MT4C4M4B1DJ-6

4 MEG x 4 FPM DRAM DRAM FEATURES • Industry-standard x4 pinout, timing, functions, and packages • High-performance, low-power CMOS silicon-gate process • Single power supply (+3.3V ±0.3V or +5V ±0.5V) • All inputs, outputs and clocks are TTL-compatible • Refresh modes: RAS#-ONLY, HIDDEN and CAS#BEFORE-RAS# (CBR) • Optional self refresh (S) for low-power data retention • 11 row, 11 column addresses (2K refresh) or 12 row, 10 column addresses (4K refresh) • FAST-PAGE-MODE (FPM) access • 5V tolerant inputs and I/Os on 3.3V devices MT4LC4M4B1, MT4C4M4B1 MT4LC4M4A1, MT4C4M4A1 For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/mti/msp/html/datasheet.html PIN ASSIGNMENT (Top View) 24/26-Pin SOJ VCC DQ0 DQ1 WE# RAS# **NC/A11 A10 A0 A1 A2 A3 VCC 24/26-Pin TSOP VCC VSS DQ0 DQ3 DQ1 DQ2 WE# CAS# RAS# OE# **NC/A11 A9 A10 A0 A8 A1 A7 A2 A6 A3 A5 VCC A4 VSS 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 VSS DQ3 DQ2 CAS# OE# A9 A8 A7 A6 A5 A4 VSS 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 OPTIONS • Voltage 3.3V 5V • Refresh Addressing 2,048 (2K) rows 4,096 (4K) rows • Packages Plastic SOJ (300 mil) Plastic TSOP (300 mil) • Timing 50ns access 60ns access • Refresh Rates Standard Refresh Self Refresh (128ms period) MARKING LC C B1 A1 DJ TG -5 -6 None S* **NC on 2K refresh and A11 on 4K refresh options. 4 MEG x 4 FPM DRAM PART NUMBERS PART NUMBER MT4LC4M4B1DJ-6 MT4LC4M4B1DJ-6 S MT4LC4M4B1TG-6 MT4LC4M4B1TG-6 S MT4LC4M4A1DJ-6 MT4LC4M4A1DJ-6 S MT4LC4M4A1TG-6 MT4C4M4A1TG-6 S MT4C4M4B1DJ-6 MT4C4M4B1DJ-6 S MT4C4M4B1TG-6 MT4C4M4B1TG-6 S MT4C4M4A1DJ-6 MT4C4M4A1DJ-6 S MT4C4M4A1TG-6 MT4C4M4A1TG-6 S REFRESH V CC ADDRESSING PACKAGE REFRESH 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 5V 5V 5V 5V 5V 5V 5V 5V 2K 2K 2K 2K 4K 4K 4K 4K 2K 2K 2K 2K 4K 4K 4K 4K SOJ SOJ TSOP TSOP SOJ SOJ TSOP TSOP SOJ SOJ TSOP TSOP SOJ SOJ TSOP TSOP Standard Self Standard Self Standard Self Standard Self Standard Self Standard Self Standard Self Standard Self NOTE: 1. The 4 Meg x 4 FPM DRAM base number differentiates the offerings in one place—MT4LC4M4B1. The fifth field distinguishes various options: B1 designates a 2K refresh and A1 designates a 4K refresh for FPM DRAMs. 2. The # symbol indicates signal is active LOW. *Contact factory for availability Part Number Example: MT4LC4M4B1DJ KEY TIMING PARAMETERS SPEED -5 -6 tRC 84ns 110ns tRAC 50ns 60ns tPC 20ns 35ns tAA 25ns 30ns tCAC 13ns 15ns tRP 30ns 40ns 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the column address (the latter 11 bits for 2K and the latter 10 bits for 4K; address pins A10 and A11 are “Don’t Care”). READ and WRITE cycles are selected with the WE# input. A logic HIGH on WE# dictates read mode, while a logic LOW on WE# dictates write mode. During a WRITE cycle, data-in (D) is latched by the falling edge of WE# or CAS#, whichever occurs last. If WE# goes LOW prior to CAS# going LOW, the output pins remain open (High- Z) until the next CAS# cycle, regardless of OE#. A logic HIGH on WE# dictates read mode, while a logic LOW on WE# dictates write mode. During a WRITE cycle, data-in (D) is latched by the falling edge of WE# or CAS#, whichever occurs last. An EARLY WRITE occurs when WE# is taken LOW prior to CAS# falling. A LATE WRITE or READ-MODIFY-WRITE occurs when WE# falls after CAS# is taken LOW. During EARLY WRITE cycles, the data outputs (Q) will remain High-Z regardless of the state of OE#. During LATE WRITE or READ-MODIFY-WRITE cycles, OE# must be taken HIGH to disable the data outputs prior to applying input data. If a LATE WRITE or READMODIFY-WRITE is attempted while keeping OE# LOW, no WRITE will occur, and the data outputs will drive read data from the accessed location. The four data inputs and the four data outputs are routed through four pins using common I/O, and pin direction is controlled by WE# and OE#. The MT4LC4M4B1 and MT4LC4M4A1 must be refreshed periodically in order to retain stored data. Additional columns may be accessed by providing valid column addresses, strobing CAS# and holding RAS# LOW, thus executing faster memory cycles. Returning RAS# HIGH terminates the page mode of operation, i.e., closes the page. DRAM REFRESH Preserve correct memory cell data by maintaining power and executing any RAS# cycle (READ, WRITE) or RAS# REFRESH cycle (RAS#-ONLY, CBR, or HIDDEN) so that all combinations of RAS# addresses (2,048 for 2K and 4,096 for 4K) are executed within tREF (MAX), regardless of sequence. The CBR and SELF REFRESH cycles will invoke the internal refresh counter for automatic RAS# addressing. An optional self refresh mode is also available the “S” version. The self refresh feature is initiated by performing a CBR REFRESH cycle and holding RAS# LOW for the specified tRASS. The “S” option allows the user the choice of a fully static, low-power data retention mode or a dynamic refresh mode at the extended refresh period of 128ms, or 31.25µs per row for a 4K refresh and 62.5µs per row for a 2K refresh, when using a distributed CBR REFRESH. This refresh rate can be applied during normal operation, as well as during a standby or battery backup mode. The self refresh mode is terminated by driving RAS# HIGH for a minimum time of tRPS. This delay allows for the completion of any internal refresh cycles that may be in process at the time of the RAS# LOW-to-HIGH transition. If the DRAM controller uses a distributed CBR refresh sequence, a burst refresh is not required upon exiting self refresh. However, if the DRAM controller utilizes RAS#-ONLY or burst CBR refresh sequence, all rows must be refreshed with a refresh rate of tRC minimum prior to resuming normal operation. FAST PAGE MODE ACCESS Page operations allow faster data operations (READ, WRITE or READ-MODIFY-WRITE) within a rowaddress-defined page boundary. The page cycle is always initiated with a row address strobed in by RAS#, followed by a column address strobed in by CAS#. STANDBY Returning RAS# and CAS# HIGH terminates a memory cycle and decreases chip current to a reduced standby level. The chip is preconditioned for the next cycle during the RAS# HIGH time. 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM FUNCTIONAL BLOCK DIAGRAM – 2K REFRESH WE# CAS# DATA-IN BUFFER 4 NO. 2 CLOCK GENERATOR DATA-OUT BUFFER 4 4 DQ0 DQ1 DQ2 DQ3 OE# COLUMNADDRESS BUFFER(11) REFRESH CONTROLLER COMPLEMENT SELECT 11 11 ROWADDRESS BUFFERS (11) ROW SELECT (2 of 4,096) ROW DECODER 2,048 2,048 2,048 2,048 11 2,048 4,096 x 1,024 x 4 MEMORY ARRAY RAS# NO. 1 CLOCK GENERATOR ROW TRANSFER (1 OF 2) ROW TRANSFER (2 OF 2) VDD VSS A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 11 10 1 COLUMN DECODER 1,024 4 SENSE AMPLIFIERS I/O GATING 1,024 REFRESH COUNTER FUNCTIONAL BLOCK DIAGRAM – 4K REFRESH WE# CAS# DATA-IN BUFFER 4 NO. 2 CLOCK GENERATOR DATA-OUT BUFFER 4 4 DQ0 DQ1 DQ2 DQ3 OE# COLUMNADDRESS BUFFER(10) REFRESH CONTROLLER COMPLEMENT SELECT 12 ROW SELECT (1 of 4096) ROW DECODER A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 10 10 COLUMN DECODER 1,024 4 SENSE AMPLIFIERS I/O GATING 1,024 REFRESH COUNTER 4,096 x 1,024 x 4 MEMORY ARRAY 12 ROWADDRESS BUFFERS (12) 4,096 4,096 12 4,096 RAS# NO. 1 CLOCK GENERATOR VDD Vss 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM ABSOLUTE MAXIMUM RATINGS* Voltage on VCC Pin Relative to VSS 3.3V............................................. ......... -1V to +4.6V 5V................................................ ............ -1V TO +7V Voltage on NC, Inputs or I/O Pins Relative to VSS 3.3V............................................. ......... -1V to +5.5V 5V................................................ ............ -1V TO +7V Operating Temperature, TA (ambient) .... 0°C to +70°C Storage Temperature (plastic) ............ -55°C to +150°C Power Dissipation ................................................... 1W *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (Notes: 5, 6) (VCC (MIN) £ VCC£ VCC (MAX)) PARAMETER/CONDITION SUPPLY VOLTAGE INPUT HIGH VOLTAGE: Valid Logic 1; All inputs, I/Os and any NC INPUT LOW VOLTAGE: Valid Logic 0; All inputs, I/Os and any NC INPUT LEAKAGE CURRENT: Any input at VIN [0V £ VIN £ VCC (MAX)]; All other pins not under test = 0V OUTPUT HIGH VOLTAGE: IOUT = -2mA OUTPUT LOW VOLTAGE: IOUT = 2mA OUTPUT LEAKAGE CURRENT: Any output at VOUT [0V £ VOUT £ VCC (MAX)]; DQ is disabled and in High-Z state SYMBOL VCC VIH VIL II 3.3V MIN MAX 3 2 -1.0 -2 3.6 5.5 0.8 2 MIN 4.5 2.4 -0.5 -2 5V MAX UNITS NOTES 5.5 Vcc+1 0.8 2 V V V µA 24 24 VOH VOL IOZ 2.4 – -5 – 0.4 5 2.4 – -5 – 0.4 5 V V µA 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM ICC OPERATING CONDITIONS AND MAXIMUM LIMITS (Notes: 1, 2, 3, 5, 6) [Vcc (MIN) £ Vcc £ Vcc (MAX)] 3.3V PARAMETER/CONDITION STANDBY CURRENT: TTL (RAS# = CAS# = VIH) STANDBY CURRENT: CMOS (non-“S” version only) (RAS# = CAS# = other inputs = VCC - 0.2V) STANDBY CURRENT: CMOS (“S” version only) (RAS# = CAS# = other inputs = VCC - 0.2V) OPERATING CURRENT: Random READ/WRITE Average power supply current (RAS#, CAS#, address cycling: tRC = tRC [MIN]) OPERATING CURRENT: FAST PAGE MODE Average power supply current (RAS# = VIL, CAS#, address cycling: tPC = tPC [MIN]) REFRESH CURRENT: RAS#-ONLY Average power supply current (RAS# cycling, CAS# = VIH: tRC = tRC [MIN]) REFRESH CURRENT: CBR Average power supply current (RAS#, CAS#, address cycling: tRC = tRC [MIN]) REFRESH CURRENT: Extended (“S” version only) Average power supply current: CAS# = 0.2V or CBR cycling; RAS# = tRAS (MIN); WE# = VCC - 0.2V; A0-A11, OE# and DIN = VCC - 0.2V or 0.2V (DIN may be left open) REFRESH CURRENT: Self (“S” version only) Average power supply current: CBR with RAS# tRASS (MIN) and CAS# held LOW; WE# = VCC - 0.2V; A0-A11, OE# and DIN = VCC - 0.2V or 0.2V (DIN may be left open) 5V 2K 4K 2K 4K SYM SPEED REFRESH REFRESH REFRESH REFRESH UNITS NOTES ICC1 ICC2 ICC2 ALL ALL ALL -5 -6 -5 -6 -5 -6 -5 -6 ALL ICC7 tRC 1 500 150 110 100 110 100 110 100 110 100 300 1 500 150 90 80 100 90 90 80 90 80 300 1 500 150 140 130 110 100 140 130 140 130 300 1 500 150 120 110 100 90 120 110 120 110 300 mA mA µA ICC3 mA 23 ICC4 mA 23 ICC5 mA ICC6 mA µA 4, 7 4, 7 62.5 31.25 62.5 31.25 µs 23 ICC8 ALL 300 300 300 300 µA 4, 7 CAPACITANCE (Note: 6) PARAMETER Input Capacitance: Address pins Input Capacitance: RAS#, CAS#, WE#, OE# Input/Output Capacitance: DQ SYMBOL CI1 CI2 CIO MAX 5 7 7 UNITS pF pF pF 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM AC ELECTRICAL CHARACTERISTICS (Notes: 5, 6, 7, 8, 9, 10, 11, 12) [Vcc (MIN) £ Vcc £ Vcc (MAX)] AC CHARACTERISTICS PARAMETER Access time from column address Column-address hold time (referenced to RAS#) Column-address setup time Row-address setup time Column address to WE# delay time Access time from CAS# Column-address hold time CAS# pulse width CAS# LOW to “Don’t Care” during Self Refresh CAS# hold time (CBR Refresh) CAS# to output in Low-Z CAS# precharge time Access time from CAS# precharge CAS# to RAS# precharge time CAS# hold time CAS# setup time (CBR Refresh) CAS# to WE# delay time WRITE command to CAS# lead time Data-in hold time Data-in setup time Output disable Output enable OE# hold time from WE# during READ-MODIFY-WRITE cycle Output buffer turn-off delay OE# setup prior to RAS# during HIDDEN REFRESH cycle FAST-PAGE-MODE READ or WRITE cycle time FAST-PAGE-MODE READ-WRITE cycle time Access time from RAS# RAS# to column-address delay time Row-address hold time RAS# pulse width RAS# pulse width (FAST PAGE MODE) RAS# pulse width during Self Refresh Random READ or WRITE cycle time RAS# to CAS# delay time READ command hold time (referenced to CAS#) READ command setup time Refresh period (2,048 cycles) Refresh period (4,096 cycles) -5 SYMBOL tAA tAR tASC tASR tAWD tCAC tCAH tCAS tCHD tCHR tCLZ tCP tCPA tCRP tCSH tCSR tCWD tCWL tDH tDS tOD tOE tOEH tOFF tORD tPC tPRWC tRAC tRAD tRAH tRAS tRASP tRASS tRC tRCD tRCH tRCS tREF tREF -6 MAX 25 MIN 45 0 0 49 13 15 10 10 15 10 0 10 5 45 5 35 10 10 0 0 10 12 0 0 25 56 12 10 60 60 100 104 14 0 0 15 10,000 MAX 30 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns µs ns ns ns ns ms ms NOTES MIN 38 0 0 42 8 8 15 8 0 8 5 38 5 28 8 8 0 0 8 0 0 20 47 9 9 50 50 100 84 11 0 0 18 10,000 4 22 13 28 35 4 18 19 19 22 20 12 12 15 15 17, 22 50 60 15 10,000 125,000 10,000 125,000 14 16 32 64 32 64 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM AC ELECTRICAL CHARACTERISTICS (Notes: 5, 6, 7, 8, 9, 10, 11, 12) [Vcc (MIN) £ Vcc £ Vcc (MAX)] AC CHARACTERISTICS PARAMETER Refresh period “S” version RAS# precharge time RAS# to CAS# precharge time RAS# precharge time exiting Self Refresh READ command hold time (referenced to RAS#) RAS# hold time READ-WRITE cycle time RAS# to WE# delay time WRITE command to RAS# lead time Transition time (rise or fall) WRITE command hold time WRITE command hold time (referenced to RAS#) WE# command setup time WRITE command pulse width WE# hold time (CBR Refresh) WE# setup time (CBR Refresh) -5 SYMBOL tREF tRP tRPC tRPS tRRH tRSH tRWC tRWD tRWL tT tWCH tWCR tWCS tWP tWRH tWRP MIN 30 5 90 0 13 116 67 13 2 8 38 0 5 8 8 MAX 128 MIN 40 5 105 0 15 140 79 15 2 10 45 0 5 10 10 -6 MAX 128 UNITS ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES 140 16 19 50 50 18 4, 23 4, 23 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM NOTES 1. 2. 3. All voltages referenced to VSS. This parameter is sampled. VCC = +3.3V or 5.0V; f = 1 MHz. ICC is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs open. Enables on-chip refresh and address counters. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range is ensured. An initial pause of 100µs is required after powerup, followed by eight RAS# refresh cycles (RAS#ONLY or CBR with WE# HIGH), before proper device operation is ensured. The eight RAS# cycle wake-ups should be repeated any time the tREF refresh requirement is exceeded. AC characteristics assume tT = 5ns. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times are measured between VIH and VIL (or between VIL and VIH). In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. If CAS# = VIH, data output is High-Z. If CAS# = VIL, data output may contain data from the last valid READ cycle. Measured with a load equivalent to two TTL gates, 100pF and VOL = 0.8V and VOH = 2V. If CAS# is LOW at the falling edge of RAS#, Q will be maintained from the previous cycle. To initiate a new cycle and clear the data-out buffer, CAS# must be pulsed HIGH for tCP. The tRCD (MAX) limit is no longer specified. tRCD (MAX) was specified as a reference point only. If tRCD was greater than the specified tRCD (MAX) limit, then access time was controlled exclusively by tCAC (tRAC [MIN] no longer applied). With or without the tRCD limit, tAA and tCAC must always be met. The tRAD (MAX) limit is no longer specified. tRAD (MAX) was specified as a reference point only. If tRAD was greater than the specified tRAD (MAX) limit, then access time was controlled exclusively by tAA (tRAC and tCAC no longer applied). With or without the tRAD (MAX) limit, tAA, tRAC, and tCAC must always be met. Either tRCH or tRRH must be satisfied for a READ cycle. tOFF (MAX) defines the time at which the output achieves the open circuit condition and is not referenced to VOH or VOL. tWCS, tRWD, tAWD, and tCWD are not restrictive operating parameters. tWCS applies to EARLY WRITE cycles. tRWD, tAWD, and tCWD apply to READ-MODIFY-WRITE cycles. If tWCS tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain an open circuit throughout the entire cycle. If tRWD ³ tRWD (MIN), tAWD ³ tAWD (MIN), and tCWD ³ tCWD (MIN), the cycle is a READ-MODIFYWRITE and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of data-out is indeterminate. OE# held HIGH and WE# taken LOW after CAS# goes LOW result in a LATE WRITE (OE#-controlled) cycle. tWCS, tRWD, tCWD, and tAWD are not applicable in a LATE WRITE cycle. These parameters are referenced to CAS# leading edge in EARLY WRITE cycles and WE# leading edge in LATE WRITE or READ-MODIFY-WRITE cycles. If OE# is tied permanently LOW, LATE WRITE, or READ-MODIFY-WRITE operations are not permissible and should not be attempted. A HIDDEN REFRESH may also be performed after a WRITE cycle. In this case, WE# = LOW and OE# = HIGH. The 3ns minimum is a parameter guaranteed by design. Column address changed once each cycle. VIH overshoot: VIH (MAX) = VCC + 2V for a pulse width £ 10ns, and the pulse width cannot be greater than one third of the cycle rate. VIL undershoot: VIL (MIN) = -2V for a pulse width £ 10ns, and the pu lse width cannot be greater than one third of the cycle rate. 16. 17. 4. 5. 6. 18. 7. 8. 9. 10. 11. 12. 13. 19. 20. 14. 21. 22. 23. 24. 15. 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM READ CYCLE tRC tRAS V IH V IL tCSH tRSH tCRP V IH V IL tAR tASR V IH V IL tRAD tRAH tASC tCAH tRCD tCAS tRRH tRP RAS# CAS# ADDR ROW tRCS COLUMN tRCH ROW WE# V IH V IL tAA tRAC tCAC tCLZ tOFF V DQ V IOH IOL OPEN VALID DATA OPEN DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAA tAR tASC tASR tCAC tCAH tCAS tCLZ tCRP tCSH tOD tOE -6 MAX 25 MIN 45 0 0 13 15 10 10 0 5 45 12 12 0 15 15 10,000 MAX 30 UNITS ns ns ns ns ns ns ns ns ns ns ns ns SYMBOL tOFF tRAC tRAD tRAH tRAS tRC tRCD tRCH tRCS tRP tRRH tRSH -5 MIN 0 9 9 50 84 11 0 0 30 0 13 10,000 MAX 12 50 MIN 0 12 10 60 104 14 0 0 40 0 15 -6 MAX 15 60 UNITS ns ns ns ns ns ns ns ns ns ns ns ns MIN 38 0 0 8 8 0 5 38 0 10,000 10,000 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM EARLY WRITE CYCLE tRC tRAS V IH V IL tCSH tRSH tCRP V IH V IL tAR tASR ADDR V IH V IL tRAD tRAH tASC tCAH tRCD tCAS tRP RAS# CAS# ROW COLUMN tCWL tRWL tWCS tWCR tWCH tWP ROW WE# V IH V IL tDS tDH V DQ V IOH IOL VALID DATA DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAR tASC tASR tCAH tCAS tCRP tCSH tCWL tDH tDS tRAD -6 MAX MIN 45 0 0 10,000 10 10 5 45 10 10 0 12 10,000 MAX UNITS ns ns ns ns ns ns ns ns ns ns ns SYMBOL tRAH tRAS tRC tRCD tRP tRSH tRWL tWCH tWCR tWCS tWP -5 MIN 9 50 84 11 30 13 13 8 38 0 5 MAX 10,000 MIN 10 60 104 14 40 15 15 10 45 0 5 -6 MAX 10,000 UNITS ns ns ns ns ns ns ns ns ns ns ns MIN 38 0 0 8 8 5 38 8 8 0 9 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM READ-WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE cycles) tRWC tRAS V IH V IL tCSH tRSH tCAS tRP RAS# tCRP V IH V IL tAR tRAD tRAH tRCD CAS# tASR ADDR V IH V IL tASC tCAH ROW COLUMN tRWD tCWD tAWD tCWL tRWL tWP ROW tRCS WE# V IH V IL tAA tRAC tCAC tCLZ tDS VALID D OUT tOE V IH V IL tOD tDH V DQ V IOH IOL OPEN VALID D IN tOEH OPEN OE# DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAA tAR tASC tASR tAWD tCAC tCAH tCAS tCLZ tCRP tCSH tCWD tCWL tDH tDS -6 MAX 25 MIN 45 0 0 49 13 15 10 10 0 5 45 35 10 10 0 10,000 MAX 30 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns SYMBOL tOD tOE tOEH tRAC tRAD tRAH tRAS tRCD tRCS tRP tRSH tRWC tRWD tRWL tWP -5 MIN 0 8 50 9 9 50 11 0 30 13 116 67 13 5 10,000 12 10 60 14 0 40 15 140 79 15 5 MAX 12 12 MIN 0 10 -6 MAX 15 15 60 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns MIN 38 0 0 42 8 8 0 5 38 28 8 8 0 10,000 10,000 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM FAST-PAGE-MODE READ CYCLE tRASP V IH V IL tCSH tCRP V IH V IL tAR tASR ADDR V IH V IL tRAD tRAH tASC tCAH tASC tCAH tASC tCAH tRCD tCAS tPC tCP tCAS tCP tRSH tCAS tCP tRP RAS# CAS# ROW COLUMN COLUMN tRCS tRCH COLUMN tRCS ROW tRRH tRCS WE# V IH V IL tRCH tRCH tAA tRAC tCAC tCLZ DQ V IOH V IOL OPEN tOE V IH V IL VALID DATA tOD tOFF tCLZ tAA tCPA tCAC tOFF tCLZ VALID DATA tOD tAA tCPA tCAC tOFF tOE tOE VALID DATA tOD OPEN OE# DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAA tAR tASC tASR tCAC tCAH tCAS tCLZ tCP tCPA tCRP tCSH tOD -6 MAX 25 MIN 45 0 0 13 15 10 10 0 10 28 35 5 45 12 0 15 10,000 MAX 30 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns SYMBOL tOE tOFF tPC tRAC tRAD tRAH tRASP tRCD tRCH tRCS tRP tRRH tRSH -5 MIN 0 20 9 9 50 11 0 0 30 0 13 125,000 MAX 12 12 50 12 10 60 14 0 0 40 0 15 MIN 0 25 -6 MAX 15 15 60 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns MIN 38 0 0 8 8 0 8 5 38 0 10,000 125,000 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM FAST-PAGE-MODE EARLY WRITE CYCLE tRASP V IH V IL tCSH tCRP V IH V IL tAR tRAD tASR ADDR V IH V IL tRAH tASC tCAH tASC tCAH tASC tCAH tRCD tCAS tPC tCP tCAS tCP tRSH tCAS tCP tRP RAS# CAS# ROW COLUMN tCWL tWCH tWP COLUMN tCWL tWCH tWP COLUMN tCWL tWCH tWP ROW tWCS tWCS tWCS WE# V IH V IL tDS tWCR tDH tDS tDH tDS tRWL tDH V DQ V IOH IOL V IH V IL VALID DATA VALID DATA VALID DATA OE# DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAR tASC tASR tCAH tCAS tCP tCRP tCSH tCWL tDH tDS tPC -6 MAX MIN 45 0 0 10 10 10 5 45 10 10 0 25 MAX UNITS ns ns ns ns ns ns ns ns ns ns ns ns SYMBOL tRAD tRAH tRASP tRCD tRP tRSH tRWL tWCH tWCR tWCS tWP -5 MIN 9 9 50 11 30 13 13 8 38 0 5 MAX MIN 12 10 60 14 40 15 15 10 45 0 5 -6 MAX UNITS ns ns ns ns ns ns ns ns ns ns ns MIN 38 0 0 8 8 8 5 38 8 8 0 20 125,000 125,000 10,000 10,000 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM FAST-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE cycles) tRASP V IH V IL tCSH tCRP V IH V IL tAR tRAD tRAH tRCD tCAS NOTE 1 tCP tPC tPRWC tCAS tRSH tCP tCAS tCP tRP RAS# CAS# tASR ADDR V IH V IL tASC tCAH tASC tCAH tASC tCAH ROW COLUMN tRWD tRCS tCWL tWP tAWD tCWD COLUMN COLUMN tRWL tCWL tAWD tCWD tWP ROW tCWL tWP tAWD tCWD WE# V IH V IL tAA tRAC tDH tDS tCAC tCLZ tAA tCPA tCAC tCLZ VALID D OUT VALID DIN VALID D OUT VALID D IN tAA tDH tDS tCPA tCAC tCLZ VALID D OUT VALID D IN tDH tDS DQ V IOH V IOL OPEN OPEN tOD tOE OE# V IH V IL tOE tOD tOE tOD tOEH DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAA tAR tASC tASR tAWD tCAC tCAH tCAS tCLZ tCP tCPA tCRP tCSH tCWD tCWL tDH tDS -6 MAX 25 MIN 45 0 0 49 13 15 10 10 0 10 28 35 5 45 35 10 10 0 10,000 MAX 30 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns SYMBOL tOD tOE tOEH tPC tPRWC tRAC tRAD tRAH tRASP tRCD tRCS tRP tRSH tRWD tRWL tWP -5 MIN 0 8 20 47 50 9 9 50 11 0 30 13 67 13 5 12 10 60 14 0 40 15 79 15 5 MAX 12 12 MIN 0 10 25 56 -6 MAX 15 15 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns MIN 38 0 0 42 8 8 0 8 5 38 28 8 8 0 60 10,000 125,000 125,000 NOTE: 1. tPC is for LATE WRITE only. 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM FAST-PAGE-MODE READ EARLY WRITE CYCLE (Pseudo READ-MODIFY-WRITE) t RASP V IH V IL t RSH t CSH t CRP CAS# V IH V IL t AR t RAD t ASR ADDR V IH V IL t RAH t ASC t CAH t ASC t CAH t RCD t CAS t CP t PC t CAS t CP t RP RAS# ROW COLUMN COLUMN t CWL ROW t RCS t WCS WE# V IH V IL t CAC t CLZ V OH V OL NOTE 1 t OFF t DS VALID DATA t AA t RAC t RWL t WP t WCH t DH DQ OPEN VALID DATA DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAA tAR tASC tASR tCAC tCAH tCAS tCLZ tCP tCRP tCSH tCWL tDH tDS -6 MAX 25 MIN 45 0 0 13 15 10 10,000 10 0 10 5 45 10 10 0 10,000 MAX 30 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns SYMBOL tOFF tPC tRAC tRAD tRAH tRASP tRCD tRCS tRP tRSH tRWL tWCH tWCS tWP -5 MIN 0 20 50 9 9 50 11 0 30 13 13 8 0 5 125,000 12 10 60 14 0 40 15 15 10 0 5 MAX 12 MIN 0 25 -6 MAX 15 60 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns MIN 38 0 0 8 8 0 8 5 38 8 8 0 125,000 NOTE: 1. Do not drive data prior to tristate. 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM RAS#-ONLY REFRESH CYCLE (OE# and WE# = DON’T CARE) tRC tRAS V IH V IL tCRP V IH V IL tASR ADDR V IH V IL tRAH tRPC tRP RAS# CAS# ROW ROW V DQ V OH OL OPEN CBR REFRESH CYCLE (Addresses and OE# = DON’T CARE) tRP RAS# V IH V IL tRPC tCP CAS# V IH V IL V OH V OL tWRP WE# V IH V IL tWRH OPEN tWRP tWRH tCSR tCHR tRPC tCSR tCHR tRAS NOTE 1 tRP tRAS DQ DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tASR tCHR tCP tCRP tCSR tRAH -6 MAX MIN 0 10 10 5 5 10 MAX UNITS ns ns ns ns ns ns SYMBOL tRAS tRC tRP tRPC tWRH tWRP -5 MIN 50 84 30 5 8 8 MAX 10,000 MIN 60 104 40 5 10 10 -6 MAX 10,000 UNITS ns ns ns ns ns ns MIN 0 8 8 5 5 9 NOTE: 1. End of CBR REFRESH cycle. 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM HIDDEN REFRESH CYCLE 1 (WE# = HIGH; OE# = LOW) tRAS RAS# V IH V IL tCRP V IH V IL tAR tRAD tASR V IH V IL tRAH tASC tCAH tRCD tRSH tCHR tRP tRAS CASL#/CASH# ADDR ROW COLUMN tAA tRAC tCAC tCLZ tOFF V DQx V IOH IOL OPEN t OE t ORD VALID DATA tOD OPEN OE# V IH V IL DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAA tAR tASC tASR tCAC tCAH tCHR tCLZ tCRP tOD -6 MAX 25 MIN 45 0 0 13 15 10 10 0 5 12 0 15 MAX 30 UNITS ns ns ns ns ns ns ns ns ns ns SYMBOL tOE tOFF tORD tRAC tRAD tRAH tRAS tRCD tRP tRSH -5 MIN 0 0 9 9 50 11 30 13 10,000 MAX 12 12 50 12 10 60 14 40 15 MIN 0 0 -6 MAX 15 15 60 UNITS ns ns ns ns ns ns 10,000 ns ns ns ns MIN 38 0 0 8 8 0 5 0 NOTE: 1. A HIDDEN REFRESH may also be performed after a WRITE cycle. In this case, WE# is LOW and OE# is HIGH. 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM SELF REFRESH CYCLE (Addresses and OE# = DON’T CARE) tRP RAS# V IH V IL tRPC tCP CAS# V IH V IL OPEN tWRP WE# V IH V IL tWRH tWRP tWRH tCSR tCHR tRPC tCSR tCHR tRAS tRP tRAS Q DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tCHD tCP tCSR tRASS tRP MIN 15 8 5 100 30 MAX MIN 15 10 5 100 40 -6 MAX UNITS ns ns ns µs ns SYMBOL tRPC tRPS tWRH tWRP MIN 5 90 8 8 -5 MAX MIN 5 105 10 10 -6 MAX UNITS ns ns ns ns NOTE: 1. Once tRASS (MIN) is met and RAS# remains LOW, the DRAM will enter self refresh mode. 2. Once tRPS is satisfied, a complete burst of all rows should be executed if RAS#-only or burst CBR refresh is used. 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 18 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM 24/26-PIN PLASTIC SOJ (300 mil) .679 (17.25) .673 (17.09) .305 (7.75) .299 (7.59) .340 (8.64) .330 (8.38) PIN #1 INDEX .050 (1.27) TYP .600 (15.24) TYP .037 (0.94) MAX DAMBAR PROTRUSION .032 (0.81) .026 (0.66) .105 (2.67) .090 (2.29) .112 (2.84) .102 (2.59) .142 (3.61) .132 (3.35) SEATING PLANE .020 (0.51) .015 (0.38) .040 (1.02) R .030 (0.76) .275 (6.99) .260 (6.61) NOTE: MAX or typical where noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01" per side. 1. All dimensions in inches (millimeters) 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 19 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM 24/26-PIN PLASTIC TSOP (300 mil) .678 (17.23) .672 (17.07) 26 SEE DETAIL A .367 (9.32) .359 (9.12) .302 (7.67) .298 (7.57) 1 PIN #1 INDEX .050 (1.27) TYP .020 (0.50) .012 (0.30) 13 .007 (0.18) .005 (0.13) .004 (0.10) .047 (1.20) MAX .008 (0.20) .002 (0.05) DETAIL A .010 (0.25) GAGE PLANE SEATING PLANE .024 (0.60) .016 (0.40) .0315 (0.80) TYP NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01" per side. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark of Micron Technology, Inc. 4 Meg x 4 FPM DRAM D49_5V.p65 – Rev. 5/00 20 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc.