1002MP_10

1002MP 2 Watts, 35 Volts Pulsed Avionics at 960-1215 MHz GENERAL DESCRIPTION The 1002MP is a COMMON BASE transistor capable of providing 2 Watts of pulsed RF output power in the band 960 to 1215 MHz. This transistor is specifically designed for pulsed Avionics amplifier applications. It utilizes gold metallization and low thermal resistance packaging to provide high reliability and supreme ruggedness. CASE OUTLINE 55FW-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25°C 7 Maximum Voltage and Current 50 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 3.5 Collector Current (Ic) 250 Maximum Temperatures Storage Temperature -40 to +150 Operating Junction Temperature +200 W V V mA °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Pout Pin Pg ηc VSWR CHARACTERISTICS Power Output Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1150 MHz Vcc = 35 Volts Pulse width = 20 µs LTDF = 1% MIN 2.0 8.24 TYP 4 0.3 11 45 10:1 MAX UNITS W W dB % FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces hFE Cob θjc1 Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Capacitance Thermal Resistance Ie = 1 mA Ic = 5 mA Vce = 5V, Ic = 100 mA Vcb=35V, f=1MHz 3.5 50 20 2.2 5.0 25 V V pF °C/W Rev B: August 2010 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1002MP Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1002MP Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.