66168-105

66168 PROTON RADIATION TOLERANT OPTOCOUPLER (Pin-for-Pin Replacement for 4N49) Mii OPTOELECTRONIC PRODUCTS DIVISION Rev. A 4/25/00 Features: • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package Stability over wide temperature +1000V electrical isolation Applications: • • • • • Eliminate ground loops Level shifting Line receiver Switching power supplies Motor control DESCRIPTION The 66168 is a modified 4N49 (LED) designed to be more tolerant to proton radiation. The 66168 optocoupler is packaged in a hermetically sealed TO-5. This device can be supplied to customer specifications as well as tested in accordance with MIL-PRF-19500/548 (4N49) to JAN, JANTX, JANTXV and JANS levels. ABSOLUTE MAXIMUM RATINGS Input to Output Voltage......................................................................................................................................................... +1kV Emitter-Base Voltage................................................................................................................................................................ 7V Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) .......................... 40V Collector-Base Voltage ........................................................................................................................................................... 45V Reverse Input Voltage ............................................................................................................................................................. 2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................40mA Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) ............................................................................. 1A Continuous Collector Current ..............................................................................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................300mW Storage Temperature..........................................................................................................................................-65°C to +125°C Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C Lead Solder Temperature (10 seconds max.) ................................................................................................................... 240°C Notes: 1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C. 2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C. Package Dimensions Schematic Diagram 6 LEADS 0 .0 1 6 Ø [0 .4 1 ] 0 .0 1 9 Ø [0 .4 8 ] 0 .0 4 0 [1 .0 2 ] M AX. 0 .3 0 5 [7 .7 5 ] 0 .3 3 5 [8 .5 1 ] 0 .5 0 0 [1 2 .7 0 ] M IN . 0 .1 5 5 [3 .9 4 ] 0 .1 8 5 [4 .7 0 ] 5 5A 6 7 2 1 3 C E 3 1 2 0 .0 2 2 Ø [5 .0 8 ] 0 .0 4 5 [1 .1 4 ] 0 .0 2 9 [0 .7 3 ] 45° 0 .0 3 4 [0 .8 6 4 ] 0 .0 2 8 [0 .7 1 1 ] 7K B N O T E : A L L L IN E A R D IM E N S IO N S A R E IN IN C H E S ( M IL L IM E T E R S ) MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 3 - 16 66168 Rev. A 4/25/00 PROTON RADIATION TOLERANT OPTOCOUPLER (Pin-for-Pin Replacement for 4N49) ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER Input Diode Static Reverse Current Input Diode Static Forward Voltage Input Diode Static Forward Voltage Input Diode Static Forward Voltage -55°C +25°C +100°C SYMBOL IR VF VF VF MIN 1.0 0.8 0.7 TYP MAX 100 2.4 UNITS µA V V V TEST CONDITIONS VR = 2V IF = 10mA IF = 10mA IF = 10mA NOTE 1.7 2.0 1.8 OUTPUT TRANSISTOR TA = 25°C unless otherwise specified. PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Off-State Collector Current +100°C SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO IC(OFF) IC(OFF) MIN 45 40 7 TYP MAX UNITS V V V TEST CONDITIONS IC = 100µA, IB = 0, IF = 0 IC = 1mA, IB = 0, IF = 0 IC = 0mA, IE = 100µA, IF = 0 VCE = 20V, IF = 0mA, IB = O VCE = 20V, IF = 0mA, IB = O NOTE 100 100 nA µA COUPLED CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER On State Collector Current On State Collector Current On State Collector Current Collector-Emitter Saturation Voltage Input to Output Internal Resistance Input to Output Capacitance Rise Time-Phototransistor Operation Fall Time-Phototransistor Operation Rise Time-Photodiode Operation Fall Time-Photodiode Operation +100°C -55 C ° SYMBOL IC(ON) IC(ON) IC(ON) VCE(SAT) RIO CIO tr tf tr tf MIN 2.0 0.5 0.7 TYP MAX UNITS mA mA mA TEST CONDITIONS VCE = 5V, IF = 1mA VCE = 0.4V, IF = 2mA VCE = 5V, IF = 2mA IF = 2mA, IC = 2mA, IB = 0 VIN-OUT = 500V f = 1MHz, VIN-OUT = 1kV VCC = 10V, IF = 5mA, RL = 100Ω, IB = 0 VCC = 10V, IF = 5mA, RL = 100Ω, IB = 0 VCC = 10V, IF = 5mA, RL = 100Ω, IE = 0 VCC = 10V, IF = 5mA, RL = 100Ω, IE = 0 NOTE 2 0.3 10 11 V Ω 1 1 2.5 10 10 0.85 0.85 5 25 25 3 3 pF µs µs µs µs NOTES: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. 2. This parameter must be measured using pulse techniques (tW = 100µs duty cycle < 1%). RECOMMENDED OPERATING CONDITIONS: PARAMETER Input Current, Low Level Input Current, High Level Supply Voltage Operating Temperature SYMBOL IFL IFH VCE TA MIN 0 2 5 -55 MAX 90 10 10 100 UNITS µA mA V ° C SELECTION GUIDE PART NUMBER 66168-001 66168-101 66168-103 66168-105 66168-300 PART DESCRIPTION Single Channel Commercial Proton Radiation Tolerant (4N49) Optocoupler (0° to 70°C) Single Channel Proton Radiation Tolerant (4N49) Screened to JAN level Single Channel Proton Radiation Tolerant (4N49) Screened to JANTX level Single Channel Proton Radiation Tolerant (4N49) Screened to JANTXV level Single Channel Proton Radiation Tolerant (4N49) Screened to JANS level MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 3 - 17