MT4HTF1664AY-53EB1

128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM UDIMM MT4HTF1664AY – 128MB MT4HTF3264AY – 256MB MT4HTF6464AY – 512MB Features Figure 1: 240-Pin UDIMM (MO-237 R/C C) • 240-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 128MB (16 Meg x 64), 256MB (32 Meg x 64), 512MB (64 Meg x 64) • VDD = VDDQ = 1.8V • VDDSPD = 1.7–3.6V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent operation • Programmable CAS latency (CL) • Posted CAS additive latency (AL) • WRITE latency = READ latency - 1 tCK • Programmable burst lengths (BL): 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination (ODT) • Serial presence detect (SPD) with EEPROM • Gold edge contacts • Single rank Module height 30.0mm (1.18in) Options • Operating temperature – Commercial (0°C ≤ TA ≤ +70°C) – Industrial (–40°C ≤ TA ≤ +85°C)1 • Package – 240-pin DIMM (lead-free) • Frequency/CL2 – 2.5ns @ CL = 5 (DDR2-800)4 – 2.5ns @ CL = 6 (DDR2-800)4 – 3.0ns @ CL = 5 (DDR2-667) – 3.75ns @ CL = 4 (DDR2-533)3 – 5.0ns @ CL = 3 (DDR2-400)3 Notes: Marking None I Y -80E -800 -667 -53E -40E 1. Contact Micron for industrial temperature module offerings. 2. CL = CAS (READ) latency. 3. Contact Micron for product availability. 4. Not available in 128MB and 256MB. Table 1: Key Timing Parameters Data Rate (MT/s) tRCD tRP tRC CL = 3 (ns) (ns) (ns) 533 400 12.5 12.5 55 533 400 15 15 55 667 553 400 15 15 55 – – 553 400 15 15 55 – – 400 400 15 15 55 Speed Grade Industry Nomenclature CL = 6 CL = 5 CL = 4 -80E PC2-6400 800 800 -800 PC2-6400 800 667 -667 PC2-5300 – -53E PC2-4200 -40E PC2-3200 PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Features Table 2: Addressing Parameter 128MB 256MB 512MB 8K 8K 8K 8K A[12:0] 8K A[12:0] 8K A[12:0] Device bank address 4 BA[1:0] 4 BA[1:0] 8 BA[2:0] Device configuration 256Mb (16 Meg x 16) 512Mb (32 Meg x 16) 1Gb (64 Meg x 16) 512 A[8:0] 1K A[9:0] 1K A[9:0] 1 S0# 1 S0# 1 S0# Refresh count Row address Column address Module rank address Table 3: Part Numbers and Timing Parameters – 128MB Modules (End of Life) Base device: MT47H16M16,1 256Mb DDR2 SDRAM Module Part Number2 Density Configuration Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) MT4HTF1664A(I)Y-667__ 128MB 16 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT4HTF1664A(I)Y-53E__ 128MB 16 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4 MT4HTF1664A(I)Y-40E__ 128MB 16 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3 Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) Table 4: Part Numbers and Timing Parameters – 256MB Modules Base device: MT47H32M16,1 512Mb DDR2 SDRAM Module Part Number2 Density Configuration MT4HTF3264A(I)Y-80E__ 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF3264A(I)Y-800__ 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF3264A(I)Y-667__ 256MB 32 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT4HTF3264A(I)Y-53E__ 256MB 32 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4 MT4HTF3264A(I)Y-40E__ 256MB 32 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3 Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) Table 5: Part Numbers and Timing Parameters – 512MB Modules Base device: MT47H64M16,1 1Gb DDR2 SDRAM Module Part Number2 Density Configuration MT4HTF6464A(I)Y-80E__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF6464A(I)Y-800__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF6464A(I)Y-667__ 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT4HTF6464A(I)Y-53E__ 512MB 64 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4 MT4HTF6464A(I)Y-40E__ 512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3 Notes: 1. The data sheet for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT4HTF3264AY-667E1. PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Pin Assignments Pin Assignments Table 6: Pin Assignments 240-Pin UDIMM Front 240-Pin UDIMM Back Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 VREF 31 DQ19 61 A4 91 VSS 121 VSS 151 VSS 181 VDDQ 211 DM5 2 VSS 32 VSS 62 VDDQ 92 DQS5# 122 DQ4 152 DQ28 182 A3 212 NC 3 DQ0 33 DQ24 63 A2 93 DQS5 123 DQ5 153 DQ29 183 A1 213 VSS 4 DQ1 34 DQ25 64 VDD 94 VSS 124 VSS 154 VSS 184 VDD 214 DQ46 5 VSS 35 VSS 65 VSS 95 DQ42 125 DM0 155 DM3 185 CK0 215 DQ47 6 DQS0# 36 DQS3# 66 VSS 96 DQ43 126 NC 156 NC 186 CK0# 216 VSS 7 DQS0 37 DQS3 67 VDD 97 VSS 127 VSS 157 VSS 187 VDD 217 DQ52 8 VSS 38 VSS 68 NC 98 DQ48 128 DQ6 158 DQ30 188 A0 218 DQ53 9 DQ2 39 DQ26 69 VDD 99 DQ49 129 DQ7 159 DQ31 189 VDD 219 VSS 10 DQ3 40 DQ27 70 A10 100 VSS 130 VSS 160 VSS 190 BA1 220 CK2 11 VSS 41 VSS 71 BA0 101 SA2 131 DQ12 161 NC 191 VDDQ 221 CK2# 12 DQ8 42 NC 72 VDDQ 102 NC 132 DQ13 162 NC 192 RAS# 222 VSS 13 DQ9 43 NC 73 WE# 103 VSS 133 VSS 163 VSS 193 S0# 223 DM6 14 VSS 44 VSS 74 CAS# 104 DQS6# 134 DM1 164 NC 194 VDDQ 224 NC 15 DQS1# 45 NC 75 VDDQ 105 DQS6 135 NC 165 NC 195 ODT0 225 VSS 16 DQS1 46 NC 76 NC 106 VSS 136 VSS 166 VSS 196 NC 226 DQ54 17 VSS 47 VSS 77 NC 107 DQ50 137 CK1 167 NC 197 VDD 227 DQ55 18 NC 48 NC 78 VDDQ 108 DQ51 138 CK1# 168 NC 198 VSS 228 VSS 19 NC 49 NC 79 VSS 109 VSS 139 VSS 169 VSS 199 DQ36 229 DQ60 20 VSS 50 VSS 80 DQ32 110 DQ56 140 DQ14 170 VDDQ 200 DQ37 230 DQ61 21 DQ10 51 VDDQ 81 DQ33 111 DQ57 141 DQ15 171 NC 201 VSS 231 VSS 22 DQ11 52 CKE0 82 VSS 112 VSS 142 VSS 172 VDD 202 DM4 232 DM7 23 VSS 53 VDD 83 DQS4# 113 DQS7# 143 DQ20 173 NC 203 NC 233 NC 84 DQS4 114 DQS7 144 DQ21 174 NC 204 VSS 234 VSS 85 VSS 115 VSS 145 VSS 175 VDDQ 205 DQ38 235 DQ62 24 DQ16 54 NC/BA21 25 DQ17 55 NC 26 VSS 56 VDDQ 86 DQ34 116 DQ58 146 DM2 176 A12 206 DQ39 236 DQ63 27 DQS2# 57 A11 87 DQ35 117 DQ59 147 NC 177 A9 207 VSS 237 VSS 28 DQS2 58 A7 88 VSS 118 VSS 148 VSS 178 VDD 208 DQ44 238 VDDSPD 29 VSS 59 VDD 89 DQ40 119 SDA 149 DQ22 179 A8 209 DQ45 239 SA0 30 DQ18 60 A5 90 DQ41 120 SCL 150 DQ23 180 A6 210 VSS 240 SA1 Note: PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 1. Pin 54 is NC for 128MB and 256MB or BA2 for 512MB. 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Pin Descriptions Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Description Ax Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. See the Pin Assignments Table for density-specific addressing information. BAx Input Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA define which mode register (MR0, MR1, MR2, and MR3) is loaded during the LOAD MODE command. CKx, CK#x Input Clock: Differential clock inputs. All control, command, and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. CKEx Input Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DDR2 SDRAM. DMx, Input Data mask (x8 devices only): DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH, along with that input data, during a write access. Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins. ODTx Input On-die termination: Enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR2 SDRAM. When enabled in normal operation, ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command. Par_In Input Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered. RESET# Input Reset: Asynchronously forces all registered outputs LOW when RESET# is LOW. This signal can be used during power-up to ensure that CKE is LOW and DQ are High-Z. S#x Input Chip select: Enables (registered LOW) and disables (registered HIGH) the command decoder. SAx Input Serial address inputs: Used to configure the SPD EEPROM address range on the I2C bus. SCL Input Serial clock for SPD EEPROM: Used to synchronize communication to and from the SPD EEPROM on the I2C bus. CBx I/O Check bits. Used for system error detection and correction. DQx I/O Data input/output: Bidirectional data bus. DQSx, DQS#x I/O Data strobe: Travels with the DQ and is used to capture DQ at the DRAM or the controller. Output with read data; input with write data for source synchronous operation. DQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Pin Descriptions Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on the I2C bus. RDQSx, RDQS#x Output Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS is output with read data only and is ignored during write data. When RDQS is disabled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled and differential data strobe mode is enabled. Err_Out# Description Output Parity error output: Parity error found on the command and address bus. (open drain) VDD/VDDQ Supply Power supply: 1.8V ±0.1V. The component VDD and VDDQ are connected to the module VDD. VDDSPD Supply SPD EEPROM power supply: 1.7–3.6V. VREF Supply Reference voltage: VDD/2. VSS Supply Ground. NC – No connect: These pins are not connected on the module. NF – No function: These pins are connected within the module, but provide no functionality. NU – Not used: These pins are not used in specific module configurations/operations. RFU – Reserved for future use. PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Functional Block Diagram Functional Block Diagram Figure 2: Functional Block Diagram S0# VSS CS# DQS0 DQS0# DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DQS1# DM1 DQ DQ DQ DQ DQ DQ DQ DQ DQS2 DQS2# DM2 DQS5 DQS5# DM5 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DQS3# DM3 DQ DQ DQ DQ DQ DQ DQ DQ DQS# DQ DM DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN DQ DQ DQ DQ DQ DQ DQ DQ ODT0 U3 DQ DQ DQ DQ DQ DQ DQ DQ DQS7 DQS7# DM7 DQS# DQ DM DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DQ DQ DQ DQ DQ DQ DQ DQ 6 ODT0: DDR2 SDRAM U5 SPD EEPROM WP A0 A1 A2 SDA VSS SA0 SA1 SA2 CK0 CK0# DQS# DQ DM DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 Vss SCL CS# DQS6 DQS6# DM6 BA[2:0]: DDR2 SDRAM A[12:0]: DDR2 SDRAM RAS#: DDR2 SDRAM CAS#: DDR2 SDRAM WE#: DDR2 SDRAM CKE0: DDR2 SDRAM Vss DQ DQ DQ DQ DQ DQ DQ DQ CS# U2 BA[2/1:0] A[12:0] RAS# CAS# WE# CKE0 DQS# DQ DM DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQ DQ DQ DQ DQ DQ DQ DQ DQS# DQ DM DQ DQ DQ DQ DQ DQ DQ DQ DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 U1 DQS# DQ DM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS# DQ DM DQS4 DQS4# DM4 DQS# DQ DM CS# CK1 CK1# DDR SDRAM x 2 CK2 CK2# DDR SDRAM x 2 VDDSPD U4 SPD EEPROM VDD/VDDQ DDR2 SDRAM VREF DDR2 SDRAM VSS DDR2 SDRAM Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM General Description General Description DDR2 SDRAM modules are high-speed, CMOS dynamic random access memory modules that use internally configured 4 or 8-bank DDR2 SDRAM devices. DDR2 SDRAM modules use DDR architecture to achieve high-speed operation. DDR2 architecture is essentially a 4n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR2 SDRAM module effectively consists of a single 4n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals. A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM device during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK. Serial Presence-Detect EEPROM Operation DDR2 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations between the master (system logic) and the slave EEPROM device occur via a standard I2C bus using the DIMM’s SCL (clock) SDA (data), and SA (address) pins. Write protect (WP) is connected to VSS, permanently disabling hardware write protection. PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Electrical Specifications Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in the device data sheet are not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 8: Absolute Maximum Ratings Symbol Parameter Min Max Units VDD/VDDQ VDD/VDDQ supply voltage relative to VSS –0.5 2.3 V VIN, VOUT Voltage on any pin relative to VSS –0.5 2.3 V Input leakage current; Any input 0V ≤ VIN ≤ VDD; Address inputs, RAS#, CAS#, WE#, S#, CKE, VREF input 0V ≤ VIN ≤ 0.95V; (All other pins not ODT, BA under test = 0V) –20 20 µA CK, CK# –10 10 DM –5 5 DQ, DQS, DQS# –5 5 µA –8 8 µA 0 70 °C –40 85 °C 0 85 °C –40 95 °C II IOZ IVREF Output leakage current; 0V ≤ VOUT ≤ VDDQ; DQ and ODT are disabled VREF leakage current; VREF = valid VREF level TA Module ambient operating temperature Commercial TC1 DDR2 SDRAM component operating temperature2 Industrial Notes: PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN Commercial Industrial 1. The refresh rate is required to double when TC exceeds 85°C. 2. For further information, refer to technical note TN-00-08: "Thermal Applications," available on Micron’s Web site. 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM DRAM Operating Conditions DRAM Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron's Web site. Module speed grades correlate with component speed grades. Table 9: Module and Component Speed Grades DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade Component Speed Grade -1GA -187E -80E -25E -800 -25 -667 -3 -53E -37E -40E -5E Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system's memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications IDD Specifications Table 10: DDR2 IDD Specifications and Conditions – 128MB Values shown for MT47H16M16 DDR2 SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter Symbol -667 -53E -40E Units Operating one bank active-precharge current:tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD0 360 320 300 mA Operating one bank active-read-precharge current: IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD), tRCD = tRCD (I ); CKE is HIGH, S# is HIGH between valid commands; AdDD dress bus inputs are switching; Data pattern is same as IDD4W IDD1 400 360 340 mA Precharge power-down current: All device banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating IDD2P 20 20 20 mA Precharge quiet standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs are floating IDD2Q 200 140 100 mA Precharge standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus inputs are switching IDD2N 160 140 120 mA Active power-down current: All device banks open; tCK = Fast PDN exit tCK (I ); CKE is LOW; Other control and address bus inputs MR[12] = 0 DD are stable; Data bus inputs are floating Slow PDN exit MR[12] = 1 IDD3P 120 100 80 mA 24 24 24 Active standby current: All device banks open; tCK = tCK (IDD), tRAS = tRAS MAX (I ), tRP = tRP (I ); CKE is HIGH, S# is HIGH between valid comDD DD mands; Other control and address bus inputs are switching; Data bus inputs are switching IDD3N 220 160 120 mA Operating burst write current: All device banks open; Continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (I ); CKE is HIGH, S# is HIGH between valid commands; Address DD bus inputs are switching; Data bus inputs are switching IDD4W 860 720 560 mA Operating burst read current: All device banks open; Continuous burst read, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4R 760 640 480 mA Burst refresh current:tCK = tCK (IDD); REFRESH command at every tRFC (IDD) interval; CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD5 720 680 660 mA Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are floating; Data bus inputs are floating IDD6 20 20 20 mA PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications Table 10: DDR2 IDD Specifications and Conditions – 128MB (Continued) Values shown for MT47H16M16 DDR2 SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter Symbol -667 -53E -40E Units Operating bank interleave read current: All device banks interleaving reads; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK (I ), tRC = tRC (I ), tRRD = tRRD (I ), tRCD = tRCD (I ); CKE is HIGH, DD DD DD DD S# is HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 11 IDD7 1000 960 920 mA Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications Table 11: DDR2 IDD Specifications and Conditions – 256MB Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet -80E/ Parameter Symbol -800 -667 -53E -40E Units Operating one bank active-precharge current:tCK = tCK (IDD), tRC = tRC (I ), tRAS = tRAS MIN (I ); CKE is HIGH, S# is HIGH between valid DD DD commands; Address bus inputs are switching; Data bus inputs are switching IDD0 540 480 440 440 mA Operating one bank active-read-precharge current: IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data pattern is same as IDD4W IDD1 660 600 540 520 mA Precharge power-down current: All device banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating IDD2P 28 28 28 28 mA Precharge quiet standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs are floating IDD2Q 260 220 180 160 mA Precharge standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus inputs are switching IDD2N 280 240 200 180 mA Active power-down current: All device banks open; tCK Fast PDN exit = tCK (IDD); CKE is LOW; Other control and address bus in- MR[12] = 0 puts are stable; Data bus inputs are floating Slow PDN exit MR[12] = 1 IDD3P 160 140 120 100 mA 48 48 48 48 Active standby current: All device banks open; tCK = tCK (IDD), tRAS = tRAS MAX (I ), tRP = tRP (I ); CKE is HIGH, S# is HIGH between valid comDD DD mands; Other control and address bus inputs are switching; Data bus inputs are switching IDD3N 300 280 240 200 mA Operating burst write current: All device banks open; Continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4W 1180 1000 820 640 mA Operating burst read current: All device banks open; Continuous burst read, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4R 1100 940 780 620 mA Burst refresh current:tCK = tCK (IDD); REFRESH command at every tRFC (IDD) interval; CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD5 920 740 700 680 mA Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are floating; Data bus inputs are floating IDD6 28 28 28 28 mA PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications Table 11: DDR2 IDD Specifications and Conditions – 256MB (Continued) Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet -80E/ Parameter Symbol -800 -667 -53E -40E Units Operating bank interleave read current: All device banks interleaving reads; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 13 IDD7 1480 1400 1360 1360 mA Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications Table 12: DDR2 IDD Specifications and Conditions (Die Revision A) – 512MB Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) component data sheet -80E/ Parameter Symbol -800 -667 -53E -40E Units Operating one bank active-precharge current:tCK = tCK (IDD), tRC = tRC (I ), tRAS = tRAS MIN (I ); CKE is HIGH, S# is HIGH between valid DD DD commands; Address bus inputs are switching; Data bus inputs are switching IDD0 600 540 440 440 mA Operating one bank active-read-precharge current: IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data pattern is same as IDD4W IDD1 700 520 480 460 mA Precharge power-down current: All device banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating IDD2P 28 28 28 28 mA Precharge quiet standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs are floating IDD2Q 300 260 180 160 mA Precharge standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus inputs are switching IDD2N 320 280 200 160 mA Active power-down current: All device banks open; tCK Fast PDN exit = tCK (IDD); CKE is LOW; Other control and address bus in- MR[12] = 0 puts are stable; Data bus inputs are floating Slow PDN exit MR[12] = 1 IDD3P 180 160 140 140 mA 56 56 56 56 Active standby current: All device banks open; tCK = tCK (IDD), tRAS = tRAS MAX (I ), tRP = tRP (I ); CKE is HIGH, S# is HIGH between valid comDD DD mands; Other control and address bus inputs are switching; Data bus inputs are switching IDD3N 340 300 240 220 mA Operating burst write current: All device banks open; Continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4W 1260 800 720 640 mA Operating burst read current: All device banks open; Continuous burst read, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4R 1280 880 720 640 mA Burst refresh current:tCK = tCK (IDD); REFRESH command at every tRFC (IDD) interval; CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD5 1120 1080 1000 960 mA Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are floating; Data bus inputs are floating IDD6 28 28 28 28 mA PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications Table 12: DDR2 IDD Specifications and Conditions (Die Revision A) – 512MB (Continued) Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) component data sheet -80E/ Parameter Symbol -800 -667 -53E -40E Units Operating bank interleave read current: All device banks interleaving reads; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 15 IDD7 1760 1400 1360 1320 mA Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications Table 13: DDR2 IDD Specifications and Conditions (Die Revision E) – 512MB Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (32 Meg x 16) component data sheet -80E/ Parameter Symbol -800 -667 -53E -40E Units Operating one bank active-precharge current:tCK = tCK (IDD), tRC = tRC (I ), tRAS = tRAS MIN (I ); CKE is HIGH, S# is HIGH between valid DD DD commands; Address bus inputs are switching; Data bus inputs are switching IDD0 600 540 440 440 mA Operating one bank active-read-precharge current: IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data pattern is same as IDD4W IDD1 700 520 480 460 mA Precharge power-down current: All device banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating IDD2P 28 28 28 28 mA Precharge quiet standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs are floating IDD2Q 300 260 180 160 mA Precharge standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus inputs are switching IDD2N 320 280 200 160 mA Active power-down current: All device banks open; tCK Fast PDN exit = tCK (IDD); CKE is LOW; Other control and address bus in- MR[12] = 0 puts are stable; Data bus inputs are floating Slow PDN exit MR[12] = 1 IDD3P 160 120 120 120 mA 40 40 40 40 Active standby current: All device banks open; tCK = tCK (IDD), tRAS = tRAS MAX (I ), tRP = tRP (I ); CKE is HIGH, S# is HIGH between valid comDD DD mands; Other control and address bus inputs are switching; Data bus inputs are switching IDD3N 340 300 240 220 mA Operating burst write current: All device banks open; Continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4W 1260 800 720 640 mA Operating burst read current: All device banks open; Continuous burst read, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4R 1280 880 720 640 mA Burst refresh current:tCK = tCK (IDD); REFRESH command at every tRFC (IDD) interval; CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD5 1120 1080 1000 960 mA Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are floating; Data bus inputs are floating IDD6 28 28 28 28 mA PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications Table 13: DDR2 IDD Specifications and Conditions (Die Revision E) – 512MB (Continued) Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (32 Meg x 16) component data sheet -80E/ Parameter Symbol -800 -667 -53E -40E Units Operating bank interleave read current: All device banks interleaving reads; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 17 IDD7 1760 1400 1320 1200 mA Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Serial Presence-Detect Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 14: SPD EEPROM Operating Conditions Parameter/Condition Symbol Min Max Units VDDSPD 1.7 3.6 V Input high voltage: logic 1; All inputs VIH VDDSPD × 0.7 VDDSPD + 0.5 V Input low voltage: logic 0; All inputs VIL –0.6 VDDSPD × 0.3 V Output low voltage: IOUT = 3mA Supply voltage VOL – 0.4 V Input leakage current: VIN = GND to VDD ILI 0.1 3 µA Output leakage current: VOUT = GND to VDD ILO 0.05 3 µA Standby current ISB 1.6 4 µA Power supply current, READ: SCL clock frequency = 100 kHz ICCR 0.4 1 mA Power supply current, WRITE: SCL clock frequency = 100 kHz ICCW 2 3 mA Table 15: SPD EEPROM AC Operating Conditions Symbol Min Max Units Notes SCL LOW to SDA data-out valid Parameter/Condition tAA 0.2 0.9 µs 1 Time bus must be free before a new transition can start tBUF 1.3 – µs Data-out hold time tDH 200 – ns SDA and SCL fall time tF – 300 ns 2 SDA and SCL rise time tR – 300 ns 2 Data-in hold time tHD:DAT 0 – µs Start condition hold time tHD:STA 0.6 – µs tHIGH 0.6 – µs tI – 50 µs tLOW 1.3 – µs tSCL – 400 kHz Data-in setup time tSU:DAT 100 – ns Start condition setup time tSU:STA 0.6 – µs Stop condition setup time tSU:STO 0.6 – µs tWRC – 10 ms Clock HIGH period Noise suppression time constant at SCL, SDA inputs Clock LOW period SCL clock frequency WRITE cycle time Notes: PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 3 4 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and the falling or rising edge of SDA. 2. This parameter is sampled. 3. For a restart condition or following a WRITE cycle. 4. The SPD EEPROM WRITE cycle time (tWRC) is the time from a valid stop condition of a write sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pullup resistance, and the EEPROM does not respond to its slave address. 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Module Dimensions Module Dimensions Figure 3: 240-Pin DDR2 UDIMM Front view 2.70 (0.106) MAX 133.50 (5.256) 133.20 (5.244) 2.00 (0.079) R (4X) U1 U2 U3 U4 30.50 (1.20) 29.85 (1.175) U5 17.78 (0.70) TYP 2.50 (0.098) D (2X) 2.30 (0.091) TYP 0.76 (0.030) R Pin 1 2.20 (0.087) TYP 1.0 (0.039) TYP 1.0 (0.039) TYP 10.0 (0.394) TYP 0.80 (0.031) TYP 1.37 (0.054) 1.17 (0.046) Pin 120 70.68 (2.78) TYP 123.0 (4.840) TYP Back view No components this side of module 3.05 (0.12) TYP Pin 240 Pin 121 5.0 (0.197) TYP 63.0 (2.48) TYP 55.0 (2.165) TYP Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for additional design dimensions. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef80ed6fda htf4c16_32_64x64ay – Rev. H 3/10 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2003 Micron Technology, Inc. All rights reserved.