10502
500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz
GENERAL DESCRIPTION
The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width and duty required for MODE-S &TCAS applications. The device has gold thinfilm metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE 55SM Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation Device Dissipation @ 25oC1 Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL POUT PIN PG ηc RL VSWR BVEBO BVCES ICBO hFE
1
1458 Watts 65 Volts 3.5 Volts 40 Amps - 65 to + 200oC + 230oC
CHARACTERISTICS Output Power Input Power Power Gain Collector Efficiency Return Loss Load Mismatch Tolerance
1
TEST CONDITIONS F = 1030/1090 MHz VCC = 50 Volts PW = 32 µsec, DF = 2%
MIN 500
TYP
MAX 70
UNITS W W dB % dB
8.5 40 10
F = 1090 MHz Ie = 15 mA Ic = 60 mA VCB = 36V Ic = 5 A, Vce = 5 V
10:1 3.5 65 25 20 0.12
o
θjc Note 1: At rated output power and pulse conditions
Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Base Leakage DC - Current Gain Thermal Resistance
Volts Volts mA C/W
Rev. B: Updated July 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
1 0502 SAMPLE DEVICE (Pout vs Pin)
700 600 500 Pout(W) 400 300 200 100 0 0 10 20 30 40 50 Pin(W) 1030MHz 1090MHz 60 70 80 90 100
1 0502 SAMPLE DEVICE (Effic vs Pin)
65.0 60.0 55.0 50.0 Effic(%) 45.0 40.0 35.0 30.0 25.0 20.0 0 10 20 30 40 50 Pin(W) 1030MHz 1090MHz 60 70 80 90 100
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
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