HAL548SF-E

Hardware Documentation Data Sheet HAL 54x Hall-Effect Sensor Family ® Edition Feb. 12, 2009 DSH000023_003EN HAL54x Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks – HAL DATA SHEET Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL54x Contents, continued Page 4 4 4 5 5 5 5 5 6 7 7 12 12 12 12 13 14 15 19 19 21 23 25 27 27 27 27 27 28 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 4.3. 4.4. 5. 5.1. 5.2. 5.3. 5.4. 6. Title Introduction Features Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability and Welding Pin Connections Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Overview Type Description HAL542 HAL543 HAL546 HAL548 Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC and ESD Data Sheet History Micronas Feb. 12, 2009; 000023_003ENDS 3 HAL54x Hall-Effect Sensor Family Release Note: Revision bars indicate significant changes to the previous edition. DATA SHEET – ideal sensor for applications in extreme automotive and industrial environments – EMC corresponding to ISO 7637 1. Introduction The HAL54x family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. In addition to the HAL50x/51x family, the HAL54x features a power-on and undervoltage reset. The sensors of this family differ in the switching behavior and the switching points. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 4.3 V to 24 V in the ambient temperature range from −40°C up to 150°C. All sensors are available in the SMD-package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2. 1.2. Family Overview The types differ according to the magnetic flux density values for the magnetic switching points and the temperature behavior of the magnetic switching points. Type 542 543 546 548 Switching Behavior latching unipolar unipolar unipolar Sensitivity high low high medium see Page 19 21 23 25 Latching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. Unipolar Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. 1.1. Features – switching offset compensation at typically 62 kHz – operates from 4.3 V to 24 V supply voltage – overvoltage protection at all pins – reverse-voltage protection at VDD-pin – magnetic characteristics are robust against mechanical stress effects – short-circuit protected open-drain output by thermal shut down – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – constant switching points over a wide supply voltage range – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics 4 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL54x 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-1 UA for TO92UA 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type K HAL542 HAL543 HAL546 HAL548 542K 543K 546K 548K Temperature Range E Type: 54x Example: HAL542UA-K 542E 543E 546E 548E → Type: 542 → Package: TO92UA → Temperature Range: TJ = −40 °C to +140 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = −40 °C to +140 °C E: TJ = −40 °C to +100 °C Note: Due to power dissipation, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 5.1. on page 27 for details. 1.6. Solderability and Welding Soldering During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.7. Pin Connections 1 VDD 3 OUT 2, 4 GND Fig. 1–1: Pin configuration Micronas Feb. 12, 2009; DSH000023_003EN 5 HAL54x 2. Functional Description The Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-pin and VDD pin together with external series resistors. Reverse current is limited at the VDD pin by an internal series resistor up to −15 V. No external reverse protection diode is needed at the VDD pin for reverse voltages ranging from 0 V to −15 V. A built-in reset-circuit clamps the output to the “high” state (reset state) during power-on or when the supply voltage drops below a reset voltage of Vreset < 4.3 V. For supply voltages between Vreset and 4.3 V, the output state of the device responds to the magnetic field. For supply voltages above 4.3 V, the device works according to the specified characteristics. VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias DATA SHEET HAL54x Hysteresis Control Power-on & Undervoltage Reset Short Circuit & Overvoltage Protection Hall Plate Switch Comparator Output OUT 3 Clock GND 2 Fig. 2–1: HAL54x block diagram fosc t B BON t VOUT VOH VOL t IDD 1/fosc = 9 μs tf t Fig. 2–2: Timing diagram 6 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL54x 3. Specifications 3.1. Outline Dimensions Fig. 3–1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Ordering code: SF Weight approximately 0.034 g Micronas Feb. 12, 2009; DSH000023_003EN 7 HAL54x DATA SHEET Fig. 3–2: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.106 g 8 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL54x Fig. 3–3: TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread Weight approximately 0.106 g Micronas Feb. 12, 2009; DSH000023_003EN 9 HAL54x DATA SHEET Fig. 3–4: TO92UA-1: Dimensions ammopack inline, spread 10 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL54x Fig. 3–5: TO92UA-2: Dimensions ammopack inline, not spread Micronas Feb. 12, 2009; DSH000023_003EN 11 HAL54x 3.2. Dimensions of Sensitive Area 0.25 mm × 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-1 y A4 0.95 mm nominal 0.3 mm nominal TO92UA-1/-2 1.0 mm nominal DATA SHEET 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol VDD VO IO TJ 1) Parameter Supply Voltage Output Voltage Continuous Output On Current Junction Temperature Range Pin No. 1 3 3 Min. −15 −0.3 − −40 Max. 281) 281) 501) 170 Unit V V mA °C as long as TJmax is not exceeded 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 12 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL54x 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol VDD IO VO Parameter Supply Voltage Continuous Output On Current Output Voltage (output switched off) Pin No. 1 3 3 Min. 4.3 0 0 Max. 24 20 24 Unit V mA V Micronas Feb. 12, 2009; DSH000023_003EN 13 HAL54x 3.6. Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, GND = 0 V, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 12 V. Symbol IDD IDD VDDZ VOZ VOL VOL IOH IOH fosc Vreset ten(O) tr tf RthJSB case SOT89B-1 RthJA case TO92UA-1, TO92UA-2 1) DATA SHEET Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Output Voltage Output Voltage over Temperature Range Output Leakage Current Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency Reset Voltage Enable Time of Output after Setting of VDD Output Rise Time Output Fall Time Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Soldering Point Pin No. 1 1 1 3 3 3 3 3 − 1 1 3 3 − Min. 2.3 1.6 − − − − − − − − − − − − Typ. 3 3 28.5 28 130 130 0.06 − 62 3.8 70 75 50 150 Max. 4.2 5.2 32 32 280 400 0.1 10 − − − 400 400 200 Unit mA mA V V mV mV μA μA kHz V μs ns ns K/W Conditions T J = 2 5 °C IDD = 25 mA, TJ = 25 °C, t = 20 ms IOH = 25 mA, TJ = 25 °C, t = 20 ms IOL = 20 mA, TJ = 25 °C IOL = 20 mA Output switched off, TJ = 25 °C, VOH = 4.3 to 24 V Output switched off, TJ ≤150 °C, VOH = 4.3 to 24V TJ = 25 °C, VDD = 4.5 to 24 V VDD = 12 V 1) VDD = 12 V, RL = 820 Ohm, CL = 20 pF Fiberglass Substrate 30 mm x 10 mm x 1.5 mm, for pad size see Fig. 3–6 − − 150 200 K/W B > BON + 2 mT or B < BOFF - 2 mT 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3–6: Recommended pad size SOT89B-1 Dimensions in mm 14 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL54x 3.7. Magnetic Characteristics Overview at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Switching Type HAL542 latching Parameter TJ −40 °C 25 °C 140 °C HAL543 unipolar −40 °C 25 °C 140 °C HAL546 unipolar −40 °C 25 °C 140 °C HAL548 unipolar −40 °C 25 °C 140 °C Min. 1 1 0.6 21 21 21 4.3 3.8 3.2 12 12 12 On point BON Typ. 2.8 2.6 2.4 27 27 27 5.9 5.5 4.8 19 18 17 Max. 5 4.5 4.6 33 33 33 7.7 7.2 6.9 24 24 24 Min. −5 −4.5 −4.6 15 15 15 2.1 2 1.8 6 6 6 Off point BOFF Typ. −2.8 −2.6 −2.4 21 21 21 3.8 3.5 3.1 13 12 11 Max. −1 −1 −0.6 27 27 27 5.5 5 5.5 18 18 18 Min. 4.5 4.5 3.3 4 4 4 1.5 1.4 1 4 4 4 Hysteresis BHYS Typ. 5.85 5.5 4.8 6 6 5.5 2.1 2 1.7 6 6 6 Max. 7.2 6.5 6.2 8 8 8 2.9 2.8 2.6 8 8 8 mT mT mT mT mT mT mT mT mT mT mT mT Unit Note: For detailed descriptions of the individual types, see pages 19 and following. Micronas Feb. 12, 2009; DSH000023_003EN 15 HAL54x DATA SHEET mA 25 20 IDD 15 10 5 0 –5 TA = –40 °C TA = 25 °C TA=140 °C HAL 54x mA 5 HAL 54x IDD 4 VDD = 24 V VDD = 12 V 3 2 VDD = 3.8 V 1 –10 –15 –15–10 –5 0 5 10 15 20 25 30 35 V VDD 0 –50 0 50 100 150 TA 200 °C Fig. 3–7: Typical supply current versus supply voltage Fig. 3–9: Typical supply current versus ambient temperature mA 5.0 4.5 IDD 4.0 3.5 HAL 54x kHz 100 90 HAL 54x TA = –40 °C TA = 25 °C fosc 80 70 60 VDD = 3.8 V 3.0 2.5 2.0 1.5 1.0 0.5 0 TA = 100 °C TA = 140 °C 50 40 30 20 10 0 –50 VDD = 4.5 V...24 V 1 2 3 4 5 6 VDD 7 8V 0 50 100 150 TA 200 °C Fig. 3–8: Typical supply current versus supply voltage Fig. 3–10: Typ. internal chopper frequency versus ambient temperature 16 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL54x kHz 100 90 HAL 54x mV 350 HAL 54x IO = 20 mA 300 fosc 80 70 TA = 25 °C 60 TA = –40 °C 50 40 30 20 50 10 0 0 TA = 140 °C 150 TA = 25 °C TA = –40 °C 200 TA = 100 °C VOL 250 100 0 5 10 15 20 25 VDD 30 V 0 5 10 15 20 25 VDD 30 V Fig. 3–11: Typ. internal chopper frequency versus supply voltage Fig. 3–13: Typical output low voltage versus supply voltage kHz 100 90 fosc 80 70 HAL 54x mV 400 HAL 54x IO = 20 mA VDD = 3.8 V VOL 300 VDD = 4.5 V TA = 25 °C VDD = 24 V TA = –40 °C TA = 140 °C 200 60 50 40 30 100 20 10 0 0 –50 200 °C 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V 0 50 100 150 TA Fig. 3–12: Typ. internal chopper frequency versus supply voltage Fig. 3–14: Typical output low voltage versus ambient temperature Micronas Feb. 12, 2009; DSH000023_003EN 17 HAL54x DATA SHEET μA 104 103 IOH 102 101 100 10–1 10–2 10–3 10–4 10–5 10–6 15 20 25 TA = 25 °C TA = 100 °C TA = 150 °C HAL 54x dBμA 30 HAL 54x VDD = 12 V TA = 25 °C Quasi-PeakMeasurement max. spurious signals IDD 20 10 0 –10 TA = –40 °C –20 30 VOH 35 V –30 0.01 0.10 1.00 1 10.00 100.00 1000.00 10 100 1000 MHz f Fig. 3–15: Typ. output high current versus output voltage Fig. 3–17: Typ. spectrum of supply current μA 102 HAL 54x dBμV 80 70 HAL 54x VP = 12 V TA = 25 °C Quasi-PeakMeasurement test circuit 2 101 IOH 100 VOH = 24 V VDD 60 50 10–1 VOH = 3.8 V 10–2 30 10–3 20 10–4 10 0 0.01 40 max. spurious signals 10–5 –50 0 50 100 150 TA 200 °C 0.10 1.00 1 10.00 100.00 1000.00 10 100 1000 MHz f Fig. 3–16: Typical output leakage current versus ambient temperature Fig. 3–18: Typ. spectrum of supply voltage 18 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL542 Applications The HAL542 is the optimal sensor for applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: – applications with large air gap or weak magnets, – rotating speed measurement, – commutation of brushless DC motors, and – CAM shaft sensors, and – magnetic encoders. 4. Type Description 4.1. HAL542 The HAL542 is the most sensitive latching sensor of this family (see Fig. 4–1). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Output Voltage VO BHYS Magnetic Features: – switching type: latching – high sensitivity – typical BON: 2.6 mT at room temperature – typical BOFF: −2.6 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1000 ppm/K BOFF 0 BON VOL B Fig. 4–1: Definition of magnetic switching points for the HAL542 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 1 1 0.95 0.6 On point BON Typ. 2.8 2.6 2.5 2.4 Max. 5 4.5 4.4 4.6 Off point BOFF Min. −5 −4.5 −4.4 −4.6 Typ. −2.8 −2.6 −2.5 −2.4 Max. −1 −1 −0.95 −0.6 Hysteresis BHYS Min. 4.5 4.5 3.7 3.3 Typ. 5.85 5.5 5.0 4.8 Max. 7.2 6.5 6.3 6.2 −1.5 Magnetic Offset Min. Typ. 0 0 0 0 1.5 Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Feb. 12, 2009; DSH000023_003EN 19 HAL542 DATA SHEET mT 6 HAL 542 mT 6 BONmax 4 HAL 542 BON BOFF 4 BON 2 TA = –40 °C 0 TA = 25 °C TA = 100 °C TA = 140 °C –2 BOFF –4 BON BOFF 2 BONmin 0 VDD = 3.8 V VDD = 4.3 V... 24 V BOFFmax –2 BONtyp BOFFtyp –4 BOFFmin –6 0 5 10 15 20 25 VDD 30 V –6 –50 0 50 100 150 TA, TJ 200 °C Fig. 4–2: Typ. magnetic switching points versus supply voltage Fig. 4–3: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 20 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL543 Applications The HAL543 is the optimal sensor for applications with unipolar magnetic signals and large magnetic amplitude at the sensor position such as: – position and end-point detection, – contactless solution to replace microswitches, – rotating speed measurement. 4.2. HAL543 The HAL543 is the most insensitive unipolar sensor of this family (see Fig. 4–4). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Magnetic Features: – switching type: unipolar – low sensitivity – typical BON: 27 mT at room temperature – typical BOFF: 21 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – points is −1000 ppm/K Output Voltage VO BHYS VOL 0 BOFF BON B Fig. 4–4: Definition of magnetic switching points for the HAL543 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 21 21 21 21 On point BON Typ. 27 27 27 27 Max. 33 33 33 33 Off point BOFF Min. 15 15 15 15 Typ. 21 21 21 21 Max. 27 27 27 27 Hysteresis BHYS Min. 4 4 4 4 Typ. 6 6 6 5.5 Max. 8 8 8 8 Magnetic Offset Min. − 18 − − Typ. 24 24 24 24 Max. − 30 − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Feb. 12, 2009; DSH000023_003EN 21 HAL543 DATA SHEET mT 30 28 BON BOFF 26 24 HAL 543 BON mT 40 HAL 543 BON BOFF 35 BONmax 30 22 20 BOFF 18 TA = –40 °C 16 14 12 10 10 –50 TA = 25 °C TA = 100 °C TA = 140 °C 15 BOFFmin 20 25 BONmin BOFFtyp BOFFmax BONtyp VDD = 4.3 V... 24 V 0 5 10 15 20 25 VDD 30 V 0 50 100 150 TA, TJ 200 °C Fig. 4–5: Typ. magnetic switching points versus supply voltage Fig. 4–6: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 22 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL546 Applications The HAL546 is the optimal sensor for applications with one magnetic polarity such as: – solid state switches, – contactless solution to replace micro-switches, and – rotating speed measurement. 4.3. HAL546 The HAL546 is a quite sensitive unipolar sensor (see Fig. 4–7). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Output Voltage Magnetic Features: – switching type: unipolar – high sensitivity – typical BON: 5.5 mT at room temperature – typical BOFF: 3.5 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1000 ppm/K. 0 BOFF BON VOL B VO BHYS Fig. 4–7: Definition of magnetic switching points for the HAL546 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 4.3 3.8 3.5 3.2 On point BON Typ. 5.9 5.5 5.3 4.8 Max. 7.7 7.2 7 6.9 Off point BOFF Min. 2.1 2 1.9 1.8 Typ. 3.8 3.5 3.3 3.1 Max. 5.5 5 5.4 5.5 Hysteresis BHYS Min. 1.5 1.4 1.1 1 Typ. 2.1 2 1.9 1.7 Max. 2.9 2.8 2.6 2.6 Magnetic Offset Min. − 2.9 − − Typ. 4.9 4.5 4.3 4 Max. − 6.1 − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Feb. 12, 2009; 000023_003EN 23 HAL546 DATA SHEET mT 8 7 6 5 4 3 2 1 0 HAL 546 mT 8 7 6 BONmax HAL 546 BON BOFF BON BOFF BON BOFFmax 5 BOFF 4 3 TA = –40 °C TA = 25 °C TA = 100 °C TA = 140 °C 0 5 10 15 20 25 VDD 30 V 0 –50 0 50 100 150 TA, TJ 200 °C 2 BOFFmin 1 BONmin BOFFtyp BONtyp VDD = 4.3 V... 24 V Fig. 4–8: Typ. magnetic switching points versus supply voltage Fig. 4–9: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 24 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL548 Applications The HAL548 is the ideal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position such as: – solid state switches, – contactless solution to replace micro switches, – position and end point detection, and – rotating speed measurement. 4.4. HAL548 The HAL548 is a unipolar switching sensor (see Fig. 4–10). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Magnetic Features: – switching type: unipolar, – medium sensitivity – typical BON: 18 mT at room temperature – typical BOFF: 12 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BOFF BON VOL B Output Voltage VO BHYS Fig. 4–10: Definition of magnetic switching points for the HAL548 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 12 12 12 12 On point BON Typ. 19 18 18 17 Max. 24 24 24 24 Off point BOFF Min. 6 6 6 6 Typ. 13 12 12 11 Max. 18 18 18 18 Hysteresis BHYS Min. 4 4 4 4 Typ. 6 6 6 6 Max. 8 8 8 8 Magnetic Offset Min. − 9 − − Typ. 16 15 15 14 Max. − 21 − − mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Feb. 12, 2009; DSH000023_003EN 25 HAL548 DATA SHEET mT 20 BON 18 BOFF 16 HAL 548 BON mT 30 HAL 548 BON BOFF 25 BONmax 20 14 12 10 8 6 4 TA = –40 °C TA = 25 °C TA = 100 °C TA = 140 °C 0 5 10 15 20 25 VDD 30 V 0 –50 0 50 100 150 TA, TJ 200 °C 5 BOFFmin 10 BOFF BOFFmax 15 BONtyp VDD = 4.3 V... 24 V BONmin BOFFtyp Fig. 4–11: Typ. magnetic switching points versus supply voltage Fig. 4–12: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 26 Feb. 12, 2009; DSH000023_003EN Micronas DATA SHEET HAL54x 5.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the characteristics table (see page 14). During the initialization time, the output state for the HAL54x is “Off-state” (i.e. Output High). After ten(O), the output will be high. The output will be switched to low if the applied magnetic field B is above BON. 5.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–1). The series resistor and the capacitor should be placed as closely as possible to the Hall sensor. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. 5. Application Notes 5.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = TA + Δ T At static conditions and continuous operation, the following equation applies: Δ T = IDD × VDD × R th For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. RV For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: T Amax = T Jmax – Δ T 220 Ω 1 VEMC VP 4.7 nF VDD OUT 3 20 pF 2 GND RL 1.2 kΩ 5.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 13). Supply Voltage Below 4.3 V The devices contain a Power-on Reset (POR) and an undervoltage reset. For VDD < Vreset the output state is high. For Vreset < VDD < 4.3 V the device responds to the magnetic field according to the specified magnetic characteristics. Fig. 5–1: Test circuit for EMC investigations Note: The functionality of the sensor below 4.3 V is not tested. For special test conditions, please contact Micronas. Micronas Feb. 12, 2009; DSH000023_003EN 27 HAL54x 6. Data Sheet History 1. Data sheet: “HAL54x Hall Effect Sensor Family”, Nov. 27, 2002, 6251-605-1DS. First release of the data sheet. 2. Data Sheet: “HAL54x Hall-Effect Sensor Family”, Sept. 13, 2004, DSH000023_001EN. Second release of the data sheet. Major changes: – new package diagrams for SOT89B-1 and TO92UA-1 – package diagram for TO92UA-2 added – ammopack diagrams for TO92UA-1/-2 added 3. Data Sheet: “HAL54x Hall-Effect Sensor Family”, Dec. 5, 2008, DSH000023_002EN. Third release of the data sheet. Major changes: – Section 1.6. on page 5 “Solderability and Welding” updated. – Fig. 3–6: Recommended footprint SOT89-B1 added – all package diagrams updated. 4. Data Sheet: “HAL54x Hall-Effect Sensor Family”, Feb. 12, 2009, DSH000023_003EN. Fourth release of the data sheet. Minor changes: – Section 3.3. “Positions of Sensitive Areas” updated (parameter A4 for SOT89-B1 was added). DATA SHEET Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com 28 Feb. 12, 2009; DSH000023_003EN Micronas