MT58L512L18P

8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 8Mb SYNCBURST™ SRAM FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply (VDD) • Separate +3.3V or +2.5V isolated output buffer supply (VDDQ) • SNOOZE MODE for reduced-power standby • Single-cycle deselect (Pentium® BSRAM-compatible) • Common data inputs and data outputs • Individual BYTE WRITE control and GLOBAL WRITE • Three chip enables for simple depth expansion and address pipelining • Clock-controlled and registered addresses, data I/Os and control signals • Internally self-timed WRITE cycle • Burst control (interleaved or linear burst) • Automatic power-down for portable applications • 100-pin TQFP package • 165-pin FBGA package • Low capacitive bus loading • x18, x32, and x36 versions available MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect 100-Pin TQFP1 165-Pin FBGA OPTIONS • Timing (Access/Cycle/MHz) 3.5ns/6ns/166 MHz 4.0ns/7.5ns/133 MHz 5ns/10ns/100 MHz • Configurations 3.3V I/O 512K x 18 256K x 32 256K x 36 2.5V I/O 512K x 18 256K x 32 256K x 36 • Packages 100-pin TQFP (2-chip enable) 100-pin TQFP (3-chip enable) 165-pin, 13mm x 15mm FBGA • Operating Temperature Range Commercial (0°C to +70°C) Industrial (-40°C to +85°C)** Part Number Example: MARKING -6 -7.5 -10 MT58L512L18P MT58L256L32P MT58L256L36P MT58L512V18P MT58L256V32P MT58L256V36P T S F* None IT NOTE: 1. JEDEC-standard MS-026 BHA (LQFP). * A Part Marking Guide for the FBGA devices can be found on Micron’s Web site—http://www.micron.com/support/index.html. ** Industrial temperature range offered in specific speed grades and configurations. Contact factory for more information. GENERAL DESCRIPTION The Micron® SyncBurst™ SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 8Mb SyncBurst SRAMs integrate a 512K x 18, 256K x 32, or 256K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK). The synchronous inputs include all addresses, all data inputs, active LOW chip enable (CE#), two additional chip enables for easy depth expansion (CE2, CE2#), burst control inputs (ADSC#, ADSP#, ADV#), byte write enables (BWx#) and global write MT58L512L18PT-6 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM FUNCTIONAL BLOCK DIAGRAM 512K X 18 19 SA0, SA1, SAs MODE ADV# CLK ADDRESS REGISTER 19 17 19 2 SA0-SA1 SA1' BINARY Q1 COUNTER AND LOGIC CLR Q0 SA0' ADSC# ADSP# BYTE “b” WRITE REGISTER BYTE “b” WRITE DRIVER 9 512K x 9 x 2 MEMORY ARRAY 9 18 SENSE AMPS 18 BWb# OUTPUT 18 REGISTERS OUTPUT BUFFERS 18 BWa# BWE# GW# CE# CE2 CE2# OE# BYTE “a” WRITE REGISTER BYTE “a” WRITE DRIVER E DQs DQPa DQPb ENABLE REGISTER 18 PIPELINED ENABLE 2 INPUT REGISTERS FUNCTIONAL BLOCK DIAGRAM 256K X 32/36 18 SA0, SA1, SAs ADDRESS REGISTER 18 16 SA0-SA1 18 MODE ADV# CLK Q1 BINARY COUNTER SA0' CLR Q0 SA1' ADSC# ADSP# BWd# BYTE “d” WRITE REGISTER BYTE “c” WRITE REGISTER 9 BWc# BYTE “c” WRITE DRIVER BYTE “b” WRITE DRIVER BYTE “a” WRITE DRIVER 9 256K x 8 x 4 (x32) 256K x 9 x 4 (x36) 36 SENSE AMPS 36 OUTPUT REGISTERS 36 BWb# BYTE “b” WRITE REGISTER 9 MEMORY ARRAY OUTPUT BUFFERS E 36 DQs DQPa DQPb DQPc DQPd BWa# BWE# GW# CE# CE2 CE2# OE# BYTE “a” WRITE REGISTER 9 INPUT REGISTERS ENABLE REGISTER 36 PIPELINED ENABLE 4 NOTE: Functional Block Diagrams illustrate simplified device operation. See Truth Table, Pin Descriptions, and timing diagrams for detailed information. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM GENERAL DESCRIPTION (continued) (GW#). Note that CE2# is not available on the T Version. Asynchronous inputs include the output enable (OE#), clock (CLK) and snooze enable (ZZ). There is also a burst mode input (MODE) that selects between interleaved and linear burst modes. The data-out (Q), enabled by OE#, is also asynchronous. WRITE cycles can be from one to two bytes wide (x18) or from one to four bytes wide (x32/x36), as controlled by the write control inputs. Burst operation can be initiated with either address status processor (ADSP#) or address status controller (ADSC#) inputs. Subsequent burst addresses can be internally generated as controlled by the burst advance input (ADV#). Address and write control are registered on-chip to simplify WRITE cycles. This allows self-timed WRITE cycles. Individual byte enables allow individual bytes to be written. During WRITE cycles on the x18 device, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb. During WRITE cycles on the x32 and x36 devices, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins and DQPc; BWd# controls DQd pins and DQPd. GW# LOW causes all bytes to be written. Parity bits are only available on the x18 and x36 versions. This device incorporates a single-cycle deselect feature during READ cycles. If the device is immediately deselected after a READ cycle, the output bus goes to a High-Z state tKQHZ nanoseconds after the rising edge of clock. Micron’s 8Mb SyncBurst SRAMs operate from a +3.3V VDD power supply, and all inputs and outputs are TTL-compatible. Users can choose either a 3.3V or 2.5V I/O version. The device is ideally suited for Pentium and PowerPC pipelined systems and systems that benefit from a very wide, high-speed data bus. The device is also ideal in generic 16-, 18-, 32-, 36-, 64-, and 72-bitwide applications. Please refer to Micron’s Web site (www.micron.com/ sramds) for the latest data sheet. TQFP PINOUTS At the time of the writing of this data sheet, there are two pinouts in the industry. Micron will support both pinouts for this part. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM TQFP PIN ASSIGNMENT TABLE PIN # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 x32/x36 NF/DQPc* DQc DQc VDDQ VSS NC DQc NC DQc DQb DQc DQb DQc VSS VDDQ DQb DQc DQb DQc VDD VDD NC VSS DQb DQd DQb DQd VDDQ VSS DQb DQd DQb DQd DQPb DQd NC DQd x18 NC NC NC PIN # 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 x32/x36 VSS VDDQ NC DQd NC DQd NC NF/DQPd* MODE SA SA SA SA SA1 SA0 DNU DNU VSS VDD NF NF (T Version) SA (S Version) SA SA SA SA SA SA SA x18 PIN # 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 x32/x36 NF/DQPa* DQa DQa VDDQ VSS NC DQa NC DQa DQa DQa VSS VDDQ DQa DQa ZZ VDD NC VSS DQa DQb DQa DQb VDDQ VSS DQa DQb DQa DQb DQPa DQb NC DQb x18 NC NC NC PIN # 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 x32/x36 VSS VDDQ NC DQb NC DQb SA NF/DQPb* SA SA ADV# ADSP# ADSC# OE# BWE# GW# CLK VSS VDD SA (T Version) CE2# (S Version) BWa# BWb# NC BWc# NC BWd# CE2 CE# SA SA x18 *No Function (NF) is used on the x32 version. Parity (DQPx) is used on the x36 version. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM PIN ASSIGNMENT (TOP VIEW) 100-PIN TQFP, 2-CHIP ENABLE, T VERSION SA NC NC VDDQ VSS NC DQPa DQa DQa VSS VDDQ DQa DQa VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa NC NC VSS VDDQ NC NC NC SA SA ADV# ADSP# ADSC# OE# BWE# GW# CLK VSS VDD SA BWa# BWb# NC NC CE2 CE# SA SA 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 81 49 82 48 83 47 84 46 85 45 86 44 87 43 88 42 89 41 90 40 91 39 92 38 93 37 94 36 95 35 96 34 97 33 98 32 99 31 100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 x18 SA SA SA SA SA SA SA NF NF VDD VSS DNU DNU SA0 SA1 SA SA SA SA MODE SA SA ADV# ADSP# ADSC# OE# BWE# GW# CLK VSS VDD SA BWa# BWb# BWc# BWd# CE2 CE# SA SA 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 81 49 82 48 83 47 84 46 85 45 86 44 87 43 88 42 89 41 90 40 91 39 92 38 93 37 94 36 95 35 96 34 97 33 98 32 99 31 100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 NF/DQPb* DQb DQb VDDQ VSS DQb DQb DQb DQb VSS VDDQ DQb DQb VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa DQa DQa VSS VDDQ DQa DQa NF/DQPa* NC NC NC VDDQ VSS NC NC DQb DQb VSS VDDQ DQb DQb VDD VDD NC VSS DQb DQb VDDQ VSS DQb DQb DQPb NC VSS VDDQ NC NC NC x32/x36 SA SA SA SA SA SA SA NF NF VDD VSS DNU DNU SA0 SA1 SA SA SA SA MODE *No Function (NF) is used on the x32 version. Parity (DQPx) is used on the x36 version. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 NF/DQPc* DQc DQc VDDQ VSS DQc DQc DQc DQc VSS VDDQ DQc DQc VDD VDD NC VSS DQd DQd VDDQ VSS DQd DQd DQd DQd VSS VDDQ DQd DQd NF/DQPd* 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM PIN ASSIGNMENT (TOP VIEW) 100-PIN TQFP, 3-CHIP ENABLE, S VERSION SA NC NC VDDQ VSS NC DQPa DQa DQa VSS VDDQ DQa DQa VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa NC NC VSS VDDQ NC NC NC SA SA ADV# ADSP# ADSC# OE# BWE# GW# CLK VSS VDD CE2# BWa# BWb# NC NC CE2 CE# SA SA 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 81 49 82 48 83 47 84 46 85 45 86 44 87 43 88 42 89 41 90 40 91 39 92 38 93 37 94 36 95 35 96 34 97 33 98 32 99 31 100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 x18 SA SA SA SA SA SA SA SA NF VDD VSS DNU DNU SA0 SA1 SA SA SA SA MODE SA SA ADV# ADSP# ADSC# OE# BWE# GW# CLK VSS VDD CE2# BWa# BWb# BWc# BWd# CE2 CE# SA SA 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 81 49 82 48 83 47 84 46 85 45 86 44 87 43 88 42 89 41 90 40 91 39 92 38 93 37 94 36 95 35 96 34 97 33 98 32 99 31 100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 NF/DQPb* DQb DQb VDDQ VSS DQb DQb DQb DQb VSS VDDQ DQb DQb VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa DQa DQa VSS VDDQ DQa DQa NF/DQPa* NC NC NC VDDQ VSS NC NC DQb DQb VSS VDDQ DQb DQb VDD VDD NC VSS DQb DQb VDDQ VSS DQb DQb DQPb NC VSS VDDQ NC NC NC x32/x36 SA SA SA SA SA SA SA SA NF VDD VSS DNU DNU SA0 SA1 SA SA SA SA MODE *No Function (NF) is used on the x32 version. Parity (DQPx) is used on the x36 version. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 NF/DQPc* DQc DQc VDDQ VSS DQc DQc DQc DQc VSS VDDQ DQc DQc VDD VDD NC VSS DQd DQd VDDQ VSS DQd DQd DQd DQd VSS VDDQ DQd DQd NF/DQPd* 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM TQFP PIN DESCRIPTIONS x18 x32/x36 SYMBOL SA0 SA1 SA TYPE Input DESCRIPTION Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the rising edge of CLK. Two different pinouts are available for the TQFP package. 37 37 36 36 32-35, 44-50, 32-35, 44-50, 80-82, 99, 81, 82, 99, 100 100 92 (T Version) 92 (T Version) 43 (S Version) 43 (S Version) 93 94 – – 93 94 95 96 BWa# BWb# BWc# BWd# Input Synchronous Byte Write Enables: These active LOW inputs allow individual bytes to be written and must meet the setup and hold times around the rising edge of CLK. A byte write enable is LOW for a WRITE cycle and HIGH for a READ cycle. For the x18 version, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb. For the x32 and x36 versions, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins and DQPc; BWd# controls DQd pins and DQPd. Parity is only available on the x18 and x36 versions. Byte Write Enable: This active LOW input permits BYTE WRITE operations and must meet the setup and hold times around the rising edge of CLK. Global Write: This active LOW input allows a full 18-, 32- or 36-bit WRITE to occur independent of the BWE# and BWx# lines and must meet the setup and hold times around the rising edge of CLK. Clock: This signal registers the address, data, chip enable, byte write enables and burst control inputs on its rising edge. All synchronous inputs must meet setup and hold times around the clock’s rising edge. Synchronous Chip Enable: This active LOW input is used to enable the device and conditions the internal use of ADSP#. CE# is sampled only when a new external address is loaded. Synchronous Chip Enable: This active LOW input is used to enable the device and is sampled only when a new external address is loaded. CE2# is only available on the S version. Snooze Enable: This active HIGH, asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. When ZZ is active, all other inputs are ignored. Synchronous Chip Enable: This active HIGH input is used to enable the device and is sampled only when a new external address is loaded. Output Enable: This active LOW, asynchronous input enables the data I/O output drivers. Synchronous Address Advance: This active LOW input is used to advance the internal burst counter, controlling burst access after the external address is loaded. A HIGH on this pin effectively causes wait states to be generated (no address advance). To ensure use of correct address during a WRITE cycle, ADV# must be HIGH at the rising edge of the first clock after an ADSP# cycle is initiated. 87 87 BWE# Input 88 88 GW# Input 89 89 CLK Input 98 98 CE# Input 92 (S Version) 64 92 (S Version) 64 CE2# Input ZZ Input 97 97 CE2 Input 86 83 86 83 OE# ADV# Input Input (continued on next page) 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM TQFP PIN DESCRIPTIONS (continued) x18 84 x32/x36 84 SYMBOL ADSP# TYPE Input DESCRIPTION Synchronous Address Status Processor: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ is performed using the new address, independent of the byte write enables and ADSC#, but dependent upon CE#, CE2 and CE2#. ADSP# is ignored if CE# is HIGH. Power-down state is entered if CE2 is LOW or CE2# is HIGH. Synchronous Address Status Controller: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ or WRITE is performed using the new address if CE# is LOW. ADSC# is also used to place the chip into power-down state when CE# is HIGH. Mode: This input selects the burst sequence. A LOW on this pin selects “linear burst.” NC or HIGH on this pin selects “interleaved burst.” Do not alter input state while device is operating. 85 85 ADSC# Input 31 31 MODE Input (a) 58, 59, (a) 52, 53, 62, 63, 68, 69, 56-59, 62, 63 72, 73 (b) 8, 9, 12, (b) 68, 69 13, 18, 19, 22, 72-75, 78, 79 23 (c) 2, 3, 6-9, 12, 13 (d) 18, 19, 22-25, 28, 29 74 24 – – 51 80 1 30 DQa DQb Input/ SRAM Data I/Os: For the x18 version, Byte “a” is DQa pins; Byte “b” Output is DQb pins. For the x32 and x36 versions, Byte “a” is DQa pins; Byte “b” is DQb pins; Byte “c” is DQc pins; Byte “d” is DQd pins. Input data must meet setup and hold times around the rising edge of CLK. DQc DQd NF/DQPa NF/DQPb NF/DQPc NF/DQPd VDD VDDQ VSS NF / I/O No Function/Parity Data I/Os: On the x32 version, these pins are No Function (NF). On the x18 version, Byte “a” parity is DQPa; Byte “b” parity is DQPb. On the x36 version, Byte “a” parity is DQPa; Byte “b” parity is DQPb; Byte “c” parity is DQPc; Byte “d” parity is DQPd. 14, 15, 41, 65, 14, 15, 41, 65, 91 91 4, 11, 20, 27, 4, 11, 20, 27, 54, 61, 70, 77 54, 61, 70, 77 5, 10, 17, 21, 5, 10, 17, 21, 26, 40, 55, 60, 26, 40, 55, 60, 67, 71, 76, 90 67, 71, 76, 90 38, 39 1-3, 6, 7, 16, 25, 28-30, 51-53, 56, 57, 66, 75, 78, 79, 95, 96 38, 39 16, 66 Supply Power Supply: See DC Electrical Characteristics and Operating Conditions for range. Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for range. Supply Ground: GND. DNU NC – – Do Not Use: These signals may either be unconnected or wired to GND to improve package heat dissipation. No Connect: These signals are not internally connected and may be connected to ground to improve package heat dissipation. 42 42 43 (T Version) 43 (T Version) NF – No Function: These pins are internally connected to the die and have the capacitance of an input pin. It is allowable to leave these pins unconnected or driven by signals. On the S version, pin 42 is reserved as an address upgrade pin for the 18Mb SyncBurst SRAM. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM PIN LAYOUT (TOP VIEW) 165-PIN FBGA x18 1 2 3 4 5 6 7 8 9 10 11 1 2 3 4 x32/x36 5 6 7 8 9 10 11 A NC B NC C NC D NC E NC F NC G NC H VDD J DQb K DQb L DQb M DQb N NF/DQPb P NC R MODE (LBO#) NC SA SA DNU SA0 DNU SA SA SA SA NC SA SA DNU SA1 DNU SA SA SA SA NC VDDQ VSS NC NC VSS VSS VDDQ NC NC NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC VSS NC VDD VSS VSS VSS VDD NC NC ZZ DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa NC VDDQ VSS VSS VSS VSS VSS VDDQ NC NF/DQPa SA CE2 NC BWa# CLK GW# OE# (G#) ADSP# SA NC SA CE# BWb# NC CE2# BWE# ADSC# ADV# SA SA A A NC SA CE# BWc# BWb# CE2# BWE# ADSC# ADV# SA NC A B B NC SA CE2 BWd# BWa# CLK GW# OE# (G#) ADSP# SA NC B C C NF/DQPc C NC VDDQ VSS VSS VSS VSS VSS VDDQ NC NF/DQPb D D DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb D E E DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb E F F DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb F G G DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb G H H VDD VSS NC VDD VSS VSS VSS VDD NC NC ZZ H J J DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa J K K DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa K L L DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa L M M DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa M N N NF/DQPd N NC VDDQ VSS NC NC VSS VSS VDDQ NC NF/DQPa P P NC NC SA SA DNU SA1 DNU SA SA SA SA P R R MODE (LBO#) NC SA SA DNU SA0 DNU SA SA SA SA R TOP VIEW TOP VIEW *No Function (NF) is used on the x32 version. Parity (DQPx) is used on the x36 version. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM FBGA PIN DESCRIPTIONS x18 x32/x36 SYMBOL SA0 SA1 SA TYPE Input DESCRIPTION Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the rising edge of CLK. 6R 6R 6P 6P 2A, 2B, 3P, 2A, 2B, 3P, 3R, 4P, 4R, 3R, 4P, 4R, 8P, 8R, 9P, 9R, 8P, 8R, 9P, 10A, 10B, 10P, 9R, 10A, 10B, 10R, 11A, 11P, 10P, 10R, 11P, 11R 11R 5B 4A – – 5B 5A 4A 4B BWa# BWb# BWc# BWd# Input Synchronous Byte Write Enables: These active LOW inputs allow individual bytes to be written and must meet the setup and hold times around the rising edge of CLK. A byte write enable is LOW for a WRITE cycle and HIGH for a READ cycle. For the x18 version, BWa# controls DQa’s and DQPa; BWb# controls DQb’s and DQPb. For the x32 and x36 versions, BWa# controls DQa’s and DQPa; BWb# controls DQb’s and DQPb; BWc# controls DQc’s and DQPc; BWd# controls DQd’s and DQPd. Parity is only available on the x18 and x36 versions. Byte Write Enable: This active LOW input permits BYTE WRITE operations and must meet the setup and hold times around the rising edge of CLK. Global Write: This active LOW input allows a full 18-, 32- or 36-bit WRITE to occur independent of the BWE# and BWx# lines and must meet the setup and hold times around the rising edge of CLK. Clock: This signal registers the address, data, chip enable, byte write enables, and burst control inputs on its rising edge. All synchronous inputs must meet setup and hold times around the clock’s rising edge. Synchronous Chip Enable: This active LOW input is used to enable the device and conditions the internal use of ADSP#. CE# is sampled only when a new external address is loaded. Synchronous Chip Enable: This active LOW input is used to enable the device and is sampled only when a new external address is loaded. Snooze Enable: This active HIGH, asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. When ZZ is active, all other inputs are ignored. Synchronous Chip Enable: This active HIGH input is used to enable the device and is sampled only when a new external address is loaded. Output Enable: This active LOW, asynchronous input enables the data I/O output drivers. 7A 7A BWE# Input 7B 7B GW# Input 6B 6B CLK Input 3A 3A CE# Input 6A 6A CE2# Input 11H 11H ZZ Input 3B 3B CE2 Input 8B 8B OE#(G#) Input (continued on next page) 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM FBGA PIN DESCRIPTIONS (continued) x18 9A x32/x36 9A SYMBOL ADV# TYPE Input DESCRIPTION Synchronous Address Advance: This active LOW input is used to advance the internal burst counter, controlling burst access after the external address is loaded. A HIGH on ADV# effectively causes wait states to be generated (no address advance). To ensure use of correct address during a WRITE cycle, ADV# must be HIGH at the rising edge of the first clock after an ADSP# cycle is initiated. Synchronous Address Status Processor: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ is performed using the new address, independent of the byte write enables and ADSC#, but dependent upon CE#, CE2 and CE2#. ADSP# is ignored if CE# is HIGH. Powerdown state is entered if CE2 is LOW or CE2# is HIGH. Synchronous Address Status Controller: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ or WRITE is performed using the new address if CE# is LOW. ADSC# is also used to place the chip into power-down state when CE# is HIGH. Mode: This input selects the burst sequence. A LOW on this input selects “linear burst.” NC or HIGH on this input selects “interleaved burst.” Do not alter input state while device is operating. 9B 9B ADSP# Input 8A 8A ADSC# Input 1R 1R MODE (LB0#) DQa Input (a) 10J, 10K, (a) 10J, 10K, 10L, 10M, 11D, 10L, 10M, 11J, 11E, 11F, 11G 11K, 11L, 11M (b) 1J, 1K, (b) 10D, 10E, 1L, 1M, 2D, 10F, 10G, 11D, 2E, 2F, 2G 11E, 11F, 11G (c) 1D, 1E, 1F, 1G, 2D, 2E, 2F, 2G (d) 1J, 1K, 1L, 1M, 2J, 2K, 2L, 2M 11C 1N – – 11N 11C 1C 1N DQb Input/ SRAM Data I/Os: For the x18 version, Byte “a” is associated DQa’s; Output Byte “b” is associated with DQb’s. For the x32 and x36 versions, Byte “a” is associated with DQa’s; Byte “b” is associated with DQb's; Byte “c” is associated with DQc’s; Byte “d” is associated with DQd’s. Input data must meet setup and hold times around the rising edge of CLK. DQc DQd NF/DQPa NF/DQPb NF/DQPc NF/DQPd VDD NF/ I/O No Function/Parity Data I/Os: On the x32 version, these are No Function (NF). On the x18 version, Byte “a” parity is DQPa; Byte “b” parity is DQPb. On the x36 version, Byte “a” parity is DQPa; Byte “b” parity is DQPb; Byte “c” parity is DQPc; Byte “d” parity is DQPd. 1H, 4D, 4E, 4F, 1H, 4D, 4E, 4F, 4G, 4H, 4J, 4G, 4H, 4J, 4K, 4L, 4M, 4K, 4L, 4M, 8D, 8E, 8F, 8D, 8E, 8F, 8G, 8H, 8J, 8G, 8H, 8J, 8K, 8L, 8M 8K, 8L, 8M Supply Power Supply: See DC Electrical Characteristics and Operating Conditions for range. (continued on next page) 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM FBGA PIN DESCRIPTIONS (continued) x18 3C, 3D, 3E, 3F, 3G, 3J, 3K, 3L, 3M, 3N, 9C, 9D, 9E, 9F, 9G, 9J, 9K, 9L, 9M, 9N x32/x36 3C, 3D, 3E, 3F, 3G, 3J, 3K, 3L, 3M, 3N, 9C, 9D, 9E, 9F, 9G, 9J, 9K, 9L, 9M, 9N SYMBOL VDDQ TYPE DESCRIPTION Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for range. 2H, 4C, 4N, 5C, 2H, 4C, 4N, 5C, 5D, 5E 5F, 5D, 5E 5F, 5G, 5H, 5J, 5G, 5H, 5J, 5K, 5L, 5M, 5K, 5L, 5M, 6C, 6D, 6E, 6F, 6C, 6D, 6E, 6F, 6G, 6H, 6J, 6G, 6H, 6J, 6K, 6L, 6M, 6K, 6L, 6M, 7C, 7D, 7E, 7C, 7D, 7E, 7F, 7G, 7H, 7F, 7G, 7H, 7J, 7K, 7L, 7J, 7K, 7L, 7M, 7N, 8C, 8N 7M, 7N, 8C, 8N 5P, 5R, 7P, 7R 5P, 5R, 7P, 7R 1A, 1B, 1C, 1A, 1B, 1P, 1D, 1E, 1F, 2C, 2N, 1G, 1P, 2C, 2P, 2R, 3H, 2J, 2K, 2L, 5N, 6N, 9H, 2M, 2N, 2P, 10C, 10H, 2R, 3H, 4B, 10N, 11A, 5A, 5N, 6N, 11B 9H, 10C, 10D, 10E, 10F, 10G, 10H, 10N, 11B, 11J, 11K, 11L, 11M, 11N VSS Supply Ground: GND. DNU NC – – Do Not Use: These signals may either be unconnected or wired to GND to improve package heat dissipation. No Connect: These signals are not internally connected and may be connected to ground to improve package heat dissipation. Pin 6N reserved for address pin expansion; 18Mb. NF — No Function: These pins are internally connected to the die and have the capacitance of an input pin. It is allowable to leave these pins unconnected or driven by signals. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH) FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL) X...X00 X...X01 X...X10 X...X11 X...X01 X...X00 X...X11 X...X10 X...X10 X...X11 X...X00 X...X01 X...X11 X...X10 X...X01 X...X00 LINEAR BURST ADDRESS TABLE (MODE = LOW) FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL) X...X00 X...X01 X...X10 X...X11 X...X01 X...X10 X...X11 X...X00 X...X10 X...X11 X...X00 X...X01 X...X11 X...X00 X...X01 X...X10 PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x18) FUNCTION READ READ WRITE Byte “a” WRITE Byte “b” WRITE All Bytes WRITE All Bytes GW# H H H H H L BWE# H L L L L X BWa# X H L H L X BWb# X H H L L X PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x32/x36) FUNCTION READ READ WRITE Byte “a” WRITE All Bytes WRITE All Bytes GW# H H H H L BWE# H L L L X BWa# X H L L X BWb# X H H L X BWc# X H H L X BWd# X H H L X NOTE: Using BWE# and BWa# through BWd#, any one or more bytes may be written. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM TRUTH TABLE OPERATION ADDRESS CE# CE2# CE2 USED Deselected Cycle, Power-Down None H X X Deselected Cycle, Power-Down None L X L Deselected Cycle, Power-Down None L H X Deselected Cycle, Power-Down Deselected Cycle, Power-Down SNOOZE MODE, Power-Down READ Cycle, Begin Burst READ Cycle, Begin Burst WRITE Cycle, Begin Burst READ Cycle, Begin Burst READ Cycle, Begin Burst READ Cycle, Continue Burst READ Cycle, Continue Burst READ Cycle, Continue Burst READ Cycle, Continue Burst WRITE Cycle, Continue Burst WRITE Cycle, Continue Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst WRITE Cycle, Suspend Burst WRITE Cycle, Suspend Burst None None None External External External External External Next Next Next Next Next Next Current Current Current Current Current Current L L X L L L L L X X H H X H X X H H X H X H X L L L L L X X X X X X X X X X X X L X X H H H H H X X X X X X X X X X X X ZZ ADSP# ADSC# ADV# WRITE# OE# L L L L L H L L L L L L L L L L L L L L L L L X L L H H X L L H H H H H X X H X H H X X H X L X X L L X X X L L L H H H H H H H H H H H H X X X X X X X X X X X L L L L L L H H H H H H X X X X X X X X L H H H H H H L L H H H H L L X X X X X X L H X L H L H L H X X L H L H X X CLK L-H L-H L-H L-H L-H X L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H DQ High-Z High-Z High-Z High-Z High-Z High-Z Q High-Z D Q High-Z Q High-Z Q High-Z D D Q High-Z Q High-Z D D NOTE: 1. X means “Don’t Care.” # means active LOW. H means logic HIGH. L means logic LOW. 2. For WRITE#, L means any one or more byte write enable signals (BWa#, BWb#, BWc# or BWd#) and BWE# are LOW or GW# is LOW. WRITE# = H for all BWx#, BWE#, GW# HIGH. 3. BWa# enables WRITEs to DQa’s and DQPa. BWb# enables WRITEs to DQb’s and DQPb. BWc# enables WRITEs to DQc’s and DQPc. BWd# enables WRITEs to DQd’s and DQPd. DQPa and DQPb are only available on the x18 and x36 versions. DQPc and DQPd are only available on the x36 version. 4. All inputs except OE# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK. 5. Wait states are inserted by suspending burst. 6. For a WRITE operation following a READ operation, OE# must be HIGH before the input data setup time and held HIGH throughout the input data hold time. 7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up. 8. ADSP# LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write enable signals and BWE# LOW or GW# LOW for the subsequent L-H edge of CLK. Refer to WRITE timing diagram for clarification. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM ABSOLUTE MAXIMUM RATINGS* Voltage on VDD Supply Relative to VSS .............................. -0.5V to +4.6V Voltage on VDDQ Supply Relative to VSS .............................. -0.5V to +4.6V VIN (DQx) .................................. -0.5V to VDDQ + 0.5V VIN (inputs) ................................... -0.5V to VDD + 0.5V Storage Temperature (plastic) ............ -55°C to +150°C Storage Temperature (FBGA) ............. -55°C to +125°C Junction Temperature** ................................... +150°C Short Circuit Output Current .......................... 100mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Maximum junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See Micron Technical Note TN-0514 for more information. 3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (0°C ≤ TA ≤ +70°C; VDD, VDDQ = +3.3V +0.3V/-0.165V unless otherwise noted) DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Supply Voltage Isolated Output Buffer Supply CONDITIONS SYMBOL VIH VIL ILI ILO VOH VOL VDD VDDQ MIN 2.0 -0.3 -1.0 -1.0 2.4 – 3.135 3.135 MAX VDD + 0.3 0.8 1.0 1.0 – 0.4 3.6 3.6 UNITS V V µA µA V V V V NOTES 1, 2 1, 2 3 0V ≤ VIN ≤ VDD Output(s) disabled, 0V ≤ VIN ≤ VDD IOH = -4.0mA IOL = 8.0mA 1, 4 1, 4 1 1, 5 NOTE: 1. All voltages referenced to VSS (GND). 2. Overshoot: VIH ≤ +4.6V for t ≤ tKC/2 for I ≤ 20mA Undershoot: VIL ≥ -0.7V for t ≤ tKC/2 for I ≤ 20mA Power-up: VIH ≤ +3.6V and VDD ≤ 3.135V for t ≤ 200ms 3. MODE has an internal pull-up, and input leakage = ±10µA. 4. The load used for VOH, VOL testing is shown in Figure 2 for 3.3V I/O. AC load current is higher than the shown DC values. AC I/O curves are available upon request. 5. VDDQ should never exceed VDD. VDD and VDDQ can be connected together. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (0°C ≤ TA ≤ 70°C; VDD = +3.3V +0.3V/-0.165V; VDDQ = +2.5V +0.4V/-0.125V unless otherwise noted) DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Supply Voltage Isolated Output Buffer Supply CONDITIONS Data bus (DQx) Inputs 0V ≤ VIN ≤ VDD Output(s) disabled, 0V ≤ VIN ≤ VDDQ (DQx) IOH = -2.0mA IOH = -1.0mA IOL = 2.0mA IOL = 1.0mA SYMBOL VIHQ VIH VIL ILI ILO VOH VOH VOL VOL VDD VDDQ MIN 1.7 1.7 -0.3 -1.0 -1.0 1.7 2.0 – – 3.135 2.375 MAX UNITS VDDQ + 0.3 V VDD + 0.3 V 0.7 1.0 1.0 – – 0.7 0.4 3.6 2.9 V µA µA V V V V V V NOTES 1, 2 1, 2 1, 2 3 1, 4 1, 4 1, 4 1, 4 1 1 TQFP CAPACITANCE DESCRIPTION Control Input Capacitance Input/Output Capacitance (DQ) Address Capacitance Clock Capacitance CONDITIONS TA = 25°C; f = 1 MHz; VDD = 3.3V SYMBOL CI CO CA CCK TYP 3 4 3 3 MAX 4 5 3.5 3.5 UNITS pF pF pF pF NOTES 5 5 5 5 FBGA CAPACITANCE DESCRIPTION Address/Control Input Capacitance Output Capacitance (Q) Clock Capacitance TA = 25°C; f = 1 MHz CONDITIONS SYMBOL CI CO CCK TYP 2.5 4 2.5 MAX 3.5 5 3.5 UNITS pF pF pF NOTES 5, 6 5, 6 5, 6 NOTE: 1. All voltages referenced to VSS (GND). 2. Overshoot: VIH ≤ +4.6V for t ≤ tKC/2 for I ≤ 20mA Undershoot: VIL ≥ -0.7V for t ≤ tKC/2 for I ≤ 20mA Power-up: VIH ≤ +3.6V and VDD ≤ 3.135V for t ≤ 200ms 3. MODE has an internal pull-up, and input leakage = ±10µA. 4. The load used for VOH, VOL testing is shown in Figure 4 for 2.5V I/O. AC load current is higher than the shown DC values. AC I/O curves are available upon request. 5. This parameter is sampled. 6. Preliminary package data. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM TQFP THERMAL RESISTANCE DESCRIPTION Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Top of Case) CONDITIONS Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 1-layer SYMBOL θJA θJC TYP 40 8 UNITS NOTES °C/W °C/W 1 1 FBGA THERMAL RESISTANCE DESCRIPTION Junction to Ambient (Airflow of 1m/s) Junction to Case (Top) Junction to Pins (Bottom) CONDITIONS Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. SYMBOL θJA θJC θJB TYP 40 9 17 UNITS NOTES °C/W °C/W °C/W 1, 2 1, 2 1, 2 NOTE: 1. This parameter is sampled. 2. Preliminary package data. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM IDD OPERATING CONDITIONS AND MAXIMUM LIMITS (0°C ≤ TA ≤ +70°C; VDD = +3.3V +0.3V/-0.165V; VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O and +2.5V +0.4V/-0.125V for 2.5V I/O) MAX DESCRIPTION Power Supply Current: Operating Power Supply Current: Idle CONDITIONS Device selected; All inputs ≤ VIL or ≥ VIH; Cycle time ≥ tKC (MIN); VDD = MAX; Outputs open Device selected; VDD = MAX; ADSC#, ADSP#, GW#, BWx#, ADV# ≥ VIH; All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2; Cycle time ≥ tKC (MIN) Device deselected; VDD = MAX; All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2; All inputs static; CLK frequency = 0 Device deselected; VDD = MAX; All inputs ≤ VIL or ≥ VIH; All inputs static; CLK frequency = 0 Device deselected; VDD = MAX; ADSC#, ADSP#, GW#, BWx#, ADV# ≥ VIH; All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2; Cycle time ≥ tKC (MIN) SYMBOL TYP IDD 225 -6 475 -7.5 375 -10 300 UNITS NOTES mA 1, 2, 3 IDD1 55 110 90 85 mA 1, 2, 3 CMOS Standby ISB2 0.4 10 10 10 mA 2, 3 TTL Standby ISB3 8 25 25 25 mA 2, 3 Clock Running ISB4 55 110 90 85 mA 2, 3 NOTE: 1. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and greater output loading. 2. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means device is active (not in power-down mode). 3. Typical values are measured at 3.3V, 25°C and 10ns cycle time. 4. This parameter is sampled. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 18 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 1)(0°C ≤ TA ≤ +70°C; VDD = +3.3V +0.3V/-0.165V) 6 DESCRIPTION Clock Clock cycle time Clock frequency Clock HIGH time Clock LOW time Output Times Clock to output valid Clock to output invalid Clock to output in Low-Z Clock to output in High-Z OE# to output valid OE# to output in Low-Z OE# to output in High-Z Setup Times Address Address status (ADSC#, ADSP#) Address advance (ADV#) Write signals (BWa#-BWd#, BWE#, GW#) Data-in Chip enables (CE#, CE2#, CE2) Hold Times Address Address status (ADSC#, ADSP#) Address advance (ADV#) Write signals (BWa#-BWd#, BWE#, GW#) Data-in Chip enables (CE#, CE2#, CE2) SYMBOL tKC fKF tKH tKL tKQ tKQX tKQLZ tKQHZ tOEQ tOELZ tOEHZ tAS tADSS tAAS tWS tDS tCES tAH tADSH tAAH tWH tDH tCEH -7.5 MAX MIN 7.5 166 133 2.5 2.5 3.5 4.0 1.5 0 3.5 3.5 4.2 4.2 0 3.5 4.2 1.5 1.5 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.5 0.5 .5 2.0 2.0 2.0 2.0 2.0 2.0 0.5 0.5 0.5 0.5 0.5 0.5 0 1.5 1.5 3.0 3.0 MAX MIN 10 -10 MAX UNITS ns MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES MIN 6.0 2.3 2.3 100 2 2 5.0 1.5 0 5.0 5.0 4.5 0 3 3, 4, 5, 6 3, 4, 5, 6 7 3, 4, 5, 6 3, 4, 5, 6 8, 9 8, 9 8, 9 8, 9 8, 9 8, 9 8, 9 8, 9 8, 9 8, 9 8, 9 8, 9 1.5 1.5 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.5 0.5 0.5 NOTE: 1. Test conditions as specified with the output loading shown in Figure 1 for 3.3V I/O (VDDQ = +3.3V +0.3V/-0.165V) and Figure 3 for 2.5V I/O (VDDQ = +2.5V +0.4V/-0.125V) unless otherwise noted. 2. Measured as HIGH above VIH and LOW below VIL. 3. This parameter is measured with output load as shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. 4. This parameter is sampled. 5. Transition is measured ±500mV from steady state voltage. 6. Refer to Technical Note TN-58-09, “Synchronous SRAM Bus Contention Design Considerations,” for a more thorough discussion on these parameters. 7. OE# is a “Don’t Care” when a byte write enable is sampled LOW. 8. A WRITE cycle is defined by at least one byte write enable LOW and ADSP# HIGH for the required setup and hold times. A READ cycle is defined by all byte write enables HIGH and ADSC# or ADV# LOW or ADSP# LOW for the required setup and hold times. 9. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK when either ADSP# or ADSC# is LOW and chip enabled. All other synchronous inputs must meet the setup and hold times with stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at each rising edge of CLK when either ADSP# or ADSC# is LOW to remain enabled. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 19 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 3.3V I/O AC TEST CONDITIONS Input pulse levels .................. VIH = (VDD/2.2) + 1.5V .................... VIL = (VDD/2.2) - 1.5V Input rise and fall times ..................................... 1ns Input timing reference levels ...................... VDD/2.2 Output reference levels ............................ VDDQ/2.2 Output load ............................. See Figures 1 and 2 2.5V I/O AC TEST CONDITIONS Input pulse levels .............. VIH = (VDD/2.64) + 1.25V ................ VIL = (VDD/2.64) - 1.25V Input rise and fall times ..................................... 1ns Input timing reference levels ................... VDD/2.64 Output reference levels ............................... VDDQ/2 Output load ............................. See Figures 3 and 4 Q Z O= 50 50 VT = 1.5V Figure 1 3.3V I/O Output Load Equivalent Q Z O= 50Ω 50Ω VT = 1.25V Figure 3 2.5V I/O Output Load Equivalent +3.3V 317 Q +2.5V 225Ω Q 351 5pF 225Ω 5pF Figure 2 3.3V I/O Output Load Equivalent Figure 4 2.5V I/O Output Load Equivalent LOAD DERATING CURVES Micron 512K x 18, 256K x 32, and 256K x 36 SyncBurst SRAM timing is dependent upon the capacitive loading on the outputs. Consult the factory for copies of I/O current versus voltage curves. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 20 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM SNOOZE MODE SNOOZE MODE is a low-current, “power-down” mode in which the device is deselected and current is reduced to ISB2Z. The duration of SNOOZE MODE is dictated by the length of time ZZ is in a HIGH state. After the device enters SNOOZE MODE, all inputs except ZZ become gated inputs and are ignored. ZZ is an asynchronous, active HIGH input that causes the device to enter SNOOZE MODE. When ZZ becomes a logic HIGH, ISB2Z is guaranteed after the setup time tZZ is met. Any READ or WRITE operation pending when the device enters SNOOZE MODE is not guaranteed to complete successfully. Therefore, SNOOZE MODE must not be initiated until valid pending operations are completed. SNOOZE MODE ELECTRICAL CHARACTERISTICS DESCRIPTION Current during SNOOZE MODE ZZ active to input ignored ZZ inactive to input sampled ZZ active to snooze current ZZ inactive to exit snooze current NOTE: 1. This parameter is sampled. CONDITIONS ZZ ≥ VIH SYMBOL ISB2Z tZZ tRZZ tZZI tRZZI MIN MAX 10 2(tKC) UNITS mA ns ns ns ns NOTES 1 1 1 1 2(tKC) 2(tKC) 0 SNOOZE MODE WAVEFORM CLK t ZZ t RZZ ZZ t ZZI I SUPPLY I ISB2Z t RZZI DESELECT or READ Only ALL INPUTS (except ZZ) Outputs (Q) High-Z DON’T CARE 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 21 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM READ TIMING 3 t KC CLK tKH tADSS tADSH tKL ADSP# tADSS tADSH ADSC# tAS tAH ADDRESS A1 tWS tWH A2 A3 Burst continued with new base address. GW#, BWE#, BWa#-BWd# tCES tCEH Deselect cycle. CE# (NOTE 2) tAAS tAAH (NOTE 4) ADV# ADV# suspends burst. (NOTE 3) t OEHZ t KQLZ tOEQ t OELZ tKQ tKQX t KQHZ OE# Q High-Z Q(A1) t KQ Q(A2) (NOTE 1) Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) Q(A2 + 1) Single READ BURST READ Burst wraps around to its initial state. DON’T CARE UNDEFINED READ TIMING PARAMETERS -6 SYMBOL tKC fKF tKH tKL tKQ tKQX tKQLZ tKQHZ tOEQ tOELZ tOEHZ -7.5 MAX 166 MIN 7.5 2.5 2.5 3.5 4.0 1.5 0 3.5 3.5 4.2 4.2 0 3.5 4.2 0 1.5 1.5 MAX 133 3.0 3.0 -10 MIN 10 MAX 100 UNITS ns MHz ns ns ns ns ns ns ns ns ns SYMBOL tAS tADSS tAAS tWS tCES tAH tADSH tAAH tWH tCEH -6 MIN 1.5 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.5 0.5 MAX MIN 6.0 2.3 2.3 1.5 0 -7.5 MIN MAX 1.5 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.5 0.5 -10 MIN MAX 2.0 2.0 2.0 2.0 2.0 0.5 0.5 0.5 0.5 0.5 UNITS ns ns ns ns ns ns ns ns ns ns 5.0 5.0 5.0 4.5 0 NOTE: 1. Q(A2) refers to output from address A2. Q(A2 + 1) refers to output from the next internal burst address following A2. 2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE# is HIGH, CE2# is HIGH and CE2 is LOW. 3. Timing is shown assuming that the device was not enabled before entering into this sequence. OE# does not cause Q to be driven until after the following clock rising edge. 4. Outputs are disabled within one clock cycle after deselect. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 22 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM WRITE TIMING t KC CLK tKH tADSS tADSH tKL ADSP# tADSS tADSH ADSC# extends burst. tADSS tADSH ADSC# tAS tAH ADDRESS A1 A2 Byte write signals are ignored for first cycle when ADSP# initiates burst. A3 tWS tWH BWE#, BWa#-BWd# tWS tWH (NOTE 5) GW# tCES tCEH CE# (NOTE 2) ADV# (NOTE 4) OE# (NOTE 3) tDS tDH tAAS tAAH ADV# suspends burst. D High-Z tOEHZ D(A1) D(A2) D(A2 + 1) (NOTE 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) Q BURST READ Single WRITE BURST WRITE Extended BURST WRITE DON’T CARE UNDEFINED WRITE TIMING PARAMETERS -6 SYMBOL tKC fKF tKH tKL tOEHZ tAS tADSS tAAS tWS -7.5 MAX 166 MIN 7.5 2.5 2.5 3.5 4.2 1.5 1.5 1.5 1.5 2.0 2.0 2.0 2.0 MAX 133 3.0 3.0 -10 MIN 10 MAX 100 UNITS ns MHz ns ns ns ns ns ns ns SYMBOL tDS tCES tAH tADSH tAAH tWH tDH tCEH -6 MIN 1.5 1.5 0.5 0.5 0.5 0.5 0.5 0.5 MAX MIN 6.0 2.3 2.3 1.5 1.5 1.5 1.5 -7.5 MIN MAX 1.5 1.5 0.5 0.5 0.5 0.5 0.5 0.5 -10 MIN MAX 2.0 2.0 0.5 0.5 0.5 0.5 0.5 0.5 UNITS ns ns ns ns ns ns ns ns 4.5 NOTE: 1. D(A2) refers to input for address A2. D(A2 + 1) refers to input for the next internal burst address following A2. 2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE# is HIGH, CE2# is HIGH and CE2 is LOW. 3. OE# must be HIGH before the input data setup and held HIGH throughout the data hold time. This prevents input/output data contention for the time period prior to the byte write enable inputs being sampled. 4. ADV# must be HIGH to permit a WRITE to the loaded address. 5. Full-width WRITE can be initiated by GW# LOW; or GW# HIGH and BWE#, BWa# and BWb# LOW for x18 device; or GW# HIGH and BWE#, BWa#-BWd# LOW for x32 and x36 devices. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 23 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM READ/WRITE TIMING 3 tKC CLK tKH tADSS tADSH tKL ADSP# ADSC# tAS tAH ADDRESS BWE#, BWa#-BWd# (NOTE 4) CE# (NOTE 2) ADV# A1 A2 A3 tWS tWH A4 A5 A6 tCES tCEH OE# tKQ tDS tDH tOELZ D High-Z tKQLZ tOEHZ D(A3) (NOTE 1) Q(A4) Single WRITE Q(A4+1) BURST READ Q(A4+2) Q(A4+3) D(A5) D(A6) Q High-Z Q(A1) Back-to-Back READs (NOTE 5) Q(A2) Back-to-Back WRITEs DON’T CARE UNDEFINED READ/WRITE TIMING PARAMETERS -6 SYMBOL tKC fKF tKH tKL tKQ tKQLZ tOELZ tOEHZ tAS MIN 6.0 2.3 2.3 MAX 166 -7.5 MIN MAX 7.5 133 2.5 2.5 -10 MIN MAX 10 100 3.0 3.0 -6 UNITS ns MHz ns ns SYMBOL tADSS tWS tDS tCES tAH tADSH tWH tDH tCEH -7.5 MAX MIN 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.5 0.5 MAX -10 MIN 2.0 2.0 2.0 2.0 0.5 0.5 0.5 0.5 0.5 MAX UNITS ns ns ns ns ns ns ns ns ns MIN 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.5 0.5 3.5 0 0 3.5 1.5 1.5 0 0 4.0 1.5 0 4.2 2.0 5.0 ns ns ns ns ns 4.5 NOTE: 1. Q(A4) refers to output from address A4. Q(A4 + 1) refers to output from the next internal burst address following A4. 2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE# is HIGH, CE2# is HIGH and CE2 is LOW. 3. The data bus (Q) remains in High-Z following a WRITE cycle unless an ADSP#, ADSC# or ADV# cycle is performed. 4. GW# is HIGH. 5. Back-to-back READs may be controlled by either ADSP# or ADSC#. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 24 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 100-PIN PLASTIC TQFP (JEDEC LQFP) PIN #1 ID 0.15 +0.03 -0.02 0.32 +0.06 -0.10 22.10 +0.10 -0.15 0.65 20.10 ±0.10 DETAIL A 0.62 14.00 ±0.10 +0.20 -0.05 GAGE PLANE 1.50 ±0.10 0.10 16.00 0.25 0.10 +0.10 -0.05 1.00 (TYP) 0.60 ±0.15 DETAIL A 1.40 ±0.05 NOTE: 1. All dimensions in millimeters MAX or typical where noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.01" per side. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 25 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 165-PIN FBGA 0.85 ±0.075 0.12 C SEATING PLANE C BALL A11 165X Ø 0.45 SOLDER BALL DIAMETER REFERS TO POST REFLOW CONDITION. THE PRE-REFLOW DIAMETER IS Ø 0.40 10.00 1.00 TYP BALL A1 PIN A1 ID 1.20 MAX PIN A1 ID 7.50 ±0.05 15.00 ±0.10 14.00 7.00 ±0.05 1.00 TYP 6.50 ±0.05 5.00 ±0.05 13.00 ±0.10 MOLD COMPOUND: EPOXY NOVOLAC SUBSTRATE: PLASTIC LAMINATE SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb SOLDER BALL PAD: Ø .33mm NOTE: 1. All dimensions in millimeters MAX or typical where noted. MIN 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc. SyncBurst is a trademark of Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 26 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM REVISION HISTORY Removed “Preliminary Package Data” from front page ........................................................................ February 22/02 Removed -5 speed grade Removed 119-pin PBGA package and references .................................................................................. February 14/02 Removed note "Not Recommended for New Designs," Rev. 6/01 ................................................................. June 7/01 Added industrial temperature references and notes, Rev. 3/01 ................................................................ March 19/01 Changed 16Mb references to 18Mb Changed NC/DQPx to NF/DQPx Added 119-pin PBGA package, Rev. 1/01, FINAL .................................................................................... January 10/01 Removed FBGA Part Marking Guide, Rev. 8/00, FINAL ............................................................................. August 1/00 Added FBGA Part Marking Guide, Rev 7/00 .................................................................................................. July 18/00 Added Revision History Removed 119-Pin PBGA package and references Removed Industrial Temperature references Added 165-pin FBGA Package ....................................................................................................................... June 13/00 8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L512L18P_C.p65 – Rev. 2/02 27 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc.