61048-004

61048 SILICON PHOTOTRANSISTOR (TYPE GS4123) Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • • Hermetically sealed High Sensitivity Base lead provided for conventional transistor biasing Wide receiving angle for easy alignment Spectrally Matched to the 62030 Series LED. Applications: • • • • Incremental Encoding Reflective Sensors Position Sensors Level Sensors DESCRIPTION This is a N-P-N Planar Silicon phototransistor in a flat window TO-46 three-lead package featuring a large (0.06” X 0.06”) sensitive area. It is available in a range of sensitivities and is ideal for use wherever system considerations dictate the use of external optics to focus radiation on the sensor. Available custom binned to customer specifications and/or screened to MIL-PRF-19500. ABSOLUTE MAXIMUM RATINGS Storage Temperature..........................................................................................................................................-65°C to +150°C Operating Temperature (See part selection guide for actual operating temperature)...................................... -65°C to +125°C Collector-Emitter Voltage........................................................................................................................................................ 50V Emitter-Collector Voltage.......................................................................................................................................................... 7V Continuous Collector Current ..............................................................................................................................................50mA Power Dissipation (Derate at the rate of 2.5 mW/°C above 25°C) ..................................................................................250mW Lead Soldering Temperature (1/16” from case for 10 seconds)........................................................................................ 240°C Package Dimensions Schematic Diagram 0.210 [5.33] 0.170 [4.32] 0.030 [0.76] MAX 0.019 Ø [0.48] 0.016 Ø[0.41] 0.230Ø [5.84] 0.209Ø [5.31] C 3 LEADS 3 COLLECTOR Ø0.100 [Ø2.54] 0.048 [1.22] 0.028 [0.71] 0.046 [1.17] 0.036 [0.91] 45° 0.195Ø [4.95] 0.178Ø [4.52] 0.500 [12.70] MIN BASE EMITTER 2 1 E B ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 6-4 61048 Light Current IL 5 20 30 50 30 7 8 10 15 20 0.2 SILICON PHOTOTRANSISTOR (GS4123) UNITS mA ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN TYP MAX 20 30 50 -50 TEST CONDITIONS VCE = 5.0V, H = 20 mW/cm2 NOTE 1 Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Light Current Rise Time ID BVCEO BVECO nA V V µs VCE = 5V, H = 0 IC = 100µA IE = 100µA RL = 100Ω, VCC = 5V, IL = 1.0mA tr Saturation Voltage VCE (sat) V degrees IC = 0.4mA, H = 20 mW/cm2 2 θ Angular Response 10 NOTES: 1. Irradiance in mW/cm2 from tungsten source at a color temperature of 2870K. 2. The angle between incidence for peak response and incidence for 50% of peak response. RELATIVE SPECTRAL RESPONSE 100 RELATIVE RE SPONSE [% ] 100 ANGULAR RESPONSE 80 90 RELATIVE RESPONSE [%] Vcc PULSE RESPONSE TEST CIRCUIT AND WAVEFORM 90% 80 70 60 50 40 30 20 10 60 H BASE OPEN DUT 40 10% IL RL OUTPUT tr tf 20 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 -50 -40 -30 -20 -10 0 10 20 30 40 50 WAVELENGTH [um] ANGLE [DEGREES] DARK CURRENT versus TEMPERATURE 10 COLLECTOR EMITTER CHARACTERISTICS 10 SOURCE TEMP - 2870 TUNGSTEN SOURCE TA = 25°C CEO. COLLECTOR DARK CURRENT [uA] 1.0 VCC =30 V M=0 IC COLLECTOR CURRENT [mA] 0 mW H=1 8.0 0.1 6.0 0.01 4.0 H = 50 0.001 I 0.0001 2.0 H = 20 H = 10 0 0.00001 -50 -25 0 25 50 75 100 125 0 5 10 15 20 25 30 35 TA - AMBIENT TEMPERATURE - °C VCE COLLECTOR-EMITTER VOLTAGE [VOLTS] RECOMMENDED OPERATING CONDITIONS: PARAMETER Bias Voltage-Collector/Emitter Irradiance (H) SYMBOL IF H MIN 5 15 MAX 10 25 UNITS mA mW/cm2 SELECTION GUIDE PART NUMBER 61048-001 61048-101 61048-002 61048-102 61048-003 61048-103 61048-004 61048-104 PART DESCRIPTION Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening IL Range 5 to 20mA 5 to 20mA 20 to 30mA 20 to 30mA 30 to 50mA 30 to 50mA +50mA +50mA MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 6-5