NAND512R3A2CZA6E

NAND512R3A2C NAND512R4A2C NAND512W3A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications ● NAND interface – x8 or x16 bus width – Multiplexed address/ data ● TSOP48 12 x 20 mm (N) Supply voltage: 1.8 V, 3 V ● Page size – x8 device: (512 + 16 spare) bytes – x16 device: (256 + 8 spare) words ● Block size – x8 device: (16K + 512 spare) bytes – x16 device: (8K + 256 spare) words ● Page read/program – Random access: 12 µs (3 V)/15 µs (1.8 V) (max) – Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min) – Page program time: 200 µs (typ) FBGA VFBGA55 8 x 10 x 1.05 mm (ZD) VFBGA63 9 x 11 x 1.05 mm (ZA) – Serial number (unique ID) option ● Hardware data protection – Program/erase locked during power transitions ● Data integrity – 100,000 program/erase cycles (with ECC) – 10 years data retention ● Copy back program mode ● Fast block erase: 2 ms (typ) ● ● Status register ● ● Electronic signature ● Chip Enable ‘don’t care’ ● Security features – OTP area Table 1. RoHS compliant packages Development tools – Error correction code models – Bad blocks management and wear leveling algorithms – Hardware simulation models Device summary Reference Root part number NAND512R3A2C NAND512R4A2C NAND512-A2C NAND512W3A2C June 2009 Rev 5 This is information on a product still in production but not recommended for new designs. 1/55 www.numonyx.com 1 Contents NAND512-A2C Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4 3.1 Inputs/outputs (I/O0-I/O7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.2 Inputs/outputs (I/O8-I/O15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.3 Address Latch Enable (AL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.4 Command Latch Enable (CL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.5 Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.6 Read Enable (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.7 Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.8 Write Protect (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.9 Ready/Busy (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.10 VDD supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.11 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.1 Command input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.2 Address input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.3 Data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4 Data output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.5 Write protect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.6 Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 Command set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Device operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/55 6.1 Pointer operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6.2 Read memory array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6.2.1 Random read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6.2.2 Page read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6.2.3 Sequential row read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 NAND512-A2C 6.3 Page program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 6.4 Copy back program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 6.5 Block erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 6.6 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 6.7 Read status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6.8 7 Contents 6.7.1 Write protection bit (SR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6.7.2 P/E/R controller bit (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6.7.3 Error bit (SR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6.7.4 SR5, SR4, SR3, SR2 and SR1 are reserved . . . . . . . . . . . . . . . . . . . . . 28 Read electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Software algorithms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 7.1 Bad block management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 7.2 NAND flash memory failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 7.3 Garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 7.4 Wear-leveling algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 7.5 Error correction code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 7.6 Hardware simulation models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 7.6.1 Behavioral simulation models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 7.6.2 IBIS simulations models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 8 Program and erase times and endurance cycles . . . . . . . . . . . . . . . . . 34 9 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 10 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 10.1 Ready/Busy signal electrical characteristics . . . . . . . . . . . . . . . . . . . . . . 46 10.2 Data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 11 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 12 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 3/55 List of tables NAND512-A2C List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. 4/55 Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Valid blocks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Address insertion, x8 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Address insertion, x16 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Address definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Copy back program addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Status register bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 NAND flash failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Program, erase times and program erase endurance cycles . . . . . . . . . . . . . . . . . . . . . . . 34 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 DC characteristics, 1.8 V devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 DC characteristics, 3 V devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 AC characteristics for command, address, data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 AC characteristics for operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, mechanical data . . . . . . . . . . . . 49 VFBGA55 8 x 10 x 1.05 mm - 6 x 8 +7 active ball array, 0.8 mm pitch, mechanical data . 51 VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15 active ball array, 0.8 mm pitch, mechanical data 52 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 NAND512-A2C List of figures List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Logic block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 TSOP48 connections - x8 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 VFBGA55 connections - x8 devices (top view through package) . . . . . . . . . . . . . . . . . . . . 10 VFBGA63 connections - x8 devices (top view through package) . . . . . . . . . . . . . . . . . . . . 11 Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Pointer operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Pointer operations for programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Read (A,B,C) operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Sequential row read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Sequential row read block diagrams. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Read block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Page program operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Copy back operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Block erase operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Bad block management flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Error detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Equivalent testing circuit for AC characteristics measurement . . . . . . . . . . . . . . . . . . . . . . 36 Command Latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Address Latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Data Input Latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Sequential data output after read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Read status register AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Read electronic signature AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Page read A/read B operation AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Read C operation, one page AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Page program AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Block erase AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Reset AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Program/erase enable waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Program/erase disable waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Ready/Busy AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Ready/Busy load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Resistor value versus waveform timings for Ready/Busy signal. . . . . . . . . . . . . . . . . . . . . 48 Data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, package outline . . . . . . . . . . . . 49 VFBGA55 8 x 10 x 1.05 mm - 6 x 8 +7 active ball array, 0.8 mm pitch, package outline . . 50 VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15, 0.8 mm pitch, package outline . . . . . . . . . . . . . . 52 5/55 Description 1 NAND512-A2C Description The NAND flash 528-byte/ 264-word page is a family of non-volatile flash memories that uses the single level cell (SLC) NAND technology. It is referred to as the small page family. The NAND512R3A2C, NAND512R4A2C, and NAND512W3A2C have a density of 512 Mbits and operate with either a 1.8 V or 3 V voltage supply. The size of a page is either 528 bytes (512 + 16 spare) or 264 words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or x16 input/output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. To extend the lifetime of NAND flash devices it is strongly recommended to implement an error correction code (ECC). The use of ECC correction allows to achieve up to 100,000 program/erase cycles for each block. A write protect pin is available to give a hardware protection against program and erase operations. The devices feature an open-drain Ready/Busy output that can be used to identify if the program/erase/read (P/E/R) controller is currently active. The use of an open-drain output allows the ready/busy pins from several memories to be connected to a single pull-up resistor. A Copy Back command is available to optimize the management of defective blocks. When a page program operation fails, the data can be programmed in another page without having to resend the data to be programmed. The devices are available in the TSOP48 (12 x 20 mm), VFBGA55 (8 x 10 x 1.05 mm) and VFBGA63 (9 x 11 x 1.05 mm) packages and in two different versions: ● No option (Chip Enable ‘care’, sequential row read enabled): the sequential row read feature allows to download up to all the pages in a block with one read command and addressing only the first page to read ● With Chip Enable ‘don’t care’ feature. This enables the sharing of the bus between more active memories that are simultaneously active as Chip Enable transitions during latency do not stop read operations. Program and erase operations are not interrupted by Chip Enable transitions. They also come with the following security features: ● OTP (one time programmable) area, which is a restricted access area where sensitive data/code can be stored permanently. The access sequence and further details about this feature are subject to an NDA (non disclosure agreement) ● Serial number (unique identifier) option, which enables each device to be uniquely identified. It is subject to an NDA and is, therefore, not described in the datasheet. For more details about these security features, contact your nearest Numonyx sales office. For information on how to order these devices refer to Table 25: Ordering information scheme. Devices are shipped from the factory with block 0 always valid and the memory content bits, in valid blocks, erased to ’1’. See Table 2: Product description, for all the devices available in the family. 6/55 NAND512-A2C Table 2. Description Product description Timings Reference Part number Density Bus width Page size Block size x8 512+16 bytes 16K+512 bytes NAND512R3A2C NAND512-A2C NAND512W3A2C 512 Mbits NAND512R4A2C Figure 1. 256+8 words x16 8K+256 words Memory array Operating voltage 32 pages x 4096 blocks Random access Max Sequential access Min 1.7 to 1.95 V 15 µs 50 ns 2.7 to 3.6 V 12 µs 30 ns 1.7 to 1.95 V 15 µs 50 ns Page program Typ Block erase Typ 200 µs 2 ms Package TSOP48 VFBGA55 VFBGA63 Logic diagram VDD 8 E I/O8-I/O15, x16 I/O0-I/O7, x8/x16 R W NAND flash RB AL CL WP VSS AI07557C 7/55 Description Table 3. NAND512-A2C Signal names Signal Function Direction I/O8-15 Data input/outputs for x16 devices I/O I/O0-7 Data input/outputs, address inputs, or command inputs for x8 and x16 devices I/O AL Address Latch Enable Input CL Command Latch Enable Input E Chip Enable Input R Read Enable Input RB Ready/Busy (open-drain output) W Write Enable Input WP Write Protect Input VDD Supply voltage VSS Ground NC Not connected internally – DU Do not use – Figure 2. Output Power supply Ground Logic block diagram AL CL W E WP R Command interface logic P/E/R controller, high voltage generator X decoder Address register/counter NAND flash memory array Page buffer Y decoder Command register I/O buffers & latches RB I/O0-I/O7, x8/x16 I/O8-I/O15, x16 AI07561c 8/55 NAND512-A2C Figure 3. Description TSOP48 connections - x8 devices NC NC NC NC NC NC RB R E NC NC VDD VSS NC NC CL AL W WP NC NC NC NC NC 1 12 13 24 48 NAND flash (x8) 37 36 25 NC NC NC NC I/O7 I/O6 I/O5 I/O4 NC NC NC VDD VSS NC NC NC I/O3 I/O2 I/O1 I/O0 NC NC NC NC AI07585C 9/55 Description Figure 4. NAND512-A2C VFBGA55 connections - x8 devices (top view through package) 1 A 2 3 4 5 6 7 8 DU DU B DU C WP AL VSS E W RB D NC R CL NC NC NC E NC NC NC NC NC NC F NC NC NC NC NC NC G NC NC NC NC NC NC H NC I/O0 NC NC NC VDD J NC I/O1 NC VDD I/O5 I/O7 K VSS I/O2 I/O3 I/O4 I/O6 VSS L DU DU M DU DU AI09366b 10/55 NAND512-A2C Figure 5. Description VFBGA63 connections - x8 devices (top view through package) 1 2 A DU DU B DU 3 4 5 6 7 8 C WP AL VSS E W RB D NC R CL NC NC NC E NC NC NC NC NC NC F NC NC NC NC NC NC G NC NC NC NC NC NC H NC I/O0 NC NC NC VDD J NC I/O1 NC VDD I/O5 I/O7 K VSS I/O2 I/O3 I/O4 I/O6 VSS 9 10 DU DU DU DU L DU DU DU DU M DU DU DU DU AI07586B 11/55 Memory array organization 2 NAND512-A2C Memory array organization The memory array is made up of NAND structures where 16 cells are connected in series. The memory array is organized in blocks where each block contains 32 pages. The array is split into two areas, the main area and the spare area. The main area of the array is used to store data whereas the spare area is typically used to store error correction codes, software flags or bad block identification. In x8 devices the pages are split into a main area with two half pages of 256 bytes each and a spare area of 16 bytes. In the x16 devices the pages are split into a 256-word main area and an 8-word spare area. Refer to Figure 6: Memory array organization. Bad blocks The NAND flash 528-byte/ 264-word page devices may contain bad blocks, that is blocks that contain one or more invalid bits whose reliability is not guaranteed. Additional bad blocks may develop during the lifetime of the device. The bad block information is written prior to shipping (refer to Section 7.1: Bad block management for more details). Table 4 shows the minimum number of valid blocks in each device. The values shown include both the bad blocks that are present when the device is shipped and the Bad Blocks that could develop later on. These blocks need to be managed using bad blocks management, block replacement or error correction codes (refer to Section 7: Software algorithms). Table 4. 12/55 Valid blocks Density of device Min Max 512 Mbits 4016 4096 NAND512-A2C Figure 6. Memory array organization Memory array organization x8 DEVICES x16 DEVICES Block = 32 pages Page = 528 bytes (512+16) Block = 32 pages Page = 264 words (256+8) a re a Sp a are re a Sp 1st half page 2nd half page (256 bytes) (256 bytes) are Main area Block Page Block Page 16 bits 8 bits 512 Bytes 256 words 16 bytes Page buffer, 264 words Page buffer, 512 bytes 512 bytes 16 bytes 8 words 8 bits 256 words 8 words 16 bits AI07587 13/55 Signal descriptions 3 NAND512-A2C Signal descriptions See Figure 1: Logic diagram, and Table 3: Signal names, for a brief overview of the signals connected to this device. 3.1 Inputs/outputs (I/O0-I/O7) Input/outputs 0 to 7 are used to input the selected address, output the data during a read operation or input a command or data during a write operation. The inputs are latched on the rising edge of Write Enable. I/O0-I/O7 are left floating when the device is deselected or the outputs are disabled. 3.2 Inputs/outputs (I/O8-I/O15) Input/outputs 8 to 15 are only available in x16 devices. They are used to output the data during a read operation or input data during a write operation. Command and address inputs only require I/O0 to I/O7. The inputs are latched on the rising edge of Write Enable. I/O8-I/O15 are left floating when the device is deselected or the outputs are disabled. 3.3 Address Latch Enable (AL) The Address Latch Enable activates the latching of the address inputs in the command interface. When AL is High, the inputs are latched on the rising edge of Write Enable. 3.4 Command Latch Enable (CL) The Command Latch Enable activates the latching of the command inputs in the command interface. When CL is High, the inputs are latched on the rising edge of Write Enable. 3.5 Chip Enable (E) The Chip Enable input activates the memory control logic, input buffers, decoders and read circuitry. When Chip Enable is Low, VIL, the device is selected. If Chip Enable goes High (VIH) while the device is busy programming or erasing, the device remains selected and does not go into standby mode. While the device is busy reading: 14/55 ● the Chip Enable input should be held Low during the whole busy time (tBLBH1) for devices that do not feature the Chip Enable don’t care option. Otherwise, the read operation in progress is interrupted and the device goes into standby mode. ● for devices that feature the Chip Enable don’t care option, the Chip Enable going High during the busy time (tBLBH1) will not interrupt the read operation and the device will not go into standby mode. NAND512-A2C 3.6 Signal descriptions Read Enable (R) The Read Enable, R, controls the sequential data output during read operations. Data is valid tRLQV after the falling edge of R. The falling edge of R also increments the internal column address counter by one. 3.7 Write Enable (W) The Write Enable input, W, controls writing to the command interface, input address and data latches. Both addresses and data are latched on the rising edge of Write Enable. During power-up and power-down a recovery time of 10 µs (min) is required before the command interface is ready to accept a command. It is recommended to keep Write Enable High during the recovery time. 3.8 Write Protect (WP) The Write Protect pin is an input that gives a hardware protection against unwanted program or erase operations. When Write Protect is Low, VIL, the device does not accept any program or erase operations. It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down. 3.9 Ready/Busy (RB) The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R controller is currently active. When Ready/Busy is Low, VOL, a read, program or erase operation is in progress. When the operation completes Ready/Busy goes High, VOH. The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor. A Low will then indicate that one, or more, of the memories is busy. During power-up and power-down a recovery time of 10 µs (min) is required before the command interface is ready to accept a command. During the recovery time the RB signal is Low, VOL. Refer to the Section 10.1: Ready/Busy signal electrical characteristics for details on how to calculate the value of the pull-up resistor. 3.10 VDD supply voltage VDD provides the power supply to the internal core of the memory device. It is the main power supply for all operations (read, program and erase). An internal voltage detector disables all functions whenever VDD is below the VLKO threshold (see Figure 36: Data protection) to protect the device from any involuntary program/erase operations during power-transitions. Each device in a system should have VDD decoupled with a 0.1 µF capacitor. The PCB track widths should be sufficient to carry the required program and erase currents 15/55 Signal descriptions 3.11 NAND512-A2C VSS ground Ground, VSS, is the reference for the power supply. It must be connected to the system ground. 16/55 NAND512-A2C 4 Bus operations Bus operations There are six standard bus operations that control the memory. Each of these is described in this section, see Table 5: Bus operations, for a summary. 4.1 Command input Command Input bus operations are used to give commands to the memory. Command are accepted when Chip Enable is Low, Command Latch Enable is High, Address Latch Enable is Low and Read Enable is High. They are latched on the rising edge of the Write Enable signal. Only I/O0 to I/O7 are used to input commands. See Figure 20 and Table 20 for details of the timings requirements. 4.2 Address input Address input bus operations are used to input the memory address. Three bus cycles are required to input the addresses for the 128-Mbit and 256-Mbit devices and four bus cycles are required to input the addresses for the 512-Mbit and 1-Gbit devices (refer to Table 6 and Table 7, Address Insertion). The addresses are accepted when Chip Enable is Low, Address Latch Enable is High, Command Latch Enable is Low and Read Enable is High. They are latched on the rising edge of the Write Enable signal. Only I/O0 to I/O7 are used to input addresses. See Figure 21 and Table 20 for details of the timings requirements. 4.3 Data input Data Input bus operations are used to input the data to be programmed. Data is accepted only when Chip Enable is Low, Address Latch Enable is Low, Command Latch Enable is Low and Read Enable is High. The data is latched on the rising edge of the Write Enable signal. The data is input sequentially using the Write Enable signal. See Figure 22, Table 20, and Table 21 for details of the timings requirements. 4.4 Data output Data Output bus operations are used to read: the data in the memory array, the status register, the electronic signature and the serial number. Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is Low, and Command Latch Enable is Low. The data is output sequentially using the Read Enable signal. See Figure 23 and Table 21 for details of the timings requirements. 17/55 Bus operations 4.5 NAND512-A2C Write protect Write protect bus operations are used to protect the memory against program or erase operations. When the Write Protect signal is Low the device will not accept program or erase operations and so the contents of the memory array cannot be altered. The Write Protect signal is not latched by Write Enable to ensure protection even during power-up. 4.6 Standby When Chip Enable is High the memory enters standby mode, the device is deselected, outputs are disabled and power consumption is reduced. Table 5. Bus operations Bus operation E AL CL R W WP I/O0 - I/O7 I/O8 - I/O15(1) Command input VIL VIL VIH VIH Rising X(2) Command X Address input VIL VIH VIL VIH Rising X Address X Data input VIL VIL VIL VIH Rising X Data input Data input Data output VIL VIL VIL Falling VIH X Data output Data output Write protect X X X X X VIL X X Standby VIH X X X X X X X 1. Only for x16 devices. 2. WP must be VIH when issuing a program or erase command. Table 6. Address insertion, x8 devices(1)(2) Bus cycle I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 1st A7 A6 A5 A4 A3 A2 A1 A0 2nd A16 A15 A14 A13 A12 A11 A10 A9 rd 3 A24 A23 A22 A21 A20 A19 A18 A17 4th VIL VIL VIL VIL VIL VIL VIL A25 1. A8 is set Low or High by the 00h or 01h command, see Section 6.1: Pointer operations. 2. Any additional address input cycles is ignored. Table 7. Address insertion, x16 devices(1)(2) I/O8- Bus cycle I/O15 1st I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 X A7 A6 A5 A4 A3 A2 A1 A0 2nd X A16 A15 A14 A13 A12 A11 A10 A9 3rd X A24 A23 A22 A21 A20 A19 A18 A17 4th(4) X VIL VIL VIL VIL VIL VIL VIL A25 1. A8 is don’t care in x16 devices. 2. Any additional address input cycle is ignored. 18/55 NAND512-A2C Table 8. Bus operations Address definition Address Definition A0 - A7 Column address A9 - A25 Page address A9 - A13 Address in block A14 - A25 Block address A8 A8 is set Low or High by the 00h or 01h command, and is don’t care in x16 devices 19/55 Command set 5 NAND512-A2C Command set All bus write operations to the device are interpreted by the command interface. The commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when the Command Latch Enable signal is High. Device operations are selected by writing specific commands to the command register. The two-step command sequences for program and erase operations are imposed to maximize data security. The commands are summarized in Table 9. Table 9. Commands Bus write operations(1)(2) Command 1st cycle 2nd cycle 3rd cycle Read A 00h – – Read B(3) 01h – – Read C 50h – – Read Electronic Signature 90h – – Read Status Register 70h – – Page Program 80h 10h – Copy Back Program 00h 8Ah (10h)(4) Block Erase 60h D0h – Reset FFh – – Command accepted during busy Yes Yes 1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or input/output data are not shown. 2. Any undefined command sequence is ignored by the device. 3. The Read B command (code 01h) is not used in x16 devices. 4. The Program Confirm command (code 10h) is no more necessary for NAND512-A2C devices. It is optional and has been maintained for backward compatibility. 20/55 NAND512-A2C Device operations 6 Device operations 6.1 Pointer operations As the NAND flash memories contain two different areas for x16 devices and three different areas for x8 devices (see Figure 7) the read command codes (00h, 01h, 50h) are used to act as pointers to the different areas of the memory array (they select the most significant column address). The Read A and Read B commands act as pointers to the main memory area. Their use depends on the bus width of the device. ● In x16 devices the Read A command (00h) sets the pointer to area A (the whole of the main area) that is words 0 to 255. ● In x8 devices the Read A command (00h) sets the pointer to area A (the first half of the main area) that is bytes 0 to 255, and the Read B command (01h) sets the pointer to area B (the second half of the main area) that is bytes 256 to 511. In both the x8 and x16 devices the Read C command (50h), acts as a pointer to area C (the spare memory area) that is bytes 512 to 527 or words 256 to 263. Once the Read A and Read C commands have been issued the pointer remains in the respective areas until another pointer code is issued. However, the Read B command is effective for only one operation, once an operation has been executed in area B the pointer returns automatically to area A. The pointer operations can also be used before a program operation, that is the appropriate code (00h, 01h or 50h) can be issued before the program command 80h is issued (see Figure 8). Figure 7. Pointer operations x8 devices Area A (00h) bytes 0 - 255 A Area B (01h) x16 devices Area C (50h) bytes bytes 256 - 511 512 - 527 B Pointer (00h,01h,50h) C Page buffer Area A (00h) Area C (50h) words 0 - 255 words 256 - 263 A C Page buffer Pointer (00h,50h) AI07592 21/55 Device operations Figure 8. NAND512-A2C Pointer operations for programming AREA A I/O 00h Address Inputs 80h Data Input 10h 00h 80h Address Inputs Data Input 10h Areas A, B, C can be programmed depending on how much data is input. Subsequent 00h commands can be omitted. AREA B I/O 01h Address Inputs 80h Data Input 10h 01h 80h Address Inputs Data Input 10h Areas B, C can be programmed depending on how much data is input. The 01h command must be re-issued before each program. AREA C I/O 50h Address Inputs 80h Data Input 10h 50h 80h Address Inputs Data Input 10h Only Areas C can be programmed. Subsequent 50h commands can be omitted. ai07591 6.2 Read memory array Each operation to read the memory area starts with a pointer operation as shown in the Section 6.1: Pointer operations. Once the area (main or spare) has been selected using the Read A, Read B or Read C commands four bus cycles (for 512-Mbit and 1-Gbit devices) or three bus cycles (for 128-Mbit and 256-Mbit devices) are required to input the address (refer to Table 6 and Table 7) of the data to be read. The device defaults to read A mode after power-up or a reset operation. When reading the spare area addresses: ● A0 to A3 (x8 devices) ● A0 to A2 (x16 devices) are used to set the start address of the spare area while addresses: ● A4 to A7 (x8 devices) ● A3 to A7 (x16 devices) are ignored. Once the Read A or Read C commands have been issued they do not need to be reissued for subsequent read operations as the pointer remains in the respective area. However, the Read B command is effective for only one operation, once an operation has been executed in area B the pointer returns automatically to area A and so another Read B command is required to start another read operation in area B. Once a Read command is issued two types of operations are available: random read and page read. 6.2.1 Random read Each time the command is issued the first read is random read. 22/55 NAND512-A2C 6.2.2 Device operations Page read After the random read access the page data is transferred to the page buffer in a time of tWHBH (refer to Table 21 for value). Once the transfer is complete the Ready/Busy signal goes High. The data can then be read out sequentially (from selected column address to last column address) by pulsing the Read Enable signal. Figure 9. Read (A,B,C) operations CL E W AL R tBLBH1 (read) RB I/O 00h/ 01h/ 50h Data output (sequentially) Address input Command code Busy ai07595c 6.2.3 Sequential row read After the data in last column of the page is output, if the Read Enable signal is pulsed and Chip Enable remains Low, then the next page is automatically loaded into the page buffer and the read operation continues. A sequential row read operation can only be used to read within a block. If the block changes a new read command must be issued. Refer to Figure 10: Sequential row read operations and Figure 11: Sequential row read block diagrams for details about sequential row read operations. To terminate a sequential row read operation, set to High the Chip Enable signal for more than tEHEL. Sequential row read is not available when the Chip Enable don’t care option is enabled. 23/55 Device operations NAND512-A2C Figure 10. Sequential row read operations tBLBH1 tBLBH1 tBLBH1 (Read busy time) RB Busy Busy I/O 00h/ 01h/ 50h 1st page output Address inputs Busy Nth page output 2nd page output Command code ai07597 Figure 11. Sequential row read block diagrams Read A command, x8 devices Read A command, x16 devices Area B Area A Area C (1st half Page) (2nd half Page) (Spare) Area A (main area) 1st page 2nd page Nth page Block 1st page 2nd page Nth page Block Read B command, x8 devices Read C command, x8/x16 devices Area B Area A Area C (1st half Page) (2nd half Page) (Spare) Area A 1st page 2nd page Nth page Block Area C (Spare) Area A/ B Area C (Spare) 1st page 2nd page Nth page Block AI07598 Figure 12. Read block diagrams Read A command, x8 devices Area A (1st half page) Read A command, x16 devices Area B Area C (2nd half page) (spare) Area A (main area) A9-A26(1) A9-A26(1) A0-A7 A0-A7 Read B command, x8 devices Area A (1st half page) Read C command, x8/x16 devices Area B Area C (2nd half page) (spare) A9-A26(1) A0-A7 Area C (spare) Area A Area A/ B Area C (spare) A9-A26(1) A0-A3 (x 8) A0-A2 (x 16) A4-A7 (x 8), A3-A7 (x 16) are don't care AI07596 1. Highest address depends on device density. 24/55 NAND512-A2C 6.3 Device operations Page program The page program operation is the standard operation to program data to the memory array. The main area of the memory array is programmed by page, however partial page programming is allowed where any number of bytes (1 to 528) or words (1 to 264) can be programmed. The maximum number of consecutive partial page program operations allowed in the same page is three. After exceeding this a Block Erase command must be issued before any further program operations can take place in that page. Before starting a page program operation a pointer operation can be performed to point to the area to be programmed. Refer to the Section 6.1: Pointer operations and Figure 8 for details. Each page program operation consists of five steps (see Figure 13): 1. One bus cycle is required to setup the Page Program command 2. Four bus cycles are then required to input the program address (refer to Table 6 and Table 7) 3. The data is then input (up to 528 bytes/264 words) and loaded into the page buffer 4. One bus cycle is required to issue the confirm command to start the P/E/R controller 5. The P/E/R controller then programs the data into the array. Once the program operation has started the status register can be read using the Read Status Register command. During program operations the status register only flags errors for bits set to '1' that have not been successfully programmed to '0'. During the program operation, only the Read Status Register and Reset commands are accepted, all other commands are ignored. Once the program operation has completed the P/E/R controller bit SR6 is set to ‘1’ and the Ready/Busy signal goes High. The device remains in read status register mode until another valid command is written to the command interface. Figure 13. Page program operation tBLBH2 (Program Busy time) RB Busy I/O 80h Page Program Setup Code Address Inputs Data Input 10h Confirm Code 70h SR0 Read Status Register ai07566 1. Before starting a page program operation a pointer operation can be performed. Refer to Section 6.1: Pointer operations for details. 25/55 Device operations 6.4 NAND512-A2C Copy back program The copy back program operation is used to copy the data stored in one page and reprogram it in another page. The copy back program operation does not require external memory and so the operation is faster and more efficient because the reading and loading cycles are not required. The operation is particularly useful when a portion of a block is updated and the rest of the block needs to be copied to the newly assigned block. If the copy back program operation fails an error is signalled in the status register. However as the standard external ECC cannot be used with the copy back operation bit error due to charge loss cannot be detected. For this reason it is recommended to limit the number of copy back operations on the same data and or to improve the performance of the ECC. The copy back program operation requires two steps: 1. The source page must be read using the Read A command (one bus write cycle to setup the command and then 4 bus write cycles to input the source page address). This operation copies all 264 words/ 528 bytes from the page into the page buffer 2. When the device returns to the ready state (Ready/Busy High), the second bus write cycle of the command is given with the 4 bus cycles to input the target page address. Refer to Table 10 for the addresses that must be the same for the source and target pages 3. The Program Confirm command (code 10h) is no more necessary on NAND512-A2C devices. It is optional and has been maintained for backward compatibility. After a copy back program operation, a partial-page program is not allowed in the target page until the block has been erased. See Figure 14 for an example of the copy back operation. Table 10. Copy back program addresses Density Same address for source and target pages 512 Mbits A25 Figure 14. Copy back operation tBLBH1 tBLBH2 (Read Busy time) (Program Busy time) RB Busy I/O 00h Read Code Source Address Inputs 8Ah Copy Back Code Target Address Inputs 10h(1) 70h SR0 Read Status Register ai13187 1. The Program Confirm command (code 10h) is no more necessary on NAND512-A2C devices. It is optional and has been maintained for backward compatibility. 26/55 NAND512-A2C 6.5 Device operations Block erase Erase operations are done one block at a time. An erase operation sets all of the bits in the addressed block to ‘1’. All previous data in the block is lost. An erase operation consists of three steps (refer to Figure 15): 1. One bus cycle is required to setup the Block Erase command 2. Only three bus cycles for 512-Mbit and 1-Gbit devices, or two for 128-Mbit and 256-Mbit devices are required to input the block address. The first cycle (A0 to A7) is not required as only addresses A14 to A25 are valid, A9 to A13 are ignored. In the last address cycle I/O2 to I/O7 must be set to VIL. 3. One bus cycle is required to issue the confirm command to start the P/E/R controller. Once the erase operation has completed the status register can be checked for errors. Figure 15. Block erase operation tBLBH3 (Erase Busy time) RB Busy I/O 60h Block Erase Setup Code Block Address Inputs D0h Confirm Code 70h SR0 Read Status Register ai07593 6.6 Reset The Reset command is used to reset the command interface and status register. If the Reset command is issued during any operation, the operation will be aborted. If it was a program or erase operation that was aborted, the contents of the memory locations being modified will no longer be valid as the data will be partially programmed or erased. If the device has already been reset then the new Reset command will not be accepted. The Ready/Busy signal goes Low for tBLBH4 after the Reset command is issued. The value of tBLBH4 depends on the operation that the device was performing when the command was issued, refer to Table 21 for the values. 27/55 Device operations 6.7 NAND512-A2C Read status register The device contains a status register which provides information on the current or previous program or erase operation. The various bits in the status register convey information and errors on the operation. The status register is read by issuing the Read Status Register command. The status register information is present on the output data bus (I/O0-I/O7) on the falling edge of Chip Enable or Read Enable, whichever occurs last. When several memories are connected in a system, the use of Chip Enable and Read Enable signals allows the system to poll each device separately, even when the Ready/Busy pins are common-wired. It is not necessary to toggle the Chip Enable or Read Enable signals to update the contents of the status register. After the Read Status Register command has been issued, the device remains in read status register mode until another command is issued. Therefore if a Read Status Register command is issued during a random read cycle a new read command must be issued to continue with a page read. The status register bits are summarized in Table 11: Status register bits. Refer to Table 11 in conjunction with the following text descriptions. 6.7.1 Write protection bit (SR7) The write protection bit can be used to identify if the device is protected or not. If the write protection bit is set to ‘1’ the device is not protected and program or erase operations are allowed. If the write protection bit is set to ‘0’ the device is protected and program or erase operations are not allowed. 6.7.2 P/E/R controller bit (SR6) The program/erase/read controller bit indicates whether the P/E/R controller is active or inactive. When the P/E/R controller bit is set to ‘0’, the P/E/R controller is active (device is busy); when the bit is set to ‘1’, the P/E/R controller is inactive (device is ready). 6.7.3 Error bit (SR0) The error bit is used to identify if any errors have been detected by the P/E/R controller. The error bit is set to ’1’ when a program or erase operation has failed to write the correct data to the memory. If the error bit is set to ‘0’ the operation has completed successfully. 6.7.4 SR5, SR4, SR3, SR2 and SR1 are reserved Table 11. Status register bits Bit Name SR7 Write protection SR6 Program/ erase/ read controller SR5, SR4, SR3, SR2, SR1 Reserved SR0 Generic error 28/55 Logic level '1' Definition Not protected '0' Protected '1' P/E/R C inactive, device ready '0' P/E/R C active, device busy Don’t care ‘1’ Error – operation failed ‘0’ No error – operation successful NAND512-A2C 6.8 Device operations Read electronic signature The device contains a manufacturer code and device code. To read these codes two steps are required: 1. first use one bus write cycle to issue the Read Electronic Signature command (90h), followed by an address input of 00h 2. then perform two bus read operations – the first reads the manufacturer code and the second, the device code. Further bus read operations are ignored. Refer to Table 12: Electronic signature, for information on the addresses. Table 12. Electronic signature Part number Manufacturer code NAND512R3A2C Device code 36h 20h NAND512W3A2C NAND512R4A2C 76h 0020h 0046h 29/55 Software algorithms 7 NAND512-A2C Software algorithms This section gives information on the software algorithms that Numonyx recommends to implement to manage the bad blocks and extend the lifetime of the NAND device. NAND flash memories are programmed and erased by Fowler-Nordheim tunneling using a high voltage. Exposing the device to a high voltage for extended periods can cause the oxide layer to be damaged. For this reason, the number of program and erase cycles is limited (see Table 14: Program, erase times and program erase endurance cycles for value) and it is recommended to implement garbage collection, a wear-leveling algorithm and an error correction code, to extend the number of program and erase cycles and increase the data retention. To help integrate a NAND memory into an application Numonyx can provide a full range of software solutions: file system, sector management, drivers, and code management. Contact the nearest Numonyx sales office or visit www.numonyx.com for more details. 7.1 Bad block management Devices with bad blocks have the same quality level and the same AC and DC characteristics as devices where all the blocks are valid. A bad block does not affect the performance of valid blocks because it is isolated from the bit line and common source line by a select transistor. The devices are supplied with all the locations inside valid blocks erased (FFh). The bad block information is written prior to shipping. Any block where the 6th byte (x8 device)/1st word (x16 device) in the spare area of the 1st page does not contain FFh is a bad block. The bad block information must be read before any erase is attempted as the bad block information may be erased. For the system to be able to recognize the bad blocks based on the original information it is recommended to create a bad block table following the flowchart shown in Figure 16. 7.2 NAND flash memory failure modes Over the lifetime of the device additional bad blocks may develop. To implement a highly reliable system, all the possible failure modes must be considered: ● Program/erase failure: in this case the block has to be replaced by copying the data to a valid block. These additional bad blocks can be identified as attempts to program or erase them will give errors in the status register. As the failure of a page program operation does not affect the data in other pages in the same block, the block can be replaced by re-programming the current data and copying the rest of the replaced block to an available valid block. The Copy Back Program command can be used to copy the data to a valid block. See Section 6.4: Copy back program for more details ● Read failure: in this case, ECC correction must be implemented. To efficiently use the memory space, it is mandatory to recover single-bit errors, which occur during read operations, by using ECC without replacing the whole block. Refer to Table 13 for the procedure to follow if an error occurs during an operation. 30/55 NAND512-A2C Table 13. Software algorithms NAND flash failure modes Operation Procedure Erase Block Replacement Program Block Replacement Read ECC Figure 16. Bad block management flowchart START Block Address = Block 0 Data = FFh? Increment Block Address NO Update Bad Block table YES Last block? NO YES END AI07588C 31/55 Software algorithms 7.3 NAND512-A2C Garbage collection When a data page needs to be modified, it is faster to write to the first available page, and the previous page is marked as invalid. After several updates it is necessary to remove invalid pages to free some memory space. To free this memory space and allow further program operations it is recommended to implement a garbage collection algorithm. In a garbage collection software the valid pages are copied into a free area and the block containing the invalid pages is erased (see Figure 17). Figure 17. Garbage collection New area (after GC) Old area Valid page Invalid page Free page (erased) AI07599B 7.4 Wear-leveling algorithm For write-intensive applications, it is recommended to implement a wear-leveling algorithm to monitor and spread the number of write cycles per block. In memories that do not use a wear-leveling algorithm not all blocks get used at the same rate. The wear-leveling algorithm ensures that equal use is made of all the available write cycles for each block. There are two wear-leveling levels: ● First level wear-leveling, new data is programmed to the free blocks that have had the fewest write cycles ● Second level wear-leveling, long-lived data is copied to another block so that the original block can be used for more frequently-changed data. The second level wear-leveling is triggered when the difference between the maximum and the minimum number of write cycles per block reaches a specific threshold. 7.5 Error correction code An error correction code (ECC) can be implemented in the NAND flash memories to identify and correct errors in the data. For every 2048 bits in the device the implementation of 22 bits of ECC (16 bits for line parity plus 6 bits for column parity) is required. 32/55 NAND512-A2C Software algorithms An ECC model is available in VHDL or Verilog. Contact the nearest Numonyx sales office for more details. Figure 18. Error detection New ECC generated during read XOR previous ECC with new ECC All results = zero? NO >1 bit = zero? YES NO YES 22 bit data = 0 11 bit data = 1 1 bit data = 1 No Error Correctable Error ECC Error ai08332 7.6 Hardware simulation models 7.6.1 Behavioral simulation models Denali software corporation models are platform independent functional models designed to assist customers in performing entire system simulations (typical VHDL/Verilog). These models describe the logic behavior and timings of NAND flash devices, and so allow software to be developed before hardware. 7.6.2 IBIS simulations models IBIS (I/O buffer information specification) models describe the behavior of the I/O buffers and electrical characteristics of flash devices. These models provide information such as AC characteristics, rise/fall times and package mechanical data, all of which are measured or simulated at voltage and temperature ranges wider than those allowed by target specifications. IBIS models are used to simulate PCB connections and can be used to resolve compatibility issues when upgrading devices. They can be imported into SPICETOOLS. 33/55 Program and erase times and endurance cycles 8 NAND512-A2C Program and erase times and endurance cycles The program and erase times and the number of program/erase cycles per block are shown in Table 14. Table 14. Program, erase times and program erase endurance cycles NAND flash Parameters Unit Min Page program time Block erase time Program/erase cycles per block (with ECC) Data retention 9 Typ Max 200 500 µs 2 3 ms 100,000 cycles 10 years Maximum ratings Stressing the device above the ratings listed in Table 15: Absolute maximum ratings, may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 15. Absolute maximum ratings Value Symbol Parameter Unit Min Max TBIAS Temperature under bias – 50 125 °C TSTG Storage temperature – 65 150 °C TLEAD Lead temperature during soldering 260 °C VIO(1) Input or output voltage VDD 1.8 V devices – 0.6 2.7 V 3 V devices – 0.6 4.6 V 1.8 V devices – 0.6 2.7 V 3 V devices – 0.6 4.6 V Supply voltage 1. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins. Maximum voltage may overshoot to VDD + 2 V for less than 20 ns during transitions on I/O pins. 34/55 NAND512-A2C 10 DC and AC parameters DC and AC parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics tables that follow, are derived from tests performed under the measurement conditions summarized in Table 16: Operating and AC measurement conditions. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. Table 16. Operating and AC measurement conditions NAND flash Parameter Supply voltage (VDD) Ambient temperature (TA) Load capacitance (CL) (1 TTL GATE and CL) Units Min Max 1.8 V devices 1.7 1.95 V 3 V devices 2.7 3.6 V Grade 6 –40 85 °C 1.8 V devices 30 pF 3 V devices 50 pF 1.8 V devices 0 VDD V 3 V devices 0.4 2.4 V Input pulses voltages 1.8 V devices 0.9 V 3 V devices 1.5 V 5 ns 8.35 kΩ Input and output timing ref. voltages Input rise and fall times Output circuit resistors, Rref Table 17. Symbol Capacitance(1)(2) Parameter Test conditions Typ Max Unit CIN Input capacitance VIN = 0 V 10 pF CI/O Input/output capacitance VIL = 0 V 10 pF 1. TA = 25 °C, f = 1 MHz. CIN and CI/O are not 100% tested. 2. Input/output capacitances double on stacked devices. 35/55 DC and AC parameters Table 18. Symbol NAND512-A2C DC characteristics, 1.8 V devices(1) M Parameter IDD1 IDD2 Operating current Test conditions Min Typ Max Unit Sequential read tRLRL minimum E=VIL, IOUT = 0 mA – 8 15 mA Program – – 8 15 mA Erase – – 8 15 mA IDD3 IDD5 Standby current (CMOS) E = VDD - 0.2, WP=0/VDD – 10 50 µA ILI Input leakage current VIN = 0 to VDDmax – – ±10 µA ILO Output leakage current VOUT = 0 to VDDmax – – ±10 µA VIH Input high voltage – VDD - 0.4 – VDD + 0.3 V VIL Input low voltage – -0.3 – 0.4 V VOH Output high voltage level IOH = -100 µA VDD-0.1 – - V VOL Output low voltage level IOL = 100 µA – – 0.1 V IOL (RB) Output low current (RB) VOL = 0.1 V 3 4 VLKO VDD supply voltage (erase and program lockout) – – – 1. Leakage currents double on stacked devices. Figure 19. Equivalent testing circuit for AC characteristics measurement VDD 2Rref NAND flash CL 2Rref GND GND Ai11085 36/55 mA 1.1 V NAND512-A2C Table 19. DC and AC parameters DC characteristics, 3 V devices(1) Symbol Parameter IDD1 IDD2 Operating current Test conditions Min Typ Max Unit Sequential read tRLRL minimum E = VIL, IOUT = 0 mA – 10 20 mA Program – – 10 20 mA Erase – – 10 20 mA IDD3 IDD4 Standby current (TTL), E=VIH, WP=0V/VDD – – 1 mA IDD5 Standby current (CMOS) E=VDD-0.2, WP=0/VDD – 10 50 µA ILI Input leakage current VIN= 0 to VDDmax – – ±10 µA ILO Output leakage current VOUT= 0 to VDDmax – – ±10 µA VIH Input high voltage – 2.0 – VDD+0.3 V VIL Input low voltage – −0.3 – 0.8 V VOH Output high voltage level IOH = −400 µA 2.4 – – V VOL Output low voltage level IOL = 2.1 mA – – 0.4 V IOL (RB) Output low current (RB) VOL = 0.4 V 8 10 VLKO VDD supply voltage (erase and program lockout) – – – mA 1.5 V 1. Leakage currents double on stacked devices. Table 20. Symbol tALLWH tALHWH tCLHWH tCLLWH AC characteristics for command, address, data input Alt. symbol 1.8 V 3V Unit devices devices Parameter Address Latch Low to Write Enable High tALS AL setup time Min 25 15 ns CL setup time Min 25 15 ns Address Latch High to Write Enable High Command Latch High to Write Enable High tCLS Command Latch Low to Write Enable High tDVWH tDS Data Valid to Write Enable High Data setup time Min 20 15 ns tELWH tCS Chip Enable Low to Write Enable High E setup time Min 30 20 ns AL hold time Min 10 5 ns CL hold time Min 10 5 ns tWHALH tWHALL tWHCLH tWHCLL Write Enable High to Address Latch High tALH Write Enable High to Address Latch Low Write Enable High to Command Latch High tCLH Write Enable High to Command Latch Low tWHDX tDH Write Enable High to Data Transition Data hold time Min 10 5 ns tWHEH tCH Write Enable High to Chip Enable High E hold time Min 10 5 ns tWHWL tWH Write Enable High to Write Enable Low W High hold time Min 15 10 ns tWLWH tWP Write Enable Low to Write Enable High W pulse width Min 25 15 ns tWLWL tWC Write Enable Low to Write Enable Low Write cycle time Min 45 30 ns 37/55 DC and AC parameters Table 21. Symbol tALLRL1 tALLRL2 tBHRL AC characteristics for operations Alt. symbol 1.8 V devices Parameter 3V Unit devices Address Latch Low to Read electronic signature Read Enable Low Read cycle Min 10 10 ns tAR Min 10 10 ns tRR Ready/Busy High to Read Enable Low Min 20 20 ns Read busy time Max 15 12 µs Program busy time Max 500 500 µs Erase busy time Max 3 3 ms Reset busy time, during ready Max 5 5 µs Reset busy time, during read Max 5 5 µs Reset busy time, during program Max 10 10 µs Reset busy time, during erase Max 500 500 µs Command Latch Low to Read Enable Low Min 10 10 ns Data Hi-Z to Read Enable Low Min 0 0 ns tBLBH1 tBLBH2 tPROG tBLBH3 tBERS Ready/Busy Low to Ready/Busy High tBLBH4 NAND512-A2C tRST tCLLRL tCLR tDZRL tIR tEHQZ tCHZ Chip Enable High to Output Hi-Z Max 30 30 ns tELQV tCEA Chip Enable Low to Output Valid Max 45 35 ns tRHRL tREH Read Enable High to Read Enable Low Min 15 10 ns tRHQZ tRHZ Read Enable High to Output Hi-Z Max 30 30 ns TOH Chip Enable High or Read Enable High to Output Hold Min 10 10 ns tRLRH tRP Read Enable Low to Read Enable High Read Enable pulse width Min 25 15 ns tRLRL tRC Read Enable Low to Read Enable Low Read cycle time Min 50 30 ns tRLQV tREA Read Enable Low to Output Valid Max 30 18 ns tWHBH tR Write Enable High to Ready/Busy High Max 15 12 µs tWHBL tWB Write Enable High to Ready/Busy Low Max 100 100 ns tWHRL tWHR Write Enable High to Read Enable Low Min 60 60 ns tVHWH tVLWH(2) tWW Write protection time Min 100 100 ns tEHQX tRHQX Read Enable High hold time Read Enable access time Read ES access time(1) Read busy time 1. ES = electronic signature. 2. During a program/erase enable operation, tVHWH is the delay from WP High to W High. During a program/erase disable operation, tVLWH is the delay from WP Low to W High. 38/55 NAND512-A2C DC and AC parameters Figure 20. Command Latch AC waveforms CL tWHCLL tCLHWH (CL Setup time) (CL Hold time) tWHEH tELWH (E Hold time) H(E Setup time) E tWLWH W tALLWH tWHALH (ALSetup time) (AL Hold time) AL tDVWH tWHDX (Data Setup time) (Data Hold time) I/O Command ai13105 Figure 21. Address Latch AC waveforms tCLLWH (CL Setup time) CL tWLWL tELWH tWLWL tWLWL tWLWL (E Setup time) E tWLWH tWLWH tWLWH tWLWH tWLWH W tWHWL tWHWL tWHWL tWHWL tALHWH (AL Setup time) tWHALL tWHALL tWHALL tWHALL (AL Hold time) AL tDVWH tDVWH (Data Setup time) tDVWH tDVWH tWHDX tWHDX tDVWH tWHDX tWHDX tWHDX (Data Hold time) I/O Adrress cycle 1 Adrress cycle 2 Adrress cycle 3 Adrress cycle 4 Adrress cycle 5 ai13106 39/55 DC and AC parameters NAND512-A2C Figure 22. Data Input Latch AC waveforms tWHCLH (CL Hold time) CL tWHEH (E Hold time) E tALLWH (ALSetup time) tWLWL AL tWLWH tWLWH tWLWH W tDVWH tDVWH tDVWH (Data Setup time) tWHDX tWHDX tWHDX (Data Hold time) I/O Data In 0 Data In 1 Data In Last ai13107 Figure 23. Sequential data output after read AC waveforms tEHQX tEHQZ ai08031b 1. CL = Low, AL = Low, W = High. 40/55 NAND512-A2C DC and AC parameters Figure 24. Read status register AC waveforms tCLHWH tELWH tEHQX ai08032c Figure 25. Read electronic signature AC waveforms CL E W AL tALLRL1 R tRLQV (Read ES Access time) I/O 90h Read Electronic Signature Command 00h 1st Cycle Address Man. code Device code Manufacturer and Device Codes ai08039b 1. Refer to Table 12 for the values of the manufacturer and device codes. 41/55 DC and AC parameters NAND512-A2C Figure 26. Page read A/read B operation AC waveforms CL E tWLWL tEHQZ W tWHBL AL tALLRL2 tWHBH tRLRL tRHQZ (Read Cycle time) R tRLRH tBLBH1 RB I/O 00h or 01h Command Code Add.N cycle 1 Add.N cycle 2 Add.N cycle 3 Address N Input Data N Add.N cycle 4 Busy Data N+1 Data N+2 Data Last Data Output from Address N to Last Byte or Word in Page tRHQX tEHQX ai08033c 42/55 NAND512-A2C DC and AC parameters Figure 27. Read C operation, one page AC waveforms CL E W tWHBH tWHALL AL tALLRL2 tBHRL R I/O 50h Add. M cycle 1 Add. M Add. M cycle 2 cycle 3 Add. M cycle 4 Data M Data Last RB Command Code Address M Input Busy Data Output from M to Last Byte or Word in Area C ai08035b 1. A0-A7 is the address in the spare memory area, where A0-A3 are valid and A4-A7 are don’t care. 43/55 DC and AC parameters NAND512-A2C Figure 28. Page program AC waveforms CL E tWLWL tWLWL tWLWL (Write Cycle time) W tWHBL tBLBH2 (Program Busy time) AL R I/O 80h Add.N cycle 1 Add.N Add.N Add.N cycle 2 cycle 3 cycle 4 N Last 10h 70h SR0 RB Page Program Setup Code Address Input Data Input Confirm Code Page Program Read Status Register ai08037 44/55 NAND512-A2C DC and AC parameters Figure 29. Block erase AC waveforms CL E tWLWL (Write Cycle time) W tBLBH3 tWHBL (Erase Busy time) AL R I/O 60h Add. cycle 1 Add. Add. cycle 2 cycle 3 D0h 70h SR0 RB Block Erase Setup Command Block Address Input Confirm Code Block Erase Read Status Register ai08038b Figure 30. Reset AC waveforms W AL CL R I/O FFh tBLBH4 (Reset Busy time) RB ai08043 45/55 DC and AC parameters NAND512-A2C Figure 31. Program/erase enable waveforms W tVHWH WP RB 80h I/O 10h ai12477 Figure 32. Program/erase disable waveforms W tVLWH WP High RB 80h I/O 10h ai12478 10.1 Ready/Busy signal electrical characteristics Figure 33, Figure 34 and Figure 35 show the electrical characteristics for the Ready/Busy signal. The value required for the resistor RP can be calculated using the following equation: (V – ) DDmax V OLmax R P min = ------------------------------------------------------------I OL + I L So, 1.85V R P min ( 1.8V ) = --------------------------3mA + I L 3.2V R P min ( 3V ) = --------------------------8mA + I L where IL is the sum of the input currents of all the devices tied to the Ready/Busy signal. RP max is determined by the maximum value of tr. 46/55 NAND512-A2C DC and AC parameters Figure 33. Ready/Busy AC waveform 1.8 V device - VOL: 0.1 V, VOH : VDD - 0.1 V 3.3 V device - VOL: 0.4 V, VOH : 2.4 V ready VDD VOH VOL busy tr tf NI3087 Figure 34. Ready/Busy load circuit VDD RP ibusy DEVICE RB Open Drain Output VSS AI07563B 47/55 DC and AC parameters NAND512-A2C Figure 35. Resistor value versus waveform timings for Ready/Busy signal 1. T = 25°C. 10.2 Data protection The Numonyx NAND device is designed to guarantee data protection during power transitions. A VDD detection circuit disables all NAND operations, if VDD is below the VLKO threshold. In the VDD range from VLKO to the lower limit of nominal range, the WP pin should be kept Low (VIL) to guarantee hardware protection during power transitions as shown in the figure below (Figure 36). Figure 36. Data protection VDD Nominal Range VLKO Locked Locked WP Ai13188 48/55 NAND512-A2C 11 Package mechanical Package mechanical To meet environmental requirements, Numonyx offers these devices in RoHS compliant packages, which have a lead-free second-level interconnect. The category of second-level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. RoHS compliant specifications are available at www.numonyx.com. Figure 37. TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, package outline 1 48 e D1 B 24 L1 25 A2 E1 E A A1 DIE α L C CP TSOP-G 1. Drawing is not to scale. Table 22. TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, mechanical data millimeters inches Symbol Typ Min A Max Typ Min 1.20 Max 0.047 A1 0.10 0.05 0.15 0.004 0.002 0.006 A2 1.00 0.95 1.05 0.039 0.037 0.041 B 0.22 0.17 0.27 0.009 0.007 0.011 0.10 0.21 0.004 0.008 C CP 0.08 0.003 D1 12.00 11.90 12.10 0.472 0.468 0.476 E 20.00 19.80 20.20 0.787 0.779 0.795 E1 18.40 18.30 18.50 0.724 0.720 0.728 e 0.50 – – 0.020 – – L 0.60 0.50 0.70 0.024 0.020 0.028 L1 0.80 α 3° 0° 5° 0.031 0° 5° 3° 49/55 Package mechanical NAND512-A2C Figure 38. VFBGA55 8 x 10 x 1.05 mm - 6 x 8 +7 active ball array, 0.8 mm pitch, package outline D D2 D1 SD e SE E1 E2 E FE FE1 FD1 b FD ddd A A2 A1 BGA-Z61 1. Drawing is not to scale. 50/55 NAND512-A2C Table 23. Package mechanical VFBGA55 8 x 10 x 1.05 mm - 6 x 8 +7 active ball array, 0.8 mm pitch, mechanical data millimeters inches Symbol Typ Min A Max Typ Min 1.05 A1 Max 0.041 0.25 0.010 A2 0.65 0.026 b 0.45 0.40 0.50 0.018 0.016 0.020 D 8.00 7.90 8.10 0.315 0.311 0.319 D1 4.00 0.157 D2 5.60 0.220 ddd 0.10 E 10.00 E1 5.60 0.220 E2 8.80 0.346 e 9.90 10.10 0.004 0.394 0.80 0.390 0.398 0.031 FD 2.00 0.079 FD1 1.20 0.047 FE 2.20 0.087 FE1 0.60 0.024 SD 0.40 0.016 SE 0.40 0.016 51/55 Package mechanical NAND512-A2C Figure 39. VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15, 0.8 mm pitch, package outline D D2 D1 FD1 FE e E E2 SE E1 ddd b BALL "A1" FE1 A e SD FD A2 A1 BGA-Z75 1. Drawing is not to scale. Table 24. VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15 active ball array, 0.8 mm pitch, mechanical data millimeters inches Symbol Typ Min A Typ Min 1.05 A1 Max 0.041 0.25 0.010 A2 0.65 0.026 b 0.45 0.40 0.50 0.018 0.016 0.020 D 9.00 8.90 9.10 0.354 0.350 0.358 D1 4.00 0.157 D2 7.20 0.283 ddd 0.10 10.90 11.10 0.004 E 11.00 E1 5.60 0.220 E2 8.80 0.346 e 52/55 Max 0.433 0.80 0.429 0.031 FD 2.50 0.098 FD1 0.90 0.035 FE 2.70 0.106 FE1 1.10 0.043 SD 0.40 0.016 SE 0.40 0.016 0.437 NAND512-A2C 12 Ordering information Table 25. Ordering information scheme Example: Ordering information NAND512R3A 2 C ZA 6 E Device type NAND = NAND flash memory Density 512 = 512 Mbits Operating voltage R = VDD = 1.7 to 1.95 V W = VDD = 2.7 to 3.6 V Bus width 3 = x8 4 = x16 Family identifier A = 528-byte/ 264-word page Device options 0 = No option (Chip Enable ‘care’; sequential row read enabled) 2 = Chip Enable don’t care enabled Product version C = third version Package N = TSOP48 12 x 20 mm ZD = VFBGA55 8 x 10 x 1.05 mm ZA = VFBGA63 9 x 11 x 1.05 mm Temperature range 6 = –40 to 85 °C Option E = RoHS compliant package, standard packing F = RoHS compliant package, tape & reel packing Note: Not all combinations are necessarily available. For a list of available devices or for further information on any aspect of these products, please contact your nearest Numonyx sales office. 53/55 Revision history 13 NAND512-A2C Revision history Table 26. Document revision history Date Revision 26-Oct-2006 0.1 Initial release. 1 Datasheet status upgraded to ‘full datasheet’. USOP48 package removed. Data integrity of 100,000 specified for ECC implemented. tWHBH1 removed from Table 21: AC characteristics for operations. 19-Mar-2008 2 Added: tvHWH and tVLWH in Table 21: AC characteristics for operations, note 2 below the same table, Figure 31: Program/erase enable waveforms and Figure 32: Program/erase disable waveforms. Modified: Section 3.9: Ready/Busy (RB), procedure for program failure in Table 13: NAND flash failure modes, maximum value for VLKO in Table 19: DC characteristics, 3 V devices and Figure 24: Read status register AC waveforms. Minor text changes. 14-May-2008 3 Applied Numonyx branding. 24-Sep-2008 4 Added the sequential row read option and the package VFBGA55 throughout the document. 5 Document status upgraded from ‘full datasheet’ to ‘not for new design’. Added security features on the cover page and in Section 1: Description. Updated Figure 33: Ready/Busy AC waveform and Figure 35: Resistor value versus waveform timings for Ready/Busy signal. References to ECOPACK removed and replaced by RoHS compliance. Modified dimension A2 of the VFBGA55 and VFBGA63 packages in Table 23 and Table 24. Removed NAND512W4A2C root part number throughout the document. 08-Feb-2007 09-Jun-2009 54/55 Changes NAND512-A2C Please Read Carefully: INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. Numonyx may make changes to specifications and product descriptions at any time, without notice. Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. Copyright © 11/5/7, Numonyx B.V. All Rights Reserved. 55/55