0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
10502

10502

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    10502 - 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz - Microsemi Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
10502 数据手册
10502 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width and duty required for MODE-S &TCAS applications. The device has gold thinfilm metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55SM Common Base ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25oC1 Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL POUT PIN PG ηc RL VSWR BVEBO BVCES ICBO hFE 1 1458 Watts 65 Volts 3.5 Volts 40 Amps - 65 to + 200oC + 230oC CHARACTERISTICS Output Power Input Power Power Gain Collector Efficiency Return Loss Load Mismatch Tolerance 1 TEST CONDITIONS F = 1030/1090 MHz VCC = 50 Volts PW = 32 µsec, DF = 2% MIN 500 TYP MAX 70 UNITS W W dB % dB 8.5 40 10 F = 1090 MHz Ie = 15 mA Ic = 60 mA VCB = 36V Ic = 5 A, Vce = 5 V 10:1 3.5 65 25 20 0.12 o θjc Note 1: At rated output power and pulse conditions Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Base Leakage DC - Current Gain Thermal Resistance Volts Volts mA C/W Rev. B: Updated July 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1 0502 SAMPLE DEVICE (Pout vs Pin) 700 600 500 Pout(W) 400 300 200 100 0 0 10 20 30 40 50 Pin(W) 1030MHz 1090MHz 60 70 80 90 100 1 0502 SAMPLE DEVICE (Effic vs Pin) 65.0 60.0 55.0 50.0 Effic(%) 45.0 40.0 35.0 30.0 25.0 20.0 0 10 20 30 40 50 Pin(W) 1030MHz 1090MHz 60 70 80 90 100 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
10502
1. 物料型号: - 型号:10502

2. 器件简介: - 10502是一款高功率共基双极晶体管,设计用于1030/1090 MHz频段的脉冲系统,适用于MODE-S和TCAS应用所需的脉冲宽度和占空比。该器件具有金薄膜金属化和扩散球阻,以确保最高的平均故障时间(MTTF)。晶体管包括输入和输出预匹配,以实现宽带能力。低热阻封装降低了结温,延长了使用寿命。

3. 引脚分配: - STYLE 1: PIN 1= COLLECTOR, PIN 2= BASE, PIN 3= EMITTER - STYLE 2: PIN 1= COLLECTOR, PIN 2= EMITTER, PIN 3= BASE

4. 参数特性: - 最大功率耗散:1458瓦特 - 集电极-发射极电压:65伏特 - 发射极-基极电压:3.5伏特 - 集电极电流:40安培 - 存储温度:-65至+200°C - 工作结温:+230°C

5. 功能详解应用信息: - 输出功率:在1030/1090 MHz频率下,电源电压为50伏特,脉冲宽度为32微秒,占空比为2%时,输出功率为500瓦特。 - 输入功率:70瓦特 - 功率增益:8.5分贝 - 集电极效率:40% - 回波损耗:10分贝 - 负载不匹配容忍度:在1090 MHz频率下为10:1 - 发射极-基极击穿电压:在15毫安电流下为3.5伏特 - 集电极-发射极击穿电压:在60毫安电流下为65伏特 - 集电极-基极漏电流:在36伏特电压下小于25毫安 - 直流电流增益:在5安培集电极电流和5伏特集电极-发射极电压下最小为20 - 热阻:0.12°C/W

6. 封装信息: - 封装型号:55SM - 封装尺寸和公差详细数据以表格形式给出,包括毫米和英寸两种单位。
10502 价格&库存

很抱歉,暂时无法提供与“10502”相匹配的价格&库存,您可以联系我们找货

免费人工找货