0912LD20

0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55QT (Common Source) ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (Pd) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS, VDS=0) Temperatures Storage Temperature Operating Case Temperature 60 W 35V 20V -40 to +150°C +100°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL BVdss Idss Igss Vgs(th) Vds(on) gFS θJC1 CHARACTERISTICS Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Thermal Resistance TEST CONDITIONS Vgs = 0V, Id = 1mA Vds = 28V, Vgs= 0V Vgs = 10V, Vds = 0V Vds = 10V, Id = 3mA Vgs = 10V, Id = 250mA Vds = 10V, Id = 125mA MIN 65 50 1 5 0.23 590 0.3 TYP MAX UNITS V µA µA V V mA/V ºC/W 3 FUNCTIONAL CHARACTERISTICS @ 25°C, Vds = 28V, Idq = 80mA GPS Pd ηd ψ NOTES: Common Source Power Gain Pulse Droop Drain Efficiency Load Mismatch Pulse width = 32µs, LTDC=2% F=960/1215 MHz, Pout = 20W F = 960 MHz, Pout = 20W F = 1090 MHz, Pout = 20W 14 40 15 0.5 42 5:1 dB dB % 1. At rated output power and pulse conditions 2. Pulse Format 1: 32µs, 2% Long Term Duty Factor Rev. A - May 2008 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 0912LD20 PW = 32us, DC=2%: Typical Data 0 912LD20 Input/Output (typical) 30.0 0 912LD20 Input/Output (typical) 30.0 Ouput Power (W) Ouput Power (W) 25.0 20.0 15.0 10.0 5.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 25.0 20.0 15.0 10.0 5.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 960MHz 1215MHz 1090MHz 960MHz 1215MHz 1090MHz Input Powe r (W) Input Powe r (W) 0 912LD20 Input Re turn Loss (typical) 0.00 0 912LD20 Efficie ncy (typical) 1090MHz 70.0% Input Return Loss (dB) 960MHz 1215MHz -1.00 -2.00 -3.00 -4.00 -5.00 -6.00 -7.00 -8.00 60.0% Effi. (%) 50.0% 40.0% 30.0% 20.0% -9.00 -10.00 0.0 5.0 10.0 15.0 20.0 25.0 30.0 10.0% 0.0 5.0 10.0 15.0 960MHz 1215MHz 20.0 1090MHz 25.0 30.0 Output Powe r (W) Output Pow e r (W ) Mode-S Pulse Format Typical Data Freq = 1090 MHz (Performance optimized at 1090 MHz) VDD = 28V, Idq = 80mA, Class-AB Bias Mode-S Pulse Burst: 0.5uS ON/0.5 uS OFF, 128 pulses, repeated every 3.2 mS (LDTC = 2%) Pulse # 1 64 128 dBm 43.0 42.9 42.9 Pout W 20.0 19.4 19.5 Gp dB 16.90 16.77 16.80 Pin dBm 26.10 26.10 26.10 W 0.41 0.41 0.41 R.L(Input) dB -12.60 Droop (dB) -0.1 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 0912LD20 0912LD20 Test Circuit Layout Part C01, C12, C13, C22 C03, C10, C11 C04, C05 C06, C07 C08, C09 C05 C16 R01, R04 R02, R03 PCB M02 M04 M06 M08 M10 M12 M14 M16 U1 0912LD20 Test Circuit Component Designations and Values Description Part Description 43pF Chip Capacitor (ATC 100A) C18 22uF, 63V Electrolytic Capacitor 3.3pF Chip Capacitor (ATC 100A) 2.4pF Chip Capacitor (ATC 100A) 9.1pF Chip Capacitor (ATC 100A) 7.5pF Chip Capacitor (ATC 100A) 4.7pF Chip Capacitor (ATC 100A) 3.0pF Chip Capacitor (ATC 100A) 15Ω, 1/4W Chip Resistor 200, 1/4W Chip Resistor Rogers 6006, εr=6.15, 25mils, 1oz 36 x 200 mils (W x L) 36 x 387 mils (W x L) 200 x 165 mils (W x L) 420 x 429 mils (W x L) 454 x 18 mils (W x L) 36 x 50 mils (W x L) 110 x 760 mils (W x L) 36 x 183 mils (W x L) ADG419, Analog Device C17 C16 C19, C20 C14, C21 C15 C02, C03, L01 R05 M01 M03 M05 M07 M09 M11 M13 M15 M17 47uF 63V Electrolytic Capacitor 470uF, 63V Electrolytic Capacitor 1uF Chip Capacitor 1000pF Chip Capacitor 1nF Chip Capacitor 0.7pF Chip Capacitor (ATC 100B) 6 Turns, 24 AWG, IDIA 0.092″ 82.5Ω, 1/4W Chip Resistor 36 x 295 mils (W x L) 180 x 90 mils (W x L) 130 x 130 mils (W x L) 700 x 200 mils (W x L) 480 x 415 mils (W x L) 494 x 392 mils (W x L) 494 x 510 mils (W x L) 300 x 150 mils (W x L) 36 x 278 mils (W x L) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 0912LD20 Input Matching Network Output Matching Network ZS ZL Typical Impedance Values Frequency (MHz) 960 1090 1215 ZS(Ω) 1.61 - j0.35 2.26 + j0.40 3.68 + j0.90 ZL(Ω) 6.30 - j0.49 4.98 - j0.82 4.85 + j0.23 * VDS = 28V, IDQ = 80mA, Pout = 20W * Pulse Format: 32µs, 2% Long Term Duty Factor Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 0912LD20 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.