61058-104

61058 SILICON PHOTOTRANSISTOR (TYPE GS4021) Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • • Hermetically sealed High sensitivity Base lead provided for conventional transistor biasing Narrow viewing angle Spectrally matched to the 62033 series LED. Applications: • • • • Incremental encoding Reflective sensors Position sensors Level sensors DESCRIPTION The 61058 is an N-P-N Planar Silicon phototransistor in a lensed TO-46 three-lead package. It is available in a range of sensitivities and is ideal for use wherever high response, low dark current leakage, and low saturation characteristics are required. Available custom binned to customer specifications or screened to MIL-PRF-19500. ABSOLUTE MAXIMUM RATINGS Storage Temperature..........................................................................................................................................-65°C to +150°C Operating Temperature (See part selection guide for actual operating temperature) ......................................-65°C to +125°C Collector-Emitter Voltage........................................................................................................................................................ 50V Emitter-Collector Voltage.......................................................................................................................................................... 7V Continuous Collector Current ..............................................................................................................................................50mA Power Dissipation (Derate at the rate of 2.5 mW/°C above 25°C) ..................................................................................250mW Lead Soldering Temperature (1/16” from case for 10 seconds)........................................................................................ 240°C Package Dimensions Schematic Diagram 0.210 [5.33] 0.170 [4.32] 0.030 [0.76] MAX 0.019 Ø [0.48] 0.016 Ø[0.41] 0.230Ø [5.84] 0.209Ø [5.31] 3 LEADS 3 2 COLLECTOR Ø0.100 [Ø2.54] 0.048 [1.22] 0.028 [0.71] 0.046 [1.17] 0.036 [0.91] 45° 0.195Ø [4.95] 0.178Ø [4.52] BASE 0.500 [12.70] MIN EMITTER 1 ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 6 - 14 61058 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. SILICON PHOTOTRANSISTOR (TYPE GS4021) PARAMETER Light Current 61058-X01 61058-X02 61058-X03 61058-X04 61058-XXX 61058-XXX 61058-XXX 61058-X01 61058-X02 61058-X03 61058-X04 61058-XXX SYMBOL IL MIN 1 4 8 15 30 7 TYP MAX 5 9 16 -100 UNITS mA TEST CONDITIONS VCE = 5.0V, H = 5 mW/cm 2 NOTE 1 Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Light Current Rise Time ID BVCEO BVECO nA V V VCE = 10V, H = 0 IC = 100µA IE = 100µA RL = 1KΩ, VCC = 5V, IL = 1.0mA IC = 0.4mA, H = 5 mW/cm2 2 tr VCE (sat) 3.0 4.0 5.0 7.0 0.2 µs Saturation Voltage V degrees Angular Response 61058-XXX 10 θ NOTES: 2 1. Irradiance in mW/cm from a tungsten source at a color temperature of 2870K.. 2. The angle between incidence for peak response and incidence for 50% of peak response. ANGULAR RESPONSE R E L A T IV E R E S P O N S E [% 100 RELATIVE SPECTRAL RESPONSE 100 90 Vcc PULSE RESPONSE TEST CIRCUIT AND WAVEFORM 90% 80 RELATIVE RESPONSE [%] 80 70 60 50 40 30 20 10 60 H DUT 40 10% IL RL OUTPUT tr tf 20 0 -4 0 -3 0 -2 0 -1 0 0 10 20 30 40 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 A N G L E [D E G R E E S ] WAVELENGTH [um] COLLECTOR-EMITTER CHARACTERISTICS IC C O L L E C T O R C U R R E N T [m A ] 10 C O LO R TEM P = 2870 k TUNGSTEN SOURCE 8 .0 2.0 1.8 1.6 NORMALIZED LIGHT CURRENT versus TEMPERATURE Vcc = 5.0 V NOTE 1 RL =100 H =1 0 /c mW m2 6 .0 5 .0 3 .0 I L [NORMALIZED] 15 20 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -100 -75 -50 -25 0 25 50 75 100 125 150 4 .0 2 .0 2 .0 1 .0 0 .5 0 5 10 0 VC E C O L L E C T O R -E M IT T E R V O L T A G E [V O L T S ] TA AMBIENT TEMPERATURE [°C] RECOMMENDED OPERATING CONDITIONS: PARAMETER Bias Voltage-Collector/Emitter Irradiance (H) SYMBOL IF H MIN 5 15 MAX 10 25 UNITS mA mW/cm2 SELECTION GUIDE PART NUMBER 61058-001 61058-101 61058-002 61058-102 61058-003 61058-103 61058-004 61058-104 PART DESCRIPTION Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening IL Range 1 to 5mA 1 to 5mA 4 to 9mA 4 to 9mA 8 to 16mA 8 to 16mA 15+ mA 15+ mA MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@microopac.com 6 - 15