0405SC-1000M

0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to a series of High Power Silicon Carbide Transistors from Microsemi PPG. CASE OUTLINE 55ST FET (Common Gate) ABSOLUTE MAXIMUM RATINGS Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 250V -1V -65 to +150°C +250°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Idss Igss θJC1 CHARACTERISTICS Drain-Source Leakage Current Gate-Source Leakage Current Thermal Resistance TEST CONDITIONS VGS = -20V, VDG= 125V VGS = -20V, VDS = 0V MIN TYP MAX 750 50 0.15 UNITS µA µA ºC/W FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(ave) = 250 mA, Freq = 406, 425, 450 MHz, GPG Pin ηd ψ Po +1dB Vgs Rev F May 2010 Common Gate Power Gain Input Power Drain Efficiency Load Mismatch Power Output – Higher Drive Gate source Voltage Pout = 1000 W, Pulsed Pulse Width = 300us, DF = 10% F = 450 MHz, Pout =1000W F = 406 MHz, Pout = 1000W F = 450 MHz, Pin = 180 W Set for Idq(ave) = 150mA 8 50 8.5 140 155 10:1 dB W % W Volts 1100 3.0 10.0 Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0405SC-1000M Rev F 0405SC-1000M Typical RF Performance Curve gain 12 10 Gain(db) 8 6 4 2 0 10 20 40 82 Pin (W) drain efficiency 60% 55% 50% 45% Drain eff (%) 40% 35% 30% 25% 20% 15% 10% 10 20 40 82 Pin(W) 132 164 181 Pout 0405SC-1000M: Gain & Pout 300us 10% 125V 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 132 164 181 0405SC-1000M: drain efficiency 300us 10% 125V Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. Pout(W) 0405SC-1000M Rev F 0405SC-1000M Test Circuit board Part C1, C9, C13, C24, C25 C2, C16, C19, C22, C23 C3 , C17, C20, C21 C4 C5, C6, C7, C8 C10 C11, C12 C14, C15, C18 PCB L2, L3 L1, L4 0405SC-1000M Test Circuit Component Designations and Values Description Part Description 330pF Chip Capacitor (ATC 100B) Z1 65 x 1463 mils (W x L) 10pF Chip Capacitor (ATC 100B) 33pF Chip Capacitor (ATC 100B) 4.7pF Chip Capacitor (ATC 100B) 20pF Chip Capacitor (ATC 100B) 1000uF 160V Electrolytic Capacitor 1uF Chip Capacitor 18pF Chip Capacitor (ATC 100B) Rogers 4350, εr=3.48, 30mils, 1oz 7 Turns, 18AWG, IDIA 0.2” Ferrite Coil Inductor Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Note: 270 x 450 mils (W x L) 530 x 273 mils (W x L) 530 x 217 mils (W x L) 550 x 420 mils (W x L) 270 x 158 mils (W x L) 270 x 540 mils (W x L) 65 x 1026 mils (W x L) 65 x 311 mils (W x L) 40 x 345 mils (W x L) All Z length dimensions include bends Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0405SC-1000M Rev F 0405SC-1000M Impedance Information Input Matching Network Output Matching Network Frequency (MHz) ZS (Ohms) 0.53 + j0.32 0.39 + j0.72 0.82 + j0.83 ZL (Ohms) 1.14 + j2.32 1.63 + j2.94 1.86 + j2.08 400 425 450 ZS ZL Pout = 1000W min Vdd = 125V, Idq = 150mA (Avg) Pulse format: 300uS, 10% dc CASE OUTLINE 55ST Common Gate 1 = Drain 2 = Gate 3 = Source Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct.