HAL114

MICRONAS INTERMETALL HAL114 Unipolar Hall Switch IC MICRONAS Edition June 10, 1998 6251-456-1DS HAL114 Unipolar Hall Switch IC in CMOS technology Introduction The HAL114 is a Hall switch produced in CMOS technology. The sensor includes a temperature-compensated Hall plate, a Schmitt trigger, and an open-drain output transistor (see Fig. 2). The HAL114 has a unipolar behavior: The output turns low with a magnetic south pole on the branded side of the package (see figures 3 and 4). The output turns high if the magnetic field is removed. The output signal remains high if the magnetic north pole approaches the branded side of the package. The sensor is designed for industrial and automotive applications and operates with supply voltages from 4.5 V to 24 V in the ambient temperature range from –40°C up to 150 °C. The HAL114 is available in a SMD-package (SOT-89A) and in a leaded version (TO-92UA). Features: – operates from 4.5 V to 24 V supply voltage – overvoltage protection – reverse-voltage protection at VDD-pin – short-circuit protected open-drain output by thermal shutdown – operates with magnetic fields from DC to 20 kHz – stable magnetic switching points over a wide supply voltage range – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic switching points – ideal sensor for contactless switches and speed measurement in hostile automotive and industrial environments Specifications – switching type: unipolar – output turns low with magnetic south pole on branded side of package – output turns high if magnetic field is removed 2 GND Marking Code Type A HAL114SO, HAL114UA 114A Temperature Range E 114E C 114C Operating Junction Temperature Range (TJ) A: TJ = –40 °C to +170 °C E: TJ = –40 °C to +100 °C C: TJ = 0 °C to +100 °C The relationship between ambient temperature (TA) and junction temperature (TJ) is explained on page 8. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, E, or C Package: SO for SOT-89A, UA for TO-92UA Type: 114 Example: HAL114UA-E → Type: 114 → Package: TO-92UA → Temperature Range: TJ = –40 °C to +100 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for Hall Sensors”. Solderability – Package SOT-89A: according to IEC68-2-58 – Package TO-92UA: according to IEC68-2-20 VDD 1 OUT 3 Fig. 1: Pin configuration 2 MICRONAS INTERMETALL HAL114 Functional Description The HAL114 is a CMOS integrated circuit with a switching output in response to magnetic fields. It processes the “Hall Voltage” internally: The Hall Voltage is proportional to the magnetic flux component Bz orthogonal to an integrated Hall Plate, in case an electric current is imposed to the plate. The HAL114 compares the Hall Voltage with a predefined threshold and generates the output signal dependent of the direction of the magnetic field. A special circuit compensates for the temperature dependent effects of the IC, as well as the external magnet. A built-in hysteresis eliminates possible oscillations of the output signal adjacent to its switching point so that “output bouncing” is avoided. The output is short-circuit protected by limiting high currents and by sensing excess temperature. Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an internal series resistor up to –15 V. No external reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to –15 V. Outline Dimensions 4.55 ±0.1 0.125 0.7 1.7 2 y sensitive area 4 ±0.2 2.6 ±0.1 top view 1 0.4 0.4 1.5 3.0 2 3 0.4 1.53 ±0.05 branded side 0.05 ±0.05 SPGS7001-6-A/2E HAL114 VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hysteresis Control Short Circuit & Overvoltage Protection Fig. 3: Plastic Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm 1.5 ±0.05 Hall Plate Comparator Output 3 GND 2 OUT 0.3 4.06 ±0.1 sensitive area 2.03 y 3.05 ±0.1 Fig. 2: HAL114 block diagram 0.36 0.48 0.55 1 2 3 0.5 1.27 1.27 2.54 branded side 3.1 14.0 min. 0.42 Dimensions of Sensitive Area 0.4 mm x 0.2 mm Positions of Sensitive Area 45° 0.8 SOT-89A x = 0 ± 0.2 y = 0.98 ± 0.2 TO-92UA x = 0 ± 0.2 y = 1.0 ± 0.2 SPGS7002-6-A/1E x is referenced to the center of the package Fig. 4: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm MICRONAS INTERMETALL 3 HAL114 Absolute Maximum Ratings Symbol VDD –VP –IDD IDDZ VO IO IOmax IOZ TS TJ Parameter Supply Voltage Test Voltage for Supply Reverse Supply Current Supply Current through Protection Device Output Voltage Continuous Output On Current Peak Output On Current Output Current through Protection Device Storage Temperature Range Junction Temperature Range Pin No. 1 1 1 1 3 3 3 3 Min. –15 –242) – –2003) –0.3 – – –2003) –65 –40 –40 Max. 281) – 501) 2003) 281) 30 2503) 2003) 150 150 1704) Unit V V mA mA V mA mA mA °C °C 1) as long as T max is not exceeded J 2) with a 220 Ω series resistance at pin 3) t < 2 ms 4) t < 1000h 1 corresponding to test circuit 1 Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. Recommended Operating Conditions Symbol VDD IO RV Parameter Supply Voltage Continuous Output On Current Series Resistor Pin No. 1 3 1 Min. 4.5 0 – Typ. – – – Max. 24 20 270 Unit V mA Ω Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Test Conditions Typical Characteristics for TJ = 25 °C and VDD = 12 V Symbol VOL VOL IOH Parameter Output Voltage over Temperature Range Output Voltage over Temperature Range Output Leakage Current Pin No. 3 Min. – Typ. 120 Max. 400 Unit mV Test Conditions IOL = 12.5 mA IOL = 20 mA B < Boff, VOH = 24 V, TJ = 25 °C 3 – 190 500 mV µA 3 – – 1 4 MICRONAS INTERMETALL HAL114 Electrical Characteristics, continued Symbol IOH IDD IDD ten(O) tr tf RthJSB case SOT-89A RthJA case TO-92UA Parameter Output Leakage Current over Temperature Range Supply Current Supply Current over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time Pin No. 3 Min. – Typ. – Max. 10 Unit µA Test Conditions B < Boff VOH = 24 V, TJ < 150 °C TJ = 25 °C 1 1 6 3.9 8.2 8.2 11 12 mA mA µs 3 – 6 10 VDD = 12 V VDD = 12 V, RL = 820 Ohm, CL = 20 pF VDD = 12 V, RL = 820 Ohm, CL = 20 pF Fiberglass Substrate pad size see Fig. 6 3 – 85 400 ns Output Fall Time 3 – 60 400 ns Thermal Resistance Junction to Substrate Backside – 150 200 K/W Thermal Resistance Junction to Soldering Point – 150 200 K/W Leads at ambient temperature at a distance of 2 mm from case Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4.5 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter Min. On point BON Off point BOFF Hysteresis BHYS 7.5 4.3 2.8 –40 °C Typ. 21.5 17.4 4.1 Max. 36.0 33.2 5.0 Min. 7.0 4.0 2.8 25 °C Typ. 21.3 17.6 3.7 Max. 34.0 31.2 4.5 Min. 6.3 3.6 2.6 100 °C Typ. 19.6 16.1 3.5 Max. 31.5 28.9 4.0 Min. 6.0 3.6 2.2 170 °C Typ. 19.2 15.8 3.4 Max. 31.0 28.8 4.0 mT mT mT Unit Output Voltage 5.0 2.0 0 BOFF min BOFF BHYS BON BON max 1.0 2.0 Fig. 5: Definition of switching points and hysteresis Fig. 6: Recommended pad size SOT-89A Dimensions in mm MICRONAS INTERMETALL 5 HAL114 mT 30 VDD = 12 V BON BOFF 25 BON 20 BON BOFF mT 30 25 20 15 BOFF 15 TA = –40 °C TA = 25 °C TA = 150 °C 10 10 5 5 0 –50 0 50 100 150 TA 200 °C 0 3 4 5 6 7 VDD 8V Fig. 7: Typical magnetic switching points versus temperature Fig. 9: Typical magnetic switching points versus supply voltage mT 30 BON BOFF mA 15 25 IDD 10 TA = –40 °C TA = 25 °C 20 5 TA = 150 °C 15 TA = –40 °C TA = 25 °C TA = 150 °C 5 0 10 –5 –10 0 0 5 10 15 20 25 VDD 30 V –15 –15 –10 –5 0 5 10 15 20 25 30 V VDD Fig. 8: Typical magnetic switching points versus supply voltage Fig. 10: Typical supply current versus supply voltage 6 MICRONAS INTERMETALL HAL114 mA 12 mV 500 IO = 12.5 mA IDD 10 TA = –40 °C TA = 25 °C VOL 400 8 TA = 150 °C 6 200 4 TA = 25 °C 2 100 TA = –40 °C 0 300 TA = 150 °C 0 0 2 4 6 VDD 8V 0 5 10 15 20 25 VDD 30 V Fig. 11: Typical supply current versus supply voltage Fig. 13: Typical output low voltage versus supply voltage mA 12 mV 500 VDD = 12 V IDD 10 VDD = 4.5 V 8 VDD = 24 V 6 VOL 400 IO = 20 mA 300 200 4 IO = 12.5 mA 100 2 0 –50 0 50 100 150 TA 200 °C 0 –50 0 50 100 150 TA 200 °C Fig. 12: Typical supply current versus temperature Fig. 14: Typical output low voltage versus temperature MICRONAS INTERMETALL 7 HAL114 RV 220 Ω µA 2 10 VDD IOH 1 10 0 10 –1 10 –2 10 –3 10 –4 10 VOH = 24 V VDD = 5 V 4.7 nF 2 GND 1 VDD OUT 3 RL Fig. 16: Recommended application circuit Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). 0 50 100 150 TA 200 °C –50 TJ = TA + ∆T At static conditions, the following equations are valid: – for SOT-89A: – for TO-92UA: ∆T = IDD * VDD * RthJSB ∆T = IDD * VDD * RthJA Fig. 15: Typical output leakage current versus temperature Application Note For electromagnetic immunity, it is recommended to apply a 330 pF minimum capacitor between VDD (pin 1) and Ground (pin 2). For applications requiring robustness to conducted disturbances (transients), a 220 Ω series resistor to pin 1 and a 4.7 nF capacitor between VDD (pin1) and Ground (pin 2) is recommended. The series resistor and the capacitor should be placed as close as possible to the IC. For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Data Sheet History 1. Final data sheet: “HAL114 Unipolar Hall Switch IC”, June 10, 1998, 6251-456-1DS. First release of the final data sheet. MICRONAS INTERMETALL GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@intermetall.de Internet: http://www.intermetall.de Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (06/98) Order No. 6251-456-1DS All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery dates are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, MICRONAS INTERMETALL GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Reprinting is generally permitted, indicating the source. However, our prior consent must be obtained in all cases. 8 MICRONAS INTERMETALL End of Data Sheet Multimedia ICs MICRONAS Back to Summary Back to Data Sheets