HAL710SF-K

Hardware Documentation D at a S h e e t HAL 710, HAL 730, Hall-Effect Sensors with Direction Detection ® ® Edition Oct. 13, 2009 DSH000031_002EN HAL 710, HAL 730 Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks – HAL DATA SHEET Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 Oct. 13, 2009; DSH000031_002EN Micronas DATA SHEET HAL 710, HAL 730 Contents Page 4 4 4 5 5 5 5 5 6 9 9 10 10 10 10 10 11 15 15 17 17 17 17 17 18 18 19 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 4. 4.1. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 6. Title Introduction Features Family Overview Marking Code Operating Junction Temperature Range HALL Sensor Package Codes Solderability and Welding Pin Connections Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Type Description HAL 710, HAL 730 Application Notes Ambient Temperature Extended Operating Conditions Signal Delay Test Mode Activation EMC and ESD Start-up Behavior Data Sheet History Micronas Oct. 13, 2009; DSH000031_002EN 3 HAL 710, HAL 730 Hall-Effect Sensors with Direction Detection Release Note: Revision bars indicate significant changes to the previous edition. 1.1. Features DATA SHEET – generation of Count Signals and Direction Signals – delay of the Count Signals with respect to the Direction Signal of 1 μs minimum – switching type: latching – switching offset compensation at typically 150 kHz 1. Introduction The HAL 710 and the HAL 730 are monolithic integrated Hall-effect sensors manufactured in CMOS technology with two independent Hall plates S1 and S2 spaced 2.35 mm apart. The devices have two open-drain outputs: – The Count Output operates like a single latched Hall switch according to the magnetic field present at Hall plate S1 (see Fig. 4–1). – The Direction Output indicates the direction of a linear or rotating movement of magnetic objects. In combination with an active target providing a sequence of alternating magnetic north and south poles, the sensors generate the signals required to control position, speed, and direction of the target movement. The internal circuitry evaluates the direction of the movement and updates the Direction Output at every edge of the Count Signal (rising and falling). The state of the Direction Output only changes at a rising or falling edge of the Count Output. The design ensures a setup time for the Direction Output with respect to the corresponding Count Signal edge of 1/2 clock periods (1 μs minimum). The devices include temperature compensation and active offset compensation. These features provide excellent stability and matching of the switching points in the presence of mechanical stress over the whole temperature and supply voltage range. This is required by systems determining the direction from the comparison of two signals. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from −40 °C up to 125 °C. The HAL 710 and the HAL 730 are available in the SMD-package SOT89B-2. – operation from 3.8 V to 24 V supply voltage – overvoltage protection at all pins – reverse-voltage protection at VDD-pin – robustness of magnetic characteristics against mechanical stress – short-circuit protected open-drain outputs by thermal shut down – constant switching points over a wide supply voltage range – EMC corresponding to ISO 7637 1.2. Family Overview The types differ according to the behavior of the Direction Output. Type HAL 710 Direction Output: Definition of Output States Output high, when edge of comparator 1 precedes edge of comparator 2 Output high, when edge of comparator 2 precedes edge of comparator 1 HAL 730 4 Oct. 13, 2009; DSH000031_002EN Micronas DATA SHEET HAL 710, HAL 730 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = −40 °C to +140 °C E: TJ = −40 °C to +100 °C Note: Due to power dissipation, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 5.1. on page 17 for details. 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type K HAL 710 HAL 730 710K 730K Temperature Range E 710E 730E HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-2 Type: 710 Example: HAL710SF-K → Type: 710 → Package: SOT89B-2 → Temperature Range: TJ = −40 °C to +140 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. 1.7. Pin Connections 1 VDD 3 Count Output 1.6. Solderability and Welding Solderability During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. 4 GND 2 Direction Output Fig. 1–1: Pin configuration Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. Micronas Oct. 13, 2009; DSH000031_002EN 5 HAL 710, HAL 730 2. Functional Description The HAL 710 and the HAL 730 are monolithic integrated circuits with two independent subblocks each consisting of a Hall plate and the corresponding comparator. Each subblock independently switches the comparator output in response to the magnetic field at the location of the corresponding sensitive area. If a magnetic field with flux lines perpendicular to the sensitive area is present, the biased Hall plate generates a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The output of comparator 1 (connected to S1) directly controls the Count Output. The outputs of both comparators enter the Direction Detection Block controlling the state of the Direction Output. The Direction Output is updated at every edge of comparator 1 (rising and falling). The previous state of the Direction Output is maintained between two edges of the Count Output and in case the edges at comparator 1 and comparator 2 occur in the same clock period. The subblocks are designed to have closely matched switching points. The temperature-dependent bias – common to both subblocks – increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the comparator switches to the appropriate state. The built-in hysteresis prevents oscillations of the outputs. In order to achieve good matching of the switching points of both subblocks, the magnetic offset caused by mechanical stress is compensated for by use of switching offset compensation techniques. Therefore, an internal oscillator provides a two-phase clock to both subblocks. For each subblock, the Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Shunt protection devices clamp voltage peaks at the output pins and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to −15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to −15 V. Clock DATA SHEET t BS1 BS1on BS2 BS2on t Count Output VOH VOL Direction Output VOH VOL t Idd t 1/fosc tf t Fig. 2–1: HAL 710 timing diagram with respect to the clock phase Fig. 2–2 and Fig. 2–3 on page 7 show how the output signals are generated by the HAL 710 and the HAL 730. The magnetic flux density at the locations of the two Hall plates is shown by the two sinusodial curves at the top of each diagram. The magnetic switching points are depicted as dashed lines for each Hall plate separately. At the time t = 0, the signal S2 precedes the signal S1. The Direction Output is in the correct state according to the definition of the sensor type. When the phase of the magnetic signal changes its sign, the Direction-Output switches its state with the next signal edge of the Count Output. 6 Oct. 13, 2009; DSH000031_002EN Micronas DATA SHEET HAL 710, HAL 730 HAL710 Bon,S1 Boff,S1 Bon,S2 Boff,S2 S1 Count Output Pin 3 S2 Direction Output Pin 2 0 Fig. 2–2: HAL 710 timing diagram time HAL730 Bon,S1 Boff,S1 Bon,S2 Boff,S2 S1 Count Output Pin 3 S2 Direction Output Pin 2 0 Fig. 2–3: HAL 730 timing diagram time Micronas Oct. 13, 2009; DSH000031_002EN 7 HAL 710, HAL 730 DATA SHEET 1 VDD Reverse Voltage and Overvoltage Protection Temperature Dependent Bias Hysteresis Control Test-Mode Control Short Circuit and Overvoltage Protection Hall Plate 1 Comparator 3 Switch S1 Output Count Output Hall Plate 2 Comparator Clock S2 Switch Direction Detection 2 Output Direction Output 4 GND Fig. 2–4: HAL 710 and HAL 730 block diagram 8 Oct. 13, 2009; DSH000031_002EN Micronas DATA SHEET HAL 710, HAL 730 3. Specifications 3.1. Outline Dimensions Fig. 3–1: SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas Weight approximately 0.034 g Micronas Oct. 13, 2009; DSH000031_002EN 9 HAL 710, HAL 730 3.2. Dimensions of Sensitive Area 0.25 mm × 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-2 x1 + x2 x1 = x2 y (2.35±0.001) mm 1.175 mm 0.975 mm DATA SHEET 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol VDD VO IO TJ 1) Parameter Supply Voltage Output Voltage Continuous Output Current Junction Temperature Range Pin No. 1 2, 3 2, 3 Min. −15 −0.3 − −40 Max. 281) 281) 201) 170 Unit V V mA °C as long as TJmax is not exceeded 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol VDD IO VO Parameter Supply Voltage Pin No. 1 3 3 Min. 3.8 0 0 Typ. − − − Max. 24 10 24 Unit V mA V Continuous Output Current Output Voltage (output switch off) 10 Oct. 13, 2009; DSH000031_002EN Micronas DATA SHEET HAL 710, HAL 730 3.6. Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24V, GND = 0 V at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 5 V. Symbol IDD IDD VDDZ VOZ VOL VOL IOH IOH fosc ten(O) tr tf RthSB case SOT89B-2 Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Output Voltage Output Voltage over Temperature Range Output Leakage Current Pin No. 1 1 1 Min. 3 2 − − − − − − 100 − − − − Typ. 5.5 7 28.5 Max. 9 10 32 Unit mA mA V Test Conditions TJ = 25 °C IDD = 25 mA, TJ = 25 °C, t = 2 ms IOL = 20 mA, TJ = 25 °C, t = 15 ms IOL = 10 mA, TJ = 25 °C IOL = 10 mA, Output switched off, TJ = 25 °C, VOH = 3.8 V to 24 V Output switched off, TJ ≤ 140 °C, VOH = 3.8 V to 24 V 2,3 28 32 V 2,3 2,3 2,3 130 130 0.06 − 150 50 280 400 0.1 mV mV μA μA kHz μs μs μs K/W Output Leakage Current over Temperature Range Internal Sampling Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time 2,3 − 1 10 − − − − 200 VDD = 12 V, B>Bon + 2 mT or B