RC28F640P33B85A

256Mb, 512Mb, 1Gb StrataFlash Memory Features Micron StrataFlash Embedded Memory MT28GU256AAA2EGC-0AAT, MT28GU512AAA2EGC-0AAT, MT28GU01GAAA2EGC-0AAT Features • Power – Core voltage: 1.7– 2.0V – I/O voltage: 1.7–2.0V – Standby current: 60μA (TYP) for 512Mb – Automatic power savings mode – 16-word synchronous-burst read current: 23mA (TYP) @ 108 MHz; 24mA (TYP) @ 133 MHz • Software – Micron® Flash data integrator (FDI) optimized – Basic command set (BCS) and extended command set (ECS) compatible – Common Flash interface (CFI) capable • Security – One-time programmable (OTP) space 64 unique factory device identifier bits 2112 user-programmable OTP bits – Absolute write protection: V PP = GND – Power-transition erase/program lockout – Individual zero latency block locking – Individual block lock-down • Density and packaging – 256Mb, 512Mb, and 1Gb – Address-data multiplexed interface – 64-Ball TBGA • High-performance read, program, and erase – 106ns initial read access – 108 MHz with zero wait-state synchronous burst reads: 7ns clock-to-data output – 133 MHz with zero wait-state synchronous burst reads: 6ns clock-to-data output – 8-, 16-, and continuous-word synchronous-burst reads – Programmable WAIT configuration – Customer-configurable output driver impedance – Buffered programming: 2.0 μs/word (TYP), 512Mb – Block erase: 0.9s per block (TYP) – 20μs (TYP) program/erase suspend • Architecture – 16-bit wide data bus – Multilevel cell technology – Symmetrically-blocked array architecture – 256KB erase blocks – 1Gb device: Eight 128Mb partitions – 512Mb device: Eight 64Mb partitions – 256Mb device: Eight 32Mb partitions – Status register for partition/device status – Blank check feature • Quality and reliability – Automotive temperature: –40°C to +105°C (Grade 2 AEC-Q100) – Minimum 100,000 ERASE cycles per block – More than 20 years data retention – 65nm process technology CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 256Mb, 512Mb, 1Gb StrataFlash Memory Features Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or high/low protection, or for further information, contact the factory. Available part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Figure 1: Current Part Number Decoder MT 28G U 512 A A A 2 GC -0 E A AT -- Micron Technology Production Status Part Family Blank = Production ES = Engineering samples 28G = G series parallel NOR Voltage Operating Temperature U = 1.7–2.0V AT = –40°C to +105°C (Grade 2 AEC-Q100) Device Density 256 = 256Mb 512 = 512Mb 01G = 1Gb Special Options A = Automotive quality Stack A = Single die Security Features 0 = Standard features Lithography 65nm = A Package Codes GC = 64-ball TBGA, 10 x 8 x 1.2mm Die Revision Rev. A = A Rev. B = B Rev. C = C Block Structure E = Uniform Interface 2 = x16 A/D MUX CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Features Contents Important Notes and Warnings ......................................................................................................................... 8 General Description ......................................................................................................................................... 8 Functional Overview ........................................................................................................................................ 9 Configuration and Memory Map ..................................................................................................................... 10 Device ID ....................................................................................................................................................... 13 Package Dimensions ....................................................................................................................................... 14 Signal Assignments ......................................................................................................................................... 15 Signal Descriptions ......................................................................................................................................... 16 Bus Interface .................................................................................................................................................. 18 Reset .......................................................................................................................................................... 18 Standby ..................................................................................................................................................... 18 Output Disable ........................................................................................................................................... 18 Asynchronous Read .................................................................................................................................... 19 Synchronous Read ...................................................................................................................................... 19 Burst Wrapping .......................................................................................................................................... 19 End-of-Wordline Delay ............................................................................................................................... 20 Write .......................................................................................................................................................... 21 Command Definitions .................................................................................................................................... 22 Status Register ................................................................................................................................................ 24 Clear Status Register ................................................................................................................................... 25 Read Configuration Register ........................................................................................................................... 26 Programming the Read Configuration Register ............................................................................................ 27 Latency Count Code and Clock Frequency ................................................................................................... 28 Extended Configuration Register ..................................................................................................................... 29 Output Driver Control ................................................................................................................................ 29 Programming the Extended Configuration Register ...................................................................................... 30 Read Operations ............................................................................................................................................. 31 Read Array ................................................................................................................................................. 31 Read ID ...................................................................................................................................................... 31 Read CFI .................................................................................................................................................... 32 Read Status Register ................................................................................................................................... 32 WAIT Operation ......................................................................................................................................... 33 Programming Modes ...................................................................................................................................... 34 Control Mode ............................................................................................................................................. 34 Object Mode .............................................................................................................................................. 35 Program Operations ....................................................................................................................................... 39 Single-Word Programming .......................................................................................................................... 39 Buffered Programming ............................................................................................................................... 40 Buffered Enhanced Factory Programming ................................................................................................... 40 Erase Operations ............................................................................................................................................ 43 BLOCK ERASE ............................................................................................................................................ 43 SUSPEND and RESUME Operations ................................................................................................................ 44 SUSPEND Operation .................................................................................................................................. 44 RESUME Operation .................................................................................................................................... 45 BLANK CHECK Operation .............................................................................................................................. 46 Block Lock ..................................................................................................................................................... 47 One-Time Programmable Operations .............................................................................................................. 49 Programming OTP Area .............................................................................................................................. 51 Reading OTP Area ....................................................................................................................................... 51 Global Main-Array Protection ......................................................................................................................... 52 CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Features Power and Reset Specifications ....................................................................................................................... 53 Initialization .............................................................................................................................................. 53 Power-Up and Down .................................................................................................................................. 53 Reset .......................................................................................................................................................... 53 Automatic Power Saving ............................................................................................................................. 55 Power Supply Decoupling ........................................................................................................................... 55 Electrical Specifications .................................................................................................................................. 56 Electrical Specifications – DC Current and Voltage Characteristics and Operating Conditions ............................ 57 Electrical Specifications – AC Characteristics and Operating Conditions ........................................................... 60 AC Test Conditions ..................................................................................................................................... 60 AC Read Specifications ................................................................................................................................... 62 AC Read Timing .......................................................................................................................................... 63 AC Write Specifications ................................................................................................................................... 68 Electrical Specifications – Program/Erase Characteristics ................................................................................. 73 Common Flash Interface ................................................................................................................................ 74 READ CFI Structure Output ........................................................................................................................ 74 CFI ID String .............................................................................................................................................. 75 System Interface Information ...................................................................................................................... 75 Device Geometry Definition ....................................................................................................................... 76 Primary Micron-Specific Extended Query .................................................................................................... 78 Program Flowcharts ....................................................................................................................................... 84 Erase Flowcharts ............................................................................................................................................ 92 Block Lock and Protection Flowcharts ............................................................................................................. 96 Blank Check Flowcharts ................................................................................................................................. 100 AADM Mode ................................................................................................................................................. 103 AADM Feature Overview ............................................................................................................................ 103 AADM Mode Enable (RCR[4] = 1) ............................................................................................................... 103 Bus Cycles and Address Capture ................................................................................................................. 103 WAIT Behavior .......................................................................................................................................... 103 Asynchronous READ and WRITE Cycles ..................................................................................................... 104 Asynchronous READ Cycles ....................................................................................................................... 104 Asynchronous WRITE Cycles ..................................................................................................................... 106 Synchronous READ and WRITE Cycles ....................................................................................................... 107 Synchronous READ Cycles ......................................................................................................................... 107 Synchronous WRITE Cycles ....................................................................................................................... 110 System Boot .............................................................................................................................................. 110 Revision History ............................................................................................................................................ 111 Rev. F – 5/18 .............................................................................................................................................. 111 Rev. E – 6/15 .............................................................................................................................................. 111 Rev. D – 4/15 ............................................................................................................................................. 111 Rev. C – 2/15 .............................................................................................................................................. 111 Rev. B – 10/14 ............................................................................................................................................ 111 Rev. A – 12/13 ............................................................................................................................................ 111 CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Features List of Figures Figure 1: Current Part Number Decoder ........................................................................................................... 2 Figure 2: 64-Ball TBGA (10mm x 8mm x 1.2mm) – Package Code: GC ............................................................... 14 Figure 3: 64-Ball TBGA (Top View, Balls Down) ............................................................................................... 15 Figure 4: Main Array Word Lines .................................................................................................................... 20 Figure 5: Wrap/No-Wrap Example ................................................................................................................. 20 Figure 6: End-of-Wordline Delay .................................................................................................................... 20 Figure 7: Configurable Programming Regions: Control Mode and Object Mode ............................................... 35 Figure 8: Configurable Programming Regions: Control Mode and Object Mode Segments ................................ 37 Figure 9: BLOCK LOCK Operations ................................................................................................................ 48 Figure 10: OTP Area Map ............................................................................................................................... 50 Figure 11: V PP Supply Connection Example .................................................................................................... 52 Figure 12: RESET Operation Waveforms ......................................................................................................... 54 Figure 13: AC Input/Output Reference Waveform ........................................................................................... 60 Figure 14: Transient Equivalent Testing Load Circuit ....................................................................................... 60 Figure 15: Clock Input AC Waveform .............................................................................................................. 61 Figure 16: Asynchronous Single-Word Read .................................................................................................... 64 Figure 17: Synchronous 8- or 16-Word Burst Read (A/D MUX) ......................................................................... 65 Figure 18: Synchronous Continuous Misaligned Burst Read (A/D MUX) .......................................................... 66 Figure 19: Synchronous Burst with Burst-Interrupt (AD-MUX) ........................................................................ 66 Figure 20: Write Timing ................................................................................................................................. 69 Figure 21: Write to Write (A/D-MUX) ............................................................................................................. 70 Figure 22: Async Read to Write (A/D-MUX) .................................................................................................... 70 Figure 23: Write to Async Read (A/D-MUX) .................................................................................................... 71 Figure 24: Sync Read to Write (A/D-MUX) ...................................................................................................... 71 Figure 25: Write to Sync Read (A/D-MUX) ...................................................................................................... 72 Figure 26: Word Program Flow Chart .............................................................................................................. 84 Figure 27: Word Program Full Status Check Flow Chart ................................................................................... 85 Figure 28: Program Suspend/Resume Flow Chart ........................................................................................... 86 Figure 29: Buffer Programming Flow Chart ..................................................................................................... 88 Figure 30: Buffered Enhanced Factory Programming (BEFP) Flow Chart .......................................................... 90 Figure 31: Block Erase Flowchart .................................................................................................................... 92 Figure 32: Block Erase Full Status Check Flow Chart ........................................................................................ 93 Figure 33: Erase Suspend/Resume Flow Chart ................................................................................................ 94 Figure 34: Block Lock Operations Flow Chart .................................................................................................. 96 Figure 35: Protection Register Programming Flow Chart ................................................................................. 97 Figure 36: Protection Register Programming Full Status Check Flow Chart ....................................................... 99 Figure 37: Blank Check Flow Chart ................................................................................................................ 100 Figure 38: Blank Check Full Status Check Flow Chart ..................................................................................... 102 Figure 39: AADM Asynchronous READ Cycle (Latching A[MAX:0]) ................................................................. 105 Figure 40: AADM Asynchronous READ Cycle (Latching A[15:0] only) .............................................................. 105 Figure 41: AADM Asynchronous WRITE Cycle (Latching A[MAX:0]) ................................................................ 106 Figure 42: AADM Asynchronous WRITE Cycle (Latching A[15:0] only) ............................................................ 107 Figure 43: AADM Synchronous Burst READ Cycle (ADV# De-asserted Between Address Cycles) ....................... 109 Figure 44: AADM Synchronous Burst READ Cycle (ADV# Not De-asserted Between Address Cycles) ................ 109 Figure 45: AADM Synchronous Burst READ Cycle (Latching A[15:0] only) ....................................................... 110 CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Features List of Tables Table 1: Main Array Memory Map – 256Mb .................................................................................................... Table 2: Main Array Memory Map – 512Mb, 1Gb ............................................................................................. Table 3: Device ID Codes ............................................................................................................................... Table 4: Signal Descriptions ........................................................................................................................... Table 5: Address Mapping for Address/Data MUX Interface ............................................................................ Table 6: Bus Control Signals ........................................................................................................................... Table 7: Command Set .................................................................................................................................. Table 8: Status Register Bit Definitions (Default Value = 0080h) ....................................................................... Table 9: CLEAR STATUS REGISTER Command Bus Cycles ............................................................................... Table 10: Read Configuration Register Bit Definitions ..................................................................................... Table 11: PROGRAM READ CONFIGURATION REGISTER Bus Cycles .............................................................. Table 12: Supported Latency and Clock Frequency ......................................................................................... Table 13: Extended Configuration Register Bit Definitions (Default Value = 0004h) ........................................... Table 14: Output Driver Control Characteristics .............................................................................................. Table 15: Program Extended Configuration Register Command Bus Cycles ...................................................... Table 16: READ MODE Command Bus Cycles ................................................................................................. Table 17: Device Information ......................................................................................................................... Table 18: WAIT Behavior Summary – A/D MUX .............................................................................................. Table 19: Programming Region Next State ...................................................................................................... Table 20: PROGRAM Command Bus Cycles .................................................................................................... Table 21: BEFP Requirements and Considerations .......................................................................................... Table 22: ERASE Command Bus Cycle ............................................................................................................ Table 23: Valid Commands During Suspend ................................................................................................... Table 24: SUSPEND and RESUME Command Bus Cycles ................................................................................ Table 25: BLANK CHECK Command Bus Cycles ............................................................................................. Table 26: BLOCK LOCK Command Bus Cycles ................................................................................................ Table 27: Block Lock Configuration ................................................................................................................ Table 28: Program OTP Area Command Bus Cycles ......................................................................................... Table 29: Power Sequencing ........................................................................................................................... Table 30: Reset Specifications ........................................................................................................................ Table 31: Absolute Maximum Ratings ............................................................................................................. Table 32: Operating Conditions ...................................................................................................................... Table 33: DC Current Characteristics and Operating Conditions (VCCQ = 1.7V-2.0V) ......................................... Table 34: DC Voltage Characteristics and Operating Conditions (V CCQ = 1.7V-2.0V) .......................................... Table 35: AC Input Requirements ................................................................................................................... Table 36: Test Configuration Load Capacitor Values for Worst Case Speed Conditions ...................................... Table 37: Capacitance .................................................................................................................................... Table 38: AC Read Specifications (CLK-Latching, 133 MHz), V CCQ = 1.7V to 2.0V ............................................... Table 39: AC Write Specifications ................................................................................................................... Table 40: Program/Erase Characteristics ........................................................................................................ Table 41: Example of CFI Output (x16 Device) as a Function of Device and Mode ............................................. Table 42: CFI Database: Addresses and Sections ............................................................................................. Table 43: CFI ID String ................................................................................................................................... Table 44: System Interface Information .......................................................................................................... Table 45: Device Geometry ............................................................................................................................ Table 46: Block Region Map Information ........................................................................................................ Table 47: Primary Micron-Specific Extended Query ........................................................................................ Table 48: One Time Programmable (OTP) Space Information .......................................................................... Table 49: Burst Read Informaton .................................................................................................................... Table 50: Partition and Block Erase Region Information .................................................................................. CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 6 10 11 13 16 17 18 22 24 25 26 27 28 29 29 30 31 32 33 38 39 41 43 44 45 46 47 48 49 53 54 56 56 57 59 60 60 61 62 68 73 74 74 75 75 76 77 78 79 80 80 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Features Table 51: Table 52: Table 53: Table 54: Table 55: Table 56: Table 57: Table 58: Table 59: Table 60: Table 61: Table 62: Table 63: Table 64: Table 65: Table 66: Table 67: Table 68: Partition Region 1 Information: Top and Bottom Offset/Address ....................................................... 81 Partition and Erase Block Map Information ...................................................................................... 83 Word Program Procedure ................................................................................................................ 84 Word Program Full Status Check Procedure ...................................................................................... 85 Program Suspend/Resume Procedure .............................................................................................. 87 Buffer Programming Procedure ....................................................................................................... 89 Buffered Enhanced Factory Programming (BEFP) Procedure ............................................................ 90 Block Erase Procedure ..................................................................................................................... 92 Block Erase Full Status Check Procedure .......................................................................................... 93 Erase Suspend/Resume Procedure .................................................................................................. 95 Block Lock Operations Procedure .................................................................................................... 96 Protection Register Programming Procedure .................................................................................... 98 Protection Register Programming Full Status Check Procedure ......................................................... 99 Blank Check Procedure .................................................................................................................. 100 Blank Check Full Status Check Procedure ........................................................................................ 102 AADM Asynchronous and Latching Timings ................................................................................... 104 AADM Asynchronous Write Timings ............................................................................................... 106 AADM Synchronous Timings .......................................................................................................... 107 CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Important Notes and Warnings Important Notes and Warnings Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions. This document supersedes and replaces all information supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorized by Micron. Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting from any use of non-automotive-grade products in automotive applications. Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of the Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron component for any critical application, customer and distributor shall indemnify and hold harmless Micron and its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the Micron product. Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems, applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included in customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component. Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort, warranty, breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly authorized representative. General Description Micron's 65nm device is the latest generation of StrataFlash® memory. The device provides high-performance, asynchronous read mode and synchronous-burst read mode using 1.8V low-voltage, multilevel cell (MLC) technology. CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Functional Overview The device is manufactured using 65nm process technologies and is available in industry-standard chip scale packaging. Functional Overview This device provides high read and write performance at low voltage on a 16-bit data bus. The architecture provides individually erasable memory blocks sized for optimum code and data storage. The device supports synchronous burst reads up to 133 MHz using CLK latching. Upon initial power-up or return from reset, the device defaults to asynchronous read mode. Configuring the read configuration register enables synchronous burst mode reads. In synchronous burst mode, output data is synchronized with a user-supplied clock signal. In continuous-burst mode, a data read can traverse partition boundaries. A WAIT signal simplifies synchronizing the CPU to the memory. Designed for low-voltage applications, the device supports READ operations with V CC at 1.8V, and ERASE and PROGRAM operations with V PP at 1.8V or 9.0V. V CC and V PP can be tied together for a simple, ultra low-power design. In addition to voltage flexibility, a dedicated V PP connection provides complete data protection when V PP is less than VPPLK. A status register provides status and error conditions of ERASE and PROGRAM operations. One-time programmable (OTP) area enables unique identification that can be used to increase security. Additionally, the individual block lock feature provides zero-latency block locking and unlocking to protect against unwanted program or erase of the array. The device offers power-savings features, including automatic power savings mode and standby mode. For power savings, the device automatically enters APS following a READ cycle. Standby is initiated when the system deselects the device by de-asserting CE#. CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Configuration and Memory Map Configuration and Memory Map The device features a symmetrical block architecture. The main array of the 256Mb device is divided into eight 32Mb partitions. Each partition is divided into sixteen 256KB blocks (8 x 16 = 128 blocks). The main array of the 512Mb device is divided into eight 64Mb partitions. Each partition is divided into thirty-two 256KB blocks (8 x 32 = 256 blocks). The main array of the 1Gb device is divided into eight 128Mb partitions. Each partition is divided into sixty-four 256KB blocks (8 x 64 = 512 blocks). Each block is divided into as many as 256 1KB programming regions. Each region is divided into as many as thirty-two 32-byte segments Table 1: Main Array Memory Map – 256Mb Partition Size (Mb) Block # Address Range 7 32 127 0FE0000-0FFFFFF . . . . . . 112 0E00000-0E1FFFF 111 0DE0000-0DFFFFF . . . . . . 96 0C00000-0C1FFFF 95 0BE0000-0BFFFFF . . . . . . 80 0A00000-0A1FFFF 79 09E0000-09FFFFF . . . . . . 64 0800000-081FFFF 63 07E0000-07FFFFF . . . . . . 48 0600000-061FFFF 6 5 4 3 CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 32 32 32 32 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Configuration and Memory Map Table 1: Main Array Memory Map – 256Mb (Continued) Partition Size (Mb) Block # Address Range 2 32 47 05E0000-05FFFFF . . . . . . 32 0400000-041FFFF 31 03E0000-03FFFFF . . . . . . 16 0200000-021FFFF 15 01E0000-01FFFFF . . . . . . 0 0000000-001FFFF 1 32 0 32 Table 2: Main Array Memory Map – 512Mb, 1Gb 512Mb 1Gb Partition Size (Mb) Block # Address Range Size (Mb) Block # Address Range 7 64 255 1FE0000-1FFFFFF 128 511 3FE0000-3FFFFFF . . . . . . . . . . . . 224 1C00000-1C1FFFF 448 3800000-381FFFF 223 1BE0000-1BFFFFF 447 37E0000-37FFFFF . . . . . . . . . . . . 192 1800000-181FFFF 384 3000000-301FFFF 191 17E0000-17FFFFF 383 2FE0000-2FFFFFF . . . . . . . . . . . . 160 1400000-141FFFF 320 2800000-281FFFF 6 5 64 64 CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 11 128 128 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Configuration and Memory Map Table 2: Main Array Memory Map – 512Mb, 1Gb (Continued) 512Mb Partition Size (Mb) Block # 4 64 3 2 1 0 64 64 64 64 CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 1Gb Address Range Size (Mb) Block # Address Range 159 13E0000-13FFFFF 128 319 27E0000-27FFFFF . . . . . . . . . . . . 128 1000000-101FFFF 256 2000000-201FFFF 127 0FE0000-0FFFFFF 255 1FE0000-1FFFFFF . . . . . . . . . . . . 96 0300000-031FFFF 192 1800000-181FFFF 95 0BE0000-0BFFFFF 191 17E0000-17FFFFF . . . . . . . . . . . . 64 0800000-081FFFF 128 1000000-101FFFF 63 07E0000-07FFFFF 127 0FE0000-0FFFFFF . . . . . . . . . . . . 32 0400000-041FFFF 64 0800000-081FFFF 31 03E0000-03FFFFF 63 07E0000-07FFFFF . . . . . . . . . . . . 0 0000000-001FFFF 0 0000000-001FFFF 12 128 128 128 128 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Device ID Device ID Table 3: Device ID Codes Density Product Device Identifier Code (Hex) 256Mb A/D MUX 8904 512Mb A/D MUX 8881 1024Mb A/D MUX 88B1 CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Package Dimensions Package Dimensions Figure 2: 64-Ball TBGA (10mm x 8mm x 1.2mm) – Package Code: GC 0.78 TYP Seating plane 0.1 1.00 TYP 64X Ø0.43 ±0.1 1.5 ±0.1 8 7 6 5 4 3 2 Ball A0 ID Ball A0 ID 1 0.5 ±0.1 A B C D 8 ±0.1 E F 1.00 TYP G H 10 ±0.1 1.20 MAX Note: CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 1. All dimensions are in millimeters. 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Signal Assignments Signal Assignments Figure 3: 64-Ball TBGA (Top View, Balls Down) 1 2 3 4 5 6 7 8 RFU RFU RFU VPP RFU VCC A17 A21 RFU VSS RFU CE# RFU A24 A18 A25 RFU RFU RFU RFU RFU WP# A19 A20 RFU RFU RFU RST# VCCQ VCCQ RFU A16 A B C D E ADQ8 ADQ1 ADQ9 ADQ3 ADQ4 CLK ADQ15 RFU F RFU ADQ0 ADQ10 ADQ11 ADQ12 ADV# WAIT OE# G A22 RFU DQ2 RFU VSSQ VCC VCCQ ADQ5 ADQ6 ADQ14 WE# H Notes: CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN VSS DQ13 VSSQ DQ7 A23 1. B6 is A24 for 512Mb densities and above; otherwise, it is a no connect (NC). 2. B8 is A25 for 1Gb density; otherwise, it is a no connect (NC). 3. For AA/D MUX configuration, the upper addresses A[MAX;16] must be connected to VSS. 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Signal Descriptions Signal Descriptions Table 4: Signal Descriptions Symbol Type Description A[MAX:16] Input Address inputs: Upper address inputs for all READ/WRITE cycles. A/DQ[15:0] Input/Output Address inputs or data: Lower address inputs during the address phase for all READ/ WRITE cycles; data or command inputs during WRITE cycles; data, status, or device information outputs during READ cycles. CE# Input Chip enable: LOW true input. When LOW, CE# selects the die; when HIGH, CE# deselects the die and places it in standby. A/D MUX Control Signals OE# Input Output enable: LOW true input. Must be LOW for READs and HIGH for WRITEs. WE# Input Write enable: LOW true input. Must be LOW for WRITEs and HIGH for READs. CLK Input Clock: Synchronizes burst READ operations with the host controller. ADV# Input Address valid: LOW true input. When LOW, ADV# enables address inputs. For synchronous burst READs, address inputs are latched on the rising edge. WP# Input Write protect: LOW true input. When LOW, WP# enables block lock down; when HIGH, WP# disables block lock down. RST# Input Reset: LOW true input. When LOW, RST# inhibits all operations; must be HIGH for normal operations. VPP Input Erase/program voltage: Enables voltage for PROGRAM and ERASE operations. Array contents cannot be altered when VPP is at or below VPPLK. WAIT Output WAIT: Configurable HIGH or LOW true output. When asserted, WAIT indicates DQ[15:0] is invalid; when de-asserted, WAIT indicates DQ[15:0] is valid. VCC Power Core power: Supply voltage for core circuits. All operations are inhibited when VCC is at or below VLKO. VCCQ Power I/O power: Supply voltage for all I/O drivers. All operations are inhibited when VCCQ is at or below VLKOQ. VSS Power Logic ground: Core logic ground return. Connect all VSS balls to system ground; do not float any VSS balls. VSSQ Power I/O ground: I/O driver ground return. Connect all VSSQ balls to system ground; do not float any VSSQ balls. RFU Reserved CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN Reserved: Reserved for future use and should not be connected. 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Signal Descriptions Table 5: Address Mapping for Address/Data MUX Interface Address Bit A/D MUX Configuration (RCR Bit 4 = 0) and OE# = 1 AADM Mode (RCR Bit 4 = 1) and OE# = 1 AADM Mode (RCR Bit 4 = 1) and OE# = 0 A0 DQ0 A0 A16 A1 DQ1 A1 A17 A2 DQ2 A2 A18 A3 DQ3 A3 A19 A4 DQ4 A4 A20 A5 DQ5 A5 A21 A6 DQ6 A6 A22 A7 DQ7 A7 A23 A8 DQ8 A8 A24 A9 DQ9 A9 A25 A10 DQ10 A10 – A11 DQ11 A11 – A12 DQ12 A12 – A13 DQ13 A13 – A14 DQ14 A14 – A15 DQ15 A15 – A16 A16 – – A17 A17 – – A18 A18 – – A19 A19 – – A20 A20 – – A21 A21 – – A22 A22 – – A23 A23 – – A24 A24 – – A25 A25 – – CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Bus Interface Bus Interface The bus interface uses CMOS-compatible address, data, and bus control signals for all bus WRITE and bus READ operations. The address signals are input only, the data signals are input/output (I/O), and the bus control signals are input only. The address inputs are used to specify the internal device location during bus READ and bus WRITE operations. The data I/Os carry commands, data, or status to and from the device. The control signals are used to select and deselect the device, indicate a bus READ or bus WRITE operation, synchronize operations, and reset the device. Do not float any inputs. All inputs must be driven or terminated for proper device operation. Some features may use additional signals. See Signal Descriptions for descriptions of these signals. The following table shows the logic levels that must be applied to the bus control signal inputs for the bus operations listed. Table 6: Bus Control Signals X = Don’t Care; High = VIH; Low = VIL Bus Operations RST# CE# CLK ADV# OE# WE# Address Data I/O RESET LOW X X X X X X High-Z STANDBY HIGH HIGH X X X X X High-Z OUTPUT DISABLE HIGH X X X HIGH X X High-Z Asynchronous READ HIGH LOW X LOW LOW HIGH Valid Output Synchronous READ HIGH LOW Running Toggle LOW HIGH Valid Output WRITE HIGH LOW X X HIGH LOW Valid Input Reset RST# LOW places the device in reset, where device operations are disabled; inputs are ignored, and outputs are placed in High-Z. Any ongoing ERASE or PROGRAM operation will be aborted and data at that location will be indeterminate. RST# HIGH enables normal device operations. A minimum delay is required before the device is able to perform a bus READ or bus WRITE operation. See AC specifications. Standby RST# HIGH and CE# HIGH place the device in standby, where all other inputs are ignored, outputs are placed in High-Z (independent of the level placed on OE#), and power consumption is substantially reduced. Any ongoing ERASE or PROGRAM operation continues in the background and the device draws active current until the operation has finished. Output Disable When OE# is de-asserted with CE# asserted, the device outputs are disabled. Output pins are placed in High-Z. WAIT is de-asserted. CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Bus Interface Asynchronous Read For RCR15 = 1 (default), CE# LOW and OE# LOW place the device in asynchronous bus read mode: • • • • RST# and WE# must be held HIGH; CLK must be tied either HIGH or LOW. Address inputs must be held stable throughout the access, or latched with ADV#. ADV# must be held LOW or can be toggled to latch the address. Valid data is output on the data I/Os after tAVQV, tELQV, tVLQV, or tGLQV, whichever is satisfied last. Asynchronous READ operations are independent of the voltage level on V PP. Synchronous Read For RCR15 = 0, CE# LOW, OE# LOW, and ADV# LOW place the device in synchronous bus read mode: • • • • RST# and WE# must be held HIGH. CLK must be running. The first data word is output tCHQV after the latency count has been satisfied. For array reads, the next address data is output tCHQV after valid CLK edges until the burst length is satisfied. • For nonarray reads, the same address data is output tCHQV after valid CLK edges until the burst length is satisfied. The address for synchronous read operations is latched on the ADV# rising edge or the first rising CLK edge after ADV# LOW, whichever occurs first for devices that support up to 108 MHz. For devices that support up to 133 MHz, the address is latched on the last CLK edge when ADV# is LOW. Burst Wrapping Data stored within the memory array is arranged in rows or word lines. During synchronous burst reads, data words are sensed in groups from the array. The starting address of a synchronous burst read determines which word within the wordgroup is output first, and subsequent words are output in sequence until the burst length is satisfied. The setting of the burst wrap bit (RCR3) determines whether synchronous burst reads will wrap within the wordgroup or continue on to the next wordgroup. CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Bus Interface Figure 4: Main Array Word Lines 16-Word sense group 16-bit data word 0x000030 0 1 2 3 4 5 6 7 8 9 A B C D E F 0x000020 0 1 2 3 4 5 6 7 8 9 A B C D E F 0x000010 0 1 2 3 4 5 6 7 8 9 A B C D E F 0x000000 0 1 2 3 4 5 6 7 8 9 A B C D E F Word lines Address Bit lines 256 bits Figure 5: Wrap/No-Wrap Example 16-bit data word 2 3 4 5 6 7 8 9 A B 2 3 4 5 6 7 8 9 A B Wrap No wrap End-of-Wordline Delay Output delays may occur when the burst sequence crosses the first end-of-wordline boundary onto the start of the next wordline. No delays occur if the starting address is sense-group aligned or if the burst sequence never crosses a wordline boundary. However, if the starting address is not sense-group aligned, the worst-case end-of-wordline delay is one clock cycle less than the initial access latency count used. This delay occurs only once during the burst access. WAIT informs the system of this delay when it occurs. Figure 6: End-of-Wordline Delay 0x000020 0 1 2 3 4 5 6 7 8 9 A B C D E F 0x000010 0 1 2 3 4 5 6 7 8 9 A B C D E F EOWL delay CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Bus Interface Write CE# LOW and WE# LOW place the device in bus write mode, where RST# and OE# must be HIGH, CLK and ADV# are ignored, input data and address are sampled on the rising edge of WE# or CE#, whichever occurs first. During a WRITE operation in MUX devices, address is latched during the rising edge of ADV# OR CE# whichever occurs first and data is latched during the rising edge of WE# OR CE# whichever occurs first. Bus WRITE cycles are asynchronous only. The following conditions apply when a bus WRITE cycle occurs immediately before, or immediately after, a bus READ cycle: • When transitioning from a bus READ cycle to a bus WRITE cycle, CE# or ADV# must toggle after OE# goes HIGH. • When in synchronous read mode (RCR15 = 0; burst clock running), bus WRITE cycle timings tVHWL (ADV# HIGH to WE# LOW), tCHWL (CLK HIGH to WE# LOW), and tWHCH (WE# HIGH to CLK HIGH) must be met. • When transitioning from a bus WRITE cycle to a bus READ cycle, CE# or ADV# must toggle after WE# goes HIGH. CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Command Definitions Command Definitions Commands are written to the device to control all operations. Some commands are two-cycle commands that use a SETUP and a CONFIRM command; other commands are single-cycle commands that use only a SETUP command followed by a data READ cycle or data WRITE cycle. Valid commands and their associated command codes are shown in the table below. Table 7: Command Set Command Code (Setup/Confirm) Description Register Operations PROGRAM READ CONFIGURATION REGISTER 0060h/0003h Programs the read configuration register. The desired read configuration register value is placed on the address bus, and written to the read configuration register when the CONFIRM command is issued. PROGRAM EXTENDED CONFIGURATION REGISTER 0060h/0004h Programs the extended configuration register. The desired extended configuration register value is placed on the address bus, and written to the read configuration register when the CONFIRM command is issued. PROGRAM OTP AREA 00C0h Programs OTP area and OTP lock registers. The desired register data is written to the addressed register on the next WRITE cycle. CLEAR STATUS REGISTER 0050h Clears all error bits in the status register. READ ARRAY 00FFh Places the addressed partition in read array mode. Subsequent reads outputs array data. READ STATUS REGISTER 0070h Places the addressed partition in read status mode. Subsequent reads outputs status register data. READ ID 0090h Places the addressed partition in read ID mode. Subsequent reads from specified address offsets output unique device information. READ CFI 0098h Places the addressed partition in read CFI mode. Subsequent reads from specified address offsets output CFI data. 0041h Programs a single word into the array. Data is written to the array on the next WRITE cycle. The addressed partition automatically switches to read status register mode. 00E9h/00D0h Initiates and executes a BUFFERED PROGRAM operation. Additional bus READ/WRITE cycles are required between the and confirm commands to properly perform this operation. The addressed partition automatically switches to read status register mode. Read Mode Operations Array Programming Operations SINGLE-WORD PROGRAM BUFFERED PROGRAM CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Command Definitions Table 7: Command Set (Continued) Command BUFFERED ENHANCED FACTORY PROGRAM Code (Setup/Confirm) Description 0080h/00D0h Initiates and executes a BUFFERED ENHANCED FACTORY PROGRAM operation. Additional bus READ/WRITE cycles are required after the CONFIRM command to properly perform this operation. The addressed partition automatically switches to read status register mode. 0020h/00D0h Erases a single, addressed block. The ERASE operation commences when the CONFIRM command is issued. The addressed partition automatically switches to read status register mode. Lock Block 0060h/0001h Sets the lock bit of the addressed block. Unlock Block 0060h/00D0h Clears the lock bit of the addressed block. Lock-Down Block 0060h/002Fh Sets the lock-down bit of the addressed block. Block Erase Operations BLOCK ERASE Security Operations Other Operations SUSPEND 00B0h Initiates a suspend of a PROGRAM or BLOCK ERASE operation already in progress when issued to any device address SR[6] = 1 indicates erase suspend SR[2] = 1 indicates program suspend RESUME 00D0h Resumes a suspended PROGRAM or BLOCK ERASE operation when issued to any device address. A program suspend nested within an erase suspend is resumed first. 00BCh/00D0h Performs a blank check of an addressed block. The addressed partition automatically switches to read status register mode. BLANK CHECK CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Status Register Status Register The status register is a 16-bit, read-only register that indicates device status, region status, and operating errors. Upon power-up or exit from reset, the status register defaults to 0080h (device ready, no errors). The status register has status bits and error bits. Status bits are set and cleared by the device; error bits are only set by the device. Error bits are cleared using the CLEAR STATUS REGISTER command or by resetting the device. To read from the status register, first issue the READ STATUS REGISTER command and then read from the device. Note that some commands automatically switch from read mode to read status register mode. Table 8: Status Register Bit Definitions (Default Value = 0080h) Bit Name 15:10 Reserved 9:8 Partition program error 7 Device status 0 = Device is busy; SR[9,8,6:1] are invalid, SR[0] is valid 1 = Device is ready; SR[9:8], SR[6:1] are valid 6 Erase suspend 0 = Erase suspend not in effect 1 = Erase suspend in effect 5:4 Erase error/blank check error program error (command sequence error) 3 VPP error 2 Program suspend 1 Block lock error 0 = Block not locked during program or erase; operation successful 1 = Block locked during program or erase; operation aborted 0 Partition status SR[7]/SR[0] 0 0 = Active PROGRAM or ERASE operation in addressed partition BEFP: Program or verify complete, or ready for data 0 1 = Active PROGRAM or ERASE operation in other partition BEFP: Program or Verify in progress 1 0 = No active PROGRAM or ERASE operation in any partition BEFP: Operation complete 1 1 = Reserved CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN Description Reserved for future use; these bits will always be set to zero SR[9]/SR[8] 0 0 = Region program successful 1 0 = Region program error: Attempted write with object data to control mode region 0 1= Region-program error: Attempted rewrite to object mode region 1 1 = Region-program error: Attempted write using illegal command (SR[4] will also be set along with SR[8,9] for the above error conditions) SR[5]/SR[4] 0 0 = PROGRAM or ERASE operation successful 0 1 = Program error: operation aborted 1 0 = Erase error: Operation aborted; Blank check error: Operation failed 1 1 = Command sequence error: Command aborted 0 = VPP within acceptable limits during program or erase 1 = VPP < VPPLK during program or erase; operation aborted 0 = Program suspend not in effect 1 = Program suspend in effect 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Status Register Clear Status Register The status register has status bits and error bits. Status bits are set and cleared by the device; error bits are only set by the device. Error bits are cleared using the CLEAR STATUS REGISTER command or by resetting the device. Note: Care should be taken to avoid status register ambiguity. If a command sequence error occurs while in erase suspend, SR[5:4] will be set, indicating a command sequence error. When the ERASE operation is resumed (and finishes), any errors that may have occurred during the ERASE operation will be masked by the command sequence error. To avoid this situation, clear the status register prior to resuming any suspended ERASE operation. The CLEAR STATUS REGISTER command functions independent of the voltage level on VPP. Issuing the CLEAR STATUS REGISTER command places the addressed partition in read status register mode. Other partitions are not affected. Table 9: CLEAR STATUS REGISTER Command Bus Cycles Command CLEAR STATUS REGISTER CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN Setup WRITE Cycle Address Bus Setup WRITE Cycle Data Bus Device address 0050h 25 Confirm WRITE Cycle Confirm WRITE Cycle Address Bus Data Bus – – Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Read Configuration Register Read Configuration Register The read configuration register is a volatile, 16-bit read/write register used to select bus read modes and to configure synchronous burst read behavior of the device. The read configuration register is programmed using the PROGRAM READ CONFIGURATION REGISTER command. To read the read configuration register, issue the READ ID command and then read from offset 0005h. Upon power-up or exit from reset, the read configuration register defaults to asynchronous mode (RCR15 = 1; all other bits are ignored). Table 10: Read Configuration Register Bit Definitions Bit Name 15 Read mode Description 14:11 Latency count 0 0 1 1 = Code 3 0 1 0 0 = Code 4 0 1 0 1 = Code 5 0 1 1 0 = Code 6 0 1 1 1 = Code 7 1 0 0 0 = Code 8 1 0 0 1 = Code 9 1 0 1 0 = Code 10 1 0 1 1 = Code 11 1 1 0 0 = Code 12 1 1 0 1 = Code 13 1 1 1 0 = Code 14 Other bit settings are reserved; see the table below for supported clock frequencies 10 WAIT polarity 0 = WAIT signal is LOW-true 1 = WAIT signal is HIGH-true 0 = Synchronous burst mode 1 = Asynchronous mode (default) 9 Reserved 8 WAIT delay 7:5 Reserved Write 0 to reserved bits 4 Bus interface 0 = A/D MUX (default) 1 = AA/D MUX 3 Reserved Write 0 to reserved bits 2:0 Burst length CCMTD-1725822587-2936 MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN Write 0 to reserved bits 0 = WAIT de-asserted with valid data 1 = WAIT de-asserted one clock cycle before valid data 0 1 0 = 8-word burst, wrap only 0 1 1 = 16-word burst, wrap only 1 1 1 = Continuous-burst: linear, no-wrap only Other bit settings are reserved 26 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb, 512Mb, 1Gb StrataFlash Memory Read Configuration Register Programming the Read Configuration Register The read configuration register is programmed by issuing the PROGRAM READ CONFIGURATION REGISTER command. The desired RCR[15:0] settings are placed on A[15:0], while the PROGRAM READ CONFIGURATION REGISTER SETUP command is placed on the data bus. Upon issuing the SETUP command, the read mode of the addressed partition is automatically changed to read status register mode. Next, the CONFIRM command is placed on the data bus while the desired settings for RCR[15:0] are again placed on A[15:0]. Upon issuing the CONFIRM command, the read mode of the addressed partition is automatically switched to read array mode. Because the desired read configuration register value is placed on the address bus, any hardware-connection offsets between the host’s address outputs and the device’s address inputs must be taken into account. For example, if the host’s address outputs are aligned to the device’s address inputs such that host address bit A1 is connected to address bit A0, the desired register value must be left-shifted by one (for example, 2532h