66183-105

66183 REVISION C 5/6/02 PROTON RADIATION TOLERANT OPTOCOUPLER (Single Channel, Electrically Similar to 4N49) Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package Stability over wide temperature +1000V electrical isolation Applications: • • • • • Eliminate ground loops Level shifting Line receiver Switching power supplies Motor control DESCRIPTION The 66183 is a single channel device electrically similar to the 4N49. This product has been designed to be more tolerant to proton radiation. The 66183 optocoupler is packaged in a hermetically sealed 6 pin leadless chip carrier (LCC). This device can be supplied to customer specifications as well as tested in accordance with MIL-PRF-19500 to Class S level. ABSOLUTE MAXIMUM RATINGS Input to Output Voltage........................................................................................................................................................... 1kV Emitter-Base Voltage................................................................................................................................................................ 7V Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ......................... 40V Collector-Base Voltage ........................................................................................................................................................... 45V Reverse Input Voltage ............................................................................................................................................................. 2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ................................... 50mA Peak Forward Input Current (Value applies for tw ≤1µs, PRR < 300 pps) ............................................................................. 1A Continuous Collector Current ..............................................................................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)................................ 300mW Storage Temperature......................................................................................................................................... -55°C to +150°C Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C Lead Solder Temperature (10 seconds max.) .................................................................................................................. 240°C Notes: 1. Derate linearly to 100°C free-air temperature at the rate of 0.80 mW/°C above 25°C. 2. Derate linearly to 100°C free-air temperature at the rate of 3 mW/°C above 25°C. Package Dimensions Schematic Diagram 0.253 [6.42] 0.237 [6.01] PIN 1 IDENTIFIER 0.087 [2.22] 0.071 [1.81] 1 C 3 0.178 [4.52] 0.162 [4.11] 0.036 [0.91] 0.020 [0.51] 0.113 [2.87] 0.097 [2.46] 2 1 6 3 4 5 0.055 [1.40] 0.045 [1.14] 0.078 [1.99] 0.062 [1.58] E 6 B 5 4 0.098 [2.49] 0.082 [2.08] ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 5 - 40 66183 REVISION C 5/6/02 PROTON RADIATION TOLERANT OPTOCOUPLER (Electrically similar to 4N49) ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER Input Diode Static Reverse Current Input Diode Static Forward Voltage Input Diode Static Forward Voltage Input Diode Static Forward Voltage -55°C +25 C +100°C ° SYMBOL IR VF VF VF MIN 1.0 0.8 0.8 TYP MAX 100 2.2 UNITS µA V V V TEST CONDITIONS VR = 3V IF = 10mA IF = 10mA IF = 10mA NOTE 1.8 2.0 2.2 OUTPUT TRANSISTOR TA = 25°C unless otherwise specified. PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Off-State Collector Current +100°C SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICEO ICEO MIN 45 40 2 TYP MAX UNITS V V V TEST CONDITIONS IC = 100µA, IB = 0, IF = 0 IC = 1mA, IB = 0, IF = 0 IC = 0mA, IE = 100µA, IF = 0 VCE = 20V, IF = 0mA, IB = 0 VCE = 20V, IF = 0mA, IB = 0 NOTE 100 100 nA µA COUPLED CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER On State Collector Current On State Collector Current On State Collector Current Collector-Emitter Saturation Voltage Input to Output Internal Resistance Input to Output Capacitance Rise Time-Phototransistor Operation Fall Time-Phototransistor Operation NOTES: 1. 2. +100°C -55°C SYMBOL IC(ON) IC(ON) IC(ON) VCE(SAT) RIO CIO tr tf MIN 2.0 2.0 2.8 TYP MAX UNITS mA mA mA TEST CONDITIONS VCE = 5V, IF = 1mA, IB=0 VCE = 5.0V, IF = 2mA, IB=0 VCE = 5V, IF = 2mA, IB=0 IF = 2mA, IC= 2mA VIN-OUT = 1000V f = 1MHz, VIN-OUT = 1000V VCC = 10V, IF = 10mA, RL = 100Ω, IB = 0 VCC = 10V, IF = 10mA, RL = 100Ω, IB = 0 NOTE 0.3 10 11 V Ω 1 1 2.5 10 10 5 25 25 pF µs µs These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. This parameter must be measured using pulse techniques (tW = 100µs duty cycle < 1%). RECOMMENDED OPERATING CONDITIONS: PARAMETER Input Current, Low Level Input Current, High Level Supply Voltage Operating Temperature PART NUMBER 66183-001 66183-101 66183-103 66183-105 SYMBOL IFL IFH VCE TA MIN 0 2 5 -55 MAX 90 10 10 100 UNITS µA mA V ° C SELECTION GUIDE PART DESCRIPTION Single channel proton radiation tolerant optocoupler - commercial Single channel proton radiation tolerant optocoupler – screened to JAN Single channel proton radiation tolerant optocoupler – screened to JANTX Single channel proton radiation tolerant optocoupler – screened to JANTXV MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 5 - 41