MT54W1MH18BF-5

2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM 18Mb QDR™II SRAM 2-WORD BURST MT54W2MH8B MT54W1MH18B MT54W512H36B Features Figure 1: 165-Ball FBGA • DLL circuitry for accurate output data placement • Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE operation • Fast clock to valid data times • Full data coherency, providing most current data • Two-tick burst counter for low DDR transaction size • Double data rate operation on read and write ports • Two input clocks (K and K#) for precise DDR timing at clock rising edges only • Two output clocks (C and C#) for precise flight time and clock skew matching—clock and data delivered together to receiving device • Optional-use echo clocks (CQ and CQ#) for flexible receive data synchronization • Single address bus • Simple control logic for easy depth expansion • Internally self-timed, registered writes • Core VDD = 1.8V (±0.1V); I/O VDDQ = 1.5V to VDD (±0.1V) HSTL • Clock-stop capability with µs restart • 13mm x 15mm, 1mm pitch, 11 x 15 grid FBGA package • User-programmable impedance output • JTAG boundary scan Options • Clock Cycle Timing 4ns (250 MHz) 5ns (200 MHz) 6ns (167 MHz) 7.5ns (133 MHz) • Configurations 2 Meg x 8 1 Meg x 18 512K x 36 • Package 165-ball, 13mm x 15mm FBGA • Operating Temperature Range Commercial (0°C £ TA £ +70°C) Table 1: PART NUMBER DESCRIPTION MT54W2MH8BF-xx MT54W1MH18BF-xx MT54W512H36BF-xx 2 Meg x 8, QDRIIb2 FBGA 1 Meg x 18, QDRIIb2 FBGA 512K x 36, QDRIIb2 FBGA General Description The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, lowpower CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separate DDR (double data rate) ports to access the memory array. The read port has dedicated data outputs to support READ operations. The write port has dedicated data inputs to support WRITE operations. This architecture eliminates the need for high-speed bus turnaround. Access to each port is accomplished using a common address bus. Addresses for reads and writes are latched on rising edges of the K and K# input clocks, respectively. Each address location is associated with two words that burst sequentially into or out of the device. Since data can be transferred into and out of the device on every rising edge of both clocks (K and K# and C and C#), memory bandwidth is maximized and system design is simplified by eliminating bus turnarounds. Marking1 -4 -5 -6 -7.5 MT54W2MH8B MT54W1MH18B MT54W512H36B F None NOTE: 1. A Part Marking Guide for the FBGA devices can be found on Micron’s Web site—http://www.micron.com/numberguide. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 Valid Part Numbers 1 ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Depth expansion is accomplished with port selects for each port (read R#, write W#) which are received at K rising edge. Port selects permit independent port operation. All synchronous inputs pass through registers controlled by the K or K# input clock rising edges. Active LOW byte writes (BWx#) permit byte or nibble write selection. Write data and byte writes are registered on the rising edges of both K and K#. The addressing within each burst of two is fixed and sequential, beginning with the lowest and ending with the highest address. All synchronous data outputs pass through output registers controlled by the rising edges of the output clocks (C and C# if provided, otherwise K and K#). Four balls are used to implement JTAG test capabilities: test mode select (TMS), test data-in (TDI), test clock (TCK), and test data-out (TDO). JTAG circuitry is used to serially shift data to and from the SRAM. JTAG inputs use JEDEC-standard 1.8V I/O levels to shift data during this testing mode of operation. The SRAM operates from a 1.8V power supply, and all inputs and outputs are HSTL-compatible. The device is ideally suited for applications that benefit from a high-speed, fully-utilized DDR data bus. Please refer to Micron’s Web site (www.micron.com/ sramds) for the latest data sheet. READ cycles are pipelined. The request is initiated by asserting R# LOW at K rising edge. Data is delivered after the next rising edge of the next K# (t + 1), using C and C# as the output timing references; or K and K#, if C and C# are tied HIGH. If C and C# are tied HIGH, they may not be toggled during device operation. Output tri-stating is automatically controlled such that the bus is released if no data is being delivered. This permits banked SRAM systems with no complex output enable (OE) timing generation. Back-to-back READ cycles are initiated every K rising edge. WRITE cycles are initiated by W# LOW at K rising edge. The addresses for the WRITE cycle is provided at the following K# rising edge. Data is expected at the rising edge of K and K#, beginning at the same K that initiated the cycle. Write registers are incorporated to facilitate pipelined, self-timed WRITE cycles and provide fully coherent data for all combinations of reads and writes. A read can immediately follow a write, even if they are to the same address. Although the write data has not been written to the memory array, the SRAM will deliver the data from the write register instead of using the older data from the memory array. The latest data is always utilized for all bus transactions. WRITE cycles can be initiated on every K rising edge. PARTIAL WRITE Operations BYTE WRITE operations are supported except for the x8 devices in which nibble write is supported. The active LOW byte write controls, BWx# (NW#), are registered coincident with their corresponding data. This feature can eliminate the need for some READ-MODIFY-WRITE cycles, collapsing it to a single BYTE/NIBBLE WRITE operation in some instances. READ/WRITE Operations All bus transactions operate on an uninterruptable burst of two data, requiring one full clock cycle of bus utilization. The resulting benefit is that short data transactions can remain in operation on both buses provided that the address rate can be maintained by the system (2x the clock frequency). 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Programmable Impedance Output Buffer automatically resets the DLL when the absence of input clock is detected. See Micron Technical Note TN54-02 for more information on clock DLL start-up procedures. The QDR SRAM is equipped with programmable impedance output buffers. This allows a user to match the driver impedance to the system. To adjust the impedance, an external precision resistor (RQ) is connected between the ZQ ball and VSS. The value of the resistor must be five times the desired impedance. For example, a 350W resistor is required for an output impedance of 70W . To ensure that output impedance is one-fifth the value of RQ (within 15 percent), the range of RQ is 175W to 350W . Alternately, the ZQ ball can be connected directly to VDDQ, which will place the device in a minimum impedance mode. Output impedance updates may be required because variations may occur in supply voltage and temperature over time. The device samples the value of RQ. Impedance updates are transparent to the system; they do not affect device operation, and all data sheet timing and current specifications are met during an update. The device will power up with an output impedance set at 50W . To guarantee optimum output driver impedance after power-up, the SRAM needs 1,024 cycles to update the impedance. The user can operate the part with fewer than 1,024 clock cycles, but optimal output impedance is not guaranteed. Single Clock Mode The SRAM can be used with the single K, K# clock pair by tying C and C# HIGH. In this mode the SRAM will use K and K# in place of C and C#. This mode provides the most rapid data output but does not compensate for system clock skew and flight times. The output echo clocks are precise references to output data. CQ and CQ# are both rising edge and falling edge accurate and are 180° out of phase. Either or both may be used for output data capture. K or C rising edge triggers CQ rising and CQ# falling edge. CQ rising edge indicates first data response for QDRI and DDRI (version 1, non-DLL) SRAM, while CQ# rising edge indicates first data response for QDRII and DDRII (version 2, DLL) SRAM. Depth Expansion Port select inputs are provided for the read and write ports. This allows for easy depth expansion. Both port selects are sampled on the rising edge of K only. Each port can be independently selected and deselected and does not affect the operation of the opposite port. All pending transactions are completed prior to a port deselecting. Depth expansion requires replicating R# and W# control signals for each bank if it is desired to have the bank independent of READ and WRITE operations. Clock Considerations This device utilizes internal delay-locked loops for maximum output data valid window. It can be placed into a stopped-clock state to minimize power with a modest restart time of 1,024 clock cycles. Circuitry 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Figure 2: Functional Block Diagram 2 Meg x 8; 1 Meg x 18; 512K x 36 n ADDRESS R# W# n ADDRESS REGISTRY & LOGIC K K# W# NWx# or BWx# a D (Data In) R# K K# DATA REGISTRY & LOGIC 2a K WR R E I G T E 2 WD R R I I T V E E R n 2 xa MEMORY ARRAY S E A NM S P E S RO E U G T P AU T 2a MUX 2a O U T P U T S E L E C T O U T P U T B U F F E R a Q (Data Out) 2 C C, C# or K, K# CQ, CQ# (Echo Clock Out) NOTE: 1. Figure 2 illustrates simplified device operation. See truth table, ball descriptions, and timing diagrams for detailed information. 2. For 2 Meg x 8, n = 20, a = 8; NWx# = 2 separate nibble writes. For 1 Meg x 18, n = 19, a = 18; BWx# = 2 separate byte writes. For 512K x 36, n = 18, a = 36; BWx# = 2 separate byte writes. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Figure 3: Application Example SRAM #1 Vt R D SA B R W W # # # ZQ Q C C# K K# DATA IN DATA OUT Address Read# BUS Write# MASTER BW# (CPU or ASIC) SRAM #4 R = 250Ω B R W W # # # D SA R R = 250Ω ZQ Q C C# K K# Vt Vt Source K Source K# Delayed K Delayed K# R R = 50Ω Vt = VREF/2 NOTE: 1. In this approach, the second clock pair drives the C and C# clocks but is delayed such that return data meets data setup and hold times at the bus master. 2. Consult Micron Technical Notes for more thorough discussions of clocking schemes. 3. Data capture is possible using only one of the two signals. CQ and CQ# clocks are optional use outputs. 4. For high frequency applications (200 MHz and faster) the CQ and CQ# clocks (for data capture) are recommended over the C and C# clocks (for data alignment). The C and C# clocks are optional use inputs. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Table 2: 2 Meg x 8 Ball Layout (Top View) 165-Ball FBGA 1 2 3 1 4 5 6 2 7 8 3 9 10 11 4 A CQ# VSS/SA SA W# NW1# K# NC/SA R# SA VSS/SA CQ B NC NC NC SA NC/SA5 K NW0#6 SA NC NC Q3 C NC NC NC VSS SA SA SA VSS NC NC D3 D NC D4 NC VSS VSS VSS VSS VSS NC NC NC E NC NC Q4 VDDQ VSS VSS VSS VDDQ NC D2 Q2 F NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC G NC D5 Q5 VDDQ VDD VSS VDD VDDQ NC NC NC H DLL# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC NC VDDQ VDD VSS VDD VDDQ NC Q1 D1 K NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC L NC Q6 D6 VDDQ VSS VSS VSS VDDQ NC NC Q0 M NC NC NC VSS VSS VSS VSS VSS NC NC D0 N NC D7 NC VSS SA SA SA VSS NC NC NC P NC NC Q7 SA SA C SA SA NC NC NC R TDO TCK SA SA SA C# SA SA SA TMS TDI NOTE: 1. Expansion address: 2A for 72Mb 2. NW1# controls writes to D4:D7 3. Expansion address: 7A for 144Mb 4. Expansion address: 10A for 36Mb 5. Expansion address: 5B for 288Mb 6. NW0# controls writes to D0:D3 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Table 3: 1 Meg x 18 Ball Layout (Top View) 165-Ball FBGA 1 2 3 1 4 2 5 6 3 7 8 4 9 10 11 5 A CQ# VSS/SA NC/SA W# BW1# K# NC/SA R# SA VSS/SA CQ B NC Q9 D9 SA NC K BW0#6 SA NC NC Q8 C NC NC D10 VSS SA SA SA VSS NC Q7 D8 D NC D11 Q10 VSS VSS VSS VSS VSS NC NC D7 E NC NC Q11 VDDQ VSS VSS VSS VDDQ NC D6 Q6 F NC Q12 D12 VDDQ VDD VSS VDD VDDQ NC NC Q5 G NC D13 Q13 VDDQ VDD VSS VDD VDDQ NC NC D5 H DLL# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 K NC NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 L NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS SA SA SA VSS NC NC D1 P NC NC Q17 SA SA C SA SA NC D0 Q0 R TDO TCK SA SA SA C# SA SA SA TMS TDI NOTE: 1. Expansion address: 2A for 144Mb 2. Expansion address: 3A for 36Mb 3. BW1# controls writes to D9:D17 4. Expansion address: 7A for 288Mb 5. Expansion address: 10A for 72Mb 6. BW0# controls writes to D0:D8 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Table 4: 512K x 36 Ball Layout (Top View) 165-Ball FBGA 1 2 3 1 4 2 5 6 3 7 8 4 9 10 5 11 6 A CQ# VSS/SA NC/SA W# BW2# K# BW1# R# NC/SA VSS/SA CQ B Q27 Q18 D18 SA BW3#7 K BW0#8 SA D17 Q17 Q8 C D27 Q28 D19 VSS SA SA SA VSS D16 Q7 D8 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 Q6 F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 Q5 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H DLL# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS SA SA SA VSS Q10 D9 D1 P Q35 D35 Q26 SA SA C SA SA Q9 D0 Q0 R TDO TCK SA SA SA C# SA SA SA TMS TDI NOTE: 1. Expansion address is 2A for 288Mb 2. Expansion address is 3A for 72Mb 3. BW2# controls writes to D18:D26 4. BW1# controls writes to D9:D17 5. Expansion address is 9A for 36Mb 6. Expansion address is 10A for 144Mb 7. BW3# controls writes to D27:D35 8. BW0# controls writes to D0:D8 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Table 5: Ball Descriptions SYMBOL TYPE DESCRIPTION BW_# NW_# Input C C# Input D_ Input DLL# Input K K# Input R# Input SA Input TCK Input TMS TDI VREF Input Input W# Input ZQ Input CQ#, CQ Output Q_ Output Synchronous Byte Writes (or Nibble Writes on x8): When LOW, these inputs cause their respective bytes to be registered and written if W# had initiated a WRITE cycle. These signals must meet setup and hold times around the rising edges of K and K# for each of the two rising edges comprising the WRITE cycle. See Ball Layout figures for signal to data relationships. Output Clock: This clock pair provides a user-controlled means of tuning device output data. The rising edge of C# is used as the output timing reference for first output data. The rising edge of C is used as the output reference for second output data. Ideally, C# is 180 degrees out of phase with C. C and C# may be tied HIGH to force the use of K and K# as the output reference clocks instead of having to provide C and C# clocks. If tied HIGH, these inputs may not be allowed to toggle during device operation. Synchronous Data Inputs: Input data must meet setup and hold times around the rising edges of K and K# during WRITE operations. See Ball Layout figures for ball site location of individual signals. The x8 device uses D0:D7. Remaining signals are NC. The x18 device uses D0:D17. Remaining signals are NC. The x36 device uses D0:D35. Remaining signals are NC. DLL Disable: When LOW, this input causes the DLL to be bypassed for stable, low-frequency operation. Input Clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data on the rising edge of K and the rising edge of K#. K# is ideally 180 degrees out of phase with K. All synchronous inputs must meet setup and hold times around the clock rising edges. Synchronous Read: When LOW, this input causes the address inputs to be registered and a READ cycle to be initiated. This input must meet setup and hold times around the rising edge of K and is ignored on the subsequent rising edge of K. Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the rising edge of K for READ cycles and must meet the setup and hold times around the rising edge of K# for WRITE cycles. See Ball Layout figures for address expansion inputs. All transactions operate on a burst of two words (one clock period of bus activity). These inputs are ignored when both ports are deselected. IEEE 1149.1 Clock Input: 1.8V I/O levels. This ball must be tied to VSS if the JTAG function is not used in the circuit. IEEE 1149.1 Test Inputs: 1.8V I/O levels. These balls may be left as No Connects if the JTAG function is not used in the circuit. HSTL Input Reference Voltage: Nominally VDDQ/2, but may be adjusted to improve system noise margin. Provides a reference voltage for the HSTL input buffer trip point. Synchronous Write: When LOW, this input causes the address inputs to be registered and a WRITE cycle to be initiated. This input must meet setup and hold times around the rising edge of K. Output Impedance Matching Input: This input is used to tune the device outputs to the system data bus impedance. DQ output impedance is set to 0.2 x RQ, where RQ is a resistor from this ball to ground. Alternately, this ball can be connected directly to VDDQ to enable the minimum impedance mode. This ball cannot be connected directly to GND or left unconnected. Synchronous Echo Clock Outputs: The edges of these outputs are tightly matched to the synchronous data outputs and can be used as data valid indication. These signals run freely and do not stop when Q tri-states. Synchronous Data Outputs: Output data is synchronized to the respective C and C# or to K and K# rising edges if C and C# are tied HIGH. This bus operates in response to R# commands. See Ball Layout figures for ball site location of individual signals. The x8 device uses Q0:Q7. Remaining signals are NC. The x18 device uses Q0:Q17. Remaining signals are NC. The x36 device uses Q0:Q35. Remaining signals are NC. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Table 5: Ball Descriptions (continued) SYMBOL TYPE DESCRIPTION TDO VDD Output Supply VDDQ Supply VSS NC Supply – IEEE 1149.1 Test Output: 1.8V I/0 level. Power Supply: 1.8V nominal. See DC Electrical Characteristics and Operating Conditions for range. Power Supply: Isolated Output Buffer Supply. Nominally, 1.5V. 1.8V is also permissible. See DC Electrical Characteristics and Operating Conditions for range. Power Supply: GND. No Connect: These balls are internally connected to the die, but have no function and may be left not connected to the board to minimize ball count. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Figure 4: Bus Cycle State Diagram RD RD LOAD NEW READ ADDRESS READ DOUBLE READ PORT NOP R_Init=0 always /RD /RD Supply voltage provided POWER-UP WT Supply voltage provided WT LOAD NEW WRITE ADDRESS AT K#↑ always WRITE PORT NOP WRITE DOUBLE AT K#↑ /WT /WT NOTE: 1. The address is concatenated with one additional internal LSB to facilitate BURST operation. The address order is always fixed as: xxx...xxx+0, xxx...xxx+1. Bus cycle is terminated at the end of this sequence (burst count = 2). 2. State transitions: RD = (R# = LOW); WT = (W# = LOW). 3. Read and write state machines can be simultaneously active. 4. State machine, control timing sequence is controlled by K. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM . Table 6: Truth Table Notes 1–6 OPERATION WRITE Cycle: Load address, input write data on consecutive K and K# rising edges READ Cycle: Load address, output data on consecutive C and C# rising edges NOP: No operation STANDBY: Clock stopped Table 7: K R# W# D OR Q D OR Q L®H X L L®H L X L®H H H Stopped X X DA(A0) at K(t)­ QA(A0) at C#(t)­ D=X Q = High-Z Previous State DA(A0 + 1) at K#(t + 1)­ QA(A0 + 1) at C(t + 1)­ D=X Q = High-Z Previous State BYTE WRITE Operation Notes 7, 8 OPERATION K K# L®H WRITE D0:17 at K rising edge WRITE D0:17 at K# rising edge WRITE D0:8 at K rising edge WRITE D0:8 at K# rising edge WRITE D9:17 at K rising edge WRITE D9:17 at K# rising edge WRITE nothing at K rising edge WRITE nothing at K# rising edge L®H L®H L®H L®H L®H L®H L®H BW0# BW1# 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 NOTE: 1. X means “Don’t Care.” H means logic HIGH. L means logic LOW. ­ means rising edge; ¯ means falling edge. 2. Data inputs are registered at K and K# rising edges. Data outputs are delivered at C and C# rising edges, except if C and C# are HIGH, then data outputs are delivered at K and K# rising edges. 3. R# and W# must meet setup and hold times around the rising edge (LOW to HIGH) of K and are registered at the rising edge of K. 4. This device contains circuitry that will ensure the outputs will be in High-Z during power-up. 5. Refer to state diagram and timing diagrams for clarification. 6. It is recommended that K = K# = C = C# when clock is stopped. This is not essential but permits most rapid restart by overcoming transmission line charging symmetrically. 7. Assumes a WRITE cycle was initiated. BW0# and BW1# can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. 8. This table illustrates operation for x18 devices. The x36 device operation is similar, except for the addition of BW2# (controls D18:D26) and BW3# (controls D27:D35). The x8 operation is similar, except that NW0# controls D0:D3, and NW1# controls D4:D7. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Absolute Maximum Ratings Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Maximum Junction Temperature depends upon package type, cycle time, loading, ambient temperature, and airflow. Voltage on VDD Supply Relative to VSS ..... -0.5V to +2.8V Voltage on VDDQ Supply Relative to VSS ....................................... -0.5V to +VDD VIN ..................................................... -0.5V to VDD + 0.5V Storage Temperature ..............................-55ºC to +125ºC Junction Temperature .......................................... +125ºC Short Circuit Output Current .............................. ±70mA Table 8: DC Electrical Characteristics and Operating Conditions Notes appear following parameter tables on page 16; 0°C £ TA £ +70°C; VDD = 1.8V ±0.1V unless otherwise noted DESCRIPTION CONDITIONS Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Clock Input Signal Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage SYMBOL MIN MAX UNITS NOTES VREF + 0.1 -0.3 -0.3 -5 -5 VDDQ + 0.3 VREF - 0.1 VDDQ + 0.3 5 5 V V V µA µA 3, 4 3, 4 3, 4 0V £ VIN £ VDDQ Output(s) disabled, 0V £ VIN £ VDDQ (Q) |IOH| £ 0.1mA Note 1 VIH(DC) VIL(DC) VIN ILI ILO VOH (LOW) VOH VDDQ - 0.2 VDDQ/2 - 0.12 VDDQ VDDQ/2 + 0.12 V V 3, 5, 6 3, 5, 6 IOL £ 0.1mA Note 2 VOL (LOW) VOL VSS VDDQ/2 - 0.12 0.2 VDDQ/2 + 0.12 V V 3, 5, 6 3, 5, 6 VDD VDDQ VREF 1.7 1.4 0.68 1.9 VDD 0.95 V V V 3 3, 7 3 Supply Voltage Isolated Output Buffer Supply Reference Voltage Table 9: AC Electrical Characteristics and Operating Conditions Notes appear following parameter tables on page 16; 0°C £ TA £ +70°C; VDD = 1.8V ±0.1V unless otherwise noted DESCRIPTION SYMBOL MIN MAX UNITS NOTES Input High (Logic 1) Voltage VIH(AC) VREF + 0.2 – V 3, 4, 8 Input Low (Logic 0) Voltage VIL(AC) – VREF - 0.2 V 3, 4, 8 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 CONDITIONS 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM . Table 10: IDD Operating Conditions and Maximum Limits Notes appear following parameter tables on page 16; 0°C £ TA £ +70°C; VDD = 1.8V ±0.1V unless otherwise noted MAX DESCRIPTION Operating Supply Current: DDR CONDITIONS SYM TYP IDD x8, x18 x36 ISB1 x8, x18 x36 TBD -4 -5 -6 -7.5 600 800 330 445 280 380 235 310 200 210 170 180 150 160 125 135 32 71 142 25 57 113 21 47 95 17 38 76 UNITS NOTES mA 9, 10 mA 10, 11 mA 12 All inputs £ VIL or ³ VIH; Cycle time ³ tKHKH (MIN); Outputs open; 100% bus utilization; 50% address and data bits toggling on each clock cycle Standby Supply Current: NOP t KHKH = tKHKH (MIN); Device in NOP state; All addresses/data static Output Supply Current: DDR (Information only) CL = 15pF IDDQ x8 x18 x36 TBD TBD Table 11: Capacitance Note 13; notes appear following parameter tables on page 16 DESCRIPTION Address/Control Input Capacitance Output Capacitance (Q) Clock Capacitance CONDITIONS SYMBOL TYP MAX UNITS TA = 25ºC; f = 1 MHz CI CO CCK 4.5 6 5.5 5.5 7 6.5 pF pF pF Table 12: Thermal Resistance Note 13; notes appear following parameter tables on page 16 DESCRIPTION Junction to Ambient (Airflow of 1m/s) Junction to Case (Top) CONDITIONS Soldered on a 4.25 x 1.125 inch, 4-layer printed circuit board Junction to Balls (Bottom) 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 14 SYMBOL TYP UNITS NOTES qJA 19.4 ºC/W 14 qJC 1.0 ºC/W qJB 9.6 ºC/W 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Table 13: AC Electrical Characteristics And Recommended Operating Conditions Notes 16–19, 22, notes appear following paramater tables on page 16; 0°C £ TA £ +70°C; TJ £ +95°C; VDD = 1.8V ±0.1V -4 DESCRIPTION Clock Clock cycle time (K, K#, C, C#) Clock phase jitter (K, K#, C, C#) Clock HIGH time (K, K#, C, C#) Clock LOW time (K, K#, C, C#) Clock to clock# (K®K#­, C®C#­) at tKHKH minimum Clock# to clock (K#®K, C#®C) at tKHKH minimum Clock to data clock (K®C­, K#­®C#­) DLL lock time (K, C) t KHKH t -6 -7.5 UNITS NOTES 8.40 ns 20 0.20 ns 21 MIN MAX MIN MAX MIN MAX MIN MAX 4.00 5.25 5.00 6.30 6.00 7.88 7.50 0.20 KC var 0.20 0.20 t 1.60 2.00 2.40 3.00 ns t KLKH 1.60 2.00 2.40 3.00 ns t KHK#H 1.80 2.20 2.70 3.38 ns t K#HKH 1.80 2.20 2.70 3.38 ns t KHCH 0.00 KC lock 1,024 1,024 1,024 1,024 cycles 30 30 30 30 ns KHKL t t K static to DLL reset KC reset Output Times C, C# HIGH to output valid C, C# HIGH to output hold C, C# HIGH to echo clock valid C, C# HIGH to echo clock hold CQ, CQ# HIGH to output valid CQ, CQ# HIGH to output hold C HIGH to output High-Z CHQV CHQX t CHCQV t CHCQX t CQHQV t CQHQX C HIGH to output Low-Z t Setup Times Address valid to K rising edge -5 SYMBOL t t 1.80 0.00 0.45 -0.45 0.45 -0.30 0.50 0.50 0.35 0.50 -0.50 0.40 -0.40 0.45 3.55 -0.50 -0.50 -0.35 0.00 0.50 0.45 0.45 2.80 -0.50 -0.45 0.30 CHQZ 0.00 0.45 -0.45 -0.45 t 2.30 0.40 -0.40 0.50 0.50 ns ns ns ns ns ns ns 22 23 23 ns CHQX1 -0.45 -0.45 -0.50 -0.50 ns t AVKH 0.35 0.40 0.50 0.50 ns 16 t IVKH 0.35 0.40 0.50 0.50 ns 16 DVKH Control inputs valid to K rising edge Data-in valid to K, K# rising edge t 0.35 0.40 0.50 0.50 ns 16 Hold Times K rising edge to address hold t KHAX 0.35 0.40 0.50 0.50 ns 16 t KHIX 0.35 0.40 0.50 0.50 ns 16 KHDX 0.35 0.40 0.50 0.50 ns 16 K rising edge to control inputs hold K, K# rising edge to data-in hold 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 t 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Notes 1. Outputs are impedance-controlled. |IOH| = (VDDQ/2)/(RQ/5) for values of 175W £ RQ £ 350W . 2. Outputs are impedance-controlled. IOL = (VDDQ/ 2)/(RQ/5) for values of 175W £ RQ £ 350W . 3. All voltages referenced to VSS (GND). 4. Overshoot: VIH(AC) £ VDD + 0.7V for t £ tKHKH/2 Undershoot: VIL(AC) ³ -0.5V for t £ tKHKH/2 Power-up: VIH £ VDDQ + 0.3V and VDD £ 1.7V and VDDQ £ 1.4V for t £ 200ms During normal operation, VDDQ must not exceed VDD. R# and W# signals may not have pulse widths less than tKHKL (MIN) or operate at cycle rates less than tKHKH (MIN). 5. AC load current is higher than the shown DC values. AC I/O curves are available upon request. 6. HSTL outputs meet JEDEC HSTL Class I and Class II standards. 7. The nominal value of VDDQ may be set within the range of 1.5V to 1.8V DC, and the variation of VDDQ must be limited to ±0.1V DC. 8. To maintain a valid level, the transitioning edge of the input must: a. Sustain a constant slew rate from the current AC level through the target AC level, VIL(AC) or VIH(AC). b. Reach at least the target AC level. c. After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or VIH(DC). 9. IDD is specified with no output current. IDD is linear with frequency. Typical value is measured at 6ns cycle time. 10. Typical values are measured at VDD = 1.8V, VDDQ = 1.5V, and temperature = 25°C. 11. NOP currents are valid when entering NOP after all pending READ and WRITE cycles are completed. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 12. Average I/O current and power is provided for informational purposes only and is not tested. Calculation assumes that all outputs are loaded with CL (in farads), f = input clock frequency, half of outputs toggle at each transition (n = 18 for the x36), CO = 6pF, VDDQ = 1.5V and uses the equations: Average I/O Power as dissipated by the SRAM is: P = 0.5 × n × f × VDDQ2 x (CL + 2CO). Average IDDQ = n × f × VDDQ x (CL + CO). 13. This parameter is sampled. 14. Average thermal resistance between the die and the case top surface per MIL SPEC 883 Method 1012.1. 15. Junction temperature is a function of total device power dissipation and device mounting environment. Measured per SEMI G38-87. 16. This is a synchronous device. All addresses, data, and control lines must meet the specified setup and hold times for all latching clock edges. 17. Test conditions as specified with the output loading as shown in Figure 5 unless otherwise noted. 18. Control input signals may not be operated with pulse widths less than tKHKL (MIN). 19. If C and C# are tied HIGH, then K and K# become the references for C and C# timing parameters. 20. The device will operate at clock frequencies slower than tKHKH (MAX). See Micron Technical Note TN-54-02 for more information. 21. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. 22. VDD slew rate must be less than 0.1V DC per 50ns for DLL lock retention. DLL lock time begins once VDD and input clock are stable. 23. Echo clock is tightly controlled to data valid/data hold. By design, there is a ±0.1ns variation from echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations. 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM AC Test Conditions Figure 5: Output Load Equivalent Input pulse levels . . . . . . . . . . . . . . . . . . 0.25V to 1.25V Input rise and fall times . . . . . . . . . . . . . . . . . . . . 0.7ns Input timing reference levels . . . . . . . . . . . . . . . . 0.75V Output reference levels . . . . . . . . . . . . . . . . . . .VDDQ/2 ZQ for 50W impedance . . . . . . . . . . . . . . . . . . . . . 250W Output load . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 5 VDDQ/2 0.75V VREF 50Ω SRAM Z O = 50Ω 250Ω ZQ 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Figure 6: READ/WRITE Timing READ WRITE 1 2 READ WRITE 3 READ 4 WRITE 6 5 NOP WRITE (Note 2) 7 NOP 8 9 10 Q40 Q41 K tKHKL tKLKH tKHK#H tKHKH K# R# tIVKH tKHIX W# (Note 3) A A0 A1 A3 A4 A5 D31 D50 D51 A2 A6 tAVKH tKHAX tAVKH tKHAX D D10 D11 D30 tDVKH D60 tDVKH tKHDX D61 tKHDX (Note 1) Q tCHQX1 tKHCH C tKLKH Q00 Q01 tCHQX tCHQX Q20 Q21 tCHQZ tCQHQV tCHQV tCHQV tKHKL tKHCH tKHK#H t KHKH C# tCHCQV tCHCQX CQ tCHCQV tCHCQX CQ# DON’T CARE UNDEFINED NOTE: 1. Q00 refers to output from address A0 + 1. Q01 refers to output from the next internal burst address following A0, i.e., A0 + 1. 2. Outputs are disabled (High-Z) one clock cycle after a NOP. 3. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. (This note applies to whole diagram.) 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 18 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM IEEE 1149.1 Serial Boundary Scan (JTAG) Test Access Port (TAP) Test Clock (TCK) The SRAM incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM. Note that the TAP controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully-compliant TAPs. The TAP operates using JEDEC-standard 1.8V I/O logic levels. The SRAM contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test MODE SELECT (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this ball unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI ball is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see Figure 7. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register, as illustrated in Figure 8. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. Alternately, they may be connected to VDD through a pull-up resistor. TDO should be left unconnected. Upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. Test Data-Out (TDO) The TDO output ball is used to serially clock dataout from the registers. The output is active depending upon the current state of the TAP state machine, as shown in Figure 7. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register, as depicted in Figure 8. Figure 7: TAP Controller State Diagram 1 TEST-LOGIC RESET 0 RUN-TEST/ IDLE 0 1 SELECT DR-SCAN 1 SELECT IR-SCAN 0 1 1 CAPTURE-DR A reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a High-Z state. CAPTURE-IR 0 0 0 SHIFT-IR 1 0 1 EXIT1-DR 1 EXIT1-IR 0 1 0 PAUSE-DR 0 PAUSE-IR 1 TAP Registers 0 Registers are connected between the TDI and TDO balls and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. 1 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-DR 1 Performing a TAP RESET 0 SHIFT-DR 0 1 0 UPDATE-IR 1 0 NOTE: The 0/1 next to each state represents the value of TMS at the rising edge of TCK. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 19 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Instruction Register Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can be used to capture the contents of the I/O ring. The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the balls on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls, as shown in Figure 8. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state, as described in the previous section. When the TAP controller is in the Capture-IR state, the two LSBs are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Identification (ID) Register The ID register is loaded with a vendor-specific, 32bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the ShiftDR state. The ID register has a vendor code and other information described in the Identification Register Definitions table. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (Vss) when the BYPASS instruction is executed. TAP Instruction Set Overview Eight different instructions are possible with the three-bit instruction register. All combinations are listed in the Instruction Codes table. Three of these instructions are listed as RESERVED and should not be used. The other five instructions are described in detail below. The TAP controller used in this SRAM is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. The TAP controller cannot be used to load address, data or control signals into the SRAM and cannot preload the I/O buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/PRELOAD; rather, it performs a capture of the I/O ring when these instructions are executed. Figure 8: TAP Controller Block Diagram 0 Bypass Register 2 1 0 TDI Selection Circuitry Instruction Register 31 30 29 . . Selection Circuitry TDO . 2 1 0 Identification Register x . . . . . 2 1 0 Boundary Scan Register TCK TMS TAP CONTROLLER EXTEST NOTE: EXTEST is a mandatory 1149.1 instruction which is to be executed whenever the instruction register is loaded with all 0s. EXTEST is not implemented in this SRAM TAP controller; therefore, this device is not 1149.1-compliant. The TAP controller does recognize an all-0 instruction. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE/PRELOAD instruction has been loaded. EXTEST does not place the SRAM outputs (including CQ and CQ#) in a High-Z state. X = 106. Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the SRAM. The SRAM has a 107-bit-long register. The boundary scan register is loaded with the contents of the RAM I/O ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 20 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM IDCODE Note that since the PRELOAD part of the command is not implemented, putting the TAP into the UpdateDR state while performing a SAMPLE/PRELOAD instruction will have the same effect as the Pause-DR command. The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO balls when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a High-Z state. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not implemented, so the device TAP controller is not fully 1149.1-compliant. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 21 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Figure 9: TAP Timing 1 2 Test Clock (TCK) 3 tTHTL tMVTH tTHMX tDVTH tTHDX t TLTH 4 5 6 tTHTH Test Mode Select (TMS) Test Data-In (TDI) tTLOV tTLOX Test Data-Out (TDO) DON’T CARE UNDEFINED NOTE: Timing for SRAM inputs and outputs is congruent with TDI and TDO, respectively, as shown in Figure 9. Table 14: TAP DC Electrical Characteristics Notes 1, 2; 0°C £ TA £ +70°C; VDD = 1.8V ±0.1V DESCRIPTION SYMBOL Clock Clock cycle time t THTH MIN 100 TF UNITS ns 10 f Clock frequency MAX MHz Clock HIGH time t 40 ns Clock LOW time t TLTH 40 ns Output Times TCK LOW to TDO unknown t TLOX 0 ns TCK LOW to TDO valid t TDI valid to TCK HIGH t TCK HIGH to TDI invalid t Setup Times TMS setup t THTL 20 TLOV DVTH 10 ns THDX 10 ns MVTH 10 ns CS 10 ns THMX 10 ns 10 ns Capture setup t Hold Times TMS hold t t Capture hold ns CH NOTE: 1. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 2. Test conditions are specified using the load in Figure 10. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 22 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM TAP AC Test Conditions Figure 10: TAP AC Output Load Equivalent Input pulse levels . . . . . . . . . . . . . . . . . . . . . VSS to 1.8V Input rise and fall times . . . . . . . . . . . . . . . . . . . . . . 1ns Input timing reference levels . . . . . . . . . . . . . . . . . 0.9V Output reference levels . . . . . . . . . . . . . . . . . . . . . . 0.9V Test load termination supply voltage . . . . . . . . . . 0.9V 0.9V 50Ω TDO Z O= 50Ω 20pF Table 15: TAP DC Electrical Characteristics and Operating Conditions Note 2; 0°C £ TA £ +70°C; VDD = 1.8V ±0.1V unless otherwise noted DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output Low Voltage Output Low Voltage Output High Voltage Output High Voltage CONDITIONS 0V £ VIN £ VDD Output(s) disabled, 0V £ VIN £ VDD (DQx) IOLC = 100µA IOLT = 2mA IOHC = -100µA IOHT = -2mA SYMBOL MIN MAX UNITS NOTES VIH VIL ILI ILO 1.3 -0.3 -5.0 -5.0 VDD + 0.3 0.5 5.0 5.0 V V µA µA 1, 2 1, 2 2 2 0.2 0.4 V V V V 1, 2 1, 2 1, 2 1, 2 VOL1 VOL2 VOH1 VOH1 1.6 1.4 NOTE: 1. All voltages referenced to VSS (GND). 2. This table defines DC values for TAP control and data balls only. The DQ SRAM balls used in JTAG operation will have the DC values as defined in Table 8, “DC Electrical Characteristics and Operating Conditions,” on page 13. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 23 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Table 16: Identification Register Definitions INSTRUCTION FIELD ALL DEVICES REVISION NUMBER (31:28) DEVICE ID (28:12) MICRON JEDEC ID CODE (11:1) ID Register Presence Indicator (0) 000 00def0wx0t0q0b0s0 00000101100 1 DESCRIPTION Revision number. def = 010 for 36Mb density def = 001 for 18Mb density wx = 11 for x36 width wx = 10 for x18 width wx = 01 for x8 width t = 1 for DLL version t = 0 for non-DLL version q = 1 for QDR q = 0 for DDR b = 1 for 4-word burst b = 0 for 2-word burst s = 1 for separate I/O s = 0 for common I/O Allows unique identification of SRAM vendor. Indicates the presence of an ID register. Table 17: Scan Register Sizes REGISTER NAME BIT SIZE 3 1 32 107 Instruction Bypass ID Boundary Scan Table 18: Instruction Codes INSTRUCTION CODE EXTEST 000 IDCODE 001 SAMPLE Z 010 RESERVED SAMPLE/ PRELOAD 011 100 RESERVED RESERVED BYPASS 101 110 111 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 DESCRIPTION Captures I/O ring contents. Places the boundary scan register between TDI and TDO. This instruction is not 1149.1-compliant. Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. Do Not Use: This instruction is reserved for future use. Captures I/O ring contents. Places the boundary scan register between TDI and TDO. This instruction does not implement 1149.1 preload function and is therefore not 1149.1compliant. Do Not Use: This instruction is reserved for future use. Do Not Use: This instruction is reserved for future use. Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. 24 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Table 19: Boundary Scan (Exit) Order BIT# FBGA BALL BIT# FBGA BALL BIT# FBGA BALL 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 6R 6P 6N 7P 7N 7R 8R 8P 9R 11P 10P 10N 9P 10M 11N 9M 9N 11L 11M 9L 10L 11K 10K 9J 9K 10J 11J 11H 10G 9G 11F 11G 9F 10F 11E 10E 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 10D 9E 10C 11D 9C 9D 11B 11C 9B 10B 11A 10A 9A 8B 7C 6C 8A 7A 7B 6B 6A 5B 5A 4A 5C 4B 3A 2A 1A 2B 3B 1C 1B 3D 3C 1D 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 2C 3E 2D 2E 1E 2F 3F 1G 1F 3G 2G 1J 2J 3K 3J 2K 1K 2L 3L 1M 1L 3N 3M 1N 2M 3P 2N 2P 1P 3R 4R 4P 5P 5N 5R 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 25 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Figure 11: 165-Ball FBGA 0.85 ±0.075 0.12 C SEATING PLANE C BALL A11 165X Ø 0.45 SOLDER BALL DIAMETER REFERS TO POST REFLOW CONDITION. THE PRE-REFLOW DIAMETER IS Ø 0.40 10.00 BALL A1 PIN A1 ID 1.00 TYP 1.20 MAX PIN A1 ID 7.50 ±0.05 14.00 15.00 ±0.10 7.00 ±0.05 1.00 TYP MOLD COMPOUND: EPOXY NOVOLAC 6.50 ±0.05 SUBSTRATE: PLASTIC LAMINATE 5.00 ±0.05 SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb SOLDER BALL PAD: Ø .33mm 13.00 ±0.10 NOTE: All dimensions are in millimeters. Data Sheet Designation No Marking: This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range for production devices. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. ® 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks and/or service marks of of Micron Technology, Inc. 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 26 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, QDRIIb2 SRAM Document Revision History Rev. H, Pub 3/03 ..............................................................................................................................................................3/03 • Updated JTAG Section • Removed Preliminary Status Rev. G, Pub 2/03...............................................................................................................................................................2/03 • Added definitive notes to Figure 3 • Added definitive note to Table 9 • Added definitive note concerning bit# 64 to Table 19 • Removed Errata specifications • Updated AC timing values with new codevelopment values • Updated JTAG description to reflect 1149.1 specification compliance with EXTEST feature • Added definitive note concerning SRAM (DQ) I/O balls used for JTAG DC values and timing • Changed process information in header to die revision indicator • Updated Thermal Resistance Values to Table 12: CI = 4.5 TYP; 5.5 MAX CO = 6 TYP; 7 MAX CCK = 5.5 TYP; 6.5 MAX • Updated Thermal Resistance values to Table 12: JA = 19.4 TYP JC = 1.0 TYP JB = 9.6 TYP • Added TJ £ +95°C to Table 13 • • • • • • Modified Figure 2 regarding depth, configuration, and byte controls Added definitive notes regarding I/O behavior during JTAG operation Added definitive notes regarding IDD test conditions for read to write ratio Removed note regarding AC derating information for full I/O range Remove references to JTAG scan chain logic levels being at logic zero for NC pins in Tables 5 and 19 Revised ball description for NC balls: These balls are internally connected to the die, but have no function and may be left not connected to the board to minimize ball count. Rev. 6, Pub 9/02 ...............................................................................................................................................................9/02 • Reverted data sheet to PRELIMINARY designation Rev. 5, Pub. 9/02, ADVANCE ...........................................................................................................................................9/02 • Added new Output Times values • Added Errata to back of data sheet • Removed ADVANCE designation • Removed TJ references Rev. 4, Pub. 8/02, ADVANCE ...........................................................................................................................................8/02 • Updated format Rev. 3, Pub. 12/01, ADVANCE .......................................................................................................................................12/01 • Changed AC timing Rev. 2, Pub. 11/01, ADVANCE .......................................................................................................................................11/01 • New ADVANCE data sheet 18Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM MT54W1MH18B_H.fm – Rev. H, Pub. 3/03 27 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc.