HAL815_1

Hardware Documentation Data Sheet HAL 815 Programmable Linear Hall-Effect Sensor ® Edition Feb. 7, 2006 6251-537-3DS HAL 815 Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks – HAL DATA SHEET Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 Contents Page 4 4 4 5 5 5 5 5 5 6 6 8 10 10 11 13 13 17 17 17 18 18 19 20 20 20 21 23 23 23 23 24 24 25 25 25 27 28 29 29 30 Section 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. 2. 2.1. 2.2. 2.3. 2.3.1. 2.3.2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 3.8. 3.9. 3.10. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 6. Title Introduction Major Applications Features Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability Pin Connections and Short Descriptions Functional Description General Function Digital Signal Processing and EEPROM Calibration Procedure General Procedure Calibration of the Angle Sensor Specifications Outline Dimensions Dimensions of Sensitive Area Position of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Open-Circuit Detection Overvoltage and Undervoltage Detection Typical Characteristics Application Notes Application Circuit Use of two HAL815 in Parallel Temperature Compensation Ambient Temperature EMC and ESD Programming of the Sensor Definition of Programming Pulses Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information Data Sheet History Micronas Feb. 7, 2006; 6251-537-3DS 3 HAL 815 Programmable Linear Hall Effect Sensor Release Note: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL815 is a member of the Micronas family of programmable linear Hall sensors. As an extension to the HAL805, it offers open-circuit, as well as overvoltage and undervoltage detection. It is possible to program different sensors which are in parallel to the same supply voltage individually. The HAL815 is an universal magnetic field sensor with a linear output based on the Hall effect. The IC is designed and produced in sub-micron CMOS technology and can be used for angle or distance measurements if combined with a rotating or moving magnet. The major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at B = 0 mT), and output voltage range are programmable in a non-volatile memory. The sensor has a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the supply voltage. The HAL815 features a temperature-compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with redundancy and lock function for the calibration data, a serial interface for programming the EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the sensor accuracy. The HAL815 is programmable by modulating the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output voltage directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. This offers a low-cost alternative for all applications that presently need mechanical adjustment or laser trimming for calibrating the system. In addition, the temperature compensation of the Hall IC can be fit to all common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high accuracy. The calculation of the individual sensor characteristics and the programming of the EEPROM memory can DATA SHEET easily be done with a PC and the application kit from Micronas. The sensor is designed for hostile industrial and automotive applications and operates with typically 5 V supply voltage in the ambient temperature range from −40 °C up to 150 °C. The HAL815 is available in the very small leaded packages TO92UT-1 and TO92UT2. 1.1. Major Applications Due to the sensor’s versatile programming characteristics, the HAL815 is the optimal system solution for applications such as: – contactless potentiometers, – angle sensors, – distance measurements, – magnetic field and current measurement. 1.2. Features – high-precision linear Hall effect sensor with ratiometric output and digital signal processing – multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function – open-circuit (ground and supply line break detection), overvoltage and undervoltage detection – for programming an individual sensor within several sensors in parallel to the same supply voltage, a selection can be done via the output pin – temperature characteristics are programmable for matching all common magnetic materials – programmable clamping function – programming through a modulation of the supply voltage – operates from −40 °C up to 150 °C ambient temperature – operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V – operates with static magnetic fields and dynamic magnetic fields up to 2 kHz 4 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. – overvoltage and reverse-voltage protection at all pins – magnetic characteristics extremely robust against mechanical stress – short-circuit protected push-pull output – EMC and ESD optimized design 1.6. Solderability During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Solderability is guaranteed for one year from the date code on the package. 1.3. Marking Code The HAL815 has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range A HAL 815 815A K 815K 1.7. Pin Connections and Short Descriptions Pin No. 1 Pin Name VDD GND OUT OUT Type IN Short Description Supply Voltage and Programming Pin Ground Push Pull Output and Selection Pin 1.3.1. Special Marking of Prototype Parts 2 Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. 3 1 VDD 1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = −40 °C to +170 °C K: TJ = −40 °C to +140 °C The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.4. on page 24. OUT 3 2 GND Fig. 1–1: Pin configuration 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A and K Package: UT for TO92UT-1/-2 Type: 815 Example: HAL815UT-K → Type: 815 → Package: TO92UT → Temperature Range: TJ = −40°C to +140°C Micronas Feb. 7, 2006; 6251-537-3DS 5 HAL 815 2. Functional Description 2.1. General Function The HAL815 is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the supply voltage (ratiometric behavior). The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers, converted to an analog voltage with ratiometric behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP are explained in Section 2.2. on page 8. The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset. VDD (V) DATA SHEET analog output is switched off during the communication. Several sensors in parallel to the same supply and ground line can be programmed individually. The selection of each sensor is done via its output pin. The open-circuit detection provides a defined output voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant EEPROM cells. In addition, the sensor IC is equipped with devices for overvoltage and reverse-voltage protection at all pins. HAL 815 8 7 6 5 VDD VOUT (V) As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2–1). In the supply voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The VDD GND OUT digital analog Fig. 2–1: Programming with VDD modulation VDD Internally stabilized Supply and Protection Devices Temperature Dependent Bias Oscillator Open-circuit, Overvoltage, Undervoltage Detection Protection Devices Switched Hall Plate A/D Converter Digital Signal Processing D/A Converter Analog Output 100 Ω OUT EEPROM Memory Supply Level Detection Lock Control GND Digital Output 10 kΩ Fig. 2–2: HAL815 block diagram 6 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 ADC-READOUT Register 14 bit Digital Output Digital Signal Processing A/D Converter Digital Filter Multiplier Adder Limiter D/A Converter TC 6 bit TCSQ 5 bit MODE Register RANGE FILTER 3 bit 3 bit SENSITIVITY 14 bit VOQ 11 bit CLAMPLOW 10 bit CLAMPHIGH 11 bit LOCKR 1 bit Micronas Registers EEPROM Memory Lock Control Fig. 2–3: Details of EEPROM and Digital Signal Processing V 5 Range = 30 mT Filter = 500 Hz V 5 Clamp-high = 4.5 V Range = 100 mT Filter = 2 kHz VOUT 4 Clamp-high = 4 V VOUT 4 3 Sensitivity = 0.116 3 Sensitivity = −1.36 VOQ = −0.5 V 2 VOQ = 2.5 V 2 1 Clamp-low = 1 V 1 Clamp-low = 0.5 V 0 −40 −20 0 20 B 40 mT 0 −150 −100 −50 0 50 B 100 150 mT Fig. 2–4: Example for output characteristics Fig. 2–5: Example for output characteristics Micronas Feb. 7, 2006; 6251-537-3DS 7 HAL 815 2.2. Digital Signal Processing and EEPROM The DSP is the main part of this sensor and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2–3. Terminology: SENSITIVITY: name of the register or register value Sensitivity: name of the parameter DATA SHEET Filter = 2 kHz 2000 ADC- 1500 READOUT 1000 500 0 The EEPROM registers consist of three groups: Group 1 contains the registers for the adaption of the sensor to the magnetic system: MODE for selecting the magnetic field range and filter frequency, TC and TCSQ for the temperature characteristics of the magnetic sensitivity. Group 2 contains the registers for defining the output characteristics: SENSITIVITY, VOQ, CLAMP-LOW, and CLAMP-HIGH. The output characteristic of the sensor is defined by these 4 parameters (see Fig. 2–4 and Fig. 2–5 for examples). – The parameter VOQ (Output Quiescent Voltage) corresponds to the output voltage at B = 0 mT. – The parameter Sensitivity defines the magnetic sensitivity: Sensitivity = ΔVOUT ΔB −500 −1000 −1500 −2000 −200 Range 150 mT Range 90 mT Range 60 mT Range 30 mT −100 0 100 200 mT B Fig. 2–6: Typical ADC-READOUT versus magnetic field for filter = 2 kHz – The output voltage can be calculated as: VOUT ∼ Sensitivity × B + VOQ During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent output voltage and limited according to the clamping voltage. The result is converted to an analog signal and stabilized by a push-pull output transistor stage. The ADC-READOUT at any given magnetic field depends on the programmed magnetic field range but also on the filter frequency. Fig. 2–6 shows the typical ADC-READOUT values for the different magnetic field ranges with the filter frequency set to 2 kHz. The relationship between the minimum and maximum ADCREADOUT values and the filter frequency setting is listed in the following table. The output voltage range can be clamped by setting the registers CLAMP-LOW and CLAMP-HIGH in order to enable failure detection (such as short-circuits to VDD or GND and open connections). Group 3 contains the Micronas registers and LOCK for the locking of all registers. The Micronas registers are programmed and locked during production and are read-only for the customer. These registers are used for oscillator frequency trimming, A/D converter offset compensation, and several other special settings. An external magnetic field generates a Hall voltage on the Hall plate. The ADC converts the amplified positive or negative Hall voltage (operates with magnetic north and south poles at the branded side of the package) to a digital value. Positive values correspond to a magnetic north pole on the branded side of the package. The digital signal is filtered in the internal low-pass filter and is readable in the ADC-READOUT register. Depending on the programmable magnetic range of the Hall IC, the operating range of the A/D converter is from −30 mT...+30 mT up to −150 mT...+150 mT. Filter Frequency 80 Hz 160 Hz 500 Hz 1 kHz 2 kHz ADC-READOUT range −3968...3967 −1985...1985 −5292...5290 −2646...2645 −1512...1511 8 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 TC and TCSQ Note: During application design, it should be taken into consideration that the maximum and minimum ADC-READOUT is not exceeded during calibration and operation of the Hall IC. Consequently, the maximum and minimum magnetic fields that may occur in the operational range of a specific application should not saturate the A/D converter. Please note that the A/D converter saturates at magnetic fields well above, respectively below, the magnetic range limits. This large safety band between specified magnetic range and true operational range helps to avoid any saturation. Range The RANGE bits are the three lowest bits of the MODE register; they define the magnetic field range of the A/ D converter. Magnetic Field Range −30 mT...30 mT −40 mT...40 mT −60 mT...60 mT −75 mT...75 mT −80 mT...80 mT −90 mT...90 mT −100 mT...100 mT −150 mT...150 mT RANGE 0 4 5 1 6 2 7 3 The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaption is done by programming the TC (Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the output voltage characteristic can be fixed over the full temperature range. The sensor can compensate for linear temperature coefficients ranging from about −3100 ppm/K up to 400 ppm/K and quadratic coefficients from about −5 ppm/K² to 5 ppm/ K². Please refer to Section 4.3. on page 23 for the recommended settings for different linear temperature coefficients. Sensitivity The SENSITIVITY register contains the parameter for the multiplier in the DSP. The Sensitivity is programmable between −4 and 4. For VDD = 5 V, the register can be changed in steps of 0.00049. Sensitivity = 1 corresponds to an increase of the output voltage by VDD if the ADC-READOUT increases by 2048. For all calculations, the digital value from the magnetic field of the A/D converter is used. This digital information is readable from the ADC-READOUT register. Sensitivity = ΔVOUT * 2048 ΔADC-READOUT * VDD VOQ The VOQ register contains the parameter for the adder in the DSP. VOQ is the output voltage without external magnetic field (B = 0 mT, respectively ADC-READOUT = 0) and programmable from −VDD up to VDD. For VDD = 5 V, the register can be changed in steps of 4.9 mV. Note: If VOQ is programmed to a negative voltage, the maximum output voltage is limited to: VOUTmax = VOQ + VDD Filter The FILTER bits are the three highest bits of the MODE register; they define the −3 dB frequency of the digital low pass filter. −3 dB Frequency 80 Hz 160 Hz 500 Hz 1 kHz 2 kHz FILTER 0 1 2 3 4 For calibration in the system environment, a 2-point adjustment procedure (see Section 2.3.) is recommended. The suitable Sensitivity and VOQ values for each sensor can be calculated individually by this procedure. Micronas Feb. 7, 2006; 6251-537-3DS 9 HAL 815 Clamping Voltage The output voltage range can be clamped in order to detect failures like shorts to VDD or GND or an open circuit. The CLAMP-LOW register contains the parameter for the lower limit. The lower clamping voltage is programmable between 0 V and VDD/2. For VDD = 5 V, the register can be changed in steps of 2.44 mV. The CLAMP-HIGH register contains the parameter for the upper limit. The upper clamping voltage is programmable between 0 V and VDD. For VDD = 5 V, in steps of 2.44 mV. 2.3. Calibration Procedure 2.3.1. General Procedure DATA SHEET For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming and the corresponding software for the input of the register values. In this section, programming of the sensor using this programming tool is explained. Please refer to Section 5. on page 25 for information about programming without this tool. For the individual calibration of each sensor in the customer application, a two point adjustment is recommended (see Fig. 2–7 for an example). When using the application kit, the calibration can be done in three steps: LOCKR By setting this 1-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. This bit is active after the first power-off and power-on sequence after setting the LOCK bit. Step 1: Input of the registers which need not be adjusted individually The magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, and low and high clamping voltage are given for this application. Therefore, the values of the following registers should be identical for all sensors of the customer application. – FILTER (according to the maximum signal frequency) – RANGE (according to the maximum magnetic field at the sensor position) – TC and TCSQ (depends on the material of the magnet and the other temperature dependencies of the application) – CLAMP-LOW and CLAMP-HIGH (according to the application requirements) Write the appropriate settings into the HAL815 registers. Warning: This register cannot be reset! ADC-READOUT This 14-bit register delivers the actual digital value of the applied magnetic field before the signal processing. This register can be read out and is the basis for the calibration procedure of the sensor in the system environment. 10 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 2.3.2. Calibration of the Angle Sensor The following description explains the calibration procedure using an angle sensor as an example. The required output characteristic is shown in Fig. 2–7. – the angle range is from −25° to 25° – temperature coefficient of the magnet: −500 ppm/K Step 2: Calculation of VOQ and Sensitivity The calibration points 1 and 2 can be set inside the specified range. The corresponding values for VOUT1 and VOUT2 result from the application requirements. Low clamping voltage ≤ VOUT1,2 ≤ High clamping voltage For highest accuracy of the sensor, calibration points near the minimum and maximum input signal are recommended. The difference of the output voltage between calibration point 1 and calibration point 2 should be more than 3.5 V. Set the system to calibration point 1 and read the register ADC-READOUT. The result is the value ADCREADOUT1. Now, set the system to calibration point 2, read the register ADC-READOUT again, and get the value ADC-READOUT2. With these values and the target values VOUT1 and VOUT2, for the calibration points 1 and 2, respectively, the values for Sensitivity and VOQ are calculated as: Sensitivity = VOUT1 − VOUT2 ADC-READOUT1 − ADC-READOUT2 * 2048 VDD V 5 Clamp-high = 4.5 V Calibration point 1 VOUT 4 3 2 1 VOQ = VOUT1 − ADC-READOUT1 * Sensitivity * VDD 2048 Clamp-low = 0.5 V Calibration point 2 0 −30 −20 −10 0 10 20 Angle 30 ° This calculation has to be done individually for each sensor. Next, write the calculated values for Sensitivity and VOQ into the IC for adjusting the sensor. The sensor is now calibrated for the customer application. However, the programming can be changed again and again if necessary. Fig. 2–7: Example for output characteristics Step 3: Locking the Sensor The last step is activating the LOCK function with the “LOCK” command. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands. Warning: This register cannot be reset! Micronas Feb. 7, 2006; 6251-537-3DS 11 HAL 815 Step 1: Input of the registers which need not be adjusted individually The register values for the following registers are given for all applications: – FILTER Select the filter frequency: 500 Hz – RANGE Select the magnetic field range: 30 mT – TC For this magnetic material: 6 – TCSQ For this magnetic material: 14 – CLAMP-LOW For our example: 0.5 V – CLAMP-HIGH For our example: 4.5 V Enter these values in the software, and use the “write and store” command for permanently writing the values in the registers. Software Calibration: DATA SHEET Use the menu CALIBRATE from the PC software and enter the values 4.5 V for VOUT1 and 0.5 V for VOUT2. Set the system to calibration point 1 (angle 1 = −25°), hit the button “Read ADC-Readout1”, set the system to calibration point 2 (angle 2 = 25°), hit the button “Read ADC-Readout2”, and hit the button “Calculate”. The software will then calculate the appropriate VOQ and Sensitivity. This calculation has to be done individually for each sensor. Now, write the calculated values with the “write and store” command into the HAL815 for programming the sensor. Step 3: Locking the Sensor The last step is activating the LOCK function with the “LOCK” command. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands. Step 2: Calculation of VOQ and Sensitivity There are two ways to calculate the values for VOQ and Sensitivity. Manual Calculation: Set the system to calibration point 1 (angle 1 = −25°) and read the register ADC-READOUT. For our example, the result is ADC-READOUT1 = −2500. Next, set the system to calibration point 2 (angle 2 = 25°), and read the register ADC-READOUT again. For our example, the result is ADC-READOUT2 = +2350. With these measurements and the targets VOUT1 = 4.5 V and VOUT2 = 0.5 V, the values for Sensitivity and VOQ are calculated as Sensitivity = 4.5 V − 0.5 V −2500 − 2350 * 2048 = −0.3378 5V Warning: This register cannot be reset! VOQ = 4.5 V − −2500 * (−0.3378) * 5 V = 2.438 V 2048 12 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 3. Specifications 3.1. Outline Dimensions Fig. 3–1: TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread Weight approximately 0.12 g Micronas Feb. 7, 2006; 6251-537-3DS 13 HAL 815 DATA SHEET Fig. 3–2: TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g 14 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 Fig. 3–3: TO92UT-2: Dimensions ammopack inline Micronas Feb. 7, 2006; 6251-537-3DS 15 HAL 815 DATA SHEET Fig. 3–4: TO92UT-1: Dimensions ammopack inline, spread 16 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 3.2. Dimensions of Sensitive Area 0.25 mm x 0.25 mm 3.3. Position of Sensitive Areas TO92UT-1/-2 x y Bd center of the package 1.5 mm nominal 0.3 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol VDD VDD −IDD VOUT VOUT − VDD IOUT tSh TJ NPROG 1) 2) 3) 4) 5) Parameter Supply Voltage Supply Voltage Reverse Supply Current Output Voltage Excess of Output Voltage over Supply Voltage Continuous Output Current Output Short Circuit Duration Junction Temperature Range Number of Programming Cycles Pin No. 1 1 1 3 3,1 3 3 Min. −8.5 −14.41) 2) − −55) −55) Max. 8.5 14.41) 2) 501) 8.53) 14.43) 2) 2 Unit V V mA V V mA min °C °C −10 − −40 −40 − 10 10 1704) 150 100 as long as TJmax is not exceeded t < 10 min (VDDmin = −15 V for t < 1 min, VDDmax = 16 V for t < 1 min) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to −14 V) t < 1000h internal protection resistor = 100 Ω Micronas Feb. 7, 2006; 6251-537-3DS 17 HAL 815 3.4.1. Storage and Shelf Life DATA SHEET The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol VDD IOUT RL CL Parameter Supply Voltage Continuous Output Current Load Resistor Load Capacitance Pin No. 1 3 3 3 Min. 4.5 −1 4.5 0.33 Typ. 5 − − 10 Max. 5.5 1 − 1000 Unit V mA kΩ nF 18 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 3.6. Characteristics at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 5 V. Symbol IDD VDDZ VOZ Parameter Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Resolution INL ER Non-Linearity of Output Voltage over Temperature Ratiometric Error of Output over Temperature (Error in VOUT / VDD) Ratiometricy of Output over Temperature V OUT ( V DD ) V OUT ( V DD = 5 V ) = ---------------------------- ⁄ --------------------------------------------V DD 5V ΔTK ΔVOUTCL Variation of Linear Temperature Coefficient Accuracy of Output Voltage at Clamping Low Voltage over Temperature Range Accuracy of Output Voltage at Clamping High Voltage over Temperature Range Output High Voltage Output Low Voltage Internal ADC Frequency over Temperature Range Response Time of Output Pin No. 1 1 3 3 3 3 Min. − − − − −0.5 −0.5 Typ. 7 17.5 17 12 0 0 Max. 10 20 19.5 − 0.5 0.5 Unit mA V V bit % % IDD = 25 mA, TJ = 25 °C, t = 20 ms IO = 10 mA, TJ = 25 °C, t = 20 ms ratiometric to VDD 1) % of supply voltage2) ⎥ VOUT1 - VOUT2⎥ > 2 V during calibration procedure ⎥ VOUT1 - VOUT2⎥ > 2 V during calibration procedure Conditions 3 99.5 100 100.5 % 3 3 −400 −45 0 0 400 45 ppm/k mV if TC and TCSQ suitable for the application RL = 4.7 kΩ, VDD = 5 V ΔVOUTCH 3 −45 0 45 mV RL = 4.7 kΩ, VDD = 5 V VOUTH VOUTL fADC tr(O) 3 3 − 3 4.65 4.8 0.2 0.35 150 10 8 4 2 V V kHz ms ms ms ms VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA VDD = 4.5 V to 8.5 V 3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 160 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz CL = 10 nF, time from 10% to 90% of final output voltage for a steplike signal Bstep from 0 mT to Bmax CL = 10 nF 3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 160 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz CL = 10 nF, 90% of VOUT BAC < 10 mT; 3 dB Filter frequency = 2 kHz magnetic range = 90 mT3) 3 dB Filter frequency = 80 Hz Sensitivity ≤ 0.26 110 − 128 5 4 2 1 td(O) tPOD Delay Time of Output Power-Up Time (Time to reach stabilized Output Voltage) 3 − − − 0.1 6 5 3 2 2 3 0.5 11 9 5 3 − 6 ms ms ms ms ms kHz mV BW VOUTn Small Signal Bandwidth (−3 dB) Noise Output Voltagepp 3 3 − − 1) 2) 3) Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096 if more than 50% of the selected magnetic field range are used and the temperature compensation is suitable peak-to-peak value exceeded: 5% Micronas Feb. 7, 2006; 6251-537-3DS 19 HAL 815 DATA SHEET Symbol ROUT RthJA TO92UT-1, TO92UT-2 Parameter Output Resistance over Recommended Operating Range Thermal Resistance Junction to Soldering Point Pin No. 3 − Min. − − Typ. 1 150 Max. 10 200 Unit Ω K/W Conditions VOUTLmax ≤ VOUT ≤ VOUTHmin 3.7. Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 5 V. Symbol BOffset ΔBOffset/ΔT Parameter Magnetic Offset Magnetic Offset Change due to TJ Pin No. 3 Min. −0.5 −10 Typ. 0 0 Max. 0.5 10 Unit mT μT/K Test Conditions B = 0 mT, IOUT = 0 mA, TJ = 25 °C, unadjusted sensor B = 0 mT, IOUT = 0 mA 3.8. Open-Circuit Detection at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after locking the sensor Symbol VOUT VOUT Parameter Output voltage at open VDD line Output voltage at open GND line Pin No. 3 3 Min. 0 4.7 Typ. 0 4.8 Max. 0.2 5 Unit V V Test Conditions VDD = 5 V RL = 10 kΩ to GND VDD = 5 V RL = 10 kΩ to GND 3.9. Overvoltage and Undervoltage Detection at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C Symbol VDD,UV VDD,OV 1) Parameter Undervoltage detection level Overvoltage detection level Pin No. 1 1 Min. 3.2 8.5 Typ. 3.7 8.9 Max. 4.1 10.0 Unit V V Test Conditions 1) 1) If the supply voltage drops below VDD,UV or rises above VDD,OV, the output voltage is switched to VDD (≥94% of VDD at RL = 10 kΩ to GND). The CLAMP-LOW register has to be set to a voltage ≥ 200 mV Please note: The over- and undervoltage detection is activated only after locking the sensor! 20 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 3.10. Typical Characteristics mA 20 15 IDD 10 5 0 -5 −10 −15 −20 −15 −10 TA = −40 °C TA = 25 °C TA = 150 °C IDD mA 10 TA = 25 °C VDD = 5 V 8 6 4 2 −5 0 5 10 VDD 15 20 V 0 −1.5 −1.0 −0.5 0.0 0.5 1.0 1.5 mA IOUT Fig. 3–5: Typical current consumption versus supply voltage Fig. 3–7: Typical current consumption versus output current mA 10 VDD = 5 V dB 5 0 IDD 8 VOUT –3 –5 –10 6 –15 –20 4 –25 −30 –35 0 −50 –40 10 Filter: 80 Hz Filter: 160 Hz Filter: 500 Hz Filter: 2 kHz 2 0 50 100 150 TA 200 °C 100 1000 fsignal 10000 Hz Fig. 3–6: Typical current consumption versus ambient temperature Fig. 3–8: Typical output voltage versus signal frequency Micronas Feb. 7, 2006; 6251-537-3DS 21 HAL 815 DATA SHEET % 1.0 0.8 ER 0.6 0.4 0.2 0.0 −0.2 −0.4 −0.6 −0.8 −1.0 BOffset mT 1.0 0.8 0.6 0.4 0.2 0.0 −0.2 −0.4 −0.6 −0.8 −1.0 −50 200 °C TC = 16, TCSQ = 18 TC = 0, TCSQ = 12 TC = −20, TCSQ = 12 VOUT/VDD = 0.82 VOUT/VDD = 0.66 VOUT/VDD = 0.5 VOUT/VDD = 0.34 VOUT/VDD = 0.18 4 5 6 7 VDD 8V 0 50 100 TA 150 Fig. 3–9: Typical ratiometric error versus supply voltage Fig. 3–11: Typical magnetic offset versus ambient temperature % 120 % 1.0 0.8 100 1/sensitivity 80 INL 0.6 0.4 0.2 60 0.0 −0.2 40 TC = 16, TCSQ = 8 TC = 0, TCSQ = 12 20 TC = −20, TCSQ = 12 TC = −31, TCSQ = 0 0 −50 0 50 100 150 TA 200 °C −0.4 −0.6 −0.8 −1.0 −40 −20 Range = 30 mT 0 20 B 40 mT Fig. 3–10: Typical 1/sensitivity versus ambient temperature Fig. 3–12: Typical nonlinearity versus magnetic field 22 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 4.3. Temperature Compensation The relationship between the temperature coefficient of the magnet and the corresponding TC and TCSQ codes for linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table. Please contact Micronas for more detailed information on this higher order temperature compensation. The HAL805, HAL810, and HAL815 contain the same temperature compensation circuits. If an optimal setting for the HAL805/HAL810 is already available, the same settings may be used for the HAL815. 4. Application Notes 4.1. Application Circuit For EMC protection, it is recommended to connect one ceramic 4.7 nF capacitor each between ground and the supply voltage, respectively the output voltage pin. In addition, the input of the controller unit should be pulled-down with a 4.7 kOhm resistor and a ceramic 4.7 nF capacitor. Please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12.5 V for 100 ms. All components connected to the VDD line at this time must be able to resist this voltage. VDD Temperature Coefficient of Magnet (ppm/K) OUT HAL815 4.7 nF 4.7 nF GND 4.7 nF 4.7 kΩ μC TC TCSQ 400 300 200 100 0 31 28 24 21 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 6 7 8 9 10 10 11 11 11 12 12 12 13 13 13 13 14 14 14 14 15 15 Fig. 4–1: Recommended application circuit 4.2. Use of two HAL815 in Parallel Two different HAL815 sensors which are operated in parallel to the same supply and ground line can be programmed individually. In order to select the IC which should be programmed, both Hall ICs are inactivated by the “Deactivate” command on the common supply line. Then, the appropriate IC is activated by an “Activate” pulse on its output. Only the activated sensor will react to all following read, write, and program commands. If the second IC has to be programmed, the “Deactivate” command is sent again, and the second IC can be selected. −50 −90 −130 −170 −200 −240 −280 −320 −360 VDD OUT A & Select A −410 −450 −500 −550 −600 10 nF HAL 815 Sensor A 4.7 nF HAL 815 Sensor B OUT B & Select B 4.7 nF GND −650 −700 −750 Fig. 4–2: Parallel operation of two HAL815 Micronas Feb. 7, 2006; 6251-537-3DS 23 HAL 815 4.4. Ambient Temperature DATA SHEET Temperature Coefficient of Magnet (ppm/K) −810 −860 −910 −960 −1020 −1070 −1120 −1180 −1250 −1320 −1380 −1430 −1500 −1570 −1640 −1710 −1780 −1870 −1950 −2030 −2100 −2180 −2270 −2420 −2500 −2600 −2700 −2800 −2900 −3000 −3100 TC TCSQ 0 −1 −2 −3 −4 −5 −6 −7 −8 −9 −10 −11 −12 −13 −14 −15 −16 −17 −18 −19 −20 −21 −22 −24 −25 −26 −27 −28 −29 −30 −31 15 16 16 16 17 17 17 18 18 19 19 20 20 20 Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + ΔT At static conditions and continuous operation, the following equation applies: ΔT = IDD * VDD * RthJA For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For VDD = 5.5 V, Rth = 200 K/W and IDD = 10 mA the temperature difference ΔT = 11 K. For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax −ΔT 4.5. EMC and ESD 21 21 22 22 23 23 24 24 25 26 27 27 28 28 29 30 31 Please contact Micronas for the detailed investigation reports with the EMC and ESD results. For applications with disturbances by capacitive or inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4–1 is recommended. Applications with this arrangement passed the EMC tests according to the product standards ISO 7637 part 3 (Electrical transient transmission by capacitive or inductive coupling) and part 4 (Radiated disturbances). The HAL815 is designed for a stabilized 5 V supply. Interferences and disturbances conducted along the 12 V onboard system (product standard ISO 7637 part 1) are not relevant for these applications. 24 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 – Read a register (see Fig. 5–3) After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. – Programming the EEPROM cells (see Fig. 5–4) After evaluating this command, the sensor answers with the Acknowledge Bit. After the delay time tw, the supply voltage rises up to the programming voltage. – Activate a sensor (see Fig. 5–5) If more than one sensor is connected to the supply line, selection can be done by first deactivating all sensors. The output of all sensors will be pulled to ground by the internal 10 kΩ resistors. With an Activate pulse on the appropriate output pin, an individual sensor can be selected. All following commands will only be accepted from the activated sensor. 5. Programming of the Sensor 5.1. Definition of Programming Pulses The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a serial telegram on the output pin. The bits in the serial telegram have a different bit time for the VDD-line and the output. The bit time for the VDD-line is defined through the length of the Sync Bit at the beginning of each telegram. The bit time for the output is defined through the Acknowledge Bit. A logical “0” is coded as no voltage change within the bit time. A logical “1” is coded as a voltage change between 50% and 80% of the bit time. After each bit, a voltage change occurs. 5.2. Definition of the Telegram VDDH tr tp0 VDDL tf tp0 Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). There are 4 kinds of telegrams: – Write a register (see Fig. 5–2) After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the command has been processed, the sensor answers with an Acknowledge Bit (logical 0) on the output. logical 0 or VDDH logical 1 VDDL tp1 tp0 or tp1 tp0 Fig. 5–1: Definition of logical 0 and 1 bit Table 5–1: Telegram parameters Symbol VDDL VDDH tr tf tp0 tpOUT tp1 VDDPROG tPROG trp Parameter Supply Voltage for Low Level during Programming Supply Voltage for High Level during Programming Rise time Fall time Bit time on VDD Bit time on output pin Voltage Change for logical 1 Supply Voltage for Programming the EEPROM Programming Time for EEPROM Rise time of programming voltage Pin 1 1 1 1 1 3 1, 3 1 1 1 1.7 2 50 12.4 95 0.2 1.75 3 65 12.5 100 0.5 Min. 5 6.8 Typ. 5.6 8.0 Max. 6 8.5 0.05 0.05 1.8 4 80 12.6 105 1 Unit V V ms ms ms ms % V ms ms tp0 is defined through the Sync Bit tpOUT is defined through the Acknowledge Bit % of tp0 or tpOUT Remarks Micronas Feb. 7, 2006; 6251-537-3DS 25 HAL 815 Table 5–1: Telegram parameters, continued Symbol tfp tw Vact tact Parameter Fall time of programming voltage Delay time of programming voltage after Acknowledge Voltage for an Activate pulse Duration of an Activate pulse Pin 1 1 3 3 Min. 0 0.5 3 0.05 0.7 4 0.1 Typ. Max. 1 1 5 0.2 Unit ms ms V ms Remarks DATA SHEET WRITE Sync VDD Acknowledge VOUT COM CP ADR AP DAT DP Fig. 5–2: Telegram for coding a Write command READ Sync VDD Acknowledge VOUT DAT DP COM CP ADR AP Fig. 5–3: Telegram for coding a Read command trp VDDPROG ERASE, PROM, and LOCK Sync VDD Acknowledge VOUT tw COM CP ADR AP tPROG tfp Fig. 5–4: Telegram for coding the EEPROM programming VACT VOUT tr tACT tf Fig. 5–5: Activate pulse 26 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 Data Bits (DAT) The 14 Data Bits contain the register information. 5.3. Telegram Codes Sync Bit Each telegram starts with the Sync Bit. This logical “0” pulse defines the exact timing for tp0. Command Bits (COM) The Command code contains 3 bits and is a binary number. Table 5–2 shows the available commands and the corresponding codes for the HAL815. The registers use different number formats for the Data Bits. These formats are explained in Section 5.4. In the Write command, the last bits are valid. If, for example, the TC register (6 bits) is written, only the last 6 bits are valid. In the Read command, the first bits are valid. If, for example, the TC register (6 bits) is read, only the first 6 bits are valid. Command Parity Bit (CP) This parity bit is “1” if the number of zeros within the 3 Command Bits is uneven. The parity bit is “0”, if the number of zeros is even. Data Parity Bit (DP) This parity bit is “1” if the number of zeros within the binary number is even. The parity bit is “0” if the number of zeros is uneven. Address Bits (ADR) The Address code contains 4 bits and is a binary number. Table 5–3 shows the available addresses for the HAL815 registers. Acknowledge After each telegram, the output answers with the Acknowledge signal. This logical “0” pulse defines the exact timing for tpOUT. Address Parity Bit (AP) This parity bit is “1” if the number of zeros within the 4 Address bits is uneven. The parity bit is “0” if the number of zeros is even. Table 5–2: Available commands Command READ WRITE PROM ERASE LOCK Code 2 3 4 5 7 Explanation read a register write a register program all nonvolatile registers (except the lock bits) erase all nonvolatile registers (except the lock bits) lock the whole device and switch permanently to the analog-mode Micronas Feb. 7, 2006; 6251-537-3DS 27 HAL 815 5.4. Number Formats Two-complementary number: DATA SHEET Binary number: The most significant bit is given as first, the least significant bit as last digit. Example: 101001 represents 41 decimal. The first digit of positive numbers is “0”, the rest of the number is a binary number. Negative numbers start with “1”. In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add “1”. Example: 0101001 represents +41 decimal 1010111 represents −41 decimal Signed binary number: The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example: 0101001 represents +41 decimal 1101001 represents −41 decimal Table 5–3: Available register addresses Register CLAMP-LOW CLAMP-HIGH VOQ SENSITIVITY MODE LOCKR ADC-READOUT TC TCSQ DEACTIVATE Code 1 2 3 4 5 6 7 11 12 15 Data Bits 10 11 11 14 6 1 14 6 5 12 Format binary binary two compl. binary signed binary binary binary two compl. binary signed binary binary binary Customer read/write/program read/write/program read/write/program read/write/program read/write/program lock read read/write/program read/write/program write Deactivate the sensor Range and filter settings Lock Bit Remark Low clamping voltage High clamping voltage Micronas registers (read only for customers) Register OFFSET FOSCAD SPECIAL Code 8 9 13 Data Bits 5 5 8 Format two compl. binary binary Remark ADC offset adjustment Oscillator frequency adjustment special settings 28 Feb. 7, 2006; 6251-537-3DS Micronas DATA SHEET HAL 815 ADC-READOUT – This register is read only. – The register range is from −8192 up to 8191. DEACTIVATE * 2048 5.5. Register Information CLAMP-LOW – The register range is from 0 up to 1023. – The register value is calculated by: CLAMP-LOW = Low Clamping Voltage VDD – This register can only be written. – The register has to be written with 2063 decimal (80F hexadecimal) for the deactivation. – The sensor can be reset with an Activate pulse on the output pin or by switching off and on the supply voltage. CLAMP-HIGH – The register range is from 0 up to 2047. – The register value is calculated by: CLAMP-HIGH = High Clamping Voltage VDD 5.6. Programming Information * 2048 VOQ – The register range is from −1024 up to 1023. – The register value is calculated by: VOQ = VOQ VDD * 1024 If the content of any register (except the lock registers) is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM. Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and PROM commands is not important. ERASE and PROM act on all registers in parallel. If all HAL815 registers are to be changed, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end. During all communication sequences, the customer has to check if the communication with the sensor was successful. This means that the acknowledge and the parity bits sent by the sensor have to be checked by the customer. If the Micronas programmer board is used, the customer has to check the error flags sent from the programmer board. SENSITIVITY – The register range is from −8192 up to 8191. – The register value is calculated by: SENSITIVITY = Sensitivity * 2048 TC and TCSQ – The TC register range is from −31 up to 31. – The TCSQ register range is from 0 up to 31. Please refer Section 4.2. on page 23 for the recommended values. MODE – The register range is from 0 up to 63 and contains the settings for FILTER and RANGE: MODE = FILTER * 8 + RANGE Note: For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment and programming of HAL815. The LOCK function is active after the next power-up of the sensor. Micronas also recommends sending an additional ERASE command after sending the LOCK command. The success of the Lock Process should be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. Electrostatic Discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. Please refer Section 2.2. on page 8 for the available FILTER and RANGE values. Micronas Feb. 7, 2006; 6251-537-3DS 29 HAL 815 6. Data Sheet History 1. Data Sheet: “HAL 815 Programmable Linear Hall Effect Sensor”, Aug. 16, 2002, 6251-537-1DS. First release of the data sheet. 2. Data Sheet: “HAL 815 Programmable Linear Hall Effect Sensor”, June 24, 2004, 6251-537-2DS. Second release of the data sheet. Major changes: – new package diagram for TO92UT-1 – package diagram for TO92UT-2 added – ammopack diagrams for TO92UT-1/-2 added 3. Data Sheet: “HAL 815 Programmable Linear Hall Effect Sensor”, Feb. 7, 2006, 6251-537-3DS. Third release of the data sheet. Major changes: – characteristics updated DATA SHEET Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com 30 Feb. 7, 2006; 6251-537-3DS Micronas