8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
MT55L512L18F, MT55L512V18F,
MT55L256L32F, MT55L256V32F,
MT55L256L36F, MT55L256V36F
8Mb
ZBT® SRAM
3.3V VDD, 3.3V or 2.5V I/O
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
100-Pin TQFP1
High frequency and 100 percent bus utilization
Fast cycle times: 10ns, 11ns and 12ns
Single +3.3V ±5% power supply (VDD)
Separate +3.3V or +2.5V isolated output buffer
supply (VDDQ)
Advanced control logic for minimum control
signal interface
Individual BYTE WRITE controls may be tied LOW
Single R/W# (read/write) control pin
CKE# pin to enable clock and suspend operations
Three chip enables for simple depth expansion
Clock-controlled and registered addresses, data
I/Os and control signals
Internally self-timed, fully coherent WRITE
Internally self-timed, registered outputs to
eliminate the need to control OE#
SNOOZE MODE for reduced-power standby
Common data inputs and data outputs
Linear or Interleaved Burst Modes
Burst feature (optional)
Pin/function compatibility with 2Mb, 4Mb, and
18Mb ZBT SRAM
100-pin TQFP
165-pin FBGA
Automatic power-down
OPTIONS
165-Pin FBGA
NOTE: 1. JEDEC-standard MS-026 BHA (LQFP).
MARKING
• Timing (Access/Cycle/MHz)
7.5ns/10ns/100 MHz
8.5ns/11ns/90 MHz
9ns/12ns/83 MHz
• Configurations
3.3V I/O
512K x 18
256K x 32
256K x 36
2.5V I/O
512K x 18
256K x 32
256K x 36
• Package
100-pin TQFP
165-pin FBGA
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Industrial (-40°C to +85°C)**
-10
-11
-12
* A Part Marking Guide for the FBGA devices can be found on Micron’s
Web site—http://www.micron.com/support/index.html.
** Industrial temperature range offered in specific speed grades and
configurations. Contact factory for more information.
GENERAL DESCRIPTION
MT55L512L18F
MT55L256L32F
MT55L256L36F
The Micron® Zero Bus Turnaround™ (ZBT®) SRAM
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
Micron’s 8Mb ZBT SRAMs integrate a 512K x 18,
256K x 32, or 256K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. These SRAMs are optimized for 100 percent
bus utilization, eliminating any turnaround cycles for
READ to WRITE, or WRITE to READ, transitions. All
synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input (CLK).
The synchronous inputs include all addresses, all data
inputs, chip enable (CE#), two additional chip enables
for easy depth expansion (CE2, CE2#), cycle start input
MT55L512V18F
MT55L256V32F
MT55L256V36F
T
F*
None
IT
Part Number Example:
MT55L256L32FT-11
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FUNCTIONAL BLOCK DIAGRAM
512K x 18
19
SA0, SA1, SA
ADDRESS
REGISTER
17
19
SA1
D1
SA0
D0
MODE
CLK
CKE#
K
CE
ADV/LD#
K
BURST
LOGIC
19
Q1 SA1'
SA0'
Q0
19
WRITE ADDRESS
REGISTER
19
ADV/LD#
512K x 9 x 2
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
BWa#
WRITE
DRIVERS
18
18
BWb#
MEMORY
ARRAY
18
R/W#
D
A
T
A
18
A
M
P
S
S
T
E
E
R
I
N
G
18
B
U
F
F
E
R
S
18
DQs
E
INPUT
E
REGISTER
18
OE#
CE#
CE2
CE2#
S
E
N
S
E
O
U
T
P
U
T
READ LOGIC
FUNCTIONAL BLOCK DIAGRAM
256K x 32/36
18
SA0, SA1, SA
ADDRESS
REGISTER
SA1
D1
SA0
D0
MODE
CLK
CKE#
K
CE
16
18
ADV/LD#
K
BURST
LOGIC
18
Q1 SA1'
SA0'
Q0
18
WRITE ADDRESS
REGISTER
18
256K x 8 x 4
(x32)
ADV/LD#
BWa#
BWb#
BWc#
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
36
WRITE
DRIVERS
36
256K x 9 x 4 36
(x36)
MEMORY
ARRAY
BWd#
S
E
N
S
E
A
M
P
S
R/W#
36
OE#
CE#
CE2
CE2#
O
U
T
P
U
T
D
A
T
A
36
S
T
E
E
R
I
N
G
36
B
U
F
F
E
R
S
36
DQs
DQPa
DQPb
DQPc
DQPd
E
INPUT
E
REGISTER
READ LOGIC
NOTE: Functional block diagrams illustrate simplified device operation. See truth table, pin descriptions, and timing diagrams
for detailed information.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
GENERAL DESCRIPTION (continued)
cycle. For example, if a WRITE cycle begins in clock cycle
one, the address is present on rising edge one. BYTE
WRITEs need to be asserted on the same cycle as the
address. The write data associated with the address is
required one cycle later, or on the rising edge of clock
cycle two.
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes to
be written. During a BYTE WRITE cycle, BWa# controls
DQa pins; BWb# controls DQb pins; BWc# controls
DQc pins; and BWd# controls DQd pins. Cycle types
can only be defined when an address is loaded, i.e.,
when ADV/LD# is LOW. Parity/ECC bits are available
only on the x18 and x36 versions.
Micron’s 8Mb ZBT SRAMs operate from a +3.3V VDD
power supply, and all inputs and outputs are LVTTLcompatible. Users can choose either a 3.3V or 2.5V I/O
version. The device is ideally suited for systems requiring high bandwidth and zero bus turnaround delays.
Please refer to the Micron Web site
(www.micron.com/sramds) for the latest data sheet.
(ADV/LD#), synchronous clock enable (CKE#), byte
write enables (BWa#, BWb#, BWc#, and BWd#), and
read/write (R/W#).
Asynchronous inputs include the output enable
(OE#, which may be tied LOW for control signal minimization), clock (CLK), and snooze enable (ZZ, which
may be tied LOW if unused). There is also a burst mode
pin (MODE) that selects between interleaved and linear
burst modes. MODE may be tied HIGH, LOW, or left
unconnected if burst is unused. The flow-through dataout (Q) is enabled by OE#. WRITE cycles can be from
one to four bytes wide as controlled by the write control
inputs.
All READ, WRITE, and DESELECT cycles are initiated by the ADV/LD# input. Subsequent burst addresses can be internally generated as controlled by the
burst advance pin (ADV/LD#). Use of burst mode is
optional. It is allowable to give an address for each
individual READ and WRITE cycle. BURST cycles wrap
around after the fourth access from a base address.
To allow for continuous, 100 percent use of the data
bus, the flow-through ZBT SRAM uses a LATE WRITE
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
TQFP PIN ASSIGNMENT TABLE
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
x18
NC
NC
NC
NC
NC
DQb
DQb
DQb
DQb
DQb
DQb
DQb
DQb
DQb
NC
x32
NF
DQc
DQc
VDDQ
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
DQc
DQc
VSS1
VDD
VDD2
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
x36
DQPc
DQc
DQc
DQc
DQc
DQc
DQc
DQc
DQc
DQd
DQd
DQd
DQd
DQd
DQd
PIN #
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
x18
x32
x36
VSS
VDDQ
NC
DQd DQd
NC
DQd DQd
NC
NF
DQPd
MODE (LBO#)
SA
SA
SA
SA
SA1
SA0
DNU
DNU
VSS
VDD
DNU
DNU
SA
SA
SA
SA
SA
SA
SA
PIN #
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
x18
NC
NC
NC
NC
NC
DQa
DQa
DQa
DQa
DQa
NC
x32
x36
NF
DQPa
DQa
DQa
DQa
DQa
VDDQ
VSS
DQa DQa
DQa DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
ZZ
VDD
VSS
VSS
DQb DQb
DQb DQb
VDDQ
VSS
DQb DQb
DQb DQb
DQb DQb
DQb DQb
PIN #
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
x18
NC
NC
SA
NC
NC
x32
x36
VSS
VDDQ
DQb DQb
DQb DQb
NF
DQPb
SA
SA
SA
NF3
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
VSS
VDD
CE2#
BWa#
BWb#
BWc# BWc#
BWd# BWd#
CE2
CE#
SA
SA
NOTE: 1. Pins 14 and 66 do not have to be connected directly to VSS if the input voltage is ≤ VIL.
2. Pins 16 does not have to be connected directly to VDD if the input voltage is ≥ VIH.
3. Pin 84 is reserved for address expansion to 18Mb device.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
SA
NC
NC
VDDQ
VSS
NC
DQPa
DQa
DQa
VSS
VDDQ
DQa
DQa
VSS
VSS1
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
NC
NC
VSS
VDDQ
NC
NC
NC
PIN ASSIGNMENT (TOP VIEW)
100-PIN TQFP
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
x18
SA
SA
SA
SA
SA
SA
SA
DNU
DNU
VDD
VSS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
NF/DQPb4
DQb
DQb
VDDQ
VSS
DQb
DQb
DQb
DQb
VSS
VDDQ
DQb
DQb
VSS
VSS1
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
NF/DQPa4
NC
NC
NC
VDDQ
VSS
NC
NC
DQb
DQb
VSS
VDDQ
DQb
DQb
VSS1
VDD
VDD2
VSS
DQb
DQb
VDDQ
VSS
DQb
DQb
DQPb
NC
VSS
VDDQ
NC
NC
NC
SA
SA
SA
NF3
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
VSS
VDD
CE2#
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
x32/x36
SA
SA
SA
SA
SA
SA
SA
DNU
DNU
VDD
VSS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
NF/DQPc4
DQc
DQc
VDDQ
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
DQc
DQc
VSS1
VDD
VDD2
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
VSS
VDDQ
DQd
DQd
NF/DQPd4
SA
SA
SA
NF3
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
VSS
VDD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
NOTE: 1.
2.
3.
4.
Pins 14 and 66 do not have to be connected directly to VSS if the input voltage is ≤ VIL.
Pins 16 does not have to be connected directly to VDD if the input voltage is ≥ VIH.
Pin 84 is reserved for address expansion to 18Mb device.
NF for x32 version, DQPx for x36 version.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
TQFP PIN DESCRIPTIONS
x18
37
36
32-35, 44-50,
80-83, 99,
100
x32/x36
37
36
32-35, 44-50,
81-83, 99,
100
93
94
–
–
93
94
95
96
BWa#
BWb#
BWc#
BWd#
Input
89
89
CLK
Input
98
98
CE#
Input
92
92
CE2#
Input
97
97
CE2
Input
86
86
OE#
(G#)
Input
85
85
87
87
CKE#
Input
64
64
ZZ
Input
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
SYMBOL TYPE
SA0
Input
SA1
SA
ADV/LD# Input
DESCRIPTION
Synchronous Address Inputs: These inputs are registered
and must meet the setup and hold times around the rising
edge of CLK. Pin 84 is reserved as an address bit for the
higher-density 18Mb ZBT SRAM. SA0 and SA1 are the two
least significant bits (LSB) of the address field and set the
internal burst counter if burst is desired.
Synchronous Byte Write Enables: These active LOW
inputs allow individual bytes to be written when a WRITE
cycle is active and must meet the setup and hold times
around the rising edge of CLK. BYTE WRITEs need to be
asserted on the same cycle as the address. BWa# controls
DQa pins; BWb# controls DQb pins; BWc# controls DQc
pins; BWd# controls DQd pins.
Clock: This signal registers the address, data, chip enables,
byte write enables and burst control inputs on its rising
edge. All synchronous inputs must meet setup and hold
times around the clock’s rising edge.
Synchronous Chip Enable: This active LOW input is used to
enable the device and is sampled only when a new
external address is loaded (ADV/LD# is LOW).
Synchronous Chip Enable: This active LOW input is used to
enable the device and is sampled only when a new
external address is loaded (ADV/LD# is LOW). This
input can be used for memory depth expansion.
Synchronous Chip Enable: This active HIGH input is used to
enable the device and is sampled only when a new
external address is loaded (ADV/LD# is LOW). This
input can be used for memory depth expansion.
Output Enable: This active LOW, asynchronous input
enables the data I/O output drivers. G# is the JEDECstandard term for OE#.
Synchronous Address Advance/Load: When HIGH, this
input is used to advance the internal burst counter,
controlling burst access after the external address is
loaded. When ADV/LD# is HIGH, R/W# is ignored. A LOW
on ADV/LD# clocks a new address at the CLK rising edge.
Synchronous Clock Enable: This active LOW input permits
CLK to propagate throughout the device. When CKE is
HIGH, the device ignores the CLK input and effectively
internally extends the previous CLK cycle. This input must
meet setup and hold times around the rising edge of CLK.
Snooze Enable: This active HIGH, asynchronous input
causes the device to enter a low-power standby mode in
which all data in the memory array is retained. When ZZ is
active, all other inputs are ignored.
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
TQFP PIN DESCRIPTIONS (CONTINUED)
x18
88
x32/x36
88
31
31
MODE
(LBO#)
Input
(a) 58, 59, 62, 63,
68, 69, 72-74
(b) 8, 9, 12, 13,
18, 19, 22-24
(a) 52, 53, 56-59,
62, 63
(b) 68, 69, 72-75,
78, 79
(c) 2, 3, 6-9,
12, 13
(d) 18, 19, 22-25,
28, 29
DQa
Input/
Output
n/a
SYMBOL TYPE
R/W#
Input
DQb
DQc
DESCRIPTION
Read/Write: This input determines the cycle type when
ADV/LD# is LOW and is the only means for determining
READs and WRITEs. READ cycles may not be converted into
WRITEs (and vice versa) other than by loading a new
address. A LOW on this pin permits BYTE WRITE operations
and must meet the setup and hold times around the rising
edge of CLK. Full bus-width WRITEs occur if all byte write
enables are LOW.
Mode: This input selects the burst sequence. A LOW on
this pin selects linear burst. NC or HIGH on this pin selects
interleaved burst. Do not alter input state while device is
operating. LBO# is the JEDEC-standard term for MODE.
SRAM Data I/Os: Byte “ a” is associated with DQa pins; Byte
“ b” is associated with DQb pins; Byte “ c” is associated
with DQc pins; Byte “ d” is associated with DQd pins.
Input data must meet setup and hold times around the
rising edge CLK.
DQd
15, 16, 41, 65, 91
51
80
1
30
15, 16, 41, 65, 91
4, 11, 20, 27,
54, 61, 70, 77
5, 10, 14, 17, 21,
26, 40, 55, 60,
66, 67, 71, 76, 90
4, 11, 20, 27,
54, 61, 70, 77
5, 10, 14, 17, 21,
26, 40, 55, 60,
66, 67, 71, 76, 90
VDDQ
Supply
VSS
Supply
1-3, 6, 7, 25,
28-30, 51-53, 56,
57, 75, 78, 79,
95, 96
38, 39, 42, 43
n/a
NC
–
No Connect: These pins can be left floating or connected
to GND to minimize thermal impedance.
38, 39, 42, 43
DNU
–
Do Not Use: These signals may either be unconnected or
wired to GND to minimize thermal impedance.
84
84
NF
–
No Function: This pin is internally connected to the die and
will have the capacitance of an input pin. It is allowable to
leave this pin unconnected or driven by signals. Pin 84 is
reserved as an address pin for the 18Mb ZBT SRAM.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
NF/DQPa NF/
NF/DQPb I/O
NF/DQPc
NF/DQPd
VDD
Supply
No Function/Data Bits: On the x32 version, these pins are
No Function (NC) and can be left floating or connected to
GND to minimize thermal impedance. On the x36 version,
these bits are DQs.
Power Supply: See DC Electrical Characteristics and
Operating Conditions for range.
Isolated Output Buffer Supply: See DC Electrical
Characteristics and Operating Conditions for range.
Ground: GND.
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
PIN LAYOUT (TOP VIEW)
165-PIN FBGA
x18
x32/x36
10
11
CKE# ADV/LD# SA
SA
SA
R/W# OE# (G#)
NC
SA
NC
VSS
VDDQ
NC
DQPa
VSS
VDD
VDDQ
NC
DQa
VSS
VSS
VDD
VDDQ
NC
DQa
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
NC
VDD
VSS
VSS
VSS
VDD
NC
NC
ZZ
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
DQPb
NC
VDDQ
VSS
NC
NC
VSS
VSS
VDDQ
NC
NC
NC
NC
SA
SA
DNU
SA1
DNU
SA
SA
SA
NC
MODE
(LBO#)
NC
SA
SA
DNU
SA0
DNU
SA
SA
SA
SA
1
2
3
4
5
6
NC
SA
CE#
BWb#
NC
CE2#
NC
SA
CE2
NC
BWa#
CLK
NC
NC
VDDQ
VSS
VSS
VSS
VSS
NC
DQb
VDDQ
VDD
VSS
VSS
NC
DQb
VDDQ
VDD
VSS
NC
DQb
VDDQ
VDD
NC
DQb
VDDQ
VSS
VDD
DQb
7
8
9
A
A
B
VSS
VDD
VDDQ
DQb
DQb
VSS
VSS
VDD
VDDQ
DQb
DQb
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
NC
VDD
VSS
VSS
VSS
VDD
NC
NC
ZZ
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
NF/DQPd
NC
VDDQ
VSS
NC
NC
VSS
VSS
VDDQ
NC
NF/DQPa
NC
NC
SA
SA
DNU
SA1
DNU
SA
SA
SA
NC
MODE
(LBO#)
NC
SA
SA
DNU
SA0
DNU
SA
SA
SA
SA
NF/DQPc
NC
VDDQ
VSS
VSS
VSS
VSS
DQc
DQc
VDDQ
VDD
VSS
VSS
DQc
DQc
VDDQ
VDD
VSS
DQc
DQc
VDDQ
VDD
DQc
DQc
VDDQ
VSS
VDD
DQd
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NF/DQPb
CLK
M
N
P
NC
BWd# BWa#
L
M
N
VDDQ
CE2
K
L
M
VSS
SA
A
J
K
L
NC
NC
9
H
J
K
SA
CE2#
8
G
H
J
NC
BWc# BWb#
7
F
G
H
R/W# OE# (G#)
CE#
6
E
F
G
NC
SA
5
D
E
F
SA
NC
4
C
D
E
CKE# ADV/LD# SA
3
B
C
D
11
2
A
B
C
10
1
N
P
R
P
R
R
TOP VIEW
TOP VIEW
*No Function (NF) is used on the x32 version. Parity (DQPx) is used on the x36 version.
NOTE: Pin 9B is reserved for address expansion to 18Mb.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FBGA PIN DESCRIPTIONS
x18
x32/x36
SYMBOL
TYPE
6R
6P
2A, 9A, 2B,
3P, 3R, 4P, 4R,
8P, 8R, 9P, 9R,
10A, 10B, 10P,
10R, 11A, 11R
6R
6P
2A, 9A, 2B,
3P, 3R, 4P, 4R,
8P, 8R, 9P,
9R, 10A, 10B,
10P, 10R, 11R
SA0
SA1
SA
Input
Synchronous Address Inputs: These inputs are registered and must
meet the setup and hold times around the rising edge of CLK.
DESCRIPTION
5B
4A
–
–
5B
5A
4A
4B
BWa#
BWb#
BWc#
BWd#
Input
Synchronous Byte Write Enables: These active LOW inputs allow
individual bytes to be written and must meet the setup and hold
times around the rising edge of CLK. A byte write enable is LOW
for a WRITE cycle and HIGH for a READ cycle. For the x18 version,
BWa# controls DQa’s and DQPa; BWb# controls DQb’s and DQPb.
For the x32 and x36 versions, BWa# controls DQa’s and DQPa; BWb#
controls DQb’s and DQPb; BWc# controls DQc’s and DQPc; BWd#
controls DQd’s and DQPd. Parity is only available on the x18 and x36
versions.
7A
7A
CKE#
Input
Synchronous Clock Enable: This active LOW input permits CLK to
propogate throughout the device. When CKE# is HIGH, the device
ignores the CLK input and effectively internally extends the
previous CLK cycle. This input must meet the setup and hold times
around the rising edge of CLK.
7B
7B
R/W#
Input
Read/Write: This input determines the cycle type when ADV/LD# is
LOW and is the only means for determining READs and WRITEs.
READ cycles may not be converted into WRITEs (and vice versa)
other than by loading a new address. A LOW on this pin permits
BYTE WRITE operations to meet the setup and hold times around
the rising edge of CLK. Full bus-width WRITEs occur if all byte write
enables are LOW.
6B
6B
CLK
Input
Clock: This signal registers the address, data, chip enable, byte write
enables, and burst control inputs on its rising edge. All synchronous
inputs must meet setup and hold times around the clock’s rising
edge.
3A
3A
CE#
Input
Synchronous Chip Enable: This active LOW input is used to enable
the device. CE# is sampled only when a new external address is
loaded. (ADV/LD# is LOW)
6A
6A
CE2#
Input
Synchronous Chip Enable: This active LOW input is used to enable
the device and is sampled only when a new external address is
loaded.
11H
11H
ZZ
Input
Snooze Enable: This active HIGH, asynchronous input causes the
device to enter a low-power standby mode in which all data in the
memory array is retained. When ZZ is active, all other inputs are
ignored.
3B
3B
CE2
Input
Synchronous Chip Enable: This active HIGH input is used to enable
the device and is sampled only when a new external address is
loaded.
8B
8B
OE#(G#)
Input
Output Enable: This active LOW, asynchronous input enables the
data I/O output drivers.
(continued on next page)
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FBGA PIN DESCRIPTIONS (continued)
x18
x32/x36
SYMBOL
TYPE
8A
8A
ADV/LD#
Input Synchronous Address Advance/Load: When HIGH, this input is
used to advance the internal burst counter, controlling burst
access after the external address is loaded. When ADV/LD# is
HIGH, R/W# is ingored. A LOW on ADV/LD# clocks a new
address at the CLK rising edge.
1R
1R
MODE
(LB0#)
(a) 10J, 10K,
10L, 10M, 11D,
11E, 11F, 11G
(b) 1J, 1K,
1L, 1M, 2D,
2E, 2F, 2G
(a) 10J, 10K,
10L, 10M, 11J,
11K, 11L, 11M
(b) 10D, 10E,
10F, 10G, 11D,
11E, 11F, 11G
(c) 1D, 1E,
1F, 1G, 2D,
2E, 2F, 2G
(d) 1J, 1K, 1L,
1M, 2J, 2K,
2L, 2M
DQa
11C
1N
–
–
11N
11C
1C
1N
2H, 4D, 4E, 4F, 2H, 4D, 4E, 4F,
4G, 4H, 4J,
4G, 4H, 4J,
4K, 4L, 4M,
4K, 4L, 4M,
8D, 8E, 8F,
8D, 8E, 8F,
8G, 8H, 8J,
8G, 8H, 8J,
8K, 8L, 8M
8K, 8L, 8M
3C, 3D, 3E,
3F, 3G, 3J,
3K, 3L, 3M,
3N, 9C, 9D,
9E, 9F, 9G,
9J, 9K, 9L,
9M, 9N
3C, 3D, 3E,
3F, 3G, 3J,
3K, 3L, 3M,
3N, 9C, 9D,
9E, 9F, 9G,
9J, 9K, 9L,
9M, 9N
DQb
Input
DESCRIPTION
Mode: This input selects the burst sequence. A LOW on this
input selects “ linear burst.” NC or HIGH on this input selects
“ interleaved burst.” Do not alter input state while device is
operating.
Input/ SRAM Data I/Os: For the x18 version, Byte “ a” is associated DQas;
Output Byte “ b” is associated with DQbs. For the x32 and x36 versions,
Byte “ a” is associated with DQas; Byte “ b” is associated with DQbs;
Byte “ c” is associated with DQcs; Byte “ d” is associated with DQds.
Input data must meet setup and hold times around the rising edge
of CLK.
DQc
DQd
NF/DQPa
NF/DQPb
NF/DQPc
NF/DQPd
VDD
VDDQ
NF /
I/O
No Function/Parity Data I/Os: On the x32 version, these are No
Function (NF). On the x18 version, Byte “ a” parity is DQPa; Byte
“ b” parity is DQPb. On the x36 version, Byte “ a” parity is DQPa;
Byte “ b” parity is DQPb; Byte “ c” parity is DQPc; Byte “ d” parity is
DQPd.
Supply Power Supply: See DC Electrical Characteristics and Operating
Conditions for range.
Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and
Operating Conditions for range.
(continued on next page)
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
10
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FBGA PIN DESCRIPTIONS (continued)
x18
x32/x36
SYMBOL
TYPE
DESCRIPTION
1H, 4C, 4N,
1H, 4C, 4N,
5C, 5D, 5E, 5F, 5C, 5D, 5E, 5F,
5G, 5H, 5J,
5G, 5H, 5J,
5K, 5L, 5M,
5K, 5L, 5M,
6C, 6D, 6E, 6F, 6C, 6D, 6E, 6F,
6G, 6H, 6J,
6G, 6H, 6J,
6K, 6L, 6M,
6K, 6L, 6M,
7C, 7D, 7E,
7C, 7D, 7E,
7F, 7G, 7H,
7F, 7G, 7H,
7J, 7K, 7L,
7J, 7K, 7L,
7M, 7N, 8C, 8N 7M, 7N, 8C, 8N
VSS
5P, 5R, 7P, 7R 5P, 5R, 7P, 7R
DNU
–
Do Not Use: These signals may either be unconnected or wired to
GND to improve package heat dissipation.
NC
–
No Connect: These signals are not internally connected and may
be connected to ground to improve package heat dissipation.
Pin 9B is reserved for 16MB address expansion.
NF
—
No Function: These pins are internally connected to the die and
have the capacitance of an input pin. It is allowable to leave
these pins unconnected or driven by signals.
1A, 1B, 1C,
1D, 1E, 1F,
1G, 1P, 2C,
2J, 2K, 2L,
2M, 2N, 2P,
2R, 3H, 4B,
9B, 5A, 5N,
6N, 9H, 10C,
10D, 10E,
10F, 10G,
10H, 10N,
11B, 11J,
11K, 11L,
11M, 11N,
11P
1A, 1B, 1P,
2C, 2N, 2P,
2R, 3H, 5N,
6N, 9B, 9H,
10C, 10H,
10N, 11A,
11B, 11P
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
Supply Ground: GND.
11
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)
FIRST ADDRESS (EXTERNAL)
SECOND ADDRESS (INTERNAL)
THIRD ADDRESS (INTERNAL)
FOURTH ADDRESS (INTERNAL)
X...X00
X...X01
X...X10
X...X11
X...X01
X...X00
X...X11
X...X10
X...X10
X...X11
X...X00
X...X01
X...X11
X...X10
X...X01
X...X00
LINEAR BURST ADDRESS TABLE (MODE = LOW)
FIRST ADDRESS (EXTERNAL)
SECOND ADDRESS (INTERNAL)
THIRD ADDRESS (INTERNAL)
FOURTH ADDRESS (INTERNAL)
X...X00
X...X01
X...X10
X...X11
X...X01
X...X10
X...X11
X...X00
X...X10
X...X11
X...X00
X...X01
X...X11
X...X00
X...X01
X...X10
PARTIAL TRUTH TABLE FOR READ/WRITE COMMANDS (x18)
FUNCTION
R/W#
BWa#
BWb#
READ
WRITE Byte “ a”
H
L
X
L
X
H
WRITE Byte “ b”
WRITE All Bytes
WRITE ABORT/NOP
L
L
L
H
L
H
L
L
H
NOTE: Using R/W# and byte write(s), any one or more bytes may be
written.
PARTIAL TRUTH TABLE FOR READ/WRITE COMMANDS (x32/x36)
FUNCTION
READ
R/W#
H
BWa#
X
BWb#
X
BWc#
X
BWd#
X
WRITE Byte “ a”
WRITE Byte “ b”
WRITE Byte “ c”
WRITE Byte “ d”
WRITE All Bytes
L
L
L
L
L
L
H
H
H
L
H
L
H
H
L
H
H
L
H
L
H
H
H
L
L
WRITE ABORT/NOP
L
H
H
H
H
NOTE: Using R/W# and byte write(s), any one or more bytes may be written.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
12
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
STATE DIAGRAM FOR ZBT SRAM
DS
BURST
DS
DS
DESELECT
W
D
TE
RI
A
RE
READ
S
WRITE
BEGIN
READ
READ
D
DS
READ
BURST
BURST
AD
RE
E
RIT
W
BURST
KEY:
BURST
READ
COMMAND
DS
READ
WRITE
BURST
BEGIN
WRITE
WRITE
WRITE
BURST
WRITE
BURST
OPERATION
DESELECT
New READ
New WRITE
BURST READ,
BURST WRITE, or
CONTINUE DESELECT
NOTE: 1. A STALL or IGNORE CLOCK EDGE cycle is not shown in the above diagram. This is because CKE# HIGH only blocks the
clock (CLK) input and does not change the state of the device.
2. States change on the rising edge of the clock (CLK).
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
13
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
TRUTH TABLE
(Notes 5-10)
OPERATION
DESELECT Cycle
DESELECT Cycle
DESELECT Cycle
CONTINUE DESELECT Cycle
READ Cycle
(Begin Burst)
READ Cycle
(Continue Burst)
NOP/DUMMY READ
(Begin Burst)
DUMMY READ
(Continue Burst)
WRITE Cycle
(Begin Burst)
WRITE Cycle
(Continue Burst)
NOP/WRITE ABORT
(Begin Burst)
WRITE ABORT
(Continue Burst)
IGNORE CLOCK EDGE
(Stall)
SNOOZE MODE
ADDRESS
USED CE# CE2# CE2 ZZ
None
H
X
X
L
None
X
H
X
L
None
X
X
L
L
None
X
X
X
L
External L
L
H
L
ADV/
LD# R/W# BWx OE# CKE#
L
X
X
X
L
L
X
X
X
L
L
X
X
X
L
H
X
X
X
L
L
H
X
L
L
CLK
L-H
L-H
L-H
L-H
L-H
DQ
High-Z
High-Z
High-Z
High-Z
Q
NOTES
1
Next
X
X
X
L
H
X
X
L
L
L-H
Q
1, 11
External
L
L
H
L
L
H
X
H
L
L-H
High-Z
2
Next
X
X
X
L
H
X
X
H
L
L-H
High-Z
External
L
L
H
L
L
L
L
X
L
L-H
D
1, 2,
11
3
Next
X
X
X
L
H
X
L
X
L
L-H
D
None
L
L
H
L
L
L
H
X
L
L-H
High-Z
Next
X
X
X
L
H
X
H
X
L
L-H
High-Z
Current
X
X
X
L
X
X
X
X
H
L-H
–
None
X
X
X
H
X
X
X
X
X
X
High-Z
1, 3,
11
2, 3
1, 2,
3, 11
4
NOTE: 1. CONTINUE BURST cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or
WRITE) is chosen in the initial BEGIN BURST cycle. A CONTINUE DESELECT cycle can only be entered if a DESELECT cycle
is executed first.
2. DUMMY READ and WRITE ABORT cycles can be considered NOPs because the device performs no external operation.
A WRITE ABORT means a WRITE command is given, but no operation is performed.
3. OE# may be wired LOW to minimize the number of control signals to the SRAM. The device will automatically turn off
the output drivers during a WRITE cycle. OE# may be used when the bus turn-on and turn-off times do not meet an
application’s requirements.
4. If an IGNORE CLOCK EDGE command occurs during a READ operation, the DQ bus will remain active (Low-Z). If it
occurs during a WRITE cycle, the bus will remain in High-Z. No WRITE operations will be performed during the IGNORE
CLOCK EDGE cycle.
5. X means “ Don’t Care.” H means logic HIGH. L means logic LOW. BWx = H means all byte write signals (BWa#, BWb#,
BWc# and BWd#) are HIGH. BWx = L means one or more byte write signals are LOW.
6. BWa# enables WRITEs to Byte “ a” (DQa pins); BWb# enables WRITEs to Byte “ b” (DQb pins); BWc# enables WRITEs to
Byte “ c” (DQc pins); BWd# enables WRITEs to Byte “ d” (DQd pins).
7. All inputs except OE# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
8. Wait states are inserted by setting CKE# HIGH.
9. This device contains circuitry that will ensure that the outputs will be in High-Z during power-up.
10. The device incorporates a 2-bit burst counter. Address wraps to the initial address every fourth BURST cycle.
11. The address counter is incremented for all CONTINUE BURST cycles.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
14
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
ABSOLUTE MAXIMUM RATINGS*
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Junction temperature depends upon package type,
cycle time, loading, ambient temperature, and airflow.
See Micron Technical Note TN-05-14 for more
information.
Voltage on VDD Supply
Relative to VSS .................................. -0.5V to +4.6V
Voltage on VDDQ Supply
Relative to VSS ..................................... -0.5V to VDD
VIN ............................................... -0.5V to VDDQ + 0.5V
Storage Temperature (TQFP) ............ -55°C to +150°C
Storage Temperature (FBGA) ........... -55°C to +125°C
Junction Temperature** ................................... +150°C
Short Circuit Output Current .......................... 100mA
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0° C ≤ TA ≤ +70° C; VDD, VDDQ = +3.3V ±0.165V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
CONDITIONS
DQ pins
0V ≤ VIN ≤ VDD
Output(s) disabled,
0V ≤ VIN ≤ VDD
IOH = -4.0mA
IOL = 8.0mA
Supply Voltage
Isolated Output Buffer Supply
SYMBOL
VIH
VIH
MIN
2.0
2.0
MAX
VDD + 0.3
VDD + 0.3
UNITS
V
V
NOTES
1, 2
1, 2
VIL
ILI
ILO
-0.3
-1.0
0.8
1.0
V
µA
1, 2
3
-1.0
1.0
µA
VOH
VOL
2.4
0.4
V
V
1, 4
1, 4
VDD
VDDQ
3.135
3.135
3.465
VDD
V
V
1
1, 5
NOTE: 1. All voltages referenced to VSS (GND).
2. Overshoot:
VIH ≤ +4.6V for t ≤ tKHKH/2 for I ≤ 20mA
Undershoot: VIL ≥ -0.7V for t ≤ tKHKH/2 for I ≤ 20mA
Power-up:
VIH ≤ +3.465V and VDD ≤ +3.135V for t ≤ 200ms
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. The load used for VOH, VOL testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O
curves are available upon request.
5. VDDQ should never exceed VDD. VDD and VDDQ can be externally wired together to the same power supply.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
15
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0° C ≤ TA ≤ +70° C; VDD = +3.3V ±0.165V; VDDQ = +2.5V +0.4V/-0.125V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
CONDITIONS
Data bus (DQx)
SYMBOL
VIHQ
MIN
1.7
Inputs
VIH
1.7
VDD + 0.3
V
1, 2
VIL
ILI
ILO
-0.3
-1.0
-1.0
0.7
1.0
1.0
V
µA
µA
1, 2
3
0V ≤ VIN ≤ VDD
Output(s) disabled,
0V ≤ VIN ≤ VDDQ (DQx)
MAX
UNITS
VDDQ + 0.3
V
NOTES
1, 2
Output High Voltage
IOH = -2.0mA
VOH
1.7
–
V
1
Output Low Voltage
IOH = -1.0mA
IOL = 2.0mA
VOH
VOL
2.0
–
–
0.7
V
V
1
1
IOL = 1.0mA
VOL
VDD
VDDQ
–
3.135
0.4
3.465
V
V
1
1
2.375
2.9
V
1
CONDITIONS
SYMBOL
TYP
MAX
UNITS
NOTES
TA = +25° C; f = 1 MHz
VDD = 3.3V
CI
CO
CA
CCK
3
4
3
4
5
3.5
pF
pF
pF
1
1
1
3
3.5
pF
1
Supply Voltage
Isolated Output Buffer Supply
TQFP CAPACITANCE
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
FBGA CAPACITANCE
DESCRIPTION
CONDITIONS
Address/Control Input Capacitance
Output Capacitance (Q)
TA = 25° C; f = 1 MHz
Clock Capacitance
SYMBOL
TYP
MAX
UNITS
NOTES
CI
2.5
3.5
pF
4
CO
4
5
pF
4
CCK
2.5
3.5
pF
4
NOTE: 1. All voltages referenced to VSS (GND).
2. Overshoot:
VIH ≤ +4.6V for t ≤ tKHKH/2 for I ≤ 20mA
Undershoot: VIL ≥ -0.7V for t ≤ tKHKH/2 for I ≤ 20mA
Power-up:
VIH ≤ +3.465V and VDD ≤ +3.135V for t ≤ 200ms
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. This parameter is sampled.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
16
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
IDD OPERATING CONDITIONS AND MAXIMUM LIMITS
(Note 1) (0° C ≤ TA ≤ +70° C; VDD = +3.3V ±0.165V unless otherwise noted)
MAX
DESCRIPTION
Power Supply
Current: Operating
CONDITIONS
SYMBOL
TYP
-10
-11
-12
Device selected; All inputs ≤ VIL
or ≥ VIH; Cycle time ≥ tKC (MIN);
VDD = MAX; Outputs open
UNITS NOTES
I DD
165
300
275
250
mA
2, 3, 4
IDD1
10
28
22
20
mA
2, 3, 4
Power Supply
Current: Idle
Device selected; VDD = MAX;
CKE# ≥ VIH;
All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time ≥ tKC (MIN)
CMOS Standby
Device deselected; VDD = MAX;
All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2;
All inputs static; CLK frequency = 0
ISB2
0.5
10
10
10
mA
3, 4
Device deselected; VDD = MAX;
All inputs ≤ VIL or ≥ VIH;
All inputs static; CLK frequency = 0
ISB3
6
25
25
25
mA
3, 4
Device deselected; VDD = MAX;
ADV/LD# ≥ VIH; All inputs ≤ VSS + 0.2
or ≥ VDD - 0.2; Cycle time ≥ tKC (MIN)
ISB4
37
65
65
60
mA
3, 4
ZZ ≥ VIH
ISB2Z
0.5
10
10
10
mA
4
TTL Standby
Clock Running
Snooze Mode
TQFP THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
θJA
40
° C/W
5
θJC
8
° C/W
5
NOTE: 1. VDDQ = +3.3V ±0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
3. “ Device deselected” means device is in a deselected cycle as defined in the truth table. “ Device selected” means device
is active (not in deselected mode).
4. Typical values are measured at +3.3V, +25° C and 12ns cycle time.
5. This parameter is sampled.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
17
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FBGA THERMAL RESISTANCE
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
θJA
40
° C/W
1, 11
θJC
9
° C/W
1, 11
θJB
17
° C/W
1, 11
UNITS
NOTES
ns
MHz
ns
ns
5
5
ns
ns
ns
ns
ns
ns
ns
6
6, 7, 8, 9
6, 7, 8, 9
2
6, 7, 8, 9
6, 7, 8, 9
Junction to Pins (Bottom)
AC ELECTRICAL CHARACTERISTICS
(Notes 2, 3, 4) (0° C ≤ TA ≤ +70° C; VDD = +3.3V ±0.165V unless otherwise noted)
-10
DESCRIPTION
Clock
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
Output Times
Clock to output valid
Clock to output invalid
Clock to output in Low-Z
Clock to output in High-Z
OE# to output valid
OE# to output in Low-Z
OE# to output in High-Z
Setup Times
Address
Clock enable (CKE#)
Control signals
Data-in
Hold Times
Address
Clock enable (CKE#)
Control signals
Data-in
SYMBOL
MIN
tKHKH
10
fKF
tKHKL
tKLKH
tKHQX1
7.5
0
tAVKH
tEVKH
tCVKH
tDVKH
tKHAX
tKHEX
tKHCX
tKHDX
83
3.0
3.0
8.5
9.0
3.0
3.0
5.0
5.0
0
5.0
MAX
12
3.0
3.0
5.0
5.0
tGHQZ
MIN
90
3.0
3.0
3.0
3.0
tGLQV
-12
MAX
11
2.5
2.5
tKHQZ
tGLQX
MIN
100
tKHQV
tKHQX
-11
MAX
5.0
5.0
0
5.0
5.0
2.0
2.0
2.0
2.0
2.2
2.2
2.2
2.2
2.5
2.5
2.5
2.5
ns
ns
ns
ns
10
10
10
10
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
10
10
10
10
NOTE: 1. This parameter is sampled.
2. OE# can be considered a “ Don’t Care” during WRITEs; however, controlling OE# can help fine-tune a system for
turnaround timing.
3. Test conditions as specified with output loading as shown in Figure 1 for 3.3V I/O (VDDQ = +3.3V ±0.165V) and
Figure 3 for 2.5V I/O (VDDQ = +2.5V +0.4V/-0.125V).
4. A WRITE cycle is defined by R/W# LOW having been registered into the device at ADV/LD# LOW. A READ cycle is
defined by R/W# HIGH with ADV/LD# LOW. Both cases must meet setup and hold times.
5. Measured as HIGH above VIH and LOW below VIL.
6. Refer to Technical Note TN-55-01, “ Designing with ZBT SRAMs,” for a more thorough discussion on these parameters.
7. This parameter is sampled.
8. This parameter is measured with output loading as shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O.
9. Transition is measured ±200mV from steady state voltage.
10. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK
when they are being registered into the device. All other synchronous inputs must meet the setup and hold times with
stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at each rising
edge of CLK when ADV/LD# is LOW to remain enabled.
11. Preliminary package data.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
18
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
3.3V I/O AC TEST CONDITIONS
2.5V I/O AC TEST CONDITIONS
Input pulse levels ................................... VSS to 3.3V
Input pulse levels ................................... VSS to 2.5V
Input rise and fall times ..................................... 1ns
Input rise and fall times ..................................... 1ns
Input timing reference levels .......................... 1.5V
Input timing reference levels ........................ 1.25V
Output reference levels ................................... 1.5V
Output reference levels ................................. 1.25V
Output load ............................. See Figures 1 and 2
Output load ............................. See Figures 3 and 4
3.3V I/O Output Load Equivalents
2.5V I/O Output Load Equivalents
Q
Q
Z O= 50
Z O= 50Ω
50
50Ω
VT = 1.25V
VT = 1.5V
Figure 1
Figure 3
+3.3V
+2.5V
225Ω
317
Q
Q
5pF
351
5pF
225Ω
Figure 2
Figure 4
LOAD DERATING CURVES
The Micron 512K x 18, 256K x 32, and 256K x 36
ZBT SRAM timing is dependent upon the capacitive
loading on the outputs.
Consult the factory for copies of I/O current
versus voltage curves.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
19
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
SNOOZE MODE
SNOOZE MODE is a low-current, “power-down”
mode in which the device is deselected and current is
reduced to ISB2Z. The duration of SNOOZE MODE is
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all
inputs except ZZ become disabled and all outputs go to
High-Z.
The ZZ pin is an asynchronous, active HIGH input
that causes the device to enter SNOOZE MODE. When
the ZZ pin becomes a logic HIGH, ISB2Z is guaranteed
after the time tZZI is met. Any READ or WRITE operation pending when the device enters SNOOZE MODE is
not guaranteed to complete successfully. Therefore,
SNOOZE MODE must not be initiated until valid pending operations are completed. Similarly, when exiting
SNOOZE MODE during tRZZ, only a DESELECT or
READ cycle should be given.
SNOOZE MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
MIN
MAX
UNITS
ISB2Z
10
mA
tZZ
0
tKHKH
ns
1
ZZ inactive to input sampled
tRZZ
0
tKHKH
ns
1
ZZ active to snooze current
tZZI
tKHKH
ns
1
ns
1
Current during SNOOZE MODE
CONDITIONS
SYMBOL
ZZ ≥ VIH
ZZ active to input ignored
tRZZI
ZZ inactive to exit snooze current
0
NOTES
NOTE: 1. This parameter is sampled.
SNOOZE MODE WAVEFORM
CLK
t ZZ
ZZ
I
t
t RZZ
ZZI
SUPPLY
I
ISB2Z
t RZZI
ALL INPUTS
(except ZZ)
DESELECT
or READ Only
Outputs (Q)
High-Z
DON’T CARE
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
20
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
READ/WRITE TIMING
1
2
tKHKH
3
4
5
6
7
8
9
A5
A6
A7
10
CLK
tEVKH
tKHEX
tCVKH
tKHCX
tKHKL tKLKH
CKE#
CE#
ADV/LD#
R/W#
BWx#
A1
ADDRESS
A2
A3
A4
tKHQV
tAVKH tKHAX
tKHQX
tKHQX1
DQ
D(A1)
D(A2)
D(A2+1)
tGLQV
Q(A3)
Q(A4+1)
Q(A4)
tGLQX
OE#
WRITE
D(A1)
WRITE
D(A2)
D(A5)
Q(A6)
D(A7)
WRITE
D(A7)
DESELECT
tGHQZ
tDVKH tKHDX
COMMAND
tKHQZ
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
tKHQX
WRITE
D(A5)
READ
Q(A6)
DON’T CARE
UNDEFINED
READ/WRITE TIMING PARAMETERS
-10
SYM
MIN
tKHKH
10
fKF
tKHKL
tKLKH
tKHQX1
100
NOTE: 1.
2.
3.
4.
UNITS
83
ns
MHz
9.0
3.0
3.0
8.5
3.0
3.0
5.0
5.0
0
-10
MAX
12
3.0
3.0
5.0
5.0
0
MIN
90
7.5
tGLQV
-12
MAX
3.0
3.0
3.0
3.0
tKHQZ
tGLQX
MIN
11
2.5
2.5
tKHQV
tKHQX
-11
MAX
5.0
5.0
0
-11
MIN
2.0
2.2
2.5
UNITS
ns
ns
ns
ns
ns
tEVKH
2.0
2.0
2.0
2.2
2.2
2.2
2.5
2.5
2.5
ns
ns
ns
ns
ns
tKHAX
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
tKHCX
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
tCVKH
tDVKH
tKHEX
tKHDX
MAX
5.0
MIN
-12
SYM
tGHQZ
tAVKH
MAX
5.0
MIN
MAX
5.0
For this waveform, ZZ is tied LOW.
Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
recent data may be from the input data register.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
21
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
NOP, STALL, AND DESELECT CYCLES
1
2
3
A1
A2
4
5
A3
A4
6
7
8
9
10
CLK
CKE#
CE#
ADV/LD#
R/W#
BWx#
ADDRESS
A5
tKHQZ
D(A1)
DQ
Q(A2)
Q(A3)
D(A4)
Q(A5)
tKHQX
COMMAND
WRITE
D(A1)
READ
Q(A2)
STALL
READ
Q(A3)
WRITE
D(A4)
STALL
NOP
READ
Q(A5)
DON’T CARE
DESELECT
CONTINUE
DESELECT
UNDEFINED
NOP, STALL, AND DESELECT TIMING PARAMETERS
-10
SYM
tKHQX
tKHQZ
MIN
3.0
-11
MAX
MIN
3.0
5.0
-12
MAX
5.0
MIN
3.0
MAX
5.0
UNITS
ns
ns
NOTE: 1. The IGNORE CLOCK EDGE or STALL cycle (clock 3) illustrates CKE# being used to create a “ pause.” A WRITE is not
performed during this cycle.
2. For this waveform, ZZ and OE# are tied LOW.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
recent data may be from the input data register.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
22
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
100-PIN PLASTIC TQFP (JEDEC LQFP)
PIN #1 ID
22.10
+0.10
-0.15
0.15
+0.03
-0.02
0.32
+0.06
-0.10
0.65
20.10 ±0.10
DETAIL A
0.62
1.50 ±0.10
0.10
14.00 ±0.10
16.00
+0.20
-0.05
0.25
0.10
+0.10
-0.05
GAGE PLANE
1.00 (TYP)
0.60 ±0.15
1.40 ±0.05
DETAIL A
NOTE:
1. All dimensions in millimeters.
2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
23
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
165-PIN FBGA
0.85 ±0.075
0.12 C
SEATING PLANE
C
BALL A11
165X Ø 0.45
SOLDER BALL DIAMETER REFERS
TO POST REFLOW CONDITION. THE
PRE-REFLOW DIAMETER IS Ø 0.40
10.00
BALL A1
PIN A1 ID
1.00
TYP
1.20 MAX
PIN A1 ID
7.50 ±0.05
14.00
15.00 ±0.10
7.00 ±0.05
1.00
TYP
MOLD COMPOUND: EPOXY NOVOLAC
6.50 ±0.05
SUBSTRATE: PLASTIC LAMINATE
5.00 ±0.05
SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb
SOLDER BALL PAD: Ø .33mm
13.00 ±0.10
NOTE: 1. All dimensions in millimeters MAX or typical where noted.
MIN
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc.
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc.,
and the architecture is supported by Micron Technology, Inc., and Motorola Inc.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
24
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
REVISION HISTORY
Removed "Preliminary Package Data" from front page ....................................................................... February 22/02
Removed 119-pin PBGA package and references ................................................................................. February 14/02
Removed note "Not Recommended for New Designs," Rev. 6/01 ................................................................ June 7/01
Added industrial temperature references and notes, Rev. 3/01 ................................................................ March 19/01
Changed 16Mb references to 18Mb
Changed NC/DQPx to NF/DQPx
Added 119-pin PBGA package, Rev. 1/01, FINAL ................................................................................. January 10/01
Removed FBGA Part Marking Guide, Rev. 8/00, FINAL ........................................................................... August 1/00
Added FBGA Part Marking Guide, Rev 7/00 .................................................................................................... 7/21/00
Added Revision History
Removed 119-Pin PBGA packages and references
Added 165-pin FBGA Package ........................................................................................................................... 6/13/00
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
25
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
工商网监
湘ICP备2023018690号
