1000MP

1000MP 0.6 Watts, 18 Volts 1150 MHz GENERAL DESCRIPTION The 1000MP is a COMMON EMITTER transistor capable of providing 0.6 Watt of Class A, RF output power to 1150 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55FW ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25°C 5.3 Maximum Voltage and Current 45 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 3.5 Collector Current (Ic) 300 Maximum Temperatures Storage Temperature -40 to +150 Operating Junction Temperature +200 W V V mA °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Pout Pin Pg Ft VSWR CHARACTERISTICS Power Output Power Input Power Gain Transition Frequency Load Mismatch Tolerance TEST CONDITIONS F = 1150 MHz Vcc = 18 Volts MIN 0.6 0.05 10.8 3.7 10:1 TYP MAX UNITS W W dB GHz FUNCTIONAL CHARACTERISTICS @ 25°C Emitter to Base Breakdown BVebo BVcbo Collector to Base Breakdown Ices Collector to Emitter Leakage hFE DC – Current Gain Cob Capacitance 1 Thermal Resistance θjc Note 1: At rated output power Rev A: Updated June 2009 Ie = 1 mA Ic = 1 mA Vce=28V Vce = 5V, Ic = 100 mA Vcb = 28V, f =1 MHz 3.5 40 1 15 2.0 3.0 33 pF °C/W V V mA Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1000MP CASE DRAWING: Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1000MP TEST CIRCUIT: Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.