HAL300SO-E

MICRONAS HAL300 Differential Hall Effect Sensor IC Edition July 15, 1998 6251-345-1DS MICRONAS HAL300 Differential Hall Effect Sensor IC in CMOS technology Introduction The HAL 300 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperaturecompensated Hall plates (2.05 mm apart) with active offset compensation, a differential amplifier with a Schmitt trigger, and an open-drain output transistor (see Fig. 2). The HAL 300 is a differential sensor which responds to spatial differences of the magnetic field. The Hall voltages at the two Hall plates, S1 and S2, are amplified with a differential amplifier. The differential signal is compared with the actual switching level of the internal Schmitt trigger. Accordingly, the output transistor is switched on or off. The sensor has a bipolar switching behavior and requires positive and negative values of ∆B = BS1 – BS2 for correct operation. The HAL 300 is an ideal sensor for applications with a rotating multi-pole-ring in front of the branded side of the package (see Fig. 4 and Fig. 5), such as ignition timing, anti-lock brake systems, and revolution counting. For applications in which a magnet is mounted on the back side of the package (back-biased applications), the HAL320 is recommended. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature. The sensor is designed for industrial and automotive applications and operates with supply voltages from 4.5 V to 24 V in the ambient temperature range from –40 °C up to 150 °C. The HAL 300 is available in a SMD-package (SOT-89A) and in a leaded version (TO-92UA). Features: – distance between Hall plates: 2.05 mm – operates from 4.5 V to 24 V supply voltage – switching offset compensation at 62 kHz – overvoltage protection – reverse-voltage protection at VDD-pin – short-circuit protected open-drain output by thermal shutdown Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for Hall Sensors”. Example: HAL300UA-E → Type: 300 → Package: TO-92UA → Temperature Range: TJ = –40 °C to +100 °C – operates with magnetic fields from DC to 10 kHz – output turns low with magnetic south pole on branded side of package and with a higher magnetic flux density in sensitive area S1 as in S2 – on-chip temperature compensation circuitry minimizes shifts of the magnetic parameters over temperature and supply voltage range – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of hysteresis – EMC corresponding to DIN 40839 Marking Code Type A HAL300SO, HAL300UA 300A Temperature Range E 300E C 300C Operating Junction Temperature Range (TJ) A: TJ = –40 °C to +170 °C E: TJ = –40 °C to +100 °C C: TJ = 0 °C to +100 °C The relationship between ambient temperature (TA) and junction temperature (TJ) is explained on page 11. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, E, or C Package: SO for SOT-89A, UA for TO-92UA Type: 300 2 Micronas HAL300 Solderability – Package SOT-89A: according to IEC68-2-58 – Package TO-92UA: according to IEC68-2-20 VDD 1 OUT VDD 1 Reverse Voltage & Overvoltage Protection Hall Plate S1 Switch Hall Plate S2 HAL300 Temperature Dependent Bias Hysteresis Control Short Circuit & Overvoltage Protection Comparator Output OUT 3 3 Clock 2 GND GND 2 Fig. 1: Pin configuration Fig. 2: HAL300 block diagram Functional Description This Hall effect sensor is a monolithic integrated circuit with 2 Hall plates 2.05 mm apart that switches in response to differential magnetic fields. If magnetic fields with flux lines at right angles to the sensitive areas are applied to the sensor, the biased Hall plates force Hall voltages proportional to these fields. The difference of the Hall voltages is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the differential magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The builtin hysteresis eliminates oscillation and provides switching behavior of the output without oscillation. Magnetic offset caused by mechanical stress at the Hall plates is compensated for by using the “switching offset compensation technique”: An internal oscillator provides a two phase clock (see Fig. 3). The difference of the Hall voltages is sampled at the end of the first phase. At the end of the second phase, both sampled differential Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The amount of time that elapses from crossing the magnetic switch level to the actual switching of the output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an internal series resistor up to –15 V. No external reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to –15 V. fosc t DB DBON t VOUT VOH VOL t IDD 1/fosc = 16 µs tf t Fig. 3: Timing diagram Micronas 3 HAL300 Outline Dimensions 4.55 ±0.1 0.125 0.7 1.7 2 y y 3.05 ±0.1 4 ±0.2 x1 x2 x1 x2 sensitive area S1 sensitive area S2 1.5 ±0.05 0.3 4.06 ±0.1 2.03 sensitive area S1 sensitive area S2 2.6 ±0.1 top view 1 0.4 2 3 0.4 0.48 0.55 0.36 1 2 3 0.5 1.27 1.27 2.54 branded side 3.1 1.53 ±0.05 0.4 1.5 3.0 14.0 min. 0.42 branded side 0.06 ±0.04 SPGS7001-6-B3/1E 45° SPGS7002-6-B/1E 0.8 Fig. 4: Plastic Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm Fig. 5: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm Dimensions of Sensitive Areas 0.08 mm x 0.17 mm Positions of Sensitive Areas SOT-89A TO-92UA x1 = –1.025 mm ± 0.2 mm x2 = 1.025 mm ± 0.2 mm x2 – x1 = 2.05 mm ± 0.01 mm y = 0.98 mm ± 0.2 mm y = 1.0 mm ± 0.2 mm x1 and x2 are referenced to the center of the package 4 Micronas HAL300 Absolute Maximum Ratings Symbol VDD –VP –IDD IDDZ VO IO IOmax IOZ TS TJ Parameter Supply Voltage Test Voltage for Supply Reverse Supply Current Supply Current through Protection Device Output Voltage Continuous Output On Current Peak Output On Current Output Current through Protection Device Storage Temperature Range Junction Temperature Range Pin No. 1 1 1 1 3 3 3 3 Min. –15 –242) – –2003) –0.3 – – –2003) –65 –40 –40 Max. 281) – 501) 2003) 281) 30 2503) 2003) 150 150 1704) Unit V V mA mA V mA mA mA °C °C 1) as long as T max is not exceeded J 2) with a 220 Ω series resistance at pin 3) t < 2 ms 4) t < 1000h 1 corresponding to test circuit 1 Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. Recommended Operating Conditions Symbol VDD IO VO Rv Parameter Supply Voltage Continuous Output On Current Output Voltage Series Resistor Pin No. 1 3 3 1 Min. 4.5 – – – Max. 24 20 24 270 Unit V mA V Ω Micronas 5 HAL300 Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 °C and VDD = 12 V Symbol IDD IDD VDDZ VOZ VOL VOL IOH IOH fosc fosc ten(O) Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Pin No. 1 1 Min. 4.0 2.5 Typ. 5.5 5 Max. 6.8 7.5 Unit mA mA IDD = 25 mA, TJ = 25 °C, t = 20 ms IOL = 25 mA, TJ = 25 °C, t = 20 ms VDD = 12 V, IO = 20 mA, TJ = 25 °C IO = 20 mA VOH = 4.5 V... 24 V, DB < DBOFF , TJ = 25 °C VOH = 4.5 V... 24 V, DB < DBOFF , TJ ≤ 150 °C TJ = 25 °C Conditions TJ = 25 °C 1 – 28.5 32.5 V 3 – 28 32.5 V Output Voltage 3 – 180 250 mV Output Voltage over Temperature Range Output Leakage Current 3 – 180 400 mV µA µA 3 – 0.06 1 Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency Internal Oscillator Chopper Frequency over Temperature Range Enable Time of Output after Setting of VDD 3 – 0.06 10 – 42 62 75 kHz – 36 62 78 kHz µs 3 – 35 – VDD = 12 V, DB > DBON + 2mT or DB < DBOFF – 2mT VDD = 12 V, RL = 820 Ω, CL = 20 pF VDD = 12 V, RL = 820 Ω, CL = 20 pF Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 7 tr tf RthJSB case SOT-89A RthJS case TO-92UA Output Rise Time 3 – 80 400 ns Output Fall Time 3 – 45 400 ns Thermal Resistance Junction to Substrate Backside – 150 200 K/W Thermal Resistance Junction to Soldering Point – 150 200 K/W 6 Micronas HAL300 Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4.5 V to 24 V Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points (Condition: –10 mT < B0 < 10 mT) Positive flux density values refer to the magnetic south pole at the branded side ot the package. ∆B = BS1 – BS2 Parameter Min. On point ∆BON ∆B > ∆BON Off point ∆BOFF ∆B < ∆BOFF Hysteresis ∆BHYS = ∆BON – ∆BOFF Offset ∆BOFFSET = (∆BON + ∆BOFF)/2 0.2 –40 °C Typ. 1.2 Max. 2.2 Min. 0 25 °C Typ. 1.2 Max. 2.2 Min. –0.5 100 °C Typ. 1.0 Max. 2.5 Min. –2.0 170 °C Typ. 0.5 Max. 3.0 mT Unit –2.2 –1.0 –0.2 –2.2 –1.0 0 –2.5 –1.1 0.5 –3.0 –1.2 2.0 mT 1.2 2.2 3.0 1.2 2.2 3.0 1.0 2.1 3.0 0.8 1.7 3.0 mT –1.1 0.1 1.1 –1.1 0.1 1.1 –1.5 –0.1 1.5 –2.5 –0.5 2.5 mT 5.0 VOH Output Voltage 2.0 VOL 2.0 DBOFF min DBOFF 0 DBHYS DBON DBON max ∆B = BS1 – BS2 1.0 Fig. 6: Definition of switching points and hysteresis Fig. 7: Recommended pad size SOT-89A Dimensions in mm Micronas 7 HAL300 mT 2.5 2.0 DBON DBOFF 1.5 1.0 0.5 0.0 –0.5 –1.0 –1.5 –2.0 –2.5 DBOFF TA = –40 °C TA = 25 °C TA = 150 °C mT 2.5 2.0 DBON DBOFF 1.5 1.0 0.5 0.0 –0.5 –1.0 –1.5 –2.0 –2.5 –50 200 °C DBOFF VDD = 4.5 V VDD = 12 V VDD = 24 V DBON DBON 0 5 10 15 20 25 VDD 30 V 0 50 100 150 TA Fig. 8: Typical magnetic switch points versus supply voltage Fig. 10: Typical magnetic switch points versus ambient temperature mT 2.5 2.0 DBON DBOFF 1.5 1.0 0.5 0.0 –0.5 –1.0 –1.5 –2.0 –2.5 DBOFF mA 25 20 DBON IDD 15 10 TA = –40 °C TA = 25 °C TA = 150 °C 0 –5 –10 –15 –15 –10 –5 5 TA = –40 °C TA = 25 °C TA = 150 °C 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V 0 5 10 15 20 25 30 V VDD Fig. 9: Typical magnetic switch points versus supply voltage Fig. 11: Typical supply current versus supply voltage 8 Micronas HAL300 mA 7 TA = –40 °C 6 IDD 5 TA = 25 °C mV 500 IO = 20 mA VOL 400 4 TA = 150 °C 300 TA = 150 °C 3 200 TA = 25 °C TA = –40 °C 2 100 1 0 1 2 3 4 5 6 VDD 7 8V 0 0 5 10 15 20 25 VDD 30 V Fig. 12: Typical supply current versus supply voltage Fig. 14: Typical output low voltage versus supply voltage mA 7 mV 500 IO = 20 mA 6 IDD 5 VDD = 24 V VDD = 12 V 4 VDD = 4.5 V 3 200 300 VDD = 24 V VOL 400 VDD = 4.5 V 2 100 1 0 –50 0 50 100 150 TA 200 °C 0 –50 0 50 100 150 TA 200 °C Fig. 13: Typical supply current versus ambient temperature Fig. 15: Typical output low voltage versus ambient temperature Micronas 9 HAL300 kHz 70 TA = 25 °C fosc 50 kHz 70 VDD = 12 V 60 fosc 60 50 40 40 30 30 20 20 10 10 0 0 5 10 15 20 25 VDD 30 V 0 –50 0 50 100 150 TA 200 °C Fig. 16: Typical internal chopper frequency versus supply voltage Fig. 18: Typical internal chopper frequency versus ambient temperature kHz 70 TA = 25 °C IOH 50 µA 2 10 1 10 0 10 –1 10 –2 10 –3 10 –4 10 –5 10 –50 VOH = 24 V VDD = 5 V 60 fosc 40 30 20 10 0 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V 0 50 100 150 TA 200 °C Fig. 17: Typical internal chopper frequency versus supply voltage Fig. 19: Typical output leakage current versus ambient temperature 10 Micronas HAL300 Ambient Temperature µA 2 10 1 10 0 10 TA = 125 °C –1 10 –2 10 TA = 75 °C –3 10 –4 10 –5 10 20 VDD = 5 V Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + ∆T At static conditions, the following equations are valid: – for SOT-89A: – for TO-92UA: ∆T = IDD * VDD * RthJSB ∆T = IDD * VDD * RthJA IOH TA = 25 °C For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. 22 24 26 28 VOH 30 V Test Circuits for Electromagnetic Compatibility Test pulses VEMC corresponding to DIN 40839. RV 220 Ω 1 VDD OUT 3 RL 1.2 kΩ Fig. 20: Typical output leakage current versus output voltage Application Notes Mechanical stress can change the sensitivity of the Hall plates and an offset of the magnetic switching points may result. External mechanical stress to the package can influence the magnetic parameters if the sensor is used under back-biased applications. This piezo sensitivity of the sensor IC cannot be completely compensated for by the switching offset compensation technique. For back-biased applications, the HAL 320 is recommended. In such cases, please contact our Application Department. They will provide assistance in avoiding applications which may induce stress to the ICs. This stress may cause drifts of the magnetic parameters indicated in this data sheet. For electromagnetic immunity, it is recommended to apply a 4.7 nF capacitor between VDD (pin 1) and Ground (pin 2). For automotive applications, a 220 W series resistor to pin 1 is recommended. Because of the IDD peak at 4.1 V, the series resistor should not be greater than 270 Ω. The series resistor and the capacitor should be placed as close as possible to the IC. VEMC VP 4.7 nF 2 GND 20 pF Fig. 21: Test circuit 2: test procedure for class A RV 220 Ω 1 VEMC 4.7 nF 2 GND VDD OUT 3 RL 680 Ω Fig. 22: Test circuit 1: test procedure for class C Micronas 11 HAL300 Interferences conducted along supply lines in 12 V onboard systems Product standard: DIN 40839 part 1 Pulse 1 2 3a 3b 4 5 Level IV IV IV IV IV IV Us in V –100 100 –150 100 –7 86.5 Test circuit 1 1 2 2 2 1 Pulses/ Time 5000 5000 1h 1h 5 10 Function Class C C A A A C 10 s pulse interval Remarks 5 s pulse interval 0.5 s pulse interval Electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines Product standard: DIN 40839 part 3 Pulse 1 2 3a 3b Level IV IV IV IV Us in V –30 30 –60 40 Test circuit 2 2 2 2 Pulses/ Time 500 500 10 min 10 min Function Class A A A A Remarks 5 s pulse interval 0.5 s pulse interval Radiated Disturbances Product standard: DIN 40839 part 4 Test Conditions – Temperature: – Supply voltage: – Lab equipment: Room temperature (22 ... 25 °C) 13 V TEM cell 220 MHz (VW standard) with adaptor board 455 mm, device 80 mm over ground – Frequency range: 5 ... 220 MHz; 1 MHz steps – Test circuit 2 with RL = 1.2 kΩ Tested Devices and Results Type HAL300 1) Field strength > 200 V/m Modulation 1 kHz 80 % Result output voltage stable on the level high or low1) low level t0.4 V, high level u90% of VDD 12 Micronas HAL300 Micronas 13 HAL300 14 Micronas HAL300 Micronas 15 HAL300 Data Sheet History 1. Final data sheet: “HAL 300 Differential Hall Effect Sensor IC”, July 15, 1998, 6251-345-1DS. First release of the final data sheet. Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (07/1998) Order No. 6251-345-1DS All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. 16 Micronas HAL 300, HAL 320 Data Sheet Supplement Subject: Data Sheet Concerned: Supplement: Edition: Improvement of SOT-89B Package HAL 300, 6251-345-1DS, Edition July 15, 1998 HAL 320, 6251-439-1DS, Edition July 15, 1998 No. 1/ 6251-532-1DSS July 4, 2000 Changes: – position tolerance of the sensitive area reduced – tolerances of the outline dimensions reduced – thickness of the leadframe changed to 0.15 mm (old 0.125 mm) – HAL 300 now available in SOT-89B – SOT-89A will be discontinued in December 2000 4.55 0.15 0.3 1.7 2 y 4 ±0.2 min. 0.25 1 0.4 0.4 1.5 3.0 2 3 0.4 x1 x2 sensitive area S1 ∅ 0.2 sensitive area S2 ∅ 0.2 2.55 top view 1.15 branded side 0.06 ±0.04 SPGS0022-5-B3/1E Position of sensitive area HAL 300 x1+x2 x1= x2 y (2.05±0.001) mm 1.025 mm nominal 0.95 mm nominal HAL 320 (2.25±0.001) mm 1.125 mm nominal 0.95 mm nominal Note: A mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given. Position tolerances of the sensitive areas are defined in the package diagram. Micronas page 1 of 1