0405SC-2200M

0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to the series of High Power Silicon Carbide Transistors from Microsemi RF IS. CASE OUTLINE 55TW-FET (Common Gate) ABSOLUTE MAXIMUM RATINGS Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 250V -1V -65 to +150°C +250°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Idss Igss θJC1 CHARACTERISTICS Drain-Source Leakage Current Gate-Source Leakage Current Thermal Resistance TEST CONDITIONS VGS = -20V, VDG= 125V VGS = -20V, VDS = 0V MIN TYP MAX 750 50 0.15 UNITS µA µA ºC/W FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(ave) = 120 mA, Freq = 406, 425, 450 MHz, GPG Pin ηd ψ Po +1dB Vgs Common Gate Power Gain Input Power Drain Efficiency Load Mismatch Power Output – Higher Drive Gate source Voltage Pout = 2200 W, Pulsed Pulse Width = 300us, DF = 6% F = 450 MHz, Pout =2200W F = 420 MHz, Pout = 2200W F = 450 MHz, Pin = 490 W Set for Idq(ave) = 120mA 7.0 50 7.5 390 55 2450 3.0 10.0 440 10:1 W Volts dB W % Rev A1 May 2010 Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0405SC-2200M Rev A1 0405SC-2200M Typical RF Performance Curve 0405SC-2200M: Pin vs Pout / Gain 450MHz, 300us 6%, 125V 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 50 100 150 200 Pin (W) 250 300 350 9 8 7 6 5 4 3 2 400 Gain (dB) Pout Gain Pout (W) 0 405SC-2200M: Pout vs Drain Eff 450MHz, 300us 6%, 125V 70% 60% 50% Drain Eff (%) 40% Drain Ef f 30% 20% 10% 0% 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 Pout (W) Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0405SC-2200M Rev A1 0405SC-2200M Test Circuit board Part C1, C8, C9, C20 C2 C3 C4 C5 C6, C7 C10 C11 C12, C13, C14 C15 C16, C17 C18 C19 PCB 0405SC-2200M Test Circuit Component Designations and Values Description Part Description 330pF Chip Capacitor (ATC 100B) L2, L3 7 Turns, 18AWG, IDIA 0.2” 3.9pF Chip Capacitor (ATC 100B) 12pF Chip Capacitor (ATC 100B) 6.8pF Chip Capacitor (ATC 100B) 2.2pF Chip Capacitor (ATC 100B) 33pF Chip Capacitor (ATC 100B) 1000uF 160V Electrolytic Capacitor 1uf Chip Capacitor 24pF Chip Capacitor (ATC 100B) 15pF Chip Capacitor (ATC 100B) 22pF Chip Capacitor (ATC 100B) 10pF Chip Capacitor (ATC 100B) 8.2pF Chip Capacitor (ATC 100B) Rogers 4350, εr=3.48, 30mils, 1oz L1, L4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Ferrite Coil Inductor 65 x 890 mils (W x L) 65 x 720 mils (W x L) 865 x 450 mils (W x L) 1125 x 500 mils (W x L) 1200 x 500 mils (W x L) 290 x 105 mils (W x L) 290 x 835 mils (W x L) 65 x 687 mils (W x L) 65 x 420mils (W x L) Note: All Z length dimensions include bends Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0405SC-2200M Rev A1 0405SC-2200M Impedance Information Input Matching Network Output Matching Network ZS ZL Typical Impedance Values Frequency (MHz) 406 425 450 ZS(Ω) 0.86 – j1.97 0.93 – j1.76 1.05 – j1.51 ZL(Ω) 0.75 – j0.49 0.87 – j0.25 1.11 + j0.04 * VDD = 125V, IDQ = 120mA avg, Pout = 2200W * Pulse Format: 300µs, 6% Long Term Duty Factor . Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0405SC-2200M Rev A1 0405SC-2200M Case Outline 55TW FET Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct.