61090-300

61090 SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR (2N2222AUB) Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package Footprint and pin-out matches SOT-23 packaged transistors MIL-PRF-19500 screening available Applications: • • • • Analog Switches Signal Conditioning Small Signal Amplifiers High Density Packaging DESCRIPTION The 61090 is a hermetically sealed ceramic surface mount general purpose switching transistor. This miniature ceramic package is ideal for designs where board space and device weight are important requirements. This device is available custom binned to customer specifications or screened to MIL-PRF-19500. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage ...............................................................................................................................................................75V Collector-Emitter Voltage............................................................................................................................................................50V Emitter-Collector Voltage..............................................................................................................................................................6V Continuous Collector Current ............................................................................................................................................... 800mA Power Dissipation (Derate at the rate of 3.33 mW/°C above 25°C) .................................................................................. 500mW Maximum Junction Temperature..........................................................................................................................................+200°C Operating Temperature (See part selection guide for actual operating temperature) ......................................... -65°C to +200°C Storage Temperature............................................................................................................................................. -65°C to +200°C Lead Soldering Temperature (vapor phase reflow for 30 seconds) .....................................................................................215°C Package Dimensions Schematic Diagram ORIENTATION KEY 0.054 [1.37] 0.046 [1.17] 3 C3 0.036 [0.91] 0.024 [0.61] 3 PLACES 0.105 [2.67] 0.085 [2.16] 2 0.125 [3.18] 0.115 [2.92] 1 E2 B1 0.024 [0.61] 0.016 [0.41] ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 8-8 61090 TA = 25°C unless otherwise specified. SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222AUB) ELECTRICAL CHARACTERISTICS PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current SYMBOL BVCBO BVCEO BVEBO ICBO MIN 75 50 6 MAX UNITS V V V TEST CONDITIONS IC = 10µA, IE = 0 IC = 10mA, IB = 0µA IC = 0, IE = 10µA VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150°C VCE = 50V VEB = 4.0V, IC =0 VCE = 10V, IC = 0.1mA VCE = 10V, IC =1mA VCE = 10V, IC =10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA VCE = 10V, IC = 10mA @ -55°C NOTE 10 10 nA µA Collector-Emitter Cutoff Current Emitter-Base Cutoff Current ICES IEBO hfe1 hfe2 50 75 100 100 30 35 50 10 nA nA - 325 - Forward-Current Transfer Ratio hfe3 hfe4 hfe5 hfe6 300 - 1 1 Collector-Emitter Saturation Voltage VCE (SAT) 0.30 1.0 V V V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA IB = 50mA 1 1 1 1 Base-Emitter Saturation Voltage VBE (SAT) 0.6 1.20 2.0 SMALL-SIGNAL CHARACTERISTICS Small Signal Forward Current Transfer Ratio Small Signal Forward Current Transfer Ratio Open Circuit Output Capacitance Input Capacitance (Output Open Capacitance) Turn-On Time Turn-Off Time NOTES: 1. Pulse width < 300µs, duty cycle < 2.0%. hfe hfe COBO CIBO ton toff 50 2.5 8 25 35 300 pf pf ns ns VCE = 10V, IC = 1mA, f = 1kHz VCE = 20V, IC = 20mA, f = 100kHz VCB = 10V, 100kHz, < f < 1 MHz VEB = 0.5 V, 100kHz, < f < 1 MHz VCC = 30V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA RECOMMENDED OPERATING CONDITIONS: PARAMETER Bias Voltage-Collector/Emitter Collector-Emitter Voltage PART NUMBER 61090-001 61090-002 61090-101 61090-102 61090-300 SYMBOL IC VCE MIN 10 5 MAX 150 20 UNITS mA V SELECTION GUIDE PART DESCRIPTION 2N2222AUB PNP transistor, commercial version 2N2222AUB PNP transistor, JAN level screening 2N2222AUB PNP transistor, JANTX level screening 2N2222AUB PNP transistor, JANTXV level screening 2N2222AUB PNP transistor, JANS level screening MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 8-9