66005-101

66005 16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • High Reliability Rugged package Stability over wide temperature +16kV electrical isolation Applications: • • • • Grid current modulator Power Supply Feedback Switching between power supplies Patient station isolation DESCRIPTION In the 66005, high voltage isolation is provided with a GaAlAs light emitting diode and by your choice of outputs, either silicon phototransistor or photodarlington, hermetically sealed in TO-46 packages and mounted in a high reliability, hermetically sealed, ceramic package. Available in commercial (0° to +70°C), extended temperature range (-40° to +85°C) and full Military temperature range (-55° to +125°C). Contact the factory for special custom or multi-channel requirements! ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ...................... 35V Emitter-Collector Voltage...................................................................................................................................................... 7V Continuous Collector Current .......................................................................................................................................... 50mA Continuous Transistor Power Dissipation ..................................................................(see Note 1) ............................. 250mW Input to Output Isolation Voltage .......................................................................................................................................16kV Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature .................................................. 100mA Reverse Input Voltage ......................................................................................................................................................... 2V Continuous LED Power Dissipation ..........................................................................(see Note 1) .............................. 250mW Storage Temperature...................................................................................................................................... -65°C to +150°C Operating Free-Air Temperature Range ........................................................................................................ -55°C to +125°C Lead Solder Temperature (1/16” from case for 10 seconds max.).................................................................................240°C Notes: 1. Derate linearly to 125°C free-air temperature at the rate of 2.45 mW/°C. Package Dimensions Schematic Diagram C E K A -X02 B C ANODE(+) COLLECTOR (+) Ø0.0175 [Ø0.44] BASE Ø0.0175 [Ø0.44] CATHODE(-) EMITTER(-) 16,000 V, BLACK DOT RED DOT 2 LEADS 3 LEADS Ø0.1550 [Ø3.94] (1) A -X01 (3) (5) (4) (3) Ø0.3100 [Ø7.87] (2) (1) 0.500 MIN [12.70] 0.500 MIN [12.70] 0.8493 [21.57] (2) K B (5) (4) ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] NOMINAL NOTE: BLACK DOT INDICATES ANODE FOR LED RED DOT INDICATES COLLECTOR FOR TRANSISTOR. MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 7-5 66005 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. 16kV HIGH VOLTAGE ISOLATER PARAMETER Input Diode Static Reverse Current 66005-X01 66005-X02 66005-X01 66005-X02 66005-X01 66005-X02 66005-X01 66005-X02 SYMBOL IR MIN TYP MAX 100 UNITS µA TEST CONDITIONS VR = 2V Input Diode Static Forward Voltage VF 1.15 1.8 V IF = 20mA Reverse Breakdown Voltage BVR 2 10 V IR = 100µA Input Diode Capacitance CIN 25 pF V = 0V, f = 1MHz OUTPUT TRANSISTOR TA = 25°C unless otherwise specified. PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Dark Current SYMBOL V(BR)CEO ICEO MIN 35 TYP MAX UNITS V TEST CONDITIONS IC = 1mA, IB = 0, IF = 0 VCE = 10V, IF = 0mA 75 300 nA nA COUPLED CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER Current Transfer Ratio 66005-X01 66005-X02 66005-X01 66005-X02 66005-X01 66005-X02 66005-X01 66005-X02 66005-X01 66005-X02 SYMBOL CTR MIN 15 300 TYP MAX UNITS % TEST CONDITIONS VCE = 5V, IF = 10mA Collector-Emitter Saturation Voltage VCE(SAT) 0.5 1.2 16 16 15 25 15 25 V IF = 50mA, IC = 1mA DC Isolation Voltage VISO kV Rise Time tr µs VCC = 5V, IF = 16mA, RL = 100Ω Fall Time tf µs VCC = 5V, IF = 16mA, RL = 100Ω RECOMMENDED OPERATING CONDITIONS: PARAMETER Input Current, High Level Supply Voltage Operating Temperature SYMBOL IFH VCE TA MIN 16 5 -55 MAX 50 10 125 UNITS mA V °C SELECTION GUIDE PART # 66005-001 66005-101 66005-011 66005-002 66005-102 66005-012 PART DESCRIPTION Transistor output, military operating range (-55° to +125°C) Transistor output, full mil-temp (-55° to +125°C) with 100% device screening (on discrete components) Transistor output, commercial version Isolator (0° to 70°C) Darlington output, military operating range (-55° to +125°C) Darlington output, full mil-temp (-55° to +125°C) with 100% device screening (on discrete components) Darlington output, commercial version Isolator (0° to 70°C) MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 7-6