1214-110M

1214-110M 110 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 330 µs pulse width, 10% duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55KT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 270 Watts 75 Volts 3.0 Volts 8 Amps - 65 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pg ηc Rl Droop Flatness VSWR1 VSWRs CHARACTERISTICS TEST CONDITIONS Freq = 1200 – 1400 MHz Vcc = 50 Volts Pin = 20 Watts Pulse Width = 330µs Duty Factor = 10% MIN TYP MAX UNITS Power Out Power Gain Collector Efficiency Input Return loss Droop Flatness Load Mismatch Tolerance Load Mismatch - Stability 110 7.4 50 10 170 55 0.5 1.25 3:1 1.5:1 Watts dB % dB dB dB FUNCTIONAL CHARACTERISTICS @ 25°C Bvces Ices θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Thermal Resistance Ic = 100 mA Vce = 50 Volts Rated Pulse Condition 75 10 0.65 Volts mA o C/W MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 2008 - Rev. 1 1214-110M Performance Curves 1214-110M Pin vs. Pout 200 180 160 140 Pout (W) 120 100 80 60 40 20 0 0 5 10 15 Pin (W) 20 25 30 35 10.0 0.0 0 5 10 15 Pin (W) 20 25 30 35 Efficency (%) 1200 MHz 1300 MHz 1400 Mhz 1214-110M Pin vs. Efficency 70.0 60.0 50.0 40.0 30.0 20.0 1200 MHz 1300 MHz 1400 MHz 1214-110M Pin vs. Gain 12.0 10.0 8.0 Gain (dB) 1200 MHz 6.0 4.0 2.0 0.0 0 5 10 15 Pin (W) 20 25 30 35 1300 MHz 1400 MHz Impedance Information Frequencies (MHz) 1200 1300 1400 exclusive of bias circuit Z Source (Ω) 3.36-j3.12 3.5-j2.4 3.81-j1.3 Z Load (Ω) 2 4.97+j0.15 5.33-j2.86 2.88-j3.86 Note 2: Z Load MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 1214-110M Test Circuit MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 1214-110M MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324