivity ................................................................................................................ 64 Output Characteristics and Operating Conditions ............................................................................................ 66 Reference Output Load ............................................................................................................................... 68 Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 69 Slew Rate Definitions for Differential Output Signals .................................................................................... 70 Speed Bin Tables ............................................................................................................................................ 71 Electrical Characteristics and AC Operating Conditions ................................................................................... 76 Command and Address Setup, Hold, and Derating ........................................................................................... 96 Data Setup, Hold, and Derating ...................................................................................................................... 104 Commands – Truth Tables ............................................................................................................................. 113 Commands ................................................................................................................................................... 116 DESELECT ................................................................................................................................................ 116 NO OPERATION ........................................................................................................................................ 116 ZQ CALIBRATION LONG ........................................................................................................................... 116 ZQ CALIBRATION SHORT .......................................................................................................................... 116 ACTIVATE ................................................................................................................................................. 116 READ ........................................................................................................................................................ 116 WRITE ...................................................................................................................................................... 117 PRECHARGE ............................................................................................................................................. 118 REFRESH .................................................................................................................................................. 118 SELF REFRESH .......................................................................................................................................... 119 DLL Disable Mode ..................................................................................................................................... 120 PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Features Input Clock Frequency Change ...................................................................................................................... 124 Write Leveling ............................................................................................................................................... 126 Write Leveling Procedure ........................................................................................................................... 128 Write Leveling Mode Exit Procedure ........................................................................................................... 130 Initialization ................................................................................................................................................. 131 Mode Registers .............................................................................................................................................. 133 Mode Register 0 (MR0) ................................................................................................................................... 134 Burst Length ............................................................................................................................................. 134 Burst Type ................................................................................................................................................. 135 DLL RESET ................................................................................................................................................ 136 Write Recovery .......................................................................................................................................... 136 Precharge Power-Down (Precharge PD) ...................................................................................................... 137 CAS Latency (CL) ....................................................................................................................................... 137 Mode Register 1 (MR1) ................................................................................................................................... 138 DLL Enable/DLL Disable ........................................................................................................................... 138 Output Drive Strength ............................................................................................................................... 139 OUTPUT ENABLE/DISABLE ...................................................................................................................... 139 TDQS Enable ............................................................................................................................................. 139 On-Die Termination .................................................................................................................................. 140 WRITE LEVELING ..................................................................................................................................... 140 POSTED CAS ADDITIVE Latency ................................................................................................................ 140 Mode Register 2 (MR2) ................................................................................................................................... 141 CAS Write Latency (CWL) ........................................................................................................................... 142 AUTO SELF REFRESH (ASR) ....................................................................................................................... 142 SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 143 SRT vs. ASR ............................................................................................................................................... 143 DYNAMIC ODT ......................................................................................................................................... 143 Mode Register 3 (MR3) ................................................................................................................................... 144 MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 144 MPR Functional Description ...................................................................................................................... 145 MPR Register Address Definitions and Bursting Order ................................................................................. 146 MPR Read Predefined Pattern .................................................................................................................... 152 MODE REGISTER SET (MRS) Command ........................................................................................................ 152 ZQ CALIBRATION Operation ......................................................................................................................... 153 ACTIVATE Operation ..................................................................................................................................... 154 READ Operation ............................................................................................................................................ 156 WRITE Operation .......................................................................................................................................... 167 DQ Input Timing ....................................................................................................................................... 175 PRECHARGE Operation ................................................................................................................................. 177 SELF REFRESH Operation .............................................................................................................................. 177 Extended Temperature Usage ........................................................................................................................ 179 Power-Down Mode ........................................................................................................................................ 180 RESET Operation ........................................................................................................................................... 188 On-Die Termination (ODT) ............................................................................................................................ 190 Functional Representation of ODT ............................................................................................................. 190 Nominal ODT ............................................................................................................................................ 190 Dynamic ODT ............................................................................................................................................... 192 Dynamic ODT Special Use Case ................................................................................................................. 192 Functional Description .............................................................................................................................. 192 Synchronous ODT Mode ................................................................................................................................ 198 ODT Latency and Posted ODT .................................................................................................................... 198 Timing Parameters .................................................................................................................................... 198 PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Features ODT Off During READs .............................................................................................................................. 201 Asynchronous ODT Mode .............................................................................................................................. 203 Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 205 Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 207 Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 209 PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Features List of Tables Table 1: Key Timing Parameters ....................................................................................................................... 1 Table 2: Addressing ......................................................................................................................................... 2 Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions .............................................................................................. 18 Table 4: 96-Ball FBGA – x16 Ball Descriptions ................................................................................................. 20 Table 5: Absolute Maximum Ratings .............................................................................................................. 26 Table 6: DDR3 Input/Output Capacitance ...................................................................................................... 27 Table 7: Thermal Characteristics .................................................................................................................... 28 Table 8: Timing Parameters Used for I DD Measurements – Clock Units ............................................................ 30 Table 9: IDD0 Measurement Loop ................................................................................................................... 31 Table 10: IDD1 Measurement Loop .................................................................................................................. 32 Table 11: IDD Measurement Conditions for Power-Down Currents ................................................................... 33 Table 12: IDD2N and IDD3N Measurement Loop ................................................................................................ 34 Table 13: IDD2NT Measurement Loop .............................................................................................................. 34 Table 14: IDD4R Measurement Loop ................................................................................................................ 35 Table 15: IDD4W Measurement Loop ............................................................................................................... 36 Table 16: IDD5B Measurement Loop ................................................................................................................ 37 Table 17: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 .................................................................... 38 Table 18: IDD7 Measurement Loop .................................................................................................................. 39 Table 19: IDD Maximum Limits – Rev. G .......................................................................................................... 41 Table 20: IDD Maximum Limits – Rev. J ........................................................................................................... 42 Table 21: DC Electrical Characteristics and Operating Conditions ................................................................... 44 Table 22: DC Electrical Characteristics and Input Conditions .......................................................................... 44 Table 23: Input Switching Conditions ............................................................................................................. 45 Table 24: Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .................................................. 46 Table 25: Control and Address Pins ................................................................................................................ 48 Table 26: Clock, Data, Strobe, and Mask Pins .................................................................................................. 48 Table 27: Allowed Time Before Ringback ( tDVAC) for CK - CK# and DQS - DQS# ............................................... 50 Table 28: Single-Ended Input Slew Rate Definition .......................................................................................... 51 Table 29: Differential Input Slew Rate Definition ............................................................................................. 53 Table 30: On-Die Termination DC Electrical Characteristics ............................................................................ 54 Table 31: RTT Effective Impedances ................................................................................................................ 55 Table 32: ODT Sensitivity Definition .............................................................................................................. 56 Table 33: ODT Temperature and Voltage Sensitivity ........................................................................................ 56 Table 34: ODT Timing Definitions .................................................................................................................. 57 Table 35: Reference Settings for ODT Timing Measurements ........................................................................... 57 Table 36: 34 Ohm Driver Impedance Characteristics ....................................................................................... 61 Table 37: 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations ....................................................... 62 Table 38: 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = 1.5V ................................................................ 62 Table 39: 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = 1.575V ............................................................. 62 Table 40: 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = 1.425V ............................................................. 63 Table 41: 34 Ohm Output Driver Sensitivity Definition .................................................................................... 63 Table 42: 34 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 63 Table 43: 40 Ohm Driver Impedance Characteristics ....................................................................................... 64 Table 44: 40 Ohm Output Driver Sensitivity Definition .................................................................................... 64 Table 45: 40 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 65 Table 46: Single-Ended Output Driver Characteristics ..................................................................................... 66 Table 47: Differential Output Driver Characteristics ........................................................................................ 67 Table 48: Single-Ended Output Slew Rate Definition ....................................................................................... 69 Table 49: Differential Output Slew Rate Definition .......................................................................................... 70 Table 50: DDR3-1066 Speed Bins ................................................................................................................... 71 PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Features Table 51: Table 52: Table 53: Table 54: Table 55: Table 56: Table 57: Table 58: Table 59: Table 60: Table 61: Table 62: Table 63: Table 64: Table 65: Table 66: Table 67: Table 68: Table 69: Table 70: Table 71: Table 72: Table 73: Table 74: Table 75: Table 76: Table 77: Table 78: Table 79: Table 80: Table 81: Table 82: Table 83: Table 84: Table 85: Table 86: Table 87: Table 88: Table 89: Table 90: Table 91: DDR3-1333 Speed Bins ................................................................................................................... 72 DDR3-1600 Speed Bins ................................................................................................................... 73 DDR3-1866 Speed Bins ................................................................................................................... 74 DDR3-2133 Speed Bins ................................................................................................................... 75 Electrical Characteristics and AC Operating Conditions .................................................................... 76 Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 86 Command and Address Setup and Hold Values Referenced – AC/DC-Based ...................................... 96 Derating Values for tIS/tIH – AC175/DC100-Based ............................................................................ 97 Derating Values for tIS/tIH – AC150/DC100-Based ............................................................................ 97 Derating Values for tIS/tIH – AC135/DC100-Based ............................................................................ 98 Derating Values for tIS/tIH – AC125/DC100-Based ............................................................................ 98 Minimum Required Time tVAC Above V IH(AC) or Below V IL(AC)for Valid Transition ............................... 99 DDR3 Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based ......................... 104 Derating Values for tDS/tDH – AC175/DC100-Based ........................................................................ 105 Derating Values for tDS/tDH – AC150/DC100-Based ........................................................................ 105 Derating Values for tDS/tDH – AC135/DC100-Based at 1V/ns ........................................................... 106 Derating Values for tDS/tDH – AC135/DC100-Based at 2V/ns ........................................................... 107 Required Minimum Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition ......................... 108 Truth Table – Command ................................................................................................................. 113 Truth Table – CKE .......................................................................................................................... 115 READ Command Summary ............................................................................................................ 117 WRITE Command Summary .......................................................................................................... 117 READ Electrical Characteristics, DLL Disable Mode ......................................................................... 123 Write Leveling Matrix ..................................................................................................................... 127 Burst Order .................................................................................................................................... 136 MPR Functional Description of MR3 Bits ........................................................................................ 145 MPR Readouts and Burst Order Bit Mapping ................................................................................... 146 Self Refresh Temperature and Auto Self Refresh Description ............................................................ 179 Self Refresh Mode Summary ........................................................................................................... 179 Command to Power-Down Entry Parameters .................................................................................. 180 Power-Down Modes ....................................................................................................................... 181 Truth Table – ODT (Nominal) ......................................................................................................... 191 ODT Parameters ............................................................................................................................ 191 Write Leveling with Dynamic ODT Special Case .............................................................................. 192 Dynamic ODT Specific Parameters ................................................................................................. 193 Mode Registers for RTT,nom ............................................................................................................. 193 Mode Registers for RTT(WR) ............................................................................................................. 194 Timing Diagrams for Dynamic ODT ................................................................................................ 194 Synchronous ODT Parameters ........................................................................................................ 199 Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 204 ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................... 206 PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Features List of Figures Figure 1: DDR3 Part Numbers .......................................................................................................................... 2 Figure 2: Simplified State Diagram ................................................................................................................. 11 Figure 3: 256 Meg x 4 Functional Block Diagram ............................................................................................. 14 Figure 4: 128 Meg x 8 Functional Block Diagram ............................................................................................. 15 Figure 5: 64 Meg x 16 Functional Block Diagram ............................................................................................. 15 Figure 6: 78-Ball FBGA – x4, x8 (Top View) ...................................................................................................... 16 Figure 7: 96-Ball FBGA – x16 (Top View) ......................................................................................................... 17 Figure 8: 78-Ball FBGA – x4, x8 (JP) ................................................................................................................ 22 Figure 9: 78-Ball FBGA – x4, x8 (DA) ............................................................................................................... 23 Figure 10: 96-Ball FBGA – x16 (JT) .................................................................................................................. 24 Figure 11: 96-Ball FBGA – x16 (TW) ................................................................................................................ 25 Figure 12: Thermal Measurement Point ......................................................................................................... 29 Figure 13: Input Signal .................................................................................................................................. 47 Figure 14: Overshoot ..................................................................................................................................... 48 Figure 15: Undershoot ................................................................................................................................... 48 Figure 16: V IX for Differential Signals .............................................................................................................. 49 Figure 17: Single-Ended Requirements for Differential Signals ........................................................................ 49 Figure 18: Definition of Differential AC-Swing and tDVAC ............................................................................... 50 Figure 19: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 52 Figure 20: Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# .................................. 53 Figure 21: ODT Levels and I-V Characteristics ................................................................................................ 54 Figure 22: ODT Timing Reference Load .......................................................................................................... 57 Figure 23: tAON and tAOF Definitions ............................................................................................................ 58 Figure 24: tAONPD and tAOFPD Definitions ................................................................................................... 58 Figure 25: tADC Definition ............................................................................................................................. 59 Figure 26: Output Driver ................................................................................................................................ 60 Figure 27: DQ Output Signal .......................................................................................................................... 67 Figure 28: Differential Output Signal .............................................................................................................. 68 Figure 29: Reference Output Load for AC Timing and Output Slew Rate ........................................................... 68 Figure 30: Nominal Slew Rate Definition for Single-Ended Output Signals ....................................................... 69 Figure 31: Nominal Differential Output Slew Rate Definition for DQS, DQS# .................................................... 70 Figure 32: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock) ............................................. 100 Figure 33: Nominal Slew Rate for tIH (Command and Address – Clock) ........................................................... 101 Figure 34: Tangent Line for tIS (Command and Address – Clock) .................................................................... 102 Figure 35: Tangent Line for tIH (Command and Address – Clock) .................................................................... 103 Figure 36: Nominal Slew Rate and tVAC for tDS (DQ – Strobe) ......................................................................... 109 Figure 37: Nominal Slew Rate for tDH (DQ – Strobe) ...................................................................................... 110 Figure 38: Tangent Line for tDS (DQ – Strobe) ................................................................................................ 111 Figure 39: Tangent Line for tDH (DQ – Strobe) ............................................................................................... 112 Figure 40: Refresh Mode ............................................................................................................................... 119 Figure 41: DLL Enable Mode to DLL Disable Mode ........................................................................................ 121 Figure 42: DLL Disable Mode to DLL Enable Mode ........................................................................................ 122 Figure 43: DLL Disable tDQSCK .................................................................................................................... 123 Figure 44: Change Frequency During Precharge Power-Down ........................................................................ 125 Figure 45: Write Leveling Concept ................................................................................................................. 126 Figure 46: Write Leveling Sequence ............................................................................................................... 129 Figure 47: Write Leveling Exit Procedure ....................................................................................................... 130 Figure 48: Initialization Sequence ................................................................................................................. 132 Figure 49: MRS to MRS Command Timing ( tMRD) ......................................................................................... 133 Figure 50: MRS to nonMRS Command Timing ( tMOD) .................................................................................. 134 PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Features Figure 51: Mode Register 0 (MR0) Definitions ................................................................................................ 135 Figure 52: READ Latency .............................................................................................................................. 137 Figure 53: Mode Register 1 (MR1) Definition ................................................................................................. 138 Figure 54: READ Latency (AL = 5, CL = 6) ....................................................................................................... 141 Figure 55: Mode Register 2 (MR2) Definition ................................................................................................. 142 Figure 56: CAS Write Latency ........................................................................................................................ 142 Figure 57: Mode Register 3 (MR3) Definition ................................................................................................. 144 Figure 58: Multipurpose Register (MPR) Block Diagram ................................................................................. 145 Figure 59: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 148 Figure 60: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 149 Figure 61: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 150 Figure 62: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 151 Figure 63: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 153 Figure 64: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 154 Figure 65: Example: tFAW ............................................................................................................................. 155 Figure 66: READ Latency .............................................................................................................................. 156 Figure 67: Consecutive READ Bursts (BL8) .................................................................................................... 158 Figure 68: Consecutive READ Bursts (BC4) .................................................................................................... 158 Figure 69: Nonconsecutive READ Bursts ....................................................................................................... 159 Figure 70: READ (BL8) to WRITE (BL8) .......................................................................................................... 159 Figure 71: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 160 Figure 72: READ to PRECHARGE (BL8) .......................................................................................................... 160 Figure 73: READ to PRECHARGE (BC4) ......................................................................................................... 161 Figure 74: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 161 Figure 75: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 161 Figure 76: Data Output Timing – tDQSQ and Data Valid Window .................................................................... 163 Figure 77: Data Strobe Timing – READs ......................................................................................................... 164 Figure 78: Method for Calculating tLZ and tHZ ............................................................................................... 165 Figure 79: tRPRE Timing ............................................................................................................................... 165 Figure 80: tRPST Timing ............................................................................................................................... 166 Figure 81: tWPRE Timing .............................................................................................................................. 168 Figure 82: tWPST Timing .............................................................................................................................. 168 Figure 83: WRITE Burst ................................................................................................................................ 169 Figure 84: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 170 Figure 85: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 170 Figure 86: Nonconsecutive WRITE to WRITE ................................................................................................. 171 Figure 87: WRITE (BL8) to READ (BL8) .......................................................................................................... 171 Figure 88: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 172 Figure 89: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 173 Figure 90: WRITE (BL8) to PRECHARGE ........................................................................................................ 174 Figure 91: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 174 Figure 92: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 175 Figure 93: Data Input Timing ........................................................................................................................ 176 Figure 94: Self Refresh Entry/Exit Timing ...................................................................................................... 178 Figure 95: Active Power-Down Entry and Exit ................................................................................................ 182 Figure 96: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 182 Figure 97: Precharge Power-Down (Slow-Exit Mode) Entry and Exit ................................................................ 183 Figure 98: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ............................................. 183 Figure 99: Power-Down Entry After WRITE .................................................................................................... 184 Figure 100: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 184 Figure 101: REFRESH to Power-Down Entry .................................................................................................. 185 Figure 102: ACTIVATE to Power-Down Entry ................................................................................................. 185 PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Features Figure 103: Figure 104: Figure 105: Figure 106: Figure 107: Figure 108: Figure 109: Figure 110: Figure 111: Figure 112: Figure 113: Figure 114: Figure 115: Figure 116: Figure 117: Figure 118: Figure 119: Figure 120: PRECHARGE to Power-Down Entry ............................................................................................. 186 MRS Command to Power-Down Entry ......................................................................................... 186 Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 187 RESET Sequence ......................................................................................................................... 189 On-Die Termination ................................................................................................................... 190 Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 195 Dynamic ODT: Without WRITE Command .................................................................................. 195 Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 196 Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 197 Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 197 Synchronous ODT ...................................................................................................................... 199 Synchronous ODT (BC4) ............................................................................................................. 200 ODT During READs .................................................................................................................... 202 Asynchronous ODT Timing with Fast ODT Transition .................................................................. 204 Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 206 Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 208 Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 210 Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 210 PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM State Diagram State Diagram Figure 2: Simplified State Diagram CKE L Power applied MRS, MPR, write leveling Initialization Reset procedure Power on Self refresh SRE ZQCL From any state RESET ZQ calibration MRS SRX REF ZQCL/ZQCS Refreshing Idle PDE ACT PDX Active powerdown Precharge powerdown Activating PDX CKE L CKE L PDE Bank active WRITE WRITE READ WRITE AP Writing READ READ AP READ WRITE WRITE AP Reading READ AP WRITE AP READ AP PRE, PREA Writing PRE, PREA PRE, PREA Reading Precharging Automatic sequence Command sequence ACT = ACTIVATE MPR = Multipurpose register MRS = Mode register set PDE = Power-down entry PDX = Power-down exit PRE = PRECHARGE PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN PREA = PRECHARGE ALL READ = RD, RDS4, RDS8 READ AP = RDAP, RDAPS4, RDAPS8 REF = REFRESH RESET = START RESET PROCEDURE SRE = Self refresh entry 11 SRX = Self refresh exit WRITE = WR, WRS4, WRS8 WRITE AP = WRAP, WRAPS4, WRAPS8 ZQCL = ZQ LONG CALIBRATION ZQCS = ZQ SHORT CALIBRATION Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Functional Description Functional Description DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins. The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes. The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ preamble. Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE commands are used to select the bank and the starting column location for the burst access. The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM allows for concurrent operation, thereby providing high bandwidth by hiding row precharge and activation time. A self refresh mode is provided, along with a power-saving, power-down mode. Industrial Temperature The industrial temperature (IT) device requires that the case temperature not exceed –40°C or 95°C. JEDEC specifications require the refresh rate to double when T C exceeds 85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when T C is < 0°C or >95°C. General Notes • The functionality and the timing specifications discussed in this data sheet are for the DLL enable mode of operation (normal operation). • Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ is to be interpreted as any and all DQ collectively, unless specifically stated otherwise. • The terms “DQS” and “CK” found throughout this data sheet are to be interpreted as DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise. PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Functional Description • Complete functionality may be described throughout the document; any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. • Any specific requirement takes precedence over a general statement. • Any functionality not specifically stated is considered undefined, illegal, and not supported, and can result in unknown operation. • Row addressing is denoted as A[n:0]. For example, 1Gb: n = 12 (x16); 1Gb: n = 13 (x4, x8); 2Gb: n = 13 (x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4, x8). • Dynamic ODT has a special use case: when DDR3 devices are architected for use in a single rank memory array, the ODT ball can be wired HIGH rather than routed. Refer to the Dynamic ODT Special Use Case section. • A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be used, use the lower byte for data transfers and terminate the upper byte as noted: – – – – Connect UDQS to ground via 1kΩ* resistor. Connect UDQS# to V DD via 1kΩ* resistor. Connect UDM to V DD via 1kΩ* resistor. Connect DQ[15:8] individually to either V SS, V DD, or V REF via 1kΩ resistors,* or float DQ[15:8]. *If ODT is used, 1kΩ resistor should be changed to 4x that of the selected ODT. PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Functional Block Diagrams Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Figure 3: 256 Meg x 4 Functional Block Diagram ODT control ODT ZQ RZQ ZQCL, ZQCS CKE VSSQ To pull-up/pull-down networks ZQ CAL RESET# Control logic A12 CK, CK# VDDQ/2 BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter 16 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 14 14 Bank 0 rowaddress latch and decoder 16,384 RTT(WR) CK, CK# sw2 sw1 DLL (1 . . . 4) 14 Rowaddress MUX RTT,nom Columns 0, 1, and 2 Bank 0 memory array (16,384 x 256 x 32) 32 READ FIFO and data MUX 4 DQ[3:0] READ drivers DQ[3:0] DQS, DQS# VDDQ/2 Sense amplifiers 32 BC4 RTT,nom 8,192 BC4 OTF I/O gating DM mask logic 3 A[13:0] BA[2:0] 17 Address register 3 sw1 (1, 2) Bank control logic Columnaddress counter/ latch DQS, DQS# VDDQ/2 32 Data interface Column decoder 4 Data WRITE drivers and input logic 8 RTT,nom sw1 RTT(WR) sw2 DM 3 Columns 0, 1, and 2 CK, CK# PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN sw2 DM 256 (x32) 11 RTT(WR) 14 Column 2 (select upper or lower nibble for BC4) Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Functional Block Diagrams Figure 4: 128 Meg x 8 Functional Block Diagram ODT control ODT ZQ RZQ Control logic CKE VSSQ To ODT/output drivers ZQ CAL RESET# ZQCL, ZQCS A12 CK, CK# VDDQ/2 BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 16 14 14 Bank 0 rowaddress 16,384 latch and decoder RTT(WR) CK, CK# sw2 sw1 DLL (1 . . . 8) 14 Rowaddress MUX RTT,nom Columns 0, 1, and 2 Bank 0 memory array (16,384 x 128 x 64) 64 DQ8 READ FIFO and data MUX 8 TDQS# DQ[7:0] READ drivers DQ[7:0] DQS, DQS# VDDQ/2 Sense amplifiers 64 BC4 8,192 17 Address register RTT(WR) sw2 sw1 I/O gating DM mask logic 3 A[13:0] BA[2:0] BC4 OTF RTT,nom (1, 2) Bank control logic 3 VDDQ/2 (128 x64) 64 Data interface Column decoder Columnaddress counter/ latch 10 DQS, DQS# 8 Data WRITE drivers and input logic RTT,nom RTT(WR) sw2 sw1 7 DM/TDQS (shared pin) 3 Columns 0, 1, and 2 CK, CK# Column 2 (select upper or lower nibble for BC4) Figure 5: 64 Meg x 16 Functional Block Diagram ODT control ODT ZQ RZQ ZQ CAL RESET# Control logic CKE VSSQ To ODT/output drivers ZQCL, ZQCS A12 VDDQ/2 CK, CK# BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter 16 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 13 13 Bank 0 rowaddress latch and decoder 8,192 DLL (1 . . . 16) Bank 0 memory array (8192 x 128 x 128) 128 READ FIFO and data MUX 16 DQ[15:0] READ drivers LDQS, LDQS#, UDQS, UDQS# Address register 3 sw2 LDQS, LDQS# Bank control logic (1 . . . 4) Columnaddress counter/ latch UDQS, UDQS# VDDQ/2 128 Data interface Column decoder 16 Data WRITE drivers and input logic RTT,nom sw1 RTT(WR) sw2 7 (1, 2) LDM/UDM 3 Columns 0, 1, and 2 CK, CK# PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN RTT(WR) I/O gating DM mask logic (128 x128) 10 RTT,nom sw1 BC4 OTF 3 DQ[15:0] VDDQ/2 BC4 128 16,384 16 sw2 sw1 Sense amplifiers A[12:0] BA[2:0] RTT(WR) CK, CK# 13 Rowaddress MUX RTT,nom Column 0, 1, and 2 15 Column 2 (select upper or lower nibble for BC4) Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Ball Assignments and Descriptions Figure 6: 78-Ball FBGA – x4, x8 (Top View) 1 2 3 VSS VDD VSS VDDQ 4 5 6 7 8 9 NC NF, NF/TDQS# VSS VDD VSSQ DQ0 DM, DM/TDQS VSSQ VDDQ DQ2 DQS DQ1 DQ3 VSSQ NF, DQ6 DQS# VDD VSS VSSQ A B C D VSSQ E VREFDQ NF, DQ7 NF, DQ5 VDDQ VDDQ NF, DQ4 F NC VSS RAS# CK VSS NC ODT VDD CAS# CK# VDD CKE NC CS# WE# A10/AP ZQ NC VSS BA0 BA2 NC VREFCA VSS VDD A3 A0 A12/BC# BA1 VDD VSS A5 A2 A1 A4 VSS VDD A7 A9 A11 A6 VDD VSS RESET# A13 NC A8 VSS G H J K L M N Notes: PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 1. Ball descriptions listed in Table 3 (page 18) are listed as “x4, x8” if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are defined in Table 3). 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Figure 7: 96-Ball FBGA – x16 (Top View) 1 2 3 VDDQ DQ13 VSSQ 4 5 6 7 8 9 DQ15 DQ12 VDDQ VSS VDD VSS UDQS# DQ14 VSSQ VDDQ DQ11 DQ9 UDQS DQ10 VDDQ VSSQ VDDQ UDM DQ8 VSSQ VDD VSS VSSQ DQ0 LDM VSSQ VDDQ VDDQ DQ2 LDQS DQ1 DQ3 VSSQ VSSQ DQ6 LDQS# VDD VSS VSSQ VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ NC VSS RAS# CK VSS NC ODT VDD CAS# CK# VDD CKE NC CS# WE# A10/AP ZQ NC VSS BA0 BA2 NC VREFCA VSS VDD A3 A0 A12/BC# BA1 VDD VSS A5 A2 A1 A4 VSS VDD A7 A9 A11 A6 VDD VSS RESET# NC NC A8 VSS A B C D E F G H J K L M N P R T Notes: PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 1. Ball descriptions listed in Table 4 (page 20) are listed as “x4, x8” if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are defined in Table 4). 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions Symbol Type Description A13, A12/BC#, A10/AP, A [9:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 69 (page 113). BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle), or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. DM Input Input data mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with the input data during a write access. Although the DM ball is input-only, the DM loading is designed to match that of the DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on the x8. ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#, and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDD and DC LOW ≤ 0.2 × VDDQ. RESET# assertion and desertion are asynchronous. DQ[0:3] I/O PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are referenced to VREFDQ. 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions (Continued) Symbol Type DQ[0:7] I/O Description Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are referenced to VREFDQ. DQS, DQS# I/O Data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. TDQS, TDQS# Output Termination data strobe: Applies to the x8 configuration only. When TDQS is enabled, DM is disabled, and the TDQS and TDQS# balls provide termination resistance. VDD Supply Power supply: 1.5V ±0.075V. VDDQ Supply DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immunity. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference NC – No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). NF – No function: When configured as a x4 device, these balls are NF. When configured as a x8 device, these balls are defined as TDQS#, DQ[7:4]. PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN External reference ball for output drive calibration: This ball is tied to an external 240Ω resistor (RZQ), which is tied to VSSQ. 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Table 4: 96-Ball FBGA – x16 Ball Descriptions Symbol Type Description A12/BC#, A10/AP, A [9:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 69 (page 113). BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle),or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. LDM Input Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte input data is masked when LDM is sampled HIGH along with the input data during a write access. Although the LDM ball is input-only, the LDM loading is designed to match that of the DQ and DQS balls. LDM is referenced to VREFDQ. ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#, UDQS, UDQS#, LDM, and UDM for the x16; DQ0[7:0], DQS, DQS#, DM/TDQS, and NF/TDQS# (when TDQS is enabled) for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDD and DC LOW ≤ 0.2 × VDDQ. RESET# assertion and desertion are asynchronous. PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Table 4: 96-Ball FBGA – x16 Ball Descriptions (Continued) Symbol Type Description UDM Input Input data mask: UDM is an upper-byte, input mask signal for write data. Upperbyte input data is masked when UDM is sampled HIGH along with that input data during a WRITE access. Although the UDM ball is input-only, the UDM loading is designed to match that of the DQ and DQS balls. UDM is referenced to VREFDQ. DQ[0:7] I/O Data input/output: Lower byte of bidirectional data bus for the x16 configuration. DQ[7:0] are referenced to VREFDQ. DQ[8:15] I/O Data input/output: Upper byte of bidirectional data bus for the x16 configuration. DQ[15:8] are referenced to VREFDQ. LDQS, LDQS# I/O Lower byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. UDQS, UDQS# I/O Upper byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. DQS is center-aligned to write data. VDD Supply Power supply: 1.5V ±0.075V. VDDQ Supply DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immunity. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference NC – PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN External reference ball for output drive calibration: This ball is tied to an external 240Ω resistor (RZQ), which is tied to VSSQ. No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions Package Dimensions Figure 8: 78-Ball FBGA – x4, x8 (JP) 0.8 ±0.1 Seating plane 0.12 A A 78X Ø0.45 Dimensions apply to solder balls postreflow on Ø0.33 NSMD ball pads. 8 ±0.15 9 8 7 3 2 Ball A1 ID 1 Ball A1 ID A B C D 0.8 TYP E F 9.6 CTR G 11.5 ±0.15 H J K L M N 0.8 TYP Notes: PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 1.2 MAX 6.4 CTR 0.25 MIN 1. All dimensions are in millimeters. 2. Material composition: Pb-free SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions Figure 9: 78-Ball FBGA – x4, x8 (DA) 0.155 Seating plane A 0.12 A 1.8 CTR Nonconductive overmold 78X Ø0.47 Dimensions apply to solder balls postreflow on Ø0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N 10.5 ±0.1 9.6 CTR 0.8 TYP 1.1 ±0.1 0.8 TYP 6.4 CTR 0.29 MIN 8 ±0.1 Notes: PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 1. All dimensions are in millimeters. 2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions Figure 10: 96-Ball FBGA – x16 (JT) 0.155 Seating plane A 1.8 CTR Nonconductive overmold 96X Ø0.45 Dimensions apply to solder balls postreflow on Ø0.35 SMD ball pads. 0.12 A Ball A1 ID 9 8 7 3 2 Ball A1 ID 1 A B C D E F 14 ±0.1 G H 12 CTR J K L M N P R 0.8 TYP T 1.1 ±0.1 0.8 TYP 6.4 CTR 0.25 MIN 8 ±0.1 Notes: PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 1. All dimensions are in millimeters. 2. Material composition: Pb-free SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions Figure 11: 96-Ball FBGA – x16 (TW) 0.155 Seating plane 0.12 A A 1.8 CTR Nonconductive overmold 96X Ø0.47 Dimensions apply to solder balls postreflow on Ø0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N P R T 14 ±0.1 12 CTR 0.8 TYP 1.1 ±0.1 0.8 TYP 6.4 CTR 0.29 MIN 8 ±0.1 Notes: PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 1. All dimensions are in millimeters. 2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications Electrical Specifications Absolute Ratings Stresses greater than those listed in Table 5 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 5: Absolute Maximum Ratings Symbol Parameter Min Max Unit Notes 1 VDD VDD supply voltage relative to VSS –0.4 1.975 V VDDQ VDD supply voltage relative to VSSQ –0.4 1.975 V VIN, VOUT Voltage on any pin relative to VSS –0.4 1.975 V 0 95 °C 2, 3 –40 95 °C 2, 3 2, 3 TC Operating case temperature - Commercial Operating case temperature - Industrial TSTG Operating case temperature - Automotive –40 105 °C Storage temperature –55 150 °C Notes: PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be greater than 0.6 × VDDQ. When VDD and VDDQ are 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B must be derated by 2%; IDD2Px must be derated by 30%. Table 20: IDD Maximum Limits – Rev. J Speed Bin Width DDR3 -1066 DDR3 -1333 DDR3 -1600 DDR3 -1866 DDR3 -2133 Units Notes IDD0 Operating current 0: One bank ACTIVATE-toPRECHARGE x4, x8 39 41 42 43 46 mA 1, 2 x16 46 48 49 51 55 mA 1, 2 Operating current 1: IDD1 One bank ACTIVATE-toREAD-to-PRECHARGE x4, x8 50 54 56 58 60 mA 1, 2 x16 62 67 69 72 75 mA 1, 2 Precharge power-down IDD2P0 (slow) current: Slow exit All 12 12 12 12 12 mA 1, 2 Precharge power-down IDD2P1 (fast) current: Fast exit All 15 15 15 15 15 mA 1, 2 Precharge quiet standby IDD2Q All 22 22 22 22 22 mA 1, 2 Precharge standby current IDD2N All 23 23 23 23 23 mA 1, 2 x4, x8 29 32 34 36 40 mA 1, 2 x16 33 36 37 39 43 mA 1, 2 Parameter Symbol Precharge standby ODT IDD2NT current Active power-down current IDD3P All 17 17 17 17 17 mA 1, 2 Active standby current IDD3N x4, x8 31 33 35 37 40 mA 1, 2 x16 33 36 37 39 43 mA 1, 2 Burst read operating current IDD4R x4, X8 74 88 100 110 125 mA 1, 2 x16 95 115 135 155 180 mA 1, 2 Burst write operating current IDD4W x4, X8 79 91 103 114 126 mA 1, 2 x16 107 127 146 164 184 mA 1, 2 Burst refresh current IDD5B All 155 160 160 165 170 mA 1, 2 Room temperature self IDD6 refresh All 12 12 12 12 12 mA 1, 2, 3 Extended temperature self refresh IDD6ET All 15 15 15 15 15 mA 1, 4 All banks interleaved read current IDD7 x4, X8 128 157 163 171 190 mA 1, 2 x16 159 179 202 226 248 mA 1, 2 All IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA mA 1, 2 Reset current IDD8 Notes: PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 1. TC = 85°C; SRT and ASR are disabled. 2. Enabling ASR could increase IDDx by up to an additional 2mA. 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics – IDD Specifications 3. Restricted to TC (MAX) = 85°C. 4. TC = 85°C; ASR and ODT are disabled; SRT is enabled. 5. The IDD values must be derated (increased) on IT-option and AT-option devices when operated outside of the range 0°C ≤ TC ≤ +85°C: 5a. When TC < 0°C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must be derated by 2%; and IDD6 and IDD7 must be derated by 7%. 5b. When TC > 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B must be derated by 2%; IDD2Px must be derated by 30%. PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications – DC and AC Electrical Specifications – DC and AC DC Operating Conditions Table 21: DC Electrical Characteristics and Operating Conditions All voltages are referenced to VSS Parameter/Condition Symbol Min Nom Max Unit Notes Supply voltage VDD 1.425 1.5 1.575 V 1, 2 I/O supply voltage VDDQ 1.425 1.5 1.575 V 1, 2 II –2 – 2 μA IVREF –1 – 1 μA Input leakage current Any input 0V ≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.1V (All other pins not under test = 0V) VREF supply leakage current VREFDQ = VDD/2 or VREFCA = VDD/2 (All other pins not under test = 0V) Notes: 3, 4 1. VDD and VDDQ must track one another. VDDQ must be ≤ VDD. VSS = VSSQ. 2. VDD and VDDQ may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC timing parameters. 3. VREF (see Table 22). 4. The minimum limit requirement is for testing purposes. The leakage current on the VREF pin should be minimal. Input Operating Conditions Table 22: DC Electrical Characteristics and Input Conditions All voltages are referenced to VSS Parameter/Condition VIN low; DC/commands/address busses VIN high; DC/commands/address busses Symbol Min Nom Max Unit VIL VSS n/a See Table 23 V Notes VIH See Table 23 n/a VDD V Input reference voltage command/address bus VREFCA(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 1, 2 I/O reference voltage DQ bus VREFDQ(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 2, 3 I/O reference voltage DQ bus in SELF REFRESH VREFDQ(SR) VSS 0.5 × VDD VDD V 4 VTT – 0.5 × VDDQ – V 5 Command/address termination voltage (system level, not direct DRAM input) Notes: PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 1. VREFCA(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC level. Externally generated peak noise (noncommon mode) on VREFCA may not exceed ±1% × VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not exceed ±2% of VREFCA(DC). 2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifications if the DRAM induces additional AC noise greater than 20 MHz in frequency. 3. VREFDQ(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC level. Externally generated peak noise (noncommon mode) on VREFDQ may not exceed ±1% × VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not exceed ±2% of VREFDQ(DC). 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications – DC and AC 4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH, within restrictions outlined in the SELF REFRESH section. 5. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors. Minimum and maximum values are system-dependent. Table 23: Input Switching Conditions Parameter/Condition DDR3-800 DDR3-1066 Symbol DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133 Unit – mV Command and Address Input high AC voltage: Logic 1 @ 175mV VIH(AC175)min 175 175 Input high AC voltage: Logic 1 @ 150mV VIH(AC150)min 150 150 – mV Input high AC voltage: Logic 1 @ 135 mV VIH(AC135)min – – 135 mV Input high AC voltage: Logic 1 @ 125 mV VIH(AC125)min – – 125 mV Input high DC voltage: Logic 1 @ 100 mV VIH(DC100)min 100 100 100 mV Input low DC voltage: Logic 0 @ –100mV VIL(DC100)max –100 –100 –100 mV Input low AC voltage: Logic 0 @ –125mV VIL(AC125)max – – –125 mV Input low AC voltage: Logic 0 @ –135mV VIL(AC135)max – – –135 mV Input low AC voltage: Logic 0 @ –150mV VIL(AC150)max –150 –150 – mV Input low AC voltage: Logic 0 @ –175mV VIL(AC175)max –175 –175 – mV DQ and DM Input high AC voltage: Logic 1 VIH(AC175)min 175 – – mV Input high AC voltage: Logic 1 VIH(AC150)min 150 150 – mV Input high AC voltage: Logic 1 VIH(AC135)min – – 135 mV Input high DC voltage: Logic 1 VIH(DC100)min 100 100 100 mV Input low DC voltage: Logic 0 VIL(DC100)max –100 –100 –100 mV Input low AC voltage: Logic 0 VIL(AC135)max – – –135 mV Input low AC voltage: Logic 0 VIL(AC150)max –150 –150 – mV Input low AC voltage: Logic 0 VIL(AC175)max –175 – – mV Notes: 1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ and DM inputs. 2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC). 3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC). 4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is 900mV (peak-to-peak). 5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific speed bin, the user may choose either value for the input AC level. Whichever value is used, the associated setup time for that AC level must also be used. Additionally, one VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may be used for data inputs. For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and VIH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/ command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps. PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications – DC and AC Table 24: Differential Input Operating Conditions (CK, CK# and DQS, DQS#) Parameter/Condition Differential input voltage logic high - slew Symbol Min Max Unit Notes VIH,diff 200 n/a mV 4 VIL,diff n/a –200 mV 4 Differential input voltage logic high VIH,diff(AC) 2 × (VIH(AC) - VREF) VDD/VDDQ mV 5 Differential input voltage logic low VIL,diff(AC) VSS/VSSQ 2 × (VIL(AC)-VREF) mV 6 Differential input crossing voltage relative to VDD/2 for DQS, DQS#; CK, CK# VIX VREF(DC) - 150 VREF(DC) + 150 mV 4, 7 Differential input crossing voltage relative to VDD/2 for CK, CK# VIX (175) VREF(DC) - 175 VREF(DC) + 175 mV 4, 7, 8 VSEH VDDQ/2 + 175 VDDQ mV 5 VDD/2 + 175 VDD mV 5 VSSQ VDDQ/2 - 175 mV 6 VSS VDD/2 - 175 mV 6 Differential input voltage logic low - slew Single-ended high level for strobes Single-ended high level for CK, CK# Single-ended low level for strobes VSEL Single-ended low level for CK, CK# Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ. Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe. Differential input slew rate = 2 V/ns Defines slew rate reference points, relative to input crossing voltages. Minimum DC limit is relative to single-ended signals; overshoot specifications are applicable. Maximum DC limit is relative to single-ended signals; undershoot specifications are applicable. The typical value of VIX(AC) is expected to be about 0.5 × VDD of the transmitting device, and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which differential input signals must cross. The VIX extended range (±175mV) is allowed only for the clock; this VIX extended range is only allowed when the following conditions are met: The single-ended input signals are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 ±250mV, and the differential slew rate of CK, CK# is greater than 3 V/ns. VIX must provide 25mV (single-ended) of the voltages separation. 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications – DC and AC Figure 13: Input Signal VIL and VIH levels with ringback 1.90V VDDQ + 0.4V narrow pulse width 1.50V VDDQ Minimum VIL and VIH levels 0.925V 0.850V VIH(AC) VIH(DC) 0.575V VIH(AC) 0.850V VIH(DC) 0.780V 0.765V 0.750V 0.735V 0.720V 0.780V 0.765V 0.750V 0.735V 0.720V 0.650V 0.925V VIL(DC) VIL(AC) VREF + AC noise VREF + DC error VREF - DC error VREF - AC noise 0.650V VIL(DC) 0.575V VIL(AC) 0.0V VSS VSS - 0.4V narrow pulse width –0.40V Note: PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 1. Numbers in diagrams reflect nominal values. 47 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications – DC and AC AC Overshoot/Undershoot Specification Table 25: Control and Address Pins Parameter DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133 Maximum peak amplitude allowed for overshoot area (see Figure 14) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum peak amplitude allowed for undershoot area (see Figure 15) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum overshoot area above VDD (see Figure 14) 0.67 Vns 0.5 Vns 0.4 Vns 0.33 Vns 0.28 Vns 0.25 Vns Maximum undershoot area below VSS (see Figure 15) 0.67 Vns 0.5 Vns 0.4 Vns 0.33 Vns 0.28 Vns 0.25 Vns Table 26: Clock, Data, Strobe, and Mask Pins Parameter DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133 Maximum peak amplitude allowed for overshoot area (see Figure 14) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum peak amplitude allowed for undershoot area (see Figure 15) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum overshoot area above VDD/VDDQ (see Figure 14) 0.25 Vns 0.19 Vns 0.15 Vns 0.13 Vns 0.11 Vns 0.10 Vns Maximum undershoot area below VSS/VSSQ (see Figure 15) 0.25 Vns 0.19 Vns 0.15 Vns 0.13 Vns 0.11 Vns 0.10 Vns Figure 14: Overshoot Maximum amplitude Overshoot area Volts (V) VDD/VDDQ Time (ns) Figure 15: Undershoot VSS/VSSQ Volts (V) Undershoot area Maximum amplitude Time (ns) PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications – DC and AC Figure 16: VIX for Differential Signals VDD, VDDQ VDD, VDDQ CK#, DQS# CK#, DQS# X VIX VIX VDD/2, VDDQ/2 X X VDD/2, VDDQ/2 VIX X VIX CK, DQS CK, DQS VSS, VSSQ VSS, VSSQ Figure 17: Single-Ended Requirements for Differential Signals VDD or VDDQ VSEH,min VDD/2 or VDDQ/2 VSEH CK or DQS VSEL,max VSEL VSS or VSSQ PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications – DC and AC Figure 18: Definition of Differential AC-Swing and tDVAC tDVAC VIH,diff(AC)min VIH,diff,min CK - CK# DQS - DQS# 0.0 VIL,diff,max VIL,diff(AC)max tDVAC Half cycle Table 27: Allowed Time Before Ringback (tDVAC) for CK - CK# and DQS DQS# tDVAC Slew Rate (V/ns) Note: PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. N 11/14 EN (ps) at |VIH,diff(AC) to VIL,diff(AC)| 350mV 300mV >4.0 75 175 4.0 57 170 3.0 50 167 2.0 38 163 1.9 34 162 1.6 29 161 1.4 22 159 1.2 13 155 1.0 0 150