66191-103

66191 PROTON RADIATION TOLERANT OPTOCOUPLER (Single Channel, Electrical EQUIVALENT TO 66099) Mii OPTOELECTRONIC PRODUCTS DIVISION REVISION A 7/14/00 Features: • • • • • Current transfer ratio: 150% typical Base lead provided for conventional transistor biasing Low power consumption High radiation immunity 1000 Vdc isolation test voltage Applications: • • • • • Military and Space High Reliability Systems Voltage Level Shifting Isolated Receiver Inputs Communication Systems DESCRIPTION Radiation tests performed on the 66099 optocoupler have shown that the electrical performance of the device after irradiation is an order of magnitude better than the 4N49 optocouplers. The 66191 has the same components and layout in a 6 pin, hermetically sealed leadless chip carrier package. Figures 1 and 2 from the 66099 data sheet illustrate the radiation performance of the device ABSOLUTE MAXIMUM RATINGS (ta = 25°C unless otherwise noted) Storage Temperature..........................................................................................................................................-55°C to +150°C Operating Free-Air Temperature Range.............................................................................................................-55°C to +100°C Lead Solder Temperature (10 seconds max)......................................................................................................................240°C Input to output Isolation Voltage.........(see Note 1)...........................................................................................................+1kVdc * Input Diode Peak Forward Input Current................................................................. .............................................................................. 50mA Reverse Input Voltage...............................................................................................................................................................7V Input Power Dissipation.......................(see Note 2)............................................................................................................80mW *Output Photodetector Continuous Collector Current................... ...........................................................................................................................50mA Collector-Emitter Voltage........................................................................................................................................................ 40V Emitter-Collector Voltage.......................................................................................................................................................... 5V Collector-Base Voltage............................................................................................................................................................40V Power Dissipation...............................(see Note 3)...........................................................................................................300mW Notes: 1. Measured with input diode leads shorted together and output leads shorted together 2. Derate linearly 0.80mW/°C above 25°C. 3. Derate linearly 3.0mW/°C above 25°C. Package Dimensions 0.253 [6.42] 0.237 [6.01] PIN 1 IDENTIFIER Schematic Diagram 0.087 [2.22] 0.071 [1.81] 1 C 3 0.178 [4.52] 0.162 [4.11] 0.036 [0.91] 0.020 [0.51] 0.113 [2.87] 0.097 [2.46] 2 1 6 3 4 5 0.055 [1.40] 0.045 [1.14] 0.078 [1.99] 0.062 [1.58] E 6 B 5 4 0.098 [2.49] 0.082 [2.08] MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 5 - 40 66191 REVISION A 7/14/00 PROTON RADIATION TOLERANT OPTOCOUPLER. SINGLE CHANNEL ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER Input Diode Static Reverse Current Input Diode Static Forward Voltage SYMBOL IR VF MIN .8 TYP 1.8 MAX 100 2 UNITS µA V TEST CONDITIONS VR = 3V IF = 10mA NOTE OUTPUT TRANSISTOR TA = 25°C unless otherwise specified. PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current +100°C SYMBOL V(BR)CBO V(BR)CEO V(BR)ECO ICEO MIN 40 40 5 TYP MAX UNITS V V V TEST CONDITIONS IC = 100µA, IF = 0 IC = 1mA, IB = 0, IF = 0 IE = 100µA, IF = 0 VCE = 20V, NOTE 100 20 nA µA COUPLED CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER Current Transfer Ratio Collector-Emitter Saturation Voltage Input -Output Isolation Current Input to Output Capacitance Rise Time Fall Time NOTES: SYMBOL CTR VCE(SAT) II/o CIO tr tf MIN 100 TYP MAX 0.3 100 UNITS % V nA TEST CONDITIONS VCE = 1V, IF = 10mA IF = 20mA, IC=10mA VIN-OUT = 1000V f = 1MHz, VIN-OUT = 1kV VCC = 10V, IF = 10mA, RL = 100Ω VCC = 10V, IF = 10mA, RL = 100Ω NOTE 1 1 2.5 5 20 20 pF µs µs 1) These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. RECOMMENDED OPERATING CONDITIONS: PARAMETER Input Current, Low Level Input Current, High Level Supply Voltage Operating Temperature PART NUMBER 66191-001 66191-101 66191-103 66191-105 SYMBOL IFL IFH VCE TA MIN 0 10 5 -55 MAX 100 20 20 +100 UNITS µA mA V ° C SELECTION GUIDE PART DESCRIPTION Proton radiation tolerant optocoupler, commercial Proton radiation tolerant optocoupler, -55 to +100°C Temperature range (JAN equivalent) Proton radiation tolerant optocoupler , 100% JANTX screened Proton radiation tolerant optocoupler , 100% JANTXV screened MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 5 - 41