HAL526

Hardware Documentation Data Sheet HAL 525, HAL 526 Hall-Effect Switches ® Edition Nov. 30, 2009 DSH000144_003EN HAL 525, HAL 526 Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks – HAL DATA SHEET Micronas Patents# Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 Nov. 30, 2009; DSH000144_003EN Micronas DATA SHEET HAL 525, HAL 526 Contents Page 4 4 4 4 4 5 5 5 6 7 7 12 12 12 12 13 14 15 19 19 21 23 23 23 23 23 24 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 5. 5.1. 5.2. 5.3. 5.4. 6. Title Introduction Features Switch Type Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability and Welding Pin Connections Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Overview Type Description < HAL 525 HAL 526 Application Notes Ambient Temperature Extended Operating Conditions Start-Up Behavior EMC and ESD Data Sheet History Micronas Nov. 30, 2009; DSH000144_003EN 3 HAL 525, HAL 526 Hall-Effect Switches Release Note: Revision bars indicate significant changes to the previous edition. 1.2. Switch Type Type Switching Behavior latching latching DATA SHEET Typical Temperature Coefficient −2000 ppm/K −2000 ppm/K see Page 19 21 1. Introduction < 525 526 < The Hall switches HAL 525 and HAL 526 are produced in CMOS technology. These sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. In addition, the magnetic characteristics are constant in the full supply voltage and temperature range. This sensor is designed for industrial and automotive applications and operates with supply voltages from 3.8 V to 24 V in the ambient temperature range from −40 °C up to 125 °C. Note: < : HAL 525 is not available for new designs. Please use HAL 526 instead. Latching Sensor: Latching sensors require a magnetic north and south pole for correct functioning. The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. < The HAL 525 and HAL 526 are available in the SMD package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2. 1.1. Features – operates from 3.8 V to 24 V supply voltage – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – overvoltage protection at all pins – reverse-voltage protection at VDD-pin – magnetic characteristics are robust against mechanical stress effects – short-circuit protected open-drain output by thermal shut down – constant switching points over a wide supply voltage range – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics – ideal sensor for window lifter, ignition timing, and revolution counting in extreme automotive and industrial environments – EMC corresponding to ISO 7637 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type K Temperature Range E − 526E < HAL 525 HAL 526 525K 526K 1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = −40 °C to +140 °C E: TJ = −40 °C to +100 °C The relationship between ambient temperature (TA) and junction temperature is explained in Section 5.1. on page 23. 4 Nov. 30, 2009; DSH000144_003EN Micronas DATA SHEET HAL 525, HAL 526 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-1 UA for TO92UA Type: 526 Example: HAL526UA-E → Type: 526 → Package: TO92UA → Temperature Range: TJ = −40 °C to +100 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. 1.6. Solderability and Welding During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.7. Pin Connections 1 VDD 3 OUT 2 GND Fig. 1–1: Pin configuration Micronas Nov. 30, 2009; DSH000144_003EN 5 HAL 525, HAL 526 2. Functional Description The Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-pin and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to −15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to −15 V. 1 VDD Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hysteresis Control DATA SHEET Short Circuit and Overvoltage Protection Hall Plate Comparator 3 Switch Output OUT Clock 2 GND Fig. 2–1: HAL 525 and HAL 526 block diagram fosc t B BON t VOUT VOH VOL t IDD 1/fosc = 9 μs tf t Fig. 2–2: Timing diagram of HAL 526 6 Nov. 30, 2009; DSH000144_003EN Micronas DATA SHEET HAL 525, HAL 526 3. Specifications 3.1. Outline Dimensions Fig. 3–1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Ordering code: SF Weight approximately 0.034 g Micronas Nov. 30, 2009; DSH000144_003EN 7 HAL 525, HAL 526 DATA SHEET Fig. 3–2: TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread Weight approximately 0.106 g 8 Nov. 30, 2009; DSH000144_003EN Micronas DATA SHEET HAL 525, HAL 526 Fig. 3–3: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.106 g Micronas Nov. 30, 2009; DSH000144_003EN 9 HAL 525, HAL 526 DATA SHEET Fig. 3–4: TO92-2: Dimensions ammopack inline, not spread 10 Nov. 30, 2009; DSH000144_003EN Micronas DATA SHEET HAL 525, HAL 526 Fig. 3–5: TO92UA-1: Dimensions ammopack inline, spread Micronas Nov. 30, 2009; DSH000144_003EN 11 HAL 525, HAL 526 3.2. Dimensions of Sensitive Area 0.25 mm × 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-1 y A4 D1 H1 0.95 mm nominal 0.3 mm nominal see drawing Not applicable TO92UA-1/-2 1.0 mm nominal 0.3 mm nominal 3.05 mm ± 0.05 mm min. 21 mm max. 23.1 mm DATA SHEET 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol VDD VO IO TJ 1) 2) Parameter Supply Voltage Output Voltage Continuous Output On Current Junction Temperature Range Pin No. 1 3 3 Min. −15 −0.3 − −40 −40 Max. 281) 281) 501) 150 1702) Unit V V mA °C as long as TJmax is not exceeded t < 1000h 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 12 Nov. 30, 2009; DSH000144_003EN Micronas DATA SHEET HAL 525, HAL 526 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol VDD IO VO Parameter Supply Voltage Continuous Output On Current Output Voltage (output switched off) Pin No. 1 3 3 Min. 3.8 0 0 Max. 24 20 24 Unit V mA V Micronas Nov. 30, 2009; DSH000144_003EN 13 HAL 525, HAL 526 3.6. Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 12 V. Symbol IDD VDDZ VOZ VOL VOL IOH IOH fosc Parameter Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Output Voltage Output Voltage over Temperature Range Output Leakage Current Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time Output Fall Time Pin No. 1 1 3 3 3 3 3 − Min. 1.6 − − − − − − 73 100 − Typ. 3 28.5 28 130 130 0.06 − 115 150 30 Max. 5.2 32 32 280 400 0.1 10 − − 70 Unit mA V V mV mV μA μA kHz kHz μs Test Conditions DATA SHEET IDD = 25 mA, TJ = 25 °C, t = 20 ms IOH = 25 mA, TJ = 25 °C, t = 20 ms IOL = 20 mA, TJ = 25 °C IOL = 20 mA Output switched off, TJ = 25 °C, VOH = 3.8 to 24 V Output switched off, TJ ≤150 °C, VOH = 3.8 to 24V HAL 525 HAL 526 VDD = 12 V B > BON + 2 mT or B < BOFF − 2 mT VDD = 12 V, RL = 820 Ω, CL = 20 pF ten(O) 1 tr tf 3 3 − − 75 50 400 400 ns ns SOT89B Package Thermal Resistance Rthja Rthjc Rthjs Junction to Ambient Junction to Case Junction to Solder Point − − − − − − − − − 2091) 561) 822) K/W K/W K/W 30 mm x 10 mm x 1.5 mm, pad size (see Fig. 3–6) TO92UA Package Thermal Resistance Rthja Rthjc Rthjs 1) Measured 2) Junction to Ambient Junction to Case Junction to Solder Point − − − − − − − − − 2461) 70 1) K/W K/W K/W 1272) with a 1s0p board Measured with a 1s1p board 14 Nov. 30, 2009; DSH000144_003EN Micronas DATA SHEET HAL 525, HAL 526 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3–6: Recommended pad size SOT89B-1 Dimensions in mm 3.7. Magnetic Characteristics Overview at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V Typical Characteristics for TJ = 25 °C and VDD = 12 V. Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Switching Type HAL 525 latching Parameter TJ −40 °C 25 °C 140 °C HAL 526 latching −40 °C 25 °C 140 °C Min. 11.8 11 6.5 11.8 11 6.5 On point BON Typ. 15.8 14 10 15.8 14 10 Max. 19.2 17 14 19.2 17 14 Min. −19.2 −17 −14 −19.2 −17 −14 Off point BOFF Typ. −15.8 −14 −10 −15.8 −14 −10 Max. −11.8 −11 −6.5 −11.8 −11 −6.5 Min. 27.4 24 16 27.4 24 16 Hysteresis BHYS Typ. 31.6 28 20 31.6 28 20 Max. 35.8 32 26 35.8 32 26 mT mT mT mT mT mT Unit Note: For detailed descriptions of the individual types, see pages 19 and following. Micronas Nov. 30, 2009; DSH000144_003EN 15 HAL 525, HAL 526 DATA SHEET mA 25 20 IDD 15 10 5 0 –5 TA = –40 °C TA = 25 °C TA = 170 °C HAL 52x mA 5 HAL 52x IDD 4 3 2 VDD = 3.8 V VDD = 12 V 1 VDD = 24 V –10 –15 –15–10 –5 0 0 –50 5 10 15 20 25 30 35 V VDD 0 50 100 150 TA 200 °C Fig. 3–7: Typical supply current versus supply voltage Fig. 3–9: Typical supply current versus ambient temperature mA 5.0 4.5 IDD 4.0 3.5 HAL 52x kHz 200 180 HAL 52x TA = –40 °C TA = 25 °C fosc 160 140 120 VDD = 3.8 V VDD = 4.5 V...24 V 3.0 2.5 2.0 1.5 1.0 0.5 0 TA = 100 °C TA = 170 °C 100 80 60 40 20 1 2 3 4 5 6 VDD 7 8V 0 –50 0 50 100 150 TA 200 °C Fig. 3–8: Typical supply current versus supply voltage Fig. 3–10: Typ. internal chopper frequency versus ambient temperature 16 Nov. 30, 2009; DSH000144_003EN Micronas DATA SHEET HAL 525, HAL 526 mV 400 350 VOL 300 TA = 170 °C 250 200 150 100 50 0 TA = 100 °C HAL 52x IO = 20 mA mV 400 HAL 52x IO = 20 mA VDD = 3.8 V VOL 300 VDD = 4.5 V VDD = 24 V 200 TA = 25 °C TA = –40 °C 100 0 5 10 15 20 25 VDD 30 V 0 –50 0 50 100 150 TA 200 °C Fig. 3–11: Typical output low voltage versus supply voltage Fig. 3–13: Typical output low voltage versus ambient temperature mV 600 HAL 52x IO = 20 mA μA 104 103 HAL 52x VOL 500 IOH 102 101 TA = 170 °C TA = 150 °C 400 100 300 10–1 10–2 200 TA =100 °C TA = 25 °C 100 TA = –40 °C 10–3 10–4 10–5 0 3 4 5 6 VDD 7V 10–6 15 TA = 100 °C TA = 170 °C TA = 25 °C TA = –40 °C 20 25 30 VOH 35 V Fig. 3–12: Typical output low voltage versus supply voltage Fig. 3–14: Typ. output high current versus output voltage Micronas Nov. 30, 2009; DSH000144_003EN 17 HAL 525, HAL 526 DATA SHEET μA 102 HAL 52x dBμV 80 70 VDD 60 50 HAL 52x VP = 12 V TA = 25 °C Quasi-PeakMeasurement test circuit 101 IOH 100 10–1 40 10–2 VOH = 24 V 30 10–3 VOH = 3.8 V 20 10–4 10 0 0.01 max. spurious signals 10–5 –50 0 50 100 150 TA 200 °C 0.10 1.00 1 10.00 100.00 1000.00 10 100 1000 MHz f Fig. 3–15: Typical output leakage current versus ambient temperature Fig. 3–17: Typ. spectrum of supply voltage dBμA 30 HAL 52x VDD = 12 V TA = 25 °C Quasi-PeakMeasurement max. spurious signals IDD 20 10 0 –10 –20 –30 0.01 0.10 1.00 1 10.00 100.00 1000.00 10 100 1000 MHz f Fig. 3–16: Typ. spectrum of supply current 18 Nov. 30, 2009; DSH000144_003EN Micronas DATA SHEET HAL 525, HAL 526 Applications 4. Type Description 4.1. HAL 525 < < The HAL 525 is an optimal sensor for applications with alternating magnetic signals such as: – multipole magnet applications, – rotating speed measurement, < The HAL 525 is a latching sensor (see Fig. 4–1). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. – commutation of brushless DC motors, and – window lifter. Output Voltage VO BHYS Magnetic Features: – switching type: latching – low sensitivity – typical BON: 14 mT at room temperature – typical BOFF: −14 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −2000 ppm/K Note: BOFF 0 BON VOL B Fig. 4–1: Definition of magnetic switching points for < the HAL 525 < :HAL 525 is not available for new designs. Please use HAL 526 instead. Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 11.8 11 8 6.5 On point BON Typ. 15.8 14 11 10 Max. 19.2 17 15.5 14 Off point BOFF Min. −19.2 −17 −15.5 −14 Typ. −15.8 −14 −11 −10 Max. −11.8 −11 −8 −6.5 Hysteresis BHYS Min. 27.4 24 18.5 16 Typ. 31.6 28 22 20 Max. 35.8 32 28.7 26 −2 Magnetic Offset Min. Typ. 0 0 0 0 2 Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Nov. 30, 2009; DSH000144_003EN 19 HAL 525, HAL 526 DATA SHEET mT 20 15 10 5 0 –5 –10 –15 –20 HAL 525 BON mT 20 BONmax BON BOFF 15 10 5 0 –5 –10 –15 BOFFmin –20 –50 BONmin VDD = 3.8 V VDD = 4.5 V...24 V BOFFmax HAL 525 BON BOFF BONtyp TA = –40 °C TA = 25 °C TA = 100 °C TA = 170 °C BOFF BOFFtyp 0 5 10 15 20 25 VDD 30 V 0 50 100 150 TA, TJ 200 °C Fig. 4–2: Typ. magnetic switching points versus supply voltage Fig. 4–4: Magnetic switching points versus temperature mT 20 15 10 5 0 –5 –10 –15 –20 HAL 525 BON Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF TA = –40 °C TA = 25 °C TA = 100 °C TA = 170 °C BOFF 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4–3: Typ. magnetic switching points versus supply voltage 20 Nov. 30, 2009; DSH000144_003EN Micronas DATA SHEET HAL 525, HAL 526 Applications The HAL 526 is an optimal sensor for applications with alternating magnetic signals such as: – multipole magnet applications, – rotating speed measurement, – commutation of brushless DC motors, and – window lifter. 4.2. HAL 526 The HAL 526 is a latching sensor (see Fig. 4–5). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Output Voltage VO BHYS Magnetic Features: – switching type: latching – low sensitivity – typical BON: 14 mT at room temperature – typical BOFF: −14 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −2000 ppm/K BOFF 0 VOL BON B Fig. 4–5: Definition of magnetic switching points for the HAL 526 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 11.8 11 8 6.5 On point BON Typ. 15.8 14 11 10 Max. 19.2 17 15.5 14 Off point BOFF Min. −19.2 −17 −15.5 −14 Typ. −15.8 −14 −11 −10 Max. −11.8 −11 −8 −6.5 Hysteresis BHYS Min. 27.4 24 18.5 16 Typ. 31.6 28 22 20 Max. 35.8 32 28.7 26 −2 Magnetic Offset Min. Typ. 0 0 0 0 2 Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Nov. 30, 2009; DSH000144_003EN 21 HAL 525, HAL 526 DATA SHEET mT 20 15 10 5 0 –5 –10 –15 –20 HAL 525 BON mT 20 BONmax BON BOFF 15 10 5 0 –5 –10 –15 BOFFmin –20 –50 BONmin VDD = 3.8 V VDD = 4.5 V...24 V BOFFmax HAL 525 BON BOFF BONtyp TA = –40 °C TA = 25 °C TA = 100 °C TA = 170 °C BOFF BOFFtyp 0 5 10 15 20 25 VDD 30 V 0 50 100 150 TA, TJ 200 °C Fig. 4–6: Typ. magnetic switching points versus supply voltage Fig. 4–8: Magnetic switching points versus temperature mT 20 15 10 5 0 –5 –10 –15 –20 HAL 525 BON Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF TA = –40 °C TA = 25 °C TA = 100 °C TA = 170 °C BOFF 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4–7: Typ. magnetic switching points versus supply voltage 22 Nov. 30, 2009; DSH000144_003EN Micronas DATA SHEET HAL 525, HAL 526 5.3. Start-Up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Characteristics (see page 14). During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. 5.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards ISO 7637. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. 5. Application Notes 5.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = TA + Δ T At static conditions and continuous operation, the following equation applies: Δ T = IDD × VDD × R th If IOUT > IDD, please contact Micronas application support for detailed instructions on calculating ambienttemperature. For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: T Amax = T Jmax – Δ T RV 220 Ω 1 VDD OUT 3 4.7 nF 20 pF 2 GND RL 1.2 kΩ 5.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 13). Supply Voltage Below 3.8 V VEMC VP Fig. 5–1: Test circuit for EMC investigations Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V is not tested. For special test conditions, please contact Micronas. Micronas Nov. 30, 2009; DSH000144_003EN 23 HAL 525, HAL 526 6. Data Sheet History 1. Final data sheet: “HAL 525 Hall Effect Sensor IC”, April 23, 1997, 6251-465-1DS. First release of the final data sheet. 2. Final data sheet: “HAL 525 Hall Effect Sensor IC”, March 10, 1999, 6251-465-2DS. Second release of the final data sheet. Major changes: – additional package SOT-89B – outline dimensions for SOT-89A and TO-92UA changed – electrical characteristics changed – section 4.2.: Extended Operating Conditions added – section 4.3.: Start-up Behavior added 3. Final data sheet: “HAL 525, HAL 535 Hall Effect Sensor Family”, Aug. 30, 2000, 6251-465-3DS. Third release of the final data sheet. Major changes: – new sensor HAL 535 added – outline dimensions for SOT-89B: reduced tolerances – SMD package SOT-89A removed – temperature range “C” removed 4. Data Sheet: “HAL 525, HAL 535 Hall Effect Sensor Family”, Aug. 8, 2002, 6251-465-4DS. Fourth release of the data sheet. Major changes: – outline dimensions for TO-92UA changed – temperature range “A” removed 5. Data Sheet: “HAL 525, HAL 526, HAL 535 Hall Effect Sensor Family”, Oct. 22, 2002, 6251-4655DS. Fifth release of the data sheet. Major changes: – new sensor HAL 526 added 6. Data Sheet: “HAL 526, HAL 535 Hall Effect Sensor Family”, March 31, 2004, 6251-465-6DS. Sixth release of the data sheet. Major changes: – specification for HAL525 removed – new package diagrams for SOT89B-1 and TO92UA-1 – package diagram for TO92UA-2 added – ammopack diagrams for TO92UA-1/-2 added DATA SHEET 7. Data Sheet: “HAL 526 Hall-Effect Switch”, Nov. 8, 2007, DSH000144_001EN. Seventh release of the data sheet. Major changes: – specification for HAL 535 removed – package diagrams for SOT89B-1, TO92UA-1, and TO92UA-2 updated – ammopack diagrams for TO92UA-1/-2 updated 8. Data Sheet: “HAL 526 Hall-Effect Switches”, Feb. 6, 2009, DSH000144_002EN. Eighth release of the data sheet. Major changes: – Section 1.6. “Solderability and Welding” updated 9. Data Sheet: “HAL 525, HAL 526 Hall-Effect Switches”, Nov. 30, 2009, DSH000144_003EN. Ninth release of the data sheet. Major changes: – HAL 525 added Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com 24 Nov. 30, 2009; DSH000144_003EN Micronas