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NAND256W3A0BZA6E

NAND256W3A0BZA6E

  • 厂商:

    MICRON(镁光)

  • 封装:

    VFBGA55

  • 描述:

    IC FLASH 256MBIT 55VFBGA

  • 数据手册
  • 价格&库存
NAND256W3A0BZA6E 数据手册
Micron Technology, Inc. 8000 S. Federal Way PO Box 6 Boise, ID United States 83707-0006 Product Change Notice Micron PCN: 31020 Date: 10/22/2013 Type of Change: End of Life Title of Change: Specific NAND Flash Part Number Terminations Description of Change: Multiple NAND Flash Part Numbers are being terminated to enable improved supply line efficiency and focus on Microns’ commitment to NAND technology. Production volumes for the impacted Part Numbers are zero or do not justify the continued availability. Reason for Change: Optimization of Manufacturing Efficiency Contact Information: AMERICAS: ARAVIND RAMAMOORTHY ARAMAMO@MICRON.COM EMEA: MAURIZIO BELTRAMELLO MBELTRAM@MICRON.COM ASIA-PACIFIC: JINGWEN YANG JYANG@MICRON.COM JAPAN: DAIGO TOYAMA DTOYAMA@MICRON.COM Product Affected: NAND Flash Affected Part Number NAND128W3A0BN6E Replacement Part Number NAND128W3A0BN6F Key Difference Packing change from Try to Tape & Reel NAND128W3AABN6E NAND128W3AABN6F Packing change from Try to Tape & Reel NAND256W3A0BE06 None Contact Micron representative NAND256W3A0BN6E NAND256W3A0BN6F Packing change from Try to Tape & Reel NAND256W3A0BZA6E NAND256W3A2BZA6E Chip Enables from CE care to CE don’t care NAND256W3A2BE06 None Contact Micron representative NAND512R3A2SE06 None Contact Micron representative NAND512R3A2SN6E None Contact Micron representative NAND512R3A2SN6F None Contact Micron representative NAND512R3A2SZA6F NAND512R3A2SZA6E Change packing from Tape and Reel to Try NAND512W3A2SE06 None Contact Micron representative MT29F1G08ABADAH4-E:D MT29F1G08ABADAH4-ITE:D Temperature range from Commercial to Industrial MT29F1G08ABADAWP-ITE:D MT29F1G08ABADAWP-IT:D On-Die ECC must be enabled by user MT29F1G08ABBDAH4-ITE:D MT29F1G08ABBDAH4-IT:D NAND Line Item reduction update MT29F1G16ABBDAHC:D MT29F1G16ABBDAHC-IT:D Temperature range from commercial to industrial MT29F1G16ABBDAM68A3WC1 MT29F1G16ABBEAM68M3WC1 On-Die ECC not supported MT29F2G08ABAEAH4-ITE:E MT29F2G08ABAEAH4-IT:E NAND Line Item reduction update MT29F16G08AJADAWP:D MT29F16G08AJADAWP-IT:D Temperature range from commercial to industrial MT29F4G08ABADAH4-E:D MT29F4G08ABADAH4-ITE:D Temperature range from commercial to industrial MT29F4G08ABBDAH4-ITE:D MT29F4G08ABBDAH4-IT:D NAND Line Item reduction update MT29F4G16ABADAM60A3WC1 MT29F4G16ABAEAM70M3WC1 Litho change from 34nm to 25nm Note: Per JEDEC Standard JESD46-C Section 3.2.3; lack of acknowledgment of this PCN within 30 days constitutes acceptance of change 1 of 2 Micron Confidential and Proprietary Information Affected Part Number MT29F8G08ADADAH4:D Replacement Part Number MT29F8G08ADADAH4-IT:D Key Difference Temperature range from commercial to industrial MT29F8G16ADBDAH4:D MT29F8G16ADBDAH4-IT:D Temperature range from commercial to industrial MT29F16G08AFABAWP:B MT29F16G08ABACAWP-Z:C Litho change from 34nm to 25nm MT29F16G08AFABAWP-IT:B MT29F16G08ABACAWP-ITZ:C Litho change from 34nm to 25nm MT29F8G08ABCBBH1-12:B MT29F8G08ABACAH4:C From BGA100 to BGA63 package MT29F8G08ABCBBH1-12IT:B MT29F8G08ABACAH4-IT:C From BGA100 to BGA63 package Method of Identification: By Part Numbers Micron Sites Affected: All Sites Last Buy Date: 22-Apr-2014 Last Ship Date: 22-Oct-2014 Orders placed prior to the LTB date are subject to current inventory levels, which may vary based on market conditions and customer demand. Early orders are encouraged. Note: Per JEDEC Standard JESD46-C Section 3.2.3; lack of acknowledgment of this PCN within 30 days constitutes acceptance of change 2 of 2 Micron Confidential and Proprietary Information
NAND256W3A0BZA6E 价格&库存

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