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1N4133UR-1

1N4133UR-1

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    1N4133UR-1 - SILICON 400mA LOW NOISE ZENER DIODES - Microsemi Corporation

  • 数据手册
  • 价格&库存
1N4133UR-1 数据手册
• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 500mW @ TEC = +125°C Power Derating: 10mW/ °C above TEC = +125°C Forward Derating @ 200 mA: 1.1 Volts maximum ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. CDI TYPE NUMBER NOMINAL ZENER VOLTAGE VZ @ lZT (Note 1) VOLTS CDLL4099 CDLL4100 CDLL4101 CDLL4102 CDLL4103 CDLL4104 CDLL4105 CDLL4106 CDLL4107 CDLL4108 CDLL4109 CDLL4110 CDLL4111 CDLL4112 CDLL4113 CDLL4114 CDLL4115 CDLL4116 CDLL4117 CDLL4118 CDLL4119 CDLL4120 CDLL4121 CDLL4122 CDLL4123 CDLL4124 CDLL4125 CDLL4126 CDLL4127 CDLL4128 CDLL4129 CDLL4130 CDLL4131 CDLL4132 CDLL4133 CDLL4134 CDLL4135 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 82 87 91 100 ZENER TEST CURRENT lZT MAXIMUM ZENER IMPEDANCE ZZT (Note 2) OHMS 200 200 200 200 200 200 200 200 200 200 100 100 100 100 150 150 150 150 150 150 200 200 200 200 200 250 250 300 300 400 500 700 700 800 1000 1200 1500 MAXIMUM REVERSE LEAKAGE CURRENT lR @ VR MAXIMUM ZENER CURRENT lZM mA 56 51 46 44 42 38 35 32 29 27 25 24 22 21 20 19 17 16 15 14 14 13 12 11 9.8 8.9 8.1 7.5 6.7 6.4 6.1 5.6 5.1 4.6 4.4 4.2 3.8 1N4099UR-1 thru 1N4135UR-1 and CDLL4099 thru CDLL4135 • DOU- µA 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 µA 10 10 1.0 1.0 1.0 1.0 .05 .05 .05 .05 .05 .05 .05 .05 .05 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 VOLTS 5.17 5.70 6.24 6.61 6.92 7.60 8.44 9.12 9.87 10.65 11.40 12.15 12.92 13.67 14.44 15.20 16.72 18.25 19.00 20.46 21.28 22.80 25.08 27.38 29.65 32.65 35.75 38.76 42.60 45.60 47.10 51.68 57.00 62.32 66.12 69.16 76.00 DIM D F G G1 S MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN. FIGURE 1 DESIGN DATA CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 °C/W maximum at L = 0 inch THERMAL IMPEDANCE: (ZOJX): 35 °C/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device. NOTE 1 The CDI type numbers shown above have a Zener voltage tolerance of + 5% of the nominal Zener voltage. Nominal Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C. A "C" suffix denotes a + 2% tolerance and a "D" suffix denotes a + 1% tolerance. Zener impedance is derived by superimposing on lZT, A 60 Hz rms a.c. current equal to 10% of lZT (25 µ A a.c.). NOTE 2 6 L AKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE: http://www.microsemi.com 111 1N4099UR-1 CDLL4099 Pd, Rated Power Dissipation (mW) 500 400 300 200 100 0 0 25 50 thru thru FIGURE 2 1N4135UR-1 CDLL4135 75 100 125 150 175 TEC , End cap temperature (°C) POWER DERATING CURVE 1000 500 400 300 200 ZENER IMPEDANCE ZZT (OHMS) 100 50 40 30 20 28 VOLT 10 5 4 3 2 11 VOLT 6.8 VOLT 1 .1 2 .5 1 2 5 10 OPERATING CURRENT IZT (mA) FIGURE 3 20 50 100 ZENER IMPEDANCE VS. OPERATING CURRENT 112
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