Numonyx® Embedded Flash Memory (J3 65
nm) Single Bit per Cell (SBC)
32, 64, and 128 Mbit
Datasheet
Product Features
Architecture
— Symmetrical 128-KB blocks
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
— Blank Check to verify an erased block
Performance
— Initial Access Speed: 75ns
— 25 ns 8-word Asynchronous page-mode
reads
— 256-Word write buffer for x16 mode, 256Byte write buffer for x8 mode;
1.41 µs per Byte Effective programming
time
System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP
— 64-Ball Easy BGA package
Security
— Enhanced security options for code
protection
— Absolute protection with VPEN = Vss
— Individual block locking
— Block erase/program lockout during power
transitions
— Password Access feature
— One-Time Programmable Register:
64 OTP bits, programmed with unique
information by Numonyx
64 OTP bits, available for customer
programming
Software
— Program and erase suspend support
— Numonyx® Flash Data Integrator (FDI)
— Common Flash Interface (CFI) Compatible
— Scalable Command Set
Quality and Reliability
— Operating temperature:
-40 °C to +85 °C
— 100K Minimum erase cycles per block
— 65 nm Flash Technology
— JESD47E Compliant
208032-03
Jan 2011
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2010 Micron Technology, Inc. All rights reserved.
Legal Lines and Disclaime
Datasheet
2
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set
forth herein.
Although considered final, these specifications are subject to change, as further product development and data
characterization sometimes occur.
rs
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Contents
1.0
Introduction .............................................................................................................. 6
1.1
Nomenclature ..................................................................................................... 6
1.2
Acronyms........................................................................................................... 7
1.3
Conventions ....................................................................................................... 7
2.0
Functional Overview .................................................................................................. 9
2.1
Block Diagram .................................................................................................. 11
2.2
Memory Map..................................................................................................... 12
3.0
Package Information ............................................................................................... 13
3.1
56-Lead TSOP Package for 32-, 64-, 128-Mbit ....................................................... 13
3.2
64-Ball Easy BGA Package for 32-, 64-, 128-Mbit .................................................. 14
4.0
Ballouts/Pinouts and Signal Descriptions ................................................................ 16
4.1
Easy BGA Ballout for 32-, 64-, 128-Mbit ............................................................... 16
4.2
56-Lead TSOP Package Pinout for 32-, 64-,128-Mbit .............................................. 17
4.3
Signal Descriptions ............................................................................................ 18
5.0
Maximum Ratings and Operating Conditions............................................................ 19
5.1
Absolute Maximum Ratings ................................................................................. 19
5.2
Operating Conditions ......................................................................................... 19
5.3
Power-Up/Down ................................................................................................ 19
5.3.1 Power-Up/Down Sequence....................................................................... 19
5.3.2 Power Supply Decoupling ........................................................................ 20
5.4
Reset............................................................................................................... 20
6.0
Electrical Characteristics ......................................................................................... 21
6.1
DC Current Specifications ................................................................................... 21
6.2
DC Voltage specifications.................................................................................... 22
6.3
Capacitance...................................................................................................... 22
7.0
AC Characteristics ................................................................................................... 23
7.1
Read Specifications............................................................................................ 24
7.2
Program, Erase, Block-Lock Specifications ............................................................ 28
7.3
Reset Specifications........................................................................................... 28
7.4
AC Test Conditions ............................................................................................ 29
8.0
Bus Interface........................................................................................................... 30
8.1
Bus Reads ........................................................................................................ 31
8.1.1 Asynchronous Page Mode Read ................................................................ 31
8.1.2 Output Disable....................................................................................... 32
8.2
Bus Writes........................................................................................................ 32
8.3
Standby ........................................................................................................... 33
8.3.1 Reset/Power-Down ................................................................................. 33
8.4
Device Commands............................................................................................. 33
9.0
Flash Operations ..................................................................................................... 34
9.1
Status Register ................................................................................................. 34
9.1.1 Clearing the Status Register .................................................................... 35
9.2
Read Operations ............................................................................................... 35
9.2.1 Read Array ............................................................................................ 35
9.2.2 Read Status Register .............................................................................. 36
9.2.3 Read Device Information ......................................................................... 36
9.2.4 CFI Query ............................................................................................. 36
9.3
Programming Operations.................................................................................... 36
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Datasheet
3
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
9.4
9.5
9.6
9.7
9.8
9.3.1 Single-Word/Byte Programming................................................................36
9.3.2 Buffered Programming ............................................................................37
Block Erase Operations .......................................................................................38
Blank Check ......................................................................................................39
Suspend and Resume .........................................................................................39
Status Signal ....................................................................................................41
Security and Protection.......................................................................................42
9.8.1 Normal Block Locking ..............................................................................42
9.8.2 Configurable Block Locking.......................................................................43
9.8.3 Password Access.....................................................................................43
9.8.4 128-bit OTP Protection Register ................................................................43
9.8.5 Reading the 128-bit OTP Protection Register...............................................43
9.8.6 Programming the 128-bit OTP Protection Register .......................................43
9.8.7 Locking the 128-bit OTP Protection Register ...............................................44
9.8.8 VPEN Protection......................................................................................45
10.0 ID Codes ..................................................................................................................46
11.0 Device Command Codes ...........................................................................................47
12.0 Flow Charts..............................................................................................................48
13.0 Common Flash Interface ..........................................................................................57
13.1 Query Structure Output ......................................................................................57
13.2 Query Structure Overview...................................................................................58
13.3 Block Status Register .........................................................................................59
13.4 CFI Query Identification String ............................................................................59
13.5 System Interface Information..............................................................................60
13.6 Device Geometry Definition .................................................................................60
13.7 Primary-Vendor Specific Extended Query Table ......................................................61
A
Additional Information.............................................................................................64
B
Ordering Information...............................................................................................65
Datasheet
4
Jan 2011
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Revision History
Date
Revision
May 2009
01
March 2010
Jan 2011
Jan 2011
208032-03
02
03
Description
Initial release
Add Blank Check function and command.
Add Blank Check specification tBC/MB, update Clear Block Lock-Bits Max Time and Program
time in Table 13, “Configuration Performance” on page 28.
Update ICCR in Table 7, “DC Current Characteristics” on page 21.
Order information with device features digit.
Update part number information in Valid Combination table.
Add a note to clarify the SR output after E8 command in Figure 16, “Write to Buffer Flowchart” on
page 48.
State JESD47E Compliant at front page.
Update ECR.13 description in Table 18, “Enhanced Configuration Register” on page 32.
Correct the typo of comment for offset 24h at CFI from 2048µs to 1024µs.
Correct the typo of tAVQV and tELQV to Max Specifications.
Emphasize the valid and legal command usage at Section 11.0, “Device Command Codes” on
page 47.
Put a link for part numbers after Table 46, “Valid Combinations” on page 65.
Add Buffer Program Time for 128 Words (256 Bytes) at Table 13, “Configuration Performance” on
page 28.
Add JEDEC standard lead width for TSOP56 package at Table 1, “56-Lead TSOP Dimension Table” on
page 13.
Datasheet
5
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
1.0
Introduction
This document contains information pertaining to the Numonyx® Embedded Flash
Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and
specifications.
Unless otherwise indicated throughout the rest of this document, the Numonyx®
Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device is referred to as
J3 65 nm SBC.
The J3 65 nm SBC device provides improved mainstream performance with enhanced
security features, taking advantage of the high quality and reliability of the NOR-based
65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm
SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with
high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven
manufacturing experience and is ideal for code and data applications where high
density and low cost are required, such as in networking, telecommunications, digital
set top boxes, audio recording, and digital imaging. Numonyx Flash Memory
components also deliver a new generation of forward-compatible software support. By
using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers
can take advantage of density upgrades and optimized write capabilities of future
Numonyx Flash Memory devices.
1.1
J3 65 nm SBC
AMIN
AMAX
Nomenclature
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
All Densities
AMIN = A0 for x8
All Densities
AMIN = A1 for x16
32 Mbit
AMAX = A21
64 Mbit
AMAX = A22
128 Mbit
AMAX = A23
Block
A group of flash cells that share common erase circuitry and erase simultaneously.
Clear
Indicates a logic zero (0)
Program
Writes data to the flash array
Set
Indicates a logic one (1)
VPEN
Refers to a signal or package connection name
VPEN
Refers to timing or voltage levels
Datasheet
6
Jan 2011
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
1.2
Acronyms
SBC
Single Bit per Cell
FDI
Flash Data Integrator
CFI
Common Flash Interface
SCS
Scalable Command Set
CUI
Command User Interface
OTP
One Time Programmable
PLR
Protection Lock Register
PR
Protection Register
PRD
Protection Register Data
RFU
Reserved for Future Use
SR
Status Register
SRD
Status Register Data
WSM
Write State Machine
ECR
Enhanced Configuration Register
ECD
Enhanced Configuration Register Data
1.3
Jan 2011
208032-03
Conventions
h
Hexadecimal Suffix
K(noun)
1,000
M (noun)
1,000,000
Nibble
4 bits
Byte
8 bits
Word
16 bits
Kb
1,024 bits
KB
1,024 bytes
KW
1,024 words
Mb
1,048,576 bits
MB
1,048,576 bytes
MW
1,048,576 words
Kbit
1,024 bits
Mbit
1,048,576 bits
Datasheet
7
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Datasheet
8
Brackets
Square brackets ([]) will be used to designate group membership or to
define a group of signals with similar function (i.e. A[21:1], SR[4,1]
and D[15:0]).
00FFh
Denotes 16-bit hexadecimal numbers
00FF 00FFh
Denotes 32-bit hexadecimal numbers
DQ[15:0]
Data I/O signals
Jan 2011
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
2.0
Functional Overview
The J3 65 nm SBC family contains high-density memory organized in any of the
following configurations:
• 16-MB or 8-MW (128-Mbit), organized as one-hundred-twenty-eight 128-KB erase
blocks.
• 8-MB or 4-MW (64-Mbit), organized as sixty-four 128-KB erase blocks.
• 4-MB or 2-MW (32-Mbit), organized as thirty-two 128-KB erase blocks.
These devices can be accessed as 8- or 16-bit words. See Figure 1, “Memory Block
Diagram for 32-, 64-, 128-Mbit” on page 11 for further details.
A 128-bit Protection Register has multiple uses, including unique flash device
identification.
The J3 65 nm SBC device includes new security features that were not available on the
(previous) 0.13µm versions of the J3 family. These new security features prevent
altering of code through different protection schemes that can be implemented, based
on user requirements.
The J3 65 nm SBC optimized architecture and interface dramatically increases read
performance by supporting page-mode reads. This read mode is ideal for non-clock
memory systems.
Its Common Flash Interface (CFI) permits software algorithms to be used for entire
families of devices. This allows device-independent, JEDEC ID-independent, and
forward- and backward-compatible software support for the specified flash device
families. Flash vendors can standardize their existing interfaces for long-term
compatibility.
The Scalable Command Set (SCS) allows a single, simple software driver in all host
systems to work with all SCS-compliant flash memory devices, independent of systemlevel packaging (e.g., memory card, SIMM, or direct-to-board placement). Additionally,
SCS provides the highest system/device data transfer rates and minimizes device and
system-level implementation costs.
A Command User Interface (CUI) serves as the interface between the system processor
and internal operation of the device. A valid command sequence written to the CUI
initiates device automation. An internal Write State Machine (WSM) automatically
executes the algorithms and timings necessary for block erase, program, and lock-bit
configuration operations.
A block erase operation erases one of the device’s 128-KB blocks typically within one
second, independent of other blocks. Each block can be independently erased 100,000
times. Block erase suspend mode allows system software to suspend block erase to
read or program data from any other block. Similarly, program suspend allows system
software to suspend programming (byte/word program and write-to-buffer operations)
to read data or execute code from any other block that is not being suspended.
Each device incorporates a Write Buffer of 256-Byte (x8 mode) or 256-Word (x16
mode) to allow optimum programming performance. By using the Write Buffer data is
programmed more efficiently in buffer increments.
Memory Blocks are selectively and individually lockable in-system. Individual block
locking uses block lock-bits to lock and unlock blocks. Block lock-bits gate block erase
and program operations. Lock-bit configuration operations set and clear lock-bits (using
the Set Block Lock-Bit and Clear Block Lock-Bits commands).
Jan 2011
208032-03
Datasheet
9
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
The Status Register indicates when the WSM’s block erase, program, or lock-bit
configuration operation completes.
The STS (status) output gives an additional indicator of WSM activity by providing both
a hardware signal of status (versus software polling) and status masking (interrupt
masking for background block erase, for example). Status indication using STS
minimizes both CPU overhead and system power consumption. When configured in
level mode (default mode), it acts as a RY/BY# signal. When low, STS indicates that the
WSM is performing a block erase, program, or lock-bit configuration. STS-high indicates
that the WSM is ready for a new command, block erase is suspended (and
programming is inactive), program is suspended, or the device is in reset/power-down
mode. Additionally, the configuration command allows the STS signal to be configured
to pulse on completion of programming and/or block erases.
Three CE signals are used to enable and disable the device. A unique CE logic design
(see Table 17, “Chip Enable Truth Table for 32-, 64-, 128-Mb” on page 30) reduces
decoder logic typically required for multi-chip designs. External logic is not required
when designing a single chip, a dual chip, or a 4-chip miniature card or SIMM module.
The BYTE# signal allows either x8 or x16 read/writes to the device:
• BYTE#-low enables 8-bit mode; address A0 selects between the low byte and high
byte.
• BYTE#-high enables16-bit operation; address A1 becomes the lowest order
address and address A0 is not used (don’t care).
Figure 1, “Memory Block Diagram for 32-, 64-, 128-Mbit” on page 11 shows a device
block diagram.
When the device is disabled (see Table 17, “Chip Enable Truth Table for 32-, 64-, 128Mb” on page 30), with CEx at VIH and RP# at VIH, the standby mode is enabled. When
RP# is at VIL, a further power-down mode is enabled which minimizes power
consumption and provides write protection during reset. A reset time (tPHQV) is
required from RP# going high until data outputs are valid. Likewise, the device has a
wake time (tPHWL) from RP#-high until writes to the CUI are recognized. With RP# at
VIL, the WSM is reset and the Status Register is cleared.
Datasheet
10
Jan 2011
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
2.1
Figure 1:
Jan 2011
208032-03
Block Diagram
Memory Block Diagram for 32-, 64-, 128-Mbit
Datasheet
11
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
J3 65 nm SBC Memory Map
A [23:0]:128 Mbit
A [22:0]: 64Mbit
A [21:0]: 32Mbit
3FFFFFh
3E0000h
03FFFFh
020000h
01FFFFh
000000h
128 - KB Block
63
7F0000h
3FFFFFh
3F0000h
128 - KB Block
31
128 - KB Block
1
128 - KB Block
0
Byte-Wide (x 8 ) Mode
Datasheet
12
7FFFFFh
1FFFFFh
1F0000h
01FFFFh
010000h
00FFFFh
000000h
64- KW Block
127
64- KW Block
63
64- KW Block
31
64- KW Block
1
64- KW Block
0
128- Mbit
7E0000h
127
128- Mbit
7FFFFFh
128 - KB Block
64- Mbit
FE0000h
32- Mbit
FFFFFFh
A [23:1]:128 Mbit
A [22:1]: 64Mbit
A [21:1]: 32Mbit
64- Mbit
Figure 2:
Memory Map
32- Mbit
2.2
Word-Wide (x16) Mode
Jan 2011
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
3.0
Package Information
3.1
56-Lead TSOP Package for 32-, 64-, 128-Mbit
Figure 3:
56-Lead TSOP Package Mechanical
Z
A2
See Note 2
See Notes 1 and 3
Pin 1
e
See Detail B
E
Y
D1
A1
D
Seating
Plane
See Detail A
A
Detail A
Detail B
C
0
b
L
Notes:
1.
One dimple on package denotes Pin 1.
2.
If two dimples, then the larger dimple denotes Pin 1.
3.
Pin 1 will always be in the upper left corner of the package, in reference to the product mark.
Table 1:
56-Lead TSOP Dimension Table
Millimeters
Parameter
Inches
Symbol
Min
Nom
Max
Min
Nom
Max
Package Height
A
—
—
1.200
—
—
0.047
Standoff
A1
0.050
—
—
0.002
—
—
Package Body Thickness
A2
0.965
0.995
1.025
0.038
0.039
0.040
Lead Width1
b
0.170
0.220
0.270
0.0067
0.0087
0.0106
Lead Thickness
c
0.100
0.150
0.200
0.004
0.006
0.008
Package Body Length
D1
18.200
18.400
18.600
0.717
0.724
0.732
Package Body Width
E
13.800
14.000
14.200
0.543
0.551
0.559
Lead Pitch
e
—
0.500
—
—
0.0197
—
Terminal Dimension
D
19.800
20.00
20.200
0.780
0.787
0.795
Lead Tip Length
L
0.500
0.600
0.700
0.020
0.024
0.028
Jan 2011
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Datasheet
13
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 1:
56-Lead TSOP Dimension Table
Millimeters
Parameter
Inches
Symbol
Min
Nom
Max
Min
Nom
Max
Lead Count
N
—
56
—
—
56
—
Lead Tip Angle
θ
0°
3°
5°
0°
3°
5°
Seating Plane Coplanarity
Y
—
—
0.100
—
—
0.004
Lead to Package Offset
Z
0.150
0.250
0.350
0.006
0.010
0.014
1. For legacy lead width, 0.15mm (Typ), 0.10mm (Min), 0.20mm (Max).
3.2
Figure 4:
64-Ball Easy BGA Package for 32-, 64-, 128-Mbit
64-Ball Easy BGA Mechanical Specifications
Ball A1
Corner
Ball A1
Corner
D
1
2
3
4
S1
5
6
7
8
8
A
A
B
B
C
C
D
7
6
5
4
3
2
1
S2
D
E
E
E
F
F
G
G
H
H
e
b
Bottom View - Ball Side Up
Top View - Plastic Backside
Complete Ink Mark Not Shown
A1
A2
A
Seating
Y
Plane
Table 2:
Easy BGA Package Dimensions Table (Sheet 1 of 2)
Millimeters
Parameter
Package Height
A
Ball Height
A1
Package Body Thickness
A2
Ball (Lead) Width
b
Datasheet
14
Inches
Symbol
Min
Nom
Max
Min
Nom
Max
—
—
1.200
—
—
0.0472
0.250
—
—
0.0098
—
—
—
0.780
—
—
0.0307
—
0.310
0.410
0.510
0.012
0.016
0.020
Jan 2011
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 2:
Easy BGA Package Dimensions Table (Sheet 2 of 2)
Millimeters
Parameter
Inches
Symbol
Min
Nom
Max
Min
Nom
Max
Package Body Width
D
9.900
10.000
10.100
0.3898
0.3937
0.3976
Package Body Length
E
12.900
13.000
13.100
0.5079
0.5118
0.5157
Pitch
e
—
1.000
—
—
0.0394
—
Ball (Lead) Count
N
—
64
—
—
64
—
Seating Plane Coplanarity
Y
—
—
0.100
—
—
0.0039
Corner to Ball A1 Distance Along D
S1
1.400
1.500
1.600
0.0551
0.0591
0.0630
Corner to Ball A1 Distance Along E
S2
2.900
3.000
3.100
0.1142
0.1181
0.1220
Jan 2011
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Datasheet
15
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
4.0
Ballouts/Pinouts and Signal Descriptions
J3 65 nm SBC is available in two package types. All densities of the J3 65 nm SBC
devices are supported on both 64-ball Easy BGA and 56-lead Thin Small Outline
Package (TSOP) packages. The figures below show the ballouts/Pinouts.
4.1
Easy BGA Ballout for 32-, 64-, 128-Mbit
Figure 5:
Easy BGA Ballout (32/64/128 Mbit)
1
2
3
4
5
6
7
8
7
8
5
6
4
3
2
1
A
A
A1
A6
A8
VPEN
A13
VCC
A18
(2)
A22
(2)
A22
A18
A13
VCC
VPEN
A8
A6
A1
B
B
A2
VSS
A9
CE0
A14
RFU
A19
CE1
CE1
A19
RFU
A14
CE0
A9
VSS
A2
A3
A7
A10
A12
A15
RFU
A20
A21
A21
A20
RFU
A15
A12
A10
A7
A3
A4
A5
A11
RP#
RFU
RFU
A16
A17
A17
RFU
RFU
RP#
A11
A5
A4
DQ8
DQ1
DQ9
DQ3
DQ4
RFU
DQ15
STS
STS DQ15
RFU
DQ4
DQ9
DQ1
BYTE# DQ0
DQ10
DQ11 DQ12
RFU
RFU
OE#
OE#
RFU
RFU
DQ12
DQ11 DQ10
DQ0
VCCQ
DQ6
DQ14
WE#
WE#
DQ14
DQ6
DQ5
C
C
D
D
A16
E
E
DQ3
DQ8
F
F
BYTE#
G
G
(3)
A23
(1)
A0
DQ2
DQ5
VCCQ
DQ2
(1)
A0
(3)
A23
H
H
CE2
RFU
VCC
VSS
DQ13
VSS
DQ7
(4)
A24
(4)
A24
DQ7
VSS
DQ13
Notes:
1.
2.
3.
4.
VCC
RFU
CE2
Easy BGA
Easy BGA
Top View – Ball Side Down
VSS
Bottom View – Ball Side Up
A0 is the least significant address bit.
A22 is valid for 64-Mbit density and above. On 32-Mbit, it is a no-connect (NC).
A23 is valid for 128-Mbit density. On 32- and 64-Mbit, it is a no-connect (NC).
A24 is a no connect (NC) on 128-, 64-, 32- Mbit, reserved for 256-Mbit.
Datasheet
16
Jan 2011
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
4.2
56-Lead TSOP Package Pinout for 32-, 64-,128-Mbit
Figure 6:
56-Lead TSOP Package Pinout (32/64/128 Mbit)
(3)
1
2
56
A24(5)
55
WE#
3
54
OE#
4
5
STS
A19
53
52
A18
6
51
DQ7
A17
7
50
DQ14
A16
8
9
10
49
48
47
DQ6
VCC(1)
A22
CE1
A21
A20
A15
A14
A12
11
12
13
CE0
14
VPEN
15
RP#
16
A11
17
A13
®
Numonyx Embedded Flash Memory J3
56-Lead TSOP Package
14 mm x 20 mm
Top View
46
DQ15
VSS
DQ13
DQ5
45
44
43
DQ12
42
VSS
41
40
DQ11
DQ10
DQ4
VCCQ
DQ3
A10
18
39
A9
19
38
DQ2
20
21
37
36
VCC
A7
A6
22
35
DQ1
23
34
DQ8
A5
24
33
DQ0
A4
25
32
A0
A3
26
31
BYTE#
A2
27
30
A23
A1
28
29
CE2
A8
VSS
Notes:
1.
2.
3.
4.
5.
DQ9
(2)
(4)
No internal connection for pin 9; it may be driven or floated. For legacy designs, the pin can be tied to VCC.
A0 is the least significant address bit.
A22 is valid for 64-Mbit density and above. On 32-Mbit, it is a no-connect (NC).
A23 is valid for 128-Mbit density. On 32- and 64-Mbit, it is a no-connect (NC).
A24 is a no connect (NC) on 128-, 64-, 32- Mbit, reserved for 256-Mbit.
Jan 2011
208032-03
Datasheet
17
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
4.3
Signal Descriptions
Table 3 lists the active signals used on J3 65 nm SBC and provides a description of
each.
Table 3:
Signal Descriptions for J3 65 nm SBC
Symbol
Type
Name and Function
A0
Input
BYTE-SELECT ADDRESS: Selects between high and low byte when the device is in x8 mode. This
address is latched during a x8 program cycle. Not used in x16 mode (i.e., the A0 input buffer is
turned off when BYTE# is high).
A[MAX:1]
Input
ADDRESS INPUTS: Inputs for addresses during read and program operations. Addresses are
internally latched during a program cycle:
32-Mbit — A[21:1]
64-Mbit— A[22:1]
128-Mbit — A[23:1]
DQ[7:0]
Input/
Output
LOW-BYTE DATA BUS: Inputs data during buffer writes and programming, and inputs commands
during CUI writes. Outputs array, CFI, identifier, or status data in the appropriate read mode. Data
is internally latched during write operations.
DQ[15:8]
Input/
Output
HIGH-BYTE DATA BUS: Inputs data during x16 buffer writes and programming operations.
Outputs array, CFI, or identifier data in the appropriate read mode; not used for Status Register
reads. Data is internally latched during write operations in x16 mode. D[15:8] float in x8 mode.
CE[2:0]
Input
CHIP ENABLE: Activates the 32-, 64-, 128-Mbit devices’ control logic, input buffers, decoders, and
sense amplifiers. When the device is de-selected (see Table 17, “Chip Enable Truth Table
for 32-, 64-, 128-Mb” on page 30), power reduces to standby levels.
All timing specifications are the same for these three signals. Device selection occurs with the first
edge of CE0, CE1, or CE2 that enables the device. Device deselection occurs with the first edge of
CE0, CE1, or CE2 that disables the device (see Table 17, “Chip Enable Truth Table for
32-, 64-, 128-Mb” on page 30).
RP#
Input
RESET: RP#-low resets internal automation and puts the device in power-down mode. RP#-high
enables normal operation. Exit from reset sets the device to read array mode. When driven low,
RP# inhibits write operations which provides data protection during power transitions.
OE#
Input
OUTPUT ENABLE: Activates the device’s outputs through the data buffers during a read cycle.
OE# is active low.
WE#
Input
WRITE ENABLE: Controls writes to the CUI, the Write Buffer, and array blocks. WE# is active low.
Addresses and data are latched on the rising edge of WE#.
STS
Open Drain
Output
STATUS: Indicates the status of the internal state machine. When configured in level mode
(default), it acts as a RY/BY# signal. When configured in one of its pulse modes, it can pulse to
indicate program and/or erase completion. For alternate configurations of the Status signal, see the
Configurations command and Section 9.7, “Status Signal” on page 41. STS is to be tied
to VCCQ with a pull-up resistor.
BYTE#
Input
BYTE ENABLE: BYTE#-low places the device in x8 mode; data is input or output on D[7:0], while
D[15:8] is placed in High-Z. Address A0 selects between the high and low byte. BYTE#-high places
the device in x16 mode, and turns off the A0 input buffer, the address A1 becomes the lowest-order
address bit.
VPEN
Input
ERASE / PROGRAM / BLOCK LOCK ENABLE: For erasing array blocks, programming data, or
configuring lock-bits.
With VPEN ≤ VPENLK, memory contents cannot be altered.
VCC
Power
CORE Power Supply: Core (logic) source voltage. Writes to the flash array are inhibited when VCC
≤ VLko.
Caution: Device operation at invalid Vcc voltages should not be attempted.
VCCQ
Power
I/O Power Supply: Power supply for Input/Output buffers.This ball can be tied directly to VCC.
VSS
Supply
GROUND: Ground reference for device logic voltages. Connect to system ground.
NC
—
No Connect: Lead is not internally connected; it may be driven or floated.
—
Reserved for Future Use: Balls designated as RFU are reserved by Numonyx for future device
functionality and enhancement.
RFU
Datasheet
18
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent
damage. These are stress ratings only.
NOTICE: This document contains information available at the time of its release. The specifications are subject to change without
notice. Verify with your local Numonyx sales office that you have the latest datasheet before finalizing a design.
Table 4:
Absolute Maximum Ratings
Parameter
Min
Max
Unit
Notes
–40
+85
°C
—
Storage Temperature
–65
+125
°C
—
VCC Voltage
–2.0
+5.6
V
2
VCCQ Voltage
–2.0
+5.6
V
2
Voltage on any input/output signal (except VCC, VCCQ)
–2.0
VCCQ (max) + 2.0
V
1
—
100
mA
3
Temperature under Bias Expanded (TA, Ambient)
ISH Output Short Circuit Current
Notes:
1.
Voltage is referenced to VSS. During infrequent non-periodic transitions, the voltage potential between VSS and input/
output pins may undershoot to –2.0 V for periods < 20 ns or overshoot to VCCQ (max) + 2.0 V for periods < 20 ns.
2.
During infrequent non-periodic transitions, the voltage potential between VCC and the supplies may undershoot to –2.0
V for periods < 20 ns or VSUPPLY (max) + 2.0 V for periods < 20 ns.
3.
Output shorted for less than one second. No more than one output pin/ball can be shorted at a time.
5.2
Operating Conditions
Warning:
Operations beyond the “Operating Conditions” is not recommended and extended
exposure beyond the “Operating Conditions” may affect device reliability.
Table 5:
Symbol
Temperature and VCC Operating Condition
Parameter
Min
Max
Unit
Test Condition
TA
Operating Temperature
-40.0
+85
°C
Ambient Temperature
VCC
VCC Supply Voltage
2.70
3.6
V
—
VCCQ
VCCQ Supply Voltage
2.70
3.6
V
—
5.3
Power-Up/Down
This section provides an overview of system level considerations with regards to the
flash device. It includes a brief description of power-up/down sequence and decoupling
design considerations.
5.3.1
Power-Up/Down Sequence
To prevent conditions that could result in spurious program or erase operations, the
power-up/power-down sequence shown in Table 6 is recommended. For DC voltage
characteristics refer to Table 8. Note that each power supply must reach its minimum
voltage range before applying/removing the next supply voltage.
Jan 2011
208032-03
Datasheet
19
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 6:
Power-Up/Down Sequence
Power Supply
Voltage
VCC(min)
Note:
1.
Power-Up Sequence
1st
VCCQ(min)
2nd
VPEN(min)
3rd
1st
2nd(1)
1st(1)
Power-Down Sequence
3rd
Sequencing not
required(1)
2nd
2nd
1st
2nd
1st(1)
2nd(1)
Sequencing not
required(1)
1st
Power supplies connected or sequenced together.
Device inputs must not be driven until all supply voltages reach their minimum range.
RP# should be low during power transitions.
5.3.2
Power Supply Decoupling
When the device is enabled, many internal conditions change. Circuits are energized,
charge pumps are switched on, and internal voltage nodes are ramped. All of this
internal activities produce transient signals. The magnitude of the transient signals
depends on the device and system loading. To minimize the effect of these transient
signals, a 0.1 µF ceramic capacitor is required across each VCC/VSS and VCCQ signal.
Capacitors should be placed as close as possible to device connections.
Additionally, for every eight flash devices, a 4.7 µF electrolytic capacitor should be
placed between VCC and VSS at the power supply connection. This 4.7 µF capacitor
should help overcome voltage slumps caused by PCB trace inductance.
5.4
Reset
By holding the flash device in reset during power-up and power-down transitions,
invalid bus conditions may be masked. The flash device enters reset mode when RP# is
driven low. In reset, internal flash circuitry is disabled and outputs are placed in a highimpedance state. After return from reset, a certain amount of time is required before
the flash device is able to perform normal operations. After return from reset, the flash
device defaults to asynchronous page mode. If RP# is driven low during a program or
erase operation, the program or erase operation will be aborted and the memory
contents at the aborted block or address are no longer valid. See Figure 12, “AC
Waveform for Reset Operation” on page 28 for detailed information regarding reset
timings.
Datasheet
20
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
6.0
Electrical Characteristics
6.1
DC Current Specifications
Table 7:
Symbol
DC Current Characteristics
VCCQ
2.7 - 3.6V
VCC
2.7 - 3.6V
Parameter
Test Conditions
Typ
Max
Unit
Notes
ILI
Input and VPEN Load Current
—
±1
μA
VCC = VCC Max; VCCQ = VCCQ Max
VIN = VCCQ or VSS
1
ILO
Output Leakage Current
—
±10
μA
VCC= VCC Max; VCCQ = VCCQ Max
VIN = VCCQ or VSS
1
50
ICCS
ICCD
μA
VCC Power-Down Current
Enable Truth Table for 32-, 64-,
128-Mb” on page 30),
RP# = VCCQ ± 0.2 V
VCC Standby Current
17, “Chip
Enable Truth Table for 32-, 64-,
128-Mb” on page 30), RP# = VIH
2
mA
50
120
μA
RP# = VSS ± 0.2 V, IOUT (STS) = 0 mA
mA
CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ
Max using standard 8 word page mode
reads.
Device is enabled (see Table 17, “Chip
20
—
Enable Truth Table for 32-, 64-,
128-Mb” on page 30)
f = 5 MHz, IOUT = 0 mA
8-Word Page
1,2,3
TTL Inputs, VCC = VCC Max,
Vccq = VccqMax
Device is disabled (see Table
0.71
15
ICCR
120
CMOS Inputs, VCC = VCC Max; Vccq =
VccqMax
Device is disabled (see Table 17, “Chip
CMOS Inputs,VCC = VCC Max, VCCQ = VCCQ
Max using standard 8 word page mode
reads.
Device is enabled (see Table 17, “Chip
30
54
mA
35
60
mA
CMOS Inputs, VPEN = VCC
40
70
mA
TTL Inputs, VPEN = VCC
35
70
mA
CMOS Inputs, VPEN = VCC
40
80
mA
TTL Inputs, VPEN = VCC
—
10
mA
Device is enabled (see Table 17, “Chip
Enable Truth Table for 32-, 64-,
128-Mb” on page 30)
1,3
Enable Truth Table for 32-, 64-,
128-Mb” on page 30)
f = 33 MHz, IOUT = 0 mA
ICCW
VCC Program or Set Lock-Bit Current
ICCE
ICCBC
VCC Block Erase or VCC Blank Check or
Clear Block Lock-Bits Current
ICCWS
ICCES
VCC Program Suspend or Block Erase
Suspend Current
1,4
1,4
1,5
Notes:
1.
All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds).
Contact Numonyx or your local sales office for information about typical specifications.
2.
Includes STS.
3.
CMOS inputs are either VCC ± 0.2 V or VSS ± 0.2 V. TTL inputs are either VIL or VIH.
4.
Sampled, not 100% tested.
5.
ICCWS and ICCES are specified with the device selected. If the device is read or written while in erase suspend mode, the
device’s current draw is ICCR and ICCWS.
Jan 2011
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Datasheet
21
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
6.2
DC Voltage specifications
Table 8:
DC Voltage Characteristics
Symbol
VCCQ
2.7 - 3.6 V
VCC
2.7 - 3.6 V
Parameter
Min
Test Conditions
Max
Notes
Unit
VIL
Input Low Voltage
–0.5
0.8
V
—
2, 5, 6
VIH
Input High Voltage
2.0
VCCQ + 0.5
V
—
2, 5, 6
—
0.4
V
VCC = VCCMin
VCCQ = VCCQ Min
IOL = 2 mA
Output Low Voltage
VOL
VOH
—
0.2
V
VCC = VCCMin
VCCQ = VCCQ Min
IOL = 100 µA
0.85 × VCCQ
—
V
VCC = VCCMIN
VCCQ = VCCQ Min
IOH = –2.5 mA
VCC = VCCMIN
VCCQ = VCCQ Min
IOH = –100 µA
Output High Voltage
VPENLK
VPEN Lockout during Program,
Erase and Lock-Bit Operations
VPENH
VPEN during Block Erase, Program,
or Lock-Bit Operations
VLKO
VCC Lockout Voltage
1, 2
1, 2
VCCQ – 0.2
—
V
—
2.2
V
—
2, 3
2.7
3.6
V
—
3
—
2.0
V
—
4
Notes:
1.
Includes STS.
2.
Sampled, not 100% tested.
3.
Block erases, programming, and lock-bit configurations are inhibited when VPEN ≤ VPENLK, and not guaranteed in the
range between VPENLK (max) and VPENH (min), and above VPENH (max).
4.
Block erases, programming, and lock-bit configurations are inhibited when VCC ≤ VLKO, and not guaranteed in the range
between VLKO and VCC (min), and above VCC (max).
5.
Includes all operational modes of the device.
6.
Input/Output signals can undershoot to -1.0V referenced to VSS and can overshoot to VCCQ + 1.0V for duration of 2ns or
less, the VCCQ valid range is referenced to VSS.
6.3
Capacitance
Table 9:
Capacitance
Symbol
Parameter1
Type
Max
Unit
Condition2
CIN
Input Capacitance
6
7
pF
VIN = 0.0 V
COUT
Output Capacitance
4
5
pF
VOUT = 0.0 V
Notes:
1.
Sampled, not 100% tested.
2.
TA = -40 °C to +85 °C, VCC= VCCQ= 0 to 3.6 V.
Datasheet
22
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
7.0
AC Characteristics
Timing symbols used in the timing diagrams within this document conform to the
following convention.
Figure 7:
Timing Signal Naming Convention
t
E L Q V
Source Signal
Target State
Source State
Target Signal
Table 10: Timing Signal Name Decoder
Signal
Code
State
Code
Address
A
High
H
Data - Read
Q
Low
L
Data - Write
D
High-Z
Z
Chip Enable (CE)
E
Low-Z
X
Output Enable (OE#)
G
Valid
V
Write Enable (WE#)
W
Invalid
I
Status (STS)
R
Reset (RP#)
P
Byte Enable (BYTE#)
F
Erase/Program/Block Lock
Enable (VPEN)
V
Note:
Jan 2011
208032-03
Exceptions to this convention include tACC and tAPA. tACC is a generic timing symbol that
refers to the aggregate initial-access delay as determined by tAVQV, tELQV, and tGLQV
(whichever is satisfied last) of the flash device. tAPA is specified in the flash device’s
data sheet, and is the address-to-data delay for subsequent page-mode reads.
Datasheet
23
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
7.1
Read Specifications
Table 11: Read Operations
Asynchronous Specifications VCC = 2.7 V–3.6 V (3) and VCCQ = 2.7 V–3.6 V(3)
#
Sym
Parameter
R1
tAVAV
Read/Write Cycle Time
R2
tAVQV
Address to Output Delay
R3
tELQV
CEX to Output Delay
R4
tGLQV
OE# to Non-Array Output Delay
Density
All
32 Mbit
R5
tPHQV
RP# High to Output Delay
Min
Max
Unit
Notes
75
—
ns
1,2
—
75
ns
1,2
—
75
ns
1,2
—
25
ns
1,2,4
—
150
64 Mbit
—
180
128 Mbit
—
210
1,2
ns
1,2
1,2
R6
tELQX
CEX to Output in Low Z
0
—
ns
1,2,5
R7
tGLQX
OE# to Output in Low Z
0
—
ns
1,2,5
R8
tEHQZ
CEX High to Output in High Z
—
25
ns
1,2,5
R9
tGHQZ
OE# High to Output in High Z
—
15
ns
1,2,5
R10
tOH
Output Hold from Address, CEX, or OE#
Change, Whichever Occurs First
0
—
ns
1,2,5
—
10
ns
1,2,5
R11
tELFL/tELFH
CEX Low to BYTE# High or Low
All
R12
tFLQV/tFHQV
BYTE# to Output Delay
—
1
µs
1,2
R13
tFLQZ
BYTE# to Output in High Z
—
1
µs
1,2,5
R14
tEHEL
CEx High to CEx Low
0
—
ns
1,2,5
R15
tAPA
Page Address Access Time
—
25
ns
5, 6
R16
tGLQV
OE# to Array Output Delay
—
25
ns
1,2,4
Notes:
1.
CEX low is defined as the combination of pins CE0, CE1 and CE2 that enable the device. CEX high is defined as the
combination of pins CE0, CE1, and CE2 that disable the device (see Table 17, “Chip Enable Truth Table for 32, 64-, 128-Mb” on page 30).
2.
See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
3.
OE# may be delayed up to tELQV-tGLQV after the falling edge of CEX (see note 1 and Table 17, “Chip Enable Truth
Table for 32-, 64-, 128-Mb” on page 30) without impact on tELQV.
4.
See Figure 13, “AC Input/Output Reference Waveform” on page 29 and Figure 14, “Transient
Equivalent Testing Load Circuit” on page 29 for testing characteristics.
5.
Sampled, not 100% tested.
6.
For devices configured to standard word/byte read mode, R15 (tAPA) will equal R2 (tAVQV).
Datasheet
24
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Figure 8:
Single-Word Asynchronous Read Waveform
R1
R2
Address [A]
R8
R3
CEx [E]
R9
R4
OE # [G]
WE# [W]
R7
R10
R6
DQ[15:0] [Q]
R13
R11
R12
BYTE# [F]
R5
RP# [P ]
Notes:
1.
CEX low is defined as the combination of pins CE0, CE1, and CE2 that enable the device. CEX high is defined as the
combination of pins CE0, CE1, and CE2 that disable the device (see Table 17, “Chip Enable Truth Table for 32, 64-, 128-Mb” on page 30).
2.
When reading the flash array a faster tGLQV (R16) applies. For non-array reads, R4 applies (i.e., Status Register reads,
query reads, or device identifier reads).
Figure 9:
8-Word Asynchronous Page Mode Read
R1
R2
A[MAX :4] [A]
000
A [3:1] [A]
001
110
111
R3
CEx [E]
R4
OE # [G]
R7
WE# [W]
R10
R15
1
DQ[15:0] [Q]
R8
R10
R6
2
R9
7
8
R5
RP# [P]
BYTE # [F]
Notes:
1.
CEX low is defined as the combination of pins CE0, CE1, and CE2 that enable the device. CEX high is defined as the
combination of pins CE0, CE1, and CE2 that disable the device (see Table 17, “Chip Enable Truth Table for
, 64-, 128-Mb” on page 30).
2.
In this diagram, BYTE# is asserted high.
Jan 2011
208032-03
32-
Datasheet
25
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 12: Write Operations
#
Symbol
W1
tPHWL (tPHEL)
Parameter
RP# High Recovery to WE# (CEX) Going Low
Density
Valid for All
Speeds
Min
Max
32 Mbit
150
—
64 Mbit
180
—
128 Mbit
210
—
Unit
Notes
1,2,3,4
W2
tELWL (tWLEL)
W3
tWP
W4
tDVWH (tDVEH)
Data Setup to WE# (CEX) Going High
50
—
1,2,3,6
W5
tAVWH (tAVEH)
Address Setup to WE# (CEX) Going High
55
—
1,2,3,6
W6
tWHEH (tEHWH)
CEX (WE#) Hold from WE# (CEX) High
0
—
W7
tWHDX (tEHDX)
Data Hold from WE# (CEX) High
0
—
W8
tWHAX (tEHAX)
Address Hold from WE# (CEX) High
W9
tWPH
W11
tVPWH (tVPEH)
VPEN Setup to WE# (CEX) Going High
W12
tWHGL (tEHGL)
Write Recovery before Read
W13
tWHRL (tEHRL)
WE# (CEX) High to STS Going Low
—
500
1,2,3,9
—
1,2,3,4,
9,10
W15
tQVVL
CEX (WE#) Low to WE# (CEX) Going Low
Write Pulse Width
Write Pulse Width High
VPEN Hold from Valid SRD, STS Going High
All
0
—
1,2,3,5
60
—
1,2,3,5
ns
1,2,3
1,2,3
0
—
1,2,3
30
—
1,2,3,7
0
—
1,2,3,4
35
—
1,2,3,8
0
Notes:
1.
CEX low is defined as the combination of pins CE0, CE1, and CE2 that enable the device. CEX high is defined as the
combination of pins CE0, CE1, and CE2 that disable the device (see Table 17, “Chip Enable Truth Table for
32-, 64-, 128-Mb” on page 30).
2.
Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as during
read-only operations. Refer to AC Characteristics–Read-Only Operations.
3.
A write operation can be initiated and terminated with either CEX or WE#.
4.
Sampled, not 100% tested.
5.
Write pulse width (tWP) is defined from CEX or WE# going low (whichever goes low last) to CEX or WE# going high
(whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH.
6.
Refer to Table 18, “Enhanced Configuration Register” on page 32 for valid AIN and DIN for block erase,
program, or lock-bit configuration.
7.
Write pulse width high (tWPH) is defined from CEX or WE# going high (whichever goes high first) to CEX or WE# going
low (whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.
8.
For array access, tAVQV is required in addition to tWHGL for any accesses after a write.
9.
STS timings are based on STS configured in its RY/BY# default mode.
10.
VPEN should be held at VPENH until determination of block erase, program, or lock-bit configuration success (SR[5:3,1]
= 0).
Datasheet
26
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Figure 10: Asynchronous Write Waveform
W5
W8
Address [A]
W6
CEx (WE#) [E (W)]
W2
W3
W9
WE# (CEx) [W (E)]
OE# [G]
W4
W7
D
DATA [D/Q ]
W13
STS [R]
W1
RP# [P]
W11
VPEN [V]
Figure 11: Asynchronous Write to Read Waveform
W5
W8
Address [A]
W6
CEx [E]
W2
W3
WE# [W]
W12
OE # [G]
W4
W7
D
DATA [D/Q]
W1
RP# [P]
W11
VPEN [V ]
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Datasheet
27
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
7.2
Program, Erase, Block-Lock Specifications
Table 13: Configuration Performance
#
Symbol
Parameter
W200
tPROG/W
W250
tPROG
W501
tERS/AB
Block Erase Time
W650
tlks
W651
tlkc
Program Time
Single word
Typ
Max
Unit
Notes
40
175
µs
1,2,3,4,6
Aligned 16 Words BP Time (32 Bytes)
128
654
µs
1,2,3,4,5,6
Aligned 128 Words BP Time (256 Bytes)
400
2000
µs
1,2,3,4,5,6
Aligned 256 Words BP Time
720
3600
µs
1,2,3,4,5,6
1.0
4.0
sec
1,2,3,4,6
Set Lock-Bit Time
50
60
µs
1,2,3,4,6
Clear Block Lock-Bits Time
0.5
1
sec
1,2,3,4,6
Buffer Program Time
W600
tSUSP/P
Program Suspend Latency Time to Read
15
20
µs
1,2,3,6
W601
tSUSP/E
Erase Suspend Latency Time to Read
15
20
µs
1,2,3,6
W602
tERS/SUSP
Erase to Suspend
500
—
µs
1,7
W652
tSTS
STS Pulse Width Low Time
500
—
ns
1
W702
tBC/MB
3.2
—
ms
—
blank check
Array Block
Notes:
1.
Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2.
These performance numbers are valid for all speed versions.
3.
Sampled but not 100% tested.
4.
Excludes system-level overhead.
5.
These values are valid when the buffer is full, and the start address is aligned.
6.
Max values are measured at worst case temperature, data pattern and VCC corner within 100K cycles. But for W650, W651,
W600 and W601, the Max value are expressed at +25 °C or -40 °C.
7.
W602 is the typical time between an initial block erase or erase resume command and then a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures.
7.3
Reset Specifications
Figure 12: AC Waveform for Reset Operation
STS (R)
P1
P2
RP# (P)
P3
Vcc
Note:
STS is shown in its default mode (RY/BY#).
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 14: Reset Specifications
#
Symbol
Parameter
Min
Max
Unit
Notes
RP# is asserted during block erase,
program or lock-bit configuration
operation
25
—
µs
1
RP# is asserted during read
tPLPH
RP# Pulse Low Time
(If RP# is tied to VCC, this
specification is not
applicable)
100
—
ns
1
P2
tPHRH
RP# High to Reset during Block Erase, Program, or Lock-Bit
Configuration
—
100
ns
1,2
P3
tVCCPH
Vcc Power Valid to RP# de-assertion (high)
60
—
µs
—
P1
Notes:
1.
These specifications are valid for all product versions (packages and speeds).
2.
A reset time, tPHQV, is required from the latter of STS (in RY/BY# mode) or RP# going high until outputs are valid.
7.4
AC Test Conditions
Figure 13: AC Input/Output Reference Waveform
VCCQ
Input
VCCQ/2
Test Points
VCCQ/2
Output
0.0
Note:
AC test inputs are driven at VCCQ for a Logic "1" and 0.0 V for a Logic "0." Input timing begins, and output timing ends, at
VCCQ/2 V (50% of VCCQ). Input rise and fall times (10% to 90%) < 5 ns.
Figure 14: Transient Equivalent Testing Load Circuit
Device
Under Test
Note:
Out
CL
CL Includes Jig Capacitance
Table 15: Test Configuration
Jan 2011
208032-03
Test Configuration
CL (pF)
VCCQ = VCCQMIN
30
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29
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
8.0
Bus Interface
This section provides an overview of Bus operations. The on-chip Write State Machine
(WSM) manages all erase and program algorithms. The system CPU provides control of
all in-system read, write, and erase operations through the system bus. All bus cycles
to or from the flash memory conform to standard microprocessor bus cycles. Table 16
summarizes the necessary states of each control signal for different modes of
operations.
Table 16: Bus Operations
RP#
CEx(1)
OE#(2)
WE#(2)
VPEN
DQ15:0(3)
STS
(Default
Mode)
Notes
Async., Status, Query and
Identifier Reads
VIH
Enabled
VIL
VIH
X
DOUT
High Z
4,6
Output Disable
VIH
Enabled
VIH
VIH
X
High Z
High Z
—
Standby
VIH
Disabled
X
X
X
High Z
High Z
—
Reset/Power-down
VIL
X
X
X
X
High Z
High Z
—
Command Writes
VIH
Enabled
VIH
VIL
X
DIN
High Z
6,7
Array Writes
VIH
Enabled
VIH
VIL
VPENH
X
VIL
5,8
Mode
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
See Table 17 for valid CEx configurations.
OE# and WE# should never be asserted simultaneously. If done so, OE# overrides WE#.
DQ refers to DQ[7:0] when BYTE# is low and DQ[15:0] if BYTE# is high.
Refer to DC characteristics. When VPEN ≤ VPENLK, memory contents can be read but not altered.
X should be VIL or VIH for the control pins and VPENLK or VPENH for VPEN. For outputs, X should be VOL or VOH.
In default mode, STS is VOL when the WSM is executing internal block erase, program, or a lock-bit configuration
algorithm. It is VOH (pulled up by an external pull up resistance ≈ 10k) when the WSM is not busy, in block erase suspend
mode (with programming inactive), program suspend mode, or reset power-down mode.
See Section 11.0, “Device Command Codes” on page 47 for valid DIN (user commands) during a Write
operation.
Array writes are either program or erase operations.
Table 17: Chip Enable Truth Table for 32-, 64-, 128-Mb
Note:
CE2
CE1
CE0
DEVICE
VIL
VIL
VIL
Enabled
VIL
VIL
VIH
Disabled
VIL
VIH
VIL
Disabled
VIL
VIH
VIH
Disabled
VIH
VIL
VIL
Enabled
VIH
VIL
VIH
Enabled
VIH
VIH
VIL
Enabled
VIH
VIH
VIH
Disabled
For single-chip applications, CE2 and CE1 can be connected to VSS.
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
8.1
Bus Reads
Reading from flash memory outputs stored information to the processor or chipset, and
does not change any contents. Reading can be performed an unlimited number of
times. Besides array data, other types of data such as device information and device
status are available from the flash.
To perform a bus read operation, CEx (refer to Table 17 on page 30) and OE# must be
asserted. CEx is the device-select control; when active, it enables the flash memory
device. OE# is the data-output control; when active, the addressed flash memory data
is driven onto the I/O bus. For all read states, WE# and RP# must be de-asserted. See
Section 9.2, “Read Operations” on page 35.
8.1.1
Asynchronous Page Mode Read
Unlike J3 130nm devices, J3 65 nm SBC device provides Eight-Word Asynchronous
Page mode only. Array data can be sensed up to eight words (16 Bytes) at a time. This
is the default mode on power-up or reset.
On J3 130nm devices, the Set Enhanced Configuration Register command is used to
enable Eight-Word Page mode upon power-up or reset, however this has no effect on J3
65 nm SBC device anymore.
After the initial access delay, the first word out of the page buffer corresponds to the
initial address. Address bits A[3:1] determine which word is output from the page
buffer for a x16 bus width, and A[3:0] determine which byte is output from the page
buffer for a x8 bus width. Subsequent reads from the device come from the page
buffer. These reads are output on DQ[15:0] for a x16 bus width and DQ[7:0] for a x8
bus width after a minimum delay by changing A[3:1] or A[3:0].
Data can be read from the page buffer multiple times, and in any order.If address bits
A[MAX:4] change at any time, or if CEx# is toggled, the device will sense and load new
data into the page buffer. Asynchronous Page mode is the default read mode on powerup or reset.
To perform a Page mode read after any other operation, the Read Array command must
be issued to read from the flash array. Asynchronous Page mode reads are permitted in
all blocks and are used to access register information. During register access, only one
word is loaded into the page buffer.
8.1.1.1
Enhanced Configuration Register
The Enhanced Configuration Register (ECR) is a volatile storage register that when
addressed by the Set ECR command can select between Four-Word Page mode and
Eight-Word Page mode on J3 130nm devices, however this has no effect on J3 65 nm
SBC device.
The ECR is volatile; all bits will be reset to default values when RP# is deasserted or
power is removed from the device. To modify ECR settings, use the Set ECR command.
The Set ECR command is written along with the configuration register value, which is
placed on the lower 16 bits of the address bus A[16:1]. This is followed by a second
write that confirms the operation and again presents the ECR data on the address bus.
After executing this command, the device returns to Read Array mode.
The ECR is shown in Table 18. 8-word page mode Command Bus-Cycle is captured in
Table 19 for backward compatibility reasons.
Note:
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If the 8-word Asynchronous Page mode is used on J3 65 nm SBC, a Clear Status
Register command must be executed after issuing the Set ECR command.
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 18: Enhanced Configuration Register
Reserved
ECR
15
Page
Length
ECR
14
ECR
13
Reserved
ECR
12
ECR
11
BITS
ECR
10
ECR
9
ECR
8
ECR
7
ECR
6
ECR
5
ECR
4
DESCRIPTION
ECR[15:14]
RFU
ECR.13
•
•
ECR[12:0]
RFU
ECR
3
ECR
2
ECR
1
ECR
0
NOTES
All bits should be set to 0.
“1” = 8-Word Page mode
“0” = 8-Word Page mode (Default)
Either “1” or “0” is for 8-word sense in page
mode.
All bits should be set to 0.
Table 19: Asynchronous 8-Word Page Mode Command Bus-Cycle Definition
Command
Set Enhanced Configuration
Register (Set ECR)
First Bus Cycle
Second Bus Cycle
Bus
Cycles
Required
Oper
Addr(1)
Data
Oper
Addr(1)
Data
2
Write
ECD
0060h
Write
ECD
0004h
1. ECD = Enhanced Configuration Register Data
8.1.2
Output Disable
With CEx asserted, and OE# at a logic-high level (VIH), the device outputs are disabled.
Output signals DQ[15:0] are placed in a high-impedance state.
8.2
Bus Writes
Writing or Programming to the device, is where the host writes information or data into
the flash device for non-volatile storage. When the flash device is programmed, ‘ones’
are changed to ‘zeros’. ‘Zeros’ cannot be programed back to ‘ones’. To do so, an erase
operation must be performed. Writing commands to the Command User Interface (CUI)
enables various modes of operation, including the following:
• Reading of array data
• Common Flash Interface (CFI) data
• Identifier codes, inspection, and clearing of the Status Register
• Block Erasure, Program, and Lock-bit Configuration (when VPEN = VPENH)
Erasing is performed on a block basis – all flash cells within a block are erased together.
Any information or data previously stored in the block will be lost. Erasing is typically
done prior to programming. The Block Erase command requires appropriate command
data and an address within the block to be erased. The Byte/Word Program command
requires the command and address of the location to be written. Set Block Lock-Bit
commands require the command and block within the device to be locked. The Clear
Block Lock-Bits command requires the command and address within the device to be
cleared.
The CUI does not occupy an addressable memory location. It is written when the device
is enabled and WE# is active. The address and data needed to execute a command are
latched on the rising edge of WE# or CEX (CEX low is defined as the combination of pins
CE0, CE1, and CE2 that enable the device. CEX high is defined as the combination of
pins CE0, CE1, and CE2 that disable the device. See Table 17 on page 30). Standard
microprocessor write timings are used.
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
8.3
Standby
CE0, CE1, and CE2 can disable the device (see Table 17 on page 30) and place it in
standby mode. This manipulation of CEx substantially reduces device power
consumption. DQ[15:0] outputs are placed in a high-impedance state independent of
OE#. If deselected during block erase, program, or lock-bit configuration, the WSM
continues functioning, and consuming active power until the operation completes.
8.3.1
Reset/Power-Down
RP# at VIL initiates the reset/power-down mode.
In read modes, RP#-low deselects the memory, places output drivers in a highimpedance state, and turns off numerous internal circuits. RP# must be held low for a
minimum of tPLPH. Time tPHQV is required after return from reset mode until initial
memory access outputs are valid. After this wake-up interval, normal operation is
restored. The CUI is reset to read array mode and Status Register is set to 0080h.
During Block Erase, Program, or Lock-Bit Configuration modes, RP#-low will abort the
operation. In default mode, STS transitions low and remains low for a maximum time
of tPLPH + tPHRH until the reset operation is complete. Memory contents being altered
are no longer valid; the data may be partially corrupted after a program or partially
altered after an erase or lock-bit configuration. Time tPHWL is required after RP# goes to
logic-high (VIH) before another command can be written.
As with any automated device, it is important to assert RP# during system reset. When
the system comes out of reset, it expects to read from the flash memory. Automated
flash memories provide status information when accessed during Block Erase, Program,
or Lock-Bit Configuration modes. If a CPU reset occurs with no flash memory reset,
proper initialization may not occur because the flash memory may be providing status
information instead of array data. Numonyx Flash memories allow proper initialization
following a system reset through the use of the RP# input. In this application, RP# is
controlled by the same RESET# signal that resets the system CPU.
8.4
Device Commands
When VPEN ≤ VPENLK, only read operations from the Status Register, CFI, identifier
codes, or blocks are enabled. Placing VPENH on VPEN additionally enables block erase,
program, and lock-bit configuration operations. Device operations are selected by
writing specific commands to the Command User Interface (CUI). The CUI does not
occupy an addressable memory location. It is the mechanism through which the flash
device is controlled.
A command sequence is issued in two consecutive write cycles - a Setup command
followed by a Confirm command. However, some commands are single-cycle
commands consisting of a setup command only. Generally, commands that alter the
contents of the flash device, such as Program or Erase, require at least two write cycles
to guard against inadvertent changes to the flash device. Flash commands fall into two
categories: Basic Commands and Extended Commands. Basic commands are
recognized by all Numonyx Flash devices, and are used to perform common flash
operations such as selecting the read mode, programming the array, or erasing blocks.
Extended commands are product-dependant; they are used to perform additional
features such as software block locking. Section 11.0, “Device Command Codes” on
page 47 describes all applicable commands on J3 65 nm SBC device.
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33
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
9.0
Flash Operations
This section describes the operational features of flash memory. Operations are
command-based, wherein command codes are first issued to the device, then the
device performs the desired operation. All command codes are issued to the device
using bus-write cycles (see Chapter 8.0, “Bus Interface”). A complete list of available
command codes can be found in Section 11.0, “Device Command Codes” on page 47.
9.1
Status Register
The Status Register (SR) is an 8-bit, read-only register that indicates device status and
operation errors. To read the Status Register, issue the Read Status Register command.
Subsequent reads output Status Register information on DQ[7:0], and 00h on
DQ[15:8].
SR status bits are set and cleared by the device. SR error bits are set by the device, but
must be cleared using the Clear Status Register command. Upon power-up or exit from
reset, the Status Register defaults to 80h. Page-mode reads are not supported in this
read mode. Status Register contents are latched on the falling edge of OE# or CEX (CEX
low is defined as the combination of pins CE0, CE1, and CE2 that enable the device.
CEX high is defined as the combination of pins CE0, CE1, and CE2 that disable the
device). OE# must toggle to VIH or the device must be disabled before further reads to
update the Status Register latch. The Read Status Register command functions
independently of VPEN voltage.
Table 20 shows Status Register bit definitions.
Table 20: Status Register Bit Definitions
Status Register (SR)
Default Value = 80h
Ready
Status
Erase
Suspend
Status
Erase
Error
Program
Error
Program/
Erase
Voltage
Error
Program
Suspend
Status
Block-Locked
Error
Reserved
7
6
5
4
3
2
1
0
Bit
Name
Description
7
Ready Status
0 = Device is busy. SR[6:0] are invalid (Not driven);
1 = Device is ready. SR[6:0] are valid.
6
Erase Suspend Status
0 = Erase suspend not in effect.
1 = Erase suspend in effect.
5
4
3
Erase Error
Program
Error
Command
Sequence
Error
Program/Erase Voltage Error
SR.5 SR.4
0 0 = Program or erase operation successful.
0 1 = Program error - operation aborted.
1 0 = Erase error - operation aborted.
1 1 = Command sequence error - command aborted.
0 = Within acceptable limits during program or erase operation.
1 = Not within acceptable limits during program or erase operation - Operation
aborted.
2
Program Suspend Status
0 = Program suspend not in effect.
1 = Program suspend in effect.
1
Block-Locked Error
0 = Block NOT locked during program or erase - operation successful.
1 = Block locked during program or erase - operation aborted.
0
Reserved
Reserved
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
9.1.1
Clearing the Status Register
The Status Register (SR) contain Status and error bits which are set by the device. SR
status bits are cleared by the device, however SR error bits are cleared by issuing the
Clear SR command (see Table 21). Resetting the device also clears the SR.
Table 21: Clear Status Register Command Bus-Cycles
Setup Write Cycle
Command
Clear Status Register
Confirm Write Cycle
Address Bus
Data Bus
Address Bus
Data Bus
Device Address
0050h
—
—
Issuing the Clear SR command places the device in Read SR mode.
Note:
Care should be taken to avoid SR ambiguity. If a command sequence error occurs while
in an Erase Suspend condition, the SR will indicate a Command Sequence error by
setting SR.4 and SR.5. When the erase operation is resumed (and finishes), any errors
that may have occurred during the erase operation will be masked by the Command
Sequence error. To avoid this situation, clear the Status Register prior to resuming a
suspended erase operation. The Clear SR command functions independent of the
voltage level on VPEN.
9.2
Read Operations
Four types of data can be read from the device: array data, device information, CFI
data, and device status. Upon power-up or return from reset, the device defaults to
Read Array mode. To change the device’s read mode, the appropriate command must
be issued to the device. Table 22 shows the command codes used to configure the
device for the desired read mode. The following sections describe each read mode.
Table 22: Read Mode Command Bus-Cycles
Command
Setup Write Cycle
Address Bus
Confirm Write Cycle
Data Bus
Address Bus
Data Bus
Read Array
Device Address
00FFh
—
—
Read Status Register
Device Address
0070h
—
—
Read Device Information
Device Address
0090h
—
—
CFI Query
Device Address
0098h
—
—
9.2.1
Read Array
Upon power-up or return from reset, the device defaults to Read Array mode. Issuing
the Read Array command places the device in Read Array mode. Subsequent reads
output array data on DQ[15:0]. The device remains in Read Array mode until a
different read command is issued, or a program or erase operation is performed, in
which case, the read mode is automatically changed to Read Status.
To change the device to Read Array mode while it is programming or erasing, first issue
the Suspend command. After the operation has been suspended, issue the Read Array
command. When the program or erase operation is subsequently resumed, the device
will automatically revert back to Read Status mode.
Note:
Jan 2011
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Issuing the Read Array command to the device while it is actively programming or
erasing causes subsequent reads from the device to output invalid data. Valid array
data is output only after the program or erase operation has finished.
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
The Read Array command functions independent of the voltage level on VPEN.
9.2.2
Read Status Register
Issuing the Read Status Register command places the device in Read Status Register
mode. Subsequent reads output Status Register information on DQ[7:0], and 00h on
DQ[15:8]. The device remains in Read Status Register mode until a different readmode command is issued. Performing a program, erase, or block-lock operation also
changes the device’s read mode to Read Status Register mode.
The Status Register is updated on the falling edge of OE# or CEx, whichever occurs
last. Status Register contents are valid only when SR.7 = 1. When WSM is active, SR.7
indicates the WSM’s state and SR[6:0] are in high-Z state.
The Read Status Register command functions independent of the voltage level on
VPEN.
9.2.3
Read Device Information
Issuing the Read Device Information command places the device in Read Device
Information mode. Subsequent reads output device information on DQ[15:0].
The device remains in Read Device Information mode until a different read command is
issued. Also, performing a program, erase, or block-lock operation changes the device
to Read Status Register mode.
The Read Device Information command functions independent of the voltage level on
VPEN.
9.2.4
CFI Query
The CFI query table contains an assortment of flash product information such as block
size, density, allowable command sets, electrical specifications, and other product
information. The data contained in this table conforms to the CFI protocol.
Issuing the CFI Query command places the device in CFI Query mode. Subsequent
reads output CFI information on DQ[15:0]. The device remains in CFI Query mode until
a different read command is issued, or a program or erase operation is performed,
which changes the read mode to Read Status Register mode.
The CFI Query command functions independent of the voltage level on VPEN.
9.3
Programming Operations
All programming operations require the addressed block to be unlocked, and a valid
VPEN voltage applied throughout the programming operation. Otherwise, the
programming operation will abort, setting the appropriate Status Register error bit(s).
The following sections describe each programming method.
9.3.1
Single-Word/Byte Programming
Array programming is performed by first issuing the Single-Word/Byte Program
command. This is followed by writing the desired data at the desired array address. The
read mode of the device is automatically changed to Read Status Register mode, which
remains in effect until another read-mode command is issued.
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
During programming, STS and the Status Register indicate a busy status (SR.7 = 0).
Upon completion, STS and the Status Register indicate a ready status (SR.7 = 1). The
Status Register should be checked for any errors (SR.4), then cleared.
Note:
Issuing the Read Array command to the device while it is actively programming causes
subsequent reads from the device to output invalid data. Valid array data is output only
after the program operation has finished.
Standby power levels are not be realized until the programming operation has finished.
Also, asserting RP# aborts the programming operation, and array contents at the
addressed location are indeterminate. The addressed block should be erased, and the
data re-programmed. If a Single-Word/Byte program is attempted when the
corresponding block lock-bit is set, SR.1 and SR.4 will be set.
9.3.2
Buffered Programming
Buffered programming operations simultaneously program multiple words/bytes into
the flash memory array, significantly reducing effective word-write/byte-write times.
User-data is first written to a write buffer, then programmed into the flash memory
array in buffer-size increments. For additional details, see the flow chart of the
buffered-programming operation.
Optimal performance and power consumption is realized by aligning the start address
on 256-Word boundaries (i.e., A[8:1] = 00000000b). Crossing a 256-Word boundary
during a buffered programming operation can cause programming time to double.
To perform a buffered programming operation, first issue the Buffered Program setup
command at the desired starting address. The read mode of the device/addressed
partition is automatically changed to Read Status Register mode.
Polling SR.7 determines write-buffer availability (0 = not available, 1 = available). If
the write buffer is not available, re-issue the setup command and check SR.7; repeat
until SR.7 = 1.
Note:
The device defaults to output SR data after the Buffered Programming Setup command
(E8h) is issued. CE# and OE# must be toggled to update Status Register. Don’t issue
the Read SR command (70h), which would be interpreted by the internal state machine
as Buffer Word Count.
Next, issue the word count at the desired starting address. The word count represents
the total number of words to be written into the write buffer, minus one. This value can
range from 00h (one) to a maximum of FFh (256). Exceeding the allowable range
causes an abort.
Note:
The maximum number of bytes in write buffer on CFI region (offset 2Ah, refer Table 41,
“Device Geometry Definition” on page 60) is set to 05h (32 bytes) for backward
compatible reasons. No software change is required on existing applications for both x8
and x16 mode. Applications can optimize the system performance using the maximum
of 256 buffer size. Please contact your sales representatives for questions.
Following the word count, the write buffer is filled with user-data. Subsequent buswrite cycles provide addresses and data, up to the word count. All user-data addresses
must lie between and , otherwise
the WSM continues to run as normal but, user may advertently change the content in
unexpected address locations.
Note:
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User-data is programmed into the flash array at the address issued when filling the
write buffer.
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
After all user-data is written into the write buffer, issue the confirm command. If a
command other than the confirm command is issued to the device, a command
sequence error occurs and the operation aborts.
Note:
After issuing the confirm command, write-buffer contents are programmed into the
flash memory array. The Status Register indicates a busy status (SR.7 = 0) during
array programming.Issuing the Read Array command to the device while it is actively
programming or erasing causes subsequent reads from the device to output invalid
data. Valid array data is output only after the program or erase operation has finished.
Upon completion of array programming, the Status Register indicates ready (SR.7 = 1).
A full Status Register check should be performed to check for any programming errors,
then cleared by using the Clear Status Register command.
Additional buffered programming operations can be initiated by issuing another setup
command, and repeating the buffered programming bus-cycle sequence. However, any
errors in the Status Register must first be cleared before another buffered
programming operation can be initiated.
9.4
Block Erase Operations
Erasing a block changes ‘zeros’ to ‘ones’. To change ones to zeros, a program operation
must be performed (See Section 9.3, “Programming Operations”). Erasing is performed
on a block basis - an entire block is erased each time an erase command sequence is
issued. Once a block is fully erased, all addressable locations within that block read as
logical ones (FFFFh for x16 mode, FFh for x8 mode). Only one block-erase operation
can occur at a time, and is not permitted during a program suspend.
To perform a block-erase operation, issue the Block Erase command sequence at the
desired block address. Table 23 shows the two-cycle Block Erase command sequence.
Table 23: Block-Erase Command Bus-Cycles
Command
Block Erase
Note:
Setup Write Cycle
Confirm Write Cycle
Address Bus
Data Bus
Address Bus
Data Bus
Block Address
0020h
Block Address
00D0h
A block-erase operation requires the addressed block to be unlocked, and a valid
voltage applied to VPEN throughout the block-erase operation. Otherwise, the
operation will abort, setting the appropriate Status Register error bit(s).
The Erase Confirm command latches the address of the block to be erased. The
addressed block is preconditioned (programmed to all zeros), erased, and then verified.
The read mode of the device is automatically changed to Read Status Register mode,
and remains in effect until another read-mode command is issued.
During a block-erase operation, STS and the Status Register indicates a busy status
(SR.7 = 0). Upon completion, STS and the Status Register indicates a ready status
(SR.7 = 1). The Status Register should be checked for any errors, then cleared. If any
errors did occur, subsequent erase commands to the device are ignored unless the
Status Register is cleared.
The only valid commands during a block erase operation are Read Array, Read Device
Information, CFI Query, and Erase Suspend. After the block-erase operation has
completed, any valid command can be issued.
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Note:
Issuing the Read Array command to the device while it is actively erasing causes
subsequent reads from the device to output invalid data. Valid array data is output only
after the block-erase operation has finished.
Standby power levels are not be realized until the block-erase operation has finished.
Also, asserting RP# aborts the block-erase operation, and array contents at the
addressed location are indeterminate. The addressed block should be erased before
programming within the block is attempted.
9.5
Blank Check
The Blank Check operation determines whether a specified array block is blank (i.e.
completely erased). Without Blank Check, Block Erase would be the only other way to
ensure a block is completely erased. Blank Check is especially useful in the case of
erase operation interrupted by a power loss event.
Blank Check can apply to only one block at a time, and no operations other than Status
Register Reads are allowed during Blank Check (e.g. reading array data, program,
erase etc.). Suspend and resume operations are not supported during Blank Check, nor
is Blank Check supported during any suspended operations.
Blank Check operations are initiated by writing the Block Blank Check command to the
block address. Next, the Blank Check Confirm command is issued along with the same
block address. When a successful command sequence is entered, the device
automatically enters the Read Status State. The WSM then reads the entire specified
block, and determines whether any bit in the block is programmed or over-erased.
The status register can be examined for Blank Check progress and errors by reading
any address within the block being accessed. During a blank check operation, the
Status Register indicates a busy status (SR.7 = 0). Upon completion, the Status
Register indicates a ready status (SR.7 = 1). The Status Register should be checked for
any errors, and then cleared. If the Blank Check operation fails, which means the block
is not completely erased, the Status Register bit SR.5 will be set (“1”). CE# or OE#
toggle (during polling) updates the Status Register.
The device remains in Status Register Mode until another command is written to the
device. After examining the Status Register, it should be cleared by the Clear Status
Register command before issuing a new command. Any command can follow once the
Blank Check command is complete.
9.6
Suspend and Resume
An erase or programming operation can be suspended to perform other operations, and
then subsequently resumed. Table 24 shows the Suspend and Resume command buscycles.
Note:
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All erase and programming operations require the addressed block to remain unlocked
with a valid voltage applied to VPEN throughout the suspend operation. Otherwise, the
block-erase or programming operation will abort, setting the appropriate Status
Register error bit(s). Also, asserting RP# aborts suspended block-erase and
Datasheet
39
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
programming operations, rendering array contents at the addressed location(s)
indeterminate.
Table 24: Suspend and Resume Command Bus-Cycles
Command
Setup Write Cycle
Address Bus
Confirm Write Cycle
Data Bus
Address Bus
Data Bus
Suspend
Device Address
00B0h
—
—
Resume
Device Address
00D0h
—
—
To suspend an on-going erase or program operation, issue the Suspend command to
any device address. The program or erase operation suspends at pre-determined points
during the operation after a delay of tSUSP. Suspend is achieved whenSTS (in RY/BY#
mode) goes high, SR[7,6] = 1 (erase-suspend) or SR[7,2] = 1 (program-suspend).
Note:
Issuing the Suspend command does not change the read mode of the device. The
device will be in Read Status Register mode from when the erase or program command
was first issued, unless the read mode was changed prior to issuing the Suspend
command.
Not all commands are allowed when the device is suspended. Table 25 shows which
device commands are allowed during Program Suspend or Erase Suspend.
Table 25: Valid Commands During Suspend
Device Command
Program Suspend
Erase Suspend
STS Configuration
Allowed
Allowed
Read Array
Allowed
Allowed
Read Status Register
Allowed
Allowed
Clear Status Register
Allowed
Allowed
Read Device Information
Allowed
Allowed
Allowed
Allowed
Not Allowed
Allowed
CFI Query
Word/Byte Program
Buffered Program
Not Allowed
Allowed
Block Erase
Not Allowed
Not Allowed
Program Suspend
Not Allowed
Allowed
Erase Suspend
Not Allowed
Not Allowed
Program/Erase Resume
Allowed
Allowed
Lock Block
Not Allowed
Not Allowed
Unlock Block
Not Allowed
Not Allowed
Program OTP Register
Not Allowed
Not Allowed
Blank Check
Not Allowed
Not Allowed
During Suspend, array-read operations are not allowed in blocks being erased or
programmed.
A block-erase under program-suspend is not allowed. However, word-program under
erase-suspend is allowed, and can be suspended. This results in a simultaneous erasesuspend/ program-suspend condition, indicated by SR[7,6,2] = 1.
Datasheet
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
To resume a suspended program or erase operation, issue the Resume command to
any device address. The read mode of the device is automatically changed to Read
Status Register. The operation continues where it left off, STS (in RY/BY# mode) goes
low, and the respective Status Register bits are cleared.
When the Resume command is issued during a simultaneous erase-suspend/ programsuspend condition, the programming operation is resumed first. Upon completion of the
programming operation, the Status Register should be checked for any errors, and
cleared. The resume command must be issued again to complete the erase operation.
Upon completion of the erase operation, the Status Register should be checked for any
errors, and cleared.
9.7
Status Signal
The STATUS (STS) signal can be configured to different states using the STS
Configuration command (Table 26). Once the STS signal has been configured, it
remains in that configuration until another Configuration command is issued or RP# is
asserted low. Initially, the STS signal defaults to RY/BY# operation where RY/BY# low
indicates that the WSM is busy. RY/BY# high indicates that the state machine is ready
for a new operation or suspended. Table 27 displays possible STS configurations.
Table 26: STS Configuration Register Command Bus-Cycles
Setup Write Cycle
Confirm Write Cycle
Command
Address Bus
STS Configuration
Device Address
Data Bus
00B8h
Address Bus
Device Address
Data Bus
Register Data
To reconfigure the STATUS (STS) signal to other modes, the Configuration command is
given followed by the desired configuration code. The three alternate configurations are
all pulse mode for use as a system interrupt as described in the following paragraphs.
For these configurations, bit 0 controls Erase Complete interrupt pulse, and bit 1
controls Program Complete interrupt pulse. Supplying the 00h configuration code with
the Configuration command resets the STS signal to the default RY/BY# level mode.
The Configuration command may only be given when the device is not busy or
suspended. Check SR.7 for device status. An invalid configuration code will result in
SR.4 and SR.5 being set.
Note:
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STS Pulse mode is not supported in the Clear Lock Bits and Set Lock Bit commands.
Datasheet
41
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 27: STS Configuration Register and Coding Definitions
D7
D6
D5
D4
D3
D2
Reserved3
D[1:0] = STS Configuration Codes2
D1
D0
Pulse on
Program
Complete1
Pulse on
Erase
Complete1
Notes
00 = default, level mode;
device ready indication
Controls HOLD to a memory controller to prevent accessing a flash memory
subsystem while any flash device's WSM is busy.
01 = pulse on Erase Complete
Generates a system interrupt pulse when any flash device in an array has
completed a block erase. Helpful for reformatting blocks after file system free
space reclamation or “cleanup.”
10 = pulse on Program Complete
Not supported on this device.
11 = pulse on Erase or Program Complete
Generates system interrupts to trigger servicing of flash arrays when either
erase or program operations are completed, when a common interrupt service
routine is desired.
Notes:
1.
When configured in one of the pulse modes, STS pulses low with a typical pulse width of 500 ns.
2.
An invalid configuration code will result in both SR.4 and SR.5 being set.
3.
Reserved bits are invalid should be ignored.
9.8
Security and Protection
J3 65 nm SBC device offers both hardware and software security features. Block lock
operations, PRs and VPEN allow users to implement various levels of data protection.
9.8.1
Normal Block Locking
J3 65 nm SBC has the capability of Flexible Block Locking (locked blocks remain locked
upon reset or power cycle): All blocks within the device are in unlocked state when ship
from Numonyx. Blocks can be locked individually by issuing the Set Block Lock Bit
command sequence to any address within a block. Once locked, blocks remain locked
when power is removed, or when the device is reset.
All locked blocks are unlocked simultaneously by issuing the Clear Block Lock Bits
command sequence to any device address. Locked blocks cannot be erased or
programmed. Table 28 summarizes the command bus-cycles.
Table 28: Block Locking Command Bus-Cycles
Command
Set Block Lock Bit
Clear Block Lock Bits
Setup Write Cycle
Confirm Write Cycle
Address Bus
Data Bus
Address Bus
Data Bus
Block Address
0060h
Block Address
0001h
Device Address
0060h
Device Address
00D0h
After issuing the Set Block Lock Bit setup command or Clear Block Lock Bits setup
command, the device’s read mode is automatically changed to Read Status Register
mode. After issuing the confirm command, completion of the operation is indicated by
STS (in RY/BY# mode) going high and SR.7 = 1.
Blocks cannot be locked or unlocked while programming or erasing, or while the device
is suspended. Reliable block lock and unlock operations occur only when VCC and VPEN
are valid. When VPEN ≤ VPENLK, block lock-bits cannot be changed.
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
When the set lock-bit operation is complete, SR.4 should be checked for any error.
When the clear lock-bit operation is complete, SR.5 should be checked for any error.
Errors bits must be cleared using the Clear Status Register command.
Block lock-bit status can be determined by first issuing the Read Device Information
command, and then reading from + 02h. DQ0 indicates the lock
status of the addressed block (0 = unlocked, 1 = locked).
9.8.2
Configurable Block Locking
J3 65 nm SBC devices feature user-configurable block locking. This feature can be
implemented to protect and/or secure the user’s system. The user can individually set
each block as Non-Volatile Temporary, Non-Volatile Semi-Permanent or Non-Volatile
Permanent. For additional information and collateral, please contact the sales
representative.
9.8.3
Password Access
Password Access is a security enhancement offered on the J3 65 nm SBC device. This
feature protects information stored in main-array memory blocks by preventing content
alteration or reads, until a valid 64-bit password is received. Password Access may be
combined with Non-Volatile Protection and/or Volatile Protection to create a multitiered solution.
Please contact your Numonyx Sales for further details concerning Password Access.
9.8.4
128-bit OTP Protection Register
J3 65 nm SBC includes a 128-bit Protection Register (PR) that can be used to increase
the security of a system design. For example, the number contained in the PR can be
used to “match” the flash component with other system components such as the CPU
or ASIC, hence preventing device substitution.
The 128-bits of the PR are divided into two 64-bit segments:
• One segment is programmed at the Numonyx factory with a unique unalterable 64bit number.
• The other segment is left blank for customer designers to program as desired. Once
the customer segment is programmed, it can be locked to prevent further
programming.
9.8.5
Reading the 128-bit OTP Protection Register
The Protection Register is read in Identification Read mode. The device is switched to
this mode by issuing the Read Identifier command (0090h). Once in this mode, read
cycles from addresses shown in Table 31, “Word-Wide Protection Register Addressing”
or Table 32, “Byte-Wide Protection Register Addressing” retrieve the specified
information. To return to Read Array mode, write the Read Array command (00FFh).
9.8.6
Programming the 128-bit OTP Protection Register
PR bits are programmed using the two-cycle Program OTP Register command. The 64bit number is programmed 16 bits at a time for word-wide configuration and eight bits
at a time for byte-wide configuration. First write the Protection Program Setup
command, 00C0h. The next write to the device will latch in address and data and
program the specified location. The allowable addresses are shown in Table 31, “WordWide Protection Register Addressing” on page 45 or Table 32, “Byte-Wide Protection
Register Addressing” on page 45. See Figure 24, “Protection Register Programming
Jan 2011
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Datasheet
43
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Flowchart” on page 56. Any attempt to address Program OTP Register command
outside the defined PR address space will result in a Status Register error (SR.4 will be
set). Attempting to program a locked PR segment will result in a Status Register error
(SR.4 and SR.1 will be set).
Table 29: Programming the 128-bit Protection Register Command Bus-Cycles
First Bus Cycle
Second Bus Cycle
Command
Program OTP Register
9.8.7
Address Bus
Data Bus
Address Bus
Data Bus
Device Address
00C0h
Register Offset
Register Data
Locking the 128-bit OTP Protection Register
The user-programmable segment of the PR is lockable by programming Bit 1 of the
Protection Lock Register (PLR) to 0. Bit 0 of this location is programmed to 0 at the
Numonyx factory to protect the unique device number. Bit 1 is set using the Protection
Program command to program “0xFFFD” to the PLR. After these bits have been
programmed, no further changes can be made to the values stored in the Protection
Register. Protection Program commands to a locked section will result in a Status
Register error (SR.4 and SR.1 will be set). The PR lockout state is not reversible.
Table 30: Programming Protection Lock Register Command Bus-Cycles
First Bus Cycle
Second Bus Cycle
Command
Program OTP Register
Address Bus
Data Bus
Address Bus
Data Bus
Device Address
00C0h
80h
FFFDh
Figure 15: 128-bit Protection Register Memory Map
128-Mbit: A[23:1]
Word Address
64-Mbit: A[22:1]
32-Mbit: A[21:1]
128-Bit Protection Register
0x88
0x87
0x86
0x85
0x84
0x83
0x82
0x81
0x80
64- bit Segment
( User- Programmable)
64- bit Segment
( Factory- Programmed)
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Protection Lock Register
Note:
A0 is not used in x16 mode when accessing the protection register map. See
A0 is used, see Table 32 for x8 addressing.
Datasheet
44
Table 31 for x16 addressing. In x8 mode
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 31: Word-Wide Protection Register Addressing
Word
Use
A8
A7
A6
A5
A4
A3
A2
A1
LOCK
Both
1
0
0
0
0
0
0
0
0
Factory
1
0
0
0
0
0
0
1
1
Factory
1
0
0
0
0
0
1
0
2
Factory
1
0
0
0
0
0
1
1
3
Factory
1
0
0
0
0
1
0
0
4
User
1
0
0
0
0
1
0
1
5
User
1
0
0
0
0
1
1
0
6
User
1
0
0
0
0
1
1
1
7
User
1
0
0
0
1
0
0
0
Note:
All address lines not specified in the above table must be 0 when accessing the Protection Register (i.e., A[MAX:9] = 0.)
Table 32: Byte-Wide Protection Register Addressing
Byte
Use
A8
A7
A6
A5
A4
A3
A2
A1
A0
LOCK
Both
1
0
0
0
0
0
0
0
0
LOCK
Both
1
0
0
0
0
0
0
0
1
0
Factory
1
0
0
0
0
0
0
1
0
1
Factory
1
0
0
0
0
0
0
1
1
2
Factory
1
0
0
0
0
0
1
0
0
3
Factory
1
0
0
0
0
0
1
0
1
4
Factory
1
0
0
0
0
0
1
1
0
5
Factory
1
0
0
0
0
0
1
1
1
6
Factory
1
0
0
0
0
1
0
0
0
7
Factory
1
0
0
0
0
1
0
0
1
8
User
1
0
0
0
0
1
0
1
0
9
User
1
0
0
0
0
1
0
1
1
A
User
1
0
0
0
0
1
1
0
0
B
User
1
0
0
0
0
1
1
0
1
C
User
1
0
0
0
0
1
1
1
0
D
User
1
0
0
0
0
1
1
1
1
E
User
1
0
0
0
1
0
0
0
0
User
1
0
0
0
1
0
0
0
1
F
Note:
All address lines not specified in the above table must be 0 when accessing the Protection Register, i.e., A[MAX:9] = 0.
9.8.8
VPEN Protection
When it’s necessary to protect the entire array, global protection can be achieved using
a hardware mechanism using VPEN. Whenever a valid voltage is present on VPEN,
blocks within the main flash array can be erased or programmed. By grounding VPEN,
blocks within the main array cannot be altered – attempts to program or erase blocks
will fail resulting in the setting of the appropriate error bit in the Status Register. By
holding VPEN low, absolute write protection of all blocks in the array can be achieved.
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Datasheet
45
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
10.0
ID Codes
Table 33: Read Identifier Codes
Code
Device Code
Datasheet
46
Address
Data
32-Mbit
00001h
0016h
64-Mbit
00001h
0017h
128-Mbit
00001h
0018h
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
11.0
Device Command Codes
For a complete definition on device operations refer to Section 8.4, “Device Commands”
on page 33. The list of all applicable commands are included here one more time for
the convenience.
Note:
Some customer applications use illegal or invalid commands (like 0x00) accidentally or
intentionally with the device. An illegal or invalid command caused the device output to
change to Array Read mode on 130nm. On the 65nm device, the output will change to
Read Status Register mode.
After an illegal or invalid command, software may attempt to read the device. If the
illegal command was intentional, software will expect to read array data on 130nm
device, such as 0xFFFF in an unprogrammed location. On the 65nm device, software
may not get the expected array data and instead the status register is read.
Please refer to the legal and valid commands/spec defined in the Datasheet, such as
forread mode, issue 0xFF to Read Array mode, 0x90 to Read Signature, 0x98 to Read
CFI/OTP array mode.
Table 34: Command Bus Cycles and Command Codes
Setup Write Cycle
Confirm Write Cycle
Command
Program Enhanced Configuration Register
Program OTP Register
Data Bus
Address Bus
Data Bus
Register Data
0060h
Register Data
0004h
Device Address
00C0h
Register Offset
Register Data
Device Address
0050h
—
—
Program STS Configuration Register
Device Address
00B8h
Device Address
Register Data
Device Address
00FFh
—
—
Read Status Register
Device Address
0070h
—
—
Read Array
Read Identifier Codes (Read Device Information)
Device Address
0090h
—
—
CFI Query
Device Address
0098h
—
—
Word/Byte Program
Device Address
0040h/
0010h
Device Address
Array Data
Block Address
00E8h
Block Address
00D0h
Blank Check
Security
Read Modes
Clear Status Register
Program and Erase
Registers
Address Bus
Buffered Program
Block Erase
Block Address
0020h
Block Address
00D0h
Program/Erase Suspend
Device Address
00B0h
—
—
Program/Erase Resume
Device Address
00D0h
—
—
Block Address
0060h
Block Address
0001h
Device Address
0060h
Device Address
00D0h
Block Address
00BCh
Block Address
00D0h
Set Block Lock Bit
Clear Block Lock Bits
Blank Check
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47
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
12.0
Flow Charts
Figure 16: Write to Buffer Flowchart
Start
End
Setup
- Write 0xE8
- Block Address
Check Buffer Status
- Perform Read Operation
- Read Ready Status on signal SR.7
(Note 1)
Full Status Register Check(if
desired)
Yes
No
SR.7 = 1 ?
SR.7 = 1 ?
No
Yes
Word Count
- Address = block address
- Data = word count minus 1
(Valid range = 0x00 to 0xFF)
Load Buffer
- Fill write buffer up to word count
- Address = within buffer range
- Data = User data
Read Status Register(SR)
Confirm
- Write 0xD0
- Block address
Notes:
1.
The device defaults to output SR data after the Buffered Programming Setup command (E8h) is issued. CE# and OE#
must be toggled to update Status Register. Don’t issue the Read SR command (70h), which would be interpreted by the
internal state machine as Buffer Word Count.
Datasheet
48
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Figure 17: Status Register Flowchart
Start
Command Cycle
- Issue Status Register Command
- Address = any dev ice address
- Data = 0x70
Data Cycle
- Read Status Register SR[7:0]
SR7 = '1'
No
Yes
- Set/Reset
by WSM
SR6 = '1'
Y es
Erase Suspend
See Suspend/Resume Flowchart
Y es
Program Suspend
See Suspend/Resume Flowchart
No
SR2 = '1'
No
SR5 = '1'
Y es
SR4 = '1'
Yes
Error
Command Sequence
No
No
Error
Erase Failure
Y es
Error
Program Failure
Y es
Error
V PEN < VPENLK
Y es
Error
Block Locked
SR4 = '1'
- Set by WSM
- Reset by user
- See Clear Status
Register
Command
No
SR3 = '1'
No
SR1 = '1'
No
End
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49
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Figure 18: Byte/Word Program Flowchart
Start
Write 40H,
Address
Write Data and
Address
Read Status
Register
Command
Comments
Write
Setup Byte/
Word Program
Data = 40H
Addr = Location to Be Programmed
Write
Byte/Word
Program
Data = Data to Be Programmed
Addr = Location to Be Programmed
Read
(Note 1)
Status Register Data
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
1. Toggling OE# (low to high to low) updates the status register. This
can be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
0
SR.7 =
Bus
Operation
SR full status check can be done after each program operation, or
after a sequence of programming operations.
1
Full Status
Check if Desired
Write FFH after the last program operation to place device in read
array mode.
Byte/Word
Program Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status
Register Data
(See Above)
Check SR.3
1 = Programming to Voltage Error
Detect
Standby
Check SR.1
1 = Device Protect Detect
RP# = VIH, Block Lock-Bit Is Set
Only required for systems
implemeting lock-bit configuration.
Standby
Check SR.4
1 = Programming Error
Voltage Range Error
0
1
SR.1 =
Device Protect Error
0
1
SR.4 =
Programming Error
0
Byte/Word
Program
Successful
Datasheet
50
Comments
Standby
1
SR.3 =
Command
Toggling OE# (low to high to low) updates the status register. This can
be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register
command in cases where multiple locations are programmed before
full status is checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Figure 19: Program Suspend/Resume Flowchart
Start
Bus
Operation
Command
Write
Program
Suspend
Write B0H
0
Data = B0H
Addr = X
Status Register Data
Addr = X
Read
Read Status Register
Comments
Standby
Check SR.7
1 - WSM Ready
0 = WSM Busy
Standby
Check SR.6
1 = Programming Suspended
0 = Programming Completed
SR.7 =
Write
Read Array
Data = FFH
Addr = X
1
SR.2 =
Read array locations other
than that being programmed.
Read
0
Programming Completed
Write
Program
Resume
Data = D0H
Addr = X
1
Write FFH
Read Data Array
No
Done Reading
Yes
Jan 2011
208032-03
Write D0H
Write FFH
Programming Resumed
Read Array Data
Datasheet
51
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Figure 20: Block Erase Flowchart
Start
Issue Single Block Erase
Command 20H, Block
Address
Bus
Operation
Command
Write
Erase Block
Write (Note 1)
Erase
Confirm
Read
Standby
Write Confirm D0H
Block Address
Comments
Data = 20H
Addr = Block Address
Data = D0H
Addr = Block Address
Status register data
With the device enabled,
OE# low updates SR
Addr = X
Check SR.7
1 = WSM Ready
0 = WSM Busy
1. The Erase Confirm byte must follow Erase Setup.
This device does not support erase queuing. Please see
Application note AP-646 For software erase queuing
compatibility.
Read
Status Register
Full status check can be done after all erase and write
sequences complete. Write FFH after the last operation to
reset the device to read array mode.
No
Suspend
Erase Loop
SR.7 =
0
Suspend Erase
Yes
1
Full Status
Check if Desired
Erase Flash
Block(s) Complete
Datasheet
52
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Figure 21: Block Erase Suspend/Resume Flowchart
Start
Bus
Operation
Command
Write
Erase Suspend
Write B0H
0
Data = B0H
Addr = X
Status Register Data
Addr = X
Read
Read Status Register
Comments
Standby
Check SR.7
1 - WSM Ready
0 = WSM Busy
Standby
Check SR.6
1 = Block Erase Suspended
0 = Block Erase Completed
SR.7 =
Write
Erase Resume
Data = D0H
Addr = X
1
0
SR.6 =
Block Erase Completed
1
Program
Read
Read or Program?
Read Array
Data
No
Program
Loop
Done?
Yes
Jan 2011
208032-03
Write D0H
Write FFH
Block Erase Resumed
Read Array Data
Datasheet
53
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Figure 22: Set Block Lock-Bit Flowchart
Start
Write 60H,
Block Address
Write 01H,
Block Address
Bus
Operation
Command
Write
Set Block Lock-Bit
Setup
Data = 60H
Addr =Block Address
Write
Set Block Lock-Bit
Confirm
Data = 01H
Addr = Block Address
Read
Status Register Data
Read Status Register
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
Repeat for subsequent lock-bit operations.
0
SR.7 =
Comments
Full status check can be done after each lock-bit set operation or after
a sequence of lock-bit set operations.
1
Write FFH after the last lock-bit set operation to place device in read
array mode.
Full Status
Check if Desired
Set Lock-Bit Complete
FULL STATUS CHECK PROCEDURE
Read Status Register
Data (See Above)
Bus
Operation
1
SR.3 =
1
SR.4,5 =
Command Sequence
Error
0
1
SR.4 =
0
Set Lock-Bit Error
Comments
Standby
Check SR.3
1 = Programming Voltage Error
Detect
Standby
Check SR.4, 5
Both 1 = Command Sequence
Error
Standby
Check SR.4
1 = Set Lock-Bit Error
Voltage Range Error
0
Command
SR.5, SR.4 and SR.3 are only cleared by the Clear Status Register
command, in cases where multiple lock-bits are set before full status is
checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
Set Lock-Bit
Successful
Datasheet
54
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Figure 23: Clear Lock-Bit Flowchart
Start
Write 60H
Bus
Operation
Command
Write
Clear Block
Lock-Bits Setup
Data = 60H
Addr = X
Write
Clear Block or
Lock-Bits Confirm
Data = D0H
Addr = X
Write D0H
Read
Status Register Data
Read Status Register
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
0
SR.7 =
Comments
Write FFH after the clear lock-bits operation to place device in read
array mode.
1
Full Status
Check if Desired
Clear Block Lock-Bits
Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status Register
Data (See Above)
1
SR.3 =
Standby
Standby
Check SR.4, 5
Both 1 = Command Sequence
Error
Standby
Check SR.5
1 = Clear Block Lock-Bits Error
0
1
Command Sequence
Error
0
1
SR.5 =
Comments
Check SR.3
1 = Programming Voltage Error
Detect
Voltage Range Error
SR.4,5 =
Command
SR.5, SR.4, and SR.3 are only cleared by the Clear Status Register
command.
Clear Block Lock-Bits
Error
If an error is detected, clear the status register before attempting retry
or other error recovery.
0
Clear Block Lock-Bits
Successful
Jan 2011
208032-03
Datasheet
55
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Figure 24: Protection Register Programming Flowchart
Start
Bus Operation
Command
Write C0H
(Protection Reg.
Program Setup)
Write
Protection Program
Setup
Data = C0H
Write
Protection Program
Data = Data to Program
Addr = Location to Program
Write Protect. Register
Address/Data
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
Read Status Register
Protection Program operations can only be addressed within the protection
register address space. Addresses outside the defined space will return an
error.
No
SR.7 = 1?
Comments
Repeat for subsequent programming operations.
Yes
SR Full Status Check can be done after each program or after a sequence of
program operations.
Full Status
Check if Desired
Write FFH after the last program operation to reset device to read array mode.
Program Complete
FULL STATUS CHECK PROCEDURE
Bus Operation
Read Status Register
Data (See Above)
VPEN Range Error
0,1
SR.1, SR.4 =
Protection Register
Programming Error
Comments
Standby
SR.1 SR.3 SR.4
0
1
1
VPEN Low
Standby
0
0
1
Prot. Reg.
Prog. Error
1
0
1
Register
Locked:
Aborted
1, 1
SR.3, SR.4 =
Command
Standby
SR.3 MUST be cleared, if set during a program attempt, before further
attempts are allowed by the Write State Machine.
1,1
SR.1, SR.4 =
Program Successful
Datasheet
56
Attempted Program to
Locked Register Aborted
SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,
in cases of multiple protection register program operations before full status is
checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
13.0
Common Flash Interface
The CFI specification outlines device and host system software interrogation handshake
which allows specific vendor-specified software algorithms to be used for entire families
of devices. This allows device independent, JEDEC ID-independent, and forward- and
backward-compatible software support for the specified flash device families. It allows
flash vendors to standardize their existing interfaces for long-term compatibility.
This section defines the data structure or “database” returned by the (CFI) Query
command. System software should parse this structure to gain critical information such
as block size, density, x8/x16, and electrical specifications. Once this information has
been obtained, the software will know which command sets to use to enable flash
writes, block erases, and otherwise control the flash component. The Query is part of
an overall specification for multiple command set and control interface descriptions
called CFI.
13.1
Query Structure Output
The Query “database” allows system software to gain information for controlling the
flash component. This section describes the device’s CFI-compliant interface that allows
the host system to access Query data.
Query data are always presented on the lowest-order data outputs (D[7:0]) only. The
numerical offset value is the address relative to the maximum bus width supported by
the device. On this family of devices, the Query table device starting address is a 10h,
which is a word address for x16 devices.
For a word-wide (x16) device, the first two bytes of the Query structure, “Q” and “R” in
ASCII, appear on the low byte at word addresses 10h and 11h. This CFI-compliant
device outputs 00h data on upper bytes. Thus, the device outputs ASCII “Q” in the low
byte (D[7:0]) and 00h in the high byte (D[15:8]).
At Query addresses containing two or more bytes of information, the least significant
data byte is presented at the lower address, and the most significant data byte is
presented at the higher address.
In all of the following tables, addresses and data are represented in hexadecimal
notation, so the “h” suffix has been dropped. In addition, since the upper byte of wordwide devices is always “00h,” the leading “00” has been dropped from the table
notation and only the lower byte value is shown. Any x16 device outputs can be
assumed to have 00h on the upper byte in this mode.
Table 35: Summary of Query Structure Output as a Function of Device and Mode
Device
Type/
Mode
x16 device
x16 mode
x16 device
Jan 2011
208032-03
Query start location in
maximum device bus
width addresses
10h
Query data with maximum device
bus width addressing
Query data with byte addressing
Hex
Offset
Hex Code
ASCII
Value
Hex
Offset
Hex Code
ASCII
Value
10:
0051
“Q”
20:
51
“Q”
11:
0052
“R”
21:
00
“Null”
12:
0059
“Y”
22:
52
“R”
20:
51
“Q”
Datasheet
57
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 35: Summary of Query Structure Output as a Function of Device and Mode
Device
Type/
Mode
Query start location in
maximum device bus
width addresses
Hex
Offset
N/A(1)
x8 mode
Note:
1.
Query data with maximum device
bus width addressing
Query data with byte addressing
ASCII
Value
Hex Code
N/A(1)
Hex
Offset
Hex Code
ASCII
Value
21:
51
“Q”
22:
52
“R”
The system must drive the lowest order addresses to access all the device's array data when the device is configured in
x8 mode. Therefore, word addressing, where these lower addresses are not toggled by the system, is "Not Applicable"
for x8-configured devices.
Table 36: Example of Query Structure Output of a x16- and x8-Capable Device
Word Addressing
Offset
Byte Addressing
Hex Code
A15–A0
Value
Offset
D15–D0
Hex Code
A7–A0
0010h
0051
“Q”
0011h
0052
“R”
0012h
0059
“Y”
0013h
P_IDLO
PrVendor
0014h
P_IDHI
ID #
Value
D7–D0
20h
51
“Q”
21h
51
“Q”
22h
52
“R”
23h
52
“R”
24h
59
“Y”
0015h
PLO
PrVendor
25h
59
“Y”
0016h
PHI
TblAdr
26h
P_IDLO
PrVendor
0017h
A_IDLO
AltVendor
27h
P_IDLO
PrVendor
0018h
A_IDHI
ID #
28h
P_IDHI
ID #
...
...
...
...
...
...
13.2
Query Structure Overview
The Query command causes the flash component to display the Common Flash
Interface (CFI) Query structure or “database.” The structure sub-sections and address
locations are summarized below. See AP-646 Common Flash Interface (CFI) and
Command Sets (order number 292204) for a full description of CFI.
The following sections describe the Query structure sub-sections in detail.
Table 37: Query Structure
Offset
Sub-Section Name
Description
Notes
00h
Identification Code
Manufacturer Code
1
01h
Identification Code
Device Code
1
Block Status Register
Block-Specific Information
Reserved
Reserved for Vendor-Specific Information
1
10h
CFI Query Identification String
Reserved for Vendor-Specific Information
1
1Bh
System Interface Information
Command Set ID and Vendor Data Offset
1
(BA+2)h(2)
04-0Fh
Datasheet
58
1,2
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 37: Query Structure
Offset
Sub-Section Name
Description
Notes
27h
Device Geometry Definition
Flash Device Layout
1
P(3)
Primary Numonyx-Specific Extended
Query Table
Vendor-Defined Additional Information Specific to
the Primary Vendor Algorithm
1,3
Notes:
1.
Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a
function of device bus width and mode.
2.
BA = Block Address beginning location (i.e., 02000h is block 2’s beginning location when the block size is
128 KB).
3.
Offset 15 defines “P” which points to the Primary Numonyx-Specific Extended Query Table.
13.3
Block Status Register
The Block Status Register indicates whether an erase operation completed successfully
or whether a given block is locked or can be accessed for flash program/erase
operations.
Table 38: Block Status Register
Offset
Length
(BA+2)h(1)
Note:
1.
1
Description
Address
Value
Block Lock Status Register
BA+2:
--00 or --01
BSR.0 Block Lock Status
0 = Unlocked
1 = Locked
BA+2:
(bit 0): 0 or 1
BSR 1–15: Reserved for Future Use
BA+2:
(bit 1–15): 0
BA = The beginning location of a Block Address (i.e., 010000h is block 1’s (64-KW block) beginning location in word
mode).
13.4
CFI Query Identification String
The CFI Query Identification String provides verification that the component supports
the Common Flash Interface specification. It also indicates the specification version and
supported vendor-specified command set(s).
Table 39: CFI Identification
Offset
10h
13h
15h
17h
19h
Jan 2011
208032-03
Length
3
2
2
2
2
Description
Query-unique ASCII string “QRY”
Add.
Hex
Code
Value
10
--51
“Q”
11:
--52
“R”
12:
--59
“Y”
Primary vendor command set and control interface ID code.
13:
--01
16-bit ID code for vendor-specified algorithms
14:
--00
Extended Query Table primary algorithm address
15:
--31
16:
--00
Alternate vendor command set and control interface ID code.
17:
--00
0000h means no second vendor-specified algorithm exists
18:
--00
Secondary algorithm Extended Query Table address.
19:
--00
0000h means none exists
1A:
--00
Datasheet
59
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
13.5
System Interface Information
The following device information can optimize system interface software.
Table 40: System Interface Information
Add.
Hex
Code
Value
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1B:
--27
2.7 V
1
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1C:
--36
3.6 V
1Dh
1
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1D:
--00
0.0 V
1Eh
1
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1E:
--00
0.0 V
1Fh
1
“n” such that typical single word program time-out = 2n µs
1F:
--06
64 µs
Offset
Length
1Bh
1
1Ch
Description
2n
20h
1
“n” such that typical max. buffer write time-out =
21h
1
“n” such that typical block erase time-out = 2n ms
2n
µs
20:
--07
1
128 µs
1
21:
--0A
1s
22:
--00
NA
23:
--02
256 µs
22h
1
“n” such that typical full chip erase time-out =
23h
1
“n” such that maximum word program time-out = 2n times typical
24h
1
“n” such that maximum buffer write time-out = 2n times typical
24:
--03
1024µs
25h
1
“n” such that maximum block erase time-out = 2n times typical
25:
--02
4s
26:
--00
NA
26h
1
“n” such that maximum chip erase time-out =
2n
ms
times typical
Notes:
1.
The value is 32 Bytes buffer write typical time out
13.6
Device Geometry Definition
This field provides critical details of the flash device geometry.
Table 41: Device Geometry Definition (Sheet 1 of 2)
Offset
Length
Description
2n
Code See Table Below
27h
1
“n” such that device size =
28h
2
Flash device interface:
2Ah
2
“n” such that maximum number of bytes in write buffer = 2n
1
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or more
contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
in number of bytes
x8 async
x16 async
x8/x16 async
28:00,29:00 28:01,29:00 28:02,29:00
2Ch
27:
28:
29:
2A:
x8/
x16
--02
--00
--05
1
2B:
--00
2C:
--01
32
1
1
Notes:
1.
The value is 32 Bytes buffer write typical time out
Datasheet
60
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 41: Device Geometry Definition (Sheet 2 of 2)
Offset
Length
2Dh
4
Description
Code See Table Below
Erase Block Region 1 Information
2D:
bits 0–15 = y, y+1 = number of identical-size erase blocks
2E:
bits 16–31 = z, region erase block(s) size are z x 256 bytes
2F:
30:
Notes:
1.
Compatible with J3 130nm device (32 bytes). J3 65 nm SBC device supports up to maximum 256 words (x16 mode)/
256 bytes (x8 mode) buffer write.
Table 42: Device Geometry: Address Codes
Address
32 Mbit
64 Mbit
128 Mbit
27:
--16
--17
--18
28:
--02
--02
--02
29:
--00
--00
--00
2A:
--05
--05
--05
13.7
2B:
--00
--00
--00
2C:
--01
--01
--01
2D:
--1F
--3F
--7F
2E:
--00
--00
--00
2F:
--00
--00
--00
30:
--02
--02
--02
Primary-Vendor Specific Extended Query Table
Certain flash features and commands are optional. The Primary Vendor-Specific
Extended Query table specifies this and other similar information.
Table 43: Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Offset(1)
P = 31h
Length
(P+0)h
3
(P+1)h
Description
(Optional Flash Features and Commands)
Primary extended query table
Unique ASCII string “PRI”
(P+2)h
Add.
Hex
Code
Value
31:
--50
“P”
32:
--52
“R”
33:
--49
“I”
(P+3)h
1
Major version number, ASCII
34:
--31
“1”
(P+4)h
1
Minor version number, ASCII
35:
--31
“1”
Jan 2011
208032-03
Datasheet
61
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 43: Primary Vendor-Specific Extended Query (Sheet 2 of 2)
Offset(1)
P = 31h
Length
4
Description
(Optional Flash Features and Commands)
Optional feature and command support (1=yes, 0=no)
Undefined bits are “0.” If bit 31 is
“1” then another 31 bit field of optional features follows at
the end of the bit-30 field.
bit 0 Chip erase supported
(P+5)h
(P+6)h
(P+7)h
(P+8)h
--00
38:
--00
39:
--00
bit 0 = 0
No
Yes
Yes
bit 3 = 1
Yes
bit 4 = 0
No
bit 5 Instant Individual block locking supported
bit 5 = 0
No
bit 6 Protection bits supported
bit 6 = 1
Yes
bit 7 Page-mode read supported
bit 7 = 1
Yes
bit 8 Synchronous read supported
bit 8 = 0
No
bit 9 = 0
No
bit 30 CFI Link(s) to follow (32, 64, 128 Mb)
bit 30 = 0
No
bit 31 Another “Optional Feature” field to follow
bit 31 = 0
No
Supported functions after suspend: read Array, Status, Query
Other supported operations are:
bits 1–7 reserved; undefined bits are “0”
3A:
--01
bit 0 = 1
Yes
Block Status Register mask
3B:
--01
bits 2–15 are Reserved; undefined bits are “0”
3C:
--00
bit 0 Block Lock-Bit Status register active
bit 0 = 1
Yes
bit 1 Block Lock-Down Bit Status active
bit 1 = 0
No
(P+C)h
1
VCC logic supply highest performance program/erase voltage
bits 0–3 BCD value in 100 mV
bits 4–7 BCD value in volts
(P+D)h
1
VPP optimum program/erase supply voltage
bits 0–3 BCD value in 100 mV
bits 4–7 HEX value in volts
Note:
1.
37:
bit 1 = 1
bit 0 Program supported after erase suspend
2
--CE
bit 2 = 1
bit9 Simultaneous Operation Supported
(P+A)h
(P+B)h
36:
Value
bit 2 Suspend program supported
bit 3 Legacy lock/unlock supported
1
Hex
Code
bit 1 Suspend erase supported
bit 4 Queued erase supported
(P+9)h
Add.
3D:
--33
3.3 V
3E:
--00
0.0 V
Setting this bit, will lead to the extension of the CFI table.
Datasheet
62
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 44: Protection Register Information
Offset(1)
P = 31h
Length
(P+E)h
1
Number of Protection register fields in JEDEC ID space.
“00h,” indicates that 256 protection bytes are available
4
Protection Field 1: Protection Description
This field describes user-available One Time Programmable (OTP)
protection register bytes. Some are pre-programmed with deviceunique serial numbers. Others are user-programmable. Bits 0-15 point
to the protection register lock byte, the section’s first byte. The
following bytes are factory pre-programmed and user-programmable.
bits 0-7 = Lock/bytes JEDEC-plane physical low address
bits 8-15 = Lock/bytes JEDEC-plane physical high address
bits 16-23 = “n” such that 2n = factory pre-programmed bytes
bits 24-31 = “n” such that 2n = user-programmable bytes
(P+F)h
(P+10)h
(P+11)h
(P+12)h
Note:
1.
Description
(Optional Flash Features and Commands)
Add.
Hex
Code
Value
3F:
--01
01
40:
41:
42:
43:
--80
--00
--03
--03
80h
00h
8bytes
8bytes
Add.
Hex
Code
Value
The variable P is a pointer which is defined at CFI offset 15h.
Table 45: Burst Read Information
Offset(1)
P = 31h
Length
(P+13)h
1
Page Mode Read capability
bits 0–7 = “n” such that 2n HEX value represents the number of readpage bytes. See offset 28h for device word width to determine pagemode data output width. 00h indicates no read page buffer.
44:
--04
16 byte
(P+14)h
1
Number of synchronous mode read configuration fields that follow. 00h
indicates no burst capability.
45:
--00
0
(P+15)h
1
Synchronous Mode Read Capability Configuration 1
Bits 3-7 = Reserved
bits 0-2 = “n” such that 2n+1 HEX value represents the maximum
number of continuous synchronous burst reads when the device is
configured for its maximum word width. A value of 07h indicates that
the device is capable of continuous linear bursts until that will output
data until the internal burst counter reaches the end of the device’s
burstable address space. This field’s 3-bit value can be written directly
to the Read Configuration Register Bits 0-2 if the device is configured for
its maximum word width. See offset 1Fh for word width to determine
the burst data output width.
46:
--00
n/a
(P+16h)h
1
Synchronous Mode Read Capability Configuration 2
47:
--00
n/a
(P+45h)h
1
J3C mark for VIL fix for customers
76:
--01
01
Note:
1.
Description
(Optional Flash Features and Commands)
The variable P is a pointer which is defined at CFI offset 15h.
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208032-03
Datasheet
63
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Appendix A Additional Information
Order Number
Note:
Document/Tool
Numonyx®
316577
Embedded Flash Memory (J3 v D); 28F256J3D, 28F128J3D, 28F640J3D,
28F320J3D Specification Update
298136
Numonyx® Persistent Storage Manager (PSM) User’s Guide Software Manual
292204
AP-646 Common Flash Interface (CFI) and Command Sets
319942
Numonyx® Embedded Flash Memory (J3-65nm_256-Mbit_MLC Datasheet)
Contact your local Numonyx or distribution sales office or visit the Numonyx home page http://www.numonyx.com for
technical documentation, tools, or the most current information on Numonyx® Embedded Flash Memory (J3 65 nm)
Single Bit per Cell (SBC) .
Datasheet
64
Jan 2011
208032-03
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Appendix B Ordering Information
Figure 25: Decoder for 32-, 64-, 128-Mbit
l
P C2 8 F 3 2 0 J 3 F 7 5 *
Device Features *
Package
Access Speed
JS = Pb-Free 56-TSOP
RC = 64-Ball Easy BGA
PC = 64-Ball Pb-Free Easy BGA
75ns
Lithography
F = 65nm
Voltage (VCC/VPEN)
3 = 3 V/3 V
Product Line Designator
Numonyx® Flash Memory
Product Family
J = Numonyx® Embedded
Flash Memory
Device Density
128 = 128-Mbit
640 = 64-Mbit
320 = 32-Mbit
Note:
The last digit is randomly assigned to cover packing media and/or features or other
specific configuration.
Table 46: Valid Combinations
Note:
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208032-03
32-Mbit
64-Mbit
128-Mbit
JS28F320J3F75*
JS28F640J3F75*
JS28F128J3F75*
RC28F320J3F75*
RC28F640J3F75*
RC28F128J3F75*
PC28F320J3F75*
PC28F640J3F75*
PC28F128J3F75*
For further information on ordering products or for product part numbers, go to:http://
www.numonyx.com/en-US/MemoryProducts/Pages/PartNumberLookup.aspx.
Datasheet
65
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set
forth herein.
Although considered final, these specifications are subject to change, as further product development and data
characterization sometimes occur.
Datasheet
66
Jan 2011
208032
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2010 Micron Technology, Inc. All rights reserved.
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