66004

66004 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • High Reliability Rugged package Stability over wide temperature 40kVdc electrical isolation Applications: • • • • Grid current modulator Power Supply Feedback Switching between power supplies Patient station isolation DESCRIPTION In the 66004, high voltage isolation is provided with a GaAlAs light emitting diode and by your choice of outputs, either silicon phototransistor or photodarlington, hermetically sealed in TO-46 packages and mounted in a high reliability, hermetically sealed, ceramic package. Available in commercial (0° to +70°C), extended temperature range (-40° to +85°C) and full Military temperature range (-55° to +125°C). Contact the factory for special custom or multi-channel requirements! ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ....................... 35V Emitter-Collector Voltage........................................................................................................................................................ 7V Continuous Collector Current ............................................................................................................................................ 50mA Continuous Transistor Power Dissipation ..................................................................(see Note 1) .............................. 250mW Input to Output Isolation Voltage ........................................................................................................................................ 40kV Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature ................................................... 100mA Reverse Input Voltage .......................................................................................................................................................... .2V Continuous LED Power Dissipation ..........................................................................(see Note 1) ................................ 250mW Storage Temperature........................................................................................................................................ -65°C to +150°C Operating Free-Air Temperature Range .......................................................................................................... -55°C to +125°C Lead Solder Temperature (1/16” from case for 10 seconds max.) ..................................................................................240°C Notes: 1. Derate linearly to 125°C free-air temperature at the rate of 2.45 mW/°C. Package Dimensions Schematic Diagram C E K A -X 02 B C A N O D E (+ ) C O LLE C T O R (+ ) Ø 0.01 75 [Ø 0.44] BASE Ø 0.01 75 [Ø 0.44] C A T H O D E (-) E M IT T E R (-) 16,00 0 V , B LA C K D O T RED DOT 2 LE A D S 3 LE A D S Ø 0.15 50 [Ø 3.94] (1) A -X 01 (3) (5) (4) (3) Ø 0.31 00 [Ø 7.87] (2) (1) 0.500 M IN [12 .70] 0.500 M IN [12 .70] 0.849 3 [21.57] (2) K B (5) (4) A LL D IM E N S IO N S A R E IN IN C H E S [M ILLIM E TE R S ] N O M IN A L N O TE : B LA C K D O T IN D IC A TE S A N O D E F O R LE D R E D D O T IN D IC A T E S C O LLE C TO R F O R T R A N S IS T O R . MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 7-3 66004 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. 40kV HIGH VOLTAGE ISOLATER PARAMETER Input Diode Static Reverse Current 66004-X01 66004-X02 66004-X01 66004-X02 66004-X01 66004-X02 66004-X01 66004-X02 SYMBOL IR MIN TYP MAX 100 UNITS µA TEST CONDITIONS VR = 2V Input Diode Static Forward Voltage VF 1.15 1.8 V IF = 20mA Reverse Breakdown Voltage BVR 2 10 V IR = 100µA Input Diode Capacitance CIN 25 pF V = 0V, f = 1MHz OUTPUT TRANSISTOR TA = 25°C unless otherwise specified. PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Dark Current SYMBOL V(BR)CEO ICEO MIN 35 TYP MAX UNITS V TEST CONDITIONS IC = 1mA, IB = 0, IF = 0 VCE = 10V, IF = 0mA 75 300 nA nA COUPLED CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER Current Transfer Ratio 66004-X01 66004-X02 Collector-Emitter Saturation Voltage 66004-X01 66004-X02 DC Isolation Voltage 66004-X01 66004-X02 Rise Time 66004-X01 66004-X02 Fall Time 66004-X01 66004-X02 SYMBOL CTR MIN 5 100 TYP MAX UNITS % TEST CONDITIONS VCE = 5V, IF = 10mA VCE(SAT) 0.5 1.2 V IF = 50mA, IC = 1mA VISO 40 40 kV tr 10 20 µs VCC = 5V, IF =16mA, RL=100Ω tf 10 20 µs VCC = 5V, IF =16mA, RL=100Ω RECOMMENDED OPERATING CONDITIONS: PARAMETER Input Current, High Level Supply Voltage Operating Temperature PART # 66004-001 66004-101 66004-011 66004-002 66004-102 66004-012 SYMBOL IFH VCE TA MIN 16 5 -55 MAX 50 10 125 UNITS mA V °C SELECTION GUIDE PART DESCRIPTION Transistor output, military operating range (-55° to +125°C) Transistor output, full mil-temp (-55° to +125°C) with 100% device screening (on discrete components) Transistor output, commercial version Isolator(0° to 70°C) Darlington output, military operating range (-55° to +125°C) Darlington output, full mil-temp (-55° to +125°C) with 100% device screening (on discrete components) Darlington output, commercial version Isolator(0° to 70°C) MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 7-4