HAL516SF-K

Hardware Documentation Data Sheet HAL 5xy Hall-Effect Sensor Family ® Edition Jan. 11, 2010 DSH000020_004E HAL 5xy Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks – HAL DATA SHEET Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy Contents Page 4 4 4 5 5 5 6 7 8 8 13 13 13 13 14 15 16 22 22 24 26 28 30 32 34 36 38 40 42 44 46 46 46 46 46 48 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 4.7. 4.8. 4.9. 4.10. 4.11. 4.12. 5. 5.1. 5.2. 5.3. 5.4. 6. Title Introduction Features: Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability and Welding Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Overview Type Description HAL 501 HAL 502 HAL 503 HAL 504 HAL 505 HAL 506 HAL 507 HAL 508 HAL 509 HAL 516 HAL 519 HAL 523 Application Notes Ambient Temperature Extended Operating Conditions Start-Up Behavior EMC and ESD Data Sheet History Micronas Jan. 11. 2010; DSH000020_004EN 3 HAL 5xy Hall Effect Sensor Family in CMOS technology Release Note: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL 5xy family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The sensors of this family differ in the switching behavior and the switching points. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from −40 °C up to 150 °C. All sensors are available in the SMD-package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2. Type 501 502 503 504 505 506 507 508 509 516 519 Switching Behavior bipolar unipolar unipolar unipolar latching unipolar unipolar unipolar unipolar unipolar with inverted output unipolar with inverted output (north polarity) unipolar Sensitivity very high low high medium low high medium medium low high high 1.2. Family Overview DATA SHEET The types differ according to the magnetic flux density values for the magnetic switching points and the temperature behavior of the magnetic switching points, and the mode of switching. see Page 22 24 26 28 30 32 34 36 38 40 42 1.1. Features: – switching offset compensation at typically 62 kHz – operates from 3.8 V to 24 V supply voltage – overvoltage protection at all pins – reverse-voltage protection at VDD-pin – magnetic characteristics are robust regarding mechanical stress effects – short-circuit protected open-drain output by thermal shut down – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – constant switching points over a wide supply voltage range – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics – ideal sensor for applications in extreme automotive and industrial environments – EMC corresponding to ISO 7637 523 low 44 Latching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. Bipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. 4 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = −40 °C to +170 °C K: TJ = −40 °C to +140 °C Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to Section 5.1. on page 46 for details. Unipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output: The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output Sensitive to North Pole: The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side. 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A or K Package: SF for SOT89B-1 UA for TO92UA Type: 5xy Example: HAL505UA-K → Type: 505 → Package: TO92UA → Temperature Range: TJ = −40 °C to +140 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for Hall Sensors”. 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type A HAL 501 HAL 502 HAL 503 HAL 504 HAL 505 HAL 506 HAL 507 HAL 508 HAL 509 HAL 516 HAL 519 HAL 523 501A 502A 503A 504A 505A 506A 507A 508A 509A 516A 519A 523A Temperature Range K 501K 502K 503K 504K 505K 506K 507K 508K 509K 516K 519K 523K Micronas Jan. 11. 2010; DSH000020_004EN 5 HAL 5xy 1.6. Solderability and Welding DATA SHEET Soldering During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1 VDD 3 OUT 2, 4 GND Fig. 1–1: Pin configuration 6 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy 2. Functional Description The HAL 5xx sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Thus, an internal oscillator provides a two-phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the output pin and VDD pin together with external series resistors. Reverse current is limited at the VDD pin by an internal series resistor up to −15 V. No external reverse protection diode is needed at the VDD pin for reverse voltages ranging from 0 V to −15 V. VDD 1 Reverse Voltage & Overvoltage Protection HAL 5xy HAL 5xx Temperature Dependent Bias Hysteresis Control Short Circuit & Overvoltage Protection Hall Plate Switch Comparator Output OUT 3 Clock GND 2 Fig. 2–1: HAL 5xx block diagram fosc t B BON t VOUT VOH VOL t IDD 1/fosc = 16 μs tf t Fig. 2–2: Timing diagram Micronas Jan. 11. 2010; DSH000020_004EN 7 HAL 5xy 3. Specifications 3.1. Outline Dimensions DATA SHEET Fig. 3–1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Ordering code: SF Weight approximately 0.034 g 8 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy Fig. 3–2: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.106 g Micronas Jan. 11. 2010; DSH000020_004EN 9 HAL 5xy DATA SHEET Fig. 3–3: TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread Weight approximately 0.106 g 10 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy Fig. 3–4: TO92UA-1: Dimensions ammopack inline, spread Micronas Jan. 11. 2010; DSH000020_004EN 11 HAL 5xy DATA SHEET Fig. 3–5: TO92UA-2: Dimensions ammopack inline, not spread 12 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy 3.2. Dimensions of Sensitive Area 0.25 mm × 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-1 y A4 D1 H1 0.95 mm nominal 0.3 mm nominal see drawing not applicable TO92UA-1/-2 1.0 mm nominal 0.3 mm nominal 3.05 mm +/- 0.05 mm min. 21 mm max. 23.1 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol VDD VO IO TJ 1) 2) Parameter Supply Voltage Output Voltage Continuous Output On Current Junction Temperature Range Pin No. 1 3 3 Min. −15 −0.3 − −40 Max. 281) 281) 501) 1702) Unit V V mA °C as long as TJmax is not exceeded t < 1000 h 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Micronas Jan. 11. 2010; DSH000020_004EN 13 HAL 5xy 3.5. Recommended Operating Conditions DATA SHEET Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol VDD IO VO Parameter Supply Voltage Continuous Output On Current Output Voltage (output switched off) Pin No. 1 3 3 Min. 3.8 0 0 Max. 24 20 24 Unit V mA V 14 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy 3.6. Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 12 V Symbol IDD IDD VDDZ VOZ VOL VOL IOH IOH fosc ten(O) tr tf RthJSB case SOT89B-1 RthJA case TO92UA-1, TO92UA-2 1) Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Output Voltage Output Voltage over Temperature Range Output Leakage Current Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency Enable Time of Output after Setting of VDD Output Rise Time Output Fall Time Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Soldering Point Pin No. 1 1 1 3 3 3 3 3 − 1 3 3 − Min. 2.3 1.6 − − − − − − − − − − − Typ. 3 3 28.5 28 130 130 0.06 − 62 50 75 50 150 Max. 4.2 5.2 32 32 280 400 0.1 10 − − 400 400 200 Unit mA mA V V mV mV μA μA kHz μs ns ns K/W Conditions T J = 2 5 °C IDD = 25 mA, TJ = 25 °C, t = 20 ms IOH = 25 mA, TJ = 25 °C, t = 20 ms IOL = 20 mA , TJ = 25 °C IOL = 20 mA Output switched off, TJ = 25 °C, VOH = 3.8 to 24 V Output switched off, TJ ≤150 °C, V OH = 3.8 to 24 V VDD = 12 V 1) VDD = 12 V, RL = 820 Ohm, CL = 20 pF Fiberglass Substrate 30 mm x 10 mm x 1.5 mm, pad size see Fig. 3–6 − − 150 200 K/W B > BON + 2 mT or B < BOFF − 2 mT for HAL50x, B > BOFF + 2 mT or B < BON − 2 mT for HAL51x 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3–6: Recommended pad size SOT89B-1 Dimensions in mm Micronas Jan. 11. 2010; DSH000020_004EN 15 HAL 5xy 3.7. Magnetic Characteristics Overview at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Switching Type HAL 501 bipolar DATA SHEET Parameter TJ −40 °C 25 °C 170 °C On point BON Min. −0.8 −0.5 −1.5 1 1 0.9 6.4 6 4 10.3 9.5 8.5 11.8 11 9.4 4.3 3.8 3.2 15.5 15.0 10.5 15.5 15 12.7 23.1 23.1 21.3 2.1 2 1.7 Off point BOFF Min. −2.5 −2.3 −2.5 −5 −4.5 −4.3 −10.8 −10 −8.9 5.3 5 4.2 −18.3 −17 −16.1 2.1 2 1.7 14.0 13.5 9.0 14 13.5 11.4 19.9 19.9 18.3 4.3 3.8 3.2 Hysteresis BHYS Min. 0.5 0.5 0.4 4.5 4.5 3.5 14.6 13.6 11 4.4 4 3.2 26 24 20 1.6 1.5 0.9 1.6 1.5 0.8 1.6 1.5 1 2.9 2.8 2.5 1.6 1.5 0.9 Unit Typ. 0.6 0.5 0.7 2.8 2.6 2.3 8.6 8 6.4 13 12 10.2 15 13.5 11.7 5.9 5.5 4.6 19.6 18.3 13.7 19 18 15.3 27.4 26.8 25.4 3.8 3.5 3 Max. 2.5 2.3 3 5 4.5 4.3 10.8 10 8.9 15.7 14.5 13.7 18.3 17 16.1 7.7 7.2 6.8 22.5 20.7 20.0 21.9 20.7 20 31.1 30.4 28.9 5.4 5 5.2 Typ. −0.8 −0.7 −0.2 −2.8 −2.6 −2.3 −8.6 −8 −6 7.5 7 5.9 −15 −13.5 −11.7 3.8 3.5 3 17.1 16.2 12.3 16.7 16 13.6 23.8 23.2 22.1 5.9 5.5 4.6 Max. 0.8 0.5 2 −1 −1 −0.9 −6.4 −6 −4 9.6 9 8.5 −11.8 −11 −9.4 5.4 5 5.2 21.5 19.0 18.0 20 19 18.3 27.2 26.6 25.3 7.7 7.2 6.8 Typ. 1.4 1.2 0.9 5.6 5.2 4.6 17.2 16 12.4 5.5 5 4.3 30 27 23.4 2.1 2 1.6 2.5 2.1 1.4 2.3 2 1.7 3.6 3.5 3.3 2.1 2 1.6 Max. 2 1.9 1.8 7.2 7 6.8 20.6 18 16 6.5 6.5 6.4 34 32 31.3 2.8 2.7 2.6 5.2 2.7 2.4 2.8 2.7 2.6 3.9 3.9 3.8 2.8 2.7 2.6 mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT HAL 502 latching −40 °C 25 °C 170 °C HAL 503 latching −40 °C 25 °C 170 °C HAL 504 unipolar −40 °C 25 °C 170 °C HAL 505 latching −40 °C 25 °C 170 °C HAL 506 unipolar −40 °C 25 °C 170 °C HAL 507 unipolar −40 °C 25 °C 170 °C HAL 508 unipolar −40 °C 25 °C 170 °C HAL 509 unipolar −40 °C 25 °C 170 °C HAL 516 unipolar inverted −40 °C 25 °C 170 °C Note: For detailed descriptions of the individual types, see pages 22 and following. 16 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy Magnetic Characteristics Overview, continued Sensor Switching Type HAL 519 unipolar inverted HAL 523 unipolar Parameter TJ −40 °C 25 °C 170 °C −40 °C 25 °C 170 °C On pointON Min. −5.4 −5 −5.2 28 28 28 Off pointOFF Min. −7.7 −7.2 −6.8 18 18 18 Hysteresis BHYS Min. 1.6 1.5 0.9 7 7 7 Unit Typ. −3.8 −3.6 −3.0 34.5 34.5 34.5 Max. −2.1 −2 −1.5 42 42 42 Typ. −5.9 −5.5 −4.6 24 24 24 Max. −4.3 −3.8 −2.8 30 30 30 Typ. 2.1 1.9 1.6 10.5 10.5 10.5 Max. 2.8 2.7 2.6 14 14 14 mT mT mT mT mT mT Note: For detailed descriptions of the individual types, see pages 22 and following Micronas Jan. 11. 2010; DSH000020_004EN 17 HAL 5xy DATA SHEET mA 25 20 IDD 15 HAL 5xx mA 5 HAL 5xx IDD 4 VDD = 24 V 10 5 0 −5 −10 −15 −15 TA = −40 °C TA = 25 °C TA = 170 °C 3 VDD = 12 V 2 VDD = 3.8 V 1 −5 5 15 25 35 V 0 −50 0 50 100 150 TA 200 °C VDD Fig. 3–7: Typical supply current versus supply voltage Fig. 3–9: Typical supply current versus ambient temperature mA 5.0 4.5 IDD 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 2 3 4 5 6 HAL 5xx kHz 100 90 HAL 5xx TA = −40 °C TA = 25 °C TA = 100 °C TA = 170 °C fosc 80 70 60 50 40 30 20 10 0 −50 0 50 VDD = 3.8 V VDD = 4.5 V ... 24 V 7 8V 100 150 TA 200 °C VDD Fig. 3–8: Typical supply current versus supply voltage Fig. 3–10: Typ. internal chopper frequency versus ambient temperature 18 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy kHz 100 90 fosc 80 70 60 HAL 5xx mV 400 350 VOL 300 TA = 170 °C 250 HAL 5xx IO = 20 mA TA = 25 °C TA = −40 °C TA = 100 °C 200 150 100 TA = 25 °C TA = −40 °C 50 40 30 20 10 0 0 5 10 15 TA = 170 °C 50 0 20 25 VDD 30 V 0 5 10 15 20 VDD 25 30 V Fig. 3–11: Typ. internal chopper frequency versus supply voltage Fig. 3–13: Typical output low voltage versus supply voltage kHz 100 90 fosc 80 70 60 50 40 30 20 10 0 3.0 3.5 4.0 4.5 5.0 TA = 25 °C HAL 5xx mV 600 HAL 5xx IO = 20 mA VOL 500 400 TA = −40 °C 300 TA = 170 °C TA = 100 °C 200 TA = 25 °C 100 TA = −40 °C TA = 170 °C 5.5 6.0 V 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD VDD Fig. 3–12: Typ. internal chopper frequency versus supply voltage Fig. 3–14: Typical output low voltage versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 19 HAL 5xy DATA SHEET mV 400 HAL 5xx IO = 20 mA VDD = 3.8 V μΑ 102 HAL 5xx IOH 300 101 I OH 100 VOH = 24 V 10−1 VDD = 4.5 V VDD = 24 V 200 10−2 VOH = 3.8 V 100 10−3 10−4 10−5 −50 0 −50 0 50 100 150 TA 200 °C 0 50 100 150 TA 200 °C Fig. 3–15: Typ. output low voltage versus ambient temperature Fig. 3–17: Typ. output leakage current versus ambient temperature μΑ 104 103 IOH 102 101 100 10−1 10−2 10−3 10−4 10−5 10−6 15 TA = 25 °C HAL 5xx dB μV 30 HAL 5xx VP = 12 V TA = 25 ˚C Quasi-PeakMeasrement max. spurious signals IDD TA = 170 °C 20 10 TA = 150 °C TA = 100 °C 0 -10 TA = −40 °C -20 20 25 30 VOH 35 V -30 0.01 0.10 1 10 f 100 1000 MHz Fig. 3–16: Typ. output high current versus output voltage Fig. 3–18: Typ. spectrum of supply current 20 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy dB μV 80 70 VDD 60 50 40 30 20 10 0 0.01 HAL 5xx VP = 12 V TA = 25 °C Quasi-PeakMeasrement test circuit 2 max. spurious signals 0.10 1 10 f 100 1000 MHz Fig. 3–19: Typ. spectrum of supply current Micronas Jan. 11. 2010; DSH000020_004EN 21 HAL 501 4. Type Description 4.1. HAL 501 The HAL 501 is the most sensitive sensor of this family with bipolar switching behavior (see Fig. 4.1.). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Applications DATA SHEET The HAL 501 is the optimal sensor for applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: – applications with large air gap or weak magnets, – rotating speed measurement, – commutation of brushless DC motors, and – CAM shaft sensors, and – magnetic encoders. Output Voltage VO BHYS Magnetic Features: – switching type: bipolar – very high sensitivity – typical BON: 0.5 mT at room temperature – typical BOFF: −0.7 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BOFF 0 BON B VOL Fig. 4–1: Definition of magnetic switching points for HAL 501 Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. −0.8 −0.5 −1.2 −1.5 On point BON Typ. 0.6 0.5 0.6 0.7 Max. 2.5 2.3 2.8 3 Off point BOFF Min. −2.5 −2.3 −2.5 −2.5 Typ. −0.8 −0.7 −0.5 −0.2 Max. 0.8 0.5 1.3 2 Hysteresis BHYS Min. 0.5 0.5 0.5 0.4 Typ. 1.4 1.2 1.1 0.9 Max. 2 1.9 1.8 1.8 −1.4 Magnetic Offset BOFFSET Min. Typ. −0.1 −0.1 0 0.2 1.4 Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 22 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 501 mT 3 HAL 501 mT 3 HAL 501 BONmax BON BOFF 2 BON BOFF 2 VDD = 3.8 V VDD = 4.5 ... 24 V BOFFmax 1 1 BON 0 BOFFtyp BONtyp 0 −1 TA = −40 °C −2 TA = 25 °C TA = 100 °C TA = 170 °C −3 0 5 10 15 20 BOFF −1 BONmin −2 BOFFmin 25 VDD 30 V −3 −50 0 50 100 150 TA, TJ 200 °C Fig. 4–2: Typ. magnetic switching points versus supply voltage Fig. 4–4: Magnetic switching points versus temperature mT 3 HAL 501 Note: In the diagram “Magnetic switching points versus temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 2 1 BON 0 −1 TA = −40 °C TA = 25 °C TA = 100 °C TA = 170 °C BOFF −2 −3 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–3: Typ. Magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 23 HAL 502 4.2. HAL 502 The HAL 502 is the most sensitive latching sensor of this family (see Fig. 4–5). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: – switching type: latching – high sensitivity – typical BON: 2.6 mT at room temperature – typical BOFF: −2.6 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1000 ppm/K BOFF 0 BON Applications DATA SHEET The HAL 502 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: – applications with large air gap or weak magnets, – rotating speed measurement, – commutation of brushless DC motors, – CAM shaft sensors, and – magnetic encoders. Output Voltage VO BHYS VOL B Fig. 4–5: Definition of magnetic switching points for the HAL 502 Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. 1 1 0.9 0.9 On point BON Typ. 2.8 2.6 2.4 2.3 Max. 5 4.5 4.3 4.3 Off point BOFF Min. −5 −4.5 −4.3 −4.3 Typ. −2.8 −2.6 −2.4 −2.3 Max. −1 −1 −0.9 −0.9 Hysteresis BHYS Min. 4.5 4.5 3.7 3.5 Typ. 5.6 5.2 4.8 4.6 Max. 7.2 7 6.8 6.8 Magnetic Offset Min. − −1.5 − − Typ. 0 0 0 0 Max. − 1.5 − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 24 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 502 mT 6 HAL 502 mT 6 BONmax HAL 502 BON BOFF 4 BON 2 TA = −40 °C 0 TA = 25 °C TA = 100 °C TA = 170 °C −2 BOFF BON BOFF 4 BONtyp BONmin VDD = 3.8 V 0 VDD = 4.5 ... 24 V BOFFmax −2 BOFFtyp 2 −4 −4 BOFFmin −6 0 5 10 15 20 25 VDD 30 V −6 −50 0 50 100 150 TA, TJ 200 °C Fig. 4–6: Typ. magnetic switching points versus supply voltage Fig. 4–8: Magnetic switching points versus temperature mT 6 HAL 502 Note: In the diagram “Magnetic switching points versus temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 4 BON 2 TA = −40 °C TA = 25 °C 0 TA = 100 °C TA = 170 °C −2 BOFF −4 −6 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–7: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 25 HAL 503 4.3. HAL 503 The HAL 503 is a latching sensor (see Fig. 4–9). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: – switching type: latching – medium sensitivity – typical BON: 7.6 mT at room temperature – typical BOFF: −7.6 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1000 ppm/K BOFF 0 BON Applications DATA SHEET The HAL 503 is the optimal sensor for applications with alternating magnetic signals such as: – multipole magnet applications, – rotating speed measurement, – commutation of brushless DC motors, and – window lifters. Output Voltage VO BHYS VOL B Fig. 4–9: Definition of magnetic switching points for the HAL 503 Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. 6.4 6 4.4 4 On point BON Typ. 8.4 7.6 6.7 6.4 Max. 10.8 10 9.2 8.9 Off point BOFF Min. −10.8 −10 −9.2 −8.9 Typ. −8.6 −7.6 −6.4 −6 Max. −6.4 −6 −4.4 −4 Hysteresis BHYS Min. 14.6 13.6 11.5 11 Typ. 17 15.2 13.1 12.4 Max. 20.6 18 16.5 16 Magnetic Offset Min. − −1.5 − − Typ. −0.1 0 0.1 0.2 Max. − 1.5 − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 26 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 503 mT 12 HAL 503 mT 12 BONmax HAL 503 BON BOFF BON 8 BON BOFF 8 BONtyp 4 BONmin VDD = 3.8 V VDD = 4.5... 24 V -4 BOFFmax BOFFtyp 4 TA = −40 °C 0 TA = 25 °C TA = 100 °C TA = 170 °C −4 0 −8 BOFF −12 0 5 10 15 20 25 VDD 30 V -8 BOFFmin −12 −50 0 50 100 150 TA, TJ 200 °C Fig. 4–10: Typ. magnetic switching points versus supply voltage Fig. 4–12: Magnetic switching points versus temperature mT 12 HAL 503 BON BOFF BON 8 Note: In the diagram “Magnetic switching points versus ambient temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 4 TA = −40 °C TA = 25 °C TA = 100 °C TA = 170 °C 0 −4 −8 BOFF −12 3.0 6.0 V 3.5 4.0 4.5 5.0 5.5 VDD Fig. 4–11: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 27 HAL 504 4.4. HAL 504 The HAL 504 is a unipolar switching sensor (see Fig. 4–13). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Applications DATA SHEET The HAL 504 is the optimal sensor for applications with one magnetic polarity such as: – solid state switches, – contactless solution to replace microswitches, – position and end-point detection, and – rotating speed measurement. Output Voltage VO BHYS Magnetic Features: – switching type: unipolar, – medium sensitivity – typical BON: 12 mT at room temperature – typical BOFF: 7 mT at room temperature – typical temperature coefficient of magnetic switching points is −1000 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz. 0 BOFF VOL BON B Fig. 4–13: Definition of magnetic switching points for the HAL 504 Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. 10.3 9.5 8.7 8.5 On point BON Typ. 13 12 10.6 10.2 Max. 15.7 14.5 13.9 13.7 Off point BOFF Min. 5.3 5 4.4 4.2 Typ. 7.5 7 6.1 5.9 Max. 9.6 9 8.6 8.5 Hysteresis BHYS Min. 4.4 4 3.4 3.2 Typ. 5.5 5 4.5 4.3 Max. 6.5 6.5 6.4 6.4 Magnetic Offset Min. − 7.2 − − Typ. 10.2 9.5 8.4 8 Max. − 11.8 − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 28 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 504 mT 18 16 14 12 10 8 6 TA = −40 °C 4 2 0 0 5 10 15 20 TA = 25 °C TA = 100 °C TA = 170 °C HAL 504 mT 18 16 BONmax 14 HAL 504 BON BOFF BON BOFF BON 12 10 8 6 BOFF 4 2 0 −50 BOFFmin VDD = 3.8 V VDD = 4.5 ... 24 V 0 50 100 150 TA, TJ 200 °C BONmin BOFFmax BOFFtyp BONtyp 25 VDD 30 V Fig. 4–14: Typ. magnetic switching points versus supply voltage Fig. 4–16: Magnetic switching points versus temperature mT 18 16 14 12 10 8 HAL 504 Note: In the diagram “Magnetic switching points versus temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF BON BOFF 6 TA = −40 °C 4 2 0 3.0 TA = 25 °C TA = 100 °C TA = 170 °C 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–15: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 29 HAL 505 4.5. HAL 505 The HAL 505 is a latching sensor (see Fig. 4–17). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Applications DATA SHEET The HAL 505 is the optimal sensor for applications with alternating magnetic signals such as: – multipole magnet applications, – rotating speed measurement, – commutation of brushless DC motors, and – window lifters. Output Voltage VO BHYS Magnetic Features: – switching type: latching, – low sensitivity – typical BON: 13.5 mT at room temperature – typical BOFF: −13.5 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1000 ppm/K BOFF 0 VOL BON B Fig. 4–17: Definition of magnetic switching points for the HAL 505 Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. 11.8 11 9.7 9.4 On point BON Typ. 15 13.5 12 11.7 Max. 18.3 17 16.3 16.1 Off point BOFF Min. -18.3 -17 -16.3 -16.1 Typ. -15 -13.5 -12 -11.7 Max. -11.8 -11 -9.7 -9.4 Hysteresis BHYS Min. 26 24 21 20 Typ. 30 27 24.2 23.4 Max. 34 32 31.3 31.3 Magnetic Offset Min. − -1.5 − − Typ. 0 0 0 0 Max. − 1.5 − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 30 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 505 mT 20 BON 15 BOFF 10 5 TA = −40 °C 0 −5 −10 −15 −20 TA = 25 °C TA = 100 °C TA = 170 °C HAL 505 mT 20 BONmax BON 15 BOFF 10 5 0 −5 −10 −15 −20 −50 BOFFmin 0 50 100 BOFFmax VDD = 3.8 V VDD = 4.5 ... 24 V BONmin HAL 505 BON BONtyp BOFFtyp BOFF 0 5 10 15 20 25 VDD 30 V 150 TA, TJ 200 °C Fig. 4–18: Typ. magnetic switching points versus supply voltage Fig. 4–20: Magnetic switching points versus temperature mT 20 BON 15 BOFF 10 5 0 −5 −10 −15 −20 3.0 TA = −40 °C TA = 25 °C TA = 100 °C TA = 170 °C HAL 505 BON Note: In the diagram “Magnetic switching points versus ambient temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–19: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 31 HAL 506 4.6. HAL 506 The HAL 506 is the most sensitive unipolar switching sensor of this family (see Fig. 4–21). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 5xx family, the HAL 516 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Magnetic Features: – switching type: unipolar, – high sensitivity – typical BON: 5.5 mT at room temperature – typical BOFF: 3.5 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1000 ppm/K 0 BOFF BON Applications DATA SHEET The HAL 506 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position such as: – applications with large air gap or weak magnets, – solid state switches, – contactless solution to replace microswitches, – position and end point detection, and – rotating speed measurement. Output Voltage VO BHYS VOL B Fig. 4–21: Definition of magnetic switching points for the HAL 506 Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD =3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. 4.3 3.8 3.4 3.2 On point BON Typ. 5.9 5.5 4.8 4.6 Max. 7.7 7.2 6.9 6.8 Off point BOFF Min. 2.1 2 1.8 1.7 Typ. 3.8 3.5 3.1 3 Max. 5.4 5 5.1 5.2 Hysteresis BHYS Min. 1.6 1.5 1 0.9 Typ. 2.1 2 1.7 1.6 Max. 2.8 2.7 2.6 2.6 Magnetic Offset Min. − 3.8 − − Typ. 4.8 4.5 4 3.8 Max. − 6.2 − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 32 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 506 mT 8 7 6 5 4 3 TA = −40 °C 2 1 0 TA = 25 °C TA = 100 °C TA = 170 °C HAL 506 mT 8 BONmax 7 6 5 BOFFmax 4 3 BOFFmin 2 1 0 −50 VDD = 3.8 V VDD = 4.5 ... 24 V HAL 506 BON BOFF BON BON BOFF BONtyp BONmin BOFFtyp BOFF 0 5 10 15 20 25 VDD 30 V 0 50 100 150 TA, TJ 200 °C Fig. 4–22: Typ. magnetic switching points versus supply voltage Fig. 4–24: Magnetic switching points versus temperature mT 8 7 HAL 506 Note: In the diagram “Magnetic switching points versus temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF BON 6 5 4 3 TA = −40 °C 2 1 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD TA = 25 °C TA = 100 °C TA = 170 °C BOFF Fig. 4–23: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 33 HAL 507 4.7. HAL 507 The HAL 507 is a unipolar switching sensor (see Fig. 4–25). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Applications DATA SHEET The HAL 507 is the optimal sensor for applications with one magnetic polarity such as: – solid state switches, – contactless solution to replace micro switches, – position and end point detection, and – rotating speed measurement. Output Voltage VO BHYS Magnetic Features: – switching type: unipolar – medium sensitivity – typical BON: 18.3 mT at room temperature – typical BOFF: 16.2 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1700 ppm/K 0 BOFF VOL BON B Fig. 4–25: Definition of magnetic switching points for the HAL 507 Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. 15.5 15.0 11.5 10.5 On point BON Typ. 19.6 18.3 14.8 13.7 Max. 22.5 20.7 20.2 20.0 Off point BOFF Min. 14.0 13.5 10.0 9.0 Typ. 17.1 16.2 13.2 12.3 Max. 21.5 19.0 18.2 18.0 Hysteresis BHYS Min. 1.6 1.5 1.0 0.8 Typ. 2.5 2.1 1.6 1.4 Max. 5.2 2.7 2.6 2.4 Magnetic Offset Min. − − − − Typ. 18.3 17.2 14 13 Max. − − − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 34 Jan. 11. 2010; 000020_004ENDS Micronas DATA SHEET HAL 507 mT 25 HAL 507 mT 25 HAL 507 BON BOFF 20 BON BON BOFF BONmax 20 BOFFmax 15 BOFF 10 TA = −40 °C TA = 25 °C 5 TA = 100 °C TA = 170 °C 15 BONtyp BOFFtyp 10 BONmin BOFFmin 5 VDD = 3.8 V VDD = 4.5 ... 24 V 0 0 5 10 15 20 25 VDD 30 V 0 −50 0 50 100 150 TA, TJ 200 °C Fig. 4–26: Typ. magnetic switching points versus supply voltage Fig. 4–28: Magnetic switching points versus temperature mT 25 HAL 507 Note: In the diagram “Magnetic switching points versus ambient temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 20 BON 15 BOFF 10 TA = −40 °C TA = 25 °C 5 TA = 100 °C TA = 170 °C 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–27: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; 000020_004ENDS 35 HAL 508 4.8. HAL 508 The HAL 508 is a unipolar switching sensor (see Fig. 4–29). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: – switching type: unipolar, – medium sensitivity – typical BON: 18 mT at room temperature – typical BOFF: 16 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1000 ppm/K 0 BOFF BON Applications DATA SHEET The HAL 508 is the optimal sensor for applications with one magnetic polarity such as: – solid state switches, – contactless solution to replace microswitches, – position and end-point detection, and – rotating speed measurement. Output Voltage VO BHYS VOL B Fig. 4–29: Definition of magnetic switching points for the HAL 508 Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. 15.5 15 13.2 12.7 On point BON Typ. 19 18 15.8 15.3 Max. 21.9 20.7 20.2 20 Off point BOFF Min. 14 13.5 11.9 11.4 Typ. 16.7 16 14.1 13.6 Max. 20 19 18.5 18.3 Hysteresis BHYS Min. 1.6 1.5 1.1 1 Typ. 2.3 2 1.7 1.7 Max. 2.8 2.7 2.6 2.6 Magnetic Offset Min. 14 Typ. 17.8 17 15 14.4 Max. 20 mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 36 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 508 mT 25 HAL 508 mT 25 HAL 508 BON BOFF 20 BON BON BOFF BONmax 20 BOFFmax 15 BOFF 10 TA = −40 °C TA = 25 °C 5 TA = 100 °C TA = 170 °C 15 BONtyp BOFFtyp BONmin 10 BOFFmin VDD = 3.8 V 5 VDD = 4.5 ... 24 V 0 0 5 10 15 20 25 VDD 30 V 0 −50 0 50 100 150 TA, TJ 200 °C Fig. 4–30: Typ. magnetic switching points versus supply voltage Fig. 4–32: Magnetic switching points versus temperature mT 25 HAL 508 Note: In the diagram “Magnetic switching points versus temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 20 BON 15 BOFF 10 TA = −40 °C TA = 25 °C TA = 100 °C 5 TA = 170 °C 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–31: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 37 HAL 509 4.9. HAL 509 The HAL 509 is a unipolar switching sensor (see Fig. 4–33). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: – switching type: unipolar, – low sensitivity – typical BON: 26.8 mT at room temperature – typical BOFF: 23.2 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −300 ppm/K 0 BOFF BON Applications DATA SHEET The HAL 509 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: – solid state switches, – contactless solution to replace microswitches, – position and end-point detection, and – rotating speed measurement. Output Voltage VO BHYS VOL B Fig. 4–33: Definition of magnetic switching points for the HAL 509 Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. 23.1 23.1 21.7 21.3 On point BON Typ. 27.4 26.8 25.7 25.4 Max. 31.1 30.4 29.2 28.9 Off point BOFF Min. 19.9 19.9 18.6 18.3 Typ. 23.8 23.2 22.4 22.1 Max. 27.2 26.6 25.6 25.3 Hysteresis BHYS Min. 2.9 2.8 2.6 2.5 Typ. 3.6 3.5 3.3 3.3 Max. 3.9 3.9 3.8 3.8 Magnetic Offset Min. − 21.5 − − Typ. 25.6 25 24 23.7 Max. − 28.5 − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 38 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 509 mT 35 HAL 509 mT 35 BONmax HAL 509 BON 30 BOFF 25 BON BON 30 BOFF BOFFmax 25 BONtyp BOFFtyp 20 BOFF 20 BONmin BOFFmin 15 TA = −40 °C 10 TA = 25 °C TA = 100 °C 5 TA = 170 °C 15 VDD = 3.8 V VDD = 4.5 ... 24 V 5 10 0 0 5 10 15 20 25 VDD 30 V 0 −50 0 50 100 150 TA, TJ 200 °C Fig. 4–34: Typ. magnetic switching points versus supply voltage Fig. 4–36: Magnetic switching points versus temperature mT 35 HAL 509 Note: In the diagram “Magnetic switching points versus temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 30 BOFF 25 BON 20 BOFF 15 TA = −40 °C 10 TA = 25 °C TA = 100 °C 5 TA = 170 °C 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–35: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 39 HAL 516 4.10. HAL 516 The HAL 516 is the most sensitive unipolar switching sensor with an inverted output of this family (see Fig. 4–37). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 5xx family, the HAL 506 is a sensor with the same magnetic characteristics but with a normal output characteristic. Applications DATA SHEET The HAL 516 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: – applications with large air gap or weak magnets, – solid state switches, – contactless solution to replace microswitches, – position and end-point detection, and – rotating speed measurement. Output Voltage VO BHYS Magnetic Features: – switching type: unipolar inverted – high sensitivity – typical BON: 3.5 mT at room temperature – typical BOFF: 5.5 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1000 ppm/K the HAL 516 VOL 0 BON BOFF B Fig. 4–37: Definition of magnetic switching points for Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. 2.1 2 1.8 1.7 On point BON Typ. 3.8 3.5 3.1 3 Max. 5.4 5 5.1 5.2 Off point BOFF Min. 4.3 3.8 3.4 3.2 Typ. 5.9 5.5 4.8 4.6 Max. 7.7 7.2 6.9 6.8 Hysteresis BHYS Min. 1.6 1.5 1 0.9 Typ. 2.1 2 1.7 1.6 Max. 2.8 2.7 2.6 2.6 Magnetic Offset Min. − 3.8 − − Typ. 4.8 4.5 4 3.8 Max. − 6.2 − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 40 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 516 mT 8 7 6 HAL 516 mT 8 BOFFmax 7 6 HAL 516 BON BOFF BON BOFF BOFF 5 4 BON 3 TA = −40 °C 2 1 0 TA = 25 °C TA = 100 °C TA = 170 °C 0 5 10 15 20 25 VDD 30 V 5 BONmax 4 3 2 1 0 −50 BONmin VDD = 3.8 V VDD = 4.5 ... 24 V 0 50 100 150 TA, TJ BOFFmin BOFFtyp BONtyp 200 °C Fig. 4–38: Typ. magnetic switching points versus supply voltage Fig. 4–40: Magnetic switching points versus temperature mT 8 7 HAL 516 Note: In the diagram “Magnetic switching points versus temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF BON 6 5 4 3 TA = −40 °C 2 1 0 3.0 TA = 25 °C TA = 100 °C TA = 170 °C BOFF 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–39: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 41 HAL 519 4.11. HAL 519 The HAL 519 is a very sensitive unipolar switching sensor with an inverted output sensitive only to the magnetic north polarity (see Fig. 4–41). The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side, the output remains low. For correct functioning in the application, the sensor requires only the magnetic north pole on the branded side of the package. Applications DATA SHEET The HAL 519 is the optimal sensor for all applications with the north magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: – solid-state switches, – contactless solution to replace microswitches, – position and end-point detection, and – rotating speed measurement. Magnetic Features: – switching type: unipolar inverted, north sensitive – high sensitivity – typical BON: −3.5 mT at room temperature – typical BOFF: −5.5 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1000 ppm/K BOFF VO BHYS Output Voltage VOL BON 0B Fig. 4–41: Definition of magnetic switching points for the HAL 519 Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. -5.4 -5 -5.1 -5.2 On point BON Typ. -3.8 -3.6 -3.1 -3 Max. -2.1 -2 -1.7 -1.5 Off point BOFF Min. -7.7 -7.2 -6.8 -6.8 Typ. -5.9 -5.5 -4.8 -4.6 Max. -4.3 -3.8 -3.1 -2.8 Hysteresis BHYS Min. 1.6 1.5 1 0.9 Typ. 2.1 1.9 1.7 1.6 Max. 2.8 2.7 2.6 2.6 Magnetic Offset Min. − -6.2 − − Typ. -4.8 -4.5 -4 -3.8 Max. − -3.8 − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 42 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 519 mT 0 TA = −40 °C BON −1 BOFF −2 −3 TA = 25 °C TA = 100 °C TA = 170 °C HAL 519 mT 0 VDD = 3.8 V BON BOFF −1 −2 −3 VDD = 4.5 V ... 24 V BONmax HAL 519 BON −4 −5 −6 −7 −8 0 5 10 15 20 25 VDD 30 V −4 −5 BONtyp BOFFmax BONmin BOFF −6 B typ OFF −7 −8 −50 BOFFmin 0 50 100 150 TA, TJ 200 °C Fig. 4–42: Typ. magnetic switching points versus supply voltage Fig. 4–44: Magnetic switching points versus temperature mT 0 TA = −40 °C BON BOFF −1 −2 −3 −4 −5 −6 −7 −8 3.0 TA = 25 °C TA = 100 °C TA = 170 °C HAL 519 Note: In the diagram “Magnetic switching points versus temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–43: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 43 HAL 523 4.12. HAL 523 The HAL 523 is the least sensitive unipolar switching sensor of this family (see Fig. 4–45). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Applications DATA SHEET The HAL 523 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: – solid-state switches, – contactless solution to replace microswitches, – position and end-point detection, and – rotating speed measurement. Output Voltage VO Magnetic Features: – switching type: unipolar, – low sensitivity – typical BON: 34.5 mT at room temperature – typical BOFF: 24 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BOFF BHYS VOL BON B Fig. 4–45: Definition of magnetic switching points for the HAL 523 Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 140 °C 170 °C Min. 28 28 28 28 On point BON Typ. 34.5 34.5 34.5 34.5 Max. 42 42 42 42 Off point BOFF Min. 18 18 18 18 Typ. 24 24 24 24 Max. 30 30 30 30 Hysteresis BHYS Min. 7 7 7 7 Typ. 10.5 10.5 10.5 10.5 Max. 14 14 14 14 Magnetic Offset Min. − − − − Typ. 29.3 29.3 29.3 29.3 Max. − − − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 44 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 523 mT 45 40 HAL 523 mT 45 40 35 30 HAL 523 BONmax BON BOFF BON 35 30 25 20 15 10 5 0 0 TA = −40 °C TA = 25 °C TA = 100 °C TA = 170 °C BOFF BON BOFF BONtyp BOFFmax BONmin BOFFtyp 25 20 15 10 5 BOFFmin VDD = 3.8 V VDD = 4.5 ... 24 V 5 10 15 20 25 VDD 30 V 0 −50 0 50 100 150 TA, TJ 200 °C Fig. 4–46: Typ. magnetic switching points versus supply voltage Fig. 4–48: Magnetic switching points versus temperature mT 45 40 35 30 25 20 15 10 5 0 3.0 HAL 523 Note: In the diagram “Magnetic switching points versus temperature” the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF BON BOFF TA = −40 °C TA = 25 °C TA = 100 °C TA = 170 °C 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4–47: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 45 HAL 5xy 5. Application Notes 5.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = TA + Δ T DATA SHEET 5.3. Start-Up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 15). During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. In case of sensors with an inverted switching behavior (HAL 516 ... HAL 519), the output state will be high if B > BOFF and low if B < BON. Note: For magnetic fields between BOFF and BON, the output state of the HAL sensor will be either low or high after applying VDD. In order to achieve a defined output state, the applied magnetic field must be above BON, respectively, below BOFF. Under static conditions and continuous operation, the following equation applies: Δ T = IDD × VDD × R th For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: T Amax = T Jmax – Δ T 5.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards ISO 7637. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. 5.2. Extended Operating Conditions All sensors fulfil the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 14). Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. RV 220 Ω 1 VEMC VP 4.7 nF VDD OUT 3 20 pF 2 GND RL 1.2 kΩ Note: The functionality of the sensor below 3.8 V is not tested on a regular base. For special test conditions, please contact Micronas. Fig. 5–1: Test circuit for EMC investigations 46 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy LQWHQWLRQDOO\ OHIW YDFDQW Micronas Jan. 11. 2010; DSH000020_004EN 47 HAL 5xy 6. Data Sheet History 1. Final data sheet: “HAL 501...506, 508, 509, 516... 518, Hall Effect Sensor Family, Aug. 11, 1999, 6251485-1DS. First release of the final data sheet.Major changes to the previous edition “HAL501 ... HAL506, HAL 508", Hall Effect Sensor ICs, May 5, 1997, 6251-405-1DS: – additional types: HAL509, HAL516 ... HAL518 – additional package SOT-89B – additional temperature range “K” – outline dimensions for SOT-89A and TO-92UA changed – absolute maximum ratings changed – electrical characteristics changed – magnetic characteristics for HAL 501, HAL 503,HAL 506, and HAL 509 changed 2. Final data sheet: “HAL 501...506, 508, 509, 516... 519, 523, Hall Effect Sensor Family”, Feb. 14, 2001, 6251-485-2DS. Second release of the final data sheet. Major changes: – additional types: HAL519, HAL523 – phased-out package SOT-89A removed – temperature range “C” removed – outline dimensions for SOT-89B: reduced tolerances 3. Final data sheet: “HAL 501...506, 508, 509, 516... 519, 523, Hall Effect Sensor Family”, Oct. 7, 2002, 6251-485-3DS. Third release of the final data sheet. Major changes: – temperature range “E” removed – outline dimensions for TO-92UA: package diagram updated – absolute maximum ratings changed – section 3.4.1. added – electrical characteristics changed – magnetic characteristics changed DATA SHEET 4. Final data sheet: “HAL 5xy Hall-Effect Sensor Family”, Nov. 27, 2003, 6251-485-4DS (DSH000020_001EN) . Fourth release of the data sheet . Major changes: – new package diagrams for SOT89-1 and TO92UA-1 – package diagram for TO92UA-2 added – ammopack diagrams for TO92UA-1/-2 added 5. Final data sheet : “HAL 5xy Hall-Effect Sensor Family”, Dec. 4, 2008, DSH000020_002EN. Fifth release of the data sheet . Major changes: – Section 1.6. on page 6 “Solderability and Welding” updated – figures “Definition of magnetic switching points” updated for HAL508, HAL516 and HAL519 – recommended footprint SOT89-B1 added – all package diagrams updated. 6. Final data sheet : “HAL 5xy Hall-Effect Sensor Family”, Feb. 12, 2009, DSH000020_003EN. Sixth release of the data sheet . Minor changes: – Section 3.3. “Positions of Sensitive Areas” updated (parameter A4 for SOT89-B1 was added). 7. Final data sheet : “HAL 5xy Hall-Effect Sensor Family”, Jan. 11. 2010, DSH000020_004EN. Seventh release of the data sheet. Major changes: – HAL 507 added – TO92UA outline dimensions updated Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com 48 Jan. 11. 2010; DSH000020_004EN Micronas