1N3295R

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER • Glass Passivated Die • Glass to Metal Header Construction • VRRM to 1000V • 1600 Amps Surge Rating Qualified per MIL-PRF-19500/246 DEVICES LEVELS 1N3289 1N3291 1N3293 1N3294 1N3295 1N3289R 1N3291R 1N3293R 1N3294R 1N3295R JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Peak Repetitive Reverse Voltage 1N3289 1N3291 1N3293 1N3294 1N3295 1N3289R 1N3291R 1N3293R 1N3294R 1N3295R Symbol Value 200 400 600 800 1000 100 1600 0.4 -65°C to 200°C -65°C to 200°C Unit VRWM V Average Forward Current, TC = 134° Peak Surge Forward Current @ tp = 8.3ms, half sinewave, TC = 150°C Thermal Resistance, Junction to Case Operating Case Temperature Range Storage Temperature Range IF IFSM RθJC Tj TSTG A A °C/W °C °C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Forward Voltage IFM = 310A, TC = 25°C * Reverse Current VRM = 200, TC = 25°C VRM = 400, TC = 25°C VRM = 600, TC = 25°C VRM = 800, TC = 25°C VRM = 1000, TC= 25°C Reverse Current VRM = 200, TC = 200°C VRM = 400, TC = 200°C VRM = 600, TC = 200°C VRM = 800, TC = 200°C VRM = 1000, TC = 200°C 1N3289 1N3291 1N3293 1N3294 1N3295 1N3289R 1N3291R 1N3293R 1N3294R 1N3295R 1N3289 1N3291 1N3293 1N3294 1N3295 1N3289R 1N3291R 1N3293R 1N3294R 1N3295R Symbol VFM Min. Max. 1.55 Unit DO-205AA (DO-8) V IRM 10 mA IRM 30 mA * Pulse test: Pulse width 300μsec. Duty cycle 2% Note: T4-LDS-0142 Rev. 1 (091785) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER GRAPHS FIGURE 1 TYPICAL FORWARD CHARACTERISTICS FIGURE 3 FORWARD CURRENT DERATING FIGURE 5 TRANSIENT THERMAL IMPEDANCE FIGURE 2 TYPICAL REVERSE CHARACTERISTICS FIGURE 7 MAXIMUM NONREPETITIVE SURGE CURRENT T4-LDS-0142 Rev. 1 (091785) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER PACKAGE DIMENSIONS NOTES: Symbol Dimensions are in inches. Millimeter equivalents are given for general information only. 3. Complete threads to extend to within 2.5 threads of seating plane. 4. 375-24 UNF-2A. Maximum pitch diameter of plated threads shall be basic pitch diameter (.3479 inch (8.837 mm) reference. 5. A chamfer or undercut on one or both ends of hexagonal portions is optional. 6. Minimum flat. 7. For marking (see 3.5). 8. The body of the device, with the exception of the hexagon and flexible lead extensions, lies within cyclinder defined by CD1 and CH, CD1 not to exceed actual HF. 9. Terminal shape is optional. 10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 1. 2. CD CD1 CH CH1 c FL FW HF HT OAL SD SL UD φt Dimensions Inches Millimeters Min Max Min Max .625 1.000 15.88 25.40 .500 12.70 1.750 44.45 1.140 28.96 .050 .120 1.27 3.05 .300 .450 7.62 11.43 .670 17.02 1.031 1.063 26.19 27.00 .125 .500 3.18 12.70 4.300 5.065 109.22 128.65 .605 .343 .250 .645 .373 .310 15.37 8.71 6.35 16.38 9.47 7.87 Notes 8 6 5 4 4 Physical dimensions T4-LDS-0142 Rev. 1 (091785) Page 3 of 3