MT47H256M4

1Gb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • • • • • • • • • • • • • • • • • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V JEDEC-standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option 4n-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency - 1 tCK Selectable burst lengths (BL): 4 or 8 Adjustable data-output drive strength 64ms, 8192-cycle refresh On-die termination (ODT) Industrial temperature (IT) option RoHS-compliant Supports JEDEC clock jitter specification Options1 • Configuration – 256 Meg x 4 (32 Meg x 4 x 8 banks) – 128 Meg x 8 (16 Meg x 8 x 8 banks) – 64 Meg x 16 (8 Meg x 16 x 8 banks) • FBGA package (Pb-free) – x16 – 84-ball FBGA (8mm x 12.5mm) Rev. G, H • FBGA package (Pb-free) – x4, x8 – 60-ball FBGA (8mm x 11.5mm) Rev. G • FBGA package (Pb-free) – x4, x8 – 60-ball FBGA (8mm x 10mm) Rev. H • FBGA package (lead solder) – x16 – 84-ball FBGA (8mm x 12.5mm) Rev. G, H • FBGA package (lead solder) – x4, x8 – 60-ball FBGA (8mm x 11.5mm) Rev. G • FBGA package (lead solder) – x4, x8 – 60-ball FBGA (8mm x 10mm) Rev. H • Timing – cycle time – 1.875ns @ CL = 7 (DDR2-1066) – 2.5ns @ CL = 5 (DDR2-800) – 2.5ns @ CL = 6 (DDR2-800) – 3.0ns @ CL = 4 (DDR2-667) – 3.0ns @ CL = 5 (DDR2-667) – 3.75ns @ CL = 4 (DDR2-533) • Self refresh – Standard – Low-power • Operating temperature – Commercial (0°C ≤ TC ≤ 85°C) – Industrial (–40°C ≤ TC ≤ 95°C; –40°C ≤ TA ≤ 85°C) – Automotive (–40°C ≤ TC , TA ≤ 105ºC) • Revision Note: Marking 256M4 128M8 64M16 HR HQ CF HW HV JN -187E -25E -25 -3E -3 -37E None L None IT AT :G/:H 1. Not all options listed can be combined to define an offered product. Use the Part Catalog Search on www.micron.com for product offerings and availability. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Features Table 1: Key Timing Parameters Data Rate (MT/s) Speed Grade -187E -25E -25 -3E -3 -37E CL = 3 400 400 400 400 400 400 CL = 4 533 533 533 667 533 533 CL = 5 667 800 667 667 667 n/a CL = 6 800 800 800 n/a n/a n/a CL = 7 1066 n/a n/a n/a n/a n/a tRC (ns) 54 55 55 54 55 55 Table 2: Addressing Parameter Configuration Refresh count Row address Bank address Column address 256 Meg x 4 32 Meg x 4 x 8 banks 8K A[13:0] (16K) BA[2:0] (8) A[11, 9:0] (2K) 128 Meg x 8 16 Meg x 8 x 8 banks 8K A[13:0] (16K) BA[2:0] (8) A[9:0] (1K) 64 Meg x 16 8 Meg x 16 x 8 banks 8K A[12:0] (8K) BA[2:0] (8) A[9:0] (1K) PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Features Figure 1: 1Gb DDR2 Part Numbers Example Part Number: MT47H128M8HQ-37E MT47H Configuration Package Speed : Revision { :G/:H Configuration 256 Meg x 4 128 Meg x 8 64 Meg x 16 Package Pb-free 84-ball 8mm x 12.5mm FBGA 60-ball 8mm x 11.5mm FBGA 60-ball 8mm x 10.0mm FBGA Lead solder 84-ball 8mm x 12.5mm FBGA 60-ball 8mm x 10mm FBGA 60-ball 8mm x 11.5mm FBGA HW JN HV HR HQ CF 256M4 128M8 64M16 -187E -25E -25 -3E -3 -37E Speed Grade tCK = 1.875ns, CL = 7 tCK = 2.5ns, CL = 5 tCK = 2.5ns, CL = 6 tCK = 3ns, CL = 4 tCK = 3ns, CL = 5 tCK = 3.75ns, CL = 4 Revision L Low power IT Industrial temperature AT Automotive temperature Note: 1. Not all speeds and configurations are available in all packages. FBGA Part Number System Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM State Diagram .................................................................................................................................................. 9 Functional Description ................................................................................................................................... 10 Industrial Temperature .............................................................................................................................. 10 Automotive Temperature ........................................................................................................................... 11 General Notes ............................................................................................................................................ 11 Functional Block Diagrams ............................................................................................................................. 12 Ball Assignments and Descriptions ................................................................................................................. 15 Packaging ...................................................................................................................................................... 19 Package Dimensions .................................................................................................................................. 19 FBGA Package Capacitance ......................................................................................................................... 22 Electrical Specifications – Absolute Ratings ..................................................................................................... 23 Temperature and Thermal Impedance ........................................................................................................ 23 Electrical Specifications – IDD Parameters ........................................................................................................ 26 IDD Specifications and Conditions ............................................................................................................... 26 IDD7 Conditions .......................................................................................................................................... 27 AC Timing Operating Specifications ................................................................................................................ 31 AC and DC Operating Conditions .................................................................................................................... 41 ODT DC Electrical Characteristics ................................................................................................................... 42 Input Electrical Characteristics and Operating Conditions ............................................................................... 43 Output Electrical Characteristics and Operating Conditions ............................................................................. 46 Output Driver Characteristics ......................................................................................................................... 48 Power and Ground Clamp Characteristics ....................................................................................................... 52 AC Overshoot/Undershoot Specification ......................................................................................................... 53 Input Slew Rate Derating ................................................................................................................................ 55 Commands .................................................................................................................................................... 68 Truth Tables ............................................................................................................................................... 68 DESELECT ................................................................................................................................................. 72 NO OPERATION (NOP) .............................................................................................................................. 73 LOAD MODE (LM) ..................................................................................................................................... 73 ACTIVATE .................................................................................................................................................. 73 READ ......................................................................................................................................................... 73 WRITE ....................................................................................................................................................... 73 PRECHARGE .............................................................................................................................................. 74 REFRESH ................................................................................................................................................... 74 SELF REFRESH ........................................................................................................................................... 74 Mode Register (MR) ........................................................................................................................................ 74 Burst Length .............................................................................................................................................. 75 Burst Type ................................................................................................................................................. 76 Operating Mode ......................................................................................................................................... 76 DLL RESET ................................................................................................................................................. 76 Write Recovery ........................................................................................................................................... 77 Power-Down Mode .................................................................................................................................... 77 CAS Latency (CL) ........................................................................................................................................ 78 Extended Mode Register (EMR) ....................................................................................................................... 79 DLL Enable/Disable ................................................................................................................................... 80 Output Drive Strength ................................................................................................................................ 80 DQS# Enable/Disable ................................................................................................................................. 80 RDQS Enable/Disable ................................................................................................................................. 80 Output Enable/Disable ............................................................................................................................... 80 On-Die Termination (ODT) ........................................................................................................................ 81 Contents PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Off-Chip Driver (OCD) Impedance Calibration ............................................................................................ 81 Posted CAS Additive Latency (AL) ............................................................................................................... 81 Extended Mode Register 2 (EMR2) .................................................................................................................. 83 Extended Mode Register 3 (EMR3) .................................................................................................................. 84 Initialization .................................................................................................................................................. 85 ACTIVATE ...................................................................................................................................................... 88 READ ............................................................................................................................................................. 90 READ with Precharge ................................................................................................................................. 94 READ with Auto Precharge .......................................................................................................................... 96 WRITE .......................................................................................................................................................... 101 PRECHARGE ................................................................................................................................................. 111 REFRESH ...................................................................................................................................................... 112 SELF REFRESH .............................................................................................................................................. 113 Power-Down Mode ....................................................................................................................................... 115 Precharge Power-Down Clock Frequency Change .......................................................................................... 122 Reset ............................................................................................................................................................. 123 CKE Low Anytime ...................................................................................................................................... 123 ODT Timing .................................................................................................................................................. 125 MRS Command to ODT Update Delay ........................................................................................................ 127 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Table 1: Key Timing Parameters ...................................................................................................................... 2 Table 2: Addressing ......................................................................................................................................... 2 Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions .......................................................................... 17 Table 4: Input Capacitance ............................................................................................................................ 22 Table 5: Absolute Maximum DC Ratings ........................................................................................................ 23 Table 6: Temperature Limits .......................................................................................................................... 24 Table 7: Thermal Impedance ......................................................................................................................... 25 Table 8: General IDD Parameters .................................................................................................................... 26 Table 9: IDD7 Timing Patterns (8-Bank Interleave READ Operation) ................................................................. 27 Table 10: DDR2 IDD Specifications and Conditions (Die Revisions E, G, and H) ................................................ 28 Table 11: AC Operating Specifications and Conditions .................................................................................... 31 Table 12: Recommended DC Operating Conditions (SSTL_18) ........................................................................ 41 Table 13: ODT DC Electrical Characteristics ................................................................................................... 42 Table 14: Input DC Logic Levels ..................................................................................................................... 43 Table 15: Input AC Logic Levels ..................................................................................................................... 43 Table 16: Differential Input Logic Levels ........................................................................................................ 44 Table 17: Differential AC Output Parameters .................................................................................................. 46 Table 18: Output DC Current Drive ................................................................................................................ 46 Table 19: Output Characteristics .................................................................................................................... 47 Table 20: Full Strength Pull-Down Current (mA) ............................................................................................ 48 Table 21: Full Strength Pull-Up Current (mA) ................................................................................................. 49 Table 22: Reduced Strength Pull-Down Current (mA) ..................................................................................... 50 Table 23: Reduced Strength Pull-Up Current (mA) .......................................................................................... 51 Table 24: Input Clamp Characteristics ........................................................................................................... 52 Table 25: Address and Control Balls ............................................................................................................... 53 Table 26: Clock, Data, Strobe, and Mask Balls ................................................................................................. 53 Table 27: AC Input Test Conditions ................................................................................................................ 54 Table 28: DDR2-400/533 Setup and Hold Time Derating Values (tIS and tIH) ................................................... 56 Table 29: DDR2-667/800/1066 Setup and Hold Time Derating Values (tIS and tIH) .......................................... 57 Table 30: DDR2-400/533 tDS, tDH Derating Values with Differential Strobe ..................................................... 60 Table 31: DDR2-667/800/1066 tDS, tDH Derating Values with Differential Strobe ............................................ 61 Table 32: Single-Ended DQS Slew Rate Derating Values Using tDSb and tDHb . ................................................. 62 Table 33: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-667 ..................................... 62 Table 34: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-533 ..................................... 63 Table 35: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-400 ..................................... 63 Table 36: Truth Table – DDR2 Commands ..................................................................................................... 68 Table 37: Truth Table – Current State Bank n – Command to Bank n . .............................................................. 69 Table 38: Truth Table – Current State Bank n – Command to Bank m . ............................................................. 71 Table 39: Minimum Delay with Auto Precharge Enabled ................................................................................. 72 Table 40: Burst Definition .............................................................................................................................. 76 Table 41: READ Using Concurrent Auto Precharge ......................................................................................... 96 Table 42: WRITE Using Concurrent Auto Precharge ....................................................................................... 102 Table 43: Truth Table – CKE ......................................................................................................................... 117 List of Tables PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Figure 1: 1Gb DDR2 Part Numbers ................................................................................................................... 3 Figure 2: Simplified State Diagram ................................................................................................................... 9 Figure 3: 256 Meg x 4 Functional Block Diagram ............................................................................................. 12 Figure 4: 128 Meg x 8 Functional Block Diagram ............................................................................................. 13 Figure 5: 64 Meg x 16 Functional Block Diagram ............................................................................................. 14 Figure 6: 60-Ball FBGA – x4, x8 Ball Assignments (Top View) ........................................................................... 15 Figure 7: 84-Ball FBGA – x16 Ball Assignments (Top View) .............................................................................. 16 Figure 8: 84-Ball FBGA Package (8mm x 12.5mm) – x16 ................................................................................... 19 Figure 9: 60-Ball FBGA Package (8mm x 11.5mm) – x4, x8 ............................................................................... 20 Figure 10: 60-Ball FBGA (8mm x 10mm) – x4, x8 ............................................................................................. 21 Figure 11: Example Temperature Test Point Location ..................................................................................... 24 Figure 12: Single-Ended Input Signal Levels ................................................................................................... 43 Figure 13: Differential Input Signal Levels ...................................................................................................... 44 Figure 14: Differential Output Signal Levels .................................................................................................... 46 Figure 15: Output Slew Rate Load .................................................................................................................. 47 Figure 16: Full Strength Pull-Down Characteristics ......................................................................................... 48 Figure 17: Full Strength Pull-Up Characteristics ............................................................................................. 49 Figure 18: Reduced Strength Pull-Down Characteristics ................................................................................. 50 Figure 19: Reduced Strength Pull-Up Characteristics ...................................................................................... 51 Figure 20: Input Clamp Characteristics .......................................................................................................... 52 Figure 21: Overshoot ..................................................................................................................................... 53 Figure 22: Undershoot .................................................................................................................................. 53 Figure 23: Nominal Slew Rate for tIS .............................................................................................................. 58 Figure 24: Tangent Line for tIS ....................................................................................................................... 58 Figure 25: Nominal Slew Rate for tIH .............................................................................................................. 59 Figure 26: Tangent Line for tIH ...................................................................................................................... 59 Figure 27: Nominal Slew Rate for tDS ............................................................................................................. 64 Figure 28: Tangent Line for tDS ...................................................................................................................... 64 Figure 29: Nominal Slew Rate for tDH ............................................................................................................ 65 Figure 30: Tangent Line for tDH ..................................................................................................................... 65 Figure 31: AC Input Test Signal Waveform Command/Address Balls ............................................................... 66 Figure 32: AC Input Test Signal Waveform for Data with DQS, DQS# (Differential) ........................................... 66 Figure 33: AC Input Test Signal Waveform for Data with DQS (Single-Ended) .................................................. 67 Figure 34: AC Input Test Signal Waveform (Differential) ................................................................................. 67 Figure 35: MR Definition ............................................................................................................................... 75 Figure 36: CL ................................................................................................................................................ 78 Figure 37: EMR Definition ............................................................................................................................. 79 Figure 38: READ Latency ............................................................................................................................... 82 Figure 39: WRITE Latency ............................................................................................................................. 82 Figure 40: EMR2 Definition ........................................................................................................................... 83 Figure 41: EMR3 Definition ........................................................................................................................... 84 Figure 42: DDR2 Power-Up and Initialization ................................................................................................. 85 Figure 43: Example: Meeting tRRD (MIN) and tRCD (MIN) .............................................................................. 88 Figure 44: Multibank Activate Restriction ....................................................................................................... 89 Figure 45: READ Latency ............................................................................................................................... 91 Figure 46: Consecutive READ Bursts .............................................................................................................. 92 Figure 47: Nonconsecutive READ Bursts ........................................................................................................ 93 Figure 48: READ Interrupted by READ ........................................................................................................... 94 Figure 49: READ-to-WRITE ............................................................................................................................ 94 Figure 50: READ-to-PRECHARGE – BL = 4 ...................................................................................................... 95 List of Figures PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Figure 51: Figure 52: Figure 53: Figure 54: Figure 55: Figure 56: Figure 57: Figure 58: Figure 59: Figure 60: Figure 61: Figure 62: Figure 63: Figure 64: Figure 65: Figure 66: Figure 67: Figure 68: Figure 69: Figure 70: Figure 71: Figure 72: Figure 73: Figure 74: Figure 75: Figure 76: Figure 77: Figure 78: Figure 79: Figure 80: Figure 81: Figure 82: Figure 83: Figure 84: Figure 85: Figure 86: Figure 87: READ-to-PRECHARGE – BL = 8 ...................................................................................................... 95 Bank Read – Without Auto Precharge ............................................................................................. 97 Bank Read – with Auto Precharge ................................................................................................... 98 x4, x8 Data Output Timing – tDQSQ, tQH, and Data Valid Window .................................................. 99 x16 Data Output Timing – tDQSQ, tQH, and Data Valid Window ..................................................... 100 Data Output Timing – tAC and tDQSCK ......................................................................................... 101 Write Burst ................................................................................................................................... 103 Consecutive WRITE-to-WRITE ...................................................................................................... 104 Nonconsecutive WRITE-to-WRITE ................................................................................................ 104 WRITE Interrupted by WRITE ....................................................................................................... 105 WRITE-to-READ ........................................................................................................................... 106 WRITE-to-PRECHARGE ................................................................................................................ 107 Bank Write – Without Auto Precharge ............................................................................................ 108 Bank Write – with Auto Precharge ................................................................................................. 109 WRITE – DM Operation ................................................................................................................ 110 Data Input Timing ........................................................................................................................ 111 Refresh Mode ............................................................................................................................... 112 Self Refresh .................................................................................................................................. 114 Power-Down ................................................................................................................................ 116 READ-to-Power-Down or Self Refresh Entry .................................................................................. 118 READ with Auto Precharge-to-Power-Down or Self Refresh Entry .................................................. 118 WRITE-to-Power-Down or Self Refresh Entry ................................................................................ 119 WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry ................................................. 119 REFRESH Command-to-Power-Down Entry ................................................................................. 120 ACTIVATE Command-to-Power-Down Entry ................................................................................ 120 PRECHARGE Command-to-Power-Down Entry ............................................................................ 121 LOAD MODE Command-to-Power-Down Entry ............................................................................ 121 Input Clock Frequency Change During Precharge Power-Down Mode ........................................... 122 RESET Function ........................................................................................................................... 124 ODT Timing for Entering and Exiting Power-Down Mode .............................................................. 126 Timing for MRS Command to ODT Update Delay .......................................................................... 127 ODT Timing for Active or Fast-Exit Power-Down Mode ................................................................. 127 ODT Timing for Slow-Exit or Precharge Power-Down Modes ......................................................... 128 ODT Turn-Off Timings When Entering Power-Down Mode ............................................................ 128 ODT Turn-On Timing When Entering Power-Down Mode ............................................................. 129 ODT Turn-Off Timing When Exiting Power-Down Mode ............................................................... 130 ODT Turn-On Timing When Exiting Power-Down Mode ................................................................ 131 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM State Diagram State Diagram Figure 2: Simplified State Diagram Initialization sequence OCD default PRE CKE_L Self refreshing SR C H KE_ REFRESH Refreshing Setting MRS EMRS (E)MRS Idle all banks precharged CK E_ H CK E_ L CK E_ L Precharge powerdown CKE_L Automatic Sequence Command Sequence ACT ACT = ACTIVATE CKE_H = CKE HIGH, exit power-down or self refresh CKE_L = CKE LOW, enter power-down (E)MRS = (Extended) mode register set PRE = PRECHARGE PRE_A = PRECHARGE ALL READ = READ READ A = READ with auto precharge REFRESH = REFRESH SR = SELF REFRESH WRITE = WRITE WRITE A = WRITE with auto precharge CKE_L Active powerdown CKE _L Activating CK CKE_ E_L H Bank active W EA WRITE RIT E RE AD READ RE AD W RIT A Reading Writing WRITE READ REA DA ITE WR A READ A WRITE A Writing with auto precharge E_ A Precharging Note: 1. This diagram provides the basic command flow. It is not comprehensive and does not identify all timing requirements or possible command restrictions such as multibank interaction, power down, entry/exit, etc. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN PR E 9 , PR PR E, PR E_ A PRE, PRE_A Reading with auto precharge Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Functional Description Functional Description The DDR2 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single read or write access for the DDR2 SDRAM effectively consists of a single 4n-bit-wide, oneclock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. The x16 offering has two data strobes, one for the lower byte (LDQS, LDQS#) and one for the upper byte (UDQS, UDQS#). The DDR2 SDRAM operates from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS as well as to both edges of CK. Read and write accesses to the DDR2 SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access. The DDR2 SDRAM provides for programmable read or write burst lengths of four or eight locations. DDR2 SDRAM supports interrupting a burst read of eight with another read or a burst write of eight with another write. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard DDR SDRAM, the pipelined, multibank architecture of DDR2 SDRAM enables concurrent operation, thereby providing high, effective bandwidth by hiding row precharge and activation time. A self refresh mode is provided, along with a power-saving, power-down mode. All inputs are compatible with the JEDEC standard for SSTL_18. All full drive-strength outputs are SSTL_18-compatible. Industrial Temperature The industrial temperature (IT) option, if offered, has two simultaneous requirements: ambient temperature surrounding the device cannot be less than –40°C or greater than +85°C, and the case temperature cannot be less than –40°C or greater than +95°C. JEDEC specifications require the refresh rate to double when TC exceeds +85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when TC is < 0°C or > +85°C. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Functional Description Automotive Temperature The automotive temperature (AT) option, if offered, has two simultaneous requirements: ambient temperature surrounding the device cannot be less than –40°C or greater than +105°C, and the case temperature cannot be less than –40°C or greater than +105°C. JEDEC specifications require the refresh rate to double when TC exceeds +85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when TC is < 0°C or > +85°C. General Notes • The functionality and the timing specifications discussed in this data sheet are for the DLL-enabled mode of operation. • Throughout the data sheet, the various figures and text refer to DQs as “DQ.” The DQ term is to be interpreted as any and all DQ collectively, unless specifically stated otherwise. Additionally, the x16 is divided into 2 bytes: the lower byte and the upper byte. For the lower byte (DQ0–DQ7), DM refers to LDM and DQS refers to LDQS. For the upper byte (DQ8–DQ15), DM refers to UDM and DQS refers to UDQS. • Complete functionality is described throughout the document, and any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. • Any specific requirement takes precedence over a general statement. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Functional Block Diagrams Functional Block Diagrams The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory. It is internally configured as a multibank DRAM. Figure 3: 256 Meg x 4 Functional Block Diagram ODT CKE CK CK# CS# RAS# CAS# WE# Command decode Control logic Bank 7 Bank 7 Bank 6 Bank 6 Bank 5 Bank 5 Bank 4 Bank 4 Bank 3 Bank 3 Bank 2 Bank 2 Bank 1 Bank 1 Bank 0 Bank 0 rowMemory array address latch 16,384 (16,384 x 512 x 16) and decoder Sense amplifiers 8,192 16 1 A0–A13, BA0–BA2 17 Address register 2 3 Bank control logic I/O gating DM mask logic 512 (x16) Column decoder CK, CK# WRITE FIFO 16 and drivers CK out CK in 4 Mask COL0, COL1 4 4 16 Read latch 4 4 MUX 4 DATA CK, CK# DLL ODT control Vdd Q sw1 sw2 sw3 sw1 sw2 sw3 R2 R2 R3 R3 DQ0–DQ3 14 Refresh 14 counter 14 Rowaddress MUX Mode registers 17 DRVRS 2 R1 R1 DQS generator Input registers DQS, DQS# 1 1 1 1 4 4 4 4 2 Vss Q 4 sw1 R1 R1 sw2 sw3 R2 R2 R3 R3 DM 1 RCVRS sw1 R1 R1 sw2 sw3 R2 R2 R3 R3 DQS, DQS# 1 1 1 4 11 Columnaddress counter/ latch 9 2 Data 16 4 4 4 COL0, COL1 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Functional Block Diagrams Figure 4: 128 Meg x 8 Functional Block Diagram ODT CKE CK CK# CS# RAS# CAS# WE# Command decode Control logic Bank 7 Bank 7 Bank 6 Bank 6 Bank 5 Bank 5 Bank 4 Bank 4 Bank 3 Bank 3 Bank 2 Bank 2 Bank 1 Bank 1 Bank 0 Bank 0 rowMemory array address latch 16,384 (16,384 x 256 x 32) and decoder Sense amplifers 8,192 32 COL0, COL1 8 8 32 Read latch 8 8 MUX 8 Data CK, CK# DLL ODT control Vdd Q sw1 sw2 sw3 sw1 sw2 sw3 R2 R2 R3 R3 DQ0–DQ7 14 Refresh 14 counter 14 Rowaddress MUX Mode registers 17 DRVRS 2 R1 R1 DQS generator UDQS, UDQS# Input LDQS, LDQS# registers 2 2 2 2 2 8 2 2 2 8 8 8 8 2 8 2 RCVRS sw1 R1 R1 sw2 sw3 R2 R2 R3 R3 DQS, DQS# RDQS# A0–A13, BA0–BA2 17 Address register 2 3 Bank control logic I/O gating DM mask logic 256 (x32) Column decoder CK,CK# WRITE FIFO 32 and drivers CK out CK in 4 Mask 10 Columnaddress counter/ latch 8 2 Data 32 8 8 8 sw1 R1 R1 sw2 sw3 R2 R2 R3 R3 RDQS DM COL0, COL1 Vss Q PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Functional Block Diagrams Figure 5: 64 Meg x 16 Functional Block Diagram ODT CKE CK CK# CS# RAS# CAS# WE# Command decode Control logic 13 Mode registers 16 Refresh 13 counter 13 Rowaddress MUX Bank 7 Bank 7 Bank 6 Bank 6 Bank 5 Bank 5 Bank 4 Bank 4 Bank 3 Bank 3 Bank 2 Bank 2 Bank 1 Bank 1 Bank 0 Bank 0 rowMemory array address latch 8,192 (8,192 x 256 x 64) and decoder Sense amplifier 16,384 64 COL0, COL1 16 16 64 Read latch 16 16 16 MUX DATA DQS generator 4 CK, CK# DLL ODT control Vdd Q sw1 sw2 sw3 sw1 sw2 sw3 R2 R2 R3 R3 DQ0–DQ15 DRVRS R1 R1 UDQS, UDQS# Input LDQS, LDQS# registers 2 2 2 2 2 2 16 16 16 16 16 4 2 RCVRS sw1 R1 R1 sw2 sw3 R2 R2 R3 R3 UDQS, UDQS# LDQS, LDQS# A0–A12, BA0–BA2 16 Address register 2 3 Bank control logic I/O gating DM mask logic 256 (x64) Column decoder CK, CK# 8 WRITE 2 FIFO Mask 2 64 and drivers 16 CK out CK in 64 16 16 16 COL0, COL1 sw1 R1 R1 sw2 sw3 R2 R2 R3 R3 UDM, LDM 10 Columnaddress counter/ latch 8 2 Data Vss Q PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Ball Assignments and Descriptions Ball Assignments and Descriptions Figure 6: 60-Ball FBGA – x4, x8 Ball Assignments (Top View) 1 A B C D E F G H J K L VDD VSS BA2 VDD 2 3 VSS 4 5 6 7 8 9 NC, RDQS#/NU VSSQ DQS#/NU VDDQ DQS VDDQ DQ2 VSSDL RAS# CAS# A2 A6 A11 RFU VSSQ NF, DQ7 DQ0 VDDQ NF, DQ6 VSSQ DM, DM/RDQS VDDQ DQ1 VDDQ DQ3 VSS WE# BA1 A1 A5 A9 RFU NF, DQ4 VSSQ VSSQ NF, DQ5 CK CK# CS# A0 A4 A8 A13 VSS VDD VDD ODT VDDL VREF CKE BA0 A10 A3 A7 A12 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Ball Assignments and Descriptions Figure 7: 84-Ball FBGA – x16 Ball Assignments (Top View) 1 A B C D E F G H J K L M 2 3 4 5 6 7 8 9 VDD DQ14 VDDQ DQ12 VDD DQ6 VDDQ DQ4 VDDL NC VSSQ DQ9 VSSQ NC VSSQ DQ1 VSSQ VREF CKE VSS UDM VDDQ DQ11 VSS LDM VDDQ DQ3 VSS WE# BA1 A1 A5 A9 RFU VSSQ UDQS VDDQ DQ10 VSSQ LDQS VDDQ DQ2 VSSDL RAS# CAS# A2 A6 A11 RFU UDQS#/NU VDDQ VSSQ DQ8 VSSQ LDQS#/NU DQ15 VDDQ DQ13 VDDQ DQ7 VDDQ DQ5 VDD ODT VSSQ DQ0 VSSQ CK CK# CS# A0 A4 A8 RFU BA2 BA0 A10 N P R VDD A12 VSS A3 A7 VDD VSS PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Ball Assignments and Descriptions Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions Symbol A[12:0] (x16) ,A[13:0] (x4, x8) Type Input Description Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0] or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Bank address inputs: BA[2:0] define to which bank an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register, including MR, EMR, EMR(2), and EMR(3), is loaded during the LOAD MODE command. Clock: CK and CK# are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK#. Output data (DQ and DQS/DQS#) is referenced to the crossings of CK and CK#. Clock enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates clocking circuitry on the DDR2 SDRAM. The specific circuitry that is enabled/disabled is dependent on the DDR2 SDRAM configuration and operating mode. CKE LOW provides precharge power-down and SELF REFRESH operations (all banks idle), or ACTIVATE powerdown (row active in any bank). CKE is synchronous for power-down entry, power-down exit, output disable, and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, and ODT) are disabled during power-down. Input buffers (excluding CKE) are disabled during self refresh. CKE is an SSTL_18 input but will detect a LVCMOS LOW level after VDD is applied during first power-up. After VREF has become stable during the power-on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper SELF REFRESH operation, VREF must be maintained. Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered high. CS# provides for external bank selection on systems with multiple ranks. CS# is considered part of the command code. Input data mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM balls are input-only, the DM loading is designed to match that of DQ and DQS balls. LDM is DM for lower byte DQ[7:0] and UDM is DM for upper byte DQ[15:8]. On-die termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When enabled, ODT is only applied to each of the following balls: DQ[15:0], LDM, UDM, LDQS, LDQS#, UDQS, and UDQS# for the x16; DQ[7:0], DQS, DQS#, RDQS, RDQS#, and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input will be ignored if disabled via the LOAD MODE command. Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered. Data input/output: Bidirectional data bus for 64 Meg x 16. Bidirectional data bus for 256 Meg x 4. Bidirectional data bus for 128 Meg x 8. BA[2:0] Input CK, CK# Input CKE Input CS# Input LDM, UDM, DM Input ODT Input RAS#, CAS#, WE# DQ[15:0] (x16) DQ[3:0] (x4) DQ[7:0] (x8) Input I/O PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Ball Assignments and Descriptions Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions (Continued) Symbol DQS, DQS# Type I/O Description Data strobe: Output with read data, input with write data for source synchronous operation. Edge-aligned with read data, center-aligned with write data. DQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. Data strobe for lower byte: Output with read data, input with write data for source synchronous operation. Edge-aligned with read data, center-aligned with write data. LDQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. Data strobe for upper byte: Output with read data, input with write data for source synchronous operation. Edge-aligned with read data, center-aligned with write data. UDQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. Redundant data strobe: For x8 only. RDQS is enabled/disabled via the LOAD MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS is output with read data only and is ignored during write data. When RDQS is disabled, ball B3 becomes data mask (see DM ball). RDQS# is only used when RDQS is enabled and differential data strobe mode is enabled. Power supply: 1.8V ±0.1V. DQ power supply: 1.8V ±0.1V. Isolated on the device for improved noise immunity. DLL power supply: 1.8V ±0.1V. SSTL_18 reference voltage (VDDQ/2). Ground. DLL ground: Isolated on the device from VSS and VSSQ. DQ ground: Isolated on the device for improved noise immunity. No connect: These balls should be left unconnected. No function: x8: these balls are used as DQ[7:4]; x4: they are no function. Not used: For x16 only. If EMR(E10) = 0, A8 and E8 are UDQS# and LDQS#. If EMR(E10) = 1, then A8 and E8 are not used. Not used: For x8 only. If EMR(E10) = 0, A2 and E8 are RDQS# and DQS#. If EMR(E10) = 1, then A2 and E8 are not used. Reserved for future use: Row address bits A13 (x16 only), A14, and A15. LDQS, LDQS# I/O UDQS, UDQS# I/O RDQS, RDQS# Output VDD VDDQ VDDL VREF VSS VSSDL VSSQ NC NF NU NU RFU Supply Supply Supply Supply Supply Supply Supply – – – – – PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Packaging Packaging Package Dimensions Figure 8: 84-Ball FBGA Package (8mm x 12.5mm) – x16 0.8 ±0.1 Seating plane 0.12 A A 84X Ø0.45 Solder ball material: Pb-free – (SAC305) SnAgCu Pb – (Eutectic) SnPbAg Dimensions apply to solder balls post-reflow on Ø0.35 SMD ball pads. 8 ±0.1 9 8 7 3 2 1 A B C D E F G 0.25 MIN Ball A1 ID Ball A1 ID 11.2 CTR 0.8 TYP H J K L M N P R 12.5 ±0.1 0.8 TYP 6.4 CTR Exposed gold-plated pad 1.0 MAX X 0.7 NOM nonconductive floating pad 1.2 MAX Note: 1. All dimensions are in millimeters. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Packaging Figure 9: 60-Ball FBGA Package (8mm x 11.5mm) – x4, x8 Seating plane 0.12 A 60X Ø0.45 Solder ball material: Pb-free – (SAC305) SnAgCu Pb – (Eutectic) SnPbAg Dimensions apply to solder balls post-reflow on Ø0.35 SMD ball pads. A 0.8 ±0.1 9 8 7 3 2 1 Ball A1 ID Ball A1 ID A B C D E 8 CTR F G H J 11.5 ±0.1 0.8 TYP K L 0.8 TYP 6.4 CTR 8 ±0.1 Exposed gold-plated pad 1.0 MAX X 0.7 nonconductive floating pad 1.2 MAX 0.25 MIN Note: 1. All dimensions are in millimeters. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Packaging Figure 10: 60-Ball FBGA (8mm x 10mm) – x4, x8 Seating Plane 0.12 A A 0.8 ±0.1 60X Ø0.45 Solder ball material: Pb-free – (SAC305) SnAgCu Pb – (Eutectic) SnPbAg Dimensions apply to solder balls post-reflow on Ø0.35 SMD ball pads. 987 321 A B C D E F G H J K L Ball A1 ID Ball A1 ID 8 CTR 10 ±0.15 0.8 TYP 0.8 TYP 6.4 CTR 8 ±0.15 1.0 X 0.73 MAX exposed gold-plated pad nonconductive floating pad 1.2 MAX 0.25 MIN Note: 1. All dimensions are in millimeters. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Packaging FBGA Package Capacitance Table 4: Input Capacitance Parameter Input capacitance: CK, CK# Delta input capacitance: CK, CK# Input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, ODT Delta input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, ODT Input/output capacitance: DQ, DQS, DM, NF Delta input/output capacitance: DQ, DQS, DM, NF Notes: Symbol Min Max Units Notes CCK CDCK CI CDI CIO CDIO 1.0 – 1.0 – 2.5 – 2.0 0.25 2.0 0.25 4.0 0.5 pF pF pF pF pF pF 1 2, 3 1, 4 2, 3 1, 5 2, 3 1. This parameter is sampled. VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V, VREF = VSS, f = 100 MHz, TC = 25°C, VOUT(DC) = VDDQ/2, VOUT (peak-to-peak) = 0.1V. DM input is grouped with I/O balls, reflecting the fact that they are matched in loading. 2. The capacitance per ball group will not differ by more than this maximum amount for any given device. 3. ΔC are not pass/fail parameters; they are targets. 4. Reduce MAX limit by 0.25pF for -25, -25E, and -187E speed devices. 5. Reduce MAX limit by 0.5pF for -3, -3E, -25, -25E, and -187E speed devices. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Electrical Specifications – Absolute Ratings Electrical Specifications – Absolute Ratings Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Table 5: Absolute Maximum DC Ratings Parameter VDD supply voltage relative to VSS VDDQ supply voltage relative to VSSQ VDDL supply voltage relative to VSSL Voltage on any ball relative to VSS Input leakage current; any input 0V ≤ VIN ≤ VDD; all other balls not under test = 0V Output leakage current; 0V ≤ VOUT ≤ VDDQ; DQ and ODT disabled VREF leakage current; VREF = Valid VREF level Notes: Symbol VDD VDDQ VDDL VIN, VOUT II IOZ IVREF Min –1.0 –0.5 –0.5 –0.5 –5 –5 –2 Max 2.3 2.3 2.3 2.3 5 5 2 Units V V V V µA µA µA Notes 1 1, 2 1 3 1. VDD, VDDQ, and VDDL must be within 300mV of each other at all times; this is not required when power is ramping down. 2. VREF ≤ 0.6 × VDDQ; however, VREF may be ≥ VDDQ provided that VREF ≤ 300mV. 3. Voltage on any I/O may not exceed voltage on VDDQ. Temperature and Thermal Impedance It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in Table 6 (page 24), be maintained in order to ensure the junction temperature is in the proper operating range to meet data sheet specifications. An important step in maintaining the proper junction temperature is using the device’s thermal impedances correctly. The thermal impedances are listed in Table 7 (page 25) for the applicable and available die revision and packages. Incorrectly using thermal impedances can produce significant errors. Read Micron technical note TN-00-08, “Thermal Applications” prior to using the thermal impedances listed in Table 7. For designs that are expected to last several years and require the flexibility to use several DRAM die shrinks, consider using final target theta values (rather than existing values) to account for increased thermal impedances from the die size reduction. The DDR2 SDRAM device’s safe junction temperature range can be maintained when the TC specification is not exceeded. In applications where the device’s ambient temperature is too high, use of forced air and/or heat sinks may be required in order to satisfy the case temperature specifications. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Electrical Specifications – Absolute Ratings Table 6: Temperature Limits Parameter Storage temperature Operating temperature: commercial Operating temperature: industrial Symbol TSTG TC TC TA Notes: Min –55 0 –40 –40 Max 150 85 95 85 Units °C °C °C °C Notes 1 2, 3 2, 3, 4 4, 5 1. MAX storage case temperature TSTG is measured in the center of the package, as shown in Figure 11. This case temperature limit is allowed to be exceeded briefly during package reflow, as noted in Micron technical note TN-00-15, “Recommended Soldering Parameters.” 2. MAX operating case temperature TC is measured in the center of the package, as shown in Figure 11. 3. Device functionality is not guaranteed if the device exceeds maximum TC during operation. 4. Both temperature specifications must be satisfied. 5. Operating ambient temperature surrounding the package. Figure 11: Example Temperature Test Point Location Test point Length (L) 0.5 (L) 0.5 (W) Width (W) Lmm x Wmm FBGA PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Electrical Specifications – Absolute Ratings Table 7: Thermal Impedance Die Revision G1 Package 60-ball 84-ball H1 60-ball 84-ball Substrate (pcb) 2-layer 4-layer 2-layer 4-layer 2-layer 4-layer 2-layer 4-layer Note: θ JA (°C/W) Airflow = 0m/s 66.5 49.2 60.2 44 72.5 54.5 68.8 51.3 θ JA (°C/W) Airflow = 1m/s 49.6 40.4 44.5 35.7 55.5 45.7 52.0 42.7 θ JA (°C/W) Airflow = 2m/s 43.1 36.4 39.3 32.8 49.5 42.3 46.5 39.6 θ JB (°C/W) θ JC (°C/W) 30.3 30 26.1 26.1 35.6 35.2 32.5 32.3 5.6 5.7 5.6 5.9 1. Thermal resistance data is based on a number of samples from multiple lots and should be viewed as a typical number. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Electrical Specifications – IDD Parameters Electrical Specifications – IDD Parameters IDD Specifications and Conditions Table 8: General IDD Parameters IDD Parameters CL (IDD) tRCD tRC -187E 7 13.125 58.125 7.5 10 1.875 45 70,000 13.125 75 105 127.5 195 -25E 5 12.5 57.5 7.5 10 2.5 45 70,000 12.5 75 105 127.5 195 -25 6 15 60 7.5 10 2.5 45 70,000 15 75 105 127.5 195 -3E 4 12 57 7.5 10 3 45 70,000 12 75 105 127.5 195 -3 5 15 60 7.5 10 3 45 70,000 15 75 105 127.5 195 -37E 4 15 60 7.5 10 3.75 45 70,000 15 75 105 127.5 195 -5E 3 15 55 7.5 10 5 40 70,000 15 75 105 127.5 195 Units tCK (IDD) (IDD) - x4/x8 (1KB) (IDD) - x16 (2KB) MIN (IDD) MAX (IDD) (IDD - 256Mb) (IDD - 512Mb) (IDD - 1Gb) (IDD - 2Gb) (IDD) - x4/x8 (1KB) (IDD) - x16 (2KB) ns ns ns ns ns ns ns ns ns ns ns ns ns ns (IDD) tRRD tRRD tCK (IDD) tRAS tRAS tRP (IDD) tRFC tRFC tRFC tRFC tFAW tFAW Defined by pattern in Table 9 (page 27) Defined by pattern in Table 9 (page 27) PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 26 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Electrical Specifications – IDD Parameters IDD7 Conditions The detailed timings are shown below for IDD7. Where general IDD parameters in Table 8 (page 26) conflict with pattern requirements of Table 9, then Table 9 requirements take precedence. Table 9: IDD7 Timing Patterns (8-Bank Interleave READ Operation) Speed Grade -5E -37E -3 -3E -25 -25E -187E -5E -37E -3 -3E -25 -25E -187E IDD7 Timing Patterns A0 RA0 A1 RA1 A2 RA2 A3 RA3 A4 RA4 A5 RA5 A6 RA6 A7 RA7 A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D D A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D A4 RA4 D D D D A5 RA5 D D D D A6 RA6 D D D D A7 RA7 D D D D Notes: 1. A = active; RA = read auto precharge; D = deselect. 2. All banks are being interleaved at tRC (IDD) without violating tRRD (IDD) using a BL = 4. 3. Control and address bus inputs are stable during deselects. Timing patterns for 8-bank x4/x8 devices Timing patterns for 8-bank x16 devices PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Electrical Specifications – IDD Parameters Table 10: DDR2 IDD Specifications and Conditions (Die Revisions E, G, and H) Notes: 1–7 apply to the entire table Parameter/Condition Operating one bank activeprecharge current: tCK = tCK (I ), tRC = tRC (I ), tRAS DD DD = tRAS MIN (IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching Operating one bank active-readprecharge current: IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD), tRCD = tRCD (IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are switching; Data pattern is same as IDD4W Precharge power-down current: All banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating Precharge quiet standby current: All banks idle; tCK = tCK (I ); CKE is HIGH, CS# is DD HIGH; Other control and address bus inputs are stable; Data bus inputs are floating Precharge standby current: All banks idle; tCK = tCK (IDD); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are switching; Data bus inputs are switching Active power-down current: All banks open; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating Active standby current: All banks open; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN Symbol IDD0 Configuration x4, x8 x16 -187E 115 180 -25E/ -25 90 150 -3E/ -3 85 135 -37E 70 110 -5E 70 110 Units mA IDD1 x4, x8 x16 130 210 110 175 100 130 95 120 90 115 mA IDD2P x4, x8, x16 7 7 7 7 7 mA IDD2Q x4, x8 x16 60 90 50 75 40 65 40 45 35 40 mA IDD2N x4, x8 x16 60 95 50 80 40 70 40 50 35 40 mA IDD3Pf IDD3Ps Fast exit MR12 = 0 Slow exit MR12 = 1 x4, x8 x16 50 10 40 10 30 10 30 10 30 10 mA IDD3N 70 95 60 85 55 75 45 60 40 55 mA 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Electrical Specifications – IDD Parameters Table 10: DDR2 IDD Specifications and Conditions (Die Revisions E, G, and H) (Continued) Notes: 1–7 apply to the entire table Parameter/Condition Operating burst write current: All banks open, continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (I ), tRAS = tRAS MAX DD (IDD), tRP = tRP (IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching Operating burst read current: All banks open, continuous burst reads, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (I ), tRP = tRP (I ); CKE DD DD is HIGH, CS# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching Burst refresh current: tCK = tCK (IDD); REFRESH command at every tRFC (I ) interval; CKE is HIGH, CS# DD is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are floating; Data bus inputs are floating Operating bank interleave read current: All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK (I ), tRC = tRC (I ), tRRD DD DD = tRRD (IDD), tRCD = tRCD (IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching; See on page for details Notes: Symbol IDD4W Configuration x4 x8 x16 -187E 190 210 405 -25E/ -25 145 160 315 -3E/ -3 120 135 200 -37E 110 125 180 -5E 90 105 160 Units mA IDD4R x4 x8 x16 190 210 420 145 160 320 120 135 220 110 125 180 90 105 160 mA IDD5 x4, x8 x16 265 300 235 280 215 270 210 250 205 240 mA IDD6 IDD6L x4, x8, x16 7 5 7 5 7 5 7 5 7 5 mA IDD7 x4, x8 x16 425 520 335 440 280 350 270 330 260 300 mA 1. IDD specifications are tested after the device is properly initialized. 0°C ≤ TC ≤ +85°C. 2. VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V, VDDL = +1.8V ±0.1V, VREF = VDDQ/2. 3. IDD parameters are specified with ODT disabled. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 29 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Electrical Specifications – IDD Parameters 4. Data bus consists of DQ, DM, DQS, DQS#, RDQS, RDQS#, LDQS, LDQS#, UDQS, and UDQS#. IDD values must be met with all combinations of EMR bits 10 and 11. 5. Definitions for IDD conditions: LOW HIGH VIN ≤ VIL(AC)max VIN ≥ VIH(AC)min Inputs stable at a HIGH or LOW level Stable Floating Inputs at VREF = VDDQ/2 Switching Inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals Switching Inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals, not including masks or strobes 6. IDD1, IDD4R, and IDD7 require A12 in EMR to be enabled during testing. 7. The following IDD values must be derated (IDD limits increase) on IT-option and AT-option devices when operated outside of the range 0°C ≤ TC ≤ 85°C: When TC ≤ 0°C IDD2P and IDD3P(SLOW) must be derated by 4%; IDD4R and IDD5W must be derated by 2%; and IDD6 and IDD7 must be derated by 7% IDD0, IDD1, IDD2N, IDD2Q, IDD3N, IDD3P(FAST), IDD4R, IDD4W, and IDD5W must be deratWhen TC ≥ 85°C ed by 2%; IDD2P must be derated by 20%; IDD3P(SLOW) must be derated by 30%; and IDD6 must be derated by 80% (IDD6 will increase by this amount if TC < 85°C and the 2X refresh option is still enabled) PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 30 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. AC Timing Operating Specifications Table 11: AC Operating Specifications and Conditions Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table; VDDQ = +1.8V ±0.1V, VDD = +1.8V ±0.1V AC Characteristics -187E -25E -25 -3E -3 -37E -5E Parameter Clock cycle time CL = 7 CL = 6 CL = 5 CL = 4 CL = 3 CK high-level width Clock CK low-level width Half clock period Absolute tCK Symbol tCK tCK tCK tCK tCK tCH tCL Clock Jitter PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN Min 2.5 3.0 3.75 5.0 0.48 0.48 Max 8.0 8.0 8.0 8.0 8.0 0.52 0.52 Min – 2.5 2.5 3.75 5.0 0.48 0.48 Max – 8.0 8.0 8.0 8.0 0.52 0.52 Min – 2.5 3.0 3.75 5.0 0.48 0.48 Max – 8.0 8.0 8.0 8.0 0.52 0.52 Min – – 3.0 3.0 5.0 0.48 0.48 Max – – 8.0 8.0 8.0 0.52 0.52 Min – – 3.0 3.75 5.0 0.48 0.48 Max – – 8.0 8.0 8.0 0.52 0.52 Min – – – 3.75 5.0 0.48 0.48 Max – – – 8.0 8.0 0.52 0.52 Min – – – 5.0 5.0 0.48 0.48 Max Units Notes – – – 8.0 8.0 0.52 0.52 tCK tCK (avg) 1.875 (avg) (avg) (avg) (avg) (avg) (avg) ns 6, 7, 8, 9 10 11 tHP tCK tCH tCL MIN = lesser of tCH and tCL MAX = n/a MIN = tCK (AVG) MIN + tJITper (MIN) MAX = tCK (AVG) MAX + tJITper (MAX) MIN = tCK (AVG) MIN × tCH (AVG) MIN + tJITdty (MIN) MAX = tCK (AVG) MAX × tCH (AVG) MAX + tJITdty (MAX) MIN = tCK (AVG) MIN × tCL (AVG) MIN + tJITdty (MIN) MAX = tCK (AVG) MAX × tCL (AVG) MAX + tJITdty (MAX) –90 –75 180 –132 –157 –175 –188 –250 –425 132 157 175 188 250 425 90 75 –100 –100 200 –150 –175 –200 –200 –300 –450 150 175 200 200 300 450 100 100 –100 –100 200 –150 –175 –200 –200 –300 –450 150 175 200 200 300 450 100 100 –125 –125 250 –175 –225 –250 –250 –350 –450 175 225 250 250 350 450 125 125 –125 –125 250 –175 –225 –250 –250 –350 –450 175 225 250 250 350 450 125 125 –125 –125 250 –175 –225 –250 –250 –350 –450 175 225 250 250 350 450 125 125 –125 –150 250 –175 –225 –250 –250 –350 –450 175 225 250 250 350 450 125 150 ps ps ps ps ps ps ps ps ps ps ps ps ps (abs) (abs) (abs) 31 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. Absolute CK high-level width Absolute CK low-level width Period jitter Half period Cycle to cycle Cumulative error, 2 cycles Cumulative error, 3 cycles Cumulative error, 4 cycles Cumulative error, 5 cycles Cumulative error, 6–10 cycles Cumulative error, 11–50 cycles 1Gb: x4, x8, x16 DDR2 SDRAM AC Timing Operating Specifications tJITper tJITdty tJITcc tERR tERR tERR tERR 2per 12 13 14 15 15 15 15, 16 15, 16 15 3per 4per 5per tERR 6– 10per tERR 11– 50per Data Strobe-Out Data Strobe-In PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN Table 11: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table; VDDQ = +1.8V ±0.1V, VDD = +1.8V ±0.1V AC Characteristics -187E -25E -25 -3E -3 -37E -5E Parameter DQS output access time from CK/CK# DQS read preamble DQS read postamble CK/CK# to DQS Low-Z DQS rising edge to CK rising edge DQS input-high pulse width DQS input-low pulse width DQS falling to CK rising: setup time DQS falling from CK rising: hold time Write preamble setup time DQS write preamble DQS write postamble WRITE command to first DQS transition Symbol tDQSCK tRPRE tRPST tLZ Min –300 Max +300 Min –350 Max +350 Min –350 Max +350 Min –400 Max +400 Min –400 Max +400 Min –450 Max +450 Min –500 Max Units Notes +500 ps tCK tCK 19 17, 18, 19 17, 18, 19, 20 19, 21, 22 18 18 18 18 18 MIN = 0.9 × tCK MAX = 1.1 × tCK MIN = 0.4 × tCK MAX = 0.6 × tCK MIN = tAC (MIN) MAX = tAC (MAX) MIN = –0.25 × tCK MAX = +0.25 × tCK MIN = 0.35 × tCK MAX = n/a MIN = 0.35 × tCK MAX = n/a MIN = 0.2 × tCK MAX = n/a MIN = 0.2 × tCK MAX = n/a MIN = 0 MAX = n/a MIN = 0.35 × tCK MAX = n/a MIN = 0.4 × tCK MAX = 0.6 × tCK MIN = WL - tDQSS MAX = WL + tDQSS 1 ps tCK tCK tCK tCK tCK tDQSS tDQSH tDQSL tDSS tDSH 32 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM AC Timing Operating Specifications tWPRES tWPRE tWPST ps tCK tCK tCK 23, 24 18 18, 25 – Data-Out Data-In PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN Table 11: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table; VDDQ = +1.8V ±0.1V, VDD = +1.8V ±0.1V AC Characteristics -187E -25E -25 -3E -3 -37E -5E Parameter DQ output access time from CK/CK# DQS–DQ skew, DQS to last DQ valid, per group, per access DQ hold from next DQS strobe DQ–DQS hold, DQS to first DQ not valid CK/CK# to DQ, DQS High-Z CK/CK# to DQ Low-Z Data valid output window DQ and DM input setup time to DQS DQ and DM input hold time to DQS DQ and DM input setup time to DQS DQ and DM input hold time to DQS DQ and DM input pulse width Symbol tAC tDQSQ Min –350 – Max +350 175 Min –400 – Max +400 200 Min –400 – Max +400 200 Min –450 – Max +450 240 Min –450 – Max +450 240 Min –500 – Max +500 300 Min –600 – Max Units Notes +600 350 ps ps 19 26, 27 tQHS tQH tHZ tLZ – 250 – 300 – 300 – 340 – 340 – 400 – 450 ps ps ps ps ns 28 26, 27, 28 19, 21, 29 19, 21, 22 26, 27 26, 30, 31 26, 30, 31 26, 30, 31 26, 30, 31 18, 32 MIN = tHP - tQHS MAX = n/a MIN = n/a MAX = tAC (MAX) MIN = 2 × tAC (MIN) MAX = tAC (MAX) MIN = tQH - tDQSQ MAX = n/a 0 75 200 200 – – – – 50 125 250 250 – – – – 50 125 250 250 – – – – 100 175 300 300 – – – – 100 175 300 300 – – – – 100 225 350 350 – – – – 150 275 400 400 – – – – 2 33 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. DVW tDSb tDHb tDSa tDHa tDIPW ps ps ps ps tCK 1Gb: x4, x8, x16 DDR2 SDRAM AC Timing Operating Specifications MIN = 0.35 × tCK MAX = n/a Command and Address PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN Table 11: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table; VDDQ = +1.8V ±0.1V, VDD = +1.8V ±0.1V AC Characteristics -187E -25E -25 -3E -3 -37E -5E Parameter Input setup time Input hold time Input setup time Input hold time Input pulse width ACTIVATE-toACTIVATE delay, same bank ACTIVATE-to-READ or WRITE delay ACTIVATE-toPRECHARGE delay PRECHARGE period PRECHARGE ALL period ACTIVATE -toACTIVATE delay different bank 4-bank activate period (≥1Gb) 1, such as frequencies faster than 533 MHz when tRTP = 7.5ns. If tRTP/(2 × tCK) ≤ 1, then equation AL + BL/2 applies. tRAS (MIN) has to be satisfied as well. The DDR2 SDRAM will automatically delay the internal PRECHARGE command until tRAS (MIN) has been satisfied. tDAL = (nWR) + (tRP/tCK). Each of these terms, if not already an integer, should be rounded up to the next integer. tCK refers to the application clock period; nWR refers to the tWR parameter stored in the MR9–MR11. For example, -37E at tCK = 3.75ns with tWR programmed to four clocks would have tDAL = 4 + (15ns/3.75ns) clocks = 4 + (4) clocks = 8 clocks. The refresh period is 64ms (commercial) or 32ms (industrial and automotive). This equates to an average refresh rate of 7.8125µs (commercial) or 3.9607µs (industrial and automotive). To ensure all rows of all banks are properly refreshed, 8192 REFRESH commands must be issued every 64ms (commercial) or 32ms (industrial and automotive). The JEDEC tRFC MAX of 70,000ns is not required as bursting of AUTO REFRESH commands is allowed. tDELAY is calculated from tIS + tCK + tIH so that CKE registration LOW is guaranteed prior to CK, CK# being removed in a system RESET condition (see Reset (page 123)). tISXR is equal to tIS and is used for CKE setup time during self refresh exit, as shown in Figure 68 (page 114). tCKE (MIN) of three clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to achieve the three clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + 2 × tCK + tIH. The half-clock of tAOFD’s 2.5 tCK assumes a 50/50 clock duty cycle. This half-clock value must be derated by the amount of half-clock duty cycle error. For example, if the clock 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 45. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 40 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM AC and DC Operating Conditions duty cycle was 47/53, tAOFD would actually be 2.5 - 0.03, or 2.47, for tAOF (MIN) and 2.5 + 0.03, or 2.53, for tAOF (MAX). ODT turn-on time tAON (MIN) is when the device leaves High-Z and ODT resistance begins to turn on. ODT turn-on time tAON (MAX) is when the ODT resistance is fully on. Both are measured from tAOND. ODT turn-off time tAOF (MIN) is when the device starts to turn off ODT resistance. ODT turn off time tAOF (MAX) is when the bus is in High-Z. Both are measured from tAOFD. Half-clock output parameters must be derated by the actual tERR5per and tJITdty when input clock jitter is present; this will result in each parameter becoming larger. The parameter tAOF (MIN) is required to be derated by subtracting both tERR5per (MAX) and tJITdty (MAX). The parameter tAOF (MAX) is required to be derated by subtracting both tERR t 5per (MIN) and JITdty (MIN). The -187E maximum limit is 2 × tCK + tAC (MAX) + 1000 but it will likely be 3 x tCK + tAC (MAX) + 1000 in the future. Should use 8 tCK for backward compatibility. 46. 47. 48. 49. 50. AC and DC Operating Conditions Table 12: Recommended DC Operating Conditions (SSTL_18) All voltages referenced to VSS Parameter Supply voltage VDDL supply voltage I/O supply voltage I/O reference voltage I/O termination voltage (system) Notes: 1. 2. 3. 4. Symbol VDD VDDL VDDQ VREF(DC) VTT Min 1.7 1.7 1.7 0.49 × VDDQ VREF(DC) - 40 Nom 1.8 1.8 1.8 0.50 × VDDQ VREF(DC) Max 1.9 1.9 1.9 0.51 × VDDQ VREF(DC) + 40 Units V V V V mV Notes 1, 2 2, 3 2, 3 4 5 VDD and VDDQ must track each other. VDDQ must be ≤ VDD. VSSQ = VSSL = VSS. VDDQ tracks with VDD; VDDL tracks with VDD. VREF is expected to equal VDDQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise (noncommon mode) on VREF may not exceed ±1 percent of the DC value. Peak-to-peak AC noise on VREF may not exceed ±2 percent of VREF(DC). This measurement is to be taken at the nearest VREF bypass capacitor. 5. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 41 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM ODT DC Electrical Characteristics ODT DC Electrical Characteristics Table 13: ODT DC Electrical Characteristics All voltages are referenced to VSS Parameter RTT effective impedance value for 75Ω setting EMR (A6, A2) = 0, 1 RTT effective impedance value for 150Ω setting EMR (A6, A2) = 1, 0 RTT effective impedance value for 50Ω setting EMR (A6, A2) = 1, 1 Deviation of VM with respect to VDDQ/2 Notes: Symbol RTT1(EFF) RTT2(EFF) RTT3(EFF) ΔVM Min 60 120 40 –6 Nom 75 150 50 – Max 90 180 60 6 Units Ω Ω Ω % Notes 1, 2 1, 2 1, 2 3 1. RTT1(EFF) and RTT2(EFF) are determined by separately applying VIH(AC) and VIL(DC) to the ball being tested, and then measuring current, I(VIH[AC]), and I(VIL[AC]), respectively. 2. Minimum IT and AT device values are derated by six percent when the devices operate between –40°C and 0°C (TC ). 3. Measure voltage (VM) at tested ball with no load. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Electrical Characteristics and Operating Conditions Input Electrical Characteristics and Operating Conditions Table 14: Input DC Logic Levels All voltages are referenced to VSS Parameter Input high (logic 1) voltage Input low (logic 0) voltage Note: Symbol VIH(DC) VIL(DC) Min VREF(DC) + 125 –300 Max VDDQ 1 Units mV mV VREF(DC) - 125 1. VDDQ + 300mV allowed provided 1.9V is not exceeded. Table 15: Input AC Logic Levels All voltages are referenced to VSS Parameter Input high (logic 1) voltage (-37E/-5E) Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3) Input low (logic 0) voltage (-37E/-5E) Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3) Note: Symbol VIH(AC) VIH(AC) VIL(AC) VIL(AC) Min VREF(DC) + 250 VREF(DC) + 200 –300 –300 Max VDDQ VDDQ 1 1 Units mV mV mV mV VREF(DC) - 250 VREF(DC) - 200 1. Refer to AC Overshoot/Undershoot Specification (page 53). Figure 12: Single-Ended Input Signal Levels 1,150mV VIH(AC) 1,025mV VIH(DC) 936mV 918mV 900mV 882mV 864mV VREF + AC noise VREF + DC error VREF - DC error VREF - AC noise 775mV VIL(DC) 650mV VIL(AC) Note: 1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Electrical Characteristics and Operating Conditions Table 16: Differential Input Logic Levels All voltages referenced to VSS Parameter DC input signal voltage DC differential input voltage AC differential input voltage AC differential cross-point voltage Input midpoint voltage Notes: Symbol VIN(DC) VID(DC) VID(AC) VIX(AC) VMP(DC) Min –300 250 500 0.50 × VDDQ - 175 850 Max VDDQ VDDQ VDDQ 0.50 × VDDQ + 175 950 Units mV mV mV mV mV Notes 1, 6 2, 6 3, 6 4 5 1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK#, DQS, DQS#, LDQS, LDQS#, UDQS, UDQS#, and RDQS, RDQS#. 2. VID(DC) specifies the input differential voltage |VTR - VCP| required for switching, where VTR is the true input (such as CK, DQS, LDQS, UDQS) level and VCP is the complementary input (such as CK#, DQS#, LDQS#, UDQS#) level. The minimum value is equal to VIH(DC) VIL(DC). Differential input signal levels are shown in Figure 13. 3. VID(AC) specifies the input differential voltage |VTR - VCP| required for switching, where VTR is the true input (such as CK, DQS, LDQS, UDQS, RDQS) level and VCP is the complementary input (such as CK#, DQS#, LDQS#, UDQS#, RDQS#) level. The minimum value is equal to VIH(AC) - VIL(AC), as shown in Table 15 (page 43). 4. The typical value of VIX(AC) is expected to be about 0.5 × VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ. VIX(AC) indicates the voltage at which differential input signals must cross, as shown in Figure 13. 5. VMP(DC) specifies the input differential common mode voltage (VTR + VCP)/2 where VTR is the true input (CK, DQS) level and VCP is the complementary input (CK#, DQS#). VMP(DC) is expected to be approximately 0.5 × VDDQ. 6. VDDQ + 300mV allowed provided 1.9V is not exceeded. Figure 13: Differential Input Signal Levels 2.1V VDDQ = 1.8V CP2 VIN(DC)max1 1.075V 0.9V 0.725V X X VMP(DC)3 VIX(AC)4 VID(DC)5 VID(AC)6 TR2 –0.30V VIN(DC)min1 Notes: 1. TR and CP may not be more positive than VDDQ + 0.3V or more negative than VSS - 0.3V. 2. TR represents the CK, DQS, RDQS, LDQS, and UDQS signals; CP represents CK#, DQS#, RDQS#, LDQS#, and UDQS# signals. 3. This provides a minimum of 850mV to a maximum of 950mV and is expected to be VDDQ/2. 4. TR and CP must cross in this region. 5. TR and CP must meet at least VID(DC)min when static and is centered around VMP(DC). 6. TR and CP must have a minimum 500mV peak-to-peak swing. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Electrical Characteristics and Operating Conditions 7. Numbers in diagram reflect nominal values (VDDQ = 1.8V). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Output Electrical Characteristics and Operating Conditions Output Electrical Characteristics and Operating Conditions Table 17: Differential AC Output Parameters Parameter AC differential cross-point voltage AC differential voltage swing Note: Symbol VOX(AC) Vswing Min 0.50 × VDDQ - 125 1.0 Max 0.50 × VDDQ + 125 – Units mV mV Notes 1 1. The typical value of VOX(AC) is expected to be about 0.5 × VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ. VOX(AC) indicates the voltage at which differential output signals must cross. Figure 14: Differential Output Signal Levels VDDQ VTR Vswing Crossing point VOX VCP VSSQ Table 18: Output DC Current Drive Parameter Output MIN source DC current Output MIN sink DC current Notes: Symbol IOH IOL Value –13.4 13.4 Units mA mA Notes 1, 2, 4 2, 3, 4 1. For IOH(DC); VDDQ = 1.7V, VOUT = 1,420mV. (VOUT - VDDQ)/IOH must be less than 21Ω for values of VOUT between VDDQ and VDDQ - 280mV. 2. For IOL(DC); VDDQ = 1.7V, VOUT = 280mV. VOUT/IOL must be less than 21Ω for values of VOUT between 0V and 280mV. 3. The DC value of VREF applied to the receiving device is set to VTT. 4. The values of IOH(DC) and IOL(DC) are based on the conditions given in Notes 1 and 2. They are used to test device drive current capability to ensure VIH,min plus a noise margin and VIL,max minus a noise margin are delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating point (see output IV curves) along a 21Ω load line to define a convenient driver current for measurement. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Output Electrical Characteristics and Operating Conditions Table 19: Output Characteristics Parameter Output impedance Pull-up and pull-down mismatch Output slew rate Notes: Min 0 1.5 Nom – – Max 4 5 Units Ω Ω V/ns Notes 1, 2 1, 2, 3 1, 4, 5, 6 See Output Driver Characteristics (page 48) 1. Absolute specifications: 0°C ≤ TC ≤ +85°C; VDDQ = +1.8V ±0.1V, VDD = +1.8V ±0.1V. 2. Impedance measurement conditions for output source DC current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT - VDDQ)/IOH must be less than 23.4Ω for values of VOUT between VDDQ and VDDQ - 280mV. The impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV; VOUT/IOL must be less than 23.4Ω for values of VOUT between 0V and 280mV. 3. Mismatch is an absolute value between pull-up and pull-down; both are measured at the same temperature and voltage. 4. Output slew rate for falling and rising edges is measured between VTT - 250mV and VTT + 250mV for single-ended signals. For differential signals (DQS, DQS#), output slew rate is measured between DQS - DQS# = –500mV and DQS# - DQS = +500mV. Output slew rate is guaranteed by design but is not necessarily tested on each device. 5. The absolute value of the slew rate as measured from VIL(DC)max to VIH(DC)min is equal to or greater than the slew rate as measured from VIL(AC)max to VIH(AC)min. This is guaranteed by design and characterization. 6. IT and AT devices require an additional 0.4 V/ns in the MAX limit when TC is between – 40°C and 0°C. Figure 15: Output Slew Rate Load VTT = VDDQ/2 Output (VOUT) 25Ω Reference point PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 47 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Output Driver Characteristics Output Driver Characteristics Figure 16: Full Strength Pull-Down Characteristics 120 100 80 IOUT (mA) 60 40 20 0 0.0 0.5 1.0 VOUT (V) 1.5 Table 20: Full Strength Pull-Down Current (mA) Voltage (V) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Min 0.00 4.30 8.60 12.90 16.90 20.40 23.28 25.44 26.79 27.67 28.38 28.96 29.46 29.90 30.29 30.65 30.98 31.31 31.64 31.96 Nom 0.00 5.63 11.30 16.52 22.19 27.59 32.39 36.45 40.38 44.01 47.01 49.63 51.71 53.32 54.9 56.03 57.07 58.16 59.27 60.35 Max 0.00 7.95 15.90 23.85 31.80 39.75 47.70 55.55 62.95 69.55 75.35 80.35 84.55 87.95 90.70 93.00 95.05 97.05 99.05 101.05 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Output Driver Characteristics Figure 17: Full Strength Pull-Up Characteristics 0 –20 –40 IOUT (mA) –60 –80 –100 –120 0 0.5 1.0 VDDQ - VOUT (V) 1.5 Table 21: Full Strength Pull-Up Current (mA) Voltage (V) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Min 0.00 –4.30 –8.60 –12.90 –16.90 –20.40 –23.28 –25.44 –26.79 –27.67 –28.38 –28.96 –29.46 –29.90 –30.29 –30.65 –30.98 –31.31 –31.64 –31.96 Nom 0.00 –5.63 –11.30 –16.52 –22.19 –27.59 –32.39 –36.45 –40.38 –44.01 –47.01 –49.63 –51.71 –53.32 –54.90 –56.03 –57.07 –58.16 –59.27 –60.35 Max 0.00 –7.95 –15.90 –23.85 –31.80 –39.75 –47.70 –55.55 –62.95 –69.55 –75.35 –80.35 –84.55 –87.95 –90.70 –93.00 –95.05 –97.05 –99.05 –101.05 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Output Driver Characteristics Figure 18: Reduced Strength Pull-Down Characteristics 70 60 50 40 30 20 10 0 IOUT (mV) 0.0 0.5 1.0 VOUT (V) 1.5 Table 22: Reduced Strength Pull-Down Current (mA) Voltage (V) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Min 0.00 1.72 3.44 5.16 6.76 8.16 9.31 10.18 10.72 11.07 11.35 11.58 11.78 11.96 12.12 12.26 12.39 12.52 12.66 12.78 Nom 0.00 2.98 5.99 8.75 11.76 14.62 17.17 19.32 21.40 23.32 24.92 26.30 27.41 28.26 29.10 29.70 30.25 30.82 31.41 31.98 Max 0.00 4.77 9.54 14.31 19.08 23.85 28.62 33.33 37.77 41.73 45.21 48.21 50.73 52.77 54.42 55.80 57.03 58.23 59.43 60.63 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Output Driver Characteristics Figure 19: Reduced Strength Pull-Up Characteristics 0 –10 –20 IOUT (mV) –30 –40 –50 –60 –70 0.0 0.5 1.0 VDDQ - VOUT (V) 1.5 Table 23: Reduced Strength Pull-Up Current (mA) Voltage (V) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Min 0.00 –1.72 –3.44 –5.16 –6.76 –8.16 –9.31 –10.18 –10.72 –11.07 –11.35 –11.58 –11.78 –11.96 –12.12 –12.26 –12.39 –12.52 –12.66 –12.78 Nom 0.00 –2.98 –5.99 –8.75 –11.76 –14.62 –17.17 –19.32 –21.40 –23.32 –24.92 –26.30 –27.41 –28.26 –29.10 –29.69 –30.25 –30.82 –31.42 –31.98 Max 0.00 –4.77 –9.54 –14.31 –19.08 –23.85 –28.62 –33.33 –37.77 –41.73 –45.21 –48.21 –50.73 –52.77 –54.42 –55.8 –57.03 –58.23 –59.43 –60.63 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Power and Ground Clamp Characteristics Power and Ground Clamp Characteristics Power and ground clamps are provided on the following input-only balls: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, ODT, and CKE. Table 24: Input Clamp Characteristics Voltage Across Clamp (V) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Minimum Power Clamp Current (mA) 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.1 1.0 2.5 4.7 6.8 9.1 11.0 13.5 16.0 18.2 21.0 Minimum Ground Clamp Current (mA) 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.1 1.0 2.5 4.7 6.8 9.1 11.0 13.5 16.0 18.2 21.0 Figure 20: Input Clamp Characteristics 25 Minimum Clamp Current (mA) 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Voltage Across Clamp (V) PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM AC Overshoot/Undershoot Specification AC Overshoot/Undershoot Specification Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V maximum average amplitude shown in Table 25 and Table 26. Table 25: Address and Control Balls Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT Specification Parameter Maximum peak amplitude allowed for overshoot area (see Figure 21) Maximum peak amplitude allowed for undershoot area (see Figure 22) Maximum overshoot area above VDD (see Figure 21) Maximum undershoot area below VSS (see Figure 22) -187E 0.50V 0.50V 0.5 Vns 0.5 Vns -25/-25E 0.50V 0.50V 0.66 Vns 0.66 Vns -3/-3E 0.50V 0.50V 0.80 Vns 0.80 Vns -37E 0.50V 0.50V 1.00 Vns 1.00 Vns -5E 0.50V 0.50V 1.33 Vns 1.33 Vns Table 26: Clock, Data, Strobe, and Mask Balls Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM Specification Parameter Maximum peak amplitude allowed for overshoot area (see Figure 21) Maximum peak amplitude allowed for undershoot area (see Figure 22) Maximum overshoot area above VDDQ (see Figure 21) Maximum undershoot area below VSSQ (see Figure 22) -187E 0.50V 0.50V 0.19 Vns 0.19 Vns -25/-25E 0.50V 0.50V 0.23 Vns 0.23 Vns -3/-3E 0.50V 0.50V 0.23 Vns 0.23 Vns -37E 0.50V 0.50V 0.28 Vns 0.28 Vns -5E 0.50V 0.50V 0.38 Vns 0.38 Vns Figure 21: Overshoot Maximum amplitude Volts (V) Overshoot area VDD/VDDQ VSS/VSSQ Time (ns) Figure 22: Undershoot VSS/VSSQ Volts (V) Undershoot area Maximum amplitude Time (ns) PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM AC Overshoot/Undershoot Specification Table 27: AC Input Test Conditions Parameter Input setup timing measurement reference level address balls, bank address balls, CS#, RAS#, CAS#, WE#, ODT, DM, UDM, LDM, and CKE Input hold timing measurement reference level address balls, bank address balls, CS#, RAS#, CAS#, WE#, ODT, DM, UDM, LDM, and CKE Input timing measurement reference level (single-ended) DQS for x4, x8; UDQS, LDQS for x16 Input timing measurement reference level (differential) CK, CK# for x4, x8, x16; DQS, DQS# for x4, x8; RDQS, RDQS# for x8; UDQS, UDQS#, LDQS, LDQS# for x16 Notes: Symbol VRS Min Max Units Notes 1, 2, 3, 4 See Note 2 VRH See Note 5 1, 3, 4, 5 VREF(DC) VRD VDDQ × 0.49 VDDQ × 0.51 VIX(AC) V V 1, 3, 4, 6 1, 3, 7, 8, 9 1. All voltages referenced to VSS. 2. Input waveform setup timing (tISb) is referenced from the input signal crossing at the VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test, as shown in Figure 31 (page 66). 3. See Input Slew Rate Derating (page 55). 4. The slew rate for single-ended inputs is measured from DC level to AC level, VIL(DC) to VIH(AC) on the rising edge and VIL(AC) to VIH(DC) on the falling edge. For signals referenced to VREF, the valid intersection is where the “tangent” line intersects VREF, as shown in Figure 24 (page 58), Figure 26 (page 59), Figure 28 (page 64), and Figure 30 (page 65). 5. Input waveform hold (tIHb) timing is referenced from the input signal crossing at the VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the device under test, as shown in Figure 31 (page 66). 6. Input waveform setup timing (tDS) and hold timing (tDH) for single-ended data strobe is referenced from the crossing of DQS, UDQS, or LDQS through the Vref level applied to the device under test, as shown in Figure 33 (page 67). 7. Input waveform setup timing (tDS) and hold timing (tDH) when differential data strobe is enabled is referenced from the cross-point of DQS/DQS#, UDQS/UDQS#, or LDQS/ LDQS#, as shown in Figure 32 (page 66). 8. Input waveform timing is referenced to the crossing point level (VIX) of two input signals (VTR and VCP) applied to the device under test, where VTR is the true input signal and VCP is the complementary input signal, as shown in Figure 34 (page 67). 9. The slew rate for differentially ended inputs is measured from twice the DC level to twice the AC level: 2 × VIL(DC) to 2 × VIH(AC) on the rising edge and 2 × VIL(AC) to 2 × VIH(DC) on the falling edge. For example, the CK/CK# would be –250mV to +500mV for CK rising edge and would be +250mV to –500mV for CK falling edge. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Input Slew Rate Derating For all input signals, the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS (base) and tIH (base) value to the ΔtIS and ΔtIH derating value, respectively. Example: tIS (total setup time) = tIS (base) + ΔtIS. the nominal slew rate for a rising signal, is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min. Setup nominal slew rate (tIS) for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If the actual signal is always earlier than the nominal slew rate line between shaded “VREF(DC) to AC region,” use the nominal slew rate for the derating value (Figure 23 (page 58)). If the actual signal is later than the nominal slew rate line anywhere between the shaded “VREF(DC) to AC region,” the slew rate of a tangent line to the actual signal from the AC level to DC level is used for the derating value (see Figure 24 (page 58)). tIH, tIS, the nominal slew rate for a rising signal, is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC). tIH, nominal slew rate for a falling signal, is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If the actual signal is always later than the nominal slew rate line between shaded “DC to VREF(DC) region,” use the nominal slew rate for the derating value (Figure 25 (page 59)). If the actual signal is earlier than the nominal slew rate line anywhere between shaded “DC to VREF(DC) region,” the slew rate of a tangent line to the actual signal from the DC level to VREF(DC) level is used for the derating value (Figure 26 (page 59)). Although the total setup time might be negative for slow slew rates (a valid input signal will not have reached VIH[AC]/VIL[AC] at the time of the rising clock transition), a valid input signal is still required to complete the transition and reach VIH(AC)/VIL(AC). For slew rates in between the values listed in Table 28 (page 56) and Table 29 (page 57), the derating values may obtained by linear interpolation. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Table 28: DDR2-400/533 Setup and Hold Time Derating Values (tIS and tIH) CK, CK# Differential Slew Rate 2.0 V/ns Command/Address Slew Rate (V/ns) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.25 0.2 0.15 0.1 ΔtIS +187 +179 +167 +150 +125 +83 0 –11 –25 –43 –67 –110 –175 –285 –350 –525 –800 –1,450 ΔtIH +94 +89 +83 +75 +45 +21 0 –14 –31 –54 –83 –125 –188 –292 –375 –500 –708 –1,125 1.5 V/ns ΔtIS +217 +209 +197 +180 +155 +113 +30 +19 +5 –13 –37 –80 –145 –255 –320 –495 –770 –1,420 ΔtIH +124 +119 +113 +105 +75 +51 +30 +16 –1 –24 –53 –95 –158 –262 –345 –470 –678 –1,095 1.0 V/ns ΔtIS +247 +239 +227 +210 +185 +143 +60 +49 +35 +17 –7 –50 –115 –225 –290 –465 –740 –1,390 ΔtIH +154 +149 +143 +135 +105 +81 +60 +46 +29 +6 –23 –65 –128 –232 –315 –440 –648 –1,065 Units ps ps ps ps ps ps ps ps ps ps ps ps ps ps ps ps ps ps PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 56 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Table 29: DDR2-667/800/1066 Setup and Hold Time Derating Values (tIS and tIH) Command/ Address Slew Rate (V/ns) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.25 0.2 0.15 0.1 CK, CK# Differential Slew Rate 2.0 V/ns ΔtIS +150 +143 +133 +120 +100 +67 0 –5 –13 –22 –34 –60 –100 –168 –200 –325 –517 –1,000 ΔtIH +94 +89 +83 +75 +45 +21 0 –14 –31 –54 –83 –125 –188 –292 –375 –500 –708 –1,125 ΔtIS +180 +173 +163 +150 +160 +97 +30 +25 +17 +8 –4 –30 –70 –138 –170 –295 –487 –970 1.5 V/ns ΔtIH +124 +119 +113 +105 +75 +51 +30 +16 –1 –24 –53 –95 –158 –262 –345 –470 –678 –1,095 ΔtIS +210 +203 +193 +180 +160 +127 +60 +55 +47 +38 +36 0 –40 –108 –140 –265 –457 –940 1.0 V/ns ΔtIH +154 +149 +143 +135 +105 +81 +60 +46 +29 +6 –23 –65 –128 –232 –315 –440 –648 –1,065 Units ps ps ps ps ps ps ps ps ps ps ps ps ps ps ps ps ps ps PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 57 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Figure 23: Nominal Slew Rate for tIS CK CK# tIS tIH tIS tIH VDDQ VIH(AC)min VREF to AC region VIH(DC)min Nominal slew rate VREF(DC) Nominal slew rate VIL(DC)max VREF to AC region VIL(AC)max VSS ΔTF ΔTR VIH(AC)min - VREF(DC) Setup slew rate = rising signal ΔTR VREF(DC) - VIL(AC)max Setup slew rate = falling signal ΔTF Figure 24: Tangent Line for tIS CK CK# VDDQ VIH(AC)min tIS tIH tIS tIH VREF to AC region Nominal line VIH(DC)min Tangent line VREF(DC) Tangent line VIL(DC)max Nominal line VIL(AC)max ΔTF VSS Tangent line (VIH[AC]min - VREF[DC]) Setup slew rate = rising signal ΔTR ΔTR VREF to AC region PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 58 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Figure 25: Nominal Slew Rate for tIH CK CK# tIS tIH tIS tIH VDDQ VIH(AC)min VIH(DC)min DC to VREF region Nominal slew rate VREF(DC) Nominal slew rate VIL(DC)max DC to VREF region VIL(AC)max VSS ΔTR ΔTF Figure 26: Tangent Line for tIH CK CK# VDDQ VIH(AC)min Nominal line VIH(DC)min DC to VREF region tIS tIH tIS tIH Tangent line VREF(DC) Tangent line VIL(DC)max Nominal line DC to VREF region VIL(AC)max VSS ΔTR Tangent line (VREF[DC] - VIL[DC]max) Hold slew rate = rising signal ΔTR ΔTF Hold slew rate Tangent line (VIH[DC]min - VREF[DC]) = falling signal ΔTF PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 59 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Table 30: DDR2-400/533 tDS, tDH Derating Values with Differential Strobe All units are shown in picoseconds DQ Slew Rate (V/ns) 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 DQS, DQS# Differential Slew Rate 4.0 V/ns tDS 3.0 V/ns tDS 2.0 V/ns tDS 1.8 V/ns tDS 1.6 V/ns tDS 1.4 V/ns tDS 1.2 V/ns tDS 1.0 V/ns tDS 0.8 V/ns tDS Δ tDH Δ Δ tDH Δ Δ tDH Δ Δ – tDH Δ – Δ – – tDH Δ – – Δ – – – tDH Δ – – – Δ – – – – tDH Δ – – – – Δ – – – – – tDH Δ – – – – – 6 Δ – – – – – – 5 tDH Δ – – – – – – 125 83 0 – – – – – – 45 21 0 – – – – – – 125 83 0 –11 – – – – – Notes: 45 21 0 –14 – – – – – 125 83 0 –11 –25 – – – – 45 21 0 –14 –31 – – – – 95 12 1 –13 –31 – – – 33 12 –2 –19 –42 – – – 24 13 –1 –19 –43 – – 24 10 –7 –30 –59 – – 25 11 –7 –31 –74 – 22 5 –18 –47 –89 – 23 5 –19 –62 17 –6 –35 –77 17 –7 –50 –23 –65 –11 –53 –38 –127 –140 –115 –128 –103 –116 1. For all input signals, the total tDS and tDH required is calculated by adding the data sheet value to the derating value listed in Table 30. 2. tDS nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min. tDS nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If the actual signal is always earlier than the nominal slew rate line between the shaded “VREF(DC) to AC region,” use the nominal slew rate for the derating value (see Figure 27 (page 64)). If the actual signal is later than the nominal slew rate line anywhere between the shaded “VREF(DC) to AC region,” the slew rate of a tangent line to the actual signal from the AC level to DC level is used for the derating value (see Figure 28 (page 64)). 3. tDH nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC). tDH nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If the actual signal is always later than the nominal slew rate line between the shaded “DC level to VREF(DC) region,” use the nominal slew rate for the derating value (see Figure 29 (page 65)). If the actual signal is earlier than the nominal slew rate line anywhere between shaded “DC to VREF(DC) region,” the slew rate of a tangent line to the actual signal from the DC level to VREF(DC) level is used for the derating value (see Figure 30 (page 65)). 4. Although the total setup time might be negative for slow slew rates (a valid input signal will not have reached VIH[AC]/VIL[AC] at the time of the rising clock transition), a valid input signal is still required to complete the transition and reach VIH(AC)/VIL(AC). 5. For slew rates between the values listed in this table, the derating values may be obtained by linear interpolation. 6. These values are typically not subject to production test. They are verified by design and characterization. 7. Single-ended DQS requires special derating. The values in Table 32 (page 62) are the DQS single-ended slew rate derating with DQS referenced at VREF and DQ referenced at the logic levels tDSb and tDHb. Converting the derated base values from DQ referenced to the AC/DC trip points to DQ referenced to VREF is listed in Table 34 (page 63) and Table 35 (page 63). Table 34 provides the VREF-based fully derated values for the DQ (tDSa and tDHa) for DDR2-533. Table 35 provides the VREF-based fully derated values for the DQ (tDSa and tDHa) for DDR2-400. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 60 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Table 31: DDR2-667/800/1066 tDS, tDH Derating Values with Differential Strobe All units are shown in picoseconds DQ Slew Rate (V/ns) 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 DQS, DQS# Differential Slew Rate 2.8 V/ns tDS 2.4 V/ns tDS 2.0 V/ns tDS 1.8 V/ns tDS 1.6 V/ns tDS 1.4 V/ns tDS 1.2 V/ns tDS 1.0 V/ns tDS 0.8 V/ns tDS Δ tDH Δ Δ tDH Δ Δ tDH Δ Δ tDH Δ Δ tDH Δ Δ tDH Δ Δ tDH Δ Δ tDH Δ Δ tDH Δ 100 67 0 –5 –13 –22 –34 –60 63 42 0 –14 –31 –54 –83 –125 100 67 0 –5 –13 –22 –34 –60 63 42 0 –14 –31 –54 –83 –125 100 67 0 –5 –13 –22 –34 –60 63 42 0 –14 –31 –54 –83 –125 112 79 12 7 –1 –10 –22 –48 –88 75 54 12 –2 –19 –42 –71 –113 –176 124 91 24 19 11 2 –10 –36 –76 87 66 24 10 –7 –30 –59 –101 –164 136 103 36 31 23 14 2 –24 –64 99 78 36 22 5 –18 –47 –89 –152 148 115 48 43 35 26 14 –12 –52 111 90 48 34 17 –6 –35 –77 –140 160 127 60 55 47 38 26 0 –40 123 102 60 46 29 6 –23 –65 –128 172 139 72 67 59 50 38 12 –28 135 114 72 58 41 18 –11 –53 –116 –100 –188 –100 –188 –100 –188 Notes: 1. For all input signals the total tDS and tDH required is calculated by adding the data sheet value to the derating value listed in Table 31. 2. tDS nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min. tDS nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If the actual signal is always earlier than the nominal slew rate line between the shaded “VREF(DC) to AC region,” use the nominal slew rate for the derating value (see Figure 27 (page 64)). If the actual signal is later than the nominal slew rate line anywhere between shaded “VREF(DC) to AC region,” the slew rate of a tangent line to the actual signal from the AC level to DC level is used for the derating value (see Figure 28 (page 64)). 3. tDH nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC). tDH nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If the actual signal is always later than the nominal slew rate line between the shaded “DC level to VREF(DC) region,” use the nominal slew rate for the derating value (see Figure 29 (page 65)). If the actual signal is earlier than the nominal slew rate line anywhere between the shaded “DC to VREF(DC) region,” the slew rate of a tangent line to the actual signal from the DC level to VREF(DC) level is used for the derating value (see Figure 30 (page 65)). 4. Although the total setup time might be negative for slow slew rates (a valid input signal will not have reached VIH[AC]/VIL[AC] at the time of the rising clock transition), a valid input signal is still required to complete the transition and reach VIH(AC)/VIL(AC). 5. For slew rates between the values listed in this table, the derating values may be obtained by linear interpolation. 6. These values are typically not subject to production test. They are verified by design and characterization. 7. Single-ended DQS requires special derating. The values in Table 32 (page 62) are the DQS single-ended slew rate derating with DQS referenced at VREF and DQ referenced at the logic levels tDSb and tDHb. Converting the derated base values from DQ referenced to the AC/DC trip points to DQ referenced to VREF is listed in Table 33 (page 62). Table 33 provides the VREF-based fully derated values for the DQ (tDSa and tDHa) for PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 61 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating DDR2-667. It is not advised to operate DDR2-800 and DDR2-1066 devices with singleended DQS; however, Table 32 would be used with the base values. Table 32: Single-Ended DQS Slew Rate Derating Values Using tDSb and tDHb Reference points indicated in bold; Derating values are to be used with base tDSb- and tDHb--specified values DQS Single-Ended Slew Rate Derated (at VREF) 2.0 V/ns DQ (V/ns) 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 tDS tDH 1.8 V/ns tDS tDH 1.6 V/ns tDS tDH 1.4 V/ns tDS tDH 1.2 V/ns tDS tDH 1.0 V/ns tDS tDH 0.8 V/ns tDS tDH 0.6 V/ns tDS tDH 0.4 V/ns tDS tDH 130 97 30 25 17 5 –7 53 32 –10 –24 –41 –64 –93 130 97 30 25 17 5 –7 53 32 –10 –24 –41 –64 –93 130 97 30 25 17 5 –7 53 32 –10 –24 –41 –64 –93 130 97 30 25 17 5 –7 53 32 –10 –24 –41 –64 –93 130 97 30 25 17 5 –7 53 32 –10 –24 –41 –64 –93 145 112 45 40 32 20 8 48 27 –15 –29 –46 –69 –98 155 122 55 50 42 30 18 –3 45 24 –18 –32 –49 –72 –102 –143 165 132 65 60 52 40 28 7 41 20 –22 –36 –53 –75 –105 –147 175 142 75 70 61 50 38 17 38 17 –25 –39 –56 –79 –108 –150 –28 –135 –28 –135 –28 –135 –28 –135 –28 –135 –13 –140 –78 –198 –78 –198 –78 –198 –78 –198 –78 –198 –63 –203 –53 –206 –43 –210 –33 –213 Table 33: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-667 Reference points indicated in bold DQS Single-Ended Slew Rate Derated (at VREF) 2.0 V/ns DQ (V/ns) 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 tDS tDH 1.8 V/ns tDS tDH 1.6 V/ns tDS tDH 1.4 V/ns tDS tDH 1.2 V/ns tDS tDH 1.0 V/ns tDS tDH 0.8 V/ns tDS tDH 0.6 V/ns tDS tDH 0.4 V/ns tDS tDH 330 330 330 347 367 391 426 472 522 291 290 290 290 290 290 290 290 289 330 330 330 347 367 391 426 472 522 291 290 290 290 290 290 290 290 289 330 330 330 347 367 391 426 472 522 291 290 290 290 290 290 290 290 289 330 330 330 347 367 391 426 472 522 291 290 290 290 290 290 290 290 289 330 330 330 347 367 391 426 472 522 291 290 290 290 290 290 290 290 289 345 345 345 362 382 406 441 487 537 286 285 285 285 285 285 285 285 284 355 355 355 372 392 416 451 497 547 282 282 282 282 282 281 282 282 281 365 365 365 382 402 426 461 507 557 29 279 278 278 278 278 278 278 278 375 375 375 392 412 436 471 517 567 276 275 275 275 275 275 275 275 274 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 62 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Table 34: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-533 Reference points indicated in bold DQS Single-Ended Slew Rate Derated (at VREF) 2.0 V/ns DQ (V/ns) 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 tDS tDH 1.8 V/ns tDS tDH 1.6 V/ns tDS tDH 1.4 V/ns tDS tDH 1.2 V/ns tDS tDH 1.0 V/ns tDS tDH 0.8 V/ns tDS tDH 0.6 V/ns tDS tDH 0.4 V/ns tDS tDH 355 364 380 402 429 463 510 572 647 341 340 340 340 340 340 340 340 339 355 364 380 402 429 463 510 572 647 341 340 340 340 340 340 340 340 339 355 364 380 402 429 463 510 572 647 341 340 340 340 340 340 340 340 339 355 364 380 402 429 463 510 572 647 341 340 340 340 340 340 340 340 339 355 364 380 402 429 463 510 572 647 341 340 340 340 340 340 340 340 339 370 379 395 417 444 478 525 587 662 336 335 335 335 335 335 335 335 334 380 389 405 427 454 488 535 597 672 332 332 332 332 332 331 332 332 331 390 399 415 437 464 498 545 607 682 329 329 328 328 328 328 328 328 328 400 409 425 447 474 508 555 617 692 326 325 325 325 325 325 325 325 324 Table 35: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-400 Reference points indicated in bold DQS Single-Ended Slew Rate Derated (at VREF) 2.0 V/ns DQ (V/ns) 2.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 tDS tDH 1.8 V/ns tDS tDH 1.6 V/ns tDS tDH 1.4 V/ns tDS tDH 1.2 V/ns tDS tDH 1.0 V/ns tDS tDH 0.8 V/ns tDS tDH 0.6 V/ns tDS tDH 0.4 V/ns tDS tDH 405 414 430 452 479 513 560 622 697 391 390 390 390 390 390 390 390 389 405 414 430 452 479 513 560 622 697 391 390 390 390 390 390 390 390 389 405 414 430 452 479 513 560 622 697 391 390 390 390 390 390 390 390 389 405 414 430 452 479 513 560 622 697 391 390 390 390 390 390 390 390 389 405 414 430 452 479 513 560 622 697 391 390 390 390 390 390 390 390 389 420 429 445 467 494 528 575 637 712 386 385 385 385 385 385 385 385 384 430 439 455 477 504 538 585 647 722 382 382 382 382 382 381 382 382 381 440 449 465 487 514 548 595 657 732 379 379 378 378 378 378 378 378 378 450 459 475 497 524 558 605 667 742 376 375 375 375 375 375 375 375 374 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 63 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Figure 27: Nominal Slew Rate for tDS DQS1 DQS#1 tDS VDDQ VIH(AC)min tDH tDS tDH VREF to AC region VIH(DC)min Nominal slew rate VREF(DC) Nominal slew rate VIL(DC)max VREF to AC region VIL(AC)max VSS ΔTF VREF(DC) - VIL(AC)max ΔTF ΔTR VIH(AC)min - VREF(DC) Setup slew rate = rising signal ΔTR Setup slew rate = falling signal Note: 1. DQS, DQS# signals must be monotonic between VIL(DC)max and VIH(DC)min. Figure 28: Tangent Line for tDS DQS1 DQS#1 t DS t DH t t DH VDDQ DS VIH(AC)min VREF to AC region VIH(DC)min Nominal line Tangent line VREF(DC) Tangent line VIL(DC)max Nominal line VREF to AC region VIL(AC)max ΔTF VSS Setup slew rate = falling signal Tangent line (VREF[DC] - VIL[AC]max) ΔTF Tangent line (V IH[AC]min - VREF[DC]) Setup slew rate = rising signal ΔTR ΔTR Note: 1. DQS, DQS# signals must be monotonic between VIL(DC)max and VIH(DC)min. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 64 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Figure 29: Nominal Slew Rate for tDH DQS1 DQS#1 tIS tIH tIS tIH VDDQ VIH(AC)min VIH(DC)min DC to VREF region Nominal slew rate VREF(DC) Nominal slew rate VIL(DC)max DC to VREF region VIL(AC)max VSS ΔTR Hold slew rate VREF(DC) - VIL(DC)max = rising signal ΔTR ΔTF Hold slew rate VIH(DC)min - VREF(DC) = falling signal ΔTF Note: 1. DQS, DQS# signals must be monotonic between VIL(DC)max and VIH(DC)min. Figure 30: Tangent Line for tDH DQS1 DQS#1 VDDQ VIH(AC)min Nominal line VIH(DC)min DC to VREF region tIS tIH tIS tIH Tangent line VREF(DC) Tangent line VIL(DC)max DC to VREF region Nominal line VIL(AC)max VSS Hold slew rate = rising signal Tangent line (VREF[DC] - VIL[DC]max) ΔTR ΔTF ΔTR Hold slew rate Tangent line (VIH[DC]min - VREF[DC]) = falling signal ΔTF Note: 1. DQS, DQS# signals must be monotonic between VIL(DC)max and VIH(DC)min. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 65 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Figure 31: AC Input Test Signal Waveform Command/Address Balls CK# CK Logic levels tIS b tIH b tIS b tIH b VDDQ Vswing (MAX) VIH(AC)min VIH(DC)min VREF(DC) VIL(DC)min VIL(AC)min VSSQ VREF levels tIS a tIH a tIS a tIH a Figure 32: AC Input Test Signal Waveform for Data with DQS, DQS# (Differential) DQS# DQS tDS b Logic levels VDDQ VIH(AC)min Vswing (MAX) VIH(DC)min VREF(DC) VIL(DC)max VIL(AC)max VSSQ VREF levels tDS a tDH a tDS a tDH a tDH b tDS b tDH b PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 66 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Figure 33: AC Input Test Signal Waveform for Data with DQS (Single-Ended) VREF DQS tDS b tDH b tDS b tDH b Logic levels VDDQ VIH(AC)min Vswing (MAX) VIH(DC)min VREF(DC) VIL(DC)max VIL(AC)max VSSQ VREF levels tDS a tDH a tDS a tDH a Figure 34: AC Input Test Signal Waveform (Differential) VDDQ VTR Vswing Crossing point VIX VCP VSSQ PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 67 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Commands Commands Truth Tables The following tables provide a quick reference of available DDR2 SDRAM commands, including CKE power-down modes and bank-to-bank commands. Table 36: Truth Table – DDR2 Commands Notes: 1–3 apply to the entire table CKE Function LOAD MODE REFRESH SELF REFRESH entry SELF REFRESH exit Single bank PRECHARGE All banks PRECHARGE Bank ACTIVATE WRITE WRITE with auto precharge READ READ with auto precharge NO OPERATION Device DESELECT Power-down entry Power-down exit Previous Cycle H H H L H H H H H H H H H H L Current Cycle H H L H H H H H H H H X X L H CS# L L L H L L L L L L L L L H H L H L Notes: RAS# L L L X H L L L H H H H H X X H X H CAS# L L L X H H H H L L L L H X X H X H WE# L H H X H L L H L L H H H X X H X H X X X X 9 BA X BA BA BA BA BA X X X X X Column address Column address Column address Column address X X X L H Row address L H L H X X X X X 4 Column 4, 5, 6, address 8 Column 4, 5, 6, address 8 Column 4, 5, 6, address 8 Column 4, 5, 6, address 8 X X X 9 6 BA2– BA0 An–A11 BA X X X X X X A10 OP code X X X X X X 4, 7 A9–A0 Notes 4, 6 1. All DDR2 SDRAM commands are defined by states of CS#, RAS#, CAS#, WE#, and CKE at the rising edge of the clock. 2. The state of ODT does not affect the states described in this table. The ODT function is not available during self refresh. See ODT Timing (page 125) for details. 3. “X” means “H or L” (but a defined logic level) for valid IDD measurements. 4. BA2 is only applicable for densities ≥1Gb. 5. An n is the most significant address bit for a given density and configuration. Some larger address bits may be “Don’t Care” during column addressing, depending on density and configuration. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 68 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Commands 6. Bank addresses (BA) determine which bank is to be operated upon. BA during a LOAD MODE command selects which mode register is programmed. 7. SELF REFRESH exit is asynchronous. 8. Burst reads or writes at BL = 4 cannot be terminated or interrupted. See Figure 48 (page 94) and Figure 60 (page 105) for other restrictions and details. 9. The power-down mode does not perform any REFRESH operations. The duration of powerdown is limited by the refresh requirements outlined in the AC parametric section. Table 37: Truth Table – Current State Bank n – Command to Bank n Notes: 1–6 apply to the entire table Current State CS# RAS# CAS# Any Idle H L L L L Row active L L L Read (auto precharge disabled) Write (auto precharge disabled) L L L L L L X H L L L H H L H H L H H L Notes: X H H L L L L H L L H L L H WE# X H H H L H L L H L L H L L Command/Action DESELECT (NOP/continue previous operation) NO OPERATION (NOP/continue previous operation) ACTIVATE (select and activate row) REFRESH LOAD MODE READ (select column and start READ burst) WRITE (select column and start WRITE burst) PRECHARGE (deactivate row in bank or banks) READ (select column and start new READ burst) WRITE (select column and start WRITE burst) PRECHARGE (start PRECHARGE) READ (select column and start READ burst) WRITE (select column and start new WRITE burst) PRECHARGE (start PRECHARGE) Notes 7 7 8 8 9 8 8, 10 9 8 8 9 1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH and after tXSNR has been met (if the previous state was self refresh). 2. This table is bank-specific, except where noted (the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when in that state). Exceptions are covered in the notes below. 3. Current state definitions: The bank has been precharged, tRP has been met, and any READ burst is complete. A row in the bank has been activated, and tRCD has been met. No data bursts/ Row active: accesses and no register accesses are in progress. Read: A READ burst has been initiated, with auto precharge disabled and has not yet terminated. Write: A WRITE burst has been initiated with auto precharge disabled and has not yet terminated. Idle: 4. The following states must not be interrupted by a command issued to the same bank. Issue DESELECT or NOP commands, or allowable commands to the other bank, on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and this table, and according to Table 38 (page 71). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 69 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Commands Starts with registration of a PRECHARGE command and ends when tRP is met. After tRP is met, the bank will be in the idle state. Read with au- Starts with registration of a READ command with auto precharge enato precharge bled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. enabled: Row activate: Starts with registration of an ACTIVATE command and ends when tRCD is met. After tRCD is met, the bank will be in the row active state. Write with au- Starts with registration of a WRITE command with auto precharge enato precharge bled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. enabled: 5. The following states must not be interrupted by any executable command (DESELECT or NOP commands must be applied on each positive clock edge during these states): Precharge: Starts with registration of a REFRESH command and ends when tRFC is met. After tRFC is met, the DDR2 SDRAM will be in the all banks idle state. Starts with registration of the LOAD MODE command and ends when Accessing tMRD has been met. After tMRD is met, the DDR2 SDRAM will be in the mode all banks idle state. register: Precharge Starts with registration of a PRECHARGE ALL command and ends when tRP is met. After tRP is met, all banks will be in the idle state. all: All states and sequences not shown are illegal or reserved. Not bank-specific; requires that all banks are idle and bursts are not in progress. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. May or may not be bank-specific; if multiple banks are to be precharged, each must be in a valid state for precharging. A WRITE command may be applied after the completion of the READ burst. Refresh: 6. 7. 8. 9. 10. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 70 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Commands Table 38: Truth Table – Current State Bank n – Command to Bank m Notes: 1–6 apply to the entire table Current State CS# RAS# CAS# Any Idle Row active, active, or precharge H L X L L L L Read (auto precharge disabled) L L L L Write (auto precharge disabled) L L L L Read (with auto precharge) L L L L Write (with auto precharge) L L L L Notes: X H X L H H L L H H L L H H L L H H L L H H L X H X H L L H H L L H H L L H H L L H H L L H WE# X H X H H L L H H L L H H L L H H L L H H L L Command/Action DESELECT (NOP/continue previous operation) NO OPERATION (NOP/continue previous operation) Any command otherwise allowed to bank m ACTIVATE (select and activate row) READ (select column and start READ burst) WRITE (select column and start WRITE burst) PRECHARGE ACTIVATE (select and activate row) READ (select column and start new READ burst) WRITE (select column and start WRITE burst) PRECHARGE ACTIVATE (select and activate row) READ (select column and start READ burst) WRITE (select column and start new WRITE burst) PRECHARGE ACTIVATE (select and activate row) READ (select column and start new READ burst) WRITE (select column and start WRITE burst) PRECHARGE ACTIVATE (select and activate row) READ (select column and start READ burst) WRITE (select column and start new WRITE burst) PRECHARGE 7, 10 7 7 7, 8 7, 9, 10 7 7 7, 8 7 7 Notes 1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH and after tXSNR has been met (if the previous state was self refresh). 2. This table describes an alternate bank operation, except where noted (the current state is for bank n and the commands shown are those allowed to be issued to bank m, assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in the notes below. 3. Current state definitions: Idle: Row active: Read: Write: The bank has been precharged, tRP has been met, and any READ burst is complete. A row in the bank has been activated and tRCD has been met. No data bursts/accesses and no register accesses are in progress. A READ burst has been initiated with auto precharge disabled and has not yet terminated. A WRITE burst has been initiated with auto precharge disabled and has not yet terminated. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 71 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Commands The READ with auto precharge enabled or WRITE with auto precharge enabled states can each be broken into two parts: the access period and the precharge period. For READ with auto precharge, the precharge period is defined as if the same burst was executed with auto precharge disabled and then followed with the earliest possible PRECHARGE command that still accesses all of the data in the burst. For WRITE with auto precharge, the precharge period begins when tWR ends, with tWR measured as if auto precharge was disabled. The access period starts with registration of the command and ends where the precharge period (or tRP) begins. This device supports concurrent auto precharge such that when a READ with auto precharge is enabled or a WRITE with auto precharge is enabled, any command to other banks is allowed, as long as that command does not interrupt the read or write data transfer already in process. In either case, all other related limitations apply (contention between read data and write data must be avoided). The minimum delay from a READ or WRITE command with auto precharge enabled to a command to a different bank is summarized in Table 39 (page 72). REFRESH and LOAD MODE commands may only be issued when all banks are idle. Not used. All states and sequences not shown are illegal or reserved. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. A WRITE command may be applied after the completion of the READ burst. Requires appropriate DM. The number of clock cycles required to meet tWTR is either two or tWTR/tCK, whichever is greater. READ with auto precharge enabled/ WRITE with auto precharge enabled: 4. 5. 6. 7. 8. 9. 10. Table 39: Minimum Delay with Auto Precharge Enabled From Command (Bank n) WRITE with auto precharge To Command (Bank m) READ or READ with auto precharge WRITE or WRITE with auto precharge PRECHARGE or ACTIVATE READ with auto precharge READ or READ with auto precharge WRITE or WRITE with auto precharge PRECHARGE or ACTIVATE Minimum Delay (with Concurrent Auto Precharge) (CL - 1) + (BL/2) + (BL/2) 1 (BL/2) (BL/2) + 2 1 tWTR Units tCK tCK tCK tCK tCK tCK DESELECT The DESELECT function (CS# HIGH) prevents new commands from being executed by the DDR2 SDRAM. The DDR2 SDRAM is effectively deselected. Operations already in progress are not affected. DESELECT is also referred to as COMMAND INHIBIT. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 72 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Commands NO OPERATION (NOP) The NO OPERATION (NOP) command is used to instruct the selected DDR2 SDRAM to perform a NOP (CS# is LOW; RAS#, CAS#, and WE are HIGH). This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. LOAD MODE (LM) The mode registers are loaded via bank address and address inputs. The bank address balls determine which mode register will be programmed. See Mode Register (MR) (page 74). The LM command can only be issued when all banks are idle, and a subsequent executable command cannot be issued until tMRD is met. ACTIVATE The ACTIVATE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the bank address inputs determines the bank, and the address inputs select the row. This row remains active (or open) for accesses until a precharge command is issued to that bank. A precharge command must be issued before opening a different row in the same bank. READ The READ command is used to initiate a burst read access to an active row. The value on the bank address inputs determine the bank, and the address provided on address inputs A0–Ai (where Ai is the most significant column address bit for a given configuration) selects the starting column location. The value on input A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the read burst; if auto precharge is not selected, the row will remain open for subsequent accesses. DDR2 SDRAM also supports the AL feature, which allows a READ or WRITE command to be issued prior to tRCD (MIN) by delaying the actual registration of the READ/WRITE command to the internal device by AL clock cycles. WRITE The WRITE command is used to initiate a burst write access to an active row. The value on the bank select inputs selects the bank, and the address provided on inputs A0–Ai (where Ai is the most significant column address bit for a given configuration) selects the starting column location. The value on input A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the WRITE burst; if auto precharge is not selected, the row will remain open for subsequent accesses. DDR2 SDRAM also supports the AL feature, which allows a READ or WRITE command to be issued prior to tRCD (MIN) by delaying the actual registration of the READ/WRITE command to the internal device by AL clock cycles. Input data appearing on the DQ is written to the memory array subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered LOW, the corresponding data will be written to memory; if the DM signal is registered HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location (see Figure 65 (page 110)). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 73 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Mode Register (MR) PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row activation a specified time (tRP) after the PRECHARGE command is issued, except in the case of concurrent auto precharge, where a READ or WRITE command to a different bank is allowed as long as it does not interrupt the data transfer in the current bank and does not violate any other timing parameters. After a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command is allowed if there is no open row in that bank (idle state) or if the previously open row is already in the process of precharging. However, the precharge period will be determined by the last PRECHARGE command issued to the bank. REFRESH REFRESH is used during normal operation of the DDR2 SDRAM and is analogous to CAS#before-RAS# (CBR) REFRESH. All banks must be in the idle mode prior to issuing a REFRESH command. This command is nonpersistent, so it must be issued each time a refresh is required. The addressing is generated by the internal refresh controller. This makes the address bits a “Don’t Care” during a REFRESH command. SELF REFRESH The SELF REFRESH command can be used to retain data in the DDR2 SDRAM, even if the rest of the system is powered down. When in the self refresh mode, the DDR2 SDRAM retains data without external clocking. All power supply inputs (including Vref) must be maintained at valid levels upon entry/exit and during SELF REFRESH operation. The SELF REFRESH command is initiated like a REFRESH command except CKE is LOW. The DLL is automatically disabled upon entering self refresh and is automatically enabled upon exiting self refresh. Mode Register (MR) The mode register is used to define the specific mode of operation of the DDR2 SDRAM. This definition includes the selection of a burst length, burst type, CAS latency, operating mode, DLL RESET, write recovery, and power-down mode, as shown in Figure 35 (page 75). Contents of the mode register can be altered by re-executing the LOAD MODE (LM) command. If the user chooses to modify only a subset of the MR variables, all variables must be programmed when the command is issued. The MR is programmed via the LM command and will retain the stored information until it is programmed again or until the device loses power (except for bit M8, which is self-clearing). Reprogramming the mode register will not alter the contents of the memory array, provided it is performed correctly. The LM command can only be issued (or reissued) when all banks are in the precharged state (idle state) and no bursts are in progress. The controller must wait the specified time tMRD before initiating any subsequent operations such as an ACTIVATE command. Violating either of these requirements will result in an unspecified operation. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 74 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Mode Register (MR) Burst Length Burst length is defined by bits M0–M2, as shown in Figure 35. Read and write accesses to the DDR2 SDRAM are burst-oriented, with the burst length being programmable to either four or eight. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A2–Ai when BL = 4 and by A3–Ai when BL = 8 (where Ai is the most significant column address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. The programmed burst length applies to both read and write bursts. Figure 35: MR Definition 1 2 BA2 BA1 BA0 An A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus 16 15 14 n 12 11 10 0 MR WR 0 PD 9 8 7 6 5 4 3 2 1 0 Mode Register (Mx) DLL TM CAS# Latency BT Burst Length M12 PD Mode 0 Fast exit (normal) 1 Slow exit (low power) M7 Mode 0 Normal 1 Test M2 M1 M0 Burst Length 0 0 0 0 1 1 1 1 M3 0 1 M6 M5 M4 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 Reserved Reserved 4 8 Reserved Reserved Reserved Reserved M8 DLL Reset 0 1 No Yes M11 M10 M9 0 0 0 0 1 1 1 1 M15 M14 0 0 1 1 0 1 0 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 Write Recovery Reserved 2 3 4 5 6 7 8 Burst Type Sequential Interleaved CAS Latency (CL) Reserved Reserved Reserved 3 4 5 6 7 Mode Register Definition Mode register (MR) Extended mode register (EMR) Extended mode register (EMR2) Extended mode register (EMR3) Notes: 1. M16 (BA2) is only applicable for densities ≥1Gb, reserved for future use, and must be programmed to “0.” 2. Mode bits (Mn) with corresponding address balls (An) greater than M12 (A12) are reserved for future use and must be programmed to “0.” 3. Not all listed WR and CL options are supported in any individual speed grade. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 75 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Mode Register (MR) Burst Type Accesses within a given burst may be programmed to be either sequential or interleaved. The burst type is selected via bit M3, as shown in Figure 35. The ordering of accesses within a burst is determined by the burst length, the burst type, and the starting column address, as shown in Table 40. DDR2 SDRAM supports 4-bit burst mode and 8-bit burst mode only. For 8-bit burst mode, full interleaved address ordering is supported; however, sequential address ordering is nibble-based. Table 40: Burst Definition Burst Length 4 Starting Column Address (A2, A1, A0) 00 01 10 11 8 000 001 010 011 100 101 110 111 Order of Accesses Within a Burst Burst Type = Sequential 0, 1, 2, 3 1, 2, 3, 0 2, 3, 0, 1 3, 0, 1, 2 0, 1, 2, 3, 4, 5, 6, 7 1, 2, 3, 0, 5, 6, 7, 4 2, 3, 0, 1, 6, 7, 4, 5 3, 0, 1, 2, 7, 4, 5, 6 4, 5, 6, 7, 0, 1, 2, 3 5, 6, 7, 4, 1, 2, 3, 0 6, 7, 4, 5, 2, 3, 0, 1 7, 4, 5, 6, 3, 0, 1, 2 Burst Type = Interleaved 0, 1, 2, 3 1, 0, 3, 2 2, 3, 0, 1 3, 2, 1, 0 0, 1, 2, 3, 4, 5, 6, 7 1, 0, 3, 2, 5, 4, 7, 6 2, 3, 0, 1, 6, 7, 4, 5 3, 2, 1, 0, 7, 6, 5, 4 4, 5, 6, 7, 0, 1, 2, 3 5, 4, 7, 6, 1, 0, 3, 2 6, 7, 4, 5, 2, 3, 0, 1 7, 6, 5, 4, 3, 2, 1, 0 Operating Mode The normal operating mode is selected by issuing a command with bit M7 set to “0,” and all other bits set to the desired values, as shown in Figure 35 (page 75). When bit M7 is “1,” no other bits of the mode register are programmed. Programming bit M7 to “1” places the DDR2 SDRAM into a test mode that is only used by the manufacturer and should not be used. No operation or functionality is guaranteed if M7 bit is “1.” DLL RESET DLL RESET is defined by bit M8, as shown in Figure 35. Programming bit M8 to “1” will activate the DLL RESET function. Bit M8 is self-clearing, meaning it returns back to a value of “0” after the DLL RESET function has been issued. Anytime the DLL RESET function is used, 200 clock cycles must occur before a READ command can be issued to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a violation of the tAC or tDQSCK parameters. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 76 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Mode Register (MR) Write Recovery Write recovery (WR) time is defined by bits M9–M11, as shown in Figure 35 (page 75). The WR register is used by the DDR2 SDRAM during WRITE with auto precharge operation. During WRITE with auto precharge operation, the DDR2 SDRAM delays the internal auto precharge operation by WR clocks (programmed in bits M9–M11) from the last data burst. An example of WRITE with auto precharge is shown in Figure 64 (page 109). WR values of 2, 3, 4, 5, 6, 7, or 8 clocks may be used for programming bits M9–M11. The user is required to program the value of WR, which is calculated by dividing tWR (in nanoseconds) by tCK (in nanoseconds) and rounding up a noninteger value to the next integer; WR (cycles) = tWR (ns)/tCK (ns). Reserved states should not be used as an unknown operation or incompatibility with future versions may result. Power-Down Mode Active power-down (PD) mode is defined by bit M12, as shown in Figure 35. PD mode enables the user to determine the active power-down mode, which determines performance versus power savings. PD mode bit M12 does not apply to precharge PD mode. When bit M12 = 0, standard active PD mode, or “fast-exit” active PD mode, is enabled. The tXARD parameter is used for fast-exit active PD exit timing. The DLL is expected to be enabled and running during this mode. When bit M12 = 1, a lower-power active PD mode, or “slow-exit” active PD mode, is enabled. The tXARDS parameter is used for slow-exit active PD exit timing. The DLL can be enabled but “frozen” during active PD mode because the exit-to-READ command timing is relaxed. The power difference expected between IDD3P normal and IDD3P lowpower mode is defined in the DDR2 IDD Specifications and Conditions table. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 77 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Mode Register (MR) CAS Latency (CL) The CAS latency (CL) is defined by bits M4–M6, as shown in Figure 35 (page 75). CL is the delay, in clock cycles, between the registration of a READ command and the availability of the first bit of output data. The CL can be set to 3, 4, 5, 6, or 7 clocks, depending on the speed grade option being used. DDR2 SDRAM does not support any half-clock latencies. Reserved states should not be used as an unknown operation otherwise incompatibility with future versions may result. DDR2 SDRAM also supports a feature called posted CAS additive latency (AL). This feature allows the READ command to be issued prior to tRCD (MIN) by delaying the internal command to the DDR2 SDRAM by AL clocks. The AL feature is described in further detail in Posted CAS Additive Latency (AL) (page 81). Examples of CL = 3 and CL = 4 are shown in Figure 36; both assume AL = 0. If a READ command is registered at clock edge n, and the CL is m clocks, the data will be available nominally coincident with clock edge n + m (this assumes AL = 0). Figure 36: CL CK# CK Command DQS, DQS# DO n CL = 3 (AL = 0) DO n+1 DO n+2 DO n+3 READ NOP NOP NOP NOP NOP NOP T0 T1 T2 T3 T4 T5 T6 DQ CK# CK Command DQS, DQS# T0 T1 T2 T3 T4 T5 T6 READ NOP NOP NOP NOP NOP NOP DQ CL = 4 (AL = 0) DO n DO n+1 DO n+2 DO n+3 Transitioning data Don’t care Notes: 1. BL = 4. 2. Posted CAS# additive latency (AL) = 0. 3. Shown with nominal tAC, tDQSCK, and tDQSQ. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 78 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Extended Mode Register (EMR) Extended Mode Register (EMR) The extended mode register controls functions beyond those controlled by the mode register; these additional functions are DLL enable/disable, output drive strength, ondie termination (ODT), posted AL, off-chip driver impedance calibration (OCD), DQS# enable/disable, RDQS/RDQS# enable/disable, and output disable/enable. These functions are controlled via the bits shown in Figure 37. The EMR is programmed via the LM command and will retain the stored information until it is programmed again or the device loses power. Reprogramming the EMR will not alter the contents of the memory array, provided it is performed correctly. The EMR must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time tMRD before initiating any subsequent operation. Violating either of these requirements could result in an unspecified operation. Figure 37: EMR Definition 1 2 BA2 BA1 BA0 An A12 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus 16 0 15 14 n 12 11 10 9 8 7 6 5 4 3 2 10 MRS 0 Out RDQS DQS# OCD Program RTT Posted CAS# RTT ODS DLL Extended mode register (Ex) E12 0 1 Outputs Enabled Disabled E11 RDQS Enable 0 1 No Yes E0 E6 E2 RTT (Nominal) 00 01 10 11 RTT disabled 75Ω 150Ω 50Ω E1 0 1 0 1 DLL Enable Enable (normal) Disable (test/debug) Output Drive Strength Full Reduced E10 DQS# Enable 0 1 Enable Disable 3 E5 E4 E3 Posted CAS# Additive Latency (AL) 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 0 1 2 3 4 5 6 Reserved 4 E9 E8 E7 OCD Operation 0 0 0 1 1 E15 E14 0 0 1 1 0 1 0 1 0 0 1 0 1 0 1 0 0 1 OCD exit Reserved Reserved Reserved Enable OCD defaults Mode Register Set Mode register (MR) Extended mode register (EMR) Extended mode register (EMR2) Extended mode register (EMR3) Notes: 1. E16 (BA2) is only applicable for densities ≥1Gb, reserved for future use, and must be programmed to “0.” 2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are reserved for future use and must be programmed to “0.” 3. Not all listed AL options are supported in any individual speed grade. 4. As detailed in the Initialization (page 85) section notes, during initialization of the OCD operation, all three bits must be set to “1” for the OCD default state, then set to “0” before initialization is finished. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 79 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Extended Mode Register (EMR) DLL Enable/Disable The DLL may be enabled or disabled by programming bit E0 during the LM command, as shown in Figure 37 (page 79). These specifications are applicable when the DLL is enabled for normal operation. DLL enable is required during power-up initialization and upon returning to normal operation after having disabled the DLL for the purpose of debugging or evaluation. Enabling the DLL should always be followed by resetting the DLL using the LM command. The DLL is automatically disabled when entering SELF REFRESH operation and is automatically re-enabled and reset upon exit of SELF REFRESH operation. Anytime the DLL is enabled (and subsequently reset), 200 clock cycles must occur before a READ command can be issued to allow time for the internal clock to synchronize with the external clock. Failing to wait for synchronization to occur may result in a violation of the tAC or tDQSCK parameters. Anytime the DLL is disabled and the device is operated below 25 MHz, any AUTO REFRESH command should be followed by a PRECHARGE ALL command. Output Drive Strength The output drive strength is defined by bit E1, as shown in Figure 37. The normal drive strength for all outputs is specified to be SSTL_18. Programming bit E1 = 0 selects normal (full strength) drive strength for all outputs. Selecting a reduced drive strength option (E1 = 1) will reduce all outputs to approximately 45 to 60 percent of the SSTL_18 drive strength. This option is intended for the support of lighter load and/or point-topoint environments. DQS# Enable/Disable The DQS# ball is enabled by bit E10. When E10 = 0, DQS# is the complement of the differential data strobe pair DQS/DQS#. When disabled (E10 = 1), DQS is used in a singleended mode and the DQS# ball is disabled. When disabled, DQS# should be left floating; however, it may be tied to ground via a 20Ω to 10kΩ resistor. This function is also used to enable/disable RDQS#. If RDQS is enabled (E11 = 1) and DQS# is enabled (E10 = 0), then both DQS# and RDQS# will be enabled. RDQS Enable/Disable The RDQS ball is enabled by bit E11, as shown in Figure 37. This feature is only applicable to the x8 configuration. When enabled (E11 = 1), RDQS is identical in function and timing to data strobe DQS during a READ. During a WRITE operation, RDQS is ignored by the DDR2 SDRAM. Output Enable/Disable The OUTPUT ENABLE function is defined by bit E12, as shown in Figure 37. When enabled (E12 = 0), all outputs (DQ, DQS, DQS#, RDQS, RDQS#) function normally. When disabled (E12 = 1), all outputs (DQ, DQS, DQS#, RDQS, RDQS#) are disabled, thus removing output buffer current. The output disable feature is intended to be used during IDD characterization of read current. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 80 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Extended Mode Register (EMR) On-Die Termination (ODT) ODT effective resistance, RTT(EFF), is defined by bits E2 and E6 of the EMR, as shown in Figure 37 (page 79). The ODT feature is designed to improve signal integrity of the memory channel by allowing the DDR2 SDRAM controller to independently turn on/off ODT for any or all devices. RTT effective resistance values of 50Ω, 75Ω, and 150Ω are selectable and apply to each DQ, DQS/DQS#, RDQS/RDQS#, UDQS/UDQS#, LDQS/LDQS#, DM, and UDM/LDM signals. Bits (E6, E2) determine what ODT resistance is enabled by turning on/off “sw1,” “sw2,” or “sw3.” The ODT effective resistance value is selected by enabling switch “sw1,” which enables all R1 values that are 150Ω each, enabling an effective resistance of 75Ω (RTT2 [EFF] = R2/2). Similarly, if “sw2” is enabled, all R2 values that are 300Ω each, enable an effective ODT resistance of 150Ω (RTT2[EFF] = R2/2). Switch “sw3” enables R1 values of 100Ω, enabling effective resistance of 50Ω. Reserved states should not be used, as an unknown operation or incompatibility with future versions may result. The ODT control ball is used to determine when RTT(EFF) is turned on and off, assuming ODT has been enabled via bits E2 and E6 of the EMR. The ODT feature and ODT input ball are only used during active, active power-down (both fast-exit and slow-exit modes), and precharge power-down modes of operation. ODT must be turned off prior to entering self refresh mode. During power-up and initialization of the DDR2 SDRAM, ODT should be disabled until the EMR command is issued. This will enable the ODT feature, at which point the ODT ball will determine the RTT(EFF) value. Anytime the EMR enables the ODT function, ODT may not be driven HIGH until eight clocks after the EMR has been enabled (see Figure 80 (page 126) for ODT timing diagrams). Off-Chip Driver (OCD) Impedance Calibration The OFF-CHIP DRIVER function is an optional DDR2 JEDEC feature not supported by Micron and thereby must be set to the default state. Enabling OCD beyond the default settings will alter the I/O drive characteristics and the timing and output I/O specifications will no longer be valid (see Initialization (page 85) for proper setting of OCD defaults). Posted CAS Additive Latency (AL) Posted CAS additive latency (AL) is supported to make the command and data bus efficient for sustainable bandwidths in DDR2 SDRAM. Bits E3–E5 define the value of AL, as shown in Figure 37. Bits E3–E5 allow the user to program the DDR2 SDRAM with an AL of 0, 1, 2, 3, 4, 5, or 6 clocks. Reserved states should not be used as an unknown operation or incompatibility with future versions may result. In this operation, the DDR2 SDRAM allows a READ or WRITE command to be issued prior to tRCD (MIN) with the requirement that AL ≤ tRCD (MIN). A typical application using this feature would set AL = tRCD (MIN) - 1 × tCK. The READ or WRITE command is held for the time of the AL before it is issued internally to the DDR2 SDRAM device. RL is controlled by the sum of AL and CL; RL = AL + CL. WRITE latency (WL) is equal to RL minus one clock; WL = AL + CL - 1 × tCK. An example of RL is shown in Figure 38 (page 82). An example of a WL is shown in Figure 39 (page 82). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 81 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Extended Mode Register (EMR) Figure 38: READ Latency T0 T1 T2 T3 T4 T5 T6 T7 T8 CK# CK Command DQS, DQS# ACTIVE n READ n NOP NOP NOP NOP NOP NOP NOP tRCD (MIN) DQ AL = 2 RL = 5 Transitioning Data Don’t Care CL = 3 DO n DO n+1 DO n+2 DO n+3 Notes: 1. BL = 4. 2. Shown with nominal tAC, tDQSCK, and tDQSQ. 3. RL = AL + CL = 5. Figure 39: WRITE Latency T0 T1 T2 T3 T4 T5 T6 T7 CK# CK Command ACTIVE n WRITE n tRCD (MIN) NOP NOP NOP NOP NOP NOP DQS, DQS# AL = 2 DQ WL = AL + CL - 1 = 4 CL - 1 = 2 DI n DI n+1 DI n+2 DI n+3 Transitioning Data Don’t Care Notes: 1. BL = 4. 2. CL = 3. 3. WL = AL + CL - 1 = 4. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 82 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Extended Mode Register 2 (EMR2) Extended Mode Register 2 (EMR2) The extended mode register 2 (EMR2) controls functions beyond those controlled by the mode register. Currently all bits in EMR2 are reserved, except for E7, which is used in commercial or high-temperature operations, as shown in Figure 40. The EMR2 is programmed via the LM command and will retain the stored information until it is programmed again or until the device loses power. Reprogramming the EMR will not alter the contents of the memory array, provided it is performed correctly. Bit E7 (A7) must be programmed as “1” to provide a faster refresh rate on IT and AT devices if TC exceeds 85°C. EMR2 must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time tMRD before initiating any subsequent operation. Violating either of these requirements could result in an unspecified operation. Figure 40: EMR2 Definition 1 2 BA2 BA1 BA0 An A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus 16 0 E15 E14 0 0 1 1 0 1 0 1 15 14 n MRS 0 12 11 00 10 9 8 7 6 0 0 SRT 0 0 E7 0 1 5432 0000 SRT Enable 1 0 0 0 Extended mode register (Ex) Mode Register Set Mode register (MR) Extended mode register (EMR) Extended mode register (EMR2) Extended mode register (EMR3) 1X refresh rate (0°C to 85°C) 2X refresh rate (>85°C) Notes: 1. E16 (BA2) is only applicable for densities ≥1Gb, reserved for future use, and must be programmed to “0.” 2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are reserved for future use and must be programmed to “0.” PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 83 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Extended Mode Register 3 (EMR3) Extended Mode Register 3 (EMR3) The extended mode register 3 (EMR3) controls functions beyond those controlled by the mode register. Currently all bits in EMR3 are reserved, as shown in Figure 41. The EMR3 is programmed via the LM command and will retain the stored information until it is programmed again or until the device loses power. Reprogramming the EMR will not alter the contents of the memory array, provided it is performed correctly. EMR3 must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time tMRD before initiating any subsequent operation. Violating either of these requirements could result in an unspecified operation. Figure 41: EMR3 Definition 1 2 BA2 BA1 BA0 An A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus 16 0 15 14 n MRS 0 12 11 0 0 10 0 9 0 8 0 7 0 6 0 5 0 4 0 3 0 2 0 1 0 0 0 Extended mode register (Ex) E15 E14 0 0 1 1 0 1 0 1 Mode Register Set Mode register (MR) Extended mode register (EMR) Extended mode register (EMR2) Extended mode register (EMR3) Notes: 1. E16 (BA2) is only applicable for densities ≥1Gb, is reserved for future use, and must be programmed to “0.” 2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are reserved for future use and must be programmed to “0.” PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 84 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. Initialization Figure 42: DDR2 Power-Up and Initialization DDR2 SDRAM must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. Figure 42 illustrates, and the notes outline, the sequence required for power-up and initialization. VDD VDDL VDDQ VTT1 VREF T0 tVTD1 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN CK# CK LVCMOS tCL tCK tCL Ta0 Tb0 Tc0 Td0 Te0 Tf0 Tg0 Th0 Ti0 Tj0 Tk0 Tl0 Tm0 CKE low level2 ODT SSTL_18 2 low level Command 15 DM NOP3 PRE LM5 LM6 LM7 LM8 PRE9 REF10 REF10 LM11 LM12 LM13 Valid14 85 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 16 Address A10 = 1 Code Code Code Code A10 = 1 Code Code Code Valid DQS DQ 15 High-Z High-Z High-Z 1Gb: x4, x8, x16 DDR2 SDRAM Initialization 15 Rtt T = 200µs (MIN)3 Power-up: VDD and stable clock (CK, CK#) T = 400ns (MIN)4 tRPA EMR(2) tMRD EMR(3) tMRD EMR tMRD tMRD tRPA tRFC See no te 10 tRFC tMRD tMRD tMRD MR without DLL RESET EMR with OCD default EMR with OCD exit 200 cycles of CK are required before a READ command can be issued MR with DLL RESET Indicates a Break in Time Scale Normal operation Don’t care 1Gb: x4, x8, x16 DDR2 SDRAM Notes: 1. Applying power; if CKE is maintained below 0.2 × VDDQ, outputs remain disabled. To guarantee RTT (ODT resistance) is off, VREF must be valid and a low level must be applied to the ODT ball (all other inputs may be undefined; I/Os and outputs must be less than VDDQ during voltage ramp time to avoid DDR2 SDRAM device latch-up). VTT is not applied directly to the device; however, tVTD should be ≥0 to avoid device latch-up. At least one of the following two sets of conditions (A or B) must be met to obtain a stable supply state (stable supply defined as VDD, VDDL, VDDQ, VREF, and VTT are between their minimum and maximum values as stated in Table 12 (page 41)): A. Single power source: The VDD voltage ramp from 300mV to VDD,min must take no longer than 200ms; during the VDD voltage ramp, |VDD - VDDQ| ≤ 0.3V. Once supply voltage ramping is complete (when VDDQ crosses VDD,min), Table 12 specifications apply. • VDD, VDDL, and VDDQ are driven from a single power converter output • VTT is limited to 0.95V MAX • VREF tracks VDDQ/2; VREF must be within ±0.3V with respect to VDDQ/2 during supply ramp time; does not need to be satisfied when ramping power down • VDDQ ≥ VREF at all times B. Multiple power sources: VDD ≥ VDDL ≥ VDDQ must be maintained during supply voltage ramping, for both AC and DC levels, until supply voltage ramping completes (VDDQ crosses VDD,min). Once supply voltage ramping is complete, Table 12 specifications apply. • Apply VDD and VDDL before or at the same time as VDDQ; VDD/VDDL voltage ramp time must be ≤ 200ms from when VDD ramps from 300mV to VDD,min • Apply VDDQ before or at the same time as VTT; the VDDQ voltage ramp time from when VDD,min is achieved to when VDDQ,min is achieved must be ≤ 500ms; while VDD is ramping, current can be supplied from VDD through the device to VDDQ • VREF must track VDDQ/2; VREF must be within ±0.3V with respect to VDDQ/2 during supply ramp time; VDDQ ≥ VREF must be met at all times; does not need to be satisfied when ramping power down • Apply VTT; the VTT voltage ramp time from when VDDQ,min is achieved to when VTT,min is achieved must be no greater than 500ms CKE requires LVCMOS input levels prior to state T0 to ensure DQs are High-Z during device power-up prior to VREF being stable. After state T0, CKE is required to have SSTL_18 input levels. Once CKE transitions to a high level, it must stay HIGH for the duration of the initialization sequence. For a minimum of 200µs after stable power and clock (CK, CK#), apply NOP or DESELECT commands, then take CKE HIGH. Wait a minimum of 400ns then issue a PRECHARGE ALL command. Issue a LOAD MODE command to the EMR(2). To issue an EMR(2) command, provide LOW to BA0, and provide HIGH to BA1; set register E7 to “0” or “1” to select appropriate self refresh rate; remaining EMR(2) bits must be “0” (see Extended Mode Register 2 (EMR2) (page 83) for all EMR(2) requirements). Issue a LOAD MODE command to the EMR(3). To issue an EMR(3) command, provide HIGH to BA0 and BA1; remaining EMR(3) bits must be “0.” Extended Mode Register 3 (EMR3) for all EMR(3) requirements. Issue a LOAD MODE command to the EMR to enable DLL. To issue a DLL ENABLE command, provide LOW to BA1 and A0; provide HIGH to BA0; bits E7, E8, and E9 can be set to “0” or “1;” Micron recommends setting them to “0;” remaining EMR bits must be “0.” Extended Mode Register (EMR) (page 79) for all EMR requirements. Issue a LOAD MODE command to the MR for DLL RESET. 200 cycles of clock input is required to lock the DLL. To issue a DLL RESET, provide HIGH to A8 and provide LOW to BA1 and BA0; CKE must be HIGH the entire time the DLL is resetting; remaining MR bits must be “0.” Mode Register (MR) (page 74) for all MR requirements. Issue PRECHARGE ALL command. 2. 3. 4. 5. 6. 7. 8. 9. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 86 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM 10. Issue two or more REFRESH commands. 11. Issue a LOAD MODE command to the MR with LOW to A8 to initialize device operation (that is, to program operating parameters without resetting the DLL). To access the MR, set BA0 and BA1 LOW; remaining MR bits must be set to desired settings. Mode Register (MR) (page 74) for all MR requirements. 12. Issue a LOAD MODE command to the EMR to enable OCD default by setting bits E7, E8, and E9 to “1,” and then setting all other desired parameters. To access the EMR, set BA0 LOW and BA1 HIGH (see Extended Mode Register (EMR) (page 79) for all EMR requirements. 13. Issue a LOAD MODE command to the EMR to enable OCD exit by setting bits E7, E8, and E9 to “0,” and then setting all other desired parameters. To access the extended mode registers, EMR, set BA0 LOW and BA1 HIGH for all EMR requirements. 14. The DDR2 SDRAM is now initialized and ready for normal operation 200 clock cycles after the DLL RESET at Tf0. 15. DM represents DM for the x4, x8 configurations and UDM, LDM for the x16 configuration; DQS represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, RDQS# for the appropriate configuration (x4, x8, x16); DQ represents DQ0–DQ3 for x4, DQ–DQ7 for x8 and DQ0–DQ15 for x16. 16. A10 = PRECHARGE ALL, CODE = desired values for mode registers (bank addresses are required to be decoded). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 87 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM ACTIVATE ACTIVATE Before any READ or WRITE commands can be issued to a bank within the DDR2 SDRAM, a row in that bank must be opened (activated), even when additive latency is used. This is accomplished via the ACTIVATE command, which selects both the bank and the row to be activated. After a row is opened with an ACTIVATE command, a READ or WRITE command may be issued to that row subject to the tRCD specification. tRCD (MIN) should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the ACTIVATE command on which a READ or WRITE command can be entered. The same procedure is used to convert other specification limits from time units to clock cycles. For example, a tRCD (MIN) specification of 20ns with a 266 MHz clock (tCK = 3.75ns) results in 5.3 clocks, rounded up to 6. This is shown in Figure 43, which covers any case where 5 < tRCD (MIN)/tCK ≤ 6. Figure 43 also shows the case for tRRD where 2 < tRRD (MIN)/tCK ≤ 3. Figure 43: Example: Meeting tRRD (MIN) and tRCD (MIN) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 CK# CK Command ACT NOP NOP ACT NOP NOP NOP NOP NOP RD/WR Address Row Row Row Col Bank address Bank x tRRD Bank y tRRD tRCD Bank z Bank y Don’t Care A subsequent ACTIVATE command to a different row in the same bank can only be issued after the previous active row has been closed (precharged). The minimum time interval between successive ACTIVATE commands to the same bank is defined by tRC. A subsequent ACTIVATE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive ACTIVATE commands to different banks is defined by tRRD. DDR2 devices with 8 banks (1Gb or larger) have an additional requirement: tFAW. This requires no more than four ACTIVATE commands may be issued in any given tFAW (MIN) period, as shown in Figure 44 (page 89). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 88 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM ACTIVATE Figure 44: Multibank Activate Restriction CK# CK Command Address Bank address ACT Row Bank a T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 READ Col Bank a ACT Row Bank b READ Col Bank b ACT Row Bank c READ Col Bank c ACT Row Bank d READ Col Bank d NOP NOP ACT Row Bank e tRRD (MIN) tFAW (MIN) Don’t Care Note: 1. DDR2-533 (-37E, x4 or x8), tCK = 3.75ns, BL = 4, AL = 3, CL = 4, tRRD (MIN) = 7.5ns, tFAW (MIN) = 37.5ns. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 89 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM READ READ READ bursts are initiated with a READ command. The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is automatically precharged at the completion of the burst. If auto precharge is disabled, the row will be left open after the completion of the burst. During READ bursts, the valid data-out element from the starting column address will be available READ latency (RL) clocks later. RL is defined as the sum of AL and CL: RL = AL + CL. The value for AL and CL are programmable via the MR and EMR commands, respectively. Each subsequent data-out element will be valid nominally at the next positive or negative clock edge (at the next crossing of CK and CK#). Figure 45 (page 91) shows examples of RL based on different AL and CL settings. DQS/DQS# is driven by the DDR2 SDRAM along with output data. The initial LOW state on DQS and the HIGH state on DQS# are known as the read preamble (tRPRE). The LOW state on DQS and the HIGH state on DQS# coincident with the last data-out element are known as the read postamble (tRPST). Upon completion of a burst, assuming no other commands have been initiated, the DQ will go High-Z. A detailed explanation of tDQSQ (valid data-out skew), tQH (data-out window hold), and the valid data window are depicted in Figure 54 (page 99) and Figure 55 (page 100). A detailed explanation of tDQSCK (DQS transition skew to CK) and tAC (data-out transition skew to CK) is shown in Figure 56 (page 101). Data from any READ burst may be concatenated with data from a subsequent READ command to provide a continuous flow of data. The first data element from the new burst follows the last element of a completed burst. The new READ command should be issued x cycles after the first READ command, where x equals BL/2 cycles (see Figure 46 (page 92)). Nonconsecutive read data is illustrated in Figure 47 (page 93). Full-speed random read accesses within a page (or pages) can be performed. DDR2 SDRAM supports the use of concurrent auto precharge timing (see Table 41 (page 96)). DDR2 SDRAM does not allow interrupting or truncating of any READ burst using BL = 4 operations. Once the BL = 4 READ command is registered, it must be allowed to complete the entire READ burst. However, a READ (with auto precharge disabled) using BL = 8 operation may be interrupted and truncated only by another READ burst as long as the interruption occurs on a 4-bit boundary due to the 4n prefetch architecture of DDR2 SDRAM. As shown in Figure 48 (page 94), READ burst BL = 8 operations may not be interrupted or truncated with any other command except another READ command. Data from any READ burst must be completed before a subsequent WRITE burst is allowed. An example of a READ burst followed by a WRITE burst is shown in Figure 49 (page 94). The tDQSS (NOM) case is shown (tDQSS [MIN] and tDQSS [MAX] are defined in Figure 57 (page 103)). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 90 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM READ Figure 45: READ Latency CK# CK Command Address READ Bank a, Col n RL = 3 (AL = 0, CL = 3) DQS, DQS# DQ DO n T0 T1 T2 T3 T4 T4n T5 T5n NOP NOP NOP NOP NOP T0 T1 T2 T3 T3n T4 T4n T5 CK# CK Command Address READ Bank a, Col n AL = 1 NOP NOP NOP NOP NOP CL = 3 RL = 4 (AL = 1 + CL = 3) DQS, DQS# DQ DO n T0 T1 T2 T3 T3n T4 T4n T5 CK# CK Command Address READ Bank a, Col n NOP NOP NOP NOP NOP RL = 4 (AL = 0, CL = 4) DQS, DQS# DQ DO n Transitioning Data Don’t Care Notes: 1. DO n = data-out from column n. 2. BL = 4. 3. Three subsequent elements of data-out appear in the programmed order following DO n. 4. Shown with nominal tAC, tDQSCK, and tDQSQ. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 91 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM READ Figure 46: Consecutive READ Bursts CK# CK Command Address READ Bank, Col n T0 T1 T2 T3 T3n T4 T4n T5 T5n T6 T6n NOP READ Bank, Col b NOP NOP NOP NOP tCCD RL = 3 DQS, DQS# DQ DO n DO b CK# CK Command Address T0 T1 T2 T2n T3 T3n T4 T4n T5 T5n T6 T6n READ Bank, Col n NOP READ Bank, Col b NOP NOP NOP NOP tCCD RL = 4 DQS, DQS# DQ DO n DO b Transitioning Data Don’t Care Notes: 1. DO n (or b) = data-out from column n (or column b). 2. BL = 4. 3. Three subsequent elements of data-out appear in the programmed order following DO n. 4. Three subsequent elements of data-out appear in the programmed order following DO b. 5. Shown with nominal tAC, tDQSCK, and tDQSQ. 6. Example applies only when READ commands are issued to same device. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 92 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM READ Figure 47: Nonconsecutive READ Bursts CK# CK Command Address T0 READ Bank, Col n T1 NOP T2 NOP T3 READ Bank, Col b T3n T4 NOP T4n T5 NOP T6 NOP T6n T7 NOP T7n T8 NOP CL = 3 DQS, DQS# DQ CK# CK Command Address T0 T1 T2 T3 DO n DO b T4 T4n T5 T5n T6 T7 T7n T8 READ Bank, Col n NOP NOP READ Bank, Col b NOP NOP NOP NOP NOP CL = 4 DQS, DQS# DQ DO n DO b Transitioning Data Don’t Care Notes: 1. DO n (or b) = data-out from column n (or column b). 2. BL = 4. 3. Three subsequent elements of data-out appear in the programmed order following DO n. 4. Three subsequent elements of data-out appear in the programmed order following DO b. 5. Shown with nominal tAC, tDQSCK, and tDQSQ. 6. Example applies when READ commands are issued to different devices or nonconsecutive READs. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 93 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM READ Figure 48: READ Interrupted by READ CK# CK Command Address A10 DQS, DQS# DQ CL = 3 (AL = 0) tCCD CL = 3 (AL = 0) Transitioning Data Don’t Care DO DO DO DO DO DO DO DO DO DO DO DO T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 READ1 Valid4 NOP2 READ3 Valid4 Valid5 NOP2 Valid Valid Valid Valid Valid Valid Notes: 1. BL = 8 required; auto precharge must be disabled (A10 = LOW). 2. NOP or COMMAND INHIBIT commands are valid. PRECHARGE command cannot be issued to banks used for READs at T0 and T2. 3. Interrupting READ command must be issued exactly 2 × tCK from previous READ. 4. READ command can be issued to any valid bank and row address (READ command at T0 and T2 can be either same bank or different bank). 5. Auto precharge can be either enabled (A10 = HIGH) or disabled (A10 = LOW) by the interrupting READ command. 6. Example shown uses AL = 0; CL = 3, BL = 8, shown with nominal tAC, tDQSCK, and tDQSQ. Figure 49: READ-to-WRITE CK# CK Command DQS, DQS# tRCD = 3 DQ AL = 2 RL = 5 Transitioning Data Don’t Care CL = 3 DO n T0 ACT n T1 READ n T2 NOP T3 NOP T4 NOP T5 WRITE T6 NOP T7 NOP T8 NOP T9 NOP T10 NOP T11 NOP WL = RL - 1 = 4 DO n+1 DO n+2 DO n+3 DI n DI n+1 DI n+2 DI n+3 Notes: 1. BL = 4; CL = 3; AL = 2. 2. Shown with nominal tAC, tDQSCK, and tDQSQ. READ with Precharge A READ burst may be followed by a PRECHARGE command to the same bank, provided auto precharge is not activated. The minimum READ-to-PRECHARGE command spacing to the same bank has two requirements that must be satisfied: AL + BL/2 clocks and tRTP. tRTP is the minimum time from the rising clock edge that initiates the last 4-bit prefetch of a READ command to the PRECHARGE command. For BL = 4, this is the time from the actual READ (AL after the READ command) to PRECHARGE command. For BL = 8, this is the time from AL + 2 × CK after the READ-to-PRECHARGE command. Following the PRECHARGE command, a subsequent command to the same bank canPDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 94 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM READ not be issued until tRP is met. However, part of the row precharge time is hidden during the access of the last data elements. Examples of READ-to-PRECHARGE for BL = 4 are shown in Figure 50 and in Figure 51 for BL = 8. The delay from READ-to-PRECHARGE period to the same bank is AL + BL/ 2 - 2CK + MAX (tRTP/tCK or 2 × CK) where MAX means the larger of the two. Figure 50: READ-to-PRECHARGE – BL = 4 T0 4-bit prefetch T1 T2 T3 T4 T5 T6 T7 CK# CK Command READ NOP NOP PRE NOP NOP ACT NOP AL + BL/2 - 2CK + MAX (tRTP/tCK or 2CK) Address A10 Bank a Bank a Valid AL = 1 CL = 3 ≥tRTP (MIN) DO ≥tRAS (MIN) ≥tRC (MIN) DO DO Bank a Valid DQS, DQS# DQ DO ≥tRP (MIN) Transitioning Data Don’t Care Notes: 1. RL = 4 (AL = 1, CL = 3); BL = 4. 2. tRTP ≥ 2 clocks. 3. Shown with nominal tAC, tDQSCK, and tDQSQ. Figure 51: READ-to-PRECHARGE – BL = 8 T0 READ First 4-bit prefetch T1 NOP T2 NOP Second 4-bit prefetch T3 NOP T4 NOP T5 PRE T6 NOP T7 NOP T8 ACT CK# CK Command AL + BL/2 - 2CK + MAX (tRTP/tCK or 2CK) Address A10 AL = 1 DQS, DQS# DQ DO ≥tRTP (MIN) ≥tRAS (MIN) ≥tRC (MIN) Transitioning Data Don’t Care DO DO DO DO DO DO DO CL = 3 Bank a Bank a Bank a Valid Valid ≥tRP (MIN) Notes: 1. RL = 4 (AL = 1, CL = 3); BL = 8. 2. tRTP ≥ 2 clocks. 3. Shown with nominal tAC, tDQSCK, and tDQSQ. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 95 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM READ READ with Auto Precharge If A10 is high when a READ command is issued, the READ with auto precharge function is engaged. The DDR2 SDRAM starts an auto precharge operation on the rising clock edge that is AL + (BL/2) cycles later than the read with auto precharge command provided tRAS (MIN) and tRTP are satisfied. If tRAS (MIN) is not satisfied at this rising clock edge, the start point of the auto precharge operation will be delayed until tRAS (MIN) is satisfied. If tRTP (MIN) is not satisfied at this rising clock edge, the start point of the auto precharge operation will be delayed until tRTP (MIN) is satisfied. When the internal precharge is pushed out by tRTP, tRP starts at the point where the internal precharge happens (not at the next rising clock edge after this event). When BL = 4, the minimum time from READ with auto precharge to the next ACTIVATE command is AL + (tRTP + tRP)/tCK. When BL = 8, the minimum time from READ with auto precharge to the next ACTIVATE command is AL + 2 clocks + (tRTP + tRP)/tCK. The term (tRTP + tRP)/tCK is always rounded up to the next integer. A general purpose equation can also be used: AL + BL/2 - 2CK + (tRTP + tRP)/tCK. In any event, the internal precharge does not start earlier than two clocks after the last 4-bit prefetch. READ with auto precharge command may be applied to one bank while another bank is operational. This is referred to as concurrent auto precharge operation, as noted in Table 41. Examples of READ with precharge and READ with auto precharge with applicable timing requirements are shown in Figure 52 (page 97) and Figure 53 (page 98), respectively. Table 41: READ Using Concurrent Auto Precharge From Command (Bank n) READ with auto precharge To Command (Bank m) READ or READ with auto precharge WRITE or WRITE with auto precharge PRECHARGE or ACTIVATE Minimum Delay (with Concurrent Auto Precharge) BL/2 (BL/2) + 2 1 Units tCK tCK tCK PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 96 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM READ Figure 52: Bank Read – Without Auto Precharge T0 T1 tCK T2 tCH tCL T3 T4 T5 T6 T7 T7n T8 T8n T9 CK# CK CKE Command NOP1 ACT NOP1 NOP1 READ2 NOP1 tRTP4 PRE3 NOP1 NOP1 ACT Address RA Col n All banks RA A10 RA 5 One bank RA Bank address Bank x tRCD tRAS3 tRC Bank x CL = 3 Bank x6 Bank x tRP DM Case 1: tAC (MIN) and tDQSCK (MIN) 7 DQS, DQS# DQ8 tLZ (MIN) tRPRE tDQSCK (MIN) tRPST 7 DO n tLZ (MIN) tAC (MIN) tDQSCK (MAX) tHZ (MIN) Case 2: tAC (MAX) and tDQSCK (MAX) 7 DQS, DQS# DQ8 tLZ (MAX) tRPRE tRPST 7 DO n tLZ (MIN) tAC (MAX) tHZ (MAX) Don’t Care Transitioning Data Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 and AL = 0 in the case shown. 3. The PRECHARGE command can only be applied at T6 if tRAS (MIN) is met. 4. READ-to-PRECHARGE = AL + BL/2 - 2CK + MAX (tRTP/tCK or 2CK). 5. Disable auto precharge. 6. “Don’t Care” if A10 is HIGH at T5. 7. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level, but to when the device begins to drive or no longer drives, respectively. 8. DO n = data-out from column n; subsequent elements are applied in the programmed order. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 97 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM READ Figure 53: Bank Read – with Auto Precharge T0 T1 tCK T2 tCH tCL T3 T4 T5 T6 T7 T7n T8 T8n CK# CK CKE Command1 NOP1 ACT NOP1 READ2,3 NOP1 NOP1 NOP1 NOP1 NOP1 ACT Address RA Col n 4 RA A10 RA RA Bank address Bank x Bank x AL = 1 tRCD tRAS tRC tRTP tRP CL = 3 Bank x DM Case 1: tAC (MIN) and tDQSCK (MIN) DQS, DQS# DQ6 tDQSCK (MIN) 5 tLZ (MIN) DO n tLZ (MIN) tAC (MIN) tDQSCK (MAX) tRPRE tRPST 5 tHZ (MIN) Case 2: tAC (MAX) and tDQSCK (MAX) DQS, DQS# tLZ (MAX) DQ6 4-bit prefetch 5 tRPRE tRPST 5 DO n t Internal LZ (MAX) precharge tAC (MAX) tHZ (MAX) Transitioning Data Don’t Care Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4, RL = 4 (AL = 1, CL = 3) in the case shown. 3. The DDR2 SDRAM internally delays auto precharge until both tRAS (MIN) and tRTP (MIN) have been satisfied. 4. Enable auto precharge. 5. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level, but to when the device begins to drive or no longer drives, respectively. 6. DO n = data-out from column n; subsequent elements are applied in the programmed order. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 98 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM READ Figure 54: x4, x8 Data Output Timing – tDQSQ, tQH, and Data Valid Window T1 T2 T2n T3 T3n T4 CK# CK tHP1 tHP1 tDQSQ2 tHP1 tHP1 tDQSQ2 tHP1 tDQSQ2 tHP1 tDQSQ2 DQS# DQS3 DQ (last data valid) DQ4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ (first data no longer valid) tQH5 tQH5 tQHS tQH5 tQHS tQH5 tQHS tQHS DQ (last data valid) DQ (first data no longer valid) All DQs and DQS collectively6 Earliest signal transition Latest signal transition T2 T2 T2n T2n T3 T3 T3n T3n T2 T2n T3 T3n Data valid window Data valid window Data valid window Data valid window Notes: 1. tHP is the lesser of tCL or tCH clock transitions collectively when a bank is active. 2. tDQSQ is derived at each DQS clock edge, is not cumulative over time, begins with DQS transitions, and ends with the last valid transition of DQ. 3. DQ transitioning after the DQS transition defines the tDQSQ window. DQS transitions at T2 and at T2n are “early DQS,” at T3 are “nominal DQS,” and at T3n are “late DQS.” 4. DQ0, DQ1, DQ2, DQ3 for x4 or DQ0–DQ7 for x8. 5. tQH is derived from tHP: tQH = tHP - tQHS. 6. The data valid window is derived for each DQS transition and is defined as tQH - tDQSQ. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 99 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM READ Figure 55: x16 Data Output Timing – tDQSQ, tQH, and Data Valid Window T1 T2 T2n T3 T3n T4 CK# CK tHP1 tHP1 tDQSQ2 tHP1 tHP1 tDQSQ2 tHP1 tDQSQ2 tHP1 tDQSQ2 LDSQ# LDQS3 DQ (last data valid)4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ (first data no longer valid)4 Lower Byte tQH5 DQ (last data valid)4 DQ (first data no longer valid)4 DQ0–DQ7 and LDQS collectively6 T2 T2 T2 tQH5 tQHS T2n T2n T2n tQH5 tQHS T3 T3 T3 tQH5 tQHS T3n T3n T3n tQHS Data valid window tDQSQ2 UDQS# UDQS3 DQ (last data valid)7 DQ7 DQ7 DQ7 DQ7 DQ7 DQ7 DQ (first data no longer valid)7 tQH5 DQ (last data valid)7 DQ (first data no longer valid)7 DQ8–DQ15 and UDQS collectively6 Data valid window tDQSQ2 Data valid window tDQSQ2 Data valid window tDQSQ2 Upper Byte tQH5 tQHS T2 T2 T2 T2n T2n T2n tQH5 tQHS T3 T3 T3 tQH5 tQHS T3n T3n T3n tQHS Data valid window Data valid window Data valid window Data valid window Notes: 1. tHP is the lesser of tCL or tCH clock transitions collectively when a bank is active. 2. tDQSQ is derived at each DQS clock edge, is not cumulative over time, begins with DQS transitions, and ends with the last valid transition of DQ. 3. DQ transitioning after the DQS transitions define the tDQSQ window. LDQS defines the lower byte, and UDQS defines the upper byte. 4. DQ0, DQ1, DQ2, DQ3, DQ4, DQ5, DQ6, or DQ7. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 100 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM WRITE 5. tQH is derived from tHP: tQH = tHP - tQHS. 6. The data valid window is derived for each DQS transition and is tQH - tDQSQ. 7. DQ8, DQ9, DQ10, D11, DQ12, DQ13, DQ14, or DQ15. Figure 56: Data Output Timing – tAC and tDQSCK T01 T1 T2 T3 T3n T4 T4n T5 T5n T6 T6n T7 CK# CK tLZ (MIN) DQS#/DQS or LDQS#/LDQS/UDQ#/UDQS3 DQ (last data valid) DQ (first data valid) All DQs collectively4 tRPRE tDQSCK2 (MIN) tDQSCK2 (MAX) tHZ (MAX) tRPST T3 T3 T3 tLZ (MIN) T3n T3n T3n T4 T4 T4 T4n T4n T4n T5 T5 T5 T5n T5n T5n T6 T6 T6 T6n T6n T6n tAC5 (MIN) tAC5 (MAX) tHZ (MAX) Notes: 1. READ command with CL = 3, AL = 0 issued at T0. 2. tDQSCK is the DQS output window relative to CK and is the long-term component of DQS skew. 3. DQ transitioning after DQS transitions define tDQSQ window. 4. All DQ must transition by tDQSQ after DQS transitions, regardless of tAC. 5. tAC is the DQ output window relative to CK and is the “long term” component of DQ skew. 6. tLZ (MIN) and tAC (MIN) are the first valid signal transitions. 7. tHZ (MAX) and tAC (MAX) are the latest valid signal transitions. 8. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level, but to when the device begins to drive or no longer drives, respectively. WRITE WRITE bursts are initiated with a WRITE command. DDR2 SDRAM uses WL equal to RL minus one clock cycle (WL = RL - 1CK) (see READ (page 73)). The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. Note: For the WRITE commands used in the following illustrations, auto precharge is disabled. During WRITE bursts, the first valid data-in element will be registered on the first rising edge of DQS following the WRITE command, and subsequent data elements will be registered on successive edges of DQS. The LOW state on DQS between the WRITE command and the first rising edge is known as the write preamble; the LOW state on DQS following the last data-in element is known as the write postamble. The time between the WRITE command and the first rising DQS edge is WL ±tDQSS. Subsequent DQS positive rising edges are timed, relative to the associated clock edge, as ±tDQSS. tDQSS is specified with a relatively wide range (25% of one clock cycle). All of PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 101 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM WRITE the WRITE diagrams show the nominal case, and where the two extreme cases (tDQSS [MIN] and tDQSS [MAX]) might not be intuitive, they have also been included. Figure 57 (page 103) shows the nominal case and the extremes of tDQSS for BL = 4. Upon completion of a burst, assuming no other commands have been initiated, the DQ will remain High-Z and any additional input data will be ignored. Data for any WRITE burst may be concatenated with a subsequent WRITE command to provide continuous flow of input data. The first data element from the new burst is applied after the last element of a completed burst. The new WRITE command should be issued x cycles after the first WRITE command, where x equals BL/2. Figure 58 (page 104) shows concatenated bursts of BL = 4 and how full-speed random write accesses within a page or pages can be performed. An example of nonconsecutive WRITEs is shown in Figure 59 (page 104). DDR2 SDRAM supports concurrent auto precharge options, as shown in Table 42. DDR2 SDRAM does not allow interrupting or truncating any WRITE burst using BL = 4 operation. Once the BL = 4 WRITE command is registered, it must be allowed to complete the entire WRITE burst cycle. However, a WRITE BL = 8 operation (with auto precharge disabled) might be interrupted and truncated only by another WRITE burst as long as the interruption occurs on a 4-bit boundary due to the 4n-prefetch architecture of DDR2 SDRAM. WRITE burst BL = 8 operations may not be interrupted or truncated with any command except another WRITE command, as shown in Figure 60 (page 105). Data for any WRITE burst may be followed by a subsequent READ command. To follow a WRITE, tWTR should be met, as shown in Figure 61 (page 106). The number of clock cycles required to meet tWTR is either 2 or tWTR/tCK, whichever is greater. Data for any WRITE burst may be followed by a subsequent PRECHARGE command. tWR must be met, as shown in Figure 62 (page 107). tWR starts at the end of the data burst, regardless of the data mask condition. Table 42: WRITE Using Concurrent Auto Precharge From Command (Bank n) WRITE with auto precharge To Command (Bank m) READ or READ with auto precharge WRITE or WRITE with auto precharge PRECHARGE or ACTIVATE Minimum Delay (with Concurrent Auto Precharge) (CL - 1) + (BL/2) + (BL/2) 1 tWTR Units tCK tCK tCK PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 102 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM WRITE Figure 57: Write Burst CK# CK Command Address tDQSS (NOM) WRITE Bank a, Col b NOP NOP NOP NOP T0 T1 T2 T2n T3 T3n T4 WL ± tDQSS 5 DQS, DQS# DQ DM tDQSS (MIN) DI b WL - tDQSS tDQSS5 DQS, DQS# DQ DM tDQSS (MAX) DI b WL + tDQSS tDQSS5 DQS, DQS# DQ DM Transitioning Data Don’t Care DI b Notes: 1. Subsequent rising DQS signals must align to the clock within tDQSS. 2. DI b = data-in for column b. 3. Three subsequent elements of data-in are applied in the programmed order following DI b. 4. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2. 5. A10 is LOW with the WRITE command (auto precharge is disabled). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 103 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM WRITE Figure 58: Consecutive WRITE-to-WRITE CK# CK Command WRITE NOP tCCD WL = 2 Address tDQSS (NOM) DQS, DQS# DQ DM Transitioning Data Don’t Care DI b Bank, Col b WL ± tDQSS Bank, Col n 1 1 1 WL = 2 WRITE NOP NOP NOP NOP T0 T1 T1n T2 T2n T3 T3n T4 T4n T5 T5n T6 DI n Notes: 1. Subsequent rising DQS signals must align to the clock within tDQSS. 2. DI b, etc. = data-in for column b, etc. 3. Three subsequent elements of data-in are applied in the programmed order following DI b. 4. Three subsequent elements of data-in are applied in the programmed order following DI n. 5. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2. 6. Each WRITE command may be to any bank. Figure 59: Nonconsecutive WRITE-to-WRITE CK# CK Command WRITE NOP WL = 2 Address tDQSS (NOM) DQS, DQS# DQ DM Transitioning Data Don’t Care DI b DI n Bank, Col b WL ± tDQSS Bank, Col n 1 1 1 NOP WRITE NOP WL = 2 NOP NOP T0 T1 T2 T2n T3 T3n T4 T4n T5 T5n T6 T6n Notes: 1. Subsequent rising DQS signals must align to the clock within tDQSS. 2. DI b (or n), etc. = data-in for column b (or column n). 3. Three subsequent elements of data-in are applied in the programmed order following DI b. 4. Three subsequent elements of data-in are applied in the programmed order following DI n. 5. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2. 6. Each WRITE command may be to any bank. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 104 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM WRITE Figure 60: WRITE Interrupted by WRITE T0 WRITE1 a CK# CK Command Address A10 DQS, DQS# DQ T1 NOP2 T2 WRITE3 b T3 NOP2 T4 NOP2 T5 NOP2 T6 NOP2 T7 Valid4 T8 Valid4 T9 Valid4 Valid5 Valid5 Valid6 7 DI a DI a+1 DI a+2 DI a+3 7 DI b DI b+1 7 DI b+2 DI b+3 7 DI b+4 DI b+5 7 DI b+6 DI b+7 WL = 3 2-clock requirement WL = 3 Transitioning Data Don’t Care Notes: 1. BL = 8 required and auto precharge must be disabled (A10 = LOW). 2. The NOP or COMMAND INHIBIT commands are valid. The PRECHARGE command cannot be issued to banks used for WRITEs at T0 and T2. 3. The interrupting WRITE command must be issued exactly 2 × tCK from previous WRITE. 4. The earliest WRITE-to-PRECHARGE timing for WRITE at T0 is WL + BL/2 + tWR where tWR starts with T7 and not T5 (because BL = 8 from MR and not the truncated length). 5. The WRITE command can be issued to any valid bank and row address (WRITE command at T0 and T2 can be either same bank or different bank). 6. Auto precharge can be either enabled (A10 = HIGH) or disabled (A10 = LOW) by the interrupting WRITE command. 7. Subsequent rising DQS signals must align to the clock within tDQSS. 8. Example shown uses AL = 0; CL = 4, BL = 8. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 105 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM WRITE Figure 61: WRITE-to-READ T0 T1 T2 T2n T3 T3n T4 T5 T6 T7 T8 T9 T9n CK# CK Command WRITE Bank a, Col b NOP NOP NOP NOP NOP tWTR1 READ Bank a, Col n NOP NOP NOP Address tDQSS (NOM) DQS, DQS# DQ DM tDQSS (MIN) DQS, DQS# DQ DM tDQSS (MAX) DQS, DQS# DQ DM WL ± tDQSS 2 CL = 3 DI b DI WL - tDQSS 2 CL = 3 DI b DI WL + tDQSS 2 CL = 3 DI b DI Transitioning Data Don’t Care Notes: 1. tWTR is required for any READ following a WRITE to the same device, but it is not required between module ranks. 2. Subsequent rising DQS signals must align to the clock within tDQSS. 3. DI b = data-in for column b; DO n = data-out from column n. 4. BL = 4, AL = 0, CL = 3; thus, WL = 2. 5. One subsequent element of data-in is applied in the programmed order following DI b. 6. tWTR is referenced from the first positive CK edge after the last data-in pair. 7. A10 is LOW with the WRITE command (auto precharge is disabled). 8. The number of clock cycles required to meet tWTR is either 2 or tWTR/tCK, whichever is greater. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 106 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM WRITE Figure 62: WRITE-to-PRECHARGE T0 T1 T2 T2n T3 T3n T4 T5 T6 T7 CK# CK Command WRITE NOP NOP NOP NOP NOP tWR NOP PRE tRP Bank, (a or all) Address tDQSS (NOM) DQS# DQS DQ DM tDQSS (MIN) DQS# DQS DQ DM tDQSS (MAX) DQS# DQS DQ DM Bank a, Col b WL + tDQSS 1 DI b WL - tDQSS 1 DI b WL + tDQSS 1 DI b Transitioning Data Don’t Care Notes: 1. Subsequent rising DQS signals must align to the clock within tDQSS. 2. DI b = data-in for column b. 3. Three subsequent elements of data-in are applied in the programmed order following DI b. 4. BL = 4, CL = 3, AL = 0; thus, WL = 2. 5. tWR is referenced from the first positive CK edge after the last data-in pair. 6. The PRECHARGE and WRITE commands are to the same bank. However, the PRECHARGE and WRITE commands may be to different banks, in which case tWR is not required and the PRECHARGE command could be applied earlier. 7. A10 is LOW with the WRITE command (auto precharge is disabled). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 107 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM WRITE Figure 63: Bank Write – Without Auto Precharge T0 T1 tCK T2 tCH tCL T3 T4 T5 T5n T6 T6n T7 T8 T9 CK# CK CKE Command NOP1 ACT NOP1 WRITE2 NOP1 NOP1 NOP1 NOP1 NOP1 PRE Address RA Col n All banks A10 RA 3 One bank Bank select Bank x tRCD Bank x WL = 2 tRAS WL ±tDQSS (NOM) 5 tWPRE tDQSL tDQSH tWPST tWR Bank x4 tRP DQS, DQS# DQ6 DM DI n Transitioning Data Don’t Care Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 and AL = 0 in the case shown. 3. Disable auto precharge. 4. “Don’t Care” if A10 is HIGH at T9. 5. Subsequent rising DQS signals must align to the clock within tDQSS. 6. DI n = data-in for column n; subsequent elements are applied in the programmed order. 7. tDSH is applicable during tDQSS (MIN) and is referenced from CK T5 or T6. 8. tDSS is applicable during tDQSS (MAX) and is referenced from CK T6 or T7. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 108 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM WRITE Figure 64: Bank Write – with Auto Precharge T0 T1 tCK T2 tCH tCL T3 T4 T5 T5n T6 T6n T7 T8 T9 CK# CK CKE Command NOP1 ACT NOP1 WRITE2 NOP1 NOP1 NOP1 NOP1 NOP1 NOP1 Address A10 RA Col n 3 RA Bank select Bank x tRCD Bank x WL = 2 tRAS WL ±tDQSS (NOM) 5 tDQSL tDQSH tWPST WR4 tRP DQS, DQS# tWPRE DQ6 DM DI n Transitioning Data Don’t Care Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 and AL = 0 in the case shown. 3. Enable auto precharge. 4. WR is programmed via MR9–MR11 and is calculated by dividing tWR (in ns) by tCK and rounding up to the next integer value. 5. Subsequent rising DQS signals must align to the clock within tDQSS. 6. DI n = data-in from column n; subsequent elements are applied in the programmed order. 7. tDSH is applicable during tDQSS (MIN) and is referenced from CK T5 or T6. 8. tDSS is applicable during tDQSS (MAX) and is referenced from CK T6 or T7. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 109 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM WRITE Figure 65: WRITE – DM Operation T0 T1 tCK T2 tCH tCL T3 T4 T5 T6 T6n T7 T7n T8 T9 T10 T11 CK# CK CKE Command Address NOP1 ACT RA NOP1 WRITE2 NOP1 AL = 1 Col n NOP1 WL = 2 NOP1 NOP1 NOP1 NOP1 NOP1 PRE A10 Bank select All banks RA Bank x 3 Bank x tRCD tRAS WL ±tDQSS (NOM) 6 tDQSL tDQSH tWPST One bank Bank x4 tWR5 tRPA DQS, DQS# tWPRE DQ7 DM Transitioning Data Don’t Care DI n Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4, AL = 1, and WL = 2 in the case shown. 3. Disable auto precharge. 4. “Don’t Care” if A10 is HIGH at T11. 5. tWR starts at the end of the data burst regardless of the data mask condition. 6. Subsequent rising DQS signals must align to the clock within tDQSS. 7. DI n = data-in for column n; subsequent elements are applied in the programmed order. 8. tDSH is applicable during tDQSS (MIN) and is referenced from CK T6 or T7. 9. tDSS is applicable during tDQSS (MAX) and is referenced from CK T7 or T8. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 110 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM PRECHARGE Figure 66: Data Input Timing T0 CK# CK WL - tDQSS (NOM) DQS DQS# t WPRE DQ DM DI t DSH 1 t DSS 2 3 t DQSL t DSH 1 t DSS 2 T1 T1n T2 T2n T3 T3n T4 t DQSH t WPST Transitioning Data Don’t Care Notes: 1. 2. 3. 4. 5. 6. (MIN) generally occurs during tDQSS (MIN). (MIN) generally occurs during tDQSS (MAX). Subsequent rising DQS signals must align to the clock within tDQSS. WRITE command issued at T0. For x16, LDQS controls the lower byte and UDQS controls the upper byte. WRITE command with WL = 2 (CL = 3, AL = 0) issued at T0. tDSS tDSH PRECHARGE Precharge can be initiated by either a manual PRECHARGE command or by an autoprecharge in conjunction with either a READ or WRITE command. Precharge will deactivate the open row in a particular bank or the open row in all banks. The PRECHARGE operation is shown in the previous READ and WRITE operation sections. During a manual PRECHARGE command, the A10 input determines whether one or all banks are to be precharged. In the case where only one bank is to be precharged, bank address inputs determine the bank to be precharged. When all banks are to be precharged, the bank address inputs are treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. When a single-bank PRECHARGE command is issued, tRP timing applies. When the PRECHARGE (ALL) command is issued, tRPA timing applies, regardless of the number of banks opened. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 111 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM REFRESH REFRESH The commercial temperature DDR2 SDRAM requires REFRESH cycles at an average interval of 7.8125µs (MAX) and all rows in all banks must be refreshed at least once every 64ms. The refresh period begins when the REFRESH command is registered and ends tRFC (MIN) later. The average interval must be reduced to 3.9µs (MAX) when T exC ceeds +85°C. Figure 67: Refresh Mode T0 CK# CK CKE Command NOP1 NOP1 NOP1 NOP1 REF2 NOP1 NOP1 T1 tCK T2 tCH tCL T3 T4 Ta0 Ta1 Tb0 Tb1 Tb2 PRE REF ACT Address All banks A10 One bank Bank Bank(s)3 RA RA BA DQS, DQS#4 DQ4 DM4 tRP tRFC (MIN) tRFC2 Indicates a break in time scale Don’t Care Notes: 1. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. CKE must be active during clock positive transitions. 2. The second REFRESH is not required and is only shown as an example of two back-toback REFRESH commands. 3. “Don’t Care” if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active (must precharge all active banks). 4. DM, DQ, and DQS signals are all “Don’t Care”/High-Z for operations shown. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 112 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM SELF REFRESH SELF REFRESH The SELF REFRESH command is initiated when CKE is LOW. The differential clock should remain stable and meet tCKE specifications at least 1 × tCK after entering self refresh mode. The procedure for exiting self refresh requires a sequence of commands. First, the differential clock must be stable and meet tCK specifications at least 1 × tCK prior to CKE going back to HIGH. Once CKE is HIGH (tCKE [MIN] has been satisfied with three clock registrations), the DDR2 SDRAM must have NOP or DESELECT commands issued for tXSNR. A simple algorithm for meeting both refresh and DLL requirements is used to apply NOP or DESELECT commands for 200 clock cycles before applying any other command. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 113 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM SELF REFRESH Figure 68: Self Refresh CK# CK1 T0 T1 T2 Ta0 Ta1 Ta2 Tb0 Tc0 Td0 tCH CKE1 tCL tCK1 tCK1 tISXR2 tCKE3 t IH Command NOP REF NOP4 NOP4 Valid5 Valid5 t IH ODT6 tAOFD/tAOFPD6 Address DQS#, DQS DQ DM tRP8 Enter self refresh mode (synchronous) tCKE (MIN)9 Exit self refresh mode (asynchronous) tXSNR2, 5, 10 tXSRD2, 7 Indicates a break in time scale Valid Valid7 Don’t Care Notes: 1. Clock must be stable and meeting tCK specifications at least 1 × tCK after entering self refresh mode and at least 1 × tCK prior to exiting self refresh mode. 2. Self refresh exit is asynchronous; however, tXSNR and tXSRD timing starts at the first rising clock edge where CKE HIGH satisfies tISXR. 3. CKE must stay HIGH until tXSRD is met; however, if self refresh is being re-entered, CKE may go back LOW after tXSNR is satisfied. 4. NOP or DESELECT commands are required prior to exiting self refresh until state Tc0, which allows any nonREAD command. 5. tXSNR is required before any nonREAD command can be applied. 6. ODT must be disabled and RTT off (tAOFD and tAOFPD have been satisfied) prior to entering self refresh at state T1. 7. tXSRD (200 cycles of CK) is required before a READ command can be applied at state Td0. 8. Device must be in the all banks idle state prior to entering self refresh mode. 9. After self refresh has been entered, tCKE (MIN) must be satisfied prior to exiting self refresh. 10. Upon exiting SELF REFRESH, ODT must remain LOW until tXSRD is satisfied. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 114 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode Power-Down Mode DDR2 SDRAM supports multiple power-down modes that allow significant power savings over normal operating modes. CKE is used to enter and exit different power-down modes. Power-down entry and exit timings are shown in Figure 69 (page 116). Detailed power-down entry conditions are shown in Figure 70 (page 118)–Figure 77 (page 121). Table 43 (page 117) is the CKE Truth Table. DDR2 SDRAM requires CKE to be registered HIGH (active) at all times that an access is in progress—from the issuing of a READ or WRITE command until completion of the burst. Thus, a clock suspend is not supported. For READs, a burst completion is defined when the read postamble is satisfied; for WRITEs, a burst completion is defined when the write postamble and tWR (WRITE-to-PRECHARGE command) or tWTR (WRITE-toREAD command) are satisfied, as shown in Figure 72 (page 119) and Figure 73 (page 119) on Figure 73 (page 119). The number of clock cycles required to meet tWTR is either two or tWTR/tCK, whichever is greater. Power-down mode (see Figure 69 (page 116)) is entered when CKE is registered low coincident with an NOP or DESELECT command. CKE is not allowed to go LOW during a mode register or extended mode register command time, or while a READ or WRITE operation is in progress. If power-down occurs when all banks are idle, this mode is referred to as precharge power-down. If power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers, excluding CK, CK#, ODT, and CKE. For maximum power savings, the DLL is frozen during precharge power-down. Exiting active powerdown requires the device to be at the same voltage and frequency as when it entered power-down. Exiting precharge power-down requires the device to be at the same voltage as when it entered power-down; however, the clock frequency is allowed to change (see Precharge Power-Down Clock Frequency Change (page 122)). The maximum duration for either active or precharge power-down is limited by the refresh requirements of the device tRFC (MAX). The minimum duration for power-down entry and exit is limited by the tCKE (MIN) parameter. The following must be maintained while in power-down mode: CKE LOW, a stable clock signal, and stable power supply signals at the inputs of the DDR2 SDRAM. All other input signals are “Don’t Care” except ODT. Detailed ODT timing diagrams for different power-down modes are shown in Figure 82 (page 127)–Figure 87 (page 131). The power-down state is synchronously exited when CKE is registered HIGH (in conjunction with a NOP or DESELECT command), as shown in Figure 69 (page 116). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 115 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode Figure 69: Power-Down T1 CK# CK tCK Valid1 NOP tCKE (MIN)2 CKE tIH tCKE (MIN)2 tIS Address Valid tXP3, tXARD4 tXARDS5 DQS, DQS# Valid Valid tIH tCH tCL NOP NOP Valid Valid T2 T3 T4 T5 T6 T7 T8 Command DQ DM Enter power-down mode6 Exit power-down mode Don’t Care Notes: 1. If this command is a PRECHARGE (or if the device is already in the idle state), then the power-down mode shown is precharge power-down. If this command is an ACTIVATE (or if at least one row is already active), then the power-down mode shown is active powerdown. 2. tCKE (MIN) of three clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to achieve the three clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + 2 × tCK + tIH. CKE must not transition during its tIS and tIH window. 3. tXP timing is used for exit precharge power-down and active power-down to any nonREAD command. 4. tXARD timing is used for exit active power-down to READ command if fast exit is selected via MR (bit 12 = 0). 5. tXARDS timing is used for exit active power-down to READ command if slow exit is selected via MR (bit 12 = 1). 6. No column accesses are allowed to be in progress at the time power-down is entered. If the DLL was not in a locked state when CKE went LOW, the DLL must be reset after exiting power-down mode for proper READ operation. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 116 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode Table 43: Truth Table – CKE Notes 1–4 apply to the entire table CKE Current State Power-down Self refresh Bank(s) active All banks idle Previous Cycle (n - 1) L L L L H H H H Notes: Current Cycle (n) L H L H L L L H Command (n) CS#, RAS#, CAS#, WE# X DESELECT or NOP X DESELECT or NOP DESELECT or NOP Refresh Action (n) Maintain power-down Power-down exit Maintain self refresh Self refresh exit Precharge power-down entry Self refresh entry Notes 5, 6 7, 8 6 7, 9, 10 7, 8, 11, 12 7, 8, 11 10, 12, 13 14 DESELECT or NOP Active power-down entry Shown in Table 36 (page 68) 1. CKE (n) is the logic state of CKE at clock edge n; CKE (n - 1) was the state of CKE at the previous clock edge. 2. Current state is the state of the DDR2 SDRAM immediately prior to clock edge n. 3. Command (n) is the command registered at clock edge n, and action (n) is a result of command (n). 4. The state of ODT does not affect the states described in this table. The ODT function is not available during self refresh (see ODT Timing (page 125) for more details and specific restrictions). 5. Power-down modes do not perform any REFRESH operations. The duration of powerdown mode is therefore limited by the refresh requirements. 6. “X” means “Don’t Care” (including floating around VREF) in self refresh and powerdown. However, ODT must be driven high or low in power-down if the ODT function is enabled via EMR. 7. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document. 8. Valid commands for power-down entry and exit are NOP and DESELECT only. 9. On self refresh exit, DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period. READ commands may be issued only after tXSRD (200 clocks) is satisfied. 10. Valid commands for self refresh exit are NOP and DESELECT only. 11. Power-down and self refresh can not be entered while READ or WRITE operations, LOAD MODE operations, or PRECHARGE operations are in progress. See SELF REFRESH (page 113) and SELF REFRESH (page 74) for a list of detailed restrictions. 12. Minimum CKE high time is tCKE = 3 × tCK. Minimum CKE LOW time is tCKE = 3 × tCK. This requires a minimum of 3 clock cycles of registration. 13. Self refresh mode can only be entered from the all banks idle state. 14. Must be a legal command, as defined in Table 36 (page 68). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 117 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode Figure 70: READ-to-Power-Down or Self Refresh Entry CK# CK Command READ NOP NOP NOP Valid Valid NOP1 tCKE (MIN) CKE Address A10 DQS, DQS# DQ DO DO DO DO Power-down2 or self refresh entry Transitioning Data Don’t Care Valid T0 T1 T2 T3 T4 T5 T6 T7 RL = 3 Notes: 1. In the example shown, READ burst completes at T5; earliest power-down or self refresh entry is at T6. 2. Power-down or self refresh entry may occur after the READ burst completes. Figure 71: READ with Auto Precharge-to-Power-Down or Self Refresh Entry T0 T1 T2 T3 T4 T5 T6 T7 CK# CK Command READ NOP NOP NOP Valid Valid NOP1 tCKE (MIN) CKE Address A10 DQS, DQS# DQ Valid RL = 3 DO DO DO DO Power-down or self refresh2 entry Transitioning Data Don’t Care Notes: 1. In the example shown, READ burst completes at T5; earliest power-down or self refresh entry is at T6. 2. Power-down or self refresh entry may occur after the READ burst completes. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 118 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode Figure 72: WRITE-to-Power-Down or Self Refresh Entry T0 T1 T2 T3 T4 T5 T6 T7 T8 CK# CK Command WRITE NOP NOP NOP Valid Valid Valid NOP1 tCKE (MIN) CKE Address A10 DQS, DQS# DQ WL = 3 DO DO DO DO tWTR Power-down or self refresh entry1 Transitioning Data Don’t Care Valid Note: 1. Power-down or self refresh entry may occur after the WRITE burst completes. Figure 73: WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry T0 T1 T2 T3 T4 T5 Ta0 Ta1 Ta2 CK# CK Command WRITE NOP NOP NOP Valid Valid Valid1 NOP tCKE (MIN) CKE Address A10 DQS, DQS# DQ WL = 3 DO DO DO DO WR2 Power-down or self refresh entry Indicates a break in time scale Transitioning Data Don’t Care Valid Notes: 1. Internal PRECHARGE occurs at Ta0 when WR has completed; power-down entry may occur 1 x tCK later at Ta1, prior to tRP being satisfied. 2. WR is programmed through MR9–MR11 and represents (tWR [MIN] ns/tCK) rounded up to next integer tCK. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 119 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode Figure 74: REFRESH Command-to-Power-Down Entry CK# CK Command Valid REFRESH NOP tCKE (MIN) CKE 1 x tCK Power-down1 entry Don’t Care T0 T1 T2 T3 Note: 1. The earliest precharge power-down entry may occur is at T2, which is 1 × tCK after the REFRESH command. Precharge power-down entry occurs prior to tRFC (MIN) being satisfied. Figure 75: ACTIVATE Command-to-Power-Down Entry CK# CK Command Valid ACT NOP T0 T1 T2 T3 Address VALID tCKE (MIN) CKE 1 tCK Power-down1 entry Don’t Care Note: 1. The earliest active power-down entry may occur is at T2, which is 1 × tCK after the ACTIVATE command. Active power-down entry occurs prior to tRCD (MIN) being satisfied. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 120 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode Figure 76: PRECHARGE Command-to-Power-Down Entry CK# CK Command Valid PRE NOP T0 T1 T2 T3 Address A10 Valid All banks vs Single bank tCKE (MIN) CKE 1 x tCK Power-down1 entry Don’t Care Note: 1. The earliest precharge power-down entry may occur is at T2, which is 1 × tCK after the PRECHARGE command. Precharge power-down entry occurs prior to tRP (MIN) being satisfied. Figure 77: LOAD MODE Command-to-Power-Down Entry CK# CK Command Valid LM Valid1 tCKE (MIN) CKE tRP2 tMRD NOP NOP T0 T1 T2 T3 T4 Address Power-down3 entry Don’t Care Notes: 1. Valid address for LM command includes MR, EMR, EMR(2), and EMR(3) registers. 2. All banks must be in the precharged state and tRP met prior to issuing LM command. 3. The earliest precharge power-down entry is at T3, which is after tMRD is satisfied. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 121 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Precharge Power-Down Clock Frequency Change Precharge Power-Down Clock Frequency Change When the DDR2 SDRAM is in precharge power-down mode, ODT must be turned off and CKE must be at a logic LOW level. A minimum of two differential clock cycles must pass after CKE goes LOW before clock frequency may change. The device input clock frequency is allowed to change only within minimum and maximum operating frequencies specified for the particular speed grade. During input clock frequency change, ODT and CKE must be held at stable LOW levels. When the input clock frequency is changed, new stable clocks must be provided to the device before precharge power-down may be exited, and DLL must be reset via MR after precharge power-down exit. Depending on the new clock frequency, additional LM commands might be required to adjust the CL, WR, AL, and so forth. Depending on the new clock frequency, an additional LM command might be required to appropriately set the WR MR9, MR10, MR11. During the DLL relock period of 200 cycles, ODT must remain off. After the DLL lock time, the DRAM is ready to operate with a new clock frequency. Figure 78: Input Clock Frequency Change During Precharge Power-Down Mode Previous clock frequency CK# CK T0 tCH tCK 2 x tCK (MIN)1 tCKE (MIN)3 CKE Command Valid4 NOP NOP tCL T1 T2 T3 Ta0 tCH tCK 1 x tCK (MIN)2 tCL Ta1 New clock frequency Ta2 Ta3 Ta4 Tb0 tCKE (MIN)3 NOP LM NOP Valid Address ODT DQS, DQS# DQ DM Valid tXP DLL RESET Valid High-Z High-Z Enter precharge power-down mode Frequency change Exit precharge power-down mode 200 x tCK Indicates a break in time scale Don’t Care Notes: 1. A minimum of 2 × tCK is required after entering precharge power-down prior to changing clock frequencies. 2. When the new clock frequency has changed and is stable, a minimum of 1 × tCK is required prior to exiting precharge power-down. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 122 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Reset 3. Minimum CKE high time is tCKE = 3 × tCK. Minimum CKE LOW time is tCKE = 3 × tCK. This requires a minimum of three clock cycles of registration. 4. If this command is a PRECHARGE (or if the device is already in the idle state), then the power-down mode shown is precharge power-down, which is required prior to the clock frequency change. Reset CKE Low Anytime DDR2 SDRAM applications may go into a reset state anytime during normal operation. If an application enters a reset condition, CKE is used to ensure the DDR2 SDRAM device resumes normal operation after reinitializing. All data will be lost during a reset condition; however, the DDR2 SDRAM device will continue to operate properly if the following conditions outlined in this section are satisfied. The reset condition defined here assumes all supply voltages (VDD, VDDQ, VDDL, and VREF) are stable and meet all DC specifications prior to, during, and after the RESET operation. All other input balls of the DDR2 SDRAM device are a “Don’t Care” during RESET with the exception of CKE. If CKE asynchronously drops LOW during any valid operation (including a READ or WRITE burst), the memory controller must satisfy the timing parameter tDELAY before turning off the clocks. Stable clocks must exist at the CK, CK# inputs of the DRAM before CKE is raised HIGH, at which time the normal initialization sequence must occur (see Initialization). The DDR2 SDRAM device is now ready for normal operation after the initialization sequence. Figure 79 (page 124) shows the proper sequence for a RESET operation. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 123 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM Reset Figure 79: RESET Function T0 CK# CK tDELAY CKE 1 tCL T1 T2 T3 T4 T5 Ta0 Tb0 tCK tCL tCKE (MIN) ODT Command READ NOP2 READ NOP2 NOP2 NOP2 PRE DM3 Address Col n Col n All banks A10 Bank address DQS3 DQ3 RTT Bank a High-Z High-Z Bank b High-Z DO DO DO High-Z High-Z 4 System RESET T = 400ns (MIN) Start of normal5 initialization sequence tRPA Indicates a break in time scale Unknown RTT On Transitioning Data Don’t Care Notes: 1. VDD, VDDL, VDDQ, VTT, and VREF must be valid at all times. 2. Either NOP or DESELECT command may be applied. 3. DM represents DM for x4/x8 configuration and UDM, LDM for x16 configuration. DQS represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, and RDQS# for the appropriate configuration (x4, x8, x16). 4. In certain cases where a READ cycle is interrupted, CKE going HIGH may result in the completion of the burst. 5. Initialization timing is shown in Figure 42 (page 85). PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 124 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM ODT Timing ODT Timing Once a 12ns delay (tMOD) has been satisfied, and after the ODT function has been enabled via the EMR LOAD MODE command, ODT can be accessed under two timing categories. ODT will operate either in synchronous mode or asynchronous mode, depending on the state of CKE. ODT can switch anytime except during self refresh mode and a few clocks after being enabled via EMR, as shown in Figure 80 (page 126). There are two timing categories for ODT—turn-on and turn-off. During active mode (CKE HIGH) and fast-exit power-down mode (any row of any bank open, CKE LOW, MR[12 = 0]), tAOND, tAON, tAOFD, and tAOF timing parameters are applied, as shown in Figure 82 (page 127). During slow-exit power-down mode (any row of any bank open, CKE LOW, MR[12] = 1) and precharge power-down mode (all banks/rows precharged and idle, CKE LOW), tAONPD and tAOFPD timing parameters are applied, as shown in Figure 83 (page 128). ODT turn-off timing, prior to entering any power-down mode, is determined by the parameter tANPD (MIN), as shown in Figure 84 (page 128). At state T2, the ODT HIGH signal satisfies tANPD (MIN) prior to entering power-down mode at T5. When tANPD (MIN) is satisfied, tAOFD and tAOF timing parameters apply. Figure 84 (page 128) also shows the example where tANPD (MIN) is not satisfied because ODT HIGH does not occur until state T3. When tANPD (MIN) is not satisfied, tAOFPD timing parameters apply. ODT turn-on timing prior to entering any power-down mode is determined by the parameter tANPD, as shown in Figure 85 (page 129). At state T2, the ODT HIGH signal satisfies tANPD (MIN) prior to entering power-down mode at T5. When tANPD (MIN) is satisfied, tAOND and tAON timing parameters apply. Figure 85 (page 129) also shows the example where tANPD (MIN) is not satisfied because ODT HIGH does not occur until state T3. When tANPD (MIN) is not satisfied, tAONPD timing parameters apply. ODT turn-off timing after exiting any power-down mode is determined by the parameter tAXPD (MIN), as shown in Figure 86 (page 130). At state Ta1, the ODT LOW signal satisfies tAXPD (MIN) after exiting power-down mode at state T1. When tAXPD (MIN) is satisfied, tAOFD and tAOF timing parameters apply. Figure 86 (page 130) also shows the example where tAXPD (MIN) is not satisfied because ODT LOW occurs at state Ta0. When tAXPD (MIN) is not satisfied, tAOFPD timing parameters apply. ODT turn-on timing after exiting either slow-exit power-down mode or precharge powerdown mode is determined by the parameter tAXPD (MIN), as shown in Figure 87 (page 131). At state Ta1, the ODT HIGH signal satisfies tAXPD (MIN) after exiting powerdown mode at state T1. When tAXPD (MIN) is satisfied, tAOND and tAON timing parameters apply. Figure 87 (page 131) also shows the example where tAXPD (MIN) is not satisfied because ODT HIGH occurs at state Ta0. When tAXPD (MIN) is not satisfied, tAONPD timing parameters apply. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 125 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM ODT Timing Figure 80: ODT Timing for Entering and Exiting Power-Down Mode Synchronous Synchronous or Asynchronous tANPD (3 tCKs) First CKE latched LOW tAXPD (8 tCKs) First CKE latched HIGH Synchronous CKE Any mode except self refresh mode Active power-down fast (synchronous) Active power-down slow (asynchronous) Precharge power-down (asynchronous) Any mode except self refresh mode Applicable modes tAOND/tAOFD tAOND/tAOFD (synchronous) (asynchronous) tAOND/tAOFD tAONPD/tAOFPD Applicable timing parameters PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 126 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM ODT Timing MRS Command to ODT Update Delay During normal operation, the value of the effective termination resistance can be changed with an EMRS set command. tMOD (MAX) updates the RTT setting. Figure 81: Timing for MRS Command to ODT Update Delay T0 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Command EMRS1 NOP NOP NOP NOP NOP CK# CK ODT2 tAOFD 0ns Internal RTT setting Old setting Undefined tMOD 2 tIS New setting Indicates a break in time scale Notes: 1. The LM command is directed to the mode register, which updates the information in EMR (A6, A2), that is, RTT (nominal). 2. To prevent any impedance glitch on the channel, the following conditions must be met: tAOFD must be met before issuing the LM command; ODT must remain LOW for the entire duration of the tMOD window until tMOD is met. Figure 82: ODT Timing for Active or Fast-Exit Power-Down Mode CK# CK T0 T1 T2 T3 T4 T5 T6 tCK tCH tCL Command Valid Valid Valid Valid Valid Valid Valid Address Valid Valid Valid Valid Valid Valid Valid CKE tAOND ODT tAOFD RTT tAON (MIN) tAON (MAX) tAOF (MAX) tAOF (MIN) RTT Unknown RTT On Don’t Care PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 127 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM ODT Timing Figure 83: ODT Timing for Slow-Exit or Precharge Power-Down Modes CK# CK T0 tCK T1 tCH tCL T2 T3 T4 T5 T6 T7 Command Valid Valid Valid Valid Valid Valid Valid Valid Address Valid Valid Valid Valid Valid Valid Valid Valid CKE ODT tAONPD (MAX) tAONPD (MIN) RTT tAOFPD (MIN) tAOFPD (MAX) Transitioning RTT RTT Unknown RTT On Don’t Care Figure 84: ODT Turn-Off Timings When Entering Power-Down Mode CK# CK Command NOP NOP NOP NOP NOP NOP NOP T0 T1 T2 T3 T4 T5 T6 tANPD (MIN) CKE tAOFD ODT tAOF (MAX) RTT tAOF (MIN) tAOFPD (MAX) ODT RTT tAOFPD (MIN) Transitioning RTT RTT Unknown RTT ON Don’t Care PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 128 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM ODT Timing Figure 85: ODT Turn-On Timing When Entering Power-Down Mode CK# CK Command NOP NOP NOP NOP NOP NOP NOP T0 T1 T2 T3 T4 T5 T6 tANPD (MIN) CKE ODT tAOND tAON (MAX) RTT tAON (MIN) ODT tAONPD (MAX) RTT tAONPD (MIN) Transitioning RTT RTT Unknown RTT On Don’t Care PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 129 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM ODT Timing Figure 86: ODT Turn-Off Timing When Exiting Power-Down Mode CK# CK Command NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T0 T1 T2 T3 T4 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 tAXPD (MIN) CKE tCKE (MIN) tAOFD ODT tAOF (MAX) RTT tAOF (MIN) ODT RTT tAOFPD (MAX) tAOFPD (MIN) Indicates a break in time scale RTT Unknown RTT On Transitioning RTT Don’t Care PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 130 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. 1Gb: x4, x8, x16 DDR2 SDRAM ODT Timing Figure 87: ODT Turn-On Timing When Exiting Power-Down Mode CK# CK Command NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T0 T1 T2 T3 T4 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 tAXPD (MIN) CKE tCKE (MIN) ODT tAOND tAON (MAX) RTT tAON (MIN) ODT tAONPD (MAX) RTT tAONPD (MIN) Indicates a break in time scale RTT Unknown RTT On Transitioning RTT Don’t Care 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. T 02/10 EN 131 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved.