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MT48LC64M4A2P-7E:G

MT48LC64M4A2P-7E:G

  • 厂商:

    MICRON(镁光)

  • 封装:

    TSOP54

  • 描述:

    IC DRAM 256MBIT PAR 54TSOP II

  • 数据手册
  • 价格&库存
MT48LC64M4A2P-7E:G 数据手册
256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal, pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full page • Auto precharge, includes concurrent auto precharge and auto refresh modes • Self refresh mode (not available on AT devices) • Auto refresh – 64ms, 8192-cycle refresh (commercial and industrial) – 16ms, 8192-cycle refresh (automotive) • LVTTL-compatible inputs and outputs • Single 3.3V ±0.3V power supply Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Marking • Configurations – 64 Meg x 4 (16 Meg x 4 x 4 banks) – 32 Meg x 8 (8 Meg x 8 x 4 banks) – 16 Meg x 16 (4 Meg x 16 x 4 banks) • Write recovery (tWR) – tWR = 2 CLK • Plastic package – OCPL1 – 54-pin TSOP II OCPL 1 (400 mil) (standard) – 54-pin TSOP II OCPL 1 (400 mil) Pb-free – 60-ball TFBGA (x4, x8) (8mm x 16mm) – 60-ball TFBGA (x4, x8) (8mm x 16mm) Pb-free – 54-ball VFBGA (x16) (8mm x 14 mm) – 54-ball VFBGA (x16) (8mm x 14 mm) Pb-free – 54-ball VFBGA (x16) (8mm x 8 mm) – 54-ball VFBGA (x16) (8mm x 8 mm) Pb-free • Timing – cycle time – 6ns @ CL = 3 (x8, x16 only) – 7.5ns @ CL = 3 (PC133) – 7.5ns @ CL = 2 (PC133) • Self refresh – Standard – Low power • Operating temperature range – Commercial (0˚C to +70˚C) – Industrial (–40˚C to +85˚C) – Automotive (–40˚C to +105˚C) • Revision 1 1. 2. 3. 4. 64M4 32M8 16M16 A2 TG P FB BB FG2 BG2 F43 B43 -6A -752 -7E None L2, 4 None IT AT4 :D/:G Off-center parting line. Only available on Revision D. Only available on Revision G. Contact Micron for availability. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 256Mb: x4, x8, x16 SDRAM Features Table 1: Key Timing Parameters CL = CAS (READ) latency Speed Grade Clock Frequency (MHz) Target tRCD-tRP-CL -6A 167 3-3-3 18 18 18 -75 133 3-3-3 20 20 20 -7E 133 2-2-2 15 15 15 tRCD (ns) tRP (ns) CL (ns) Table 2: Address Table Parameter 64 Meg x 4 32 Meg x 8 16 Meg x 16 Configuration 16 Meg x 4 x 4 banks 8 Meg x 8 x 4 banks 4 Meg x 16 x 4 banks Refresh count 8K 8K 8K Row addressing 8K A[12:0] 8K A[12:0] 8K A[12:0] Bank addressing 4 BA[1:0] 4 BA[1:0] 4 BA[1:0] 2K A[9:0], A11 1K A[9:0] 512 A[8:0] Column addressing Table 3: 256Mb SDR Part Numbering Part Numbers Note: Architecture Package MT48LC64M4A2TG 64 Meg x 4 54-pin TSOP II MT48LC64M4A2P 64 Meg x 4 54-pin TSOP II MT48LC64M4A2FB1 64 Meg x 4 60-ball FBGA MT48LC64M4A2BB1 64 Meg x 4 60-ball FBGA MT48LC32M8A2TG 32 Meg x 8 54-pin TSOP II MT48LC32M8A2P 32 Meg x 8 54-pin TSOP II MT48LC32M8A2FB1 32 Meg x 8 60-ball FBGA MT48LC32M8A2BB1 32 Meg x 8 60-ball FBGA MT48LC16M16A2TG 16 Meg x 16 54-pin TSOP II MT48LC16M16A2P 16 Meg x 16 54-pin TSOP II MT48LC16M16A2FG 16 Meg x 16 54-ball FBGA MT48LC16M16A2BG 16 Meg x 16 54-ball FBGA 1. FBGA Device Decoder: www.micron.com/decoder. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Features Contents Important Notes and Warnings ......................................................................................................................... 8 General Description ......................................................................................................................................... 8 Automotive Temperature .............................................................................................................................. 9 Functional Block Diagrams ............................................................................................................................. 10 Pin and Ball Assignments and Descriptions ..................................................................................................... 13 Package Dimensions ....................................................................................................................................... 17 Temperature and Thermal Impedance ............................................................................................................ 21 Electrical Specifications .................................................................................................................................. 25 Electrical Specifications – IDD Parameters ........................................................................................................ 27 Electrical Specifications – AC Operating Conditions ......................................................................................... 29 Functional Description ................................................................................................................................... 32 Commands .................................................................................................................................................... 33 COMMAND INHIBIT .................................................................................................................................. 33 NO OPERATION (NOP) ............................................................................................................................... 34 LOAD MODE REGISTER (LMR) ................................................................................................................... 34 ACTIVE ...................................................................................................................................................... 34 READ ......................................................................................................................................................... 35 WRITE ....................................................................................................................................................... 36 PRECHARGE .............................................................................................................................................. 37 BURST TERMINATE ................................................................................................................................... 37 REFRESH ................................................................................................................................................... 38 AUTO REFRESH ..................................................................................................................................... 38 SELF REFRESH ....................................................................................................................................... 38 Truth Tables ................................................................................................................................................... 39 Initialization .................................................................................................................................................. 44 Mode Register ................................................................................................................................................ 46 Burst Length .............................................................................................................................................. 48 Burst Type .................................................................................................................................................. 48 CAS Latency ............................................................................................................................................... 50 Operating Mode ......................................................................................................................................... 50 Write Burst Mode ....................................................................................................................................... 50 Bank/Row Activation ...................................................................................................................................... 51 READ Operation ............................................................................................................................................. 52 WRITE Operation ........................................................................................................................................... 61 Burst Read/Single Write .............................................................................................................................. 68 PRECHARGE Operation .................................................................................................................................. 69 Auto Precharge ........................................................................................................................................... 69 AUTO REFRESH Operation ............................................................................................................................. 81 SELF REFRESH Operation ............................................................................................................................... 83 Power-Down .................................................................................................................................................. 85 Clock Suspend ............................................................................................................................................... 86 Revision History ............................................................................................................................................. 89 Rev. W – 05/15 ............................................................................................................................................ 89 Rev. W – 09/14 ............................................................................................................................................ 89 Rev. V – 1/14, 8/14 ...................................................................................................................................... 89 Rev. U – 05/13 ............................................................................................................................................. 89 Rev. T – 03/13 ............................................................................................................................................. 89 Rev. S – 12/12 ............................................................................................................................................. 89 Rev. R – 10/12 ............................................................................................................................................. 89 Rev. Q – 02/12 ............................................................................................................................................. 89 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Features Rev. P – 12/11 ............................................................................................................................................. Rev. O – 07/11 ............................................................................................................................................. Rev. N – 01/10 ............................................................................................................................................. Rev. M – 11/08 ............................................................................................................................................ Rev. L – 08/07 ............................................................................................................................................. Rev. K – 02/07 ............................................................................................................................................. Rev. K – 06/06 ............................................................................................................................................. Rev. J – 03/05 .............................................................................................................................................. Rev. H – 02/05 ............................................................................................................................................. Rev. H – 10/04 ............................................................................................................................................. Rev. G – 08/03 ............................................................................................................................................. Rev. F – 01/03 ............................................................................................................................................. Rev. E – 03/02 ............................................................................................................................................. Rev. D – 07/01 ............................................................................................................................................. Rev. C – 03/01 ............................................................................................................................................. Rev. B – 10/00 ............................................................................................................................................. Rev. A – 11/99 ............................................................................................................................................. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 4 89 90 90 90 90 91 91 91 91 91 91 91 92 92 92 93 93 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Features List of Figures Figure 1: 64 Meg x 4 Functional Block Diagram ............................................................................................... Figure 2: 32 Meg x 8 Functional Block Diagram ............................................................................................... Figure 3: 16 Meg x 16 Functional Block Diagram ............................................................................................. Figure 4: 54-Pin TSOP (Top View) .................................................................................................................. Figure 5: 60-Ball FBGA (Top View) ................................................................................................................. Figure 6: 54-Ball VFBGA (Top View) ............................................................................................................... Figure 7: 54-Pin Plastic TSOP "TG/P" (400 mil) ............................................................................................... Figure 8: 60-Ball TFBGA "BB/FB" (8mm x 16mm) (x4, x8) ............................................................................... Figure 9: 54-Ball VFBGA "BG/FG" (8mm x 14mm) (x16) .................................................................................. Figure 10: 54-Ball VFBGA "B4/F4" (8mm x 8mm) (x16) ................................................................................... Figure 11: Example: Temperature Test Point Location, 54-Pin TSOP (Top View) ............................................... Figure 12: Example: Temperature Test Point Location, 54-Ball VFBGA (Top View) ............................................ Figure 13: Example: Temperature Test Point Location, 60-Ball FBGA (Top View) .............................................. Figure 14: ACTIVE Command ........................................................................................................................ Figure 15: READ Command ........................................................................................................................... Figure 16: WRITE Command ......................................................................................................................... Figure 17: PRECHARGE Command ................................................................................................................ Figure 18: Initialize and Load Mode Register .................................................................................................. Figure 19: Mode Register Definition ............................................................................................................... Figure 20: CAS Latency .................................................................................................................................. Figure 21: Example: Meeting tRCD (MIN) When 2 < tRCD (MIN)/tCK < 3 .......................................................... Figure 22: Consecutive READ Bursts .............................................................................................................. Figure 23: Random READ Accesses ................................................................................................................ Figure 24: READ-to-WRITE ............................................................................................................................ Figure 25: READ-to-WRITE With Extra Clock Cycle ......................................................................................... Figure 26: READ-to-PRECHARGE .................................................................................................................. Figure 27: Terminating a READ Burst ............................................................................................................. Figure 28: Alternating Bank Read Accesses ..................................................................................................... Figure 29: READ Continuous Page Burst ......................................................................................................... Figure 30: READ – DQM Operation ................................................................................................................ Figure 31: WRITE Burst ................................................................................................................................. Figure 32: WRITE-to-WRITE .......................................................................................................................... Figure 33: Random WRITE Cycles .................................................................................................................. Figure 34: WRITE-to-READ ............................................................................................................................ Figure 35: WRITE-to-PRECHARGE ................................................................................................................. Figure 36: Terminating a WRITE Burst ............................................................................................................ Figure 37: Alternating Bank Write Accesses ..................................................................................................... Figure 38: WRITE – Continuous Page Burst ..................................................................................................... Figure 39: WRITE – DQM Operation ............................................................................................................... Figure 40: READ With Auto Precharge Interrupted by a READ ......................................................................... Figure 41: READ With Auto Precharge Interrupted by a WRITE ........................................................................ Figure 42: READ With Auto Precharge ............................................................................................................ Figure 43: READ Without Auto Precharge ....................................................................................................... Figure 44: Single READ With Auto Precharge .................................................................................................. Figure 45: Single READ Without Auto Precharge ............................................................................................. Figure 46: WRITE With Auto Precharge Interrupted by a READ ........................................................................ Figure 47: WRITE With Auto Precharge Interrupted by a WRITE ...................................................................... Figure 48: WRITE With Auto Precharge ........................................................................................................... Figure 49: WRITE Without Auto Precharge ..................................................................................................... Figure 50: Single WRITE With Auto Precharge ................................................................................................. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 5 10 11 12 13 14 15 17 18 19 20 23 23 24 34 35 36 37 45 47 50 51 53 54 55 56 56 57 58 59 60 61 62 63 63 64 65 66 67 68 70 71 72 73 74 75 76 76 77 78 79 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Features Figure 51: Figure 52: Figure 53: Figure 54: Figure 55: Figure 56: Figure 57: Single WRITE Without Auto Precharge ............................................................................................ Auto Refresh Mode ........................................................................................................................ Self Refresh Mode .......................................................................................................................... Power-Down Mode ........................................................................................................................ Clock Suspend During WRITE Burst ............................................................................................... Clock Suspend During READ Burst ................................................................................................. Clock Suspend Mode ..................................................................................................................... PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 6 80 82 84 85 86 87 88 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Features List of Tables Table 1: Key Timing Parameters ....................................................................................................................... 2 Table 2: Address Table ..................................................................................................................................... 2 Table 3: 256Mb SDR Part Numbering ............................................................................................................... 2 Table 4: Pin and Ball Descriptions .................................................................................................................. 16 Table 5: Temperature Limits .......................................................................................................................... 21 Table 6: Thermal Impedance Simulated Values ............................................................................................... 22 Table 7: Absolute Maximum Ratings .............................................................................................................. 25 Table 8: DC Electrical Characteristics and Operating Conditions ..................................................................... 25 Table 9: Capacitance ..................................................................................................................................... 26 Table 10: IDD Specifications and Conditions (x4, x8, x16) Revision D ................................................................ 27 Table 11: IDD Specifications and Conditions (x4, x8, x16) Revision G ................................................................ 27 Table 12: Electrical Characteristics and Recommended AC Operating Conditions ............................................ 29 Table 13: AC Functional Characteristics ......................................................................................................... 30 Table 14: Truth Table – Commands and DQM Operation ................................................................................. 33 Table 15: Truth Table – Current State Bank n, Command to Bank n .................................................................. 39 Table 16: Truth Table – Current State Bank n, Command to Bank m ................................................................. 41 Table 17: Truth Table – CKE ........................................................................................................................... 43 Table 18: Burst Definition Table ..................................................................................................................... 49 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Important Notes and Warnings Important Notes and Warnings Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions. This document supersedes and replaces all information supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorized by Micron. Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting from any use of non-automotive-grade products in automotive applications. Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of the Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron component for any critical application, customer and distributor shall indemnify and hold harmless Micron and its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the Micron product. Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems, applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included in customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component. Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort, warranty, breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly authorized representative. General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 67,108,864-bit banks is organized as 8192 rows by 2048 columns by 4 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM General Description bits. Each of the x8’s 67,108,864-bit banks is organized as 8192 rows by 1024 columns by 8 bits. Each of the x16’s 67,108,864-bit banks is organized as 8192 rows by 512 columns by 16 bits. Read and write accesses to the SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA[1:0] select the bank; A[12:0] select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. The SDRAM provides for programmable read or write burst lengths (BL) of 1, 2, 4, or 8 locations, or the full page, with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The 256Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a highspeed, fully random access. Precharging one bank while accessing one of the other three banks will hide the PRECHARGE cycles and provide seamless, high-speed, random-access operation. The 256Mb SDRAM is designed to operate in 3.3V memory systems. An auto refresh mode is provided, along with a power-saving, power-down mode. All inputs and outputs are LVTTL-compatible. SDRAMs offer substantial advances in DRAM operating performance, including the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time, and the capability to randomly change column addresses on each clock cycle during a burst access. Automotive Temperature The automotive temperature (AT) option adheres to the following specifications: • 16ms refresh rate • Self refresh not supported • Ambient and case temperature cannot be less than –40°C or greater than +105°C PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Functional Block Diagrams Functional Block Diagrams Figure 1: 64 Meg x 4 Functional Block Diagram CKE CLK COMMAND DECODE CS# WE# CAS# RAS# CONTROL LOGIC BANK3 BANK2 BANK1 MODE REGISTER REFRESH 13 COUNTER 12 ROWADDRESS MUX 13 13 BANK0 ROWADDRESS LATCH & DECODER 8192 BANK0 MEMORY ARRAY (8192 x 2048 x 4) 1 DQM SENSE AMPLIFIERS 4 8192 I/O GATING DQM MASK LOGIC READ DATA LATCH WRITE DRIVERS 2 A[12:0] BA[1:0] 15 ADDRESS REGISTER 2 BANK CONTROL LOGIC DATA OUTPUT REGISTER 4 4 2048 (x4) 1 DQ[3:0] DATA INPUT REGISTER COLUMN DECODER 11 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN COLUMNADDRESS COUNTER/ LATCH 11 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Functional Block Diagrams Figure 2: 32 Meg x 8 Functional Block Diagram CKE CLK COMMAND DECODE CS# WE# CAS# RAS# CONTROL LOGIC BANK3 BANK2 BANK1 MODE REGISTER REFRESH 13 COUNTER 12 ROWADDRESS MUX 13 13 BANK0 ROWADDRESS LATCH & DECODER 8192 BANK0 MEMORY ARRAY (8192 x 1024 x 8) 1 DQM SENSE AMPLIFIERS 8 8192 I/O GATING DQM MASK LOGIC READ DATA LATCH WRITE DRIVERS 2 A[12:0] BA[1:0] 15 ADDRESS REGISTER 2 BANK CONTROL LOGIC DATA OUTPUT REGISTER 8 8 1024 (x8) 1 DQ[7:0] DATA INPUT REGISTER COLUMN DECODER 10 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN COLUMNADDRESS COUNTER/ LATCH 10 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Functional Block Diagrams Figure 3: 16 Meg x 16 Functional Block Diagram CKE CLK COMMAND DECODE CS# WE# CAS# RAS# CONTROL LOGIC BANK3 BANK2 BANK1 MODE REGISTER REFRESH 13 COUNTER 12 ROWADDRESS MUX 13 13 BANK0 ROWADDRESS LATCH & DECODER 8192 BANK0 MEMORY ARRAY (8192 x 512 x 16) 2 SENSE AMPLIFIERS 16 8192 I/O GATING DQM MASK LOGIC READ DATA LATCH WRITE DRIVERS 2 A[12:0] BA[1:0] 15 ADDRESS REGISTER 2 BANK CONTROL LOGIC DQML, DQMH DATA OUTPUT REGISTER 16 16 512 (x16) 2 DQ[15:0] DATA INPUT REGISTER COLUMN DECODER 9 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN COLUMNADDRESS COUNTER/ LATCH 9 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Pin and Ball Assignments and Descriptions Pin and Ball Assignments and Descriptions Figure 4: 54-Pin TSOP (Top View) x4 x8 NC NC DQ0 NC NC NC DQ1 NC NC - VDD DQ0 DQ0 VDDQ DQ1 NC DQ2 DQ1 VSSQ DQ3 NC DQ4 DQ2 VDDQ DQ5 NC DQ6 DQ3 VSSQ DQ7 NC VDD NC DQML WE# CAS# RAS# CS# BA0 BA1 A10 A0 A1 A2 A3 VDD - Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN x16 x16 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS NC DQMH CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS x8 x4 DQ7 NC DQ6 NC DQ5 NC DQ4 NC DQM - NC NC DQ3 NC NC NC DQ2 NC DQM - 1. The # symbol indicates that the signal is active LOW. A dash (-) indicates that the x8 and x4 pin function is the same as the x16 pin function. 2. Package may or may not be assembled with a location notch. 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Pin and Ball Assignments and Descriptions Figure 5: 60-Ball FBGA (Top View) 64 Meg x 4 SDRAM 8mm x 16mm FB 7 8 7 8 VSS VDD NC VSS VDD DQ0 NC VSSQ VDDQ NC VSSQ VDDQ NC C VDDQ DQ3 C VDDQ DQ6 DQ1 VSSQ D NC NC D DQ5 NC NC DQ2 E VDDQ NC E NC VSSQ VDDQ NC DQ2 DQ1 VSSQ F VDDQ DQ4 DQ3 VSSQ NC NC NC NC G NC NC NC NC H NC VSS VDD NC H NC VSS VDD NC J NC DQM WE# CAS# J NC DQM WE# CAS# K NC CK RAS# NC K NC CK RAS# NC L A12 CKE NC CS# L A12 CKE NC CS# M A11 A9 BA1 BA0 M A11 A9 BA1 BA0 N A8 A7 A0 A10 N A8 A7 A0 A10 P A6 A5 A2 A1 P A6 A5 A2 A1 R A4 VSS VDD A3 R A4 VSS VDD A3 1 2 A NC B 3 4 5 6 32 Meg x 8 SDRAM 8mm x 16mm FB 1 2 A DQ7 NC B DQ0 VSSQ NC NC NC VSSQ F VDDQ G Depopulated Balls PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 3 4 5 6 Depopulated Balls 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Pin and Ball Assignments and Descriptions Figure 6: 54-Ball VFBGA (Top View) 5 7 8 9 VSSQ VDDQ DQ0 VDD DQ13 VDDQ VSSQ DQ2 DQ1 DQ12 DQ11 VSSQ VDDQ DQ4 DQ3 D DQ10 DQ9 VDDQ VSSQ DQ6 DQ5 E DQ8 NC VSS VDD LDQM DQ7 F UDQM CLK CKE CAS# RAS# WE# G A12 A11 A9 BA0 BA1 CS# H A8 A7 A6 A0 A1 A10 J VSS A5 A4 A3 A2 VDD 1 2 3 A VSS DQ15 B DQ14 C 4 6 Depopulated Balls Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. The balls at A4, A5, and A6 are absent from the physical package. They are included to illustrate that rows 4, 5, and 6 exist, but contain no solder balls. 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Pin and Ball Assignments and Descriptions Table 4: Pin and Ball Descriptions Symbol Type Description CLK Input Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on the positive edge of CLK. CLK also increments the internal burst counter and controls the output registers. CKE Input Clock enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. Deactivating the clock provides precharge power-down and SELF REFRESH operation (all banks idle), active power-down (row active in any bank), or CLOCK SUSPEND operation (burst/access in progress). CKE is synchronous except after the device enters power-down and self refresh modes, where CKE becomes asynchronous until after exiting the same mode. The input buffers, including CLK, are disabled during power-down and self refresh modes, providing low standby power. CKE may be tied HIGH. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH, but READ/WRITE bursts already in progress will continue, and DQM operation will retain its DQ mask capability while CS# is HIGH. CS# provides for external bank selection on systems with multiple banks. CS# is considered part of the command code. CAS#, RAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered. x4, x8: DQM Input Input/output mask: DQM is sampled HIGH and is an input mask signal for write accesses and an output enable signal for read accesses. Input data is masked during a WRITE cycle. The output buffers are High-Z (two-clock latency) during a READ cycle. LDQM corresponds to DQ[7:0], and UDQM corresponds to DQ[15:8]. LDQM and UDQM are considered same-state when referenced as DQM. BA[1:0] Input Bank address input(s): BA[1:0] define to which bank the ACTIVE, READ, WRITE, or PRECHARGE command is being applied. A[12:0] Input Address inputs: A[12:0] are sampled during the ACTIVE command (row address A[12:0]) and READ or WRITE command (column address A[9:0] and A11 for x4; A[9:0] for x8; A[8:0] for x16; with A10 defining auto precharge) to select one location out of the memory array in the respective bank. A10 is sampled during a PRECHARGE command to determine if all banks are to be precharged (A10 HIGH) or bank selected by BA[1:0] (LOW). The address inputs also provide the op-code during a LOAD MODE REGISTER command. x16: DQ[15:0] I/O Data input/output: Data bus for x16 (pins 4, 7, 10, 13, 42, 45, 48, and 51 are NC for x8; and pins 2, 4, 7, 8, 10, 13, 42, 45, 47, 48, 51, and 53 are NC for x4). x8: DQ[7:0] I/O Data input/output: Data bus for x8 (pins 2, 8, 47, 53 are NC for x4). x4: DQ[3:0] I/O Data input/output: Data bus for x4. VDDQ Supply DQ power: DQ power to the die for improved noise immunity. VSSQ Supply DQ ground: DQ ground to the die for improved noise immunity. VDD Supply Power supply: +3.3V ±0.3V. VSS Supply NC – x16: DQML, DQMH LDQM, UDQM (54-ball) PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Ground. These should be left unconnected. For x4 and x8 parts, G1 is a no connect, but may be used as A12 in future designs. 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Package Dimensions Package Dimensions Figure 7: 54-Pin Plastic TSOP "TG/P" (400 mil) 0.10 2X 2.28 Pin #1 ID 1.2 MAX 0.375 ±0.075 TYP 2X R 0.75 22.22 ±0.08 0.80 TYP (for reference only) 2X R 1.00 22.42 Package may or may not be assembled with a location notch. 0.71 Plated lead finish: 90% Sn, 10% Pb or 100%Sn Plastic package material: epoxy novolac Package width and length do not include mold protrusion. Allowable protrusion is 0.25 per side. 10.16 ±0.08 11.76 ±0.20 Gage plane Package may or may not be assembled with a location notch. 0.15 0.25 0.10 +0.03 -0.02 See detail A +0.10 -0.05 0.50 ±0.10 0.80 Detail A Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. All dimensions are in millimeters. 2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side. 3. 2X means the notch is present in two locations (both ends of the device). 4. Package may or may not be assembled with a location notch. 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Package Dimensions Figure 8: 60-Ball TFBGA "BB/FB" (8mm x 16mm) (x4, x8) Seating plane A 60X Ø0.45 Dimensions apply to solder balls post-reflow on Ø0.33 NSMD ball pads. 0.12 A Ball A1 ID 8 7 Ball A1 ID 2 1 A B C D E F G H J K L M N P R 16 ±0.1 11.2 CTR 0.8 TYP 1.1 ±0.1 0.8 TYP 0.25 MIN 5.6 CTR 8 ±0.1 Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. 2. 3. 4. All dimensions are in millimeters. Recommended pad size for PCB is 0.33mm ±0.025mm. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu) or 62% Sn, 2% Ag, 36% Pb. Topside part-marking decoder is available at www.micron.com/decoder. 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Package Dimensions Figure 9: 54-Ball VFBGA "BG/FG" (8mm x 14mm) (x16) 0.65 ±0.05 SEATING PLANE C 0.12 C 6.40 1.00 MAX BALL A1 ID 0.80 TYP 54X Ø0.45 SOLDER BALL DIAMETER REFERS TO POST REFLOW CONDITION. THE PREREFLOW DIAMETER IS Ø0.42 BALL A9 BALL A1 ID BALL A1 0.80 TYP CL 6.40 14.00 ±0.10 3.20 ±0.05 7.00 ±0.05 3.20 ±0.05 CL 4.00 ±0.05 MOLD COMPOUND: EPOXY NOVOLAC SUBSTRATE MATERIAL: PLASTIC LAMINATE 8.00 ±0.10 SOLDER BALL MATERIAL: 62% Sn, 36% Pb, 2% Ag OR 96.5% Sn, 3%Ag, 0.5% Cu SOLDER MASK DEFINED BALL PADS: Ø 0.40 Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. 2. 3. 4. All dimensions are in millimeters. Recommended pad size for PCB is 0.4mm ±0.065mm. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu) or 62% Sn, 2% Ag, 36% Pb. Topside part-marking decoder is available at www.micron.com/decoder. 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Package Dimensions Figure 10: 54-Ball VFBGA "B4/F4" (8mm x 8mm) (x16) Seating plane A 54X Ø0.45 Dimensions apply to solder balls postreflow on∅Ø0.40 SMD ball pads. 9 0.12 A Ball A1 ID (covered by SR) 8 7 3 2 Ball A1 ID 1 A B C D 6.4 CTR E 8 ±0.1 F G H 0.8 TYP J 0.9 ±0.1 0.8 TYP 6.4 CTR 0.25 MIN 8 ±0.1 Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. 2. 3. 4. All dimensions are in millimeters. Recommended pad size for PCB is 0.4mm ±0.065mm. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu) or 62% Sn, 2% Ag, 36% Pb. Topside part-marking decoder is available at www.micron.com/decoder. 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Temperature and Thermal Impedance Temperature and Thermal Impedance It is imperative that the SDRAM device’s temperature specifications, shown in Table 5 (page 21), be maintained to ensure the junction temperature is in the proper operating range to meet data sheet specifications. An important step in maintaining the proper junction temperature is using the device’s thermal impedances correctly. The thermal impedances are listed in Table 6 (page 22) for the applicable die revision and packages being made available. These thermal impedance values vary according to the density, package, and particular design used for each device. Incorrectly using thermal impedances can produce significant errors. Read Micron technical note TN-00-08, “Thermal Applications” prior to using the thermal impedances listed in Table 6 (page 22). To ensure the compatibility of current and future designs, contact Micron Applications Engineering to confirm thermal impedance values. The SDRAM device’s safe junction temperature range can be maintained when the T C specification is not exceeded. In applications where the device’s ambient temperature is too high, use of forced air and/or heat sinks may be required to satisfy the case temperature specifications. Table 5: Temperature Limits Parameter Operating case temperature Junction temperature Symbol Min Max Unit Notes TC 0 80 °C 1, 2, 3, 4 Industrial –40 90 Automotive –40 105 °C 3 °C 3, 5 Commercial 0 85 Industrial –40 95 Automotive –40 110 0 70 Commercial Ambient temperature TJ Commercial TA Industrial –40 85 Automotive –40 105 – 260 Peak reflow temperature Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN TPEAK °C 1. MAX operating case temperature, TC, is measured in the center of the package on the top side of the device, as shown in Figure 11 (page 23), Figure 12 (page 23), and Figure 13 (page 24). 2. Device functionality is not guaranteed if the device exceeds maximum TC during operation. 3. All temperature specifications must be satisfied. 4. The case temperature should be measured by gluing a thermocouple to the top-center of the component. This should be done with a 1mm bead of conductive epoxy, as defined by the JEDEC EIA/JESD51 standards. Take care to ensure that the thermocouple bead is touching the case. 5. Operating ambient temperature surrounding the package. 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Temperature and Thermal Impedance Table 6: Thermal Impedance Simulated Values Die Revision D ˆ JA (°C/W) Airflow = 1m/s ˆ JA (°C/W) Airflow = 2m/s ˆ JB (°C/W) ˆ JC (°C/W) Package Substrate 54-pin TSOP (TG, P) Low Conductivity 81 63.8 57.6 45.3 High Conductivity 55 47.3 44.5 39.1 Low Conductivity 64.9 50.8 44.8 31.4 High Conductivity 51.5 41.6 38.1 31.4 Low Conductivity 67 51.2 47.8 19.7 High Conductivity 40.9 35.1 32.2 18.6 Low Conductivity 122.3 105.6 98.1 89.5 High Conductivity 101.9 93.5 88.8 87.6 Low Conductivity 96.9 81.9 81.9 69.5 High Conductivity 74.0 66.3 62.7 60.7 Low Conductivity 68.8 55.9 51.1 42.1 High Conductivity 47.9 42.0 39.9 34.9 54-ball VFBGA (BG, FG) 60-ball FBGA (BB, FB) G ˆ JA (°C/W) Airflow = 0m/s 54-pin TSOP (TG, P) 54-ball VFBGA (B4, F4) 60-ball FBGA (BB, FB) Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 10.3 3.2 6.7 20.7 11.5 10.9 1. For designs expected to last beyond the die revision listed, contact Micron Applications Engineering to confirm thermal impedance values. 2. Thermal resistance data is sampled from multiple lots, and the values should be viewed as typical. 3. These are estimates; actual results may vary. 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Temperature and Thermal Impedance Figure 11: Example: Temperature Test Point Location, 54-Pin TSOP (Top View) 22.22mm 11.11mm Test point 10.16mm 5.08mm Note: 1. Package may or may not be assembled with a location notch. Figure 12: Example: Temperature Test Point Location, 54-Ball VFBGA (Top View) 8.00mm 4.00mm Test point 14.00mm 7.00mm PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Temperature and Thermal Impedance Figure 13: Example: Temperature Test Point Location, 60-Ball FBGA (Top View) 8.00mm 4.00mm Test point 16.00mm 8.00mm PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Electrical Specifications Electrical Specifications Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Table 7: Absolute Maximum Ratings Voltage/Temperature Symbol Min Max Unit Notes Voltage on VDD/VDDQ supply relative to VSS VDD/VDDQ –1 4.6 V 1 Voltage on inputs, NC, or I/O balls relative to VSS VIN –1 4.6 Storage temperature (plastic) TSTG –55 150 °C – – 1 W Power dissipation Note: 1. VDD and VDDQ must be within 300mV of each other at all times. VDDQ must not exceed VDD. Table 8: DC Electrical Characteristics and Operating Conditions Notes 1–3 apply to all parameters and conditions; VDD/VDDQ = 3.3V ±0.3V Parameter/Condition Symbol Min Max Unit VDD, VDDQ 3 3.6 V Input high voltage: Logic 1; All inputs VIH 2 VDD + 0.3 V 4 Input low voltage: Logic 0; All inputs VIL –0.3 0.8 V 4 Output high voltage: IOUT = –4mA VOH 2.4 – V Output low voltage: IOUT = 4mA VOL – 0.4 V IL –5 5 ˩A IOZ –5 5 ˩A Supply voltage Input leakage current: Any input 0V ื VIN ื VDD (All other balls not under test = 0V) Output leakage current: DQ are disabled; 0V ื VOUT ื VDDQ Operating temperature: Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Commercial TA 0 70 ˚C Industrial TA –40 85 ˚C Automotive TA –40 105 ˚C Notes 1. All voltages referenced to VSS. 2. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range is ensured; (0°C ื TA ื +70°C (commercial), –40°C ื TA ื +85°C (industrial), and –40°C ื TA ื +105°C (automotive)). 3. An initial pause of 100˩s is required after power-up, followed by two AUTO REFRESH commands, before proper device operation is ensured. (VDD and VDDQ must be powered up simultaneously. VSS and VSSQ must be at same potential.) The two AUTO REFRESH command wake-ups should be repeated any time the tREF refresh requirement is exceeded. 4. VIH overshoot: VIH,max = VDDQ + 2V for a pulse width ื 3ns, and the pulse width cannot be greater than one-third of the cycle rate. VIL undershoot: VIL,min = –2V for a pulse width ื3ns. 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Electrical Specifications Table 9: Capacitance Note 1 applies to all parameters and conditions Package Parameter TSOP package FBGA package Min Max Unit Notes Input capacitance: CLK CL1 2.5 3.5 pF 2 Input capacitance: All other input-only balls CL2 2.5 3.8 pF 3 Input/output capacitance: DQ CL0 4 6 pF 4 Input capacitance: CLK CL1 1.5 3.5 pF 5 Input capacitance: All other input-only balls CL2 1.5 3.8 pF 6 Input/output capacitance: DQ CL0 3 6 pF 7 Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Symbol 1. This parameter is sampled. VDD, VDDQ = 3.3V; f = 1 MHz, TA = 25°C; pin under test biased at 1.4V. 2. PC100 specifies a maximum of 4pF. 3. PC100 specifies a maximum of 5pF. 4. PC100 specifies a maximum of 6.5pF. 5. PC133 specifies a minimum of 2.5pF. 6. PC133 specifies a minimum of 2.5pF. 7. PC133 specifies a minimum of 3.0pF. 26 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Electrical Specifications – IDD Parameters Electrical Specifications – IDD Parameters Table 10: IDD Specifications and Conditions (x4, x8, x16) Revision D Notes 1–5 apply to all parameters and conditions; VDD/VDDQ = +3.3V ±0.3V Max Parameter/Condition Symbol -6A -7E -75 Unit Notes Operating current: Active mode; Burst = 2; READ or WRITE; tRC = tRC (MIN) IDD1 135 135 125 mA 6, 7, 8, 9 Standby current: Power-down mode; All banks idle; CKE = LOW IDD2 2 2 2 mA 9 Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks active after tRCD met; No accesses in progress IDD3 40 40 40 mA 6, 8, 9, 10 Operating current: Burst mode; Page burst; READ or WRITE; All banks active IDD4 135 135 135 mA 6, 7, 8, 9 6, 7, 8, 9, 10, 11 Auto refresh current: CKE = HIGH; CS# = HIGH Self refresh current: CKE ื 0.2V tRFC = tRFC (MIN) IDD5 285 285 270 mA tRFC = 7.813˩s IDD6 3.5 3.5 3.5 mA tRFC = 1.953˩s (AT) IDD6 8 8 8 mA Standard IDD7 2.5 2.5 2.5 mA Low power (L) IDD7 – 1.5 1.5 mA 12 Table 11: IDD Specifications and Conditions (x4, x8, x16) Revision G Notes 1–5 apply to all parameters and conditions; VDD/VDDQ = +3.3V ±0.3V Max Parameter/Condition Symbol -6A -7E Unit Notes Operating current: Active mode; Burst = 2; READ or WRITE; tRC = tRC (MIN) IDD1 100 100 mA 6, 7, 8, 9 Standby current: Power-down mode; All banks idle; CKE = LOW IDD2 2.5 2.5 mA 9 Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks active after tRCD met; No accesses in progress IDD3 35 35 mA 6, 8, 9, 10 Operating current: Burst mode; Page burst; READ or WRITE; All banks active IDD4 100 100 mA 6, 7, 8, 9 Auto refresh current: CKE = HIGH; CS# = HIGH tRFC = tRFC (MIN) IDD5 150 150 mA 6, 7, 8, 9, 10, 11 Self refresh current: CKE ื 0.2V Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN tRFC = 7.813˩s IDD6 4 4 mA tRFC = 1.953˩s (AT) IDD6 8 8 mA Standard IDD7 3 3 mA Low power (L) IDD7 1.5 1.5 mA 12 1. All voltages referenced to VSS. 2. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range is ensured; (0°C ื TA ื +70°C (commercial), –40°C ื TA ื +85°C (industrial), and –40°C ื TA ื +105°C (automotive)). 3. An initial pause of 100˩s is required after power-up, followed by two AUTO REFRESH commands, before proper device operation is ensured. (VDD and VDDQ must be powered 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Electrical Specifications – IDD Parameters 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN up simultaneously. VSS and VSSQ must be at same potential.) The two AUTO REFRESH command wake-ups should be repeated any time the tREF refresh requirement is exceeded. AC operating and IDD test conditions have VIL = 0V and VIH = 3.0V using a measurement reference level of 1.5V. If the input transition time is longer than 1ns, then the timing is measured from VIL, max and VIH,min and no longer from the 1.5V midpoint. CLK should always be 1.5V referenced to crossover. Refer to Micron technical note TN-48-09. IDD specifications are tested after the device is properly initialized. IDD is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs open. The IDD current will increase or decrease proportionally according to the amount of frequency alteration for the test condition. Address transitions average one transition every two clocks. For -75, CL = 3 and tCK = 7.5ns; for -7E, CL = 2 and tCK = 7.5ns. Other input signals are allowed to transition no more than once every two clocks and are otherwise at valid VIH or VIL levels. CKE is HIGH during REFRESH command period tRFC (MIN) else CKE is LOW. The IDD6 limit is actually a nominal value and does not result in a fail value. Enables on-chip refresh and address counters. PC100 specifies a maximum of 4pF. PC100 specifies a maximum of 5pF. 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Electrical Specifications – AC Operating Conditions Electrical Specifications – AC Operating Conditions Table 12: Electrical Characteristics and Recommended AC Operating Conditions Notes 1–5 apply to all parameters and conditions -6A Parameter Access time from CLK (positive edge) -7E -75 Symbol Min Max Min Max Min Max CL = 3 tAC(3) – 5.4 – 5.4 – 5.4 Unit Notes ns 7 CL = 2 tAC(2) – 7.56 – 5.4 – 6 ns 7 CL = 1 tAC(1) – 176 – – – – ns 7 Address hold time tAH 0.8 – 0.8 – 0.8 – ns Address setup time tAS 1.5 – 1.5 – 1.5 – ns CLK high-level width tCH 2.5 – 2.5 – 2.5 – ns CLK low-level width tCL 2.5 – 2.5 – ns 2.5 – CL = 3 tCK(3) 6 – 7 – 7.5 – ns 8 CL = 2 tCK(2) 106 – 7.5 – 10 – ns 8 CL = 1 tCK(1) 206 – – – – – ns 8 CKE hold time tCKH 0.8 – 0.8 – 0.8 – ns CKE setup time tCKS 1.5 – 1.5 – 1.5 – ns CS#, RAS#, CAS#, WE#, DQM hold time tCMH 0.8 – 0.8 – 0.8 – ns CS#, RAS#, CAS#, WE#, DQM setup time tCMS 1.5 – 1.5 – 1.5 – ns Data-in hold time tDH 0.8 – 0.8 – 0.8 – ns Data-in setup time tDS 1.5 – 1.5 – 1.5 – ns CL = 3 tHZ(3) – 5.4 – 5.4 – 5.4 ns 9 CL = 2 tHZ(2) – 7.56 – 5.4 – 6 ns 9 CL = 1 tHZ(1) – 176 – – – – ns 9 Clock cycle time Data-out High-Z time Data-out Low-Z time tLZ 1 – 1 – 1 – ns Data-out hold time (load) tOH 3 – 3 – 3 – ns Data-out hold time (no load) tOHn 1.8 – 1.8 – 1.8 – ns ACTIVE-to-PRECHARGE command tRAS 42 120,000 37 120,000 44 120,000 ns tRC 60 – 60 – 66 – ns ACTIVE-to-READ or WRITE delay tRCD 18 – 15 – 20 – ns Refresh period (8192 rows) tREF – 64 – 64 – 64 ms – 16 – 16 – 16 ms ACTIVE-to-ACTIVE command period Refresh period – automotive (8192 rows) AUTO REFRESH period PRECHARGE command period ACTIVE bank a to ACTIVE bank b command Transition time WRITE recovery time PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN tREF AT 10 11 tRFC 60 – 66 – 66 – ns tRP 18 – 15 – 20 – ns tRRD 12 – 14 – 15 – ns tT 0.3 1.2 0.3 1.2 0.3 1.2 ns 12 tWR 1 CLK + 6ns – 1 CLK + 7ns – 1 CLK + 7.5ns – ns 13 12 – 14 – 15 – ns 14 29 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Electrical Specifications – AC Operating Conditions Table 12: Electrical Characteristics and Recommended AC Operating Conditions (Continued) Notes 1–5 apply to all parameters and conditions -6A Parameter -7E -75 Symbol Min Max Min Max Min Max tXSR 67 – 67 – 75 – Symbol -6A Exit SELF REFRESH-to-ACTIVE command Unit Notes ns 15 Table 13: AC Functional Characteristics Notes 2–5 apply to all parameters and conditions Parameter -7E -75 Unit Notes 1 tCK 16 1 tCK 16 16 Last data-in to burst STOP command tBDL READ/WRITE command to READ/WRITE command tCCD Last data-in to new READ/WRITE command tCDL 1 1 1 tCK tCKED 1 1 1 tCK 17 Data-in to ACTIVE command tDAL 5 4 5 tCK 18, 19 Data-in to PRECHARGE command tDPL 2 tCK 19, 20 DQM to input data delay tDQD 0 0 0 tCK 16 DQM to data mask during WRITEs tDQM 0 0 0 tCK 16 DQM to data High-Z during READs tDQZ 2 tCK 16 WRITE command to input data delay tDWD 0 tCK 16 LOAD MODE REGISTER command to ACTIVE or REFRESH command tMRD 2 2 2 tCK 21 CKE to clock enable or power-down exit setup mode tPED 1 1 1 tCK 17 Last data-in to PRECHARGE command tRDL 2 tCK 19, 20 3 tCK 16 16 16 CKE to clock disable or power-down entry mode Data-out High-Z from PRECHARGE command Notes: 1 1 2 2 0 2 1 1 2 2 0 2 CL = 3 tROH(3) CL = 2 tROH(2) 2 2 2 tCK CL = 1 tROH(1) 1 – – tCK 3 3 1. Minimum specifications are used only to indicate the cycle time at which proper operation over the full temperature range is ensured: 0˚C ื TA ื +70˚C (commercial) -40˚C ื TA ื +85˚C (industrial) -40˚C ื TA ื +105˚C (automotive) 2. An initial pause of 100˩s is required after power-up, followed by two AUTO REFRESH commands, before proper device operation is ensured. (VDD and VDDQ must be powered up simultaneously. VSS and VSSQ must be at same potential.) The two AUTO REFRESH command wake-ups should be repeated any time the tREF refresh requirement is exceeded. 3. In addition to meeting the transition rate specification, the clock and CKE must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 4. Outputs measured at 1.5V with equivalent load: Q 50pF PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 30 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Electrical Specifications – AC Operating Conditions 5. AC operating and IDD test conditions have VIL = 0V and VIH = 3.0V using a measurement reference level of 1.5V. If the input transition time is longer than 1ns, then the timing is measured from VIL,max and VIH,min and no longer from the 1.5V midpoint. CLK should always be 1.5V referenced to crossover. Refer to Micron technical note TN-48-09. 6. Not applicable for Revision D. 7. tAC for -75/-7E at CL = 3 with no load is 4.6ns and is guaranteed by design. 8. The clock frequency must remain constant (stable clock is defined as a signal cycling within timing constraints specified for the clock pin) during access or precharge states (READ, WRITE, including tWR, and PRECHARGE commands). CKE may be used to reduce the data rate. 9. tHZ defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. The last valid data element will meet tOH before going High-Z. 10. Parameter guaranteed by design. 11. DRAM devices should be evenly addressed when being accessed. Disproportionate accesses to a particular row address may result in reduction of the product lifetime. 12. AC characteristics assume tT = 1ns. 13. Auto precharge mode only. The precharge timing budget (tRP) begins at 6ns for -6A, 7ns for -7E, and 7.5ns for -75 after the first clock delay, after the last WRITE is executed. 14. Precharge mode only. 15. CLK must be toggled a minimum of two times during this period. 16. Required clocks are specified by JEDEC functionality and are not dependent on any timing parameter. 17. Timing is specified by tCKS. Clock(s) specified as a reference only at minimum cycle rate. 18. Timing is specified by tWR plus tRP. Clock(s) specified as a reference only at minimum cycle rate. 19. Based on tCK = 7.5ns for -75 and -7E, 6ns for -6A. 20. Timing is specified by tWR. 21. JEDEC and PC100 specify three clocks. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 31 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Functional Description Functional Description In general, 256Mb SDRAM devices (16 Meg x 4 x 4 banks, 8 Meg x 8 x 4 banks, and 4 Meg x 16 x 4 banks) are quad-bank DRAM that operate at 3.3V and include a synchronous interface. All signals are registered on the positive edge of the clock signal, CLK. Each of the x4’s 67,108,864-bit banks is organized as 8192 rows by 2048 columns by 4 bits. Each of the x8’s 67,108,864-bit banks is organized as 8192 rows by 1024 columns by 8 bits. Each of the x16’s 67,108,864-bit banks is organized as 8192 rows by 512 columns by 16 bits. Read and write accesses to the SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0 and BA1 select the bank, A[12:0] select the row). The address bits (x4: A[9:0], A11; x8: A[9:0]; x16: A[8:0]) registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. Prior to normal operation, the SDRAM must be initialized. The following sections provide detailed information covering device initialization, register definition, command descriptions, and device operation. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 32 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Commands Commands The following table provides a quick reference of available commands, followed by a written description of each command. Additional Truth Tables (Table 15 (page 39), Table 16 (page 41), and Table 17 (page 43)) provide current state/next state information. Table 14: Truth Table – Commands and DQM Operation Note 1 applies to all parameters and conditions Name (Function) CS# RAS# CAS# WE# DQM ADDR DQ Notes COMMAND INHIBIT (NOP) H X X X X X X NO OPERATION (NOP) L H H H X X X ACTIVE (select bank and activate row) L L H H X Bank/row X 2 READ (select bank and column, and start READ burst) L H L H L/H Bank/col X 3 WRITE (select bank and column, and start WRITE burst) L H L L L/H Bank/col Valid 3 BURST TERMINATE L H H L X X Active 4 PRECHARGE (Deactivate row in bank or banks) L L H L X Code X 5 AUTO REFRESH or SELF REFRESH (enter self refresh mode) L L L H X X X 6, 7 LOAD MODE REGISTER L L L L X Op-code X 8 Write enable/output enable X X X X L X Active 9 Write inhibit/output High-Z X X X X H X High-Z 9 Notes: 1. CKE is HIGH for all commands shown except SELF REFRESH. 2. A[0:n] provide row address (where An is the most significant address bit), BA0 and BA1 determine which bank is made active. 3. A[0:i] provide column address (where i = the most significant column address for a given device configuration). A10 HIGH enables the auto precharge feature (nonpersistent), while A10 LOW disables the auto precharge feature. BA0 and BA1 determine which bank is being read from or written to. 4. The purpose of the BURST TERMINATE command is to stop a data burst, thus the command could coincide with data on the bus. However, the DQ column reads a “Don’t Care” state to illustrate that the BURST TERMINATE command can occur when there is no data present. 5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: all banks precharged and BA0, BA1 are “Don’t Care.” 6. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW. 7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE. 8. A[11:0] define the op-code written to the mode register. 9. Activates or deactivates the DQ during WRITEs (zero-clock delay) and READs (two-clock delay). COMMAND INHIBIT The COMMAND INHIBIT function prevents new commands from being executed by the device, regardless of whether the CLK signal is enabled. The device is effectively deselected. Operations already in progress are not affected. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 33 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Commands NO OPERATION (NOP) The NO OPERATION (NOP) command is used to perform a NOP to the selected device (CS# is LOW). This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. LOAD MODE REGISTER (LMR) The mode registers are loaded via inputs A[n:0] (where An is the most significant address term), BA0, and BA1(see "Mode Register"). The LOAD MODE REGISTER command can only be issued when all banks are idle and a subsequent executable command cannot be issued until tMRD is met. ACTIVE The ACTIVE command is used to activate a row in a particular bank for a subsequent access. The value on the BA0, BA1 inputs selects the bank, and the address provided selects the row. This row remains active for accesses until a PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same bank. Figure 14: ACTIVE Command CLK CKE HIGH CS# RAS# CAS# WE# Address Row address BA0, BA1 Bank address Don’t Care PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 34 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Commands READ The READ command is used to initiate a burst read access to an active row. The values on the BA0 and BA1 inputs select the bank; the address provided selects the starting column location. The value on input A10 determines whether auto precharge is used. If auto precharge is selected, the row being accessed is precharged at the end of the READ burst; if auto precharge is not selected, the row remains open for subsequent accesses. Read data appears on the DQ subject to the logic level on the DQM inputs two clocks earlier. If a given DQM signal was registered HIGH, the corresponding DQ will be HighZ two clocks later; if the DQM signal was registered LOW, the DQ will provide valid data. Figure 15: READ Command CLK CKE HIGH CS# RAS# CAS# WE# Address Column address EN AP A101 DIS AP BA0, BA1 Bank address Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. EN AP = enable auto precharge, DIS AP = disable auto precharge. 35 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Commands WRITE The WRITE command is used to initiate a burst write access to an active row. The values on the BA0 and BA1 inputs select the bank; the address provided selects the starting column location. The value on input A10 determines whether auto precharge is used. If auto precharge is selected, the row being accessed is precharged at the end of the write burst; if auto precharge is not selected, the row remains open for subsequent accesses. Input data appearing on the DQ is written to the memory array, subject to the DQM input logic level appearing coincident with the data. If a given DQM signal is registered LOW, the corresponding data is written to memory; if the DQM signal is registered HIGH, the corresponding data inputs are ignored and a WRITE is not executed to that byte/column location. Figure 16: WRITE Command CLK CKE HIGH CS# RAS# CAS# WE# Address Column address EN AP A101 DIS AP BA0, BA1 Bank address Valid address Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Don’t Care 1. EN AP = enable auto precharge, DIS AP = disable auto precharge. 36 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Commands PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access a specified time (tRP) after the PRECHARGE command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is precharged, inputs BA0 and BA1 select the bank. Otherwise BA0 and BA1 are treated as “Don’t Care.” After a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands are issued to that bank. Figure 17: PRECHARGE Command CLK CKE HIGH CS# RAS# CAS# WE# Address All banks A10 Bank selected BA0, BA1 Bank address Valid address Don’t Care BURST TERMINATE The BURST TERMINATE command is used to truncate either fixed-length or continuous page bursts. The most recently registered READ or WRITE command prior to the BURST TERMINATE command is truncated. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 37 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Commands REFRESH AUTO REFRESH AUTO REFRESH is used during normal operation of the SDRAM and is analogous to CAS#-BEFORE-RAS# (CBR) refresh in conventional DRAMs. This command is nonpersistent, so it must be issued each time a refresh is required. All active banks must be precharged prior to issuing an AUTO REFRESH command. The AUTO REFRESH command should not be issued until the minimum tRP has been met after the PRECHARGE command, as shown in Bank/Row Activation (page 51). The addressing is generated by the internal refresh controller. This makes the address bits a “Don’t Care” during an AUTO REFRESH command. Regardless of device width, the 256Mb SDRAM requires 8192 AUTO REFRESH cycles every 64ms (commercial and industrial) or 16ms (automotive). Providing a distributed AUTO REFRESH command every 7.813μs (commercial and industrial) or 1.953μs (automotive) will meet the refresh requirement and ensure that each row is refreshed. Alternatively, 8192 AUTO REFRESH commands can be issued in a burst at the minimum cycle rate (tRFC), once every 64ms (commercial and industrial) or 16ms (automotive). SELF REFRESH The SELF REFRESH command can be used to retain data in the SDRAM, even if the rest of the system is powered-down. When in the self refresh mode, the SDRAM retains data without external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH command except CKE is disabled (LOW). After the SELF REFRESH command is registered, all the inputs to the SDRAM become a “Don’t Care” with the exception of CKE, which must remain LOW. After self refresh mode is engaged, the SDRAM provides its own internal clocking, causing it to perform its own AUTO REFRESH cycles. The SDRAM must remain in self refresh mode for a minimum period equal to tRAS and may remain in self refresh mode for an indefinite period beyond that. The procedure for exiting self refresh requires a sequence of commands. First, CLK must be stable (stable clock is defined as a signal cycling within timing constraints specified for the clock pin) prior to CKE going back HIGH. After CKE is HIGH, the SDRAM must have NOP commands issued (a minimum of two clocks) for tXSR because time is required for the completion of any internal refresh in progress. Upon exiting the self refresh mode, AUTO REFRESH commands must be issued at the specified intervals, as both SELF REFRESH and AUTO REFRESH utilize the row refresh counter. Self refresh is not supported on automotive temperature devices. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 38 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Truth Tables Truth Tables Table 15: Truth Table – Current State Bank n, Command to Bank n Notes 1–6 apply to all parameters and conditions Current State CS# RAS# CAS# Any Idle Row active Read (auto precharge disabled) Write (auto precharge disabled) Notes: WE# Command/Action Notes H X X X COMMAND INHIBIT (NOP/continue previous operation) L H H H NO OPERATION (NOP/continue previous operation) L L H H ACTIVE (select and activate row) L L L H AUTO REFRESH L L L L LOAD MODE REGISTER 7 L L H L PRECHARGE 8 L H L H READ (select column and start READ burst) 9 L H L L WRITE (select column and start WRITE burst) 9 L L H L PRECHARGE (deactivate row in bank or banks) 10 L H L H READ (select column and start new READ burst) 9 L H L L WRITE (select column and start WRITE burst) 9 L L H L PRECHARGE (truncate READ burst, start PRECHARGE) 10 L H H L BURST TERMINATE 11 L H L H READ (select column and start READ burst) 9 L H L L WRITE (select column and start new WRITE burst) 9 L L H L PRECHARGE (truncate WRITE burst, start PRECHARGE) 10 L H H L BURST TERMINATE 11 7 1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Table 17 (page 43)) and after tXSR has been met (if the previous state was self refresh). 2. This table is bank-specific, except where noted (for example, the current state is for a specific bank and the commands shown can be issued to that bank when in that state). Exceptions are covered below. 3. Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. 4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands, or supported commands to the other bank should be issued on any clock edge occurring during these states. Supported commands to any other bank are determined by the bank’s current state and the conditions described in this and the following table. Precharging: Starts with registration of a PRECHARGE command and ends when tRP is met. After tRP is met, the bank will be in the idle state. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 39 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Truth Tables Row activating: Starts with registration of an ACTIVE command and ends when tRCD is met. After tRCD is met, the bank will be in the row active state. Read with auto precharge enabled: Starts with registration of a READ command with auto precharge enabled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. Write with auto precharge enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. 5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must be applied on each positive clock edge during these states. Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRFC is met. After tRFC is met, the device will be in the all banks idle state. Accessing mode register: Starts with registration of a LOAD MODE REGISTER command and ends when tMRD has been met. After tMRD is met, the device will be in the all banks idle state. 6. 7. 8. 9. 10. 11. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Precharging all: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. After tRP is met, all banks will be in the idle state. All states and sequences not shown are illegal or reserved. Not bank specific; requires that all banks are idle. Does not affect the state of the bank and acts as a NOP to that bank. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. May or may not be bank specific; if all banks need to be precharged, each must be in a valid state for precharging. Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank. 40 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Truth Tables Table 16: Truth Table – Current State Bank n, Command to Bank m Notes 1–6 apply to all parameters and conditions Current State CS# RAS# CAS# Any WE# Command/Action Notes H X X X COMMAND INHIBIT (NOP/continue previous operation) L H H H NO OPERATION (NOP/continue previous operation) Idle X X X X Any command otherwise supported for bank m Row activating, active, or precharging L L H H ACTIVE (select and activate row) L H L H READ (select column and start READ burst) 7 L H L L WRITE (select column and start WRITE burst) 7 L L H L PRECHARGE L L H H ACTIVE (select and activate row) L H L H READ (select column and start new READ burst) 7, 10 L H L L WRITE (select column and start WRITE burst) 7, 11 L L H L PRECHARGE L L H H ACTIVE (select and activate row) L H L H READ (select column and start READ burst) 7, 12 L H L L WRITE (select column and start new WRITE burst) 7, 13 L L H L PRECHARGE L L H H ACTIVE (select and activate row) L H L H READ (select column and start new READ burst) 7, 8, 14 L H L L WRITE (select column and start WRITE burst) 7, 8, 15 L L H L PRECHARGE L L H H ACTIVE (select and activate row) L H L H READ (select column and start READ burst) 7, 8, 16 L H L L WRITE (select column and start new WRITE burst) 7, 8, 17 L L H L PRECHARGE Read (auto precharge disabled) Write (auto precharge disabled) Read (with auto precharge) Write (with auto precharge) Notes: 9 9 9 9 1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (Table 17 (page 43)), and after tXSR has been met (if the previous state was self refresh). 2. This table describes alternate bank operation, except where noted; for example, the current state is for bank n and the commands shown can be issued to bank m, assuming that bank m is in such a state that the given command is supported. Exceptions are covered below. 3. Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 41 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Truth Tables Read with auto precharge enabled: Starts with registration of a READ command with auto precharge enabled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Write with auto precharge enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. AUTO REFRESH, SELF REFRESH, and LOAD MODE REGISTER commands can only be issued when all banks are idle. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only. All states and sequences not shown are illegal or reserved. READs or WRITEs to bank m listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. Concurrent auto precharge: Bank n will initiate the auto precharge command when its burst has been interrupted by bank m burst. The burst in bank n continues as initiated. For a READ without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the READ on bank n, CAS latency (CL) later. For a READ without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the READ on bank n when registered. DQM should be used one clock prior to the WRITE command to prevent bus contention. For a WRITE without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the WRITE on bank n when registered, with the data-out appearing CL later. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m. For a WRITE without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the WRITE on bank n when registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m. For a READ with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the READ on bank n, CL later. The PRECHARGE to bank n will begin when the READ to bank m is registered. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the READ on bank n when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE to bank n will begin when the WRITE to bank m is registered. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the WRITE on bank n when registered, with the data-out appearing CL later. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the READ to bank m is registered. The last valid WRITE bank n will be data-in registered one clock prior to the READ to bank m. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the WRITE on bank n when registered. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the WRITE to bank m is registered. The last valid WRITE to bank n will be data registered one clock to the WRITE to bank m. 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Truth Tables Table 17: Truth Table – CKE Notes 1–4 apply to all parameters and conditions Current State CKEn-1 CKEn Power-down L Commandn Actionn X Maintain power-down X Maintain self refresh L Self refresh Clock suspend Power-down L H Self refresh X Maintain clock suspend COMMAND INHIBIT or NOP Exit power-down 5 COMMAND INHIBIT or NOP Exit self refresh 6 X Exit clock suspend 7 COMMAND INHIBIT or NOP Power-down entry AUTO REFRESH Self refresh entry VALID Clock suspend entry Clock suspend All banks idle H L All banks idle Reading or writing H Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN H Notes See Table 16 (page 41). 1. CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge. 2. Current state is the state of the SDRAM immediately prior to clock edge n. 3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn. 4. All states and sequences not shown are illegal or reserved. 5. Exiting power-down at clock edge n will put the device in the all banks idle state in time for clock edge n + 1 (provided that tCKS is met). 6. Exiting self refresh at clock edge n will put the device in the all banks idle state after tXSR is met. COMMAND INHIBIT or NOP commands should be issued on any clock edges occurring during the tXSR period. A minimum of two NOP commands must be provided during the tXSR period. 7. After exiting clock suspend at clock edge n, the device will resume operation and recognize the next command at clock edge n + 1. 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Initialization Initialization SDRAM must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. After power is applied to V DD and V DDQ (simultaneously) and the clock is stable (stable clock is defined as a signal cycling within timing constraints specified for the clock pin), the SDRAM requires a 100μs delay prior to issuing any command other than a COMMAND INHIBIT or NOP. Starting at some point during this 100μs period and continuing at least through the end of this period, COMMAND INHIBIT or NOP commands must be applied. After the 100μs delay has been satisfied with at least one COMMAND INHIBIT or NOP command having been applied, a PRECHARGE command should be applied. All banks must then be precharged, thereby placing the device in the all banks idle state. Once in the idle state, at least two AUTO REFRESH cycles must be performed. After the AUTO REFRESH cycles are complete, the SDRAM is ready for mode register programming. Because the mode register will power up in an unknown state, it must be loaded prior to applying any operational command. If desired, the two AUTO REFRESH commands can be issued after the LMR command. The recommended power-up sequence for SDRAM: 1. Simultaneously apply power to V DD and V DDQ. 2. Assert and hold CKE at a LVTTL logic LOW since all inputs and outputs are LVTTLcompatible. 3. Provide stable CLOCK signal. Stable clock is defined as a signal cycling within timing constraints specified for the clock pin. 4. Wait at least 100μs prior to issuing any command other than a COMMAND INHIBIT or NOP. 5. Starting at some point during this 100μs period, bring CKE HIGH. Continuing at least through the end of this period, 1 or more COMMAND INHIBIT or NOP commands must be applied. 6. Perform a PRECHARGE ALL command. 7. Wait at least tRP time; during this time NOPs or DESELECT commands must be given. All banks will complete their precharge, thereby placing the device in the all banks idle state. 8. Issue an AUTO REFRESH command. 9. Wait at least tRFC time, during which only NOPs or COMMAND INHIBIT commands are allowed. 10. Issue an AUTO REFRESH command. 11. Wait at least tRFC time, during which only NOPs or COMMAND INHIBIT commands are allowed. 12. The SDRAM is now ready for mode register programming. Because the mode register will power up in an unknown state, it should be loaded with desired bit values prior to applying any operational command. Using the LMR command, program the mode register. The mode register is programmed via the MODE REGISTER SET command with BA1 = 0, BA0 = 0 and retains the stored information until it is programmed again or the device loses power. Not programming the mode register upon initialization will result in default settings which may not be desired. Outputs are guaranteed High-Z after the LMR command is issued. Outputs should be High-Z already before the LMR command is issued. 13. Wait at least tMRD time, during which only NOP or DESELECT commands are allowed. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Initialization At this point the DRAM is ready for any valid command. Note: More than two AUTO REFRESH commands can be issued in the sequence. After steps 9 and 10 are complete, repeat them until the desired number of AUTO REFRESH + tRFC loops is achieved. Figure 18: Initialize and Load Mode Register T0 CK T1 (( )) (( )) tCK (( )) tCKS tCKH Tn + 1 tCH (( )) (( )) To + 1 tCL (( )) (( )) (( )) (( )) (( )) Tp + 1 Tp + 2 Tp + 3 (( )) CKE (( )) (( )) COMMAND (( )) (( )) DQM/DQML, DQMU (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) A[9:0], A[12:11] (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) A10 (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) tRFC tRFC tCMS tCMH BA[1:0] DQ NOP2 PRECHARGE ALL BANKS SINGLE BANK (( )) (( )) (( )) T = 100μs MIN ALL BANKS High-Z (( )) (( )) AUTO REFRESH (( )) NOP2 (( )) AUTO REFRESH (( )) NOP2 (( )) LOAD MODE REGISTER tAS NOP2 ACTIVE tAH5 ROW CODE tAS tAH ROW CODE Bank Address (( )) tRP Power-up: VDD and CLK stable Precharge all banks AUTO REFRESH AUTO REFRESH tMRD Program Mode Register1,3,4 DON’T CARE UNDEFINED Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. 2. 3. 4. 5. The mode register may be loaded prior to the AUTO REFRESH cycles if desired. If CS is HIGH at clock HIGH time, all commands applied are NOP. JEDEC and PC100 specify three clocks. Outputs are guaranteed High-Z after command is issued. A12 should be a LOW at tP + 1. 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Mode Register Mode Register The mode register defines the specific mode of operation, including burst length (BL), burst type, CAS latency (CL), operating mode, and write burst mode. The mode register is programmed via the LOAD MODE REGISTER command and retains the stored information until it is programmed again or the device loses power. Mode register bits M[2:0] specify the BL; M3 specifies the type of burst; M[6:4] specify the CL; M7 and M8 specify the operating mode; M9 specifies the write burst mode; and M10–Mn should be set to zero to ensure compatibility with future revisions. Mn + 1 and Mn + 2 should be set to zero to select the mode register. The mode registers must be loaded when all banks are idle, and the controller must wait tMRD before initiating the subsequent operation. Violating either of these requirements will result in unspecified operation. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Mode Register Figure 19: Mode Register Definition A12 A11 A10 12 11 10 A9 8 9 WB Reserved A8 7 Op Mode A5 A6 A7 A4 5 6 A3 3 4 CAS Latency Program BA1, BA0 = “0, 0” to ensure compatibility with future devices. A0 0 Address Bus Mode Register (Mx) Burst Length Burst Length M2 M1 M0 Write Burst Mode M9 1 2 BT A1 A2 0 Programmed Burst Length 1 Single Location Access M3 = 0 M3 = 1 0 0 0 1 1 0 0 1 2 2 0 1 0 4 4 0 1 1 8 8 1 0 0 Reserved Reserved M8 M7 M6-M0 Operating Mode 1 0 1 Reserved Reserved 0 0 Defined Standard Operation 1 1 0 Reserved Reserved – – – All other states reserved 1 1 1 Full Page Reserved M3 0 Sequential 1 Interleaved CAS Latency M6 M5 M4 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Burst Type 0 0 0 Reserved 0 0 1 1 0 1 0 2 0 1 1 3 1 0 0 Reserved 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved 47 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Mode Register Burst Length Read and write accesses to the device are burst oriented, and the burst length (BL) is programmable. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths of 1, 2, 4, 8, or continuous locations are available for both the sequential and the interleaved burst types, and a continuous page burst is available for the sequential type. The continuous page burst is used in conjunction with the BURST TERMINATE command to generate arbitrary burst lengths. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst wraps within the block when a boundary is reached. The block is uniquely selected by A[8:1] when BL = 2, A[8:2] when BL = 4, and A[8:3] when BL = 8. The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Continuous page bursts wrap within the page when the boundary is reached. Burst Type Accesses within a given burst can be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit M3. The ordering of accesses within a burst is determined by the burst length, the burst type, and the starting column address. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Mode Register Table 18: Burst Definition Table Order of Accesses Within a Burst Burst Length Starting Column Address 2 Type = Interleaved 0 0-1 0-1 1 1-0 1-0 A0 4 8 Type = Sequential A1 A0 0 0 0-1-2-3 0-1-2-3 0 1 1-2-3-0 1-0-3-2 1 0 2-3-0-1 2-3-0-1 1 1 3-0-1-2 3-2-1-0 A2 A1 A0 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3 1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2 1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 Cn, Cn + 1, Cn + 2, Cn + 3...Cn - 1, Cn... Not supported Continuous n = A0–An/9/8 (location 0–y) Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. For full-page accesses: y = 2048 (x4); y = 1024 (x8); y = 512 (x16). 2. For BL = 2, A1–A9, A11 (x4); A1–A9 (x8); or A1–A8 (x16) select the block-of-two burst; A0 selects the starting column within the block. 3. For BL = 4, A2–A9, A11 (x4); A2–A9 (x8); or A2–A8 (x16) select the block-of-four burst; A0–A1 select the starting column within the block. 4. For BL = 8, A3–A9, A11 (x4); A3–A9 (x8); or A3–A8 (x16) select the block-of-eight burst; A0–A2 select the starting column within the block. 5. For a full-page burst, the full row is selected and A0–A9, A11 (x4); A0–A9 (x8); or A0–A8 (x16) select the starting column. 6. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. 7. For BL = 1, A0–A9, A11 (x4); A0–A9 (x8); or A0–A8 (x16) select the unique column to be accessed, and mode register bit M3 is ignored. 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Mode Register CAS Latency The CAS latency (CL) is the delay, in clock cycles, between the registration of a READ command and the availability of the output data. The latency can be set to two or three clocks. If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge n + m. The DQ start driving as a result of the clock edge one cycle earlier (n + m - 1), and provided that the relevant access times are met, the data is valid by clock edge n + m. For example, assuming that the clock cycle time is such that all relevant access times are met, if a READ command is registered at T0 and the latency is programmed to two clocks, the DQ start driving after T1 and the data is valid by T2. Reserved states should not be used as unknown operation or incompatibility with future versions may result. Figure 20: CAS Latency T0 T1 T2 T3 NOP NOP CLK Command READ tOH tLZ DOUT DQ tAC CL = 2 T0 T4 T1 T2 T3 NOP NOP NOP CLK Command READ tOH tLZ DOUT DQ tAC CL = 3 Don’t Care Undefined Operating Mode The normal operating mode is selected by setting M7 and M8 to zero; the other combinations of values for M7 and M8 are reserved for future use. Reserved states should not be used because unknown operation or incompatibility with future versions may result. Write Burst Mode When M9 = 0, the burst length programmed via M[2:0] applies to both READ and WRITE bursts; when M9 = 1, the programmed burst length applies to READ bursts, but write accesses are single-location (nonburst) accesses. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Bank/Row Activation Bank/Row Activation Before any READ or WRITE commands can be issued to a bank within the SDRAM, a row in that bank must be opened. This is accomplished via the ACTIVE command, which selects both the bank and the row to be activated. After a row is opened with the ACTIVE command, a READ or WRITE command can be issued to that row, subject to the tRCD specification. tRCD (MIN) should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the ACTIVE command on which a READ or WRITE command can be entered. For example, a tRCD specification of 20ns with a 125 MHz clock (8ns period) results in 2.5 clocks, rounded to 3. This is reflected in Figure 21 (page 51), which covers any case where 2 < tRCD (MIN)/tCK ” 3. (The same procedure is used to convert other specification limits from time units to clock cycles.) A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active row has been precharged. The minimum time interval between successive ACTIVE commands to the same bank is defined by tRC. A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive ACTIVE commands to different banks is defined by tRRD. Figure 21: Example: Meeting tRCD (MIN) When 2 < tRCD (MIN)/tCK < 3 T0 T1 T2 T3 CLK tCK Command ACTIVE tCK NOP tCK NOP READ or WRITE tRCD(MIN) Don’t Care PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM READ Operation READ Operation READ bursts are initiated with a READ command, as shown in Figure 15 (page 35). The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. In the following figures, auto precharge is disabled. During READ bursts, the valid data-out element from the starting column address is available following the CAS latency after the READ command. Each subsequent dataout element will be valid by the next positive clock edge. Figure 23 (page 54) shows general timing for each possible CAS latency setting. Upon completion of a burst, assuming no other commands have been initiated, the DQ signals will go to High-Z. A continuous page burst continues until terminated. At the end of the page, it wraps to column 0 and continues. Data from any READ burst can be truncated with a subsequent READ command, and data from a fixed-length READ burst can be followed immediately by data from a READ command. In either case, a continuous flow of data can be maintained. The first data element from the new burst either follows the last element of a completed burst or the last desired data element of a longer burst that is being truncated. The new READ command should be issued x cycles before the clock edge at which the last desired data element is valid, where x = CL - 1. This is shown in Figure 23 (page 54) for CL2 and CL3. SDRAM devices use a pipelined architecture and therefore do not require the 2n rule associated with a prefetch architecture. A READ command can be initiated on any clock cycle following a READ command. Full-speed random read accesses can be performed to the same bank, or each subsequent READ can be performed to a different bank. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM READ Operation Figure 22: Consecutive READ Bursts T0 T1 T2 T3 T4 T5 T6 CLK Command READ NOP NOP NOP NOP READ NOP X = 1 cycle Address Bank, Col n Bank, Col b DOUT n+2 DOUT n+1 DOUT n DQ DOUT n+3 DOUT b CL = 2 T0 T1 T2 T3 T4 T5 T6 T7 CLK Command READ NOP NOP NOP READ NOP NOP NOP X = 2 cycles Address Bank, Col n Bank, Col b DOUT DQ CL = 3 Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN DOUT DOUT Transitioning data DOUT DOUT Don’t Care 1. Each READ command can be issued to any bank. DQM is LOW. 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM READ Operation Figure 23: Random READ Accesses T0 T1 T2 T3 T4 Command READ READ READ READ Address Bank, Col n Bank, Col a Bank, Col x Bank, Col m T5 CLK DOUT DQ NOP DOUT NOP DOUT DOUT CL = 2 T0 T1 T2 T3 T4 Command READ READ READ READ Address Bank, Col n Bank, Col a Bank, Col x Bank, Col m T5 T6 CLK NOP DOUT DQ DOUT NOP DOUT NOP DOUT CL = 3 Transitioning data Note: Don’t Care 1. Each READ command can be issued to any bank. DQM is LOW. Data from any READ burst can be truncated with a subsequent WRITE command, and data from a fixed-length READ burst can be followed immediately by data from a WRITE command (subject to bus turnaround limitations). The WRITE burst can be initiated on the clock edge immediately following the last (or last desired) data element from the READ burst, provided that I/O contention can be avoided. In a given system design, there is a possibility that the device driving the input data will go Low-Z before the DQ go High-Z. In this case, at least a single-cycle delay should occur between the last read data and the WRITE command. The DQM input is used to avoid I/O contention, as shown in Figure 24 (page 55) and Figure 25 (page 56). The DQM signal must be asserted (HIGH) at least two clocks prior to the WRITE command (DQM latency is two clocks for output buffers) to suppress data-out from the READ. After the WRITE command is registered, the DQ will go to High-Z (or remain High-Z), regardless of the state of the DQM signal, provided the DQM was active on the clock just prior to the WRITE command that truncated the READ command. If not, the second WRITE will be an invalid WRITE. For example, if DQM was LOW during T4, then the WRITEs at T5 and T7 would be valid, and the WRITE at T6 would be invalid. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM READ Operation The DQM signal must be de-asserted prior to the WRITE command (DQM latency is zero clocks for input buffers) to ensure that the written data is not masked. Figure 24 (page 55) shows where, due to the clock cycle frequency, bus contention is avoided without having to add a NOP cycle, while Figure 25 (page 56) shows the case where an additional NOP cycle is required. A fixed-length READ burst may be followed by or truncated with a PRECHARGE command to the same bank, provided that auto precharge was not activated. The PRECHARGE command should be issued x cycles before the clock edge at which the last desired data element is valid, where x = CL - 1. This is shown in Figure 26 (page 56) for each possible CL; data element n + 3 is either the last of a burst of four or the last desired data element of a longer burst. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. Note that part of the row precharge time is hidden during the access of the last data element(s). In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from the same fixed-length burst with auto precharge. The disadvantage of the PRECHARGE command is that it requires that the command and address buses be available at the appropriate time to issue the command. The advantage of the PRECHARGE command is that it can be used to truncate fixed-length or continuous page bursts. Figure 24: READ-to-WRITE T0 T1 T2 T3 T4 CLK DQM Command READ Address Bank, Col n NOP NOP NOP WRITE Bank, Col b tCK tHZ DOUT DQ DIN t DS Transitioning data Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Don’t Care 1. CL = 3. The READ command can be issued to any bank, and the WRITE command can be to any bank. If a burst of one is used, DQM is not required. 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM READ Operation Figure 25: READ-to-WRITE With Extra Clock Cycle T0 T1 T2 T3 T4 T5 CLK DQM Command Address READ NOP NOP NOP NOP WRITE Bank, Col n Bank, Col b tHZ DOUT DQ DIN tDS Transitioning data Note: Don’t Care 1. CL = 3. The READ command can be issued to any bank, and the WRITE command can be to any bank. Figure 26: READ-to-PRECHARGE T0 T1 T2 T3 T4 T5 T6 T7 CLK tRP Command READ NOP NOP NOP NOP PRECHARGE NOP ACTIVE X = 1 cycle Address Bank (a or all) Bank a, Col n DOUT DQ Bank a, Row DOUT DOUT DOUT CL = 2 T0 T1 T2 T3 T4 T5 T6 T7 CLK t RP Command READ NOP NOP NOP PRECHARGE NOP NOP ACTIVE X = 2 cycles Address Bank (a or all) Bank a, Col DOUT DQ DOUT Bank a, Row DOUT DOUT CL = 3 Transitioning data Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Don’t Care 1. DQM is LOW. 56 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM READ Operation Continuous-page READ bursts can be truncated with a BURST TERMINATE command and fixed-length READ bursts can be truncated with a BURST TERMINATE command, provided that auto precharge was not activated. The BURST TERMINATE command should be issued x cycles before the clock edge at which the last desired data element is valid, where x = CL - 1. This is shown in Figure 27 (page 57) for each possible CAS latency; data element n + 3 is the last desired data element of a longer burst. Figure 27: Terminating a READ Burst T0 T1 T2 T3 T4 T5 T6 CLK Command READ Address Bank, Col n NOP NOP NOP BURST TERMINATE NOP NOP X = 1 cycle DOUT DOUT DQ DOUT DOUT CL = 2 T0 T1 T2 T3 T4 T5 T6 T7 CLK Command READ Address Bank, Col n NOP NOP NOP BURST TERMINATE NOP NOP NOP X = 2 cycles DOUT DQ DOUT DOUT DOUT CL = 3 Transitioning data Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Don’t Care 1. DQM is LOW. 57 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM READ Operation Figure 28: Alternating Bank Read Accesses T0 T1 tCK CLK T2 T3 T4 T5 T6 T7 T8 READ NOP ACTIVE tCL tCH tCKS tCKH tCMS tCMH CKE Command ACTIVE NOP READ NOP NOP ACTIVE tCMS tCMH DQM tAS Address Row tAS A10 Row Column m tAH Column b Enable auto precharge 1 Row Enable auto precharge Row tAS BA0, BA1 tAH Row Row tAH Bank 0 Bank 0 Bank 3 Bank 3 tAC tOH tAC DQ tLZ tRCD - bank 0 tAC tOH DOUT DOUT Bank 0 tAC tOH DOUT tAC tOH DOUT tRP - bank 0 CL - bank 0 tAC tOH DOUT tRCD - bank 0 tRAS - bank 0 tRC - bank 0 tRRD tRCD - bank 3 CL - bank 3 Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Undefined 1. For this example, BL = 4 and CL = 2. 58 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM READ Operation Figure 29: READ Continuous Page Burst T0 T1 T2 tCL CLK T3 T4 T5 T6 (( )) (( )) tCK tCH Tn + 1 Tn + 2 Tn + 3 Tn + 4 tCKS tCKH (( )) (( )) CKE tCMS Command tCMH ACTIVE NOP READ tCMS NOP NOP NOP NOP tCMH tAS tAS A10 BURST TERM NOP NOP (( )) (( )) Column m tAH (( )) (( )) Row tAS BA0, BA1 tAH Row NOP (( )) (( )) DQM Address (( )) (( )) tAH Bank (( )) (( )) Bank tAC tAC tOH DOUT DQ DOUT tLZ tRCD CAS latency tAC tOH tAC tOH (( )) (( DOUT ) ) (( )) tAC tOH DOUT Full-page burst does not self-terminate. Can use BURST TERMINATE command. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN DOUT tOH DOUT tHZ All locations within same row Full page completed Note: tAC tOH Don’t Care Undefined 1. For this example, CL = 2. 59 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM READ Operation Figure 30: READ – DQM Operation T0 T1 tCK CLK T2 T3 T4 T5 NOP NOP T6 T7 T8 NOP NOP tCL tCH tCKS tCKH tCMS tCMH CKE Command ACTIVE NOP READ tCMS NOP NOP tCMH DQM tAS Row Address tAS Column m tAH Enable auto precharge Row A10 tAS BA0, BA1 tAH Disable auto precharge tAH Bank Bank tAC tOH tAC DQ DOUT tLZ tRCD tHZ CL = 2 tAC tLZ tOH tOH DOUT DOUT tHZ Don’t Care Undefined Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. For this example, BL = 4 and CL = 2. 60 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM WRITE Operation WRITE Operation WRITE bursts are initiated with a WRITE command, as shown in Figure 16 (page 36). The starting column and bank addresses are provided with the WRITE command and auto precharge is either enabled or disabled for that access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the generic WRITE commands used in the following figures, auto precharge is disabled. During WRITE bursts, the first valid data-in element is registered coincident with the WRITE command. Subsequent data elements are registered on each successive positive clock edge. Upon completion of a fixed-length burst, assuming no other commands have been initiated, the DQ will remain at High-Z and any additional input data will be ignored (see Figure 31 (page 61)). A continuous page burst continues until terminated; at the end of the page, it wraps to column 0 and continues. Data for any WRITE burst can be truncated with a subsequent WRITE command, and data for a fixed-length WRITE burst can be followed immediately by data for a WRITE command. The new WRITE command can be issued on any clock following the previous WRITE command, and the data provided coincident with the new command applies to the new command (see Figure 32 (page 62)). Data n + 1 is either the last of a burst of two or the last desired data element of a longer burst. SDRAM devices use a pipelined architecture and therefore do not require the 2n rule associated with a prefetch architecture. A WRITE command can be initiated on any clock cycle following a previous WRITE command. Full-speed random write accesses within a page can be performed to the same bank, as shown in Figure 33 (page 63), or each subsequent WRITE can be performed to a different bank. Figure 31: WRITE Burst T0 T1 T2 T3 Command WRITE NOP NOP NOP Address Bank, Col n CLK DQ DIN DIN Transitioning data Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Don’t Care 1. BL = 2. DQM is LOW. 61 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM WRITE Operation Figure 32: WRITE-to-WRITE T0 T1 T2 Command WRITE NOP WRITE Address Bank, Col n CLK DQ DIN Bank, Col b DIN Transitioning data Note: DIN Don’t Care 1. DQM is LOW. Each WRITE command may be issued to any bank. Data for any WRITE burst can be truncated with a subsequent READ command, and data for a fixed-length WRITE burst can be followed immediately by a READ command. After the READ command is registered, data input is ignored and WRITEs will not be executed (see Figure 34 (page 63)). Data n + 1 is either the last of a burst of two or the last desired data element of a longer burst. Data for a fixed-length WRITE burst can be followed by or truncated with a PRECHARGE command to the same bank, provided that auto precharge was not activated. A continuous-page WRITE burst can be truncated with a PRECHARGE command to the same bank. The PRECHARGE command should be issued tWR after the clock edge at which the last desired input data element is registered. The auto precharge mode requires a tWR of at least one clock with time to complete, regardless of frequency. In addition, when truncating a WRITE burst at high clock frequencies ( tCK < 15ns), the DQM signal must be used to mask input data for the clock edge prior to and the clock edge coincident with the PRECHARGE command (see Figure 35 (page 64)). Data n + 1 is either the last of a burst of two or the last desired data element of a longer burst. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from the same fixed-length burst with auto precharge. The disadvantage of the PRECHARGE command is that it requires that the command and address buses be available at the appropriate time to issue the command. The advantage of the PRECHARGE command is that it can be used to truncate fixed-length bursts or continuous page bursts. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 62 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM WRITE Operation Figure 33: Random WRITE Cycles T0 T1 T2 T3 Command WRITE WRITE WRITE WRITE Address Bank, Col n Bank, Col a Bank, Col x Bank, Col m DIN DIN DIN DIN CLK DQ Transitioning data Note: Don’t Care 1. Each WRITE command can be issued to any bank. DQM is LOW. Figure 34: WRITE-to-READ T0 T1 T2 Command WRITE NOP READ Address Bank, Col n T3 T4 T5 NOP NOP NOP DOUT DOUT CLK DQ DIN Bank, Col b DIN Transitioning data Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Don’t Care 1. The WRITE command can be issued to any bank, and the READ command can be to any bank. DQM is LOW. CL = 2 for illustration. 63 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM WRITE Operation Figure 35: WRITE-to-PRECHARGE T0 T1 T2 T3 T4 T5 T6 NOP ACTIVE NOP CLK tWR @ tCK • 15ns DQM tRP Command Address WRITE NOP NOP PRECHARGE Bank (a or all) Bank a, Col n Bank a, Row tWR DQ DIN DIN tWR @ tCK < 15ns DQM tRP Command Address WRITE NOP NOP PRECHARGE NOP NOP Bank (a or all) Bank a, Col n ACTIVE Bank a, Row t WR DQ DIN DIN Transitioning data Note: Don’t Care 1. In this example DQM could remain LOW if the WRITE burst is a fixed length of two. Fixed-length WRITE bursts can be truncated with the BURST TERMINATE command. When truncating a WRITE burst, the input data applied coincident with the BURST TERMINATE command is ignored. The last data written (provided that DQM is LOW at that time) will be the input data applied one clock previous to the BURST TERMINATE command. This is shown in Figure 36 (page 65), where data n is the last desired data element of a longer burst. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 64 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM WRITE Operation Figure 36: Terminating a WRITE Burst T0 T1 Command WRITE BURST TERMINATE Address Bank, Col n T2 CLK DQ DIN Transitioning data Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN NEXT COMMAND Address Data Don’t Care 1. DQM is LOW. 65 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM WRITE Operation Figure 37: Alternating Bank Write Accesses T0 T1 tCK CLK T2 T3 T4 T5 T6 T7 T8 T9 WRITE NOP NOP ACTIVE tCL tCH tCKS tCKH tCMS tCMH CKE Command ACTIVE NOP WRITE tCMS NOP NOP ACTIVE tCMH DQM tAS Address tAS A10 Row Column m tAH Row Column b Enable auto precharge Enable auto precharge Row tAS BA0, BA1 tAH Row Row Row tAH Bank 0 Bank 0 tDS tDH DIN DQ Bank 1 tDS tDH DIN tDS Bank 1 tDS tDH DIN tDH DIN tDS tDH DIN tWR - bank 0 tRCD - bank 0 Bank 0 tDS tDH DIN tDS tDH DIN tRP - bank 0 tDS tDH DIN tRCD - bank 0 tRAS - bank 0 tWR - bank 1 tRC - bank 0 tRCD - bank 1 tRRD Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. For this example, BL = 4. 66 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM WRITE Operation Figure 38: WRITE – Continuous Page Burst T0 T1 T2 tCL CLK T3 T4 T5 (( )) (( )) tCK tCH tCKS tCKH Command tCMH ACTIVE NOP WRITE NOP NOP NOP tCMS tCMH Address A10 (( )) (( )) NOP tAH NOP (( )) (( )) tAH Bank (( )) (( )) Bank tDS DIN DQ tDH tDS tDH tDS DIN tDH DIN tRCD tDS tDH DIN (( )) (( )) tDS All locations within same row tDH DIN Full-page burst does not self-terminate. Use BURST TERMINATE command to stop.1, 2 Full page completed Notes: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN BURST TERM (( )) (( )) Column m Row tAS BA0, BA1 tAH Row tAS Tn + 3 (( )) (( )) DQM tAS Tn + 2 (( )) (( )) CKE tCMS Tn + 1 Don’t Care 1. tWR must be satisfied prior to issuing a PRECHARGE command. 2. Page left open; no tRP. 67 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM WRITE Operation Figure 39: WRITE – DQM Operation T0 T1 T2 tCK CLK T3 T4 T5 NOP NOP NOP T6 T7 NOP NOP tCL tCH tCKS tCKH tCMS tCMH CKE Command ACTIVE NOP WRITE tCMS tCMH DQM tAS Address Row tAS A10 Column m tAH Enable auto precharge Row tAS BA0, BA1 tAH Disable auto precharge tAH Bank Bank tDS tDH tDS DIN DQ DIN tRCD Note: tDH tDS tDH DIN Don’t Care 1. For this example, BL = 4. Burst Read/Single Write The burst read/single write mode is entered by programming the write burst mode bit (M9) in the mode register to a 1. In this mode, all WRITE commands result in the access of a single column location (burst of one), regardless of the programmed burst length. READ commands access columns according to the programmed burst length and sequence, just as in the normal mode of operation (M9 = 0). PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 68 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation PRECHARGE Operation The PRECHARGE command (see Figure 17 (page 37)) is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access some specified time (tRP) after the PRECHARGE command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged (A10 = LOW), inputs BA0 and BA1 select the bank. When all banks are to be precharged (A10 = HIGH), inputs BA0 and BA1 are treated as “Don’t Care.” After a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. Auto Precharge Auto precharge is a feature that performs the same individual-bank PRECHARGE function described previously, without requiring an explicit command. This is accomplished by using A10 to enable auto precharge in conjunction with a specific READ or WRITE command. A precharge of the bank/row that is addressed with the READ or WRITE command is automatically performed upon completion of the READ or WRITE burst, except in the continuous page burst mode where auto precharge does not apply. In the specific case of write burst mode set to single location access with burst length set to continuous, the burst length setting is the overriding setting and auto precharge does not apply. Auto precharge is nonpersistent in that it is either enabled or disabled for each individual READ or WRITE command. Auto precharge ensures that the precharge is initiated at the earliest valid stage within a burst. Another command cannot be issued to the same bank until the precharge time (tRP) is completed. This is determined as if an explicit PRECHARGE command was issued at the earliest possible time, as described for each burst type in the Burst Type (page 48) section. Micron SDRAM supports concurrent auto precharge; cases of concurrent auto precharge for READs and WRITEs are defined below. READ with auto precharge interrupted by a READ (with or without auto precharge) A READ to bank m will interrupt a READ on bank n following the programmed CAS latency. The precharge to bank n begins when the READ to bank m is registered (see Figure 40 (page 70)). READ with auto precharge interrupted by a WRITE (with or without auto precharge) A WRITE to bank m will interrupt a READ on bank n when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The precharge to bank n begins when the WRITE to bank m is registered (see Figure 41 (page 71)). WRITE with auto precharge interrupted by a READ (with or without auto precharge) A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out appearing CL later. The precharge to bank n will begin after tWR is met, where tWR begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m (see Figure 46 (page 76)). WRITE with auto precharge interrupted by a WRITE (with or without auto precharge) A WRITE to bank m will interrupt a WRITE on bank n when registered. The precharge to bank n will begin after tWR is met, where tWR begins when the WRITE to bank m is reg- PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 69 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation istered. The last valid data WRITE to bank n will be data registered one clock prior to a WRITE to bank m (see Figure 47 (page 76)). Figure 40: READ With Auto Precharge Interrupted by a READ T0 T1 T2 T3 T4 T5 T6 T7 CLK Command Bank n Internal states NOP Page active READ - AP Bank n READ - AP Bank m NOP READ with burst of 4 NOP NOP NOP Idle Interrupt burst, precharge tRP - bank m tRP - bank n Bank m Page active Address Bank n, Col a NOP Precharge READ with burst of 4 Bank m, Col d DOUT DQ DOUT DOUT DOUT CL = 3 (bank n) CL = 3 (bank m) Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. DQM is LOW. 70 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation Figure 41: READ With Auto Precharge Interrupted by a WRITE T0 T1 T2 T3 T4 T5 T6 T7 CLK Command Internal States Bank n READ - AP Bank n Page active NOP NOP NOP READ with burst of 4 WRITE - AP Bank m NOP NOP Interrupt burst, precharge Idle tWR - bankm tRP - bank n Page active Bank m Address NOP Write-back WRITE with burst of 4 Bank n, Col a Bank m, Col d DQM1 DOUT DQ CL = 3 (bank n) Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN DIN DIN DIN Transitioning data DIN Don’t Care 1. DQM is HIGH at T2 to prevent DOUT a + 1 from contending with DIN d at T4. 71 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation Figure 42: READ With Auto Precharge T0 T1 tCK CLK T2 T3 T4 T5 NOP NOP T6 T7 T8 NOP NOP ACTIVE tCL tCH tCKS tCKH tCMS tCMH CKE Command ACTIVE NOP READ tCMS NOP tCMH DQM tAS Address Row tAS A10 Row Column m tAH Enable auto precharge Row tAS BA0, BA1 tAH Row tAH Bank Bank Bank tAC tOH tAC DQ tLZ tRCD DOUT m tAC tAC tOH DOUT m+1 tOH DOUT m+2 tRP CL = 2 tOH DOUT m+3 tHZ tRAS tRC Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Undefined 1. For this example, BL = 4 and CL = 2. 72 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation Figure 43: READ Without Auto Precharge T0 T1 tCK CLK T2 T3 T4 T5 NOP NOP T6 T7 T8 NOP ACTIVE tCL tCH tCKS tCKH CKE tCMS tCMH Command ACTIVE NOP READ NOP PRECHARGE tCMS tCMH DQM tAS Row Address tAS Row Column m tAH All banks Row A10 tAS BA0, BA1 tAH Row tAH Bank Disable auto precharge Single bank Bank Bank(s) tAC tOH tAC DQ tLZ tRCD DOUT tAC tOH DOUT Bank tAC tOH DOUT tRP CL = 2 tOH DOUT tHZ tRAS tRC Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Undefined 1. For this example, BL = 4, CL = 2, and the READ burst is followed by a manual PRECHARGE. 73 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation Figure 44: Single READ With Auto Precharge T0 T1 T2 tCK CLK T3 T4 T5 NOP NOP T6 T7 tCL tCH tCKS tCKH tCMS tCMH CKE Command ACTIVE NOP READ NOP NOP ACTIVE tCMS tCMH DQM tAS tAH tAS tAH Enable auto precharge Row Row A10 tAS BA0, BA1 Row Column m Row Address tAH Bank Bank Bank tAC DQ DOUT tLZ tRCD tRAS tOH tRP CL = 2 tRC Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Undefined 1. For this example, BL = 1 and CL = 2. 74 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation Figure 45: Single READ Without Auto Precharge T0 T1 tCK CLK T2 T3 T4 T5 NOP NOP T6 T7 T8 tCL tCH tCKS tCKH tCMS tCMH CKE Command ACTIVE NOP READ PRECHARGE NOP ACTIVE NOP tCMS tCMH DQM tAS Address A10 Row Column m Row tAS tAH All banks Row Row tAS BA0, BA1 tAH tAH Bank Disable auto precharge Single bank Bank Bank(s) tOH tAC DQ tLZ tRCD DOUT tHZ CL = 2 tRP Don’t Care tRAS tRC Undefined Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Bank 1. For this example, BL = 1, CL = 2, and the READ burst is followed by a manual PRECHARGE. 75 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation Figure 46: WRITE With Auto Precharge Interrupted by a READ T0 T1 T2 T3 T4 T5 T6 T7 CLK Command Bank n NOP Page active WRITE - AP Bank n READ - AP Bank m NOP NOP NOP Interrupt burst, write-back WRITE with burst of 4 Internal States Page active Address Bank n, Col a DIN DQ NOP Precharge tRP - bank n t WR - bank n Bank m NOP tRP - bank m READ with burst of 4 Bank m, Col d DIN DOUT DOUT CL = 3 (bank m) Don’t Care Note: 1. DQM is LOW. Figure 47: WRITE With Auto Precharge Interrupted by a WRITE T0 T1 T2 T3 T4 T5 T6 T7 CLK Command Bank n Internal States NOP Page active WRITE - AP Bank n NOP NOP WRITE with burst of 4 WRITE - AP Bank m NOP Interrupt burst, write-back Address DQ Page active DIN Precharge tWR - bank m Write-back WRITE with burst of 4 Bank n, Col a NOP tRP - bank n tWR - bank n Bank m NOP Bank m, Col d DIN DIN DIN DIN DIN DIN Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. DQM is LOW. 76 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation Figure 48: WRITE With Auto Precharge T0 tCK CLK T1 tCL T2 T3 T4 T5 T6 T7 T8 T9 NOP NOP NOP NOP NOP NOP ACTIVE tCH tCKS tCKH tCMS tCMH CKE Command ACTIVE NOP WRITE tCMS tCMH DQM tAS Address Row tAS A10 Row Column m tAH Enable auto precharge Row Row tAS BA0, BA1 tAH tAH Bank Bank Bank tDS tDH DIN DQ tDS tDH DIN tDS tDH DIN tDS tDH DIN tRCD tRAS tWR tRP tRC Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. For this example, BL = 4. 77 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation Figure 49: WRITE Without Auto Precharge T0 tCK CLK T1 tCL T2 T3 T4 T5 T6 NOP NOP NOP NOP T7 T8 T9 PRECHARGE NOP ACTIVE tCH tCKS tCKH tCMS tCMH CKE Command ACTIVE NOP WRITE tCMS tCMH DQM tAS Address Row tAS A10 Column m Row tAH All banks Row Row tAS BA0, BA1 tAH tAH Bank Disable auto precharge Single bank Bank Bank tDS tDH DIN DQ tDS tDH DIN tDS tDH DIN tDS Bank tDH DIN tRCD tRAS tWR tRP tRC Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. For this example, BL = 4 and the WRITE burst is followed by a manual PRECHARGE. 78 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation Figure 50: Single WRITE With Auto Precharge T0 tCK CLK T1 T2 tCL T3 T4 T5 T6 NOP NOP NOP NOP T7 T8 ACTIVE NOP tCH tCKS tCKH tCMS tCMH CKE Command ACTIVE NOP WRITE tCMS tCMH DQM tAS Address Row tAS A10 Row Column m tAH Enable auto precharge Row Row tAS BA0, BA1 tAH tAH Bank Bank Bank tDS tDH DIN DQ tRCD tRAS tRP tWR tRC Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. For this example, BL = 1. 79 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM PRECHARGE Operation Figure 51: Single WRITE Without Auto Precharge T0 T1 tCK CLK T2 T3 T4 NOP NOP T5 T6 T7 T8 tCL tCH tCKS tCKH tCMS tCMH CKE Command ACTIVE NOP WRITE PRECHARGE NOP ACTIVE NOP tCMS tCMH DQM tAS Row Address tAS Column m tAH All banks Row Row A10 tAS BA0, BA1 tAH tAH Bank Disable auto precharge Single bank Bank Bank tDS DIN DQ tRCD tRP tWR tRAS tRC Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Bank tDH 1. For this example, BL = 1 and the WRITE burst is followed by a manual PRECHARGE. 80 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM AUTO REFRESH Operation AUTO REFRESH Operation The AUTO REFRESH command is used during normal operation of the device to refresh the contents of the array. This command is nonpersistent, so it must be issued each time a refresh is required. All active banks must be precharged prior to issuing an AUTO REFRESH command. The AUTO REFRESH command should not be issued until the minimum tRP is met following the PRECHARGE command. Addressing is generated by the internal refresh controller. This makes the address bits “Don’t Care” during an AUTO REFRESH command. After the AUTO REFRESH command is initiated, it must not be interrupted by any executable command until tRFC has been met. During tRFC time, COMMAND INHIBIT or NOP commands must be issued on each positive edge of the clock. The SDRAM requires that every row be refreshed each tREF period. Providing a distributed AUTO REFRESH command—calculated by dividing the refresh period (tREF) by the number of rows to be refreshed—meets the timing requirement and ensures that each row is refreshed. Alternatively, to satisfy the refresh requirement a burst refresh can be employed after every tREF period by issuing consecutive AUTO REFRESH commands for the number of rows to be refreshed at the minimum cycle rate (tRFC). PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 81 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM AUTO REFRESH Operation Figure 52: Auto Refresh Mode T0 CLK T1 tCK T2 (( )) (( )) tCH tCKS tCKH tCMS tCMH PRECHARGE NOP AUTO REFRESH NOP (( )) ( ( NOP )) Address All banks A10 Single bank tAS AUTO REFRESH NOP (( )) ( ( NOP )) ACTIVE (( )) (( )) (( )) (( )) (( )) (( )) Row (( )) (( )) (( )) (( )) Row (( )) (( )) (( )) (( )) Bank (( )) (( )) tAH Bank(s) DQ High-Z tRP tRFC tRFC Precharge all active banks Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN To + 1 (( )) (( )) (( )) DQM BA0, BA1 (( )) (( )) (( )) CKE Command Tn + 1 tCL Don’t Care 1. Back-to-back AUTO REFRESH commands are not required. 82 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM SELF REFRESH Operation SELF REFRESH Operation The self refresh mode can be used to retain data in the device, even when the rest of the system is powered down. When in self refresh mode, the device retains data without external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH command, except CKE is disabled (LOW). After the SELF REFRESH command is registered, all the inputs to the device become “Don’t Care” with the exception of CKE, which must remain LOW. After self refresh mode is engaged, the device provides its own internal clocking, enabling it to perform its own AUTO REFRESH cycles. The device must remain in self refresh mode for a minimum period equal to tRAS and remains in self refresh mode for an indefinite period beyond that. The procedure for exiting self refresh requires a sequence of commands. First, CLK must be stable prior to CKE going back HIGH. (Stable clock is defined as a signal cycling within timing constraints specified for the clock ball.) After CKE is HIGH, the device must have NOP commands issued for a minimum of two clocks for tXSR because time is required for the completion of any internal refresh in progress. Upon exiting the self refresh mode, AUTO REFRESH commands must be issued according to the distributed refresh rate (tREF/refresh row count) as both SELF REFRESH and AUTO REFRESH utilize the row refresh counter. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 83 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM SELF REFRESH Operation Figure 53: Self Refresh Mode T0 CLK T1 tCK tCL tCH T2 tCKS CKE Command tCKS tCKH tCMS tCMH PRECHARGE (( )) (( )) (( )) NOP AUTO REFRESH (( )) (( )) Tn + 1 (( )) (( )) (( )) )) (( )) (( )) Address (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) Single bank tAS BA0, BA1 DQ tAH Bank(s) High-Z tRP Precharge all active banks tXSR Enter self refresh mode Exit self refresh mode (Restart refresh time base) CLK stable prior to exiting self refresh mode Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN AUTO REFRESH NOP ( ( (( )) (( )) All banks To + 2 (( )) (( )) DQM A10 To + 1 Don’t Care 1. Each AUTO REFRESH command performs a REFRESH cycle. Back-to-back commands are not required. 84 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Power-Down Power-Down Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND INHIBIT when no accesses are in progress. If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering powerdown deactivates the input and output buffers, excluding CKE, for maximum power savings while in standby. The device cannot remain in the power-down state longer than the refresh period (64ms) because no REFRESH operations are performed in this mode. The power-down state is exited by registering a NOP or COMMAND INHIBIT with CKE HIGH at the desired clock edge (meeting tCKS). Figure 54: Power-Down Mode T0 T1 tCK CLK T2 (( )) (( )) tCL tCH tCKS CKE tCKS Tn + 2 tCKS (( )) tCKH tCMS tCMH Command Tn + 1 NOP PRECHARGE (( )) (( )) NOP NOP ACTIVE DQM (( )) (( )) Address (( )) (( )) Row (( )) (( )) Row (( )) (( )) Bank All banks A10 Single bank tAS BA0, BA1 DQ tAH Bank(s) High-Z (( )) Two clock cycles Input buffers gated off All banks idle while in power-down mode Precharge all active banks All banks idle, enter power-down mode Exit power-down mode Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. Violating refresh requirements during power-down may result in a loss of data. 85 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Clock Suspend Clock Suspend The clock suspend mode occurs when a column access/burst is in progress and CKE is registered LOW. In the clock suspend mode, the internal clock is deactivated, freezing the synchronous logic. For each positive clock edge on which CKE is sampled LOW, the next internal positive clock edge is suspended. Any command or data present on the input balls when an internal clock edge is suspended will be ignored; any data present on the DQ balls remains driven; and burst counters are not incremented, as long as the clock is suspended. Exit clock suspend mode by registering CKE HIGH; the internal clock and related operation will resume on the subsequent positive clock edge. Figure 55: Clock Suspend During WRITE Burst T0 T1 NOP WRITE T2 T3 T4 T5 NOP NOP DIN DIN CLK CKE Internal clock Command Address DIN Bank, Col n DIN Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. For this example, BL = 4 or greater, and DQM is LOW. 86 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Clock Suspend Figure 56: Clock Suspend During READ Burst T0 T1 T2 T3 T4 T5 T6 CLK CKE Internal clock Command READ Address Bank, Col n DQ NOP NOP NOP DOUT DOUT NOP DOUT NOP DOUT Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 1. For this example, CL = 2, BL = 4 or greater, and DQM is LOW. 87 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Clock Suspend Figure 57: Clock Suspend Mode T0 T1 tCK CLK T2 T3 T4 T5 T6 T7 T8 T9 tCL tCH tCKS tCKH CKE tCKS tCKH tCMS Command tCMH READ NOP NOP NOP NOP NOP WRITE NOP tCMS tCMH DQM tAS Address tAH Column e Column m tAS tAH tAS tAH A10 BA0, BA1 Bank Bank tAC tOH tAC DQ tLZ tHZ DOUT DOUT tDS tDH DIN DIN Don’t Care Note: PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN Undefined 1. For this example, BL = 2, CL = 3, and auto precharge is disabled. 88 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Revision History Revision History Rev. W – 05/15 • Added Notes and Warnings – 11/2018. • Corrected typo in Electrical spec.s (changed date, not revision). Rev. W – 09/14 • Replaced the Initialization timing diagram Rev. V – 1/14, 8/14 • Corrected typo to width between outer solder balls: from 6.4 CTR to 5.6 CTR • Corrected typo, 8/14 • Replaced the Initialization timing diagram Rev. U – 05/13 • Replaced 60-Ball FBGA "FB/BB" (8mm x 16mm) (x4, x8) MTG-182 figure with MTG-768 • Changed planarity to 0.12 in 54-Ball VFBGA "BG/FG" (8mm x 14mm) (x16) figure Rev. T – 03/13 • In Thermal Impedance Simulated Values table, for Die Revision D corrected 54-ball VFBGA from B4, F4 to BG, FG Rev. S – 12/12 • Updated Initialize and Load Mode Register timing diagram to reflect BA[1:0] = 0, 0 • Updated Mode Register definition to reflect CL1 Rev. R – 10/12 • Added CL1 and CL2 support to -6A column in AC operating conditions table • Added note for die rev G in AC operating conditions table; applied to -6A CL1 and CL2 for access time from CLK, clock cycle time, and data-out high-Z time • Updated AUTO REFRESH and SELF REFRESH Rev. Q – 02/12 • Updated 54-Ball VFBGA "B4/F4" (8mm x 8mm) (x16) package drawing to new format • Updated IDD tables Rev. P – 12/11 • Revised note regarding notches: pinout drawing, tsop package drawing, test point drawing • Removed package drawing without notches • Updated title and note for notched package drawing • Removed "only" from IDD table titles PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 89 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Revision History Rev. O – 07/11 • • • • Added Revision G information on Page 1 Added Revision G IDD table with TBD for values Added Revision G section to Thermal Impedance Table 6 Added package diagram for package codes B4 and F4. Note that MTG-743 does not yet reflect lead composition for the F4. Revised diagram pending • Added tRC note to AC operating conditions tables Rev. N – 01/10 • Updated format. • Used LPSDR as base and replaced with SDR-specific information as needed Rev. M – 11/08 • Added Automotive Temperature documentation to datasheet: – Front-page Options table – General Description section, Automotive Temperature sub-section – Commands section, Auto Refresh sub-section – Commands section, Self Refresh sub-section – Electrical Specifications section, Absolute Maximum Ratings table – Electrical Specifications section, Temperature Limits table – Electrical Specifications section, IDD Specifications and Conditions (-6A) – Electrical Specifications section, IDD Specifications and Conditions (-7E, -75) – Electrical Specifications section, Electrical Characteristics and Recommended AC Operating Conditions (-6A) table – Electrical Specifications section, Electrical Characteristics and Recommended AC Operating Conditions (-7E, -75) table – Electrical Specifications section, note "The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range is ensured..." – Timing Diagrams section, Self Refresh Mode diagram, added note, "Self refresh mode not supported on automotive temperature (AT) devices." Rev. L – 08/07 • Changed heading from 16, 8, and 4 Megs to 64, 32, and 16 Megs in Features section, Address Table table • Added FBGA and VFBGA package dimensions to Features section, Options table • Changed order of packages to show 54-ball packages after 60-ball packages in Features section, Options table. • Changed DQMU to DQML in Symbol column of 54-Pin TSOP Descriptions table • Combined 54-Ball FBGA Description table and 60-Ball FBGA Description table into one table, 54-Ball and 60-Ball FBGA Description table • Removed duplicate content for Burst Type and CAS Latency (CL) in Register Definition section • Reworded table sub-title notes for Truth Table 1 – Commands and DQM Operation table • Changed VALID to WRITE or NOP in Command column of Truth Table 2 – CKE table PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 90 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Revision History • Reworded table sub-title notes for Truth Table 2 – CKE, Truth Table 3 – Current State Bank n, Command to Bank n, and Truth Table 4 – Current State Bank n, Command to Bank m tables • Moved Electrical Characteristics and Recommended AC Operating Conditions (-6A) and IDD Specifications and Conditions (-6A) tables from addendum to Electrical Specifications section • Reworded table sub-title notes for DC Electrical Characteristics and Operating Characteristics, IDD Specifications and Conditions (-6A), IDD Specifications and Conditions (-7E, -75), Capacitance, Electrical Characteristics and Recommended AC Operating Conditions (-6A), and Electrical Characteristics and Recommended AC Operating Conditions (-7E, -75) tables • Moved AC Functional Characteristics (-6A) table from addendum to Electrical Specifications section • Reworded table sub-title notes for AC Functional Characteristics (-6A) and AC Functional Characteristics (-7E, -75) tables Rev. K – 02/07 • Corrected MDM numbers • Re-created PDF; text in the .fm file did not show in the PDF Rev. K – 06/06 • Updated template • Removed PC66 • Added -6A Rev. J – 03/05 • Deleted note "contact factory for availability" from Options Rev. H – 02/05 • Corrected "Bank 1" to "Bank 3," then-page 49 Rev. H – 10/04 • Added Die Revision to Options. • Changed package drawing for the Y16A to Y16Y cross over, then-page 61 Rev. G – 08/03 • • • • • • Change blue and green color to match Added Pb-free packages to front page Added Pb part numbers to then-page 4 Changed wording to V DDQ and V SSQ on then-pages 10 and 11 Added Note 3 to Self Refresh Mode on then-page 53 Added Note 3 to package drawings on then-pages 60 and 61 Rev. F – 01/03 • Corrected E2 by removing sv on then-page 3 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 91 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Revision History • • • • • Corrected 54-ball pins G3, H9, G2, and G1 on then-page 10 Added transitioning data to DQ lines in Figures 7–27 on then-pages 20–30 Added note 37 to then-page 39 Updated mech drawing for 54-pin TSOP on then-page 59 Update mech drawing for FG Package on then-page 61 • • • • • • Added 54-ball FBGA package information to front pag Added 54-ball FBGA pinout drawing to then-page 3 Added 54-ball FBGA package part numbers to then-page 4 Added 54-ball FBGA pin descriptions to then-page 10 Updated DQM information in 60-ball FGBA pin descriptions on then-page 11 Added 54-ball FGBA mech drawing to then-page 59 • • • • • Removed Preliminary status Updated x4 and x8 FBGA row label from Q to R on then-page 2 Moved "(to state (A10 LOW})" on then-page 8 Updated IDD(MAX) Specifications to reflect 71G power edits on then-page 33: – IDD1 from 170/160 to 130/120 for -7E/-75 – IDD3 from 60/60 to 45/40 for -7E/-75 – IDD4 from 160/160 to 130/130 for -7E/-75 – IDD5 from 340/320 to 285/270 for -7E/-75 – IDD6 from 4/4 to 3.5/3.5 for -7E/-75 – IDD7 from 3/3 to 2.5/2.5 for -7E/-75 – IDD7 (low power) from 2/2 to 1.5/1.5 for -7E/-75 Added Capacitance table for FBGA to then-page 34 Added notes 34-36 for FBGA capacitance (MIN) values different from PC133 on thenpage 36 Changed note 9 and 11 V IH(MIN)-VIL (MAX) test conditions from 0V-3V to 0.8V- 2.0V with 1.4V reference level. Corrected Initialization waveform (tCMS and tCMH reversed) on then-page 37 • • • • • • • • • • • Added "FB" FBGA package for x4- and x8-only configurations on then-pages 1 and 3 Added new page with FBGA pinout for x4 and x8 configurations on then-page 2 Removed -8E speed grade reference on then-pages 1, 11, and 33-55 Updated tOH(MIN) value from 2.7ns to 3ns on then-pages 34, 39, 42-48 Updated Mode Register for A12 from unused to reserved on then-page 10 Changed tRC to tRFC for burst AUTO REFRESH commands on then-page 14 Updated MAX -7E/ -75 IDD5 from 300/300 to 340/320 respectively on then-page 33 Added reference "notes appear on page 36" on then-pages 33-35 Removed temp reference and added note 5 to all tables Note 21 updated for tCK=ns units vs. MHz reference Updated "Don't Care" state of the SELF REFRESH MODE diagram on then-page 41 Rev. E – 03/02 Rev. D – 07/01 • • • Rev. C – 03/01 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 92 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Revision History • Updated A0-A11 to A0-A9, A11 as A10 is isolated for AP • Updated Single READ w/o AP to include note 3 at T3 and T4 NOP cmds on then-page 44 • Updated Write w/o AP to show tWR = 2 clks and updated note 2 to on then-page 49 • Updated diagram to correct tWR/tRP to be centered around the end of tRAS on thenpage 50 • Updated single write with AP, T3 to note 4, T4 to note 3, and tWR to note 2 on thenpage 52 • Updated alternating bank write access, aligned tWR and tRP to T7 center on thenpage 53 • Added new page with "FB" FBGA mechanical diagram as then-page 57 • Added new page for FBGA marking decoder as then-page 58 Rev. B – 10/00 • Removed all -7 speed grade references and timing information on then-pages 1,10, and 32–35 • Added (0°C ” T A ” +70°C) range to IDD spec table and AC tables on then-pages 32–34 • Changed -7 to -7E and updated any previous -7 specs to -7E specs on then-pages 36– 54 • Added notation 3 to 8E reference on front page • Added text under AUTO REFRESH paragraph on then-page 13, "All active banks must be PRECHARGED prior to issuing an AUTO REFRESH command. The AUTO REFRESH command should not be issued until the minimum tRP has been met after the PRECHARGE command as shown in the operations section." • Changed "either" to "any" under Power-Down paragraph, 2nd sentence, on thenpage 23 • For IDD Specifications and Conditions table: – Removed any "CAS latency = 3" or "CL = 3" reference under the parameter/ condition column, as this became defined in notes 18 and 32 on then-page 32 – Updated IDD specification table values from TBD to new values – Updated IDD 3 -8E, 75, -7E values to 55mA, 60mA, 60mA, respectively – IDD5 and IDD6 parameters changed from tRC to tRFC • On then-page 35: – Note 11, changed V IL(MIN) to V IH(MIN) – Note 18, changed to "IDD current will increase or decrease in a proportional amount by the amount the frequency is altered for the test condition." – Note 32, changed to "For -8E, CL=2 and t CK=10ns; For -75, CL=3 and t CK=7.5ns; For -7E, CL=2, t CK=7.5ns." – Removed reference to notes 3 through 8 in TSOP package dimensions • Removed notes 3 through 8 on then-page 55, as they apply only to the "B4" version of 64Mb SDR • Changed from Advance to Preliminary Rev. A – 11/99 • Initial release. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 93 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 SDRAM Revision History 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000 www.micron.com/products/support Sales inquiries: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 05/15 EN 94 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. 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