1015MP

1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems up to 1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55FW ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL POUT PIN PG ηc VSWR CHARACTERISTICS Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance TEST CONDITIONS F= 1150 MHz Vcc = 50 Volts PW = 10 µsec, DF = 1% F = 1150 MHz MIN 15 1.5 10 11 40 10:1 TYP MAX UNITS W W dB % 50 Watts Pk 65 Volts 3.5 Volts 1.0 Amps Pk - 65 to + 150oC + 200oC FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces Hfe Cob θjc1 Emitter to Base Breakdown Ie = 5 mA Collector to Emitter Breakdown Ic = 15mA DC Current Gain Vce = 5V, Ic = 100 mA Output Capacitance Vcb = 50 V, f = 1 MHz Thermal Resistance Note 1: At rated output power and pulse conditions Rev A: Updated June 2009 3.5 65 20 5.0 7.5 3.5 o V V pF C/W Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1015MP CASE DRAWING: Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1015MP TEST CIRCUIT: Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.