61113-004

GENERAL PURPOSE (NPN) TRANSISTOR SURFACE MOUNT PACKAGE (2N2369AUB) 61113 Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • Hermetically sealed Hermetically sealed 3 pin LCC MIL-PRF-19500 screening available Applications: • • • • Analog Switches Signal Conditioning Small Signal Amplifiers High Density Packaging DESCRIPTION The 61113 is a N-P-N, general-purpose switching and amplifier transistor in a 3 pin leadless chip carrier package. All packages are hermetically sealed for high reliability and harsh environments. This device is available custom binned to customer specifications in commercial or screened to MIL-PRF-19500 up to JANS level. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage - VCBO ................................................................................................................................................. 40Vdc Collector-Emitter Voltage - VCEO .............................................................................................................................................. 15Vdc Collector-Emitter Voltage - VCES .............................................................................................................................................. 40Vdc Emitter-Base Voltage - VEBO ................................................................................................................................................... 4.5Vdc Collector Current – IC(Peak) ....................................................................................................................................................... 500mA Continuous Collector Current ................................................................................................................................................ 200mA Maximum Junction Temperature........................................................................................................................................... +200°C Operating Temperature (See part selection guide for actual operating temperature)............................................ -65°C to +125°C Storage Temperature............................................................................................................................................... -65°C to +200°C Lead Soldering Temperature (vapor phase reflow for 30 seconds) .......................................................................................215°C Package Dimensions Schematic Diagram ORIENTATION KEY 0.054[1.37] 0.046 [1.17] 3 3 PLACES 0.036 [0.91] 0.024 [0.61] C3 0.105 [2.67] 0.085 [2.16] 2 0.125 [3.18] 0.115 [2.92] 1 0.024 [0.61] 0.016 [0.41] E 2 B1 ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 8 - 14 61113 SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2369AUB) ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Forward-Current Transfer Ratio SYMBOL BVCBO BVCEO BVCES BVEBO ICBO ICES hfe hfe hfe hfe4 hfe6 MIN 40 40 15 4.5 MAX UNITS Vdc Vdc Vdc Vdc TEST CONDITIONS IC = 10µA, IE = 0 IC = 10µA , IB = 0µA IC = 10mA , IB = 0µA IC = 0, IE = 10µA VCB = 20V, IE = 0 VCB = 20V, IE = 0, TA = 150°C VCE = 20V VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA VCE = 2V, IC = 100mA VCE = 1V, IC = 10mA @ -55ºC VCE = 0.35V, IC = 10mA @ -55ºC IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA @ +125ºC IC = 30mA, IB = 3mA IC = 100mA, IB = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA @ +125ºC IC = 10mA, IB = 1mA @ -55ºC IC = 30mA, IB = 3mA IC = 100mA, IE = 10mA NOTE 0.4 30 0.4 20 20 20 30 0.20 0.30 0.25 0.50 0.7 0.59 0.85 1.02 1.15 1.60 120 µA µA µA V V V V V V V V V 1 Collector-Emitter Saturation Voltage VCE (SAT) VCE (SAT) VCE (SAT) VCE (SAT) 1 1 1 Base-Emitter Saturation Voltage VBE (SAT) VBE (SAT) VBE (SAT) VBE (SAT) 1 SMALL-SIGNAL CHARACTERISTICS Current-Gain – Bandwidth Product Input Capacitance (Output Open Capacitance) Turn-On Time Turn-Off Time NOTES: Pulse width < 300µs, duty cycle < 2.0%. 1. fr CIBO ton toff 500 25 35 300 MHz pF nS nS VCB = 10V, 100kHz, < f < 1 MHz VEB = 0.5 V, 100kHz, < f < 1 MHz VCC = 30V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA SELECTION GUIDE PART NUMBER 61113-001 61113-002 61113-003 61113-004 61113-005 PART DESCRIPTION 2N2369AUB PNP transistor, commercial version 2N2369AUB PNP transistor, JAN level screening 2N2369AUB PNP transistor, JANTX level screening 2N2369AUB PNP transistor, JANTXV level screening 2N2369AUB PNP transistor, JANS level screening NOTE: Also available in dual and quad configurations upon request. Can also be supplied in gull wing surface mount versions. MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 8 - 15