1090MP
90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE 55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL POUT PIN PG ηc VSWR1 CHARACTERISTICS Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance TEST CONDITIONS F= 1025-1150 MHz Vcc = 50 Volts PW = 10 µsec, DF = 1% F = 1090 MHz MIN 90 14 8.08 8.5 40 20:1 TYP MAX UNITS W W dB % 250 Watts Peak
65 Volts 3.5 Volts 6.5 Amps Peak - 65 to +150 oC + 200oC
FUNCTIONAL CHARACTERISTICS @ 25°C BVebo Emitter to Base Breakdown BVces Collector to Emitter Breakdown Hfe DC Current Gain Cob Output Capacitance Thermal Resistance θjc1 Note 1: At rated pulse conditions Rev B: Dec 2009 Ie = 1 mA Ic = 10mA Vce = 5V, Ic = 500 mA Vcb = 50 V, f = 1 MHz 3.5 65 15 12 0.6
o
V V 120 pF C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
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