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MT47R512M4EB-25E:C

MT47R512M4EB-25E:C

  • 厂商:

    MICRON(镁光)

  • 封装:

    TFBGA60

  • 描述:

    IC DDR2 SDRAM 2GBIT 2.5NS 60FBGA

  • 数据手册
  • 价格&库存
MT47R512M4EB-25E:C 数据手册
2Gb: x4, x8, x16 1.55V DDR2 SDRAM Features DDR2 SDRAM MT47R512M4 – 64 Meg x 4 x 8 banks MT47R256M8 – 32 Meg x 8 x 8 banks MT47R128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Configuration – 512 Meg x 4 (64 Meg x 4 x 8 banks) – 256 Meg x 8 (32 Meg x 8 x 8 banks) – 128 Meg x 16 (16 Meg x 16 x 8 banks) • FBGA package (Pb-free) – x16 – 84-ball FBGA (9mm x 12.5mm) Rev. C • FBGA package (Pb-free) – x4, x8 – 60-ball FBGA (9mm x 11.5mm) Rev. C • FBGA package (Lead solder) – x16 – 84-ball FBGA (9mm x 12.5mm) Rev. C • Timing – cycle time – 2.5ns @ CL = 5 (DDR2-800) – 2.5ns @ CL = 6 (DDR2-800) – 3.0ns @ CL = 4 (DDR2-667) – 3.0ns @ CL = 5 (DDR2-667) • Self refresh – Standard • Operating temperature – Commercial (0°C ≤ TC ≤ 85°C) – Industrial (–40°C ≤ TC ≤ 95°C; –40°C ≤ TA ≤ 85°C) Revision • VDD/VDDQ = +1.55V, 1.5V-1.9V (-0.05V,+0.35V) Backward compatible with 1.8V DDR2 JEDEC-standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option 4n-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency - 1 tCK Programmable burst lengths: 4 or 8 Adjustable data-output drive strength 64ms, 8192-cycle refresh On-die termination (ODT) Industrial (IT) temperature option RoHS-compliant Supports JEDEC clock jitter specification Very low power consumption Note: Marking 512M4 256M8 128M16 RT EB PK -25E -25 -3E -3 None None IT :C 1. Not all options listed can be combined to define an offered product. Use the Part Catalog Search on www.micron.com for product offerings and availability. Table 1: Key Timing Parameters Data Rate (MHz) tRC Speed Grade CL = 3 CL = 4 CL = 5 CL = 6 CL = 7 -25E n/a 533 800 800 n/a 55 -25 n/a 533 667 800 n/a 55 -3E 400 667 667 n/a n/a 54 -3 400 533 667 n/a n/a 55 PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1 (ns) Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Features Table 2: Addressing Parameter Configuration 512 Meg x 4 256 Meg x 8 128 Meg x 16 64 Meg x 4 x 8 banks 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row address A[14:0] (32K) A[14:0] (32K) A[13:0] (16K) Bank address BA[2:0] (8) BA[2:0] (8) BA[2:0] (8) A[11, 9:0] (2K) A[9:0] (1K) A[9:0] (1K) Column address Part Numbers Figure 1: 2Gb 1.55V DDR2 Part Numbers Example Part Number: MT47R256M8EB-25 :C Configuration Package : Speed Revision { MT47R :C Configuration 512 Meg x 4 Revision 512M4 256 Meg x 8 256M8 128 Meg x 16 128M16 IT Industrial Temperature Power Package Standard 84-Ball 9.0mm x 12.5mm FBGA RT 60-Ball 9.0mm x 11.5mm FBGA EB 84-Ball 9.0mm x 12.5mm FBGA (lead solder) PK -25E -25 -3E -3 Note: Blank Speed Grade tCK = 2.5ns, CL = 5 tCK = 2.5ns, CL = 6 tCK = 3ns, CL = 4 tCK = 3ns, CL = 5 1. Not all speeds and configurations are available. FBGA Part Number System Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Features Contents State Diagram .................................................................................................................................................. 8 Functional Description ..................................................................................................................................... 9 Industrial Temperature ................................................................................................................................ 9 Automotive Temperature ........................................................................................................................... 10 General Notes ............................................................................................................................................ 10 Functional Block Diagrams ............................................................................................................................. 11 Ball Assignments and Descriptions ................................................................................................................. 14 Packaging ...................................................................................................................................................... 18 Package Dimensions .................................................................................................................................. 18 FBGA Package Capacitance ......................................................................................................................... 20 Electrical Specifications – Absolute Ratings ..................................................................................................... 21 Temperature and Thermal Impedance ........................................................................................................ 21 Electrical Specifications – IDD Parameters ........................................................................................................ 24 IDD Specifications and Conditions ............................................................................................................... 24 IDD7 Conditions .......................................................................................................................................... 24 AC Timing Operating Specifications ................................................................................................................ 28 AC and DC Operating Conditions .................................................................................................................... 37 ODT DC Electrical Characteristics ................................................................................................................... 38 Input Electrical Characteristics and Operating Conditions ............................................................................... 39 Output Electrical Characteristics and Operating Conditions ............................................................................. 42 Output Driver Characteristics ......................................................................................................................... 44 Power and Ground Clamp Characteristics ....................................................................................................... 48 AC Overshoot/Undershoot Specification ......................................................................................................... 49 Input Slew Rate Derating ................................................................................................................................ 51 Commands .................................................................................................................................................... 64 Truth Tables ............................................................................................................................................... 64 DESELECT ................................................................................................................................................. 68 NO OPERATION (NOP) .............................................................................................................................. 69 LOAD MODE (LM) ..................................................................................................................................... 69 ACTIVATE .................................................................................................................................................. 69 READ ......................................................................................................................................................... 69 WRITE ....................................................................................................................................................... 69 PRECHARGE .............................................................................................................................................. 70 REFRESH ................................................................................................................................................... 70 SELF REFRESH ........................................................................................................................................... 70 Mode Register (MR) ........................................................................................................................................ 70 Burst Length .............................................................................................................................................. 71 Burst Type ................................................................................................................................................. 72 Operating Mode ......................................................................................................................................... 72 DLL RESET ................................................................................................................................................. 72 Write Recovery ........................................................................................................................................... 73 Power-Down Mode .................................................................................................................................... 73 CAS Latency (CL) ........................................................................................................................................ 74 Extended Mode Register (EMR) ....................................................................................................................... 75 DLL Enable/Disable ................................................................................................................................... 76 Output Drive Strength ................................................................................................................................ 76 DQS# Enable/Disable ................................................................................................................................. 76 RDQS Enable/Disable ................................................................................................................................. 76 Output Enable/Disable ............................................................................................................................... 76 On-Die Termination (ODT) ........................................................................................................................ 77 PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Features Off-Chip Driver (OCD) Impedance Calibration ............................................................................................ 77 Posted CAS Additive Latency (AL) ............................................................................................................... 77 Extended Mode Register 2 (EMR2) .................................................................................................................. 79 Extended Mode Register 3 (EMR3) .................................................................................................................. 80 Initialization .................................................................................................................................................. 81 ACTIVATE ...................................................................................................................................................... 84 READ ............................................................................................................................................................. 86 READ with Precharge ................................................................................................................................. 90 READ with Auto Precharge .......................................................................................................................... 92 WRITE ........................................................................................................................................................... 97 PRECHARGE ................................................................................................................................................. 107 REFRESH ...................................................................................................................................................... 108 SELF REFRESH .............................................................................................................................................. 109 Power-Down Mode ....................................................................................................................................... 111 Precharge Power-Down Clock Frequency Change .......................................................................................... 118 Reset ............................................................................................................................................................. 119 CKE Low Anytime ...................................................................................................................................... 119 ODT Timing .................................................................................................................................................. 121 MRS Command to ODT Update Delay ........................................................................................................ 123 PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Features List of Figures Figure 1: 2Gb 1.55V DDR2 Part Numbers ......................................................................................................... 2 Figure 2: Simplified State Diagram ................................................................................................................... 8 Figure 3: Functional Block Diagram – 512 Meg x 4 .......................................................................................... 11 Figure 4: Functional Block Diagram – 256 Meg x 8 .......................................................................................... 12 Figure 5: Functional Block Diagram – 128 Meg x 16 ........................................................................................ 13 Figure 6: 60-Ball FBGA – x4, x8 Ball Assignments (Top View) ........................................................................... 14 Figure 7: 84-Ball FBGA – x16 Ball Assignments (Top View) .............................................................................. 15 Figure 8: 84-Ball FBGA Package (9mm x 12.5mm) – x16 ................................................................................... 18 Figure 9: 60-Ball FBGA Package (9mm x 11.5mm) – x4, x8 ............................................................................... 19 Figure 10: Example Temperature Test Point Location ..................................................................................... 22 Figure 11: Single-Ended Input Signal Levels ................................................................................................... 39 Figure 12: Differential Input Signal Levels ...................................................................................................... 40 Figure 13: Differential Output Signal Levels .................................................................................................... 42 Figure 14: Output Slew Rate Load .................................................................................................................. 43 Figure 15: Full Strength Pull-Down Characteristics ......................................................................................... 44 Figure 16: Full Strength Pull-Up Characteristics ............................................................................................. 45 Figure 17: Reduced Strength Pull-Down Characteristics ................................................................................. 46 Figure 18: Reduced Strength Pull-Up Characteristics ...................................................................................... 47 Figure 19: Input Clamp Characteristics .......................................................................................................... 48 Figure 20: Overshoot ..................................................................................................................................... 49 Figure 21: Undershoot .................................................................................................................................. 49 Figure 22: Nominal Slew Rate for tIS .............................................................................................................. 54 Figure 23: Tangent Line for tIS ....................................................................................................................... 54 Figure 24: Nominal Slew Rate for tIH .............................................................................................................. 55 Figure 25: Tangent Line for tIH ...................................................................................................................... 55 Figure 26: Nominal Slew Rate for tDS ............................................................................................................. 60 Figure 27: Tangent Line for tDS ...................................................................................................................... 60 Figure 28: Nominal Slew Rate for tDH ............................................................................................................ 61 Figure 29: Tangent Line for tDH ..................................................................................................................... 61 Figure 30: AC Input Test Signal Waveform Command/Address Balls ............................................................... 62 Figure 31: AC Input Test Signal Waveform for Data with DQS, DQS# (Differential) ........................................... 62 Figure 32: AC Input Test Signal Waveform for Data with DQS (Single-Ended) .................................................. 63 Figure 33: AC Input Test Signal Waveform (Differential) ................................................................................. 63 Figure 34: MR Definition ............................................................................................................................... 71 Figure 35: CL ................................................................................................................................................ 74 Figure 36: EMR Definition ............................................................................................................................. 75 Figure 37: READ Latency ............................................................................................................................... 78 Figure 38: WRITE Latency ............................................................................................................................. 78 Figure 39: EMR2 Definition ........................................................................................................................... 79 Figure 40: EMR3 Definition ........................................................................................................................... 80 Figure 41: DDR2 Power-Up and Initialization ................................................................................................. 81 Figure 42: Example: Meeting tRRD (MIN) and tRCD (MIN) .............................................................................. 84 Figure 43: Multibank Activate Restriction ....................................................................................................... 85 Figure 44: READ Latency ............................................................................................................................... 87 Figure 45: Consecutive READ Bursts .............................................................................................................. 88 Figure 46: Nonconsecutive READ Bursts ........................................................................................................ 89 Figure 47: READ Interrupted by READ ........................................................................................................... 90 Figure 48: READ-to-WRITE ............................................................................................................................ 90 Figure 49: READ-to-PRECHARGE – BL = 4 ...................................................................................................... 91 Figure 50: READ-to-PRECHARGE – BL = 8 ...................................................................................................... 91 PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Features Figure 51: Figure 52: Figure 53: Figure 54: Figure 55: Figure 56: Figure 57: Figure 58: Figure 59: Figure 60: Figure 61: Figure 62: Figure 63: Figure 64: Figure 65: Figure 66: Figure 67: Figure 68: Figure 69: Figure 70: Figure 71: Figure 72: Figure 73: Figure 74: Figure 75: Figure 76: Figure 77: Figure 78: Figure 79: Figure 80: Figure 81: Figure 82: Figure 83: Figure 84: Figure 85: Figure 86: Bank Read – Without Auto Precharge ............................................................................................. 93 Bank Read – with Auto Precharge ................................................................................................... 94 x4, x8 Data Output Timing – tDQSQ, tQH, and Data Valid Window .................................................. 95 x16 Data Output Timing – tDQSQ, tQH, and Data Valid Window ...................................................... 96 Data Output Timing – tAC and tDQSCK .......................................................................................... 97 Write Burst .................................................................................................................................... 99 Consecutive WRITE-to-WRITE ...................................................................................................... 100 Nonconsecutive WRITE-to-WRITE ................................................................................................ 100 WRITE Interrupted by WRITE ....................................................................................................... 101 WRITE-to-READ ........................................................................................................................... 102 WRITE-to-PRECHARGE ................................................................................................................ 103 Bank Write – Without Auto Precharge ............................................................................................ 104 Bank Write – with Auto Precharge ................................................................................................. 105 WRITE – DM Operation ................................................................................................................ 106 Data Input Timing ........................................................................................................................ 107 Refresh Mode ............................................................................................................................... 108 Self Refresh .................................................................................................................................. 110 Power-Down ................................................................................................................................ 112 READ-to-Power-Down or Self Refresh Entry .................................................................................. 114 READ with Auto Precharge-to-Power-Down or Self Refresh Entry .................................................. 114 WRITE-to-Power-Down or Self Refresh Entry ................................................................................ 115 WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry ................................................. 115 REFRESH Command-to-Power-Down Entry ................................................................................. 116 ACTIVATE Command-to-Power-Down Entry ................................................................................ 116 PRECHARGE Command-to-Power-Down Entry ............................................................................ 117 LOAD MODE Command-to-Power-Down Entry ............................................................................ 117 Input Clock Frequency Change During Precharge Power-Down Mode ........................................... 118 RESET Function ........................................................................................................................... 120 ODT Timing for Entering and Exiting Power-Down Mode .............................................................. 122 Timing for MRS Command to ODT Update Delay .......................................................................... 123 ODT Timing for Active or Fast-Exit Power-Down Mode ................................................................. 123 ODT Timing for Slow-Exit or Precharge Power-Down Modes ......................................................... 124 ODT Turn-Off Timings When Entering Power-Down Mode ............................................................ 124 ODT Turn-On Timing When Entering Power-Down Mode ............................................................. 125 ODT Turn-Off Timing When Exiting Power-Down Mode ............................................................... 126 ODT Turn-On Timing When Exiting Power-Down Mode ................................................................ 127 PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Features List of Tables Table 1: Key Timing Parameters ...................................................................................................................... 1 Table 2: Addressing ......................................................................................................................................... 2 Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions .......................................................................... 16 Table 4: Input Capacitance ............................................................................................................................ 20 Table 5: Absolute Maximum DC Ratings ........................................................................................................ 21 Table 6: Temperature Limits .......................................................................................................................... 22 Table 7: Thermal Impedance ......................................................................................................................... 23 Table 8: General IDD Parameters .................................................................................................................... 24 Table 9: IDD7 Timing Patterns (8-Bank Interleave READ Operation) ................................................................. 25 Table 10: DDR2 IDD Specifications and Conditions ......................................................................................... 26 Table 11: AC Operating Specifications and Conditions .................................................................................... 28 Table 12: Recommended DC Operating Conditions (SSTL_18) ........................................................................ 37 Table 13: ODT DC Electrical Characteristics ................................................................................................... 38 Table 14: Input DC Logic Levels ..................................................................................................................... 39 Table 15: Input AC Logic Levels ..................................................................................................................... 39 Table 16: Differential Input Logic Levels ........................................................................................................ 40 Table 17: Differential AC Output Parameters .................................................................................................. 42 Table 18: Output DC Current Drive ................................................................................................................ 42 Table 19: Output Characteristics .................................................................................................................... 43 Table 20: Full Strength Pull-Down Current (mA) ............................................................................................ 44 Table 21: Full Strength Pull-Up Current (mA) ................................................................................................. 45 Table 22: Reduced Strength Pull-Down Current (mA) ..................................................................................... 46 Table 23: Reduced Strength Pull-Up Current (mA) .......................................................................................... 47 Table 24: Input Clamp Characteristics ........................................................................................................... 48 Table 25: Address and Control Balls ............................................................................................................... 49 Table 26: Clock, Data, Strobe, and Mask Balls ................................................................................................. 49 Table 27: AC Input Test Conditions ................................................................................................................ 50 Table 28: DDR2-400/533 Setup and Hold Time Derating Values (tIS and tIH) ................................................... 52 Table 29: DDR2-667/800/1066 Setup and Hold Time Derating Values (tIS and tIH) .......................................... 53 Table 30: DDR2-400/533 tDS, tDH Derating Values with Differential Strobe ..................................................... 56 Table 31: DDR2-667/800/1066 tDS, tDH Derating Values with Differential Strobe ............................................ 57 Table 32: Single-Ended DQS Slew Rate Derating Values Using tDSb and tDHb .................................................. 58 Table 33: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-667 ..................................... 58 Table 34: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-533 ..................................... 59 Table 35: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-400 ..................................... 59 Table 36: Truth Table – DDR2 Commands ..................................................................................................... 64 Table 37: Truth Table – Current State Bank n – Command to Bank n ............................................................... 65 Table 38: Truth Table – Current State Bank n – Command to Bank m .............................................................. 67 Table 39: Minimum Delay with Auto Precharge Enabled ................................................................................. 68 Table 40: Burst Definition .............................................................................................................................. 72 Table 41: READ Using Concurrent Auto Precharge ......................................................................................... 92 Table 42: WRITE Using Concurrent Auto Precharge ........................................................................................ 98 Table 43: Truth Table – CKE ......................................................................................................................... 113 PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM State Diagram State Diagram Figure 2: Simplified State Diagram CKE_L Initialization sequence OCD default Self refreshing SR PRE H KE_ C Setting MRS EMRS Idle all banks precharged (E)MRS REFRESH CK E_ CK H Refreshing L E_ E_ CK L Precharge powerdown CKE_L Automatic Sequence Command Sequence ACT CKE_L ACT = ACTIVATE CKE_H = CKE HIGH, exit power-down or self refresh CKE_L = CKE LOW, enter power-down (E)MRS = (Extended) mode register set PRE = PRECHARGE PRE_A = PRECHARGE ALL READ = READ READ A = READ with auto precharge REFRESH = REFRESH SR = SELF REFRESH WRITE = WRITE WRITE A = WRITE with auto precharge Activating _L CKE Active powerdown CK CKE_ E_L H Bank active E EA RE AD W A Writing READ WRITE REA Reading A ITE WR DA READ A PR WRITE A READ AD RIT W RE RIT WRITE E_ PR , E A PRE, PRE_A PR E_ PR A E, Writing with auto precharge Reading with auto precharge Precharging Note: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. This diagram provides the basic command flow. It is not comprehensive and does not identify all timing requirements or possible command restrictions such as multibank interaction, power down, entry/exit, etc. 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Functional Description Functional Description The 1.55V DDR2 SDRAM is a lower-voltage device and backward compatible with the 1.8V DDR2 device. The differences between the 1.55V and 1.8V DDR2 devices will be noted. The DDR2 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single read or write access for the DDR2 SDRAM effectively consists of a single 4n-bit-wide, oneclock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. The x16 offering has two data strobes, one for the lower byte (LDQS, LDQS#) and one for the upper byte (UDQS, UDQS#). The DDR2 SDRAM operates from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS as well as to both edges of CK. Read and write accesses to the DDR2 SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access. The DDR2 SDRAM provides for programmable read or write burst lengths of four or eight locations. DDR2 SDRAM supports interrupting a burst read of eight with another read or a burst write of eight with another write. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard DDR SDRAM, the pipelined, multibank architecture of DDR2 SDRAM enables concurrent operation, thereby providing high, effective bandwidth by hiding row precharge and activation time. A self refresh mode is provided, along with a power-saving, power-down mode. All inputs are compatible with the JEDEC standard for SSTL_18. All full drive-strength outputs are SSTL_18-compatible. Industrial Temperature The industrial temperature (IT) option, if offered, has two simultaneous requirements: ambient temperature surrounding the device cannot be less than –40°C or greater than +85°C, and the case temperature cannot be less than –40°C or greater than +95°C. JEDEC specifications require the refresh rate to double when TC exceeds +85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance, the input/output impedance and IDD values must be derated when TC is < 0°C or > +85°C. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Functional Description Automotive Temperature The automotive temperature (AT) option, if offered, has two simultaneous requirements: ambient temperature surrounding the device cannot be less than –40°C or greater than +105°C, and the case temperature cannot be less than –40°C or greater than +105°C. JEDEC specifications require the refresh rate to double when TC exceeds +85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance, the input/output impedance and IDD values must be derated when TC is < 0°C or > +85°C. General Notes • The functionality and the timing specifications discussed in this data sheet are for the DLL-enabled mode of operation. • Throughout the data sheet, the various figures and text refer to DQs as “DQ.” The DQ term is to be interpreted as any and all DQ collectively, unless specifically stated otherwise. Additionally, the x16 is divided into 2 bytes: the lower byte and the upper byte. For the lower byte (DQ0–DQ7), DM refers to LDM and DQS refers to LDQS. For the upper byte (DQ8–DQ15), DM refers to UDM and DQS refers to UDQS. • Complete functionality is described throughout the document, and any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. • Any specific requirement takes precedence over a general statement. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Functional Block Diagrams Functional Block Diagrams The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory. It is internally configured as a multibank DRAM. Figure 3: Functional Block Diagram – 512 Meg x 4 ODT CKE CK CK# Command decode CS# RAS# CAS# WE# Control logic 15 Mode registers 18 Refresh 15 counter 15 Rowaddress MUX Bank 7 Bank 7 Bank 6 Bank 6 Bank 5 Bank 5 Bank 4 Bank 4 Bank 3 Bank 3 Bank 2 Bank 2 Bank 1 Bank 1 Bank 0 Bank 0 rowMemory array address latch 32,768 (32,768 x 512 x 16) and decoder 4 16 Read latch MUX 16 1 Address 18 register 2 3 11 Bank control logic Columnaddress counter/ latch Write FIFO 16 and drivers 512 (x16) 9 Column decoder CK, CK# 2 COL0, COL1 CK out CK in sw1 4 4 4 4 DRVRS DATA DQS generator I/O gating DM mask logic ODT control Vdd Q sw1 sw2 sw3 DLL 4 Sense amplifiers 8,192 A0–A14, BA0–BA2 CK, CK# COL0, COL1 Input registers 2 sw2 sw3 R1 R2 R3 R1 R2 R3 sw1 sw2 sw3 DQS, DQS# 1 1 1 1 R1 R2 R3 R1 R2 R3 sw1 sw2 sw3 1 1 1 1 4 4 16 4 4 4 R1 R2 R3 4 4 R1 R2 R3 Mask Data DQ0–DQ3 4 DQS, DQS# RCVRS 4 DM 2 Vss Q PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Functional Block Diagrams Figure 4: Functional Block Diagram – 256 Meg x 8 ODT CKE CK CK# Command decode CS# RAS# CAS# WE# Control logic 15 Mode registers 18 Refresh 15 counter 15 Rowaddress MUX Bank 7 Bank 7 Bank 6 Bank 6 Bank 5 Bank 5 Bank 4 Bank 4 Bank 3 Bank 3 Bank 2 Bank 2 Bank 1 Bank 1 Bank 0 Bank 0 rowMemory array address latch 32,768 (32,768 x 256 x 32) and decoder Address 18 register 8 32 Read latch 2 3 10 Bank control logic Columnaddress counter/ latch MUX DRVRS Data 2 UDQS, UDQS# Input LDQS, LDQS# registers 2 2 32 Write FIFO 32 and drivers 256 (x32) 8 sw1 8 8 8 DQS generator I/O gating DM mask logic Column decoder CK,CK# 2 COL0, COL1 CK out CK in ODT control VddQ sw1 sw2 sw3 DLL 8 Sense amplifers 8,192 A0–A14, BA0–BA2 CK, CK# COL0, COL1 4 Mask 2 2 2 2 2 sw2 sw3 R1 R2 R3 R1 R2 R3 sw1 sw2 sw3 R1 R2 R3 R1 R2 R3 2 8 8 32 8 8 8 R1 R2 R3 8 8 R1 R2 R3 8 RCVRS 8 DQS, DQS# RDQS# 2 Data DQ0–DQ7 sw1 sw2 sw3 RDQS DM 2 VssQ PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Functional Block Diagrams Figure 5: Functional Block Diagram – 128 Meg x 16 ODT CKE CK CK# Command decode CS# RAS# CAS# WE# Control logic 14 Mode registers 16 Refresh 14 counter 14 Rowaddress MUX Bank 7 Bank 7 Bank 6 Bank 6 Bank 5 Bank 5 Bank 4 Bank 4 Bank 3 Bank 3 Bank 2 Bank 2 Bank 1 Bank 1 Bank 0 Bank 0 rowMemory array address latch 16,384 (16,384 x 256 x 64) and decoder 16 Address register Read latch 2 3 10 Bank control logic Columnaddress counter/ latch 16 16 DRVRS MUX DATA 4 UDQS, UDQS# Input LDQS, LDQS# registers 2 2 64 8 2 WRITE 2 FIFO Mask 2 and 64 drivers 16 256 (x64) 8 sw1 16 DQS generator I/O gating DM mask logic Column decoder CK, CK# 2 COL0, COL1 CK out CK in ODT control VddQ sw1 sw2 sw3 DLL 16 64 Sense amplifier 16,384 A0–A13, BA0–BA2 CK, CK# COL0, COL1 16 64 16 16 Data 16 2 2 2 2 sw2 sw3 R1 R2 R3 R1 R2 R3 sw1 sw2 sw3 R1 R2 R3 R1 R2 R3 sw1 sw2 sw3 DQ0–DQ15 UDQS, UDQS# LDQS, LDQS# RCVRS 16 16 16 16 R1 R2 R3 16 R1 R2 R3 UDM, LDM 4 VssQ PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Ball Assignments and Descriptions Ball Assignments and Descriptions Figure 6: 60-Ball FBGA – x4, x8 Ball Assignments (Top View) 1 2 3 4 5 6 7 8 9 A VDD NF, RDQS#/NU VSS VSSQ DQS#/NU VDDQ B NF, DQ6 VSSQ DM, DM/RDQS DQS VSSQ NF, DQ7 C VDDQ DQ1 VDDQ VDDQ DQ0 VDDQ NF, DQ4 VSSQ DQ3 DQ2 VSSQ NF, DQ5 VDDL VREF VSS VSSDL CK VDD CKE WE# RAS# CK# ODT BA0 BA1 CAS# CS# A10 A1 A2 A0 A3 A5 A6 A4 A7 A9 A11 A8 A12 A14 RFU A13 D E F G BA2 H VDD J VSS K VSS L VDD PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Ball Assignments and Descriptions Figure 7: 84-Ball FBGA – x16 Ball Assignments (Top View) 1 2 3 4 5 6 7 8 9 VDD NC VSS DQ14 VSSQ UDM UDQS VSSQ DQ15 VDDQ DQ9 VDDQ VDDQ DQ8 VDDQ DQ12 VSSQ DQ11 DQ10 VSSQ DQ13 VDD NC VSS DQ6 VSSQ LDM LDQS VSSQ DQ7 VDDQ DQ1 VDDQ VDDQ DQ0 VDDQ DQ4 VSSQ DQ3 DQ2 VSSQ DQ5 VDDL VREF VSS VSSDL CK VDD CKE WE# RAS# CK# ODT BA0 BA1 CAS# CS# A10 A1 A2 A0 A3 A5 A6 A4 A7 A9 A11 A8 A12 RFU RFU A13 A VSSQ UDQS#/NU VDDQ B C D E VSSQ LDQS#/NU VDDQ F G H J K L BA2 M VDD N VSS P VSS R VDD PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Ball Assignments and Descriptions Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions Symbol Type Description A[13:0] (x16) A[14:0] (x4, x8) Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. BA[2:0] Input Bank address inputs: BA[2:0] define to which bank an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register, including MR, EMR, EMR(2), and EMR(3), is loaded during the LOAD MODE command. CK, CK# Input Clock: CK and CK# are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK#. Output data (DQ and DQS/DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates clocking circuitry on the DDR2 SDRAM. The specific circuitry that is enabled/disabled is dependent on the DDR2 SDRAM configuration and operating mode. CKE LOW provides precharge power-down and SELF REFRESH operation (all banks idle), or ACTIVATE powerdown (row active in any bank). CKE is synchronous for power-down entry, power-down exit, output disable, and for self refresh entry. CKE is asynchronous for SELF REFRESH exit. Input buffers (excluding CK, CK#, CKE, and ODT) are disabled during power-down. Input buffers (excluding CKE) are disabled during self refresh. CKE is an SSTL_18 input but will detect a LVCMOS LOW level once VDD is applied during first power-up. After VREF has become stable during the power on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper SELF REFRESH operation, VREF must be maintained. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered high. CS# provides for external bank selection on systems with multiple ranks. CS# is considered part of the command code. LDM, UDM (DM) Input Input data mask: DM is an input mask signal for write data. Input data is masked when DM is concurrently sampled HIGH during a WRITE access. DM is sampled on both edges of DQS. Although DM balls are input-only, the DM loading is designed to match that of DQ and DQS balls. LDM is DM for lower byte DQ[7:0] and UDM is DM for upper byte DQ[15:8]. ODT Input On-die termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When enabled, ODT is only applied to each of the following balls: DQ[15:0], LDM, UDM, LDQS, LDQS#, UDQS, and UDQS# for the x16; DQ[7:0], DQS, DQS#, RDQS, RDQS#, and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input will be ignored if disabled via the LOAD MODE command. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered. DQ[15:0] (x16) DQ[3:0] (x4) DQ[7:0] (x8) I/O PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Data input/output: Bidirectional data bus for 128 Meg x 16. Bidirectional data bus for 512 Meg x 4. Bidirectional data bus for 256 Meg x 8. 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Ball Assignments and Descriptions Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions (Continued) Symbol Type DQS, DQS# I/O Description Data strobe: Output with read data, input with write data for source synchronous operation. Edge-aligned with read data, center-aligned with write data. DQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. LDQS, LDQS# I/O Data strobe for lower byte: Output with read data, input with write data for source synchronous operation. Edge-aligned with read data, center-aligned with write data. LDQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. UDQS, UDQS# I/O Data strobe for upper byte: Output with read data, input with write data for source synchronous operation. Edge-aligned with read data, center-aligned with write data. UDQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. RDQS, RDQS# Output Redundant data strobe: For x8 only. RDQS is enabled/disabled via the LOAD MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS is output with read data only and is ignored during write data. When RDQS is disabled, ball B3 becomes data mask (see DM ball). RDQS# is only used when RDQS is enabled and differential data strobe mode is enabled. VDD Supply Power supply: 1.55V, -0.05V, +0.35V. VDDQ Supply DQ power supply: 1.55V, -0.05V, +0.35V. Isolated on the device for improved noise immunity. VDDL Supply DLL power supply: 1.55V, -0.05V, +0.35V. VREF Supply SSTL_18 reference voltage. VSS Supply Ground. VSSDL Supply DLL ground: Isolated on the device from VSS and VSSQ. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. NC – No connect: These balls should be left unconnected. NF – No function: Not used only on x4. These are data lines on the x8. NU – Not used: Not used only on x16. If EMR[E10] = 0, A8 and E8 are UDQS# and LDQS#. If EMR[E10] = 1, then A8 and E8 are not used. NU – Not used: For x4: Not used. For x8: If EMR[E10] = 0, E2 and E8 are RDQS# and DQS#; if EMR[E10] = 1, then E2 and E8 are not used. RFU – Reserved for future use: Row address bits A14 (R3), A15 (R7) on the x16, and A15 (L7) on the x4/x8. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Packaging Packaging Package Dimensions Figure 8: 84-Ball FBGA Package (9mm x 12.5mm) – x16 0.8 ±0.05 0.155 Seating plane A 0.12 A 1.8 CTR Nonconductive overmold 84X Ø0.45 Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). Dimensions apply to solder balls post-reflow 9 8 7 on Ø0.35 SMD ball pads. Ball A1 ID 3 2 Ball A1 ID 1 A B C D E F G H 11.2 CTR 12.5 ±0.1 J K L M N P 0.8 TYP R 0.8 TYP 1.2 MAX 6.4 CTR 0.25 MIN 9 ±0.1 Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu) or leaded Eutectic (62% Sn, 36%Pb, 2% Ag). 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Packaging Figure 9: 60-Ball FBGA Package (9mm x 11.5mm) – x4, x8 0.8 ±0.05 0.155 Seating plane 1.8 CTR A 0.12 A 60X Ø0.45 Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). Dimensions apply to solder balls postreflow on Ø0.35 SMD ball pads. 9 8 7 Ball A1 ID 3 2 1 Ball A1 ID A B C D E 8 CTR F 11.5 ±0.1 G H J K 0.8 TYP L 1.2 MAX 0.8 TYP 0.25 MIN 6.4 CTR 9 ±0.1 Note: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. All dimensions are in millimeters. 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Packaging FBGA Package Capacitance Table 4: Input Capacitance Parameter Symbol Min Max Units Notes Input capacitance: CK, CK# CCK 1.0 2.0 pF 1 Delta input capacitance: CK, CK# CDCK – 0.25 pF 2, 3 Input capacitance: BA[2:0], A[14:0] (A[13:0] on x16), CS#, RAS#, CAS#, WE#, CKE, ODT CI 1.0 2.0 pF 1 Delta input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, ODT CDI – 0.25 pF 2, 3 Input/output capacitance: DQ, DQS, DM, NF CIO 2.5 4.0 pF 1, 4 Delta input/output capacitance: DQ, DQS, DM, NF CDIO – 0.5 pF 2, 3 Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. This parameter is sampled. VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V, VREF = VSS, f = 100 MHz, TC = 25°C, VOUT(DC) = VDDQ/2, VOUT (peak-to-peak) = 0.1V. DM input is grouped with I/O balls, reflecting the fact that they are matched in loading. 2. The capacitance per ball group will not differ by more than this maximum amount for any given device. 3. ΔC are not pass/fail parameters; they are targets. 4. Reduce MAX limit by 0.25pF for -3/-3E speed devices. 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Electrical Specifications – Absolute Ratings Electrical Specifications – Absolute Ratings Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Table 5: Absolute Maximum DC Ratings Parameter Symbol Min Max Units Notes VDD supply voltage relative to VSS VDD –1.0 2.3 V 1 VDDQ supply voltage relative to VSSQ VDDQ –0.5 2.3 V 1, 2 VDDL supply voltage relative to VSSL VDDL –0.5 2.3 V 1 Voltage on any ball relative to VSS VIN, VOUT –0.5 2.3 V 3 II –5 5 µA IOZ –5 5 µA IVREF –2 2 µA Input leakage current; any input 0V ≤ VIN ≤ VDD; all other balls not under test = 0V) Output leakage current; 0V ≤ VOUT ≤ VDDQ; DQ and ODT disabled VREF leakage current; VREF = valid VREF level Notes: 1. VDD, VDDQ, and VDDL must be within 300mV of each other at all times; this is not required when power is ramping down. 2. VREF ≤ 0.6 x VDDQ; however, VREF may be ≥ VDDQ provided that VREF ≤ 300mV. 3. Voltage on any I/O may not exceed voltage on VDDQ. Temperature and Thermal Impedance It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in Table 6 (page 22), be maintained in order to ensure the junction temperature is in the proper operating range to meet data sheet specifications. An important step in maintaining the proper junction temperature is using the device’s thermal impedances correctly. The thermal impedances are listed in Table 7 (page 23) for the applicable and available die revision and packages. Incorrectly using thermal impedances can produce significant errors. Read Micron technical note TN-00-08, “Thermal Applications,” prior to using the thermal impedances listed in Table 7. For designs that are expected to last several years and require the flexibility to use several designs, consider using final target theta values, rather than existing values, to account for larger thermal impedances. The DDR2 SDRAM device’s safe junction temperature range can be maintained when the TC specification is not exceeded. In applications where the device’s ambient temperature is too high, use of forced air and/or heat sinks may be required in order to satisfy the case temperature specifications. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Electrical Specifications – Absolute Ratings Table 6: Temperature Limits Parameter Storage temperature Symbol Min Max Units Notes TSTG –55 150 °C 1 Operating temperature – commercial TC 0 85 °C 2, 3 Operating temperature – industrial TC –40 95 °C 2, 3, 4 TA –40 85 °C 4, 5 Notes: 1. MAX storage case temperature TSTG is measured in the center of the package, as shown in Figure 10. This case temperature limit is allowed to be exceeded briefly during package reflow, as noted in Micron technical note TN-00-15, “Recommended Soldering Parameters.” 2. MAX operating case temperature TC is measured in the center of the package, as shown in Figure 10. 3. Device functionality is not guaranteed if the device exceeds maximum TC during operation. 4. Both temperature specifications must be satisfied. 5. Operating ambient temperature surrounding the package. Figure 10: Example Temperature Test Point Location Test point Length (L) 0.5 (L) 0.5 (W) Width (W) Lmm x Wmm FBGA PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Electrical Specifications – Absolute Ratings Table 7: Thermal Impedance Die Rev C1 Package Substrate θ JA (°C/W) Airflow = 0m/s θ JA (°C/W) Airflow = 1m/s θ JA (°C/W) Airflow = 2m/s 60-ball 2-layer 63.8 46.9 40.8 29.9 4-layer 46.9 38.1 34.4 29.2 2-layer 60.0 43.5 37.9 26.0 4-layer 43.2 34.7 31.5 25.5 84-ball Note: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN θ JB (°C/W) θ JC (°C/W) 4.3 4.1 1. Thermal resistance data is based on a number of samples from multiple lots and should be viewed as a typical number. 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Electrical Specifications – IDD Parameters Electrical Specifications – IDD Parameters IDD Specifications and Conditions Table 8: General IDD Parameters IDD Parameters CL (IDD) tRCD tRC (IDD) (IDD) -187E -25E -25 -3E -3 -37E -5E Units 7 5 6 4 5 4 3 tCK 13.125 12.5 15 12 15 15 15 ns 58.125 57.5 60 57 60 60 55 ns tRRD (IDD) - x4/x8 (1KB) 7.5 7.5 7.5 7.5 7.5 7.5 7.5 ns tRRD (IDD) - x16 (2KB) 10 10 10 10 10 10 10 ns 1.875 2.5 2.5 3 3 3.75 5 ns tCK (IDD) tRAS MIN (IDD) 45 45 45 45 45 45 40 ns tRAS MAX (IDD) 70,000 70,000 70,000 70,000 70,000 70,000 70,000 ns 13.125 12.5 15 12 15 15 15 ns tRP (IDD) tRFC (IDD - 256Mb) 75 75 75 75 75 75 75 ns tRFC (IDD - 512Mb) 105 105 105 105 105 105 105 ns tRFC (IDD - 1Gb) 127.5 127.5 127.5 127.5 127.5 127.5 127.5 ns tRFC (IDD - 2Gb) 197.5 197.5 197.5 197.5 197.5 197.5 197.5 ns tFAW (IDD) - x4/x8 (1KB) Defined by pattern in Table 9 (page 25) ns tFAW (IDD) - x16 (2KB) Defined by pattern in Table 9 (page 25) ns IDD7 Conditions The detailed timings are shown below for IDD7. Changes will be required if timing parameter changes are made to the specification. Where general IDD parameters in Table 8 conflict with pattern requirements of Table 9 (page 25), then Table 9 requirements take precedence. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Electrical Specifications – IDD Parameters Table 9: IDD7 Timing Patterns (8-Bank Interleave READ Operation) Speed Grade IDD7 Timing Patterns Timing patterns for 8-bank x4/x8 devices -5E A0 RA0 A1 RA1 A2 RA2 A3 RA3 A4 RA4 A5 RA5 A6 RA6 A7 RA7 -37E A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D -3 A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D -3E A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D -25 A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D -25E A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D -187E A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D D Timing patterns for 8-bank x16 devices -5E A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D -37E A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D -3 A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D -3E A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D -25 A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D -25E A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D -187E A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D A4 RA4 D D D D A5 RA5 D D D D A6 RA6 D D D D A7 RA7 D D D D Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. A = active; RA = read auto precharge; D = deselect. 2. All banks are being interleaved at minimum tRC (IDD) without violating tRRD (IDD) using a BL = 4. 3. Control and address bus inputs are STABLE during DESELECTs. 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Electrical Specifications – IDD Parameters Table 10: DDR2 IDD Specifications and Conditions Notes 1–7 apply to the entire table Parameter/Condition Symbol Configuration Operating one bank active-precharge current: tCK = tCK (I ), tRC = tRC (I ), tRAS = tRAS MIN (I ); CKE DD DD DD is HIGH, CS# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD0 x4, x8 x16 Operating one bank active-read-precharge current: Iout = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (I ), tRAS = tRAS MIN (I ), tRCD = tRCD (I ); DD DD DD CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are switching; Data pattern is same as IDD4W IDD1 x4, x8 95 90 x16 125 120 Precharge power-down current: All banks idle; tCK = tCK (I ); CKE is LOW; Other control and address bus inDD puts are stable; Data bus inputs are floating IDD2P x4, x8, x16 12 12 mA Precharge quiet standby current: All banks idle; tCK = tCK (I ); CKE is HIGH, CS# is HIGH; Other control and adDD dress bus inputs are stable; Data bus inputs are floating IDD2Q x4, x8 35 30 mA x16 50 45 Precharge standby current: All banks idle; tCK = tCK (IDD); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are switching; Data bus inputs are switching IDD2N x4, x8 40 35 x16 55 50 Active power-down current: All banks open; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating IDD3Pf Fast PDN exit MR[12] = 0 30 25 IDD3Ps Slow PDN exit MR[12] = 1 14 14 Active standby current: All banks open; tCK = tCK (IDD), tRAS = tRAS MAX (I ), tRP = tRP (I ); CKE is HIGH, CS# is DD DD HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD3N x4, x8 50 45 x16 70 65 Operating burst write current: All banks open, continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4W x4, x8 150 130 x16 235 200 Operating burst read current: All banks open, continuous burst reads, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (I ), tRAS = tRAS MAX (I ), tRP = tRP (I ); CKE DD DD DD is HIGH, CS# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4R x4, x8 150 130 x16 235 200 Burst refresh current: tCK = tCK (IDD); refresh command at every tRFC (IDD) interval; CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD5 x4, x8 185 165 x16 220 200 PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 26 -25E/-25 -3E/-3 Units 80 75 mA 115 110 mA mA mA mA mA mA mA Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Electrical Specifications – IDD Parameters Table 10: DDR2 IDD Specifications and Conditions (Continued) Notes 1–7 apply to the entire table Parameter/Condition Symbol Configuration -25E/-25 -3E/-3 Units IDD6 x4, x8, x16 12 12 mA 8 8 x4, x8 250 225 x16 330 300 Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are floating; Data bus inputs are floating IDD6L Operating bank interleave read current: All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (I ) - 1 x tCK (I ); tCK = tCK (I ), tRC = tRC (I ), DD DD DD DD tRRD = tRRD (I ), tRCD = tRCD (I ); CKE is HIGH, CS# is DD DD HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching (see Table 9 (page 25) for details) Notes: IDD7 mA IDD specifications are tested after the device is properly initialized. 0°C ≤ TC ≤ +85°C. VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V, VDDL = +1.8V ±0.1V, VREF = VDDQ/2. IDD parameters are specified with ODT disabled. Data bus consists of DQ, DM, DQS, DQS#, RDQS, RDQS#, LDQS, LDQS#, UDQS, and UDQS#. IDD values must be met with all combinations of EMR bits 10 and 11. 5. Definitions for IDD conditions: 1. 2. 3. 4. LOW VIN ≤ VIL(AC)max VIN ≥ VIH(AC)min Inputs stable at a HIGH or LOW level Stable Inputs at VREF = VDDQ/2 Floating Switching Inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals Switching Inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals, not including masks or strobes 6. IDD1, IDD4R, and IDD7 require A12 in EMR1 to be enabled during testing. 7. The following IDD values must be derated (IDD limits increase) on IT-option devices when operated outside of the range 0°C ≤ TC ≤ 85°C: HIGH When TC ≤ 0°C When TC ≥ 85°C PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN IDD2P and IDD3P(SLOW) must be derated by 4%; IDD4R and IDD5W must be derated by 2%; and IDD6 and IDD7 must be derated by 7%. IDD0, IDD1, IDD2N, IDD2Q, IDD3N, IDD3P(FAST), IDD4R, IDD4W, and IDD5W must be derated by 2%; IDD2P must be derated by 20%; IDD3P slow must be derated by 30%; and IDD6 must be derated by 80% (IDD6 will increase by this amount if TC < 85°C and the 2x refresh option is still enabled). 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN AC Timing Operating Specifications Table 11: AC Operating Specifications and Conditions Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table; VDDQ = +1.5–1.9V, VDD = +1.5–1.9V AC Characteristics -25E -25 -3E -3 -37E Parameter Min Max Min Max (avg) 2.5 8.0 2.5 8.0 – – (avg) 2.5 8.0 3.0 8.0 3.0 8.0 tCK (avg) 3.75 8.0 3.75 8.0 3.0 8.0 3.75 tCK (avg) 5.0 8.0 5.0 8.0 5.0 8.0 5.0 8.0 5.0 8.0 CK high-level width tCH (avg) 0.48 0.52 0.48 0.52 0.48 0.52 0.48 0.52 0.48 CK low-level width tCL Clock Clock cycle time Symbol CL = 6 tCK CL = 5 tCK CL = 4 CL = 3 Half clock period 0.48 0.52 0.48 0.52 0.48 Max 0.52 tCH MIN = lesser of and MAX = n/a Min Max Min Max Units Notes – – – – ns 6, 7, 8, 9 3.0 8.0 – – 8.0 3.75 8.0 0.52 tCK 10 0.52 tCK 0.48 0.52 0.48 tCL ps 28 tCK (abs) MIN = tCK (AVG) MIN + tJITper (MIN) MAX = tCK (AVG) MAX + tJITper (MAX) ps Absolute CK high-level width tCH (abs) MIN = tCK (AVG) MIN × tCH (AVG) MIN + tJITdty (MIN) MAX = tCK (AVG) MAX × tCH (AVG) MAX + tJITdty (MAX) ps Absolute CK low-level width tCL (abs) MIN = tCK (AVG) MIN × tCL (AVG) MIN + tJITdty (MIN) MAX = tCK (AVG) MAX × tCL (AVG) MAX + tJITdty (MAX) ps 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Period jitter tJITper –100 100 –100 100 –125 125 –125 125 –125 125 ps 12 Half period tJITdty –100 100 –100 100 –125 125 –125 125 –125 125 ps 13 tJITcc 200 ps 14 200 250 250 250 Cumulative error, 2 cycles tERR –150 150 –150 150 –175 175 –175 175 –175 175 ps 15 Cumulative error, 3 cycles tERR –175 175 –175 175 –225 225 –225 225 –225 225 ps 15 Cumulative error, 4 cycles tERR –200 200 –200 200 –250 250 –250 250 –250 250 ps 15 Cumulative error, 5 cycles tERR 5per –200 200 –200 200 –250 250 –250 250 –250 250 ps 15, 16 2per 3per 4per Cumulative error, 6–10 cycles tERR 6–10per –300 300 –300 300 –350 350 –350 350 –350 350 ps 15, 16 Cumulative error, 11–50 cycles tERR 11–50per –450 450 –450 450 –450 450 –450 450 –450 450 ps 15 2Gb: x4, x8, x16 1.55V DDR2 SDRAM AC Timing Operating Specifications Absolute tCK Cycle to cycle Clock Jitter (avg) tHP Min Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table; VDDQ = +1.5–1.9V, VDD = +1.5–1.9V AC Characteristics -25E -25 -3E -3 -37E Parameter Data Strobe-Out PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Table 11: AC Operating Specifications and Conditions (Continued) 29 Symbol Min Max Min Max Min Max Min Max Min Max Units Notes tDQSCK –350 +350 –350 +350 –400 +400 –400 +400 –450 +450 ps 19 DQS read preamble tRPRE MIN = 0.9 × tCK MAX = 1.1 × tCK tCK 17, 18, 19 DQS read postamble tRPST MIN = 0.4 × tCK MAX = 0.6 × tCK tCK 17, 18, 19, 20 tLZ MIN = tAC (MIN) MAX = tAC (MAX) ps 19, 21, 22 DQS rising edge to CK rising edge tDQSS MIN = –0.25 × tCK MAX = +0.25 × tCK tCK 18 DQS input-high pulse width tDQSH MIN = 0.35 × tCK MAX = n/a tCK 18 DQS input-low pulse width tDQSL MIN = 0.35 × tCK MAX = n/a tCK 18 DQS falling to CK rising: setup time tDSS MIN = 0.2 × tCK MAX = n/a tCK 18 DQS falling from CK rising: hold time tDSH MIN = 0.2 × tCK MAX = n/a tCK 18 tWPRES MIN = 0 MAX = n/a ps 23, 24 DQS write preamble tWPRE MIN = 0.35 × tCK MAX = n/a tCK 18 DQS write postamble tWPST MIN = 0.4 × tCK MAX = 0.6 × tCK tCK 18, 25 – MIN = WL - tDQSS MAX = WL + tDQSS tCK CK/CK# to DQS Low-Z Write preamble setup time WRITE command to first DQS transition 1 2Gb: x4, x8, x16 1.55V DDR2 SDRAM AC Timing Operating Specifications Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Data Strobe-In DQS output access time from CK/CK# Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table; VDDQ = +1.5–1.9V, VDD = +1.5–1.9V AC Characteristics -25E -25 -3E -3 -37E Parameter Data-Out PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Table 11: AC Operating Specifications and Conditions (Continued) Symbol Min Max Min Max Min Max Min Max Min Max Units Notes DQ output access time from CK/CK# tAC –400 +400 –400 +400 –450 +450 –450 +450 –500 +500 ps 19 DQS–DQ skew, DQS to last DQ valid, per group, per access tDQSQ – 200 – 200 – 240 – 240 – 300 ps 26, 27 tQHS – 300 – 300 – 340 – 340 – 400 ps 28 DQ hold from next DQS strobe tQH MIN = tHP - tQHS MAX = n/a ps 26, 27, 28 CK/CK# to DQ, DQS High-Z tHZ MIN = n/a MAX = tAC (MAX) ps 19, 21, 29 CK/CK# to DQ Low-Z tLZ MIN = 2 × tAC (MIN) MAX = tAC (MAX) ps 19, 21, 22 Data valid output window DVW MIN = tQH - tDQSQ MAX = n/a ns 26, 27 DQ and DM input setup time to DQS tDSb 50 – 50 – 100 – 100 – 100 – ps 26, 30, 31 DQ and DM input hold time to DQS tDHb 125 – 125 – 175 – 175 – 225 – ps 26, 30, 31 DQ and DM input setup time to DQS tDSa 250 – 250 – 300 – 300 – 350 – ps 26, 30, 31 DQ and DM input hold time to DQS tDHa 250 – 250 – 300 – 300 – 350 – ps 26, 30, 31 DQ and DM input pulse width tDIPW tCK 18, 32 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Data-In 30 MIN = 0.35 × tCK MAX = n/a 2Gb: x4, x8, x16 1.55V DDR2 SDRAM AC Timing Operating Specifications DQ–DQS hold, DQS to first DQ not valid PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Table 11: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table; VDDQ = +1.5–1.9V, VDD = +1.5–1.9V AC Characteristics -25E -25 -3E -3 -37E Symbol Min Max Min Max Min Max Min Max Min Max Units Notes Input setup time Parameter tISb 175 – 175 – 200 – 200 – 250 – ps 31, 33 Input hold time tIHb 250 – 250 – 275 – 275 – 375 – ps 31, 33 Input setup time tISa 375 – 375 – 400 – 400 – 500 – ps 31, 33 Input hold time tIHa 375 – 375 – 400 – 400 – 500 – ps 31, 33 Input pulse width tIPW 0.6 – 0.6 – 0.6 – 0.6 – 0.6 – tCK 18, 32 tRC 55 – 55 – 54 – 55 – 55 – ns 18, 34 ACTIVATE-to-READ or WRITE delay tRCD 12.5 – 15 – 12 – 15 – 15 – ns 18 ACTIVATE-to- PRECHARGE delay tRAS 40 70K 40 70K 40 70K 40 70K 40 70K ns 18, 34, 35 tRP 12.5 – 15 – 12 – 15 – 15 – ns 18, 36 – 12 – 15 – 15 – ns 18, 36 31 PRECHARGE period PRECHARGE ALL period 1, such as frequencies faster than 533 MHz when tRTP = 7.5ns. If tRTP/(2 × tCK) ≤ 1, then equation AL + BL/2 applies. tRAS (MIN) has to be satisfied as well. The DDR2 SDRAM will automatically delay the internal PRECHARGE command until tRAS (MIN) has been satisfied. tDAL = (nWR) + (tRP/tCK). Each of these terms, if not already an integer, should be rounded up to the next integer. tCK refers to the application clock period; nWR refers to the tWR parameter stored in the MR9–MR11. For example, -37E at tCK = 3.75ns with tWR programmed to four clocks would have tDAL = 4 + (15ns/3.75ns) clocks = 4 + (4) clocks = 8 clocks. The refresh period is 64ms (commercial) or 32ms (industrial and automotive). This equates to an average refresh rate of 7.8125µs (commercial) or 3.9607µs (industrial and automotive). To ensure all rows of all banks are properly refreshed, 8,192 REFRESH commands must be issued every 64ms (commercial) or 32ms (industrial and automotive). The JEDEC tRFC MAX of 70,000ns is not required as bursting of AUTO REFRESH commands is allowed. tDELAY is calculated from tIS + tCK + tIH so that CKE registration LOW is guaranteed prior to CK, CK# being removed in a system RESET condition (see Reset (page 119)). tISXR is equal to tIS and is used for CKE setup time during self refresh exit, as shown in Figure 67 (page 110). tCKE (MIN) of three clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to achieve the three clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + 2 × tCK + tIH. The half-clock of tAOFD’s 2.5 tCK assumes a 50/50 clock duty cycle. This half-clock value must be derated by the amount of half-clock duty cycle error. For example, if the clock 36 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM AC and DC Operating Conditions 46. 47. 48. 49. 50. duty cycle was 47/53, tAOFD would actually be 2.5 - 0.03, or 2.47, for tAOF (MIN) and 2.5 + 0.03, or 2.53, for tAOF (MAX). ODT turn-on time tAON (MIN) is when the device leaves High-Z and ODT resistance begins to turn on. ODT turn-on time tAON (MAX) is when the ODT resistance is fully on. Both are measured from tAOND. ODT turn-off time tAOF (MIN) is when the device starts to turn off ODT resistance. ODT turn off time tAOF (MAX) is when the bus is in High-Z. Both are measured from tAOFD. Half-clock output parameters must be derated by the actual tERR5per and tJITdty when input clock jitter is present; this will result in each parameter becoming larger. The parameter tAOF (MIN) is required to be derated by subtracting both tERR5per (MAX) and tJITdty (MAX). The parameter tAOF (MAX) is required to be derated by subtracting both tERR t 5perx (MIN) and JITdty (MIN). The -187E maximum limit is 2 × tCK + tAC (MAX) + 1,000 but it will likely be 3 x tCK + tAC (MAX) + 1,000 in the future. Should use 8 tCK for backward compatibility. AC and DC Operating Conditions Table 12: Recommended DC Operating Conditions (SSTL_18) All voltages referenced to VSS Parameter Symbol Min Nom Max Units Notes VDD 1.5 1.55 1.9 V 1, 2 VDDL supply voltage VDDL 1.5 1.55 1.9 V 2, 3 I/O supply voltage VDDQ 1.5 1.55 1.9 V 2, 3 VREF(DC) 0.49 × VDDQ 0.50 × VDDQ 0.51 × VDDQ V 4 VTT VREF(DC) - 40 VREF(DC) VREF(DC) + 40 mV 5 Supply voltage I/O reference voltage I/O termination voltage (system) Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. VDD and VDDQ must track each other. If VDD < 1.7V, then VDD - 0.05V ≤ VDDQ ≤ VDD; else VDD - 0.1V ≤ VDDQ ≤ VDD. 2. VSSQ = VSSL = VSS. 3. VDDQ tracks with VDD; VDDL tracks with VDD. 4. VREF is expected to equal VDDQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise (noncommon mode) on VREF may not exceed ±1% of the DC value. Peak-to-peak AC noise on VREF may not exceed ±2% of VREF(DC). This measurement is to be taken at the nearest VREF bypass capacitor. 5. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF. 37 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM ODT DC Electrical Characteristics ODT DC Electrical Characteristics Table 13: ODT DC Electrical Characteristics All voltages are referenced to VSS; 1.55V DDR2 SDRAM has NOM and MAX limit increase by 8% when VDD is less than 1.7V. VDD = +1.5V to +1.9V, VDDQ = +1.5V to +1.9V. If VDD < 1.7V then VDD - 0.05V ≤ VDDQ ≤ VDD; else VDD - 0.1V ≤ VDDQ ≤ VDD. Voltage Parameter Symbol Min Min Nom Max Units Notes RTT effective impedance value for 75Ω setting EMR (A6, A2) = 0, 1 RTT1(EFF) RTT effective impedance value for 150Ω setting EMR (A6, A2) = 1, 0 RTT2(EFF) RTT effective impedance value for 50Ω setting EMR (A6, A2) = 1, 1 RTT3(EFF) Deviation of VM with respect to VDDQ/2 Notes: ΔVM 1.7V 60 75 90 Ω 1.5V 60 80 98 Ω 1.7V 120 150 180 Ω 1.5V 120 160 195 Ω 1.7V 40 50 60 Ω 1.5V 40 55 65 Ω – –6 – 6 % 1, 2 1, 2 1, 2 3 1. RTT1(EFF) and RTT2(EFF) are determined by separately applying VIH(AC) and VIL(DC) to the ball being tested, and then measuring current, I(VIH[AC]), and I(VIL[AC]), respectively. 2. Minimum IT and AT device values are derated by six percent when the devices operate between –40°C and 0°C (TC ). 3. Measure voltage (VM) at tested ball with no load. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 38 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Electrical Characteristics and Operating Conditions Input Electrical Characteristics and Operating Conditions Table 14: Input DC Logic Levels All voltages are referenced to VSS Parameter Symbol Min Max Units 1 Input high (logic 1) voltage VIH(DC) VREF(DC) + 125 VDDQ mV Input low (logic 0) voltage VIL(DC) –300 VREF(DC) - 125 mV Note: 1. VDDQ + 300mV allowed provided 1.9V is not exceeded. Table 15: Input AC Logic Levels All voltages are referenced to VSS Parameter Symbol Input high (logic 1) voltage (-37E/-5E) VIH(AC) Min Max VREF(DC) + 250 Units 1 mV 1 VDDQ Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3) VIH(AC) VREF(DC) + 200 VDDQ mV Input low (logic 0) voltage (-37E/-5E) VIL(AC) –300 VREF(DC) - 250 mV Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3) VIL(AC) –300 VREF(DC) - 200 mV Note: 1. Refer to AC Overshoot/Undershoot Specification (page 49). Figure 11: Single-Ended Input Signal Levels 1,150mV VIH(AC) 1,025mV VIH(DC) Note: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 936mV 918mV 900mV 882mV 864mV VREF + AC noise VREF + DC error VREF - DC error VREF - AC noise 775mV VIL(DC) 650mV VIL(AC) 1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values. 39 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Electrical Characteristics and Operating Conditions Table 16: Differential Input Logic Levels All voltages referenced to VSS Parameter Symbol Min Max Units Notes DC input signal voltage VIN(DC) –300 VDDQ mV 1, 6 DC differential input voltage VID(DC) 250 VDDQ mV 2, 6 AC differential input voltage VID(AC) 500 VDDQ mV 3, 6 AC differential cross-point voltage VIX(AC) 0.50 × VDDQ - 175 0.50 × VDDQ + 175 mV 4 Input midpoint voltage VMP(DC) 850 950 mV 5 Notes: 1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK#, DQS, DQS#, LDQS, LDQS#, UDQS, UDQS#, and RDQS, RDQS#. 2. VID(DC) specifies the input differential voltage |VTR - VCP| required for switching, where VTR is the true input (such as CK, DQS, LDQS, UDQS) level and VCP is the complementary input (such as CK#, DQS#, LDQS#, UDQS#) level. The minimum value is equal to VIH(DC) VIL(DC). Differential input signal levels are shown in Figure 12. 3. VID(AC) specifies the input differential voltage |VTR - VCP| required for switching, where VTR is the true input (such as CK, DQS, LDQS, UDQS, RDQS) level and VCP is the complementary input (such as CK#, DQS#, LDQS#, UDQS#, RDQS#) level. The minimum value is equal to VIH(AC) - VIL(AC), as shown in Table 15 (page 39). 4. The typical value of VIX(AC) is expected to be about 0.5 × VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ. VIX(AC) indicates the voltage at which differential input signals must cross, as shown in Figure 12. 5. VMP(DC) specifies the input differential common mode voltage (VTR + VCP)/2 where VTR is the true input (CK, DQS) level and VCP is the complementary input (CK#, DQS#). VMP(DC) is expected to be approximately 0.5 × VDDQ. 6. VDDQ + 300mV allowed provided 1.9V is not exceeded. Figure 12: Differential Input Signal Levels VIN(DC)max1 2.1V VDDQ = 1.8V CP2 1.075V X VMP(DC)3 0.9V 0.725V VIX(AC)4 VID(DC)5 VID(AC)6 X TR2 VIN(DC)min1 –0.30V Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. TR and CP may not be more positive than VDDQ + 0.3V or more negative than VSS - 0.3V. 2. TR represents the CK, DQS, RDQS, LDQS, and UDQS signals; CP represents CK#, DQS#, RDQS#, LDQS#, and UDQS# signals. 3. This provides a minimum of 850mV to a maximum of 950mV and is expected to be VDDQ/2. 4. TR and CP must cross in this region. 5. TR and CP must meet at least VID(DC)min when static and is centered around VMP(DC). 6. TR and CP must have a minimum 500mV peak-to-peak swing. 40 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Electrical Characteristics and Operating Conditions 7. Numbers in diagram reflect nominal values (VDDQ = 1.8V). PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 41 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Output Electrical Characteristics and Operating Conditions Output Electrical Characteristics and Operating Conditions Table 17: Differential AC Output Parameters Parameter Symbol Min Max Units Notes AC differential cross-point voltage VOX(AC) 0.50 × VDDQ - 125 0.50 × VDDQ + 125 mV 1 AC differential voltage swing Vswing 1.0 – mV Note: 1. The typical value of VOX(AC) is expected to be about 0.5 × VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ. VOX(AC) indicates the voltage at which differential output signals must cross. Figure 13: Differential Output Signal Levels VDDQ VTR Crossing point Vswing VOX VCP VSSQ Table 18: Output DC Current Drive Parameter Symbol Value Units Notes Output MIN source DC current IOH –13.4 mA 1, 2, 4 Output MIN sink DC current IOL 13.4 mA 2, 3, 4 Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. For IOH(DC); VDDQ = 1.7V, VOUT = 1,420mV. (VOUT - VDDQ)/IOH must be less than 21Ω for values of VOUT between VDDQ and VDDQ - 280mV. 2. For IOL(DC); VDDQ = 1.7V, VOUT = 280mV. VOUT/IOL must be less than 21Ω for values of VOUT between 0V and 280mV. 3. The DC value of VREF applied to the receiving device is set to VTT. 4. The values of IOH(DC) and IOL(DC) are based on the conditions given in Notes 1 and 2. They are used to test device drive current capability to ensure VIHmin plus a noise margin and VILmax minus a noise margin are delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating point (see output IV curves) along a 21Ω load line to define a convenient driver current for measurement. 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Output Electrical Characteristics and Operating Conditions Table 19: Output Characteristics Parameter Min Output impedance Max See Output Driver Characteristics (page 44) Units Notes Ω 1, 2 0 – 4 Ω 1, 2, 3 VDDmin = 1.7V 1.5 – 7 V/ns 4, 5, 6, 7 VDDmin = 1.5V 0.8 – 7 V/ns 4, 5, 6, 7 Pull-up and pull-down mismatch Output slew rate Nom Notes: 1. Absolute specifications: 0°C ≤ TC ≤ +85°C; VDDQ = +1.8V ±0.1V, VDD = +1.8V ±0.1V. 2. Impedance measurement conditions for output source DC current: VDDQ = 1.7V; VOUT = 1,420mV; (VOUT - VDDQ)/IOH must be less than 23.4Ω for values of VOUT between VDDQ and VDDQ - 280mV. The impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV; VOUT/IOL must be less than 23.4Ω for values of VOUT between 0V and 280mV. 3. Mismatch is an absolute value between pull-up and pull-down; both are measured at the same temperature and voltage. 4. Output slew rate for falling and rising edges is measured between VTT - 250mV and VTT + 250mV for single-ended signals. For differential signals (DQS, DQS#), output slew rate is measured between DQS - DQS# = –500mV and DQS# - DQS = +500mV. Output slew rate is guaranteed by design but is not necessarily tested on each device. 5. The absolute value of the slew rate as measured from VIL(DC)max to VIH(DC)min is equal to or greater than the slew rate as measured from VIL(AC)max to VIH(AC)min. This is guaranteed by design and characterization. 6. IT and AT devices require an additional 0.4 V/ns in the MAX limit when TC is between – 40°C and 0°C. 7. The output impedance drive curves MIN limit requires a 10% reduction when VDD is between 1.7V and 1.5V. Figure 14: Output Slew Rate Load VTT = VDDQ/2 Output (VOUT) PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 25Ω Reference point 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Output Driver Characteristics Output Driver Characteristics Figure 15: Full Strength Pull-Down Characteristics 120 100 IOUT (mA) 80 60 40 20 0 0.0 0.5 1.0 1.5 VOUT (V) Table 20: Full Strength Pull-Down Current (mA) Voltage (V) Min Nom Max 0.0 0.00 0.00 0.00 0.1 4.30 5.63 7.95 0.2 8.60 11.30 15.90 0.3 12.90 16.52 23.85 0.4 16.90 22.19 31.80 0.5 20.40 27.59 39.75 0.6 23.28 32.39 47.70 0.7 25.44 36.45 55.55 0.8 26.79 40.38 62.95 0.9 27.67 44.01 69.55 1.0 28.38 47.01 75.35 1.1 28.96 49.63 80.35 1.2 29.46 51.71 84.55 1.3 29.90 53.32 87.95 1.4 30.29 54.9 90.70 1.5 30.65 56.03 93.00 1.6 30.98 57.07 95.05 1.7 31.31 58.16 97.05 1.8 31.64 59.27 99.05 1.9 31.96 60.35 101.05 PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Output Driver Characteristics Figure 16: Full Strength Pull-Up Characteristics 0 –20 IOUT (mA) –40 –60 –80 –100 –120 0 0.5 1.0 1.5 VDDQ - VOUT (V) Table 21: Full Strength Pull-Up Current (mA) Voltage (V) PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Min Nom Max 0.0 0.00 0.00 0.00 0.1 –4.30 –5.63 –7.95 0.2 –8.60 –11.30 –15.90 0.3 –12.90 –16.52 –23.85 0.4 –16.90 –22.19 –31.80 0.5 –20.40 –27.59 –39.75 0.6 –23.28 –32.39 –47.70 0.7 –25.44 –36.45 –55.55 0.8 –26.79 –40.38 –62.95 0.9 –27.67 –44.01 –69.55 1.0 –28.38 –47.01 –75.35 1.1 –28.96 –49.63 –80.35 1.2 –29.46 –51.71 –84.55 1.3 –29.90 –53.32 –87.95 1.4 –30.29 –54.90 –90.70 1.5 –30.65 –56.03 –93.00 1.6 –30.98 –57.07 –95.05 1.7 –31.31 –58.16 –97.05 1.8 –31.64 –59.27 –99.05 1.9 –31.96 –60.35 –101.05 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Output Driver Characteristics Figure 17: Reduced Strength Pull-Down Characteristics 70 60 IOUT (mV) 50 40 30 20 10 0 0.0 0.5 1.0 1.5 VOUT (V) Table 22: Reduced Strength Pull-Down Current (mA) Voltage (V) Min Nom Max 0.0 0.00 0.00 0.00 0.1 1.72 2.98 4.77 0.2 3.44 5.99 9.54 0.3 5.16 8.75 14.31 0.4 6.76 11.76 19.08 0.5 8.16 14.62 23.85 0.6 9.31 17.17 28.62 0.7 10.18 19.32 33.33 0.8 10.72 21.40 37.77 0.9 11.07 23.32 41.73 1.0 11.35 24.92 45.21 1.1 11.58 26.30 48.21 1.2 11.78 27.41 50.73 1.3 11.96 28.26 52.77 1.4 12.12 29.10 54.42 1.5 12.26 29.70 55.80 1.6 12.39 30.25 57.03 1.7 12.52 30.82 58.23 1.8 12.66 31.41 59.43 1.9 12.78 31.98 60.63 PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Output Driver Characteristics Figure 18: Reduced Strength Pull-Up Characteristics 0 –10 IOUT (mV) –20 –30 –40 –50 –60 –70 0.0 0.5 1.0 1.5 VDDQ - VOUT (V) Table 23: Reduced Strength Pull-Up Current (mA) Voltage (V) PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Min Nom Max 0.0 0.00 0.00 0.00 0.1 –1.72 –2.98 –4.77 0.2 –3.44 –5.99 –9.54 0.3 –5.16 –8.75 –14.31 0.4 –6.76 –11.76 –19.08 0.5 –8.16 –14.62 –23.85 0.6 –9.31 –17.17 –28.62 0.7 –10.18 –19.32 –33.33 0.8 –10.72 –21.40 –37.77 0.9 –11.07 –23.32 –41.73 1.0 –11.35 –24.92 –45.21 1.1 –11.58 –26.30 –48.21 1.2 –11.78 –27.41 –50.73 1.3 –11.96 –28.26 –52.77 1.4 –12.12 –29.10 –54.42 1.5 –12.26 –29.69 –55.8 1.6 –12.39 –30.25 –57.03 1.7 –12.52 –30.82 –58.23 1.8 –12.66 –31.42 –59.43 1.9 –12.78 –31.98 –60.63 47 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Power and Ground Clamp Characteristics Power and Ground Clamp Characteristics Power and ground clamps are provided on the following input-only balls: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, ODT, and CKE. Table 24: Input Clamp Characteristics Voltage Across Clamp (V) Minimum Power Clamp Current (mA) Minimum Ground Clamp Current (mA) 0.0 0.0 0.0 0.1 0.0 0.0 0.2 0.0 0.0 0.3 0.0 0.0 0.4 0.0 0.0 0.5 0.0 0.0 0.6 0.0 0.0 0.7 0.0 0.0 0.8 0.1 0.1 0.9 1.0 1.0 1.0 2.5 2.5 1.1 4.7 4.7 1.2 6.8 6.8 1.3 9.1 9.1 1.4 11.0 11.0 1.5 13.5 13.5 1.6 16.0 16.0 1.7 18.2 18.2 1.8 21.0 21.0 Figure 19: Input Clamp Characteristics Minimum Clamp Current (mA) 25 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Voltage Across Clamp (V) PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM AC Overshoot/Undershoot Specification AC Overshoot/Undershoot Specification Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V maximum average amplitude shown in Table 25 and Table 26. Table 25: Address and Control Balls Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT Specification Parameter -187E -25/-25E -3/-3E -37E -5E Maximum peak amplitude allowed for overshoot area (see Figure 20) 0.50V 0.50V 0.50V 0.50V 0.50V Maximum peak amplitude allowed for undershoot area (see Figure 21) 0.50V 0.50V 0.50V 0.50V 0.50V Maximum overshoot area above VDD (see Figure 20) 0.5 Vns 0.66 Vns 0.80 Vns 1.00 Vns 1.33 Vns Maximum undershoot area below VSS (see Figure 21) 0.5 Vns 0.66 Vns 0.80 Vns 1.00 Vns 1.33 Vns Table 26: Clock, Data, Strobe, and Mask Balls Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM Specification Parameter -187E -25/-25E -3/-3E -37E -5E Maximum peak amplitude allowed for overshoot area (see Figure 20) 0.50V 0.50V 0.50V 0.50V 0.50V Maximum peak amplitude allowed for undershoot area (see Figure 21) 0.50V 0.50V 0.50V 0.50V 0.50V Maximum overshoot area above VDDQ (see Figure 20) 0.19 Vns 0.23 Vns 0.23 Vns 0.28 Vns 0.38 Vns Maximum undershoot area below VSSQ (see Figure 21) 0.19 Vns 0.23 Vns 0.23 Vns 0.28 Vns 0.38 Vns Figure 20: Overshoot Maximum amplitude Volts (V) Overshoot area VDD/VDDQ VSS/VSSQ Time (ns) Figure 21: Undershoot Volts (V) VSS/VSSQ Undershoot area Maximum amplitude Time (ns) PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM AC Overshoot/Undershoot Specification Table 27: AC Input Test Conditions Parameter Symbol Min Max Units Notes Input setup timing measurement reference level address balls, bank address balls, CS#, RAS#, CAS#, WE#, ODT, DM, UDM, LDM, and CKE VRS See Note 2 1, 2, 3, 4 Input hold timing measurement reference level address balls, bank address balls, CS#, RAS#, CAS#, WE#, ODT, DM, UDM, LDM, and CKE VRH See Note 5 1, 3, 4, 5 VREF(DC) VDDQ × 0.49 VDDQ × 0.51 V 1, 3, 4, 6 VRD VIX(AC) V 1, 3, 7, 8, 9 Input timing measurement reference level (single-ended) DQS for x4, x8; UDQS, LDQS for x16 Input timing measurement reference level (differential) CK, CK# for x4, x8, x16; DQS, DQS# for x4, x8; RDQS, RDQS# for x8; UDQS, UDQS#, LDQS, LDQS# for x16 Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. All voltages referenced to VSS. 2. Input waveform setup timing (tISb) is referenced from the input signal crossing at the VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test, as shown in Figure 30 (page 62). 3. See Input Slew Rate Derating (page 51). 4. The slew rate for single-ended inputs is measured from DC level to AC level, VIL(DC) to VIH(AC) on the rising edge and VIL(AC) to VIH(DC) on the falling edge. For signals referenced to VREF, the valid intersection is where the “tangent” line intersects VREF, as shown in Figure 23 (page 54), Figure 25 (page 55), Figure 27 (page 60), and Figure 29 (page 61). 5. Input waveform hold (tIHb) timing is referenced from the input signal crossing at the VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the device under test, as shown in Figure 30 (page 62). 6. Input waveform setup timing (tDS) and hold timing (tDH) for single-ended data strobe is referenced from the crossing of DQS, UDQS, or LDQS through the Vref level applied to the device under test, as shown in Figure 32 (page 63). 7. Input waveform setup timing (tDS) and hold timing (tDH) when differential data strobe is enabled is referenced from the cross-point of DQS/DQS#, UDQS/UDQS#, or LDQS/ LDQS#, as shown in Figure 31 (page 62). 8. Input waveform timing is referenced to the crossing point level (VIX) of two input signals (VTR and VCP) applied to the device under test, where VTR is the true input signal and VCP is the complementary input signal, as shown in Figure 33 (page 63). 9. The slew rate for differentially ended inputs is measured from twice the DC level to twice the AC level: 2 × VIL(DC) to 2 × VIH(AC) on the rising edge and 2 × VIL(AC) to 2 × VIH(DC) on the falling edge. For example, the CK/CK# would be –250mV to +500mV for CK rising edge and would be +250mV to –500mV for CK falling edge. 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Input Slew Rate Derating For all input signals, the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS (base) and tIH (base) value to the ΔtIS and ΔtIH derating value, respectively. Example: tIS (total setup time) = tIS (base) + ΔtIS. tIS, the nominal slew rate for a rising signal, is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min. Setup nominal slew rate (tIS) for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If the actual signal is always earlier than the nominal slew rate line between shaded “VREF(DC) to AC region,” use the nominal slew rate for the derating value (Figure 22 (page 54)). If the actual signal is later than the nominal slew rate line anywhere between the shaded “VREF(DC) to AC region,” the slew rate of a tangent line to the actual signal from the AC level to DC level is used for the derating value (see Figure 23 (page 54)). tIH, the nominal slew rate for a rising signal, is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC). tIH, nominal slew rate for a falling signal, is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If the actual signal is always later than the nominal slew rate line between shaded “DC to VREF(DC) region,” use the nominal slew rate for the derating value (Figure 24 (page 55)). If the actual signal is earlier than the nominal slew rate line anywhere between shaded “DC to VREF(DC) region,” the slew rate of a tangent line to the actual signal from the DC level to VREF(DC) level is used for the derating value (Figure 25 (page 55)). Although the total setup time might be negative for slow slew rates (a valid input signal will not have reached VIH[AC]/VIL[AC] at the time of the rising clock transition), a valid input signal is still required to complete the transition and reach VIH(AC)/VIL(AC). For slew rates in between the values listed in Table 28 (page 52) and Table 29 (page 53), the derating values may obtained by linear interpolation. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Table 28: DDR2-400/533 Setup and Hold Time Derating Values (tIS and tIH) CK, CK# Differential Slew Rate 2.0 V/ns 1.5 V/ns 1.0 V/ns Command/Address Slew Rate (V/ns) ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH Units PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 4.0 +187 +94 +217 +124 +247 +154 ps 3.5 +179 +89 +209 +119 +239 +149 ps 3.0 +167 +83 +197 +113 +227 +143 ps 2.5 +150 +75 +180 +105 +210 +135 ps 2.0 +125 +45 +155 +75 +185 +105 ps 1.5 +83 +21 +113 +51 +143 +81 ps 1.0 0 0 +30 +30 +60 +60 ps 0.9 –11 –14 +19 +16 +49 +46 ps 0.8 –25 –31 +5 –1 +35 +29 ps 0.7 –43 –54 –13 –24 +17 +6 ps 0.6 –67 –83 –37 –53 –7 –23 ps 0.5 –110 –125 –80 –95 –50 –65 ps 0.4 –175 –188 –145 –158 –115 –128 ps 0.3 –285 –292 –255 –262 –225 –232 ps 0.25 –350 –375 –320 –345 –290 –315 ps 0.2 –525 –500 –495 –470 –465 –440 ps 0.15 –800 –708 –770 –678 –740 –648 ps 0.1 –1,450 –1,125 –1,420 –1,095 –1,390 –1,065 ps 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Table 29: DDR2-667/800/1066 Setup and Hold Time Derating Values (tIS and tIH) Command/ Address Slew Rate (V/ns) CK, CK# Differential Slew Rate 2.0 V/ns 1.5 V/ns 1.0 V/ns ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH Units 4.0 +150 +94 +180 +124 +210 +154 ps 3.5 +143 +89 +173 +119 +203 +149 ps 3.0 +133 +83 +163 +113 +193 +143 ps 2.5 +120 +75 +150 +105 +180 +135 ps 2.0 +100 +45 +160 +75 +160 +105 ps 1.5 +67 +21 +97 +51 +127 +81 ps 1.0 0 0 +30 +30 +60 +60 ps 0.9 –5 –14 +25 +16 +55 +46 ps 0.8 –13 –31 +17 –1 +47 +29 ps 0.7 –22 –54 +8 –24 +38 +6 ps 0.6 –34 –83 –4 –53 +36 –23 ps 0.5 –60 –125 –30 –95 0 –65 ps 0.4 –100 –188 –70 –158 –40 –128 ps 0.3 –168 –292 –138 –262 –108 –232 ps 0.25 –200 –375 –170 –345 –140 –315 ps 0.2 –325 –500 –295 –470 –265 –440 ps 0.15 –517 –708 –487 –678 –457 –648 ps 0.1 –1,000 –1,125 –970 –1,095 –940 –1,065 ps PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Figure 22: Nominal Slew Rate for tIS CK CK# tIH tIS VDDQ tIS tIH VIH(AC)min VREF to AC region VIH(DC)min Nominal slew rate VREF(DC) Nominal slew rate VIL(DC)max VREF to AC region VIL(AC)max VSS ΔTF ΔTR VREF(DC) - VIL(AC)max Setup slew rate = falling signal ΔTF VIH(AC)min - VREF(DC) Setup slew rate = rising signal ΔTR Figure 23: Tangent Line for tIS CK CK# VIH(AC)min tIH tIS VDDQ VREF to AC region tIS tIH Nominal line VIH(DC)min Tangent line VREF(DC) Tangent line VIL(DC)max Nominal line VREF to AC region VIL(AC)max ΔTF ΔTR VSS Tangent line (VIH[AC]min - VREF[DC]) Setup slew rate = rising signal ΔTR PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Figure 24: Nominal Slew Rate for tIH CK CK# tIS VDDQ tIS tIH tIH VIH(AC)min VIH(DC)min DC to VREF region Nominal slew rate VREF(DC) Nominal slew rate DC to VREF region VIL(DC)max VIL(AC)max VSS ΔTF ΔTR Figure 25: Tangent Line for tIH CK CK# tIS VDDQ tIS tIH tIH VIH(AC)min Nominal line VIH(DC)min DC to VREF region Tangent line VREF(DC) Tangent line Nominal line VIL(DC)max DC to VREF region VIL(AC)max VSS ΔTR Tangent line (VREF[DC] - VIL[DC]max) Hold slew rate = rising signal ΔTR PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 55 ΔTF Hold slew rate Tangent line (VIH[DC]min - VREF[DC]) = falling signal ΔTF Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Table 30: DDR2-400/533 tDS, tDH Derating Values with Differential Strobe All units are shown in picoseconds DQS, DQS# Differential Slew Rate DQ Slew Rate (V/ns) tDS tDH tDS tDH tDS tDH 2.0 125 45 125 45 125 45 1.5 83 21 83 21 83 21 1.0 0 0 0 0 0 0 0.9 – – –11 –14 –11 0.8 – – – – 0.7 – – – 0.6 – – – 0.5 – – 0.4 – – 4.0 V/ns Δ Δ 3.0 V/ns Δ Δ Δ Δ 1.8 V/ns Δ tDS Δ 1.6 V/ns Δ Δ 1.4 V/ns Δ Δ 1.2 V/ns Δ Δ 1.0 V/ns Δ Δ 0.8 V/ns Δ Δ tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH – – – – – – – – – – – – 95 33 – – – – – – – – – – 12 12 24 24 – – – – – – – – –14 1 –2 13 10 25 22 – – – – – – –25 –31 –13 –19 –1 –7 11 5 23 17 – – – – – – – –31 –42 –19 –30 –7 –18 5 –6 17 6 – – – – – – – –43 –59 –31 –47 –19 –35 –7 –23 5 –11 – – – – – – – – –74 –89 –62 –77 –50 –65 –38 –53 – – – – – – – – – – Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 2.0 V/ns –127 –140 –115 –128 –103 –116 1. For all input signals, the total tDS and tDH required is calculated by adding the data sheet value to the derating value listed in Table 30. 2. tDS nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min. tDS nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If the actual signal is always earlier than the nominal slew rate line between the shaded “VREF(DC) to AC region,” use the nominal slew rate for the derating value (see Figure 26 (page 60)). If the actual signal is later than the nominal slew rate line anywhere between the shaded “VREF(DC) to AC region,” the slew rate of a tangent line to the actual signal from the AC level to DC level is used for the derating value (see Figure 27 (page 60)). 3. tDH nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC). tDH nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If the actual signal is always later than the nominal slew rate line between the shaded “DC level to VREF(DC) region,” use the nominal slew rate for the derating value (see Figure 28 (page 61)). If the actual signal is earlier than the nominal slew rate line anywhere between shaded “DC to VREF(DC) region,” the slew rate of a tangent line to the actual signal from the DC level to VREF(DC) level is used for the derating value (see Figure 29 (page 61)). 4. Although the total setup time might be negative for slow slew rates (a valid input signal will not have reached VIH[AC]/VIL[AC] at the time of the rising clock transition), a valid input signal is still required to complete the transition and reach VIH(AC)/VIL(AC). 5. For slew rates between the values listed in this table, the derating values may be obtained by linear interpolation. 6. These values are typically not subject to production test. They are verified by design and characterization. 7. Single-ended DQS requires special derating. The values in Table 32 (page 58) are the DQS single-ended slew rate derating with DQS referenced at VREF and DQ referenced at the logic levels tDSb and tDHb. Converting the derated base values from DQ referenced to the AC/DC trip points to DQ referenced to VREF is listed in Table 34 (page 59) and Table 35 (page 59). Table 34 provides the VREF-based fully derated values for the DQ (tDSa and tDHa) for DDR2-533. Table 35 provides the VREF-based fully derated values for the DQ (tDSa and tDHa) for DDR2-400. 56 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Table 31: DDR2-667/800/1066 tDS, tDH Derating Values with Differential Strobe All units are shown in picoseconds DQS, DQS# Differential Slew Rate DQ Slew Rate (V/ns) tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH 2.0 100 63 100 63 100 63 112 75 124 87 136 99 148 111 160 123 172 135 1.5 67 42 67 42 67 42 79 54 91 66 103 78 115 90 127 102 139 114 2.8 V/ns Δ Δ 2.4 V/ns Δ Δ 2.0 V/ns Δ Δ 1.8 V/ns Δ Δ 1.6 V/ns Δ 1.4 V/ns Δ Δ Δ 1.2 V/ns Δ Δ 1.0 V/ns Δ Δ 0.8 V/ns Δ Δ 1.0 0 0 0 0 0 0 12 12 24 24 36 36 48 48 60 60 72 72 0.9 –5 –14 –5 –14 –5 –14 7 –2 19 10 31 22 43 34 55 46 67 58 0.8 –13 –31 –13 –31 –13 –31 –1 –19 11 –7 23 5 35 17 47 29 59 41 0.7 –22 –54 –22 –54 –22 –54 –10 –42 2 –30 14 –18 26 –6 38 6 50 18 0.6 –34 –83 –34 –83 –34 –83 –22 –71 –10 –59 2 –47 14 –35 26 –23 38 –11 0.5 –60 –125 –60 –125 –60 –125 –48 –113 –36 –101 –24 –89 –12 –77 0 –65 12 –53 0.4 –100 –188 –100 –188 –100 –188 –88 –176 –76 –164 –64 –152 –52 –140 –40 –128 –28 –116 Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. For all input signals the total tDS and tDH required is calculated by adding the data sheet value to the derating value listed in Table 31. 2. tDS nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min. tDS nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If the actual signal is always earlier than the nominal slew rate line between the shaded “VREF(DC) to AC region,” use the nominal slew rate for the derating value (see Figure 26 (page 60)). If the actual signal is later than the nominal slew rate line anywhere between shaded “VREF(DC) to AC region,” the slew rate of a tangent line to the actual signal from the AC level to DC level is used for the derating value (see Figure 27 (page 60)). 3. tDH nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC). tDH nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If the actual signal is always later than the nominal slew rate line between the shaded “DC level to VREF(DC) region,” use the nominal slew rate for the derating value (see Figure 28 (page 61)). If the actual signal is earlier than the nominal slew rate line anywhere between the shaded “DC to VREF(DC) region,” the slew rate of a tangent line to the actual signal from the DC level to VREF(DC) level is used for the derating value (see Figure 29 (page 61)). 4. Although the total setup time might be negative for slow slew rates (a valid input signal will not have reached VIH[AC]/VIL[AC] at the time of the rising clock transition), a valid input signal is still required to complete the transition and reach VIH(AC)/VIL(AC). 5. For slew rates between the values listed in this table, the derating values may be obtained by linear interpolation. 6. These values are typically not subject to production test. They are verified by design and characterization. 7. Single-ended DQS requires special derating. The values in Table 32 (page 58) are the DQS single-ended slew rate derating with DQS referenced at VREF and DQ referenced at the logic levels tDSb and tDHb. Converting the derated base values from DQ referenced to the AC/DC trip points to DQ referenced to VREF is listed in Table 33 (page 58). Table 33 provides the VREF-based fully derated values for the DQ (tDSa and tDHa) for 57 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating DDR2-667. It is not advised to operate DDR2-800 and DDR2-1066 devices with singleended DQS; however, Table 32 would be used with the base values. Table 32: Single-Ended DQS Slew Rate Derating Values Using tDSb and tDHb Reference points indicated in bold; Derating values are to be used with base tDSb- and tDHb--specified values DQS Single-Ended Slew Rate Derated (at VREF) 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns 0.8 V/ns 0.6 V/ns 0.4 V/ns tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH 2.0 130 53 130 53 130 53 130 53 130 53 145 48 155 45 165 41 175 38 1.5 97 32 97 32 97 32 97 32 97 32 112 27 122 24 132 20 142 17 1.0 30 –10 30 –10 30 –10 30 –10 30 –10 45 –15 55 –18 65 –22 75 –25 0.9 25 –24 25 –24 25 –24 25 –24 25 –24 40 –29 50 –32 60 –36 70 –39 0.8 17 –41 17 –41 17 –41 17 –41 17 –41 32 –46 42 –49 52 –53 61 –56 0.7 5 –64 5 –64 5 –64 5 –64 5 –64 20 –69 30 –72 40 –75 50 –79 0.6 –7 –93 –7 –93 –7 –93 –7 –93 –7 –93 8 –98 18 –102 28 –105 38 –108 0.5 –28 –135 –28 –135 –28 –135 –28 –135 –28 –135 –13 –140 –3 –143 7 –147 17 –150 0.4 –78 –198 –78 –198 –78 –198 –78 –198 –78 –198 –63 –203 –53 –206 –43 –210 –33 –213 DQ (V/ns) Table 33: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-667 Reference points indicated in bold DQS Single-Ended Slew Rate Derated (at VREF) 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns 0.8 V/ns 0.6 V/ns DQ (V/ns) tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS 2.0 330 291 330 291 330 291 330 291 330 291 345 286 355 282 1.5 330 290 330 290 330 290 330 290 330 290 345 285 355 282 1.0 330 290 330 290 330 290 330 290 330 290 345 285 355 0.9 347 290 347 290 347 290 347 290 347 290 362 285 0.8 367 290 367 290 367 290 367 290 367 290 382 285 0.7 391 290 391 290 391 290 391 290 391 290 406 0.6 426 290 426 290 426 290 426 290 426 290 0.5 472 290 472 290 472 290 472 290 472 0.4 522 289 522 289 522 289 522 289 522 PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 58 0.4 V/ns tDH tDS tDH 365 29 375 276 365 279 375 275 282 365 278 375 275 372 282 382 278 392 275 392 282 402 278 412 275 285 416 281 426 278 436 275 441 285 451 282 461 278 471 275 290 487 285 497 282 507 278 517 275 289 537 284 547 281 557 278 567 274 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Table 34: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-533 Reference points indicated in bold DQS Single-Ended Slew Rate Derated (at VREF) 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns 0.8 V/ns 0.6 V/ns 0.4 V/ns DQ (V/ns) tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH 2.0 355 341 355 341 355 341 355 341 355 341 370 336 380 332 390 329 400 326 1.5 364 340 364 340 364 340 364 340 364 340 379 335 389 332 399 329 409 325 1.0 380 340 380 340 380 340 380 340 380 340 395 335 405 332 415 328 425 325 0.9 402 340 402 340 402 340 402 340 402 340 417 335 427 332 437 328 447 325 0.8 429 340 429 340 429 340 429 340 429 340 444 335 454 332 464 328 474 325 0.7 463 340 463 340 463 340 463 340 463 340 478 335 488 331 498 328 508 325 0.6 510 340 510 340 510 340 510 340 510 340 525 335 535 332 545 328 555 325 0.5 572 340 572 340 572 340 572 340 572 340 587 335 597 332 607 328 617 325 0.4 647 339 647 339 647 339 647 339 647 339 662 334 672 331 682 328 692 324 Table 35: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at VREF) at DDR2-400 Reference points indicated in bold DQS Single-Ended Slew Rate Derated (at VREF) 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns 0.8 V/ns 0.6 V/ns 0.4 V/ns DQ (V/ns) tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH 2.0 405 391 405 391 405 391 405 391 405 391 420 386 430 382 440 379 450 376 1.5 414 390 414 390 414 390 414 390 414 390 429 385 439 382 449 379 459 375 1.0 430 390 430 390 430 390 430 390 430 390 445 385 455 382 465 378 475 375 0.9 452 390 452 390 452 390 452 390 452 390 467 385 477 382 487 378 497 375 0.8 479 390 479 390 479 390 479 390 479 390 494 385 504 382 514 378 524 375 0.7 513 390 513 390 513 390 513 390 513 390 528 385 538 381 548 378 558 375 0.6 560 390 560 390 560 390 560 390 560 390 575 385 585 382 595 378 605 375 0.5 622 390 622 390 622 390 622 390 622 390 637 385 647 382 657 378 667 375 0.4 697 389 697 389 697 389 697 389 697 389 712 384 722 381 732 378 742 374 PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 59 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Figure 26: Nominal Slew Rate for tDS DQS1 DQS#1 tDS tDH tDS VDDQ VIH(AC)min tDH VREF to AC region VIH(DC)min Nominal slew rate VREF(DC) Nominal slew rate VIL(DC)max VREF to AC region VIL(AC)max VSS ΔTF ΔTR Setup slew rate = falling signal Note: VREF(DC) - VIL(AC)max VIH(AC)min - VREF(DC) Setup slew rate = rising signal ΔTR ΔTF 1. DQS, DQS# signals must be monotonic between VIL(DC)max and VIH(DC)min. Figure 27: Tangent Line for tDS DQS1 DQS#1 t DS VDDQ t t DH VIH(AC)min DS t DH Nominal line VREF to AC region VIH(DC)min Tangent line VREF(DC) Tangent line VIL(DC)max Nominal line VREF to AC region VIL(AC)max ΔTR ΔTF VSS Setup slew rate = falling signal Note: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Tangent line (VREF[DC] - VIL[AC]max) ΔTF Tangent line (VIH[AC]min - VREF[DC]) Setup slew rate = rising signal ΔTR 1. DQS, DQS# signals must be monotonic between VIL(DC)max and VIH(DC)min. 60 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Figure 28: Nominal Slew Rate for tDH DQS1 DQS#1 tIS VDDQ tIS tIH tIH VIH(AC)min VIH(DC)min DC to VREF region Nominal slew rate VREF(DC) Nominal slew rate DC to VREF region VIL(DC)max VIL(AC)max VSS ΔTF ΔTR Hold slew rate VIH(DC)min - VREF(DC) = falling signal ΔTF Hold slew rate VREF(DC) - VIL(DC)max = rising signal ΔTR Note: 1. DQS, DQS# signals must be monotonic between VIL(DC)max and VIH(DC)min. Figure 29: Tangent Line for tDH DQS1 DQS#1 tIS VDDQ tIS tIH tIH VIH(AC)min Nominal line VIH(DC)min DC to VREF region Tangent line VREF(DC) Tangent line Nominal line VIL(DC)max DC to VREF region VIL(AC)max VSS Hold slew rate = rising signal Note: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Tangent line (VREF[DC] - VIL[DC]max) ΔTR ΔTF ΔTR Hold slew rate Tangent line (VIH[DC]min - VREF[DC]) = falling signal ΔTF 1. DQS, DQS# signals must be monotonic between VIL(DC)max and VIH(DC)min. 61 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Figure 30: AC Input Test Signal Waveform Command/Address Balls CK# CK tIS b Logic levels tIS b tIH b tIH b VDDQ Vswing (MAX) VIH(AC)min VIH(DC)min VREF(DC) VIL(DC)min VIL(AC)min VSSQ VREF levels tIS a tIS a tIH a tIH a Figure 31: AC Input Test Signal Waveform for Data with DQS, DQS# (Differential) DQS# DQS tDS b tDH b tDS b tDH b Logic levels VDDQ Vswing (MAX) VIH(AC)min VIH(DC)min VREF(DC) VIL(DC)max VIL(AC)max VSSQ VREF levels PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN tDS a tDH a 62 tDS a tDH a Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Input Slew Rate Derating Figure 32: AC Input Test Signal Waveform for Data with DQS (Single-Ended) VREF DQS tDS b Logic levels tDH b tDS b tDH b VDDQ VIH(AC)min Vswing (MAX) VIH(DC)min VREF(DC) VIL(DC)max VIL(AC)max VSSQ VREF levels tDS a tDH a tDS a tDH a Figure 33: AC Input Test Signal Waveform (Differential) VDDQ VTR Crossing point Vswing VIX VCP VSSQ PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 63 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Commands Commands Truth Tables The following tables provide a quick reference of available DDR2 SDRAM commands, including CKE power-down modes and bank-to-bank commands. Table 36: Truth Table – DDR2 Commands Notes: 1–3 apply to the entire table CKE Previous Cycle Current Cycle CS# RAS# CAS# WE# LOAD MODE H H L L L L BA REFRESH H H L L L H X X X X SELF REFRESH entry H L L L L H X X X X SELF REFRESH exit L H H X X X X X X X 4, 7 L H H H 6 Function BA2– BA0 An–A11 A10 A9–A0 Notes OP code 4, 6 Single bank PRECHARGE H H L L H L BA X L X All banks PRECHARGE H H L L H L X X H X Bank ACTIVATE H H L L H H BA WRITE H H L H L L BA Column address L Column 4, 5, 6, address 8 WRITE with auto precharge H H L H L L BA Column address H Column 4, 5, 6, address 8 READ H H L H L H BA Column address L Column 4, 5, 6, address 8 READ with auto precharge H H L H L H BA Column address H Column 4, 5, 6, address 8 NO OPERATION H X L H H H X X X X Device DESELECT H X H X X X X X X X Power-down entry H L H X X X X X X X 9 L H H H Power-down exit L H H X X X X X X X 9 L H H H Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Row address 4 1. All DDR2 SDRAM commands are defined by states of CS#, RAS#, CAS#, WE#, and CKE at the rising edge of the clock. 2. The state of ODT does not affect the states described in this table. The ODT function is not available during self refresh. See ODT Timing (page 121) for details. 3. “X” means “H or L” (but a defined logic level) for valid IDD measurements. 4. BA2 is only applicable for densities ≥1Gb. 5. An n is the most significant address bit for a given density and configuration. Some larger address bits may be “Don’t Care” during column addressing, depending on density and configuration. 64 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Commands 6. Bank addresses (BA) determine which bank is to be operated upon. BA during a LOAD MODE command selects which mode register is programmed. 7. SELF REFRESH exit is asynchronous. 8. Burst reads or writes at BL = 4 cannot be terminated or interrupted. See Figure 47 (page 90) and Figure 59 (page 101) for other restrictions and details. 9. The power-down mode does not perform any REFRESH operations. The duration of powerdown is limited by the refresh requirements outlined in the AC parametric section. Table 37: Truth Table – Current State Bank n – Command to Bank n Notes: 1–6 apply to the entire table Current State CS# RAS# CAS# Any WE# Command/Action Notes H X X X DESELECT (NOP/continue previous operation) L H H H NO OPERATION (NOP/continue previous operation) L L H H ACTIVATE (select and activate row) L L L H REFRESH 7 L L L L LOAD MODE 7 L H L H READ (select column and start READ burst) 8 L H L L WRITE (select column and start WRITE burst) 8 L L H L PRECHARGE (deactivate row in bank or banks) 9 Read (auto precharge disabled) L H L H READ (select column and start new READ burst) 8 L H L L WRITE (select column and start WRITE burst) L L H L PRECHARGE (start PRECHARGE) 9 Write (auto precharge disabled) L H L H READ (select column and start READ burst) 8 L H L L WRITE (select column and start new WRITE burst) 8 L L H L PRECHARGE (start PRECHARGE) 9 Idle Row active Notes: 8, 10 1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH and after tXSNR has been met (if the previous state was self refresh). 2. This table is bank-specific, except where noted (the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when in that state). Exceptions are covered in the notes below. 3. Current state definitions: The bank has been precharged, tRP has been met, and any READ burst is complete. A row in the bank has been activated, and tRCD has been met. No data bursts/ Row active: accesses and no register accesses are in progress. Read: A READ burst has been initiated, with auto precharge disabled and has not yet terminated. Write: A WRITE burst has been initiated with auto precharge disabled and has not yet terminated. Idle: 4. The following states must not be interrupted by a command issued to the same bank. Issue DESELECT or NOP commands, or allowable commands to the other bank, on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and this table, and according to Table 38 (page 67). PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 65 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Commands Starts with registration of a PRECHARGE command and ends when tRP is met. After tRP is met, the bank will be in the idle state. Read with au- Starts with registration of a READ command with auto precharge enato precharge bled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. enabled: Row activate: Starts with registration of an ACTIVATE command and ends when tRCD is met. After tRCD is met, the bank will be in the row active state. Write with au- Starts with registration of a WRITE command with auto precharge enato precharge bled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. enabled: 5. The following states must not be interrupted by any executable command (DESELECT or NOP commands must be applied on each positive clock edge during these states): Precharge: Starts with registration of a REFRESH command and ends when tRFC is met. After tRFC is met, the DDR2 SDRAM will be in the all banks idle state. Starts with registration of the LOAD MODE command and ends when Accessing tMRD has been met. After tMRD is met, the DDR2 SDRAM will be in the mode all banks idle state. register: Precharge Starts with registration of a PRECHARGE ALL command and ends when tRP is met. After tRP is met, all banks will be in the idle state. all: All states and sequences not shown are illegal or reserved. Not bank-specific; requires that all banks are idle and bursts are not in progress. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. May or may not be bank-specific; if multiple banks are to be precharged, each must be in a valid state for precharging. A WRITE command may be applied after the completion of the READ burst. Refresh: 6. 7. 8. 9. 10. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 66 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Commands Table 38: Truth Table – Current State Bank n – Command to Bank m Notes: 1–6 apply to the entire table Current State CS# RAS# CAS# Any WE# Command/Action Notes H X X X DESELECT (NOP/continue previous operation) L H H H NO OPERATION (NOP/continue previous operation) Idle X X X X Any command otherwise allowed to bank m Row active, active, or precharge L L H H ACTIVATE (select and activate row) L H L H READ (select column and start READ burst) 7 L H L L WRITE (select column and start WRITE burst) 7 L L H L PRECHARGE L L H H ACTIVATE (select and activate row) L H L H READ (select column and start new READ burst) L H L L WRITE (select column and start WRITE burst) L L H L PRECHARGE L L H H ACTIVATE (select and activate row) L H L H READ (select column and start READ burst) L H L L WRITE (select column and start new WRITE burst) L L H L PRECHARGE L L H H ACTIVATE (select and activate row) L H L H READ (select column and start new READ burst) L H L L WRITE (select column and start WRITE burst) L L H L PRECHARGE L L H H ACTIVATE (select and activate row) L H L H READ (select column and start READ burst) L H L L WRITE (select column and start new WRITE burst) L L H L PRECHARGE Read (auto precharge disabled) Write (auto precharge disabled) Read (with auto precharge) Write (with auto precharge) Notes: 7, 9, 10 7 7 7, 8 7, 10 7 1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH and after tXSNR has been met (if the previous state was self refresh). 2. This table describes an alternate bank operation, except where noted (the current state is for bank n and the commands shown are those allowed to be issued to bank m, assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in the notes below. 3. Current state definitions: Idle: Row active: Read: Write: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 7 7, 8 The bank has been precharged, tRP has been met, and any READ burst is complete. A row in the bank has been activated and tRCD has been met. No data bursts/accesses and no register accesses are in progress. A READ burst has been initiated with auto precharge disabled and has not yet terminated. A WRITE burst has been initiated with auto precharge disabled and has not yet terminated. 67 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Commands READ with auto precharge enabled/ WRITE with auto precharge enabled: 4. 5. 6. 7. 8. 9. 10. The READ with auto precharge enabled or WRITE with auto precharge enabled states can each be broken into two parts: the access period and the precharge period. For READ with auto precharge, the precharge period is defined as if the same burst was executed with auto precharge disabled and then followed with the earliest possible PRECHARGE command that still accesses all of the data in the burst. For WRITE with auto precharge, the precharge period begins when tWR ends, with tWR measured as if auto precharge was disabled. The access period starts with registration of the command and ends where the precharge period (or tRP) begins. This device supports concurrent auto precharge such that when a READ with auto precharge is enabled or a WRITE with auto precharge is enabled, any command to other banks is allowed, as long as that command does not interrupt the read or write data transfer already in process. In either case, all other related limitations apply (contention between read data and write data must be avoided). The minimum delay from a READ or WRITE command with auto precharge enabled to a command to a different bank is summarized in Table 39 (page 68). REFRESH and LOAD MODE commands may only be issued when all banks are idle. Not used. All states and sequences not shown are illegal or reserved. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. A WRITE command may be applied after the completion of the READ burst. Requires appropriate DM. The number of clock cycles required to meet tWTR is either two or tWTR/tCK, whichever is greater. Table 39: Minimum Delay with Auto Precharge Enabled From Command (Bank n) WRITE with auto precharge READ with auto precharge Minimum Delay (with Concurrent Auto Precharge) To Command (Bank m) READ or READ with auto precharge (CL - 1) + (BL/2) + tWTR Units tCK WRITE or WRITE with auto precharge (BL/2) tCK PRECHARGE or ACTIVATE 1 tCK READ or READ with auto precharge (BL/2) tCK WRITE or WRITE with auto precharge (BL/2) + 2 tCK PRECHARGE or ACTIVATE 1 tCK DESELECT The DESELECT function (CS# HIGH) prevents new commands from being executed by the DDR2 SDRAM. The DDR2 SDRAM is effectively deselected. Operations already in progress are not affected. DESELECT is also referred to as COMMAND INHIBIT. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 68 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Commands NO OPERATION (NOP) The NO OPERATION (NOP) command is used to instruct the selected DDR2 SDRAM to perform a NOP (CS# is LOW; RAS#, CAS#, and WE are HIGH). This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. LOAD MODE (LM) The mode registers are loaded via bank address and address inputs. The bank address balls determine which mode register will be programmed. See Mode Register (MR) (page 70). The LM command can only be issued when all banks are idle, and a subsequent executable command cannot be issued until tMRD is met. ACTIVATE The ACTIVATE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the bank address inputs determines the bank, and the address inputs select the row. This row remains active (or open) for accesses until a precharge command is issued to that bank. A precharge command must be issued before opening a different row in the same bank. READ The READ command is used to initiate a burst read access to an active row. The value on the bank address inputs determine the bank, and the address provided on address inputs A0–Ai (where Ai is the most significant column address bit for a given configuration) selects the starting column location. The value on input A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the read burst; if auto precharge is not selected, the row will remain open for subsequent accesses. DDR2 SDRAM also supports the AL feature, which allows a READ or WRITE command to be issued prior to tRCD (MIN) by delaying the actual registration of the READ/WRITE command to the internal device by AL clock cycles. WRITE The WRITE command is used to initiate a burst write access to an active row. The value on the bank select inputs selects the bank, and the address provided on inputs A0–Ai (where Ai is the most significant column address bit for a given configuration) selects the starting column location. The value on input A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the WRITE burst; if auto precharge is not selected, the row will remain open for subsequent accesses. DDR2 SDRAM also supports the AL feature, which allows a READ or WRITE command to be issued prior to tRCD (MIN) by delaying the actual registration of the READ/WRITE command to the internal device by AL clock cycles. Input data appearing on the DQ is written to the memory array subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered LOW, the corresponding data will be written to memory; if the DM signal is registered HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location (see Figure 64 (page 106)). PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 69 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Mode Register (MR) PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row activation a specified time (tRP) after the PRECHARGE command is issued, except in the case of concurrent auto precharge, where a READ or WRITE command to a different bank is allowed as long as it does not interrupt the data transfer in the current bank and does not violate any other timing parameters. After a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command is allowed if there is no open row in that bank (idle state) or if the previously open row is already in the process of precharging. However, the precharge period will be determined by the last PRECHARGE command issued to the bank. REFRESH REFRESH is used during normal operation of the DDR2 SDRAM and is analogous to CAS#before-RAS# (CBR) REFRESH. All banks must be in the idle mode prior to issuing a REFRESH command. This command is nonpersistent, so it must be issued each time a refresh is required. The addressing is generated by the internal refresh controller. This makes the address bits a “Don’t Care” during a REFRESH command. SELF REFRESH The SELF REFRESH command can be used to retain data in the DDR2 SDRAM, even if the rest of the system is powered down. When in the self refresh mode, the DDR2 SDRAM retains data without external clocking. All power supply inputs (including Vref) must be maintained at valid levels upon entry/exit and during SELF REFRESH operation. The SELF REFRESH command is initiated like a REFRESH command except CKE is LOW. The DLL is automatically disabled upon entering self refresh and is automatically enabled upon exiting self refresh. Mode Register (MR) The mode register is used to define the specific mode of operation of the DDR2 SDRAM. This definition includes the selection of a burst length, burst type, CAS latency, operating mode, DLL RESET, write recovery, and power-down mode, as shown in Figure 34 (page 71). Contents of the mode register can be altered by re-executing the LOAD MODE (LM) command. If the user chooses to modify only a subset of the MR variables, all variables must be programmed when the command is issued. The MR is programmed via the LM command and will retain the stored information until it is programmed again or until the device loses power (except for bit M8, which is self-clearing). Reprogramming the mode register will not alter the contents of the memory array, provided it is performed correctly. The LM command can only be issued (or reissued) when all banks are in the precharged state (idle state) and no bursts are in progress. The controller must wait the specified time tMRD before initiating any subsequent operations such as an ACTIVATE command. Violating either of these requirements will result in an unspecified operation. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 70 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Mode Register (MR) Burst Length Burst length is defined by bits M0–M2, as shown in Figure 34. Read and write accesses to the DDR2 SDRAM are burst-oriented, with the burst length being programmable to either four or eight. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A2–Ai when BL = 4 and by A3–Ai when BL = 8 (where Ai is the most significant column address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. The programmed burst length applies to both read and write bursts. Figure 34: MR Definition 1 2 BA2 BA1 BA0 An A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus 16 15 14 n 12 11 10 0 MR WR 0 PD Mode Register (Mx) 9 8 M12 PD Mode 0 Fast exit (normal) 1 Slow exit (low power) M11 M10 M9 M15 M14 Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 7 6 5 4 3 2 1 0 DLL TM CAS# Latency BT Burst Length M2 M1 M0 Burst Length M7 Mode 0 Normal 0 0 0 Reserved 1 0 0 1 Reserved 0 1 0 4 0 1 1 8 Test M8 DLL Reset 0 No 1 0 0 Reserved 1 Yes 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved Write Recovery 0 0 0 Reserved 0 0 1 2 M3 0 1 0 3 0 Sequential 0 1 1 4 1 Interleaved 1 0 0 5 1 0 1 6 1 1 0 7 1 1 1 8 Mode Register Definition 0 0 Mode register (MR) 0 1 Extended mode register (EMR) 1 0 Extended mode register (EMR2) 1 1 Extended mode register (EMR3) M6 M5 M4 Burst Type CAS Latency (CL) 0 0 0 Reserved 0 0 1 Reserved 0 1 0 Reserved 0 1 1 3 1 0 0 4 1 0 1 5 1 1 0 6 1 1 1 7 1. M16 (BA2) is only applicable for densities ≥1Gb, reserved for future use, and must be programmed to “0.” 2. Mode bits (Mn) with corresponding address balls (An) greater than M12 (A12) are reserved for future use and must be programmed to “0.” 3. Not all listed WR and CL options are supported in any individual speed grade. 71 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Mode Register (MR) Burst Type Accesses within a given burst may be programmed to be either sequential or interleaved. The burst type is selected via bit M3, as shown in Figure 34. The ordering of accesses within a burst is determined by the burst length, the burst type, and the starting column address, as shown in Table 40. DDR2 SDRAM supports 4-bit burst mode and 8-bit burst mode only. For 8-bit burst mode, full interleaved address ordering is supported; however, sequential address ordering is nibble-based. Table 40: Burst Definition Burst Length Starting Column Address (A2, A1, A0) Burst Type = Sequential Burst Type = Interleaved 00 0, 1, 2, 3 0, 1, 2, 3 01 1, 2, 3, 0 1, 0, 3, 2 10 2, 3, 0, 1 2, 3, 0, 1 11 3, 0, 1, 2 3, 2, 1, 0 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 001 1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6 010 2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5 011 3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4 100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 101 5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2 110 6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1 111 7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0 4 8 Order of Accesses Within a Burst Operating Mode The normal operating mode is selected by issuing a command with bit M7 set to “0,” and all other bits set to the desired values, as shown in Figure 34 (page 71). When bit M7 is “1,” no other bits of the mode register are programmed. Programming bit M7 to “1” places the DDR2 SDRAM into a test mode that is only used by the manufacturer and should not be used. No operation or functionality is guaranteed if M7 bit is “1.” DLL RESET DLL RESET is defined by bit M8, as shown in Figure 34. Programming bit M8 to “1” will activate the DLL RESET function. Bit M8 is self-clearing, meaning it returns back to a value of “0” after the DLL RESET function has been issued. Anytime the DLL RESET function is used, 200 clock cycles must occur before a READ command can be issued to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a violation of the tAC or tDQSCK parameters. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 72 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Mode Register (MR) Write Recovery Write recovery (WR) time is defined by bits M9–M11, as shown in Figure 34 (page 71). The WR register is used by the DDR2 SDRAM during WRITE with auto precharge operation. During WRITE with auto precharge operation, the DDR2 SDRAM delays the internal auto precharge operation by WR clocks (programmed in bits M9–M11) from the last data burst. An example of WRITE with auto precharge is shown in Figure 63 (page 105). WR values of 2, 3, 4, 5, 6, 7, or 8 clocks may be used for programming bits M9–M11. The user is required to program the value of WR, which is calculated by dividing tWR (in nanoseconds) by tCK (in nanoseconds) and rounding up a noninteger value to the next integer; WR (cycles) = tWR (ns)/tCK (ns). Reserved states should not be used as an unknown operation or incompatibility with future versions may result. Power-Down Mode Active power-down (PD) mode is defined by bit M12, as shown in Figure 34. PD mode enables the user to determine the active power-down mode, which determines performance versus power savings. PD mode bit M12 does not apply to precharge PD mode. When bit M12 = 0, standard active PD mode, or “fast-exit” active PD mode, is enabled. The tXARD parameter is used for fast-exit active PD exit timing. The DLL is expected to be enabled and running during this mode. When bit M12 = 1, a lower-power active PD mode, or “slow-exit” active PD mode, is enabled. The tXARDS parameter is used for slow-exit active PD exit timing. The DLL can be enabled but “frozen” during active PD mode because the exit-to-READ command timing is relaxed. The power difference expected between IDD3P normal and IDD3P lowpower mode is defined in the DDR2 IDD Specifications and Conditions table. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 73 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Mode Register (MR) CAS Latency (CL) The CAS latency (CL) is defined by bits M4–M6, as shown in Figure 34 (page 71). CL is the delay, in clock cycles, between the registration of a READ command and the availability of the first bit of output data. The CL can be set to 3, 4, 5, 6, or 7 clocks, depending on the speed grade option being used. DDR2 SDRAM does not support any half-clock latencies. Reserved states should not be used as an unknown operation otherwise incompatibility with future versions may result. DDR2 SDRAM also supports a feature called posted CAS additive latency (AL). This feature allows the READ command to be issued prior to tRCD (MIN) by delaying the internal command to the DDR2 SDRAM by AL clocks. The AL feature is described in further detail in Posted CAS Additive Latency (AL) (page 77). Examples of CL = 3 and CL = 4 are shown in Figure 35; both assume AL = 0. If a READ command is registered at clock edge n, and the CL is m clocks, the data will be available nominally coincident with clock edge n + m (this assumes AL = 0). Figure 35: CL CK# T0 T1 T2 T3 T4 T5 T6 READ NOP NOP NOP NOP NOP NOP CK Command DQS, DQS# DO n DQ DO n+1 DO n+2 DO n+3 CL = 3 (AL = 0) CK# T0 T1 T2 T3 T4 T5 T6 READ NOP NOP NOP NOP NOP NOP CK Command DQS, DQS# DO n DQ DO n+1 DO n+2 DO n+3 CL = 4 (AL = 0) Transitioning data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t care 1. BL = 4. 2. Posted CAS# additive latency (AL) = 0. 3. Shown with nominal tAC, tDQSCK, and tDQSQ. 74 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Extended Mode Register (EMR) Extended Mode Register (EMR) The extended mode register controls functions beyond those controlled by the mode register; these additional functions are DLL enable/disable, output drive strength, ondie termination (ODT), posted AL, off-chip driver impedance calibration (OCD), DQS# enable/disable, RDQS/RDQS# enable/disable, and output disable/enable. These functions are controlled via the bits shown in Figure 36. The EMR is programmed via the LM command and will retain the stored information until it is programmed again or the device loses power. Reprogramming the EMR will not alter the contents of the memory array, provided it is performed correctly. The EMR must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time tMRD before initiating any subsequent operation. Violating either of these requirements could result in an unspecified operation. Figure 36: EMR Definition 1 2 BA2 BA1 BA0 An A12 16 0 A10 A9 A8 A7 A6 A5 A4 A3 A2 15 14 n 12 11 10 9 8 7 6 5 4 3 2 1 0 MRS 0 Out RDQS DQS# OCD Program RTT Posted CAS# RTT ODS DLL Extended mode register (Ex) Outputs E0 DLL Enable 0 Enabled E6 E2 RTT (Nominal) 0 Enable (normal) 1 Disabled 0 0 RTT disabled 1 Disable (test/debug) 0 1 75Ω 1 0 150Ω E1 1 1 50Ω 0 Full 1 Reduced 0 No 1 Yes E10 DQS# Enable E15 E14 Output Drive Strength 3 E5 E4 E3 Posted CAS# Additive Latency (AL) 0 Enable 0 0 0 0 1 Disable 0 0 1 1 0 1 0 2 0 1 1 3 1 0 0 4 1 0 1 5 1 1 0 6 1 1 1 Reserved 4 E9 E8 E7 OCD Operation PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Address bus E12 E11 RDQS Enable Notes: A1 A0 0 0 0 OCD exit 0 0 1 Reserved 0 1 0 Reserved 1 0 0 Reserved 1 1 1 Enable OCD defaults Mode Register Set 0 0 Mode register (MR) 0 1 Extended mode register (EMR) 1 0 Extended mode register (EMR2) 1 1 Extended mode register (EMR3) 1. E16 (BA2) is only applicable for densities ≥1Gb, reserved for future use, and must be programmed to “0.” 2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are reserved for future use and must be programmed to “0.” 3. Not all listed AL options are supported in any individual speed grade. 4. As detailed in the Initialization (page 81) section notes, during initialization of the OCD operation, all three bits must be set to “1” for the OCD default state, then set to “0” before initialization is finished. 75 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Extended Mode Register (EMR) DLL Enable/Disable The DLL may be enabled or disabled by programming bit E0 during the LM command, as shown in Figure 36 (page 75). These specifications are applicable when the DLL is enabled for normal operation. DLL enable is required during power-up initialization and upon returning to normal operation after having disabled the DLL for the purpose of debugging or evaluation. Enabling the DLL should always be followed by resetting the DLL using the LM command. The DLL is automatically disabled when entering SELF REFRESH operation and is automatically re-enabled and reset upon exit of SELF REFRESH operation. Anytime the DLL is enabled (and subsequently reset), 200 clock cycles must occur before a READ command can be issued to allow time for the internal clock to synchronize with the external clock. Failing to wait for synchronization to occur may result in a violation of the tAC or tDQSCK parameters. Anytime the DLL is disabled and the device is operated below 25 MHz, any AUTO REFRESH command should be followed by a PRECHARGE ALL command. Output Drive Strength The output drive strength is defined by bit E1, as shown in Figure 36. The normal drive strength for all outputs is specified to be SSTL_18. Programming bit E1 = 0 selects normal (full strength) drive strength for all outputs. Selecting a reduced drive strength option (E1 = 1) will reduce all outputs to approximately 45 to 60 percent of the SSTL_18 drive strength. This option is intended for the support of lighter load and/or point-topoint environments. DQS# Enable/Disable The DQS# ball is enabled by bit E10. When E10 = 0, DQS# is the complement of the differential data strobe pair DQS/DQS#. When disabled (E10 = 1), DQS is used in a singleended mode and the DQS# ball is disabled. When disabled, DQS# should be left floating; however, it may be tied to ground via a 20Ω to 10kΩ resistor. This function is also used to enable/disable RDQS#. If RDQS is enabled (E11 = 1) and DQS# is enabled (E10 = 0), then both DQS# and RDQS# will be enabled. RDQS Enable/Disable The RDQS ball is enabled by bit E11, as shown in Figure 36. This feature is only applicable to the x8 configuration. When enabled (E11 = 1), RDQS is identical in function and timing to data strobe DQS during a READ. During a WRITE operation, RDQS is ignored by the DDR2 SDRAM. Output Enable/Disable The OUTPUT ENABLE function is defined by bit E12, as shown in Figure 36. When enabled (E12 = 0), all outputs (DQ, DQS, DQS#, RDQS, RDQS#) function normally. When disabled (E12 = 1), all outputs (DQ, DQS, DQS#, RDQS, RDQS#) are disabled, thus removing output buffer current. The output disable feature is intended to be used during IDD characterization of read current. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 76 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Extended Mode Register (EMR) On-Die Termination (ODT) ODT effective resistance, RTT(EFF), is defined by bits E2 and E6 of the EMR, as shown in Figure 36 (page 75). The ODT feature is designed to improve signal integrity of the memory channel by allowing the DDR2 SDRAM controller to independently turn on/off ODT for any or all devices. RTT effective resistance values of 50Ω, 75Ω, and 150Ω are selectable and apply to each DQ, DQS/DQS#, RDQS/RDQS#, UDQS/UDQS#, LDQS/LDQS#, DM, and UDM/LDM signals. Bits (E6, E2) determine what ODT resistance is enabled by turning on/off “sw1,” “sw2,” or “sw3.” The ODT effective resistance value is selected by enabling switch “sw1,” which enables all R1 values that are 150Ω each, enabling an effective resistance of 75Ω (RTT2 [EFF] = R2/2). Similarly, if “sw2” is enabled, all R2 values that are 300Ω each, enable an effective ODT resistance of 150Ω (RTT2[EFF] = R2/2). Switch “sw3” enables R1 values of 100Ω, enabling effective resistance of 50Ω. Reserved states should not be used, as an unknown operation or incompatibility with future versions may result. The ODT control ball is used to determine when RTT(EFF) is turned on and off, assuming ODT has been enabled via bits E2 and E6 of the EMR. The ODT feature and ODT input ball are only used during active, active power-down (both fast-exit and slow-exit modes), and precharge power-down modes of operation. ODT must be turned off prior to entering self refresh mode. During power-up and initialization of the DDR2 SDRAM, ODT should be disabled until the EMR command is issued. This will enable the ODT feature, at which point the ODT ball will determine the RTT(EFF) value. Anytime the EMR enables the ODT function, ODT may not be driven HIGH until eight clocks after the EMR has been enabled (see Figure 79 (page 122) for ODT timing diagrams). Off-Chip Driver (OCD) Impedance Calibration The OFF-CHIP DRIVER function is an optional DDR2 JEDEC feature not supported by Micron and thereby must be set to the default state. Enabling OCD beyond the default settings will alter the I/O drive characteristics and the timing and output I/O specifications will no longer be valid (see Initialization (page 81) for proper setting of OCD defaults). Posted CAS Additive Latency (AL) Posted CAS additive latency (AL) is supported to make the command and data bus efficient for sustainable bandwidths in DDR2 SDRAM. Bits E3–E5 define the value of AL, as shown in Figure 36. Bits E3–E5 allow the user to program the DDR2 SDRAM with an AL of 0, 1, 2, 3, 4, 5, or 6 clocks. Reserved states should not be used as an unknown operation or incompatibility with future versions may result. In this operation, the DDR2 SDRAM allows a READ or WRITE command to be issued prior to tRCD (MIN) with the requirement that AL ≤ tRCD (MIN). A typical application using this feature would set AL = tRCD (MIN) - 1 × tCK. The READ or WRITE command is held for the time of the AL before it is issued internally to the DDR2 SDRAM device. RL is controlled by the sum of AL and CL; RL = AL + CL. WRITE latency (WL) is equal to RL minus one clock; WL = AL + CL - 1 × tCK. An example of RL is shown in Figure 37 (page 78). An example of a WL is shown in Figure 38 (page 78). PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 77 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Extended Mode Register (EMR) Figure 37: READ Latency CK# T0 T1 T2 T3 T4 T5 T6 T7 T8 ACTIVE n READ n NOP NOP NOP NOP NOP NOP NOP CK Command DQS, DQS# tRCD (MIN) DQ AL = 2 DO n CL = 3 DO n+1 DO n+2 DO n+3 RL = 5 Transitioning Data Don’t Care 1. BL = 4. 2. Shown with nominal tAC, tDQSCK, and tDQSQ. 3. RL = AL + CL = 5. Notes: Figure 38: WRITE Latency CK# T0 T1 ACTIVE n WRITE n T2 T3 T4 T5 T6 T7 NOP NOP NOP NOP NOP NOP CK Command tRCD (MIN) DQS, DQS# AL = 2 CL - 1 = 2 DI n DQ DI n+1 DI n+2 DI n+3 WL = AL + CL - 1 = 4 Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. BL = 4. 2. CL = 3. 3. WL = AL + CL - 1 = 4. 78 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Extended Mode Register 2 (EMR2) Extended Mode Register 2 (EMR2) The extended mode register 2 (EMR2) controls functions beyond those controlled by the mode register. Currently all bits in EMR2 are reserved, except for E7, which is used in commercial or high-temperature operations, as shown in Figure 39. The EMR2 is programmed via the LM command and will retain the stored information until it is programmed again or until the device loses power. Reprogramming the EMR will not alter the contents of the memory array, provided it is performed correctly. Bit E7 (A7) must be programmed as “1” to provide a faster refresh rate on IT and AT devices if TC exceeds 85°C. EMR2 must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time tMRD before initiating any subsequent operation. Violating either of these requirements could result in an unspecified operation. Figure 39: EMR2 Definition 1 2 BA2 BA1 BA0 An A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 16 0 E15 E14 Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 15 14 n MRS 0 12 11 0 0 10 9 8 7 6 0 0 SRT 0 0 5 4 3 2 0 0 0 0 A1 A0 1 0 0 0 Mode Register Set E7 SRT Enable Mode register (MR) 0 1X refresh rate (0°C to 85°C) 1 Extended mode register (EMR) 1 2X refresh rate (>85°C) 0 Extended mode register (EMR2) 1 Extended mode register (EMR3) 0 0 0 1 1 Address bus Extended mode register (Ex) 1. E16 (BA2) is only applicable for densities ≥1Gb, reserved for future use, and must be programmed to “0.” 2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are reserved for future use and must be programmed to “0.” 79 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Extended Mode Register 3 (EMR3) Extended Mode Register 3 (EMR3) The extended mode register 3 (EMR3) controls functions beyond those controlled by the mode register. Currently all bits in EMR3 are reserved, as shown in Figure 40. The EMR3 is programmed via the LM command and will retain the stored information until it is programmed again or until the device loses power. Reprogramming the EMR will not alter the contents of the memory array, provided it is performed correctly. EMR3 must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time tMRD before initiating any subsequent operation. Violating either of these requirements could result in an unspecified operation. Figure 40: EMR3 Definition 1 2 BA2 BA1 BA0 An A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 16 15 14 n 12 11 10 0 MRS 0 0 E15 E14 Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 0 0 9 0 8 0 7 0 6 0 5 0 4 0 3 0 2 0 A1 A0 1 0 0 0 Address bus Extended mode register (Ex) Mode Register Set 0 0 Mode register (MR) 0 1 Extended mode register (EMR) 1 0 Extended mode register (EMR2) 1 1 Extended mode register (EMR3) 1. E16 (BA2) is only applicable for densities ≥1Gb, is reserved for future use, and must be programmed to “0.” 2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are reserved for future use and must be programmed to “0.” 80 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Initialization Figure 41: DDR2 Power-Up and Initialization DDR2 SDRAM must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. Figure 41 illustrates, and the notes outline, the sequence required for power-up and initialization. VDD VDDL VDDQ tVTD1 VTT1 VREF T0 tCK CK# CK tCL LVCMOS CKE low level2 Ta0 Tb0 Tc0 Td0 Te0 Tf0 Tg0 Th0 Ti0 Tj0 Tk0 Tl0 Tm0 NOP3 PRE LM5 LM6 LM7 LM8 PRE9 REF10 REF10 LM11 LM12 LM13 Valid14 A10 = 1 Code Code Code Code A10 = 1 Code Code Code Valid tCL SSTL_18 2 low level ODT 81 Command 15 DM 15 High-Z 15 High-Z DQS DQ Rtt High-Z T = 200µs (MIN)3 Power-up: VDD and stable clock (CK, CK#) T = 400ns (MIN)4 tRPA tMRD EMR(2) tMRD EMR(3) tMRD tMRD tRPA tRFC tRFC tMRD tMRD tMRD See no te 10 EMR MR without DLL RESET EMR with OCD default EMR with OCD exit 200 cycles of CK are required before a READ command can be issued Normal operation MR with DLL RESET Indicates a Break in Time Scale Don’t care 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Initialization Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 16 Address 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Initialization Notes: 1. Applying power; if CKE is maintained below 0.2 × VDDQ, outputs remain disabled. To guarantee RTT (ODT resistance) is off, VREF must be valid and a low level must be applied to the ODT ball (all other inputs may be undefined; I/Os and outputs must be less than VDDQ during voltage ramp time to avoid DDR2 SDRAM device latch-up). VTT is not applied directly to the device; however, tVTD should be ≥0 to avoid device latch-up. At least one of the following two sets of conditions (A or B) must be met to obtain a stable supply state (stable supply defined as VDD, VDDL, VDDQ, VREF, and VTT are between their minimum and maximum values as stated in (page 0 )): A. Single power source: The VDD voltage ramp from 300mV to VDD,min must take no longer than 200ms; during the VDD voltage ramp, |VDD - VDDQ| ≤ 0.3V. Once supply voltage ramping is complete (when VDDQ crosses VDD,min), specifications apply. • VDD, VDDL, and VDDQ are driven from a single power converter output • VTT is limited to 0.95V MAX • VREF tracks VDDQ/2; VREF must be within ±0.3V with respect to VDDQ/2 during supply ramp time; does not need to be satisfied when ramping power down • VDDQ ≥ VREF at all times B. Multiple power sources: VDD ≥ VDDL ≥ VDDQ must be maintained during supply voltage ramping, for both AC and DC levels, until supply voltage ramping completes (VDDQ crosses VDD,min). Once supply voltage ramping is complete, specifications apply. 2. 3. 4. 5. 6. 7. 8. 9. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN • Apply VDD and VDDL before or at the same time as VDDQ; VDD/VDDL voltage ramp time must be ≤ 200ms from when VDD ramps from 300mV to VDD,min • Apply VDDQ before or at the same time as VTT; the VDDQ voltage ramp time from when VDD,min is achieved to when VDDQ,min is achieved must be ≤ 500ms; while VDD is ramping, current can be supplied from VDD through the device to VDDQ • VREF must track VDDQ/2; VREF must be within ±0.3V with respect to VDDQ/2 during supply ramp time; VDDQ ≥ VREF must be met at all times; does not need to be satisfied when ramping power down • Apply VTT; the VTT voltage ramp time from when VDDQ,min is achieved to when VTT,min is achieved must be no greater than 500ms CKE requires LVCMOS input levels prior to state T0 to ensure DQs are High-Z during device power-up prior to VREF being stable. After state T0, CKE is required to have SSTL_18 input levels. Once CKE transitions to a high level, it must stay HIGH for the duration of the initialization sequence. For a minimum of 200µs after stable power and clock (CK, CK#), apply NOP or DESELECT commands, then take CKE HIGH. Wait a minimum of 400ns then issue a PRECHARGE ALL command. Issue a LOAD MODE command to the EMR(2). To issue an EMR(2) command, provide LOW to BA0, and provide HIGH to BA1; set register E7 to “0” or “1” to select appropriate self refresh rate; remaining EMR(2) bits must be “0” (see Extended Mode Register 2 (EMR2) (page 79) for all EMR(2) requirements). Issue a LOAD MODE command to the EMR(3). To issue an EMR(3) command, provide HIGH to BA0 and BA1; remaining EMR(3) bits must be “0.” Extended Mode Register 3 (EMR3) for all EMR(3) requirements. Issue a LOAD MODE command to the EMR to enable DLL. To issue a DLL ENABLE command, provide LOW to BA1 and A0; provide HIGH to BA0; bits E7, E8, and E9 can be set to “0” or “1;” Micron recommends setting them to “0;” remaining EMR bits must be “0.” Extended Mode Register (EMR) (page 75) for all EMR requirements. Issue a LOAD MODE command to the MR for DLL RESET. 200 cycles of clock input is required to lock the DLL. To issue a DLL RESET, provide HIGH to A8 and provide LOW to BA1 and BA0; CKE must be HIGH the entire time the DLL is resetting; remaining MR bits must be “0.” Mode Register (MR) (page 70) for all MR requirements. Issue PRECHARGE ALL command. 82 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Initialization 10. Issue two or more REFRESH commands. 11. Issue a LOAD MODE command to the MR with LOW to A8 to initialize device operation (that is, to program operating parameters without resetting the DLL). To access the MR, set BA0 and BA1 LOW; remaining MR bits must be set to desired settings. Mode Register (MR) (page 70) for all MR requirements. 12. Issue a LOAD MODE command to the EMR to enable OCD default by setting bits E7, E8, and E9 to “1,” and then setting all other desired parameters. To access the EMR, set BA0 HIGH and BA1 LOW (see Extended Mode Register (EMR) (page 75) for all EMR requirements. 13. Issue a LOAD MODE command to the EMR to enable OCD exit by setting bits E7, E8, and E9 to “0,” and then setting all other desired parameters. To access the extended mode registers, EMR, set BA0 HIGH and BA1 LOW for all EMR requirements. 14. The DDR2 SDRAM is now initialized and ready for normal operation 200 clock cycles after the DLL RESET at Tf0. 15. DM represents DM for the x4, x8 configurations and UDM, LDM for the x16 configuration; DQS represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, RDQS# for the appropriate configuration (x4, x8, x16); DQ represents DQ0–DQ3 for x4, DQ–DQ7 for x8 and DQ0–DQ15 for x16. 16. A10 = PRECHARGE ALL, CODE = desired values for mode registers (bank addresses are required to be decoded). PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 83 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM ACTIVATE ACTIVATE Before any READ or WRITE commands can be issued to a bank within the DDR2 SDRAM, a row in that bank must be opened (activated), even when additive latency is used. This is accomplished via the ACTIVATE command, which selects both the bank and the row to be activated. After a row is opened with an ACTIVATE command, a READ or WRITE command may be issued to that row subject to the tRCD specification. tRCD (MIN) should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the ACTIVATE command on which a READ or WRITE command can be entered. The same procedure is used to convert other specification limits from time units to clock cycles. For example, a tRCD (MIN) specification of 20ns with a 266 MHz clock (tCK = 3.75ns) results in 5.3 clocks, rounded up to 6. This is shown in Figure 42, which covers any case where 5 < tRCD (MIN)/tCK ≤ 6. Figure 42 also shows the case for tRRD where 2 < tRRD (MIN)/tCK ≤ 3. Figure 42: Example: Meeting tRRD (MIN) and tRCD (MIN) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Command ACT NOP NOP ACT NOP NOP NOP NOP NOP RD/WR Address Row CK# CK Bank address Row Bank x Bank y tRRD Row Col Bank z Bank y tRRD tRCD Don’t Care A subsequent ACTIVATE command to a different row in the same bank can only be issued after the previous active row has been closed (precharged). The minimum time interval between successive ACTIVATE commands to the same bank is defined by tRC. A subsequent ACTIVATE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive ACTIVATE commands to different banks is defined by tRRD. DDR2 devices with 8 banks (1Gb or larger) have an additional requirement: tFAW. This requires no more than four ACTIVATE commands may be issued in any given tFAW (MIN) period, as shown in Figure 43 (page 85). PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 84 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM ACTIVATE Figure 43: Multibank Activate Restriction T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 Command ACT READ ACT READ ACT READ ACT READ NOP NOP ACT Address Row Col Row Col Row Col Row Col Row Bank a Bank b Bank c Bank c Bank d Bank d Bank e CK# CK Bank address Bank a tRRD (MIN) Bank b tFAW (MIN) Don’t Care Note: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. DDR2-533 (-37E, x4 or x8), tCK = 3.75ns, BL = 4, AL = 3, CL = 4, tRRD (MIN) = 7.5ns, tFAW (MIN) = 37.5ns. 85 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM READ READ READ bursts are initiated with a READ command. The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is automatically precharged at the completion of the burst. If auto precharge is disabled, the row will be left open after the completion of the burst. During READ bursts, the valid data-out element from the starting column address will be available READ latency (RL) clocks later. RL is defined as the sum of AL and CL: RL = AL + CL. The value for AL and CL are programmable via the MR and EMR commands, respectively. Each subsequent data-out element will be valid nominally at the next positive or negative clock edge (at the next crossing of CK and CK#). Figure 44 (page 87) shows examples of RL based on different AL and CL settings. DQS/DQS# is driven by the DDR2 SDRAM along with output data. The initial LOW state on DQS and the HIGH state on DQS# are known as the read preamble (tRPRE). The LOW state on DQS and the HIGH state on DQS# coincident with the last data-out element are known as the read postamble (tRPST). Upon completion of a burst, assuming no other commands have been initiated, the DQ will go High-Z. A detailed explanation of tDQSQ (valid data-out skew), tQH (data-out window hold), and the valid data window are depicted in Figure 53 (page 95) and Figure 54 (page 96). A detailed explanation of tDQSCK (DQS transition skew to CK) and tAC (data-out transition skew to CK) is shown in Figure 55 (page 97). Data from any READ burst may be concatenated with data from a subsequent READ command to provide a continuous flow of data. The first data element from the new burst follows the last element of a completed burst. The new READ command should be issued x cycles after the first READ command, where x equals BL/2 cycles (see Figure 45 (page 88)). Nonconsecutive read data is illustrated in Figure 46 (page 89). Full-speed random read accesses within a page (or pages) can be performed. DDR2 SDRAM supports the use of concurrent auto precharge timing (see Table 41 (page 92)). DDR2 SDRAM does not allow interrupting or truncating of any READ burst using BL = 4 operations. Once the BL = 4 READ command is registered, it must be allowed to complete the entire READ burst. However, a READ (with auto precharge disabled) using BL = 8 operation may be interrupted and truncated only by another READ burst as long as the interruption occurs on a 4-bit boundary due to the 4n prefetch architecture of DDR2 SDRAM. As shown in Figure 47 (page 90), READ burst BL = 8 operations may not be interrupted or truncated with any other command except another READ command. Data from any READ burst must be completed before a subsequent WRITE burst is allowed. An example of a READ burst followed by a WRITE burst is shown in Figure 48 (page 90). The tDQSS (NOM) case is shown (tDQSS [MIN] and tDQSS [MAX] are defined in Figure 56 (page 99)). PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 86 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM READ Figure 44: READ Latency CK# T0 T1 T2 T3 READ NOP NOP NOP T3n T4 T4n T5 CK Command Address NOP NOP Bank a, Col n RL = 3 (AL = 0, CL = 3) DQS, DQS# DO n DQ CK# T0 T1 T2 T3 T4 T4n READ NOP NOP NOP NOP T5 T5n CK Command Address NOP Bank a, Col n AL = 1 CL = 3 RL = 4 (AL = 1 + CL = 3) DQS, DQS# DO n DQ CK# T0 T1 T2 T3 READ NOP NOP NOP T3n T4 T4n T5 CK Command Address NOP NOP Bank a, Col n RL = 4 (AL = 0, CL = 4) DQS, DQS# DO n DQ Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. DO n = data-out from column n. 2. BL = 4. 3. Three subsequent elements of data-out appear in the programmed order following DO n. 4. Shown with nominal tAC, tDQSCK, and tDQSQ. 87 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM READ Figure 45: Consecutive READ Bursts T0 T1 T2 T3 Command READ NOP READ NOP Address Bank, Col n CK# T3n T4 T4n T5n T5 T6n T6 CK NOP NOP NOP Bank, Col b tCCD RL = 3 DQS, DQS# DO n DQ T0 T1 T2 Command READ NOP READ Address Bank, Col n CK# T2n T3 DO b T3n T4 T4n T5 T5n T6n T6 CK NOP NOP NOP NOP Bank, Col b tCCD RL = 4 DQS, DQS# DO n DQ Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN DO b Don’t Care 1. DO n (or b) = data-out from column n (or column b). 2. BL = 4. 3. Three subsequent elements of data-out appear in the programmed order following DO n. 4. Three subsequent elements of data-out appear in the programmed order following DO b. 5. Shown with nominal tAC, tDQSCK, and tDQSQ. 6. Example applies only when READ commands are issued to same device. 88 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM READ Figure 46: Nonconsecutive READ Bursts CK# CK Command T0 T1 T2 T3 T3n READ NOP NOP READ Address Bank, Col n T4 T4n NOP T5 T6 T6n NOP NOP T7 T7n NOP T8 NOP Bank, Col b CL = 3 DQS, DQS# DO n DQ DO b T4n T0 T1 T2 T3 T4 Command READ NOP NOP READ NOP Address Bank, Col n CK# CK T5 NOP T5n T6 T7 T7n NOP NOP T8 NOP Bank, Col b CL = 4 DQS, DQS# DO n DQ DO b Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. DO n (or b) = data-out from column n (or column b). 2. BL = 4. 3. Three subsequent elements of data-out appear in the programmed order following DO n. 4. Three subsequent elements of data-out appear in the programmed order following DO b. 5. Shown with nominal tAC, tDQSCK, and tDQSQ. 6. Example applies when READ commands are issued to different devices or nonconsecutive READs. 89 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM READ Figure 47: READ Interrupted by READ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Command READ1 NOP2 READ3 NOP2 Valid Valid Valid Valid Valid Valid Address Valid4 CK# CK Valid4 Valid5 A10 DQS, DQS# DO DQ DO DO DO DO DO DO DO DO DO DO DO CL = 3 (AL = 0) tCCD CL = 3 (AL = 0) Transitioning Data Notes: Don’t Care 1. BL = 8 required; auto precharge must be disabled (A10 = LOW). 2. NOP or COMMAND INHIBIT commands are valid. PRECHARGE command cannot be issued to banks used for READs at T0 and T2. 3. Interrupting READ command must be issued exactly 2 × tCK from previous READ. 4. READ command can be issued to any valid bank and row address (READ command at T0 and T2 can be either same bank or different bank). 5. Auto precharge can be either enabled (A10 = HIGH) or disabled (A10 = LOW) by the interrupting READ command. 6. Example shown uses AL = 0; CL = 3, BL = 8, shown with nominal tAC, tDQSCK, and tDQSQ. Figure 48: READ-to-WRITE CK# CK Command T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 ACT n READ n NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP DQS, DQS# tRCD = 3 WL = RL - 1 = 4 DO n DQ AL = 2 CL = 3 DO n+1 DO n+2 DO n+3 DI n DI n+1 DI n+2 DI n+3 RL = 5 Transitioning Data Notes: Don’t Care 1. BL = 4; CL = 3; AL = 2. 2. Shown with nominal tAC, tDQSCK, and tDQSQ. READ with Precharge A READ burst may be followed by a PRECHARGE command to the same bank, provided auto precharge is not activated. The minimum READ-to-PRECHARGE command spacing to the same bank has two requirements that must be satisfied: AL + BL/2 clocks and tRTP. tRTP is the minimum time from the rising clock edge that initiates the last 4-bit prefetch of a READ command to the PRECHARGE command. For BL = 4, this is the time from the actual READ (AL after the READ command) to PRECHARGE command. For BL = 8, this is the time from AL + 2 × CK after the READ-to-PRECHARGE command. Following the PRECHARGE command, a subsequent command to the same bank canPDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 90 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM READ not be issued until tRP is met. However, part of the row precharge time is hidden during the access of the last data elements. Examples of READ-to-PRECHARGE for BL = 4 are shown in Figure 49 and in Figure 50 for BL = 8. The delay from READ-to-PRECHARGE period to the same bank is AL + BL/ 2 - 2CK + MAX (tRTP/tCK or 2 × CK) where MAX means the larger of the two. Figure 49: READ-to-PRECHARGE – BL = 4 CK# CK Command T0 4-bit prefetch T1 T2 T3 T4 T5 T6 T7 NOP NOP PRE NOP NOP ACT NOP READ AL + BL/2 - 2CK + MAX (tRTP/tCK or 2CK) Address Bank a Bank a A10 Bank a Valid AL = 1 Valid CL = 3 DQS, DQS# ≥tRTP (MIN) DQ DO DO DO DO ≥tRP (MIN) ≥tRAS (MIN) ≥tRC (MIN) Transitioning Data Notes: Don’t Care 1. RL = 4 (AL = 1, CL = 3); BL = 4. 2. tRTP ≥ 2 clocks. 3. Shown with nominal tAC, tDQSCK, and tDQSQ. Figure 50: READ-to-PRECHARGE – BL = 8 CK# CK Command T0 First 4-bit prefetch T1 READ NOP T2 Second 4-bit prefetch T3 T4 T5 T6 T7 T8 NOP NOP NOP PRE NOP NOP ACT AL + BL/2 - 2CK + MAX (tRTP/tCK or 2CK) Address Bank a A10 AL = 1 Bank a Bank a Valid Valid CL = 3 DQS, DQS# DQ DO DO ≥tRTP (MIN) DO DO DO DO DO DO ≥tRP (MIN) ≥tRAS (MIN) ≥tRC (MIN) Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. RL = 4 (AL = 1, CL = 3); BL = 8. 2. tRTP ≥ 2 clocks. 3. Shown with nominal tAC, tDQSCK, and tDQSQ. 91 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM READ READ with Auto Precharge If A10 is high when a READ command is issued, the READ with auto precharge function is engaged. The DDR2 SDRAM starts an auto precharge operation on the rising clock edge that is AL + (BL/2) cycles later than the read with auto precharge command provided tRAS (MIN) and tRTP are satisfied. If tRAS (MIN) is not satisfied at this rising clock edge, the start point of the auto precharge operation will be delayed until tRAS (MIN) is satisfied. If tRTP (MIN) is not satisfied at this rising clock edge, the start point of the auto precharge operation will be delayed until tRTP (MIN) is satisfied. When the internal precharge is pushed out by tRTP, tRP starts at the point where the internal precharge happens (not at the next rising clock edge after this event). When BL = 4, the minimum time from READ with auto precharge to the next ACTIVATE command is AL + (tRTP + tRP)/tCK. When BL = 8, the minimum time from READ with auto precharge to the next ACTIVATE command is AL + 2 clocks + (tRTP + tRP)/tCK. The term (tRTP + tRP)/tCK is always rounded up to the next integer. A general purpose equation can also be used: AL + BL/2 - 2CK + (tRTP + tRP)/tCK. In any event, the internal precharge does not start earlier than two clocks after the last 4-bit prefetch. READ with auto precharge command may be applied to one bank while another bank is operational. This is referred to as concurrent auto precharge operation, as noted in Table 41. Examples of READ with precharge and READ with auto precharge with applicable timing requirements are shown in Figure 51 (page 93) and Figure 52 (page 94), respectively. Table 41: READ Using Concurrent Auto Precharge From Command (Bank n) To Command (Bank m) Minimum Delay (with Concurrent Auto Precharge) Units READ with auto precharge READ or READ with auto precharge BL/2 tCK WRITE or WRITE with auto precharge (BL/2) + 2 tCK PRECHARGE or ACTIVATE 1 tCK PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 92 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM READ Figure 51: Bank Read – Without Auto Precharge T1 T0 CK# CK T2 tCH tCK T3 T4 NOP1 READ2 T5 T6 T7 T7n NOP1 PRE3 NOP1 T8 T9 T8n tCL CKE Command NOP1 ACT NOP1 NOP1 ACT tRTP4 Address RA Col n A10 RA 5 RA All banks RA One bank Bank address Bank x Bank x6 Bank x tRCD Bank x CL = 3 tRP tRAS3 tRC DM Case 1: tAC (MIN) and tDQSCK (MIN) 7 DQS, DQS# tDQSCK (MIN) tRPRE tLZ (MIN) DO n DQ8 tLZ (MIN) Case 2: tAC (MAX) and tDQSCK (MAX) 7 DQS, DQS# tRPRE tAC (MIN) tDQSCK (MAX) tHZ (MIN) tRPST 7 tLZ (MAX) DQ8 DO n tLZ (MIN) tAC (MAX) Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN tRPST 7 tHZ (MAX) Don’t Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 and AL = 0 in the case shown. 3. The PRECHARGE command can only be applied at T6 if tRAS (MIN) is met. 4. READ-to-PRECHARGE = AL + BL/2 - 2CK + MAX (tRTP/tCK or 2CK). 5. Disable auto precharge. 6. “Don’t Care” if A10 is HIGH at T5. 7. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level, but to when the device begins to drive or no longer drives, respectively. 8. DO n = data-out from column n; subsequent elements are applied in the programmed order. 93 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM READ Figure 52: Bank Read – with Auto Precharge CK# T1 T0 CK T2 tCK tCH T3 T4 T5 T6 T7 T7n READ2,3 NOP1 NOP1 NOP1 NOP1 T8 T8n tCL CKE Command1 NOP1 ACT NOP1 ACT Col n RA Address NOP1 RA 4 A10 Bank address RA RA Bank x Bank x Bank x AL = 1 CL = 3 tRTP tRCD tRP tRAS tRC DM tDQSCK (MIN) Case 1: tAC (MIN) and tDQSCK (MIN) 5 DQS, DQS# tRPRE tRPST 5 tLZ (MIN) DO n DQ6 tLZ (MIN) Case 2: tAC (MAX) and tDQSCK (MAX) 5 tAC (MIN) tRPRE tDQSCK (MAX) tHZ (MIN) tRPST 5 DQS, DQS# tLZ (MAX) DQ6 DO n 4-bit prefetch t Internal LZ (MAX) precharge tAC (MAX) Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN tHZ (MAX) Don’t Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4, RL = 4 (AL = 1, CL = 3) in the case shown. 3. The DDR2 SDRAM internally delays auto precharge until both tRAS (MIN) and tRTP (MIN) have been satisfied. 4. Enable auto precharge. 5. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level, but to when the device begins to drive or no longer drives, respectively. 6. DO n = data-out from column n; subsequent elements are applied in the programmed order. 94 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM READ Figure 53: x4, x8 Data Output Timing – tDQSQ, tQH, and Data Valid Window T1 T2 T2n T3 T3n T4 CK# CK tHP1 tHP1 tHP1 tHP1 tDQSQ2 tDQSQ2 tQH5 tQH5 tQHS tHP1 tHP1 tDQSQ2 tDQSQ2 DQS# DQS3 DQ (last data valid) DQ4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ (first data no longer valid) tQH5 tQHS tQH5 tQHS tQHS DQ (last data valid) T2 T2n T3 T3n DQ (first data no longer valid) T2 T2n T3 T3n All DQs and DQS collectively6 T2 T2n T3 T3n Data valid window Data valid window Data valid window Data valid window Earliest signal transition Latest signal transition Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. tHP is the lesser of tCL or tCH clock transitions collectively when a bank is active. 2. tDQSQ is derived at each DQS clock edge, is not cumulative over time, begins with DQS transitions, and ends with the last valid transition of DQ. 3. DQ transitioning after the DQS transition defines the tDQSQ window. DQS transitions at T2 and at T2n are “early DQS,” at T3 are “nominal DQS,” and at T3n are “late DQS.” 4. DQ0, DQ1, DQ2, DQ3 for x4 or DQ0–DQ7 for x8. 5. tQH is derived from tHP: tQH = tHP - tQHS. 6. The data valid window is derived for each DQS transition and is defined as tQH - tDQSQ. 95 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM READ Figure 54: x16 Data Output Timing – tDQSQ, tQH, and Data Valid Window CK# T1 T2 T2n T3 T3n T4 CK tHP1 tHP1 tHP1 tDQSQ2 tHP1 tHP1 tHP1 tDQSQ2 tDQSQ2 tDQSQ2 tQH5 tQHS tQH5 tQHS tQH5 tQHS LDSQ# LDQS3 Lower Byte DQ (last data valid)4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ (first data no longer valid)4 tQH5 tQHS DQ (last data valid)4 T2 T2n T3 T3n DQ (first data no longer valid)4 T2 T2n T3 T3n DQ0–DQ7 and LDQS collectively6 T2 T2n T3 T3n Data valid window Data valid window Data valid window tDQSQ2 Data valid window tDQSQ2 tDQSQ2 tDQSQ2 tQH5 tQHS tQH5 tQHS tQH5 tQHS UDQS# UDQS3 Upper Byte DQ (last data valid)7 DQ7 DQ7 DQ7 DQ7 DQ7 DQ7 DQ (first data no longer valid)7 tQH5 DQ (last data valid)7 T2 T2n DQ (first data no longer valid)7 T2 T2n DQ8–DQ15 and UDQS collectively6 T2 T2n Data valid window Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Data valid window T3 T3 tQHS T3n T3n T3 T3n Data valid window Data valid window 1. tHP is the lesser of tCL or tCH clock transitions collectively when a bank is active. 2. tDQSQ is derived at each DQS clock edge, is not cumulative over time, begins with DQS transitions, and ends with the last valid transition of DQ. 3. DQ transitioning after the DQS transitions define the tDQSQ window. LDQS defines the lower byte, and UDQS defines the upper byte. 4. DQ0, DQ1, DQ2, DQ3, DQ4, DQ5, DQ6, or DQ7. 96 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM WRITE 5. tQH is derived from tHP: tQH = tHP - tQHS. 6. The data valid window is derived for each DQS transition and is tQH - tDQSQ. 7. DQ8, DQ9, DQ10, D11, DQ12, DQ13, DQ14, or DQ15. Figure 55: Data Output Timing – tAC and tDQSCK CK# T01 T1 T2 T3 T3n T4 T4n T5 T5n T6 T6n T7 CK tLZ (MIN) tRPRE tDQSCK2 (MAX) tDQSCK2 (MIN) tHZ (MAX) tRPST DQS#/DQS or LDQS#/LDQS/UDQ#/UDQS3 DQ (last data valid) DQ (first data valid) All DQs collectively4 T3 tLZ (MIN) Notes: T3n T4 T4n T3 T3n T4 T4n T3 T3n T4 T4n tAC5 (MIN) T5 T5n T6 T6n T5 T5n T6 T6n T5 T5n T6 T6n tAC5 (MAX) tHZ (MAX) 1. READ command with CL = 3, AL = 0 issued at T0. 2. tDQSCK is the DQS output window relative to CK and is the long-term component of DQS skew. 3. DQ transitioning after DQS transitions define tDQSQ window. 4. All DQ must transition by tDQSQ after DQS transitions, regardless of tAC. 5. tAC is the DQ output window relative to CK and is the “long term” component of DQ skew. 6. tLZ (MIN) and tAC (MIN) are the first valid signal transitions. 7. tHZ (MAX) and tAC (MAX) are the latest valid signal transitions. 8. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level, but to when the device begins to drive or no longer drives, respectively. WRITE WRITE bursts are initiated with a WRITE command. DDR2 SDRAM uses WL equal to RL minus one clock cycle (WL = RL - 1CK) (see READ (page 69)). The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. Note: For the WRITE commands used in the following illustrations, auto precharge is disabled. During WRITE bursts, the first valid data-in element will be registered on the first rising edge of DQS following the WRITE command, and subsequent data elements will be registered on successive edges of DQS. The LOW state on DQS between the WRITE command and the first rising edge is known as the write preamble; the LOW state on DQS following the last data-in element is known as the write postamble. The time between the WRITE command and the first rising DQS edge is WL ±tDQSS. Subsequent DQS positive rising edges are timed, relative to the associated clock edge, as ±tDQSS. tDQSS is specified with a relatively wide range (25% of one clock cycle). All of PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 97 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM WRITE the WRITE diagrams show the nominal case, and where the two extreme cases (tDQSS [MIN] and tDQSS [MAX]) might not be intuitive, they have also been included. Figure 56 (page 99) shows the nominal case and the extremes of tDQSS for BL = 4. Upon completion of a burst, assuming no other commands have been initiated, the DQ will remain High-Z and any additional input data will be ignored. Data for any WRITE burst may be concatenated with a subsequent WRITE command to provide continuous flow of input data. The first data element from the new burst is applied after the last element of a completed burst. The new WRITE command should be issued x cycles after the first WRITE command, where x equals BL/2. Figure 57 (page 100) shows concatenated bursts of BL = 4 and how full-speed random write accesses within a page or pages can be performed. An example of nonconsecutive WRITEs is shown in Figure 58 (page 100). DDR2 SDRAM supports concurrent auto precharge options, as shown in Table 42. DDR2 SDRAM does not allow interrupting or truncating any WRITE burst using BL = 4 operation. Once the BL = 4 WRITE command is registered, it must be allowed to complete the entire WRITE burst cycle. However, a WRITE BL = 8 operation (with auto precharge disabled) might be interrupted and truncated only by another WRITE burst as long as the interruption occurs on a 4-bit boundary due to the 4n-prefetch architecture of DDR2 SDRAM. WRITE burst BL = 8 operations may not be interrupted or truncated with any command except another WRITE command, as shown in Figure 59 (page 101). Data for any WRITE burst may be followed by a subsequent READ command. To follow a WRITE, tWTR should be met, as shown in Figure 60 (page 102). The number of clock cycles required to meet tWTR is either 2 or tWTR/tCK, whichever is greater. Data for any WRITE burst may be followed by a subsequent PRECHARGE command. tWR must be met, as shown in Figure 61 (page 103). tWR starts at the end of the data burst, regardless of the data mask condition. Table 42: WRITE Using Concurrent Auto Precharge From Command (Bank n) WRITE with auto precharge PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN To Command (Bank m) Minimum Delay (with Concurrent Auto Precharge) READ or READ with auto precharge (CL - 1) + (BL/2) + tWTR Units tCK WRITE or WRITE with auto precharge (BL/2) tCK PRECHARGE or ACTIVATE 1 tCK 98 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM WRITE Figure 56: Write Burst T0 T1 T2 Command WRITE NOP NOP Address Bank a, Col b CK# T2n T3 T3n T4 CK tDQSS (NOM) NOP WL ± tDQSS NOP 5 DQS, DQS# DI b DQ DM tDQSS (MIN) tDQSS5 WL - tDQSS DQS, DQS# DI b DQ DM tDQSS (MAX) WL + tDQSS tDQSS5 DQS, DQS# DI b DQ DM Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. Subsequent rising DQS signals must align to the clock within tDQSS. 2. DI b = data-in for column b. 3. Three subsequent elements of data-in are applied in the programmed order following DI b. 4. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2. 5. A10 is LOW with the WRITE command (auto precharge is disabled). 99 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM WRITE Figure 57: Consecutive WRITE-to-WRITE CK# T0 T1 WRITE NOP T1n T2 T2n T3 T3n T4 T4n T5 T5n T6 CK Command WRITE NOP NOP NOP 1 1 NOP tCCD WL = 2 WL = 2 Address Bank, Col b tDQSS (NOM) Bank, Col n WL ± tDQSS 1 DQS, DQS# DI b DQ DI n DM Transitioning Data Notes: Don’t Care 1. Subsequent rising DQS signals must align to the clock within tDQSS. 2. DI b, etc. = data-in for column b, etc. 3. Three subsequent elements of data-in are applied in the programmed order following DI b. 4. Three subsequent elements of data-in are applied in the programmed order following DI n. 5. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2. 6. Each WRITE command may be to any bank. Figure 58: Nonconsecutive WRITE-to-WRITE CK# T0 T1 T2 NOP NOP T2n T3 T3n T4 T4n T5 T5n T6 T6n CK Command WRITE WRITE Address tDQSS (NOM) NOP NOP NOP 1 1 WL = 2 WL = 2 Bank, Col b Bank, Col n WL ± tDQSS 1 DQS, DQS# DQ DI b DI n DM Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. Subsequent rising DQS signals must align to the clock within tDQSS. 2. DI b (or n), etc. = data-in for column b (or column n). 3. Three subsequent elements of data-in are applied in the programmed order following DI b. 4. Three subsequent elements of data-in are applied in the programmed order following DI n. 5. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2. 6. Each WRITE command may be to any bank. 100 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM WRITE Figure 59: WRITE Interrupted by WRITE CK# CK Command Address T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 WRITE1 a NOP2 WRITE3 b NOP2 NOP2 NOP2 NOP2 Valid4 Valid4 Valid4 Valid5 Valid5 Valid6 A10 7 DQS, DQS# DI a DQ DI a+1 7 DI a+2 DI a+3 DI b 7 DI b+1 DI b+2 7 DI b+3 7 DI b+4 DI b+5 DI b+6 DI b+7 WL = 3 2-clock requirement WL = 3 Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. BL = 8 required and auto precharge must be disabled (A10 = LOW). 2. The NOP or COMMAND INHIBIT commands are valid. The PRECHARGE command cannot be issued to banks used for WRITEs at T0 and T2. 3. The interrupting WRITE command must be issued exactly 2 × tCK from previous WRITE. 4. The earliest WRITE-to-PRECHARGE timing for WRITE at T0 is WL + BL/2 + tWR where tWR starts with T7 and not T5 (because BL = 8 from MR and not the truncated length). 5. The WRITE command can be issued to any valid bank and row address (WRITE command at T0 and T2 can be either same bank or different bank). 6. Auto precharge can be either enabled (A10 = HIGH) or disabled (A10 = LOW) by the interrupting WRITE command. 7. Subsequent rising DQS signals must align to the clock within tDQSS. 8. Example shown uses AL = 0; CL = 4, BL = 8. 101 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM WRITE Figure 60: WRITE-to-READ CK# T0 T1 T2 WRITE NOP NOP T2n T3 T3n T4 T5 T6 T7 T8 NOP READ NOP NOP T9 T9n CK Command NOP NOP NOP tWTR1 Address Bank a, Col b tDQSS (NOM) Bank a, Col n WL ± tDQSS CL = 3 2 DQS, DQS# DI b DQ DI DM tDQSS (MIN) WL - tDQSS CL = 3 2 DQS, DQS# DI b DQ DI DM tDQSS (MAX) WL + tDQSS CL = 3 2 DQS, DQS# DI b DQ DI DM Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. tWTR is required for any READ following a WRITE to the same device, but it is not required between module ranks. 2. Subsequent rising DQS signals must align to the clock within tDQSS. 3. DI b = data-in for column b; DO n = data-out from column n. 4. BL = 4, AL = 0, CL = 3; thus, WL = 2. 5. One subsequent element of data-in is applied in the programmed order following DI b. 6. tWTR is referenced from the first positive CK edge after the last data-in pair. 7. A10 is LOW with the WRITE command (auto precharge is disabled). 8. The number of clock cycles required to meet tWTR is either 2 or tWTR/tCK, whichever is greater. 102 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM WRITE Figure 61: WRITE-to-PRECHARGE CK# T0 T1 T2 WRITE NOP NOP T2n T3 T3n T4 T5 NOP NOP T6 T7 NOP PRE CK Command NOP tWR Address Bank a, Col b tDQSS (NOM) tRP Bank, (a or all) WL + tDQSS 1 DQS# DQS DI b DQ DM tDQSS (MIN) WL - tDQSS 1 DQS# DQS DI b DQ DM tDQSS (MAX) WL + tDQSS 1 DQS# DQS DI b DQ DM Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. Subsequent rising DQS signals must align to the clock within tDQSS. 2. DI b = data-in for column b. 3. Three subsequent elements of data-in are applied in the programmed order following DI b. 4. BL = 4, CL = 3, AL = 0; thus, WL = 2. 5. tWR is referenced from the first positive CK edge after the last data-in pair. 6. The PRECHARGE and WRITE commands are to the same bank. However, the PRECHARGE and WRITE commands may be to different banks, in which case tWR is not required and the PRECHARGE command could be applied earlier. 7. A10 is LOW with the WRITE command (auto precharge is disabled). 103 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM WRITE Figure 62: Bank Write – Without Auto Precharge CK# T0 T1 CK T3 T4 T5 WRITE2 NOP1 NOP1 T2 tCK tCH T5n T6 T6n T7 T8 T9 NOP1 NOP1 PRE tCL CKE Command NOP1 ACT NOP1 Address RA Col n A10 RA 3 NOP1 All banks One bank Bank select Bank x Bank x4 Bank x tRCD tWR WL = 2 tRP tRAS WL ±tDQSS (NOM) 5 DQS, DQS# tWPRE tDQSL tDQSH tWPST DI n DQ6 DM Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 and AL = 0 in the case shown. 3. Disable auto precharge. 4. “Don’t Care” if A10 is HIGH at T9. 5. Subsequent rising DQS signals must align to the clock within tDQSS. 6. DI n = data-in for column n; subsequent elements are applied in the programmed order. 7. tDSH is applicable during tDQSS (MIN) and is referenced from CK T5 or T6. 8. tDSS is applicable during tDQSS (MAX) and is referenced from CK T6 or T7. 104 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM WRITE Figure 63: Bank Write – with Auto Precharge CK# T0 T1 CK T2 tCK tCH T3 T4 T5 WRITE2 NOP1 NOP1 T5n T6 T6n T7 T8 T9 NOP1 NOP1 NOP1 tCL CKE Command NOP1 ACT Address RA A10 RA NOP1 NOP1 Col n 3 Bank select Bank x Bank x tRCD WR4 WL = 2 tRP tRAS WL ±tDQSS (NOM) 5 DQS, DQS# tWPRE tDQSL tDQSH tWPST DI n DQ6 DM Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 and AL = 0 in the case shown. 3. Enable auto precharge. 4. WR is programmed via MR9–MR11 and is calculated by dividing tWR (in ns) by tCK and rounding up to the next integer value. 5. Subsequent rising DQS signals must align to the clock within tDQSS. 6. DI n = data-in from column n; subsequent elements are applied in the programmed order. 7. tDSH is applicable during tDQSS (MIN) and is referenced from CK T5 or T6. 8. tDSS is applicable during tDQSS (MAX) and is referenced from CK T6 or T7. 105 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM WRITE Figure 64: WRITE – DM Operation CK# CK T0 T1 T2 tCK T3 tCH T4 T5 T6 T6n NOP1 NOP1 WL = 2 NOP1 T7 T7n T8 T9 T10 T11 tCL CKE Command NOP1 ACT NOP1 WRITE2 AL = 1 Address RA Col n A10 RA 3 Bank select NOP1 NOP1 NOP1 NOP1 PRE All banks Bank x One bank Bank x4 Bank x tRCD tWR5 tRPA tRAS WL ±tDQSS (NOM) 6 DQS, DQS# tWPRE DQ7 tDQSL tDQSH tWPST DI n DM Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4, AL = 1, and WL = 2 in the case shown. 3. Disable auto precharge. 4. “Don’t Care” if A10 is HIGH at T11. 5. tWR starts at the end of the data burst regardless of the data mask condition. 6. Subsequent rising DQS signals must align to the clock within tDQSS. 7. DI n = data-in for column n; subsequent elements are applied in the programmed order. 8. tDSH is applicable during tDQSS (MIN) and is referenced from CK T6 or T7. 9. tDSS is applicable during tDQSS (MAX) and is referenced from CK T7 or T8. 106 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM PRECHARGE Figure 65: Data Input Timing T0 T1 T1n T2 T2n T3 T3n T4 CK# CK t DSH 1 t DSS 2 3 WL - tDQSS (NOM) DQS DQS# t WPRE DQ t DQSL t DSH 1 t DSS 2 t DQSH t WPST DI DM Transitioning Data Notes: 1. 2. 3. 4. 5. 6. Don’t Care tDSH (MIN) generally occurs during tDQSS (MIN). (MIN) generally occurs during tDQSS (MAX). Subsequent rising DQS signals must align to the clock within tDQSS. WRITE command issued at T0. For x16, LDQS controls the lower byte and UDQS controls the upper byte. WRITE command with WL = 2 (CL = 3, AL = 0) issued at T0. tDSS PRECHARGE Precharge can be initiated by either a manual PRECHARGE command or by an autoprecharge in conjunction with either a READ or WRITE command. Precharge will deactivate the open row in a particular bank or the open row in all banks. The PRECHARGE operation is shown in the previous READ and WRITE operation sections. During a manual PRECHARGE command, the A10 input determines whether one or all banks are to be precharged. In the case where only one bank is to be precharged, bank address inputs determine the bank to be precharged. When all banks are to be precharged, the bank address inputs are treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. When a single-bank PRECHARGE command is issued, tRP timing applies. When the PRECHARGE (ALL) command is issued, tRPA timing applies, regardless of the number of banks opened. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 107 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM REFRESH REFRESH The commercial temperature DDR2 SDRAM requires REFRESH cycles at an average interval of 7.8125µs (MAX) and all rows in all banks must be refreshed at least once every 64ms. The refresh period begins when the REFRESH command is registered and ends tRFC (MIN) later. The average interval must be reduced to 3.9µs (MAX) when T exC ceeds +85°C. Figure 66: Refresh Mode T0 CK# T2 T1 CK tCK tCH T3 T4 Ta0 Ta1 Tb0 Tb1 Tb2 NOP1 REF NOP1 REF2 NOP1 NOP1 ACT tCL CKE Command NOP1 NOP1 PRE Address RA All banks A10 RA One bank Bank Bank(s)3 BA DQS, DQS#4 DQ4 DM4 tRP tRFC (MIN) tRFC2 Indicates a break in time scale Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. CKE must be active during clock positive transitions. 2. The second REFRESH is not required and is only shown as an example of two back-toback REFRESH commands. 3. “Don’t Care” if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active (must precharge all active banks). 4. DM, DQ, and DQS signals are all “Don’t Care”/High-Z for operations shown. 108 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM SELF REFRESH SELF REFRESH The SELF REFRESH command is initiated when CKE is LOW. The differential clock should remain stable and meet tCKE specifications at least 1 × tCK after entering self refresh mode. The procedure for exiting self refresh requires a sequence of commands. First, the differential clock must be stable and meet tCK specifications at least 1 × tCK prior to CKE going back to HIGH. Once CKE is HIGH (tCKE [MIN] has been satisfied with three clock registrations), the DDR2 SDRAM must have NOP or DESELECT commands issued for tXSNR. A simple algorithm for meeting both refresh and DLL requirements is used to apply NOP or DESELECT commands for 200 clock cycles before applying any other command. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 109 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM SELF REFRESH Figure 67: Self Refresh CK# CK1 T0 T1 tCH T2 Ta0 tCK1 tCL Ta1 tCK1 Tb0 Ta2 tISXR2 Tc0 tCKE3 Td0 t IH CKE1 Command NOP NOP4 REF NOP4 Valid5 Valid5 t IH ODT6 tAOFD/tAOFPD6 Address Valid Valid7 DQS#, DQS DQ DM tXSRD2, 7 Enter self refresh mode (synchronous) Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN tXSNR2, 5, 10 tCKE (MIN)9 tRP8 Exit self refresh mode (asynchronous) Indicates a break in time scale Don’t Care 1. Clock must be stable and meeting tCK specifications at least 1 × tCK after entering self refresh mode and at least 1 × tCK prior to exiting self refresh mode. 2. Self refresh exit is asynchronous; however, tXSNR and tXSRD timing starts at the first rising clock edge where CKE HIGH satisfies tISXR. 3. CKE must stay HIGH until tXSRD is met; however, if self refresh is being re-entered, CKE may go back LOW after tXSNR is satisfied. 4. NOP or DESELECT commands are required prior to exiting self refresh until state Tc0, which allows any nonREAD command. 5. tXSNR is required before any nonREAD command can be applied. 6. ODT must be disabled and RTT off (tAOFD and tAOFPD have been satisfied) prior to entering self refresh at state T1. 7. tXSRD (200 cycles of CK) is required before a READ command can be applied at state Td0. 8. Device must be in the all banks idle state prior to entering self refresh mode. 9. After self refresh has been entered, tCKE (MIN) must be satisfied prior to exiting self refresh. 10. Upon exiting SELF REFRESH, ODT must remain LOW until tXSRD is satisfied. 110 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Power-Down Mode Power-Down Mode DDR2 SDRAM supports multiple power-down modes that allow significant power savings over normal operating modes. CKE is used to enter and exit different power-down modes. Power-down entry and exit timings are shown in Figure 68 (page 112). Detailed power-down entry conditions are shown in Figure 69 (page 114)–Figure 76 (page 117). Table 43 (page 113) is the CKE Truth Table. DDR2 SDRAM requires CKE to be registered HIGH (active) at all times that an access is in progress—from the issuing of a READ or WRITE command until completion of the burst. Thus, a clock suspend is not supported. For READs, a burst completion is defined when the read postamble is satisfied; for WRITEs, a burst completion is defined when the write postamble and tWR (WRITE-to-PRECHARGE command) or tWTR (WRITE-toREAD command) are satisfied, as shown in Figure 71 (page 115) and Figure 72 (page 115) on Figure 72 (page 115). The number of clock cycles required to meet tWTR is either two or tWTR/tCK, whichever is greater. Power-down mode (see Figure 68 (page 112)) is entered when CKE is registered low coincident with an NOP or DESELECT command. CKE is not allowed to go LOW during a mode register or extended mode register command time, or while a READ or WRITE operation is in progress. If power-down occurs when all banks are idle, this mode is referred to as precharge power-down. If power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers, excluding CK, CK#, ODT, and CKE. For maximum power savings, the DLL is frozen during precharge power-down. Exiting active powerdown requires the device to be at the same voltage and frequency as when it entered power-down. Exiting precharge power-down requires the device to be at the same voltage as when it entered power-down; however, the clock frequency is allowed to change (see Precharge Power-Down Clock Frequency Change (page 118)). The maximum duration for either active or precharge power-down is limited by the refresh requirements of the device tRFC (MAX). The minimum duration for power-down entry and exit is limited by the tCKE (MIN) parameter. The following must be maintained while in power-down mode: CKE LOW, a stable clock signal, and stable power supply signals at the inputs of the DDR2 SDRAM. All other input signals are “Don’t Care” except ODT. Detailed ODT timing diagrams for different power-down modes are shown in Figure 81 (page 123)–Figure 86 (page 127). The power-down state is synchronously exited when CKE is registered HIGH (in conjunction with a NOP or DESELECT command), as shown in Figure 68 (page 112). PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 111 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Power-Down Mode Figure 68: Power-Down T1 T2 T3 T4 T5 T6 T7 T8 NOP NOP Valid Valid CK# CK Command tCH tCK Valid1 tCL NOP tCKE (MIN)2 tIH CKE tCKE (MIN)2 tIH tIS Address Valid Valid Valid tXP3, tXARD4 tXARDS5 DQS, DQS# DQ DM Enter power-down mode6 Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Exit power-down mode Don’t Care 1. If this command is a PRECHARGE (or if the device is already in the idle state), then the power-down mode shown is precharge power-down. If this command is an ACTIVATE (or if at least one row is already active), then the power-down mode shown is active powerdown. 2. tCKE (MIN) of three clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to achieve the three clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + 2 × tCK + tIH. CKE must not transition during its tIS and tIH window. 3. tXP timing is used for exit precharge power-down and active power-down to any nonREAD command. 4. tXARD timing is used for exit active power-down to READ command if fast exit is selected via MR (bit 12 = 0). 5. tXARDS timing is used for exit active power-down to READ command if slow exit is selected via MR (bit 12 = 1). 6. No column accesses are allowed to be in progress at the time power-down is entered. If the DLL was not in a locked state when CKE went LOW, the DLL must be reset after exiting power-down mode for proper READ operation. 112 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Power-Down Mode Table 43: Truth Table – CKE Notes 1–4 apply to the entire table CKE Current State Previous Cycle (n - 1) Current Cycle (n) Command (n) CS#, RAS#, CAS#, WE# Action (n) Notes Power-down L L X Maintain power-down 5, 6 L H DESELECT or NOP Power-down exit 7, 8 L L X Maintain self refresh 6 L H DESELECT or NOP Self refresh exit 7, 9, 10 Bank(s) active H L DESELECT or NOP Active power-down entry All banks idle H L DESELECT or NOP Precharge power-down entry 7, 8, 11 H L Refresh Self refresh entry 10, 12, 13 H H Self refresh Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Shown in Table 36 (page 64) 7, 8, 11, 12 14 1. CKE (n) is the logic state of CKE at clock edge n; CKE (n - 1) was the state of CKE at the previous clock edge. 2. Current state is the state of the DDR2 SDRAM immediately prior to clock edge n. 3. Command (n) is the command registered at clock edge n, and action (n) is a result of command (n). 4. The state of ODT does not affect the states described in this table. The ODT function is not available during self refresh (see ODT Timing (page 121) for more details and specific restrictions). 5. Power-down modes do not perform any REFRESH operations. The duration of powerdown mode is therefore limited by the refresh requirements. 6. “X” means “Don’t Care” (including floating around VREF) in self refresh and powerdown. However, ODT must be driven high or low in power-down if the ODT function is enabled via EMR. 7. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document. 8. Valid commands for power-down entry and exit are NOP and DESELECT only. 9. On self refresh exit, DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period. READ commands may be issued only after tXSRD (200 clocks) is satisfied. 10. Valid commands for self refresh exit are NOP and DESELECT only. 11. Power-down and self refresh can not be entered while READ or WRITE operations, LOAD MODE operations, or PRECHARGE operations are in progress. See SELF REFRESH (page 109) and SELF REFRESH (page 70) for a list of detailed restrictions. 12. Minimum CKE high time is tCKE = 3 × tCK. Minimum CKE LOW time is tCKE = 3 × tCK. This requires a minimum of 3 clock cycles of registration. 13. Self refresh mode can only be entered from the all banks idle state. 14. Must be a legal command, as defined in Table 36 (page 64). 113 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Power-Down Mode Figure 69: READ-to-Power-Down or Self Refresh Entry CK# T0 T1 T2 T3 T4 T5 READ NOP NOP NOP Valid Valid T6 T7 CK Command NOP1 tCKE (MIN) CKE Address Valid A10 DQS, DQS# DQ DO DO RL = 3 DO DO Power-down2 or self refresh entry Transitioning Data Notes: Don’t Care 1. In the example shown, READ burst completes at T5; earliest power-down or self refresh entry is at T6. 2. Power-down or self refresh entry may occur after the READ burst completes. Figure 70: READ with Auto Precharge-to-Power-Down or Self Refresh Entry CK# T0 T1 T2 T3 T4 T5 T6 READ NOP NOP NOP Valid Valid NOP1 T7 CK Command tCKE (MIN) CKE Address Valid A10 DQS, DQS# DQ RL = 3 DO DO DO DO Power-down or self refresh2 entry Transitioning Data Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. In the example shown, READ burst completes at T5; earliest power-down or self refresh entry is at T6. 2. Power-down or self refresh entry may occur after the READ burst completes. 114 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Power-Down Mode Figure 71: WRITE-to-Power-Down or Self Refresh Entry CK# CK Command T0 T1 T2 T3 T4 T5 T6 T7 WRITE NOP NOP NOP Valid Valid Valid NOP1 T8 tCKE (MIN) CKE Address Valid A10 DQS, DQS# DQ DO DO DO DO tWTR WL = 3 Power-down or self refresh entry1 Transitioning Data Note: Don’t Care 1. Power-down or self refresh entry may occur after the WRITE burst completes. Figure 72: WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry CK# CK Command T0 T1 T2 T3 T4 T5 Ta0 Ta1 WRITE NOP NOP NOP Valid Valid Valid1 NOP Ta2 tCKE (MIN) CKE Address Valid A10 DQS, DQS# DQ DO DO DO DO WR2 WL = 3 Power-down or self refresh entry Indicates a break in time scale Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Transitioning Data Don’t Care 1. Internal PRECHARGE occurs at Ta0 when WR has completed; power-down entry may occur 1 x tCK later at Ta1, prior to tRP being satisfied. 2. WR is programmed through MR9–MR11 and represents (tWR [MIN] ns/tCK) rounded up to next integer tCK. 115 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Power-Down Mode Figure 73: REFRESH Command-to-Power-Down Entry CK# T0 T1 T2 Valid REFRESH NOP T3 CK Command tCKE (MIN) CKE 1 x tCK Power-down1 entry Don’t Care Note: 1. The earliest precharge power-down entry may occur is at T2, which is 1 × tCK after the REFRESH command. Precharge power-down entry occurs prior to tRFC (MIN) being satisfied. Figure 74: ACTIVATE Command-to-Power-Down Entry CK# T0 T1 T2 Valid ACT NOP T3 CK Command Address VALID tCKE (MIN) CKE 1 tCK Power-down1 entry Don’t Care Note: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. The earliest active power-down entry may occur is at T2, which is 1 × tCK after the ACTIVATE command. Active power-down entry occurs prior to tRCD (MIN) being satisfied. 116 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Power-Down Mode Figure 75: PRECHARGE Command-to-Power-Down Entry T0 T1 T2 Valid PRE NOP CK# T3 CK Command Address Valid All banks vs Single bank A10 tCKE (MIN) CKE 1 x tCK Power-down1 entry Don’t Care Note: 1. The earliest precharge power-down entry may occur is at T2, which is 1 × tCK after the PRECHARGE command. Precharge power-down entry occurs prior to tRP (MIN) being satisfied. Figure 76: LOAD MODE Command-to-Power-Down Entry CK# T0 T1 T2 T3 Valid LM NOP NOP T4 CK Command Valid1 Address tCKE (MIN) CKE tRP2 tMRD Power-down3 entry Don’t Care Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 1. Valid address for LM command includes MR, EMR, EMR(2), and EMR(3) registers. 2. All banks must be in the precharged state and tRP met prior to issuing LM command. 3. The earliest precharge power-down entry is at T3, which is after tMRD is satisfied. 117 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Precharge Power-Down Clock Frequency Change Precharge Power-Down Clock Frequency Change When the DDR2 SDRAM is in precharge power-down mode, ODT must be turned off and CKE must be at a logic LOW level. A minimum of two differential clock cycles must pass after CKE goes LOW before clock frequency may change. The device input clock frequency is allowed to change only within minimum and maximum operating frequencies specified for the particular speed grade. During input clock frequency change, ODT and CKE must be held at stable LOW levels. When the input clock frequency is changed, new stable clocks must be provided to the device before precharge power-down may be exited, and DLL must be reset via MR after precharge power-down exit. Depending on the new clock frequency, additional LM commands might be required to adjust the CL, WR, AL, and so forth. Depending on the new clock frequency, an additional LM command might be required to appropriately set the WR MR9, MR10, MR11. During the DLL relock period of 200 cycles, ODT must remain off. After the DLL lock time, the DRAM is ready to operate with a new clock frequency. Figure 77: Input Clock Frequency Change During Precharge Power-Down Mode New clock frequency Previous clock frequency CK# CK T0 T1 tCH T2 T3 Ta1 Ta0 tCH tCL Ta2 Ta3 Ta4 Tb0 NOP Valid tCL tCK tCK 2 x tCK (MIN)1 1 x tCK (MIN)2 tCKE (MIN)3 tCKE (MIN)3 CKE Command Address Valid4 NOP NOP NOP Valid LM DLL RESET Valid tXP ODT DQS, DQS# DQ High-Z High-Z DM Enter precharge power-down mode Frequency change Exit precharge power-down mode 200 x tCK Indicates a break in time scale Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Don’t Care 1. A minimum of 2 × tCK is required after entering precharge power-down prior to changing clock frequencies. 2. When the new clock frequency has changed and is stable, a minimum of 1 × tCK is required prior to exiting precharge power-down. 118 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Reset 3. Minimum CKE high time is tCKE = 3 × tCK. Minimum CKE LOW time is tCKE = 3 × tCK. This requires a minimum of three clock cycles of registration. 4. If this command is a PRECHARGE (or if the device is already in the idle state), then the power-down mode shown is precharge power-down, which is required prior to the clock frequency change. Reset CKE Low Anytime DDR2 SDRAM applications may go into a reset state anytime during normal operation. If an application enters a reset condition, CKE is used to ensure the DDR2 SDRAM device resumes normal operation after reinitializing. All data will be lost during a reset condition; however, the DDR2 SDRAM device will continue to operate properly if the following conditions outlined in this section are satisfied. The reset condition defined here assumes all supply voltages (VDD, VDDQ, VDDL, and VREF) are stable and meet all DC specifications prior to, during, and after the RESET operation. All other input balls of the DDR2 SDRAM device are a “Don’t Care” during RESET with the exception of CKE. If CKE asynchronously drops LOW during any valid operation (including a READ or WRITE burst), the memory controller must satisfy the timing parameter tDELAY before turning off the clocks. Stable clocks must exist at the CK, CK# inputs of the DRAM before CKE is raised HIGH, at which time the normal initialization sequence must occur (see Initialization). The DDR2 SDRAM device is now ready for normal operation after the initialization sequence. Figure 78 (page 120) shows the proper sequence for a RESET operation. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 119 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM Reset Figure 78: RESET Function T0 T1 T2 T3 T4 T5 tCK CK# CK tDELAY tCL Tb0 Ta0 tCL tCKE (MIN) 1 CKE ODT Command NOP2 READ READ NOP2 NOP2 NOP2 PRE DM3 Address Col n Col n All banks A10 Bank address Bank a DQS3 DQ3 Bank b High-Z High-Z High-Z DO DO 4 High-Z DO High-Z RTT System RESET T = 400ns (MIN) tRPA Start of normal5 initialization sequence Indicates a break in time scale Notes: PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN Unknown RTT On Transitioning Data Don’t Care 1. VDD, VDDL, VDDQ, VTT, and VREF must be valid at all times. 2. Either NOP or DESELECT command may be applied. 3. DM represents DM for x4/x8 configuration and UDM, LDM for x16 configuration. DQS represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, and RDQS# for the appropriate configuration (x4, x8, x16). 4. In certain cases where a READ cycle is interrupted, CKE going HIGH may result in the completion of the burst. 5. Initialization timing is shown in Figure 41 (page 81). 120 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM ODT Timing ODT Timing Once a 12ns delay (tMOD) has been satisfied, and after the ODT function has been enabled via the EMR LOAD MODE command, ODT can be accessed under two timing categories. ODT will operate either in synchronous mode or asynchronous mode, depending on the state of CKE. ODT can switch anytime except during self refresh mode and a few clocks after being enabled via EMR, as shown in Figure 79 (page 122). There are two timing categories for ODT—turn-on and turn-off. During active mode (CKE HIGH) and fast-exit power-down mode (any row of any bank open, CKE LOW, MR[12 = 0]), tAOND, tAON, tAOFD, and tAOF timing parameters are applied, as shown in Figure 81 (page 123). During slow-exit power-down mode (any row of any bank open, CKE LOW, MR[12] = 1) and precharge power-down mode (all banks/rows precharged and idle, CKE LOW), tAONPD and tAOFPD timing parameters are applied, as shown in Figure 82 (page 124). ODT turn-off timing, prior to entering any power-down mode, is determined by the parameter tANPD (MIN), as shown in Figure 83 (page 124). At state T2, the ODT HIGH signal satisfies tANPD (MIN) prior to entering power-down mode at T5. When tANPD (MIN) is satisfied, tAOFD and tAOF timing parameters apply. Figure 83 (page 124) also shows the example where tANPD (MIN) is not satisfied because ODT HIGH does not occur until state T3. When tANPD (MIN) is not satisfied, tAOFPD timing parameters apply. ODT turn-on timing prior to entering any power-down mode is determined by the parameter tANPD, as shown in Figure 84 (page 125). At state T2, the ODT HIGH signal satisfies tANPD (MIN) prior to entering power-down mode at T5. When tANPD (MIN) is satisfied, tAOND and tAON timing parameters apply. Figure 84 (page 125) also shows the example where tANPD (MIN) is not satisfied because ODT HIGH does not occur until state T3. When tANPD (MIN) is not satisfied, tAONPD timing parameters apply. ODT turn-off timing after exiting any power-down mode is determined by the parameter tAXPD (MIN), as shown in Figure 85 (page 126). At state Ta1, the ODT LOW signal satisfies tAXPD (MIN) after exiting power-down mode at state T1. When tAXPD (MIN) is satisfied, tAOFD and tAOF timing parameters apply. Figure 85 (page 126) also shows the example where tAXPD (MIN) is not satisfied because ODT LOW occurs at state Ta0. When tAXPD (MIN) is not satisfied, tAOFPD timing parameters apply. ODT turn-on timing after exiting either slow-exit power-down mode or precharge powerdown mode is determined by the parameter tAXPD (MIN), as shown in Figure 86 (page 127). At state Ta1, the ODT HIGH signal satisfies tAXPD (MIN) after exiting powerdown mode at state T1. When tAXPD (MIN) is satisfied, tAOND and tAON timing parameters apply. Figure 86 (page 127) also shows the example where tAXPD (MIN) is not satisfied because ODT HIGH occurs at state Ta0. When tAXPD (MIN) is not satisfied, tAONPD timing parameters apply. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 121 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM ODT Timing Figure 79: ODT Timing for Entering and Exiting Power-Down Mode Synchronous Synchronous or Synchronous Asynchronous tANPD (3 tCKs) First CKE latched LOW tAXPD (8 tCKs) First CKE latched HIGH CKE Any mode except self refresh mode Applicable modes tAOND/tAOFD Active power-down fast (synchronous) Any mode except self refresh mode Active power-down slow (asynchronous) Precharge power-down (asynchronous) tAOND/tAOFD (synchronous) tAONPD/tAOFPD tAOND/tAOFD (asynchronous) Applicable timing parameters PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 122 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM ODT Timing MRS Command to ODT Update Delay During normal operation, the value of the effective termination resistance can be changed with an EMRS set command. tMOD (MAX) updates the RTT setting. Figure 80: Timing for MRS Command to ODT Update Delay T0 Command Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 EMRS1 NOP NOP NOP NOP NOP CK# CK 2 ODT2 tMOD tAOFD tIS 0ns Internal RTT setting Old setting Undefined New setting Indicates a break in time scale Notes: 1. The LM command is directed to the mode register, which updates the information in EMR (A6, A2), that is, RTT (nominal). 2. To prevent any impedance glitch on the channel, the following conditions must be met: tAOFD must be met before issuing the LM command; ODT must remain LOW for the entire duration of the tMOD window until tMOD is met. Figure 81: ODT Timing for Active or Fast-Exit Power-Down Mode CK# T0 CK T1 tCK tCH T2 T3 T4 T5 T6 tCL Command Valid Valid Valid Valid Valid Valid Valid Address Valid Valid Valid Valid Valid Valid Valid CKE tAOND ODT tAOFD RTT tAON (MIN) tAOF (MAX) tAON (MAX) tAOF (MIN) RTT Unknown PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 123 RTT On Don’t Care Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM ODT Timing Figure 82: ODT Timing for Slow-Exit or Precharge Power-Down Modes CK# T0 CK T1 tCK tCH T2 T3 T4 T5 T6 T7 tCL Command Valid Valid Valid Valid Valid Valid Valid Valid Address Valid Valid Valid Valid Valid Valid Valid Valid CKE ODT tAONPD (MAX) tAONPD (MIN) RTT tAOFPD (MIN) tAOFPD (MAX) Transitioning RTT RTT Unknown RTT On Don’t Care Figure 83: ODT Turn-Off Timings When Entering Power-Down Mode CK# T0 T1 T2 T3 T4 T5 T6 NOP NOP NOP NOP NOP NOP NOP CK Command tANPD (MIN) CKE tAOFD ODT tAOF (MAX) RTT tAOF (MIN) tAOFPD (MAX) ODT RTT tAOFPD (MIN) Transitioning RTT PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 124 RTT Unknown RTT ON Don’t Care Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM ODT Timing Figure 84: ODT Turn-On Timing When Entering Power-Down Mode CK# T0 T1 T2 T3 T4 T5 T6 NOP NOP NOP NOP NOP NOP NOP CK Command tANPD (MIN) CKE ODT tAOND tAON (MAX) RTT tAON (MIN) ODT tAONPD (MAX) RTT tAONPD (MIN) Transitioning RTT PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 125 RTT Unknown RTT On Don’t Care Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM ODT Timing Figure 85: ODT Turn-Off Timing When Exiting Power-Down Mode CK# T0 T1 T2 T3 T4 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK Command tAXPD (MIN) CKE tCKE (MIN) tAOFD ODT tAOF (MAX) RTT tAOF (MIN) tAOFPD (MAX) ODT RTT tAOFPD (MIN) Indicates a break in time scale PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN RTT Unknown 126 RTT On Transitioning RTT Don’t Care Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 2Gb: x4, x8, x16 1.55V DDR2 SDRAM ODT Timing Figure 86: ODT Turn-On Timing When Exiting Power-Down Mode CK# T0 T1 T2 T3 T4 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK Command tAXPD (MIN) CKE tCKE (MIN) ODT tAOND tAON (MAX) RTT tAON (MIN) ODT tAONPD (MAX) RTT tAONPD (MIN) Indicates a break in time scale RTT Unknown RTT On Transitioning RTT Don’t Care 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef844ec98c 2gbddr2_1.55V.pdf – Rev. A 1/11 EN 127 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved.
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