HAL825UT-A

Hardware Documentation Data Sheet HAL 82x High-Precision Programmable Linear Hall-Effect Sensor Family ® Edition Feb. 3, 2009 DSH000143_003EN HAL82x Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks – HAL DATA SHEET Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Sensor programming with VDD-Modulation protected by Micronas Patent No. EP 0 953 848. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x Contents Page 4 4 4 5 5 5 5 5 6 6 8 11 11 13 13 17 17 17 18 18 19 20 21 22 22 22 23 23 23 23 24 24 25 25 25 27 28 28 31 32 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. 2. 2.1. 2.2. 2.3. 2.3.1. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.6.1. 3.7. 3.8. 3.9. 3.10. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.5.1. 6. Title Introduction Major Applications Features Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability and Welding Pin Connections and Short Descriptions Functional Description General Function Digital Signal Processing and EEPROM Calibration Procedure General Procedure Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Definition of Sensitivity Error ES Open-Circuit Detection Power-On Operation Overvoltage and Undervoltage Detection Magnetic Characteristics Application Notes Application Circuit Use of two HAL82x in Parallel Temperature Compensation Ambient Temperature EMC and ESD Programming of the Sensor Definition of Programming Pulses Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information Data Sheet History Micronas Feb. 3, 2009; DSH000143_003EN 3 HAL82x High-Precision Programmable Linear Hall-Effect Sensor Family Release Note: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL82x is a new member of the Micronas family of programmable linear Hall sensors. As an extension to the HAL 8x5, it offers an improved temperature performance, enhanced wiring failure detection and a 14bit multiplexed analog data output. It is possible to program different sensors which are in parallel to the same supply voltage individually. The HAL82x is an universal magnetic field sensor with a linear output based on the Hall effect. The IC can be used for angle or distance measurements if combined with a rotating or moving magnet. The major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at B = 0 mT), and output voltage range are programmable in a non-volatile memory. The sensor has a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the supply voltage. The HAL82x features a temperature-compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with redundancy and lock function for the calibration data, an EEPROM for customer serial number, a serial interface for programming the EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the sensor accuracy. The HAL82x is programmable by modulating the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output voltage directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. This offers a low-cost alternative for all applications that presently need mechanical adjustment or laser trimming for calibrating the system. In addition, the temperature compensation of the Hall IC can be fit to common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high accuracy. DATA SHEET The calculation of the individual sensor characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. The sensor is designed for hostile industrial and automotive applications and operates with typically 5 V supply voltage in the ambient temperature range from −40 °C up to 150 °C. The HAL 82x is available in the very small leaded packages TO92UT-1 and TO92UT-2. 1.1. Major Applications Due to the sensor’s versatile programming characteristics and low temperature drifts, the HAL82x is the optimal system solution for applications such as: – contactless potentiometers, – angle sensors (like throttle position, paddle position and EGR applications), – distance measurements, – magnetic field and current measurement. 1.2. Features – high-precision linear Hall effect sensor with ratiometric output and digital signal processing – Low output voltage drifts over temperature – 12-bit analog output and 14-bit multiplex analog output – multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function – open-circuit (ground and supply line break detection) with 5 kΩ pull-up and pull-down resistor, overvoltage and undervoltage detection – for programming an individual sensor within several sensors in parallel to the same supply voltage, a selection can be done via the output pin – temperature characteristics are programmable for matching common magnetic materials – programmable clamping function – programming through a modulation of the supply voltage – operates from −40 °C up to 150 °C ambient temperature – operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V – operates with static magnetic fields and dynamic magnetic fields up to 1 kHz 4 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x 1.6. Solderability and Welding Solderability During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. – overvoltage and reverse-voltage protection at all pins – magnetic characteristics extremely robust against mechanical stress – short-circuit protected push-pull output – EMC and ESD optimized design 1.3. Marking Code The HAL82x has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type A HAL824 HAL825 824A 825A Temperature Range K 824K 825K Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.7. Pin Connections and Short Descriptions Pin No. 1 2 3 Pin Name VDD GND OUT OUT Type IN Short Description Supply Voltage and Programming Pin Ground Push Pull Output and Selection Pin 1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = −40 °C to +170 °C K: TJ = −40 °C to +140 °C The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.4. on page 24. 1 VDD 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A and K Package: UT for TO92UT-1/-2 Type: 824 or 825 2 GND 3 OUT Example: HAL825UT-K → Type: 825 → Package: TO92UT → Temperature Range: TJ = −40 °C to +140 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. Fig. 1–1: Pin configuration Micronas Feb. 3, 2009; DSH000143_003EN 5 HAL82x 2. Functional Description 2.1. General Function The HAL82x is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the supply voltage (ratiometric behavior). The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers, converted to an analog voltage with ratiometric behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP are explained in Section 2.2. on page 8. The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset. VDD (V) DATA SHEET analog output is switched off during the communication. Several sensors in parallel to the same supply and ground line can be programmed individually. The selection of each sensor is done via its output pin. The open-circuit detection provides a defined output voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant and nonredundant EEPROM cells. The non-redundant EEPROM cells are only used to store production information inside the sensor. In addition, the sensor IC is equipped with devices for overvoltage and reversevoltage protection at all pins. HAL 82x 8 7 6 5 VDD VOUT (V) As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2–1). In the supply voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The VDD GND OUT digital analog Fig. 2–1: Programming with VDD modulation VDD Internally stabilized Supply and Protection Devices Temperature Dependent Bias Oscillator Open-circuit, Overvoltage, Undervoltage Detection Protection Devices Switched Hall Plate A/D Converter Digital Signal Processing D/A Converter Analog Output 50 Ω 50 Ω OUT EEPROM Memory Supply Level Detection Lock Control GND Digital Output Open-circuit Detection Fig. 2–2: HAL82x block diagram 6 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x Digital Output Digital Signal Processing 14 bit A/D Converter Digital Filter Multiplier Adder Limiter D/A Converter TC 5 bit TCSQ 3 bit Mode Register Filter Range 2 bit 1 bit Other: 5 bit Sensitivity 14 bit VOQ 11 bit Min-Out 8 bit Max-Out 9 bit Lock 1 bit Micronas Register TC Range Select 2 bit EEPROM Memory Lock Control Fig. 2–3: Details of EEPROM and Digital Signal Processing Micronas Feb. 3, 2009; DSH000143_003EN 7 HAL82x 2.2. Digital Signal Processing and EEPROM The DSP is the main part of this sensor and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2–3. Terminology: SENSITIVITY: name of the register or register value Sensitivity: name of the parameter DATA SHEET converter offset compensation, and several other special settings. An external magnetic field generates a Hall voltage on the Hall plate. The ADC converts the amplified positive or negative Hall voltage (operates with magnetic north and south poles at the branded side of the package) to a digital value. The digital signal is filtered in the internal low-pass filter and manipulated according to the settings stored in the EEPROM. The digital value after signal processing is readable in the D/A-READOUT register. Depending on the programmable magnetic range of the Hall IC, the operating range of the A/D converter is from −30 mT...+30 mT up to −100 mT...+100 mT. During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent output voltage and limited according to the clamping voltage. The result is converted to an analog signal and stabilized by a push-pull output transistor stage. The D/A-READOUT at any given magnetic field depends on the programmed magnetic field range, the low-pass filter, TC values and CLAMP-LOW and CLAMP-HIGH. The D/A-READOUT range is min. 0 and max. 16383. The EEPROM registers consist of four groups: Group 1 contains the registers for the adaption of the sensor to the magnetic system: MODE for selecting the magnetic field range and filter frequency, TC, TCSQ and TC-Range for the temperature characteristics of the magnetic sensitivity. Group 2 contains the registers for defining the output characteristics: SENSITIVITY, VOQ, CLAMP-LOW, and CLAMP-HIGH. The output characteristic of the sensor is defined by these 4 parameters. – The parameter VOQ (Output Quiescent Voltage) corresponds to the output voltage at B = 0 mT. – The parameter Sensitivity defines the magnetic sensitivity: ΔV OUT S ensitivity = ---------------ΔB Note: During application design, it should be taken into consideration that the maximum and minimum D/A-READOUT should not saturate in the operational range of the specific application. – The output voltage can be calculated as: Range The RANGE bits are bit 2 and 3 of the MODE register; they define the magnetic field range of the A/D converter. Magnetic Field Range −30 mT...30 mT −60 mT...60 mT −80 mT...80 mT −100 mT...100 mT RANGE 0 1 2 3 VOUT ∼ Sensitivity × B + V OQ The output voltage range can be clamped by setting the registers CLAMP-LOW and CLAMP-HIGH in order to enable failure detection (such as short-circuits to VDD or GND and open connections). Group 3 contains the general purpose register GP. The GP Register can be used to store customer information, like a serial number after manufacturing. Micronas will use this GP REGISTER to store informations like, Lot number, wafer number, x and y position of the die on the wafer, etc. This information can be readout by the customer and stored in it’s on data base or it can stay in the sensor as is. Group 4 contains the Micronas registers and LOCK for the locking of all registers. The Micronas registers are programmed and locked during production. These registers are used for oscillator frequency trimming, A/D 8 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x Filter The FILTER bit is bit number 4 of the MODE register; it defines the −3 dB frequency of the digital low pass filter. −3 dB Frequency 500 Hz 1 kHz FILTER 0 1 Note: Please contact Micronas for further information about Multiplex Analog Output Mode. In Burn-In Mode, the signal path of the sensors DSP is stimulated internally without applied magnetic field. In this mode, the sensor provides a “saw tooth” shape output signal. Shape and frequency of the saw tooth signal depends on the programming of the sensor. This mode can be used for Burn-In test in the customers production line. Bit Time The BITTIME bit is bit number 5 of the MODE register; It defines the protocol bit time for the communication between the sensor and the programmer board. Bit Time 1:64 (Typ. 1.75 ms) 1:128 (Typ. 3.5 ms) BITTIME 1 0 TC Register The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaption is done by programming the TC (Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the output voltage characteristic can be fixed over the full temperature range. The sensor can compensate for linear temperature coefficients ranging from about −3100 ppm/K up to 1000 ppm/K and quadratic coefficients from about −7 ppm/K² to 2 ppm/K². The full TC range is separated in the following four ranges: TC-Range [ppm/k] −3100 to −1800 −1750 to −550 −500 to +450 (default value) +450 to +1000 GROUP 0 2 1 3 Output Format The OUTPUTMODE bits are the bits number 6 to 7 of the MODE register; They define the different output modes. Output Format Analog Output (12 bit) Internal Burn-In Mode Multiplex Analog Output (external trigger) OUTPUTMODE 0 2 − In Analog Output mode, the sensor provides an ratiometric 12-bit analog output voltage between 0 V and 5 V. In Multiplex Analog Output mode, the sensor transmits the LSN and MSN of the output value separately. This enables the sensor to transmit a 14-bit signal. In external trigger mode the ECU can switch the output of the sensor between LSN and MSN by changing current flow direction through sensor output. In case the output is pulled up by a 10 kΩ resistor the sensor sends the MSN. If the output is pulled down the sensor will send the LSN. Maximum refresh rate is about 500 Hz (2 ms). Three pins are sufficient. TC (5 bit) and TCSQ (3 bit) have to be selected individually within each of the four ranges. For example: 0 ppm/k requires TC-Range = 1, TC = 15 and TCSQ = 1. Micronas Feb. 3, 2009; DSH000143_003EN 9 HAL82x Sensitivity The SENSITIVITY register contains the parameter for the multiplier in the DSP. The Sensitivity is programmable between −4 and 4. For VDD = 5 V, the register can be changed in steps of 0.00049. For all calculations, the digital value from the magnetic field of the D/A converter is used. This digital information is readable from the D/A-READOUT register. GP Register DATA SHEET This register can be used to store some information, like production date or customer serial number. Micronas will store production Lot number, wafer number and x,y coordinates in three blocks of this registers. The total register contains of four blocks with a length of 13 bit each. The customer can read out this information and store it in his own production data base for reference or he can change them and store own production information. ΔV out × 16384 SENSITIVITY = -------------------------------------------------------2 ⋅ ΔDA-Readout ⋅ VDD Note: To enable programming of the GP register bit 0 of the MODE register has to be set to 1. This register is not a guarantee for trace-ability. VOQ The VOQ register contains the parameter for the adder in the DSP. VOQ is the output voltage without external magnetic field (B = 0 mT) and programmable from −VDD up to VDD. For VDD = 5 V, the register can be changed in steps of 4.9 mV. LOCKR By setting the first bit of this 2-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. This bit is active after the first power-off and power-on sequence after setting the LOCK bit. Note: If VOQ is programmed to a negative voltage, the maximum output voltage is limited to: Warning: This register cannot be reset! VOUTmax = VOQ + V DD D/A-READOUT This 14-bit register delivers the actual digital value of the applied magnetic field after the signal processing. This register can be read out and is the basis for the calibration procedure of the sensor in the system environment. Clamping Voltage The output voltage range can be clamped in order to detect failures like shorts to VDD or GND or an open circuit. The CLAMP-LOW register contains the parameter for the lower limit. The lower clamping voltage is programmable between 0 V and VDD/2. For VDD = 5 V, the register can be changed in steps of 9.77 mV. The CLAMP-HIGH register contains the parameter for the upper limit. The upper clamping voltage is programmable between 0 V and VDD. For VDD = 5 V, in steps of 9.77 mV. Note: The MSB and LSB are reversed compared with all the other registers. Please reverse this register after readout. 10 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x Step 3: Define Calibration Points The calibration points 1 and 2 can be set inside the specified range. The corresponding values for VOUT1 and VOUT2 result from the application requirements. 2.3. Calibration Procedure 2.3.1. General Procedure For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming (Programmer Board Version 5.1) and the corresponding software (PC824 and PC825) for the input of the register values. For the individual calibration of each sensor in the customer application, a two point adjustment is recommended. The calibration shall be done as follows: Lowclampingvoltage ≤ VOUT 1,2 ≤ Highclampingvoltage Step 1: Input of the registers which need not be adjusted individually The magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, the output mode and the GP Register value are given for this application. Therefore, the values of the following registers should be identical for all sensors of the customer application. – FILTER (according to the maximum signal frequency) – RANGE (according to the maximum magnetic field at the sensor position) – OUTPUTMODE – TC, TCSQ and TC-RANGE (depends on the material of the magnet and the other temperature dependencies of the application) – GP (if the customer wants to store own production information. It is not necessary to change this register) As the clamping voltages are given. They have an influence on the D/A-Readout value and have to be set therefore after the adjustment process. Write the appropriate settings into the HAL82x registers. For highest accuracy of the sensor, calibration points near the minimum and maximum input signal are recommended. The difference of the output voltage between calibration point 1 and calibration point 2 should be more than 3.5 V. Step 4: Calculation of VOQ and Sensitivity Set the system to calibration point 1 and read the register D/A-READOUT. The result is the value D/AREADOUT1. Now, set the system to calibration point 2, read the register D/A-READOUT again, and get the value D/AREADOUT2. With these values and the target values VOUT1 and VOUT2, for the calibration points 1 and 2, respectively, the values for Sensitivity and VOQ are calculated as: 1 ( Vout 2 – Vout 1 ) 16384 Sensitivity = -- × -------------------------------------------------------------------------------- × -------------2 ( D/A-Readout2 – D/A-Readout1 ) 5 1 Vout 2 × 16384 V OQ = ----- × ------------------------------------ – 16 5 5 [ ( D/A-Readout2 – 8192 ) × Sensitivity × 2 ] × ----------1024 Step 2: Initialize DSP As the D/A-READOUT register value depends on the settings of SENSITIVITY, VOQ and CLAMPLOW/HIGH, these registers have to be initialized with defined values, first: – VOQINITIAL = 2.5 V – SensitivityINITIAL = 0.5 – Clamp-Low = 0 V – Clamp-High = 4.999 V This calculation has to be done individually for each sensor. Next, write the calculated values for Sensitivity and VOQ into the IC for adjusting the sensor. At that time it is also possible to store the application specific values for Clamp-Low and Clamp-High into the sensors EEPROM. Micronas Feb. 3, 2009; DSH000143_003EN 11 HAL82x The sensor is now calibrated for the customer application. However, the programming can be changed again and again if necessary. DATA SHEET Note: For a recalibration, the calibration procedure has to be started at the beginning (step 1). A new initialization is necessary, as the initial values from step 1 are overwritten in step 4. Step 5: Locking the Sensor The last step is activating the LOCK function by programming the LOCK bit. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands. Warning: This register can not be reset! 12 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x 3. Specifications 3.1. Outline Dimensions Fig. 3–1: TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread Weight approximately 0.12 g Micronas Feb. 3, 2009; DSH000143_003EN 13 HAL82x DATA SHEET Fig. 3–2: TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g 14 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x Fig. 3–3: TO92UT-2: Dimensions ammopack inline, not spread Micronas Feb. 3, 2009; DSH000143_003EN 15 HAL82x DATA SHEET Fig. 3–4: TO92UT-1: Dimensions ammopack inline, spread 16 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x 3.2. Dimensions of Sensitive Area 0.25 mm x 0.25 mm 3.3. Positions of Sensitive Areas TO92UT-1/-2 y A4 Bd 1.5 mm nominal 0.3 mm nominal 0.3 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol VDD VDD −IDD VOUT VOUT − VDD IOUT tSh TJ NPROG 1) 2) 3) 4) 5) Parameter Supply Voltage Supply Voltage Reverse Supply Current Output Voltage Excess of Output Voltage over Supply Voltage Continuous Output Current Output Short Circuit Duration Junction Temperature Range Number of Programming Cycles Pin No. 1 1 1 3 3,1 3 3 Min. −8.5 −14.41) 2) − −55) −55) − −10 − −40 −40 − Max. 8.5 14.41) 2) 501) 8.53) 14.43) 2) 2 10 10 1704) 150 100 Unit V V mA V V mA min °C °C as long as TJmax is not exceeded t < 10 min (VDDmin = −15 V for t < 1 min, VDDmax = 16 V for t < 1 min) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to −14 V) t < 1000h internal protection resistor = 50 Ω Micronas Feb. 3, 2009; DSH000143_003EN 17 HAL82x 3.4.1. Storage and Shelf Life DATA SHEET The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol VDD IOUT RL CL Parameter Supply Voltage Continuous Output Current Load Resistor Load Capacitance Pin No. 1 3 3 3 Min. 4.5 −1 5.0 0.33 Typ. 5 − 10 10 Max. 5.5 1 − 1000 Unit V mA kΩ nF RL: Can be pull-up or pull-down resistor 18 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x 3.6. Characteristics at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 5 V.. Symbol IDD VDDZ VOZ Parameter Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Resolution DNL Differential Non-Linearity of D/A Converter Pin No. 1 1 3 3 3 Min. − − − − −0.9 −2.0 INL Non-Linearity of Output Voltage over Temperature 3 −0.5 Typ. 7 17.5 17 12 0 0 0 Max. 10 20 19.5 − 0.9 2.0 0.5 Unit mA V V bit LSB LSB % IDD = 25 mA, TJ = 25 °C, t = 20 ms IO = 10 mA, TJ = 25 °C, t = 20 ms ratiometric to VDD 1) For HAL824: Only at 25 °C ambient temperature For HAL825: Only at 25 °C ambient temperature % of supply voltage2) For Vout = 0.35 V ... 4.65 V; VDD = 5 V 3 −0.5 0 0.5 % ⎥ VOUT1 - VOUT2⎥ > 2 V during calibration procedure For HAL824: VDD = 5 V; 60 mT range, 3 db frequency = 500 Hz, TC = 15, TCSQ= 1, TC-Range = 1, −0.6 < sensitivity < 0.6 For HAL825: VDD = 5 V; 60 mT range, 3 dB frequency = 500 Hz, TC = 15, TCSQ= 1, TC-Range = 1, −0.6 < sensitivity < 0.6 For HAL824: VDD = 5 V; 60 mT range, 3 db frequency = 500 Hz, TC & TCSQ selection for 0 ppm/k (see Section 3.6.1. on page 20) For HAL824 & HAL825: VDD = 5 V; 60 mT range, 3 db frequency = 500 Hz, TC & TCSQ selection for linearized temperature coefficients in TCRange = 1 (see Section 3.6.1. on page 20) RL = 5 kΩ, VDD = 5 V RL = 5 kΩ, VDD = 5 V VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA Conditions ER Ratiometric Error of Output over Temperature (Error in VOUT / VDD) Offset Drift over Temperature Range ⎥VOUT(B = 0 mT)25°C− VOUT(B = 0 mT)max⎥ Voffset 3 0 0.1 0.2 % VDD 0 0.15 0.25 % VDD ES Error in Magnetic Sensitivity over Temperature Range 3 −1 0 1 % −2 0 2 % ΔVOUTCL ΔVOUTCH VOUTH VOUTL fADC 1) 2) 3) Accuracy of Output Voltage at Clamping Low Voltage over Temperature Range Accuracy of Output Voltage at Clamping High Voltage over Temperature Range Upper Limit of Signal Band3) Lower Limit of Signal Band 3) 3 3 3 3 − −45 −45 4.65 − − 0 0 4.8 0.2 128 45 45 − 0.35 − mV mV V V kHz Internal ADC Frequency over Temperature Range Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096 if more than 50% of the selected magnetic field range is used and the temperature compensation is suitable Signal Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL and above VOUTH Micronas Feb. 3, 2009; DSH000143_003EN 19 HAL82x DATA SHEET Symbol tr(O) Parameter Step Response Time of Output Pin No. 3 Min. − Typ. 3 2 Max. 5 4 Unit ms ms Conditions 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 1 kHz CL = 10 nF, time from 10% to 90% of final output voltage for a step like signal Bstep from 0 mT to Bmax CL = 10 nF CL = 10 nF, 90% of VOUT BAC < 10 mT; 3 dB Filter frequency = 1 kHz magnetic range = 60 mT4) 3 dB Filter frequency = 500 Hz Sensitivity ≤ 0.7; C = 4.7 nF (VDD & VOUT to GND) VOUTLmax ≤ VOUT ≤ VOUTHmin td(O) tPOD BW VOUTn Delay Time of Output Power-Up Time (Time to Reach Stabilized Output Voltage) Small Signal Bandwidth (−3 dB) Noise Output Voltagepp 3 − 3 3 − 1.5 − − 0.1 1.7 1 6 0.5 1.9 − 15 ms ms kHz mV ROUT Output Resistance over Recommended Operating Range 3 − 1 10 Ω TO92UT Packages Thermal Resistance Rthja Rthjc Rthjs Junction to Air Junction to Case Junction to Solder Point value exceeded: 5% − − − − − − − − − 235 61 128 K/W K/W K/W Measured with a 1s0p board Measured with a 1s0p board Measured with a 1s1p board 4)peak-to-peak 3.6.1. Definition of Sensitivity Error ES ES is the maximum of the absolute value of 1 minus the quotient of the normalized measured value1) over the normalized ideal linear2) value: meas ES = max ⎛ abs ⎛ ----------- – 1⎞ ⎞ ⎝ ⎝ ideal ⎠⎠ [ Tmin, Tmax ] −10 In the below example, the maximum error occurs at °C: 1.001 ES = ------------ – 1 = 0.9% 0.992 1) normalized to achieve a least-square-fit straight-line that has a value of 1 at 25 °C 2) normalized to achieve a value of 1 at 25 °C 20 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x ideal 200 ppm/k 1.03 least-square-fit straight-line of normalized measured data relative sensitivity related to 25 °C value 1.02 measurement example of real sensor, normalized to achieve a value of 1 of its least-square-fit straight-line at 25 °C 1.01 1.001 1.00 0.992 0.99 0.98 −50 −25 -10 0 25 50 75 100 temperature [°C] 125 150 175 Fig. 3–5: ES definition example 3.7. Open-Circuit Detection at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after locking the sensor Symbol VOUT Parameter Output Voltage at Open VDD Line Pin No. 3 Min. 0 0 VOUT Output Voltage at Open GND Line 3 4.85 4.8 RL: Can be pull-up or pull-down resistor Typ. 0 0 4.9 4.9 Max. 0.15 0.2 5.0 5.0 Unit V V V V Comment VDD = 5 V RL = 10 kΩ to 200 kΩ VDD = 5 V RL = 5 kΩ to 10 kΩ VDD = 5 V 10 kΩ ≥RL ≤ 200 kΩ VDD = 5 V 5 kΩ ≥ RL < 10 kΩ Micronas Feb. 3, 2009; DSH000143_003EN 21 HAL82x 3.8. Power-On Operation at TJ = −40 °C to +170 °C, after programming and locking. Typical Characteristics for TJ = 25 °C. Symbol PORUP PORDOWN Parameter Power-On Reset Voltage (UP) Power-On Reset Voltage (DOWN) Min. − − DATA SHEET Typ. 3.4 3.0 Max. − − Unit V V 3.9. Overvoltage and Undervoltage Detection at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after programming and locking Symbol VDD,UV VDD,OV 1) Parameter Undervoltage Detection Level Overvoltage Detection Level Pin No. 1 1 Min. − 8.5 Typ. 4.2 8.9 Max. 4.3 10.0 Unit V V Test Conditions 1) 1) If the supply voltage drops below VDD,UV or rises above VDD,OV, the output voltage is switched to VDD (≥97% of VDD at RL = 10 kΩ to GND). The CLAMP-LOW register has to be set to a voltage ≥ 200 mV. Note: The over- and undervoltage detection is activated only after locking the sensor! 3.10. Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 5 V. Symbol BOffset ΔBOffset/ΔT Parameter Magnetic Offset Magnetic Offset Change due to TJ Pin No. 3 Min. −0.5 −10 Typ. 0 0 Max. 0.5 10 Unit mT μT/K Test Conditions B = 0 mT, IOUT = 0 mA, TJ = 25 °C, unadjusted sensor B = 0 mT, IOUT = 0 mA 22 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x 4. Application Notes VDD 4.1. Application Circuit OUT A & Select A For EMC protection, it is recommended to connect one ceramic 4.7 nF capacitor each between ground and the supply voltage, respectively the output voltage pin. In addition, the input of the controller unit should be pulled-down with a 10 kΩ resistor and a ceramic 4.7 nF capacitor. Please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12.5 V for 100 ms. All components connected to the VDD line at this time must be able to resist this voltage. VDD 10 nF HAL82x Sensor A 4.7 nF HAL82x Sensor B OUT B & Select B 4.7 nF GND Fig. 4–2: Parallel operation of two HAL82x 4.3. Temperature Compensation The relationship between the temperature coefficient of the magnet and the corresponding TC, TCSQ and TC-Range codes for linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. For this purpose, other TC, TCSQ and TC-Range combinations are required which are not shown in the table. Please contact Micronas for more detailed information on this higher order temperature compensation. OUT HAL82x 4.7 nF 4.7 nF GND 4.7 nF 10 kΩ μC Fig. 4–1: Recommended application circuit Temperature Coefficient of Magnet (ppm/K) 1075 1000 900 750 675 575 450 400 250 150 50 0 −100 −200 −300 −400 TC-Range TC TCSQ 4.2. Use of two HAL82x in Parallel Two different HAL82x sensors which are operated in parallel to the same supply and ground line can be programmed individually. In order to select the IC which should be programmed, both Hall ICs are inactivated by the “Deactivate” command on the common supply line. Then, the appropriate IC is activated by an “Activate” pulse on its output. Only the activated sensor will react to all following read, write, and program commands. If the second IC has to be programmed, the “Deactivate” command is sent again, and the second IC can be selected. 3 3 3 3 3 3 3 1 1 1 1 1 1 1 1 1 31 28 24 16 12 8 4 31 24 20 16 15 12 8 4 0 7 1 0 2 2 2 2 0 1 1 2 1 0 1 4 7 Note: The multi-programming of two sensors works only if the outputs of the two sensors are pulled to GND with a 10 kΩ pull-down resistor. Micronas Feb. 3, 2009; DSH000143_003EN 23 HAL82x 4.4. Ambient Temperature DATA SHEET Temperature Coefficient of Magnet (ppm/K) −500 −600 −700 −800 −900 −1000 −1100 −1200 −1300 −1400 −1500 −1600 −1700 −1800 −1900 −2000 −2100 −2200 −2400 −2500 −2600 −2800 −2900 −3000 −3100 −3300 −3500 TC-Range TC TCSQ 1 2 2 2 2 2 2 2 2 2 2 2 2 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 31 28 24 20 16 16 12 12 8 4 4 0 31 28 28 24 24 20 16 14 12 8 8 4 4 0 0 2 1 3 6 7 2 5 0 3 7 1 6 6 7 2 6 1 0 5 5 1 6 3 7 1 4 Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = T A + ΔT At static conditions and continuous operation, the following equation applies: ΔT = IDD × V DD × R thJ For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For VDD = 5.5 V, Rth = 235 K/W, and IDD = 10 mA, the temperature difference ΔT = 12.93 K. For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: T Amax = T Lmax – ΔT 4.5. EMC and ESD The HAL82x is designed for a stabilized 5 V supply. Interferences and disturbances conducted along the 12 V on board system (product standard ISO 7637 part 1) are not relevant for these applications. For applications with disturbances by capacitive or inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4–1 is recommended. Applications with this arrangement should pass the EMC tests according to the product standards ISO 7637 part 3 (Electrical transient transmission by capacitive or inductive coupling). Please contact Micronas for the detailed investigation reports with the EMC and ESD results. Note: The above table shows only some approximate values. Micronas recommends to use the TCCalc software to find optimal settings for temperature coefficients. Please contact Micronas for more detailed information. 24 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x – Read a register (see Fig. 5–3) After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. – Programming the EEPROM cells (see Fig. 5–4) After evaluating this command, the sensor answers with the Acknowledge Bit. After the delay time tw, the supply voltage rises up to the programming voltage. – Activate a sensor (see Fig. 5–5) If more than one sensor is connected to the supply line, selection can be done by first deactivating all sensors. The output of all sensors will be pulled to ground by the internal 10 kΩ resistors. With an Activate pulse on the appropriate output pin, an individual sensor can be selected. All following commands will only be accepted from the activated sensor. 5. Programming of the Sensor 5.1. Definition of Programming Pulses The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a serial telegram on the output pin. The bits in the serial telegram have a different bit time for the VDD-line and the output. The bit time for the VDD-line is defined through the length of the Sync Bit at the beginning of each telegram. The bit time for the output is defined through the Acknowledge Bit. A logical “0” is coded as no voltage change within the bit time. A logical “1” is coded as a voltage change between 50% and 80% of the bit time. After each bit, a voltage change occurs. 5.2. Definition of the Telegram VDDH tr tp0 VDDL tf tp0 Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). There are 4 kinds of telegrams: – Write a register (see Fig. 5–2) After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the command has been processed, the sensor answers with an Acknowledge Bit (logical 0) on the output. logical 0 or VDDH logical 1 VDDL tp1 tp0 or tp1 tp0 Fig. 5–1: Definition of logical 0 and 1 bit Table 5–1: Telegram parameters Symbol VDDL VDDH tr tf tp0 tpOUT tp1 VDDPROG tPROG trp Parameter Supply Voltage for Low Level during Programming Supply Voltage for High Level during Programming Rise Time Fall Time Bit Time on VDD Bit Time on Output Pin Voltage Change for Logical 1 Supply Voltage for Programming the EEPROM Programming Time for EEPROM Rise Time of Programming Voltage Pin 1 1 1 1 1 3 1, 3 1 1 1 Min. 5 6.8 Typ. 5.6 8.0 Max. 6 8.5 0.05 0.05 1.8 4 80 12.6 105 1 Unit V V ms ms ms ms % V ms ms tp0 is defined through the Sync Bit tpOUT is defined through the Acknowledge Bit % of tp0 or tpOUT Remarks − − 1.7 2 50 12.4 95 0.2 − − 1.75 3 65 12.5 100 0.5 Micronas Feb. 3, 2009; DSH000143_003EN 25 HAL82x Table 5–1: Telegram parameters, continued Symbol tfp tw Vact tact Vout,deact Parameter Fall Time of Programming Voltage Delay Time of Programming Voltage after Acknowledge Voltage for an Activate Pulse Duration of an Activate Pulse Output Voltage after Deactivate Command Pin 1 1 3 3 3 Min. 0 0.5 3 0.05 0 Typ. Max. 1 1 5 0.2 0.2 Unit ms ms V ms V Remarks DATA SHEET − 0.7 4 0.1 0.1 WRITE Sync VDD Acknowledge VOUT COM CP ADR AP DAT DP Fig. 5–2: Telegram for coding a Write command READ Sync VDD Acknowledge VOUT DAT DP COM CP ADR AP Fig. 5–3: Telegram for coding a Read command trp VDDPROG ERASE and PROM Sync VDD Acknowledge VOUT tw COM CP ADR AP tPROG tfp Fig. 5–4: Telegram for coding the EEPROM programming VACT VOUT tr tACT tf Fig. 5–5: Activate pulse 26 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x Address Parity Bit (AP) This parity bit is “1” if the number of zeros within the 4 Address bits is uneven. The parity bit is “0” if the number of zeros is even. 5.3. Telegram Codes Sync Bit Each telegram starts with the Sync Bit. This logical “0” pulse defines the exact timing for tp0. Data Bits (DAT) Command Bits (COM) The Command code contains 3 bits and is a binary number. Table 5–2 shows the available commands and the corresponding codes for the HAL82x. The 14 Data Bits contain the register information. The registers use different number formats for the Data Bits. These formats are explained in Section 5.4. In the Write command, the last bits are valid. If, for example, the TC register (10 bits) is written, only the last 10 bits are valid. In the Read command, the first bits are valid. If, for example, the TC register (10 bits) is read, only the first 10 bits are valid. Command Parity Bit (CP) This parity bit is “1” if the number of zeros within the 3 Command Bits is uneven. The parity bit is “0”, if the number of zeros is even. Address Bits (ADR) The Address code contains 4 bits and is a binary number. Table 5–3 shows the available addresses for the HAL82x registers. Data Parity Bit (DP) This parity bit is “1” if the number of zeros within the binary number is even. The parity bit is “0” if the number of zeros is uneven. Acknowledge After each telegram, the output answers with the Acknowledge signal. This logical “0” pulse defines the exact timing for tpOUT. Table 5–2: Available commands Command READ WRITE PROM ERASE Code 2 3 4 5 Explanation read a register write a register program all nonvolatile registers (except the lock bits) erase all nonvolatile registers (except the lock bits) Micronas Feb. 3, 2009; DSH000143_003EN 27 HAL82x 5.4. Number Formats VOQ DATA SHEET – The register range is from −1024 up to 1023. Binary number: The most significant bit is given as first, the least significant bit as last digit. Example: 101001 represents 41 decimal. SENSITIVITY – The register range is from −8192 up to 8191. – The register value is calculated by: SENSITIVITY = Sensitivity × 2048 – The register value is calculated by: V OQ VOQ = ---------- × 1024 V DD Signed binary number: The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example: 0101001 represents +41 decimal 1101001 represents −41 decimal Two’s complementary number: The first digit of positive numbers is “0”, the rest of the number is a binary number. Negative numbers start with “1”. In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add “1”. Example: TC – The TC register range is from 0 up to 1023. – The register value is calculated by: TC = GROUP × 256 + TCValue × 8 + TCSQValue 0101001 represents +41 decimal 1010111 represents −41 decimal MODE – The register range is from 0 up to 255 and contains the settings for FILTER and RANGE: 5.5. Register Information CLAMP-LOW – The register range is from 0 up to 255. – The register value is calculated by: LowClampingVoltage × 2 CLAMP-LOW = -------------------------------------------------------------- × 255 V DD MODE = OUTPUTMODE × 32 + BITRATE × 16 + FILTER × 8 + RANGE × 2 + EnableProgGPRegisters D/A-READOUT – This register is read only. – The register range is from 0 up to 16383. CLAMP-HIGH – The register range is from 0 up to 511. – The register value is calculated by: HighClampingVoltage CLAMP-HIGH = ----------------------------------------------------- × 511 V DD DEACTIVATE – This register can only be written. – The register has to be written with 2063 decimal (80F hexadecimal) for the deactivation. – The sensor can be reset with an Activate pulse on the output pin or by switching off and on the supply voltage. 28 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x Table 5–3: Available register addresses Register CLAMP-LOW CLAMP-HIGH VOQ SENSITIVITY MODE LOCKR GP REGISTERS 1..3 Code 1 2 3 4 5 6 8 Data Bits 8 9 11 14 8 2 13 Format binary binary two compl. binary signed binary binary binary binary Customer read/write/program read/write/program read/write/program read/write/program read/write/program read/write/program read/write/program Range, filter, output mode, interface bit time settings Range and filter settings Lock Bit It is only possible to program this register if the mode register bit zero is set to 1. Bit sequence is reversed during read sequence. bit 0 to 2 TCSQ bit 3 to 7 TC bit 7 to 9 TC-RANGE It is only possible to program this register if the mode register bit zero is set to 1. Deactivate the sensor Remark Low clamping voltage High clamping voltage D/A-READOUT TC 9 11 14 10 binary binary read read/write/program GP REGISTER 0 12 13 binary read/write/program DEACTIVATE 15 12 binary write Micronas Feb. 3, 2009; DSH000143_003EN 29 HAL82x DATA SHEET Table 5–4: Data formats Char Register CLAMP LOW CLAMP HIGH VOQ SENSITIVITY MODE LOCKR GP 1..3 Registers D/AREADOUT TC GP 0 Register DEACTIVATE Bit Write Read Write Read Write Read Write Read Write Read Write Read Write Read Read Write Read Write Read Write 15 − − − − − − − − − − − − − − − − − − − − DAT3 14 − − − − − − − − − − − − − − − − − − − − 13 − V − V − V V V − V − V − V V − V − V − 12 − V − V − V V V − V − V V V V − V V V − 11 − V − V − V V V − V − − V V V − V V V 1 DAT2 10 − V − V V V V V − V − − V V V − V V V 0 09 − V − V V V V V − V − − V V V V V V V 0 08 − V V V V V V V − V − − V V V V V V V 0 07 V V V V V V V V V V − − V V V V V V V 0 DAT1 06 V V V V V V V V V V − − V V V V V V V 0 05 V − V V V V V V V − − − V V V V V V V 0 04 V − V − V V V V V − − − V V V V V V V 0 03 V − V − V V V V V − − − V V V V − V V 1 DAT0 02 V − V − V − V V V − − − V V V V − V V 1 01 V − V − V − V V V − V − V V V V − V V 1 00 V − V − V − V V V − V − V − V V − V − 1 V: valid, −: ignore, bit order: MSB first 30 Feb. 3, 2009; DSH000143_003EN Micronas DATA SHEET HAL82x 5.5.1. Programming Information If the content of any register (except the lock registers) is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM. Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and PROM commands must be zero. ERASE and PROM act on all registers in parallel. Note: To store data in the GP register it is necessary to set bit number 0 of the MODE register to one, before sending an ERASE and PROM command. Otherwise the data stored in the GP register will not be changed. If all HAL82x registers are to be changed, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end. During all communication sequences, the customer has to check if the communication with the sensor was successful. This means that the acknowledge and the parity bits sent by the sensor have to be checked by the customer. If the Micronas programmer board is used, the customer has to check the error flags sent from the programmer board. Note: For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment and programming of HAL82x. The LOCK function is active after the next power-up of the sensor. The success of the Lock Process should be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. Electrostatic Discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. Micronas Feb. 3, 2009; DSH000143_003EN 31 HAL82x 6. Data Sheet History 1. Advance Information: “HAL82x Programmable Linear Hall Effect Sensor”, Sept. 20, 2006, 6251-6921AI. First release of the advance information. 2. Data Sheet: “HAL82x High-Precision Programmable Linear Hall-Effect Sensor Family”, Jan. 9, 2008, DSH000143_001EN. First release of the data sheet. Major changes: – package diagrams updated – ammopack diagrams for TO92UA/UT updated – Section 3.10. Magnetic Characteristics added 3. Data Sheet: “HAL82x High-Precision Programmable Linear Hall-Effect Sensor Family”, March 18, 2008, DSH000143_002EN. Second release of the data sheet. Minor changes: – Section 2.2. Teminology: missing formualr added – Section 2.2. Range: table added – Section 3.10. Magnetic Characteristics added 4. Data Sheet: “HAL82x High-Precision Programmable Linear Hall-Effect Sensor Family”, Feb. 3, 2009, DSH000143_003EN. Third release of the data sheet. Major changes: – Section 1.6. Solderability and Welding updated – Section 2.2. Bit Time updated DATA SHEET Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com 32 Feb. 3, 2009; DSH000143_003EN Micronas