HAL856UT-A

Approval Document Review Document Hardware Hardware Documentation DSH000142_002EN Jan. 12, 2010 Dat i Sn I t P re a n i h a r y o m ation A d vlam c ee en f Dra t a Sheet HAL 856 Programmable Linear Hall-Effect Sensor with Arbitrary Output Characteristic (2-Wire) ® March Edition ??? 23, 2010 DSH000142_002EN 6251-???-?PD AI000???_00?EN HAL856 Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks – HAL DATA SHEET Micronas Patents Sensor programming with VDD-Modulation protected by Micronas Patent No. EP 0 953 848. Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235, and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 Contents Page 5 5 5 6 6 6 6 6 7 7 9 13 13 15 17 17 21 21 21 22 22 22 24 26 27 28 28 29 29 29 30 31 32 32 32 33 34 34 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. 2. 2.1. 2.2. 2.3. 2.3.1. 2.3.2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.5.1. 3.6. 3.6.1. 3.7. 3.8. 3.9. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 4.6.1. 4.6.2. 4.6.3. 4.6.4. Title Introduction Major Applications Features Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability and Welding Pin Connections and Short Descriptions Functional Description General Function Digital Signal Processing and EEPROM Calibration Procedure General Procedure Example: Calibration of an Angle Sensor Specifications Outline Dimensions Dimensions of Sensitive Area Position of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Power Diagram Characteristics Specification of Biphase-M Output Magnetic Characteristics Diagnosis Functions Typical Characteristics Application Notes Measurement of a PWM Output Signal Measurement of a Biphase-M Output Signal Temperature Compensation Ambient Temperature EMC and ESD Start-Up Behavior First Operation (Power-Up) Operation after Reset in Biphase-M Mode with Provide Part Number Option Enabled Power-Down Operation Power Drop Operation Micronas March 23, 2010; DSH000142_002EN 3 HAL856 Contents, continued Page 35 35 35 38 39 39 41 42 Section 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 6. Title Programming of the Sensor Definition of Programming Telegram Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information Data Sheet History DATA SHEET 4 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 peratures from −40 °C up to 150 °C. The HAL856 is available in the very small leaded packages TO92UT-1 and TO92UT-2. Programmable Linear Hall-Effect Sensor with Arbitrary Output Characteristic (2-Wire) Release Note: Revision bars indicate significant changes to the previous edition. 1.1. Major Applications 1. Introduction The HAL856 is a member of the Micronas family of programmable linear Hall sensors. The HAL856 offers an arbitrary output characteristic and a 2-wire output interface. The HAL856 is an universal magnetic field sensor based on the Hall effect. The IC is designed and produced in sub-micron CMOS technology and can be used for angle or distance measurements if combined with a rotating or moving magnet. The major characteristics like magnetic field range, output characteristic, output format, sensitivity, shift (offset), PWM period, low and high output current, and the temperature coefficients are programmable in a non-volatile memory. The output characteristic can be set with 32 setpoints. The HAL856 features a temperature-compensated Hall plate with choppered offset compensation, an A/D-converter, digital signal processing, an EEPROM memory with redundancy and lock function for the calibration data, a serial interface for programming the EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the sensor accuracy. The HAL856 is programmable by means of modulating the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output signal directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. This offers a lowcost alternative for all applications that presently need mechanical adjustment or laser trimming for calibrating the system. In addition, the temperature compensation of the Hall IC can be fitted to all common magnetic materials, by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high accuracy. The calculation of the individual sensor characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. The sensors are designed for automotive or industrial applications. They operate with ambient temDue to the sensor’s versatile programming characteristics, the HAL856 is the optimal system solution for applications such as: – contactless potentiometers, – rotary position measurement (e.g., pedal sensor), – fluid level measurement, – linear position detection, and – magnetic field detection. 1.2. Features – high-precision linear Hall effect sensors with different output formats – various programmable magnetic characteristics with non-volatile memory – programmable output characteristic (32 setpoints with 9-bit resolution) – programmable output formats (PWM or serial Biphase-M) – programmable PWM period – programmable output current source (low and high current) – digital signal processing – temperature characteristics programmable for matching all common magnetic materials – programming by modulation of the supply voltage – lock function and built-in redundancy for EEPROM memory – operates from –40 °C up to 150 °C ambient temperature – operates from 4.5 V up to 18 V supply voltage – operates with static magnetic fields and dynamic magnetic fields up to 2 kHz – choppered offset compensation – overvoltage protection on all pins – reverse-voltage protection on VDD pin – magnetic characteristics extremely robust against mechanical stress – short-circuit-protected output – EMC-optimized design – programmable slew rate for optimized EMI behavior – single-wire interface possible Micronas March 23, 2010; DSH000142_002EN 5 HAL856 1.3. Marking Code The HAL856 has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. 1.6. Solderability and Welding Soldering DATA SHEET During soldering reflow processing and manual reworking, a component body temperature of 260°C should not be exceeded. Type A HAL856 856A Temperature Range K 856K Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = −40 °C to +170 °C K: TJ = −40 °C to +140 °C The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.4. on page 31. 1.7. Pin Connections and Short Descriptions Pin No. 1 2 Pin Name VDD GND DATA OUT Type IN/ OUT Short Description Supply Voltage and Programming Pin Ground Protocol Out 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A and K Package: UT for TO92UT-1/-2 Type: 856 Example: HAL856UT-K → Type: 856 → Package: TO92UT → Temperature Range: TJ = −40°C to +140°C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Micronas Hall Sensors: Ordering Codes, Packaging, Handling”. 3 Note: Pin 3 is only active before locking of the sensor. It can be used for the communication with the sensor before the EEPROM is locked. HAL856 1 VDD 3 DATA 2 GND Fig. 1–1: Pin configuration Note: The third sensor pin should be floating or connected to the GND line after locking the sensor. 6 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 sumption. There is no transmission of the PWM signal during the communication. When no command is detected or processed and the supply voltage is within the recommended operating range the PWM or Biphase-M output is enabled. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant EEPROM cells. In addition, the sensor IC is equipped with devices for overvoltage and reversevoltage protection at all pins. 2. Functional Description 2.1. General Function The HAL856 is a monolithic integrated circuit which provides an output signal proportional to the magnetic flux through the Hall plate. The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers, converted to the different digital output formats (PWM and Biphase-M serial protocol) and provided by an output current source. The function and the parameters for the DSP are explained in Section 2.2. on page 9. The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset. As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2–1). After detecting a command, the sensor reads or writes the memory and answers with a digital modulation of the current con- HAL 856 8 VDD (V) 6 5 VDD GND DATA Fig. 2–1: Programming with VDD modulation VDD Bandgap Reference and Protection Devices Temperature Dependent Bias Oscillator Switched Hall Plate A/D Converter Digital Signal Processing Current Output DATA Supply Level Detection GND Lock Control EEPROM Memory Fig. 2–2: HAL856 block diagram Micronas IDD (A) 7 March 23, 2010; DSH000142_002EN 7 HAL856 DATA SHEET Digital Output Register 14 bit Digital Signal Processing Interpolate between Limits A/D Converter Digital Filter Adder Multiplier Adder Find Interval Get Limits Output Conditioning TC 6 bit TCSQ 5 bit Mode Register Range Filter 3 bit 3 bit Offset Correction Slope 14 bit Shift 10 bit Setpoints 32 x 9 bit Lock 1 bit Micronas Register Customer Settings EEPROM Memory Lock Control Fig. 2–3: Details of EEPROM and digital signal processing 8 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 operating range of the A/D converter is from −30 mT... +30 mT up to −150 mT... +150 mT. During further processing, the digital signal is calculated based on the values of slope, shift, and the defined output characteristic. The result is converted to the different digital output formats (PWM and Biphase-M) and transmitted by a current source output. The DIGITAL OUTPUT value at any given magnetic field depends on the settings of the magnetic field range, the low-pass filter, TC, TCSQ values and the programmed output characteristic. The DIGITAL OUTPUT range is min. 0 to max. 4095. 2.2. Digital Signal Processing and EEPROM The DSP is the major part of this sensor and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2–3 on page 8. Terminology: SLOPE: Slope: name of the register or register value name of the parameter The EEPROM registers consist of three groups: Group 1 contains the registers for the adaption of the sensor to the magnetic system: MODE for selecting the magnetic field range and filter frequency, TC and TCSQ for the temperature characteristics of the magnetic sensitivity. The parameters SLOPE and SHIFT are used for the individual calibration of the sensor in the magnetic cirucit. – The parameter Shift corresponds to the output signal at B = 0 mT. – The parameter Slope defines the magnetic sensitivity. Group 2 contains the registers for defining the output characteristics: OUTPUT FORMAT, OUTPUT PERIOD or OUTPUT BITTIME, SLEW RATE, OUTPUT CHARACTERISTIC, LOW CURRENT and HIGH CURRENT. The shape of the output signal is determined by the output characteristic, which, in turn, is defined by the 32 setpoints of the sensor. A value for each of the setpoints must be defined. The setpoints are distributed evenly along the magnetic field axis allowing linear interpolation between the 32 setpoints (see Fig. 2–4). Group 3 contains the PARTNUMBER, the Micronas registers, and LOCK for the locking of all registers. After locking, the PARTNUMBER register is only available in Biphase-M output mode. The Micronas registers are programmed and locked during production and are read-only for the customer. These registers are used for oscillator frequency trimming and several other special settings. An external magnetic field generates a Hall voltage on the Hall plate. The A/D-converter converts the amplified positive or negative Hall voltage (operates with magnetic north and south poles at the branded side of the package) to a digital value. The digital signal is filtered in the internal low-pass filter and manipulated according to the settings stored in the EEPROM. The digital value after signal processing is readable in the DIGITAL OUTPUT register. Depending on the programmable magnetic range of the Hall IC, the Note: During application design, it should be taken into consideration that DIGITAL OUTPUT should not saturate in the operational range of the specific application. % 100 90 PWM 80 70 60 50 40 30 HAL 856 Logarithmic 20 10 0 0 4 8 12 16 20 Linear Sine 24 28 32 Logarithmic Setpoint Linear Fig. 2–4: Example for different Sine output characteristics Micronas March 23, 2010; DSH000142_002EN 9 HAL856 Mode The MODE register consists of four “sub”-registers defining the magnetic and output behavior of the sensor. The RANGE bits are the three lowest bits of the MODE register; they define the magnetic field range of the A/D converter. The next three bits (FILTER) define the −3 dB frequency of the digital low pass filter. The next sub-register is the FORMAT register, and it defines the different output formats as described below. This sub-register also consists of 3 bits. The last three MSBs define the OUTPUT PERIOD of the PWM signal. Output Format DATA SHEET The HAL856 provides two different output formats: a PWM and Biphase-M output. PMW output is a pulse width modulated output. The signal is defined by the ratio of pulse width to pulse period. The Biphase-M output is a serial protocol. A logical “0” is coded as no output level change within the bit time. A logical “1” is coded as an output level change between 50% and 80% of the bit time. After each bit, an output level change occurs (see Section 3.6.1. on page 26). Table 2–3: OUTPUT FORMAT register definition Range Table 2–1: RANGE register definition Output Format Magnetic Field Range −30 mT...30 mT −40 mT...40 mT −60 mT...60 mT −75 mT...75 mT −80 mT...80 mT −90 mT...90 mT −100 mT...100 mT −150 mT...150 mT Bit Setting PWM 0 Biphase-M 4 Biphase-M (test) 5 1 6 2 7 3 2) 1) Bit Setting 2 41) 52) In case of OUTPUT FORMAT = 4 the continuous Biphase-M output will be active after locking the device. In order to test the Biphase-M output with non-locked sensors OUTPUT FORMAT = 5 has to be used. writing OUTPUT FORMAT = 5 will activate the Biphase-M output for test purpose. The test can be deactivated by switching the device off. It is not possible to communicate with the sensor after activation of test mode. Filter Table 2–2: FILTER register definition −3 dB Frequency 80 Hz 160 Hz 500 Hz 1 kHz 2 kHz Bit Setting 0 1 2 3 4 10 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 TC and TCSQ The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaption is done by programming the TC (Linear Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the output signal characteristic can be fixed over the full temperature range. The sensor can compensate for linear temperature coefficients ranging from about −2100 ppm/K up to 600 ppm/K and quadratic coefficients from about −5 ppm/K2 to 5 ppm/K2. Please refer to Section 4.3. on page 30 for the recommended settings for different linear temperature coefficients. Output Period The OUTPUT PERIOD register defines the PWM period of the output signal. Table 2–4: OUTPUT PERIOD register definition PWM Output Period 128 ms; 12-bit resolution 64 ms; 12-bit resolution 32 ms; 12-bit resolution 16 ms; 12-bit resolution 8 ms; 12-bit resolution 4 ms; 11-bit resolution 2 ms; 10-bit resolution 1 ms; 9-bit resolution Bit Setting 0 1 2 3 4 5 6 7 Slope The SLOPE register contains the parameter for the multiplier in the DSP. The Slope is programmable between −4 and 4. The register can be changed in steps of 0.00049. Slope = 1 corresponds to an increase of the output signal by 100% if the digital value at the A/D-converter output increases by 2048. For all calculations, the digital value after the digital signal processing is used. This digital information is readable from the DIGITAL OUTPUT register. Output Bittime The OUTPUT BITTIME register defines the bit time of the Biphase-M output signal. OUTPUT BITTIME is “sub”-register of the SPECIAL CUSTOMER register. Table 2–5: OUTPUT BITTIME register definition Shift Biphase-M Output Bit Time 40 μs 84 µs 168 µs 320 µs 700 µs 1.6 ms 3.2 ms 6.4 ms Bit Setting 0 1 2 3 11 4 5 7 Part Number In case of Biphase-M output, a part number can be defined. This part number will be sent during power-on of the sensor if the PARTNUMBER ENABLE bit is set. Afterwards, the sensor will send the digital value corresponding to the applied magnetic field. – The PARTNUMBER ENABLE bit is part of the SPECIAL CUSTOMER register. – The OUTPUT PERIOD register defines the time interval for which the part number is sent. The SHIFT register contains the parameter for the adder in the DSP. Shift is the output signal without external magnetic field (B = 0 mT) and programmable from −100% up to 100%. For calibration in the system environment, a 2-point adjustment procedure is recommended. The suitable Slope and Shift values for each sensor can be calculated individually by this procedure. Note: Setting the Biphase-M bit time to 40 μs simultaneously switches the programming telegram to the same bit time. Hence after writing the OUTPUT BITTIME register the timing of the programming device has to be set accordingly. Micronas March 23, 2010; DSH000142_002EN 11 HAL856 Output Characteristic The OUTPUT CHARACTERISTIC register defines the shape of the sensor output signal. It consists of 32 setpoints. Each setpoint can be set to values between 0 and 511 LSB. The output characteristic has to be monotonic increasing (Setpoint0 ≤ Setpoint1 ≤ SetpointN). LOCKR By setting this 1-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. This bit is active after the first power-off and power-on sequence after setting the LOCK bit. Slew Rate DATA SHEET The SLEW RATE register is a “sub”-register of the CURRENTSOURCE register. The output signal fall and rise time of the HAL856 depends on the SLEW RATE register setting and the external load circuit. Table 2–7: SLEW RATE register definition Typ. Values (Sensor Only) Rise time [µs/mA] 0.05 0.3 Fall time [µs/mA] 0.1 0.6 1.1 1.6 0 1 2 3 Bit Setting Warning: This register cannot be reset! 0.5 0.8 Digital Output This 12-bit register delivers the actual digital value of the applied magnetic field after the signal processing. This register can only be read out, and it is the basis for the calibration procedure of the sensor in the system environment. Note: The slew rate can be programmed to optimize the EMI behavior of the application. The differential current change has a Gaussian shape for low emission. Please contact Micronas Application Support in case further slew rates are required. Offset Correction The OFFSET CORRECTION register allows to adjust the digital offset of the built-in A/D-converter. The digital offset can be programmed to −3/4, −1/2, −1/4, 0, +1/4, +1/2, +3/4 of full-scale. Table 2–6: OFFSET CORRECTION register definition Offset Correction −3/4 −1/2 −1/4 0 1/4 1/2 3/4 Bit Setting 28 29 30 0 17 18 19 Fig. 2–5: Typical IDD vs. slew rate for setting “slowest slew rate” Note: Using the Offset Correction will change the Micronas trimming of the LSB adjusted offset. 12 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 2.3. Calibration Procedure 2.3.1. General Procedure For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming (Programmer Board Version 5.1) and the corresponding software (PC856) for the input of the register values. For the individual calibration of each sensor in the customer application, a two-point adjustment is recommended (see Fig. 2–6 on page 15 for an example). The calibration shall be done as follows: Current Source The CURRENTSOURCE register contains three “sub”registers: The 3 LSB contain the HIGH CURRENT setting, the next 4 bits the LOW CURRENT setting of the 2-wire output. The two MSB are used for the SLEW RATE register. There are 12 combinations of high and low current levels. Table 2–8: HIGH/LOW CURRENT register definition Typ. Supply Current IDD,Low 6 6 6 6 6 6 7 7 7 7 7 7 IDD,High 13.5 14 14.5 15 15.5 16 13.5 14 14.5 15 15.5 16 Unit mA mA mA mA mA mA mA mA mA mA mA mA 5 4 3 2 1 0 5 4 3 2 1 0 12 12 12 12 12 12 4 4 4 4 4 4 HIGH CURRENT LOW CURRENT Step 1: Input of the registers which need not be adjusted individually The magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, the part number and the output format are given for this application. Therefore, the values of the following registers should be identical for all sensors of the customer application. – FILTER (according to the maximum signal frequency) – RANGE (according to the maximum magnetic field at the sensor position) – TC and TCSQ (depends on the material of the magnet and the other temperature dependencies of the application) – OUTPUT FORMAT (according to the application requirements) – OUTPUT PERIOD (according to the application requirements) – PARTNUMBER (in case Biphase-M output format is used) – LOW CURRENT – HIGH CURRENT – OFFSET CORRECTION – SLEW RATE Write the appropriate settings into the HAL856 registers. Micronas March 23, 2010; DSH000142_002EN 13 HAL856 Step 2: Initialize DSP As the DIGITAL OUTPUT register value depends on the settings of SLOPE, SHIFT and the OUTPUT CHARACTERISTIC, these registers have to be initialized with defined values, first: – ShiftINITIAL = 50% – OUTPUT CHARACTERISTIC = ’Linear Standard’ (Setpoint 0 = 0, Setpoint 1 = 16, Setpoint 2 = 32, ..., Setpoint 31 = 496). – SlopeINITIAL depends on the setting of the digital low-pass filter (see Table 2–9). Table 2–9: Initial slope values −3 dB Frequency 80 160 500 1000 2000 SlopeINITIAL 0.2578 0.2578 0.1938 0.1938 0.3398 Step 4: Calculation of Shift and Slope DATA SHEET Set the system to calibration point 1 and read the register DIGITAL OUTPUT. The result is the value DOUT1. Now, set the system to calibration point 2, read the register DIGITAL OUTPUT, and get the value DOUT2. With these values, the settings for Sensitivity and Shift are calculated as: ( DOUT 2 NOM – DOUT 1 NOM ) Slope = Slope INITIAL × -------------------------------------------------------------------------( DOUT 2 – DOUT 1 ) 100% ( DOUT 2 – 2048 ) × Slope Shift = ------------- × ⎛ DOUT 2 NOM – --------------------------------------------------------------- ⎞ ⎠ 4096 ⎝ Slope INITIAL Write the calculated values for Slope, Shift, and the desired output characteristic into the EEPROM. The sensor is now calibrated for the customer application. As long as the LOCK bit is not set, the calibration procedure can be applied repeatedly. Step 3: Define Calibration Points For highest accuracy of the sensor, calibration points near the minimum and maximum input signal are recommended. Define nominal values DOUT1NOM and DOUT2NOM of the DIGITAL OUTPUT register at the calibration points 1 and 2, respectively. Note: For a recalibration, the calibration procedure has to be started at the beginning (step 1). A new initialization is necessary, as the initial values for SlopeINITIAL, ShiftINITIAL and output characteristic are overwritten in step 4. Step 5: Locking the Sensor The last step is activating the LOCK function with the “LOCK” command. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands. Note: Micronas software PC856 uses default settings DOUT1NOM = 0 and DOUT2NOM = 3968. The output is clamped to Setpoint 0 and Setpoint 31. In the case of “Linear Standard’”, Setpoint 0 corresponds to DIGITAL OUTPUT = 0, while Setpoint 31 corresponds to DIGITAL OUTPUT = 3968. Warning: This register cannot be reset! 14 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 Step 1: Input of the registers which need not be adjusted individually The register values for the following registers are given for all applications: – FILTER Select the filter frequency: 500 Hz – RANGE Select the magnetic field range: 40 mT – TC For this magnetic material: 6 2.3.2. Example: Calibration of an Angle Sensor The following description explains the calibration procedure using an angle sensor with a HAL856 as an example. The required output characteristic is shown in Fig. 2–6. – the angle range is from −25° to 25° – temperature coefficient of the magnet: −500 ppm/K % 100 Output 90 Duty Cycle 80 70 60 50 40 30 20 First Calibration Point HAL 856 Second Calibration Point – TCSQ For this magnetic material: 14 – OUTPUT FORMAT Select the output format: PWM – OUTPUT PERIOD Select the output format: 8 ms – PARTNUMBER For this example: 1 – LOW CURRENT For this example: 6 mA – HIGH CURRENT For this example: 14 mA Linear Sine – OFFSET CORRECTION For this example: none – SLEW RATE For this example: 0 (fastest) 10 -30 -20 -10 0 10 20 Angle 30 ° Enter these values in the software, and use the “write and store” command for permanently writing the values in the registers. Fig. 2–6: Example for output characteristics 0 Sine Step 2: Initialize DSP – SHIFT Select Shift: 50% – SLOPE Select Slope: 0.1938 (see Table 2–9 on page 14) – OUTPUT CHARACTERISTIC Select output characteristic: ’Linear Standard’ Linear Step 3: Define Calibration Points The Micronas software PC856 uses default settings DOUT1NOM = 0 and DOUT2NOM = 3968. DOUT1NOM corresponds to the angle position −25°, DOUT2NOM to +25°. Micronas March 23, 2010; DSH000142_002EN 15 HAL856 Step 4: Calculation of Shift and Slope There are two ways to calculate the values for Shift and Slope. Manual Calculation: 1. Set the system to calibration point 1 (angle 1 = 25°) 2. read the register DIGITAL OUTPUT. For our example, the result is DIGITAL OUTPUT = DOUT1 = 3291. 3. Set the system to calibration point 2 (angle 2 = −25°) 4. read the register DIGITAL OUTPUT again. For our example, the result is DIGITAL OUTPUT = DOUT2 = 985. With these measurements and the pre-programming of the sensor, the values for Slope and Shift are calculated as: 3968 S lope = ------------------------------- × 0,1938 = – 0.3335 ( 985 – 3291 ) DATA SHEET Software Calibration: Use the menu CALIBRATE from the PC software and enter the values for the registers which are not adjusted individually. Set the system to calibration point 1 (angle 1 = 25°), hit the button “Digital Output1”, set the system to calibration point 2 (angle 2 = −25°), hit the button “Digital Output2”, and hit the button “Calculate”. The software will then calculate the appropriate Shift and Slope. This calculation has to be done individually for each sensor. Now, select an output characteristic from the selection box “Output Characteristics” and then press the button “write and store” for programming the sensor. Step 5: Locking the Sensor The last step is activating the LOCK function with the “LOCK” command. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands. Warning: This register cannot be reset! 100% ( 985 – 2048 ) × ( – 0.3335 ) Shift = ------------- × ⎛ 3968 – ------------------------------------------------------------- ⎞ = 52,22% ⎠ 4096 ⎝ 0,1938 Write the calculated values for Slope and Shift and a linear output characteristic ranging from 10% to 90% output duty cycle into the EEPROM memory. 16 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 3. Specifications 3.1. Outline Dimensions Fig. 3–1: TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread Weight approximately 0.12 g Micronas March 23, 2010; DSH000142_002EN 17 HAL856 DATA SHEET Fig. 3–2: TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g 18 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 Fig. 3–3: TO92UT-2: Dimensions ammopack inline, not spread Micronas March 23, 2010; DSH000142_002EN 19 HAL856 DATA SHEET Fig. 3–4: TO92UT-1: Dimensions ammopack inline, spread 20 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 3.2. Dimensions of Sensitive Area 0.25 mm x 0.25 mm 3.3. Position of Sensitive Areas TO92UT-1/-2 y A4 Bd H1 1.5 mm nominal 0.3 mm nominal 0.3 mm min. 22.0 mm, max. 24.1 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol VDD −IDD IZ DATA TJ NPROG 1) 2) 3) 4) Parameter Supply Voltage Reverse Supply Current Current through Protection Device Communication Pin4) Junction Temperature Range Number of Programming Cycles Pin No. 1 1 1 3 Min. −14.51) − −502) − −40 −40 − Max. 18 502) 502) − 150 1703) 100 Unit V mA mA V °C t < 1 min. as long as TJmax is not exceeded t < 1000h Must be connected to GND or remain floating at the latest after locking of the sensor. Micronas March 23, 2010; DSH000142_002EN 21 HAL856 3.4.1. Storage and Shelf Life DATA SHEET The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol VDD VDD Parameter Supply Voltage Battery Supply Voltage Pin No. 1 1 Min. 4.5 8 6 VDDrt Slowest rise time of VDD to reach VDD,min at the sensor for correct power-up Protection Capacitance 1 − − 4.7 Typ. 5 12 12 − − 4.7 Max. 5.5 18 18 10 1 1000 ms ms nF Unit V V TJ >125°C, RP + RSENSE = 150 Ω TJ 125°C Remarks CP 1,2 3.5.1. Power Diagram Due to the current source interface and the sensor’s power dissipation, it is not possible to use all current level and supply voltage combinations over the full temperature range. Fig. 3–5 to Fig. 3–7 describe the possible ambient temperature, supply voltage, and current level combinations for different thermal resistance values. To enable usage of the sensor at high ambient temperatures, it is necessary to have a very good thermal coupling of the sensors and the module. It is also necessary to select low values for the high current level. Fig. 3–5: Power chart for Rth = 200 k/W (TJmax = 170 °C) 22 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 Fig. 3–6: Power chart for Rthjc = 61 k/W (TJmax = 170 °C) Fig. 3–7: Power chart for Rthjc = 61 k/W (TJmax = 150 °C) Micronas March 23, 2010; DSH000142_002EN 23 HAL856 3.6. Characteristics DATA SHEET at TJ = −40 °C to +170 °C, VDD = 4.5 V to 14 V, after programming and locking of the device, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 5 V. For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the temperature range (Example: For K-Type this table is limited to TJ = −40 °C to +140 °C). All voltages listed are referenced to ground (GND). Symbol IDD,Low Parameter Low Level Sink Current1) Pin No. 1 4.5 5.5 IDD,High High Level Sink Current 1) Min. Typ. Max. Unit Conditions programmable parameter 6 7 8 9 mA mA LOW CURRENT = 12 LOW CURRENT = 4 programmable parameter 1 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 22 − 0 1000 500 250 125 62.5 31 15 7.5 0.04 3.2 65 128 15.0 15.5 16.0 16.5 17.0 17.5 − 12 0.5 1080 540 270 135 68 34 17 8.5 0.05 4 80 150 mA mA mA mA mA mA V bit % Hz Hz Hz Hz Hz Hz Hz Hz ms ms % kHz HIGH CURRENT = 5 HIGH CURRENT = 4 HIGH CURRENT = 3 HIGH CURRENT = 2 HIGH CURRENT = 1 HIGH CURRENT = 0 VDDZ Overvoltage Protection at Supply Resolution 1 2,3 2,3 3 − − −0.5 840 420 210 105 52 26 13 6.5 2) 3) INL fPWM Integral Non-Linearity over Temperature Range PWM Output Frequency over Temperature Range PWM period: 1 ms; 9 bit res. PWM period: 2 ms; 10 bit res. PWM period: 4 ms; 11 bit res. PWM period: 8 ms; 12 bit res. PWM period: 16 ms; 12 bit res. PWM period: 32 ms; 12 bit res. PWM period: 64 ms; 12 bit res. PWM period: 128 ms;12 bit res. Biphase-M bit time: 40 μs Biphase-M bit time: 3.2 ms tp0 Biphase-M Output Bittime over Temperature Range Biphase-M Output Timing for Logical 1 Internal ADC Frequency over Temperature Range 3 0.03 2 tp1 fADC 3 − 50 110 VDD = 4.5 V to 14 V 1) Typical values describe the mean value 2) if the Hall IC is programmed suitably 3) of current consumption over temperature (see Fig. 3–8) if more than 50% of the selected magnetic field range are used and the Hall IC is programmed 24 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 Symbol tr(O) Parameter Response Time of Internal Signal1) Pin No. 3 Min. − − − − − − − Typ. 5 4 2 1 0.1 6 5 3 2 50 Max. 10 8 4 2 0.5 11 9 5 3 75 − − − Unit ms ms ms ms ms ms ms ms ms µs V V kHz Conditions 3 dB filter frequency = 80 Hz 3 dB filter frequency = 160 Hz 3 dB filter frequency = 500 Hz 3 dB filter frequency = 2 kHz td(O) tPOD Delay Time of Internal Signal Power-Up Time (time to reach stabilized internal signal)1) 3 3 dB filter frequency = 80 Hz 3 dB filter frequency = 160 Hz 3 dB filter frequency = 500 Hz 3 dB filter frequency = 2 kHz tLVD VLVD VPOD BW Power-Down Time (time until output is off) Power-Down Voltage Power-On Reset Voltage Small Signal Bandwidth (−3 dB) 1 1 3 − − − 3.5 3.6 2 BAC < 10 mT; 3 dB Filter frequency = 2 kHz TO92UT Packages Thermal Resistance Rthja Rthjc Rthjs 1) Junction to Air Junction to Case Junction to Solder Point − − − − − − − − − 235 61 128 K/W K/W K/W Measured with a 1s0p board Measured with a 1s0p board Measured with a 1s1p board The output signal is updated at the begin of each PWM period or Biphase-M period. The update time depends on the output format settings. Fig. 3–8: Current consumption over temperature for VDD = 5 V, LOW CURRENT = 4 and HIGH CURRENT = 4 Micronas March 23, 2010; DSH000142_002EN 25 HAL856 3.6.1. Specification of Biphase-M Output In case of output format Biphase-M, a continuous data stream is provided. It consists of: – 1 SYNC bit defining the bit time tp0, – 14 data bits (DAT) – 1 parity bit (DP) – a gap (signal quiescent) of 8 x tp0 The complete signal period is T = 24 x tp0. The signal quiescent level and the polarity of the SYNC bit is shown in Fig. 3–9. Data Bits (DAT) Definition of Biphase-M Pulses DATA SHEET A logical “0” is coded as no output level change within the bit time. A logical “1” is coded as an output level change between 50% and 80% of the bit time. After each bit, an output level change occurs. The 12 MSB of the 14 data bits (DAT) contain the digital output reading. Data Parity Bit (DP) This parity bit is “1” if the number of zeros within the 14 data bits is even. The parity bit is “0” if the number of zeros is odd. Type HAL856 SYNC Bit Polarity positive Note: If the part number output is activated, the part number will be transmitted 2 times after power-up (see Fig. 4–5 on page 33). The first Biphase-M protocol, respectively, the first PWM period after power-up, is not valid. HAL856: IDD 8 x tp0 SYNC BIT DAT DP Fig. 3–9: Output format Biphase-M: continuous data stream 26 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 3.7. Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 4.5 V to 14 V, after programming and locking of the device, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 5 V. For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the temperature range (Example: For K-Type this table is limited to TJ = −40 °C to +140 °C). Symbol BOffset ΔBOffset/ΔT Δα NLSB(T) Parameter Magnetic Offset Magnetic Offset Change due to TJ Error of Linear Temperature Coefficient of Magnetic Sensitivity Integral Non-Linearity of Temperature Dependence of Sensitivity Pin No. 3 Min. −1 −15 −400 − − Typ. 0 0 0 1 2 Max. 1 15 400 − − Unit mT μT/K ppm/K % % Conditions B = 0 mT, TJ = 25 °C B = 0 mT TC and TCSQ suitable for the application α < 2000 ppm/K α >= 2000 ppm/K TC and TCSQ suitable for the application −20 0 20 μT Range = 30 mT, Filter = 500 Hz BHysteresis Magnetic Hysteresis Definition of Sensitivity Errors over Temperature A ideal Hall-effect device would not be affected by temperature. Its temperature compensation would allow to compensate for a linear temperature coefficient αIDEAL of a permanent magnet. S IDEAL = 1 + α IDEAL × ( T – T 0 ) Micronas specifies temperature: two sensitivity errors over 1. the error of the linear temperature coefficient α: Δα = α – α IDEAL The temperature dependence of the sensitivity of a real sensor is not ideally linear. Its linear temperature coefficient α is determined by a linear least square fit. S B = S 0 × ( 1 + α × ( T – T 0 ) + res ( T ) ) S0 and α are the fit parameters, res(T) the residual error. 2. the maximum residual error over temperature resulting from the least square fit, i.e., the integral non-linearity of the temperature dependence of sensitivity: NL SB ( T ) = max T res ( T ) Micronas March 23, 2010; DSH000142_002EN 27 HAL856 3.8. Diagnosis Functions DATA SHEET The HAL856 features various diagnosis functions, such as undervoltage detection and open-circuit detection. A description of the sensor’s behavior is shown in the table below (Typical Characteristics for TJ = 25 °C). Parameter Undervoltage Detection Level VDD, UV Open VDD Line Open GND Line Min. 3.0 − − Typ. 3.5 − − Max. 4.0 − − Unit V − − Output Behavior No PWM output signal No PWM output signal No PWM output signal Note: The undervoltage detection is activated only after locking the sensor! 3.9. Typical Characteristics Fig. 3–10: Typical current consumption versus supply voltage 28 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 4.1. Measurement of a PWM Output Signal In case that the PWM output mode is activated, the magnetic field information is coded in the duty cycle of the PWM signal. The duty cycle is defined as the ratio between the high time “s” and the period “d” of the PWM signal (see Fig. 4–3). 4. Application Notes Micronas recommends the following application circuits for HAL856. It is recommended to connect a ceramic 4.7 nF capacitor between ground and the supply voltage. Furthermore it is recommended to place a 30 Ω resistor in the supply voltage line. System side Vbattery = 8 V...18 V VDD Sensor side Note: The PWM signal is updated with the falling edge. Hence, for signal evaluation, the triggerlevel must be the falling edge of the PWM signal. RP = 3 0 Ω 1 2 GND Rsense = 120 Ω CP = 4.7 nF Out d 3 IDD,high s Fig. 4–1: Application circuit HAL856 IDD,low Update Fig. 4–3: Definition of PWM signal time To use the HAL856 over the full temperature and supply voltage range and with all available high current levels, Micronas recommends using a current mirror or special interface devices. Fig. 4–2 shows an example using a current mirror. 4.2. Measurement of a Biphase-M Output Signal In order to read the Biphase-M signal Micronas suggests to use a port interrupt which is configured to generate interrupts with both the falling and rising edge of the incoming signal. With each interrupt a timer shall be read out. The first two edges (SYNC bit) define the bit time tp0. Comparing subsequent timer readouts with tp0 successively decodes the Biphase-M pattern. V 1 DD HAL856 3 4.7 nF 2 VRef R R µC T1 T2 Fig. 4–2: Application circuit with current mirror A special interface device could be, for example, the MAXIM MAX9921 (Dual, 2-Wire Hall-Effect Sensor Interface with Diagnostics) chip. With these interface ICs, together with HAL856, a single-wire interface is possible. Note: The third sensor pin should be floating or connected to the GND line. Micronas March 23, 2010; DSH000142_002EN 29 HAL856 4.3. Temperature Compensation The relationship between the temperature coefficient of the magnet and the corresponding TC and TCSQ codes for linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table. Micronas also offers a software named TC-Calc to optimize the TC and TCSQ values for each individual application based on customer measurement results. Please contact Micronas for more detailed information. Table 4–1: Temperature compensation Typ. Temperature Coefficient of Magnet (ppm/K) 600 570 540 520 490 470 440 420 360 330 300 280 260 240 200 180 150 130 60 40 10 −20 −50 −70 TC TCSQ DATA SHEET Table 4–1: Temperature compensation, continued Typ. Temperature Coefficient of Magnet (ppm/K) −100 −180 −200 −230 −260 −280 −360 −390 −410 TC TCSQ 7 6 5 4 3 2 1 0 −31 −30 −29 −28 −27 −26 −25 −24 −23 −22 −21 −20 −19 −18 −17 −16 −15 −14 −13 −12 −11 −10 −9 −8 −7 3 3 3 3 3 4 4 4 4 5 5 5 6 6 6 7 7 8 8 9 9 9 10 11 11 12 12 13 14 14 15 16 17 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 −490 −510 −540 −610 −640 −670 −740 −780 −840 −880 −950 −980 −1010 −1080 −1150 −1180 −1270 −1290 −1360 −1430 −1460 −1540 −1600 −1670 30 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 4.4. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = T A + ΔT Table 4–1: Temperature compensation, continued Typ. Temperature Coefficient of Magnet (ppm/K) −1740 −1810 −1880 −1950 −2020 −2100 TC TCSQ −6 −5 −4 −3 −2 −1 18 19 20 21 22 23 At static conditions and continuous operation, the following equation applies: ΔT = IDD ,mean × VDD × R thjx For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD,mean and Rth, and the max. value for VDD from the application. Example with typical given values: IDD,mean = 0.011 A (IDD,high = 15 mA, IDD,low = 7 mA, duty-cycle = 50%) VDD = 10 V Rthjc = 61 K/W Tjmax = 170 ΔT is calculated as follows: K Δ T = 0,011 A × 10 V × 61 ---- = 6,71 W The maximum ambient temperature TAmax can be calculated as: T Amax = T Jmax – ΔT Micronas March 23, 2010; DSH000142_002EN 31 HAL856 4.5. EMC and ESD For applications with disturbances by capacitive or inductive coupling on the supply line or radiated disturbances, the application circuits shown in Fig. 4–1 on page 29 are recommended. Applications with this arrangement should pass the EMC tests according to the product standards ISO 7637 part 1 to part 3. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. DATA SHEET 4.6. Start-Up Behavior 4.6.1. First Operation (Power-Up) VDD First PWM/BiPhase-M signal starts 5V 3V VDD,UVmin. tPOD time IOUT (2-wire mode) BiPhase-M format Output undefined PWM format Output undefined The first period contains no valid data No valid signal Valid signal Fig. 4–4: Power-up diagram Note: The first PWM-period, respectively the first Biphase-M protocol, is not valid. 32 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 4.6.2. Operation after Reset in Biphase-M Mode with Provide Part Number Option Enabled VDD First signal starts 5V OUTPUT time tPOD Part number max. 100 ms DATA No valid signal Valid signal Fig. 4–5: Biphase-M after reset Note: The part number is transmitted twice. The transmission time depends on the chosen bit time, but is a maximum 100 ms. Micronas March 23, 2010; DSH000142_002EN 33 HAL856 4.6.3. Power-Down Operation DATA SHEET VDD Last PWM/BiPhase-M signal ends 5V VDD,UV IOUT (2-wire mode) BiPhase-M format tLVD time Output undefined Output undefined PWM format Valid signal No valid signal Fig. 4–6: Power-down operation 4.6.4. Power Drop Operation VDD PWM/BiPhase-M signal stops 5V Low voltage on New PWM/BiPhase-M signal starts VDD 5V Power-on reset tLVD IOUT (2-wire mode) BiPhase-M format tPOD time The first period contains no valid data Output undefined Output undefined The first period contains no valid data PWM format Valid signal No valid signal Valid signal Fig. 4–7: Power-drop operation 34 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 mand have to be sent to the sensor. After the recognition of the erase and program commands, the HAL856 answers with an acknowledge pulse on its output signal. After the acknowledge pulse, a pulse on the VDD-line is created to start the charging of the EEPROM cells. Then, the supply voltage is kept constant during the charging time. To stop the charging, a further command is sent to the HAL856. This stopping command can be a further programming command or a read command (see Fig. 5–4 on page 37). – Lock a sensor To lock the EEPROM registers, the lock bit has to be programmed. Write the lock bit into the lock register. If the telegram is valid and the command has been processed, the sensor answers with an Acknowledge Bit (logical 0) on the output. In order to store the lock bit permanently, an erase and program command have to be sent to the sensor. The same procedure as mentioned above (Programming the EEPROM cells Fig. 5–4 on page 37) is used. The EEPROM registers are locked after a power on reset. 5. Programming of the Sensor 5.1. Definition of Programming Telegram The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a serial telegram on the output pin. The bits in the serial telegram have a different bit time for the VDD-line and the sensors answer. The bit time for the VDD-line is defined through the length of the Sync Bit at the beginning of each telegram. The bit time for the sensors answer is defined through the Acknowledge Bit. A logical “0” is coded as no output level change within the bit time. A logical “1” is coded as an output level change between 50% and 80% of the bit time. After each bit, an output level change occurs. 5.2. Definition of the Telegram Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). There are 4 kinds of telegrams: – Write a register (see Fig. 5–2 on page 36) After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the command has been processed, the sensor answers with an Acknowledge Bit (logical 0) on the output. Note: It is mandatory to lock the sensor before performing any kind of reliability tests or after the last programming of the sensor. The HAL856 has its full performance only after setting the LOCK bit. tr high-level tp0 tf tp0 Note: The sensor can only be programmed with programmer board version 5.1. If you have an older version, please contact Micronas or your supplier. – Read a register (see Fig. 5–3 on page 36) After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. – Programming the EEPROM cells In order to permanently store the written data into the EEPROM cells, an erase and program com- logical 0 low-level or tp1 high-level logical 1 low-level tp1 tp0 or tp0 Fig. 5–1: Definition of logical 0 and 1 bit Micronas March 23, 2010; DSH000142_002EN 35 HAL856 Table 5–1: Telegram parameters (All voltages are referenced to GND.) Symbol VDDL VDDH tr tf tp0 tpOUT tp1 tPROG VDD,PROG trp tfp tw Parameter Supply Voltage for Low Level during Programming Supply Voltage for High Level during Programming Rise Time Fall Time Bit Time on VDD Bit Time on Output Pin Voltage Change for Logical 1 Programming Time for EEPROM Supply Voltage during Programming Rise Time of Charging Pulse Fall Time of Charging Pulse Delay Time of Charging Pulse after Acknowledge Pin No. 1 1 1 1 1 3 1, 3 1 1 1 1 1 Min. 5 6.8 − − 1.7 2 50 95 4.9 0.2 0 0.5 Typ. 5.5 8.0 − − 1.75 3 65 100 5 0.5 − 0.7 Max. 6 8.5 0.05 0.05 1.8 4 80 105 5.1 1 1 1 Unit V V ms ms ms ms % ms V ms ms ms Conditions DATA SHEET tp0 is defined through the Sync Bit tpOUT is defined through the Acknowledge Bit % of tp0 or tpOUT WRITE Sync VDD IDD COM CP ADR AP DAT DP Fig. 5–2: Telegram for coding a Write command READ Sync VDD Acknowledge IDD DAT DP COM CP ADR AP Fig. 5–3: Telegram for coding a Read command 36 March 23, 2010; DSH000142_002EN Micronas Micronas March 23, 2010; DSH000142_002EN DATA SHEET STORE SEQUENCE Sync VDD COM1 ERASE CP1 ADR1 AP1 Sync COM2 PROM CP2 ADR2 AP2 Sync COM3 READ CP3 ADR3 AP3 Acknowledge IDD A Start the Charge Pump Stop the Charge Pump Acknowledge DAT DP Detail A VDD IDD 2 x Delay Time Programming Time = 100 ms Fig. 5–4: Telegram for programming the EEPROM HAL856 37 HAL856 5.3. Telegram Codes Sync Bit Each telegram starts with the Sync Bit. This logical “0” pulse defines the exact timing for tp0. Command Bits (COM) The Command code contains 3 bits and is a binary number. Table 5–2 shows the available commands and the corresponding codes for the HAL856. Data Bits (DAT) DATA SHEET The 14 Data Bits contain the register information. The registers use different number formats for the Data Bits. These formats are explained in Section 5.4. on page 39 In the Write command, the last bits are valid. If, for example, the TC register (7 bits) is written, only the last 7 bits are valid. In the Read command, the first bits are valid. If, for example, the TC register (7 bits) is read, only the first 6 bits are valid. Command Parity Bit (CP) This parity bit is “1” if the number of zeros within the 3 Command Bits is odd. The parity bit is “0”, if the number of zeros is even. Data Parity Bit (DP) This parity bit is “1” if the number of zeros within the binary number is even. The parity bit is “0” if the number of zeros is odd. Address Bits (ADR) The Address code contains 4 bits and is a binary number. (see Table 5–3 on page 40) shows the available addresses for the HAL856 registers. Acknowledge After each telegram, the output answers with the Acknowledge signal. This logical “0” pulse defines the exact timing for tpOUT. Address Parity Bit (AP) This parity bit is “1” if the number of zeros within the 4 Address bits is odd. The parity bit is “0” if the number of zeroes is even. Table 5–2: Available commands Command READ READL READH WRITE WRITEL WRITEH PROM ERASE Code 0 6 7 3 1 2 4 5 Explanation read a Setup EEPROM register (like TC, TCSQ, magnetic range, etc.) read a Characteristics EEPROM register (setpoints 0 to 15) read a Characteristics EEPROM register (setpoints 16 to 31) write a Setup EEPROM register (like TC, TCSQ, Magnetic range, etc.) write a Characteristics EEPROM register (setpoints 0 to 15) write a Characteristics EEPROM register (setpoints 16 to 31) program all non-volatile registers erase all non-volatile registers Please note: The LOCK bit is set by using the WRITE command followed by a PROM. 38 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 SHIFT – The register range is from −1024 up to 1023. – The register value is calculated by: 5.4. Number Formats Binary number: The most significant bit is given as first, the least significant bit as last digit. Example: 101001 represents 41 decimal. Shift SHIFT =  × 1024 100% Signed binary number: The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example: SLOPE – The register range is from −8192 up to 8191. – The register value is calculated by: 0101001 represents +41 decimal 1101001 represents −41 decimal TC and TCSQ Two’s-complementary number: The first digit of positive numbers is “0”, the rest of the number is a binary number. Negative numbers start with “1”. In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add “1”. Example: – The TC register range is from −31 up to 31. – The TCSQ register range is from 0 up to 31. Note: The word length TC register is 7 bit. The 6 LSBs represent a signed binary number. The MSB has to be ignored. 0101001 represents +41 decimal 1010111 represents −41 decimal MODE – The register range is from 0 up to 16383 and contains the settings for PERIOD, FORMAT, FILTER, and RANGE: 5.5. Register Information CURRENTSOURCE – The register range is from 0 to 1023 and contains the settings for LOW CURRENT, HIGH CURRENT, and SLEW RATE: CURRENTSOURCE = SLEW R ATE × 128 + LOW C URRENT × 8 + HIGH C URR ENT Please refer to the data sheet for the available PERIOD, FORMAT, FILTER, and RANGE values. DIGITAL-READOUT PARTNUMBER – The register range is from 0 up to 2047. – This register is read only. – The register range is from 0 up to 4095. OFFSET CORRECTION – The register range is from 0 to 31 – The MSB is set to activate the offset correction. Micronas March 23, 2010; DSH000142_002EN 39 HAL856 SPECIAL CUSTOMER – The register range is from 0 to 63 and contains the settings for OUTPUT BITTIME and PARTNUMBER ENABLE: SPECIAL C USTOMER = PARTNUMBER E NABLE × 16 + OUTPUT BITTIME DATA SHEET DEACTIVATE This register can only be written. – The register has to be written with 2063 decimal (80F hexadecimal) for the deactivation. – The sensor can be reset with an Activate pulse on the output pin or by switching off and on the supply voltage. Note: When output format PWM is used the default values for the PARTNUMBER ENABLE bit must not be modified: HAL856: PARTNUMBER ENABLE = 0 Table 5–3: Available register addresses for HAL856 Register Currentsource Code 1 Data Bits 10 Format binary Customer read/write/program Remark Used to define output slew rate and output current levels (IDD_HIGH and IDD_LOW) Only with Biphase-M mode Partnumber Shift Slope Mode Lock Digital Readout Offset Correction Specialcust. 2 3 4 5 6 7 8 9 11 11 14 14 1 12 5 6 binary two’s compl. signed binary binary binary binary two’s compl. (4 LSBs) binary read/write/program read/write/program read/write/program read/write/program write/program read read/write/program read/write/program Range, filter, and output format settings Lock bit Digital value after signal processing Compensation of system offsets Special customer register To define Biphase-M bittime and Partnumber Enable TC TCSQ Curve Low Curve High 11 12 0 ... 15 0 ... 15 6 5 9 9 signed binary (6 LSBs) binary binary binary read/write/program read/write/program write/read/program write/read/program Linear temperature coefficient Quadratic temperature coefficient Setpoints 0 to 15 Setpoints 16 to 31 40 March 23, 2010; DSH000142_002EN Micronas DATA SHEET HAL856 5.6. Programming Information If the content of any register is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM. Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command and a read command. The address within the ERASE and PROM commands is not important. ERASE and PROM act on all registers in parallel. If all HAL856 registers are to be changed, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end. During all communication sequences, the customer has to check if the communication with the sensor was successful. This means that the acknowledge and the parity bits sent by the sensor have to be checked by the customer. If the Micronas programmer board is used, the customer has to check the error flags sent from the programmer board. It is recommended to use the programmer board version 5.1. Further information for the programming of the sensor can be found in the application note for the programmer board. Note: For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment and programming of HAL856. The LOCK function is active after the next power-up of the sensor. The success of the LOCK process should be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. Electrostatic Discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. Micronas March 23, 2010; DSH000142_002EN 41 HAL856 6. Data Sheet History 1. Data Sheet: “HAL85x Programmable Linear HallEffect Sensor”, Dec. 5, 2005, 6251-604-1DS. First release of the data sheet. Major changes: – Section 3.6. Characteristics changed – Section 2. Functional Description: new features added – Section 2.3. Calibration Procedure: completely updated 2. Data Sheet: “HAL856 Programmable Linear HallEffect Sensor with Arbitrary Output Characteristic (2-Wire)”, Jan. 27, 2009, DSH000142_001EN. First release of the HAL856 data sheet. Originally created for HW version HACD-4-4. Major changes: – The previous data sheet for HAL85x has been separated into two individual data sheets, one each for HAL855 and for HAL856. This document describes HAL856 only. – Section 1.6. Solderability and Welding updated – Section 2.1. General Function updated – Section 2.2. Digital Signal Processing and EEPROM updated – Section 3.1. Outline Dimensions updated – Section 3.5.1. Power Diagram added – Section 3.6. Characteristics updated – Section 3.9. Typical Characteristics added – Section 4. Application Notes: updated – Section 4.6. Start-Up Behavior added 3. Data Sheet: “HAL856 Programmable Linear HallEffect Sensor with Arbitrary Output Characteristic (2-Wire)”, March 23, 2010, DSH000142_002EN. Second release of the HAL856 data sheet. Major changes: VDD rise time added DATA SHEET Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com 42 March 23, 2010; DSH000142_002EN Micronas