66116-101B

Single Channel Optocoupler 66116 Electrically Similar to 4N47-4N49 Coaxial or Bulkhead Mount packages Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • • • High reliability Base lead provided for conventional transistor biasing Very high gain, high voltage transistor Hermetically sealed for reliability and stability Stability over wide temperature range High voltage electrical isolation Applications: • • • • Line Receivers Switchmode Power Supplies Signal ground isolation Process Control input/output isolation DESCRIPTION Very high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor packaged in a hermetically sealed metal case. These devices can be tested to customer specifications, as well as to MIL-PRF-38534 H&K quality levels. *ABSOLUTE MAXIMUM RATINGS Input to Output Voltage........................................................................................................................................................ ±1kV Collector-Base Voltage ........................................................................................................................................................... 45V Collector-Emitter Voltage (See Note 1) .................................................................................................................................. 40V Emitter-Base Voltage................................................................................................................................................................ 7V Input Diode Reverse Voltage.................................................................................................................................................... 2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 2) ....................................40mA Continuous Collector Current ..............................................................................................................................................50mA Peak Diode Current (See Note 3)............................................................................................................................................. 1A Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 4) ................................300mW Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C Storage Temperature..........................................................................................................................................-65°C to +125°C Lead Temperature (1/16” (1.6mm) from case for 10 seconds).......................................................................................... 240°C * JEDEC registered data Package Dimensions Base Collector Emitter Case Lead Schematic Diagram A C E Case Lead K ANODE CATHODE B Notes: 1. This value applies with the emitter-base diode open-circuited and the input-diode current equal to zero. 2. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C. 3. This value applies for tw≤1us. PRR