MT41K512M8DA-093:P

4Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • • • • • DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM (Die Rev :E) data sheet specifications when running in 1.5V compatible mode. Self refresh temperature (SRT) Automatic self refresh (ASR) Write leveling Multipurpose register Output driver calibration Options Features Marking • Configuration – 1 Gig x 4 – 512 Meg x 8 – 256 Meg x 16 • FBGA package (Pb-free) – x4, x8 – 78-ball (9mm x 10.5mm) Rev. E – 78-ball (7.5mm x 10.6mm) Rev. N – 78-ball (8mm x 10.5mm) Rev. P • FBGA package (Pb-free) – x16 – 96-ball (9mm x 14mm) Rev. E – 96-ball (7.5mm x 13.5mm) Rev. N – 96-ball (8mm x 14mm) Rev. P • Timing – cycle time – 938ps @ CL = 14 (DDR3-2133) – 1.07ns @ CL = 13 (DDR3-1866) – 1.25ns @ CL = 11 (DDR3-1600) • Operating temperature – Commercial (0°C ” T C ” +95°C) – Industrial (–40°C ” T C ” +95°C) – Automotive (–40°C ” T C ” +105°C) • Revision • VDD = V DDQ = 1.35V (1.283–1.45V) • Backward compatible to V DD = V DDQ = 1.5V ±0.075V – Supports DDR3L devices to be backward compatible in 1.5V applications • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable posted CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of 105°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C – 16ms, 8192-cycle refresh at >95°C to 105°C 1G4 512M8 256M16 RH RG DA HA LY TW -093 -107 -125 None IT AT :E/:N/:P Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL -093 1, 2 2133 14-14-14 13.09 13.09 13.09 -107 1 1866 13-13-13 13.91 13.91 13.91 -125 1600 11-11-11 13.75 13.75 13.75 Notes: tRCD (ns) tRP (ns) CL (ns) 1. Backward compatible to 1600, CL = 11 (-125). 2. Backward compatible to 1866, CL = 13 (-107). 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 4Gb: x4, x8, x16 DDR3L SDRAM Description Table 2: Addressing Parameter Configuration 1 Gig x 4 512 Meg x 8 256 Meg x 16 128 Meg x 4 x 8 banks 64 Meg x 8 x 8 banks 32 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row address 64K (A[15:0]) 64K (A[15:0]) 32K (A[14:0]) Bank address 8 (BA[2:0]) 8 (BA[2:0]) 8 (BA[2:0]) 2K (A[11, 9:0]) 1K (A[9:0]) 1K (A[9:0]) 1KB 1KB 2KB Column address Page size Figure 1: DDR3L Part Numbers ([DPSOH3DUW1XPEHU 07.0'$3  3DFNDJH &RQILJXUDWLRQ 6SHHG 5HYLVLRQ ^ 07.  (13 5HYLVLRQ &RQILJXUDWLRQ *LJ[ * 0HJ[ 0 7HPSHUDWXUH 0HJ[ 0 &RPPHUFLDO 3DFNDJH EDOOPP[PP)%*$ Note: 5HY 0DUN ( 5+ EDOOPP[PP)%*$ 1 5* EDOOPP[PP)%*$ EDOOPP[PP)%*$ 3 ( '$ +$ EDOOPP[PP)%*$ 1 /< EDOOPP[PP)%*$ 3 7: 1RQH ,QGXVWULDOWHPSHUDWXUH ,7 $XWRPRWLYHWHPSHUDWXUH $7 6SHHG*UDGH  W &. QV&/   W &. QV&/   W &. QV&/  1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description Contents Important Notes and Warnings ....................................................................................................................... 11 State Diagram ................................................................................................................................................ 12 Functional Description ................................................................................................................................... 13 Industrial Temperature ............................................................................................................................... 13 Automotive Temperature ............................................................................................................................ 13 General Notes ............................................................................................................................................ 14 Functional Block Diagrams ............................................................................................................................. 15 Ball Assignments and Descriptions ................................................................................................................. 17 Package Dimensions ....................................................................................................................................... 23 Electrical Specifications .................................................................................................................................. 29 Absolute Ratings ......................................................................................................................................... 29 Input/Output Capacitance .......................................................................................................................... 30 Thermal Characteristics .................................................................................................................................. 31 Electrical Specifications – IDD Specifications and Conditions ............................................................................ 33 Electrical Characteristics – Operating IDD Specifications .................................................................................. 44 Electrical Specifications – DC and AC .............................................................................................................. 49 DC Operating Conditions ........................................................................................................................... 49 Input Operating Conditions ........................................................................................................................ 50 DDR3L 1.35V AC Overshoot/Undershoot Specification ................................................................................ 54 DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals .............................................................. 57 DDR3L 1.35V Slew Rate Definitions for Differential Input Signals ................................................................. 59 ODT Characteristics ....................................................................................................................................... 60 1.35V ODT Resistors ................................................................................................................................... 61 ODT Sensitivity .......................................................................................................................................... 62 ODT Timing Definitions ............................................................................................................................. 62 Output Driver Impedance ............................................................................................................................... 66 34 Ohm Output Driver Impedance .............................................................................................................. 67 DDR3L 34 Ohm Driver ................................................................................................................................ 68 DDR3L 34 Ohm Output Driver Sensitivity .................................................................................................... 69 DDR3L Alternative 40 Ohm Driver ............................................................................................................... 70 DDR3L 40 Ohm Output Driver Sensitivity .................................................................................................... 70 Output Characteristics and Operating Conditions ............................................................................................ 72 Reference Output Load ............................................................................................................................... 75 Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 75 Slew Rate Definitions for Differential Output Signals .................................................................................... 77 Speed Bin Tables ............................................................................................................................................ 78 Electrical Characteristics and AC Operating Conditions ................................................................................... 83 Command and Address Setup, Hold, and Derating .......................................................................................... 103 Data Setup, Hold, and Derating ...................................................................................................................... 110 Commands – Truth Tables ............................................................................................................................. 118 Commands ................................................................................................................................................... 121 DESELECT ................................................................................................................................................ 121 NO OPERATION ........................................................................................................................................ 121 ZQ CALIBRATION LONG ........................................................................................................................... 121 ZQ CALIBRATION SHORT .......................................................................................................................... 121 ACTIVATE ................................................................................................................................................. 121 READ ........................................................................................................................................................ 121 WRITE ...................................................................................................................................................... 122 PRECHARGE ............................................................................................................................................. 123 REFRESH .................................................................................................................................................. 123 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description SELF REFRESH .......................................................................................................................................... 124 DLL Disable Mode ..................................................................................................................................... 125 Input Clock Frequency Change ...................................................................................................................... 129 Write Leveling ............................................................................................................................................... 131 Write Leveling Procedure ........................................................................................................................... 133 Write Leveling Mode Exit Procedure ........................................................................................................... 135 Initialization ................................................................................................................................................. 136 Voltage Initialization/Change ........................................................................................................................ 138 VDD Voltage Switching ............................................................................................................................... 139 Mode Registers .............................................................................................................................................. 140 Mode Register 0 (MR0) ................................................................................................................................... 141 Burst Length ............................................................................................................................................. 141 Burst Type ................................................................................................................................................. 142 DLL RESET ................................................................................................................................................ 143 Write Recovery .......................................................................................................................................... 144 Precharge Power-Down (Precharge PD) ...................................................................................................... 144 CAS Latency (CL) ....................................................................................................................................... 144 Mode Register 1 (MR1) ................................................................................................................................... 146 DLL Enable/DLL Disable ........................................................................................................................... 146 Output Drive Strength ............................................................................................................................... 147 OUTPUT ENABLE/DISABLE ...................................................................................................................... 147 TDQS Enable ............................................................................................................................................. 147 On-Die Termination .................................................................................................................................. 148 WRITE LEVELING ..................................................................................................................................... 148 POSTED CAS ADDITIVE Latency ................................................................................................................ 148 Mode Register 2 (MR2) ................................................................................................................................... 149 CAS Write Latency (CWL) ........................................................................................................................... 150 AUTO SELF REFRESH (ASR) ....................................................................................................................... 150 SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 150 SRT vs. ASR ............................................................................................................................................... 151 DYNAMIC ODT ......................................................................................................................................... 151 Mode Register 3 (MR3) ................................................................................................................................... 151 MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 152 MPR Functional Description ...................................................................................................................... 153 MPR Register Address Definitions and Bursting Order ................................................................................. 154 MPR Read Predefined Pattern .................................................................................................................... 159 MODE REGISTER SET (MRS) Command ........................................................................................................ 159 ZQ CALIBRATION Operation ......................................................................................................................... 160 ACTIVATE Operation ..................................................................................................................................... 161 READ Operation ............................................................................................................................................ 163 WRITE Operation .......................................................................................................................................... 174 DQ Input Timing ....................................................................................................................................... 182 PRECHARGE Operation ................................................................................................................................. 184 SELF REFRESH Operation .............................................................................................................................. 184 Extended Temperature Usage ........................................................................................................................ 186 Power-Down Mode ........................................................................................................................................ 187 RESET Operation ........................................................................................................................................... 195 On-Die Termination (ODT) ............................................................................................................................ 197 Functional Representation of ODT ............................................................................................................. 197 Nominal ODT ............................................................................................................................................ 197 Dynamic ODT ............................................................................................................................................... 199 Dynamic ODT Special Use Case ................................................................................................................. 199 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description Functional Description .............................................................................................................................. 199 Synchronous ODT Mode ................................................................................................................................ 205 ODT Latency and Posted ODT .................................................................................................................... 205 Timing Parameters .................................................................................................................................... 205 ODT Off During READs .............................................................................................................................. 208 Asynchronous ODT Mode .............................................................................................................................. 210 Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 212 Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 214 Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 216 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description List of Figures Figure 1: DDR3L Part Numbers ........................................................................................................................ 2 Figure 2: Simplified State Diagram ................................................................................................................. 12 Figure 3: 1 Gig x 4 Functional Block Diagram .................................................................................................. 15 Figure 4: 512 Meg x 8 Functional Block Diagram ............................................................................................. 16 Figure 5: 256 Meg x 16 Functional Block Diagram ........................................................................................... 16 Figure 6: 78-Ball FBGA – x4, x8 (Top View) ...................................................................................................... 17 Figure 7: 96-Ball FBGA – x16 (Top View) ......................................................................................................... 18 Figure 8: 78-Ball FBGA – x4, x8 (RH) ............................................................................................................... 23 Figure 9: 78-Ball FBGA – x4, x8 (RG) ............................................................................................................... 24 Figure 10: 78-Ball FBGA – x4, x8 (DA) ............................................................................................................. 25 Figure 11: 96-Ball FBGA – x16 (HA) ................................................................................................................. 26 Figure 12: 96-Ball FBGA – x16 (LY) .................................................................................................................. 27 Figure 13: 96-Ball FBGA – x16 (TW) ................................................................................................................ 28 Figure 14: Thermal Measurement Point ......................................................................................................... 31 Figure 15: DDR3L 1.35V Input Signal .............................................................................................................. 53 Figure 16: Overshoot ..................................................................................................................................... 54 Figure 17: Undershoot ................................................................................................................................... 55 Figure 18: V IX for Differential Signals .............................................................................................................. 55 Figure 19: Single-Ended Requirements for Differential Signals ........................................................................ 55 Figure 20: Definition of Differential AC-Swing and tDVAC ............................................................................... 56 Figure 21: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 58 Figure 22: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# .............. 59 Figure 23: ODT Levels and I-V Characteristics ................................................................................................ 60 Figure 24: ODT Timing Reference Load .......................................................................................................... 63 Figure 25: tAON and tAOF Definitions ............................................................................................................ 64 Figure 26: tAONPD and tAOFPD Definitions ................................................................................................... 64 Figure 27: tADC Definition ............................................................................................................................. 65 Figure 28: Output Driver ................................................................................................................................ 66 Figure 29: DQ Output Signal .......................................................................................................................... 73 Figure 30: Differential Output Signal .............................................................................................................. 74 Figure 31: Reference Output Load for AC Timing and Output Slew Rate ........................................................... 75 Figure 32: Nominal Slew Rate Definition for Single-Ended Output Signals ....................................................... 76 Figure 33: Nominal Differential Output Slew Rate Definition for DQS, DQS# .................................................... 77 Figure 34: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock) ............................................. 106 Figure 35: Nominal Slew Rate for tIH (Command and Address – Clock) ........................................................... 107 Figure 36: Tangent Line for tIS (Command and Address – Clock) .................................................................... 108 Figure 37: Tangent Line for tIH (Command and Address – Clock) .................................................................... 109 Figure 38: Nominal Slew Rate and tVAC for tDS (DQ – Strobe) ......................................................................... 114 Figure 39: Nominal Slew Rate for tDH (DQ – Strobe) ...................................................................................... 115 Figure 40: Tangent Line for tDS (DQ – Strobe) ................................................................................................ 116 Figure 41: Tangent Line for tDH (DQ – Strobe) ............................................................................................... 117 Figure 42: Refresh Mode ............................................................................................................................... 124 Figure 43: DLL Enable Mode to DLL Disable Mode ........................................................................................ 126 Figure 44: DLL Disable Mode to DLL Enable Mode ........................................................................................ 127 Figure 45: DLL Disable tDQSCK .................................................................................................................... 128 Figure 46: Change Frequency During Precharge Power-Down ........................................................................ 130 Figure 47: Write Leveling Concept ................................................................................................................. 131 Figure 48: Write Leveling Sequence ............................................................................................................... 134 Figure 49: Write Leveling Exit Procedure ....................................................................................................... 135 Figure 50: Initialization Sequence ................................................................................................................. 137 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description Figure 51: V DD Voltage Switching .................................................................................................................. 139 Figure 52: MRS to MRS Command Timing ( tMRD) ......................................................................................... 140 Figure 53: MRS to nonMRS Command Timing ( tMOD) .................................................................................. 141 Figure 54: Mode Register 0 (MR0) Definitions ................................................................................................ 142 Figure 55: READ Latency .............................................................................................................................. 145 Figure 56: Mode Register 1 (MR1) Definition ................................................................................................. 146 Figure 57: READ Latency (AL = 5, CL = 6) ....................................................................................................... 149 Figure 58: Mode Register 2 (MR2) Definition ................................................................................................. 149 Figure 59: CAS Write Latency ........................................................................................................................ 150 Figure 60: Mode Register 3 (MR3) Definition ................................................................................................. 152 Figure 61: Multipurpose Register (MPR) Block Diagram ................................................................................. 153 Figure 62: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 155 Figure 63: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 156 Figure 64: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 157 Figure 65: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 158 Figure 66: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 160 Figure 67: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 161 Figure 68: Example: tFAW ............................................................................................................................. 162 Figure 69: READ Latency .............................................................................................................................. 163 Figure 70: Consecutive READ Bursts (BL8) .................................................................................................... 165 Figure 71: Consecutive READ Bursts (BC4) .................................................................................................... 165 Figure 72: Nonconsecutive READ Bursts ....................................................................................................... 166 Figure 73: READ (BL8) to WRITE (BL8) .......................................................................................................... 166 Figure 74: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 167 Figure 75: READ to PRECHARGE (BL8) .......................................................................................................... 167 Figure 76: READ to PRECHARGE (BC4) ......................................................................................................... 168 Figure 77: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 168 Figure 78: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 168 Figure 79: Data Output Timing – tDQSQ and Data Valid Window .................................................................... 170 Figure 80: Data Strobe Timing – READs ......................................................................................................... 171 Figure 81: Method for Calculating tLZ and tHZ ............................................................................................... 172 Figure 82: tRPRE Timing ............................................................................................................................... 172 Figure 83: tRPST Timing ............................................................................................................................... 173 Figure 84: tWPRE Timing .............................................................................................................................. 175 Figure 85: tWPST Timing .............................................................................................................................. 175 Figure 86: WRITE Burst ................................................................................................................................ 176 Figure 87: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 177 Figure 88: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 177 Figure 89: Nonconsecutive WRITE to WRITE ................................................................................................. 178 Figure 90: WRITE (BL8) to READ (BL8) .......................................................................................................... 178 Figure 91: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 179 Figure 92: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 180 Figure 93: WRITE (BL8) to PRECHARGE ........................................................................................................ 181 Figure 94: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 181 Figure 95: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 182 Figure 96: Data Input Timing ........................................................................................................................ 183 Figure 97: Self Refresh Entry/Exit Timing ...................................................................................................... 185 Figure 98: Active Power-Down Entry and Exit ................................................................................................ 189 Figure 99: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 189 Figure 100: Precharge Power-Down (Slow-Exit Mode) Entry and Exit .............................................................. 190 Figure 101: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ........................................... 190 Figure 102: Power-Down Entry After WRITE .................................................................................................. 191 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description Figure 103: Figure 104: Figure 105: Figure 106: Figure 107: Figure 108: Figure 109: Figure 110: Figure 111: Figure 112: Figure 113: Figure 114: Figure 115: Figure 116: Figure 117: Figure 118: Figure 119: Figure 120: Figure 121: Figure 122: Figure 123: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 191 REFRESH to Power-Down Entry .................................................................................................. 192 ACTIVATE to Power-Down Entry ................................................................................................. 192 PRECHARGE to Power-Down Entry ............................................................................................. 193 MRS Command to Power-Down Entry ......................................................................................... 193 Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 194 RESET Sequence ......................................................................................................................... 196 On-Die Termination ................................................................................................................... 197 Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 202 Dynamic ODT: Without WRITE Command .................................................................................. 202 Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 203 Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 204 Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 204 Synchronous ODT ...................................................................................................................... 206 Synchronous ODT (BC4) ............................................................................................................. 207 ODT During READs .................................................................................................................... 209 Asynchronous ODT Timing with Fast ODT Transition .................................................................. 211 Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 213 Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 215 Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 217 Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 217 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description List of Tables Table 1: Key Timing Parameters ....................................................................................................................... 1 Table 2: Addressing ......................................................................................................................................... 2 Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions .............................................................................................. 19 Table 4: 96-Ball FBGA – x16 Ball Descriptions ................................................................................................. 21 Table 5: Absolute Maximum Ratings .............................................................................................................. 29 Table 6: DDR3L Input/Output Capacitance .................................................................................................... 30 Table 7: Thermal Characteristics .................................................................................................................... 31 Table 8: Thermal Impedance ......................................................................................................................... 32 Table 9: Timing Parameters Used for I DD Measurements – Clock Units ............................................................ 33 Table 10: IDD0 Measurement Loop .................................................................................................................. 34 Table 11: IDD1 Measurement Loop .................................................................................................................. 35 Table 12: IDD Measurement Conditions for Power-Down Currents ................................................................... 36 Table 13: IDD2N and IDD3N Measurement Loop ................................................................................................ 37 Table 14: IDD2NT Measurement Loop .............................................................................................................. 37 Table 15: IDD4R Measurement Loop ................................................................................................................ 38 Table 16: IDD4W Measurement Loop ............................................................................................................... 39 Table 17: IDD5B Measurement Loop ................................................................................................................ 40 Table 18: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 .................................................................... 41 Table 19: IDD7 Measurement Loop .................................................................................................................. 42 Table 20: IDD Maximum Limits Die Rev. E for 1.35/1.5V Operation ................................................................... 44 Table 21: IDD Maximum Limits Die Rev. N for 1.35V/1.5V Operation ................................................................ 45 Table 22: IDD Maximum Limits Die Rev. P for 1.35V/1.5V Operation ................................................................. 47 Table 23: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions .............................................. 49 Table 24: DDR3L 1.35V DC Electrical Characteristics and Input Conditions ..................................................... 50 Table 25: DDR3L 1.35V Input Switching Conditions – Command and Address ................................................. 51 Table 26: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .............................. 52 Table 27: DDR3L Control and Address Pins ..................................................................................................... 54 Table 28: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins ............................................................................. 54 Table 29: DDR3L 1.35V – Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback ... 56 Table 30: Single-Ended Input Slew Rate Definition .......................................................................................... 57 Table 31: DDR3L 1.35V Differential Input Slew Rate Definition ........................................................................ 59 Table 32: On-Die Termination DC Electrical Characteristics ............................................................................ 60 Table 33: 1.35V RTT Effective Impedance ........................................................................................................ 61 Table 34: ODT Sensitivity Definition .............................................................................................................. 62 Table 35: ODT Temperature and Voltage Sensitivity ........................................................................................ 62 Table 36: ODT Timing Definitions .................................................................................................................. 63 Table 37: DDR3L(1.35V) Reference Settings for ODT Timing Measurements .................................................... 63 Table 38: DDR3L 34 Ohm Driver Impedance Characteristics ........................................................................... 67 Table 39: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations ........................................... 68 Table 40: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.35V ..................................... 68 Table 41: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.45V ..................................... 68 Table 42: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.283 ..................................... 69 Table 43: DDR3L 34 Ohm Output Driver Sensitivity Definition ........................................................................ 69 Table 44: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity .................................................. 69 Table 45: DDR3L 40 Ohm Driver Impedance Characteristics ........................................................................... 70 Table 46: DDR3L 40 Ohm Output Driver Sensitivity Definition ........................................................................ 70 Table 47: 40 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 71 Table 48: DDR3L Single-Ended Output Driver Characteristics ......................................................................... 72 Table 49: DDR3L Differential Output Driver Characteristics ............................................................................ 73 Table 50: DDR3L Differential Output Driver Characteristics V OX(AC) ................................................................. 74 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description Table 51: Table 52: Table 53: Table 54: Table 55: Table 56: Table 57: Table 58: Table 59: Table 60: Table 61: Table 62: Table 63: Table 64: Table 65: Table 66: Table 67: Table 68: Table 69: Table 70: Table 71: Table 72: Table 73: Table 74: Table 75: Table 76: Table 77: Table 78: Table 79: Table 80: Table 81: Table 82: Table 83: Table 84: Table 85: Table 86: Table 87: Table 88: Table 89: Table 90: Table 91: Table 92: Single-Ended Output Slew Rate Definition ....................................................................................... 75 Differential Output Slew Rate Definition .......................................................................................... 77 DDR3L-1066 Speed Bins .................................................................................................................. 78 DDR3L-1333 Speed Bins .................................................................................................................. 79 DDR3L-1600 Speed Bins .................................................................................................................. 80 DDR3L-1866 Speed Bins .................................................................................................................. 81 DDR3L-2133 Speed Bins .................................................................................................................. 82 Electrical Characteristics and AC Operating Conditions .................................................................... 83 Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 93 DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced – AC/DC-Based ............... 103 DDR3L-800/1066 Derating Values tIS/tIH – AC160/DC90-Based ....................................................... 104 DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC135/DC90-Based ................................ 104 DDR3L-1866/2133 Derating Values for tIS/tIH – AC125/DC90-Based ................................................ 104 DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL[AC]) for Valid ADD/CMD Transition . 105 DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based ....................... 110 DDR3L Derating Values for tDS/tDH – AC160/DC90-Based .............................................................. 111 DDR3L Derating Values for tDS/tDH – AC135/DC90-Based .............................................................. 111 DDR3L Derating Values for tDS/tDH – AC130/DC90-Based at 2V/ns ................................................. 112 DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition ............. 113 Truth Table – Command ................................................................................................................. 118 Truth Table – CKE .......................................................................................................................... 120 READ Command Summary ............................................................................................................ 122 WRITE Command Summary .......................................................................................................... 122 READ Electrical Characteristics, DLL Disable Mode ......................................................................... 128 Write Leveling Matrix ..................................................................................................................... 132 Burst Order .................................................................................................................................... 143 MPR Functional Description of MR3 Bits ........................................................................................ 153 MPR Readouts and Burst Order Bit Mapping ................................................................................... 154 Self Refresh Temperature and Auto Self Refresh Description ............................................................ 186 Self Refresh Mode Summary ........................................................................................................... 186 Command to Power-Down Entry Parameters .................................................................................. 187 Power-Down Modes ....................................................................................................................... 188 Truth Table – ODT (Nominal) ......................................................................................................... 198 ODT Parameters ............................................................................................................................ 198 Write Leveling with Dynamic ODT Special Case .............................................................................. 199 Dynamic ODT Specific Parameters ................................................................................................. 200 Mode Registers for RTT,nom ............................................................................................................. 200 Mode Registers for RTT(WR) ............................................................................................................. 201 Timing Diagrams for Dynamic ODT ................................................................................................ 201 Synchronous ODT Parameters ........................................................................................................ 206 Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 211 ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................... 213 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Important Notes and Warnings Important Notes and Warnings Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions. This document supersedes and replaces all information supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorized by Micron. Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting from any use of non-automotive-grade products in automotive applications. Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of the Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron component for any critical application, customer and distributor shall indemnify and hold harmless Micron and its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the Micron product. Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems, applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included in customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component. Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort, warranty, breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly authorized representative. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM State Diagram State Diagram Figure 2: Simplified State Diagram CKE L Power applied Power on MRS, MPR, write leveling Initialization Reset procedure Self refresh SRE ZQCL From any state RESET ZQ calibration MRS SRX REF ZQCL/ZQCS Refreshing Idle PDE ACT PDX Active powerdown Precharge powerdown Activating PDX CKE L CKE L PDE Bank active WRITE WRITE READ WRITE AP Writing READ READ AP READ WRITE WRITE AP Reading READ AP WRITE AP READ AP PRE, PREA Writing PRE, PREA PRE, PREA Reading Precharging Automatic sequence Command sequence ACT = ACTIVATE MPR = Multipurpose register MRS = Mode register set PDE = Power-down entry PDX = Power-down exit PRE = PRECHARGE 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN PREA = PRECHARGE ALL READ = RD, RDS4, RDS8 READ AP = RDAP, RDAPS4, RDAPS8 REF = REFRESH RESET = START RESET PROCEDURE SRE = Self refresh entry 12 SRX = Self refresh exit WRITE = WR, WRS4, WRS8 WRITE AP = WRAP, WRAPS4, WRAPS8 ZQCL = ZQ LONG CALIBRATION ZQCS = ZQ SHORT CALIBRATION Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Functional Description Functional Description DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins. The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes. The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ preamble. Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE commands are used to select the bank and the starting column location for the burst access. The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM allows for concurrent operation, thereby providing high bandwidth by hiding row precharge and activation time. A self refresh mode is provided, along with a power-saving, power-down mode. Industrial Temperature The industrial temperature (IT) device requires that the case temperature not exceed –40°C or 95°C. JEDEC specifications require the refresh rate to double when T C exceeds 85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when T C is < 0°C or >95°C. Automotive Temperature The Automotive temperature (AT) device requires that the case temperature not exceed –40°C or 105°C. Micron specification requires the refresh rate to 4X when T C exceeds 95°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when T C is < 0°C or >95°C. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Functional Description General Notes • The functionality and the timing specifications discussed in this data sheet are for the DLL enable mode of operation (normal operation). • Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ is to be interpreted as any and all DQ collectively, unless specifically stated otherwise. • The terms “DQS” and “CK” found throughout this data sheet are to be interpreted as DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise. • Complete functionality may be described throughout the document; any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. • Any specific requirement takes precedence over a general statement. • Any functionality not specifically stated is considered undefined, illegal, and not supported, and can result in unknown operation. • Row addressing is denoted as A[n:0]. For example, 1Gb: n = 12 (x16); 1Gb: n = 13 (x4, x8); 2Gb: n = 13 (x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4, x8). • Dynamic ODT has a special use case: when DDR3 devices are architected for use in a single rank memory array, the ODT ball can be wired HIGH rather than routed. Refer to the Dynamic ODT Special Use Case section. • A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be used, use the lower byte for data transfers and terminate the upper byte as noted: – – – – Connect UDQS to ground via 1kȍ* resistor. Connect UDQS# to V DD via 1kȍ* resistor. Connect UDM to V DD via 1kȍ* resistor. Connect DQ[15:8] individually to either V SS, V DD, or V REF via 1kȍ resistors,* or float DQ[15:8]. *If ODT is used, 1kȍ resistor should be changed to 4x that of the selected ODT. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Functional Block Diagrams Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Figure 3: 1 Gig x 4 Functional Block Diagram ODT control ODT ZQ RZQ ZQCL, ZQCS CKE VSSQ To pull-up/pull-down networks ZQ CAL RESET# Control logic A12 CK, CK# VDDQ/2 BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter 19 Columns 0, 1, and 2 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 16 16 Bank 0 rowaddress latch and decoder 65,536 DLL (1 . . . 4) Bank 0 memory array (65,536 x 256 x 32) 32 READ FIFO and data MUX 4 DQ[3:0] READ drivers BC4 RTT,nom 8,192 BC4 OTF A[15:0] BA[2:0] 19 Address register 3 sw1 sw2 DM (1, 2) Columnaddress counter/ latch DQS, DQS# VDDQ/2 32 Data interface Column decoder 4 Data WRITE drivers and input logic 8 RTT,nom sw1 RTT(WR) sw2 DM 3 Columns 0, 1, and 2 CK, CK# 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN RTT(WR) Bank control logic 256 (x32) 11 DQ[3:0] DQS, DQS# VDDQ/2 32 I/O gating DM mask logic sw2 sw1 Sense amplifiers 3 RTT(WR) CK, CK# 16 Rowaddress MUX RTT,nom 15 Column 2 (select upper or lower nibble for BC4) Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Functional Block Diagrams Figure 4: 512 Meg x 8 Functional Block Diagram ODT control ODT ZQ RZQ Control logic CKE VSSQ To ODT/output drivers ZQ CAL RESET# ZQCL, ZQCS A12 VDDQ/2 CK, CK# BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter CK, CK# sw1 (1 . . . 8) 19 Bank 0 Memory array (65,536 x 128 x 64) Bank 0 rowaddress 65,536 latch and decoder 16 16 Sense amplifiers sw2 DLL 16 Rowaddress MUX 64 DQ8 READ FIFO and data MUX 8 19 Address register DQ[7:0] DQS, DQS# VDDQ/2 64 BC4 OTF RTT,nom sw1 RTT(WR) sw2 I/O gating DM mask logic 3 A[15:0] BA[2:0] TDQS# DQ[7:0] Read drivers BC4 8,192 RTT(WR) RTT,nom Columns 0, 1, and 2 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 (1, 2) Bank control logic 3 VDDQ/2 (128 x64) 64 8 Data interface Data Column decoder Columnaddress counter/ latch 10 DQS/DQS# Write drivers and input logic RTT,nom sw1 RTT(WR) sw2 7 DM/TDQS (shared pin) 3 Columns 0, 1, and 2 CK, CK# Column 2 (select upper or lower nibble for BC4) Figure 5: 256 Meg x 16 Functional Block Diagram ODT control ODT ZQ RZQ Control logic CKE VSSQ To ODT/output drivers ZQ CAL RESET# ZQCL, ZQCS A12 VDDQ/2 CK, CK# BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter 18 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 15 15 Bank 0 rowaddress latch and decoder 32,768 DLL (1 . . . 16) 128 READ FIFO and data MUX 16 DQ[15:0] READ drivers LDQS, LDQS#, UDQS, UDQS# BC4 128 18 Address register 3 sw2 LDQS, LDQS# Bank control logic (1 . . . 4) Columnaddress counter/ latch UDQS, UDQS# VDDQ/2 128 Data interface Column decoder 16 Data WRITE drivers and input logic RTT,nom sw1 RTT(WR) sw2 7 (1, 2) LDM/UDM 3 Columns 0, 1, and 2 CK, CK# 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN RTT(WR) I/O gating DM mask logic (128 x128) 10 RTT,nom sw1 BC4 OTF 3 DQ[15:0] VDDQ/2 Sense amplifiers A[14:0] BA[2:0] sw2 sw1 Bank 0 memory array (32,768 x 128 x 128) 16,384 RTT(WR) CK, CK# 13 Rowaddress MUX RTT,nom Column 0, 1, and 2 16 Column 2 (select upper or lower nibble for BC4) Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Ball Assignments and Descriptions Figure 6: 78-Ball FBGA – x4, x8 (Top View) 1 2 3 VSS VDD VSS VDDQ 4 5 6 7 8 9 NC NF, NF/TDQS# VSS VDD VSSQ DQ0 DM, DM/TDQS VSSQ VDDQ DQ2 DQS DQ1 DQ3 VSSQ NF, DQ6 DQS# VDD VSS VSSQ A B C D VSSQ E VREFDQ NF, DQ7 NF, DQ5 VDDQ NF, DQ4 VDDQ F NC VSS RAS# CK VSS NC ODT VDD CAS# CK# VDD CKE NC CS# WE# A10/AP ZQ NC VSS BA0 BA2 A15 VREFCA VSS VDD A3 A0 A12/BC# BA1 VDD VSS A5 A2 A1 A4 VSS VDD A7 A9 A11 A6 VDD VSS RESET# A13 A14 A8 VSS G H J K L M N Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. Ball descriptions listed in Table 3 (page 19) are listed as “x4, x8” if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are defined in Table 3). 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Figure 7: 96-Ball FBGA – x16 (Top View) 1 2 3 VDDQ DQ13 VSSQ 4 5 6 7 8 9 DQ15 DQ12 VDDQ VSS VDD VSS UDQS# DQ14 VSSQ VDDQ DQ11 DQ9 UDQS DQ10 VDDQ VSSQ VDDQ UDM DQ8 VSSQ VDD VSS VSSQ DQ0 LDM VSSQ VDDQ VDDQ DQ2 LDQS DQ1 DQ3 VSSQ VSSQ DQ6 LDQS# VDD VSS VSSQ VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ NC VSS RAS# CK VSS NC ODT VDD CAS# CK# VDD CKE NC CS# WE# A10/AP ZQ NC VSS BA0 BA2 NC VREFCA VSS VDD A3 A0 A12/BC# BA1 VDD VSS A5 A2 A1 A4 VSS VDD A7 A9 A11 A6 VDD VSS RESET# A13 A14 A8 VSS A B C D E F G H J K L M N P R T Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. Ball descriptions listed in Table 4 (page 21) are listed as “x4, x8” if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are defined in Table 3). 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions Symbol Type Description A[15:13], A12/BC#, A11, A10/AP, A[9:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 70 (page 118). BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/ disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle), or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. DM Input Input data mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with the input data during a write access. Although the DM ball is input-only, the DM loading is designed to match that of the DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on the x8. ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#, and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ุ 0.8 × VDD and DC LOW ื 0.2 × VDDQ. RESET# assertion and desertion are asynchronous. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions (Continued) Symbol Type DQ[3:0] I/O Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are referenced to VREFDQ. DQ[7:0] I/O Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are referenced to VREFDQ. DQS, DQS# I/O Data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. TDQS, TDQS# Output Termination data strobe: Applies to the x8 configuration only. When TDQS is enabled, DM is disabled, and the TDQS and TDQS# balls provide termination resistance. VDD Supply Power supply: 1.5V ±0.075V. VDDQ Supply DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immunity. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference NC – No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). NF – No function: When configured as a x4 device, these balls are NF. When configured as a x8 device, these balls are defined as TDQS#, DQ[7:4]. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Description External reference ball for output drive calibration: This ball is tied to an external 240˖ resistor (RZQ), which is tied to VSSQ. 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 4: 96-Ball FBGA – x16 Ball Descriptions Symbol Type Description A[14:13], A12/BC#, A11, A10/AP, A[9:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 70 (page 118). BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle),or active power-down (row active in any bank). CKE is synchronous for powerdown entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. LDM Input Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte input data is masked when LDM is sampled HIGH along with the input data during a write access. Although the LDM ball is input-only, the LDM loading is designed to match that of the DQ and DQS balls. LDM is referenced to VREFDQ. ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#, UDQS, UDQS#, LDM, and UDM for the x16; DQ0[7:0], DQS, DQS#, DM/TDQS, and NF/TDQS# (when TDQS is enabled) for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ุ 0.8 × VDD and DC LOW ื 0.2 × VDDQ. RESET# assertion and desertion are asynchronous. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 4: 96-Ball FBGA – x16 Ball Descriptions (Continued) Symbol Type UDM Input DQ[7:0] I/O Data input/output: Lower byte of bidirectional data bus for the x16 configuration. DQ[7:0] are referenced to VREFDQ. DQ[15:8] I/O Data input/output: Upper byte of bidirectional data bus for the x16 configuration. DQ[15:8] are referenced to VREFDQ. LDQS, LDQS# I/O Lower byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. UDQS, UDQS# I/O Upper byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. DQS is center-aligned to write data. VDD Supply Power supply: 1.5V ±0.075V. VDDQ Supply DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immunity. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference NC – 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Description Input data mask: UDM is an upper-byte, input mask signal for write data. Upperbyte input data is masked when UDM is sampled HIGH along with that input data during a WRITE access. Although the UDM ball is input-only, the UDM loading is designed to match that of the DQ and DQS balls. UDM is referenced to VREFDQ. External reference ball for output drive calibration: This ball is tied to an external 240˖ resistor (RZQ), which is tied to VSSQ. No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Package Dimensions Figure 8: 78-Ball FBGA – x4, x8 (RH) 0.155 Seating plane A 78X Ø0.45 Dimensions apply to solder balls postreflow on Ø0.35 SMD ball pads. 0.12 A 1.8 CTR Nonconductive overmold Ball A1 ID (covered by SR) 9 8 7 3 2 Ball A1 ID 1 A B C D E F 10.5 ±0.1 G 9.6 CTR H J K L M N 0.8 TYP 0.8 TYP 1.1 ±0.1 6.4 CTR 0.25 MIN 9 ±0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 9: 78-Ball FBGA – x4, x8 (RG) 0.155 Seating plane A 0.12 A 1.8 CTR nonconductive overmold 78X Ø0.47 Dimensions apply to solder balls postreflow on Ø0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N 10.6 ±0.1 9.6 CTR 0.8 TYP 1.1 ±0.1 0.8 TYP 6.4 CTR 0.25 MIN 7.5 ±0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 10: 78-Ball FBGA – x4, x8 (DA) 0.155 Seating plane A 0.12 A 1.8 CTR Nonconductive overmold 78X Ø0.47 Dimensions apply to solder balls postreflow on Ø0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N 10.5 ±0.1 9.6 CTR 0.8 TYP 1.1 ±0.1 0.8 TYP 6.4 CTR 0.29 MIN 8 ±0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 11: 96-Ball FBGA – x16 (HA) 0.155 Seating plane 1.8 CTR Nonconductive overmold 96X Ø0.45 Dimensions apply to solder balls post-reflow on Ø0.35 SMD ball pads. 9 8 7 3 A 2 0.12 A Ball A1 Index (covered by SR) 1 Ball A1 Index A B C D E F G H 12 CTR J 14 ±0.1 K L M N P R 0.8 TYP T 0.8 TYP 1.1 ±0.1 6.4 CTR 0.25 MIN 9 ±0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). 26 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 12: 96-Ball FBGA – x16 (LY) 0.155 Seating plane A 0.12 A 1.8 CTR Nonconductive overmold 96X Ø0.47 Dimensions apply to solder balls postreflow on Ø0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N P R T 13.5 ±0.1 12 CTR 0.8 TYP 1.1 ±0.1 0.8 TYP 6.4 CTR 0.29 MIN 7.5 ±0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 13: 96-Ball FBGA – x16 (TW) 0.155 Seating plane 0.12 A A 1.8 CTR Nonconductive overmold 96X Ø0.47 Dimensions apply to solder balls postreflow on Ø0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N P R T 14 ±0.1 12 CTR 0.8 TYP 1.1 ±0.1 0.8 TYP 6.4 CTR 0.34 ±0.05 8 ±0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications Electrical Specifications Absolute Ratings Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 5: Absolute Maximum Ratings Symbol Parameter Min Max Unit Notes 1 VDD VDD supply voltage relative to VSS –0.4 1.975 V VDDQ VDD supply voltage relative to VSSQ –0.4 1.975 V VIN, VOUT Voltage on any pin relative to VSS –0.4 1.975 V 0 95 °C 2, 3 Operating case temperature – Industrial –40 95 °C 2, 3 Operating case temperature – Automotive –40 105 °C 2, 3 Storage temperature –55 150 °C TC TSTG Operating case temperature – Commercial Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be greater than 0.6 × VDDQ. When VDD and VDDQ are 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B must be derated by 2%; IDD2Px must be derated by 30%. Table 21: IDD Maximum Limits Die Rev. N for 1.35V/1.5V Operation Speed Bin Parameter DDR3/3L DDR3/3L DDR3/3L DDR3/3L DDR3/3L Units Notes -1066 -1333 -1600 -1866 -2133 Symbol Width Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE IDD1 x4, x8 42 45 47 49 51 mA 1, 2 x16 52 55 57 59 61 mA 1, 2 x4 50 53 56 59 62 mA 1, 2 x8 55 58 61 64 67 mA 1, 2 x16 75 78 81 84 87 mA 1, 2 Precharge power-down current: Slow exit IDD2P0 All 8 8 8 8 8 mA 1, 2 Precharge power-down current: Fast exit IDD2P1 All 10 12 14 16 18 mA 1, 2 Precharge quiet standby current IDD2Q All 20 22 24 26 28 mA 1, 2 Precharge standby current IDD2N All 20 22 24 26 28 mA 1, 2 Precharge standby ODT current IDD2NT x4, x8 24 26 28 30 32 mA 1, 2 x16 27 29 31 33 35 mA 1, 2 Active power-down current IDD3P All 22 24 26 28 30 mA 1, 2 Active standby current IDD3N x4, x8 26 28 30 32 34 mA 1, 2 x16 34 36 38 40 42 mA 1, 2 x4 65 75 85 95 105 mA 1, 2 x8 75 85 95 105 115 mA 1, 2 x16 135 145 155 165 175 mA 1, 2 x4 65 75 85 95 105 mA 1, 2 x8 75 85 95 105 115 mA 1, 2 x16 135 145 155 165 175 mA 1, 2 Burst read operating current IDD4R Burst write operating current IDD4W Burst refresh current IDD5B All 165 170 175 180 185 mA 1, 2 Room temperature self refresh IDD6 All 12 12 12 12 12 mA 1, 2, 3 Extended temperature self refresh IDD6ET All 16 16 16 16 16 mA All banks interleaved read current IDD7 x4, x8 110 120 130 140 150 mA Reset current IDD8 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. 2. 3. 4. 2, 4 1, 2 x16 170 180 190 200 210 mA 1, 2 All IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA mA 1, 2 TC = 85°C; SRT and ASR are disabled. Enabling ASR could increase IDDx by up to an additional 2mA. Restricted to TC (MAX) = 85°C. TC = 85°C; ASR and ODT are disabled; SRT is enabled. 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics – Operating IDD Specifications 5. The IDD values must be derated (increased) on IT-option devices when operated outside of the range 0°C ื TC ื 85°C: 5a. When TC < 0°C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%. 5b. When TC > 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B must be derated by 2%; IDD2Px must be derated by 30%. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics – Operating IDD Specifications Table 22: IDD Maximum Limits Die Rev. P for 1.35V/1.5V Operation Speed Bin Parameter Symbol Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE IDD1 Precharge power-down current: Slow exit IDD2P0 Precharge power-down current: Fast exit IDD2P1 Precharge quiet standby current IDD2Q Precharge standby current IDD2N Precharge standby ODT current IDD2NT Active power-down current IDD3P Active standby current IDD3N Burst read operating current IDD4R Burst write operating current IDD4W Burst refresh current IDD5B Self refresh IDD6 Extended temperature self refresh All banks interleaved read current Reset current IDD6ET IDD7 IDD8 Notes: 1. 2. 3. 4. 5. Width DDR3/3L -1600 DDR3/3L -1866 DDR3/3L -2133 x4, x8 28 29 31 X16 32 32 34 x4, x8 43 44 47 x16 45 46 54 x4, x8 10 11 12 x16 12 12 12 x4, x8 11 11 13 x16 12 12 14 Units Notes mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 ALL 15 15 17 x4, x8 16 17 22 x16 17 17 22 x4, x8 20 22 27 x16 22 23 28 x4,x8 15 15 17 x16 17 17 19 x4, x8 20 21 23 x16 22 23 25 x4, x8 90 90 110 x16 110 120 130 x4, x8 90 90 110 16 120 130 140 x4, x8 152 152 160 x16 156 156 160 ALL 15 15 15 mA 1, 2, 3 mA 2, 4 mA 1, 2 mA 1, 2 ALL 23 23 23 x4, x8 130 146 150 x16 132 147 160 All IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA TC = 85°C; SRT and ASR are disabled. Enabling ASR could increase IDDx by up to an additional 2mA. Restricted to TC (MAX) = 85°C. TC = 85°C; ASR and ODT are disabled; SRT is enabled. The IDD values must be derated (increased) on IT-option devices when operated outside of the range 0°C ื TC ื +85°C: 5a. When TC < 0°C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 47 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics – Operating IDD Specifications 5b. When TC > 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B must be derated by 2%; IDD2Px must be derated by 30%. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Electrical Specifications – DC and AC DC Operating Conditions Table 23: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions All voltages are referenced to VSS Parameter/Condition Symbol Min Nom Max Unit Notes Supply voltage VDD 1.283 1.35 1.45 V 1–7 I/O supply voltage VDDQ 1.283 1.35 1.45 V 1–7 II –2 – 2 μA IVREF –1 – 1 μA Input leakage current Any input 0V ื VIN ื VDD, VREF pin 0V ื VIN ื 1.1V (All other pins not under test = 0V) VREF supply leakage current VREFDQ = VDD/2 or VREFCA = VDD/2 (All other pins not under test = 0V) Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 8, 9 1. VDD and VDDQ must track one another. VDDQ must be ื VDD. VSS = VSSQ. 2. VDD and VDDQ may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC timing parameters. 3. Maximum DC value may not be greater than 1.425V. The DC value is the linear average of VDD/VDDQ(t) over a very long period of time (for example, 1 second). 4. Under these supply voltages, the device operates to this DDR3L specification. 5. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications. 6. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifications under the same speed timings as defined for this device. 7. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is in reset while VDD and VDDQ are changed for DDR3 operation (see VDD Voltage Switching (page 139)). 8. The minimum limit requirement is for testing purposes. The leakage current on the VREF pin should be minimal. 9. VREF (see Table 24). 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Input Operating Conditions Table 24: DDR3L 1.35V DC Electrical Characteristics and Input Conditions All voltages are referenced to VSS Parameter/Condition Symbol Min Nom Max Unit VIN low; DC/commands/address busses VIL VSS N/A See Table 25 V VIN high; DC/commands/address busses VIH See Table 25 N/A VDD V Notes Input reference voltage command/address bus VREFCA(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 1, 2 I/O reference voltage DQ bus VREFDQ(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 2, 3 I/O reference voltage DQ bus in SELF REFRESH VREFDQ(SR) VSS 0.5 × VDD VDD V 4 VTT – 0.5 × VDDQ – V 5 Command/address termination voltage (system level, not direct DRAM input) Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. VREFCA(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC level. Externally generated peak noise (non-common mode) on VREFCA may not exceed ±1% × VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not exceed ±2% of VREFCA(DC). 2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifications if the DRAM induces additional AC noise greater than 20 MHz in frequency. 3. VREFDQ(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC level. Externally generated peak noise (non-common mode) on VREFDQ may not exceed ±1% × VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not exceed ±2% of VREFDQ(DC). 4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH, within restrictions outlined in the SELF REFRESH section. 5. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors. Minimum and maximum values are system-dependent. 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Table 25: DDR3L 1.35V Input Switching Conditions – Command and Address Parameter/Condition Symbol DDR3L-800/1066 DDR3L-1333/1600 DDR3L-1866/2133 Units Command and Address 5 160 160 – mV VIH(AC135),min5 135 135 135 mV – – 125 mV VIH(DC90),min 90 90 90 mV Input low DC voltage: Logic 0 VIL(DC90),min –90 –90 –90 mV Input low AC voltage: Logic 0 VIL(AC125),min5 – – –125 mV VIL(AC135),min5 –135 –135 –135 mV 5 –160 –160 – mV Input high AC voltage: Logic 1 VIH(AC160),min VIH(AC125),min Input high DC voltage: Logic 1 VIL(AC160),min 5 DQ and DM Input high AC voltage: Logic 1 VIH(AC160),min5 160 160 – mV 5 135 135 135 mV 5 – – 130 mV VIH(AC135),min VIH(AC125),min Input high DC voltage: Logic 1 VIH(DC90),min 90 90 90 mV Input low DC voltage: Logic 0 VIL(DC90),min –90 –90 –90 mV Input low AC voltage: Logic 0 VIL(AC125),min5 – – –130 mV 5 –135 –135 –135 mV VIL(AC160),min5 –160 –160 – mV VIL(AC135),min Notes: 1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ and DM inputs. 2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC). 3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC). 4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is 900mV (peak-to-peak). 5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific speed bin, the user may choose either value for the input AC level. Whichever value is used, the associated setup time for that AC level must also be used. Additionally, one VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may be used for data inputs. For example, for DDR3-800, two input AC levels are defined: VIH(AC160),min and VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDR3-800, the address/ command inputs must use either VIH(AC160),min with tIS(AC160) of 210ps or VIH(AC150),min with tIS(AC135) of 365ps; independently, the data inputs must use either VIH(AC160),min with tDS(AC160) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Table 26: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) Parameter/Condition Symbol Min Max Units Notes Differential input logic high – slew VIH,diff(AC)slew 180 N/A mV 4 Differential input logic low – slew VIL,diff(AC)slew N/A –180 mV 4 Differential input logic high VIH,diff(AC) 2 × (VIH(AC) - VREF) VDD/VDDQ mV 5 Differential input logic low VIL,diff(AC) VSS/VSSQ 2 × (VIL(AC) - VREF) mV 6 VIX VREF(DC) - 150 VREF(DC) + 150 mV 5, 7, 9 VIX (175) VREF(DC) - 175 VREF(DC) + 175 mV 5, 7–9 VDDQ/2 + 160 VDDQ mV 5 VDD/2 + 160 VDD mV 5 VSSQ VDDQ/2 - 160 mV 6 VSS VDD/2 - 160 mV 6 Differential input crossing voltage relative to VDD/2 for DQS, DQS#; CK, CK# Differential input crossing voltage relative to VDD/2 for CK, CK# Single-ended high level for strobes Single-ended high level for CK, CK# Single-ended low level for strobes Single-ended low level for CK, CK# Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN VSEH VSEL Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ. Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe. Differential input slew rate = 2 V/ns. Defines slew rate reference points, relative to input crossing voltages. Minimum DC limit is relative to single-ended signals; overshoot specifications are applicable. Maximum DC limit is relative to single-ended signals; undershoot specifications are applicable. The typical value of VIX(AC) is expected to be about 0.5 × VDD of the transmitting device, and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which differential input signals must cross. The VIX extended range (±175mV) is allowed only for the clock; this VIX extended range is only allowed when the following conditions are met: The single-ended input signals are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 ±250mV, and the differential slew rate of CK, CK# is greater than 3 V/ns. VIX must provide 25mV (single-ended) of the voltages separation. 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Figure 15: DDR3L 1.35V Input Signal VIL and VIH levels with ringback VDDQ + 0.4V Overshoot VDD + 0.4V Narrow pulse width Minimum VIL and VIH levels VIH MIN(AC) VIH MIN(DC) VIH(AC) VIH(DC) VIL MIN(AC) VDDQ VREF + 125/135/160mV VIH(AC) VREF + 90mV VIH(DC) VREF DC MAX + 1% .51 x VDD VREF = VDD/2 .49 x VDD VREF DC MIN - 1% VDD MAX 2% Total VREF DC MAX VREF DC MIN MAX 2% Total VIL MIN(DC) VDD VIL(DC) VREFDQ + AC noise VREFDQ + DC error VREFDQ - DC error VREFDQ - AC noise VREF - 90mV VIL(DC) VREF - 125/135/160mV VIL(AC) VIL(AC) 0.0V VSS VSS - 0.40V Undershoot VSS - 0.40V Narrow pulse width Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. Numbers in diagrams reflect nominal values. 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC DDR3L 1.35V AC Overshoot/Undershoot Specification Table 27: DDR3L Control and Address Pins Parameter DDR3L-800 DRR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866 DDR3L-2133 Maximum peak amplitude allowed for overshoot area (see Figure 16) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum peak amplitude allowed for undershoot area (see Figure 17) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum overshoot area above VDD (see Figure 16) 0.67 V/ns 0.5 V/ns 0.4 V/ns 0.33 V/ns 0.28 V/ns 0.25 V/ns Maximum undershoot area below VSS (see Figure 17) 0.67 V/ns 0.5 V/ns 0.4 V/ns 0.33 V/ns 0.28 V/ns 0.25 V/ns Table 28: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins Parameter DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866 DDR3L-2133 Maximum peak amplitude allowed for overshoot area (see Figure 16) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum peak amplitude allowed for undershoot area (see Figure 17) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum overshoot area above VDD/VDDQ (see Figure 16) 0.25 V/ns 0.19 V/ns 0.15 V/ns 0.13 V/ns 0.11 V/ns 0.10 V/ns Maximum undershoot area below VSS/VSSQ (see Figure 17) 0.25 V/ns 0.19 V/ns 0.15 V/ns 0.13 V/ns 0.11 V/ns 0.10 V/ns Figure 16: Overshoot Maximum amplitude Overshoot area Volts (V) VDD/VDDQ Time (ns) 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Figure 17: Undershoot VSS/VSSQ Volts (V) Undershoot area Maximum amplitude Time (ns) Figure 18: VIX for Differential Signals VDD, VDDQ VDD, VDDQ CK#, DQS# CK#, DQS# X VIX VIX VDD/2, VDDQ/2 X X VDD/2, VDDQ/2 VIX X VIX CK, DQS CK, DQS VSS, VSSQ VSS, VSSQ Figure 19: Single-Ended Requirements for Differential Signals VDD or VDDQ VSEH,min VDD/2 or VDDQ/2 VSEH CK or DQS VSEL,max VSEL VSS or VSSQ 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications – DC and AC Figure 20: Definition of Differential AC-Swing and tDVAC tDVAC VIH,diff(AC)min VIH,diff,min CK - CK# DQS - DQS# 0.0 VIL,diff,max VIL,diff(AC)max tDVAC Half cycle Table 29: DDR3L 1.35V – Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback DDR3L-800/1066/1333/1600 tDVAC tDVAC DDR3L-1866/2133 tDVAC tDVAC tDVAC Slew Rate (V/ns) at 320mV (ps) at 270mV (ps) at 270mV (ps) at 250mV (ps) at 260mV (ps) >4.0 189 201 163 168 176 4.0 189 201 163 168 176 3.0 162 179 140 147 154 2.0 109 134 95 105 111 1.8 91 119 80 91 97 1.6 69 100 62 74 78 1.4 40 76 37 52 55 1.2 Note 1 44 5 22 24 1.0 Note 1