HAL581

Hardware Documentation D at a S h e e t HAL 573...HAL 576, 579 HAL 581...HAL 584 Two-Wire Hall-Effect Sensor Family ® Edition Dec. 22, 2008 DSH000145_003EN HAL57x, HAL58x Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks – HAL DATA SHEET Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL57x, HAL58x Contents Page 4 4 4 5 5 6 6 7 8 8 13 13 13 13 14 15 16 19 19 21 23 25 27 29 31 33 33 33 33 34 34 36 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 4.7. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 6. Title Introduction Features Family Overview Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability and Welding Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Overview Type Descriptions HAL573 HAL574 HAL575 HAL576 HAL579 HAL581 HAL584 Application Notes Application Circuit Extended Operating Conditions Start-Up Behavior Ambient Temperature EMC and ESD Data Sheet History Micronas Dec. 22, 2008; DSH000145_003EN 3 HAL57x, HAL58x Two-Wire Hall-Effect Sensor Family in CMOS technology Release Note: Revision bars indicate significant changes to the previous edition. DATA SHEET – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics – ideal sensor for applications in extreme automotive and industrial environments – EMC corresponding to ISO 7637 1. Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and a current source. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the current source is switched on (high current consumption) or off (low current consumption). The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.75 V to 24 V in the junction temperature range from −40 °C up to 140 °C. All sensors are available in the SMD package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2. 1.2. Family Overview Type 573 574 575 576 579 581 584 Switching Behavior unipolar unipolar latching unipolar latching unipolar inverted unipolar inverted Sensitivity low medium medium medium medium medium medium see Page 19 21 23 25 27 29 31 Unipolar Switching Sensors: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. 1.1. Features – current output for two-wire applications – low current consumption: 5 mA...6.9 mA – high current consumption: 12 mA...17 mA – junction temperature range from −40 °C up to 140 °C. – operates from 3.75 V to 24 V supply voltage – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – switching offset compensation at typically 145 kHz – overvoltage and reverse-voltage protection – magnetic characteristics are robust against mechanical stress effects – constant magnetic switching points over a wide supply voltage range Current consumption IDDhigh BHYS IDDlow 0 BOFF BON B Fig. 1–1: Unipolar Switching Sensor 4 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL57x, HAL58x 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Unipolar Inverted Switching Sensors: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Type Current consumption IDDhigh BHYS IDDlow 0 BON BOFF B HAL579 HAL581 HAL584 579K 581K 584K HAL573 HAL574 HAL575 HAL576 K 573K 574K 575K 576K Temperature Range E 573E 574E 575E 576E 579E 581E 584E Fig. 1–2: Unipolar Inverted Switching Sensor Latching Sensor: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. 1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = −40 °C to +140 °C E: TJ = −40 °C to +100 °C Current consumption IDDhigh BHYS IDDlow BOFF 0 BON B Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to Section 5.4. on page 34 for details. Fig. 1–3: Latching Sensor Micronas Dec. 22, 2008; DSH000145_003EN 5 HAL57x, HAL58x 1.5. Hall Sensor Package Codes DATA SHEET HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-1 UA for TO92UA Type: 57x or 58x Example: HAL581UA-E → Type: 581 → Package: TO92UA → Temperature Range: TJ = −40 °C to +100 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. 1.6. Solderability and Welding Solderability During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1 VDD x 2,4 GND x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 1–4: Pin configuration 6 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL57x, HAL58x 2. Functional Description HAL57x, HAL58x The HAL57x, HAL58x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperaturedependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. In the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the Hall sensor. In the high current consumption state, the current source is switched on and the current consumption is caused by the current through the Hall sensor and the current source. The built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. An internal oscillator provides a twophase clock. In each phase, the current is forced through the Hall plate in a different direction, and the Hall voltage is measured. At the end of the two phases, the Hall voltages are averaged and thereby the offset voltages are eliminated. The average value is compared with the fixed switching points. Subsequently, the current consumption switches to the corresponding state. The amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to −15 V. No external protection diode is needed for reverse voltages ranging from 0 V to −15 V. VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hysteresis Control Hall Plate Switch Comparator Current Source Clock GND 2, x x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 2–1: HAL57x, HAL58x block diagram fosc t B B OFF B ON t IDD IDDhigh IDDlow t IDD 1/fosc = 6.9 μs tf t Fig. 2–2: Timing diagram (example: HAL581) Micronas Dec. 22, 2008; DSH000145_003EN 7 HAL57x, HAL58x 3. Specifications 3.1. Outline Dimensions DATA SHEET Fig. 3–1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Weight approximately 0.034 g 8 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL57x, HAL58x Fig. 3–2: TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread Weight approximately 0.106 g Micronas Dec. 22, 2008; DSH000145_003EN 9 HAL57x, HAL58x DATA SHEET Fig. 3–3: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.106 g 10 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL57x, HAL58x Fig. 3–4: TO92UA-2: Dimensions ammopack inline, not spread Micronas Dec. 22, 2008; DSH000145_003EN 11 HAL57x, HAL58x DATA SHEET Fig. 3–5: TO92UA-1: Dimensions ammopack inline, spread 12 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL57x, HAL58x 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-1 y A4 0.85 mm nominal TO92UA-1/-2 0.9 mm nominal 0.3 mm nominal 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol VDD TJ 1) 2) Parameter Supply Voltage Junction Temperature Range Pin Name 1 Min. −151)2) −40 Max. 282) 170 Unit V °C −18 V with a 100 Ω series resistor at pin 1 (−16 V with a 30 Ω series resistor) as long as TJmax is not exceeded 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Micronas Dec. 22, 2008; DSH000145_003EN 13 HAL57x, HAL58x 3.5. Recommended Operating Conditions DATA SHEET Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol VDD TA ton 1) Parameter Supply Voltage Ambient Temperature for Continuous Operation Supply Time for Pulsed Mode Pin No. 1 Min. 3.75 −40 − Typ. Max. 24 851) Unit V °C μs 30 − when using the”K” type and VDD ≤16 V Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage on and off (pulse mode). Please refer to Section 5.4. on page 34 for details. 14 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL57x, HAL58x 3.6. Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 12 V. Symbol IDDlow Parameter Low Current Consumption over Temperature Range High Current Consumption over Temperature Range Overvoltage Protection at Supply Internal Oscillator Chopper Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time Output Fall Time Pin No. 1 Min. 5 4.5 IDDhigh VDDZ fosc 1 1 − 12 − − Typ. 6 6 14.3 28.5 145 Max. 6.9 6.9 17 32 − Unit mA mA mA V kHz IDD = 25 mA, TJ = 25 °C, t = 20 ms for HAL579 only Test Conditions ten(O) tr tf 1 1 1 − − − 30 0.4 0.4 − 1.6 1.6 µs µs µs 1) VDD = 12 V, Rs = 30 Ω VDD = 12 V, Rs = 30 Ω SOT89B Package Thermal Resistance Rthja Rthjc Rthjs Junction to Ambient Junction to Case Junction to Solder Point − − − − − − − − − 2092) 562) 823) K/W K/W K/W 30 mm x 10 mm x 1.5 mm, pad size (see Fig. 3–6) TO92UA Package Thermal Resistance Rthja Rthjc Rthjs 1) 2) 3) Junction to Ambient Junction to Case Junction to Solder Point − − − − − − − − − 2462) 70 2) K/W K/W K/W 1273) B > BON + 2 mT or B < BOFF − 2 mT for HAL57x, B > BOFF + 2 mT or B < BON − 2 mT for HAL58x Measured with a 1s0p board Measured with a 1s1p board 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3–6: Recommend pad size SOT89B-1 Dimensions in mm Micronas Dec. 22, 2008; DSH000145_003EN 15 HAL57x, HAL58x 3.7. Magnetic Characteristics Overview at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for TJ = 25 °C and VDD = 12 V. Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Switching Type HAL573 unipolar Parameter TJ −40 °C 25 °C 100 °C 140 °C HAL574 unipolar −40 °C 25 °C 100 °C 140 °C HAL575 latching −40 °C 25 °C 100 °C 140 °C HAL576 unipolar −40 °C 25 °C 100 °C 140 °C HAL579 latching −40 °C 25 °C 100 °C 140 °C HAL581 unipolar inverted −40 °C 25 °C 100 °C 140 °C HAL584 unipolar inverted −40 °C 25 °C 100 °C 140 °C Min. 37 37 34 34 5.5 5.5 5.5 5 0.5 0.5 0.5 0.5 3.3 3.3 2.8 2 5.5 5.5 5.5 5.5 6.5 6.5 6.5 6.5 5 5 5 4.5 On point BON Typ. 44.2 43.5 40 38 9.2 9.2 9.2 8.8 4 4 4 4 5.7 5.7 5.5 5.2 12.0 12.0 12.0 12.0 10 10 10 10.4 7.2 7.2 7.2 8 Max. 49 49 46 46 12 12 12 12.5 8 8 8 8 8.2 8.2 8.3 8.3 18.5 18.5 18.5 18.5 13.8 13.8 13.8 14.3 11.5 11.5 11.5 11.5 Min. 34 34 32 32 5 5 5 3.5 -8 -8 -8 -8 1.8 1.8 1.3 0.3 -18.5 -18.5 -18.5 -18.5 8 8 8 8 5.5 5.5 5.5 5.5 Off point BOFF Typ. 42 41.5 38 36 7.2 7.2 7.2 7.5 -4 -4 -4 -4 4.2 4.2 4 3.7 -12.0 -12.0 -12.0 -12.0 12 12 12 12 9.2 9.2 9.2 9 Max. 48 47 44 44 11.5 11.5 11.5 11.5 -0.5 -0.5 −0.5 -0.5 6.7 6.7 6.8 7 -5.5 -5.5 -5.5 -5.5 15.5 15.5 15.5 16 12 12 12 12.5 Min. 0.5 0.5 0.5 0.2 0.5 0.5 0.5 0.2 5 5 5 5 0.3 0.3 0.3 0.3 16.0 16.0 16.0 16.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.2 DATA SHEET Hysteresis BHYS Typ. 2.2 2 2 2 2 2 2 1.9 8 8 8 8 1.9 1.9 1.9 1.9 22.0 22.0 22.0 22.0 2 2 2 2 2 2 2 1.9 Max. 5 5 5 5 3 3 3 3.5 11 11 11 11 3.5 3.5 3.5 3.5 28.0 28.0 28.0 28.0 3.5 3.5 3.5 3.5 3.0 3.0 3.0 3.5 Unit mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT Note: For detailed descriptions of the individual types, see pages 19 and following. 16 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL57x, HAL58x mA 25 20 IDD 15 10 5 0 HAL 57x, HAL 58x mA 20 18 HAL 57x, HAL 58x IDDhigh IDD 16 14 12 IDDhigh IDDlow VDD = 3.75 V VDD = 12 V VDD = 24 V 10 8 −5 −10 −15 −20 −15 −10 −5 TA = −40 °C TA = 25 °C TA = 100 °C 0 5 10 15 20 25 30 V VDD 6 IDDlow 4 2 0 −50 0 50 100 150 TA 200 °C Fig. 3–7: Typical supply current versus supply voltage Fig. 3–9: Typical current consumption versus ambient temperature mA 20 18 IDD 16 14 12 10 8 6 4 2 0 0 1 2 3 HAL 57x, HAL 58x TA = −40 °C TA = 25 °C TA = 100 °C IDDhigh fosc kHz 200 180 160 140 120 100 80 60 HAL 57x, HAL 58x VDD = 3.75 V VDD = 12 V VDD = 24 V IDDlow 40 20 4 VDD 5 6V 0 −50 0 50 100 150 TA 200 °C Fig. 3–8: Typical supply current versus supply voltage Fig. 3–10: Typ. internal chopper frequency versus ambient temperature Micronas Dec. 22, 2008; DSH000145_003EN 17 HAL57x, HAL58x DATA SHEET kHz 200 180 fosc HAL 57x, HAL 58x kHz 200 180 fosc 160 140 120 HAL 57x, HAL 58x 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25 VDD 30 V TA = −40 °C TA = 25 °C TA = 100°C 100 TA = −40 °C 80 60 40 20 0 3 4 5 6 7 VDD 8V TA = 25 °C TA = 100°C TA = 140°C Fig. 3–11: Typ. internal chopper frequency versus supply voltage Fig. 3–12: Typ. internal chopper frequency versus supply voltage 18 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL573 Applications The HAL573 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. 4. Type Descriptions 4.1. HAL573 The HAL573 is a unipolar switching sensor with low sensitivity (see Fig. 4–1). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Current consumption IDDhigh BHYS Magnetic Features: – switching type: unipolar – low sensitivity – typical BON: 43.5 mT at room temperature – typical BOFF: 41.5 mT at room temperature – typical temperature coefficient of magnetic switching points is −1100 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 IDDlow BOFF BON B Fig. 4–1: Definition of magnetic switching points for the HAL573 Magnetic Characteristics at TJ = −40 °C° to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 37 37 34 34 On point BON Typ. 44.2 43.5 40 38 Max. 49 49 46 46 Off point BOFF Min. 34 34 32 32 Typ. 42 41.5 38 36 Max. 48 47 44 44 Hysteresis BHYS Min. 0.5 0.5 0.5 0.2 Typ. 2.2 2 2 2 Max. 5 5 5 5 Magnetic Offset Min. Typ. 44.6 42.5 39 39 Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 19 HAL573 DATA SHEET mT 50 HAL 573 mT 60 HAL 573 BON BOFF BON 45 BOFF BON BOFF BON BON BOFF 35 TA = −40 °C 30 TA = 25 °C TA = 100 °C TA = 125 °C 25 0 5 10 15 20 25 VDD 30 V BOFF BON BOFF 55 50 BONmax BOFFmax 40 45 40 BONtyp 35 BOFFtyp BONmin BOFFmin 30 VDD = 3.75 V VDD = 12 V...24 V 25 −50 0 50 100 150 TA, TJ 200 °C Fig. 4–2: Typ. magnetic switching points versus supply voltage Fig. 4–4: Magnetic switching points versus temperature mT 50 HAL 573 Note: In the diagram “Magnetic switching points versus temperature” the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 45 40 35 TA = −40 °C 30 TA = 25 °C TA = 100 °C TA = 125 °C 25 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–3: Magnetic switching points versus supply voltage 20 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL574 Applications The HAL574 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and 4.2. HAL574 The HAL574 is a medium sensitive unipolar switching sensor (see Fig. 4–5). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In this two-wire sensor family, the HAL584 is a sensor with the same magnetic characteristics but with an inverted output characteristic. – rotating speed measurement. Current consumption IDDhigh BHYS Magnetic Features: – switching type: unipolar – medium sensitivity – typical BON: 9.2 mT at room temperature – typical BOFF: 7.2 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 IDDlow BOFF BON B Fig. 4–5: Definition of magnetic switching points for the HAL574 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 5.5 5.5 5.5 5 On point BON Typ. 9.2 9.2 9.2 8.8 Max. 12 12 12 12.5 Off point BOFF Min. 5 5 5 3.5 Typ. 7.2 7.2 7.2 7.5 Max. 11.5 11.5 11.5 11.5 Hysteresis BHYS Min. 0.5 0.5 0.5 0.2 Typ. 2 2 2 1.9 Max. 3 3 3 3.5 Magnetic Offset Min. Typ. 8.2 8.2 8.2 8.2 Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 21 HAL574 DATA SHEET mT 12 HAL 574 mT 14 HAL 574 BON BOFF 10 BON BON BOFF BONmax 12 BOFFmax 10 8 BOFF 6 6 4 TA = −40 °C 2 TA = 25 °C TA = 100 °C TA = 125 °C 0 0 5 10 15 20 25 VDD 30 V 0 −50 0 2 VDD = 3.75 VDD = 12 V...24 V 50 100 150 TA, TJ 200 °C 4 BONmin BOFFmin 8 BOFFtyp BONtyp Fig. 4–6: Typ. magnetic switching points versus supply voltage Fig. 4–8: Magnetic switching points versus temperature mT 12 HAL 574 Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 10 BON 8 BOFF 6 4 TA = −40 °C TA = 25 °C TA = 100 °C TA = 125 °C 2 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–7: Typ. magnetic switching points versus supply voltage 22 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL575 Applications The HAL575 is designed for applications with both magnetic polarities and weak magnetic amplitudes at the sensor position such as: – applications with large airgap or weak magnets, – multipole magnet applications, – contactless solutions to replace micro switches, – rotating speed measurement. 4.3. HAL575 The HAL575 is a medium sensitive latching switching sensor (see Fig. 4–9). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities on the branded side of the package. Current consumption IDDhigh BHYS IDDlow BOFF 0 BON B Magnetic Features: – switching type: latching – medium sensitivity – typical BON: 4 mT at room temperature – typical BOFF: −4 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Fig. 4–9: Definition of magnetic switching points for the HAL575 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 0.5 0.5 0.5 0.5 On point BON Typ. 4 4 4 4 Max. 8 8 8 8 Off point BOFF Min. −8 −8 −8 −8 Typ. −4 −4 −4 −4 Max. −0.5 −0.5 −0.5 −0.5 Hysteresis BHYS Min. 5 5 5 5 Typ. 8 8 8 8 Max. 11 11 11 11 Magnetic Offset Min. Typ. 0 0 0 0 Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 23 HAL575 DATA SHEET mT 6 BON BON BOFF 4 HAL 575 mT 9 7 5 HAL 575 BONmax BON BOFF BONtyp 2 TA = −40 °C 0 TA = 25 °C TA = 100 °C TA = 125 °C −2 1 −1 −3 −5 −4 BOFF −6 −7 −9 −50 VDD = 3.75 V...12 V VDD = 24 V BOFFmin 0 50 100 150 TA, TJ 200 °C BOFFtyp BONmin BOFFmax 3 0 5 10 15 20 25 VDD 30 V Fig. 4–10: Typ. magnetic switching points versus supply voltage Fig. 4–12: Magnetic switching points versus temperature mT 6 BON 4 HAL 575 Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 2 TA = −40 °C 0 TA = 25 °C TA = 100 °C TA = 170 °C −2 −4 BOFF −6 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–11: Typ. magnetic switching points versus supply voltage 24 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL576 Applications The HAL576 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and 4.4. HAL576 The HAL576 is a medium sensitive unipolar switching sensor (see Fig. 4–13). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. – rotating speed measurement. Current consumption Magnetic Features: – switching type: unipolar – medium sensitivity – typical BON: 5.7 mT at room temperature – typical BOFF: 4.2 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BOFF BON B IDDlow BHYS IDDhigh Fig. 4–13: Definition of magnetic switching points for the HAL576 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 3.3 3.3 2.8 2 On point BON Typ. 5.7 5.7 5.5 5.2 Max. 8.2 8.2 8.3 8.3 Off point BOFF Min. 1.8 1.8 1.3 0.3 Typ. 4.2 4.2 4 3.7 Max. 6.7 6.7 6.8 7 Hysteresis BHYS Min. 0.3 0.3 0.3 0.3 Typ. 1.9 1.9 1.9 1.9 Max. 3.5 3.5 3.5 3.5 Magnetic Offset Min. Typ. 5 5 5 4.5 Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 25 HAL576 DATA SHEET mT 8 7 BON 6 5 4 HAL 576 mT 9 8 7 6 HAL 576 BONmax BON BOFF BON BOFF BOFFmax BOFF 5 4 VDD = 3.75 V VDD = 12 V VDD = 24 V BONtyp 3 TA = −40 °C 2 1 0 TA = 25 °C TA = 100 °C 3 2 1 0 −50 BOFFtyp BONmin BOFFmin 0 50 100 150 TA, TJ 200 °C 0 5 10 15 20 25 VDD 30 V Fig. 4–14: Typ. magnetic switching points versus supply voltage Fig. 4–16: Magnetic switching points versus temperature mT 8 7 6 5 4 BOFF 3 2 1 0 3.0 TA = −40 °C TA = 25 °C TA = 100 °C HAL 576 Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF BON 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–15: Typ. magnetic switching points versus supply voltage 26 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL579 Applications The HAL579 is designed for applications with both magnetic polarities and weak magnetic amplitudes at the sensor position such as: – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. 4.5. HAL579 The HAL579 is a unipolar switching sensor with low sensitivity (see Fig. 4–17). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities on the branded side of the package. Current consumption IDDhigh BHYS IDDlow BOFF 0 BON B Magnetic Features: – switching type: latching – medium sensitivity – typical BON: 12.0 mT at room temperature – typical BOFF: -12.0 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Fig. 4–17: Definition of magnetic switching points for the HAL579 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 5.5 5.5 5.5 5.5 On point BON Typ. 12.0 12.0 12.0 12.0 Max. 18.5 18.5 18.5 18.5 Off point BOFF Min. −18.5 −18.5 −18.5 −18.5 Typ. −12.0 −12.0 −12.0 −12.0 Max. −5.5 −5.5 −5.5 −5.5 Hysteresis BHYS Min. 16.0 16.0 16.0 16.0 Typ. 22.0 22.0 22.0 22.0 Max. 28.0 28.0 28.0 28.0 Magnetic Offset Min. −7.0 −7.0 −7.0 −7.0 Typ. 0.0 0.0 0.0 0.0 Max. 7.0 7.0 7.0 7.0 Unit mT mT mT mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 27 HAL579 DATA SHEET mT 14 BON HAL 579 mT 20 HAL 579 BONmax BON 10 BOFF 6 BON BOFF 12 BONtyp BONmin 2 TA = −40 °C TA = 25 °C −2 TA = 125 °C −4 4 VDD = 24 V VDD = 3.75 V...12 V BOFFmax −6 −12 −10 BOFF −20 −50 BOFFmin 0 50 100 150 TA, TJ 200 °C BOFFtyp −14 0 5 10 15 20 25 VDD 30 V Fig. 4–18: Typ. magnetic switching points versus supply voltage Fig. 4–20: Magnetic switching points versus temperature mT 14 HAL 579 Note: In the diagram “Magnetic switching points versus temperature” the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 10 BOFF 6 BON 2 TA = −40 °C TA = 25 °C TA = 125 °C −2 −6 −10 BOFF −14 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–19: Magnetic switching points versus supply voltage 28 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL581 Applications The HAL581 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. 4.6. HAL581 The HAL581 is a medium sensitive unipolar switching sensor with an inverted output (see Fig. 4–21). The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: – switching type: unipolar inverted – medium sensitivity – typical BON: 10 mT at room temperature – typical BOFF: 12 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Current consumption IDDhigh BHYS IDDlow 0 BON BOFF B Fig. 4–21: Definition of magnetic switching points for the HAL581 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 6.5 6.5 6.5 6.5 On point BON Typ. 10 10 10 10.4 Max. 13.8 13.8 13.8 14.3 Off point BOFF Min. 8 8 8 8 Typ. 12 12 12 12 Max. 15.5 15.5 15.5 16 Hysteresis BHYS Min. 0.5 0.5 0.5 0.5 Typ. 2 2 2 2 Max. 3.5 3.5 3.5 3.5 Magnetic Offset Min. Typ. 11 11 11 11 Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 29 HAL581 DATA SHEET mT 14 BON 13 BOFF 12 11 BON 10 BOFF HAL 581 mT 18 16 14 12 10 8 HAL 581 BON BOFF BOFFmax BONmax BOFFtyp BONtyp BOFFmin BONmin VDD = 3.75 V VDD = 12 V...24 V 9 8 7 6 TA = −40 °C TA = 25 °C TA = 100 °C TA = 125 °C 6 4 2 0 −50 0 5 10 15 20 25 VDD 30 V 0 50 100 TA, TJ 150 °C Fig. 4–22: Typ. magnetic switching points versus supply voltage Fig. 4–24: Magnetic switching points versus temperature mT 14 BON 13 BOFF 12 11 10 BON 9 TA = −40 °C 8 7 6 3.0 TA = 25 °C TA = 100 °C TA = 125 °C 3.5 4.0 4.5 5.0 HAL 581 Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 5.5 6.0 V VDD Fig. 4–23: Typ. magnetic switching points versus supply voltage 30 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL584 Applications The HAL584 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. 4.7. HAL584 The HAL584 is a medium sensitive unipolar switching sensor with an inverted output (see Fig. 4–25). The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In this two-wire sensor family, the HAL574 is a sensor with the same magnetic characteristics but with a normal output characteristic. Current consumption IDDhigh BHYS Magnetic Features: – switching type: unipolar inverted – medium sensitivity – typical BON: 7.2 mT at room temperature – typical BOFF: 9.2 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON BOFF B IDDlow Fig. 4–25: Definition of magnetic switching points for the HAL584 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ −40 °C 25 °C 100 °C 140 °C Min. 5 5 5 4.5 On point BON Typ. 7.2 7.2 7.2 8 Max. 11.5 11.5 11.5 11.5 Off point BOFF Min. 5.5 5.5 5.5 5.5 Typ. 9.2 9.2 9.2 9 Max. 12 12 12 12.5 Hysteresis BHYS Min. 0.5 0.5 0.5 0.2 Typ. 2 2 2 1.9 Max. 3.0 3.0 3.0 3.5 Magnetic Offset Min. Typ. 8.2 8.2 8.2 8.2 Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas Dec. 22, 2008; DSH000145_003EN 31 HAL584 DATA SHEET mT 12 HAL 584 mT 14 HAL 584 BON BOFF 10 BOFF BON BOFF BOFFmax 12 BONmax 10 8 BON 6 6 4 TA = −40 °C TA = 25 °C TA = 100 °C 2 TA = 125 °C 2 4 VDD = 3.75 V...12 V VDD = 24 V 150 °C 8 BONtyp BOFFmin BONmin BOFFtyp 0 0 5 10 15 20 25 VDD 30 V 0 −50 0 50 100 TA, TJ Fig. 4–26: Typ. magnetic switching points versus supply voltage Fig. 4–28: Magnetic switching points versus temperature mT 12 HAL 584 Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 10 BOFF 8 BON 6 4 TA = −40 °C TA = 25 °C TA = 100 °C 2 TA = 125 °C 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–27: Typ. magnetic switching points versus supply voltage 32 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL57x, HAL58x 5.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 14). Typically, the sensors operate with supply voltages above 3 V. However, below 3.75 V, the current consumption and the magnetic characteristics may be outside the specification. 5. Application Notes 5.1. Application Circuit Fig. 5–1 shows a simple application with a two-wire sensor. The current consumption can be detected by measuring the voltage over RL. For correct functioning of the sensor, the voltage between pin 1 and 2 (VDD) must be a minimum of 3.75 V. With the maximum current consumption of 17 mA, the maximum RL can be calculated as: V SUPmin – 3.75 V = -----------------------------------------17 mA R Lmax Note: The functionality of the sensor below 3.75 V is not tested on a regular base. For special test conditions, please contact Micronas. VSUP VSIG RL 1 VDD 5.3. Start-Up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 15). During the initialization time, the current consumption is not defined and can toggle between low and high. 2 or x GND x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 5–1: Application circuit 1 HAL57x After ten(O), the current consumption will be high if the applied magnetic field B is above BON. The current consumption will be low if B is below BOFF. HAL58x In case of sensors with an inverted switching behavior, the current consumption will be low if B > BOFF and high if B < BON. Note: For magnetic fields between BOFF and BON, the current consumption of the HAL sensor will be either low or high after applying VDD. In order to achieve a defined current consumption, the applied magnetic field must be above BON, respectively, below BOFF. For applications with disturbances on the supply line or radiated disturbances, a series resistor RV (ranging from 10 Ω to 30 Ω) and a capacitor both placed close to the sensor are recommended (see Fig. 5–2). In this case, the maximum RL can be calculated as: VSUPmin – 3.75 V = ------------------------------------------ – RV 17 mA R Lmax VSUP VSIG 1 VDD RV 4.7 nF RL 2 or x GND x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 5–2: Application circuit 2 Micronas Dec. 22, 2008; DSH000145_003EN 33 HAL57x, HAL58x 5.4. Ambient Temperature Due to internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = TA + Δ T DATA SHEET 5.5. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–3). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards ISO 7637. Please contact Micronas for detailed information and first EMC and ESD results. At static conditions and continuous operation, the following equation applies: Δ T = IDD × VDD × R th RV1 100 Ω RV2 30 Ω 1 VDD For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: VEMC T Amax = T Jmax – Δ T 4.7 nF 2, x GND For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Due to the range of IDDhigh, self-heating can be critical. The junction temperature can be reduced with pulsed supply voltage. For supply times (ton) ranging from 30 μs to 1 ms, the following equation can be used: ton T = IDD × VDD × R th × -------------------t off + ton x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 5–3: Recommded EMC test circuit 34 Dec. 22, 2008; DSH000145_003EN Micronas DATA SHEET HAL57x, HAL58x intentionally left vacant Micronas Dec. 22, 2008; DSH000145_003EN 35 HAL57x, HAL58x 6. Data Sheet History 1. Data sheet: “HAL574...HAL576, 581, 584 Two-wire Hall Effect Sensor Family”, April 11, 2002 6251-5381DS. First release of the data sheet. Major changes: – “K” temperature range specified – HAL571 and HAL573 deleted – HAL576 added 2. Data Sheet: “HAL573...HAL576, HAL581...HAL584 Two-Wire Hall Effect Sensor Family”, Nov. 27, 2003, 6251-538-2DS. Second release of the data sheet. Major changes: – specification for HAL573 added – new package diagrams for SOT89B-1 and TO92UA-1 – package diagram for TO92UA-2 added – ammopack diagrams for TO92UA-1/-2 added 3. Data Sheet: “HAL573...HAL576, HAL579 HAL581...HAL584 Two-Wire Hall-Effect Sensor Family”, Nov. 5, 2007, DSH000145_001EN. Third release of the data sheet. Major changes: – specification for HAL579 added – specification for HAL573 updated – package diagrams for SOT89B-1, TO92UA-1, and TO92UA-2 updated 4. Data Sheet: “HAL573...HAL576, HAL579 HAL581...HAL584 Two-Wire Hall-Effect Sensor Family”, March 7, 2008, DSH000145_002EN. Fourth release of the data sheet. Minor changes: – specification for HAL579 updated – ammopack diagrams for TO92UA-1 and TO92UA-2 updated 5. Data Sheet: “HAL573...HAL576, HAL579 HAL581...HAL584 Two-Wire Hall-Effect Sensor Family”, Dec. 22, 2008, DSH000145_003EN. Fifth release of the data sheet. Major changes: – Section 1.6. Solderability and Welding updated – Section 3.5. Recommended Operating Conditions updated DATA SHEET Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com 36 Dec. 22, 2008; DSH000145_003EN Micronas